WO2025246787A1 - 显示基板及其制作方法、显示装置 - Google Patents

显示基板及其制作方法、显示装置

Info

Publication number
WO2025246787A1
WO2025246787A1 PCT/CN2025/092258 CN2025092258W WO2025246787A1 WO 2025246787 A1 WO2025246787 A1 WO 2025246787A1 CN 2025092258 W CN2025092258 W CN 2025092258W WO 2025246787 A1 WO2025246787 A1 WO 2025246787A1
Authority
WO
WIPO (PCT)
Prior art keywords
isolation
layer
substrate
insulating
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/092258
Other languages
English (en)
French (fr)
Inventor
张毅
马宏伟
曾扬
张顺
胡明
邱海军
李锡平
邓治国
宋亮
杨剑波
蒋龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of WO2025246787A1 publication Critical patent/WO2025246787A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • This disclosure relates to the field of display technology, and in particular to a display substrate, a method for manufacturing the same, and a display device.
  • the purpose of this disclosure is to provide a display substrate, a method for manufacturing the same, and a display device.
  • a first aspect of this disclosure provides a display substrate, comprising: a display area, an aperture area, and an isolation area, wherein at least a portion of the display area is located around the aperture area, and at least a portion of the isolation area is located between the aperture area and the display area; the isolation area includes:
  • a conductive isolation post wherein the side of the conductive isolation post has a notch
  • An insulating isolation layer is located on the side of the substrate opposite to the conductive isolation pillar, and the orthographic projection of the conductive isolation pillar on the substrate is located inside the orthographic projection of the insulating isolation layer on the substrate.
  • the cathode layer includes a first cathode portion and a second cathode portion.
  • the first cathode portion is located on the side of the insulating isolation layer facing away from the substrate. At least a portion of the orthographic projection of the second cathode portion on the substrate does not overlap with the orthographic projection of the insulating isolation layer on the substrate. The first cathode portion and the second cathode portion are disconnected at the notch.
  • the edge portion of the insulating layer facing the surface of the substrate has a slope angle ⁇ , where ⁇ > 0°.
  • the boundary of the orthographic projection of the insulating isolation layer on the substrate at least partially overlaps with the boundary of the orthographic projection of the conductive isolation pillar on the substrate.
  • the display substrate further includes: at least one functional structure located in the isolation region, and at least a portion of the functional structure 20 is located on the side of the conductive isolation pillar facing the substrate, the functional structure forming a step around its periphery, and the surface of the functional structure facing away from the substrate including a planar portion and a beveled portion.
  • the orthographic projection of the boundary of the insulating layer on the substrate overlaps with the orthographic projection of the inclined portion on the substrate.
  • the orthographic projection of the insulating isolation layer on the substrate at least partially overlaps with the orthographic projection of the planar portion on the substrate.
  • the orthographic projection of the planar portion on the substrate is located inside the orthographic projection of the insulating layer on the substrate.
  • the display substrate includes at least two functional structures, with a trench between adjacent functional structures, and at least a portion of the insulating layer is located within the trench.
  • the conductive isolation pillar includes a first isolation layer, a second isolation layer and a third isolation layer stacked sequentially in a direction away from the substrate, wherein the orthographic projection of the boundary of the first isolation layer on the substrate surrounds the orthographic projection of the second isolation layer on the substrate.
  • the orthographic projection of the boundary of the first partition layer on the substrate surrounds the orthographic projection of the third partition layer on the substrate; and/or, the orthographic projection of the second partition layer on the substrate overlaps with the orthographic projection of the third partition layer on the substrate.
  • the display substrate includes a source/drain metal layer and an organic planarization layer, wherein the conductive isolation pillars are disposed in the same layer and with the same material as the source/drain metal layer, and the insulating isolation layer is disposed in the same layer and with the same material as the organic planarization layer.
  • the isolation region surrounds the hole region, and the display region surrounds the isolation region;
  • the display substrate further includes: a light-emitting functional layer, which extends from the display region to the isolation region and is disconnected at the notch of the conductive isolation pillar.
  • the functional structure includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, and a third insulating layer sequentially stacked along a direction away from the substrate.
  • the orthographic projection of the second conductive pattern on the substrate is located inside the orthographic projection of the first conductive pattern on the substrate.
  • the first conductive pattern protrudes from the second conductive pattern by a first distance d, which satisfies: 0.5 ⁇ m ⁇ d ⁇ 2 ⁇ m.
  • a second aspect of this disclosure provides a display device including the above-described display substrate.
  • a third aspect of this disclosure provides a method for manufacturing a display substrate, used to manufacture the aforementioned display substrate;
  • the display substrate includes: a display area, a hole area, and an isolation area, wherein at least a portion of the display area is located around the hole area, and at least a portion of the isolation area is located between the hole area and the display area;
  • the manufacturing method includes:
  • Conductive isolation pillars and insulating isolation layers are fabricated in the isolation area; the side of the conductive isolation pillar has a notch; the insulating isolation layer is located on the side of the conductive isolation pillar facing away from the substrate of the display substrate, and the orthographic projection of the conductive isolation pillar on the substrate is located inside the orthographic projection of the insulating isolation layer on the substrate.
  • a cathode layer is fabricated, the cathode layer comprising a first cathode portion and a second cathode portion, the first cathode portion being located on the side of the insulating isolation layer facing away from the substrate, at least a portion of the orthogonal projection of the second cathode portion on the substrate not overlapping the orthogonal projection of the insulating isolation layer on the substrate, and the first cathode portion and the second cathode portion being disconnected at the notch.
  • the steps of fabricating conductive isolation pillars and insulating isolation layers in the isolation region specifically include:
  • An insulating isolation material layer is fabricated on the side of the isolation pillar transition pattern facing away from the substrate, and the insulating isolation material layer is patterned to form an insulating isolation transition layer.
  • the transition pattern of the isolation pillar is patterned to form the conductive isolation pillar and the insulating isolation layer.
  • the edge portion of the insulating isolation layer facing the surface of the substrate has a slope angle ⁇ , where ⁇ > 0°.
  • the manufacturing method further includes:
  • a conductive material layer is formed on the side of the insulating transition layer opposite to the substrate.
  • the steps of constructing the transition pattern of the isolation pillar using the insulating isolation transition layer as a mask specifically include:
  • the conductive material layer is etched to form a conductive pattern; simultaneously, over-etching is performed in the same etching process to form the conductive isolation pillars and the insulating isolation layer.
  • the display substrate includes: at least two functional structures, with a trench between adjacent functional structures, and at least a portion of the insulating layer is located within the trench;
  • Figures 1 to 6 are schematic diagrams of the first manufacturing process of the conductive isolation pillar and the insulating isolation layer provided in the embodiments of this disclosure;
  • Figures 7 to 12 are schematic diagrams of a second manufacturing process for the conductive isolation pillar and the insulating isolation layer provided in the embodiments of this disclosure;
  • Figure 13 is a plan view of the regions included in the display substrate provided in the embodiments of this disclosure.
  • isolation pillars can be set near the through hole to isolate the organic light-emitting material layer. This disconnects the organic light-emitting material layer near the through hole from the organic light-emitting material layer inside the display area, thus preventing the organic light-emitting material layer from becoming a transmission path for water vapor and oxygen to invade the interior of the display product.
  • a full-surface cathode layer is formed.
  • This cathode layer transmits cathode signals, and a portion of it overlaps with an isolation pillar. Since the isolation pillar is conductive, it also carries electrical signals. When moisture and alkaline ions invade and come into contact with the isolation pillar, corrosion occurs due to an electrochemical reaction. This corrosion of the isolation pillar may damage the display product structure in the encapsulation area of the via, further allowing moisture to contact the organic light-emitting material layer inside the screen, ultimately causing black spots on the via.
  • This disclosure provides a display substrate including: a display area 61, an aperture area 62, and an isolation area 63. At least a portion of the display area 61 is located around the aperture area 62, and at least a portion of the isolation area 63 is located between the aperture area 62 and the display area 61.
  • the isolation area 63 includes:
  • An insulating isolation layer 40 is located on the side of the conductive isolation pillar 30 that faces away from the substrate 10 of the display substrate.
  • the orthogonal projection of the conductive isolation pillar 30 on the substrate 10 is located inside the orthogonal projection of the insulating isolation layer 40 on the substrate 10.
  • the cathode layer 50 includes a first cathode portion 501 and a second cathode portion 502.
  • the first cathode portion 501 is located on the side of the insulating isolation layer 40 facing away from the substrate 10. At least a portion of the orthographic projection of the second cathode portion 502 on the substrate 10 does not overlap with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the first cathode portion 501 and the second cathode portion 502 are disconnected at the notch.
