ZA893923B - Manufacturing electronic devices - Google Patents

Manufacturing electronic devices

Info

Publication number
ZA893923B
ZA893923B ZA893923A ZA893923A ZA893923B ZA 893923 B ZA893923 B ZA 893923B ZA 893923 A ZA893923 A ZA 893923A ZA 893923 A ZA893923 A ZA 893923A ZA 893923 B ZA893923 B ZA 893923B
Authority
ZA
South Africa
Prior art keywords
electronic devices
manufacturing electronic
manufacturing
devices
electronic
Prior art date
Application number
ZA893923A
Other languages
English (en)
Inventor
Barbara Lynn Jones
Lynn Jones Barbara
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Publication of ZA893923B publication Critical patent/ZA893923B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
ZA893923A 1988-05-24 1989-05-24 Manufacturing electronic devices ZA893923B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888812235A GB8812235D0 (en) 1988-05-24 1988-05-24 Manufacturing electronic devices

Publications (1)

Publication Number Publication Date
ZA893923B true ZA893923B (en) 1990-02-28

Family

ID=10637416

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA893923A ZA893923B (en) 1988-05-24 1989-05-24 Manufacturing electronic devices

Country Status (4)

Country Link
US (1) US5114871A (fr)
EP (1) EP0343962A3 (fr)
GB (1) GB8812235D0 (fr)
ZA (1) ZA893923B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
US5155559A (en) * 1991-07-25 1992-10-13 North Carolina State University High temperature refractory silicide rectifying contact
US5328855A (en) * 1991-07-25 1994-07-12 Matsushita Electric Industrial Co., Ltd. Formation of semiconductor diamond
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile
JPH0799318A (ja) * 1993-09-28 1995-04-11 Kobe Steel Ltd ダイヤモンド薄膜電界効果トランジスタ及びその製造方法
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
GB9817745D0 (en) * 1998-08-15 1998-10-14 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
FR2868209B1 (fr) 2004-03-25 2006-06-16 Commissariat Energie Atomique Transistor a effet de champ a canal en carbone diamant
US7078723B2 (en) * 2004-04-06 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with depth adjustable sill

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
DE2658400A1 (de) * 1976-12-23 1978-06-29 Ibm Deutschland Verfahren zur herstellung einer negativen maske auf einem substrat
US4223088A (en) * 1979-01-26 1980-09-16 Xerox Corporation Method of forming defined conductive patterns in a thin gold film
US4328298A (en) * 1979-06-27 1982-05-04 The Perkin-Elmer Corporation Process for manufacturing lithography masks
JPS5621332A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
US4288282A (en) * 1979-09-28 1981-09-08 Hewlett-Packard Company Method for producing a metallic pattern upon a substrate
US4534103A (en) * 1980-02-07 1985-08-13 At&T Bell Laboratories Method of making self-aligned metal gate field effect transistors
US4551416A (en) * 1981-05-22 1985-11-05 At&T Bell Laboratories Process for preparing semiconductors using photosensitive bodies
JPS58119669A (ja) * 1982-01-08 1983-07-16 Seiko Epson Corp 薄膜半導体装置の製造方法
JPS58135679A (ja) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
JPS60173712A (ja) * 1984-02-17 1985-09-07 Fuji Photo Film Co Ltd 薄膜パタ−ン付設基板の表面平担化方法
US4637129A (en) * 1984-07-30 1987-01-20 At&T Bell Laboratories Selective area III-V growth and lift-off using tungsten patterning
US4665008A (en) * 1984-11-26 1987-05-12 Fuji Electric Co., Ltd. Method for fabricating thin-film image sensing devices
US4621042A (en) * 1985-08-16 1986-11-04 Rca Corporation Absorptive planarizing layer for optical lithography
US4670097A (en) * 1985-12-23 1987-06-02 Gte Products Corporation Method for patterning transparent layers on a transparent substrate
EP0236936A3 (fr) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Procédé pour éliminer les courts-circuits pendant la production de composants électriques, de préférence pour des cellules solaires au silicium amorphe
US4678542A (en) * 1986-07-25 1987-07-07 Energy Conversion Devices, Inc. Self-alignment process for thin film diode array fabrication
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Also Published As

Publication number Publication date
EP0343962A3 (fr) 1990-09-19
GB8812235D0 (en) 1988-06-29
EP0343962A2 (fr) 1989-11-29
US5114871A (en) 1992-05-19

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