JP2764027B2 - Sample processing method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for processing a sample such as a semiconductor device substrate.

[0002]

2. Description of the Related Art A sample such as a semiconductor element substrate is etched using a chemical solution, or is etched using, for example, plasma. In such a sample etching process, it is necessary to pay sufficient attention to corrosion of the sample after the etching process.

As a technique for preventing corrosion of a sample after such an etching treatment, a technique disclosed in, for example, JP-A-59-18632 is known.
No. 6, as disclosed in Japanese Patent Application Laid-Open Publication No. 6-206, an ashing process (ashing) of a resist film using plasma in a plasma processing chamber connected to the etching chamber while maintaining a vacuum with the etching chamber remains in the resist film and the like. What removes a chlorine compound which is a thing is known. Further, by setting the temperature of the sample after the etching treatment to 200 ° C. or higher, it is possible to promote the vaporization of the remaining corrosive chloride, thereby preventing the corrosion of the sample after the etching treatment. ing. Further, for example, as described in JP-A-61-133388, an object to be processed, which is a sample after an etching process, is taken out of the etching process chamber and transported to the heat treatment chamber.
Here, heated air is blown onto the object to be dried, and then the object is taken out of the heat treatment chamber, washed with water, and dried to prevent corrosion of the object after the etching process due to reaction with the atmosphere. What is known is.

[0004]

SUMMARY OF THE INVENTION The above-mentioned prior art, that is, a technique in which a sample after an etching process is subjected to an ashing process using plasma, and a process in which a sample after an etching process is subjected to a temperature which promotes vaporization of residual corrosive substances. The technology of heating and the technology of washing and drying after drying the sample after the etching process have a problem that sufficient anticorrosion performance cannot be obtained depending on the type of the sample.

[0005] For example, it is considered that corrosion prevention after etching a single metal film such as aluminum (Al) as a wiring film is also effective in the above-mentioned conventional technology. However, samples having metals with different ionization tendencies, for example, Al-copper (Cu)
A sufficient anticorrosion effect after etching of an alloy film, a laminated film of the alloy film and a high melting point metal or a silicide film thereof, or the like cannot be obtained.

That is, with the recent remarkable progress of miniaturization, the wiring film has been further miniaturized, and in order to prevent disconnection due to electromigration, stress migration, etc., the conventional Al-silicon (Si) has been replaced with Cu as a wiring film. Al-Cu-Si alloy film whose content is several% or less,
In addition to these, in consideration of the purpose of reducing the contact resistance, an Al-Cu-Si alloy film and a refractory metal, for example,
Titanium-tungsten (TiW), titanium nitride (TiN), and molybdenum silicon (MoSi) films having a laminated structure have been used. In the case of such a wiring film structure, Al and Cu, W, T
Since metals such as i and Mo have different ionization tendencies, a kind of battery action works using a water component as a medium, so that corrosion of the wiring film is accelerated by so-called electrolytic corrosion, and corrosive substances generated by the etching process are reduced to 200 ° C. or more. Even if the sample is removed by ashing using plasma at a high temperature, corrosion occurs due to corrosive ions slightly remaining within several tens of minutes to several hours after the sample is taken out into the atmosphere.

It is an object of the present invention to provide an etching apparatus capable of sufficiently preventing corrosion of a sample after etching for a sample having a laminate of metal materials having different ionization tendencies.

[0008]

SUMMARY OF THE INVENTION The object of the present invention is to provide a plasma etching process for a sample having a stack of metals having different ionization tendencies through a resist mask formed on the stack. resist between the sample
Post-processing means for removing the mask by plasma, and the post- processed
And means for removing the residue after the etching from the sample, the sample is removed in the residue and device having a passivation treatment means using a gas plasma <br/> to passivating, different a step of plasma etching through a resist mask formed on the laminate material samples with a stack of a metal having a ionization tendency, a post-treatment step of removing the resist mask of the processed samples in the plasma, the The residue after the etching is removed from the post-processed sample.
Removing, the removed specimen of residue Gasupurazu
By the method a step of passivating utilizing Ma is achieved.

[0009]

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will now be described with reference to FIGS.
This will be described with reference to FIG. In FIG. 1, the sample processing apparatus includes a processing apparatus 10 for etching a sample, a plasma post-processing apparatus 20, a wet processing apparatus 30, and a drying processing apparatus 40, and means 50 to 70 for transporting the sample between the processing apparatuses. At least. 190 is a passivation treatment device
In addition, it is attached to the downstream side of the drying processing device 40.
This sample transporting means 90 is provided for the drying process of the drying device 40.
Passivation processing device for dried sample from chamber (not shown)
190 transfer function to the passivation chamber (not shown)
Have. In addition, the passivated sample can be collected, for example,
Transport means 200 for transporting to a cassette (not shown) for
Is provided.

In FIG. 1, as a processing apparatus 10, an apparatus for processing a sample under reduced pressure using plasma, for example, an etching processing is used. The plasma etching apparatus includes a plasma etching apparatus, a reactive sputter etching apparatus, a non-magnetic field type microwave plasma etching apparatus, a magnetic field type microwave plasma etching apparatus, and an electron cyclotron resonance (ECR) type microwave plasma apparatus. An etching device, a photo-excited plasma etching device, a neutral particle etching device and the like are employed. Also,
In addition to the above, as the processing apparatus 10, an apparatus for performing an etching process by using a wet sample, an apparatus for performing an etching process using a corrosive gas, and the like can be employed.

In FIG. 1, as the plasma post-processing apparatus 20, an apparatus for performing post-processing, for example, ashing processing, on a sample processed in the processing apparatus 10 under reduced pressure by using plasma is used. As the ashing processing device, a plasma ashing device, a non-magnetic type and a non-magnetic type microwave plasma etching device, an ECR type microwave plasma ashing device, a photo-excited plasma ashing device and the like are employed.

In FIG. 1, as the wet processing apparatus 30, a post-processed sample in the plasma post-processing apparatus 20 is subjected to wet processing, for example, a spinning wet processing apparatus. In the spinning wet processing apparatus, the post-processed sample is subjected to, for example, a washing treatment with water, a chemical solution,
For example, a spinning cleaning process is sequentially performed with water.
In this case, the chemical is appropriately selected depending on the substance to be removed from the post-processed sample. As the processing atmosphere, an inert gas atmosphere such as a nitrogen gas atmosphere or an air atmosphere is employed. After the wet treatment, a drying treatment such as draining may be performed in this state.

In FIG. 1, a drying apparatus 40 includes a wet processing apparatus 30 for drying a wet-processed sample, for example, an apparatus for heating and drying a wet-processed sample,
An apparatus or the like for performing a drying process by spraying a dry gas on the wet-processed sample is used. As the processing atmosphere, a nitrogen gas atmosphere or an air atmosphere is employed.

In FIG. 1, the sample transporting means 50 is
It has a function of transporting a processed sample between a processing station 0 (not shown) and a processing station (not shown) of the plasma post-processing apparatus 20. The sample transport means 60 includes:
It has a function of transporting a post-processed sample between a processing station of the plasma post-processing apparatus 20 and a processing station (not shown) of the wet processing apparatus 30.

The sample transport means 70 has a function of transporting a wet-processed sample between the processing station of the wet processing apparatus 30 and a processing station (not shown) of the drying processing apparatus 40. The sample transport means 50 can transfer a sample between each processing station of the processing apparatus 10 and the plasma post-processing apparatus 20. The sample transport means 60 can transfer a sample between each processing station of the plasma post-processing device 20 and the wet processing device 30. The sample transport means 70 includes the wet processing apparatus 30 and the drying processing apparatus 40.
Can be transferred to and from each processing station. As the sample transporting means 50 to 70, known transporting means, for example, a sample rake that holds a sample from its back surface to an arm that is mechanically, electrically, or magnetically rotated or reciprocally moved. An arm transfer device provided with a sample gripper that holds and holds a sample or sample at its outer peripheral edge or a sample suction device that sucks a sample, for example, electromagnetic suction or vacuum suction, or an endless belt wound around a drive roller and a driven roller A belt transport device that is hung, a device that transports a sample by the blowing force of gas, or the like is employed. When the processing apparatus 10 is an apparatus for processing a sample under reduced pressure using plasma, the sample transfer means 50 is provided so as to be able to transfer the processed sample in a reduced-pressure space without exposing the processed sample to the atmosphere.

