JPH05217966A - Method and device for processing sample - Google Patents

Abstract

PURPOSE:To prevent corrosion of a sample after etching any kind of samples and also to enhance throughput of a process without damaging anticorrosive effectiveness by a method wherein a corrosive matter produced by the etching process of the sample is sufficiently removed. CONSTITUTION:In a sample processor provided with a processor for etching a sample, a plasma postprocessor for ashing the etched sample, a wet processor for removing corrosive matter remaining on the surface of the ashed sample, and a dry processor for drying the wetted sample, a plurality of sample pedestals 32a, 32b are provided in a wet process chamber 31 of a wet processor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample processing technique,
In particular, the present invention relates to a sample processing method and apparatus suitable for processing a sample such as a semiconductor substrate.

[0002]

2. Description of the Related Art A sample such as a semiconductor substrate is subjected to wet etching treatment using a chemical solution or dry etching treatment using plasma or the like. In such a sample etching process, it is necessary to pay sufficient attention to corrosion of the sample after the etching process.

As a technique for preventing corrosion of a sample after such etching treatment, there is a conventional technique, for example, Japanese Patent Laid-Open No. 59-186326.
Chlorine compound which is a corrosive substance remaining in the resist film after ashing (ashing) the resist film in a plasma processing chamber connected to the etching chamber while maintaining a vacuum with the etching chamber as described in Japanese Patent Publication No. It is known to remove.

Further, in the above-mentioned document, by setting the temperature of the sample after the etching treatment to 200 ° C. or higher, the vaporization of the chlorine compound which is the corrosive substance that remains is promoted, and thereby the sample after the etching treatment is evaporated. It is possible to prevent corrosion.

Further, as described in, for example, Japanese Patent Application Laid-Open No. 61-133388, an object to be processed, which is a sample after etching, is taken out from the etching processing chamber and conveyed to a heat treatment chamber where heated air is treated. It is known that the object to be treated is sprayed and dried, and then the object to be processed is taken out of the heat treatment room, washed with water and dried to prevent corrosion of the object to be processed after etching treatment due to reaction with the atmosphere. There is.

[0006] These conventional techniques, that is, a technique of ashing a sample after etching using plasma, a technique of heating the sample after etching to a temperature that promotes vaporization of the residual corrosive substance, The technique in which the sample after the etching treatment is dried and then washed with water and dried has a problem that a sufficient anticorrosive effect cannot be obtained depending on the type of the sample.

For example, it is considered that the above-mentioned conventional technique is effective in preventing corrosion after the etching process when the wiring film formed on the semiconductor substrate is a single metal film such as aluminum (Al). However, the wiring film is a metal with different ionization tendency,
For example, in the case of an Al-copper (Cu) alloy film or a laminated film of the alloy and a refractory metal (or its silicide), the anticorrosion effect after etching is not sufficient.

In other words, the wiring on the semiconductor substrate is becoming finer and finer with the recent remarkable progress in high integration. Therefore, in order to prevent disconnection due to electromigration or stress migration, a conventional Al- Cu content of several percent from silicon (Si) film
In consideration of the following Al-Cu-Si alloy film and the purpose of reducing the contact resistance in addition to this, Al-Cu-S
A laminated film of an i alloy and a refractory metal (or its silicide), such as titanium / tungsten (TiW), titanium nitride (TiN), or molybdenum / silicon (MoSi), has been used.

In the case of such a wiring film structure, Cu, W,
Since metal such as Ti and Mo and ionization tendency of Al are different, a kind of battery action works by using water as a medium, the corrosion of the wiring film is accelerated by so-called electrolytic corrosion, and the corrosive substance generated by the etching treatment is heated to 200 ° C or more. Even if the sample is removed by ashing using plasma at a high temperature, corrosion will occur due to slightly remaining corrosive ions within tens of minutes to several hours after the sample is taken out into the atmosphere.

As a countermeasure, Japanese Patent Laid-Open No. 2-224233
In a sample processing apparatus as described in Japanese Patent Publication No. JP-A-2003-242, means for processing a sample, means for post-processing a sample processed by the processing means using plasma, and processing for the plasma post-processing means By providing a means for wet-treating the sample and a means for drying the sample treated by the wet-treatment means, it is possible to sufficiently prevent the corrosion of the sample after the etching treatment regardless of the type of the sample. Has been proposed.

[0011]

However, in the sample processing apparatus described in the above-mentioned Japanese Patent Application Laid-Open No. 2-224233, there is only one means for wet-processing the sample processed by the plasma post-processing means, and therefore the throughput is improved. However, there is a problem that the throughput is reduced although the anticorrosion effect is improved by increasing the processing time.

Therefore, an object of the present invention is to provide a technique capable of sufficiently preventing corrosion of a sample after etching regardless of the type of the sample.

Another object of the present invention is to provide a technique capable of improving processing throughput without impairing the anticorrosion effect.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0015]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

The sample processing apparatus according to the present invention comprises means for processing the sample, means for plasma post-processing the sample processed by the processing means under reduced pressure, and wet processing of the sample processed by the plasma post-processing means. It is characterized in that it is provided with a means for treating and a means for subjecting the sample treated by the wet treating means to a drying treatment, and a plurality of means for treating the sample treated by the plasma post-treatment means with a wet treatment.

[0017]

According to the above means, the step of processing the sample,
Among the series of steps including the step of plasma post-treating the treated sample under reduced pressure, the step of wet-treating the post-treated sample, and the step of dry-treating the wet-treated sample, a reduction in processing throughput is caused. By providing a plurality of wet processing means in the wet processing step, it is possible to sufficiently prevent the corrosion of the sample after the etching processing regardless of the type of the sample without causing a decrease in the throughput of the processing.

[0018]

[Embodiment 1] A sample processing method and apparatus according to an embodiment of the present invention will be described below with reference to FIGS.

In FIG. 1, a sample processing apparatus includes a processing apparatus 10 for etching a sample and a plasma post-processing apparatus 2.
0, a wet processing device 30 and a dry processing device 40, and a sample transfer means 5 for transferring a sample between the processing devices.
It has at least 0, 60, 70.

In FIG. 1, as a processing apparatus 10, an apparatus for processing a sample under reduced pressure using plasma, for example, etching processing is used. The plasma etching apparatus includes a plasma etching apparatus, a reactive sputter etching apparatus, a non-magnetic field type microwave plasma etching apparatus, a magnetic field type microwave plasma etching apparatus, and an electron cyclotron resonance (ECR) type microwave plasma. An etching device, a photo-excited plasma etching device, a neutral particle etching device, etc. are adopted.

