JP4405236B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing equipment for processing the substrate.

  Semiconductor device manufacturing processes include a process of selectively etching an oxide film or the like formed on the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”), and impurities such as phosphorus, arsenic, and boron on the surface of the wafer. Injecting locally. In these processes, a resist film made of an organic material such as a photosensitive resin is patterned on the outermost surface of the wafer in order to prevent etching or impurity implantation to an undesired portion, and a portion where etching or impurity implantation is not desired is resisted. Masked by the membrane. Since the resist film patterned on the wafer becomes unnecessary after etching or impurity implantation, after the etching or impurity implantation, a resist removal process for removing the unnecessary resist film on the wafer is performed. Done.

The resist removal process can be achieved by, for example, removing the resist film by ashing (ashing) with an ashing apparatus, and then carrying the wafer into a cleaning apparatus and removing the resist residue after ashing from the surface of the wafer. In the ashing apparatus, for example, a processing chamber containing a wafer to be processed is made an oxygen gas atmosphere, and microwaves are emitted into the oxygen gas atmosphere. As a result, oxygen gas plasma (oxygen plasma) is generated in the processing chamber, and this oxygen plasma is irradiated onto the wafer surface, whereby the resist on the wafer surface is decomposed and removed. On the other hand, in the cleaning apparatus, for example, a chemical solution such as APM (ammonia-hydrogen peroxide mixture) is supplied to the wafer surface, and the wafer surface is cleaned with the chemical solution (resist residue removal process). As a result, the resist residue adhering to the surface of the wafer is removed.
JP 2001-3008078 A

  The ashing device and the cleaning device are configured as separate devices, and each operate according to a recipe (process table that defines processing time and processing contents) created in advance. If the thickness of the resist film formed on the surface of the wafer is large, the residue containing the resist on the wafer surface after ashing increases, and this large amount of residue may not be removed by the cleaning process. On the other hand, if the film thickness of the resist film formed on the wafer surface is small, the surface of the wafer is damaged by excessive ashing (overash), or cleaning with a chemical solution is performed for a longer time than necessary. There is a risk that the surface of the wafer may receive damage due to breakage. In other words, since each process of the ashing device and the cleaning device cannot perform a process according to the state of the wafer surface, the resist removal process using the conventional ashing device and the cleaning device generates a resist residue on the wafer surface. Or the surface of the wafer may be damaged.

It is an object of the present invention, without damaging the surface of the substrate, is to provide a substrate processing method and a substrate processing equipment to resist from the surface of the substrate can be satisfactorily removed.

In order to achieve the above object, the invention according to claim 1 includes a plasma ashing process (S1) for ashing and removing the resist on the substrate (W) by plasma of a processing gas containing at least oxygen, and the plasma. After completion of the ashing process, a removal processing step (S7) for supplying a treatment liquid onto the substrate to remove a removal target on the substrate, and a removal target on the substrate before the start of the removal processing step. In the removal object state measuring step (S3; E2) for measuring the state of the object and the removal processing step for the substrate based on the state of the removal object on the substrate measured in the removal object state measuring step. And a removal processing condition setting step (S5; E3) for setting the processing conditions of the above processing, wherein the removal processing step causes a jet of droplets of the processing liquid formed by colliding the processing liquid and gas onto the substrate . subjected sheet, the substrate Removing a residue removal target containing the remaining resist is a process, the removal target state measuring step, Ri step der measuring the number of the residues, the removal processing condition setting step, the removal based on the number of residues on the substrate as measured by the object state measuring step, and wherein the step der Rukoto of setting the supply flow rate or supply pressure of the gas for the formation of the jet of the treatment liquid droplets A substrate processing method.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to the first aspect of the present invention, the state of the removal object on the substrate is measured before the start of the removal processing step, and the removal processing is performed on the substrate under conditions according to the measurement result. For example, by adjusting the time of the removal process according to the amount of the removal target on the substrate, the removal target (for example, a resist film or a resist is removed from the surface of the substrate without damaging the surface of the substrate. (Residues containing it) can be removed satisfactorily.
Further, by supplying a jet of droplets of the processing liquid onto the substrate, in addition to the processing capability (for example, oxidizing power) of the processing liquid, by the impact when the jet of the droplet collides with the surface of the substrate The object to be removed can be eliminated from the substrate.

  The plasma ashing treatment step, as described in claim 2, includes at least oxygen gas and a fluorine-based gas, and a mixed gas having a fluorine-based gas concentration of 1% by volume or less is used as a processing gas. The plasma may be generated and the resist on the substrate may be ashed and removed by the plasma, and at least oxygen gas, fluorine-based gas, and hydrogen gas may be used as claimed in claim 3. And a forming gas diluted with an inert gas so that the concentration thereof is 4% by volume or less, the concentration of the fluorine-based gas is 1% by volume or less, and the concentration of the forming gas is 50% by volume or less. The process may be a step of using a mixed gas as a processing gas, generating plasma of the processing gas, and ashing and removing the resist on the substrate by the plasma. By using these gases, a hardened layer is formed on the surface by ion implantation or etching, and even for resists where ashing with little residue is difficult with oxygen alone, there is little residue and low damage ashing is performed. It can be carried out.

  According to a fourth aspect of the present invention, in the plasma ashing process, a processing gas is supplied at a predetermined flow rate in a range of 100 to 6000 sccm in a plasma processing chamber (123) in which a substrate to be processed is accommodated. In a process of exhausting while supplying and generating a plasma of a processing gas while maintaining the pressure in the plasma processing chamber within a range of 5 to 400 Pa, and ashing and removing the resist on the substrate by the plasma. Preferably there is. When the processing gas flow rate is increased in the range of 100 sccm or more, the exhaust gas replacement efficiency by resist ashing and the plasma diffusion rate are increased, and the processing can be performed with high efficiency. On the other hand, the processing gas flow rate is 6000 sccm. If it makes it above, there exists a possibility of causing rolling-up of a particle. Further, when the processing pressure is 5 Pa or less, the plasma density is remarkably reduced due to a decrease in the density of the processing gas. When the processing pressure is 400 Pa or more, the life of the excited plasma is remarkably shortened. That is, by maintaining the atmospheric pressure in the plasma processing chamber within the range of 5 to 400 Pa, the plasma of the processing gas can be excited satisfactorily in the plasma processing chamber.

  Furthermore, as described in claim 5, in the plasma ashing process, the ashing speed increases depending on the processing temperature, but the risk of inducing a phenomenon of increasing residues such as popping also increases. More preferably, the process is performed while maintaining the temperature of the substrate to be processed within the range of room temperature to 400 ° C., and maintaining the temperature of the substrate within such a temperature range improves the resist on the substrate. Can be ashed.

The removal treatment step may be a step of supplying a treatment liquid onto the substrate and removing the resist film remaining on the substrate as an object to be removed, or supplying a treatment liquid onto the substrate, It may be a step of removing a residue including a resist remaining on the substrate as an object to be removed. Here, the residue will have a particle (particulate) and the film-like residue containing resist.

  When the removal object state measurement step is performed after the plasma ashing treatment step is completed, it is preferably performed in a state where the substrate is held at a predetermined temperature, and the atmosphere around the substrate is further changed to an inert gas. More preferably, it is carried out in an atmosphere. In addition, when the plasma ashing process is performed in a state where the substrate to be processed is placed on the substrate placing table provided in the plasma processing chamber, the substrate is continuously placed on the substrate placing table. The removal object state measurement step may be performed in a state.

According to the present invention, a jet of treatment liquid droplets can be supplied over a wide area on a substrate.
In addition, when the supply position of the droplet jet is reciprocated within a predetermined range, the more the number of reciprocations, the stronger the processing by the droplet jet of the processing liquid is applied to the substrate. By setting the number of reciprocations of the supply position of the jet flow to an appropriate number according to the state of the removal target on the substrate measured in the removal target state measurement step, without damaging the surface of the substrate, The removal object can be satisfactorily removed from the surface of the substrate.