In FIG. 1, in this case, a sample transporting means 80 for transporting a sample to be processed by the processing apparatus 10 to the processing apparatus 10 and a sample dried by the drying processing apparatus 40 are placed in, for example, a collection cassette (not shown). Sample transfer means 9 for transferring to (omitted)
0 is provided. As the sample transporting means 80 and 90, the same as the sample transporting means 50 to 60 are employed.

In FIG. 1, when the processing apparatus 10 is an apparatus for processing a sample using plasma under reduced pressure, for example,
The sample processing atmosphere of the processing device 10, the space in which the sample processed by the processing device 10 is transported to the processing device 10, and the space in which the processed sample is transported can be communicated with and blocked. In addition, the sample post-processing atmosphere of the plasma post-processing apparatus 20 and the space in which the processed sample is transported and the space in which the post-processed sample is transported can be communicated and shut off. The space in which the post-processed sample is transported, the sample wet processing atmosphere of the wet processing apparatus 30, the space in which the wet processed sample is transported, the sample drying processing atmosphere of the drying processing apparatus 40, and the dried sample are transported. The space may be in a state where communication is maintained, or may be capable of communicating and blocking each other.

In FIG. 1, a processing station is provided in the sample processing atmosphere of the processing apparatus 10. Processing device 10
Is an apparatus for processing a sample using plasma under reduced pressure, the processing station is a sample stage (not shown). A sample stage (not shown) is also provided as a processing station in each processing atmosphere of the plasma post-processing apparatus 20, the wet processing apparatus 30, and the drying processing apparatus 40. One or more samples can be placed on each sample stage. still,
In the processing apparatus 10 and the plasma post-processing apparatus 20, each sample stage may be used as one of the components forming the sample processing atmosphere.

2 and 3, the processing apparatus will be described more specifically and in detail. In FIG. 2 and FIG. 3, an apparatus for processing a sample under reduced pressure by using plasma is used as a processing apparatus.

In FIGS. 2 and 3, four openings 101a to 101b are formed in the top wall of the buffer chamber 100 in this case. An exhaust nozzle 10 is provided on the bottom wall of the buffer chamber 100.
2a is provided. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102a, and the other end of the exhaust pipe is connected to an intake port of a vacuum exhaust device (not shown) such as a vacuum pump. The planar shape of the buffer chamber 100 is substantially L-shaped. In this case, the buffer chamber 100 is formed of stainless steel. When the buffer chamber 100 is viewed in a plan view, the openings 101 are sequentially arranged from the long side end to the short side of the L-shape.
a to 101c are formed, and the opening 101d is formed on the short side of the L-shape. The openings 101a to 101d have a predetermined distance from adjacent openings.

An arm 81 is provided rotatably in the buffer chamber 10. The arm 81 is rotatable within the same plane in the buffer chamber 10. A sample scooping tool 82 is provided at the rotating end of the arm 81. The plane shape of the sample scooping tool 82 is substantially U-shaped. Arm 8
Reference numeral 1 denotes a rotation locus substantially at the center of the sample rake 82
01a and 101b are provided so as to substantially correspond to the respective central portions. That is, the rotation fulcrum of the arm 81 is positioned at such a position that the approximate center of the sample rake 82 draws the above-mentioned rotation locus. The rotation fulcrum of the arm 81 has its upper end protruded into the buffer chamber 100 at that position,
Further, the lower end portion is provided at the upper end of a rotating shaft 83 which is protruded out of the buffer chamber 100 and is rotatably provided on the bottom wall of the buffer chamber 100 while maintaining the airtightness in the buffer chamber 100. . The lower end of the rotation shaft 83 is connected to rotation driving means (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100.

An arm 51 is provided rotatably in the buffer chamber 100 at a position different from that of the arm 81. The arm 51 is rotatable in the same plane in the buffer chamber 100, and in this case, in the same plane as the rotation plane of the arm 81. A sample scooping tool 52 is provided at the rotating end of the arm 51. The plane shape of the sample rake tool 52 is substantially the same as that of the sample rake tool 82. Arm 5
Reference numeral 1 denotes a rotation trajectory substantially at the center of the sample rake 52
It is provided so as to substantially correspond to the center of each of 01b to 101d. That is, the rotation fulcrum of the arm 51 is positioned at such a position that the approximate center of the sample rake tool 52 draws the above-described rotation locus. An upper end portion of the rotation fulcrum of the arm 51 is projected into the buffer chamber 100 at that position,
Further, the lower end portion is provided at the upper end of a rotation shaft 53 which is protruded out of the buffer chamber 100 and is rotatably provided on the bottom wall of the buffer chamber 100 while maintaining the airtightness in the buffer chamber 100. . The lower end of the rotation shaft 53 is connected to a rotation drive unit, for example, a drive shaft of a motor 54 disposed outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100.

In FIG. 3, a sample stage 110 and a lid member 111 are provided so as to sandwich an opening 101a. Sample table 110
Has a sample setting surface on its surface. The plane shape and dimensions of the sample stage 110 are sufficient to close the opening 101a.
The dimensions. The sample stage 110 is provided in the buffer chamber 100 so that the opening 101a can be opened and closed, and in this case, can be moved up and down. In this case, the lifting shaft 112 is
1a is substantially at the center of the axis, and the upper end thereof is the buffer chamber 10a.
0, and the lower end is projected outside the buffer chamber 100 so that the bottom wall of the buffer chamber 100
It is provided to be able to move up and down while maintaining the airtightness inside.

The sample stage 110 is provided substantially horizontally at the upper end of the elevating shaft 112 with the sample setting surface as the upper surface. The lower end of the elevating shaft 112 is connected to an elevating drive unit, for example, a cylinder rod of a cylinder 113, which is arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. An airtight seal ring (not shown) is provided on the outer peripheral edge of the upper surface of the sample stage 110 or on the inner surface of the top wall of the buffer chamber 100 corresponding to the outer peripheral edge, that is, on the inner surface of the top wall of the buffer chamber 100 around the opening 101a. . The sample stage 110 is provided with a sample delivery tool (not shown). In other words, the sample delivery tool is provided so as to be movable up and down between a position below the sample setting surface of the sample stage 110 and a position protruding outward from the opening 101a with the opening 101a closed by the sample stage 110. Have been. Planar shape of the lid member 111,
The size is a shape and a size sufficient to cover the opening 101a. The lid member 111 is provided outside the buffer chamber 100 so that the opening 101a can be opened and closed, and in this case, can be moved up and down. In this case, the elevating shaft 114 is provided so as to be vertically movable outside the buffer chamber 100 with the axis of the elevating shaft 112 substantially coincident with the axis. The lid member 111 is provided substantially horizontally at the lower end of the elevating shaft 114. The upper end of the elevating shaft 114 is connected to an elevating drive unit, for example, a cylinder rod of a cylinder 115, which is disposed outside the buffer chamber 100 and above the lid member 111. An airtight seal ring (not shown) is provided on the outer peripheral edge of the lower surface of the lid member 111 or on the outer peripheral surface of the top wall of the buffer chamber 100 facing the outer peripheral edge, that is, on the outer peripheral surface of the buffer chamber 100 around the opening 101a. .

