CN113566982B

CN113566982B - Infrared detector with microbridge structure

Info

Publication number: CN113566982B
Application number: CN202110783303.5A
Authority: CN
Inventors: 翟光杰; 武佩; 潘辉; 翟光强
Original assignee: Beijing North Gaoye Technology Co ltd
Current assignee: Beijing North Gaoye Technology Co ltd
Priority date: 2021-07-12
Filing date: 2021-07-12
Publication date: 2022-05-24
Anticipated expiration: 2041-07-12
Also published as: CN113566982A

Abstract

The utility model relates to a microbridge structure infrared detector, CMOS measurement circuitry and CMOS infrared sensing structure in the infrared detector all use CMOS technology preparation, CMOS manufacturing process includes metal interconnection technology, through-hole technology, IMD technology and RDL technology, in multilayer structure's infrared detector, first column structure includes at least one deck solid columnar structure and/or at least one deck hollow columnar structure, second column structure includes at least one deck solid columnar structure and/or at least one deck hollow columnar structure, the sacrificial layer is used for making CMOS infrared sensing structure form hollow out construction, the material that constitutes the sacrificial layer includes at least one in silicon, germanium or germanium silicon, adopt the etching gas and adopt post-CMOS technology to corrode the sacrificial layer, the etching gas includes at least one in xenon fluoride, chlorine, bromine gas, carbon tetrachloride and fluorine chlorine substituted hydrocarbon. Through the technical scheme disclosed by the invention, the problems of low performance, low pixel scale, low yield and poor consistency of the traditional MEMS process infrared detector are solved.

Description

Infrared detector with microbridge structure

Technical Field

The disclosure relates to the technical field of infrared detection, in particular to an infrared detector with a microbridge structure.

Background

The fields of monitoring markets, vehicle and auxiliary markets, home markets, intelligent manufacturing markets, mobile phone applications and the like have strong demands on uncooled high-performance chips, certain requirements are provided for the performance of the chips, the performance consistency and the product price, the potential demands of more than one hundred million chips are expected every year, and the current process scheme and architecture cannot meet the market demands.

At present, an infrared detector adopts a mode of combining a measuring circuit and an infrared sensing structure, the measuring circuit is prepared by adopting a Complementary Metal-Oxide-Semiconductor (CMOS) process, and the infrared sensing structure is prepared by adopting a Micro-Electro-Mechanical System (MEMS) process, so that the following problems are caused:

(1) the infrared sensing structure is prepared by adopting an MEMS (micro-electromechanical systems) process, polyimide is used as a sacrificial layer, and the infrared sensing structure is incompatible with a CMOS (complementary metal oxide semiconductor) process.

(2) Polyimide is used as a sacrificial layer, so that the problem that the vacuum degree of a detector chip is influenced due to incomplete release exists, the growth temperature of a subsequent film is limited, and the selection of materials is not facilitated.

(3) Polyimide can cause the height of the resonant cavity to be inconsistent, and the working dominant wavelength is difficult to guarantee.

(4) The control of the MEMS process is far worse than that of the CMOS process, and the performance consistency and the detection performance of the chip are restricted.

(5) MEMS has low productivity, low yield and high cost, and can not realize large-scale batch production.

(6) The existing process capability of the MEMS is not enough to support the preparation of a detector with higher performance, and the MEMS has smaller line width and thinner film thickness, thereby being not beneficial to realizing the miniaturization of a chip.

Disclosure of Invention

In order to solve the technical problem or at least partially solve the technical problem, the present disclosure provides an infrared detector with a microbridge structure, which solves the problems of low performance, low pixel scale, low yield and poor consistency of the conventional MEMS infrared detector.

The present disclosure provides a microbridge structure infrared detector, including:

the CMOS infrared sensing structure comprises a CMOS measuring circuit system and a CMOS infrared sensing structure, wherein the CMOS measuring circuit system and the CMOS infrared sensing structure are both prepared by using a CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system;

the CMOS measurement circuit system comprises at least one layer of closed release isolation layer above the CMOS measurement circuit system, wherein the closed release isolation layer is used for protecting the CMOS measurement circuit system from being influenced by a process in the release etching process of manufacturing the CMOS infrared sensing structure;

the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (remote description language) process, wherein the CMOS infrared sensing structure comprises at least three metal interconnection layers, at least three dielectric layers and a plurality of interconnection through holes, the metal interconnection layers at least comprise a reflecting layer and two electrode layers, and the dielectric layers at least comprise two sacrificial layers and a heat-sensitive dielectric layer; the CMOS infrared sensing structure comprises a thermal sensitive medium layer, a CMOS measurement circuit system, a sacrifice layer and a metal oxide semiconductor (CMOS) sensor, wherein the thermal sensitive medium layer is used for converting temperature change corresponding to infrared radiation absorbed by the thermal sensitive medium layer into resistance change, further converting an infrared target signal into a signal capable of realizing electric reading through the CMOS measurement circuit system, the sacrifice layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the material forming the sacrifice layer comprises at least one of silicon, germanium or germanium-silicon, the sacrifice layer is corroded by adopting etching gas and a post-CMOS process, and the etching gas comprises at least one of xenon fluoride, chlorine, bromine, carbon tetrachloride or chlorofluorocarbon;

the CMOS infrared sensing structure comprises a resonant cavity formed by the reflecting layer and the heat sensitive medium layer and a suspended micro-bridge structure for controlling heat transfer, wherein the suspended micro-bridge structure comprises at least one layer of beam structure and at least one layer of absorption plate, the beam structure is positioned on one side of the absorption plate close to or far away from the CMOS measuring circuit system, a first columnar structure is arranged between the reflecting layer and the beam structure and directly and electrically connected with a supporting base in the reflecting layer and the corresponding beam structure, the beam structure is electrically connected with the CMOS measuring circuit system through the first columnar structure and the supporting base, a second columnar structure is arranged between the absorption plate and the beam structure and directly and electrically connected with the corresponding absorption plate and the corresponding beam structure, the absorption plate is used for converting infrared signals into electric signals and passing through the second columnar structure and the corresponding beam structure The first columnar structures are electrically connected with the corresponding first electrodes;

the first columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, and the second columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure;

the CMOS measuring circuit system is used for measuring and processing an array resistance value formed by one or more CMOS infrared sensing structures and converting an infrared signal into an image electric signal; the CMOS measuring circuit system comprises a bias voltage generating circuit, a column-level analog front-end circuit and a row-level circuit, wherein the input end of the bias voltage generating circuit is connected with the output end of the row-level circuit, the input end of the column-level analog front-end circuit is connected with the output end of the bias voltage generating circuit, the row-level circuit comprises row-level mirror image pixels and row selection switches, and the column-level analog front-end circuit comprises blind pixels; the row-level circuit is distributed in each pixel, selects a signal to be processed according to a row strobe signal of the time sequence generating circuit, and outputs a current signal to the column-level analog front-end circuit under the action of the bias voltage generating circuit so as to perform current-voltage conversion and output;

the column-level analog front-end circuit obtains two paths of currents according to the first bias voltage and the second bias voltage, performs transimpedance amplification on the difference between the two paths of generated currents and outputs the amplified current as an output voltage.

Optionally, the CMOS infrared sensing structure is fabricated on an upper layer or a same layer of a metal interconnection layer of the CMOS measurement circuitry.

Optionally, the reflective layer is configured to reflect an infrared signal and form the resonant cavity with the thermal sensitive dielectric layer, the reflective layer includes at least one metal interconnection layer, the first columnar structure connects the corresponding beam structure and the CMOS measurement circuit system through the metal interconnection process and the via process, and the second columnar structure connects the corresponding absorber plate and the corresponding beam structure through the metal interconnection process and the via process;

the beam structure comprises a first electrode layer, or the beam structure comprises a first dielectric layer and a first electrode layer, or the beam structure comprises a first electrode layer and a second dielectric layer, or the beam structure comprises a first electrode layer and a first heat-sensitive dielectric layer, or the beam structure comprises a first dielectric layer, a first electrode layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, a first electrode layer and a first heat-sensitive dielectric layer, or the beam structure comprises a first electrode layer, a first heat-sensitive dielectric layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, a first electrode layer, a first heat-sensitive dielectric layer and a second dielectric layer, the absorption plate comprises a second electrode layer and a second heat-sensitive dielectric layer, or the absorption plate comprises a third dielectric layer, a second electrode layer and a second heat-sensitive dielectric layer, or the absorption plate comprises a second electrode layer, a first dielectric layer and a second dielectric layer, The second heat-sensitive medium layer and the fourth medium layer, or the absorption plate comprises a third medium layer, a second electrode layer, a second heat-sensitive medium layer and a fourth medium layer; the material forming the first dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the second dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the third dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the fourth dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, and the material forming the first heat-sensitive dielectric layer comprises at least one of titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous germanium-oxygen-silicon, germanium-silicon, amorphous carbon, graphene, yttrium barium copper oxide, The material for forming the second heat-sensitive dielectric layer comprises at least one of materials with the resistance temperature coefficient larger than a set value, wherein the materials are prepared from copper or platinum, and the materials for forming the second heat-sensitive dielectric layer comprise at least one of materials with the resistance temperature coefficient larger than the set value, and the materials are prepared from titanium oxide, vanadium oxide, titanium vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous germanium oxygen silicon, germanium silicon, germanium oxygen silicon, amorphous carbon, graphene, yttrium barium copper oxygen, copper or platinum;

the material forming the first electrode layer comprises at least one of titanium, titanium nitride, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum or copper, and the material forming the second electrode layer comprises at least one of titanium, titanium nitride, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum or copper.

Optionally, at least one patterned metal interconnection layer is arranged between the reflective layer and the suspended microbridge structure, the patterned metal interconnection layer is located above or below the hermetic release isolation layer and is electrically insulated from the reflective layer, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector;

the suspended microbridge structure comprises a third dielectric layer and a fourth dielectric layer, the infrared detector further comprises a metamaterial structure and/or a polarization structure, the metamaterial structure or the polarization structure is at least one metal interconnection layer on one side, close to the CMOS measurement circuit system, of the third dielectric layer, or at least one metal interconnection layer on one side, far away from the CMOS measurement circuit system, of the fourth dielectric layer, or at least one metal interconnection layer which is arranged between the third dielectric layer and the fourth dielectric layer and electrically insulated from the second electrode layer, or the second electrode layer is used as a metamaterial structure layer or a polarization structure layer.

Optionally, the first columnar structure comprises at least one layer of hollow columnar structure, and at least the first electrode layer is arranged in the hollow columnar structure;

the infrared detector further comprises a first reinforcing structure, the first reinforcing structure is arranged corresponding to the position of the first columnar structure, and the first reinforcing structure is used for enhancing the connection stability between the first columnar structure and the beam structure and between the first columnar structure and the reflecting layer;

the first reinforcing structure is positioned on one side, far away from the CMOS measuring circuit system, of the first electrode layer; or, the first reinforcing structure is positioned on one side of the first electrode layer, which is close to the CMOS measuring circuit system.

Optionally, the second columnar structure comprises at least one layer of hollow columnar structure, and at least an electrode layer is arranged in the hollow columnar structure;

the infrared detector further comprises a second reinforcing structure, the second reinforcing structure is arranged corresponding to the position of the second columnar structure, and the second reinforcing structure is used for enhancing the connection stability between the second columnar structure and the absorption plate;

the second reinforcing structure is positioned on one side, far away from the CMOS measuring circuit system, of the electrode layer; alternatively, the second reinforcing structure is located on a side of the electrode layer adjacent to the CMOS measurement circuitry.

Optionally, the first columnar structure comprises at least one layer of solid columnar structure, and the solid columnar structure comprises a solid structure;

the side wall of the solid structure is in contact with a sacrificial layer between the corresponding beam structure and the CMOS measuring circuit system, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum; alternatively, the first and second electrodes may be,

the side wall of the solid structure is coated with at least one dielectric layer, the solid structure is arranged in contact with the dielectric layer, the material for forming the solid structure comprises at least one of tungsten, copper or aluminum, and the material for forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, titanium vanadium oxide, graphene, yttrium barium copper oxide, copper or platinum; alternatively, the first and second electrodes may be,

the side wall of the solid structure and the surface of the solid structure close to the CMOS measuring circuit system are coated with at least one adhesion layer, the side wall of the first columnar structure, far away from the solid structure, of the adhesion layer at the outermost periphery is coated with a dielectric layer, the material forming the solid structure comprises at least one of tungsten, copper or aluminum, the material forming the adhesion layer comprises at least one of titanium, titanium nitride, tantalum or tantalum nitride, and the material forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, vanadium oxide, graphene, yttrium barium oxide, copper or platinum;

the infrared detector further comprises a first reinforcing structure, the first reinforcing structure is arranged corresponding to the position of the first columnar structure and is positioned on one side, away from the CMOS measuring circuit system, of the first columnar structure, the first reinforcing structure is used for enhancing the connection stability between the first columnar structure and the beam structure, and the first reinforcing structure comprises a weighted block structure;

the weighting block structure is positioned on one side of the beam structure far away from the CMOS measuring circuit system and is in contact with the beam structure; or a through hole is formed in the position, corresponding to the first columnar structure, of the beam structure, at least part of the first columnar structure is exposed out of the through hole, the weighting block structure comprises a first part and a second part, the first part is filled in the through hole, the second part is located outside the through hole, and the orthographic projection of the second part covers the orthographic projection of the first part.

Optionally, the second columnar structure comprises at least one layer of solid columnar structures, the solid columnar structures comprising solid structures;

the side wall of the solid structure is arranged in contact with the sacrificial layer between the corresponding beam structure and the corresponding absorption plate, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum; alternatively, the first and second electrodes may be,

the side wall of the solid structure and the surface of the solid structure close to the CMOS measuring circuit system are coated with at least one adhesion layer, the side wall of the second columnar structure, far away from the solid structure, of the adhesion layer at the outermost periphery is coated with a dielectric layer, the material forming the solid structure comprises at least one of tungsten, copper or aluminum, the material forming the adhesion layer comprises at least one of titanium, titanium nitride, tantalum or tantalum nitride, and the material forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, vanadium oxide, graphene, yttrium copper oxide, copper or platinum;

the infrared detector further comprises a second reinforcing structure, the second reinforcing structure is arranged corresponding to the position of the second columnar structure and is positioned on one side, far away from the CMOS measuring circuit system, of the second columnar structure, the beam structure is positioned on one side, close to the CMOS measuring circuit system, of the absorption plate, the second reinforcing structure is used for enhancing the connection stability between the second columnar structure and the absorption plate, and the second reinforcing structure comprises a weighted block-shaped structure;

the weighted block structure is positioned on one side of the absorption plate far away from the CMOS measuring circuit system and is arranged in contact with the absorption plate; or, a through hole is formed in the position of the absorption plate corresponding to the second columnar structure, at least part of the second columnar structure is exposed out of the through hole, the weighting block-shaped structure comprises a first part filling the through hole and a second part located outside the through hole, and the orthographic projection of the second part covers the orthographic projection of the first part.

Optionally, the beam structure comprises a thermally symmetric structure;

the suspended microbridge structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer or/and the second dielectric layer between the beam structures which are oppositely arranged form a patterned film layer structure, the patterned film layer structure comprises a plurality of strip-shaped patterns, and the strip-shaped patterns are symmetrically arranged relative to the beam structures;

at least one hole-shaped structure is formed on the absorption plate, and the hole-shaped structure at least penetrates through the medium layer in the absorption plate; and/or at least one hole-like structure is formed on the beam structure.

Optionally, the hermetic release barrier is located at an interface between the CMOS measurement circuitry and the CMOS infrared sensing structure and/or in the CMOS infrared sensing structure;

the closed release isolation layer at least comprises a dielectric layer, and the dielectric material forming the closed release isolation layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide or aluminum oxide.

Optionally, the hermetic release isolation layer is located on a side of the reflection layer away from the CMOS measurement circuit system, at least one dielectric layer is disposed between the reflection layer and the hermetic release isolation layer, and a material constituting the dielectric layer includes at least one of germanium, silicon, or germanium-silicon.

Optionally, the infrared detector is based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm or 350nm CMOS process;

the metal connecting wire material forming the metal interconnection layer comprises at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium or cobalt.

Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:

the CMOS measurement circuit system and the CMOS infrared sensing structure are integrally prepared on the CMOS production line by utilizing the CMOS process, compared with the MEMS process, the CMOS does not have the process compatibility problem, the technical difficulty of the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS process production line process to prepare the infrared detector, and the risk caused by the transportation problem and the like is reduced; the infrared detector takes at least one of silicon, germanium or silicon germanium as a sacrificial layer, the silicon, germanium and silicon germanium are completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that the vacuum degree of a detector chip is influenced due to the unclean release of polyimide of the sacrificial layer, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared detector; the infrared detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, so that the infrared detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, and the infrared detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared detector based on the CMOS process can make the pixel size of the detector smaller, realize smaller chip area under the same array pixel, and is more beneficial to realizing the miniaturization of a chip; the infrared detector based on the CMOS process has the advantages of mature process production line, higher process control precision, better design requirement achievement, better product consistency, better circuit piece adjustment performance and better industrial batch production.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.

In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.

Fig. 1 is a schematic perspective structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 4 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 5 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 6 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 7 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 8 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 9 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 10 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 11 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 12 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 13 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

fig. 14 is a schematic structural diagram of a CMOS measurement circuitry according to an embodiment of the disclosure;

fig. 15 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present disclosure;

FIG. 16 is a schematic perspective view of another infrared detector pixel provided in this disclosure;

fig. 17 is a schematic perspective view of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 18 is a schematic perspective view of another infrared detector pixel provided in this disclosure;

FIG. 19 is a schematic perspective view of another infrared detector pixel provided in the embodiments of the present disclosure;

fig. 20 is a schematic top view of a polarization structure provided in an embodiment of the present disclosure;

FIG. 21 is a schematic diagram illustrating a top view of another polarization structure provided in an embodiment of the present disclosure;

FIG. 22 is a schematic diagram illustrating a top view of another polarization structure provided by an embodiment of the present disclosure;

FIG. 23 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiments of the present disclosure;

FIG. 24 is a schematic cross-sectional view of another infrared detector pixel provided in an embodiment of the present disclosure;

FIG. 25 is a schematic cross-sectional view of another infrared detector pixel provided in an embodiment of the present disclosure;

FIG. 26 is a schematic cross-sectional view of another infrared detector pixel provided by an embodiment of the disclosure;

FIG. 27 is a schematic cross-sectional view of another infrared detector pixel provided in an embodiment of the present disclosure;

FIG. 28 is a schematic cross-sectional view of another infrared detector pixel provided by an embodiment of the disclosure;

fig. 29 is a schematic perspective view of another infrared detector pixel provided in the embodiment of the present disclosure;

FIG. 30 is a schematic top view of the structure of FIG. 29;

fig. 31 is a schematic top view of a first dielectric layer according to an embodiment of the disclosure.

Detailed Description

In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.

Fig. 1 is a schematic perspective structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure, and fig. 2 is a schematic cross-sectional structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure. With reference to fig. 1 and 2, the infrared detector includes a plurality of infrared detector pixels arranged in an array, the CMOS process-based infrared detector includes a CMOS measurement circuit system 1 and a CMOS infrared sensing structure 2, both the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are manufactured by using a CMOS process, and the CMOS infrared sensing structure 2 is directly manufactured on the CMOS measurement circuit system 1.

Specifically, the CMOS infrared sensing structure 2 is configured to convert an external infrared signal into an electrical signal and transmit the electrical signal to the CMOS measurement circuit system 1, and the CMOS measurement circuit system 1 reflects temperature information corresponding to the infrared signal according to the received electrical signal, thereby implementing a temperature detection function of the infrared detector. The CMOS measuring circuit system 1 and the CMOS infrared sensing structure 2 are both prepared by using a CMOS process, and the CMOS infrared sensing structure 2 is directly prepared on the CMOS measuring circuit system 1, namely, the CMOS measuring circuit system 1 is prepared by adopting the CMOS process, and then the CMOS infrared sensing structure 2 is continuously prepared by utilizing the CMOS process by utilizing parameters of various processes compatible with a CMOS production line and the production line.

Therefore, the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are integrally prepared on the CMOS production line by utilizing the CMOS process, compared with the MEMS process, the CMOS process does not have the process compatibility problem, the technical difficulty of the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS production line process to prepare the infrared detector, and the risk caused by the transportation problem and the like is reduced; the infrared detector takes at least one of silicon, germanium or silicon germanium as a sacrificial layer, the silicon, germanium and silicon germanium are completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that the vacuum degree of a detector chip is influenced due to the unclean release of polyimide of the sacrificial layer, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared detector; the infrared detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, so that the infrared detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, and the infrared detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared detector based on the CMOS process can make the pixel size of the detector smaller, realize smaller chip area under the same array pixel, and is more beneficial to realizing the miniaturization of a chip; the infrared detector based on the CMOS process has the advantages of mature process production line, higher process control precision, better meeting design requirements, better product consistency, more contribution to circuit chip adjustment performance and more contribution to industrialized mass production.

Referring to fig. 1 and 2, the CMOS infrared sensing structure 2 includes a resonant cavity formed by the reflective layer 4 and the heat sensitive dielectric layer, and a suspended microbridge structure 40 for controlling heat transfer. Specifically, the CMOS infrared sensing structure 2 includes a reflective layer 4 located on the CMOS measurement circuit system 1 and a suspended microbridge structure 40 for controlling heat transfer, the suspended microbridge structure 40 includes an absorption plate 10, the absorption plate 10 includes a heat sensitive medium layer, and a resonant cavity is formed between the reflective layer 4 and the heat sensitive medium layer. The suspended microbridge structure 40 includes at least one layer of beam structure 11 and at least one layer of absorption plate 10, the beam structure 11 is located on one side of the absorption plate 10 close to or far away from the CMOS measurement circuit system 1, fig. 1 exemplarily shows that the suspended microbridge structure 40 includes one layer of beam structure 11 and one layer of absorption plate 10, and the beam structure 11 is located on one side of the absorption plate 10 close to the CMOS measurement circuit system 1.

A first columnar structure 61 is arranged between the reflective layer 4 and the beam structure 11, the first columnar structure 61 is directly electrically connected with the supporting base 42 in the reflective layer 4 and the corresponding beam structure 11, the beam structure 11 is electrically connected with the CMOS measurement circuit system 1 through the first columnar structure 61 and the supporting base 42, and the first columnar structure 61 is used for supporting the corresponding beam structure 11 after the sacrificial layer between the reflective layer 4 and the corresponding beam structure 11 is released. A second columnar structure 62 is arranged between the absorption plate 10 and the beam structure 11, the second columnar structure 62 is directly electrically connected with the corresponding absorption plate 10 and the corresponding beam structure 11, the absorption plate 10 is used for converting infrared signals into electric signals and is electrically connected with the corresponding first columnar structure 61 through the second columnar structure 62 and the corresponding beam structure 11, namely, the electric signals converted by the absorption plate 10 through the infrared signals are sequentially transmitted to the CMOS measurement circuit system 1 through the second columnar structure 62, the beam structure 11, the first columnar structure 61 and the supporting base 42, the CMOS measurement circuit system 1 processes the received electric signals to reflect temperature information, non-contact infrared temperature detection of the infrared detector is realized, and the second columnar structure 62 is used for supporting the corresponding beam structure 11 or the absorption plate 10 after a sacrificial layer between the corresponding absorption plate 10 and the corresponding beam structure 11 is released.

It should be noted that, the first columnar structure 61 described in the above embodiment directly electrically connects the supporting base 42 and the beam structure 11 in the reflective layer 4, which means that the first columnar structure 61 has only two electrical connection ends, one electrical connection end of the first columnar structure 61 is directly electrically connected to the supporting base 42, and the other electrical connection end of the first columnar structure 61 is directly electrically connected to the beam structure 11 closest to the electrical connection end of the first columnar structure 61. The second columnar structure 62 described in the above embodiment directly electrically connects the absorber plate 10 and the beam structure 11, which means that the second columnar structure 62 has only two electrical connection terminals, one electrical connection terminal of the second columnar structure 62 directly electrically connects the absorber plate 10 nearest to the electrical connection terminal of the second columnar structure 62, and the other electrical connection terminal of the second columnar structure 62 directly electrically connects the beam structure 11 nearest to the electrical connection terminal of the second columnar structure 62.

The CMOS infrared sensing structure 2 outputs a positive electrical signal and a ground electrical signal through different electrode structures, and the positive electrical signal and the ground electrical signal are transmitted to the corresponding supporting base 42 through different sets of columnar structures, one set of columnar structures includes a first columnar structure 61 and a second columnar structure 62. Illustratively, the CMOS infrared sensing structure 2 may be arranged in a direction parallel to the CMOS measurement circuitry 1, and comprises two sets of pillar structures, one of which may be arranged for transmitting a positive electrical signal and the other for transmitting a ground electrical signal. Or as shown in fig. 1, the direction parallel to the CMOS measurement circuit system 1 is set, the CMOS infrared sensing structure 2 includes four groups of columnar structures, each two of the four groups of columnar structures can be a group that transmits a positive electric signal and a ground electric signal, the infrared detector includes a plurality of infrared detector pixels arranged in an array, the four groups of columnar structures can also select two groups of columnar structures to transmit a positive electric signal and a ground electric signal, and the other two groups of columnar structures provide the adjacent infrared detector pixels with electric signal transmission. In addition, the reflection layer 4 includes a reflection plate 41 and a supporting base 42, a part of the reflection layer 4 is used as a dielectric medium electrically connected to the first columnar structure 61 and the CMOS measurement circuit system 1, that is, the supporting base 42, the reflection plate 41 is used for reflecting infrared rays to the heat sensitive medium layer in the suspended microbridge structure 40, and the secondary absorption of the infrared rays is realized by matching with a resonant cavity formed between the reflection layer 4 and the heat sensitive medium layer in the suspended microbridge structure 40, so as to improve the infrared absorption rate of the infrared detector and optimize the infrared detection performance of the infrared detector.

Fig. 3 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. As shown in fig. 3, the suspended micro-bridge structure 40 may also be configured to include a plurality of layers of beam structures 11, fig. 3 exemplarily configures the suspended micro-bridge structure 40 to include two layers of beam structures 11, for example, a first layer of beam structure 111 and a second layer of beam structure 112, the first layer of beam structure 111 is located on a side of the second layer of beam structure 112 away from the CMOS measurement circuit system 1, a column structure 113 is also disposed between the first layer of beam structure 111 and the second layer of beam structure 112, and the column structure 113 is configured to support the first layer of beam structure 111 after a sacrificial layer between the first layer of beam structure 111 and the second layer of beam structure 112 is released. The electrode layer in the absorption plate 10 is electrically connected with the electrode layer in the first layer beam structure 111 through the second column structure 62, the electrode layer in the first layer beam structure 111 is electrically connected with the electrode layer in the second layer beam structure 112 through the column structure 113 between the first layer beam structure 111 and the second layer beam structure 112, the electrode layer in the second layer beam structure 112 is electrically connected with the first column structure 61, and the electric signal converted by the absorption plate 10 through the infrared signal is transmitted to the CMOS measurement circuit system 1 through the second column structure 62, the first layer beam structure 111, the column structure 113 between the first layer beam structure 111 and the second layer beam structure 112, the first column structure 61 and the support base 42 in sequence. The first columnar structure 61 is electrically connected directly to the support base 42 and the beam structure 11 closest to the CMOS measurement circuitry 1, and the second columnar structure 62 is electrically connected directly to the absorber plate 10 closest to the CMOS measurement circuitry 1 and the beam structure 11 closest to the absorber plate 10.

Fig. 4 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. As shown in fig. 4, the suspended micro-bridge structure 40 may also be configured to include multiple layers of absorber plates 10, fig. 4 exemplarily configures the suspended micro-bridge structure 40 to include two layers of absorber plates 10, for example, a first layer of absorber plate 1001 and a second layer of absorber plate 1002, the first layer of absorber plate 1001 is located on a side of the second layer of absorber plate 1002 away from the CMOS measurement circuit system 1, a column structure 1003 is also disposed between the first layer of absorber plate 1001 and the second layer of absorber plate 1002, and the column structure 1003 is used to support the first layer of absorber plate 1001 after the sacrificial layer between the first layer of absorber plate 1001 and the second layer of absorber plate 1002 is released. The first layer of absorption plate 1001 and the second layer of absorption plate 1002 both include electrode layers, the electrode layers in the two may be electrically connected through the columnar structure 1003 between the first layer of absorption plate 1001 and the second layer of absorption plate 1002, the electrode layers in the two may not be electrically connected, the electrode layer in the second layer of absorption plate 1002 is electrically connected with the electrode layer in the beam structure 11 through the second columnar structure 62, the electrode layer in the beam structure 11 is electrically connected with the support base 42 through the first columnar structure 61, and an electrical signal converted by the absorption plate 10 via an infrared signal is transmitted to the CMOS measurement circuit system 1 sequentially through the second columnar structure 62, the beam structure 11, the first columnar structure 61 and the support base 42. In addition, the materials of the heat sensitive medium layers in the first absorption plate 1001 and the second absorption plate 1002 may be the same or different, the suspended microbridge structure 40 is set to include multiple layers of absorption plates 10, and the heights of the resonant cavities corresponding to the heat sensitive medium layers in different absorption plates 10 are different, so that the infrared detector can absorb infrared radiation of different wave bands. The first columnar structure 61 is electrically connected directly to the support base 42 and the beam structure 11 closest to the CMOS measurement circuitry 1, and the second columnar structure 62 is electrically connected directly to the absorber plate 10 closest to the CMOS measurement circuitry 1 and the beam structure 11 closest to the absorber plate 10.

Fig. 5 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. Unlike the structures shown in fig. 1 to 4, the infrared detector arrangement beam structure 11 of the structure shown in fig. 5 is located on the side of the absorption plate 10 away from the CMOS measurement circuitry 1, and fig. 5 exemplarily provides a suspended microbridge structure 40 including a layer of the beam structure 11 and a layer of the absorption plate 10. Specifically, the electrode layer in the absorption plate 10 is electrically connected to the electrode layer in the beam structure 11 through the second columnar structure 62, the electrode layer in the beam structure 11 is electrically connected to the support base 42 through the first columnar structure 61, and the electrical signal converted by the absorption plate 10 via the infrared signal is transmitted to the CMOS measurement circuit system 1 through the second columnar structure 62, the beam structure 11, the first columnar structure 61, and the support base 42 in sequence. When the suspended micro-bridge structure 40 includes a plurality of layers of beam structures 11 and a plurality of layers of absorption plates 10, and the beam structures 11 are located on a side of the absorption plate 10 away from the CMOS measurement circuitry 1, the first pillar structure 61 is electrically connected to the supporting base 42 and the beam structure 11 farthest from the CMOS measurement circuitry 1, and the second pillar structure 62 is electrically connected to the absorption plate 10 farthest from the CMOS measurement circuitry 1 and the beam structure 11 closest to the absorption plate 10.

The first columnar structures 61 include at least one layer of solid columnar structures and/or at least one layer of hollow columnar structures, the second columnar structures 62 include at least one layer of solid columnar structures and/or at least one layer of hollow columnar structures, that is, the first columnar structures 61 may include at least one layer of solid columnar structures, or may include at least one layer of hollow columnar structures, or may include at least one layer of solid columnar structures and at least one layer of hollow columnar structures, and the second columnar structures 62 may include at least one layer of solid columnar structures, or may include at least one layer of hollow columnar structures, or may include at least one layer of solid columnar structures and at least one layer of hollow columnar structures. Fig. 2 exemplarily sets up that first columnar structure 61 includes a hollow columnar structure of one deck, form hollow structure promptly in first columnar structure 61 position, second columnar structure 62 includes a hollow columnar structure of one deck, form hollow structure promptly in second columnar structure 62 position, hollow columnar structure is favorable to reducing the thermal conductance of first columnar structure 61 and second columnar structure 62, and then reduce the influence of the thermal conductance that first columnar structure 61 and second columnar structure 62 produced to the signal of telecommunication that unsettled microbridge structure 40 generated, be favorable to promoting the infrared detection performance of infrared detector pixel and the infrared detector including this infrared detector pixel.