The invention described in claim 6 is characterized in that the removal treatment step is a step of removing a removal target object on the substrate by supplying a mixed solution of sulfuric acid and hydrogen peroxide solution onto the substrate. a substrate processing method according to any one of claims 1 to 5.
According to the present invention, the object to be removed on the substrate can be satisfactorily removed by the strong oxidizing power of the mixed solution of sulfuric acid and hydrogen peroxide solution.

According to the seventh aspect of the invention, based on the state of the removal target on the substrate measured in the removal target state measurement step, the processing conditions in the plasma ashing step for the next substrate of the substrate are determined. a substrate processing method according to any one of claims 1 to 6, further comprising a feedback ashing condition setting step of setting.
According to the present invention, the measurement result in the removal object state measurement process is used to set the processing conditions in the plasma ashing process for the next substrate, thereby responding to variations in the substrate to be processed. Since ashing can be performed, the amount of the removal target attached to the surface of the substrate after the plasma ashing process is reduced without damaging the surface of the next substrate in the plasma ashing process. It becomes possible.

In the invention described in claim 8 , the removal object state measurement step (E2) is performed in the middle of the plasma ashing treatment step, and the removal treatment condition setting step is measured in the removal object state measurement step. The step (E3) of setting the execution time of the removal treatment step for the substrate based on the state of the removal target on the substrate, wherein the substrate treatment method is performed during the plasma ashing treatment step. It further includes a plasma ashing treatment time setting step (E4) for setting the execution time of the plasma ashing treatment step based on the execution time of the removal treatment step set in the removal treatment condition setting step. a substrate processing method according to any one of claims 1 to 6.

According to the present invention, it is possible to prevent damage to the surface of the substrate in both the plasma ashing treatment step and the removal treatment step.
In addition, if the ratio of the processing time of the plasma ashing treatment process and the processing time of the removal treatment process is set to be opposite to the ratio of the number of units performing the plasma ashing treatment and the number of units performing the removal treatment, Substantially at the same time as the substrate is unloaded from the processing unit where the removal process is performed, the substrate can be unloaded from the processing unit where the plasma ashing process is performed, and the removal process is performed on the unloaded substrate. Can be immediately loaded into the processing unit. Therefore, the substrate processing apparatus can be operated most efficiently, and the substrate processing speed can be dramatically improved.

The invention according to claim 9 is measured by a pre-removal object state measuring step for measuring a state of the removal object on the substrate and the pre-removal object state measuring step before the start of the plasma ashing process. 2. A feed forward ashing treatment condition setting step of setting a treatment condition in the plasma ashing treatment step for the substrate based on a state of an object to be removed on the substrate. 9. The substrate processing method according to any one of 1 to 8 .

According to the present invention, if the processing conditions in the plasma ashing process for the substrate are appropriately set based on the state of the object to be removed on the substrate before receiving the process in the plasma ashing process, The number of residues attached to the surface of the substrate after the treatment can be reduced without damaging the surface of the substrate in the ashing process.
As described in claim 10 , prior to the plasma ashing treatment step, a pretreatment step of supplying a treatment liquid onto a substrate to be subjected to plasma ashing treatment in the plasma ashing treatment step may be performed. in this case, as described in claim 11, before the start of the plasma ashing step, the pre-removal target state measuring step of measuring the state of the removal target on the substrate is performed, the pre-removal target Based on the state of the object to be removed on the substrate measured in the object state measuring step, a pre-processing condition setting step for setting processing conditions in the pre-processing step for the next substrate of the substrate may be further performed. preferable.

The invention described in claim 12 is a plasma processing chamber (123) for accommodating a substrate (W) to be processed, and processing gas introducing means (125, 42) for introducing a processing gas containing at least oxygen into the plasma processing chamber. , 421, 422, 423) and plasma excitation means (122, 129, 43) for exciting the plasma of the processing gas by radiating microwaves into the plasma processing chamber into which the processing gas has been introduced, Plasma ashing treatment means (12) for performing plasma ashing treatment for ashing and removing the resist on the substrate using plasma, and processing on the substrate after plasma ashing treatment by the plasma ashing treatment means A removal processing means (13) for supplying a liquid and performing a removal process for removing the object to be removed on the substrate, and a removal process by the removal processing means Before the start, the removal object state measurement means (14, 81) for measuring the state of the removal object on the substrate and the state of the removal object on the substrate measured by the removal object state measurement means. And a removal processing condition setting means (63; 84) for setting conditions for the removal processing by the removal processing means for the substrate, and the removal object state measuring means includes a resist remaining on the substrate. The removal processing means includes a jet supply means (133) for supplying a jet of droplets of the processing liquid formed by colliding the processing liquid and gas onto the substrate. The removal processing condition setting means sets the gas supply flow rate or supply pressure to the jet supply means based on the number of residues on the substrate measured by the removal object state measurement means. A substrate processing apparatus according to claim.

In the substrate processing apparatus having such a configuration, the invention of claim 1 can be implemented, and the effects described in relation to claim 1 can be achieved.
The processing gas introduction means, as described in claim 13 , introduces at least an oxygen gas and a fluorine-based gas into the plasma processing chamber as a mixed gas having a fluorine-based gas concentration of 1% by volume or less. it may be, as claimed in claim 14, at least oxygen gas, a fluorine-based gas, and a forming gas whose concentration of hydrogen gas diluted with such an inert gas is 4 vol% or less In addition, a mixed gas having a fluorine gas concentration of 1% by volume or less and a forming gas concentration of 50% by volume or less may be introduced into the plasma processing chamber as a process gas.

The invention described in claim 15 is an exhaust means (124, 41) for exhausting the gas in the plasma processing chamber, and the processing gas introducing means and the exhaust gas during the plasma ashing treatment by the plasma ashing treatment means. Controlling means to exhaust the process gas into the plasma processing chamber while supplying the processing gas at a predetermined flow rate in the range of 100 to 6000 sccm and maintaining the atmospheric pressure in the plasma processing chamber in the range of 5 to 400 Pa. a substrate processing apparatus according to any one of claims 12 to 14, further comprising a means.

In the substrate processing apparatus having such a configuration, the invention of claim 4 can be implemented, and the effects described in relation to claim 4 can be achieved.
According to a sixteenth aspect of the present invention, there is provided a substrate mounting table (127) provided in the plasma processing chamber on which a substrate to be processed is mounted, and a substrate mounted on the substrate mounting table. In the plasma ashing treatment by the substrate heating means (128) and the plasma ashing treatment means, the substrate heating means is controlled so that the temperature of the substrate placed on the substrate placing table is from room temperature to 400 ° C. The substrate processing apparatus according to any one of claims 12 to 15 , further comprising an ashing processing substrate temperature control means (44) held within a range.

In the substrate processing apparatus having such a configuration, the invention of claim 5 can be implemented, and the effects described in relation to claim 5 can be obtained.
The invention of claim 17 wherein, said removal processing means, according to claim 12, characterized in that it comprises a SPM supply means for supplying a mixed solution of sulfuric acid and hydrogen peroxide on the substrate (52) The substrate processing apparatus according to any one of 1 to 16 .

If provided with the above-mentioned SPM supply means may implement the invention of claim 6, Ru can achieve the effects described in connection with claim 6.

請 Motomeko 18 invention described, based on the state of the removal target on the substrate measured by the removal target state measuring means, a plasma ashing treatment by the plasma ashing means for the next substrate of the substrate a substrate processing apparatus according to any one of claims 12 to 17, characterized in condition further comprising a feedback ashing condition setting means (63) for setting the.

