CN113447141B

CN113447141B - Infrared microbridge detector based on CMOS (complementary Metal oxide semiconductor) process

Info

Publication number: CN113447141B
Application number: CN202110711256.3A
Authority: CN
Inventors: 翟光杰; 武佩; 潘辉; 翟光强
Original assignee: Beijing North Gaoye Technology Co ltd
Current assignee: Beijing North Gaoye Technology Co ltd
Priority date: 2021-06-25
Filing date: 2021-06-25
Publication date: 2022-12-02
Anticipated expiration: 2041-06-25
Also published as: CN113447141A

Abstract

The utility model relates to an infrared microbridge detector based on CMOS technology, CMOS measurement circuitry and CMOS infrared sensing structure in the infrared microbridge detector are all prepared by CMOS technology, CMOS manufacturing technology includes metal interconnection technology, through-hole technology, IMD technology and RDL technology, the columnar structure in the CMOS infrared sensing structure includes at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, the suspended microbridge structure includes an absorption plate and a beam structure, at least one hole-shaped structure is formed on the absorption plate, the hole-shaped structure at least penetrates through the medium layer in the absorption plate; and/or at least one hole-like structure is formed on the beam structure. Through the technical scheme, the problems of low performance, low pixel scale, low yield, poor consistency and the like of the infrared micro-bridge detector in the traditional MEMS process are solved, the planarization degree of the absorption plate is optimized, the thermal conductivity of the beam structure is reduced, and the performance of the infrared micro-bridge detector is optimized.

Description

Infrared microbridge detector based on CMOS (complementary Metal oxide semiconductor) process

Technical Field

The present disclosure relates to the field of infrared detection technology, and in particular, to an infrared microbridge detector based on a CMOS process.

Background

The fields of monitoring markets, vehicle and auxiliary markets, home markets, intelligent manufacturing markets, mobile phone applications and the like have strong demands on uncooled high-performance chips, certain requirements are provided for the performance of the chips, the performance consistency and the product price, the potential demands of more than one hundred million chips are expected every year, and the current process scheme and architecture cannot meet the market demands.

At present, an infrared microbridge detector adopts a mode of combining a measuring circuit and an infrared sensing structure, the measuring circuit is prepared by adopting a Complementary Metal-Oxide-Semiconductor (CMOS) process, and the infrared sensing structure is prepared by adopting a Micro-Electro-Mechanical System (MEMS) process, so that the following problems are caused:

(1) The infrared sensing structure is prepared by adopting an MEMS (micro-electromechanical systems) process, polyimide is used as a sacrificial layer, and the infrared sensing structure is incompatible with a CMOS (complementary metal oxide semiconductor) process.

(2) Polyimide is used as a sacrificial layer, so that the problem that the vacuum degree of a detector chip is influenced due to incomplete release exists, the growth temperature of a subsequent film is limited, and the selection of materials is not facilitated.

(3) Polyimide can cause the height of the resonant cavity to be inconsistent, and the working dominant wavelength is difficult to guarantee.

(4) The control of the MEMS process is far worse than that of the CMOS process, and the performance consistency and the detection performance of the chip are restricted.

(5) MEMS has low productivity, low yield and high cost, and can not realize large-scale batch production.

(6) The existing process capability of the MEMS is not enough to support the preparation of a detector with higher performance, and the MEMS has smaller line width and thinner film thickness, thereby being not beneficial to realizing the miniaturization of a chip.

Disclosure of Invention

In order to solve the above technical problem or at least partially solve the above technical problem, the present disclosure provides an infrared microbridge detector based on a CMOS process, which solves the problems of low performance, low pixel scale, low yield, poor uniformity, etc. of the infrared microbridge detector in the conventional MEMS process, optimizes the planarization degree of the absorption plate, reduces the thermal conductance of the beam structure, and optimizes the performance of the infrared microbridge detector.

The present disclosure provides an infrared microbridge detector based on a CMOS process, including:

the CMOS infrared sensing structure comprises a CMOS measuring circuit system and a CMOS infrared sensing structure, wherein the CMOS measuring circuit system and the CMOS infrared sensing structure are both prepared by using a CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system;

the CMOS measuring circuit system comprises at least one layer of closed release isolation layer above the CMOS measuring circuit system, and the closed release isolation layer is used for protecting the CMOS measuring circuit system from being influenced by a process in the release etching process for manufacturing the CMOS infrared sensing structure;

the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (remote description language) process, wherein the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the metal interconnection layers at least comprise a reflecting layer and an electrode layer, and the dielectric layers at least comprise a sacrificial layer and a heat-sensitive dielectric layer; the thermal sensitive dielectric layer is used for converting temperature change corresponding to infrared radiation absorbed by the thermal sensitive dielectric layer into resistance change, and further converting an infrared target signal into a signal capable of realizing electric reading through the CMOS measuring circuit system;

the CMOS infrared sensing structure comprises a resonant cavity formed by the reflecting layer and the heat sensitive medium layer, a suspended micro-bridge structure for controlling heat transfer and a columnar structure with electric connection and support functions, wherein the columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, and the suspended micro-bridge structure is electrically connected with the CMOS measuring circuit system through the columnar structure and a support base in the reflecting layer;

the suspended micro-bridge structure comprises an absorption plate and a beam structure, wherein at least one hole-shaped structure is formed on the absorption plate, and the hole-shaped structure at least penetrates through a medium layer in the absorption plate; and/or at least one hole-shaped structure is formed on the beam structure;

the CMOS measuring circuit system is used for measuring and processing an array resistance value formed by one or more CMOS infrared sensing structures and converting an infrared signal into an image electric signal; the CMOS measuring circuit system comprises a bias voltage generating circuit, a column-level analog front-end circuit and a row-level circuit, wherein the input end of the bias voltage generating circuit is connected with the output end of the row-level circuit, the input end of the column-level analog front-end circuit is connected with the output end of the bias voltage generating circuit, the row-level circuit comprises row-level mirror image pixels and row selection switches, and the column-level analog front-end circuit comprises blind pixels; the row-level circuit is distributed in each pixel, selects a signal to be processed according to a row strobe signal of the time sequence generating circuit, and outputs a current signal to the column-level analog front-end circuit under the action of the bias voltage generating circuit so as to perform current-voltage conversion and output;

the column-level analog front-end circuit obtains two paths of currents according to the first bias voltage and the second bias voltage, performs transimpedance amplification on the difference between the two paths of generated currents and outputs the amplified current as an output voltage.

Optionally, the CMOS infrared sensing structure is prepared on an upper layer or a same layer of a metal interconnection layer of the CMOS measurement circuitry.

Optionally, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the material forming the sacrificial layer is silicon oxide, and the sacrificial layer is etched by a post-CMOS process.

Optionally, the absorption plate is configured to absorb the infrared target signal and convert the infrared target signal into an electrical signal, the beam structure and the pillar structure are configured to transmit the electrical signal and to support and connect the absorption plate, the reflection layer is configured to reflect the infrared signal and form the resonant cavity with the thermal sensitive dielectric layer, the reflection layer includes at least one metal interconnection layer, and the pillar structure connects the beam structure and the CMOS measurement circuitry by using the metal interconnection process and the via process;

the beam structure comprises the electrode layer, or the beam structure comprises a first dielectric layer and the electrode layer, or the beam structure comprises the electrode layer and a second dielectric layer, or the beam structure comprises the electrode layer and the heat sensitive dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer and the heat sensitive dielectric layer, or the beam structure comprises the electrode layer, the heat sensitive dielectric layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer, the heat sensitive dielectric layer and a second dielectric layer, the absorption plate comprises the electrode layer and the heat sensitive dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer and the heat sensitive dielectric layer, or the absorption plate comprises the electrode layer, the heat sensitive dielectric layer and the second dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer, the heat sensitive dielectric layer and the second dielectric layer; wherein the material for forming the first dielectric layer comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, the material for forming the second dielectric layer comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, the material for forming the heat sensitive dielectric layer comprises at least one of materials with the resistance temperature coefficient larger than a set value, wherein the materials are prepared from titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium-silicon, amorphous germanium-oxygen-silicon, germanium-silicon, germanium-oxygen-silicon, graphene, a barium strontium titanate film, copper or platinum; alternatively, the first and second electrodes may be,

the beam structure comprises a first dielectric layer, the electrode layer and a second dielectric layer, the absorption plate comprises the first dielectric layer and the electrode layer, or the absorption plate comprises the electrode layer and the second dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer and the second dielectric layer, or the absorption plate comprises a support layer, a first dielectric layer, the electrode layer and a second dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer, the second dielectric layer and a passivation layer, or the absorption plate comprises the support layer, the first dielectric layer, the electrode layer, the second dielectric layer and the passivation layer; the material for forming the first dielectric layer comprises at least one of materials with the resistance temperature coefficient larger than a set value, and the material for forming the second dielectric layer comprises at least one of materials with the resistance temperature coefficient larger than a set value, wherein the materials are prepared from amorphous silicon, amorphous germanium-silicon or amorphous carbon;

the electrode layer is made of at least one of titanium, titanium nitride, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum or copper.

Optionally, the suspended microbridge structure includes a first dielectric layer and a second dielectric layer, the infrared microbridge detector further includes a metamaterial structure and/or a polarization structure, the metamaterial structure or the polarization structure is at least one metal interconnection layer on one side of the first dielectric layer, which is close to the CMOS measurement circuit system, or at least one metal interconnection layer on one side of the second dielectric layer, which is far away from the CMOS measurement circuit system, or at least one metal interconnection layer which is between the first dielectric layer and the second dielectric layer and is electrically insulated from the electrode layer, or the electrode layer is used as a metamaterial structure layer or a polarization structure layer.

Optionally, the columnar structure comprises at least one layer of solid columnar structure, and the solid columnar structure comprises a solid structure;

the side wall of the solid structure is in contact with the sacrificial layer, and the material for forming the solid structure comprises at least one of tungsten, copper or aluminum; alternatively, the first and second liquid crystal display panels may be,

the side wall of the solid structure is coated with at least one dielectric layer, the solid structure is arranged in contact with the dielectric layer, the material for forming the solid structure comprises at least one of tungsten, copper or aluminum, and the material for forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon, germanium silicon oxide, graphene, copper or platinum; alternatively, the first and second electrodes may be,

solid construction's lateral wall and solid construction closes on CMOS measurement circuitry's surface cladding has at least one deck adhesion layer, in the columnar structure outermost periphery the adhesion layer is kept away from solid construction's lateral wall cladding has the dielectric layer, constitutes solid construction's material includes at least one among tungsten, copper or the aluminium, constitutes the material of adhesion layer includes at least one among titanium, titanium nitride, tantalum or the tantalum nitride, constitutes the material of dielectric layer includes at least one among silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminium oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium silicon, amorphous germanium oxygen silicon, germanium, silicon germanium, germanium oxygen silicon, graphene, copper or platinum.

Optionally, the infrared microbridge detector further includes a reinforcing structure, the reinforcing structure is disposed at a position corresponding to the position of the columnar structure, the reinforcing structure is configured to enhance connection stability between the columnar structure and the beam structure, and the reinforcing structure includes a weighted block structure;

the weighting block structure is positioned on one side of the beam structure far away from the CMOS measuring circuit system and is in contact with the beam structure; alternatively, the first and second electrodes may be,

the beam structure is provided with a through hole corresponding to the position of the columnar structure, at least part of the columnar structure is exposed out of the through hole, the weighting block structure comprises a first part and a second part, the first part is filled in the through hole, the second part is located outside the through hole, and the orthographic projection of the second part covers the orthographic projection of the first part.

Optionally, the columnar structure includes at least one layer of hollow columnar structure, and the electrode layer is at least disposed in the hollow columnar structure.

Optionally, the infrared microbridge detector further comprises a reinforcing structure, the reinforcing structure is arranged corresponding to the position of the columnar structure, and the reinforcing structure is used for enhancing the connection stability between the columnar structure and the suspended microbridge structure and between the columnar structure and the reflecting layer;

the reinforcing structure is positioned on one side of the electrode layer, which is far away from the CMOS measuring circuit system; or, the reinforcing structure is positioned on one side of the electrode layer close to the CMOS measuring circuit system.

Optionally, the hermetic release barrier is located at an interface between the CMOS measurement circuitry and the CMOS infrared sensing structure and/or in the CMOS infrared sensing structure;

the closed release isolation layer at least comprises a dielectric layer, and the dielectric material forming the closed release isolation layer comprises at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium-silicon, germanium, silicon-germanium alloy, amorphous carbon or aluminum oxide.

Optionally, at least one patterned metal interconnection layer is disposed between the reflective layer and the suspended microbridge structure, the patterned metal interconnection layer is located above or below the hermetic release isolation layer and is electrically insulated from the reflective layer, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared microbridge detector.