In FIG. 3, in this case, a substantially hemispherical discharge tube 11 is air-tightly provided on the top wall of the buffer chamber 100. The shape and size of the open part of the discharge tube 11
The opening of the discharge tube 11 is substantially the same as that of the opening 101b. The discharge tube 11 is formed of an electrically insulating material such as quartz. Outside the discharge tube 11, a waveguide 12a including the discharge tube 11 therein is provided. The magnetron 13 which is a microwave oscillating means and the waveguide 12a are connected by a waveguide 12b. The waveguides 12a and 12b are formed of an electrically conductive material. The waveguide 12b has an isolator 12c and a power monitor 12d. Outside the waveguide 12d, a solenoid coil 14 as a magnetic field generating means is mounted. In a space formed between the buffer chamber 100 and the discharge tube 11, a sample table 15 is provided so as to be able to move up and down.
In this case, the elevating shaft 16 has the axis of the discharge tube 11 substantially as the axis, the upper end of which is projected into the buffer chamber 100, and the lower end of which is projected outside the buffer chamber 100, so that the lifting chamber 16 is The bottom wall is provided movably up and down while maintaining the airtightness of the buffer chamber 100.

The sample table 15 has a sample setting surface on its surface. The plane shape and dimensions of the sample table 15 are determined by the opening 101b.
And the shape and dimensions that can be inserted. The sample stage 15 is provided substantially horizontally on the upper end of the elevating shaft 16 with the sample setting surface as the upper surface. The lower end of the elevating shaft 16 is connected to elevating drive means, for example, a cylinder rod of a cylinder (not shown) disposed outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. The lower end of the elevating shaft 16 is a bias power supply in this case. For example, it is connected to a high frequency power supply 18. The high frequency power supply 18 is installed outside the buffer chamber 100 and is grounded. In this case, the sample stage 1
5 and the elevating shaft 16 are in an electrically conductive state, and the buffer chamber 100 and the elevating shaft 16 are electrically insulated. The sample table 15 is provided with a sample delivery tool (not shown). That is, the position of the sample delivery tool below the sample setting surface of the sample table 15 and the sample setting surface of the sample table 15 b
1 sample scooping tool 82 and sample scooping tool 5 of arm 51
2, the sample scooping tools 82, 52
It is provided movably upward and downward.

The sample stage 15 has a structure capable of adjusting the temperature. For example, a heat medium flow path is formed inside the sample stage 15, and a cooling medium, which is a heat medium,
For example, a cooling medium such as cooling water, liquid ammonium or liquid nitrogen, or a heating medium such as warm water or a heating gas is supplied. Further, for example, the sample table 15 is provided with a heat generating means such as a heater.

Outside the sample table 15 and the elevating shaft 16, flanges 120 and 121 are provided in the buffer chamber 100. The inner diameters and the shapes of the flanges 120 and 121 substantially match those of the opening 101b. The flange 120 is hermetically provided on the inner surface of the bottom wall of the buffer chamber 100 about the axis of the discharge tube 11, the sample table 15, and the elevating shaft 16. The flange 121 is arranged to face the flange 120. A metal bellows 122 which is a telescopic shielding means is laid on the flanges 120 and 121. An elevating shaft (not shown) has a buffer chamber 1 at its upper end.
00, and its lower end is in the buffer chamber 10.
It is provided on the bottom wall of the buffer chamber 100 so as to protrude outside and move up and down while maintaining the airtightness in the buffer chamber 100. The flange 121 is connected to the upper end of the elevating shaft. The lower end of the elevating shaft is connected to elevating drive means, for example, a cylinder rod (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. An airtight seal ring (not shown) is provided on the upper surface of the flange 121 or on the inner surface of the top wall of the buffer chamber 100 facing the surface, that is, on the inner surface of the top wall of the buffer chamber 100 around the opening 101b. An exhaust nozzle 10 is provided on the bottom wall of the buffer chamber 100 inside the flange 120.
2b is provided. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102b, and the other end of the exhaust pipe is connected to an intake port of a vacuum exhaust device (not shown) such as a vacuum pump. The exhaust pipe is provided with an on-off valve (not shown) and a pressure control valve, for example, a variable resistance valve (not shown). One end of a gas introduction tube (not shown) is connected to the processing gas source (not shown), and the other end is opened in the discharge tube 11 or the like. The gas introduction pipe is provided with an on-off valve and a gas flow controller (not shown).

Referring to FIG. 3, a plasma post-processing chamber 21 is provided on the top wall of the buffer chamber 100 in an airtight manner. The shape and dimensions of the opening of the plasma heat treatment chamber 21 are substantially the same as those of the opening 101c, and the opening of the plasma post-processing chamber 21 is made substantially coincident with the opening 101c. Buffer room 10
A sample table 22 is provided in a space defined by the inside of the chamber 0 and the inside of the plasma post-processing chamber 21. In this case, the support shaft 23 has the axis of the plasma post-processing chamber 21 substantially as the axis, the upper end of which is projected into the buffer chamber 100, and the lower end of which is projected outside the buffer chamber 100. The airtight inside of the buffer chamber 100 is provided on the bottom wall of the buffer chamber 100.

The sample table 22 has a sample setting surface on its surface. The planar shape and dimensions of the sample stage 22 are determined by the opening 101c.
Therefore, in this case, the shape and size are small. Sample table 22
Is provided substantially horizontally at the upper end of the support shaft 23 with the sample setting surface as the upper surface. The sample setting surface of the sample stage 22 is located below the sample rake tool 52 of the arm 51. The sample table 22 is provided with a sample delivery tool (not shown). In other words, the sample delivery tool is located at a position below the sample setting surface of the sample stage 22 and the sample scooping tool 52 of the arm 51.
It is provided so as to be able to move up and down between a higher position.
A buffer chamber 10 is provided outside the sample stage 22 and the support shaft 23.
Within flange 0, flanges 125, 126 are provided. The inner diameter and the shape of the flanges 125 and 126 are determined by the opening 10.
1c. The flange 125 is provided hermetically on the inner surface of the bottom wall of the buffer chamber 100 about the center of the axis of the plasma post-processing chamber 21, the sample stage 22, and the support shaft 23. The flange 126 is arranged to face the flange 125. A metal bellows 127, which is a telescopic shielding means, is provided across the flanges 125 and 126. An elevating shaft (not shown) has an upper end projecting into the buffer chamber 100 and a lower end projecting out of the buffer chamber 100 so that the buffer chamber 10
It is provided so as to be able to move up and down while maintaining the airtightness within 0. The flange 126 is connected to the upper end of the elevating shaft. The lower end of the elevating shaft is located outside the buffer chamber
Lifting drive means arranged corresponding to the bottom wall of the
It is connected to a cylinder rod of a cylinder (not shown). An airtight seal ring (not shown) is provided on the upper surface of the flange 126 or on the inner surface of the top wall of the buffer chamber 100 facing the surface, that is, on the inner surface of the top wall of the buffer chamber 100 around the opening 101c. An exhaust nozzle 102c is provided on the bottom wall of the buffer chamber 100 inside the flange 125. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102c, and the other end of the exhaust pipe is connected to an intake port of a vacuum exhaust device (not shown) such as a vacuum pump.

In FIG. 3, a sample stage 130 and a lid member 131 are provided with an opening 101d interposed therebetween. Sample table 130
Has a sample setting surface on its surface. The plane shape and dimensions of the sample stage 130 are sufficient to close the opening 101d.
The dimensions. The sample table 130 is provided in the buffer chamber 100 so that the opening 101d can be opened and closed, and in this case, can be moved up and down. In this case, the lifting shaft 132 is
The center of 1d is substantially the axis, and its upper end is the buffer chamber 10
0, and the lower end is projected outside the buffer chamber 100 so that the bottom wall of the buffer chamber 100
It is provided to be able to move up and down while maintaining the airtightness inside. The sample stage 130 has an elevating shaft 132
It is provided substantially horizontally at the upper end of. A lower end of the elevating shaft 132 is connected to an elevating drive unit, such as the cylinder 1, which is disposed outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100.
It is connected to 33 cylinder rods. Sample table 130
Upper surface outer peripheral edge or buffer chamber 10 facing the outer peripheral edge
An airtight seal ring (not shown) is provided on the inner surface of the top wall of the buffer chamber 100 around the opening 101d.
Is provided.