In addition to these, as the processing apparatus 10, it is possible to employ an apparatus for wet etching a sample, an apparatus for etching using a corrosive gas, and the like.

In FIG. 1, a plasma post-treatment device 20 is a device for performing post-treatment, for example, ashing treatment, on a sample processed by the treatment device 10 under reduced pressure by using plasma. As the ashing processing apparatus, a plasma ashing apparatus, a non-magnetic field type microwave plasma ashing apparatus, a magnetic field type microwave plasma ashing apparatus, an ECR type microwave plasma ashing apparatus, a photoexcited plasma ashing apparatus, etc. are adopted. ..

In FIG. 1, as the wet processing apparatus 30, an apparatus for wet processing the sample processed by the plasma post-processing apparatus 20, for example, a spinning wet processing apparatus is used. In the spinning wet processing apparatus, the plasma post-processed sample is subjected to, for example, a spin cleaning treatment with water, or sequentially subjected to a spin cleaning treatment with a chemical solution and water.

In this case, the chemical solution is appropriately selected depending on the substance to be removed from the post-processed sample. Further, as the processing atmosphere, an inert gas atmosphere such as nitrogen gas or an air atmosphere is adopted. In addition, after the wet treatment, a drying treatment such as draining may be performed in this state.

In FIG. 1, a drying treatment device 40 is a device for drying the treated sample in the wet treatment device 30, for example, a device for heating and drying treatment of the wet treatment sample or a wet treatment sample. A device for spraying gas and performing a drying process is used.

As the processing atmosphere, a nitrogen gas atmosphere or an air atmosphere is adopted.

In FIG. 1, the sample transfer means 50 has a function of transferring a processed sample between a processing station (not shown) of the processing apparatus 10 and a processing station (not shown) of the plasma post-processing apparatus 20. Sample transfer means 6
0 has a function of transporting the post-processed sample between the processing station of the plasma post-processing apparatus 20 and the processing station (not shown) of the wet processing apparatus 30. The sample transfer means 70 has a function of transferring the wet-processed sample between the processing station of the wet processing apparatus 30 and the processing station (not shown) of the drying processing apparatus 40.

The sample transfer means 50 can deliver the sample to and from the stations of the processing apparatus 10 and the plasma post-processing apparatus 20. The sample transfer means 60 can deliver the sample to and from the stations of the plasma post-treatment device 20 and the wet treatment device 30. Sample transfer means 70
Can transfer the sample to and from each station of the wet processing device 30 and the dry processing device 40.

The sample transfer means 50, 60 and 70 include
Known conveying means, for example, a sample scooping tool for scooping and holding a sample from its back surface on an arm that is mechanically, electrically or magnetically rotated or reciprocally moved, a sample gripping tool for gripping and holding the sample at its outer peripheral edge, , An arm transfer device provided with a sample adsorption tool for adsorbing a sample, for example, electromagnetic adsorption or vacuum adsorption, a belt transfer device in which an endless belt is wound around a driving roller and a driven roller, and a sample is ejected by a gas blowing force. A transporting device or the like is adopted.

When the processing apparatus 10 is an apparatus for processing a sample under reduced pressure using plasma, the sample transfer means 50 is provided so that the processed sample can be transferred in a reduced pressure space without exposing it to the atmosphere. There is.

In FIG. 1, in this case, the sample carrying means 80 for carrying the sample processed by the processing apparatus 10 to the processing apparatus 10 and the sample dried by the drying processing apparatus 40 are collected, for example, in a cassette (for illustration). And a sample transporting means 90 for transporting the sample (to be omitted). Sample transfer means 80, 90
As the sample transfer means 50, 60, the same one is adopted.

In FIG. 1, when the processing apparatus 10 is, for example, an apparatus for processing a sample under reduced pressure using plasma, the sample processing atmosphere of the processing apparatus 10 and the sample processed by the processing apparatus 10 are the processing apparatus 10. The space to be transported to and the space to which the processed sample is transported can be connected to and disconnected from each other.

Further, the sample post-treatment atmosphere of the plasma post-treatment device 20, the space for transporting the processed sample, and the space for transporting the post-processed sample can be connected and disconnected.

A space in which the post-processed sample is transported,
The sample wet processing atmosphere of the wet processing apparatus 30, the space in which the wet processed sample is transported, the sample drying processing atmosphere in the drying processing apparatus 40, and the space in which the dried processed sample are transported are
Each may be capable of communication and interruption.

In FIG. 1, a processing station is provided in the sample processing atmosphere of the processing apparatus 10. When the processing apparatus 10 is, for example, an apparatus that processes a sample under reduced pressure using plasma, the processing station is a sample table (not shown).

Plasma aftertreatment device 20, wet treatment device 3
A sample stage (not shown) is provided as a processing station in each of the processing atmospheres of 0 and the drying processing apparatus 40.

One or a plurality of samples can be set on each sample table. In the processing apparatus 10 and the plasma post-processing apparatus 20, each sample stage may be used as one of the constituent elements forming the sample processing atmosphere.

The wet processing apparatus 30 is provided with a plurality of sample stands, each of which can perform parallel processing or serial processing. Supply of chemicals used for wet processing is carried out with acid, alkali,
It has an introduction nozzle that is distinguished by pure water, and can control the temperature of each chemical from room temperature to 100 ° C. The treatment waste liquid can be switched between acid treatment, alkali treatment, and water treatment. The processing sequence, that is, the flow rate of the chemical solution, the dropping time, the rotation amount of the spinner, etc. can be freely programmed.

The above sample processing apparatus will be described more specifically and in detail with reference to FIGS. 2 and 3. In this case, as the processing apparatus in FIGS. 2 and 3, in this case, an apparatus for processing the sample under reduced pressure using plasma is used.

On the top wall of the buffer chamber 100, in this case,
Four openings 101a to 101d are formed. An exhaust nozzle 102a is provided on the bottom wall of the buffer chamber 100. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102a, and the other end of the exhaust pipe is connected to an intake port of a decompression exhaust device (not shown) such as a vacuum pump.

The plan shape of the buffer chamber 100 is substantially L-shaped. The buffer chamber 100 is in this case made of stainless steel. When the buffer chamber 100 is seen in a plan view, the openings 10 are arranged in order from the long side end of the L-shape toward the short side.
1a to 101c are formed, and the opening 101d is formed on the short side of the L shape. The openings 101a to 101d are
It has a predetermined distance from the adjacent openings.

