JPH1174755A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPH1174755A
JPH1174755A JP23526797A JP23526797A JPH1174755A JP H1174755 A JPH1174755 A JP H1174755A JP 23526797 A JP23526797 A JP 23526797A JP 23526797 A JP23526797 A JP 23526797A JP H1174755 A JPH1174755 A JP H1174755A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
resin
piezoelectric substrate
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23526797A
Other languages
Japanese (ja)
Inventor
Atsuhiro Iioka
淳弘 飯岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP23526797A priority Critical patent/JPH1174755A/en
Publication of JPH1174755A publication Critical patent/JPH1174755A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To completely prevent intrusion of an insulating resin, etc., into a vibration space of a SAW(surface acoustic wave), to eliminate deterioration of characteristics, to make a surface acoustic wave device thinner, in smaller size and lighter weight. SOLUTION: A piezoelectric substrate 1 bottom of which an exciting electrode 9 to generate the surface acoustic wave is mounted on an insulated substrate 7 with a conductor pattern 4 to be connected with the exciting electrode 9 and the piezoelectric substrate 1 is joined with the insulated substrate 7 with a frame body 6 consisting of photocuring resin. Furthermore, a protective film 11 with high moisture proofness is attached to at least an outer circumferential surface 6a of the frame body 6, the intrusion of the insulated resin into the vibration space in which the exciting electrode 9 is provided is prevented by the surface acoustic wave S1 and the surface acoustic wave device is made thinner and in smaller size.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば自動車電話
及び携帯電話等の移動体無線機器に内蔵される共振器、
及び周波数帯域フィルタに使用される弾性表面波装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resonator built in a mobile radio device such as a mobile phone and a mobile phone.
And a surface acoustic wave device used for a frequency band filter.

【0002】[0002]

【従来の技術】従来の代表的な弾性表面波(Surface Ac
oustic Wave 、以下SAWともいう)装置J1,J2の
概略断面図を図5、6に示す。
2. Description of the Related Art Conventional typical surface acoustic waves (Surface Ac
oustic Wave (hereinafter also referred to as SAW) FIGS. 5 and 6 are schematic sectional views of devices J1 and J2.

【0003】図5において、11は圧電基板、12は入
出力電極のパッド、13はパッケージ表面に形成された
外部の駆動回路,共振回路,接地回路等に接続される電
極パターンのパッド、14はSAW素子用の圧電基板1
1上に形成された櫛歯状電極のIDT(Inter Digital
Transducer)電極、19はパッド12,13を接続する
ワイヤであって、これら部材によりSAW素子が構成さ
れている。また、15〜17はセラミック,樹脂等の絶
縁性材料からなるパッケージ部材、18はセラミック,
金属(コバール、Al、Cu)等からなる蓋体であり、
これら部材によりパッケージが構成され、このパッケー
ジ内にSAW素子が収容されている。
In FIG. 5, reference numeral 11 denotes a piezoelectric substrate, 12 denotes input / output electrode pads, 13 denotes an electrode pattern pad connected to an external drive circuit, resonance circuit, ground circuit, etc. formed on the surface of the package, and 14 denotes a pad. Piezoelectric substrate 1 for SAW element
IDT (Inter Digital) of a comb-shaped electrode formed on
Transducer) electrodes 19 are wires connecting the pads 12 and 13. These members constitute a SAW element. Further, 15 to 17 are package members made of an insulating material such as ceramic or resin, and 18 is a ceramic member.
A lid made of metal (Kovar, Al, Cu) or the like,
A package is constituted by these members, and the SAW element is accommodated in the package.

【0004】このように、従来の弾性表面波装置J1
は、パッケージ部材15〜17で囲まれた領域に圧電基
板11を接着剤により載置固定し、パッド12,13を
Al,Au等のワイヤ19により電気的に接続し、さら
に蓋体18をはんだ,接着剤等によりパッケージ部材1
7の上から接着して気密性を保持していた。
As described above, the conventional surface acoustic wave device J1
Is to mount and fix the piezoelectric substrate 11 in a region surrounded by the package members 15 to 17 with an adhesive, electrically connect the pads 12 and 13 with wires 19 such as Al and Au, and further connect the lid 18 with solder. , Package material 1 with adhesive, etc.
7 was adhered from above to maintain airtightness.

【0005】また図6において、21は圧電基板、22
は入出力電極のパッド、23はパッド22とパッド24
を電気的に接続するバンプ等の接続体、24は基体27
の表面に形成され外部の駆動回路,共振回路,接地回路
等に接続される電極パターンのパッド、25はSAW素
子用の圧電基板上に形成された櫛歯状電極のIDT(In
ter Digital Transducer)電極、26はSAW素子全体
にモールドされた絶縁性材料からなる保護部材である。
In FIG. 6, reference numeral 21 denotes a piezoelectric substrate;
Is an input / output electrode pad, 23 is a pad 22 and a pad 24
A connection body such as a bump for electrically connecting
An electrode pattern pad 25 formed on the surface of the substrate and connected to an external drive circuit, resonance circuit, ground circuit, etc., is a comb-shaped electrode IDT (In
The reference numeral 26 denotes a protective member made of an insulating material molded over the entire SAW element.

【0006】このように、従来の他の弾性表面波装置J
2は、IDT電極25が設けられた機能面が、基体27
の上面に対面させたフェースダウン構成であり、絶縁性
樹脂から成る保護部材26が機能面が存在するSAWの
振動空間にまで入り込んでいた。
As described above, another conventional surface acoustic wave device J
2 is a functional surface on which the IDT electrode 25 is provided
The protection member 26 made of an insulating resin has entered the vibration space of the SAW in which the functional surface exists.