Optionally, the infrared microbridge detector is based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm, or 350nm CMOS process;

the metal connecting wire material of the metal interconnection layer of the infrared microbridge detector comprises at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium or cobalt.

Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:

the CMOS process is utilized to realize the integrated preparation of the CMOS measuring circuit system and the CMOS infrared sensing structure on the CMOS production line, compared with the MEMS process, the CMOS process has no process compatibility problem, the technical difficulty of the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS process production line process to prepare the infrared microbridge detector, and the risk caused by the problems of transportation and the like is reduced; the infrared microbridge detector takes silicon oxide as a sacrificial layer, the silicon oxide is completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that polyimide of the sacrificial layer is not released cleanly to influence the vacuum degree of a detector chip, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared microbridge detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared microbridge detector; the infrared microbridge detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, and the infrared microbridge detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, so that the infrared microbridge detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared microbridge detector based on the CMOS process can enable the pixel size of the detector to be smaller, realize smaller chip area under the same array pixel and be more beneficial to realizing chip miniaturization; the infrared microbridge detector based on the CMOS process has the advantages of mature process production line, higher process control precision, better meeting of design requirements, better product consistency, more contribution to circuit piece adjustment performance and more contribution to industrialized batch production. In addition, the hole-shaped structure on the absorption plate is favorable for accelerating the release rate of the sacrificial layer and releasing the internal stress of the absorption plate, the planarization degree of the absorption plate is optimized, the hole-shaped structure on the beam structure is favorable for further reducing the thermal conductance of the beam structure, and the infrared detection sensitivity of the infrared micro-bridge detector is improved.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the disclosure.

In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.

Fig. 1 is a schematic perspective structure diagram of an infrared microbridge detector pixel provided in an embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional structure diagram of an infrared microbridge detector pixel provided in an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 4 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

fig. 5 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 6 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 7 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 8 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

fig. 9 is a schematic structural diagram of a CMOS measurement circuitry provided in an embodiment of the present disclosure;

FIG. 10 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 11 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 12 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 13 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiments of the present disclosure;

FIG. 14 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiments of the present disclosure;

FIG. 15 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiments of the present disclosure;

FIG. 16 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiments of the present disclosure;

fig. 17 is a schematic top view of a polarization structure provided in an embodiment of the present disclosure;

FIG. 18 is a schematic diagram illustrating a top view of another polarization structure provided in an embodiment of the present disclosure;

FIG. 19 is a schematic diagram illustrating a top view of another polarization structure provided in an embodiment of the present disclosure;

FIG. 20 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 21 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 22 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

fig. 23 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure;

FIG. 24 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiments of the present disclosure;

fig. 25 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure.

Detailed Description

In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.

Fig. 1 is a schematic perspective structure diagram of an infrared microbridge detector pixel provided in an embodiment of the present disclosure, and fig. 2 is a schematic cross-sectional structure diagram of an infrared microbridge detector pixel provided in an embodiment of the present disclosure. Referring to fig. 1 and 2, the infrared microbridge detector includes a plurality of infrared microbridge detector pixels arranged in an array, the CMOS process-based infrared microbridge detector includes a CMOS measurement circuit system 1 and a CMOS infrared sensing structure 2, both the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are manufactured by using a CMOS process, and the CMOS infrared sensing structure 2 is directly manufactured on the CMOS measurement circuit system 1.

Specifically, the CMOS infrared sensing structure 2 is used for converting an external infrared signal into an electric signal and transmitting the electric signal to the CMOS measuring circuit system 1, and the CMOS measuring circuit system 1 reflects temperature information of a corresponding infrared signal according to the received electric signal, so that the temperature detection function of the infrared microbridge detector is realized. The CMOS measuring circuit system 1 and the CMOS infrared sensing structure 2 are both prepared by using a CMOS process, and the CMOS infrared sensing structure 2 is directly prepared on the CMOS measuring circuit system 1, namely, the CMOS measuring circuit system 1 is prepared by using the CMOS process, and then the CMOS infrared sensing structure 2 is continuously prepared by using the CMOS process by using the CMOS production line and parameters of various processes compatible with the production line.

Therefore, the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are integrally prepared on the CMOS production line by utilizing the CMOS process, compared with the MEMS process, the CMOS process does not have the process compatibility problem, the technical difficulty of the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS production line process to prepare the infrared microbridge detector, and the risk caused by the problems of transportation and the like is reduced; the infrared microbridge detector takes silicon oxide as a sacrificial layer, the silicon oxide is completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that polyimide of the sacrificial layer is not released cleanly to influence the vacuum degree of a detector chip, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared microbridge detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared microbridge detector; the infrared microbridge detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, and the infrared microbridge detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, so that the infrared microbridge detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared microbridge detector based on the CMOS process can enable the pixel size of the detector to be smaller, realize smaller chip area under the same array pixel and be more beneficial to realizing chip miniaturization; the infrared microbridge detector based on the CMOS process has the advantages of mature process production line, higher process control precision, better meeting of design requirements, better product consistency, better contribution to circuit piece adjustment performance and industrial batch production.

Referring to fig. 1 and 2, the cmos infrared sensing structure 2 includes a resonant cavity formed by a reflective layer 4 and a heat sensitive dielectric layer, a suspended microbridge structure 40 controlling heat transfer, and a pillar structure 6 having an electrical connection and support function, the suspended microbridge structure 40 including an absorption plate 10 and a plurality of beam structures 11. Specifically, the CMOS infrared sensing structure 2 includes a reflection layer 4, a suspended micro-bridge structure 40 and a columnar structure 6 which are located on the CMOS measurement circuit system 1, the columnar structure 6 is located between the reflection layer 4 and the suspended micro-bridge structure 40, the reflection layer 4 includes a reflection plate 41 and a supporting base 42, and the suspended micro-bridge structure 40 is electrically connected with the CMOS measurement circuit system 1 through the columnar structure 6 and the supporting base 42.

Specifically, the columnar structure 6 is located between the reflective layer 4 and the suspended microbridge structure 40, and is used for supporting the suspended microbridge structure 40 after a sacrificial layer on the CMOS measurement circuit system 1 is released, the sacrificial layer is located between the reflective layer 4 and the suspended microbridge structure 40, the suspended microbridge structure 40 transmits an electrical signal converted from an infrared signal to the CMOS measurement circuit system 1 through the corresponding columnar structure 6 and the corresponding supporting base 42, the CMOS measurement circuit system 1 processes the electrical signal to reflect temperature information, and non-contact infrared temperature detection of the infrared microbridge detector is achieved. The CMOS infrared sensing structure 2 outputs positive electric signals and ground electric signals through different electrode structures, the positive electric signals and the ground electric signals are transmitted to a supporting base 42 electrically connected with the columnar structures 6 through different columnar structures 6, fig. 1 and 2 exemplarily show that the direction parallel to the CMOS measuring circuit system 1 is taken, the CMOS infrared sensing structure 2 includes two columnar structures 6, one of the columnar structures 6 can be set for transmitting positive electric signals, the other columnar structure 6 is set for transmitting ground electric signals, the CMOS infrared sensing structure 2 can also include four columnar structures 6, the four columnar structures 6 can be set as a group by two to respectively transmit positive electric signals and ground electric signals, the infrared microbridge detector includes a plurality of infrared microbridge detector pixels arranged in an array, the four columnar structures 6 can also select two of the columnar structures 6 to respectively transmit positive electric signals and ground electric signals, and the other two columnar structures 6 supply the adjacent infrared microbridge detector pixels for electric signal transmission. In addition, the reflection layer 4 includes a reflection plate 41 and a supporting base 42, a part of the reflection layer 4 is used as a dielectric medium electrically connected with the CMOS measurement circuit system 1 through the columnar structure 6, that is, the supporting base 42, the reflection plate 41 is used for reflecting infrared rays to the suspended microbridge structure 40, and the secondary absorption of the infrared rays is realized by matching with a resonant cavity formed between the reflection layer 4 and the suspended microbridge structure 40, so as to improve the infrared absorption rate of the infrared microbridge detector and optimize the infrared detection performance of the infrared microbridge detector.

The columnar structures 6 include at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, that is, the columnar structures 6 may include at least one layer of solid columnar structure, at least one layer of hollow columnar structure, or at least one layer of solid columnar structure and at least one layer of hollow columnar structure. Fig. 2 exemplarily sets up that columnar structure 6 includes a layer of hollow columnar structure, forms hollow structure at columnar structure 6 position promptly, and hollow columnar structure is favorable to reducing the thermal conductance of columnar structure 6, and then reduces the influence of the heat-conduction that columnar structure 6 produced to the signal of telecommunication that unsettled microbridge structure 40 generated, is favorable to promoting infrared microbridge detector pixel and the infrared detection performance of the infrared microbridge detector including this infrared microbridge detector pixel.

Fig. 3 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. With reference to fig. 1 and 3, fig. 3 exemplarily shows that the columnar structure 6 includes a solid columnar structure, i.e., a solid metal structure is formed at the position of the columnar structure 6, and the mechanical stability of the solid columnar structure is better, so that the supporting connection stability between the columnar structure 6 and the suspended micro-bridge structure 40 is improved, and further, the structural stability of the infrared sensor pixel and the infrared micro-bridge detector including the infrared micro-bridge detector pixel is improved. In addition, the resistance of the metal solid columnar structure is smaller, signal loss in the process of electric signal transmission between the suspended microbridge structure 40 and the CMOS measuring circuit system 1 is favorably reduced, the infrared detection performance of the infrared microbridge detector is improved, the size of the metal solid columnar structure is easier to accurately control, namely, the solid columnar structure can realize a columnar structure with a smaller size, the requirement on the size of a smaller chip is favorably met, and the miniaturization of the infrared microbridge detector is realized.

Fig. 4 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. Referring to fig. 1 and 4, fig. 4 exemplarily illustrates that the pillar structures include a plurality of layers of solid pillar structures, for example, two layers of solid pillar structures, that is, a solid pillar structure 61 and a solid pillar structure 62, so as to have the advantages of the solid pillar structures described in the above embodiments. It is also possible to arrange the pillar structures like fig. 4 to include multiple layers of hollow pillar structures to have the advantages of the hollow pillar structures described in the above embodiments. In addition, the columnar structure comprises a multi-layer hollow columnar structure or a multi-layer solid columnar structure, so that the types of the stand columns in the same columnar structure can be reduced, and the preparation process of the columnar structure is facilitated to be simplified.

Fig. 5 is a schematic cross-sectional structure view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure, and fig. 6 is a schematic cross-sectional structure view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. With reference to fig. 1, 5 and 6, fig. 5 exemplarily provides that the pillar structure 6 includes a layer of solid pillar structures 63 and a layer of hollow pillar structures 64, and the solid pillar structures 63 are located on a side of the hollow pillar structures 64 adjacent to the CMOS measurement circuitry, and fig. 6 exemplarily provides that the pillar structure 6 includes a layer of solid pillar structures 65 and a layer of hollow pillar structures 66, and the solid pillar structures 65 are located on a side of the hollow pillar structures 66 away from the CMOS measurement circuitry. Therefore, the columnar structure 6 formed by superposing the solid columnar structure and the hollow columnar structure is used for connecting the suspended micro-bridge structure 40 and the supporting base 42, so that the columnar structure 6 has the advantages of the hollow columnar structure and the solid columnar structure in the embodiment.

For example, the pillars in the same layer in the columnar structure 6 may be the same type of pillars, that is, the pillars in the same layer in the columnar structure 6 may be all solid columnar structures or all hollow columnar structures, so that the pillars in the same layer may be formed by the same process steps, which is beneficial to simplifying the manufacturing process of the columnar structure 6. In addition, the same columnar structure 6 may further include different types of columns, the same layer may also be provided with different types of columns, and the types of columns may be specifically set based on specific requirements of the infrared microbridge detector, which is not specifically limited in the embodiment of the present disclosure.

From this, including the multilayer stand through setting up columnar structure 6, be favorable to reducing the height of each layer stand in columnar structure 6, the height of stand is lower more, its straightness that steeps is better, consequently, easily form the better stand of straightness that steeps, thereby optimize the holistic straightness that steeps of columnar structure 6, columnar structure 6's whole size also can accomplish littleer, be favorable to reducing the shared space of columnar structure 6, thereby increase CMOS infrared sensing structure's effective area, and then improve the duty cycle, improve infrared detection sensitivity of infrared microbridge detector. In addition, the column structure 6 may further include more layers of columns, for example, three or more layers of columns, and each column may be a solid column structure or a hollow column structure.