An arm 81 is rotatably provided in the buffer chamber 100. The arm 81 is used for the buffer chamber 10.
It is possible to rotate in the same plane within 0. Arm 81
A sample scooping tool 82 is provided at the rotating end of the. The plane shape of the sample scooping tool 82 is a substantially U-shape.

The arm 81 is provided so that the rotation locus of the approximate center of the sample scooping tool 82 substantially corresponds to the central portions of the openings 101a and 101b. That is, the rotation fulcrum of the arm 81 is located at a position where the approximate center of the sample scooping tool 82 draws the above-described rotation trajectory.

At the position of the rotation fulcrum of the arm 81, the upper end portion is projected into the buffer chamber 100, and the lower end portion is projected outside the buffer chamber 100, so that the buffer chamber 100 is rotated.
It is provided at the upper end of a rotating shaft 83 that is rotatably provided on the bottom wall of the buffer chamber 100 while keeping the inside of the buffer chamber 100 airtight. The lower end of the rotating shaft 83 is connected to a rotating drive means (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall inside the buffer chamber 100.

An arm 51 is provided in the buffer chamber 100 so as to be rotatable in the buffer chamber 100 at a position different from that of the arm 81. The arm 51 can rotate in the same plane in the buffer chamber 100, and in this case, in the same plane as the rotation plane of the arm 81.

At the rotating end of the arm 51, the sample scooping tool 5
Two are provided. The plane shape of the sample scooping tool 52 is
It is substantially the same as that of the sample scooping tool 82. Arm 51
Indicates that the rotation trajectory of the sample scooping tool 52 at the substantially center is the opening 10.
It is provided so as to substantially correspond to the respective central portions of 1b to 101d. That is, the rotation fulcrum of the arm 51 is positioned at a position where the approximate center of the sample scooping tool 52 draws the above-described rotation trajectory.

At the rotation fulcrum of the arm 51, the upper end is projected into the buffer chamber 100 and the lower end is projected outside the buffer chamber 100 at that position.
It is provided at the upper end of a rotating shaft 53 that is rotatably provided on the bottom wall of the buffer chamber 100 while keeping the inside of the buffer chamber 100 airtight. The lower end of the rotary shaft 53 is connected to a rotary drive means, for example, a drive shaft of a motor 54, which is arranged outside the buffer chamber 100 so as to correspond to the bottom wall inside the buffer chamber 100.

In FIG. 3, the sample table 110 and the lid member 11
1 is provided so as to sandwich the opening 101a. Sample stand 1
10 has a sample mounting surface on its surface. Sample table 110
The planar shape and dimensions of are the shapes and dimensions sufficient to close the opening 101a. The sample table 110 is provided in the buffer chamber 100 such that the opening 101a can be opened and closed, and in this case, can be moved up and down.

In this case, the lifting shaft 112 has the opening 101.
The center of a is substantially the axial center, and the upper end of the buffer chamber 100
The lower end of the buffer chamber 100 is projected to the inside of the buffer chamber 100, and the lower end of the buffer chamber 100 is projected to the outside of the buffer chamber 100.
It is rotatably provided while maintaining the airtightness inside.

The sample table 110 is provided substantially horizontally on the upper end of the elevating shaft 112 with the sample installation surface as the upper surface. The lower end of the elevating shaft 112 has an elevating and lowering driving means arranged outside the buffer chamber 100 and corresponding to a bottom wall in the buffer chamber 100.
For example, it is connected to the cylinder rod of the cylinder 113. The outer peripheral edge of the upper surface of the sample table 110, or the inner surface of the top wall of the buffer chamber 100 facing the outer peripheral edge, that is, the opening 101a.
An airtight seal ring (not shown) is provided on the inner surface of the top wall of the buffer chamber 100 around the.

The sample table 110 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided at a position below the sample installation surface of the sample table 110 and at the opening 101a.
Is provided so as to be able to move up and down between the position and the position projecting outward from the opening 101a in a state in which is closed by the sample table 110.

The planar shape and dimensions of the lid member 111 are sufficient for closing the opening 101a. Lid member 11
1 is provided outside the buffer chamber 100 so that the opening 101a can be opened, and in this case, can be moved up and down. Lifting axis 1
In this case, 14 is provided outside the buffer chamber 100 so as to be able to move up and down with the axis of the elevating shaft 112 substantially aligned with the axis.

The lid member 111 is provided substantially horizontally at the lower end of the elevating shaft 114. The upper end of the elevating shaft 114 is connected to an elevating drive means arranged above the lid member 111 outside the buffer chamber 100, for example, a cylinder rod of a cylinder 115. An airtight seal ring (not shown) is provided on the outer peripheral edge of the lower surface of the lid member 111 or on the outer peripheral surface of the buffer chamber 100 facing the outer peripheral edge, that is, on the outer peripheral surface of the buffer chamber 100 around the opening 101a. There is.

In FIG. 3, a discharge tube 11 having a substantially hemispherical shape in this case is airtightly installed on the top wall of the buffer chamber 100. The shape and size of the open portion of the discharge tube 11 are substantially the same as those of the opening portion 101b, and the open portion of the discharge tube 11 is substantially aligned with the opening portion 101b. Discharge tube 1
1 is formed of an electrically insulating material such as quartz.

A waveguide 12a including the discharge tube 11 inside is disposed outside the discharge tube 11. The magnetron 13 which is microwave generation means and the waveguide 12a are connected by a waveguide 12b. Waveguide 12a, 12b
Are formed of an electrically conductive material. Waveguide 12b
Has an isolator 12c and a power monitor 12d. A solenoid coil 14, which is a magnetic field generating means, is attached to the outside of the waveguide 12b.

A sample table 15 is vertically movable in a space defined by the buffer chamber 100 and the discharge tube 11. In this case, the elevating shaft 16 has the axial center of the discharge tube 11 as a substantially axial center, and the upper end portion thereof projects into the buffer chamber 100.
Further, the lower end portion is projected to the outside of the buffer chamber 100, and the bottom wall of the buffer chamber 100 is provided so as to be able to move up and down while keeping the inside of the buffer chamber 100 airtight.

The sample table 15 has a sample mounting surface on its surface. The planar shape and dimensions of the sample table 15 are the opening 101b.
It has a shape and dimensions that allow it to be inserted. The sample table 15 is provided substantially horizontally on the upper end of the elevating shaft 16 with the sample installation surface as the upper surface. The lower end of the elevating shaft 16 is connected to elevating drive means, for example, a cylinder rod of a cylinder (not shown), which is arranged outside the buffer chamber 100 so as to correspond to the bottom wall of the buffer chamber 100.