In the substrate processing apparatus having such a configuration, it is possible to carry out the invention of claim 7, it is possible to obtain the effects described in connection with claim 7.
The invention according to claim 19 is the removal object state measuring means for measuring the state of the removal object on the substrate in the middle of the plasma ashing process (81). The condition setting means sets the execution time of the removal process by the removal processing means for the substrate based on the state of the removal object on the substrate measured by the removal object state measurement means. The processing apparatus is configured to set the execution time of the plasma ashing process based on the execution time of the removal process set by the removal process condition setting unit during the plasma ashing process by the plasma ashing process unit. a substrate processing apparatus according to any one of claims 12 to 17, further comprising a ashing time setting means (84).

In the substrate processing apparatus having such a configuration, it is possible to carry out the invention of claim 8, it is possible to obtain the effects described in connection with claim 8.
The invention according to claim 20 is the pre-removal object state measuring means (14A) for measuring the state of the removal object on the substrate before the start of the plasma ashing treatment by the plasma ashing treatment means, and the pre-removal. Feedforward ashing treatment condition setting means for setting the conditions of the plasma ashing treatment by the plasma ashing treatment means on the substrate based on the state of the removal object on the substrate measured by the object state measuring means; a substrate processing apparatus according to any one of claims 12 to 19, characterized in that it comprises further.

In the substrate processing apparatus having such a configuration, it is possible to carry out the invention of claim 9, it is possible to obtain the effects described in connection with claim 9.
The invention described in claim 21 further includes pre-processing means (13) for supplying a processing liquid onto the substrate to be subjected to the plasma ashing treatment prior to the plasma ashing treatment step by the plasma ashing treatment means. a substrate processing apparatus according to any one of claims 12 to 20, characterized in.

In the substrate processing apparatus having such a configuration, the invention of claim 10 can be carried out.
The invention according to claim 22 is the pre-removal object state measuring means (14A) for measuring the state of the removal object on the substrate before the start of the plasma ashing process by the plasma ashing process means, and this pre-removal. Preprocessing condition setting means for setting processing conditions by the preprocessing means for the next substrate of the substrate based on the state of the removal object on the substrate measured by the object state measuring means. 22. The substrate processing apparatus according to claim 21 , wherein the substrate processing apparatus is characterized in that:

The substrate processing apparatus having such a configuration, it is possible to carry out the invention of claim 11, it is possible to obtain the effects described in connection with claim 11.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a simplified plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is an apparatus for performing a resist removal process on a wafer W as an example of a substrate. Specifically, a resist pattern (resist coating, exposure and development steps are performed to form a pattern. By supplying an etching solution onto a thin film such as an oxide film on which a resist film is formed), the wafer W on which the thin film is selectively etched, or phosphorus, arsenic on the surface on which the resist pattern is formed Irradiation of ions of impurities such as boron is performed to remove the resist pattern that is no longer necessary from the surface of the wafer W, with the wafer W having impurities implanted locally on the surface as a processing target. Device.

  The substrate processing apparatus includes a substrate processing unit 1 and an indexer unit 2 coupled to the substrate processing unit 1. A plurality (three in this embodiment) of cassette mounting tables 3 on which one cassette C can be mounted are arranged side by side on the opposite side of the indexer unit 2 to which the substrate processing unit 1 is coupled. It has been. The cassette C is used when the wafer W is transported in a factory where the substrate processing apparatus is installed, and can accommodate and hold a plurality of wafers W in a stacked state.

  The substrate processing unit 1 is provided with a substrate transfer unit 11 at a position adjacent to the central portion of the indexer unit 2 in plan view, and each of the two plasmas so as to surround the periphery of the substrate transfer unit 11 in a U shape. An ashing unit 12, a chemical solution cleaning unit 13, and a measurement unit 14 are arranged. For example, the two plasma ashing units 12 and the two chemical solution cleaning units 13 are opposed to each other with the substrate transfer unit 11 in between.

The substrate transfer unit 11 includes a substrate transfer robot 15. The substrate transfer robot 15 can access the plasma ashing unit 12, the chemical solution cleaning unit 13, and the measurement unit 14, and can transfer the wafer W to and from these units 12 to 14. ing.
The indexer unit 2 includes an indexer robot 21, which can access the cassette C mounted on the cassette mounting table 3 and take out an unprocessed wafer W from the cassette C. The unprocessed wafer W taken out can be transferred to the substrate transfer robot 15. Further, the indexer robot 21 can receive the processed wafer W from the substrate transfer robot 15, and can store the received wafer W in the cassette C mounted on the cassette mounting table 3. The processed wafer W may be stored in the cassette C stored when the wafer W is in an unprocessed state, or the cassette C storing the unprocessed wafer W and the processed wafer W are stored. The cassette C to be stored may be separated and stored in a different cassette C from the cassette C stored in an unprocessed state.

  FIG. 2 is a flowchart for explaining the overall operation of the substrate processing apparatus. When the unprocessed wafer W is taken out from the cassette C by the indexer robot 21 and the wafer W is transferred to the substrate transfer robot 15, the substrate transfer robot 15 transfers the wafer W to one of the two plasma ashing units 12. Carry in one. In the plasma ashing unit 12, a process of removing the resist pattern on the surface of the wafer W by ashing (ashing) is performed on the wafer W (Step S <b> 1). The processing in the plasma ashing unit 12 is performed according to a recipe selected in accordance with the presence / absence of ion implantation into the surface of the wafer W and the implantation conditions. When the processing in the plasma ashing unit 12 is completed, the wafer W is taken out from the plasma ashing unit 12 by the substrate transfer robot 15, and the wafer W is loaded into one of the two measurement units 14 (step S2). .

  For example, the measurement unit 14 illuminates the surface of the wafer W with light from the illumination optical system, and adheres to the surface of the wafer W by image processing based on reflected light or scattered light from the surface of the wafer W at this time. The measuring device is configured to detect the density of the residue (particles containing the resist (granular) and / or film residue). The measurement unit 14 measures the number of residues (the number of residues) remaining on the surface of the wafer W based on the output of the measurement apparatus (step S3).

  After the measurement of the number of residues, a processing recipe in the chemical solution cleaning unit 13 is selected in accordance with the presence / absence of ion implantation into the surface of the wafer W and the implantation conditions thereof (step S4). The processing conditions defined in the recipe are changed to appropriate conditions according to the measurement result in the measurement unit 14 (step S5). Then, when the wafer W is taken out from the measurement unit 14 by the substrate transfer robot 15 and loaded into one of the two chemical solution cleaning units 13 (step S6), the recipe whose processing conditions have been changed. Accordingly, the process in the chemical cleaning unit 13 is performed on the wafer W (step S7).

  In the chemical solution cleaning unit 13, a jet of droplets of SPM (sulfuric acid / hydrogen peroxide mixture) is supplied to the surface of the wafer W, and a residue including a resist adhering to the surface of the wafer W is removed. The strong oxidizing power of the SPM and the impact when the jet of SPM droplets collide with the surface of the wafer W are excluded from the surface of the wafer W. When the processing in the chemical solution cleaning unit 13 is completed, the wafer W is taken out from the chemical solution cleaning unit 13 by the substrate transport robot 15, and the wafer W is transferred to the indexer robot 21 as a processed wafer W. Then, the processed wafer W is stored in the cassette C by the indexer robot 21.

  FIG. 3 is a schematic cross-sectional view for explaining the configuration of the plasma ashing unit 12. The plasma ashing unit 12 includes a vacuum vessel 121 formed using an aluminum material or the like, a dielectric window 122 provided so as to close the opened upper surface of the vacuum vessel 121, and the vacuum vessel 121 and the dielectric window. An exhaust port 124 for exhausting air from the plasma processing chamber 123 formed by 122, a gas introduction pipe 125 for introducing a processing gas into the plasma processing chamber 123, and a pressure for detecting the pressure in the plasma processing chamber 123 A total 126, a wafer stage 127 placed in the plasma processing chamber 123 for mounting and holding the wafer W, a heater 128 built in the wafer stage 127, and a dielectric window 122 are provided above. A high frequency power supply device (microwave waveguide) for supplying (waveguide) high frequency power such as microwaves toward the dielectric window 122 And a 129.