With reference to fig. 1 to 6, the suspended microbridge structure includes an absorption plate 10 and a plurality of beam structures 11, where the absorption plate 10 is used to convert an infrared signal into an electrical signal and is electrically connected to the corresponding pillar structure 6 through the corresponding beam structure 11, and at least one hole structure may be formed on the absorption plate 10, where the hole structure at least penetrates through a dielectric layer in the absorption plate 10; and/or, at least one hole-shaped structure is formed on the beam structure 11, that is, only the absorption plate 10, only the beam structure 11, or both the absorption plate 10 and the beam structure 11 may be provided with a hole-shaped structure. For example, whether the hole structures on the absorption plate 10 or the beam structure 11 are hole structures, the hole structures may be circular hole structures, square hole structures, polygonal hole structures, or irregular pattern hole structures, the shape of the hole structures on the absorption plate 10 and the beam structure 11 is not specifically limited by the embodiments of the present disclosure, and the number of the hole structures on the absorption plate 10 and the beam structure 11 is not specifically limited by the embodiments of the present disclosure.

Therefore, at least one hole-shaped structure is formed on the absorption plate 10, the hole-shaped structure at least penetrates through the dielectric layer in the absorption plate 10, a sacrificial layer which needs to be released finally is arranged between the reflection layer 4 and the absorption plate 10, the sacrificial layer needs to be corroded by chemical reagents at the end of the infrared micro-bridge detector manufacturing process when the sacrificial layer is released, and the hole-shaped structure on the absorption plate 10 is beneficial to increasing the contact area between the chemical reagents for releasing and the sacrificial layer and accelerating the release rate of the sacrificial layer. In addition, the area of the absorption plate 10 is larger than that of the beam structure 11, the hole-shaped structure on the absorption plate 10 is beneficial to releasing the internal stress of the absorption plate 10, optimizing the planarization degree of the absorption plate 10, and being beneficial to improving the structural stability of the absorption plate 10, so that the structural stability of the whole infrared micro-bridge detector is improved. In addition, at least one hole-shaped structure is formed on the beam structure 11, which is beneficial to further reducing the thermal conductance of the beam structure 11 and improving the infrared detection sensitivity of the infrared microbridge detector.

With reference to fig. 1 to 3, at least one hermetic release isolation layer 3 may be included above the CMOS measurement circuitry 1, and the hermetic release isolation layer 3 is used to protect the CMOS measurement circuitry 1 from process influence during the release etching process for fabricating the CMOS infrared sensing structure 2. Optionally, the close release isolation layer 3 is located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 and/or in the CMOS infrared sensing structure 2, that is, the close release isolation layer 3 may be located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2, or the close release isolation layer 3 is located in the CMOS infrared sensing structure 2, or the close release isolation layer 3 is located at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 and is provided with the close release isolation layer 3, and the close release isolation layer 3 is used for protecting the CMOS measurement circuit system 1 from erosion when a sacrificial layer is released by a corrosion process, and the close release isolation layer 3 at least includes a dielectric layer, and a dielectric material constituting the close release isolation layer 3 includes at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon, silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon, or aluminum oxide.

Fig. 2 and 3 exemplarily set the hermetic release isolation layer 3 in the CMOS infrared sensing structure 2, the hermetic release isolation layer 3 may be, for example, a dielectric layer or multiple dielectric layers above the metal interconnection layer of the reflective layer 4, where the hermetic release isolation layer 3 is exemplarily shown as a dielectric layer, in which case the material constituting the hermetic release isolation layer 3 may include at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide, and the thickness of the hermetic release isolation layer 3 is smaller than that of the sacrificial layer. The resonant cavity of the infrared microbridge detector is realized by releasing the vacuum cavity after the silicon oxide sacrifice layer, the reflecting layer 4 is used as the reflecting layer of the resonant cavity, the sacrifice layer is positioned between the reflecting layer 4 and the suspended microbridge structure 40, and when at least one layer of closed release isolating layer 3 positioned on the reflecting layer 4 is arranged to select silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide and other materials as one part of the resonant cavity, the reflecting effect of the reflecting layer 4 is not influenced, the height of the resonant cavity can be reduced, the thickness of the sacrifice layer is further reduced, and the release difficulty of the sacrifice layer formed by silicon oxide is reduced. In addition, the sealed release isolation layer 3 and the columnar structure 6 are arranged to form a sealed structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Fig. 7 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. On the basis of the above embodiment, fig. 7 also sets the hermetic release isolation layer 3 in the CMOS infrared sensing structure 2, where the hermetic release isolation layer 3 may be, for example, one or more dielectric layers located above the metal interconnection layer of the reflection layer 4, here, the hermetic release isolation layer 3 is exemplarily shown to be one dielectric layer, and the hermetic release isolation layer 3 covers the columnar structure 6, where the material constituting the hermetic release isolation layer 3 may include at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon, or aluminum oxide, and the thickness of the hermetic release isolation layer 3 is also smaller than that of the sacrificial layer. Through setting up airtight release insulating layer 3 cladding columnar structure 6, can utilize airtight release insulating layer 3 as the support of columnar structure 6 department on the one hand, improve columnar structure 6's stability, guarantee columnar structure 6 and unsettled microbridge structure 40 and support base 42's electricity and be connected. On the other hand, the airtight release insulating layer 3 coating the columnar structure 6 can reduce the contact between the columnar structure 6 and the external environment, reduce the contact resistance between the columnar structure 6 and the external environment, further reduce the noise of the infrared microbridge detector pixel, improve the detection sensitivity of the infrared detection sensor, and prevent the electrical breakdown of the exposed metal of the columnar structure 6. Similarly, the resonant cavity of the infrared microbridge detector is realized by releasing the vacuum cavity after the silicon oxide sacrificial layer is released, the reflecting layer 4 is used as the reflecting layer of the resonant cavity, the sacrificial layer is positioned between the reflecting layer 4 and the suspended microbridge structure 40, and when at least one layer of airtight release isolation layer 3 positioned on the reflecting layer 4 is arranged to select silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide and other materials as a part of the resonant cavity, the reflecting effect of the reflecting layer 4 is not influenced, the height of the resonant cavity can be reduced, the thickness of the sacrificial layer is further reduced, and the release difficulty of the sacrificial layer formed by silicon oxide is reduced. In addition, the sealed release isolation layer 3 and the columnar structure 6 are arranged to form a sealed structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Fig. 8 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. Unlike the infrared microbridge detector having the structure shown in the above embodiment, in the infrared microbridge detector having the structure shown in fig. 8, the hermetic release isolation layer 3 is located at the interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2, for example, the hermetic release isolation layer 3 is located between the reflective layer 4 and the CMOS measurement circuit system 1, that is, the hermetic release isolation layer 3 is located below the metal interconnection layer of the reflective layer 4, and the supporting base 42 is electrically connected to the CMOS measurement circuit system 1 through a through hole penetrating through the hermetic release isolation layer 3. Specifically, since the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are both formed by using a CMOS process, after the CMOS measurement circuit system 1 is formed, a wafer including the CMOS measurement circuit system 1 is transferred to a next process to form the CMOS infrared sensing structure 2, since silicon oxide is a most commonly used dielectric material in the CMOS process, and silicon oxide is mostly used as an insulating layer between metal layers on the CMOS circuit, if no insulating layer is used as a barrier when silicon oxide with a thickness of about 2um is corroded, the circuit will be seriously affected, and in order to ensure that the silicon oxide medium on the CMOS measurement circuit system is not corroded when the silicon oxide of a sacrificial layer is released, a closed release insulating layer 3 is provided at an interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 according to the embodiment of the present disclosure. After the CMOS measuring circuit system 1 is prepared and formed, a closed release isolation layer 3 is prepared and formed on the CMOS measuring circuit system 1, the CMOS measuring circuit system 1 is protected by the closed release isolation layer 3, in order to ensure the electric connection between the support base 42 and the CMOS measuring circuit system 1, after the closed release isolation layer 3 is prepared and formed, a through hole is formed in the area of the closed release isolation layer 3 corresponding to the support base 42 by adopting an etching process, and the support base 42 is electrically connected with the CMOS measuring circuit system 1 through the through hole. In addition, the closed release isolation layer 3 and the support base 42 are arranged to form a closed structure, so that the CMOS measurement circuit system 1 is completely separated from the sacrificial layer, and the CMOS measurement circuit system 1 is protected.

Illustratively, the material constituting the hermetic release barrier layer 3 may include at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, a silicon germanium alloy, amorphous carbon, or aluminum oxide. Specifically, silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon, or aluminum oxide are all CMOS process corrosion-resistant materials, i.e., these materials are not corroded by the sacrificial layer release agent, so the hermetic release barrier layer 3 can be used to protect the CMOS measurement circuit system 1 from corrosion when the corrosion process is performed to release the sacrificial layer. In addition, the closed release isolation layer 3 covers the CMOS measurement circuit system 1, and the closed release isolation layer 3 can also be used for protecting the CMOS measurement circuit system 1 from being influenced by the process in the release etching process for manufacturing the CMOS infrared sensing structure 2. In addition, when being provided with at least one deck airtight release insulating layer 3 on reflection stratum 4, the material that sets up to constitute airtight release insulating layer 3 includes silicon, germanium, silicon germanium alloy, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, carborundum, aluminium oxide, at least one in silicon nitride or the silicon carbonitride, when setting up airtight release insulating layer 3 and improving the stability of columnar structure 6, airtight release insulating layer 3 can hardly influence the reflection course in the resonant cavity, can avoid airtight release insulating layer 3 to influence the reflection course of resonant cavity, and then avoid airtight release insulating layer 3 to the influence of infrared microbridge detector detection sensitivity.

With reference to fig. 1 to 8, a CMOS fabrication process of the CMOS infrared sensing structure 2 includes a Metal interconnection process, a via process, an IMD (Inter Metal Dielectric) process, and an RDL (redistribution layer) process, where the CMOS infrared sensing structure 2 includes at least two Metal interconnection layers, at least two Dielectric layers, and a plurality of interconnection vias, the Dielectric layers include at least one sacrificial layer and one heat-sensitive Dielectric layer, the Metal interconnection layers include at least a reflective layer 4 and an electrode layer, the heat-sensitive Dielectric layer includes a thermal sensitive material having a resistance temperature coefficient greater than a predetermined value, for example, the resistance temperature coefficient may be greater than or equal to 0.015/K, the thermal sensitive material having a resistance temperature coefficient greater than the predetermined value forms the heat-sensitive Dielectric layer, and the heat-sensitive Dielectric layer is configured to convert a temperature change corresponding to infrared radiation absorbed by the thermal sensitive Dielectric layer into a resistance change, and further convert an infrared target signal into a signal capable of being electrically read through the CMOS measurement circuit system 1. In addition, the heat-sensitive medium layer comprises a heat-sensitive material with a resistance temperature coefficient larger than a set value, and the resistance temperature coefficient can be larger than or equal to 0.015/K, so that the detection sensitivity of the infrared microbridge detector can be improved.

Specifically, the metal interconnection process is used to achieve electrical connection between upper and lower metal interconnection layers, for example, to achieve electrical connection between a conductive layer in the pillar structure 6 and the supporting base 42, the via process is used to form an interconnection via for connecting the upper and lower metal interconnection layers, for example, to form an interconnection via for connecting the conductive layer in the pillar structure 6 and the supporting base 42, the IMD process is used to achieve isolation between the upper and lower metal interconnection layers, that is, electrical insulation, for example, to achieve electrical insulation between the electrode layers in the absorber plate 10 and the beam structure 11 and the reflector plate 41, the RDL process is a redistribution layer process, that is, a process in which a layer of metal is re-distributed above the top metal of the circuit and is electrically connected to a metal pillar on the top metal of the circuit, for example, a tungsten pillar, the RDL process may be used to re-prepare the reflective layer 4 in the infrared microbridge detector on the top metal of the CMOS measurement circuit system 1, and the supporting base 42 on the reflective layer 4 is electrically connected to the top metal of the CMOS measurement circuit system 1. In addition, as shown in fig. 2, the CMOS manufacturing process of the CMOS measurement circuit system 1 may also include a metal interconnection process and a through hole process, the CMOS measurement circuit system 1 includes metal interconnection layers 101, dielectric layers 102 and a silicon substrate 103 at the bottom, which are arranged at intervals, and the upper and lower metal interconnection layers 101 are electrically connected through a through hole 104.