  • the isolation region 63 surrounds the hole region 62, and the display region 61 surrounds the isolation region 63; the display substrate further includes: a light-emitting functional layer EL, which extends from the display region 61 to the isolation region 63 and is broken at the notch of the conductive isolation post 30.
  • a light-emitting functional layer EL which extends from the display region 61 to the isolation region 63 and is broken at the notch of the conductive isolation post 30.
  • the isolation region 63 includes a conductive isolation pillar 30, which may be made of a metallic material, but is not limited thereto.
  • the orthographic projection of the conductive isolation pillar 30 on the substrate 10 at least partially surrounds the orthographic projection of the hole region 62 on the substrate 10; furthermore, the orthographic projection of the conductive isolation pillar 30 on the substrate 10 may be configured to completely surround the orthographic projection of the hole region 62 on the substrate 10.
  • the isolation region 63 includes an insulating isolation layer 40, which is made of inorganic or organic insulating material.
  • the orthographic projection of the conductive isolation pillar 30 on the substrate 10 coincides with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the orthographic projection of the boundary of the insulating isolation layer 40 on the substrate 10 surrounds the orthographic projection of the conductive isolation pillar 30 on the substrate 10.
  • the display substrate includes a cathode layer 50, which includes a portion located in the isolation region 63. This portion includes a first cathode portion 501 and a second cathode portion 502 that are disconnected at the notch.
  • the first cathode portion 501 is located on the surface of the insulating isolation layer 40 facing away from the substrate 10, and the second cathode portion 502 is located around the first cathode portion 501.
  • the second cathode portion 502 is not in contact with the insulating isolation layer 40.
  • the display substrate further includes a partition structure, which may be disposed between two adjacent conductive isolation pillars 30.
  • the partition structure is used to isolate the second cathode portion 502 that is respectively coupled to the two adjacent conductive isolation pillars 30.
  • the partition structure may also be disposed between the conductive isolation pillars 30 and the display area, for isolating the second cathode portion 502 that is respectively coupled to the conductive isolation pillars 30 and the portion of the cathode layer located in the display area.
  • an insulating isolation layer 40 is provided on the side of the conductive isolation pillar 30 facing away from the substrate 10
  • a cathode layer 50 is provided on the side of the insulating isolation layer 40 facing away from the substrate 10.
  • the cathode layer 50 is divided into a first cathode portion 501 and a second cathode portion 502 at the notch of the conductive isolation pillar 30.
  • the first cathode portion 501 is located on the side of the insulating isolation layer 40 facing away from the substrate 10, and at least a portion of the orthographic projection of the second cathode portion 502 on the substrate 10 does not overlap with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the insulating isolation layer 40 is insulating and located between the conductive isolation pillar 30 and the first cathode portion 501, it can insulate the conductive isolation pillar 30 and the first cathode portion 501 from each other, preventing the first cathode portion 501 and the second cathode portion 502 from being connected via the conductive isolation pillar 30, and preventing the conductive isolation pillar 30 from receiving electrical signals from the first cathode portion 501.
  • the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40 by providing the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40, the possibility of forming a conductive path between the conductive isolation pillar 30 and the cathode layer 50 that transmits electrical signals is effectively reduced, thereby effectively improving the GDSH problem caused by electrochemical corrosion.
  • the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 has a slope angle ⁇ , where ⁇ > 0°.
  • 'a' satisfies: 0° ⁇ a ⁇ 90°, but it is not limited to this.
  • 'a' can be further specified to satisfy: 20° ⁇ a ⁇ 80°, 30° ⁇ a ⁇ 70°, 40° ⁇ a ⁇ 70°, etc.
  • the shape of the surface of the insulating isolation layer 40 facing the substrate 10 is determined by the surface shape of the carrier supporting the insulating isolation layer 40. For instance, if the conductive isolation pillar 30 supports the insulating isolation layer 40, that is, the insulating isolation layer 40 is located on the surface of the conductive isolation pillar 30 facing away from the substrate 10, in this case, the surface shape of the conductive isolation pillar 30 facing away from the substrate 10 determines the shape of the insulating isolation layer 40 facing the surface of the substrate 10.
  • the isolation edge portion of the conductive isolation pillar 30 is provided with a slope angle ⁇ , and the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 is located on the isolation edge portion.
  • the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 can continue the morphology of the isolation edge portion and also has a slope angle ⁇ .
  • the boundary of the insulating layer 40 is located on the slope formed by its carrier.
  • the boundary of the insulating layer 40 is located on the slope formed by the conductive insulating pillar 30.
  • the aforementioned setting of the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 has a slope angle ⁇ > 0°, such that the boundary of the insulating isolation layer 40 is located on the slope formed by the conductive isolation pillar 30.
  • This helps to increase the thickness of the edge portion of the insulating isolation layer 40, thereby effectively improving the isolation effect of the edge portion of the insulating isolation layer 40 between the conductive isolation pillar 30 and the first cathode portion 501.
  • the boundary of the orthographic projection of the insulating isolation layer 40 onto the substrate 10 at least partially overlaps with the boundary of the orthographic projection of the conductive isolation pillar 30 onto the substrate 10.
  • the boundary of the orthographic projection of the insulating isolation layer 40 onto the substrate 10 substantially overlaps with the boundary of the orthographic projection of the conductive isolation pillar 30 onto the substrate 10. It should be noted that the substantial overlap is achieved by trying to make the overlap as close as possible while taking into account process errors.
  • the insulating isolation layer 40 can be used as a mask to etch and form the conductive isolation pillars 30, so that the boundary of the insulating isolation layer 40 is approximately flush with the boundary of the conductive isolation pillars 30. It should be noted that the phrase "approximately flush” means that the boundaries are made as flush as possible while taking into account process errors.
  • the display substrate further includes: at least one functional structure 20, the functional structure 20 being located in the isolation region 63, and at least a portion of the functional structure 20 being located on the side of the conductive isolation pillar 30 facing the substrate 10, the functional structure 20 forming a step around its periphery, and the surface of the functional structure 20 facing away from the substrate 10 including a planar portion 204 and a beveled portion 205;
  • the orthographic projection of the boundary of the insulating isolation layer 40 on the substrate 10 overlaps with the orthographic projection of the inclined portion 205 on the substrate 10.
  • the functional structure 20 is arranged around the hole region 62, but is not limited thereto.
  • the functional structure 20 includes at least one film layer sequentially stacked along a direction away from the substrate 10.
  • the functional structure 20 includes a first insulating layer, a first conductive pattern 201, a second insulating layer, a second conductive pattern 202, and a third insulating layer sequentially stacked along a direction away from the substrate 10.
  • the first insulating layer, the first conductive pattern, the second insulating layer, the second conductive pattern, and the third insulating layer can all be formed simultaneously with the corresponding film layer of the display area 61 in the same patterning process, without requiring additional patterning processes.
  • the first conductive pattern can be fabricated in the same layer and with the same material as the first gate metal layer in the display area 61
  • the second conductive pattern can be fabricated in the same layer and with the same material as the second gate metal layer in the display area 61.
  • 203 in the drawings represents an insulating layer, including the first insulating layer, the second insulating layer, and the third insulating layer; the boundary of the insulating layer is not shown in the diagram.
  • the functional structure 20 is formed as a raised structure, which can generate steps around its perimeter.
  • the surface of the functional structure 20 facing away from the substrate 10 includes a planar portion 204 and a sloped portion 205; the orthographic projection of the sloped portion 205 on the substrate 10 surrounds the orthographic projection of the planar portion 204 on the substrate 10, but is not limited thereto.
  • the orthographic projection of the boundary of the insulating isolation layer 40 on the substrate 10 overlaps with the orthographic projection of the inclined portion 205 on the substrate 10.
  • the boundary of the insulating isolation layer 40 may be located in the middle region of the inclined portion 205, but is not limited to this.
  • the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 can have a slope angle, and the slope angle ⁇ > 0°, so that the boundary of the insulating isolation layer 40 is located on the slope formed by the conductive isolation pillar 30.
  • the orthographic projection of the insulating isolation layer 40 on the substrate 10 at least partially overlaps with the orthographic projection of the planar portion 204 on the substrate 10.
  • the orthographic projection of the planar portion 204 on the substrate 10 is located inside the orthographic projection of the insulating layer 40 on the substrate 10.
  • the above-described configuration allows both the conductive isolation pillar 30 and the insulating isolation layer 40 to cover at least a portion of the plane, and to set the boundary on the inclined portion 205.
  • This enables the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 to have a slope angle, where the slope angle ⁇ > 0°.
