ZA818803B - Light-sensitive mixture comprising a naphtoquinonediazide-sulfonic acid ester and process for preparing said ester - Google Patents

Light-sensitive mixture comprising a naphtoquinonediazide-sulfonic acid ester and process for preparing said ester

Info

Publication number
ZA818803B
ZA818803B ZA818803A ZA818803A ZA818803B ZA 818803 B ZA818803 B ZA 818803B ZA 818803 A ZA818803 A ZA 818803A ZA 818803 A ZA818803 A ZA 818803A ZA 818803 B ZA818803 B ZA 818803B
Authority
ZA
South Africa
Prior art keywords
ester
light
mixture
acid ester
naphtoquinonediazide
Prior art date
Application number
ZA818803A
Other languages
English (en)
Inventor
F Erdmann
U Simon
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6122201&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ZA818803(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of ZA818803B publication Critical patent/ZA818803B/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
ZA818803A 1981-01-03 1981-12-21 Light-sensitive mixture comprising a naphtoquinonediazide-sulfonic acid ester and process for preparing said ester ZA818803B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813100077 DE3100077A1 (de) 1981-01-03 1981-01-03 Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters

Publications (1)

Publication Number Publication Date
ZA818803B true ZA818803B (en) 1982-11-24

Family

ID=6122201

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA818803A ZA818803B (en) 1981-01-03 1981-12-21 Light-sensitive mixture comprising a naphtoquinonediazide-sulfonic acid ester and process for preparing said ester

Country Status (9)