With reference to fig. 1 to 8, the CMOS infrared sensing structure 2 includes a resonant cavity formed by a reflective layer 4 and a heat sensitive medium layer, a suspended microbridge structure 40 for controlling heat transfer, and a columnar structure 6 having electrical connection and support functions, the CMOS measurement circuit system 1 is configured to measure and process an array resistance value formed by one or more CMOS infrared sensing structures 2 and convert an infrared signal into an image electrical signal, the infrared microbridge detector includes a plurality of infrared microbridge detector pixels arranged in an array, and each infrared microbridge detector pixel includes a CMOS infrared sensing structure 2. Specifically, the resonant cavity may be formed by a cavity between the reflective layer 4 and the heat-sensitive medium layer in the absorption plate 10, for example, the infrared light is reflected back and forth in the resonant cavity through the absorption plate 10, so as to improve the detection sensitivity of the infrared microbridge detector, and due to the arrangement of the columnar structure 6, the beam structure 11 and the absorption plate 10 form the suspended microbridge structure 10 for controlling the heat transfer, and the columnar structure 6 is electrically connected to the supporting base 42 and the corresponding beam structure 11, and is used for supporting the suspended microbridge structure 40 located on the columnar structure 6.

Fig. 9 is a schematic structural diagram of a CMOS measurement circuit system according to an embodiment of the present disclosure. With reference to fig. 1 to 9, the cmos measurement circuit system 1 includes a bias voltage generation circuit 7, a column-level analog front-end circuit 8 and a row-level circuit 9, an input end of the bias voltage generation circuit 7 is connected to an output end of the row-level circuit 9, an input end of the column-level analog front-end circuit 8 is connected to an output end of the bias voltage generation circuit 7, the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the column-level analog front-end circuit 8 includes a blind image element RD; the row-level circuit 9 is distributed in each pixel, selects a signal to be processed according to a row strobe signal of the timing sequence generating circuit, and outputs a current signal to the column-level analog front-end circuit 8 under the action of the bias generating circuit 7 to perform current-voltage conversion output; the row stage circuit 9 outputs a third bias voltage VRsm to the bias generation circuit 7 when being controlled by the row selection switch K1 to be gated, the bias generation circuit 7 outputs a first bias voltage V1 and a second bias voltage V2 according to an input constant voltage and the third bias voltage VRsm, and the column stage analog front-end circuit 8 obtains two currents according to the first bias voltage V1 and the second bias voltage V2, performs transimpedance amplification on a difference between the two generated currents, and outputs the amplified current as an output voltage.

Specifically, the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the row-level circuit 9 is configured to generate a third bias voltage VRsm according to a gating state of the row selection switch K1. Illustratively, the row-level image elements Rsm may be subjected to a shading process, so that the row-level image elements Rsm are subjected to a fixed radiation of a shading sheet having a temperature constantly equal to the substrate temperature, the row selection switch K1 may be implemented by a transistor, the row selection switch K1 is closed, and the row-level image elements Rsm are connected to the bias generation circuit 7, that is, the row-level circuit 9 outputs the third bias voltage VRsm to the bias generation circuit 7 when being controlled by the row selection switch K1 to be turned on. The bias generating circuit 7 may include a first bias generating circuit 71 and a second bias generating circuit 72, the first bias generating circuit 71 being configured to generate a first bias voltage V1 according to an input constant voltage, which may be, for example, a positive power supply signal with a constant voltage. The second bias generating circuit 72 may include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 controlling the gate driving sub-circuits 722 to generate the corresponding second bias voltages V2, respectively, according to the third bias voltage VRsm.

The column-level analog front-end circuit 8 includes a plurality of column control sub-circuits 81, the column control sub-circuits 81 are disposed in correspondence with the gate driving sub-circuits 722, and exemplarily, the column control sub-circuits 81 may be disposed in one-to-one correspondence with the gate driving sub-circuits 722, and the gate driving sub-circuits 722 are configured to provide the second bias voltage V2 to the corresponding column control sub-circuits 81 according to their own gate states. For example, it may be set that when the gate driving sub-circuit 722 is gated, the gate driving sub-circuit 722 supplies the second bias voltage V2 to the corresponding column control sub-circuit 81; when the gate driving sub-circuit 722 is not gated, the gate driving sub-circuit 722 stops supplying the second bias voltage V2 to the corresponding column control sub-circuit 81.

The column-level analog front-end circuit 8 comprises an effective pixel RS and a blind pixel RD, the column control sub-circuit is used for generating a first current I1 according to a first bias voltage V1 and the blind pixel RD, generating a second current I2 according to a second bias voltage V2 and the effective pixel RS, performing transimpedance amplification on a difference value of the first current I1 and the second current I2, and outputting the amplified difference value, and the temperature drift amounts of the row-level image pixel Rsm and the effective pixel RS are the same at the same ambient temperature.

Illustratively, the row-level image elements Rsm are thermally insulated from the CMOS measurement circuitry 1 and are shaded, and the row-level image elements Rsm are subjected to a fixed radiation from a shade sheet having a temperature constantly equal to the substrate temperature. The absorption plate 10 of the active pixel RS is thermally insulated from the CMOS measurement circuitry 1 and the active pixel RS receives external radiation. The absorbing plates 10 of the row-level mirror image elements Rsm and the effective elements RS are thermally insulated from the CMOS measuring circuit system 1, so that the row-level mirror image elements Rsm and the effective elements RS have a self-heating effect.

When the row selection switch K1 is used for gating the corresponding row-level mirror image element Rsm, the resistance value of both the row-level mirror image element Rsm and the effective pixel RS changes due to joule heat, but when the row-level mirror image element Rsm and the effective pixel RS are subjected to the same fixed radiation, the resistance value of the row-level mirror image element Rsm and the resistance value of the effective pixel RS are the same, the temperature coefficients of the row-level mirror image element Rsm and the temperature coefficient of the effective pixel RS are also the same, the temperature drift amounts of the row-level mirror image element Rsm and the effective pixel RS at the same environmental temperature are the same, the change of the row-level mirror image element Rsm and the effective pixel RS at the same environmental temperature are synchronized, the resistance value change of the row-level mirror image element Rsm and the effective pixel RS due to the self-heating effect is effectively compensated, and the stable output of the CMOS measurement circuit system 1 is realized.

In addition, by arranging the second bias generating circuit 72 to include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 is configured to control the gate driving sub-circuits 722 to generate corresponding second bias voltages V2 respectively according to the row control signal, so that each row of pixels has one path to drive the entire row of pixels in the row individually, thereby reducing the requirement for the second bias voltage V2, that is, improving the driving capability of the bias generating circuit 7, and facilitating the use of the CMOS measurement circuit system 1 to drive a larger-scale infrared microbridge detector pixel array. In addition, the specific detailed operation principle of the CMOS measurement circuit system 1 is well known to those skilled in the art, and will not be described herein.

Alternatively, the CMOS infrared sensing structure 2 may be disposed on a metal interconnect layer of the CMOS measurement circuitry 1 or fabricated on the same layer. Specifically, the metal interconnection layer of the CMOS measurement circuitry 1 may be a top metal layer in the CMOS measurement circuitry 1, and in conjunction with fig. 1 to 8, the CMOS infrared sensing structure 2 may be fabricated on the top metal interconnection layer of the CMOS measurement circuitry 1, and the CMOS infrared sensing structure 2 is electrically connected to the CMOS measurement circuitry 1 through a supporting base 42 on the top metal interconnection layer of the CMOS measurement circuitry 1, so as to transmit the electrical signal converted by the infrared signal to the CMOS measurement circuitry 1.

Fig. 10 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in an embodiment of the present disclosure. As shown in fig. 10, the CMOS infrared sensing structure 2 may also be prepared on the same layer as the metal interconnection layer of the CMOS measurement circuitry 1, that is, the CMOS measurement circuitry 1 and the CMOS infrared sensing structure 2 are arranged on the same layer, for example, as shown in fig. 10, the CMOS infrared sensing structure 2 may be arranged on one side of the CMOS measurement circuitry 1, and the top of the CMOS measurement circuitry 1 may also be provided with a hermetic release isolation layer 3 to protect the CMOS measurement circuitry 1.

Optionally, in conjunction with fig. 1 to 10, the sacrificial layer is used to make the CMOS infrared sensing structure 2 form a hollow structure, the material constituting the sacrificial layer is silicon oxide, and the sacrificial layer is etched by a post-CMOS process. For example, the post-CMOS process may etch the sacrificial layer using at least one of gases having a corrosive characteristic to silicon oxide, such as gaseous hydrogen fluoride, carbon tetrafluoride, and trifluoromethane. Specifically, a sacrificial layer (not shown in fig. 1 to 10) is provided between the reflective layer 4 and the suspended microbridge structure 40, and when the hermetic release isolation layer 3 is provided on the reflective layer 4, the sacrificial layer is provided between the hermetic release isolation layer 3 and the suspended microbridge structure 40, and the material constituting the sacrificial layer is silicon oxide, so as to be compatible with a CMOS process, and a post-CMOS process can be adopted, that is, the post-CMOS process corrodes the sacrificial layer to release the sacrificial layer in the final infrared detection chip product.

Optionally, the absorption plate 10 is used for absorbing an infrared target signal and converting the infrared target signal into an electrical signal, the absorption plate 10 includes a metal interconnection layer and at least one thermal sensitive medium layer, and the metal interconnection layer in the absorption plate 10 is an electrode layer in the absorption plate 10 and is used for transmitting the electrical signal converted from the infrared signal. The beam structure 11 and the columnar structure 6 are used for transmitting electric signals and for supporting and connecting the absorption plate 10, the electrode layer in the absorption plate 10 comprises two patterned electrode structures, the two patterned electrode structures respectively output positive electric signals and grounding electric signals, the positive electric signals and the grounding electric signals are transmitted to the supporting base 42 electrically connected with the columnar structure 6 through the different beam structures 11 and the different columnar structures 6 and then transmitted to the CMOS measuring circuit system 1, the beam structure 11 at least comprises a metal interconnection layer, the metal interconnection layer in the beam structure 11 is the electrode layer in the beam structure 11, and the electrode layer in the beam structure 11 is electrically connected with the electrode layer in the absorption plate 10. The beam structure 11 and the CMOS measurement circuit system 1 are connected by the columnar structure 6 through a metal interconnection process and a through hole process, the upper side of the columnar structure 6 is electrically connected to an electrode layer in the beam structure 11 through a through hole penetrating through the sacrificial layer, the lower side of the columnar structure 6 is electrically connected to a corresponding support base 42 through a through hole penetrating through a dielectric layer on the support base 42, and thus the electrode layer in the beam structure 11 is electrically connected to the corresponding support base 42 through the corresponding columnar structure 6. The reflecting plate 41 is used for reflecting infrared signals and forms a resonant cavity with the heat-sensitive medium layer, that is, the reflecting plate 41 is used for reflecting infrared signals and forms a resonant cavity with the heat-sensitive medium layer, and the reflecting layer 4 comprises at least one metal interconnection layer which is used for forming a supporting base 42 and is also used for forming the reflecting plate 41.

Optionally, the beam structure 11 includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, the absorber plate 10 includes the first dielectric layer 13 and the electrode layer 14, or the absorber plate 10 includes the electrode layer 14 and the second dielectric layer 15, or the absorber plate 10 includes the first dielectric layer 13, the electrode layer 14, and the second dielectric layer 15, or the absorber plate 10 includes the support layer, the first dielectric layer 13, the electrode layer 14, and the second dielectric layer 15, or the absorber plate 10 includes the first dielectric layer 13, the electrode layer 14, the second dielectric layer 15, and a passivation layer, or the absorber plate 10 includes the support layer, the first dielectric layer 13, the electrode layer 14, the second dielectric layer 15, and the passivation layer; the material forming the first dielectric layer 13 includes at least one of materials with a temperature coefficient of resistance greater than a set value, which are prepared from amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon, and the material forming the second dielectric layer 15 includes at least one of materials with a temperature coefficient of resistance greater than a set value, which are prepared from amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon, and the set value may be 0.015/K, for example.

Specifically, with reference to fig. 2, fig. 3, fig. 7 and fig. 10, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes a first dielectric layer 13, an electrode layer 14 and a second dielectric layer 15, the absorber plate 10 sequentially includes the first dielectric layer 13, the electrode layer 14 and the second dielectric layer 15, that is, the same film layers of the beam structure 11 and the absorber plate 10 may be arranged and manufactured at the same time, the material forming the first dielectric layer 13 includes at least one of materials having a temperature coefficient of resistance greater than a set value and prepared from amorphous silicon, amorphous germanium silicon or amorphous carbon, the material forming the second dielectric layer 15 includes at least one of materials having a temperature coefficient of resistance greater than a set value and prepared from amorphous silicon, amorphous germanium silicon or amorphous carbon, that is, the first dielectric layer 13 serves as a support layer and also serves as a thermally sensitive dielectric layer, the second dielectric layer 15 serves as a passivation layer and also serves as a thermally sensitive dielectric layer, which is beneficial to reducing the thickness of the absorber plate 10, reducing the thermal conductivity of the beam structure 11, and simplifying the preparation process of the infrared micro-bridge detector.