  • This places the boundary of the insulating isolation layer 40 on the slope formed by the conductive isolation pillar 30, which helps to increase the thickness of the edge portion of the insulating isolation layer 40.
  • the functional structure includes a first insulating layer, a first conductive pattern 201, a second insulating layer, a second conductive pattern 202, and a third insulating layer sequentially stacked along a direction away from the substrate 10.
  • the orthographic projection of the second conductive pattern 202 on the substrate 10 is located inside the orthographic projection of the first conductive pattern 201 on the substrate 10.
  • the first conductive pattern 201 protrudes from the second conductive pattern 202 by a first distance d, the first distance d satisfying: 0.5 ⁇ m ⁇ d ⁇ 2 ⁇ m.
  • d can take values such as 0.7 ⁇ m, 1 ⁇ m, 1.5 ⁇ m, 1.7 ⁇ m, etc., but is not limited to these.
  • the boundary of the orthographic projection of the first conductive pattern 201 on the substrate 10 surrounds the orthographic projection of the second conductive pattern 202 on the substrate 10.
  • the above setting d satisfies: 0.5 ⁇ m ⁇ d ⁇ 2 ⁇ m, so that the first conductive pattern 201 can protrude 0.5 ⁇ m to 2 ⁇ m in any direction around the second conductive pattern 202. This is beneficial to form a slope around the first conductive pattern 201 and the second conductive pattern 202, so that the surface of the functional structure facing away from the substrate has a sloped portion.
  • the display substrate includes at least two functional structures 20, with a trench 70 between adjacent functional structures 20, and at least a portion of the insulating isolation layer 40 is located within the trench 70.
  • the above configuration allows both the conductive isolation pillar 30 and the insulating isolation layer 40 to cover at least a portion of the trench 70, and to set the boundary on the inclined portion 205.
  • This enables the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 to have a slope angle, where the slope angle ⁇ > 0°.
  • This places the boundary of the insulating isolation layer 40 on the slope formed by the conductive isolation pillar 30, which helps to increase the thickness of the edge portion of the insulating isolation layer 40.
  • the conductive isolation pillar 30 includes a first isolation layer 301, a second isolation layer 302, and a third isolation layer 303 sequentially stacked along a direction away from the substrate 10.
  • the orthographic projection of the boundary of the first isolation layer 301 on the substrate 10 surrounds the orthographic projection of the second isolation layer 302 on the substrate 10.
  • the orthographic projection of the first isolation layer 301 on the substrate 10 overlaps with the orthographic projection of the third isolation layer 303 on the substrate 10.
  • the conductive isolation pillar 30 includes a first isolation layer 301, a second isolation layer 302 and a third isolation layer 303 stacked sequentially in a direction away from the substrate 10, wherein the orthographic projection of the boundary of the first isolation layer 301 on the substrate 10 surrounds the orthographic projection of the second isolation layer 302 on the substrate 10.
  • the orthographic projection of the boundary of the first partition layer 301 on the substrate 10 surrounds the orthographic projection of the third partition layer 303 on the substrate 10; and/or, the orthographic projection of the second partition layer 302 on the substrate 10 overlaps with the orthographic projection of the third partition layer 303 on the substrate 10.
  • the first partition layer 301 is made of metal Ti
  • the second partition layer 302 is made of metal Al
  • the third partition layer 303 is made of metal Ti, but it is not limited to this.
  • the edges of the first partition layer 301 and/or the third partition layer 303 protrude beyond the edge of the second partition layer 302, forming a notch on the side of the conductive isolation post 30.
  • the edge portion of the third partition layer 303 also has the slope angle and is in an upward-curving state without support below.
  • the edge portion of the third partition layer 303 will fall off, while the edge portion of the insulating isolation layer 40 will remain. Because the edge portion of the third partition layer 303 protrudes beyond the second partition layer 302, it is still possible to ensure that both the organic light-emitting functional layer EL and the cathode layer 50 are disconnected at this point.
  • it can better ensure the insulation between the first cathode portion 501 and the conductive isolation pillar 30, thereby better improving the GDSH problem caused by electrochemical corrosion.
  • the display substrate includes a source/drain metal layer and an organic planarization layer
  • the conductive isolation pillar 30 is disposed in the same layer and with the same material as the source/drain metal layer
  • the insulating isolation layer 40 is disposed in the same layer and with the same material as the organic planarization layer.
  • the above configuration allows the conductive isolation pillar 30 and the source/drain metal layer to be formed simultaneously in the same patterning process, and the insulating isolation layer 40 and the organic planarization layer to be formed simultaneously in the same patterning process. Therefore, in the display substrate provided by the above embodiment, the conductive isolation pillar 30 and the insulating isolation layer 40 can be formed without increasing the patterning process steps, thereby improving GDSH without affecting production capacity and cost.
  • This disclosure also provides a display device, including the display substrate provided in the above embodiments.
  • the display device can be any product or component with display function, such as a television, monitor, digital photo frame, mobile phone, or tablet computer.
  • the display device also includes flexible circuit boards, printed circuit boards, and backplanes.
  • an insulating isolation layer 40 is provided on the side of the conductive isolation pillar 30 facing away from the substrate 10, and a cathode layer 50 is provided on the side of the insulating isolation layer 40 facing away from the substrate 10.
  • the cathode layer 50 is divided into a first cathode portion 501 and a second cathode portion 502 at the notch of the conductive isolation pillar 30.
  • the first cathode portion 501 is located on the side of the insulating isolation layer 40 facing away from the substrate 10, and at least a portion of the orthographic projection of the second cathode portion 502 on the substrate 10 does not overlap with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the insulating isolation layer 40 is insulating and is located between the conductive isolation pillar 30 and the first cathode portion 501, the insulating isolation layer 40 can insulate the conductive isolation pillar 30 and the first cathode portion 501 from each other, avoiding communication between the first cathode portion 501 and the second cathode portion 502 through the conductive isolation pillar 30, and preventing the conductive isolation pillar 30 from receiving electrical signals from the first cathode portion 501.
  • the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40 by providing the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40, the possibility of forming a conductive path between the conductive isolation pillar 30 and the cathode layer 50 that transmits electrical signals is effectively reduced, thereby effectively improving the GDSH problem caused by electrochemical corrosion.
  • the display device provided in this disclosure when including the above-described display substrate, also has the above-described beneficial effects, which will not be repeated here.
  • This disclosure also provides a method for manufacturing a display substrate, used to manufacture the display substrate provided in the above embodiments;
  • the display substrate includes: a display area 61, an aperture area 62, and an isolation area 63, wherein at least a portion of the display area 61 is located around the aperture area 62, and at least a portion of the isolation area 63 is located between the aperture area 62 and the display area 61;
  • the manufacturing method includes:
  • Conductive isolation pillars 30 and insulating isolation layers 40 are fabricated in the isolation region 63; the conductive isolation pillars 30 have notches on their sides; the insulating isolation layer 40 is located on the side of the conductive isolation pillars 30 that faces away from the substrate 10 of the display substrate, and the orthographic projection of the conductive isolation pillars 30 on the substrate 10 is located inside the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • a cathode layer 50 is fabricated, the cathode layer 50 including a first cathode portion 501 and a second cathode portion 502.
  • the first cathode portion 501 is located on the side of the insulating isolation layer 40 facing away from the substrate 10. At least a portion of the orthographic projection of the second cathode portion 502 on the substrate 10 does not overlap with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the first cathode portion 501 and the second cathode portion 502 are disconnected at the notch.
  • an insulating isolation layer 40 is provided on the side of the conductive isolation pillar 30 facing away from the substrate 10, and a cathode layer 50 is provided on the side of the insulating isolation layer 40 facing away from the substrate 10.
  • the cathode layer 50 is divided into a first cathode portion 501 and a second cathode portion 502 at the notch of the conductive isolation pillar 30.
  • the first cathode portion 501 is located on the side of the insulating isolation layer 40 facing away from the substrate 10, and at least a portion of the orthographic projection of the second cathode portion 502 on the substrate 10 does not overlap with the orthographic projection of the insulating isolation layer 40 on the substrate 10.
  • the insulating isolation layer 40 is insulating and located between the conductive isolation pillar 30 and the first cathode portion 501, it can insulate the conductive isolation pillar 30 and the first cathode portion 501 from each other, preventing the first cathode portion 501 and the second cathode portion 502 from being connected via the conductive isolation pillar 30, and preventing the conductive isolation pillar 30 from receiving electrical signals from the first cathode portion 501.