Country Link
US (2) US4424270A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0055814B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS57135947A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE18469T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU546108B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR8108552A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1186439A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3100077A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ZA (1) ZA818803B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246106A1 (de) * 1982-12-13 1984-06-14 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPS60121445A (ja) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感光性樹脂組成物
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
JPH0654381B2 (ja) * 1985-12-24 1994-07-20 日本合成ゴム株式会社 集積回路作製用ポジ型レジスト
DE3686032T2 (de) * 1985-12-27 1993-02-18 Japan Synthetic Rubber Co Ltd Strahlungsempfindliche positiv arbeitende kunststoffzusammensetzung.
US5162510A (en) * 1986-05-02 1992-11-10 Hoechst Celanese Corporation Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4902785A (en) * 1986-05-02 1990-02-20 Hoechst Celanese Corporation Phenolic photosensitizers containing quinone diazide and acidic halide substituents
US5035976A (en) * 1986-05-02 1991-07-30 Hoechst Celanese Corporation Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
DE3629122A1 (de) * 1986-08-27 1988-03-10 Hoechst Ag Verfahren zur herstellung eines o-naphthochinondiazidsulfonsaeureesters und diesen enthaltendes lichtempfindliches gemisch
JPS63178228A (ja) * 1987-01-20 1988-07-22 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
DE3718416A1 (de) * 1987-06-02 1988-12-15 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
DE3729034A1 (de) * 1987-08-31 1989-03-09 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden und hiermit hergestelltes lichtempfindliches kopiermaterial
JP2568867B2 (ja) * 1987-12-04 1997-01-08 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2706978B2 (ja) * 1988-05-07 1998-01-28 住友化学工業株式会社 ポジ型レジスト組成物
JP2629814B2 (ja) * 1988-05-09 1997-07-16 日本合成ゴム株式会社 ポジ型感放射線性樹脂組成物
US5239122A (en) * 1988-05-31 1993-08-24 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5177172A (en) * 1988-05-31 1993-01-05 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5002851A (en) * 1988-05-31 1991-03-26 Olin Hunt Specialty Products, Inc. Light sensitive composition with o-quinone diazide and phenolic novolak resin made using methylol substituted trihydroxybenzophenone as reactant
US5254440A (en) * 1988-05-31 1993-10-19 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions and processes of forming resist images
DE3822522A1 (de) * 1988-07-04 1990-03-22 Hoechst Ag 1,2-naphthochinon-2-diazid-sulfonsaeureamide und lichtempfindliche gemische, die diese enthalten
JP2800186B2 (ja) * 1988-07-07 1998-09-21 住友化学工業株式会社 集積回路製作用ポジ型レジスト組成物の製造方法
JP2636348B2 (ja) * 1988-07-20 1997-07-30 住友化学工業株式会社 ポジ型レジスト用組成物
DE68927639T2 (de) * 1988-08-10 1997-04-24 Hoechst Celanese Corp Lichtempfindliche novolak-harze
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
DE3836586A1 (de) * 1988-10-27 1990-05-03 Ciba Geigy Ag Phlegmatisierte chinondiazid-verbindungen
JPH0816779B2 (ja) * 1988-12-02 1996-02-21 富士写真フイルム株式会社 新規な感光性化合物及びそれを用いたフオトレジストの形成方法
JP2697039B2 (ja) * 1988-12-06 1998-01-14 住友化学工業株式会社 ポジ型レジスト組成物の製造方法
US5200293A (en) * 1989-02-23 1993-04-06 Ciba-Geigy Corporation Photoresist composition containing specific amounts of a naphthoquinone diazide sulfonyl ester of tetrahydroxy diphenyl sulfide and a polyhydroxy compound
EP0384892A1 (de) * 1989-02-23 1990-08-29 Ciba-Geigy Ag Photoresist-Zusammensetzungen
JPH02245754A (ja) * 1989-03-17 1990-10-01 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP2700918B2 (ja) * 1989-04-26 1998-01-21 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH02296247A (ja) * 1989-05-11 1990-12-06 Nippon Zeon Co Ltd ボジ型レジスト組成物
US5196289A (en) * 1989-09-07 1993-03-23 Ocg Microelectronic Materials, Inc. Selected block phenolic oligomers and their use in radiation-sensitive resist compositions
US5234795A (en) * 1989-09-07 1993-08-10 Ocg Microelectronic Materials, Inc. Process of developing an image-wise exposed resist-coated substrate
US5232819A (en) * 1989-09-07 1993-08-03 Ocg Microelectronic Materials, Inc. Selected block phenolic oligomers and their use in phenolic resin compositions and in radiation-sensitive resist compositions
WO1991004512A1 (en) * 1989-09-07 1991-04-04 Ocg Microelectronic Materials, Inc. Selected block copolymer novolak binder resins and their use in radiation-sensitive compositions
US5188921A (en) * 1989-09-07 1993-02-23 Ocg Microelectronic Materials, Inc. Selected block copolymer novolak binder resins in radiation-sensitive resist compositions
US5238775A (en) * 1990-02-20 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
DE69129955T2 (de) * 1990-05-02 1998-12-24 Mitsubishi Chemical Corp., Tokio/Tokyo Photolackzusammensetzung
US5145763A (en) * 1990-06-29 1992-09-08 Ocg Microelectronic Materials, Inc. Positive photoresist composition
US5260162A (en) * 1990-12-17 1993-11-09 Khanna Dinesh N Photosensitizer compositions containing diazo fluorinated esters of hexafluoro-bis-phenols or bis-hexafluoroethers
DE4111445A1 (de) * 1991-04-09 1992-10-15 Hoechst Ag Strahlungsempfindliches gemisch mit estern der 1,2-naphthochinon-2-diazid-sulfonsaeure und ein damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5306594A (en) * 1991-11-04 1994-04-26 Ocg Microelectronic Materials, Inc. Radiation-sensitive compositions using novolak resins made from a substituted bis(hydroxyphenyl)methane and a bis-(methylol)-cresol
DE4209343A1 (de) * 1992-03-23 1993-09-30 Hoechst Ag 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial
DE4219544A1 (de) * 1992-05-06 1993-11-11 Hoechst Ag Verfahren zur Phlegmatisierung von 1,2-Naphthochinon-2-diazid-sulfonsäureestern
US5413894A (en) * 1993-05-07 1995-05-09 Ocg Microelectronic Materials, Inc. High ortho-ortho bonded novolak binder resins and their use in radiation-sensitive compositions
KR100305333B1 (ko) * 1993-10-28 2001-11-22 마티네즈 길러모 감광성수지조성물및이를사용한패턴의형성방법
GB9326150D0 (en) * 1993-12-22 1994-02-23 Alcan Int Ltd Electrochemical roughening method
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
DE69604114T2 (de) * 1995-04-10 2000-03-02 Shipley Co., L.L.C. Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist
JP2790132B2 (ja) * 1996-10-18 1998-08-27 住友化学工業株式会社 集積回路製作用ポジ型レジストパターンの形成方法
JP3105459B2 (ja) * 1996-10-31 2000-10-30 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料
IT1299220B1 (it) 1998-05-12 2000-02-29 Lastra Spa Composizione sensibile sia a radiazioni ir che a radiazioni uv e lastra litografica
KR100363695B1 (ko) * 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
KR100310252B1 (ko) 1999-06-22 2001-11-14 박종섭 유기 반사방지 중합체 및 그의 제조방법
KR100327576B1 (ko) * 1999-06-26 2002-03-14 박종섭 193ｎｍ ＡｒＦ광을 이용한 초미세 패턴 형성 공정에서 반사방지막으로 사용할 수 있는 유기 반사방지 중합체 및 그의 제조방법
KR100400243B1 (ko) 1999-06-26 2003-10-01 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100574482B1 (ko) 1999-09-07 2006-04-27 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100533379B1 (ko) 1999-09-07 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100427440B1 (ko) 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
KR100355604B1 (ko) 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100359862B1 (ko) 1999-12-23 2002-11-09 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100549574B1 (ko) 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
KR100687851B1 (ko) 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687850B1 (ko) 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100574486B1 (ko) 2000-06-30 2006-04-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100419962B1 (ko) * 2001-03-07 2004-03-03 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US6520384B2 (en) * 2001-04-30 2003-02-18 Ketan C. Mehta Apparatus and method for nasal rinse
KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
FR2944281B1 (fr) * 2009-04-08 2011-07-29 Fabre Pierre Dermo Cosmetique Derives soufres de resorcinol, leur preparation et leurs utilisations cosmetiques
US8888752B2 (en) * 2009-12-16 2014-11-18 Water Pik, Inc. Bottle for sinus cavity rinse
US9061096B2 (en) 2009-12-16 2015-06-23 Water Pik, Inc. Powered irrigator for sinus cavity rinse
USD634630S1 (en) 2009-12-16 2011-03-22 Water Pik, Inc. Nozzle
USD630314S1 (en) 2009-12-16 2011-01-04 Water Pik, Inc. Vessel with handle for sinus cavity rinse
USD627458S1 (en) 2009-12-16 2010-11-16 Water Pik, Inc. Vessel for sinus cavity rinse
USD634631S1 (en) 2009-12-16 2011-03-22 Water Pik, Inc. Nozzle and collar
USD653953S1 (en) 2009-12-16 2012-02-14 Water Pik, Inc. Squeeze bottle
USD676126S1 (en) 2010-06-25 2013-02-12 Water Pik, Inc. Faceted nasal seal
US8486029B2 (en) * 2009-12-16 2013-07-16 Water Pik, Inc. Pot for sinus cavity rinse
USD629884S1 (en) 2009-12-16 2010-12-28 Water Pik, Inc. Powered irrigator for sinus cavity rinse
USD676125S1 (en) 2010-06-25 2013-02-12 Water Pik, Inc. Faceted nasal seal with bottom rim
US8991660B2 (en) * 2009-12-16 2015-03-31 Water Pik, Inc. Squeeze bottle for sinus cavity rinse
US8409152B2 (en) 2010-06-25 2013-04-02 Water Pik, Inc. Faceted nasal seal
TWI556958B (zh) * 2010-09-14 2016-11-11 東京應化工業股份有限公司 基質劑及含嵌段共聚物之層的圖型形成方法
USD670373S1 (en) 2010-12-16 2012-11-06 Water Pik, Inc. Powered irrigator for sinus cavity rinse