In this case, the lower end of the elevating shaft 16 is a bias power supply, and is connected to, for example, a high frequency power supply 18. The high frequency power supply 18 is installed outside the buffer chamber 100 and is grounded. In this case, the sample table 15 and the elevating shaft 16 are electrically connected to each other, and the buffer chamber and the elevating shaft 16 are electrically insulated from each other.

A sample delivery tool (not shown) is provided on the sample table 15.
Is provided. That is, the sample delivery tool is the sample table 15
Above and below the sample scooping tools 82, 52 at a position lower than the sample scooping surface of No. 2 and the sample mounting surface of the sample table 15 lower than the sample scooping tool 82 of the arm 81 and the sample scooping tool 52 of the arm 51 It is provided so that it can be moved up and down.

The sample table 15 has a structure in which the temperature can be adjusted. For example, a heat medium channel is formed inside the sample table 15, and a cooling medium which is a heat medium, for example, cooling water, a cooling medium such as liquid ammonium or liquid nitrogen, hot water, or a heating gas is formed in the channel. A heating medium such as is supplied. Further, for example, the sample table 15 is provided with a heat generating means such as a heater.

Outside the sample table 15 and the lifting shaft 16,
Flange 120,121 is provided in the buffer chamber 100. The inner diameters and the shapes of the flanges 120 and 121 are substantially the same as those of the opening 101b. The flange 120 is airtightly provided on the inner surface of the bottom wall of the buffer chamber 100 with the axis of the discharge tube 11, the sample table 15, and the elevating shaft 16 substantially at the center. The flange 121 is the flange 120.
It is arranged opposite to. A metal bellows 122, which is an expansion / contraction shielding means, is provided over the flanges 120 and 121.

An elevating shaft (not shown) has its upper end projecting into the buffer chamber 100 and its lower end projecting outside the buffer chamber 100 so that the bottom wall of the buffer chamber 100 is hermetically sealed. It is installed so that it can be moved up and down. The flange 121 is connected to the upper end of the lifting shaft.

The lower end of the elevating shaft is connected to elevating drive means, for example, a cylinder rod of a cylinder (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. The upper surface of the flange 121 or the outer surface of the top wall of the buffer chamber 100 facing the surface, that is, the opening 101.
An airtight seal ring (not shown) is provided on the inner surface of the top wall of the buffer chamber 100 around b.

The buffer chamber 10 inside the flange 121
An exhaust nozzle 102b is provided on the bottom wall of No. 0.
One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102b, and the other end of the exhaust pipe is connected to an intake port of a decompression exhaust device (not shown) such as a vacuum pump. The exhaust pipe is provided with an on-off valve (not shown) and a pressure control valve, for example, a variable resistance valve (not shown).

One end of a gas introduction tube (not shown) is connected to the processing gas source (not shown), and the other end is opened inside the discharge tube or the like. The gas introduction pipe is provided with an on-off valve and a gas flow rate controller (not shown).

In FIG. 3, the plasma post-treatment chamber 21 is airtightly installed on the top wall of the buffer chamber 100. The shape and size of the opening of the plasma post-treatment chamber 21 are the opening 101c.
The opening of the plasma post-processing chamber 21 is substantially aligned with the opening 101c.

Inside the buffer chamber 100 and plasma post-treatment chamber 2
A sample table 22 is provided in the space defined by the inside of the sample table 1.
In this case, the support shaft 23 has an axial center of the plasma post-treatment chamber 21 as a substantially axial center, and an upper end portion thereof projects into the buffer chamber 100 and a lower end portion thereof projects outside the buffer chamber 100. Is provided on the bottom wall of the buffer chamber 100 while keeping the inside of the buffer chamber 100 airtight.

The sample table 22 has a sample mounting surface on its surface. The planar shape and dimensions of the sample table 22 are the openings 101c.
Therefore, in this case, the shape and size are small. Sample table 22
Is provided substantially horizontally on the upper end of the support shaft 23 with the sample mounting surface as the upper surface. The sample mounting surface of the sample table 22 is located below the sample scooping tool 52 of the arm 51. The sample table 22 is provided with a sample delivery tool (not shown). That is, the sample handing tool is located below the sample mounting surface of the sample table 22 and the sample scooping tool 52 of the arm 51.
It is provided so as to be able to move up and down between the upper position and the upper position.

Outside the sample table 22 and the support shaft 23,
Flange 125 and 126 are provided in the buffer chamber 100. The inner diameters of the flanges 125 and 126 and their shapes are substantially the same as those of the opening 101c. The flange 125 is provided in an airtight manner on the inner surface of the bottom wall of the buffer chamber 100 with the axial centers of the plasma post-treatment chamber 21, the sample table 22, and the support shaft 23 substantially at the center. The flange 126 is arranged to face the flange 125. A metal bellows 127, which is an expansion / contraction shielding means, is provided over the flanges 125 and 126.

An elevating shaft (not shown) has its upper end projecting into the buffer chamber 100 and its lower end projecting outside the buffer chamber 100 so that the bottom wall of the buffer chamber 100 is airtight. It is installed so that it can be moved up and down. The flange 126 is connected to the upper end of the lifting shaft.

The lower end of the elevating shaft is connected to elevating drive means, for example, a cylinder rod of a cylinder (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. The upper surface of the flange 126 or the outer surface of the top wall of the buffer chamber 100 facing the surface, that is, the opening 101.
An airtight seal ring (not shown) is provided on the inner surface of the top wall of the buffer chamber 100 around c.

The buffer chamber 10 inside the flange 125
An exhaust nozzle 102c is provided on the bottom wall of No. 0.
One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102c, and the other end of the exhaust pipe is connected to an intake port of a decompression exhaust device (not shown) such as a vacuum pump.

In FIG. 3, the sample table 130 and the lid member 13 are provided.
1 is provided so as to sandwich the opening 101d. Sample stand 1
30 has a sample mounting surface on its surface. Sample table 130
The planar shape and dimensions of are the shapes and dimensions sufficient to close the opening 101d. The sample table 130 is provided in the buffer chamber 100 such that the opening 101d can be opened and closed, and in this case, can be moved up and down.

In this case, the lifting shaft 132 is provided with the opening 101.
The center of d is substantially the axial center, and the upper end of the center is the buffer chamber 100.
The lower end of the buffer chamber 100 is projected to the inside of the buffer chamber 100, and the lower end of the buffer chamber 100 is projected to the outside of the buffer chamber 100.
It is rotatably provided while maintaining the airtightness inside.