An exhaust device 41 including a vacuum pump and a valve is connected to the exhaust port 124. By operating the exhaust device 41, the gas in the plasma processing chamber 123 can be exhausted through the exhaust port 124. In addition, the pressure in the plasma processing chamber 123 can be adjusted by controlling the exhaust speed of the exhaust device 41.
A gas introduction device 42 including a valve and a flow rate controller is connected to the gas introduction pipe 125. The gas introduction device 42 is supplied with oxygen-containing gas from the oxygen-containing gas source 421, fluorine-containing gas (fluorine-based gas) from the fluorine-containing gas source 422, and forming gas from the forming gas source 423. In addition, by controlling the opening and closing of valves provided on each gas supply line (oxygen-containing gas supply line, fluorine-containing gas supply line, forming gas supply line) in the gas introduction device 42, plasma is supplied from the gas introduction pipe 125. The type of gas contained in the processing gas introduced into the processing chamber 123 can be changed. Further, by controlling a flow rate controller provided on each gas supply line, the flow rate of the processing gas introduced into the plasma processing chamber 123 from the gas introduction pipe 125 and the concentration of each gas component contained in the processing gas ( Gas mixing ratio) can be changed.

Examples of the oxygen-containing gas include O ₂ , N ₂ O, NO ₂ , CO _{2 and the} like. Examples of the fluorine-containing gas include F ₂ , NF ₃ , SF ₆ , CF ₄ , C ₂ F ₆ , C ₄ F ₈ , CHF ₃ , CH ₂ F ₂ , CH ₃ F, C ₃ F ₈ and S ₂ F. ₂ , SF ₂ , SF ₄ , SOF _{2 and the} like. Furthermore, as a diluent gas for hydrogen used in the forming gas, nitrogen or the like can be used in addition to rare gases such as He, Ne, and Ar.

  A high frequency power supply 43 such as a microwave power supply is connected to the high frequency power supply 129. The high frequency power supply 43 is not limited to a microwave power supply, and may be a VHF power supply, an RF power supply, or the like. In this case, a high frequency power supply using a rod-shaped antenna, a coil, an inductive coupling electrode, a capacitive coupling electrode, or the like is used. High frequency power from the power source 43 can be supplied toward the dielectric window 122.

  The plasma ashing unit 12 includes an ashing control unit 44 having a configuration including a microcomputer. The ashing control unit 44 is provided with a pressure gauge 126 and each gas supply line extending from the oxygen-containing gas source 421, the fluorine-containing gas source 422, and the forming gas source 423 to the gas introduction device 42, and the oxygen-containing gas In addition, detection signals of flow meters 424, 425, and 426 for detecting the flow rates of the fluorine-containing gas and the nitrogen gas are input. The ashing control unit 44 controls the heater 128, the exhaust device 41, the gas introduction device 42, and the high-frequency power source 43 based on each input signal.

  FIG. 4 is a flowchart for explaining processing in the plasma ashing unit 12. The wafer W carried into the plasma processing chamber 123 is placed on the wafer stage 127 with its surface facing upward (step T1). The heater 128 built in the wafer stage 127 is controlled to generate heat at a predetermined temperature before the wafer W is loaded. Thus, when the wafer W is placed on the wafer stage 127, the wafer W is heated to near the heat generation temperature (the predetermined temperature) of the heater 128 by the heat generated from the heater 128 (step T2).

  The heating temperature of the heater 128 may be set, for example, within a range of normal temperature to 400 ° C., and is preferably set within a range of 70 to 250 ° C. Further, when a dense hardened layer is formed on the resist surface layer by ion implantation at a high concentration, in order to prevent contamination of the wafer W due to popping of the resist pattern, the temperature is within a temperature range that does not cause the popping. (For example, 70 to 100 ° C.) is more preferable.

Subsequently, the exhaust of the plasma processing chamber 123 is controlled until the vacuum pump of the exhaust device 41 connected to the exhaust port 124 is controlled, for example, until the atmospheric pressure of the plasma processing chamber 123 becomes 1.33 × 10 ⁻⁷ Pa or less. Is performed (step T3). Thereafter, the gas introduction device 42 is controlled to add, for example, a fluorine-containing gas into the oxygen gas (O ₂ ) so that the concentration thereof is 1% by volume or less from the gas introduction pipe 125 to the plasma processing chamber 123. The obtained mixed gas is introduced as a processing gas (step T4). The flow rate of the processing gas introduced into the plasma processing chamber 123 is controlled within a range of 100 to 6000 sccm, and the pressure in the plasma processing chamber 123 is controlled by controlling the flow rate of the processing gas introduced and the exhaust flow rate by the exhaust device 41. It is maintained within the range of 5 to 400 Pa.

Note that the processing gas may be a gas containing at least oxygen (atom). However, in the case of a resist having low ashing resistance such as a resist implanted with high dose ions, for example, hydrogen gas (H ₂ ) is used. A forming gas diluted with an inert gas such as nitrogen, argon, helium, neon, krypton, xenon or the like so that the concentration is 4% by volume or less is supplied to the gas introducing device 42, and a fluorine-containing gas By using a mixed gas obtained by mixing a fluorine-containing gas, a forming gas, and an oxygen gas as a processing gas so that the concentration of is 1% by volume or less and the concentration of the forming gas is 50% by volume or less, Ashing with little residue can be performed without damaging the wafer W.

  In this way, the microwave as high frequency power is output from the high frequency power supply 43 in a state where the plasma processing chamber 123 is filled with the processing gas (step T5). The microwave is guided to the dielectric window 122 by the high-frequency power supplier 129, further passes through the dielectric window 122, and is radiated to the plasma processing chamber 123. The high-density plasma of the processing gas is excited in the plasma processing chamber 123 by the energy of the radiated microwave, and the oxygen active species generated by this high-density plasma is formed on the surface of the wafer W. When the pattern is reached, the resist pattern is ashed.

  When the microwave output is continued for a predetermined time (YES in step T6), the microwave output from the high frequency power supply 43 is stopped (step T7), and the processing gas from the gas introduction pipe 125 to the plasma processing chamber 123 is stopped. The introduction is stopped (step T8). Even after the introduction of the processing gas is stopped, the exhaust of the plasma processing chamber 123 by the exhaust device 41 is continued in order to remove the processing gas (residual gas) remaining in the plasma processing chamber 123 (step T9). Thereafter, when the plasma processing chamber 123 is almost in a vacuum state, the gas introduction device 42 is controlled, and nitrogen gas is introduced from the gas introduction pipe 125 into the plasma processing chamber 123 (step T10). When the atmospheric pressure in the plasma processing chamber 123 rises to normal pressure, the introduction of nitrogen gas into the plasma processing chamber 123 is stopped, and the wafer W from which the resist pattern has been removed by ashing is removed from the plasma processing chamber 123. (Step T11).

  The surface state of the wafer W after processing in the plasma ashing unit 12 (the number of residues adhering to the surface of the wafer W) depends on the composition of the processing gas introduced into the plasma processing chamber 123, the plasma processing chamber at the time of plasma excitation. It varies depending on the atmospheric pressure of 123, the output of microwave (electric energy), the temperature of the wafer W, and the processing time by plasma. Therefore, by changing at least one of these as parameters, the number of residues attached to the surface of the wafer W after processing in the plasma ashing unit 12 can be controlled.

  FIG. 5 is a schematic cross-sectional view for explaining the configuration of the chemical liquid cleaning unit 13. The chemical cleaning unit 13 includes a spin chuck 132 for rotating the wafer W while holding the wafer W substantially horizontally in the chemical processing chamber 131 partitioned by a partition, and an SPM on the surface of the wafer W held by the spin chuck 132. A two-fluid spray nozzle 133 for supplying a jet of droplets and a cup 134 for receiving a processing liquid such as SPM that flows down or scatters from the wafer W are provided.