【0007】ここで、図6における接続体23は、A
u,Al等の金属製のワイヤをボールボンディング法に
よりバンプとなるように形成するか、Au,はんだ等か
らなるバンプを蒸着法,印刷法,転写法,無電解メッキ
法又は電解メッキ法等により、パッド22上に形成して
得られる。そして、接続体23を設けた圧電基板21
を、接続体23とパッド24との間で位置合わせし、導
電性接着剤の塗布やはんだのリフロー溶融法により接続
し、基体27上に固定している。
Here, the connecting member 23 in FIG.
A metal wire such as u or Al is formed into a bump by a ball bonding method, or a bump made of Au, solder, or the like is formed by a vapor deposition method, a printing method, a transfer method, an electroless plating method, an electrolytic plating method, or the like. , Formed on the pad 22. Then, the piezoelectric substrate 21 provided with the connection body 23
Are fixed between the connecting body 23 and the pad 24, connected by applying a conductive adhesive or by a solder reflow melting method, and fixed on the base 27.

【0008】また、他の従来例として、図6と同様の構
成で、絶縁性樹脂26が振動空間側に入り込まないよう
に、圧電基板21又は基体27の接続体23の振動空間
側に、ダムを設けたものが提案されている(他の従来例
:例えば、特開平5−55303号公報を参照)。
As another conventional example, a damper is provided on the piezoelectric substrate 21 or the connecting body 23 of the base 27 on the vibration space side so as to prevent the insulating resin 26 from entering the vibration space side with the same structure as that of FIG. (Other conventional examples: see, for example, JP-A-5-55303).

【0009】また、他の従来例として、図5のパッケー
ジ17の内部に、SAW素子をフェースダウンでフリッ
プチップ実装し、SAW素子の外周部を絶縁性樹脂で固
定配置して、絶縁性樹脂が振動空間に入り込まないよう
にしたものも提案されている(他の従来例:例えば、
特開平5−291864号公報を参照)。
As another conventional example, a SAW element is flip-chip mounted face down in a package 17 shown in FIG. 5, and the outer periphery of the SAW element is fixedly arranged with an insulating resin. There are also proposals that do not enter the vibration space (other conventional examples: for example,
See JP-A-5-291864).

【0010】さらに、他の従来例として、図5のパッケ
ージ17の内部にSAW素子をフェースダウンでフリッ
プチップ実装し、SAW素子の裏面を絶縁性樹脂で蓋体
18に接着固定することにより、絶縁性樹脂が振動空間
に入り込まないようにしたものも提案されている(他の
従来例:例えば、特開平6−61778号公報を参
照)。
Further, as another conventional example, the SAW element is flip-chip mounted face-down inside the package 17 shown in FIG. 5, and the back surface of the SAW element is bonded and fixed to the lid 18 with an insulating resin. There has also been proposed a resin in which the conductive resin is prevented from entering the vibration space (another conventional example: see, for example, JP-A-6-61778).

【0011】[0011]

【発明が解決しようとする課題】しかしながら、図5の
従来例では、ワイヤ19を使用しているため、ワイヤ1
9が存在する横方向と高さ方向の距離だけ弾性表面波装
置全体の体積が大きくなり、小型軽量化,薄型化に不利
である。
However, since the wire 19 is used in the conventional example shown in FIG.
The volume of the entire surface acoustic wave device is increased by the distance between the horizontal direction and the height direction in which 9 exists, which is disadvantageous in reducing the size, weight, and thickness.

【0012】また、ワイヤボンディング装置によりワイ
ヤを1本ずつ接続しているので、製造工程が煩雑とな
る。
Further, since the wires are connected one by one by the wire bonding apparatus, the manufacturing process becomes complicated.

【0013】さらに、ワイヤ19の存在により、不要な
インダクタンス成分を付加することになり、SAW装置
の周波数特性が変化し、設計上それを考慮しなければな
らない。
Further, unnecessary inductance components are added due to the presence of the wires 19, and the frequency characteristics of the SAW device change, which must be taken into account in the design.

【0014】また、図6の従来例では、絶縁性樹脂26
が振動空間に入り込み、機能面に接しているため、SA
Wの伝搬を阻害しており、弾性表面波装置としての所望
の特性を得るのが困難である。
In the conventional example shown in FIG.
Enters the vibration space and is in contact with the functional surface.
Since the propagation of W is obstructed, it is difficult to obtain desired characteristics as a surface acoustic wave device.

【0015】また、他の従来例のように、絶縁性樹脂
26が振動空間に入り込まないように、ダム材を設けた
り、SAW伝搬路を囲むように機能面に環状部材を設け
たとしても、絶縁性樹脂26の入り込みを完全に阻止す
るには不十分であった。また、このような環状部材を設
ける場合には、環状部材がシリコーン樹脂等の塗布によ
り形成されるため、環状部材を予めチップ側に形成して
おくので、その形成時に高さを均一に形成することが困
難であった。
Further, as in other conventional examples, even if a dam member is provided so that the insulating resin 26 does not enter the vibration space, or if an annular member is provided on the functional surface so as to surround the SAW propagation path, It was insufficient to completely prevent the insulating resin 26 from entering. When such an annular member is provided, since the annular member is formed by applying a silicone resin or the like, the annular member is formed on the chip side in advance, so that the height is uniformly formed during the formation. It was difficult.

【0016】また、他の従来例のように、絶縁基板に
圧電基板をフェースダウンでフリップチップ実装し、圧
電基板の周辺部をシリコン系絶縁性樹脂で気密封止する
弾性表面波装置の場合、絶縁性樹脂のゲル化が熱硬化に
よるものであるため、振動空間内に充満させる不活性ガ
ス又は空気層が熱膨張を起こし、絶縁性樹脂にボイドが
発生するなどして、耐環境性、特に耐湿性に問題があっ
た。また、絶縁性樹脂の塗布部がSAW素子の外周部の
みでバンプ接続体を含まない構造を有する弾性表面波装
置の場合、絶縁基板と圧電材料の応力緩和が不十分であ
り、バンプ接合において長期信頼性に問題があった。
Further, as in another conventional example, in the case of a surface acoustic wave device in which a piezoelectric substrate is flip-chip mounted face down on an insulating substrate and the peripheral portion of the piezoelectric substrate is hermetically sealed with a silicon-based insulating resin, Because the gelation of the insulating resin is due to thermal curing, the inert gas or air layer filling the vibration space causes thermal expansion, and voids are generated in the insulating resin, and the environment resistance, especially There was a problem with moisture resistance. Also, in the case of a surface acoustic wave device having a structure in which the applied portion of the insulating resin is only the outer peripheral portion of the SAW element and does not include the bump connector, the stress relaxation between the insulating substrate and the piezoelectric material is insufficient, and a long time is required for bump bonding. There was a problem with reliability.