  • the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40 by providing the isolation region 63 including the conductive isolation pillar 30 and the insulating isolation layer 40, the possibility of a conductive path forming between the conductive isolation pillar 30 and the cathode layer 50 transmitting electrical signals is effectively reduced, thereby effectively improving the GDSH problem caused by electrochemical corrosion.
  • the steps of fabricating conductive isolation pillars 30 and insulating isolation layers 40 in the isolation region 63 specifically include:
  • An insulating isolation material layer is fabricated on the side of the isolation pillar transition pattern facing away from the substrate 10, and a patterning process is performed on the insulating isolation material layer to form an insulating isolation transition layer;
  • the transition pattern of the isolation pillar is patterned to form the conductive isolation pillar 30 and the insulating isolation layer 40.
  • the edge portion of the insulating isolation layer 40 facing the surface of the substrate 10 has a slope angle ⁇ , where ⁇ > 0°.
  • a source/drain metal material layer is formed, and a patterning process is performed on the source/drain metal material layer to form the isolation pillar transition pattern, as well as the conductive structure in the display substrate that needs to be formed using the source/drain metal material layer.
  • the orthographic projection of the insulating isolation transition layer on the substrate 10 is located inside the orthographic projection of the isolation pillar transition pattern on the substrate 10, and the boundary of the orthographic projection of the isolation pillar transition pattern on the substrate 10 surrounds the orthographic projection of the insulating isolation transition layer on the substrate 10.
  • the source/drain metal layer may be a Ti film layer, an Al film layer and a Ti film layer stacked sequentially in a direction away from the substrate 10, but is not limited to this.
  • a full-length insulating isolation material layer is formed on the side of the isolation pillar transition pattern facing away from the substrate 10.
  • the insulating isolation material layer is then exposed and developed to form an insulating isolation transition layer.
  • an organic insulating layer material can be used to form the insulating isolation material layer, but it is not limited to this.
  • the insulating isolation transition layer is used as a mask to etch the transition pattern of the isolation pillar to form the conductive isolation pillar 30 and the insulating isolation layer 40, the boundary portion of the insulating isolation transition layer will be etched away due to the etching process, thereby forming the insulating isolation layer 40. Then, the conductive isolation pillar 30 is formed by etching with the insulating isolation layer 40 as a mask.
  • the thickness of the boundary portion of the formed insulating isolation layer 40 is greater than the thickness of the boundary portion of the insulating isolation transition layer. Due to the patterning process, the boundary portion of the insulating isolation transition layer is thinner than its adjacent portion, which becomes the boundary portion of the insulating isolation layer 40 after etching. Therefore, the thickness of the boundary portion of the formed insulating isolation layer 40 is greater than the thickness of the boundary portion of the insulating isolation transition layer. It is worth noting that the edge portion of the insulating isolation layer 40 includes the boundary portion of the insulating isolation layer 40.
  • an anode layer is fabricated.
  • the etching solution will undergo a displacement reaction with the exposed portion of the Al film layer, forming a notch on the side of the conductive isolation pillar 30.
  • the insulating isolation transition layer is used as a mask to etch the transition pattern of the isolation pillar.
  • a self-alignment technique is adopted so that the boundary of the insulating isolation layer 40 is at least flush with the boundary of the conductive isolation pillar 30, thereby effectively achieving insulation between the conductive isolation pillar 30 and the second cathode portion 502, thereby effectively improving the GDSH problem caused by electrochemical corrosion.
  • the manufacturing method further includes:
  • a conductive material layer is formed on the side of the insulating transition layer opposite to the substrate 10.