The sample table 130 is provided substantially horizontally on the upper end of the elevating shaft 132 with the sample installation surface as the upper surface. A lower end of the elevating shaft 132 is an elevating and lowering driving means arranged outside the buffer chamber 100 and corresponding to a bottom wall inside the buffer chamber 100,
For example, it is connected to the cylinder rod of the cylinder 133. The outer peripheral edge of the upper surface of the sample table 130, or the inner wall of the top wall of the buffer chamber 100 facing the outer peripheral edge, that is, the opening 101d.
An airtight seal ring (not shown) is provided on the inner surface of the top wall of the buffer chamber 100 around the.

The sample table 130 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is positioned below the sample installation surface of the sample table 130 and the opening 101d.
Is provided so as to be able to move up and down with respect to a position projecting outward from the opening 101d in a state in which is closed by the sample table 130.

The planar shape and dimensions of the lid member 131 are sufficient for closing the opening 101d. Lid member 13
1 is provided outside the buffer chamber 100 so that the opening 101d can be opened, and in this case, can be moved up and down. Lifting axis 1
In this case, the shaft 34 is provided outside the buffer chamber 100 so that the shaft center of the lifting shaft 132 and the shaft center are substantially aligned with each other.

The lid member 131 is provided substantially horizontally at the lower end of the elevating shaft 134. The upper end of the elevating shaft 134 is connected to the elevating drive means, for example, the cylinder rod of the cylinder 135, which is arranged above the lid member 131 outside the buffer chamber 100. An airtight seal ring (not shown) is provided on the outer peripheral edge of the lower surface of the lid member 131, or on the outer peripheral surface of the buffer chamber 100 facing the outer peripheral edge, that is, on the outer peripheral surface of the buffer chamber 100 around the opening 101d. There is.

In FIG. 2 and FIG. 3, a cassette stand 140 is provided outside the buffer chamber 100 so as to be movable up and down in correspondence with the side surface of the buffer chamber 100 in the longitudinal direction of the L-shaped long side.
Outside the buffer chamber 100, a linear guide 141 is provided along the lateral side of the L-shaped long side of the buffer chamber 100. In this case, the end of the guide 141 on the side of the cassette table 140 is extended so as to correspond to the central portion of the cassette table 140.

In this case, the arm 142 is a linear member, and one end thereof is provided in the guide 141 so as to be reciprocally guided by the guide 141. Arm 142
A sample scooping tool 143 is provided at the other end of the.
The cassette table 140 is provided substantially horizontally on the upper end of the elevating shaft 144 with the cassette installation surface as the upper surface. Lifting shaft 14
The lower end of 4 is provided in the lifting drive means 145.

In FIGS. 2 and 3, outside the buffer chamber 100, in this case, a wet process chamber 31, a dry process chamber 41 and a sample recovery chamber 150 are arranged. Wet processing chamber 3
1, the drying processing chamber 41 and the sample recovery chamber 150 are
The buffer chambers 100 are sequentially arranged in series along the side walls on the side of the openings 101c and 101d. Of these, the wet processing chamber 31 is provided at a position closest to the opening 101d.

In FIGS. 2 and 3, the wet processing chamber 31 is provided with a sample table 32a and a sample table 32b. In this case, the support shaft 33 has its upper end projecting into the wet processing chamber 31 and its lower end projecting outside the wet processing chamber 31 to the bottom wall of the wet processing chamber 31, in this case, the wet processing. The chamber 31 is rotatably provided while maintaining airtightness and watertightness. The lower end of the support shaft 33 is connected to a rotary drive means, for example, a rotary shaft of a motor (not shown).

Each of the sample stands 32a and 32b has a sample mounting surface on its surface. The sample stands 32a and 32b are provided substantially horizontally on the upper end of the support shaft 33 with the respective sample mounting surfaces as the upper surface. The sample mounting surfaces of the sample stands 32a and 32b are located below the sample scooping tool 62 of the arm 61. A sample delivery tool (not shown) is provided on each of the sample stands 32a and 32b.

A processing liquid supply pipe (not shown) is provided in the wet processing chamber 31 so that the processing liquid can be supplied toward the sample mounting surfaces of the sample stands 32a and 32b. A treatment liquid supply device (not shown) is installed outside the wet treatment chamber 31.
The processing liquid supply pipe is connected to the processing liquid supply device. A waste liquid discharge pipe (not shown) is connected to the wet process chamber 31. Further, in this case, an inert gas introducing means (not shown) for introducing an inert gas such as nitrogen gas into the wet processing chamber 31 is provided.

In FIGS. 2 and 3, the arm 61 is rotatably provided so as to correspond to the sample table 130 and the sample table 73. The arm 61 is rotatable in the same plane outside the buffer chamber 100. A sample scooping tool 62 is provided at the rotating end of the arm 61. The planar shape of the sample scooping tool 62 is substantially the same as those of the sample scooping tools 52 and 82.

The arm 61 is provided so that the locus of rotation of the sample scooping tool 62 substantially at the center substantially corresponds to the center of the sample table 130. That is, the rotation fulcrum of the arm 61 is located at a position where the approximate center of the sample scooping tool 62 draws the above-described rotation trajectory. In this case, the rotation fulcrum of the arm 61 is provided at the upper end of a rotation shaft 63 that is rotatably provided outside the buffer chamber 100 and outside the sample table 73.
The lower end of the rotary shaft 63 has a rotary drive means, for example, a motor 64.
Is connected to the drive shaft of.

An opening 34 is formed in the side wall of the wet processing chamber 31. The size and position of the opening 34 are such that the sample scooping tool 62 is prevented from entering and retracting. In this case, the opening 34 can be opened / closed by an opening / closing means (not shown).

In FIGS. 2 and 3, a sample stage 42 is provided in the drying processing chamber 41.

The sample table 42 has a sample mounting surface on its surface. The sample table 42 is provided substantially horizontally on the bottom wall of the drying processing chamber 41 with the sample installation surface as the upper surface. In this case, the heater 43 is used as the heating means. The heater 43 is provided on the back surface of the sample table 42 so that the sample table 42 can be heated. The heater 43 is connected to a power source (not shown).

The sample mounting surface of the sample table 42 is located below the sample scooping tool 72 of the arm 71. The sample table 42 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample mounting surface of the sample table 42 and a position above the sample scooping tool 72 of the arm 71.

