ZA838817B - A thyristor structure with intrinsic switch-on and application thereof to the constructions of a bidirectional device - Google Patents
A thyristor structure with intrinsic switch-on and application thereof to the constructions of a bidirectional deviceInfo
- Publication number
- ZA838817B ZA838817B ZA838817A ZA838817A ZA838817B ZA 838817 B ZA838817 B ZA 838817B ZA 838817 A ZA838817 A ZA 838817A ZA 838817 A ZA838817 A ZA 838817A ZA 838817 B ZA838817 B ZA 838817B
- Authority
- ZA
- South Africa
- Prior art keywords
- constructions
- application
- thyristor structure
- bidirectional device
- intrinsic switch
- Prior art date
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
- 238000010276 construction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8219728A FR2536909A1 (fr) | 1982-11-25 | 1982-11-25 | Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA838817B true ZA838817B (en) | 1984-07-25 |
Family
ID=9279493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA838817A ZA838817B (en) | 1982-11-25 | 1983-11-25 | A thyristor structure with intrinsic switch-on and application thereof to the constructions of a bidirectional device |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0110777A1 (es) |
| JP (1) | JPS59108353A (es) |
| KR (1) | KR870000152B1 (es) |
| BR (1) | BR8306509A (es) |
| DK (1) | DK541383A (es) |
| ES (1) | ES527571A0 (es) |
| FR (1) | FR2536909A1 (es) |
| IN (1) | IN159925B (es) |
| ZA (1) | ZA838817B (es) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2566582B1 (fr) * | 1984-06-22 | 1987-02-20 | Silicium Semiconducteur Ssc | Dispositif bidirectionnel de protection declenche par avalanche |
| FR2566963B1 (fr) * | 1984-06-29 | 1987-03-06 | Silicium Semiconducteur Ssc | Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
| FR2579007B1 (fr) * | 1985-03-12 | 1988-09-09 | Telemecanique Electrique | Interrupteur hybride |
| FR2582882A1 (fr) * | 1985-05-30 | 1986-12-05 | Telemecanique Electrique | Relais statique comportant des thyristors normalement conducteurs. |
| CN107258018B (zh) * | 2014-12-17 | 2020-08-14 | Abb瑞士股份有限公司 | 双向功率半导体器件 |
| JP7432098B2 (ja) * | 2020-03-31 | 2024-02-16 | ヒタチ・エナジー・リミテッド | サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4060825A (en) * | 1976-02-09 | 1977-11-29 | Westinghouse Electric Corporation | High speed high power two terminal solid state switch fired by dV/dt |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945391A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem abschaltbaren emitter-kurzschluss |
-
1982
- 1982-11-25 FR FR8219728A patent/FR2536909A1/fr active Granted
-
1983
- 1983-11-23 EP EP83402259A patent/EP0110777A1/fr not_active Withdrawn
- 1983-11-23 KR KR1019830005520A patent/KR870000152B1/ko active IP Right Grant
- 1983-11-25 DK DK541383A patent/DK541383A/da not_active Application Discontinuation
- 1983-11-25 ZA ZA838817A patent/ZA838817B/xx unknown
- 1983-11-25 JP JP58221950A patent/JPS59108353A/ja active Pending
- 1983-11-25 BR BR8306509A patent/BR8306509A/pt unknown
- 1983-11-25 ES ES527571A patent/ES527571A0/es active Granted
- 1983-11-29 IN IN796/DEL/83A patent/IN159925B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BR8306509A (pt) | 1984-07-03 |
| DK541383D0 (da) | 1983-11-25 |
| EP0110777A1 (fr) | 1984-06-13 |
| FR2536909A1 (fr) | 1984-06-01 |
| KR870000152B1 (ko) | 1987-02-12 |
| JPS59108353A (ja) | 1984-06-22 |
| ES8501923A1 (es) | 1984-12-01 |
| IN159925B (es) | 1987-06-13 |
| FR2536909B1 (es) | 1985-03-29 |
| KR840006874A (ko) | 1984-12-03 |
| DK541383A (da) | 1984-05-26 |
| ES527571A0 (es) | 1984-12-01 |
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