YU41806B - Method of making of several transistors from a semiconductor wafer - Google Patents

Method of making of several transistors from a semiconductor wafer

Info

Publication number
YU41806B
YU41806B YU115/72A YU11572A YU41806B YU 41806 B YU41806 B YU 41806B YU 115/72 A YU115/72 A YU 115/72A YU 11572 A YU11572 A YU 11572A YU 41806 B YU41806 B YU 41806B
Authority
YU
Yugoslavia
Prior art keywords
making
semiconductor wafer
several transistors
transistors
several
Prior art date
Application number
YU115/72A
Other languages
English (en)
Other versions
YU11572A (en
Inventor
W G Einthoven
E S Jetter
C F Whealtey
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU11572A publication Critical patent/YU11572A/xx
Publication of YU41806B publication Critical patent/YU41806B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps
YU115/72A 1971-01-26 1972-01-17 Method of making of several transistors from a semiconductor wafer YU41806B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10978371A 1971-01-26 1971-01-26

Publications (2)

Publication Number Publication Date
YU11572A YU11572A (en) 1984-02-29
YU41806B true YU41806B (en) 1988-02-29

Family

ID=22329546

Family Applications (1)

Application Number Title Priority Date Filing Date
YU115/72A YU41806B (en) 1971-01-26 1972-01-17 Method of making of several transistors from a semiconductor wafer

Country Status (11)

Country Link
US (1) US3676229A (fr)
JP (1) JPS5145476B1 (fr)
AU (1) AU463388B2 (fr)
BE (1) BE778430A (fr)
CA (1) CA927523A (fr)
DE (1) DE2201833C3 (fr)
FR (1) FR2123285B1 (fr)
GB (1) GB1344395A (fr)
NL (1) NL7200985A (fr)
SE (1) SE381776B (fr)
YU (1) YU41806B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
US4079505A (en) * 1974-03-14 1978-03-21 Fujitsu Limited Method for manufacturing a transistor
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ
US3999217A (en) * 1975-02-26 1976-12-21 Rca Corporation Semiconductor device having parallel path for current flow
DE2656420A1 (de) * 1976-12-13 1978-06-15 Siemens Ag Transistor mit innerer gegenkopplung
DE2949590A1 (de) * 1979-12-10 1981-06-11 Robert Bosch do Brasil, Campinas Verfahren zur vormessung von hochstromparametern bei leistungstransistoren und hierzu geeigneter leistungstransistor
DE3138340A1 (de) * 1981-09-26 1983-04-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von planaren bauelementen
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5451529A (en) * 1994-07-05 1995-09-19 Taiwan Semiconductor Manufacturing Company Method of making a real time ion implantation metal silicide monitor
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
DE102014211352B4 (de) * 2014-06-13 2021-08-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schichtsystem und Verfahren zur Bestimmung des spezifischen Widerstandes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof

Also Published As

Publication number Publication date
AU3793872A (en) 1973-07-19
YU11572A (en) 1984-02-29
US3676229A (en) 1972-07-11
SE381776B (sv) 1975-12-15
GB1344395A (en) 1974-01-23
DE2201833C3 (de) 1978-06-29
JPS5145476B1 (fr) 1976-12-03
DE2201833B2 (de) 1977-11-10
FR2123285A1 (fr) 1972-09-08
AU463388B2 (en) 1975-07-24
DE2201833A1 (de) 1972-08-24
NL7200985A (fr) 1972-07-28
CA927523A (en) 1973-05-29
BE778430A (fr) 1972-05-16
FR2123285B1 (fr) 1977-04-22

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