For example, the spin chuck 132 can hold the wafer W in a substantially horizontal posture by holding the wafer W with a plurality of holding members. The spin chuck 132 is applied with a rotational force from the rotational drive mechanism 51, whereby the wafer W held by the plurality of clamping members can be rotated while maintaining a substantially horizontal posture. .
The two-fluid spray nozzle 133 has an SPM supply pipe 52 for supplying SPM (H ₂ SO ₄ + H ₂ O ₂ ) whose temperature is adjusted to a predetermined temperature, and high-pressure nitrogen gas (N ₂ from a nitrogen gas supply source). ) Is connected to a high-pressure nitrogen gas supply pipe 53. When SPM and high-pressure nitrogen gas are simultaneously supplied to the two-fluid spray nozzle 133, the SPM and high-pressure nitrogen gas are mixed to form fine SPM droplets, and these SPM droplets become jets. The two-fluid spray nozzle 133 is discharged. An SPM supply valve 54 for controlling the supply of SPM to the two-fluid spray nozzle 133 is interposed in the middle of the SPM supply pipe 52. A high-pressure nitrogen gas supply valve 55 for controlling supply of nitrogen gas to the two-fluid spray nozzle 133 is interposed in the middle of the high-pressure nitrogen gas supply pipe 53.

  Further, the two-fluid spray nozzle 133 has a basic form as a scan nozzle that can change the supply position of the liquid droplets in a range including at least the range from the rotation center of the wafer W to the peripheral portion thereof. Specifically, on the side of the spin chuck 132, a swivel shaft 135 is disposed substantially along the vertical direction, and the two-fluid spray nozzle 133 is a nozzle that extends substantially horizontally from the upper end of the swivel shaft 135. It is attached to the tip of the arm 136. A driving force is applied to the turning shaft 135 from the turning drive mechanism 56. By rotating the turning shaft 135 back and forth within a predetermined angle range, the upper portion of the wafer W held by the spin chuck 132 is moved upward. Thus, the nozzle arm 136 can be swung, and along with this, the supply position of the jet of droplets from the two-fluid spray nozzle 133 is scanned (moved) on the surface of the wafer W held by the spin chuck 132. Can be made.

Furthermore, the chemical solution cleaning unit 13 includes a cleaning control unit 57 having a configuration including a microcomputer. The cleaning control unit 57 controls the rotation drive mechanism 51 and the turning drive mechanism 56 during the processing on the wafer W, and controls the opening and closing of the SPM supply valve 54 and the high-pressure nitrogen gas supply valve 55.
When the wafer W is delivered to the spin chuck 132, first, the rotation drive mechanism 51 is controlled to rotate the wafer W held on the spin chuck 132 at a predetermined rotation speed. In addition, the swivel drive mechanism 56 is controlled so that the two-fluid spray nozzle 133 is disposed from the standby position set outside the cup 134 to the processing start position set above the wafer W held by the spin chuck 132. .

  Subsequently, the SPM supply valve 54 and the high-pressure nitrogen gas supply valve 55 are opened. As a result, SPM and high-pressure nitrogen gas are supplied to the two-fluid spray nozzle 133, and a jet of SPM droplets is discharged from the two-fluid spray nozzle 133. On the other hand, the supply position (SPM supply position) on the surface of the wafer W to which the jet of droplets from the two-fluid spray nozzle 133 is guided by controlling the turning drive mechanism 56 is from the rotation center of the wafer W to the wafer W. It moves while drawing an arc-shaped trajectory within the range that reaches the peripheral edge of. As a result, the residue adhering to the surface of the wafer W is removed from the surface of the wafer W by the strong oxidizing power of the SPM and the impact when the jet of SPM droplets collides with the surface of the wafer W.

  When the SPM supply position on the surface of the wafer W is reciprocated a predetermined number of times, the SPM supply valve 54 and the high-pressure nitrogen gas supply valve 55 are closed, and the two-fluid spray nozzle 133 is set to the standby position set outside the cup 134. Returned. Thereafter, DIW (deionized pure water) is supplied to the surface of the wafer W, and SPM adhering to the surface of the wafer W is washed away by the DIW. When the supply of DIW is continued for a certain period of time, the supply of DIW is stopped, and then the rotation drive mechanism 51 is controlled to rotate the wafer W at a high rotation speed (for example, 3000 rpm) and adhere to the wafer W. The DIW is shaken off by centrifugal force and dried. When this processing is completed, the rotation drive mechanism 51 is controlled to stop the rotation of the wafer W by the spin chuck 132, and then the processed wafer W is unloaded from the chemical processing chamber 131.

  The removal rate of residues and the damage to the surface of the wafer W due to the processing in the chemical cleaning unit 13 are the number of reciprocating scans of the SPM supply position on the surface of the wafer W (hereinafter simply referred to as “SPM scan number”), two-fluid spray. It varies depending on the supply flow rate (supply pressure) of the high-pressure nitrogen gas to the nozzle 133, the SPM composition, the SPM temperature, and the like. Therefore, depending on the surface state of the wafer W after processing in the plasma ashing unit 12 (the number of residues adhering to the surface of the wafer W), the number of SPM reciprocating scans on the surface of the wafer W or the flow to the two-fluid spray nozzle 133 By controlling the supply flow rate of the high-pressure nitrogen gas and the like, it is possible to obtain a wafer W on which no residue is attached and which is not damaged.

  FIG. 6 is a block diagram showing an electrical configuration of the entire substrate processing apparatus. This substrate processing apparatus includes a measurement apparatus provided in the measurement unit 14 in addition to an ashing control unit 44 for controlling the operation of the plasma ashing unit 12 and a cleaning control unit 57 for controlling the operation of the chemical solution cleaning unit 13. Based on the detected signal, a measurement data calculation unit 61 that calculates the number (total number) of residues adhering to the surface of the wafer W, and a reference data storage unit 62 that stores reference data created in advance. Referring to the reference data stored in the reference data storage unit 62, data for acquiring the processing conditions in the chemical solution cleaning unit 13 according to the calculation result of the measurement data calculation unit 61 (measurement result of the measurement unit 14) And a comparison unit 63.

For example, as shown in FIG. 7, the reference data stored in the reference data storage unit 62 divides the number of residues having a particle size of 0.1 μm or more into appropriate 11 ranges, and an appropriate SPM for each range. It is data in a table format created by determining the number of round-trip scans and associating them.
When the number of residues attached to the surface of the wafer W to be measured by the measurement unit 14 is calculated by the measurement data calculation unit 61, the data comparison unit 63 refers to the reference data and calculates the calculated residue. A range to which the number belongs is recognized, and the number of SPM round-trip scans associated with this range is acquired. For example, if the number of residues adhering to the surface of the wafer W is 50, the SPM reciprocating scan count “2” associated with the range “40 to 60” is acquired from the reference data. If the number of residues adhering to the surface of the wafer W is 3500, the number of SPM reciprocating scans “4” associated with the range “1000 to 5000” is acquired from the reference data. Then, the data comparison unit 63 provides the cleaning control unit 57 with data on the number of SPM reciprocating scans acquired in this way.

  In response to this, the cleaning control unit 57 changes the number of SPM reciprocating scans defined in the recipe to the number of SPM reciprocating scans according to the data given from the data comparison unit 63, and according to the recipe after the change, Control for processing in the chemical cleaning unit 13 is performed. Thereby, in the chemical solution cleaning unit 13, the reciprocal scan of the SPM supply position on the surface of the wafer W is performed an appropriate number of times according to the number of residues adhering to the surface of the wafer W. Therefore, the residue adhering to the surface of the wafer W can be satisfactorily removed without damaging the surface of the wafer W.