In this case, the sample delivery tool 31 on the sample table 42
Also the position below the sample mounting surface of the sample table 42 and the arm 71.
It is possible to move up and down with the position above the sample scooping tool 72. Further, in this case, an inert gas introducing means (not shown) for introducing an inert gas such as nitrogen gas into the drying processing chamber 41 is provided.

In FIGS. 2 and 3, a cassette table 151 is provided in the sample recovery chamber 150. Lifting shaft 15
2 is provided on the bottom wall of the sample recovery chamber 150 so that it can be moved up and down by projecting its upper end into the sample recovery chamber 150 and projecting its lower end outside the sample recovery chamber 150.

The cassette table 151 is provided substantially horizontally on the upper end of the elevating shaft 152 with the cassette installation surface as the upper surface. The lower end of the elevating shaft 152 is connected to the elevating drive means 153. Further, in this case, an inert gas introducing means (not shown) for introducing an inert gas such as nitrogen gas into the sample recovery chamber 150 is provided.

2 and 3, the arm 71 and the sample scooping tool 72 are arranged so as not to prevent the arm 71 and the sample scooping tool 72 from entering and leaving the wet processing chamber 31, the drying processing chamber 41, and the sample recovery chamber 150. Openings (not shown) are formed on the side walls of the chambers corresponding to the reciprocating region of the scooping tool 72. In addition, these openings can be opened and closed by opening / closing means (not shown). Further, the sample collection chamber 150 is provided with an opening and a door (both not shown) for loading and unloading the cassette.

2 and 3, a cassette 160 is installed on the cassette stand 140.

In this case, the cassette 160 is capable of accommodating and accommodating a plurality of samples 170 one by one in the height direction, and one of its side surfaces is opened to take out the samples 170 from the cassette 160. The cassette 160 is configured such that the sample take-out open side faces the opening 101a.
It is installed at 40.

Next, a sample processing method using the above sample processing apparatus will be described. As a sample 170, a silicon oxide film 172 having a thickness of 3000 Å is formed on a silicon substrate 171 as shown in FIG. 4, and a TiW layer 173 and Al—C are formed on the silicon oxide film 172.
A laminated wiring with the u-Si film 174 was formed, and the sample 170 using the photoresist 175 as a mask was used.
0 was processed using the apparatus shown in FIGS.

As the etching processing conditions, processing gas species = BCl ₃ + Cl ₂ , processing gas flow rate = 150 sccm, processing pressure = 16 mTorr, microwave output = 600 W, and RF bias = 60 W were selected.

After the etching treatment, all the subsequent steps were passed without treatment (A), after the etching treatment, plasma post-treatment was performed, and the subsequent wet treatment and drying treatment were omitted (B). ) And those subjected to a predetermined treatment in all steps (D), and those subjected to a wet treatment and a dry treatment (C) with the plasma post-treatment after the etching treatment omitted, and comparing the effects on the corrosion protection. I tried.

The processing conditions in the plasma post-processing are as follows: processing gas type = O ₂ + CF ₄ , processing gas flow rate = 400 sccm
(O ₂ ), 35 sccm (CF ₄ ), processing pressure = 1.5 Torr,
The plasma was generated using a microwave of 2.45 GHz.

In this case, the plasma post-treatment is mainly for the purpose of ashing the photoresist and removing the chlorine compound remaining on the pattern side wall protection film and the pattern bottom. Minute additional processing was performed.

In the wet treatment, a spinning water washing treatment with pure water for 1 minute and a spinning drying for 30 seconds were performed. Furthermore, in a nitrogen gas atmosphere, use a heater to set the sample stand 1
After heating to 50 ° C., the wet-processed sample was left standing for 1 minute to carry out a drying process.

As a result, a plasma post-treatment after the etching treatment and a wet treatment, that is, a treatment in which the washing treatment and the drying treatment were omitted were observed with an optical microscope. The thing of the shape was recognized. Then, when this was further observed in detail using SEM, as shown in FIG. 5, the TiW layer and the Al—Cu were
The product 180 due to the fan-shaped corrosion was observed starting from the boundary with the -Si film.

Therefore, the plasma post-treatment condition is O
The mixing ratio of CF _{4 to 2} is 5 to 20% and the processing pressure is 0.
The sample temperature was set to 6 to 2 Torr and the sample temperature was raised to 250 ° C. during the treatment. In all cases, the same corrosion as above was observed within a few hours after the treatment.

The above-mentioned corrosion is not recognized in the Al-Cu-Si single layer wiring film. In other words, from this, it is considered that in the laminated wiring of different metals having different ionization tendencies, corrosion is generated and accelerated by so-called electrolytic corrosion caused by the cell action.

In order to sufficiently prevent the occurrence of such corrosion, it has been found that it is necessary to thoroughly remove even a slight chlorine component which cannot be completely removed by the plasma post-treatment after the etching treatment. Then, as described above, when the treatment was performed under various conditions and the time until the corrosion occurred after the treatment was examined, the results shown in FIG. 6 were obtained.

As is apparent from FIG. 6, for wiring materials such as laminated wiring that are highly corroded, plasma post-treatment such as resist ashing is performed after etching, or plasma post-treatment such as resist ashing is performed after etching. If the water treatment and the dry treatment are carried out without doing so, the corrosive effect is not sufficient, and it is high for 30 hours or more only after the plasma post-treatment such as etching treatment and resist ashing, the water washing treatment and the drying treatment are carried out in a consistent manner. Anticorrosion effect can be obtained.

In addition to the above, the same effect can be obtained by treating with hydrofluoric nitric acid before the washing with water for the purpose of removing the residue after etching. Further, after the etching process and the plasma ashing process, for the purpose of removing the pattern side wall protective film that cannot be completely removed by the process, a weak alkaline solution or a weak acidic solution (eg acetic acid) is applied, followed by washing with water and drying. By performing the treatment, the chlorine component can be removed more completely, and the anticorrosion effect can be further improved.

FIG. 7 shows the correlation between the acetic acid concentration and the corrosion occurrence rate when the wet treatment is performed with acetic acid. As is clear from FIG. 7, when the acetic acid concentration is 10 to 20%, the corrosion occurrence rate becomes the minimum. Further, FIG. 8 shows the processing time dependency of the residual chlorine amount on the sample surface. As is clear from FIG. 8, the residual chlorine amount gradually decreases from the start of the treatment to 4 minutes and becomes constant thereafter, so that it is understood that the treatment time is required to be 4 minutes or more.