Fig. 6 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. With reference to fig. 1 and 6, fig. 6 exemplarily shows that the first columnar structure 61 includes a solid columnar structure layer, that is, a solid metal structure is formed at the position of the first columnar structure 61, the second columnar structure 62 includes a solid columnar structure layer, that is, a solid metal structure is formed at the position of the second columnar structure 62, the mechanical stability of the solid columnar structure is good, the first columnar structure 61, the beam structure 11 and the supporting base 42 are improved, and the supporting connection stability between the second columnar structure 62 and the beam structure 11 and the absorbing plate 10 is improved, so that the structural stability of the infrared sensor pixel and the infrared detector including the infrared detector pixel is improved. In addition, the resistance of the metal solid columnar structure is small, signal loss in the process of electrical signal transmission between the absorption plate and the CMOS measurement circuit system 1 is reduced, infrared detection performance of the infrared detector is improved, the size of the metal solid columnar structure is easier to control accurately, namely the solid columnar structure can realize a columnar structure with a smaller size, smaller chip size requirements are met, and miniaturization of the infrared detector is realized.

Fig. 7 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure, and fig. 8 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure. Fig. 7 exemplarily shows that the first columnar structure 61 includes a layer of solid columnar structure, i.e., a solid metal structure formed at the position of the first columnar structure 61, and the second columnar structure 62 includes a layer of hollow columnar structure, i.e., a hollow structure formed at the position of the second columnar structure 62. Fig. 8 exemplarily shows that the first columnar structure 61 includes a layer of solid columnar structure, i.e., a hollow structure is formed at the position of the first columnar structure 61, and the second columnar structure 62 includes a layer of solid columnar structure, i.e., a solid metal structure is formed at the position of the second columnar structure 62, so that the infrared detector shown in fig. 7 and 8 has the advantages of both the hollow columnar structure and the solid columnar structure described in the above embodiment. In addition, with reference to fig. 1 to 8, the absorption plate 9 and the beam structure 10 are disposed on different layers, and the beam structure 10 does not affect the occupied area of the absorption plate 9, which is beneficial to increasing the occupied area of the absorption plate 10 and improving the infrared detection sensitivity of the infrared detector.

Fig. 9 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. With reference to fig. 1 and 9, each of the first columnar structure 61 and the second columnar structure 62 may include a plurality of layers of solid columnar structures, and fig. 9 schematically illustrates that the first columnar structure 61 includes two layers of solid columnar structures, that is, the first columnar structure 61 includes a solid columnar structure 610 and a solid columnar structure 620, and the second columnar structure 62 may also adopt an arrangement similar to the plurality of layers of solid columnar structures adopted by the first columnar structure 61 shown in fig. 9, so that the infrared detector has the advantages of the solid columnar structures described in the foregoing embodiments. It is also possible to arrange that the first columnar structure 61 and the second columnar structure 62 each include a plurality of layers of hollow columnar structures, so that the infrared detector has the advantages of the hollow columnar structures described in the above embodiments. In addition, the first columnar structure 61 and the second columnar structure 62 are arranged to comprise multilayer hollow columnar structures, or the first columnar structure 61 and the second columnar structure 62 are arranged to comprise multilayer solid columnar structures, so that the types of stand columns in the same columnar structure can be reduced, and the preparation process of the columnar structures can be simplified.

Fig. 10 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure, and fig. 11 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure. Referring to fig. 1, 10 and 11, each of the first columnar structure 61 and the second columnar structure 62 may include at least one layer of solid columnar structures and at least one layer of hollow columnar structures, figures 10 and 11 schematically illustrate that the first columnar structure 61 includes a layer of solid columnar structures 630 and a layer of hollow columnar structures 640 by taking the first columnar structure 61 as an example, figure 10 exemplarily provides that the solid columnar structures 630 in the first columnar structures 61 are located on a side of the hollow columnar structures 640 adjacent to the CMOS measurement circuitry 1, fig. 11 exemplarily shows that the solid columnar structure 630 in the first columnar structure 61 is located on the side of the hollow columnar structure 640 away from the CMOS measurement circuitry 1, the second columnar structure 62 may also adopt a manner similar to the arrangement of the solid columnar structure and the hollow columnar structure superimposed on the first columnar structure 61 shown in fig. 10 and 11, so that the infrared detector has the advantages of the hollow columnar structure and the solid columnar structure described in the above embodiments.

For example, the pillars on the same layer in the first columnar structure 61 or the second columnar structure 62 may be the same type of pillars, that is, the pillars on the same layer in the first columnar structure 61 may be all solid pillar structures or all hollow pillar structures, and the pillars on the same layer in the second columnar structure 62 may be all solid pillar structures or all hollow pillar structures, so that the pillars on the same layer may be formed by the same process step, which is beneficial to simplifying the preparation process of the pillar structures. In addition, the same columnar structure may further include different types of pillars, the same layer may also be provided with different types of pillars, and the types of pillars may be specifically set based on specific requirements of the infrared detector, which is not specifically limited in the embodiment of the present disclosure.

From this, include the multilayer stand through setting up first columnar structure 61 and/or second columnar structure 62, be favorable to reducing the height of each layer stand among the columnar structure, the height of stand is lower, its straightness of steepness is better, consequently, easily form the better stand of straightness of steepness, thereby optimize the holistic straightness of steepness of columnar structure, the whole size of columnar structure also can be accomplished littleer, be favorable to reducing the shared space of columnar structure, thereby increase CMOS infrared sensing structure's effective area, and then improve the duty cycle, improve infrared detector's infrared detection sensitivity. In addition, the column structure may further include more layers of columns, for example, three or more layers of columns, and each column may be a solid column structure or a hollow column structure. In addition, the columnar structure 113 between the first layer beam structure 111 and the second layer beam structure 112 in fig. 3 and the columnar structure 1003 between the first layer absorber plate 1001 and the second layer absorber plate 1002 in fig. 4, for example, may each include at least one layer of a solid columnar structure and/or at least one layer of a hollow columnar structure, that is, the columnar structure 113 between the first layer beam structure 111 and the second layer beam structure 112 in fig. 3 and the columnar structure 1003 between the first layer absorber plate 1001 and the second layer absorber plate 1002 in fig. 4 may also take the form of a hollow columnar structure, a solid columnar structure, and a combination of a hollow columnar structure and a solid columnar structure shown in the above-described embodiments.

With reference to fig. 1 to 11, sacrificial layers (not shown in fig. 1 to 11) are respectively disposed between the reflective layer 4 and the suspended micro-bridge structure 40, between adjacent beam structures 11, between adjacent absorber plates 10, and between the beam structures 11 and the absorber plates 10 adjacent to the beam structures 11, when the reflective layer 4 is disposed with the close-release isolation layer 3, a sacrificial layer is disposed between the close-release isolation layer 3 and the suspended micro-bridge structure 40, the sacrificial layer is used to form the CMOS infrared sensing structure 2 into a hollow structure, the material constituting the sacrificial layer includes at least one of silicon, germanium, or silicon germanium, wherein the silicon may be at least one of single-crystal form, polycrystalline form, or amorphous form, the germanium may be at least one of single-crystal form, polycrystalline form, or amorphous form, the silicon may be at least one of single-crystal form, polycrystalline form, or amorphous form, the sacrificial layer is etched by using an etching gas and a post-CMOS process, the etching gas comprises at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride or chlorofluorohydrocarbon. Illustratively, the post-CMOS process may etch the sacrificial layer using at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride, or chlorofluorocarbons, which are gases having etching properties for silicon, germanium, and silicon germanium. Specifically, the material constituting the sacrificial layer includes at least one of silicon, germanium or silicon germanium so as to be compatible with CMOS process, and a post-CMOS process may be adopted, in which the sacrificial layer is etched by the post-CMOS process so as to release the sacrificial layer in the final infrared detection chip product.

Alternatively, in conjunction with fig. 1 to 11, at least one hole structure may be formed on the absorption plate 10, and the hole structure penetrates through at least the medium layer in the absorption plate 10; and/or, at least one hole-shaped structure is formed on the beam structure 11, that is, only the absorption plate 10, only the beam structure 11, or both the absorption plate 10 and the beam structure 11 may be provided with the hole-shaped structure. For example, whether the hole structures on the absorption plate 10 or the beam structure 11 are hole structures, the hole structures may be circular hole structures, square hole structures, polygonal hole structures, or irregular pattern hole structures, the shape of the hole structures on the absorption plate 10 and the beam structure 11 is not specifically limited by the embodiments of the present disclosure, and the number of the hole structures on the absorption plate 10 and the beam structure 11 is not specifically limited by the embodiments of the present disclosure.

Therefore, at least one hole-shaped structure is formed on the absorption plate 10, the hole-shaped structure at least penetrates through the dielectric layer in the absorption plate 10, the infrared detector is provided with a sacrificial layer which is in contact with the absorption plate 10 and needs to be released finally, the sacrificial layer needs to be corroded by chemical reagents at the end of the infrared detector manufacturing process when the sacrificial layer is released, and the hole-shaped structure on the absorption plate 10 is beneficial to increasing the contact area between the chemical reagents for releasing and the sacrificial layer and accelerating the release rate of the sacrificial layer. In addition, the area of the absorption plate 10 is larger than that of the beam structure 11, and the hole-shaped structure on the absorption plate 10 is beneficial to releasing the internal stress of the absorption plate 10, optimizing the planarization degree of the absorption plate 10, and being beneficial to improving the structural stability of the absorption plate 10, so that the structural stability of the whole infrared detector is improved. In addition, at least one hole-shaped structure is formed on the beam structure 11, which is beneficial to further reducing the thermal conductance of the beam structure 11 and improving the infrared detection sensitivity of the infrared detector.

With reference to fig. 2 and fig. 5 to 8, at least one hermetic release isolation layer 3 may be included above the CMOS measurement circuitry 1, and the hermetic release isolation layer 3 is used to protect the CMOS measurement circuitry 1 from process influence during the release etching process for fabricating the CMOS infrared sensing structure 2. Optionally, the close release isolation layer 3 is located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 and/or in the CMOS infrared sensing structure 2, that is, the close release isolation layer 3 may be located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2, or the close release isolation layer 3 may be located in the CMOS infrared sensing structure 2, or the close release isolation layer 3 may be located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2, and the close release isolation layer 3 is located in the CMOS infrared sensing structure 2, and the close release isolation layer 3 is used for protecting the CMOS measurement circuit system 1 from erosion when a sacrificial layer is released by a corrosion process, and the close release isolation layer 3 at least includes a dielectric layer, and the dielectric material constituting the close release isolation layer 3 includes silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride oxide, silicon nitride, At least one of silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide, or aluminum oxide.

Fig. 2 and 5 to 8 exemplarily set the hermetic release barrier layer 3 in the CMOS infrared sensing structure 2, the hermetic release barrier layer 3 may be, for example, one or more dielectric layers above the metal interconnection layer of the reflective layer 4, here, the hermetic release barrier layer 3 is exemplarily shown to be one dielectric layer, in which case, the material constituting the hermetic release barrier layer 3 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide, or aluminum oxide, and the thickness of the hermetic release barrier layer 3 is smaller than that of the sacrificial layer. The resonant cavity of the infrared detector is realized by releasing the vacuum cavity behind the sacrificial layer, the reflecting layer 4 is used as the reflecting layer of the resonant cavity, the sacrificial layer is positioned between the reflecting layer 4 and the suspended micro-bridge structure 40, and when at least one layer of closed release isolation layer 3 positioned on the reflecting layer 4 is arranged to select silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide or aluminum oxide and other materials as a part of the resonant cavity, the reflecting effect of the reflecting layer 4 is not influenced, the height of the resonant cavity can be reduced, the thickness of the sacrificial layer is further reduced, and the release difficulty of the formed sacrificial layer is reduced. In addition, the sealing release isolation layer 3 and the first columnar structure 61 are arranged to form a sealing structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Fig. 12 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. On the basis of the above embodiment, fig. 12 also sets the hermetic release isolation layer 3 in the CMOS infrared sensing structure 2, the hermetic release isolation layer 3 is located on the side of the reflection layer 4 away from the CMOS measurement circuit system 1, at least one dielectric layer 43 is disposed between the reflection layer 4 and the hermetic release isolation layer 3, fig. 12 exemplarily sets a dielectric layer 43 disposed between the reflection layer 4 and the hermetic release isolation layer 3, the material constituting the dielectric layer 43 includes at least one of germanium, silicon or germanium-silicon, and the dielectric layer 43 is used for adjusting the height of the infrared detector resonant cavity. Specifically, the close-release isolation layer 3 may be, for example, one or more dielectric layers located above the metal interconnection layer of the reflective layer 4, where the close-release isolation layer 3 is exemplarily shown as one dielectric layer, and the close-release isolation layer 3 and the dielectric layer 43 cover the first columnar structure 61, where the material constituting the close-release isolation layer 3 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide, or aluminum oxide, and the thickness of the close-release isolation layer 3 and the thickness of the dielectric layer 43 are also smaller than the thickness of the sacrificial layer. Through setting up airtight release insulating layer 3 and dielectric layer 43 cladding first columnar structure 61, can utilize airtight release insulating layer 3 and dielectric layer 43 as the support of first columnar structure 61 department on the one hand, improved first columnar structure 61's stability, guarantee first columnar structure 61 and unsettled microbridge structure 40 and support the electric connection of base 42. On the other hand, the sealed release insulating layer 3 and the dielectric layer 43 covering the first columnar structure 61 can reduce the contact between the first columnar structure 61 and the external environment, reduce the contact resistance between the first columnar structure 61 and the external environment, further reduce the noise of the infrared detector pixel, improve the detection sensitivity of the infrared detection sensor, and simultaneously prevent the electrical breakdown of the metal exposed outside the first columnar structure 61. Similarly, the resonant cavity of the infrared detector is realized by releasing the vacuum cavity after the sacrificial layer, the reflective layer 4 is used as the reflective layer of the resonant cavity, the sacrificial layer is positioned between the reflective layer 4 and the suspended microbridge structure 40, at least one layer of the closed release isolating layer 3 positioned on the reflective layer 4 is selected from silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide or aluminum oxide and the like as a part of the resonant cavity, at the same time, at least one of silicon, germanium or germanium-silicon materials is selected as a part of the resonant cavity as the dielectric layer 43 positioned between the closed release isolating layer 3 and the reflective layer 4, and the high transmittance characteristic of silicon, germanium or germanium-silicon to infrared light enables the closed release isolating layer 3 and the dielectric layer 43 not to influence the reflection effect of the reflective layer 4, so that the height of the resonant cavity can be greatly reduced, and the thickness of the sacrificial layer can be further reduced, the release difficulty of the constructed sacrificial layer is reduced. In addition, the sealing release isolation layer 3 and the first columnar structure 61 are arranged to form a sealing structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Fig. 13 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present disclosure. Unlike the infrared detector having the structure shown in the above-mentioned embodiment, in the infrared detector having the structure shown in fig. 13, the close release isolation layer 3 is located at the interface between the CMOS measurement circuitry 1 and the CMOS infrared sensing structure 2, for example, the close release isolation layer 3 is located between the reflective layer 4 and the CMOS measurement circuitry 1, that is, the close release isolation layer 3 is located below the metal interconnection layer of the reflective layer 4, and the support base 42 is electrically connected to the CMOS measurement circuitry 1 through a through hole penetrating through the close release isolation layer 3. Specifically, because the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are both formed by using a CMOS process, after the CMOS measurement circuit system 1 is formed, a wafer including the CMOS measurement circuit system 1 is transferred to a next process to form the CMOS infrared sensing structure 2, and if a sacrificial layer with a thickness of about 2um is corroded, the circuit will be affected if no insulating layer is used as a barrier, and in order to ensure that a medium on the CMOS measurement circuit system is not corroded when the sacrificial layer is released, the interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 is provided with the closed release insulating layer 3 according to the embodiment of the present disclosure. After the CMOS measuring circuit system 1 is prepared and formed, a closed release isolation layer 3 is prepared and formed on the CMOS measuring circuit system 1, the CMOS measuring circuit system 1 is protected by the closed release isolation layer 3, in order to ensure the electric connection between the support base 42 and the CMOS measuring circuit system 1, after the closed release isolation layer 3 is prepared and formed, a through hole is formed in the area of the closed release isolation layer 3 corresponding to the support base 42 by adopting an etching process, and the support base 42 is electrically connected with the CMOS measuring circuit system 1 through the through hole. In addition, the closed release isolation layer 3 and the support base 42 are arranged to form a closed structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Illustratively, the material constituting the hermetic release barrier layer 3 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide, or aluminum oxide. Specifically, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, titanium oxide, or aluminum oxide are all CMOS process corrosion-resistant materials, i.e., these materials are not corroded by the sacrificial layer release agent, so the closed release barrier layer 3 can be used to protect the CMOS measurement circuitry 1 from corrosion when the corrosion process is performed to release the sacrificial layer. In addition, the closed release isolation layer 3 covers the CMOS measurement circuit system 1, and the closed release isolation layer 3 can also be used for protecting the CMOS measurement circuit system 1 from being influenced by the process in the release etching process for manufacturing the CMOS infrared sensing structure 2. In addition, when being provided with at least one deck airtight release insulating layer 3 on reflection stratum 4, the material that sets up to constitute airtight release insulating layer 3 includes silicon oxide, silicon nitride, silicon oxynitride, carborundum, silicon oxycarbide, silicon carbonitride, amorphous carbon, at least one in titanium oxide or the aluminium oxide, when setting up airtight release insulating layer 3 and improving first columnar structure 61 stability, airtight release insulating layer 3 can hardly influence the reflection course in the resonant cavity, can avoid airtight release insulating layer 3 to influence the reflection course of resonant cavity, and then avoid airtight release insulating layer 3 to the influence of infrared detector detection sensitivity.