The sample table 130 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample setting surface of the sample stage 130 and a position protruding outward from the opening 101d with the opening 101d closed by the sample stage 130. Have been. The planar shape and dimensions of the lid member 131 are determined by the opening 101d.
Is provided outside the buffer chamber 100 so as to be openable and closable in this case. In this case, the elevating shaft 134 makes the axis of the elevating shaft 132 substantially coincide with the axis of the buffer chamber 100.
It is provided to be able to move up and down freely. The lid member 131 is provided substantially horizontally at the lower end of the elevating shaft 134. Vertical axis 1
The upper end of 34 is a lifting / lowering drive unit, for example, a cylinder 1 disposed outside the buffer chamber 100 and above the lid member 131.
It is connected to 35 cylinder rods. Lid member 131
Outer peripheral edge of the lower surface or the buffer chamber 10 facing the outer peripheral edge
An airtight seal ring (not shown) is provided on the outer surface of the top wall of the buffer chamber 100 around the opening 101d.
Is provided.

2 and 3, a cassette table 140 is provided outside the buffer chamber 100 so as to be able to move up and down corresponding to the longitudinal side surface of the L-shaped long side of the buffer chamber 100. A guide 141 is linearly provided outside the buffer chamber 100 along the widthwise side surface of the L-shaped long side of the buffer chamber 100.
In this case, the end of the guide 141 on the side of the cassette table 140 is extended so as to correspond to the center of the cassette table 140. In this case, the arm 142 is a linear member, and one end of the arm 142 is guided by the guide 141 so as to be reciprocally movable. A sample scooping tool 143 is provided at the other end of the arm 142. The cassette table 140 has an elevating shaft 144 with the cassette installation surface as an upper surface.
It is provided substantially horizontally at the upper end of. The lower end of the elevating shaft 144 is provided to the elevating drive means 145.

In FIGS. 2 and 3, outside the buffer chamber 100,
In this case, a wet processing chamber 31, a drying processing chamber 41, and a sample recovery chamber 150 are provided. In this case, the wet processing chamber 31, the drying processing chamber 41, and the sample recovery chamber 150 are sequentially arranged in series along the side walls of the buffer chamber 100 on the side of the openings 101c and 101d. Of these, the wet processing chamber 31
It is provided at a position closest to the opening 101d.

In FIGS. 2 and 3, a sample stage 32 is provided in the wet processing chamber 31. In this case, the support shaft 33
The upper end is projected into the wet processing chamber 31, and the lower end is projected outside the wet processing chamber 31 so that the airtightness and the watertightness in the wet processing chamber 31 are formed on the bottom wall of the wet processing chamber 31. It is provided rotatably while holding. The lower end of the support shaft 33 is connected to a rotation driving means, for example, a rotation shaft of a motor (not shown). The sample table 32 has a sample setting surface on its surface. The sample table 32 is provided substantially horizontally at the upper end of the support shaft 33 with the sample setting surface as the upper surface. Sample table 3
The sample mounting surface 2 is positioned below the sample rake 62 of the arm 61. The sample table 32 is provided with a sample delivery tool (not shown). That is, the sample delivery device is positioned between the position below the sample setting surface of the sample stage 32 and the arm 61.
Is provided so as to be able to move up and down between a position above the sample scooping tool 52. In the wet processing chamber 31, a processing liquid supply pipe (not shown) is provided so as to be able to supply the processing liquid toward the sample setting surface of the sample stage 32. A processing liquid supply device (not shown) is provided outside the wet processing chamber 31. The processing liquid supply pipe is connected to the processing liquid supply device. A waste liquid discharge pipe (not shown) is connected to the wet processing chamber 31. In this case, an inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the wet processing chamber 31.
Is provided.

In FIG. 2 and FIG. 3, the arm 61 is
0 and the sample table 32, and are provided rotatably. The arm 61 is rotatable in the same plane outside the buffer chamber 100. A sample scooping tool 62 is provided at the rotating end of the arm 61. The planar shape of the sample rake 62 is substantially the same as those of the sample rakes 52 and 82. The arm 61 is provided so that the rotation locus of the center of the sample scooping tool 62 substantially corresponds to the center of each of the sample tables 130 and 32. That is, the arm 61 is set at a position where the approximate center of the sample
Are positioned. In this case, the rotation fulcrum of the arm 61 is located outside the buffer chamber 100 and in the wet processing chamber 3.
It is provided at the upper end of a rotating shaft 63 that is provided rotatably outside of the vehicle. The lower end of the rotating shaft 63 is connected to a rotating drive means, for example, a driving shaft of a motor 64. Arm 6
1. Wet processing chamber 3 corresponding to the rotation area of sample scooping tool 62
An opening 34 is formed in one side wall. Opening 3
The size and position of the arm 4 are set in the arm 6 into the wet processing chamber 31.
1, so that the entry and retreat of the sample scooping tool 62 is not hindered. In this case, the opening 34 can be opened and closed by opening and closing means (not shown).

In FIG. 2 and FIG. 3, a sample table 42 is provided in the drying processing chamber 41. The sample table 42 has a sample setting surface on its surface. The sample table 42 is provided substantially horizontally on the bottom wall of the drying chamber 41 with the sample setting surface as the upper surface. In this case, a heater 43 is used as a heating unit. The heater 43 is provided on the back surface of the sample table 42.
2 is provided so as to be capable of heating. The heater 43 is connected to a power supply (not shown). The sample setting surface of the sample stage 42 is located below the sample scooping tool 72 of the arm 71. The sample table 42 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample setting surface of the sample table 42 and a position above the sample scooping tool 72 of the arm 71. In this case, the sample delivery tool of the sample stage 32 is also the sample stage 3
The arm 71 can move up and down between a position below the sample setting surface and a position above the sample scooping tool 72 of the arm 71. Also,
In this case, an inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the drying processing chamber 41 is provided.

In FIG. 2 and FIG. 3, inside the sample collection chamber 150,
A cassette table 151 is provided. The elevating shaft 152 is
The upper end of the sample collection chamber 150 is protruded into the sample collection chamber 150, and the lower end of the sample collection chamber 150 is protruded outside the sample collection chamber 150.
50 is provided on the bottom wall so as to be able to move up and down. The cassette table 151 is provided substantially horizontally at the upper end of the elevating shaft 152 with the cassette installation surface as the upper surface. The lower end of the elevating shaft 152 is provided to the elevating drive means 153. In this case, an inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the sample recovery chamber 150 is provided.

In FIG. 2, the guide 73 is provided in the wet processing chamber 31,
The drying processing chamber 41 and the sample collecting chamber 150 are provided along inner wall surfaces. The guide 73 has a linear shape.
That is, in this case, the sample tables 32 and 42 and the cassette table 1
A line passing through the center of each of 51 is a straight line, and a guide 73 is provided substantially parallel along the straight line. Arm 71
In this case, is a linear member, one end of which is guided by the guide 73 so as to be reciprocally movable. A sample scooping tool 72 is provided at the other end of the arm 71.
Is provided. 2 and 3, the arm 71 and the sample scooping tool 72 are not hindered from entering and retreating into the wet processing chamber 31, the drying processing chamber 41, and the sample recovery chamber 150. Openings (not shown) are formed in the side walls of each chamber corresponding to the reciprocating range of the tool 72. These openings can be opened and closed by opening and closing means (not shown). The sample collection chamber 150 is provided with an opening and a door (both not shown) for loading and unloading the cassette.

