JPS572585A - Forming method for aluminum electrode - Google Patents

Forming method for aluminum electrode

Info

Publication number
JPS572585A
JPS572585A JP7550380A JP7550380A JPS572585A JP S572585 A JPS572585 A JP S572585A JP 7550380 A JP7550380 A JP 7550380A JP 7550380 A JP7550380 A JP 7550380A JP S572585 A JPS572585 A JP S572585A
Authority
JP
Japan
Prior art keywords
plasma
pattern
gas
aluminum electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7550380A
Other languages
Japanese (ja)
Inventor
Shinya Iida
Tatsumi Mizutani
Hideo Komatsu
Akitsuna Yuhara
Fumio Okazaki
Tatsuo Toyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7550380A priority Critical patent/JPS572585A/en
Publication of JPS572585A publication Critical patent/JPS572585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

Abstract

PURPOSE:To eliminate the partial corrosion of a pattern by forming the pattern by plasma by etching, and then treating the surface of a specimen to be etched by gas plasma containing oxygen. CONSTITUTION:A pattern is formed of aluminum electrode by utilizing gas plasma on an oxide containing Li. In this case, the pattern is formed by plasma etching, and the surface of the specimen to be etched is treated by gas plasma containing oxygen in the same treating chamber in which the plasma etching is carried out or in another pressure reduced chamber. The gas containing oxygen is, for example, a mixture gas of oxygen and Freon.
JP7550380A 1980-06-06 1980-06-06 Forming method for aluminum electrode Pending JPS572585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7550380A JPS572585A (en) 1980-06-06 1980-06-06 Forming method for aluminum electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7550380A JPS572585A (en) 1980-06-06 1980-06-06 Forming method for aluminum electrode

Publications (1)

Publication Number Publication Date
JPS572585A true JPS572585A (en) 1982-01-07

Family

ID=13578111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7550380A Pending JPS572585A (en) 1980-06-06 1980-06-06 Forming method for aluminum electrode

Country Status (1)

Country Link
JP (1) JPS572585A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142744A (en) * 1984-12-17 1986-06-30 Sony Corp Etching gas and etching method using said gas
JPH0198227A (en) * 1987-10-09 1989-04-17 Alps Electric Co Ltd Manufacture of thin-film transistor
JPH02224233A (en) * 1989-02-27 1990-09-06 Hitachi Ltd Sample treatment method end device
JPH08335571A (en) * 1996-01-29 1996-12-17 Hitachi Ltd Plasma treatment apparatus
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
US6989228B2 (en) 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347664A (en) * 1976-10-12 1978-04-28 Mitsubishi Electric Corp Position indicating system for elevator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347664A (en) * 1976-10-12 1978-04-28 Mitsubishi Electric Corp Position indicating system for elevator

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142744A (en) * 1984-12-17 1986-06-30 Sony Corp Etching gas and etching method using said gas
JPH0198227A (en) * 1987-10-09 1989-04-17 Alps Electric Co Ltd Manufacture of thin-film transistor
JPH02224233A (en) * 1989-02-27 1990-09-06 Hitachi Ltd Sample treatment method end device
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
US5952245A (en) * 1989-02-27 1999-09-14 Hitachi, Ltd. Method for processing samples
US6989228B2 (en) 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples
US7132293B2 (en) 1989-02-27 2006-11-07 Hitachi, Ltd. Method and apparatus for processing samples
JPH08335571A (en) * 1996-01-29 1996-12-17 Hitachi Ltd Plasma treatment apparatus

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