With reference to fig. 1 to 13, a CMOS fabrication process of the CMOS infrared sensing structure 2 includes a Metal interconnection process, a via process, an imd (inter Metal dielectric) process, and an RDL (redistribution) process, where the CMOS infrared sensing structure 2 includes at least three Metal interconnection layers, at least three dielectric layers, and a plurality of interconnection vias, the dielectric layers include at least two sacrificial layers and a thermal sensitive dielectric layer, the Metal interconnection layers include at least a reflective layer 4 and two electrode layers, the thermal sensitive dielectric layer includes a thermal sensitive material with a temperature coefficient of resistance greater than a predetermined value, for example, the temperature coefficient of resistance may be greater than or equal to 0.015/K, the thermal sensitive material with the temperature coefficient of resistance greater than the predetermined value forms the thermal sensitive dielectric layer, and the thermal sensitive dielectric layer is configured to convert a temperature change corresponding to infrared radiation absorbed by the thermal sensitive dielectric layer into a resistance change, the infrared target signal is then converted into a signal that can be read electrically by the CMOS measurement circuitry 1. In addition, the heat-sensitive dielectric layer comprises a heat-sensitive material with a resistance temperature coefficient larger than a set value, and the resistance temperature coefficient can be larger than or equal to 0.015/K, so that the detection sensitivity of the infrared detector can be improved.

Specifically, the metal interconnection process is used to electrically connect the upper and lower metal interconnection layers, for example, the conductive layer in the first columnar structure 61 and the support base 42, the via process is used to form an interconnection via connecting the upper and lower metal interconnection layers, for example, forming interconnect vias connecting the conductive layer in the first columnar structures 61 with the support pedestal, an IMD process is used to achieve isolation between the upper and lower metal interconnect layers, i.e. electrical insulation, e.g. between the absorber plate 10 and the electrode layer in the beam structure 11 and the reflector plate 41, RDL process, i.e. redistribution layer process, in particular redistribution layer metal on top of the top layer metal of the circuit and metal pillars with the top layer metal of the circuit, for example, tungsten pillars are electrically connected, the reflective layer 4 in the infrared detector can be further fabricated on the top metal of the CMOS measurement circuitry 1 by using the RDL process, and the supporting base 42 on the reflective layer 4 is electrically connected with the top metal of the CMOS measurement circuitry 1. In addition, as shown in fig. 2, the CMOS manufacturing process of the CMOS measurement circuit system 1 may also include a metal interconnection process and a via process, the CMOS measurement circuit system 1 includes metal interconnection layers 101, dielectric layers 102 and a silicon substrate 103 at the bottom, which are arranged at intervals, and the upper and lower metal interconnection layers 101 are electrically connected through vias 104.

With reference to fig. 1 to 13, the CMOS infrared sensing structure 2 includes a resonant cavity formed by a reflective layer 4 and a heat sensitive dielectric layer, and a suspended microbridge structure 40 for controlling heat transfer, the CMOS measurement circuit system 1 is configured to measure and process an array resistance value formed by one or more CMOS infrared sensing structures 2, and convert an infrared signal into an image electrical signal, the infrared detector includes a plurality of infrared detector pixels arranged in an array, and each infrared detector pixel includes one CMOS infrared sensing structure 2. Specifically, the resonant cavity may be formed by a cavity between the reflective layer 4 and the heat-sensitive medium layer in the absorption plate 10, for example, and infrared light is reflected back and forth in the resonant cavity through the absorption plate 10 to improve the detection sensitivity of the infrared detector.

Fig. 14 is a schematic structural diagram of a CMOS measurement circuit system according to an embodiment of the present disclosure. With reference to fig. 1 to 14, the CMOS measurement circuit system 1 includes a bias voltage generation circuit 7, a column-level analog front-end circuit 8 and a row-level circuit 9, an input end of the bias voltage generation circuit 7 is connected to an output end of the row-level circuit 9, an input end of the column-level analog front-end circuit 8 is connected to an output end of the bias voltage generation circuit 7, the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the column-level analog front-end circuit 8 includes a blind image element RD; the row-level circuit 9 is distributed in each pixel, selects a signal to be processed according to a row strobe signal of the timing sequence generating circuit, and outputs a current signal to the column-level analog front-end circuit 8 under the action of the bias generating circuit 7 to perform current-voltage conversion output; the row stage circuit 9 outputs a third bias voltage VRsm to the bias generation circuit 7 when being controlled by the row selection switch K1 to be gated, the bias generation circuit 7 outputs a first bias voltage V1 and a second bias voltage V2 according to the input constant voltage and the third bias voltage VRsm, and the column stage analog front-end circuit 8 obtains two currents according to the first bias voltage V1 and the second bias voltage V2, and performs transimpedance amplification on the difference between the two generated currents to output as an output voltage.

Specifically, the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the row-level circuit 9 is configured to generate a third bias voltage VRsm according to a gating state of the row selection switch K1. Illustratively, the row-level mirror image elements Rsm may be subjected to a shading process such that the row-level mirror image elements Rsm are subjected to a fixed radiation by a shading sheet having a temperature constantly equal to the substrate temperature, the row selection switch K1 may be implemented by a transistor, the row selection switch K1 is closed, and the row-level mirror image elements Rsm are connected to the bias generation circuit 7, that is, the row-level circuit 9 outputs the third bias voltage VRsm to the bias generation circuit 7 when being gated by the row selection switch K1. The bias generation circuit 7 may include a first bias generation circuit 71 and a second bias generation circuit 72, the first bias generation circuit 71 being configured to generate a first bias voltage V1 according to an input constant voltage, which may be, for example, a positive power supply signal with a constant voltage. The second bias generation circuit 72 may include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 controlling the gate driving sub-circuits 722 to generate the corresponding second bias voltages V2, respectively, according to the third bias voltage VRsm.

The column-level analog front-end circuit 8 includes a plurality of column control sub-circuits 81, the column control sub-circuits 81 are disposed in correspondence with the gate driving sub-circuits 722, and exemplarily, the column control sub-circuits 81 may be disposed in one-to-one correspondence with the gate driving sub-circuits 722, and the gate driving sub-circuits 722 are configured to provide the second bias voltage V2 to the corresponding column control sub-circuits 81 according to their own gate states. For example, it may be set that when the gate driving sub-circuit 722 is gated, the gate driving sub-circuit 722 supplies the second bias voltage V2 to the corresponding column control sub-circuit 81; when the gate driving sub-circuit 722 is not gated, the gate driving sub-circuit 722 stops supplying the second bias voltage V2 to the corresponding column control sub-circuit 81.

The column-level analog front-end circuit 8 comprises an effective pixel RS and a blind pixel RD, the column control sub-circuit is used for generating a first current I1 according to a first bias voltage V1 and the blind pixel RD, generating a second current I2 according to a second bias voltage V2 and the effective pixel RS, performing transimpedance amplification on a difference value between the first current I1 and the second current I2, and outputting the amplified difference value, and the row-level image pixel Rsm and the effective pixel RS have the same temperature drift amount at the same ambient temperature.

Illustratively, the row-level image elements Rsm are thermally insulated from the CMOS measurement circuitry 1 and are shaded, and the row-level image elements Rsm are subjected to a fixed radiation from a shade sheet having a temperature constantly equal to the substrate temperature. The absorption plate 10 of the active pixel RS is thermally insulated from the CMOS measurement circuitry 1 and the active pixel RS receives external radiation. The absorbing plates 10 of the row-level mirror image elements Rsm and the effective elements RS are thermally insulated from the CMOS measuring circuit system 1, so that the row-level mirror image elements Rsm and the effective elements RS have a self-heating effect.

When the corresponding row-level mirror image element Rsm is gated by the row selection switch K1, the resistance value of both the row-level mirror image element Rsm and the effective element RS changes due to joule heat, but when the row-level mirror image element Rsm and the effective element RS are subjected to the same fixed radiation, the resistance value of the row-level mirror image element Rsm and the resistance value of the effective element RS are the same, the temperature coefficients of the row-level mirror image element Rsm and the temperature coefficient of the effective element RS are also the same, the temperature drift amounts of the row-level mirror image element Rsm and the effective element RS at the same ambient temperature are the same, the change of the row-level mirror image element Rsm and the effective element RS at the same ambient temperature is synchronized, the resistance value change of the row-level mirror image element Rsm and the effective element RS due to the self-heating effect is effectively compensated, and the stable output of the CMOS measurement circuit system 1 is realized.

In addition, by arranging the second bias generating circuit 72 to include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 is configured to control the gate driving sub-circuits 722 to generate corresponding second bias voltages V2 respectively according to the row control signal, so that each row of pixels has one path to drive the whole columns of pixels of the row individually, the requirement for the second bias voltage V2 is reduced, that is, the driving capability of the bias generating circuit 7 is improved, and the CMOS measurement circuit system 1 is advantageously used to drive a larger-scale infrared detector pixel array. In addition, the specific detailed operation principle of the CMOS measurement circuit system 1 is well known to those skilled in the art and will not be described herein.

Alternatively, the CMOS infrared sensing structure 2 may be disposed on a metal interconnect layer of the CMOS measurement circuitry 1 or fabricated on the same layer. Specifically, the metal interconnection layer of the CMOS measurement circuitry 1 may be a top metal layer in the CMOS measurement circuitry 1, and in conjunction with fig. 1 to 13, the CMOS infrared sensing structure 2 may be fabricated on the metal interconnection layer of the CMOS measurement circuitry 1, and the CMOS infrared sensing structure 2 is electrically connected to the CMOS measurement circuitry 1 through a supporting base 42 on the metal interconnection layer of the CMOS measurement circuitry 1, so as to transmit the electrical signal converted by the infrared signal to the CMOS measurement circuitry 1.

Fig. 15 is a schematic cross-sectional view of another infrared detector provided in the embodiments of the present disclosure. As shown in fig. 15, the CMOS infrared sensing structure 2 may also be prepared on the same layer as the metal interconnection layer of the CMOS measurement circuitry 1, that is, the CMOS measurement circuitry 1 and the CMOS infrared sensing structure 2 are arranged on the same layer, for example, as shown in fig. 15, the CMOS infrared sensing structure 2 may be arranged on one side of the CMOS measurement circuitry 1, and the top of the CMOS measurement circuitry 1 may also be provided with a hermetic release isolation layer 3 to protect the CMOS measurement circuitry 1.

Optionally, the absorption plate 10 is configured to absorb an infrared target signal and convert the infrared target signal into an electrical signal, the absorption plate 10 includes a metal interconnection layer and at least one layer of heat sensitive dielectric layer, the metal interconnection layer in the absorption plate 10 is an electrode layer in the absorption plate 10 and is configured to transmit the electrical signal converted from the infrared signal, the electrode layer in the absorption plate 10 includes two patterned electrode structures, the two patterned electrode structures output a positive electrical signal and a ground electrical signal respectively, and the positive electrical signal and the ground electrical signal are transmitted to the corresponding support base 42 through different second pillar structures 62, different beam structures 11 and different first pillar structures 61 and are further transmitted to the CMOS measurement circuit system 1. The beam structure 11 comprises at least a metal interconnection layer, the metal interconnection layer in the beam structure 11 is an electrode layer in the beam structure 11, and the electrode layer in the beam structure 11 is electrically connected with the electrode layer in the absorber plate 10.

The first columnar structure 61 is connected to the corresponding beam structure 11 and the CMOS measurement circuit system 1 by using a metal interconnection process and a through hole process, with reference to fig. 2 to 8, 12 and 15, a through hole penetrating through the reflective layer 4 and the corresponding beam structure 11 is required above the first columnar structure 61, that is, a through hole of a sacrificial layer between the beam structures 11 directly electrically connected to the first columnar structure 61 is required to be electrically connected to the corresponding beam structure 11, that is, an electrode layer in the beam structure 11 directly electrically connected to the first columnar structure 61, a through hole penetrating through a dielectric layer on the supporting base 42 is required below the first columnar structure 6 to be electrically connected to the corresponding supporting base 42, and thus the electrode layer in the beam structure 11 is electrically connected to the corresponding supporting base 42 through the corresponding first columnar structure 61.

The second columnar structures 62 connect the corresponding absorber plates 10 with the corresponding beam structures 11 using a metal interconnection process and a via process, and referring to fig. 2 to 4, 6 to 8, 12 and 15, the upper side of the second columnar structures 62 needs to pass through the corresponding absorber plates 10, i.e. the absorber plate 10 and the corresponding beam structure 11 in direct electrical connection with the second columnar structure 62, i.e. the vias of the sacrificial layer between the beam structures 11, which are in direct electrical connection with the second pillar structures 62, and the corresponding absorber plates 10, i.e., the electrode layers in the absorber plate 10, which are directly electrically connected to the second columnar structures 62, the lower side of the second columnar structures 62 needs to be covered with the corresponding beam structures 11 by penetrating, i.e. the via holes covering the dielectric layer of the electrode layer in the beam structure 11 which is in direct electrical connection with the second pillar structures 62, the electrode layers in the beam structure 11 are electrically connected directly to the corresponding beam structure 11, i.e. to the second pillar structure 62. As shown in fig. 5, the upper side of the second columnar structure 62 needs to be electrically connected to the electrode layer in the corresponding beam structure 11, i.e., the beam structure 11 directly electrically connected to the second columnar structure 62, through a via hole penetrating through the sacrificial layer between the corresponding absorber plate 10, i.e., the absorber plate 10 directly electrically connected to the second columnar structure 62, and the corresponding beam structure 11, i.e., the beam structure 11 directly electrically connected to the second columnar structure 62, and the lower side of the second columnar structure 62 needs to be electrically connected to the electrode layer in the corresponding absorber plate 10, i.e., the absorber plate 10 directly electrically connected to the second columnar structure 62, through a via hole penetrating through the dielectric layer covering the electrode layer in the corresponding absorber plate 10, i.e., the absorber plate 10 directly electrically connected to the second columnar structure 62. The reflecting plate 41 is used for reflecting infrared signals and forms a resonant cavity with the heat-sensitive medium layer, that is, the reflecting plate 41 is used for reflecting infrared signals and forms a resonant cavity with the heat-sensitive medium layer, and the reflecting layer 4 comprises at least one metal interconnection layer which is used for forming a supporting base 42 and is also used for forming the reflecting plate 41.