In FIGS. 2 and 3, a cassette 160 is installed on the cassette table 140. In this case, the cassette 160 can store a plurality of samples 170 stacked one by one in the height direction, and one of the side surfaces is opened to take out the samples 170 from the cassette 160. Cassette 1
Reference numeral 60 is installed on the cassette table 140 with the sample taking-out open side face toward the opening 101a. The cassette table 140 on which the cassette 160 is installed is lowered, for example, in this state. The lowering of the cassette table 140 is stopped at a position where the sample 170 stored in the uppermost stage of the cassette 160 can be scooped by the sample scooping tool 143. On the other hand, the openings 101a and 101d are closed by the sample tables 110 and 130, respectively, and in this state, the inside of the buffer chamber 100 is evacuated and evacuated to a predetermined pressure by operating the evacuation device. Thereafter, the lid member 111 is raised, and the lifting is stopped at a position where the sample rake tool 143 having the sample 170 raked does not prevent the sample rake tool 143 from reaching the opening 101a.

In this state, the arm 142 holds the cassette 16
0, and the movement is caused by the sample rake 14
When the position 3 becomes a position corresponding to, for example, the back surface of the sample 170 stored in the lowermost stage of the cassette 160, the cassette 160 is stopped. Thereafter, the cassette 160 is loaded with the sample scooping tool 143.
By raising the cassette table 140 as much as possible, the sample 170 can be scooped. As a result, the sample 170
Is scooped by the sample scooping tool 143 and transferred to the sample scooping tool 143. Sample rake 143 is sample 1
70, the arm 142 is opened.
1a. Such movement of the arm 142 is stopped when the sample rake 143 having the sample 170 reaches a position corresponding to the opening 101a.
In this state, the sample delivery tool of the sample 110 is raised,
As a result, the sample 170 is transferred from the sample scooping tool 143 to the sample delivery tool.

Thereafter, the sample scooping tool 143 holds the sample 17
The arm 142 is retracted to a position where the lowering of the sample delivery tool that has received 0 has not been hindered. Thereafter, the sample delivery tool having the sample is lowered. As a result, the sample 170 is transferred from the sample delivery tool to the sample stage 110 and set on the sample setting surface. Thereafter, the lid member 111 is
Can be lowered. Thus, the opening 101a is also closed by the lid member 111, and communication with the outside is cut off. Thereafter, the sample stage 110 having the sample 170 is lowered, and the sample stage 110 is moved to a position where the sample 170 can be transferred between the sample delivery device of the sample stage 110 and the sample scooping device 82 of the arm 81. Stopped when it reaches.
On the other hand, the flanges 120 and 121 and the metal bellows 122
The sample stage 15 is lowered so as not to hinder the rotation of the arm 81 and the sample scooping tool 82, and the sample 170 is moved between the sample delivery tool and the sample scooping tool 82 of the arm 81.
It is lowered to a position where it can be delivered. In this state,
The sample delivery tool of the sample stage 110 is raised so as to deliver the sample 170 to and from the sample scooping tool 82 of the arm 81.

Thereafter, by rotating the arm 81 toward the sample stage 110, the sample scooping tool 82
Corresponding to the back surface of the sample 170 included in the sample delivery device of the present invention, the sample 170 can be scooped. In this state, the sample delivery device of the sample stage 110 is lowered, whereby the sample 170 is transferred from the sample delivery device of the sample stage 110 to the sample scooping device 82 of the arm 81. The sample scooping tool 82 that has scooped the sample 170 passes between the flange 121 and the inner surface of the top wall of the buffer chamber 100 by rotating the arm 81 in the direction of the sample table 15 and is rotated in the direction of the sample table 15. . The sample stage 110 is raised again, whereby the opening 101a is closed by the sample stage 110. The rotation of the sample scooping tool 82 as described above causes the sample scooping tool 8 to move to a position where the sample 170 can be transferred between the sample scooping tool 82 and the sample delivery tool of the sample stage 15.
It stops when 2 is reached. In this state, the sample stage 15
The sample 170 is transferred from the sample scooping tool 82 to the sample transferring tool on the sample stage 15 by raising the sample delivery tool of the sample table 15.

Thereafter, the sample scooping tool 82 is
Is rotated to a position between the openings 101a and 101b, so that the sample is put on standby in preparation for delivery of the next sample between the sample tables 110 and 15. Then, the flange 121,
The metal bellows 122 is raised, whereby the inside of the buffer chamber 100 inside the metal bellows 122 and the discharge tube 1
The inside of 1 is disconnected from the inside of the buffer chamber 100 outside the metal bellows 122. Further, by lowering the sample delivery tool of the sample table 15 that has received the sample 170,
Numeral 0 is transferred from the sample delivery tool of the sample table 15 to the sample table 15 and is set on the sample setting surface of the sample table 15.

The sample stage 15 on which the sample 170 is set on the sample setting surface is placed on the buffer chamber 100 outside the metal bellows 122.
The space that is cut off from the inside can be raised to a predetermined position. A predetermined processing gas is introduced at a predetermined flow rate from a processing gas source into a space outside the metal bellows 122 and in communication with the inside of the buffer chamber 100. A part of the processing gas introduced into the space is exhausted out of the space by the operation of the vacuum exhaust device and the variable resistance valve. Thereby, the pressure in the space is adjusted to a predetermined etching processing pressure.

On the other hand, from the magnetron 13,
A microwave of 2.45 GHz is oscillated. The oscillated microwave is supplied to the isolator 12c, the power monitor 1
2d, the light propagates through the waveguides 12b and 12a and
To generate a high-frequency electric field including microwaves. At the same time, the solenoid coil 14
By actuating, a magnetic field is generated. The processing gas in the space that is cut off from the inside of the buffer chamber 100 outside the metal bellows 122 is turned into plasma by the synergistic action of the high-frequency electric field including the microwave and the magnetic field. The sample 170 placed on the sample stage 15 is etched using this plasma. Such rotation of the sample scooping tool 52 is performed when the sample scooping tool 52 reaches a position where the sample 170 having been subjected to the etching treatment can be transferred between the sample scooping tool 52 and the sample delivery tool of the sample stage 15. Stopped. In this state, the sample receiving device of the sample stage 15 is lowered, whereby the etched sample 17 is removed.
0 is transferred from the sample receiver of the sample 15 to the sample rake tool 52 of the arm 51.

The sample scooping tool 52, which has scooped the sample 170 after the etching process, mounts the arm 51 on the sample table 2
By rotating in two directions, it passes between the flange 121 and the inner surface of the top wall of the buffer chamber 100 and is rotated in the direction of the sample table 22. A new sample in the cassette 160 is set on the sample table 15 from which the sample 170 after the etching has been removed by performing the above operation. The new sample placed on the sample stage 15 is continuously etched by performing the above operation. On the other hand, before or during the above-described rotation of the sample rake tool 52 having the etched sample 170, the flange 126 and the metal bellows 127 are rotated.
Is lowered so as not to hinder the rotation of the arm 51 and the sample scooping tool 52. At the time of etching the sample 170, the high-frequency power supply 18 is operated, a predetermined high-frequency power is applied to the sample table 15 via the elevating shaft 16, and a predetermined high-frequency bias is applied to the sample 170. The sample 170 is adjusted to a predetermined temperature via the sample table 15.

When the etching of the sample 170 is completed, the operations of the magnetron 13, the solenoid coil 14, the high-frequency power supply 18 and the like are stopped.
The introduction of the processing gas into the space that is interrupted from communicating with the inside of the buffer chamber 100 outside 22 is stopped. After that, after the space is sufficiently evacuated, the on-off valve constituting the decompression / evacuation means for the space is closed. Then, the flange 12
1, the metal bellows 122 is lowered so as not to hinder the rotation of the arm 51 and the sample rake tool 52;
The sample stage 15 is lowered to a position where an etched sample 170 can be delivered between the sample delivery device and the sample rake tool 52 of the arm 51. Then, the sample stage 15
The sample delivery device of (1) is raised so as to be able to deliver the sample 170 having been subjected to the etching process to the sample scooping device 52 of the arm 51. In this state, the sample rake tool 52 rotates between the flange 121 and the inner surface of the top wall of the buffer chamber 100 by rotating the arm 51 in the direction of the sample table 15, and is rotated in the direction of the sample table 15, Further, the sample rake tool 52 having the sample 170 having been subjected to the etching treatment is provided with the arm 5.
By further rotating 1 in the direction of the sample table 22, it passes between the flange 126 and the inner surface of the top wall of the buffer chamber 100 and is further rotated in the direction of the sample table 22. Such rotation of the sample scooping tool 52 is started when the sample scooping tool 52 reaches a position where the etched sample 170 can be transferred between the sample scooping tool 52 and the sample delivery tool of the sample stage 22. Stopped. In this state, the sample receiving device of the sample stage 22 is raised, whereby the etched sample 17 is removed.
0 is transferred from the sample scooping tool 52 to the sample receiving tool on the sample stage 22.

