ZA202205642B - Method for preparing high-nickel, high-zinc and high-water single-crystal diopside under high-temperature and high-pressure condition - Google Patents

Method for preparing high-nickel, high-zinc and high-water single-crystal diopside under high-temperature and high-pressure condition

Info

Publication number
ZA202205642B
ZA202205642B ZA2022/05642A ZA202205642A ZA202205642B ZA 202205642 B ZA202205642 B ZA 202205642B ZA 2022/05642 A ZA2022/05642 A ZA 2022/05642A ZA 202205642 A ZA202205642 A ZA 202205642A ZA 202205642 B ZA202205642 B ZA 202205642B
Authority
ZA
South Africa
Prior art keywords
diopside
nickel
zinc
crystal
temperature
Prior art date
Application number
ZA2022/05642A
Other languages
English (en)
Inventor
Dai Lidong
Hu Haiying
Original Assignee
Inst Geochemistry Cas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Geochemistry Cas filed Critical Inst Geochemistry Cas
Publication of ZA202205642B publication Critical patent/ZA202205642B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ZA2022/05642A 2021-11-19 2022-05-23 Method for preparing high-nickel, high-zinc and high-water single-crystal diopside under high-temperature and high-pressure condition ZA202205642B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111408039.3A CN114108091B (zh) 2021-11-19 2021-11-19 高温高压下高镍、高锌和高含水的透辉石单晶的制备方法

Publications (1)

Publication Number Publication Date
ZA202205642B true ZA202205642B (en) 2022-08-31

Family

ID=80372416

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2022/05642A ZA202205642B (en) 2021-11-19 2022-05-23 Method for preparing high-nickel, high-zinc and high-water single-crystal diopside under high-temperature and high-pressure condition

Country Status (2)

Country Link
CN (1) CN114108091B (zh)
ZA (1) ZA202205642B (zh)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226758A (ja) * 1992-02-17 1993-09-03 Mitsui Mining & Smelting Co Ltd ディオプサイト単結晶および該単結晶を用いたレーザー
CN100398479C (zh) * 2004-10-18 2008-07-02 成都理工大学 人造透辉石材料及其制备方法
CN107400916B (zh) * 2017-09-04 2019-06-11 中国科学院地球化学研究所 一种在高温高压下生长白云石单晶的方法

Also Published As

Publication number Publication date
CN114108091B (zh) 2022-09-13
CN114108091A (zh) 2022-03-01

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