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL78797C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1949-07-23
BE506677A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1950-10-31
GB1113759A (en) 1965-12-17 1968-05-15 Fuji Photo Film Co Ltd Lithographic printing plates
US3857896A (en) 1967-09-13 1974-12-31 R Desjarlais Substituted diresorcyl sulfide and sulfoxide compounds
US3647443A (en) 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
JPS505084B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-09-16 1975-02-28
DE2331377C2 (de) 1973-06-20 1982-10-14 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Kopiermaterial
JPS5280022A (en) 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
DE2847878A1 (de) 1978-11-04 1980-05-22 Hoechst Ag Lichtempfindliches gemisch
US4308368A (en) * 1979-03-16 1981-12-29 Daicel Chemical Industries Ltd. Photosensitive compositions with reaction product of novolak co-condensate with o-quinone diazide

Also Published As

Publication number Publication date
JPS57135947A (en) 1982-08-21
EP0055814B2 (de) 1989-05-17
EP0055814B1 (de) 1986-03-05
JPH02197844A (ja) 1990-08-06
EP0055814A2 (de) 1982-07-14
JPH021296B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-01-11
US4555469A (en) 1985-11-26
CA1186439A (en) 1985-04-30
EP0055814A3 (en) 1983-05-25
ATE18469T1 (de) 1986-03-15
BR8108552A (pt) 1982-10-19
JPH048781B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-02-18
DE3173996D1 (en) 1986-04-10
AU7887981A (en) 1982-07-15
US4424270A (en) 1984-01-03
AU546108B2 (en) 1985-08-15
DE3100077A1 (de) 1982-08-05

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