In this case, a series of etching process to ashing process is performed in 1 to 2 minutes, while 4 minutes is remarkably long, and thus the throughput is limited by this wet processing.
This causes a decrease in throughput. Therefore, as shown in FIG. 2, a plurality of wet processes are arranged in parallel to prevent a decrease in throughput. In some cases, chemical solution treatment and water washing treatment can be sequentially performed in series.

In an aqueous solution containing only acetic acid, adsorbed chlorine on the surface of the sample may dissolve into water during the processing of the sample to locally generate high-concentration hydrochloric acid to etch Al.
Therefore, a buffer solution of weak acid (for example, acetic acid) -weak alkali (for example, ammonia) is used so that Al is not locally etched.

FIG. 9 shows the buffering effect of ammonium acetate. As is clear from FIG. 9, the anticorrosion effect is recognized in all the buffer regions, but Al is etched in the alkaline region, so it is desirable to use it in the acidic region.

By increasing the processing temperature,
Since the required processing time shown in FIG. 8 can be shortened,
The temperature of the treatment chemicals was controlled to be from room temperature to 100 ° C. Four
It took 5 minutes at 0 ° C, but by setting it to 80 ° C, 2
A sufficient effect can be obtained in about a minute.

[0114]

[Embodiment 2] FIG. 10 illustrates a second embodiment of the present invention. The difference from Embodiment 1 is that a passivation treatment device 190 is attached to the subsequent stage of the drying treatment device 40. That is the point.

In this case, the sample transfer means 90 transfers the dried sample from the drying processing chamber (not shown) of the drying processing device 40 to the passivation processing chamber (not shown) of the passivation processing device 190. Have. Further, a sample transfer means 200 for transferring the passivated sample to, for example, a recovery cassette (not shown) is provided. Note that FIG.
In the figure, the same devices and the like as those in FIG.

In FIG. 10, a sample (not shown) that has been subjected to etching treatment and plasma post-treatment is processed by a sample transfer means 60 in a wet processing chamber (not shown) of a wet processing apparatus 30.
And is installed on a sample table (not shown) which is a wet processing station in the wet processing chamber.

The plasma post-processed sample placed on the sample stage in the wet process chamber is subjected to, for example, a developing solution process (TMAH). By such a wet treatment, residues and the like after etching are sufficiently removed. Along with this, when the sample has Al as a component as shown in FIG. 4, for example, the Al is also partially dissolved.

If such a sample is then dried and taken out into the atmosphere, for example, oxidation, which is a form of corrosion, occurs, which is inconvenient. Therefore, the sample which has been subjected to the developing solution treatment and the drying treatment in the drying treatment chamber of the drying treatment device 40 is passivated by the sample conveying means 90.
Is loaded into the passivation processing chamber and is set on a sample mounting surface of a sample table (not shown) which is a processing station in the passivation processing chamber.

On the other hand, in the passivation processing chamber, gas plasma for passivation processing, in this case, oxygen gas plasma is generated or transferred. The dry-processed sample placed on the sample stage in the passivation processing chamber is passivated by the oxygen gas plasma.

The passivated sample is transferred from the passivation processing chamber to the recovery cassette by the sample transfer means 200 and is recovered and stored. In addition to the above, the passivation treatment may be performed using nitric acid, for example.

Although the invention made by the present inventor has been specifically described based on the embodiments, the invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

In the above embodiment, the etching process-
The order of plasma post-treatment-wet treatment-drying was,
The order of etching treatment-wet treatment-drying treatment-plasma post-treatment may be performed.

In this case, in the wet treatment, for example, preliminary removal of residues after etching and removal of the resist are carried out. Further, for example, preliminary removal of residues after etching is performed. In such a case, in the plasma post-treatment, for example, removal of residual residues is performed,
Further, for example, removal of residual residue and removal of the resist are performed.

Further, in the above-mentioned embodiment, as for the time until the wet treatment of the plasma post-treated sample is completed, for example, in the case of the sample as shown in FIG. 4, as shown in FIG. 6, corrosion occurs in about 1 hour. Therefore, it is limited within that time at the longest. However, it is desirable to complete the wet treatment within the shortest possible time. In other words, it is desirable that the sample after the plasma post-treatment is immediately transported from the plasma post-treatment device to the wet treatment device for wet treatment.

In the above embodiment, the plasma post-processed sample is transported in the atmosphere, but it may be transported in a vacuum or in an inert gas atmosphere. The transportation in such an atmosphere is effective when the time from the plasma post-treatment to the start of the wet treatment is longer than the corrosion occurrence time in the atmosphere, for example. Further, in such a case, a means may be provided between the plasma post-treatment device and the wet treatment device to temporarily store the plasma post-treatment sample under a vacuum or in an inert gas atmosphere.

[0126]

The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.

(1) According to the present invention, the corrosive substance generated by the etching treatment of the sample can be sufficiently removed, so that the corrosion of the sample after the etching treatment can be sufficiently prevented regardless of the kind of the sample. be able to.

(2) According to the present invention, since a plurality of sample stands of the wet processing apparatus are installed, the processing throughput can be improved without impairing the anticorrosion effect.

(3) According to the present invention, since the temperature of the chemical liquid for wet treatment can be adjusted, proper wet treatment can be performed.

[Brief description of drawings]

FIG. 1 is a block configuration diagram of a sample processing apparatus which is an embodiment of the present invention.

FIG. 2 is a detailed detailed plan view of the device shown in FIG.

FIG. 3 is a vertical cross-sectional view of the device shown in FIG.

FIG. 4 is a vertical sectional view showing an example of a sample.

FIG. 5 is an external perspective view of a sample showing an example of corrosion occurrence.

FIG. 6 is a graph showing the relationship between the treatment mode after etching treatment and the time until corrosion occurs.

FIG. 7 is a graph showing the relationship between the acetic acid concentration and the corrosion occurrence rate when the wet treatment is performed with acetic acid.

FIG. 8 is a graph showing the processing time dependency of the amount of residual chlorine on the sample surface.

FIG. 9 is a graph showing the buffering effect of ammonium acetate.

FIG. 10 is a block configuration diagram of a sample processing apparatus which is another embodiment of the present invention.