【0017】さらに、他の従来例のように、バンプと
パッケージ端子とが当接し、封止部材とパッケージ基板
とで形成される空間が封止されるように、封止部材をパ
ッケージ基板に取り付けた弾性表面波装置の場合、蓋体
により封止する構造であるため、蓋体の高さの確保が必
要となり、弾性表面波装置の薄型化において不利な構造
となる。
Further, as in another conventional example, the sealing member is attached to the package substrate so that the bump and the package terminal are in contact with each other and the space formed by the sealing member and the package substrate is sealed. In the case of a surface acoustic wave device, since the structure is sealed with a lid, it is necessary to ensure the height of the lid, which is disadvantageous in reducing the thickness of the surface acoustic wave device.

【0018】そこで、本発明は上記従来の諸問題に鑑み
て完成されたものであり、簡便な構成でSAWの振動空
間への絶縁性樹脂の入り込みを完全に阻止でき、振動空
間を均一な高さ、幅で正確に形成し得、その結果、SA
W装置の特性劣化がなく、また極めて薄型で、小型軽量
化が可能で、さらには低コストで製造可能な弾性表面波
装置を提供することを目的とする。
Therefore, the present invention has been completed in view of the above-mentioned conventional problems, and it is possible to completely prevent the insulating resin from entering the vibration space of the SAW with a simple configuration, and to make the vibration space a uniform height. Now, it can be formed precisely in width, so that SA
It is an object of the present invention to provide a surface acoustic wave device that does not deteriorate the characteristics of a W device, is extremely thin, can be reduced in size and weight, and can be manufactured at low cost.

【0019】[0019]

【課題を解決するための手段】本発明の弾性波装置は、
下面に弾性表面波を発生させる励振電極を設けた圧電基
板を、前記励振電極と接続される導体パターンを有する
絶縁基板上に、前記励振電極の振動空間を形成した状態
で載置させるとともに、前記圧電基板と前記絶縁基板と
を光硬化性樹脂から成る接着材で気密封止したことを特
徴とする。
An elastic wave device according to the present invention comprises:
A piezoelectric substrate provided with an excitation electrode for generating a surface acoustic wave on the lower surface is placed on an insulating substrate having a conductor pattern connected to the excitation electrode, in a state where a vibration space for the excitation electrode is formed, and The piezoelectric substrate and the insulating substrate are hermetically sealed with an adhesive made of a photocurable resin.

【0020】具体的には、例えば、弾性表面波を発生さ
せる励振電極を設けた圧電基板を、前記励振電極と接続
される導体パターンを有する絶縁基板に載置させるとと
もに、圧電基板と絶縁基板とを光硬化性樹脂から成る枠
状の接着材で気密封止を行う。
Specifically, for example, a piezoelectric substrate provided with an excitation electrode for generating a surface acoustic wave is placed on an insulating substrate having a conductor pattern connected to the excitation electrode, and the piezoelectric substrate and the insulating substrate are connected to each other. Is hermetically sealed with a frame-shaped adhesive made of a photocurable resin.

【0021】また、この枠状の接着材の少なくとも外周
面に耐湿性の高い保護膜が被着されるようにしてもよ
い。
Further, a protective film having high moisture resistance may be applied to at least the outer peripheral surface of the frame-shaped adhesive.

【0022】なお、上記接着材により形成された励振電
極の振動空間内に不活性ガスを充満させるようにしても
よい。ここで、不活性ガスとはアルゴンガス等の希ガス
だけでなく窒素ガス等を含むものとする。
The vibration space of the excitation electrode formed by the adhesive may be filled with an inert gas. Here, the inert gas includes not only a rare gas such as an argon gas but also a nitrogen gas and the like.

【0023】[0023]

【発明の実施の形態】本発明に係る実施の形態について
図面に基づき詳細に説明する。図1は弾性表面波装置S
1の一部省略平面図であり、簡単のため圧電基板1と絶
縁基板7との間に介在させる後記する枠状体(接着材)
6の上半分を切断した平面図であり、図2は図1のA−
A線断面図であり、図1においては、省略したSAW素
子を構成する圧電基板1や励振電極であるIDT電極5
等について図示している。
Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a surface acoustic wave device S
1 is a partially omitted plan view, and a frame-like body (adhesive material) to be described later interposed between a piezoelectric substrate 1 and an insulating substrate 7 for simplicity;
6 is a plan view of the upper half of FIG. 6, and FIG.
FIG. 1 is a cross-sectional view taken along the line A. In FIG. 1, a piezoelectric substrate 1 and an IDT electrode 5 serving as an excitation electrode are included in the omitted SAW element.
Etc. are illustrated.

【0024】図2において、1は圧電基板、2は後記す
る励振電極に接続される入出力電極パッド、3はバンプ
等の接続体、4は後記する電極リードパターン8のパッ
ド(導電パターン)、5は励振電極であるIDT電極、
6は光硬化性絶縁性樹脂から成る枠状体(接着材)、1
1はこの枠状体6の少なくとも本体外周面に設けられた
耐湿性の保護膜である。また、7はセラミックス,樹脂
等からなる絶縁性基板、8は外部の駆動回路、共振回
路、接地回路等に接続され絶縁性基板7に設けられた電
極リードパターンである。また、9はIDT電極5の振
動空間である。
In FIG. 2, 1 is a piezoelectric substrate, 2 is an input / output electrode pad connected to an excitation electrode described later, 3 is a connection body such as a bump, 4 is a pad (conductive pattern) of an electrode lead pattern 8 described later, 5 is an IDT electrode which is an excitation electrode,
Reference numeral 6 denotes a frame (adhesive) made of a photocurable insulating resin;
Reference numeral 1 denotes a moisture-resistant protective film provided on at least the outer peripheral surface of the frame 6. Reference numeral 7 denotes an insulating substrate made of ceramics, resin, or the like, and reference numeral 8 denotes an electrode lead pattern provided on the insulating substrate 7 connected to an external drive circuit, a resonance circuit, a ground circuit, and the like. Reference numeral 9 denotes a vibration space of the IDT electrode 5.