Specifically, the supporting layer is used for supporting an upper film layer in the suspended microbridge structure 40 after the sacrificial layer is released, the heat-sensitive medium layer is used for converting infrared temperature detection signals into infrared detection electric signals, the electrode layer 14 is used for transmitting the infrared detection electric signals converted by the heat-sensitive medium layer to the CMOS measurement circuit system 1 through the beam structures 11 on the left side and the right side, the two beam structures 11 respectively transmit positive and negative signals of the infrared detection electric signals, a reading circuit in the CMOS measurement circuit system 1 realizes non-contact infrared temperature detection through analysis of the obtained infrared detection electric signals, and the passivation layer is used for protecting the electrode layer 14 from oxidation or corrosion. Corresponding to the absorption plate 10 and the beam structure 11, the electrode layer 14 is located in a closed space formed by the first dielectric layer 13, namely the support layer, and the second dielectric layer 15, namely the passivation layer, so that the protection of the electrode layer 14 in the absorption plate 10 and the beam structure 11 is realized.

Exemplarily, on the premise that the material constituting the first dielectric layer 13 includes at least one of the materials having a temperature coefficient of resistance greater than a set value, and the material constituting the second dielectric layer 15 includes at least one of the materials having a temperature coefficient of resistance greater than a set value, the materials including the materials having a temperature coefficient of resistance greater than a set value, the film layers in the beam structure 11 and the absorber plate 10 may also satisfy the following conditions: in the first case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, and the absorber plate 10 sequentially includes the first dielectric layer 13 and the electrode layer 14; in the second case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, and the absorber plate 10 sequentially includes the electrode layer 14 and the second dielectric layer 15; in a third case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, the absorption plate 10 sequentially includes a supporting layer, the first dielectric layer 13, the electrode layer 14, and the second dielectric layer 15, or the absorption plate 10 sequentially includes a supporting layer, an electrode layer 14, a first dielectric layer 13, and a second dielectric layer 15, or the absorption plate 10 sequentially includes a supporting layer, a first dielectric layer 13, a second dielectric layer 15, and an electrode layer 14; in a fourth situation, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, and the absorber plate 10 sequentially includes the first dielectric layer 13, the electrode layer 14, the second dielectric layer 15, and a passivation layer, or the absorber plate 10 sequentially includes the electrode layer 14, the first dielectric layer 13, the second dielectric layer 15, and the passivation layer, or the absorber plate 10 sequentially includes the first dielectric layer 13, the second dielectric layer 15, the electrode layer 14, and the passivation layer; in a fifth case, it may be set that, in a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, and the absorber plate 10 sequentially includes a support layer, a first dielectric layer 13, an electrode layer 14, a second dielectric layer 15, and a passivation layer, or the absorber plate 10 sequentially includes a support layer, an electrode layer 14, a first dielectric layer 13, a second dielectric layer 15, and a passivation layer, or the absorber plate 10 sequentially includes a support layer, a first dielectric layer 13, a second dielectric layer 15, an electrode layer 14, and a passivation layer. In the above five cases, the first dielectric layer and the second dielectric layer can both serve as heat sensitive dielectric layers, the dielectric layer located at the lowest position of the suspended microbridge structure 40 can also serve as a supporting layer, and the dielectric layer located at the highest position of the suspended microbridge structure 40 can also serve as a passivation layer.

Optionally, the beam structure 11 includes an electrode layer 14, or the beam structure 11 includes a first dielectric layer 13 and an electrode layer 14, or the beam structure 11 includes an electrode layer 14 and a second dielectric layer 15, or the beam structure 11 includes an electrode layer 14 and a heat sensitive dielectric layer 12, or the beam structure 11 includes a first dielectric layer 13, an electrode layer 14 and a second dielectric layer 15, or the beam structure 11 includes a first dielectric layer 13, an electrode layer 14 and a heat sensitive dielectric layer 12, or the beam structure 11 includes an electrode layer 14, a heat sensitive dielectric layer 12 and a second dielectric layer 15, or the beam structure 11 includes a first dielectric layer 13, an electrode layer 14, a heat sensitive dielectric layer 12 and a second dielectric layer 15, and the absorption plate 10 includes an electrode layer 14 and a heat sensitive dielectric layer 12, or the absorption plate 10 includes a first dielectric layer 13, an electrode layer 14 and a heat sensitive dielectric layer 12, or the absorption plate 10 includes an electrode layer 14, a heat sensitive dielectric layer 12 and a second dielectric layer 15, or the absorption plate 10 includes a first dielectric layer 13, an electrode layer 14, a heat sensitive dielectric layer 12 and a second dielectric layer 15; the material forming the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, the material forming the second dielectric layer 15 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, the material forming the thermally sensitive dielectric layer 12 includes at least one of materials having a temperature coefficient of resistance greater than a set value, which is prepared from titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon, germanium, silicon germanium oxide, germanium silicon oxide, graphene, a barium strontium titanate film, copper or platinum, and the set value may be, for example, 0.015/K.

Fig. 11 is a schematic cross-sectional structure view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure, and fig. 12 is a schematic cross-sectional structure view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. With reference to fig. 11 and 12, it may be arranged that, along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes a first dielectric layer 13, an electrode layer 14, and a second dielectric layer 15, and the absorption plate 10 sequentially includes the first dielectric layer 13, the electrode layer 14, the heat-sensitive dielectric layer 12, and the second dielectric layer 15, where the first dielectric layer 13 serves as a supporting layer, the second dielectric layer 15 serves as a passivation layer, and the heat-sensitive dielectric layer 12 converts an infrared signal into an electrical signal. Corresponding to the absorption plate 10 and the beam structure 11, the electrode layer 14 is located in a closed space formed by the first dielectric layer 13, namely the support layer, and the second dielectric layer 15, namely the passivation layer, so that the protection of the electrode layer 14 in the absorption plate 10 and the beam structure 11 is realized.

For example, on the premise that the material forming the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide, or amorphous carbon, and the material forming the second dielectric layer 15 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide, or amorphous carbon, the following conditions may preferably be satisfied in the beam structure 11 and the film layer in the absorber plate 10: in the first case, the beam structure 11 may be configured to include the electrode layer 14, and the absorption plate 10 sequentially includes the electrode layer 14 and the thermal sensitive medium layer 12 or the absorption plate 10 sequentially includes the thermal sensitive medium layer 12 and the electrode layer 14 along the direction away from the CMOS measurement circuit system 1; in a second case, the beam structure 11 may include an electrode layer 14, and the absorption plate 10 sequentially includes a first dielectric layer 13, an electrode layer 14 and a heat-sensitive dielectric layer 12 or the absorption plate 10 sequentially includes a first dielectric layer 13, a heat-sensitive dielectric layer 12 and an electrode layer 14 along a direction away from the CMOS measurement circuit system 1; in a third case, the beam structure 11 may include an electrode layer 14, and along a direction away from the CMOS measurement circuit system 1, the absorption plate 10 sequentially includes the electrode layer 14, the thermal sensitive medium layer 12, and the second medium layer 15, or the absorption plate 10 sequentially includes the thermal sensitive medium layer 12, the electrode layer 14, and the second medium layer 15; a fourth case may be that the beam structure 11 comprises an electrode layer 14, and the absorption plate 10 comprises a first dielectric layer 13, an electrode layer 14, a thermally sensitive dielectric layer 12 and a second dielectric layer 15 in sequence or the absorption plate 10 comprises a first dielectric layer 13, a thermally sensitive dielectric layer 12, an electrode layer 14 and a second dielectric layer 15 in sequence along a direction away from the CMOS measurement circuitry 1.

A fifth case may be set along a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the first dielectric layer 13 and the electrode layer 14 or the beam structure 11 sequentially includes the electrode layer 14 and the second dielectric layer 15, and the absorption plate 10 sequentially includes the electrode layer 14 and the heat-sensitive dielectric layer 12 or the absorption plate 10 sequentially includes the heat-sensitive dielectric layer 12 and the electrode layer 14; in a sixth case, the beam structure 11 sequentially includes a first dielectric layer 13 and an electrode layer 14 or the beam structure 11 sequentially includes an electrode layer 14 and a second dielectric layer 15, and the absorption plate 10 sequentially includes a first dielectric layer 13, an electrode layer 14 and a heat-sensitive dielectric layer 12 or the absorption plate 10 sequentially includes a first dielectric layer 13, a heat-sensitive dielectric layer 12 and an electrode layer 14; in a seventh case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and sequentially includes the first dielectric layer 13 and the electrode layer 14, or the beam structure 11 sequentially includes the electrode layer 14 and the second dielectric layer 15, and the absorption plate 10 sequentially includes the electrode layer 14, the heat-sensitive dielectric layer 12, and the second dielectric layer 15, or the absorption plate 10 sequentially includes the heat-sensitive dielectric layer 12, the electrode layer 14, and the second dielectric layer 15; in an eighth case, it may be set that in a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes a first dielectric layer 13 and an electrode layer 14 or the beam structure 11 sequentially includes an electrode layer 14 and a second dielectric layer 15, and the absorber plate 10 sequentially includes a first dielectric layer 13, an electrode layer 14, a heat-sensitive dielectric layer 12 and a second dielectric layer 15 or the absorber plate 10 sequentially includes a first dielectric layer 13, a heat-sensitive dielectric layer 12, an electrode layer 14 and a second dielectric layer 15.

A ninth case may be set in a direction away from the CMOS measurement circuit system 1, where the beam structure 11 sequentially includes the electrode layer 14 and the heat sensitive medium layer 12, and the absorption plate 10 sequentially includes the electrode layer 14 and the heat sensitive medium layer 12, or the beam structure 11 sequentially includes the heat sensitive medium layer 12 and the electrode layer 14, and the absorption plate 10 sequentially includes the heat sensitive medium layer 12 and the electrode layer 14; in a tenth case, the beam structure 11 may be arranged along a direction away from the CMOS measurement circuit system 1, and the beam structure 11 sequentially includes the electrode layer 14 and the heat sensitive medium layer 12, and the absorption plate 10 sequentially includes the first medium layer 13, the electrode layer 14, and the heat sensitive medium layer 12, or the beam structure 11 sequentially includes the heat sensitive medium layer 12 and the electrode layer 14, and the absorption plate 10 sequentially includes the first medium layer 13, the heat sensitive medium layer 12, and the electrode layer 14; an eleventh case may be that, along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes the electrode layer 14 and the thermal sensitive medium layer 12, and the absorption plate 10 sequentially includes the electrode layer 14, the thermal sensitive medium layer 12, and the second medium layer 15, or the beam structure 11 sequentially includes the thermal sensitive medium layer 12 and the electrode layer 14, and the absorption plate 10 sequentially includes the thermal sensitive medium layer 12, the electrode layer 14, and the second medium layer 15; a twelfth case may be that, along a direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes the electrode layer 14 and the heat sensitive medium layer 12, and the absorption plate 10 sequentially includes the first medium layer 13, the electrode layer 14, the heat sensitive medium layer 12, and the second medium layer 15, or the beam structure 11 sequentially includes the heat sensitive medium layer 12 and the electrode layer 14, and the absorption plate 10 sequentially includes the first medium layer 13, the heat sensitive medium layer 12, the electrode layer 14, and the second medium layer 15.

Referring to the above discussion logics of different cases, when the material forming the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide, or amorphous carbon, and the material forming the second dielectric layer 15 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide, or amorphous carbon, there may be a plurality of combinations of the case of selecting one film layer for the beam structure 11 and the case of selecting one film layer for the absorber plate 10, that is, the case of selecting one film layer for the beam structure 11 and the case of selecting one film layer for the absorber plate 10 may be combined arbitrarily to form an infrared microbridge detector with a plurality of structures, which is not described herein again. It should be noted that, no matter what the above arrangement scheme of the beam structure 11 and the film layer of the absorption plate 10 is, it is necessary to ensure that at least the electrode layer 14 is in the beam structure 11, at least the electrode layer 14 is in the absorption plate 12, and the dielectric layer is used as a heat sensitive dielectric layer.