  • the steps of constructing the transition pattern of the isolation pillar using the insulating isolation transition layer as a mask specifically include:
  • the conductive material layer is etched to form a conductive pattern; simultaneously, over-etching is performed in the same etching process to form the conductive isolation pillar 30 and the insulating isolation layer 40.
  • the conductive material layer may include only the second source/drain metal layer, or it may include both the second source/drain metal layer and the third source/drain metal layer, but it is not limited to this.
  • the etching time can be extended.
  • the insulating isolation transition layer is used as a mask to etch the isolation pillar transition pattern, thereby forming the conductive isolation pillar 30 and the insulating isolation layer 40.
  • the display substrate includes: at least two functional structures 20, with a trench 70 between adjacent functional structures 20, and at least a portion of the insulating isolation layer 40 located within the trench 70;
  • the edge portion of the third partition layer 303 also has the slope angle and is in an upward-curving state without support below.
  • the edge portion of the third partition layer 303 will fall off, while the edge portion of the insulating isolation layer 40 will remain. Because the edge portion of the third partition layer 303 protrudes beyond the second partition layer 302, it is still possible to ensure that both the organic light-emitting functional layer EL and the cathode layer 50 are disconnected at this point.
  • it can better ensure the insulation between the first cathode portion 501 and the conductive isolation pillar 30, thereby better improving the GDSH problem caused by electrochemical corrosion.
  • film layer can refer to film layers located on the same structural layer.
  • film layers located on the same layer can be layer structures formed by using the same film deposition process to form a specific pattern, and then patterning the film layer using the same photomask through a single patterning process.
  • the single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure can be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses.
  • a component such as a layer, film, region, or substrate
  • the component may be “directly” located “above” or “below” the other component, or there may be intermediate components present.

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Abstract

本公开提供一种显示基板及其制作方法、显示装置。显示基板包括：显示区域、孔区域和隔离区域，隔离区域位于孔区域和显示区域之间；隔离区域包括：导电隔离柱，绝缘隔离层和阴极层；导电隔离柱的侧面具有凹口；绝缘隔离层位于导电隔离柱背向显示基板的衬底基板的一侧，导电隔离柱在衬底基板上的正投影，位于绝缘隔离层在衬底基板上的正投影的内部；阴极层包括第一阴极部分和第二阴极部分，第一阴极部分位于绝缘隔离层背向衬底基板的一侧，第二阴极部分在衬底基板上的正投影的至少部分与绝缘隔离层在衬底基板上的正投影不交叠，第一阴极部分和第二阴极部分在凹口处断开。

Description

显示基板及其制作方法、显示装置
相关申请的交叉引用
本申请主张在2024年05月31日在中国提交的中国专利申请号No.202410703394.0的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板及其制作方法、显示装置。
背景技术
随着显示技术的不断发展，显示产品的应用领域越来越广泛，相应的人们对显示产品的要求也越来越高。为了更好的实现全屏显示，相关技术中会把摄像头设置于显示产品的显示区域内，即在显示区域内形成通孔，将摄像头设置于所述通孔内。这种设置方式虽然有利于实现全屏显示，但容易在显示产品的显示屏上产生孔黑斑(英文：Gray Dot in Screen Hole，简称：GDSH)，降低显示产品的生产良率。
发明内容
本公开的目的在于提供一种显示基板及其制作方法、显示装置。
为了实现上述目的，本公开提供如下技术方案：
本公开的第一方面提供一种显示基板，包括：显示区域、孔区域和隔离区域，所述显示区域的至少部分位于所述孔区域的周边，所述隔离区域的至少部分位于所述孔区域和所述显示区域之间；所述隔离区域包括：
导电隔离柱，所述导电隔离柱的侧面具有凹口；
绝缘隔离层，所述绝缘隔离层位于所述导电隔离柱背向所述显示基板的衬底基板的一侧，所述导电隔离柱在所述衬底基板上的正投影，位于所述绝缘隔离层在所述衬底基板上的正投影的内部；
阴极层，所述阴极层包括第一阴极部分和第二阴极部分，所述第一阴极部分位于所述绝缘隔离层背向所述衬底基板的一侧，所述第二阴极部分在所述衬底基板上的正投影的至少部分与所述绝缘隔离层在所述衬底基板上的正投影不交叠，所述第一阴极部分和所述第二阴极部分在所述凹口处断开。
可选的，所述绝缘隔离层朝向所述衬底基板的表面的边缘部分具有坡度角a，a满足：a＞0°。
可选的，所述绝缘隔离层在所述衬底基板上的正投影的边界与所述导电隔离柱在所述衬底基板上的正投影的边界至少部分重叠。
可选的，所述显示基板还包括：至少一个功能结构，所述功能结构位于所述隔离区域，且所述功能结构20的至少部分位于所述导电隔离柱朝向所述衬底基板的一侧，所述功能结构在其周边形成段差，所述功能结构背向所述衬底基板的表面包括平面部分和斜面部分；
所述绝缘隔离层的边界在所述衬底基板上的正投影，与所述斜面部分在所述衬底基板上的正投影交叠。
可选的，所述绝缘隔离层在所述衬底基板上的正投影与所述平面部分在所述衬底基板上的正投影至少部分交叠。
可选的，所述平面部分在所述衬底基板上的正投影位于所述绝缘隔离层在所述衬底基板上的正投影的内部。
可选的，所述显示基板包括：至少两个功能结构，相邻的所述功能结构之间具有沟槽，所述绝缘隔离层的至少部分位于所述沟槽内。
可选的，所述导电隔离柱包括沿远离所述衬底基板的方向依次层叠设置的第一隔断层、第二隔断层和第三隔断层，所述第一隔断层的边界在所述衬底基板上的正投影包围所述第二隔断层在所述衬底基板上的正投影；
所述第一隔断层的边界在所述衬底基板上的正投影包围所述第三隔断层在所述衬底基板上的正投影；和/或，所述第二隔断层在所述衬底基板上的正投影与所述第三隔断层在所述衬底基板上的正投影重叠。
可选的，所述显示基板包括源漏金属层和有机平坦层，所述导电隔离柱与所述源漏金属层同层同材料设置，所述绝缘隔离层与所述有机平坦层同层同材料设置。
可选的，所述隔离区域包围所述孔区域，所述显示区域包围所述隔离区域；所述显示基板还包括：发光功能层，所述发光功能层从所述显示区域延伸至所述隔离区域，并在所述导电隔离柱的凹口处断开。
可选的，所述功能结构包括沿远离所述衬底基板的方向依次层叠设置的第一绝缘层、第一导电图形、第二绝缘层、第二导电图形和第三绝缘层；
所述第二导电图形在所述衬底基板上的正投影，位于所述第一导电图形在所述衬底基板上的正投影的内部，在平行于所述衬底基板的方向上，所述第一导电图形突出于所述第二导电图形第一距离，所述第一距离d满足：0.5μm≤d≤2μm。
基于上述显示基板的技术方案，本公开的第二方面提供一种显示装置，包括上述显示基板。