If the SPM reciprocating scan number is changed, the processing time in the chemical solution cleaning unit 13 is changed accordingly. Therefore, it can be said that the change of the SPM reciprocating scan number is substantially the same as the processing time in the chemical solution cleaning unit 13.
In this embodiment, the case where the number of SPM reciprocation scans in the processing by the chemical cleaning unit 13 is changed according to the number of residues attached to the surface of the wafer W after processing in the plasma ashing unit 12 has been described as an example. However, other conditions of the process performed in the chemical solution cleaning unit 13 may be changed. For example, the supply flow rate of the high-pressure nitrogen gas to the two-fluid spray nozzle 133 may be changed.

  Further, in this embodiment, a description will be given by taking up a configuration in which the processing of the chemical cleaning unit 13 is controlled in a feedforward manner based on the number of residues attached to the surface of the processed wafer W in the plasma ashing unit 12. However, in addition to this, the processing in the plasma ashing unit 12 (processing for the next wafer W of the wafer W) is based on the number of residues attached to the surface of the wafer W after processing in the plasma ashing unit 12. And may be controlled in a feedback manner. Specifically, processing conditions in the plasma ashing unit 12 (composition of processing gas introduced into the plasma processing chamber 123, pressure in the plasma processing chamber 123 at the time of plasma excitation, microwave output, temperature of the wafer W, and processing by plasma) Reference data for appropriately setting at least one condition of time) is stored in the reference data storage unit 62, and the calculation result (measurement unit 14) of the measurement data calculation unit 61 calculated by the data comparison unit 63 is stored. If the measurement result of (1) is fluctuated, the processing conditions to be adjusted and the adjustment range to be corrected based on the reference data are acquired, and further, the acquisition is performed as shown by a two-dot chain line in FIG. The processed condition adjustment data is given to the ashing control unit 44, so that the processing recipe of the plasma ashing unit 12 can be changed. May be content is changed. By doing so, the number of residues adhering to the surface of the wafer W after the processing can be suppressed to be small without damaging the surface of the wafer W by the processing in the plasma ashing unit 12.

FIG. 8 is a block diagram showing an electrical configuration of a substrate processing apparatus according to another embodiment of the present invention. In FIG. 8, parts having the same functions as those shown in FIG. 6 are denoted by the same reference numerals as in FIG.
In this embodiment, the plasma ashing unit 12 is provided with a measuring device 81 that outputs a detection signal corresponding to the film thickness of the resist pattern on the surface of the wafer W. As such a measuring device 81, an optical interference type film thickness measuring device or an exhaust port provided on the exhaust line between the exhaust port 124 (see FIG. 3) and the exhaust device 41 (see FIG. 3) is used. A quadrupole mass spectrometer (common name: Q-MASS) that detects the composition of the exhaust gas from 124 can be used. The detection signal of the measurement device 81 is input to the measurement data calculation unit 82, and the measurement data calculation unit 82 performs wafer processing during processing in the plasma ashing unit 12 based on the input signal from the measurement device 81. The film thickness of the resist pattern remaining on the surface of W is obtained (in-situ film thickness measurement). When a quadrupole mass spectrometer is employed as the measuring device 81, a measurement data calculation unit is obtained from the time-dependent change data of the ashed resist component contained in the exhaust from the exhaust port 124 detected by the measuring device 81. 82, the progress of the ashing of the resist pattern due to the processing in the plasma ashing unit 12 is estimated, and the film thickness of the resist pattern may be obtained based on this.

Further, referring to the reference data storage unit 83 storing reference data created in advance and the reference data stored in the reference data storage unit 83, each process in the chemical solution cleaning unit 13 and the plasma ashing unit 12 is performed. And a data comparison unit 84 for acquiring time.
For example, as shown in FIG. 9, the reference data stored in the reference data storage unit 83 divides the film thickness (residual film thickness) of the resist pattern remaining on the surface of the wafer W into appropriate six ranges. For each range, an appropriate processing time in the chemical cleaning unit 13 (processing time in which the resist pattern can be completely removed from the surface of the wafer W without damaging the surface of the wafer W. Hereinafter, simply “ This is data of a resist film thickness-processing time table created by determining “SPM processing time” for each SPM temperature.

FIG. 10 is a flowchart for explaining the operation of the substrate processing apparatus shown in FIG. When the wafer W is loaded into the plasma ashing unit 12 and processing for the wafer W is started, counting of the elapsed time t1 from the start of processing is started simultaneously with the start of the processing (step E1).
When the processing for the wafer W in the plasma ashing unit 12 is started, the measurement data calculation unit 82 obtains the film thickness of the resist pattern remaining on the surface of the wafer W based on the input signal from the measurement device 81. (Step E2). Then, when the film thickness of the resist pattern is obtained by the measurement data calculation unit 82, the data comparison unit 84 refers to the reference data stored in the reference data storage unit 83, and the obtained film thickness is obtained. The SPM processing time corresponding to the temperature of the SPM used in the chemical solution cleaning unit 13 is acquired from the SPM processing time associated with this range (step E3). . For example, if the film thickness of the resist pattern remaining on the surface of the wafer W is 15 nm and the temperature of the SPM used in the chemical cleaning unit 13 is 80 ° C., the range is “10 to 50 nm” and the temperature is 80 ° C. The acquired SPM processing time “100 sec” is acquired. Further, if the film thickness of the resist pattern remaining on the surface of the wafer W is 320 nm and the temperature of the SPM used in the chemical solution cleaning unit 13 is 100 ° C., the range corresponds to “200 to 500 nm” and the temperature of 100 ° C. The obtained SPM processing time “300 sec” is acquired.

  Thereafter, it is checked whether or not the elapsed time t1 from the start of processing exceeds the SPM processing time t2 acquired by the data comparison unit 84 (step E4). If the elapsed time t1 does not exceed the SPM processing time t2, the film thickness of the resist pattern is obtained again by the measurement data calculation unit 82, and the SPM processing time t2 corresponding to the film thickness is acquired by the data comparison unit 84. The That is, the SPM processing time t2 is repeatedly acquired until the elapsed time t1 from the start of processing exceeds the SPM processing time t2.

  When the elapsed time t1 from the start of processing exceeds the SPM processing time t2, the processing in the plasma ashing unit 12 is completed while the resist pattern remains in the film state on the surface of the wafer W. Then, the wafer W is taken out from the plasma ashing unit 12, and the wafer W is carried into the chemical solution cleaning unit 13 (step E5). Further, the data of the SPM processing time t2 last acquired by the data comparison unit 84 is given to the cleaning control unit 57. In response to this, the cleaning control unit 57 changes the processing time determined by the processing recipe in the chemical cleaning unit 13 to the SPM processing time t2 corresponding to the data given from the data comparison unit 84, and the change. Control for processing in the chemical cleaning unit 13 is performed in accordance with a later recipe. Thereby, in the chemical cleaning unit 13, the process for the wafer W is performed over the SPM processing time t2 (step E6). Since the SPM processing time t2 is appropriately determined according to the film thickness of the resist pattern remaining on the surface of the wafer W, the plasma ashing unit is performed by performing the processing in the chemical cleaning unit 13 over the SPM processing time t2. The resist pattern remaining in the film state on the surface of the wafer W at the time of unloading from the wafer 12 is cleanly removed from the surface of the wafer W without damaging the surface of the wafer W.

As described above, even with the configuration of this embodiment, an unnecessary resist pattern can be satisfactorily removed from the surface of the wafer W without damaging the surface of the wafer W.
In addition, since the processing in the plasma ashing unit 12 for the wafer W is performed for the same time as the time for which the wafer W is subsequently processed in the chemical cleaning unit 13 (SPM processing time t2), plasma ashing is performed as in this embodiment. If the number of units in the unit 12 (two) and the number of units in the chemical solution cleaning unit 13 (two) are the same, the plasma ashing unit is almost simultaneously with the removal of the processed wafer W from the chemical solution cleaning unit 13. The wafer W is unloaded from 12 and the unloaded wafer W can be immediately loaded into the chemical solution cleaning unit 13. Therefore, the substrate processing apparatus can be operated most efficiently, and the number of wafers processed per unit time can be dramatically increased.