Thereafter, the sample scooping tool 52 is
Is rotated to a position between the opening portions 101c and 101d, thereby to wait at the position. Then, the flange 12
6. The metal bellows 127 is raised, whereby communication between the buffer chamber 100 inside the metal bellows 127 and the inside of the plasma post-processing chamber 21 with the inside of the buffer chamber 100 outside the metal bellows 127 is cut off.

By lowering the sample delivery tool of the sample stage 22 that has received the etched sample 170, the etched sample 170 is transferred from the sample delivery tool of the sample stage 22 to the sample stage 22. It is set on the sample setting surface of the sample stage 22. A post-processing gas is introduced at a predetermined flow rate into a space that is disconnected from the inside of the buffer chamber 100 outside the metal bellows 127, and a part of the post-processing gas is exhausted from the space. Thereby, the pressure in the space becomes
It is adjusted to a predetermined post-treatment pressure. Thereafter, the post-processing gas in the space is turned into plasma by the action of a high-frequency electric field including microwaves in this case. The etched sample 170 placed on the sample stage 22 is post-processed using this plasma. When the post-processing of such an etched sample is completed, the metal bellows 127 is turned off.
The introduction of the post-processing gas into the space that is cut off from the communication with the inside of the external buffer chamber 100 and the conversion of the post-processing gas into plasma are stopped. Then, the flange 126, the metal bellows 127
Is lowered so as not to hinder the rotation of the arm 51 and the sample scooping tool 52. The sample rake tool 52 waiting between the openings 101c and 101d is mounted on the sample stage 22.
Is rotated to a position where the lifting of the post-processed sample 170 by the sample delivery tool is not hindered, and to a position where the sample 170 has passed through the sample table 22. In this state, the sample delivery device of the sample stage 22 is raised, whereby the post-processed sample 170 installed on the sample stage 22 is delivered to the sample delivery device of the sample stage 22.

Thereafter, by rotating the arm 51 in the direction of the sample table 22, the sample scooping tool 52 corresponds to the back surface of the post-processed sample 170 included in the sample delivery tool of the sample table 22. The sample 170 is positioned for scooping.
In this state, the sample delivery tool of the sample stage 22 is lowered,
As a result, the post-processed sample 170 is transferred from the sample delivery tool of the sample stage 22 to the sample scooping tool 52 of the arm 51. The sample scooping tool 52 that has scooped the post-processed sample 170 passes the space between the flange 126 and the inner surface of the top wall of the buffer chamber 100 by rotating the arm 51 in the direction of the sample stage 130, and moves in the direction of the sample stage 130. Is rotated. The sample stage 2 from which the post-processed sample 170 was removed
In 2, a sample that has been subjected to the next etching treatment is installed, and the sample is subsequently processed using plasma.

On the other hand, before or during the above-mentioned rotation of the sample rake tool 52 having the post-processed sample 170, the sample table 130 is moved between the sample transfer tool and the sample rake tool 52 of the arm 51. The processed sample 170 is lowered to a position where it can be delivered. The rotation of the sample rake tool 52 as described above is performed when the sample rake tool 52 reaches a position where the post-processed sample 170 can be transferred between the sample rake tool 52 and the sample delivery tool of the sample stage 130. Stopped at
In this state, the sample receiving device of the sample stage 130 is raised, whereby the post-processed sample 170 is transferred from the sample scooping device 52 to the sample transferring device of the sample stage 130. Thereafter, the sample rake tool 52 connects the arm 51 to the opening 101.
By rotating the sample to the position between b and 101c, the next sample subjected to the etching processing is transported to the sample stage 22 to be stopped at the position.

After that, the sample table 22 from which the post-processed sample 170 has been removed is placed with the next sample subjected to the etching process, and the sample is continuously post-processed using plasma. On the other hand, the sample delivery device of the sample stage 130 that has received the post-processed sample 170 is lowered. This allows
The post-processed sample 170 is transferred from the sample delivery tool of the sample stage 130 to the sample stage 130 and set on the sample setting surface. Thereafter, the sample stage 13 having the post-processed sample 170 is provided.
0 is raised, so that the opening 101d is
It is airtightly closed by the sample stage 130. In this state, the lid member 131 is raised. The rise of the lid member 131 does not hinder the elevation of the sample delivery device of the sample stage 130, and the sample scooping device 62 of the arm 61 moves the sample 170 that has been post-processed with the sample delivery device of the sample stage 130. It stops when the lid member 131 rises to a position where it does not hinder reaching the receivable position.

In this state, first, the sample delivery tool of the sample stage 130 is raised. As a result, the post-processed sample 170 is transferred from the sample stage 130 to the sample delivery tool of the sample stage 130. Thereafter, the sample rake 62 is moved to the arm 6.
The sample stage 1 is rotated in the direction of the sample stage 130 so that the sample stage 1 is rotated.
It is rotated toward 30. Such rotation of the sample scooping tool 62 has a position at which the post-processed sample 170 can be transferred between the sample scooping tool 62 and the sample delivery tool of the sample stage 130, that is, the sample delivery tool of the sample stage 130 has When the sample scooping tool 62 reaches a position corresponding to the back surface of the post-processed sample 170, the sample scooping is stopped. Then, the sample stage 13
The sample delivery device of 0 is lowered. As a result, the post-processed sample 170 is transferred from the sample delivery tool on the sample stage 130 to the sample scooping tool 62.

The sample scooping tool 62 that has scooped the post-processed sample 170 rotates the arm 61 in the direction of the wet processing chamber 31, thereby rotating the sample table 32 in the wet processing chamber 31.
Pivoted toward On the other hand, the sample delivery tool of the sample stage 130 that has passed the post-processed sample 170 to the sample scooping tool 62 is further lowered to a position below the sample installation surface of the sample stage 130. Thereafter, the lid member 131 is lowered. As a result, the opening 101d is
It is closed airtightly. In this state, the sample stage 13
0 is lowered again, and the lowered sample stage 13
At 0, the next post-processed sample is passed and installed.
On the other hand, the sample rake 6 having the post-processed sample 170
The rotation of 2 is stopped when the sample scooping tool 62 reaches a position where the post-processed sample 170 can be transferred between the sample scooping tool 62 and the sample delivery tool of the sample stage 32. In this state, the sample delivery tool of the sample stage 32 is raised. Thereby, the post-processed sample 170 is used as the sample rake tool 62.
From the sample delivery tool of the sample table 32. The sample scooping tool 62 having passed the post-processed sample 170 is retracted outside the wet processing chamber 31 in preparation for receiving the next post-processed sample. Thereafter, the opening 34 is closed.

On the other hand, the sample delivery tool of the sample stage 32 which has received the post-processed sample 170 is lowered. As a result, the post-processed sample 170 is transferred from the sample delivery tool of the sample stage 32 to the sample stage 32 and set on the sample setting surface. Thereafter, the processing liquid is supplied from the processing liquid supply device via the processing liquid supply pipe at a predetermined flow rate toward the surface of the post-processed sample 170 placed on the sample stage 32. At the same time, the post-processed sample 170 is rotated by the operation of the motor. By such an operation, wet processing of the post-processed sample 170 is performed.