基于上述显示基板的技术方案，本公开的第三方面提供一种显示基板的制作方法，用于制作上述显示基板；所述显示基板包括：显示区域、孔区域和隔离区域，所述显示区域的至少部分位于所述孔区域的周边，所述隔离区域的至少部分位于所述孔区域和所述显示区域之间；所述制作方法包括：
在所述隔离区域制作导电隔离柱和绝缘隔离层；所述导电隔离柱的侧面具有凹口；所述绝缘隔离层位于所述导电隔离柱背向所述显示基板的衬底基板的一侧，所述导电隔离柱在所述衬底基板上的正投影，位于所述绝缘隔离层在所述衬底基板上的正投影的内部；
制作阴极层，所述阴极层包括第一阴极部分和第二阴极部分，所述第一阴极部分位于所述绝缘隔离层背向所述衬底基板的一侧，所述第二阴极部分在所述衬底基板上的正投影的至少部分与所述绝缘隔离层在所述衬底基板上的正投影不交叠，所述第一阴极部分和所述第二阴极部分在所述凹口处断开。
可选的，在所述隔离区域制作导电隔离柱和绝缘隔离层的步骤具体包括：
制作隔离柱过渡图形；
在所述隔离柱过渡图形背向所述衬底基板的一侧制作绝缘隔离材料层，对所述绝缘隔离材料层进行构图工艺，形成绝缘隔离过渡层；
以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图，形成所述导电隔离柱和所述绝缘隔离层，所述绝缘隔离层朝向所述衬底基板的表面的边缘部分具有坡度角a，a满足：a＞0°。
可选的，所述制作方法还包括：
在所述绝缘隔离过渡层背向所述衬底基板的一侧制作导电材料层；
以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图的步骤具体包括：
对所述导电材料层进行刻蚀工艺，形成导电图形；同时在该刻蚀工艺流程中进行过刻蚀，形成所述导电隔离柱和所述绝缘隔离层。
可选的，所述显示基板包括：至少两个功能结构，相邻的所述功能结构之间具有沟槽，所述绝缘隔离层的至少部分位于所述沟槽内；
在所述隔离区域制作导电隔离柱和绝缘隔离层之后，进行水洗工艺。
附图说明
此处所说明的附图用来提供对本公开的进一步理解，构成本公开的一部分，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1至图6为本公开实施例提供的导电隔离柱和绝缘隔离层的第一种制作流程示意图；
图7至图12为本公开实施例提供的导电隔离柱和绝缘隔离层的第二种制作流程示意图；
图13为本公开实施例提供的显示基板包括的各区域的平面示意图。
具体实施方式
为了进一步说明本公开实施例提供的显示基板及其制作方法、显示装置，下面结合说明书附图进行详细描述。
以有机发光二极管显示产品为例，为了避免位于通孔附近的有机发光材料层成为水汽和氧气入侵显示产品内部的传输路径，可以在通孔附近设置隔离柱，使有机发光材料层能够被隔离柱隔断，使位于通孔附近的有机发光材料层与显示区域内部的有机发光材料层之间断开，避免有机发光材料层成为水汽和氧气入侵显示产品内部的传输路径。
由于在制作有机发光材料层之后，还会继续形成整面的阴极层，所述阴极层上传输有阴极信号，所述阴极层的一部分会与隔离柱搭接在一起，在所述隔离柱具有导电性能的情况下，所述隔离柱上也具有电信号，这样当水汽和碱性离子入侵与所述隔离柱接触时，会因为电化学反应而发生腐蚀。而由于隔离柱受到腐蚀，可能会在通孔的封装区域破坏显示产品结构，进一步导致水汽接触屏幕内部的有机发光材料层，最终引发孔黑斑现象。
请参阅图5、图6、图11至图13，本公开实施例提供了一种显示基板，包括：显示区域61、孔区域62和隔离区域63，所述显示区域61的至少部分位于所述孔区域62的周边，所述隔离区域63的至少部分位于所述孔区域62和所述显示区域61之间；所述隔离区域63包括：
导电隔离柱30，所述导电隔离柱30的侧面具有凹口；
绝缘隔离层40，所述绝缘隔离层40位于所述导电隔离柱30背向所述显示基板的衬底基板10的一侧，所述导电隔离柱30在所述衬底基板10上的正投影，位于所述绝缘隔离层40在所述衬底基板10上的正投影的内部；
阴极层50，所述阴极层50包括第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的一侧，所述第二阴极部分502在所述衬底基板10上的正投影的至少部分与所述绝缘隔离层40在所述衬底基板10上的正投影不交叠，所述第一阴极部分501和所述第二阴极部分502在所述凹口处断开。
示例性的，所述隔离区域63包围所述孔区域62，所述显示区域61包围所述隔离区域63；所述显示基板还包括：发光功能层EL，所述发光功能层EL从所述显示区域61延伸至所述隔离区域63，并在所述导电隔离柱30的凹口处断开。
示例性的，所述隔离区域63包括导电隔离柱30，所述导电隔离柱30可以采用金属材料，但不仅限于此。所述导电隔离柱30在所述衬底基板10上的正投影，至少部分包围所述孔区域62在所述衬底基板10上的正投影；进一步地，可设置所述导电隔离柱30在所述衬底基板10上的正投影，完全包围所述孔区域62在所述衬底基板10上的正投影。
示例性的，所述隔离区域63包括绝缘隔离层40，所述绝缘隔离层40采用无机绝缘材料或有机绝缘材料。
示例性的，所述导电隔离柱30在所述衬底基板10上的正投影，与所述绝缘隔离层40在所述衬底基板10上的正投影重合。或者，所述绝缘隔离层40的边界在所述衬底基板10上的正投影，包围所述导电隔离柱30在所述衬底基板10上的正投影。
示例性的，所述显示基板包括阴极层50，所述阴极层50包括位于所述隔离区域63的部分，该部分包括在所述凹口处断开的第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的表面，所述第二阴极部分502位于所述第一阴极部分501的周边，所述第二阴极部分502与所述绝缘隔离层40不接触。
示例性的，所述显示基板还包括隔断结构，所述隔断结构可以设置于相邻的两个导电隔离柱30之间，所述隔断结构用于将与相邻的两个导电隔离柱30分别耦接的所述第二阴极部分502隔断，所述隔断结构也可以设置于导电隔离柱30和显示区域之间，用于将与导电隔离柱30和所述阴极层位于显示区域的部分分别耦接的第二阴极部分502隔断。
根据上述显示基板的具体结构可知，本公开实施例提供的显示基板中，在所述导电隔离柱30背向所述衬底基板10的一侧设置绝缘隔离层40，在所述绝缘隔离层40背向所述衬底基板10的一侧设置阴极层50，所述阴极层50在所述导电隔离柱30的凹口处被隔断为第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的一侧，所述第二阴极部分502在所述衬底基板10上的正投影的至少部分与所述绝缘隔离层40在所述衬底基板10上的正投影不交叠。
由于所述绝缘隔离层40具有绝缘性，且位于所述导电隔离柱30和所述第一阴极部分501之间，因此所述绝缘隔离层40能够将所述导电隔离柱30和所述第一阴极部分501之间绝缘，避免了以所述导电隔离柱30为媒介将所述第一阴极部分501和所述第二阴极部分502之间连通，避免了所述导电隔离柱30从所述第一阴极部分501接收到电信号。因此，本公开实施例提供的显示基板中，通过设置所述隔离区域63包括所述导电隔离柱30和所述绝缘隔离层40，有效降低了所述导电隔离柱30与传输电信号的阴极层50之间形成导通路径的可能性，从而有效改善了由于发生电化学腐蚀而导致的GDSH问题。
如图5所示，在一些实施例中，所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分具有坡度角a，a满足：a＞0°。
示例性的，a满足：0°＜a＜90°，但不仅限于此。例如：可以进一步限定a满足：20°＜a＜80°，30°＜a＜70°，40°＜a＜70°等。
示例性的，在所述绝缘隔离层40的形成过程中，所述绝缘隔离层40朝向所述衬底基板10的表面的形态由承载所述绝缘隔离层40的载体的表面形态决定，如：所述导电隔离柱30承载所述绝缘隔离层40，即所述绝缘隔离层40位于所述导电隔离柱30背向所述衬底基板10的表面，这种情况下，所述导电隔离柱30背向所述衬底基板10的表面形态，决定了所述绝缘隔离层40朝向所述衬底基板10的表面的形态。
示例性的，设置所述导电隔离柱30的隔离边缘部分具有坡度角a，所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分位于该隔离边缘部分上，所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分能够延续所述隔离边缘部分的形貌，也具有坡度角a。
示例性的，所述绝缘隔离层40的边界位于其承载体所形成的斜坡上。如：所述绝缘隔离层40的边界位于所述导电隔离柱30形成的斜坡上。
上述设置所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分具有的坡度角a＞0°，使得所述绝缘隔离层40的边界位于所述导电隔离柱30形成的斜坡上，这样有利于增加所述绝缘隔离层40的边缘部分的厚度，从而有效提升了所述绝缘隔离层40的边缘部分对所述导电隔离柱30和所述第一阴极部分501之间的隔离效果，从而更好的保证了所述导电隔离柱30与所述第一阴极部分501之间能够彻底绝缘，进而改善由于发生电化学腐蚀而导致的GDSH问题。
如图5、图6、图11和图12所示，在一些实施例中，所述绝缘隔离层40在所述衬底基板10上的正投影的边界与所述导电隔离柱30在所述衬底基板10上的正投影的边界至少部分重叠。
示例性的，所述绝缘隔离层40在所述衬底基板10上的正投影的边界与所述导电隔离柱30在所述衬底基板10上的正投影的边界大致重叠。需要说明的是，所述边界大致重叠，是在考虑工艺误差的情况下，尽量做到重叠。
在制作所述显示基板时，可以以所述绝缘隔离层40为掩膜，刻蚀形成所述导电隔离柱30，以使得所述绝缘隔离层40的边界与所述导电隔离柱30的边界大致平齐。需要说明的是，所述边界大致平齐，是在考虑工艺误差的情况下，尽量做到平齐。
如图1、图5、图6、图11和图12所示，在一些实施例中，所述显示基板还包括：至少一个功能结构20，所述功能结构20位于所述隔离区域63，且所述功能结构20的至少部分位于所述导电隔离柱30朝向所述衬底基板10的一侧，所述功能结构20在其周边形成段差，所述功能结构20背向所述衬底基板10的表面包括平面部分204和斜面部分205；
所述绝缘隔离层40的边界在所述衬底基板10上的正投影，与所述斜面部分205在所述衬底基板10上的正投影交叠。
示例性的，所述功能结构20围绕所述孔区域62设置，但不仅限于此。