Alternatively, it may be provided that the beam structure 11 includes the first electrode layer 14, or the beam structure 11 includes the first dielectric layer 13 and the first electrode layer 14, or the beam structure 11 includes the first electrode layer 14 and the second dielectric layer 15, or the beam structure 11 includes the first electrode layer 14 and the first heat-sensitive dielectric layer, or the beam structure 11 includes the first dielectric layer 13, the first electrode layer 14 and the second dielectric layer 15, or the beam structure 11 includes the first dielectric layer 13, the first electrode layer 14 and the first heat-sensitive dielectric layer, or the beam structure 11 includes the first electrode layer 14, the first heat-sensitive dielectric layer and the second dielectric layer 15, or the beam structure 11 includes the first dielectric layer 13, the first electrode layer 14, the first heat-sensitive dielectric layer and the second dielectric layer 15, or the absorber plate 10 includes the second electrode layer 140 and the second heat-sensitive dielectric layer 120, or the absorber plate 10 includes the third electrode layer 130, the second electrode layer 140 and the second heat-sensitive dielectric layer 120, or the absorber plate 10 includes the second electrode layer 140, the second heat-sensitive medium layer 120, and the fourth medium layer 150, or the absorber plate 10 includes the third medium layer 130, the second electrode layer 140, the second heat-sensitive medium layer 120, and the fourth medium layer 150; wherein, the material forming the first dielectric layer 13 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the second dielectric layer 15 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the third dielectric layer 130 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the fourth dielectric layer 150 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the first heat-sensitive dielectric layer includes at least one of materials prepared from titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous germanium-oxygen-silicon, germanium-oxygen-silicon, amorphous carbon, graphene, barium-copper-oxygen, copper or platinum, and the temperature coefficient of resistance is larger than the set value, the material constituting the second thermal sensitive medium layer 120 includes at least one of materials having a temperature coefficient of resistance greater than a predetermined value, which is, for example, 0.015/K, and is prepared from titanium oxide, vanadium titanium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon, germanium, silicon germanium oxide, amorphous carbon, graphene, yttrium barium copper oxide, copper, or platinum.

Specifically, with reference to fig. 2, fig. 5, fig. 7, fig. 12, and fig. 15, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes a first dielectric layer 13, a first electrode layer 14, and a second dielectric layer 15, the absorption plate 10 sequentially includes a third dielectric layer 130, a second electrode layer 140, and a second heat-sensitive dielectric layer 120, the material forming the first dielectric layer 13 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, or amorphous carbon, the material forming the second dielectric layer 15 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, or amorphous carbon, the material forming the third dielectric layer 130 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, or amorphous carbon, and the material forming the fourth dielectric layer 150 includes at least one of silicon oxide, silicon nitride, titanium oxide, or amorphous carbon, The first dielectric layer 13, which is at least one of silicon oxynitride, aluminum oxide, titanium oxide, or amorphous carbon, serves as a support layer for the beam structure 11, the second dielectric layer 15 serves as a passivation layer for the beam structure 11, the third dielectric layer 130 serves as a heat sensitive dielectric layer in the absorption plate 10 while serving as a support layer for the absorption plate 10 when the material constituting the third dielectric layer 130 includes titanium oxide or amorphous carbon, and the third dielectric layer 130 serves as a support layer for the absorption plate 10 when the material constituting the third dielectric layer 130 includes silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide. As shown in fig. 6, it may also be arranged along a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes a first dielectric layer 13, a first electrode layer 14, and a second dielectric layer 15, and the absorption plate 10 sequentially includes a third dielectric layer 130, a second electrode layer 140, a second heat-sensitive dielectric layer 120, and a fourth dielectric layer 150, at this time, the first dielectric layer 13 and the third dielectric layer 130 both serve as a support layer, the second dielectric layer 15 and the fourth dielectric layer 150 both serve as passivation layers, and the second heat-sensitive dielectric layer 120 converts an infrared signal into an electrical signal. Corresponding to the beam structure 11, the first electrode layer 14 is located in a closed space formed by the first dielectric layer 13, namely the support layer, and the second dielectric layer 15, namely the passivation layer, so that the first electrode layer 14 in the beam structure 11 is protected; corresponding to the absorber plate 10, the second electrode layer 140 is located in a closed space formed by the third dielectric layer 130, i.e., the support layer, and the fourth dielectric layer 150, i.e., the passivation layer, so that the second electrode layer 140 in the absorber plate 10 is protected. Specifically, the supporting layer is used for supporting a film layer located above the supporting layer after a sacrificial layer below the supporting layer is released, the heat-sensitive dielectric layer is used for converting infrared temperature detection signals into infrared detection electric signals, the second electrode layer 140 and the first electrode layer 14 are used for transmitting the infrared detection electric signals converted from the heat-sensitive dielectric layer in the absorption plate 10 to the CMOS measurement circuit system 1 through the beam structures 11 on the left side and the right side, the two beam structures 11 respectively transmit positive and negative signals of the infrared detection electric signals, a reading circuit in the CMOS measurement circuit system 1 realizes non-contact infrared temperature detection through analysis of the acquired infrared detection electric signals, and the passivation layer is used for protecting an electrode layer wrapped by the passivation layer from oxidation or corrosion.

Illustratively, on the premise that the material forming the first dielectric layer 13 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the second dielectric layer 15 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material forming the third dielectric layer 130 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, and the material forming the fourth dielectric layer 150 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the film layers in the beam structure 11 and the absorber plate 10 may further satisfy the following conditions: the first case may be that the beam structure 11 comprises a first electrode layer 14, and the absorber plate 10 comprises a second electrode layer 140 and a second heat sensitive medium layer 120 in sequence or the absorber plate 10 comprises a second heat sensitive medium layer 120 and a second electrode layer 140 in sequence in a direction away from the CMOS measurement circuitry 1; in a second case, the beam structure 11 may be configured to include the first electrode layer 14, and along a direction away from the CMOS measurement circuit system 1, the absorber plate 10 sequentially includes the third dielectric layer 130, the second electrode layer 140, and the second heat-sensitive dielectric layer 120, or the absorber plate 10 sequentially includes the third dielectric layer 130, the second heat-sensitive dielectric layer 120, and the second electrode layer 140; in a third case, the beam structure 11 may be configured to include the first electrode layer 14, and the absorption plate 10 sequentially includes the second electrode layer 140, the second heat-sensitive medium layer 120, and the fourth medium layer 150 along a direction away from the CMOS measurement circuit system 1, or the absorption plate 10 sequentially includes the second heat-sensitive medium layer 120, the second electrode layer 140, and the fourth medium layer 150; a fourth case may be that the beam structure 11 includes the first electrode layer 14, and the absorber plate 10 includes a third dielectric layer 130, a second electrode layer 140, a second heat-sensitive dielectric layer 120, and a fourth dielectric layer 150 in sequence along a direction away from the CMOS measurement circuit system 1, or the absorber plate 10 includes a third dielectric layer 130, a second heat-sensitive dielectric layer 120, a second electrode layer 140, and a fourth dielectric layer 150 in sequence.

A fifth case may be set along a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the first dielectric layer 13 and the first electrode layer 14 or the beam structure 11 sequentially includes the first electrode layer 14 and the second dielectric layer 15, the absorber plate 10 sequentially includes the second electrode layer 140 and the second heat-sensitive dielectric layer 120 or the absorber plate 10 sequentially includes the second heat-sensitive dielectric layer 120 and the second electrode layer 140; in a sixth case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the first dielectric layer 13 and the first electrode layer 14 or the beam structure 11 sequentially includes the first electrode layer 14 and the second dielectric layer 15, the absorber plate 10 sequentially includes the third dielectric layer 130, the second electrode layer 140, and the second heat-sensitive dielectric layer 120, or the absorber plate 10 sequentially includes the third dielectric layer 130, the second heat-sensitive dielectric layer 120, and the second electrode layer 140; a seventh situation may be that the beam structure 11 sequentially includes the first dielectric layer 13 and the first electrode layer 14 or the beam structure 11 sequentially includes the first electrode layer 14 and the second dielectric layer 15, the absorber plate 10 sequentially includes the second electrode layer 140, the second heat-sensitive dielectric layer 120, and the fourth dielectric layer 150 or the absorber plate 10 sequentially includes the second heat-sensitive dielectric layer 120, the second electrode layer 140, and the fourth dielectric layer 150 along a direction away from the CMOS measurement circuit system 1; in an eighth case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and the beam structure 11 sequentially includes the first dielectric layer 13 and the first electrode layer 14, or the beam structure 11 sequentially includes the first electrode layer 14 and the second dielectric layer 15, and the absorption plate 10 sequentially includes the third dielectric layer 130, the second electrode layer 140, the second heat-sensitive dielectric layer 120, and the fourth dielectric layer 150, or the absorption plate 10 sequentially includes the third dielectric layer 130, the second heat-sensitive dielectric layer 120, the second electrode layer 140, and the fourth dielectric layer 150.

A ninth case may be set in a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the first electrode layer 14 and the first heat-sensitive medium layer, and the absorption plate 10 sequentially includes the second electrode layer 140 and the second heat-sensitive medium layer 120, or the beam structure 11 sequentially includes the first heat-sensitive medium layer and the first electrode layer 14, and the absorption plate 10 sequentially includes the second heat-sensitive medium layer 120 and the second electrode layer 140; in a tenth case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and the beam structure 11 sequentially includes the first electrode layer 14 and the first heat-sensitive medium layer, and the absorption plate 10 sequentially includes the third medium layer 130, the second electrode layer 140 and the second heat-sensitive medium layer 120, or the beam structure 11 sequentially includes the first heat-sensitive medium layer and the first electrode layer 14, and the absorption plate 10 sequentially includes the third medium layer 130, the second heat-sensitive medium layer 120 and the second electrode layer 140; in an eleventh case, it may be arranged that along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes the first electrode layer 14 and the first heat-sensitive medium layer, and the absorption plate 10 sequentially includes the second electrode layer 140, the second heat-sensitive medium layer 120, and the fourth medium layer 150, or the beam structure 11 sequentially includes the first heat-sensitive medium layer and the first electrode layer 14, and the absorption plate 10 sequentially includes the second heat-sensitive medium layer 120, the second electrode layer 140, and the fourth medium layer 150; a twelfth case may be set along a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the first electrode layer 14 and the first heat-sensitive medium layer, and the absorption plate 10 sequentially includes the third medium layer 130, the second electrode layer 140, the second heat-sensitive medium layer 120, and the fourth medium layer 150, or the beam structure 11 sequentially includes the first heat-sensitive medium layer and the first electrode layer 14, and the absorption plate 10 sequentially includes the third medium layer 130, the second heat-sensitive medium layer 120, the second electrode layer 140, and the fourth medium layer 150.

Referring to the above discussion logic of the different cases, when the material of the first dielectric layer 13 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material of the second dielectric layer 15 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material of the third dielectric layer 130 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, the material of the fourth dielectric layer 150 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or amorphous carbon, there may be a plurality of combinations of the case of the film of the beam structure 11 and the case of the film of the absorption plate 10, that is, the case of the film of the beam structure 11 and the case of the film of the absorption plate 10 may be arbitrarily combined to form an infrared detector with a plurality of structures, and will not be described in detail herein. It should be noted that, whatever the above-mentioned film layer arrangement scheme of the beam structure 11 and the absorption plate 10, it is necessary to ensure that at least the first electrode layer 14 is in the beam structure 11, and at least the second electrode layer 140 is in the absorption plate 12, and the dielectric layer is used as a heat sensitive dielectric layer. In addition, when the material forming the thermal sensitive medium layer 12 includes amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium, etc., the thermal sensitive medium layer 12 is preferably wrapped by the medium layer to prevent the etching gas releasing the sacrificial layer from corroding the thermal sensitive medium layer 12.

Illustratively, the material constituting the first electrode layer 14 may be set to include at least one of titanium, titanium nitride, tantalum nitride, titanium tungsten alloy, nickel chromium alloy, nickel platinum alloy, nickel silicon alloy, nickel, chromium, platinum, tungsten, aluminum, or copper, wherein when the material of the first electrode layer 14 is at least one of titanium, titanium nitride, tantalum, or tantalum nitride, it is preferable to set the first electrode layer 14 to be covered by the first dielectric layer 13 and the second dielectric layer 15, preventing the first electrode layer 14 from being affected by the etching process. The material constituting the second electrode layer 140 includes at least one of titanium, titanium nitride, tantalum nitride, titanium tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum, or copper, wherein when at least one of titanium, titanium nitride, tantalum, or tantalum nitride is used as the material of the second electrode layer 140, it is preferable that the second electrode layer 140 is covered by the third dielectric layer 130 and the fourth dielectric layer 150 to prevent the second electrode layer 140 from being affected by the etching process.

In addition, in the above-described embodiment, at least one hole-like structure may be formed on the absorption plate 10, the hole-like structure at least penetrates through the dielectric layer in the absorption plate 10, at least one hole-like structure is formed on the beam structure 11, when the beam structure 11 only includes the first electrode layer 14, the hole-like structure on the beam structure 11 penetrates through the first electrode layer 14 in the beam structure 11, when the beam structure 11 includes the dielectric layer, the hole-like structure at least penetrates through the dielectric layer in the beam structure 11, taking the infrared detector of the structure shown in fig. 6 as an example, at this time, the hole-like structure on the absorption plate 10 may penetrate through the third dielectric layer 130 and the fourth dielectric layer 150 in the absorption plate 10, the hole-like structure on the absorption plate 10 may penetrate through the third dielectric layer 130, the second electrode layer 140 and the fourth dielectric layer 150 in the absorption plate 10, and the hole-like structure on the absorption plate 10 may penetrate through the third dielectric layer 130 and the fourth dielectric layer 150 in the absorption plate 10, A second electrode layer 140, a second heat-sensitive medium layer 120 and a fourth medium layer 150, the hole structure on the beam structure 11 may penetrate through the first medium layer 13 and the second medium layer 15 at the position where the electric first electrode layer 14 is not arranged in the beam structure 11, or the hole structure on the beam structure 11 penetrates through the first medium layer 13, the electrode layer 14 and the second medium layer 15 in the beam structure 11.

Optionally, the infrared detector may further include a metamaterial structure and/or a polarization structure, and the metamaterial structure or the polarization structure is at least one metal interconnection layer. Fig. 16 is a schematic perspective view of another infrared detector provided in an embodiment of the present disclosure, and as shown in fig. 16, a metal interconnection layer forming a metamaterial structure may include a plurality of metal repeating units 20 arranged in an array, each metal repeating unit includes two diagonally arranged L-shaped patterned structures 21, where an infrared absorption spectrum band of the infrared detector is a 3 micron to 30 micron band. As shown in fig. 17, a plurality of patterned hollow structures 22 arranged in an array may be disposed on the metal interconnection layer forming the metamaterial structure, the patterned hollow structures 22 are in an open ring shape, and an infrared absorption spectrum band of the infrared detector is a band of 3 micrometers to 30 micrometers. As shown in fig. 18, a plurality of linear stripe structures 23 and a plurality of folded stripe structures 24 are disposed on the metal interconnection layer forming the metamaterial structure, and the linear stripe structures 23 and the folded stripe structures 24 are alternately arranged along a direction perpendicular to the linear stripe structures 23, where an infrared absorption spectrum band of the infrared detector is a band of 8 micrometers to 24 micrometers. As shown in fig. 19, a plurality of patterned hollow structures 25 arranged in an array may be disposed on the metal interconnection layer forming the metamaterial structure, the patterned hollow structures 25 are regular hexagons, and the infrared absorption spectrum band of the infrared detector is a 3-30 μm band. It should be noted that, in the embodiments of the present disclosure, specific patterns on the metal interconnection layer constituting the metamaterial structure are not limited, and it is sufficient to ensure that the repeated patterns can realize the functions of the metamaterial structure or the polarization structure.

Specifically, the metamaterial is a material which is based on the generalized snell's law and performs electromagnetic or optical beam regulation and control by controlling wave front phase, amplitude and polarization, and can be also called as a super surface or a super structure, wherein the super surface or the super structure is an ultrathin two-dimensional array plane, and the characteristics of electromagnetic waves such as phase, polarization mode, propagation mode and the like can be flexibly and effectively manipulated. The disclosed embodiments form an electromagnetic metamaterial structure using the patterned structure as shown in figures 16-19, namely, an artificial composite structure or a composite material with supernormal electromagnetic property is formed to realize the cutting of the electromagnetic wave and light wave properties, therefore, an electromagnetic wave absorption special device is obtained, the metamaterial structure formed by the patterned structure is combined with the infrared detector structure, infrared electromagnetic waves absorbed by the metamaterial structure can enhance infrared electromagnetic wave signals absorbed by the infrared detector, the infrared electromagnetic waves absorbed by the metamaterial structure are overlapped with the infrared electromagnetic waves absorbed by the microbridge detector structure, the infrared electromagnetic waves absorbed by the metamaterial structure are coupled with components of incident infrared electromagnetic waves, namely, the intensity of the absorbed infrared electromagnetic wave signals is increased due to the arrangement of the metamaterial structure, and therefore the absorption rate of the infrared detector to the incident infrared electromagnetic waves is improved.