【0025】このようにして弾性波装置S1は、下面に
弾性表面波を発生させるIDT電極9を設けた圧電基板
1を、IDT電極と接続される導体パターン4を有する
絶縁基板7に載置させるとともに、圧電基板1の下面外
周部と絶縁基板7の上面とを光硬化性樹脂から成る枠状
体6で接合されており、さらに、枠状体6の少なくとも
外周面6aに耐湿性の高い保護膜11が被着されてい
る。
As described above, in the acoustic wave device S1, the piezoelectric substrate 1 provided with the IDT electrode 9 for generating a surface acoustic wave on the lower surface is placed on the insulating substrate 7 having the conductor pattern 4 connected to the IDT electrode. At the same time, the outer peripheral portion of the lower surface of the piezoelectric substrate 1 and the upper surface of the insulating substrate 7 are joined by a frame member 6 made of a photocurable resin. A membrane 11 has been applied.

【0026】SAW素子は、圧電基板1上に設けられ、
互いに噛み合うように形成された少なくとも一対の櫛歯
状電極のIDT電極5等から構成されるが、IDT電極
5は、所望の特性を得るために、複数対の櫛歯状電極
を、直列接続方式,並列接続方式で接続して構成しても
よい。
The SAW element is provided on the piezoelectric substrate 1,
The IDT electrode 5 is composed of at least a pair of IDT electrodes 5 of a comb-like electrode formed so as to mesh with each other. In order to obtain desired characteristics, the IDT electrode 5 is formed by connecting a plurality of pairs of comb-like electrodes in series connection. , May be connected by a parallel connection method.

【0027】絶縁性基板7は、例えば一枚のセラミック
基板、又は、セラミック基板と1枚以上の枠状セラミッ
ク基板とを積層することによって作製し、絶縁性基板7
に設けられる導体パターン4は、電解めっき又は無電解
めっき法によって形成する。
The insulating substrate 7 is manufactured, for example, by laminating one ceramic substrate or a ceramic substrate and one or more frame-shaped ceramic substrates.
Is formed by electrolytic plating or electroless plating.

【0028】また、IDT電極5は蒸着法,スパッタリ
ング法又はCVD法等の薄膜形成法により形成する。
The IDT electrode 5 is formed by a thin film forming method such as a vapor deposition method, a sputtering method or a CVD method.

【0029】また、接続体3は、Au,Al等の金属の
ワイヤをボールボンディング法によりバンプとなるよう
に形成するか、Au,はんだ等からなるバンプを蒸着
法,印刷法,転写法,無電解めっき法又は電解めっき法
等により、パッド2上に形成することによって得られ
る。
The connection body 3 is formed by forming a metal wire such as Au, Al or the like into a bump by a ball bonding method, or forming a bump made of Au, solder or the like by a vapor deposition method, a printing method, a transfer method, It is obtained by forming on the pad 2 by an electrolytic plating method or an electrolytic plating method.

【0030】枠状体6は絶縁基板7の導体パターン4上
に、ディスペンサーで塗布するか又は印刷法により絶縁
性の光硬化性樹脂を塗布して得られる。
The frame 6 is obtained by applying a dispenser on the conductive pattern 4 of the insulating substrate 7 or by applying an insulating photocurable resin by a printing method.

【0031】そして、圧電基板1のIDT電極5が設け
られた主面(機能面)が絶縁基板7の上面に対面するフ
ェースダウン構成として、接続体3を導体パターン4に
導電性接着剤で電気的に導通させて接続し、圧電基板1
を絶縁基板7上に載置固定する。
The main body (functional surface) of the piezoelectric substrate 1 on which the IDT electrode 5 is provided faces the upper surface of the insulating substrate 7 in a face-down configuration, and the connecting body 3 is electrically connected to the conductive pattern 4 by a conductive adhesive. And electrically connected to each other, and the piezoelectric substrate 1
Is placed and fixed on the insulating substrate 7.

【0032】その後、枠状体6がIDT電極5が形成さ
れた機能面に入り込まない構成とし、圧電基板1の固定
とIDT電極5が存在する振動空間9の気密を確実にす
るために、枠状体6が圧電基板1の全外周を囲むような
構造とする。
After that, the frame 6 does not enter the functional surface on which the IDT electrode 5 is formed, and the frame 6 is secured to secure the piezoelectric substrate 1 and airtight the vibration space 9 where the IDT electrode 5 is present. The structure 6 is configured such that the shape body 6 surrounds the entire outer periphery of the piezoelectric substrate 1.

【0033】そして、光硬化性樹脂を側面からの紫外線
照射又はランプ炉を通して硬化させ、弾性表面波装置S
1を完成する。ここで、枠状体6の少なくとも外周面6
aに枠状体6の本体を構成する光硬化性樹脂より耐湿性
の優れた保護膜で覆うように被着させると、振動空間9
内をより気密にすることができるのでよい。
Then, the photo-curable resin is cured by irradiating ultraviolet light from the side or passing through a lamp furnace, and the surface acoustic wave device
Complete 1 Here, at least the outer peripheral surface 6 of the frame 6
a is covered with a protective film having better moisture resistance than the photo-curable resin constituting the main body of the frame-shaped body 6, the vibration space 9
It is good because the inside can be made more airtight.