When the number of units of plasma ashing unit 12 (two) and the number of units of chemical cleaning unit 13 (two) are different, the ratio between the processing time in plasma ashing unit 12 and the processing time in chemical cleaning unit 13 Each processing time may be set so that is opposite to the ratio of the number of units.
FIG. 11 is a conceptual diagram for explaining still another embodiment of the present invention. In this embodiment, before the processing in the plasma ashing unit 12 is performed on the wafer W, the wafer W is loaded into the chemical cleaning unit 13, and the wafer W is pre-cleaned by the chemical cleaning unit 13. Is called. Further, the wafer W after the pre-cleaning process is carried into a measuring unit 14A provided with, for example, an optical interference type film thickness measuring device. The resist pattern formed on the surface of the wafer W is slightly removed by the pre-cleaning process, and the film thickness of the slightly thinned resist pattern is measured by the measurement unit 14A.

  Then, according to the measurement result by the measurement unit 14A, the processing conditions of the plasma ashing unit 12 (the composition of the processing gas introduced into the plasma processing chamber 123, the pressure in the plasma processing chamber 123 during plasma excitation, the output of the microwave, the wafer The processing of the plasma ashing unit 12 is controlled in a feed-forward manner by appropriately setting at least one of the W temperature and the plasma processing time. More specifically, in the plasma ashing unit 12, a process that can reduce the number of residues attached to the surface of the processed wafer W to a certain number or less without damaging the surface of the wafer W. Conditions are set, and processing according to the set processing conditions is performed. Thus, the number of residues attached to the surface of the wafer W after the processing can be reduced without damaging the surface of the wafer W by the processing in the plasma ashing unit 12.

  In addition, the wafer W after processing in the plasma ashing unit 12 is carried into the measuring unit 14 and the number of residues attached to the surface of the wafer W is measured. Based on the measurement result, a chemical solution to be subsequently performed is measured. Processing on the wafer W in the cleaning unit 13 is controlled in a feed-forward manner. Thereby, the residue remaining on the surface of the processed wafer W in the plasma ashing unit 12 can be removed in the chemical solution cleaning unit 13 without damaging the surface of the wafer W.

Note that the pre-cleaning process by the chemical solution cleaning unit 13 is not necessarily a necessary process, and the pre-cleaning process is omitted, and is transferred from the indexer robot 21 (see FIG. 1) to the substrate transport robot 15 (see FIG. 1). The unprocessed wafer W may be immediately carried into the measurement unit 14A.
Even in the configuration of this embodiment, the processing in the plasma ashing unit 12 (processing for the next wafer W of the wafer W) is the measurement result of the measuring unit 14 (the processing of the wafer W after processing in the plasma ashing unit 12). The number of residues attached to the surface may be controlled in a feedback manner. In such a case, the value set based on the measurement result by the measurement unit 14A differs from the value set based on the measurement result by the measurement unit 14 for a certain condition of processing in the plasma ashing unit 12 The average value of these two values may be employed, or the value of the two values that results in a shorter processing time in the entire substrate processing apparatus may be employed.

As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, in the chemical cleaning unit 13, it is assumed that a jet of SPM droplets is supplied to the surface of the wafer W, but the surface of the wafer W is not mixed with nitrogen gas (not in the state of droplet jets). May be supplied. In this case, the SPM composition, the SPM temperature, the SPM supply time, and the like may be changed based on the measurement result by the measurement unit 14 as the processing conditions in the chemical solution cleaning unit 13. In addition to SPM, other types of chemicals such as APM (ammonia-hydrogen peroxide mixture) or HF / O ₃ (fluoric acid ozone) may be used. As a processing condition in the unit 13, the composition of the chemical solution, the temperature of the chemical solution, the supply time of the chemical solution, and the like may be changed based on the measurement result by the measurement unit 14.

  Furthermore, the measurement unit 14 measures the number of residues attached to the surface of the wafer W. However, when the resist remains in a film state on the surface of the wafer W after the processing in the plasma ashing unit 12. The structure provided with the optical interference type film thickness measuring device is adopted as the measuring unit 14, the film thickness of the resist film remaining on the surface of the wafer W is measured, and the chemical solution cleaning is performed based on the measurement result. Processing conditions in the unit 13 and processing conditions in the plasma ashing unit 12 may be set.

Further, the substrate to be processed is not limited to the wafer W as long as the resist is formed on the surface thereof, but is not limited to the wafer W, the glass substrate for the liquid crystal display device, the glass substrate for the plasma display panel, the glass substrate for the photomask, and the magnetic substrate. / Other types of substrates such as an optical disk substrate may be used.
In addition, various design changes can be made within the scope of matters described in the claims.

It is the simplified top view which shows the layout of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the whole operation | movement by said board | substrate processing apparatus. It is an illustration sectional view for explaining the composition of a plasma ashing part. It is a flowchart for demonstrating the process in a plasma ashing part. It is an illustration sectional view for explaining the composition of a chemical solution washing part. It is a block diagram which shows the electrical structure of said whole substrate processing apparatus. It is a figure which shows the content of the reference data for setting the process conditions in the chemical | medical solution washing | cleaning part according to the number of residues. It is a block diagram which shows the electric constitution of the substrate processing apparatus which concerns on other embodiment of this invention. It is a figure which shows the content of the reference data for setting the processing time in the chemical | medical solution washing | cleaning part according to a resist film thickness. It is a flowchart for demonstrating operation | movement of the substrate processing apparatus shown in FIG. It is a conceptual diagram for demonstrating other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing part 12 Plasma ashing part 13 Chemical solution washing part 14 Measuring part 14A Measuring part 41 Exhaust device 42 Gas introducing device 43 High frequency power supply 44 Ashing control part 52 SPM supply pipe 56 Turning drive mechanism 57 Cleaning control part 63 Data comparison part 81 Measurement Device 84 Data comparison unit 122 Dielectric window 123 Plasma processing chamber 124 Exhaust port 125 Gas introduction pipe 127 Wafer stage 128 Heater 129 High frequency power supply 133 Two-fluid spray nozzle 135 Swivel axis 136 Nozzle arm 421 Oxygen-containing gas source 422 Fluorine-containing gas Source 423 Forming gas source W Wafer

Claims (22)