Fig. 20 is a schematic top view of a polarization structure according to an embodiment of the present disclosure. As shown in fig. 20, the polarization structure 26 may include a plurality of gratings 27 arranged in sequence, an interval between adjacent gratings 27 is 10nm to 500nm, the gratings 27 may be linear as shown in fig. 20, or may be curved as shown in fig. 21 and 22, the gratings 27 in the polarization structure 26 may be rotated or combined at any angle, and the polarization structure 26 may be disposed such that the CMOS sensing structure absorbs polarized light in a specific direction. Illustratively, the grating 27 may be a structure formed by etching a metal thin film, i.e., a metal interconnection layer. Specifically, polarization is an important information of light, and polarization detection can expand the information quantity from three dimensions, such as light intensity, light spectrum and space, to seven dimensions, such as light intensity, light spectrum, space, polarization degree, polarization azimuth angle, polarization ellipse ratio and rotation direction, and since the polarization degree of the ground object background is far less than that of the artificial target, the infrared polarization detection technology has very important application in the field of space remote sensing. In the existing polarization detection system, a polarization element is independent of a detector, and a polarizing film needs to be added on a lens of the whole machine or a polarization lens needs to be designed. The existing polarization detection system, which acquires polarization information by rotating a polarization element, has disadvantages of complicated optical elements and complicated optical path system. In addition, the polarization image acquired by combining the polarizer and the detector needs to be processed by an image fusion algorithm, which is not only complex but also relatively inaccurate.

According to the embodiment of the disclosure, the polarization structure 26 and the uncooled infrared detector are monolithically integrated, so that not only can monolithic integration of the polarization-sensitive infrared detector be realized, but also the difficulty of optical design is greatly reduced, the optical system is simplified, optical elements are reduced, and the cost of the optical system is reduced. In addition, the image collected by the single-chip integrated polarization uncooled infrared detector is original infrared image information, the CMOS measuring circuit system 1 can obtain accurate image information only by processing signals detected by the infrared detector, image fusion of the existing detector is not needed, and authenticity and effectiveness of the image are greatly improved. In addition, the polarization structure 26 may also be located above the absorption plate 10 and not be in contact with the absorption plate 10, that is, the polarization structure 26 may be a suspended structure located above the suspended microbridge structure 40, the polarization structure 26 and the suspended microbridge structure 40 may be supported by column connection or by bonding, the polarization structure 26 and the infrared detector pixels may be bonded in one-to-one correspondence, or by bonding the entire chip. Therefore, the independent suspended metal grating structure cannot cause deformation of the infrared sensitive micro-bridge structure and cannot influence the heat-sensitive characteristic of the sensitive film.

Illustratively, referring to fig. 1 to fig. 22, when the metamaterial structure is at least one metal interconnection layer, the polarization structure is at least one metal interconnection layer, and the suspended microbridge structure 40 includes the third dielectric layer 130 and the fourth dielectric layer 150, the metamaterial structure or the polarization structure may be at least one metal interconnection layer on a side of the third dielectric layer 130 adjacent to the CMOS measurement circuit system 1, for example, the metal interconnection layer constituting the metamaterial structure or the polarization structure may be disposed on a side of the third dielectric layer 130 adjacent to the CMOS measurement circuit system 1 and in contact with the third dielectric layer 130. For example, the metamaterial structure or the polarization structure may be at least one metal interconnection layer on the side of the fourth dielectric layer 150 away from the CMOS measurement circuitry 1, and for example, the metal interconnection layer constituting the metamaterial structure or the polarization structure may be disposed on the side of the fourth dielectric layer 150 away from the CMOS measurement circuitry 1 and in contact with the fourth dielectric layer 150. For example, the metamaterial structure or the polarization structure may be at least one metal interconnection layer located between the third dielectric layer 130 and the fourth dielectric layer 150 and electrically insulated from the second electrode layer 140, for example, the metal interconnection layer constituting the metamaterial structure or the polarization structure may be located between the third dielectric layer 130 and the second electrode layer 140 and electrically insulated from the second electrode layer 140 or located between the fourth dielectric layer 150 and the second electrode layer 140 and electrically insulated from the second electrode layer 140. For example, the second electrode layer 140 may also be disposed as a metamaterial structure layer or a polarization structure layer, that is, the patterned structure described in the above embodiments may be formed on the second electrode layer 140.

Alternatively, in conjunction with fig. 6 and 7, it may be provided that the first pillar-shaped structure 61 includes at least one layer of solid pillar-shaped structure, the solid pillar-shaped structure includes a solid structure 601, the sidewall of the solid structure 601 exemplarily provided with the first pillar-shaped structure 61 is clad with at least one dielectric layer 602 and the solid structure 601 is disposed in contact with the dielectric layer 602, the sidewall of the solid structure 601 exemplarily provided with the first pillar-shaped structure 61 is clad with the dielectric layer 602 and the solid structure 601 is disposed in contact with the dielectric layer 602, the material constituting the solid structure 601 of the first pillar-shaped structure 61 includes at least one of tungsten, copper or aluminum, the material constituting the dielectric layer 602 may include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, graphene, yttrium barium copper oxide, barium oxide, silicon nitride oxide, silicon oxynitride, silicon nitride, silicon carbide, amorphous carbon nitride, aluminum oxide, titanium oxide, vanadium oxide, graphene, yttrium barium oxide, and aluminum oxide, At least one of copper or platinum.

Specifically, at least one dielectric layer 602 of the solid structure 601 covering the first columnar structure 61 can play a role in electrical insulation, and while the solid structure 601 of the first columnar structure 61 is protected by the dielectric layer 602 to prevent an external material from eroding the solid structure 601 of the first columnar structure 61, the dielectric layer 602 can serve as an auxiliary support structure of the first columnar structure 61, and supports the suspended micro-bridge structure 40 together with the solid structure 601 of the first columnar structure 61, which is beneficial to improving the mechanical stability of the first columnar structure 61, thereby improving the structural stability of the infrared sensor. In addition, the material of the dielectric layer 602 forming the first columnar structure 61 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, graphene, yttrium barium copper oxide, copper or platinum, and none of the above materials is corroded by xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride or chlorofluorohydrocarbon, so that the dielectric layer 602 covering the solid structure 601 of the first columnar structure 61 is not corroded when the sacrificial layer is corroded by xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride or chlorofluorohydrocarbon in the subsequent process steps. For example, as shown in fig. 6 and 7, the dielectric layer 602 covering the solid structure 601 of the first columnar structure 61 may be set as the first dielectric layer 13 in the beam structure 11, the dielectric layer covering the solid structure 601 of the first columnar structure 61 may be a separately manufactured dielectric layer, or the dielectric layer covering the solid structure 601 of the first columnar structure 61 may also be set as the second dielectric layer 15 or the first heat-sensitive dielectric layer in the beam structure 11.

Fig. 23 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present disclosure. Fig. 23 shows only the first columnar structure 61 and a part of the beam structure 11 by way of example, the structure above the beam structure 11 is not shown, and unlike the infrared detector of the structures shown in fig. 6 and 7, the infrared detector of the structure shown in fig. 23 is arranged such that the side wall of the solid structure 601 of the first columnar structure 61 is arranged in contact with a sacrificial layer (not shown in fig. 23) which is the corresponding beam structure 11, that is, a sacrificial layer between the beam structure 11 directly electrically connected to the first columnar structure 61 and the CMOS measurement circuit system 1, the material constituting the solid structure 601 of the first columnar structure 61 comprises at least one of tungsten, copper or aluminum, that is, the first columnar structure 61 is arranged to comprise only a solid tungsten column, or a copper column or an aluminum column, the side wall of the solid structure 601 of the first columnar structure 61 is arranged in contact with the sacrificial layer, so that the manufacturing process of the first columnar structure 61 is simpler and easier to implement, the preparation difficulty of the whole infrared detector is favorably reduced.

Fig. 24 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure. Fig. 24 also only exemplarily shows the first columnar structure 61 and a part of the beam structure 11, the structure above the beam structure 11 is not shown, and unlike the infrared detector having the structure shown in fig. 6, 7 and 23, the infrared detector having the structure shown in fig. 24 is provided with the sidewall of the solid structure 601 of the first columnar structure 61 and the surface of the solid structure 601 of the first columnar structure 61 adjacent to the CMOS measurement circuitry 1 being coated with at least one adhesive layer 603, fig. 24 exemplarily is provided with the sidewall of the solid structure 601 of the first columnar structure 61 and the surface of the solid structure 601 of the first columnar structure 61 adjacent to the CMOS measurement circuitry 1 being coated with an adhesive layer 603, the sidewall of the solid structure 601 of the inner periphery of the first columnar structure 61 away from the first columnar structure 61 being coated with a dielectric layer 604, and the material constituting the solid structure 601 of the first columnar structure 61 comprises tungsten, Copper or aluminum, the material forming the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum, or tantalum nitride, and the material forming the dielectric layer 604 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, graphene, yttrium barium copper oxide, copper, or platinum.

Specifically, adhesion layer 603 is used for reinforcing the connection performance between first columnar structure 61 and the support base 42, including intensifier mechanical connection performance, promote structural stability, also include intensifier electricity connection performance, reduce contact resistance, reduce the loss among the signal transmission process, infrared detector's infrared detection performance has been promoted, and still surround the side of first columnar structure 61's solid structure 601 through setting up adhesion layer 603, can increase adhesion layer 603 and first columnar structure 61's solid structure 601's area of contact, be equivalent to the transmission channel who widens the signal of telecommunication, the transmission resistance of first columnar structure 61 has been reduced, thereby further reduced signal transmission loss, infrared detector's infrared detection performance has been promoted. In addition, the material forming the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum, or tantalum nitride, and the adhesion layer 603 is formed by using at least one of the foregoing four conductive materials, so that the requirement of enhancing the mechanical and electrical connection performance between the supporting base 42 and the first columnar structure 61 by using the adhesion layer 603 can be satisfied, and the requirement of preparing the adhesion layer 603 by using a CMOS process, that is, the requirement of integrating the CMOS process, can be satisfied.

The side wall of the solid structure 601, far away from the first columnar structure 61, of the adhesion layer 603 on the outermost periphery in the first columnar structure 61 is further coated with the dielectric layer 604, the adhesion layer 603 is utilized to enhance the connection performance between the first columnar structure 61 and the supporting base 42, meanwhile, the dielectric layer 604 coating the side wall of the adhesion layer 603 plays a role in insulation protection, and the dielectric layer 604 can be utilized to play a role in auxiliary support of the first columnar structure 61, so that the structural stability and the infrared detection performance of the infrared detector are improved. Similarly, the dielectric layer 604 may be formed of a material including at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, graphene, yttrium barium copper oxide, copper, or platinum, which are not corroded by xenon fluoride, chlorine, bromine, carbon tetrachloride, or chlorofluorocarbons, and thus do not corrode the dielectric layer 604 covering the adhesion layer 603 when the sacrificial layer is corroded by xenon fluoride, chlorine, bromine, carbon tetrachloride, or chlorofluorocarbons in subsequent process steps. For example, as shown in fig. 24, the adhesion layer 603 covering the solid structure 601 of the first columnar structure 61 may be set as the first electrode layer 14 in the beam structure 11, the dielectric layer 604 covering the adhesion layer 603 is the first dielectric layer 13 in the beam structure 11, and the adhesion layer 603 covering the solid structure 601 of the first columnar structure 61 and/or the dielectric layer covering the adhesion layer 603 may also be a separately fabricated film layer, or the dielectric layer covering the adhesion layer 603 may also be set as the second dielectric layer 15 or the first heat-sensitive dielectric layer in the beam structure 11.

Optionally, with reference to fig. 23 and fig. 24, the infrared detector may further include a first reinforcing structure 161, where the first reinforcing structure 161 is disposed corresponding to the position of the first columnar structure 61, the first reinforcing structure 161 is used to enhance the connection stability between the first columnar structure 61 and the beam structure 11, and the first reinforcing structure 161 includes a weighted block structure. Specifically, the arrangement of the first reinforcing structure 161 can effectively enhance the mechanical stability between the first columnar structure 61 and the beam structure 11, so as to improve the structural stability of the infrared detector pixel and the infrared detector including the infrared detector pixel.

Fig. 25 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure. Fig. 25 also shows only the first columnar structure 61 and a part of the beam structure 11 by way of example, the structure above the beam structure 11 is not shown, and as shown in fig. 25, a weighted block structure constituting the first reinforcing structure 161 may be provided on a side of the beam structure 11 away from the CMOS measurement circuitry 1 and the weighted block structure constituting the first reinforcing structure 161 is provided in contact with the beam structure 11. Specifically, the weighted block structure forming the first reinforcing structure 161 is disposed on one side of the beam structure 11 away from the CMOS measurement circuit system 1, and the weighted block structure forming the first reinforcing structure 161 is disposed in contact with the beam structure 11, which is equivalent to adding a cover plate at a position of the beam structure 11 corresponding to the first columnar structure 61, and pressing the beam structure by using the self weight of the first reinforcing structure 161, so as to enhance the mechanical strength between the beam structure 11 and the first columnar structure 61, and improve the structural stability of the infrared detector.

Exemplarily, with reference to fig. 23 and 24, it may also be provided that the beam structure 11 is formed with a through hole corresponding to the position of the first columnar structure 61, the through hole exposes at least a part of the first columnar structure 61, the weighted block structure constituting the first reinforcing structure 161 includes a first portion filling the through hole and a second portion located outside the through hole, and an orthographic projection of the second portion covers an orthographic projection of the first portion. Specifically, the beam structure 11 forms a hollow area corresponding to the position of the first columnar structure 61, that is, a through hole is formed, a second portion of the weighting block structure forming the first reinforcing structure 161 outside the through hole is integrally formed with a first portion of the weighting block structure inside the through hole, the first portion is filled or embedded into the through hole and is in contact with the first columnar structure 61, an orthographic projection of the second portion covers an orthographic projection of the first portion, that is, the area of the second portion is larger than that of the first portion. In the infrared detector pixel, the first reinforcing structure 161 is equivalent to a rivet structure composed of a first part and a second part, the bottom surface of the first part contacts the top surface of the columnar structure, the side surface of the first part also contacts the side surface of a hollow area formed by the beam structure, and the lower surface of the second part contacts the outer surface of the through hole. Therefore, when the first reinforcing structure 161 is pressed against the beam structure 11 by the gravity of the first reinforcing structure 161, the contact area between the first reinforcing structure 161 and the first columnar structure 61 and the beam structure 11 is increased, the mechanical strength between the beam structure 11 and the first columnar structure 61 is further increased, and the structural stability of the infrared detector is improved.

Illustratively, the material that may be provided to constitute the weighted bulk structure of the first reinforcing structure 161 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon oxide, silicon oxynitride, silicon oxycarbide, titanium oxide, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium tungsten alloy, nickel chromium alloy, nickel platinum alloy, or nickel silicon alloy. Specifically, the first reinforcing structure 161 may be a single layer structure deposited by a medium or a metal, or may be a multi-layer structure formed by stacking two, three or more single layer structures, and none of the amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, and nickel-silicon alloy is corroded by xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride, or chlorofluorocarbon, so that the first reinforcing structure 161 is not affected in the subsequent process of corroding the sacrificial layer with xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride or chlorofluorocarbons to release the sacrificial layer, thereby ensure to set up the mechanical strength that first reinforced structure 161 can strengthen beam structure 11 and first columnar structure 61 junction, prevent to take place to drop because of being connected insecurely between beam structure 11 and the first columnar structure 6 to promote infrared detector's structural stability. In addition, when the material constituting the reinforcing structure 16 includes amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium or silicon germanium, the reinforcing structure 16 may be preferably disposed in the enclosed space enclosed by the first dielectric layer 13 and the second dielectric layer 15 to prevent the etching gas releasing the sacrificial layer from corroding the reinforcing structure 16.

Alternatively, in conjunction with fig. 6 and 8, the second columnar structure 62 may be provided to include at least one layer of solid columnar structure, the solid columnar structure including a solid structure 605, the solid structure 605 of fig. 6 and 8 illustratively provided the second columnar structure 62 having sidewalls clad with at least one dielectric layer 606 and the solid structure 605 of the second columnar structure 62 being provided in contact with one dielectric layer 606, the solid structure 605 of fig. 6 and 8 exemplarily provided the second columnar structure 62 having sidewalls clad with one dielectric layer 606 and the solid structure 605 of the second columnar structure 62 being provided in contact with the dielectric layer 606, the solid structure 605 of the second columnar structure 62 comprising a material including at least one of tungsten, copper, or aluminum, the dielectric layer 606 comprising a material that may include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbide, amorphous carbon, silicon oxynitride, titanium oxide, or a combination thereof, At least one of vanadium oxide, vanadium titanium oxide, graphene, yttrium barium copper oxide, copper or platinum.