【0034】例えば、枠状体6の本体はアクリル系の光
硬化性樹脂とし、保護膜11をウレタン系の光硬化性樹
脂、もしくはエポキシ系樹脂とする。特に、ウレタン系
とするとアクリル系のような樹脂自体の水素結合による
接着だけでなく、下地との密着性も増す。なお、保護膜
11に所定量の金属粒子を含有させてもよい。また、枠
状体6の本体をアクリル系の光硬化性樹脂とし保護膜1
1を半田材で覆ってもよい。このようにすると、樹脂封
止より気密性が増し、耐湿性も向上する。なお、保護膜
11をエポキシ系樹脂とした場合、エポキシ系樹脂は熱
硬化性ゆえに、熱工程を伴うので、IDT電極に影響を
受けない程度、例えば150℃,30秒の加熱等により
熱硬化させると、圧電基板1に対して急激な温度勾配を
与えることがない。
For example, the main body of the frame 6 is made of an acrylic photocurable resin, and the protective film 11 is made of a urethane photocurable resin or an epoxy resin. In particular, when urethane is used, not only adhesion due to hydrogen bonding of the resin itself, such as acrylic, but also adhesion to the base increases. The protective film 11 may contain a predetermined amount of metal particles. The main body of the frame 6 is made of an acrylic photocurable resin, and the protective film 1 is made of a resin.
1 may be covered with a solder material. In this case, the airtightness is increased as compared with the resin sealing, and the moisture resistance is also improved. In the case where the protective film 11 is made of an epoxy resin, the epoxy resin is heat-curable and involves a heat process. Therefore, the epoxy resin is heat-cured by heating at 150 ° C. for 30 seconds to such an extent that the IDT electrode is not affected. Thus, no sharp temperature gradient is applied to the piezoelectric substrate 1.

【0035】次に、実施の他の形態である図3について
説明する。上記と同じ方法で光硬化性樹脂が接続体3を
含み圧電基板1の全外周部を囲む構造とした後、圧電基
板1の裏面全体を覆うようにディスペンサー等で光硬化
性樹脂を塗布し、上部より紫外線照射又はランプ炉を通
して硬化させて、蓋体となる保護部材10を形成し、弾
性表面波装置S2を完成してもよい。
Next, another embodiment of the present invention will be described with reference to FIG. In the same manner as described above, after the photocurable resin has a structure including the connecting body 3 and surrounding the entire outer peripheral portion of the piezoelectric substrate 1, the photocurable resin is applied with a dispenser or the like so as to cover the entire back surface of the piezoelectric substrate 1. The protective member 10 serving as a lid may be formed by irradiating ultraviolet light or passing through a lamp furnace from above to form the cover member, thereby completing the surface acoustic wave device S2.

【0036】ここで、枠状体6,保護部材10の主材料
としては、ポリエステルアクリレート,ポリウレタンア
クリレート,エポキシアクリレート,ポリエーテルアク
リレート,オリゴアクリレートなどのアクリル系オリゴ
マーが用いられる。
Here, as the main material of the frame 6 and the protective member 10, acrylic oligomers such as polyester acrylate, polyurethane acrylate, epoxy acrylate, polyether acrylate, and oligo acrylate are used.

【0037】特に、ディスペンサーによる塗布、印刷法
による塗布で必要以上に光硬化性絶縁材料が広がらない
ように、添加剤としてチクソ性付与剤を添加したり、フ
ィラーの量で粘度を高目に調整したものが好ましく、S
AW素子の電極腐食が起こらないように不純物イオン濃
度を極力低減したものが好ましい。
In particular, a thixotropic agent is added as an additive or the viscosity is adjusted to be higher by the amount of the filler so that the photocurable insulating material does not spread more than necessary by coating with a dispenser or printing. Are preferred, and S
It is preferable that the impurity ion concentration is reduced as much as possible so that the electrode corrosion of the AW element does not occur.

【0038】次に、実施のさらに他の形態である図4に
ついて説明する。弾性表面波装置S3のように、絶縁基
板7に後記する凹部7aを形成することにより、励振電
極5の振動空間9を確保するようにしてもよい。すなわ
ち、絶縁基板7の段部7bに形成された導体パターン4
と圧電基板1に形成された入出力電極パッド2とを電気
的に接続し、入出力電極パッド2と電気的に接続された
励振電極5の振動空間を確保するために、励振電極5の
下部に絶縁基板7の凹部7aを形成するようにしてもよ
い。そして、このような場合は接着材6は圧電基板1の
裏面(上面)1aと絶縁基板7の周縁部7cとの間を気
密封止してもよいし、また絶縁基板7の段部7dと圧電
基板1の下面との間を気密封止してもよい。
Next, another embodiment of the present invention will be described with reference to FIG. As in the case of the surface acoustic wave device S3, the vibration space 9 of the excitation electrode 5 may be secured by forming a concave portion 7a described later in the insulating substrate 7. That is, the conductor pattern 4 formed on the step 7b of the insulating substrate 7
Is electrically connected to the input / output electrode pads 2 formed on the piezoelectric substrate 1, and a lower portion of the excitation electrode 5 is secured to secure a vibration space of the excitation electrode 5 electrically connected to the input / output electrode pads 2. The concave portion 7a of the insulating substrate 7 may be formed at the same time. In such a case, the adhesive 6 may hermetically seal the space between the back surface (upper surface) 1a of the piezoelectric substrate 1 and the peripheral portion 7c of the insulating substrate 7, or may form a seal with the step portion 7d of the insulating substrate 7. The space between the piezoelectric substrate 1 and the lower surface may be hermetically sealed.

【0039】上記と同じ方法で光硬化性樹脂が接続体3
を含み圧電基板1の全外周部を囲む構造とした後、圧電
基板1の裏面全体を覆うようにディスペンサー等で光硬
化性樹脂を塗布し、上部より紫外線照射又はランプ炉を
通して硬化させて、蓋体となる保護部材10を形成し、
弾性表面波装置S2を完成してもよい。
In the same manner as described above, the photocurable resin is
Then, a photo-curable resin is applied by a dispenser or the like so as to cover the entire back surface of the piezoelectric substrate 1 and is cured from above by irradiating ultraviolet rays or passing through a lamp furnace. Forming a protective member 10 serving as a body,
The surface acoustic wave device S2 may be completed.