A plasma ashing process for ashing and removing the resist on the substrate by plasma of a processing gas containing at least oxygen;
After the plasma ashing treatment process is completed, a treatment liquid is supplied onto the substrate, and a removal treatment process for removing a removal target on the substrate;
Before the start of this removal processing step, a removal object state measuring step for measuring the state of the removal object on the substrate,
A removal processing condition setting step for setting processing conditions in the removal processing step for the substrate based on the state of the removal target on the substrate measured in the removal target state measurement step,
The removal treatment step supplies a jet of droplets of the treatment liquid formed by colliding the treatment liquid and gas onto the substrate, and removes the residue including the resist remaining on the substrate as a removal target. Process
The removal object state measurement step is a step of measuring the number of the residues,
The removal treatment condition setting step sets a gas supply flow rate or a supply pressure for forming a jet of droplets of the treatment liquid based on the number of residues on the substrate measured in the removal object state measurement step. A substrate processing method characterized by comprising the steps of:   In the plasma ashing treatment step, a plasma of the processing gas is generated using a mixed gas containing at least oxygen gas and a fluorine-based gas, the concentration of the fluorine-based gas being 1% by volume or less, and the plasma. The substrate processing method according to claim 1, wherein the step of ashing and removing the resist on the substrate is performed.   The plasma ashing treatment step includes at least oxygen gas, fluorine-based gas, and forming gas obtained by diluting hydrogen gas with an inert gas so that the concentration thereof is 4% by volume or less, and the concentration of the fluorine-based gas is Using a mixed gas of 1% by volume or less and a forming gas concentration of 50% by volume or less as a processing gas, plasma of the processing gas is generated, and the resist on the substrate is ashed and removed by the plasma. The substrate processing method according to claim 1, wherein the substrate processing method comprises:   In the plasma ashing treatment step, the processing gas is exhausted while being supplied at a predetermined flow rate in the range of 100 to 6000 sccm into the plasma processing chamber in which the substrate to be processed is accommodated, and the atmospheric pressure in the plasma processing chamber is set to 5. A process gas plasma is generated in a state maintained within a range of ˜400 Pa, and the resist on the substrate is ashed and removed by the plasma. 4. The substrate processing method as described.   5. The substrate processing method according to claim 1, wherein the plasma ashing treatment step is performed in a state in which a temperature of a substrate to be processed is maintained within a range of room temperature to 400 ° C. 6.   6. The removal treatment step according to claim 1, wherein the removal treatment step is a step of supplying a mixed solution of sulfuric acid and hydrogen peroxide solution onto the substrate to remove an object to be removed on the substrate. The substrate processing method as described in 2. above. Based on the state of the removal object on the substrate measured in the removal object state measurement step, the feedback ashing treatment condition setting for setting the processing conditions in the plasma ashing treatment step for the next substrate of the substrate is performed. the substrate processing method according to any one of claims 1 to 6, further comprising a step. The removal object state measurement step is performed in the middle of the plasma ashing treatment step,
The removal processing condition setting step is a step of setting the execution time of the removal processing step for the substrate based on the state of the removal target on the substrate measured in the removal target state measurement step.
The substrate processing method is a plasma in which the execution time of the plasma ashing treatment process is set based on the execution time of the removal treatment process set in the removal treatment condition setting step in the middle of the plasma ashing treatment process. the substrate processing method according to any one of claims 1 to 6, further comprising a ashing time setting step. Before the start of the plasma ashing process, a pre-removal object state measurement process for measuring the state of the removal object on the substrate;
A feedforward ashing treatment condition setting step for setting processing conditions in the plasma ashing treatment step for the substrate based on the state of the removal object on the substrate measured in the pre-removal object state measurement step; the substrate processing method according to any one of claims 1 to 8, further comprising a. The process according to any one of claims 1 to 9 , further comprising a pre-treatment step of supplying a treatment liquid onto a substrate to be subjected to the plasma ashing treatment in the plasma ashing treatment step prior to the plasma ashing treatment step. A substrate processing method according to claim 1. Before the start of the plasma ashing process, a pre-removal object state measurement process for measuring the state of the removal object on the substrate;
Based on the state of the removal object on the substrate measured in the pre-removal object state measurement step, a pre-processing condition setting step for setting processing conditions in the pre-processing step for the next substrate of the substrate; The substrate processing method according to claim 10, further comprising: A plasma processing chamber for accommodating a substrate to be processed, a processing gas introducing means for introducing a processing gas containing at least oxygen into the plasma processing chamber, and a microwave radiated toward the plasma processing chamber into which the processing gas has been introduced A plasma ashing means for performing plasma ashing treatment for ashing and removing the resist on the substrate using plasma, and plasma excitation means for exciting the plasma of the processing gas;
A removal treatment means for supplying a treatment liquid onto the substrate after the plasma ashing treatment by the plasma ashing treatment means, and executing a removal treatment for removing the removal target on the substrate;
Before the start of the removal process by the removal processing means, the removal object state measuring means for measuring the state of the removal object on the substrate;
A removal processing condition setting means for setting conditions for the removal processing by the removal processing means for the substrate based on the state of the removal object on the substrate measured by the removal object state measurement means,
The removal object state measuring means measures the number of residues including the resist remaining on the substrate,
The removal processing means includes jet supply means for supplying a jet of droplets of the processing liquid formed by colliding the processing liquid and gas onto the substrate,
The removal treatment condition setting means sets the gas supply flow rate or supply pressure to the jet supply means based on the number of residues on the substrate measured by the removal object state measurement means. A substrate processing apparatus. The process gas introducing means is characterized in that it includes at least an oxygen gas and a fluorine-based gas, and is introduced into the plasma processing chamber as a mixed gas having a fluorine-based gas concentration of 1% by volume or less. 12. The substrate processing apparatus according to 12 . The processing gas introduction means includes at least an oxygen gas, a fluorine-based gas, and a forming gas obtained by diluting a hydrogen gas with an inert gas so that its concentration is 4% by volume or less, and the concentration of the fluorine-based gas is 1 13. The substrate processing apparatus according to claim 12 , wherein a mixed gas having a volume% or less and a forming gas concentration of 50 volume% or less is introduced into the plasma processing chamber as a process gas. Exhaust means for exhausting the gas in the plasma processing chamber;
During the plasma ashing processing by the plasma ashing processing means, the processing gas introduction means and the exhaust means are controlled to supply the processing gas into the plasma processing chamber at a predetermined flow rate in the range of 100 to 6000 sccm. evacuated, the substrate processing apparatus according to any one of claims 12 to 14, further comprising a pressure control means for maintaining the pressure of the plasma processing chamber in the range of 5～400Pa. A substrate mounting table provided in the plasma processing chamber, on which a substrate to be processed is mounted;
Substrate heating means for heating the substrate mounted on the substrate mounting table;
In the plasma ashing treatment by the plasma ashing treatment means, the substrate heating means is controlled to keep the temperature of the substrate placed on the substrate mounting table within the range of room temperature to 400 ° C. 16. The substrate processing apparatus according to claim 12 , further comprising an hourly substrate temperature control means. The removal processing means, the substrate processing apparatus according to any one of claims 12 to 16, characterized in that it comprises a SPM supply means for supplying a mixed solution of sulfuric acid and hydrogen peroxide on the substrate . Based on the state of the removal object on the substrate measured by the removal object state measuring means, a feedback ashing process for setting the conditions of the plasma ashing treatment by the plasma ashing treatment means for the next substrate of the substrate the substrate processing apparatus according to any one of claims 12 to 17, further comprising a condition setting means. The removal object state measuring means is for measuring the state of the removal object on the substrate during the plasma ashing process.
The removal processing condition setting means sets the execution time of the removal processing by the removal processing means for the substrate based on the state of the removal target on the substrate measured by the removal target state measurement means. ,
The substrate processing apparatus sets the execution time of the plasma ashing process based on the execution time of the removal process set by the removal process condition setting unit during the plasma ashing process by the plasma ashing process unit. the substrate processing apparatus according to any one of claims 12 to 17, further comprising a plasma ashing processing time setting means for. Before the start of the plasma ashing treatment by the plasma ashing treatment means, pre-removal object state measuring means for measuring the state of the removal object on the substrate;
Based on the state of the removal object on the substrate measured by the pre-removal object state measurement means, the feed forward ashing treatment condition setting for setting the conditions of the plasma ashing treatment by the plasma ashing treatment means for the substrate the substrate processing apparatus according to any one of claims 12 to 19, further comprising a means. Prior to the plasma ashing step by the plasma ashing means, any of claims 12 to 20, characterized in that it further comprises a pre-processing means for supplying the processing liquid onto the substrate to be subjected to the plasma ashing A substrate processing apparatus according to claim 1. Before the start of the plasma ashing treatment by the plasma ashing treatment means, pre-removal object state measuring means for measuring the state of the removal object on the substrate;
Pre-processing condition setting means for setting processing conditions by the pre-processing means for the next substrate of the substrate based on the state of the removal object on the substrate measured by the pre-removal object state measuring means; The substrate processing apparatus according to claim 21 , further comprising:

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