Illustratively, the material constituting the electrode layer 14 may be configured to include at least one of titanium, titanium nitride, tantalum nitride, titanium tungsten alloy, nickel chromium alloy, nickel platinum alloy, nickel silicon alloy, nickel, chromium, platinum, tungsten, aluminum, or copper, wherein when the material of the electrode layer 14 is at least one of titanium, titanium nitride, tantalum, or tantalum nitride, the electrode layer 14 is preferably configured to be coated with the first dielectric layer 13 and the second dielectric layer 15, so as to prevent the electrode layer 14 from being affected by the etching process. In addition, in the above embodiment, at least one hole structure may be formed on the absorption plate 10, the hole structure at least penetrates through the dielectric layer in the absorption plate 10, at least one hole structure is formed on the beam structure 11, when the beam structure 11 only includes the electrode layer 14, the hole structure on the beam structure 11 penetrates through the electrode layer 14 in the beam structure 11, when the beam structure 11 includes the dielectric layer, the hole structure at least penetrates through the dielectric layer in the beam structure 11, taking the infrared micro-bridge detector of the structure shown in fig. 2 as an example, at this time, the hole structure on the absorption plate 10 may penetrate through the first dielectric layer 13 and the second dielectric layer 15 in the absorption plate 10, the hole structure on the absorption plate 10 may also penetrate through the first dielectric layer 13, the electrode layer 14 and the second dielectric layer 15 in the absorption plate 10, the hole structure on the beam structure 11 may penetrate through the first dielectric layer 13 and the second dielectric layer 15 in the beam structure 11 where the electrode layer 14 is not provided, or the hole structure on the beam structure 11 may penetrate through the first dielectric layer 13, the electrode layer 14 and the second dielectric layer 15 in the beam structure 11. Taking the infrared microbridge detector with the structure shown in fig. 11 and 12 as an example, at this time, the hole structure on the absorption plate 10 may penetrate through the first dielectric layer 13 and the second dielectric layer 15 in the absorption plate 10, the hole structure on the absorption plate 10 may also penetrate through the first dielectric layer 13, the electrode layer 14, the heat-sensitive dielectric layer 12 and the second dielectric layer 15 in the absorption plate 10, the hole structure on the beam structure 11 may penetrate through the first dielectric layer 13 and the second dielectric layer 15 in the beam structure 11 where the electrode layer 14 is not located, or the hole structure on the beam structure 11 penetrates through the first dielectric layer 13, the electrode layer 14 and the second dielectric layer 15 in the beam structure 11.

Optionally, the infrared microbridge detector may further include a metamaterial structure and/or a polarization structure, and the metamaterial structure or the polarization structure is at least one metal interconnection layer. Fig. 13 is a schematic perspective view of another infrared micro-bridge detector pixel provided in the embodiment of the disclosure, and as shown in fig. 13, a metal interconnection layer forming a metamaterial structure may include a plurality of metal repeating units 20 arranged in an array, each metal repeating unit includes two L-shaped patterned structures 21 arranged diagonally, and at this time, an infrared absorption spectrum band of the infrared micro-bridge detector is a 3-30 μm band. As shown in fig. 14, a plurality of patterned hollow structures 22 arranged in an array may be disposed on the metal interconnection layer forming the metamaterial structure, the patterned hollow structures 22 are in an open ring shape, and an infrared absorption spectrum band of the infrared microbridge detector is a band from 3 micrometers to 30 micrometers. As shown in fig. 15, a plurality of straight-line strip structures 23 and a plurality of folded strip structures 24 are disposed on the metal interconnection layer forming the metamaterial structure, and the straight-line strip structures 23 and the folded strip structures 24 are alternately arranged in a direction perpendicular to the straight-line strip structures 23, where an infrared absorption spectrum band of the infrared microbridge detector is a band from 8 micrometers to 24 micrometers. As shown in fig. 16, a plurality of patterned hollow structures 25 arranged in an array may be disposed on the metal interconnection layer forming the metamaterial structure, the patterned hollow structures 25 are regular hexagons, and the infrared absorption spectrum band of the infrared microbridge detector is a 3-30 μm band at this time. It should be noted that, in the embodiments of the present disclosure, specific patterns on the metal interconnection layer constituting the metamaterial structure are not limited, and it is sufficient to ensure that the repeated patterns can realize the functions of the metamaterial structure or the polarization structure.

Specifically, the metamaterial is a material which is based on the generalized snell's law and performs electromagnetic or optical beam regulation and control by controlling wave front phase, amplitude and polarization, and can be also called as a super surface or a super structure, wherein the super surface or the super structure is an ultrathin two-dimensional array plane, and the characteristics of electromagnetic waves such as phase, polarization mode, propagation mode and the like can be flexibly and effectively manipulated. The present disclosure forms an electromagnetic metamaterial structure using the patterned structures as shown in fig. 13 to fig. 16, that is, an artificial composite structure or a composite material having extraordinary electromagnetic properties is formed, so as to implement clipping of electromagnetic waves and light waves, thereby obtaining an electromagnetic wave absorption special device.

Fig. 17 is a schematic top view of a polarization structure according to an embodiment of the present disclosure. As shown in fig. 17, the polarization structure 26 may include a plurality of gratings 27 arranged in sequence, an interval between adjacent gratings 27 is 10nm to 500nm, the gratings 27 may be linear as shown in fig. 17, or may be curved as shown in fig. 18 and 19, the gratings 27 in the polarization structure 26 may be rotated or combined at any angle, and the polarization structure 26 may be disposed such that the CMOS sensing structure absorbs polarized light in a specific direction. Illustratively, the grating 27 may be a structure formed by etching a metal thin film, i.e., a metal interconnection layer. Specifically, polarization is an important information of light, and polarization detection can expand the information quantity from three dimensions, such as light intensity, light spectrum and space, to seven dimensions, such as light intensity, light spectrum, space, polarization degree, polarization azimuth angle, polarization ellipse ratio and rotation direction, and since the polarization degree of the ground object background is far smaller than that of the artificial target, the infrared polarization detection technology has very important application in the field of space remote sensing. In the existing polarization detection system, a polarization element is independent from a detector, and a polarizing film needs to be added on a lens of the whole machine or a polarization lens needs to be designed. The existing polarization detection system, which acquires polarization information by rotating a polarization element, has disadvantages of complicated optical elements and complicated optical path system. In addition, the polarization image acquired by combining the polarizer and the detector needs to be processed by an image fusion algorithm, which is not only complex but also relatively inaccurate.

According to the embodiment of the disclosure, the polarization structure 26 and the uncooled infrared microbridge detector are monolithically integrated, so that monolithic integration of the polarization-sensitive infrared microbridge detector can be realized, difficulty of optical design is greatly reduced, an optical system is simplified, optical elements are reduced, and cost of the optical system is reduced. In addition, the images acquired by the single-chip integrated polarized uncooled infrared micro-bridge detector are original infrared image information, the CMOS measuring circuit system 1 can obtain accurate image information only by processing signals detected by the infrared micro-bridge detector, image fusion of the existing detector is not needed, and authenticity and effectiveness of the images are greatly improved. In addition, the polarization structure 26 can also be located above the absorption plate 10 and is not in contact with the absorption plate 10, that is, the polarization structure 26 can be a suspended structure located above the suspended microbridge structure 40, the polarization structure 26 and the suspended microbridge structure 40 can adopt a column connection supporting mode or a bonding supporting mode, and the polarization structure 26 and the infrared microbridge detector pixel can be bonded in a one-to-one correspondence manner or can also adopt a whole chip bonding manner. Therefore, the independently suspended metal grating structure cannot cause deformation of the infrared sensitive micro-bridge structure, and the heat-sensitive characteristic of the sensitive film cannot be influenced.

Illustratively, referring to fig. 1 to fig. 19, when the suspension micro-bridge structure 40 includes a first dielectric layer 13 and a second dielectric layer 15, the meta-material structure or the polarization structure may be at least one metal interconnection layer on a side of the first dielectric layer 13 adjacent to the CMOS measurement circuit system 1, for example, the metal interconnection layer constituting the meta-material structure or the polarization structure may be disposed on a side of the first dielectric layer 13 adjacent to the CMOS measurement circuit system 1 and in contact with the first dielectric layer 13, that is, the metal interconnection layer is located at the lowest position of the suspension micro-bridge structure 40. For example, the meta-material structure or the polarization structure may also be at least one metal interconnection layer on the side of the second dielectric layer 15 away from the CMOS measurement circuitry 1, and for example, the metal interconnection layer constituting the meta-material structure or the polarization structure may be located on the side of the second dielectric layer 15 away from the CMOS measurement circuitry 1 and in contact with the second dielectric layer 15, that is, the metal interconnection layer is located at the uppermost portion of the suspended microbridge structure 40. Illustratively, the metamaterial structure or the polarization structure may also be at least one metal interconnection layer located between the first dielectric layer 13 and the second dielectric layer 15 and electrically insulated from the electrode layer 14, for example, the metal interconnection layer constituting the metamaterial structure or the polarization structure may be located between the first dielectric layer 13 and the electrode layer 14 and electrically insulated from the electrode layer 14 or located between the second dielectric layer 15 and the electrode layer 14 and electrically insulated from the electrode layer 14. For example, the electrode layer 14 may also be disposed as a metamaterial structure layer or a polarization structure layer, that is, the patterned structure described in the above embodiments may be formed on the electrode layer 14.

Optionally, the columnar structure 6 may include at least one layer of solid columnar structure, the solid columnar structure includes the solid structure 601, as shown in fig. 3, a sidewall of the solid structure 601 may be disposed in contact with a sacrificial layer (not shown in fig. 3), a material constituting the solid structure 601 includes at least one of tungsten, copper, or aluminum, that is, the columnar structure 6 only includes a solid tungsten column, or a copper column, or an aluminum column, and the sidewall of the solid structure 601 is disposed in contact with the sacrificial layer, so that a manufacturing process of the columnar structure 6 is relatively simple and easy to implement, and it is beneficial to reduce a manufacturing difficulty of the entire infrared microbridge detector.

Fig. 20 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. Unlike the infrared microbridge detector of the structure shown in fig. 3, the infrared microbridge detector of the structure shown in fig. 20 is configured such that the sidewall of the solid structure 601 is wrapped with at least one dielectric layer 602 and the solid structure 601 is disposed in contact with one dielectric layer 602, fig. 20 exemplarily configures the sidewall of the solid structure 601 wrapped with one dielectric layer 602 and the solid structure 601 is disposed in contact with the dielectric layer 602, the material constituting the solid structure 601 includes at least one of tungsten, copper or aluminum, and the material constituting the dielectric layer 602 may include at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon germanium oxide, graphene, copper or platinum.

Specifically, at least one dielectric layer 602 coating the solid structure 601 can play a role of electrical insulation, and when the dielectric layer 602 is used to protect the solid structure 601 from being corroded by external materials, the dielectric layer 602 can be used as an auxiliary supporting structure of the columnar structure 6, and supports the suspended micro-bridge structure 40 together with the solid structure 601, which is beneficial to improving the mechanical stability of the columnar structure 6, so that the structural stability of the infrared sensor is improved. In addition, the material forming the dielectric layer 602 may include at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon, germanium, silicon germanium oxide, graphene, copper, or platinum, and none of the foregoing materials is corroded by gas-phase hydrogen fluoride, carbon tetrafluoride, or trifluoromethane, so that the dielectric layer 602 covering the solid structure 601 is not corroded when the sacrificial layer is corroded by gas-phase hydrogen fluoride, carbon tetrafluoride, and trifluoromethane in the subsequent process steps. For example, as shown in fig. 20, the dielectric layer 602 covering the solid structure 601 is set as the first dielectric layer 13 in the suspended microbridge structure 40, and the dielectric layer covering the solid structure 601 may be a separately manufactured dielectric layer, or the dielectric layer covering the solid structure 601 may also be set as the second dielectric layer 15 or the heat-sensitive dielectric layer 12 in the suspended microbridge structure 40.

Fig. 21 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. Unlike the infrared microbridge detector of the structure shown in fig. 3 and 20, the infrared microbridge detector of the structure shown in fig. 21 has a sidewall of the solid structure 601 and a surface of the solid structure 601 adjacent to the CMOS measurement circuitry 1 coated with at least one adhesion layer 603, fig. 21 exemplarily provides a sidewall of the solid structure 601 and a surface of the solid structure 601 adjacent to the CMOS measurement circuitry 1 coated with one adhesion layer 603, a sidewall of the outermost periphery of the columnar structure 6, which is away from the solid structure 601, is coated with a dielectric layer 604, a material constituting the solid structure 601 includes at least one of tungsten, copper or aluminum, a material constituting the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum or tantalum nitride, and a material constituting the dielectric layer 604 includes at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, graphene, copper or platinum.