示例性的，所述功能结构20中包括沿远离所述衬底基板10的方向依次层叠设置的至少一层膜层，例如：所述功能结构20中包括沿远离所述衬底基板10的方向依次层叠设置的第一绝缘层、第一导电图形201、第二绝缘层、第二导电图形202和第三绝缘层；所述第一绝缘层、所述第一导电图形、所述第二绝缘层、所述第二导电图形和所述第三绝缘层均可以与显示区域61的对应膜层在同一次构图工艺中同时形成，不需要增加额外的构图工艺。例如：所述第一导电图形可以与显示区域61中的第一栅金属层同层同材料制作，所述第二导电图形可以与显示区域61中的第二栅金属层同层同材料制作。需要说明的，附图中标记的203代表绝缘层，包括所述第一绝缘层、所述第二绝缘层和所述第三绝缘层，绝缘层的边界图中未示意。
示例性的，所述功能结构20的整体形成为凸起结构，其能够在周边产生段差。
示例性的，所述功能结构20背向所述衬底基板10的表面包括平面部分204和斜面部分205；所述斜面部分205在所述衬底基板10上的正投影，包围所述平面部分204在所述衬底基板10上的正投影，但不仅限于此。
示例性的，所述绝缘隔离层40的边界在所述衬底基板10上的正投影，与所述斜面部分205在所述衬底基板10上的正投影交叠，例如：所述绝缘隔离层40的边界可以位于所述斜面部分205的中间区域，但不仅限于此。
上述实施例提供的显示基板中，通过设置所述绝缘隔离层40的边界在所述衬底基板10上的正投影，与所述斜面部分205在所述衬底基板10上的正投影交叠，实现了所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分能够具有坡度角，且坡度角a＞0°，使得所述绝缘隔离层40的边界位于所述导电隔离柱30形成的斜坡上，这样有利于增加所述绝缘隔离层40的边缘部分的厚度，从而有效提升了所述绝缘隔离层40的边缘部分对所述导电隔离柱30和所述第一阴极部分501之间的隔离效果，从而更好的保证了所述导电隔离柱30与所述第一阴极部分501之间能够彻底绝缘，进而改善由于发生电化学腐蚀而导致的GDSH问题。
如图1至图6所示，在一些实施例中，所述绝缘隔离层40在所述衬底基板10上的正投影与所述平面部分204在所述衬底基板10上的正投影至少部分交叠。
示例性的，所述平面部分204在所述衬底基板10上的正投影位于所述绝缘隔离层40在所述衬底基板10上的正投影的内部。
上述设置方式使得所述导电隔离柱30和所述绝缘隔离层40均能够覆盖所述平面的至少部分，并能够将边界设置于所述斜面部分205，实现了所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分能够具有坡度角，且坡度角a＞0°，使得所述绝缘隔离层40的边界位于所述导电隔离柱30形成的斜坡上，这样有利于增加所述绝缘隔离层40的边缘部分的厚度，从而有效提升了所述绝缘隔离层40的边缘部分对所述导电隔离柱30和所述第一阴极部分501之间的隔离效果，从而更好的保证了所述导电隔离柱30与所述第一阴极部分501之间能够彻底绝缘，进而改善由于发生电化学腐蚀而导致的GDSH问题。
如图1至图6所示，在一些实施例中，所述功能结构包括沿远离所述衬底基板10的方向依次层叠设置的第一绝缘层、第一导电图形201、第二绝缘层、第二导电图形202和第三绝缘层；
所述第二导电图形202在所述衬底基板10上的正投影，位于所述第一导电图形201在所述衬底基板10上的正投影的内部，在平行于所述衬底基板10的方向上，所述第一导电图形201突出于所述第二导电图形202第一距离d，所述第一距离d满足：0.5μm≤d≤2μm。
示例性的，d可以取值：0.7μm、1μm、1.5μm、1.7μm等，但不仅限于此。
示例性的。所述第一导电图形201在所述衬底基板10上的正投影的边界，包围所述第二导电图形202在所述衬底基板10上的正投影。
上述设置d满足：0.5μm≤d≤2μm，使得所述第一导电图形201能够在所述第二导电图形202的周边任意方向均突出于0.5μm～2μm，这样有利于在所述第一导电图形201和所述第二导电图形202的周边形成斜坡，从而使得所述功能结构背向所述衬底基板的表面具有斜面部分。
如图7至图12所示，在一些实施例中，所述显示基板包括：至少两个功能结构20，相邻的所述功能结构20之间具有沟槽70，所述绝缘隔离层40的至少部分位于所述沟槽70内。
上述设置方式使得所述导电隔离柱30和所述绝缘隔离层40均能够覆盖所述沟槽70的至少部分，并能够将边界设置于所述斜面部分205，实现了所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分能够具有坡度角，且坡度角a＞0°，使得所述绝缘隔离层40的边界位于所述导电隔离柱30形成的斜坡上，这样有利于增加所述绝缘隔离层40的边缘部分的厚度，从而有效提升了所述绝缘隔离层40的边缘部分对所述导电隔离柱30和所述第一阴极部分501之间的隔离效果，从而更好的保证了所述导电隔离柱30与所述第一阴极部分501之间能够彻底绝缘，进而改善由于发生电化学腐蚀而导致的GDSH问题。
如图1至图6所示，在一些实施例中，所述导电隔离柱30包括沿远离所述衬底基板10的方向依次层叠设置的第一隔断层301、第二隔断层302和第三隔断层303，所述第一隔断层301的边界在所述衬底基板10上的正投影包围所述第二隔断层302在所述衬底基板10上的正投影；所述第一隔断层301在所述衬底基板10上的正投影与所述第三隔断层303在所述衬底基板10上的正投影重叠。
如图7至图12所示，在一些实施例中，所述导电隔离柱30包括沿远离所述衬底基板10的方向依次层叠设置的第一隔断层301、第二隔断层302和第三隔断层303，所述第一隔断层301的边界在所述衬底基板10上的正投影包围所述第二隔断层302在所述衬底基板10上的正投影；
所述第一隔断层301的边界在所述衬底基板10上的正投影包围所述第三隔断层303在所述衬底基板10上的正投影；和/或，所述第二隔断层302在所述衬底基板10上的正投影与所述第三隔断层303在所述衬底基板10上的正投影重叠。
示例性的，所述第一隔断层301采用金属Ti制作，所述第二隔断层302采用金属Al制作，所述第三隔断层303采用金属Ti制作，但不仅限于此。
示例性的，所述第一隔断层301和/或所述第三隔断层303的边缘突出于所述第二隔断层302的边缘，在所述导电隔离柱30的侧面形成凹口。
在设置所述绝缘隔离层40的至少部分位于所述沟槽70内的情况下，由于所述第三隔断层303与所述绝缘隔离层40相贴合，所述绝缘隔离层40的边缘部分具有坡度角，因此，所述第三隔断层303的边缘部分同样具有所述坡度角，且处于下方没有承载的上翘状态，这样在后续进行水洗工艺时，所述第三隔断层303的边缘部分会掉落，所述绝缘隔离层40的边缘部分会继续保留。由于所述第三隔断层303的边缘部分突出于所述第二隔断层302，因此，仍然能够保证有机发光功能层EL和阴极层50均在此处断开，而且，所述第三隔断层303的边缘部分掉落后，能够更好的保证所述第一阴极部分501与所述导电隔离柱30之间的绝缘性，从而更好的改善由于发生电化学腐蚀而导致的GDSH问题。
在一些实施例中，所述显示基板包括源漏金属层和有机平坦层，所述导电隔离柱30与所述源漏金属层同层同材料设置，所述绝缘隔离层40与所述有机平坦层同层同材料设置。
上述设置方式使得所述导电隔离柱30与所述源漏金属层能够在同一次构图工艺中同时形成，所述绝缘隔离层40与所述有机平坦层能够在同一次构图工艺中同时形成。因此，上述实施例提供的显示基板中，能够在不增加构图工艺流程的前提下，形成所述导电隔离柱30和所述绝缘隔离层40，从而能够在不影响产能和成本的前提下改善GDSH。
本公开实施例还提供了一种显示装置，包括上述实施例提供的显示基板。
需要说明的是，所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板等。
上述实施例提供的显示基板中，在所述导电隔离柱30背向所述衬底基板10的一侧设置绝缘隔离层40，在所述绝缘隔离层40背向所述衬底基板10的一侧设置阴极层50，所述阴极层50在所述导电隔离柱30的凹口处被隔断为第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的一侧，所述第二阴极部分502在所述衬底基板10上的正投影的至少部分与所述绝缘隔离层40在所述衬底基板10上的正投影不交叠。由于所述绝缘隔离层40具有绝缘性，且位于所述导电隔离柱30和所述第一阴极部分501之间，因此所述绝缘隔离层40能够将所述导电隔离柱30和所述第一阴极部分501之间绝缘，避免了以所述导电隔离柱30为媒介将所述第一阴极部分501和所述第二阴极部分502之间连通，避免了所述导电隔离柱30从所述第一阴极部分501接收到电信号。因此，上述实施例提供的显示基板中，通过设置所述隔离区域63包括所述导电隔离柱30和所述绝缘隔离层40，有效降低了所述导电隔离柱30与传输电信号的阴极层50之间形成导通路径的可能性，从而有效改善了由于发生电化学腐蚀而导致的GDSH问题。
本公开实施例提供的显示装置在包括上述显示基板时，同样具有上述有益效果，此处不再赘述。
本公开实施例还提供了一种显示基板的制作方法，用于制作上述实施例提供的显示基板；所述显示基板包括：显示区域61、孔区域62和隔离区域63，所述显示区域61的至少部分位于所述孔区域62的周边，所述隔离区域63的至少部分位于所述孔区域62和所述显示区域61之间；所述制作方法包括：
在所述隔离区域63制作导电隔离柱30和绝缘隔离层40；所述导电隔离柱30的侧面具有凹口；所述绝缘隔离层40位于所述导电隔离柱30背向所述显示基板的衬底基板10的一侧，所述导电隔离柱30在所述衬底基板10上的正投影，位于所述绝缘隔离层40在所述衬底基板10上的正投影的内部；
制作阴极层50，所述阴极层50包括第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的一侧，所述第二阴极部分502在所述衬底基板10上的正投影的至少部分与所述绝缘隔离层40在所述衬底基板10上的正投影不交叠，所述第一阴极部分501和所述第二阴极部分502在所述凹口处断开。