【0040】ここで、枠状体6,保護部材10の主材料
としては、ポリエステルアクリレート,ポリウレタンア
クリレート,エポキシアクリレート,ポリエーテルアク
リレート,オリゴアクリレートなどのアクリル系オリゴ
マーが用いられる。
Here, as the main material of the frame 6 and the protective member 10, acrylic oligomers such as polyester acrylate, polyurethane acrylate, epoxy acrylate, polyether acrylate, and oligo acrylate are used.

【0041】特に、ディスペンサーによる塗布、印刷法
による塗布で必要以上に光硬化性絶縁材料が広がらない
ように、添加剤としてチクソ性付与剤を添加したり、フ
ィラーの量で粘度を高目に調整したものが好ましく、S
AW素子の電極腐食が起こらないように不純物イオン濃
度を極力低減したものが好ましい。
In particular, a thixotropic agent is added as an additive or the viscosity is adjusted to be higher by the amount of the filler so that the photocurable insulating material is not unnecessarily spread by dispenser coating or printing. Are preferred, and S
It is preferable that the impurity ion concentration is reduced as much as possible so that the electrode corrosion of the AW element does not occur.

【0042】、図1〜図4において、振動空間9内に低
湿度の空気を封入し密閉するようにしてもよい。これに
より、IDT電極5の酸化等による劣化を抑制でき好ま
しい。また、空気の代わりに、窒素ガス,アルゴンガス
などの不活性ガス等を封入し密閉すれば、より好ましい
効果が得られる。
In FIGS. 1 to 4, low-humidity air may be sealed in the vibrating space 9 to seal it. This is preferable because deterioration of the IDT electrode 5 due to oxidation or the like can be suppressed. Further, if an inert gas such as nitrogen gas or argon gas or the like is sealed and sealed instead of air, more preferable effects can be obtained.

【0043】本発明において、IDT電極5はAlある
いはAl合金(Al−Cu系、Al−Ti系等)からな
り、特にAlの場合は励振効率が高く、材料コストが低
いため好ましい。また、IDT電極5の形状は、互いに
噛み合うように形成された櫛歯状であるが、複数の電極
指を平行に配列した反射器のようなスリット型のものに
も適用でき、それらを併用したタイプであってよい。
In the present invention, the IDT electrode 5 is made of Al or an Al alloy (Al-Cu system, Al-Ti system, etc.). In particular, Al is preferable because of high excitation efficiency and low material cost. The IDT electrode 5 has a comb-like shape formed so as to mesh with each other. However, the IDT electrode 5 can be applied to a slit-type electrode such as a reflector in which a plurality of electrode fingers are arranged in parallel. It may be a type.

【0044】そして、IDT電極5の対数は50〜20
0、電極指の幅は0.1〜10.0μm、電極指の間隔
は0.1〜10.0μm、電極指の交差幅は10〜80
μm、IDT電極5の厚みは0.2〜0.4μmとする
ことが、共振器あるいはフィルタとしの所期の特性を得
るうえで好適である。また、IDT電極5のSAWの伝
搬路の両端に、SAWを反射し効率よく共振させるため
の反射器を設けてもよく、さらには、電極指間にZn
O、AlO等の圧電材料を成膜すれば、SAWの共振効
率が向上し好適である。
The logarithm of the IDT electrode 5 is 50 to 20.
0, the width of the electrode fingers is 0.1 to 10.0 μm, the interval between the electrode fingers is 0.1 to 10.0 μm, and the intersection width of the electrode fingers is 10 to 80.
It is preferable to set the thickness of the IDT electrode 5 to 0.2 to 0.4 μm in order to obtain desired characteristics as a resonator or a filter. Further, reflectors for reflecting the SAW and efficiently resonating the SAW may be provided at both ends of the SAW propagation path of the IDT electrode 5.
It is preferable to form a film of a piezoelectric material such as O or AlO because the SAW resonance efficiency is improved.

【0045】圧電基板1としては、36°Yカット−X
伝搬のLiTaO3 単結晶,64°Yカット−X伝搬の
LiNbO3 単結晶,45°Xカット−Z伝搬のLiB
4 7 単結晶は、電気機械結合係数が大きく且つ群遅延
時間温度係数が小さいため好ましい。また、圧電基板の
厚みは0.3〜0.5mm程度がよく、0.3mm未満で
は圧電基板が脆くなり、0.5mm超では材料コストが
大きくなる。
As the piezoelectric substrate 1, a 36 ° Y-cut-X
Propagating LiTaO 3 single crystal, 64 ° Y cut-X propagating LiNbO 3 single crystal, 45 ° X cut-Z propagating LiB
4 O 7 single crystal is preferable because it has a large electromechanical coupling coefficient and a small group delay time temperature coefficient. The thickness of the piezoelectric substrate is preferably about 0.3 to 0.5 mm. If the thickness is less than 0.3 mm, the piezoelectric substrate becomes brittle, and if it exceeds 0.5 mm, the material cost increases.

【0046】かくして、本発明は、SAWの振動空間9
への絶縁性樹脂の入り込みを完全に阻止できる。また、
圧電基板1の焦電性によるSAW素子の損傷が起きない
ので、特性劣化を極力防止できる。また、振動空間9を
均一な高さ、幅で正確に形成できるので薄型化や小型化
が可能である。さらに、作製時に加熱工程を実施しない
ので、封止用絶縁材料にボイド等の欠陥が発生すること
がないので、長期信頼性を確保することができる。
Thus, the present invention provides a vibration space 9 for a SAW.
It is possible to completely prevent the insulating resin from entering the semiconductor device. Also,
Since the SAW element is not damaged due to the pyroelectricity of the piezoelectric substrate 1, the characteristic deterioration can be prevented as much as possible. Further, since the vibration space 9 can be accurately formed with a uniform height and width, the thickness and the size can be reduced. Further, since a heating step is not performed at the time of manufacturing, defects such as voids do not occur in the sealing insulating material, and thus long-term reliability can be secured.