[Explanation of symbols]

 10 Processing Equipment 11 Discharge Tube 12a, 12b Waveguide 12c Isolator 12d Power Monitor 13 Magnetron 14 Solenoid Coil 15 Sample Stand 16 Elevating Axis 18 High Frequency Power Supply 20 Plasma Post-Processing Equipment 21 Plasma Post-Processing Chamber 22 Sample Stand 23 Support Axis 30 Wet Processing Apparatus 31 Wet processing chamber 32a Sample stage 32b Sample stage 33 Support shaft 34 Opening 40 Drying treatment apparatus 41 Drying treatment chamber 42 Sample stage 43 Heater 50 Sample conveying means 51 Arm 52 Sample scooping tool 53 Rotating shaft 54 Motor 60 Sample conveying means 61 arm 62 sample scooping tool 63 rotary shaft 64 motor 70 sample transport means 71 arm 72 sample scooping tool 73 sample table 80 sample transport means 81 arm 82 sample scooping tool 83 rotary shaft 90 sample transport means 100 buffer chamber 101a-10 1d Openings 102a-102c Exhaust nozzle 110 Sample stand 111 Lid member 112 Lifting shaft 113 Cylinder 114 Lifting shaft 115 Cylinder 120 Flange 121 Flange 122 Metal bellows 125 Flange 126 Flange 127 Metal bellows 130 Sample stand 131 Lid member 132 Lifting shaft 133 Cylinder 134 Lifting shaft 135 Cylinder 140 Cassette stand 141 Guide 142 Arm 143 Sample scooping tool 144 Lifting shaft 145 Lifting drive means 150 Sample collection chamber 151 Cassette stand 152 Lifting shaft 153 Lifting drive means 160 Cassette 170 Sample 171 Silicon substrate 172 Silicon oxide film 173 TiW layer 174 Al-Cu-Si film 175 Photoresist 180 Product 190 Passivation processing device 200 Sample transport means

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuyuki Sunaga 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Inside the Musashi Factory, Hitachi, Ltd. (72) Inventor Takashi Yamada, Josuimotocho, Kodaira-shi, Tokyo 5-20-1 Incorporated Hitachi, Ltd. Musashi Plant (72) Inventor Keizo Kuroiwa 5-201-1 Kamimizuhoncho, Kodaira-shi, Tokyo Incorporated Hitachi Ltd. Musashi Plant (72) Inventor Kazuo Nojiri 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Inside the Musashi Factory, Hitachi, Ltd. (72) Inventor Yoshinao Kawasaki 794 Higashitoyoi Higashitoyoi, Shimomatsu City, Yamaguchi Prefecture Inside the Kasado Factory, Hitachi Ltd. (72) Inventor Sato Nisho, Higashi-Toyoi 794, Kudamatsu City, Yamaguchi Prefecture Inside the Kasado Plant, Hiritsu Manufacturing Co., Ltd. (72) Inventor, Ryoji Fukuyama, 502 Kintate-cho, Tsuchiura City, Ibaraki Prefecture Research house (72) inventor Kawahara Hiroshisen Yamaguchi Prefecture Kudamatsu Higashitoyoi 794 address, Inc. Date falling Works Ryuto in the factory

Claims (8)

[Claims] 1. A step of treating a sample, a step of post-treating the treated sample using plasma under reduced pressure, a step of wet-treating the post-treated sample, and a step of drying the wet-treated sample. And a step of treating the post-treated sample with a plurality of wet treatment means. 2. A sample having an Al—Cu—Si alloy film and having a resist on the surface to be etched, or Al—C.
A sample having a laminated structure of a u-Si alloy film and a refractory metal or its silicide film and having a resist on the surface to be etched is subjected to etching treatment under reduced pressure using gas plasma containing chlorine, and the etching treatment is completed. Ashing the sample under reduced pressure using a gas plasma containing oxygen, cleaning with a processing liquid capable of removing the corrosive components remaining on the surface of the ashed sample, and drying the cleaned sample The sample processing method according to claim 1, further comprising: 3. The sample processing method according to claim 2, wherein the ashed sample is washed with a buffer solution of a weak acid and a weak alkali and water. 4. A step of treating a sample, a step of post-treating the treated sample using plasma under reduced pressure, a step of wet-treating the post-treated sample, and a step of drying the wet-treated sample. And a step of passivating the dried sample using plasma under reduced pressure,
A sample processing method, wherein the step of wet processing the post-processed sample is performed by a plurality of wet processing means. 5. A means for treating a sample, a means for post-treating plasma of the specimen treated by the treatment means under reduced pressure, a means for wet-treating the specimen treated by the plasma post-treatment means, and the wet method. A sample processing apparatus, comprising: a means for drying the processed sample by the processing means; and a plurality of means for wet-processing the processed sample by the plasma post-processing means. 6. An etching chamber, a means for evacuating the inside of the etching chamber under reduced pressure, a means for introducing an etching gas containing chlorine into the etching chamber, a means for converting the etching gas into a plasma in the etching chamber, and Al—Cu—Si.
The sample having an alloy film and having a resist on the surface to be etched, or the sample having a laminated structure of an Al-Cu-Si alloy film and a refractory metal or a silicide film thereof and having a resist on the surface to be etched is etched. A plasma etching apparatus provided with a sample stage held in a chamber, a post-treatment chamber, means for decompressing and exhausting the post-treatment chamber, means for introducing an ashing gas containing oxygen into the post-treatment chamber, and the inside of the post-treatment chamber. A plasma post-processing apparatus including a means for converting an ashing gas containing oxygen into a plasma and a sample stage for holding the etching-processed sample ashed using the gas plasma in the post-processing chamber, and a wet processing chamber A plurality of sample stands that hold the ashed sample that is wet-processed in the wet processing chamber in the wet processing chamber; A wet treatment apparatus including a means for supplying a treatment liquid for removing the corrosive components remaining on the surface of the singulated sample to the surface of the ashed sample held on the sample stage, a drying treatment chamber, and the drying A drying stage having a sample stage for holding the wet-processed sample to be dried in the process chamber in the drying chamber and a unit for heating the wet-processed sample held on the sample stage; The sample processing apparatus according to claim 5, further comprising: a sample transporting device that transports each of the samples between the sample table of the device on the side of the sample and the device on the downstream side. 7. The processing solution for the wet processing apparatus is heated from room temperature to 1
The sample processing apparatus according to claim 6, further comprising temperature control means for heating up to 00 ° C. 8. A means for treating a sample, a means for post-treating plasma of the specimen treated by the treatment means under reduced pressure, a means for wet-treating the specimen treated by the plasma post-treatment means, and the wet method. A plurality of means for drying the treated sample by the means for treating, a means for plasma passivating the dried sample, and a means for wet-treating the treated sample by the plasma post-treatment means. A sample processing device characterized by the above.