ZA202205643B - Method for preparing high-scandium, high-zirconium and high-water single-crystal hedenbergite under high-temperature and high-pressure condition - Google Patents

Method for preparing high-scandium, high-zirconium and high-water single-crystal hedenbergite under high-temperature and high-pressure condition

Info

Publication number
ZA202205643B
ZA202205643B ZA2022/05643A ZA202205643A ZA202205643B ZA 202205643 B ZA202205643 B ZA 202205643B ZA 2022/05643 A ZA2022/05643 A ZA 2022/05643A ZA 202205643 A ZA202205643 A ZA 202205643A ZA 202205643 B ZA202205643 B ZA 202205643B
Authority
ZA
South Africa
Prior art keywords
hedenbergite
scandium
zirconium
crystal
temperature
Prior art date
Application number
ZA2022/05643A
Inventor
Dai Lidong
Hu Haiying
Original Assignee
Inst Geochemistry Cas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Geochemistry Cas filed Critical Inst Geochemistry Cas
Publication of ZA202205643B publication Critical patent/ZA202205643B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ZA2022/05643A 2021-11-19 2022-05-23 Method for preparing high-scandium, high-zirconium and high-water single-crystal hedenbergite under high-temperature and high-pressure condition ZA202205643B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111391789.4A CN114232067B (en) 2021-11-19 2021-11-19 Preparation method of high-scandium, high-zirconium and high-water content perovskite single crystal under high temperature and high pressure

Publications (1)

Publication Number Publication Date
ZA202205643B true ZA202205643B (en) 2022-08-31

Family

ID=80750512

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2022/05643A ZA202205643B (en) 2021-11-19 2022-05-23 Method for preparing high-scandium, high-zirconium and high-water single-crystal hedenbergite under high-temperature and high-pressure condition

Country Status (2)

Country Link
CN (1) CN114232067B (en)
ZA (1) ZA202205643B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704907B2 (en) * 2005-08-25 2010-04-27 Ceramext, Llc Synthesized hybrid rock composition, method, and article formed by the method
CN107400916B (en) * 2017-09-04 2019-06-11 中国科学院地球化学研究所 A method of growing dolomite monocrystalline at high temperature under high pressure
CN107675255B (en) * 2017-09-04 2019-06-11 中国科学院地球化学研究所 A method of growing siderite monocrystalline at high temperature under high pressure

Also Published As

Publication number Publication date
CN114232067A (en) 2022-03-25
CN114232067B (en) 2022-09-09

Similar Documents

Publication Publication Date Title
EP4056518A4 (en) Crane hook positioning method, apparatus and system, and engineereing machinery
ZA202109796B (en) System and method for preparing methanol therewith
EP4354518A4 (en) Heterojunction cell and method for preparing same
PL3997741T3 (en) Rear-emitter solar cell structure having a heterojunction, and method and device for producing same
EP3938648C0 (en) Flange connection, wind turbine having same, and method for monitoring same
ZA202205902B (en) Method for preparing single-crystal pyrope under high-temperature and high-pressure condition
ZA202205643B (en) Method for preparing high-scandium, high-zirconium and high-water single-crystal hedenbergite under high-temperature and high-pressure condition
EP4108766A4 (en) Method for preparing fibrosis-encapsulated tumoroid, and use thereof
ZA202205642B (en) Method for preparing high-nickel, high-zinc and high-water single-crystal diopside under high-temperature and high-pressure condition
PT3990846T (en) Plant and method for liquefying gas
ZA202205903B (en) Method for preparing single-crystal spessartine under high-temperature and high-pressure condition
ZA202205904B (en) Method for preparing single-crystal grossular under high-temperature and high-pressure condition
ZA202302208B (en) Method for preparing manganese-doped and high-water single-crystal trevorite under high-temperature and high-pressure condition
ZA202205905B (en) Method for preparing single-crystal wollastonite under high-temperature and high-pressure condition
ZA202302361B (en) Method for preparing aluminum-doped and high-water single-crystal chromite under high-temperature and high-pressure condition
ZA202302515B (en) Method for preparing nickel-doped and high-water single-crystal cochromite under high-temperature and high-pressure condition
EP4163813A4 (en) Method for preparing piping diagram, and device for preparing piping diagram
ZA202302514B (en) Method for preparing vanadium-doped and high-water single-crystal manganochromite under high-temperature and high-pressure condition
ZA202205329B (en) Method for preparing single-crystal high-chromium high-water cobalt olivine under high-temperature and high-pressure condition
ZA202302516B (en) Method for preparing titanium-doped and high-water single-crystal coulsonite under high-temperature and high-pressure condition
ZA202302209B (en) Method for preparing calcium-doped and high-water single-crystal franklinite under high-temperature and high-pressure condition
ZA202302362B (en) Method for preparing titanium-doped and high-water singe-crystal magnochromite under high-temperature and high-pressure condition
EP4050653A4 (en) Method for preparing semiconductor structure, and semiconductor structure
ZA202205906B (en) Method for synthesizing hydrous plagioclase solid solution under high-temperature and high-pressure condition
ZA202205475B (en) Method for preparing high-titanium, high-vanadium and high-water single-crystal hypersthene