Incidentally, for example, nitrogen gas is introduced into the wet processing chamber 31 by an inert gas introducing means, whereby the wet processing is performed in a nitrogen gas atmosphere. Also,
The waste liquid generated by the wet processing is discharged out of the wet processing chamber 31 through a waste liquid discharge pipe. When such wet processing ends, supply of the processing liquid, rotation of the sample 170, and the like are stopped. Thereafter, the sample delivery tool of the sample stage 32 is raised. The wet-processed sample 170 is transferred from the sample table 32 to the sample delivery tool during the ascent. The lifting of the sample delivery device of the sample stage 32 that has received the wet-processed sample 170 is stopped when the wet-processed sample 170 reaches a position where the wet-processed sample 170 can be transferred to and from the sample scooping tool 72. In this state, the sample scooping tool 72 is moved toward the sample table 32 via the arm 71. The movement is stopped when the sample scooping tool 72 reaches a position where the wet-processed sample 170 can be transferred between the sample scooping tool 72 and the sample delivery tool of the sample stage 32. Then, the sample table 32
Is lowered. Thus, the wet-processed sample 170 is transferred to the sample scooping tool 72.
The sample stage 32 from which the wet-processed sample 170 was removed was used.
Is prepared for receiving the next post-processed sample. The sample scooping tool 72 having the wet-processed sample 170 is further moved from the wet processing chamber 31 to the drying processing chamber 41 through the opening toward the sample table 42 via the arm 71. The movement is performed by the sample scooping tool 72 and the sample table 4.
The sample scooping tool 72 is stopped when the sample scooping tool 72 reaches a position where the wet-processed sample 170 can be transferred to and from the second sample transferring tool. Thereafter, the sample delivery tool of the sample table 42 is raised. Thus, the wet-processed sample 170 is transferred to the sample delivery tool on the sample stage 42. The sample scooping tool 72 from which the wet-processed sample 170 has been removed is once retracted. The sample delivery tool on the sample stage 42 is lowered.

Thus, the wet-processed sample 170 is obtained.
Is transferred from the sample delivery tool of the sample stage 42 to the sample stage 42 and is set on the sample setting surface. The sample stage 42 has a heater 4
The sample 170 that has been heated by the heat generated by energization of the sample 3 and has been wet-processed is heated via the sample stage 42. The temperature of the wet-processed sample 170 is adjusted to a predetermined temperature by adjusting the amount of electricity supplied to the heater 43. Thus, the wet-processed sample 170 is dried. Note that, for example, a nitrogen gas is introduced into the drying processing chamber 41 by an inert gas introducing unit, whereby the drying processing is performed in a nitrogen gas atmosphere. When such a drying process is completed, the sample delivery tool on the sample stage 42 is raised. The dried sample 170 is transferred from the sample table 42 to the sample delivery tool during the ascent. The lifting of the sample delivery tool on the sample stage 42 that has received the dried sample 170 is stopped when the sample delivery tool 72 reaches a position where the dried sample 170 can be transferred to and from the sample scooping tool 72. In this state, the sample scooping tool 72 is moved again to the sample table 42 via the arm 72. The movement is performed by the sample scooping tool 72.
Between the sample and the sample delivery device of the sample stage 42
170 is stopped when the sample scooping tool 72 reaches a position where it can be delivered. Thereafter, the sample delivery tool of the sample stage 42 is lowered. As a result, the dried sample 17
0 is passed to the sample scooping tool 72. The sample delivery tool of the sample stage 42 from which the dried sample 170 has been removed is:
In preparation for receiving the next wet processed sample. The sample scooping tool 72 having the dried sample 170 is further moved from the drying processing chamber 41 to the sample collecting chamber 150 through the opening toward the cassette table 151 via the arm 71. The movement is performed by the sample scooping tool 72 and the cassette table 15.
The sample scooping tool 72 is stopped when the sample scooping tool 72 reaches a position where the sample 170 having been subjected to the drying treatment can be transferred to and from the cassette 161 installed in the sample scavenger 72.

The cassette 161 has, for example, a plurality of storage grooves formed in the height direction.
Numeral 61 is positioned so as to be able to receive a sample in the uppermost groove. In this state, the cassette 161 is lowered intermittently by a predetermined amount. Thus, the dried sample 1
70 is supported by the uppermost groove of the cassette 161 and collected and stored in the cassette 161. The sample collection chamber 15
For example, nitrogen gas is introduced into the sample 170 by an inert gas introduction unit, and thereby, the dried sample 170
Is stored in a cassette 161 in a nitrogen gas atmosphere, and is carried and stored in the sample collection chamber 150. The collection of the dried samples in the cassette 161 is sequentially performed, and the cassette 161 is carried out of the sample collection chamber 150 when the collection is completed. The sample carried out of the sample collection chamber 150 while being stored in the cassette 161 is carried to the next step.

As a sample, an Si substrate 1 as shown in FIG.
A silicon oxide film 172 having a thickness of 3000 ° is formed on the substrate 71, and a TiW layer 173 and an Al—Cu—Si film 17 are formed thereon.
4 was formed, and a sample using the photoresist 175 as a mask was used. The sample was processed using the apparatus shown in FIGS.

As etching conditions, the processing gas type B
Cl ₃ + Cl ₂ , processing gas flow rate 150 sccm, processing pressure 16
mTorr, microwave output 600W, RF bias 60W
Condition was selected.

After the etching process, a process in which all of the subsequent processes are passed without any process (A), a process in which a plasma post-process is performed after the etching process, and a process in which the subsequent wet process is omitted from the drying process (B) ) And those subjected to a predetermined treatment in all steps (D), and those subjected to a wet treatment and a drying treatment without the plasma post-treatment after the etching treatment (C)
So, I compared the effect on corrosion prevention.

The processing conditions in the plasma post-processing chamber are as follows: processing gas type O ₂ + CF ₄ , processing gas flow rate 400 sccm
(O ₂ ), 35 sccm (CF ₄ ), processing pressure of 1.5 Torr, and plasma was generated using a microwave of 2.45 GHz. In this case, the purpose of the plasma post-treatment is mainly to ash the photoresist and to remove the chloride remaining on the pattern side wall protective film and the bottom of the pattern. Was added. In the wet process, a 1-minute spinning-washing process with pure water and a 30-second spinning-drying process were performed. Further, the sample table is moved by a heater in a nitrogen gas atmosphere for 15 minutes.
The sample was heated to 0 ° C., and the wet-processed sample was left on the sample for 1 minute to perform a drying process.

As a result, after performing an etching process and performing a plasma post-processing, a wet process, that is, a process in which the washing process and the drying process were omitted was observed using an optical microscope. Rashikin spots were observed. Then, when this was further observed in detail using SEM, as shown in FIG. 5, the TiW layer and the Al-C
From the boundary of the u-Si layer as a starting point, a product 180 due to fan-shaped corrosion was observed. Therefore, as plasma post-treatment conditions, the mixing ratio of CF _{4 to} O ₂ was 5 to 20%, the treatment pressure was 0.6 to 2 Torr, and the sample temperature was raised to 250 ° C. during the treatment. In each case, the same corrosion was observed within several hours after the treatment.

The above-mentioned corrosion is not observed in the Al-Si single-layer wiring film. That is, from this, it is considered that corrosion is generated and accelerated by the so-called battery contact in the laminated wiring of dissimilar metals having different ionization tendencies.

In order to sufficiently prevent the occurrence of such corrosion, it has been found that it is necessary to thoroughly remove even a slight chlorine component which cannot be completely removed by the plasma post-treatment after the etching treatment.

Thus, as described above, the treatment was performed under various conditions, and the time until corrosion occurred after the treatment was examined. The result shown in FIG. 6 was obtained.