Specifically, at least one dielectric layer 606 of the solid structure 605 coating the second columnar structure 62 can play a role in electrical insulation, the dielectric layer 606 can be used for protecting the solid structure 605 of the second columnar structure 62 so as to prevent an external material from corroding the solid structure 605 of the second columnar structure 62, and meanwhile, the dielectric layer 606 can be used as an auxiliary supporting structure of the second columnar structure 62, when the beam structure 11 is located on one side of the absorption plate 10 close to the CMOS measurement circuit system 1, the dielectric layer 606 and the solid structure 605 of the second columnar structure 62 support the absorption plate 10 together, which is beneficial for improving the mechanical stability of the second columnar structure 62, and thus the structural stability of the infrared sensor is improved. In addition, the material of the dielectric layer 606 forming the first columnar structure 62 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, graphene, yttrium barium copper oxide, copper, or platinum, and none of the foregoing materials is corroded by xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride, or chlorofluorocarbon, so that the dielectric layer 606 of the solid structure 605 covering the second columnar structure 62 is not corroded when the sacrificial layer is corroded by xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride, or chlorofluorocarbon in the subsequent process steps. Illustratively, as shown in fig. 6 and 8, the dielectric layer 606 covering the solid structure 605 of the second pillar structure 62 may be the third dielectric layer 130 in the absorber plate 10, the dielectric layer covering the solid structure 605 of the second pillar structure 62 may also be a separately manufactured dielectric layer, or the dielectric layer covering the solid structure 605 of the second pillar structure 62 may also be the fourth dielectric layer 150 or the second heat-sensitive dielectric layer 120 in the absorber plate 10.

For example, in analogy with the arrangement manner of the first columnar structure 61 in the structure shown in fig. 23, the sidewall of the solid structure 605 of the second columnar structure 62 may be disposed in contact with a sacrificial layer, where the sacrificial layer is a sacrificial layer between the corresponding absorption plate 10, that is, the absorption plate 10 directly electrically connected to the second columnar structure 62 and the corresponding beam structure 11, that is, the beam structure 11 directly electrically connected to the second columnar structure 62, that is, the sacrificial layer is a sacrificial layer corresponding to the second columnar structure 62, a material of the solid structure 605 constituting the second columnar structure 62 may include at least one of tungsten, copper, or aluminum, and specific effects of the film layer in the second columnar structure 62 and the second columnar structure 62 are similar to those of the first columnar structure 61 shown in fig. 23 and are not repeated here. In a manner similar to the arrangement of the first columnar structure 61 in the structure shown in fig. 24, the sidewall of the solid structure 605 of the second columnar structure 62 and the surface of the solid structure 605 of the second columnar structure 62 adjacent to the CMOS measurement circuit system 1 are coated with at least one adhesive layer, the sidewall of the solid structure 605 of the second columnar structure 62 away from the outermost adhesive layer is coated with a dielectric layer, the material of the solid structure 605 of the second columnar structure 62 includes at least one of tungsten, copper or aluminum, the material of the adhesive layer of the second columnar structure 62 includes at least one of titanium, titanium nitride, tantalum or tantalum nitride, and the material of the dielectric layer of the second columnar structure 62 includes silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, vanadium titanium oxide, vanadium carbonitride, silicon carbide, silicon carbonitride, amorphous carbon, silicon carbide, aluminum nitride, titanium oxide, and vanadium oxide, The specific effects of at least one of graphene, yb-ba-cu-o, copper, or platinum, the film layer in the second columnar structure 62, and the second columnar structure 62 are similar to the effects of the first columnar structure 61 shown in fig. 24, and are not described herein again.

Similarly, in analogy with the arrangement of the first reinforcing structure 161 corresponding to the first columnar structure 61 in the structures shown in fig. 23, fig. 24 and fig. 25, the infrared detector may further include a second reinforcing structure, the second reinforcing structure is arranged corresponding to the position of the second columnar structure 62 and is located on the side of the second columnar structure 62 away from the CMOS measurement circuit system 1, the beam structure 11 is located on the side of the absorption plate 10 close to the CMOS measurement circuit system 1, the second reinforcing structure is used for enhancing the connection stability between the second columnar structure 62 and the absorption plate 10, and the second reinforcing structure includes a weighted block-shaped structure.

In analogy to the arrangement of the first reinforcing structure 161 corresponding to the first columnar structure 61 in the structure shown in fig. 25, a weighted block structure constituting the second reinforcing structure may be arranged on the side of the absorbing plate 10 away from the CMOS measurement circuit system 1, and the weighted block structure constituting the second reinforcing structure may be arranged in contact with the absorbing plate 10, and the principle of the second reinforcing structure for reinforcing is similar to the principle of the first reinforcing structure 161 in the structure shown in fig. 25 for reinforcing, and is not described here again. Or, by analogy with the arrangement manner of the first reinforcing structure 161 corresponding to the first columnar structure 61 in the structures shown in fig. 23 and 24, a through hole may be formed at a position of the absorption plate 10 corresponding to the second columnar structure 62, at least a part of the second columnar structure 62 is exposed by the through hole, the weighted block-shaped structure forming the second reinforcing structure includes a first part filling the through hole and a second part located outside the through hole, an orthographic projection of the second part covers an orthographic projection of the first part, and the principle that the second reinforcing structure plays a reinforcing role is similar to the principle that the first reinforcing structure 161 of the structures shown in fig. 23 and 24 plays a reinforcing role, and is not repeated herein. In addition, the material used for the weighted mass structure forming the second reinforcing structure may be the same as the material used for the weighted mass structure forming the first reinforcing structure 161, and will not be described in detail here.

Alternatively, in conjunction with fig. 2 and 8, it may be provided that the first columnar structure 61 includes at least one layer of hollow columnar structure, and fig. 2 and 8 exemplarily provide that the first columnar structure 61 includes one layer of hollow columnar structure, at least the first electrode layer 14 is disposed in the hollow columnar structure, and the first electrode layer 14 in the hollow columnar structure is electrically connected with the first electrode layer 14 in the beam structure 11, the second electrode layer 140 in the absorber plate 10, and the support base 42, so as to ensure that the electrical signal generated by the absorber plate 10 is transmitted to the CMOS measurement circuit system 1. Fig. 2 and 8 exemplarily set up that the first electrode layer 14 and the dielectric layers respectively located at two sides of the first electrode layer 14 are disposed in the hollow columnar structure forming the first columnar structure 61, and the dielectric layers at two sides achieve effective protection of the first electrode layer 14, prevent the first electrode layer 14 from being oxidized or corroded, and optimize the electrical transmission characteristics of the infrared detector. Illustratively, the dielectric layer in the first columnar structure 61 below the first electrode layer 14 may be, for example, the first dielectric layer 13 in the beam structure 11, the dielectric layer above the first electrode layer 14 may be, for example, the second dielectric layer 15 in the beam structure 11, and the dielectric layers on both sides of the first electrode layer 14 may also be separately fabricated film layers. In addition, the first columnar structure 61 may be provided, and no dielectric layer is disposed above and/or below the first electrode layer 14, that is, only the dielectric layer is disposed below the first electrode layer 14 in the hollow columnar structure, only the dielectric layer is disposed above the first electrode layer 14, or only the first electrode layer 14 is disposed in the hollow columnar structure, and no dielectric layer is wrapped outside the first electrode layer 14.

Fig. 26 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the disclosure. Fig. 26 only shows the first columnar structure 61 and a part of the beam structure 11 by way of example, the structure above the beam structure 11 is not shown, as shown in fig. 26, the infrared detector may further include a first reinforcing structure 162, the first reinforcing structure 162 is disposed corresponding to the position of the first columnar structure 61, and when the first columnar structure 61 is a hollow columnar structure, the first reinforcing structure 162 is used for enhancing the connection stability between the first columnar structure 61 and the beam structure 11 and between the first columnar structure 61 and the reflective layer 4, that is, between the first columnar structure 61 and the supporting base 42. For example, the first reinforcing structure 162 corresponding to the hollow first pillar structure 62 may be located on a side of the first electrode layer 14 away from the CMOS measurement circuit system 1, and when there is no dielectric layer covering on the first electrode layer 14, the first reinforcing structure 162 is located on the first electrode layer 14 and is disposed in contact with the first electrode layer 14, and at this time, the first reinforcing structure 162 corresponding to the hollow first pillar structure 62 may form a hollow structure in the hollow pillar structure or form a solid structure. When a dielectric layer is covered on the first electrode layer 14, for example, when the second dielectric layer 15 is covered on the first electrode layer 14 in fig. 26, the first reinforcing structure 162 corresponding to the hollow first pillar structure 62 may be located above the second dielectric layer 15 and disposed in contact with the second dielectric layer 15 as shown in fig. 26, at this time, the first reinforcing structure 162 corresponding to the hollow first pillar structure 62 may form a hollow structure in the hollow pillar structure as shown in fig. 26, and the first reinforcing structure 162 may also form a solid structure in the hollow pillar structure, that is, the first reinforcing structure 162 may also fill an inner space surrounded by the second dielectric layer 15. Alternatively, as shown in fig. 27, the first reinforcing structure 162 may be disposed above the first electrode layer 14, and the first reinforcing structure 162 is disposed in contact with the first electrode layer 14, that is, the first reinforcing structure 162 is located between the first electrode layer 14 and the second dielectric layer 15, where the first reinforcing structure 162 forms a hollow structure in the hollow columnar structure.

Fig. 28 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in the embodiment of the present disclosure. Fig. 28 also only exemplarily shows the first pillar structure 61 and a part of the beam structure 11, and does not show the structure above the beam structure 11, as shown in fig. 28, it may also be arranged that the first reinforcement structure 162 corresponding to the hollow first pillar structure 62 is located on a side of the first electrode layer 14 adjacent to the CMOS measurement circuit system 1, and when a dielectric layer is disposed below the first electrode layer 14, for example, the first dielectric layer 13, the first reinforcement structure 162 corresponding to the hollow first pillar structure 62 may be located between the first electrode layer 14 and the first dielectric layer 13, and the first reinforcement structure 162 is disposed in contact with the first electrode layer 14.

With reference to fig. 26, 27 and 28, whether the first reinforcing structure 162 is located on the side of the first electrode layer 14 away from the CMOS measurement circuit system 1 or the first reinforcing structure 162 is located on the side of the first electrode layer 14 close to the CMOS measurement circuit system 1, the first reinforcing structure 162 covers the connection position of the first columnar structure 61 and the beam structure 11, which is equivalent to adding a negative weight at the connection position of the first columnar structure 61 and the beam structure 11, so that the connection stability between the first columnar structure 61 and the beam structure 11 is enhanced by the first reinforcing structure 162. In addition, the first reinforcing structure 162 also covers at least a part of the connection position of the first columnar structure 61 and the supporting base 42, which is equivalent to that a negative weight is added at the connection position of the first columnar structure 61 and the supporting base 42, so that the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 is utilized to enhance the connection stability between the first columnar structure 6 and the supporting base 42, further the electrical connection characteristic of the whole infrared detector is optimized, and the infrared detection performance of the infrared detector is optimized. Illustratively, the material of the first reinforcing structure 162 corresponding to the hollow first pillar-shaped structure 62 may be at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy or nickel-silicon alloy, the first reinforcing structure 162 corresponding to the hollow first pillar-shaped structure 62 according to the above embodiment may be a metal structure or a non-metal structure, which is not particularly limited in the embodiment of the present disclosure, and it is sufficient to ensure that the arrangement of the first reinforcing structure 162 corresponding to the hollow first pillar-shaped structure 62 does not affect the electrical connection relationship in the infrared detector.

Alternatively, in conjunction with fig. 2 and 7, it may be provided that the second columnar structure 62 includes at least one layer of hollow columnar structures, fig. 2 and 7 exemplarily provide that the second columnar structure 62 includes one layer of hollow columnar structures, in which at least an electrode layer is provided, in which case at least the second electrode layer 140 is provided in the second columnar structure 62 for the case where the beam structure 11 shown in fig. 2 and 7 is located on the side of the absorber plate 10 close to the CMOS measurement circuitry 1, and in which case at least the first electrode layer 14 is provided in the second columnar structure 62 for the case similar to the case where the beam structure 11 shown in fig. 5 is located on the side of the absorber plate 10 away from the CMOS measurement circuitry 1. Fig. 2 and fig. 7 exemplarily set up that the second electrode layer 140 and the dielectric layers respectively located at two sides of the second electrode layer 140 are disposed in the hollow columnar structure constituting the second columnar structure 62, and the dielectric layers at two sides achieve effective protection of the second electrode layer 140, prevent the second electrode layer 140 from being oxidized or corroded, and optimize the electrical transmission characteristics of the infrared detector. Illustratively, the dielectric layer located below the second electrode layer 140 in the second pillar structure 62 may be, for example, the third dielectric layer 130 in the absorber plate 10, the dielectric layer located above the second electrode layer 14 may be, for example, the fourth dielectric layer 150 in the absorber plate 10, and the dielectric layers on both sides of the second electrode layer 140 may also be separately fabricated film layers. In addition, the second columnar structure 62 may also be disposed, and no dielectric layer is disposed above and/or below the second electrode layer 140, that is, only a dielectric layer is disposed below the second electrode layer 140 in the hollow columnar structure, or only a dielectric layer is disposed above the second electrode layer 140, or only the second electrode layer 140 is disposed in the hollow columnar structure, and no dielectric layer is wrapped outside the second electrode layer 140.

Alternatively, the infrared detector may further include a second reinforcing structure, which is provided corresponding to the position of the second columnar structure 62, when the beam structure 11 is located on the side of the absorption plate 10 adjacent to the CMOS measurement circuit system 1, and is used for reinforcing the connection stability between the second columnar structure 62 and the absorption plate 10, and when the beam structure 11 is located on the side of the absorption plate 10 away from the CMOS measurement circuit system 1, like fig. 5, the second reinforcing structure is used for reinforcing the connection stability between the second columnar structure 62 and the absorption plate 10 and between the second columnar structure 62 and the beam structure 11, similar to the arrangement manner of the first reinforcing structure 162 corresponding to the first columnar structure 61 in the structures shown in fig. 26, 27 and 28.

Alternatively, the second reinforcing structure corresponding to the hollow second columnar structure 62 may be located on a side of the electrode layer away from the CMOS measurement circuitry 1; alternatively, the second reinforcing structure corresponding to the hollow second pillar structure 62 may be located on the side of the electrode layer adjacent to the CMOS measurement circuitry. In analogy to the arrangement of the first reinforcing structure 161 corresponding to the first columnar structure 61 in the structure shown in fig. 26, when the beam structure 11 is located on the side of the absorption plate 10 close to the CMOS measurement circuit system 1, the second reinforcing structure corresponding to the hollow second columnar structure 62 may be located on the side of the second electrode layer 140 away from the CMOS measurement circuit system 1, and when there is no dielectric layer covering on the second electrode layer 140, the second reinforcing structure corresponding to the hollow second columnar structure 62 is located on the second electrode layer 140 and is in contact with the second electrode layer 140, and at this time, the second reinforcing structure corresponding to the hollow second columnar structure 62 may form a hollow structure or form a solid structure in the hollow columnar structure. When a dielectric layer is covered on the second electrode layer 140, for example, when the fourth dielectric layer 150 is covered on the second electrode layer 140 in fig. 2, the second reinforcing structure corresponding to the hollow second column structure 62 may be disposed above the fourth dielectric layer 150 and in contact with the fourth dielectric layer 150 in a manner similar to the arrangement of the first reinforcing structure 161 shown in fig. 26, at this time, the second reinforcing structure corresponding to the hollow second column structure 62 may form a hollow structure in the hollow column structure similar to that shown in fig. 26, and the second reinforcing structure corresponding to the hollow second column structure 62 may also form a solid structure in the hollow column structure, that is, the second reinforcing structure corresponding to the hollow second column structure 62 may also fill the inner space surrounded by the fourth dielectric layer 150.