【0047】なお、本発明は上記の実施形態に限定され
るものではなく、上記例のように接続体3を枠状体6の
内部に含ませるようにしなくともよく、接続体3の外周
部を枠状体6でもって取り囲んで、圧電基板1と絶縁基
板7とを接合するようにしてもよく、また、例えば、振
動空間9内の絶縁基板7の上面に枠状のダム材を設けた
り、凹部等を形成することにより、枠状体6を形成する
ための光硬化性樹脂の入り込みを極力防止するようにし
てもよく、本発明の要旨を逸脱しない範囲内で種々の変
更は何等差し支えない。
It should be noted that the present invention is not limited to the above-described embodiment, and the connecting body 3 does not need to be included in the frame-shaped body 6 as in the above-described example. May be surrounded by a frame body 6 to join the piezoelectric substrate 1 and the insulating substrate 7. Also, for example, a frame-shaped dam member may be provided on the upper surface of the insulating substrate 7 in the vibration space 9. By forming a concave portion or the like, entry of the photocurable resin for forming the frame-shaped body 6 may be prevented as much as possible, and various changes may be made without departing from the scope of the present invention. Absent.

【0048】[0048]

【実施例】次に、図2に基づいて本発明の具体的な実施
例について説明する。図2に示すように、圧電基板1と
して36°Yカット−X伝搬のLiTaO3結晶を用
い、そのチップサイズは、1.1mm×1.5mmであ
った。また、実装基板として3.0mm×3.0mm、
厚さ500μmのアルミナ基板を用いた。アルミナ基板
には合計1μm膜厚のAu及びNiを無電解めっきにて
形成した。
Next, a specific embodiment of the present invention will be described with reference to FIG. As shown in FIG. 2, a 36 ° Y-cut X-propagating LiTaO 3 crystal was used as the piezoelectric substrate 1, and its chip size was 1.1 mm × 1.5 mm. In addition, 3.0 mm × 3.0 mm as a mounting board,
An alumina substrate having a thickness of 500 μm was used. Au and Ni having a total thickness of 1 μm were formed on the alumina substrate by electroless plating.

【0049】接続体3は、Auのワイヤーをボールボン
ディング法によりバンプとなるように形成した。バンプ
径は70μm、高さは50μmであった。
The connection body 3 was formed by forming a bump of an Au wire by a ball bonding method. The bump diameter was 70 μm and the height was 50 μm.

【0050】絶縁基板7には接続体3が当接する位置
に、予め変成アクリレート系の紫外線硬化樹脂をディス
ペンサーにより塗布した。塗布した樹脂の線幅は、約1
00μmであった。
A modified acrylate-based ultraviolet curable resin was previously applied to the insulating substrate 7 at a position where the connector 3 was in contact with the dispenser. The line width of the applied resin is about 1
It was 00 μm.

【0051】接続体3と導電パターン4との接続は、A
g−Pd合金を含む熱硬化性のエポキシ系の導電性接着
剤を接続体3に転写塗布し、窒素雰囲気中でSAW素子
と絶縁基板7をフェースダウンでアライメントした後、
側面より80mW/cm2の照度で30秒間、紫外線を
照射して変成アクリレート光硬化性樹脂を硬化させて枠
状体6を形成した。
The connection between the connection body 3 and the conductive pattern 4 is A
After transferring and applying a thermosetting epoxy-based conductive adhesive containing a g-Pd alloy to the connection body 3 and aligning the SAW element and the insulating substrate 7 face down in a nitrogen atmosphere,
The modified acrylate photocurable resin was cured by irradiating ultraviolet rays from the side surface at an illuminance of 80 mW / cm2 for 30 seconds to form the frame 6.

【0052】さらに、この光硬化性樹脂の外周面6aに
ビスフェノール型エポキシ樹脂をディスペンサーにて塗
布し、アニール炉や、クリーンオーブン、ホットプレー
ト上で150℃,30秒間、加熱硬化させた。
Further, a bisphenol-type epoxy resin was applied to the outer peripheral surface 6a of the photocurable resin with a dispenser, and was cured by heating at 150 ° C. for 30 seconds in an annealing furnace, a clean oven, or a hot plate.

【0053】以上の工程で、振動空間9の内部まで光硬
化性樹脂が入り込まず、振動空間9を充分に確保するこ
とができ、さらに接続体3を含んだSAW素子チップの
外周部のみを光硬化性絶縁樹脂で封止した構造の弾性表
面波装置を作製することができた。また、弾性表面波装
置の高さは1.0mm程度であった。
In the above steps, the photocurable resin does not enter the inside of the vibration space 9, the vibration space 9 can be sufficiently secured, and only the outer peripheral portion of the SAW element chip including the connection body 3 is exposed to light. A surface acoustic wave device having a structure sealed with a curable insulating resin could be manufactured. The height of the surface acoustic wave device was about 1.0 mm.

【0054】このようにして、従来のワイヤボンディン
グ工程が不要となり、ワイヤの横方向の空間及びワイヤ
の高さ方向のサイズを縮小でき、小型化・薄型化を図る
ことができた。
As described above, the conventional wire bonding step is not required, the space in the horizontal direction of the wire and the size in the height direction of the wire can be reduced, and the size and thickness can be reduced.

【0055】[0055]

【発明の効果】本発明の弾性表面波装置によれば、光硬
化性樹脂を常温で光硬化させて励振電極が形成された空
間を気密にすることができるので、圧電基板に対して急
激な温度勾配を与えることがなく、圧電基板の焦電性に
よる励振電極のオープン不良等の問題が発生することが
ない。
According to the surface acoustic wave device of the present invention, the space in which the excitation electrode is formed can be made air-tight by photo-curing the photo-curable resin at normal temperature, so No temperature gradient is applied, and problems such as open failure of the excitation electrode due to pyroelectricity of the piezoelectric substrate do not occur.

【0056】また、接着材の内側領域に形成されたSA
W素子の振動空間を形成する気体層の熱膨張が生じない
ので、従来のように封止樹脂のボイド発生が無く、長期
信頼性に優れ特性の劣化のない弾性表面波装置を提供で
きる。
Further, the SA formed in the inner region of the adhesive material
Since the thermal expansion of the gas layer forming the vibrating space of the W element does not occur, it is possible to provide a surface acoustic wave device that does not generate voids in the sealing resin and has excellent long-term reliability and no deterioration in characteristics as in the related art.

