ZA202205475B - Method for preparing high-titanium, high-vanadium and high-water single-crystal hypersthene - Google Patents

Method for preparing high-titanium, high-vanadium and high-water single-crystal hypersthene

Info

Publication number
ZA202205475B
ZA202205475B ZA2022/05475A ZA202205475A ZA202205475B ZA 202205475 B ZA202205475 B ZA 202205475B ZA 2022/05475 A ZA2022/05475 A ZA 2022/05475A ZA 202205475 A ZA202205475 A ZA 202205475A ZA 202205475 B ZA202205475 B ZA 202205475B
Authority
ZA
South Africa
Prior art keywords
hypersthene
vanadium
titanium
crystal
preparing
Prior art date
Application number
ZA2022/05475A
Other languages
English (en)
Inventor
Dai Lidong
Hu Haiying
Original Assignee
Inst Geochemistry Cas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Geochemistry Cas filed Critical Inst Geochemistry Cas
Publication of ZA202205475B publication Critical patent/ZA202205475B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ZA2022/05475A 2021-11-19 2022-05-18 Method for preparing high-titanium, high-vanadium and high-water single-crystal hypersthene ZA202205475B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111401199.5A CN114086257B (zh) 2021-11-19 2021-11-19 一种高钛、高钒和高含水的紫苏辉石单晶的制备方法

Publications (1)

Publication Number Publication Date
ZA202205475B true ZA202205475B (en) 2022-08-31

Family

ID=80303787

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2022/05475A ZA202205475B (en) 2021-11-19 2022-05-18 Method for preparing high-titanium, high-vanadium and high-water single-crystal hypersthene

Country Status (2)

Country Link
CN (1) CN114086257B (zh)
ZA (1) ZA202205475B (zh)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5017321B2 (ja) * 2009-06-29 2012-09-05 健 鈴木 オガライト製造装置、およびオガ炭
CN104746128A (zh) * 2015-02-10 2015-07-01 中国科学院物理研究所 一种大体积高压氧化物单晶生长方法
CN107400916B (zh) * 2017-09-04 2019-06-11 中国科学院地球化学研究所 一种在高温高压下生长白云石单晶的方法

Also Published As

Publication number Publication date
CN114086257A (zh) 2022-02-25
CN114086257B (zh) 2022-09-09

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