Specifically, adhesion layer 603 is used for reinforcing the connection performance between columnar structure 6 and the support base 42, including intensifier mechanical connection performance, promote structural stability, also include intensifier electricity connection performance, reduce contact resistance, reduce the loss among the signal transmission process, infrared detection performance of infrared microbridge detector has been promoted, and still surround solid structure 601's side through setting up adhesion layer 603, can increase adhesion layer 603 and solid structure 601's area of contact, be equivalent to the transmission path of widening the signal of telecommunication, the transmission resistance of columnar structure 6 has been reduced, thereby further reduced the signal transmission loss, infrared detection performance of infrared microbridge detector has been promoted. In addition, the material forming the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum, or tantalum nitride, and the adhesion layer 603 is formed by using at least one of the four conductive materials, so that the requirement of enhancing the mechanical and electrical connection performance between the supporting base 42 and the columnar structure 6 by using the adhesion layer 603 can be met, and the requirement of preparing the adhesion layer 603 by using a CMOS process, that is, the requirement of integrating the CMOS process, can be met.

The side wall of the adhesion layer 603 on the outermost periphery in the columnar structure 6, which is far away from the solid structure 601, is further coated with the dielectric layer 604, the adhesion layer 603 is utilized to enhance the connection performance between the columnar structure 6 and the supporting base 42, and meanwhile, the dielectric layer 604 coating the side wall of the adhesion layer 603 plays a role in insulation protection, and the dielectric layer 604 can be utilized to play a role in auxiliary support of the columnar structure 6, so that the structural stability and the infrared detection performance of the infrared microbridge detector are improved. Similarly, the material forming the dielectric layer 604 may include at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium oxide, silicon, germanium, silicon germanium oxide, graphene, copper, or platinum, which are not corroded by the gas phase hydrogen fluoride, carbon tetrafluoride, or trifluoromethane, and thus the dielectric layer 604 covering the adhesion layer 603 is not corroded when the sacrificial layer is corroded by the gas phase hydrogen fluoride, carbon tetrafluoride, and trifluoromethane in the subsequent process steps. For example, as shown in fig. 21, the adhesion layer 603 covering the solid structure 601 may be provided as the electrode layer 14 in the suspended microbridge structure 40, the dielectric layer 604 covering the adhesion layer 603 is the first dielectric layer 13 in the suspended microbridge structure 40, and the adhesion layer 603 covering the solid structure 601 and/or the dielectric layer 604 covering the adhesion layer 603 may also be a separately manufactured film layer, or the dielectric layer covering the adhesion layer 603 may also be provided as the second dielectric layer 15 or the heat-sensitive dielectric layer 12 in the suspended microbridge structure 40.

Fig. 22 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. Different from the infrared microbridge detector with the structure shown in the above embodiment, in the infrared microbridge detector with the structure shown in fig. 22, the position of the surface of the suspended microbridge structure 40 close to the CMOS measurement circuit system 1, which corresponds to the position of the columnar structure 6, is in a step shape, that is, the surface of the suspended microbridge structure 40 not in contact with the columnar structure 6 is higher than the surface of the suspended microbridge structure 40 in contact with the columnar structure 6. Specifically, the sacrificial layer needs to be planarized by a CMP (Chemical Mechanical Polishing) process, and if the surface of the suspended microbridge structure 40, which is not in contact with the pillar-shaped structure 6, is flush with the surface of the suspended microbridge structure 40, which is in contact with the pillar-shaped structure 6, a Polishing termination interface of the CMP process of the sacrificial layer is flush with the upper surface of the pillar-shaped structure 6, and since Chemical reagents and grinding process parameters in the CMP process are not easy to be adjusted and controlled, the surface of the sacrificial layer in the middle region of the infrared microbridge detector is lower than the surface of the sacrificial layer in other regions, that is, a recessed region is formed in the middle of the sacrificial layer, which affects the planarization degree of a film layer subsequently prepared by the infrared microbridge detector. The embodiment of the disclosure can utilize the sacrificial layer to form a stepped structure corresponding to the suspended micro-bridge structure 40, the surface of the suspended micro-bridge structure 40, which is not in contact with the columnar structure 6, is higher than the surface of the suspended micro-bridge structure 40, which is in contact with the columnar structure 6, and the polishing termination interface of the CMP process corresponding to the sacrificial layer is higher than the upper surface of the columnar structure 6, so that the depression degree of the middle area of the sacrificial layer can be effectively reduced, and the planarization degree of the whole infrared micro-bridge detector is optimized.

Optionally, in combination with fig. 3, 12, 20, 21 and 22, the infrared microbridge detector may further include a reinforcing structure 16, where the reinforcing structure 16 is disposed corresponding to the position of the columnar structure 61, the reinforcing structure 16 is used to enhance the connection stability between the columnar structure 6 and the beam structure 11, and the reinforcing structure 16 includes a weighted block structure. Specifically, the arrangement of the reinforcing structure 16 can effectively enhance the mechanical stability between the columnar structure 6 and the beam structure 11, thereby improving the structural stability of the infrared micro-bridge detector pixel and the infrared micro-bridge detector including the infrared micro-bridge detector pixel.

Exemplarily, as shown in fig. 12, a weighted block structure may be provided on a side of the beam structure 11 away from the CMOS measurement circuitry 1 and the weighted block structure is provided in contact with the beam structure 11. Specifically, the weighting block structure is arranged on one side of the beam structure 11 far away from the CMOS measurement circuit system 1 and is in contact with the beam structure 11, which is equivalent to adding a cover plate at the position of the beam structure 11 corresponding to the columnar structure 6, and pressing the beam structure by using the self weight of the reinforcing structure 16, so as to enhance the mechanical strength between the beam structure 11 and the columnar structure 6 and improve the structural stability of the infrared micro-bridge detector.

Illustratively, with reference to fig. 3, 20, 21 and 22, the beam structure 11 may also be provided with a through hole formed at a position corresponding to the position of the columnar structure 6, the through hole exposes at least a portion of the columnar structure 6, the weighted block structure includes a first portion filling the through hole and a second portion located outside the through hole, and an orthographic projection of the second portion covers an orthographic projection of the first portion. Specifically, a hollow-out area is formed at a position of the beam structure 11 corresponding to the columnar structure 6, that is, a through hole is formed, a second part of the weighting block structure outside the through hole and a first part of the weighting block structure inside the through hole are integrally formed, the first part is filled or embedded into the through hole and is in contact with the columnar structure 6, an orthographic projection of the second part covers an orthographic projection of the first part, that is, the area of the second part is larger than that of the first part. In the infrared microbridge detector pixel, the reinforced structure 16 is equivalent to a rivet structure formed by a first part and a second part, the bottom surface of the first part is contacted with the top surface of the columnar structure, the side surface of the first part is also contacted with the side surface of a hollow area formed by the beam structure, and the lower surface of the second part is contacted with the outer surface of the through hole. Therefore, when the self gravity of the reinforcing structure 16 is utilized to press the beam structure 11, the contact area between the reinforcing structure 16 and the columnar structure 6 and the beam structure 11 is increased, the mechanical strength between the beam structure 11 and the columnar structure 6 is further increased, and the structural stability of the infrared micro-bridge detector is improved.

Illustratively, the material that may be provided to form the weighted mass structure includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon oxide, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium tungsten alloy, nickel chromium alloy, nickel platinum alloy, or nickel silicon alloy. Specifically, the reinforcing structure 16 may be a single-layer structure deposited by a medium or a metal, or may be a multi-layer structure formed by stacking two, three, or more single-layer structures, where amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, and nickel-silicon alloy are not corroded by gas-phase hydrogen fluoride, carbon tetrafluoride, or trifluoromethane, so that the reinforcing structure 16 is not affected in a process of corroding the sacrificial layer to release the sacrificial layer by using gas-phase hydrogen fluoride, carbon tetrafluoride, or trifluoromethane, thereby ensuring that the mechanical strength of the joint between the beam structure 11 and the columnar structure 6 can be enhanced by the reinforcing structure 16, and preventing the beam structure 11 and the columnar structure 6 from falling due to loose joint, thereby enhancing the structural stability of the infrared micro-bridge detector. In addition, when the material constituting the reinforcing structure 16 includes silicon oxide, since silicon oxide may be corroded by gas phase hydrogen fluoride, carbon tetrafluoride, or trifluoromethane, it is preferable that the reinforcing structure 16 is disposed in the closed space surrounded by the first dielectric layer 13 and the second dielectric layer 15.

Optionally, in combination with fig. 2, 7, 10 and 11, the pillar structure 6 may be configured to include at least one layer of hollow pillar structure, and fig. 2, 7, 10 and 11 exemplarily configure the pillar structure 6 to include one layer of hollow pillar structure, at least one electrode layer 14 is disposed in the hollow pillar structure, and the electrode layer 14 in the hollow pillar structure is electrically connected to the electrode layer 14 in the suspended microbridge structure 40 and the supporting base 42, so as to ensure that the electrical signal generated by the suspended microbridge structure 40 is transmitted to the CMOS measurement circuit system 1. Fig. 2, fig. 7, fig. 10, and fig. 11 exemplarily set up that an electrode layer 14 and dielectric layers respectively located at two sides of the electrode layer 14 are disposed in a hollow columnar structure, the dielectric layers at two sides implement effective protection for the electrode layer 14, prevent the electrode layer 14 from being oxidized or corroded, and optimize the electrical transmission characteristics of the infrared micro-bridge detector, exemplarily, the dielectric layer located below the electrode layer 14 in the columnar structure 6 may be, for example, a first dielectric layer 13, the dielectric layer located above the electrode layer 14 may be, for example, a second dielectric layer 15, and the dielectric layers at two sides of the electrode layer 14 may also be separately manufactured film layers. In addition, the columnar structure 6 may be provided, and no dielectric layer is arranged above and/or below the electrode layer 14, that is, only a dielectric layer is arranged below the electrode layer 14 in the hollow columnar structure, or only a dielectric layer is arranged above the electrode layer 14, or only the electrode layer 14 is arranged in the hollow columnar structure, and no dielectric layer is wrapped outside the electrode layer 14.

Optionally, with reference to fig. 2, fig. 7, fig. 10 and fig. 11, especially fig. 11, the infrared microbridge detector with hollow columnar structure may further include a reinforcing structure 16, where the reinforcing structure 16 is disposed corresponding to the position of the columnar structure 6, and the reinforcing structure 16 is used to enhance the connection stability between the columnar structure 6 and the suspended microbridge structure 40 and between the columnar structure 6 and the reflective layer 4, that is, enhance the connection stability between the columnar structure 6 and the supporting base 42. Illustratively, the reinforcing structure 16 may be located on a side of the electrode layer 14 away from the CMOS measurement circuitry 1, and when the electrode layer 14 is not covered by a dielectric layer, the reinforcing structure 16 is located above the electrode layer 14 and is in contact with the electrode layer 14, and at this time, the reinforcing structure 16 may form a hollow structure or a solid structure in the hollow columnar structure. When the electrode layer 14 is covered with a dielectric layer, for example, in fig. 11, when the electrode layer 14 is covered with the second dielectric layer 15, the reinforcing structure 16 may be located above the second dielectric layer 15 and disposed in contact with the second dielectric layer 15 as shown in fig. 11, at this time, the reinforcing structure 16 may form a hollow structure in the hollow columnar structure as shown in fig. 11, and the reinforcing structure 16 may also form a solid structure in the hollow columnar structure, that is, the reinforcing structure 16 may also fill an inner space surrounded by the second dielectric layer 15. Alternatively, as shown in fig. 23, the reinforcing structure 16 may be disposed above the electrode layer 14 and the reinforcing structure 16 may be disposed in contact with the electrode layer 14, that is, the reinforcing structure 16 is located between the electrode layer 14 and the second dielectric layer 15, where the reinforcing structure 16 forms a hollow structure within the hollow columnar structure.

Fig. 24 is a schematic cross-sectional structure diagram of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. In the infrared microbridge detector with the structure shown in fig. 24, the reinforcing structure 16 may also be disposed on a side of the electrode layer 14 adjacent to the CMOS measurement circuit system 1, and when a dielectric layer is disposed below the electrode layer 14, for example, the first dielectric layer 13, the reinforcing structure 16 may be disposed between the electrode layer 14 and the first dielectric layer 13, and the reinforcing structure 16 is disposed in contact with the electrode layer 14.