Alternatively, in analogy with the arrangement of the first reinforcing structures 161 corresponding to the first columnar structures 61 in the structure shown in fig. 27, the second reinforcing structures corresponding to the hollow second columnar structures 62 may be arranged above the second electrode layer 140 and the second reinforcing structures corresponding to the hollow second columnar structures 62 may be arranged in contact with the second electrode layer 140, that is, the second reinforcing structures corresponding to the hollow second columnar structures 62 are located between the second electrode layer 140 and the fourth dielectric layer 150, and at this time, the second reinforcing structures corresponding to the hollow second columnar structures 62 form hollow structures in the hollow columnar structures.

Alternatively, similar to the arrangement of the first reinforcing structure 161 corresponding to the first columnar structure 61 in the structure shown in fig. 28, when the second reinforcing structure corresponding to the hollow second columnar structure 62 is located on the side of the second electrode layer 140 adjacent to the CMOS measurement circuit system 1, and a dielectric layer is disposed below the second electrode layer 140, for example, the third dielectric layer 130, the second reinforcing structure corresponding to the hollow second columnar structure 62 may be located between the second electrode layer 140 and the third dielectric layer 130, and the second reinforcing structure corresponding to the hollow second columnar structure 62 may be disposed in contact with the second electrode layer 140. In addition, when the beam structure 11 like that shown in fig. 5 is located on the side of the absorber plate 10 away from the CMOS measurement circuitry 1, and the first columnar structure 61 or the second columnar structure 62 is a hollow columnar structure, a reinforcing structure like that shown in fig. 26 to 28 may also be provided for each columnar structure.

Comparing fig. 26, 27 and 28, whether the second reinforcing structure corresponding to the hollow second columnar structure 62 is located on the side of the second electrode layer 140 away from the CMOS measurement circuit system 1 or the second reinforcing structure corresponding to the hollow second columnar structure 62 is located on the side of the second electrode layer 140 close to the CMOS measurement circuit system 1, the second reinforcing structure corresponding to the hollow second columnar structure 62 covers the connection position of the second columnar structure 62 and the absorbing plate 10, which corresponds to the addition of the negative weight at the connection position of the second columnar structure 62 and the absorbing plate 10, and the connection stability between the second columnar structure 62 and the absorbing plate 10 is enhanced by the second reinforcing structure corresponding to the hollow second columnar structure 62.

Illustratively, the material of the first reinforcing structure 162 constituting the corresponding hollow first columnar structure 61 may include at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon oxide, silicon oxynitride, silicon oxycarbide, titanium oxide, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, or nickel-silicon alloy, the material of the second reinforcing structure constituting the corresponding hollow second columnar structure 62 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon oxide oxynitride, silicon oxycarbide, titanium oxide, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, or nickel-silicon alloy, the first reinforcing structure 162 corresponding to the hollow first columnar structure 61 and the second reinforcing structure corresponding to the hollow second columnar structure 62 in the above embodiments may be of a metal structure or a non-metal structure, which is not specifically limited in this embodiment of the present disclosure, and it is sufficient to ensure that the arrangement of the first reinforcing structure 162 corresponding to the hollow first columnar structure 61 and the second reinforcing structure corresponding to the hollow second columnar structure 62 does not affect the electrical connection relationship in the infrared detector.

Optionally, in conjunction with fig. 1 to 28, at least one patterned metal interconnection layer may be disposed between the reflective layer 4 and the suspended microbridge structure 40, the patterned metal interconnection layer is located above or below the hermetic release barrier layer 3 and is electrically insulated from the reflective layer 4, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector. Specifically, a Bragg reflector (Bragg reflector) is an optical device for enhancing reflection of light with different wavelengths by utilizing constructive interference of reflected light with different interfaces, and is composed of a plurality of 1/4 wavelength reflectors so as to realize efficient reflection of incident light with multiple wavelengths, in the embodiment of the disclosure, at least one patterned metal interconnection layer is arranged between the reflection layer 4 and the suspended micro-bridge structure 40, at least one patterned metal interconnection layer, the reflection layer 4 and the absorption plate 10 form a structure similar to the Bragg reflector, the arrangement of at least one patterned metal interconnection layer is equivalent to changing the thickness of an integral resonant cavity medium formed by the reflection layer 4 and a heat sensitive medium layer in the absorption plate 10, so that infrared detector pixels can form a plurality of resonant cavities with different medium thicknesses, and the infrared detector pixels can select light with different wavelengths for enhanced reflection adjustment, and then the resonance mode of the infrared detector is adjusted by utilizing at least one patterned metal interconnection layer, so that the infrared absorption rate of the infrared detector is improved, the infrared absorption spectrum band of the infrared detector is widened, and the infrared absorption spectrum band of the infrared detector is increased.

Illustratively, at least one patterned metal interconnect layer may be disposed on a side of the hermetic release barrier 3 away from the CMOS measurement circuitry 1 and/or at least one patterned metal interconnect layer may be disposed on a side of the hermetic release barrier 3 adjacent to the CMOS measurement circuitry 1. Illustratively, the patterned metal interconnection layer may include a plurality of metal repeating units arranged in an array, each metal repeating unit may include at least one of an L-shaped patterned structure, a circular structure, a sector-shaped structure, an elliptical structure, a circular ring structure, an open ring structure, or a polygonal structure arranged at two opposite corners, or the patterned metal interconnection layer may include a plurality of patterned hollow structures arranged in an array, and the patterned hollow structures may include at least one of a circular hollow structure, an open ring-shaped hollow structure, or a polygonal hollow structure.

Fig. 29 is a schematic perspective structure diagram of another infrared detector pixel provided in an embodiment of the present disclosure, and fig. 30 is a schematic top-view structure diagram of the structure shown in fig. 29. Fig. 29 shows only the first columnar structure 61 and the beam structure 11, and does not show the structure above the beam structure 11, and in conjunction with fig. 29 and fig. 30, it can be arranged that the beam structure 11 includes a thermally symmetric structure, that is, two parallel beam structures meeting at the same node in the beam path from the middle portion 730 of the absorber plate 10 or the beam structure 11 to the corresponding first columnar structure 61 are the first half-bridge structure 710 and the second half-bridge structure 720, respectively, and the first half-bridge structure 710 and the second half-bridge structure 720 constitute the thermally symmetric structure 70.

The heat of the infrared detector is conducted from the absorber plate 10 or the middle portion 730 of the beam structure 11 to the two first pillar structures 61 connecting the same beam structure 11, the first half-bridge structure 710 may comprise a support layer, an electrode layer and a passivation layer, for example, a first dielectric layer 13, a first electrode layer 14 and a second dielectric layer 15, the second half-bridge structure 720 may comprise a first dielectric layer 13 and/or a second dielectric layer 15, i.e., the thickness of the first half-bridge structure 710 is greater than that of the second half-bridge structure 720, and in the case that the lengths of the first half-bridge structure 710 and the second half-bridge structure 720 are equal, the heat conduction speed on the first half-bridge structure 710 is faster than on the second half-bridge structure 720 due to its greater thickness. The embodiment of the disclosure asymmetrically designs the lengths of the first half-bridge structure 710 and the second half-bridge structure 720, that is, the length of the first half-bridge structure 710 is longer than the length of the second half-bridge structure 720, so as to slow down the heat conduction speed of the first half-bridge structure 710 with a fast heat conduction speed caused by thickness factors, further achieve that the heat conduction unbalanced difference between the first half-bridge structure 710 and the second half-bridge structure 720 in the thermally symmetric structure 70 is less than or equal to 20%, that is, the heat conduction speed difference between the first half-bridge structure 710 and the second half-bridge structure 720 in the thermally symmetric structure 70 is less than or equal to 20%, preferably, achieve that the first half-bridge structure 710 and the second half-bridge structure 720 in the thermally symmetric structure 70 are the same, further reduce the total heat conduction of the infrared detector, further improve the infrared detection performance of the infrared detector, and reduce the stress and deformation of the infrared detector under the same force, the stability and the shock resistance of the infrared detector are improved, and the mechanical strength of the infrared detector is enhanced.

Specifically, with reference to fig. 29 and 30, the parallel beam structure a and the parallel beam structure B meet at the same node a, the parallel beam structure C and the parallel beam structure D meet at the node B and the node C, and the parallel beam structure e and the parallel beam structure f meet at the same node D. In addition, the length of the first half-bridge structure 710 in the thermally symmetric structure 70 is greater than the length of the second half-bridge structure 720, so the parallel beam structure a is the first half-bridge structure 710, the parallel beam structure b is the second half-bridge structure 720, and the two structures form a thermally symmetric structure 70, the parallel beam structure c is the first half-bridge structure 710, the parallel beam structure d is the second half-bridge structure 720, and the two structures form a thermally symmetric structure 70, the parallel beam structure e is the first half-bridge structure 710, and the parallel beam structure f is the second half-bridge structure 720, and the two structures form a thermally symmetric structure 70.

Optionally, with reference to fig. 2, 5, 6, 7, 8, 12, and 15, when the suspended microbridge structure 40 includes the first dielectric layer 13 and the second dielectric layer 15, the first dielectric layer 13 and/or the second dielectric layer 15 between the beam structures 11 disposed oppositely may be disposed to form a patterned film structure, where the beam structures 11 disposed oppositely are the beam structures 11 located at the left and right sides in fig. 1 or the beam structures 11 located at the upper and lower sides in fig. 1, and the patterned film structure includes a plurality of stripe patterns, and the stripe patterns in the patterned film structure are symmetrically disposed with respect to the beam structures 11.

Taking the first dielectric layer 13 as an example, fig. 31 is a schematic top view structure diagram of the first dielectric layer according to an embodiment of the disclosure. With reference to fig. 1 to 31, the first dielectric layer 13 between the oppositely disposed beam structures 11 may be disposed to form a patterned film structure 90 as shown in fig. 31, where the patterned film structure 90 is located at a1 area in fig. 2, the patterned film structure 90 includes a plurality of stripe patterns 91, and the stripe patterns 91 in the patterned film structure 90 are symmetrically disposed with respect to the beam structures 11, that is, the stripe patterns 91 in the patterned film structure 90 are symmetrically disposed with respect to the beam structures 11 at the left and right sides in fig. 31. Therefore, the patterned film structure 90 is formed by arranging the first dielectric layer 13 and/or the second dielectric layer 15 between the beam structures 11 which are arranged oppositely, the patterned film structure 90 comprises a plurality of strip-shaped patterns 91, and the strip-shaped patterns 91 in the patterned film structure 90 are symmetrically arranged relative to the beam structures 11, so that the mechanical stability of the patterned film structure 90 is effectively improved, and the mechanical stability of the whole infrared detector is further improved.

It should be noted that the pattern in the patterned film structure 90 according to the embodiment of the disclosure is not limited to the pattern form shown in fig. 31, for example, the patterned film structure 90 may further include more stripe patterns to form a grid structure, and the like, and the embodiment of the disclosure does not limit the specific pattern in the patterned film structure 90, so as to ensure that the stripe patterns in the patterned film structure 90 are symmetrical with respect to the beam structure 11, and the patterns in the patterned film structure 90 formed by the first dielectric layer 13 and the second dielectric layer 15 may be the same or different.

Alternatively, the infrared detector may be configured based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm or 350nm CMOS process, which characterizes process nodes of the integrated circuit, i.e., features during the processing of the integrated circuit.

Alternatively, the metal wiring material constituting the metal interconnection layer in the infrared detector may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt, and for example, the material constituting the reflective layer 4 may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt. In addition, the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are both prepared by using a CMOS process, and the CMOS infrared sensing structure 2 is directly prepared on the CMOS measurement circuit system 1, so that the radial side lengths of the first columnar structure 61 and the second columnar structure 62 can be greater than or equal to 0.5um and less than or equal to 3um, the width of the beam structure 11, that is, the width of a single line in the beam structure 11 is less than or equal to 0.3um, and the height of the resonant cavity is less than or equal to 2.5 um.

It should be noted that, the embodiment of the present disclosure does not provide schematic diagrams of all structures of the infrared detector belonging to the protection scope of the embodiment of the present disclosure, and the protection scope of the embodiment of the present disclosure is not limited thereto, and any combination of different features disclosed in the embodiment of the present disclosure may be, for example, whether there is a first reinforcing structure and/or a second reinforcing structure in the infrared detector, and all combinations of the first pillar structure and the second pillar structure of different structures also belong to the protection scope of the embodiment of the present disclosure.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An infrared detector with a microbridge structure, comprising:

2. The microbridge structure infrared detector of claim 1, wherein the CMOS infrared sensing structure is fabricated on top of or at the same level as a metal interconnect layer of the CMOS measurement circuitry.

3. The microbridge structure infrared detector of claim 1, wherein the reflective layer is configured to reflect an infrared signal and form the resonant cavity with the thermal sensitive medium layer, the reflective layer includes at least one metal interconnection layer, the first pillar structure connects the corresponding beam structure and the CMOS measurement circuitry through the metal interconnection process and the via process, and the second pillar structure connects the corresponding absorber plate and the corresponding beam structure through the metal interconnection process and the via process;

4. The microbridge structure infrared detector of claim 3, wherein at least one patterned metal interconnection layer is disposed between the reflective layer and the suspended microbridge structure, the patterned metal interconnection layer is located above or below the hermetic release barrier layer and is electrically insulated from the reflective layer, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector;

the suspended microbridge structure comprises a third dielectric layer and a fourth dielectric layer, the infrared detector further comprises a metamaterial structure and/or a polarization structure, the metamaterial structure or the polarization structure is at least one metal interconnection layer, close to one side of the CMOS measuring circuit system, of the third dielectric layer, or at least one metal interconnection layer, far away from one side of the CMOS measuring circuit system, of the fourth dielectric layer, or at least one metal interconnection layer, electrically insulated from the second electrode layer, of the middle of the third dielectric layer and the fourth dielectric layer, or the second electrode layer serves as a metamaterial structure layer or a polarization structure layer.

5. The microbridge structure infrared detector of claim 3, wherein the first columnar structure comprises at least one layer of hollow columnar structure, and at least the first electrode layer is disposed in the hollow columnar structure;

6. The microbridge structure infrared detector of claim 3, wherein the second columnar structure comprises at least one layer of hollow columnar structure, and at least an electrode layer is arranged in the hollow columnar structure;

7. The microbridge structure infrared detector of claim 1, wherein the first columnar structure comprises at least one layer of solid columnar structures, the solid columnar structures comprising solid structures;

8. The microbridge structure infrared detector of claim 1, wherein the second columnar structure comprises at least one layer of solid columnar structures, the solid columnar structures comprising solid structures;

the side wall of the solid structure is in contact with the sacrificial layer between the corresponding beam structure and the corresponding absorption plate, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum; alternatively, the first and second electrodes may be,

the side wall of the solid structure and the surface of the solid structure close to the CMOS measuring circuit system are coated with at least one adhesion layer, the side wall of the second columnar structure, far away from the solid structure, of the adhesion layer on the outermost periphery is coated with a dielectric layer, the material forming the solid structure comprises at least one of tungsten, copper or aluminum, the material forming the adhesion layer comprises at least one of titanium, titanium nitride, tantalum or tantalum nitride, and the material forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, amorphous carbon, aluminum oxide, titanium oxide, vanadium titanium oxide, vanadium oxide, graphene, yttrium barium oxide, copper or platinum;

9. The microbridge structure infrared detector of claim 3, wherein the beam structure comprises a thermally symmetric structure;

the suspended microbridge structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer and/or the second dielectric layer between the beam structures which are arranged oppositely form a patterned film layer structure, the patterned film layer structure comprises a plurality of strip-shaped patterns, and the strip-shaped patterns are symmetrically arranged relative to the beam structures;

10. The microbridge structure infrared detector of claim 1, wherein the hermetic release barrier is located at an interface between the CMOS measurement circuitry and the CMOS infrared sensing structure and/or in the CMOS infrared sensing structure;

11. The infrared detector of claim 10, wherein the hermetic release isolation layer is located on a side of the reflection layer away from the CMOS measurement circuit system, at least one dielectric layer is disposed between the reflection layer and the hermetic release isolation layer, and a material constituting the dielectric layer includes at least one of germanium, silicon, or silicon germanium.

12. The microbridge structure infrared detector of claim 1, wherein the infrared detector is based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm, or 350nm CMOS process;