ZA202205330B - Method for preparing single-crystal high-vanadium high-titanium high-water manganess olivine - Google Patents
Method for preparing single-crystal high-vanadium high-titanium high-water manganess olivineInfo
- Publication number
- ZA202205330B ZA202205330B ZA2022/05330A ZA202205330A ZA202205330B ZA 202205330 B ZA202205330 B ZA 202205330B ZA 2022/05330 A ZA2022/05330 A ZA 2022/05330A ZA 202205330 A ZA202205330 A ZA 202205330A ZA 202205330 B ZA202205330 B ZA 202205330B
- Authority
- ZA
- South Africa
- Prior art keywords
- manganess
- olivine
- water
- titanium
- vanadium
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111317919.XA CN114032608B (en) | 2021-11-09 | 2021-11-09 | Preparation method of high-vanadium high-titanium high-water-content fayalite single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA202205330B true ZA202205330B (en) | 2022-08-31 |
Family
ID=80143495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA2022/05330A ZA202205330B (en) | 2021-11-09 | 2022-05-13 | Method for preparing single-crystal high-vanadium high-titanium high-water manganess olivine |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN114032608B (en) |
LU (1) | LU503016B1 (en) |
ZA (1) | ZA202205330B (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150372303A1 (en) * | 2012-12-21 | 2015-12-24 | Dow Global Technologies Llc | Method for Making Lithium Transition Metal Olivines Using Water/Cosolvent Mixtures |
CN107400916B (en) * | 2017-09-04 | 2019-06-11 | 中国科学院地球化学研究所 | A method of growing dolomite monocrystalline at high temperature under high pressure |
CN107447257B (en) * | 2017-09-04 | 2019-06-11 | 中国科学院地球化学研究所 | A method of growing manganese spar monocrystalline at high temperature under high pressure |
CN108642565B (en) * | 2018-06-15 | 2019-07-26 | 中国科学院地球化学研究所 | A method of carbonate synthesis barium manganese monocrystalline at high temperature under high pressure |
-
2021
- 2021-11-09 CN CN202111317919.XA patent/CN114032608B/en active Active
-
2022
- 2022-05-13 ZA ZA2022/05330A patent/ZA202205330B/en unknown
- 2022-11-08 LU LU503016A patent/LU503016B1/en active
Also Published As
Publication number | Publication date |
---|---|
CN114032608A (en) | 2022-02-11 |
LU503016B1 (en) | 2023-05-16 |
CN114032608B (en) | 2022-09-23 |
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