With reference to fig. 11, 23, and 24, no matter the reinforcing structure 16 is located on one side of the electrode layer 14 far from the CMOS measurement circuit system 1, or the reinforcing structure 16 is located on one side of the electrode layer 14 close to the CMOS measurement circuit system 1, the reinforcing structure 16 covers the connection position of the columnar structure 6 and the suspended microbridge structure 40, which is equivalent to that a negative weight is added at the connection position of the columnar structure 6 and the suspended microbridge structure 40, and the connection stability between the columnar structure 6 and the suspended microbridge structure 40 is enhanced by the reinforcing structure 16. In addition, the reinforcing structure 16 also covers at least part of the connecting position of the columnar structure 6 and the supporting base 42, which is equivalent to that a negative weight is added at the connecting position of the columnar structure 6 and the supporting base 42, so that the connecting stability between the columnar structure 6 and the supporting base 42 is enhanced by using the reinforcing structure 16, the electrical connection characteristic of the whole infrared micro-bridge detector is further optimized, and the infrared detection performance of the infrared micro-bridge detector is optimized. For example, the reinforcing structure 16 described in the above embodiments may be a metal structure or a non-metal structure, which is not specifically limited in this embodiment of the disclosure, and it is sufficient to ensure that the arrangement of the reinforcing structure 16 does not affect the electrical connection relationship in the infrared microbridge detector.

Optionally, in conjunction with fig. 1 to 24, at least one patterned metal interconnection layer may be disposed between the reflective layer 4 and the suspended microbridge structure 40, the patterned metal interconnection layer is located above or below the hermetic release barrier layer 3 and is electrically insulated from the reflective layer 4, and the patterned metal interconnection layer is used to adjust a resonance mode of the infrared microbridge detector. Specifically, a Bragg reflector (Bragg reflector) is an optical device for enhancing reflection of light with different wavelengths by utilizing constructive interference of reflected light with different interfaces, and is composed of a plurality of 1/4 wavelength reflectors to achieve efficient reflection of incident light with a plurality of wavelengths.

Illustratively, at least one patterned metal interconnect layer may be disposed on a side of the hermetic release barrier 3 away from the CMOS measurement circuitry 1 and/or at least one patterned metal interconnect layer may be disposed on a side of the hermetic release barrier 3 adjacent to the CMOS measurement circuitry 1. Illustratively, the patterned metal interconnection layer may include a plurality of metal repeating units arranged in an array, each metal repeating unit may include at least one of an L-shaped patterned structure, a circular structure, a sector-shaped structure, an elliptical structure, a circular ring structure, an open ring structure, or a polygonal structure arranged at two opposite corners, or the patterned metal interconnection layer may include a plurality of patterned hollow structures arranged in an array, and the patterned hollow structures may include at least one of a circular hollow structure, an open ring-shaped hollow structure, or a polygonal hollow structure.

Alternatively, it may be provided that the beam structure 11 and the absorber plate 10 are electrically connected at least at two ends, the CMOS infrared sensing structure 2 includes at least two columnar structures 6 and at least two support bases 42, and the electrode layer 14 includes at least two electrode terminals. Specifically, as shown in fig. 1, the beam structures 11 are electrically connected to two ends of the absorber plate 10, each beam structure 11 is electrically connected to one end of the absorber plate 10, the CMOS infrared sensing structure 2 includes two pillar structures 6, the electrode layer 14 includes at least two electrode terminals, at least a portion of the electrode terminals transmit positive electrical signals, at least a portion of the electrode terminals transmit negative electrical signals, and the signals are transmitted to the supporting base 42 through the corresponding beam structures 11 and pillar structures 6.

Fig. 25 is a schematic perspective view of another infrared microbridge detector pixel provided in the embodiment of the present disclosure. As shown in fig. 25, it is also possible to provide beam structures 11 electrically connected to four ends of the absorption plate 10, each beam structure 11 electrically connected to two ends of the absorption plate 10, the CMOS infrared sensing structure 2 includes four pillar structures 6, one beam structure 11 connecting two pillar structures 6, and the beam structures 11 may adopt a thermally symmetric structure, which is well known to those skilled in the art and will not be discussed herein. It should be noted that, in the embodiment of the present disclosure, the number of the connecting ends of the beam structure 11 and the absorbing plate 10 is not particularly limited, and it is sufficient that the beam structure 11 and the electrode terminal are respectively present, and the beam structure 11 is used for transmitting the electrical signal output by the corresponding electrode terminal.

Alternatively, the infrared microbridge detector may be configured based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm, or 350nm CMOS process, which characterizes process nodes of the integrated circuit, i.e., features during the processing of the integrated circuit.

Alternatively, the metal wiring material constituting the metal interconnection layer in the infrared micro-bridge detector may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt, and for example, the material constituting the reflective layer 4 may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt. In addition, the CMOS measuring circuit system 1 and the CMOS infrared sensing structure 2 are both prepared by using a CMOS process, the CMOS infrared sensing structure 2 is directly prepared on the CMOS measuring circuit system 1, the radial side length of the columnar structure 6 can be more than or equal to 0.5um and less than or equal to 3um, the width of the beam structure 11, namely the width of a single line in the beam structure 11 is less than or equal to 0.3um, and the height of the resonant cavity is less than or equal to 2.5um.

In addition, the embodiment of the present disclosure does not provide schematic diagrams of infrared microbridge detectors with all structures that belong to the protection scope of the embodiment of the present disclosure, and the protection scope of the embodiment of the present disclosure is not limited, and different features disclosed in the embodiment of the present disclosure may be combined arbitrarily, for example, whether there is a reinforcing structure in the infrared microbridge detector, both belong to the protection scope of the embodiment of the present disclosure, and any combination of columnar structures with different structures also belongs to the protection scope of the embodiment of the present disclosure.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.

The foregoing are merely exemplary embodiments of the present disclosure, which will enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An infrared microbridge detector based on a CMOS process is characterized by comprising:

the CMOS measurement circuit system comprises at least one layer of closed release isolation layer above the CMOS measurement circuit system, wherein the closed release isolation layer is used for protecting the CMOS measurement circuit system from being influenced by a process in the release etching process of manufacturing the CMOS infrared sensing structure;

the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (remote description language) process, wherein the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the two metal interconnection layers comprise a reflecting layer and an electrode layer, and the two dielectric layers comprise a sacrificial layer and a heat-sensitive dielectric layer; the thermal sensitive medium layer is used for converting temperature change corresponding to infrared radiation absorbed by the thermal sensitive medium layer into resistance change, and further converting an infrared target signal into a signal capable of realizing electric reading through the CMOS measuring circuit system;

the surface of the suspended micro-bridge structure close to the CMOS measuring circuit system is in a step shape corresponding to the position of the columnar structure, the surface of the suspended micro-bridge structure, which is not in contact with the columnar structure, is higher than the surface of the suspended micro-bridge structure, which is in contact with the columnar structure, and the columnar structure is a solid columnar structure; the surface of the sacrificial layer, which is in contact with the first part of the suspended micro-bridge structure, is higher than the surface of the columnar structure, which is far away from the CMOS measuring circuit system, and the first part is the part of the suspended micro-bridge structure, which is not in contact with the columnar structure;

2. The CMOS process based infrared microbridge detector of claim 1, wherein the CMOS infrared sensing structure is fabricated on an upper layer or a same layer of a metal interconnect layer of the CMOS measurement circuitry.

3. The CMOS process-based infrared microbridge detector according to claim 1, wherein the sacrificial layer is used to make the CMOS infrared sensing structure form a hollow structure, the material constituting the sacrificial layer is silicon oxide, and the sacrificial layer is etched by a post-CMOS process.

4. The CMOS process-based infrared microbridge detector according to claim 1, wherein the absorption plate is configured to absorb the infrared target signal and convert the infrared target signal into an electrical signal, the beam structure and the pillar structure are configured to transmit the electrical signal and support and connect the absorption plate, the reflective layer is configured to reflect the infrared signal and form the resonant cavity with the heat sensitive dielectric layer, the reflective layer comprises at least one metal interconnection layer, and the pillar structure connects the beam structure and the CMOS measurement circuitry using the metal interconnection process and the via process;

the beam structure comprises the electrode layer, or the beam structure comprises a first dielectric layer and the electrode layer, or the beam structure comprises the electrode layer and a second dielectric layer, or the beam structure comprises the electrode layer and the heat sensitive dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer and the heat sensitive dielectric layer, or the beam structure comprises the electrode layer, the heat sensitive dielectric layer and a second dielectric layer, or the beam structure comprises a first dielectric layer, the electrode layer, the heat sensitive dielectric layer and a second dielectric layer, the absorption plate comprises the electrode layer and the heat sensitive dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer and the heat sensitive dielectric layer, or the absorption plate comprises the electrode layer, the heat sensitive dielectric layer and the second dielectric layer, or the absorption plate comprises the first dielectric layer, the electrode layer, the heat sensitive dielectric layer and the second dielectric layer; the material for forming the first dielectric layer comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, the material for forming the second dielectric layer comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon, and the material for forming the heat-sensitive dielectric layer comprises at least one of materials with the temperature coefficient of resistance larger than a set value, wherein the materials are prepared from titanium oxide, vanadium oxide, silicon, germanium, silicon germanium oxide, graphene, barium strontium titanate thin film, copper or platinum; alternatively, the first and second electrodes may be,

5. The CMOS process-based infrared microbridge detector according to claim 4, wherein the suspended microbridge structure comprises a first dielectric layer and a second dielectric layer, the infrared microbridge detector further comprises a metamaterial structure and/or a polarization structure, the metamaterial structure or the polarization structure is at least one metal interconnection layer on a side of the first dielectric layer close to the CMOS measurement circuitry, or at least one metal interconnection layer on a side of the second dielectric layer far away from the CMOS measurement circuitry, or at least one metal interconnection layer between the first dielectric layer and the second dielectric layer and electrically insulated from the electrode layer, or the electrode layer is used as a metamaterial structure layer or a polarization structure layer.

6. The CMOS process-based infrared microbridge detector of claim 1, wherein the columnar structures comprise at least one layer of solid columnar structures, the solid columnar structures comprising solid structures;

the side wall of the solid structure is arranged in contact with the sacrificial layer, and the material for forming the solid structure comprises at least one of tungsten, copper or aluminum; alternatively, the first and second electrodes may be,

the side wall of the solid structure is coated with at least one dielectric layer, the solid structure is arranged in contact with the dielectric layer, the material for forming the solid structure comprises at least one of tungsten, copper or aluminum, and the material for forming the dielectric layer comprises at least one of silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, silicon, germanium, silicon germanium oxide, graphene, copper or platinum; alternatively, the first and second liquid crystal display panels may be,

the utility model discloses a CMOS measurement circuit system, including solid structure, CMOS measurement circuit system, columnar structure, solid structure's lateral wall and solid structure, the surface cladding of solid structure's the surface has at least one deck adhesion layer, outermost periphery in the columnar structure the adhesion layer is kept away from solid structure's lateral wall cladding has the dielectric layer, constitutes solid structure's material includes at least one in tungsten, copper or the aluminium, constitutes the material of adhesion layer includes at least one in titanium, titanium nitride, tantalum or the tantalum nitride, constitutes the material of dielectric layer includes at least one in silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminium oxide, titanium oxide, vanadium oxide, silicon, germanium silicon, germanium oxygen silicon, graphite alkene, copper or platinum.

7. The CMOS process-based infrared micro-bridge detector of claim 6, further comprising a reinforcing structure, wherein the reinforcing structure is disposed corresponding to the position of the columnar structure, the reinforcing structure is used for enhancing the connection stability between the columnar structure and the beam structure, and the reinforcing structure comprises a weighted block structure;

8. The CMOS process based infrared microbridge detector according to claim 1, wherein the columnar structures comprise at least one layer of hollow columnar structures, and at least the electrode layer is disposed in the hollow columnar structures.

9. The CMOS process-based infrared micro-bridge detector according to claim 8, further comprising a reinforcing structure, wherein the reinforcing structure is disposed corresponding to the position of the columnar structure, and is used for enhancing connection stability between the columnar structure and the suspended micro-bridge structure and between the columnar structure and the reflective layer;

the reinforcing structure is positioned on one side of the electrode layer far away from the CMOS measuring circuit system; or, the reinforcing structure is positioned on one side of the electrode layer close to the CMOS measuring circuit system.

10. The CMOS process based infrared microbridge detector of claim 1, wherein the hermetic release barrier is located at an interface between the CMOS measurement circuitry and the CMOS infrared sensing structure and/or in the CMOS infrared sensing structure;

the closed release isolation layer at least comprises a dielectric layer, and the dielectric material forming the closed release isolation layer comprises at least one of silicon carbide, silicon carbonitride, silicon nitride, silicon, germanium, silicon-germanium alloy, amorphous carbon or aluminum oxide.

11. The CMOS process-based infrared micro-bridge detector according to claim 1, wherein at least one patterned metal interconnection layer is disposed between the reflective layer and the suspended micro-bridge structure, the patterned metal interconnection layer is located above or below the hermetic release barrier layer and is electrically insulated from the reflective layer, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared micro-bridge detector.

12. The CMOS process-based infrared microbridge detector of claim 1, wherein the infrared microbridge detector is based on 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm, or 350nm CMOS process;