【0057】また、接着材の光硬化性樹脂はゲル化が比
較的容易に進行することができ、短時間且つ簡便な工程
で弾性表面波装置を作製することが可能である。
Further, the photocurable resin of the adhesive can be relatively easily gelled, and the surface acoustic wave device can be manufactured in a short and simple process.

【0058】また、光硬化性樹脂をバンプ等の接続体を
含めて塗布し硬化させると、よりいっそう堅固に圧電基
板を絶縁基板に対して接合固定することができ、絶縁基
板とSAW素子を形成する圧電基板の線膨張係数差によ
る応力を分散緩和させることができる。
When the photo-curable resin is applied and cured, including the connection body such as bumps, the piezoelectric substrate can be more firmly bonded and fixed to the insulating substrate, and the SAW element and the insulating substrate can be formed. The stress due to the difference in linear expansion coefficient of the piezoelectric substrate can be dispersed and relaxed.

【0059】さらに、本発明によれば十分な薄型化及び
小型化を図ることが可能な弾性表面波装置を提供でき
る。
Further, according to the present invention, it is possible to provide a surface acoustic wave device capable of sufficiently reducing the thickness and size.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る弾性表面波装置の一実施形態を説
明する一部省略平面図である。
FIG. 1 is a partially omitted plan view illustrating an embodiment of a surface acoustic wave device according to the present invention.

【図2】図1のA−A線断面図である。FIG. 2 is a sectional view taken along line AA of FIG.

【図3】本発明に係る他の弾性表面波装置の一実施形態
を説明する断面図である。
FIG. 3 is a cross-sectional view illustrating an embodiment of another surface acoustic wave device according to the present invention.

【図4】本発明に係る他の弾性表面波装置の一実施形態
を説明する断面図である。
FIG. 4 is a cross-sectional view illustrating an embodiment of another surface acoustic wave device according to the present invention.

【図5】従来の弾性表面波装置を説明する断面図であ
る。
FIG. 5 is a cross-sectional view illustrating a conventional surface acoustic wave device.

【図6】従来の他の弾性表面波装置を説明する断面図で
ある。
FIG. 6 is a cross-sectional view illustrating another conventional surface acoustic wave device.

【符号の説明】[Explanation of symbols]

1:圧電基板 2:入出力電極パッド 3:接続体(バンプ) 4:導体パターン 5:IDT電極(励振電極) 6:枠状体(接着材) 7:絶縁基板 8:電極リードパターン 9:振動空間 10:保護部材 S1,S2:弾性表面波装置 1: piezoelectric substrate 2: input / output electrode pad 3: connection body (bump) 4: conductor pattern 5: IDT electrode (excitation electrode) 6: frame (adhesive) 7: insulating substrate 8: electrode lead pattern 9: vibration Space 10: Protection member S1, S2: Surface acoustic wave device

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 下面に弾性表面波を発生させる励振電極
を設けた圧電基板を、前記励振電極と接続される導体パ
ターンを有する絶縁基板上に、前記励振電極の振動空間
を形成した状態で載置させるとともに、前記圧電基板と
前記絶縁基板とを光硬化性樹脂から成る接着材で気密封
止したことを特徴とする弾性表面波装置。
1. A piezoelectric substrate having an excitation electrode for generating a surface acoustic wave on a lower surface thereof is mounted on an insulating substrate having a conductor pattern connected to the excitation electrode in a state in which a vibration space of the excitation electrode is formed. Wherein the piezoelectric substrate and the insulating substrate are hermetically sealed with an adhesive made of a photocurable resin.
JP23526797A 1997-08-29 1997-08-29 Surface acoustic wave device Pending JPH1174755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23526797A JPH1174755A (en) 1997-08-29 1997-08-29 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23526797A JPH1174755A (en) 1997-08-29 1997-08-29 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH1174755A true JPH1174755A (en) 1999-03-16

Family

ID=16983569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23526797A Pending JPH1174755A (en) 1997-08-29 1997-08-29 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH1174755A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181015B1 (en) * 1998-02-27 2001-01-30 Tdk Corporation Face-down mounted surface acoustic wave device
JP2002232257A (en) * 2001-01-31 2002-08-16 Kyocera Corp Electronic parts device and manufacturing method of the same
KR100431180B1 (en) * 2001-12-07 2004-05-12 삼성전기주식회사 Method of packaging surface acoustic wave device
JP2006142447A (en) * 2004-11-22 2006-06-08 Sony Corp Functional element and its manufacturing method
JP2006311183A (en) * 2005-04-28 2006-11-09 Sony Corp Semiconductor device and its manufacturing method
JP2009247014A (en) * 2009-07-27 2009-10-22 Kyocera Corp Surface acoustic wave device
JP2014099928A (en) * 2007-10-30 2014-05-29 Kyocera Corp Elastic wave device and elastic wave module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181015B1 (en) * 1998-02-27 2001-01-30 Tdk Corporation Face-down mounted surface acoustic wave device
US6417026B2 (en) 1998-02-27 2002-07-09 Tdk Corporation Acoustic wave device face-down mounted on a substrate
JP2002232257A (en) * 2001-01-31 2002-08-16 Kyocera Corp Electronic parts device and manufacturing method of the same
JP4582922B2 (en) * 2001-01-31 2010-11-17 京セラ株式会社 Electronic component device and manufacturing method thereof
KR100431180B1 (en) * 2001-12-07 2004-05-12 삼성전기주식회사 Method of packaging surface acoustic wave device
JP2006142447A (en) * 2004-11-22 2006-06-08 Sony Corp Functional element and its manufacturing method
JP2006311183A (en) * 2005-04-28 2006-11-09 Sony Corp Semiconductor device and its manufacturing method
JP2014099928A (en) * 2007-10-30 2014-05-29 Kyocera Corp Elastic wave device and elastic wave module
JP2009247014A (en) * 2009-07-27 2009-10-22 Kyocera Corp Surface acoustic wave device

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