As is clear from FIG. 6, with respect to a wiring material which is highly corroded, such as a laminated wiring, after the etching process, a plasma post-treatment such as resist ashing, or after the etching process, a plasma post-treatment such as a resist ashing. Without processing
The anti-corrosion effect is not sufficient in the case where the water washing and the drying are performed, and by performing the plasma post-treatment such as the etching and the resist ashing, the water-washing and the drying in a consistent manner, the first time of 30 hours or more is obtained. An anticorrosion effect is obtained.

In addition to the above, a similar effect can be obtained by treating with hydrofluoric nitric acid before the water washing process for the purpose of removing the residue after etching. Further, after the etching process, after performing the plasma ashing process, in order to remove the pattern side wall protective film that cannot be completely removed by the process, the process is performed with a weak alkaline solution or a weak acidic solution (for example, acetic acid), and then a water washing process. By performing the drying treatment, the chlorine component can be more completely removed, and the anticorrosion effect can be further improved.

In the above embodiment, the etching process →
Plasma post-treatment → wet treatment → drying treatment, but etching treatment → wet treatment → drying treatment → plasma post-treatment may also be used. In this case, in the wet processing, for example, preliminary removal of a residue or the like after etching and removal of the resist are performed. In addition, for example, preliminary removal of a residue or the like after etching is performed. In such a case, in the plasma post-processing, for example, removal of a residual residue or the like is performed, and, for example, removal of the residual residue or the like and removal of the resist are performed.

Further, in the above-described embodiment, the time required to complete the wet processing of the plasma-treated sample is, for example, about 1 hour as shown in FIG. Therefore, it is limited to the time at the longest. However, it is desirable to complete the wet processing within as short a time as possible. That is, it is desirable that the sample after the plasma post-processing is immediately conveyed from the plasma post-processing apparatus to the wet processing apparatus to perform the wet processing. In the above-described embodiment, the plasma-post-treated sample is transported in the air. Alternatively, the sample may be transported under vacuum or in an inert gas atmosphere. The transfer in such an atmosphere is extremely effective when the time from the plasma post-treatment to the start of the wet treatment is longer than, for example, the time of occurrence of corrosion in the atmosphere. In such a case, a means may be provided between the plasma post-processing apparatus and the wet processing apparatus for temporarily storing the plasma-post-processed sample under a vacuum or an inert gas atmosphere.

[0073]

In FIG . 1, a sample (not shown) that has been subjected to the etching and plasma post-processing is carried into a wet processing chamber (not shown) of the wet processing apparatus 30 by the sample transfer means 60, and the wet processing in the wet processing chamber is performed. It is installed on a sample mounting surface of a sample stage (not shown) which is a station. The plasma-post-processed sample placed on the sample stage in the wet processing chamber is subjected to, for example, a phenomenon liquid treatment (TMAH). By such a wet process, residues after etching are sufficiently removed.
At the same time, if the sample has Al as a component as shown in FIG. 4, for example, the Al is also partially dissolved. When such a sample is subsequently subjected to a drying treatment and taken out into the atmosphere, for example, oxidation, which is a form of corrosion, occurs, which is inconvenient. Therefore, the sample that has been TMAH-dried in the drying processing chamber of the drying processing apparatus 40 is carried into the passivation processing chamber of the passivation processing apparatus 190 by the sample transfer means 90, and is processed in the processing station in the passivation processing chamber. Is set on a sample setting surface of a sample stage (not shown).
On the other hand, in the passivation processing chamber, a gas plasma for passivation processing, in this case, oxygen gas plasma is generated or transferred. The dried sample placed on the sample stage in the passivation chamber is passivated by the oxygen gas plasma. The passivated sample is transported from the passivation chamber to the collection cassette by the sample transport means 200, and is collected and stored.

According to the above embodiment, a sample having a laminated structure of metals having different ionization tendencies is etched through a resist mask formed on the laminated structure, and thereafter, the resist is removed by plasma post-processing. And further passivated under reduced pressure. During this time, the sample is kept in a vacuum atmosphere without being exposed to the atmosphere. Further, the pattern side wall protective film deposited on the side wall surface of the laminated structure by the etching process is removed with ashing off photoresists by plasma treatment. At that time, corrosive products also do we divided etched treated samples. Thereafter, the sample is passivated on its surface without being exposed to the atmosphere. Therefore, before the passivation treatment, an oxide layer due to air is not formed on the sample surface having the side wall surface of the laminated structure. Even if the sample thus treated is taken out to the atmosphere, corrosion of the wiring film or the like due to electrolytic corrosion is suppressed, and the corrosion can be sufficiently prevented.

[0076]

According to the present invention, the ionization tendency is different.
A sample with a metal laminated structure is passed through a resist mask.
And then the resist is removed,
Further, passivation treatment is performed under reduced pressure. During this time, the sample
It is kept in a vacuum atmosphere without being exposed to the atmosphere
Before the passivation treatment, the sample including the sidewall surface of the laminated structure
No oxide layer is formed on the surface by air. Obedience
Therefore, the sample subjected to the etching treatment according to the present invention is used in a vacuum atmosphere.
Laminated structure of metal that is anticorrosive in the atmosphere and has a different ionization tendency
Despite having the structure, even when taken out to the atmosphere
Corrosion of the wiring film etc. due to
Can be stopped.

[Brief description of the drawings]

FIG. 1 is a block diagram of a sample processing apparatus according to an embodiment of the present invention.

FIG. 2 is a specific detailed plan sectional view of the apparatus of FIG. 1;

FIG. 3 is a longitudinal sectional view of the apparatus of FIG. 2;

FIG. 4 is a longitudinal sectional view showing an example of a sample.

FIG. 5 is a perspective external view showing an example of occurrence of corrosion.

FIG. 6 is a diagram illustrating a relationship between a processing mode after an etching process and a time until corrosion occurs.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/302 N (72) Inventor Ryoji Fukuyama 502 Kandate-cho, Tsuchiura-shi, Ibaraki Pref. Hitachi, Ltd. Mechanical Laboratory (72) Invention Person Kazuo Nojiri 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Inside the Musashi Factory, Hitachi, Ltd. (56) References JP-A-61-191034 (JP, A) JP-A-57-1585 (JP, A) JP-A-60-5528 (JP, A) JP-A-58-3983 (JP, A) JP-A-60-262955 (JP, A)

Claims (5)

(57) [Claims] 1. A step of plasma-etching a sample having a stack of metals having different ionization tendencies through a resist mask formed on the stack, and removing the resist mask of the processed sample by plasma. After
A post-etching process from the post-processed sample.
Removing the residue, the removed specimen of residue gas
Sample processing wherein the this <br/> and a step of passivating using plasma. 2. A step of plasma-etching a sample having a stack of metals having different ionization tendencies through a resist mask formed on the stack, and removing the resist mask of the processed sample by plasma. A post-processing step, a wet processing step of wet-processing the post-processed sample, a drying processing step of drying the wet-processed sample, and passivating the dried sample using gas plasma. sample processing method of the passivation treatment step of treating said and chromatic child. 3. claimed in sample processing method of claim 1, wherein the sample processing method, characterized in that the passivating utilizing oxygen Gasuburazuma the sample. 4. A means for plasma-etching a sample having a stack of metals having different ionization tendencies through a resist mask formed on the stack, and removing the resist mask of the processed sample by plasma. A post-processing means for performing the post- etching process on the post- processed sample.
And means for removing the residue, the removed specimen of residue Gasupu
Sample processing apparatus characterized by having a passivation treatment means using a plasma processing passivated. 5. A processing means for plasma-etching a sample having a stack of metals having different ionization tendencies from each other via a resist mask formed on the stack.
The resist mask of the sample processed by the processing means is plasmed.
A post-processing means for removing the processed sample in the post-processing means, a wet processing means for wet-processing the sample processed in the post-processing means, a drying means for drying the processed sample in the wet processing means, A sample processing apparatus , comprising: passivation processing means for performing passivation processing using gas plasma .