采用本公开实施例提供的制作方法制作的显示基板中，在所述导电隔离柱30背向所述衬底基板10的一侧设置绝缘隔离层40，在所述绝缘隔离层40背向所述衬底基板10的一侧设置阴极层50，所述阴极层50在所述导电隔离柱30的凹口处被隔断为第一阴极部分501和第二阴极部分502，所述第一阴极部分501位于所述绝缘隔离层40背向所述衬底基板10的一侧，所述第二阴极部分502在所述衬底基板10上的正投影的至少部分与所述绝缘隔离层40在所述衬底基板10上的正投影不交叠。由于所述绝缘隔离层40具有绝缘性，且位于所述导电隔离柱30和所述第一阴极部分501之间，因此所述绝缘隔离层40能够将所述导电隔离柱30和所述第一阴极部分501之间绝缘，避免了以所述导电隔离柱30为媒介将所述第一阴极部分501和所述第二阴极部分502之间连通，避免了所述导电隔离柱30从所述第一阴极部分501接收到电信号。因此，采用本公开实施例提供的制作方法制作的显示基板中，通过设置所述隔离区域63包括所述导电隔离柱30和所述绝缘隔离层40，有效降低了所述导电隔离柱30与传输电信号的阴极层50之间形成导通路径的可能性，从而有效改善了由于发生电化学腐蚀而导致的GDSH问题。
如图1至图12所示，在一些实施例中，在所述隔离区域63制作导电隔离柱30和绝缘隔离层40的步骤具体包括：
制作隔离柱过渡图形；
在所述隔离柱过渡图形背向所述衬底基板10的一侧制作绝缘隔离材料层，对所述绝缘隔离材料层进行构图工艺，形成绝缘隔离过渡层；
以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图，形成所述导电隔离柱30和所述绝缘隔离层40，所述绝缘隔离层40朝向所述衬底基板10的表面的边缘部分具有坡度角a，a满足：a＞0°。
示例性的，形成源漏金属材料层，对所述源漏金属材料层进行构图工艺，形成所述隔离柱过渡图形，以及显示基板中需要采用源漏金属材料层形成的导电结构。示例性的，所述绝缘隔离过渡层在所述衬底基板10上的正投影，位于所述隔离柱过渡图形在所述衬底基板10上的正投影的内部，所述隔离柱过渡图形在所述衬底基板10上的正投影的边界，包围所述绝缘隔离过渡层在所述衬底基板10上的正投影。
示例性的，所述源漏金属层采用沿远离所述衬底基板10的方向依次层叠设置的Ti膜层、Al膜层和Ti膜层，但不仅限于此。
示例性的，在所述隔离柱过渡图形背向所述衬底基板10的一侧形成整层的绝缘隔离材料层，对所述绝缘隔离材料层进行曝光、显影工艺，形成绝缘隔离过渡层。例如：采用有机绝缘层材料形成绝缘隔离材料层，但不仅限于此。
示例性的，以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行刻蚀，形成所述导电隔离柱30和所述绝缘隔离层40时，受到刻蚀工艺影响，所述绝缘隔离过渡层的边界部分会被刻蚀掉，从而形成所述绝缘隔离层40，然后继续以所述绝缘隔离层40为掩膜刻蚀形成所述导电隔离柱30。
需要说明的是，所形成的绝缘隔离层40的边界部分的厚度会大于所述绝缘隔离过渡层的边界部分的厚度。受到构图工艺的影响，所述绝缘隔离过渡层的边界部分的厚度较薄，所述绝缘隔离过渡层的边界部分的厚度小于其相邻部分的厚度，而该相邻部分在进行刻蚀工艺后会作为绝缘隔离层40的边界部分，因此，所形成的绝缘隔离层40的边界部分的厚度会大于所述绝缘隔离过渡层的边界部分的厚度。值得注意，所述绝缘隔离层40的边缘部分包括所述绝缘隔离层40的边界部分。
示例性的，在形成所述导电隔离柱30和所述绝缘隔离层40之后，制作阳极层，在刻蚀形成阳极层的过程中，刻蚀液会与所述Al膜层的侧面暴露出来的部分发生置换反应，在所述导电隔离柱30的侧面形成凹口。
上述实施例提供的制作方法中，以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行刻蚀，采用了自对准技术，使得所述绝缘隔离层40的边界至少能够与所述导电隔离柱30的边界平齐，从而很好的实现将所述导电隔离柱30与所述第二阴极部分502之间绝缘，从而有效改善了由于发生电化学腐蚀而导致的GDSH问题。
如图1至图12所示，在一些实施例中，所述制作方法还包括：
在所述绝缘隔离过渡层背向所述衬底基板10的一侧制作导电材料层；
以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图的步骤具体包括：
对所述导电材料层进行刻蚀工艺，形成导电图形；同时在该刻蚀工艺流程中进行过刻蚀，形成所述导电隔离柱30和所述绝缘隔离层40。
示例性的，所述导电材料层可以仅包括第二源漏金属层，也可以同时包括第二源漏金属层和第三源漏金属层，但不仅限于此。
示例性的，在对所述导电材料层进行刻蚀形成所述导电图形时，可以延长刻蚀时间，在形成所述导电图形的同时，以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行刻蚀，从而形成所述导电隔离柱30和所述绝缘隔离层40。
上述实施例提供的制作方法中，不需要增加额外的构图工艺，即可形成所述导电隔离柱30和所述绝缘隔离层40，使得所述绝缘隔离层40的边界至少能够与所述导电隔离柱30的边界平齐，从而很好的实现将所述导电隔离柱30与所述第二阴极部分502之间绝缘，从而有效改善了由于发生电化学腐蚀而导致的GDSH问题。
如图7至图12所示，在一些实施例中，所述显示基板包括：至少两个功能结构20，相邻的所述功能结构20之间具有沟槽70，所述绝缘隔离层40的至少部分位于所述沟槽70内；
在所述隔离区域63制作导电隔离柱30和绝缘隔离层40之后，进行水洗工艺。
在设置所述绝缘隔离层40的至少部分位于所述沟槽70内的情况下，由于所述第三隔断层303与所述绝缘隔离层40相贴合，所述绝缘隔离层40的边缘部分具有坡度角，因此，所述第三隔断层303的边缘部分同样具有所述坡度角，且处于下方没有承载的上翘状态，这样在后续进行水洗工艺时，所述第三隔断层303的边缘部分会掉落，所述绝缘隔离层40的边缘部分会继续保留。由于所述第三隔断层303的边缘部分突出于所述第二隔断层302，因此，仍然能够保证有机发光功能层EL和阴极层50均在此处断开，而且，所述第三隔断层303的边缘部分掉落后，能够更好的保证所述第一阴极部分501与所述导电隔离柱30之间的绝缘性，从而更好的改善由于发生电化学腐蚀而导致的GDSH问题。
需要说明的是，本公开实施例的“同层”可以指的是处于相同结构层上的膜层。或者例如，处于同层的膜层可以是采用同一成膜工艺形成用于形成特定图形的膜层，然后利用同一掩模板通过一次构图工艺对该膜层图案化所形成的层结构。根据特定图形的不同，一次构图工艺可能包括多次曝光、显影或刻蚀工艺，而形成的层结构中的特定图形可以是连续的也可以是不连续的。这些特定图形还可能处于不同的高度或者具有不同的厚度。
在本公开各方法实施例中，所述各步骤的序号并不能用于限定各步骤的先后顺序，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，对各步骤的先后变化也在本公开的保护范围之内。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于方法实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”、“耦接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (17)

  1. 一种显示基板，包括：显示区域、孔区域和隔离区域，所述显示区域的至少部分位于所述孔区域的周边，所述隔离区域的至少部分位于所述孔区域和所述显示区域之间；所述隔离区域包括：
    导电隔离柱，所述导电隔离柱的侧面具有凹口；
    绝缘隔离层，所述绝缘隔离层位于所述导电隔离柱背向所述显示基板的衬底基板的一侧，所述导电隔离柱在所述衬底基板上的正投影，位于所述绝缘隔离层在所述衬底基板上的正投影的内部；
    阴极层，所述阴极层包括第一阴极部分和第二阴极部分，所述第一阴极部分位于所述绝缘隔离层背向所述衬底基板的一侧，所述第二阴极部分在所述衬底基板上的正投影的至少部分与所述绝缘隔离层在所述衬底基板上的正投影不交叠，所述第一阴极部分和所述第二阴极部分在所述凹口处断开。
  2. 根据权利要求1所述的显示基板，其中，所述绝缘隔离层朝向所述衬底基板的表面的边缘部分具有坡度角a，a满足：a＞0°。
  3. 根据权利要求2所述的显示基板，其中，所述绝缘隔离层在所述衬底基板上的正投影的边界与所述导电隔离柱在所述衬底基板上的正投影的边界至少部分重叠。
  4. 根据权利要求2或3所述的显示基板，其中，所述显示基板还包括：至少一个功能结构，所述功能结构位于所述隔离区域，且所述功能结构的至少部分位于所述导电隔离柱朝向所述衬底基板的一侧，所述功能结构在其周边形成段差，所述功能结构背向所述衬底基板的表面包括平面部分和斜面部分；
    所述绝缘隔离层的边界在所述衬底基板上的正投影，与所述斜面部分在所述衬底基板上的正投影交叠。
  5. 根据权利要求4所述的显示基板，其中，所述绝缘隔离层在所述衬底基板上的正投影与所述平面部分在所述衬底基板上的正投影至少部分交叠。
  6. 根据权利要求5所述的显示基板，其中，所述平面部分在所述衬底基板上的正投影位于所述绝缘隔离层在所述衬底基板上的正投影的内部。
  7. 根据权利要求4所述的显示基板，其中，所述显示基板包括：至少两个功能结构，相邻的所述功能结构之间具有沟槽，所述绝缘隔离层的至少部分位于所述沟槽内。
  8. 根据权利要求1所述的显示基板，其中，所述导电隔离柱包括沿远离所述衬底基板的方向依次层叠设置的第一隔断层、第二隔断层和第三隔断层，所述第三隔断层的边界在所述衬底基板上的正投影包围所述第二隔断层在所述衬底基板上的正投影；所述第一隔断层的边界在所述衬底基板上的正投影包围所述第二隔断层在所述衬底基板上的正投影。
  9. 根据权利要求8所述的显示基板，其中，所述第一隔断层采用金属钛制作，所述第二隔断层采用金属铝制作，所述第三隔断层采用金属钛制作。
  10. 根据权利要求1所述的显示基板，其中，所述显示基板包括源漏金属层和有机平坦层，所述导电隔离柱与所述源漏金属层同层同材料设置，所述绝缘隔离层与所述有机平坦层同层同材料设置。
  11. 根据权利要求1所述的显示基板，其中，所述隔离区域包围所述孔区域，所述显示区域包围所述隔离区域；所述显示基板还包括：发光功能层，所述发光功能层从所述显示区域延伸至所述隔离区域，并在所述导电隔离柱的凹口处断开。
  12. 根据权利要求4所述的显示基板，其中，所述功能结构包括沿远离所述衬底基板的方向依次层叠设置的第一绝缘层、第一导电图形、第二绝缘层、第二导电图形和第三绝缘层；
    所述第二导电图形在所述衬底基板上的正投影，位于所述第一导电图形在所述衬底基板上的正投影的内部，在平行于所述衬底基板的方向上，所述第一导电图形突出于所述第二导电图形第一距离，所述第一距离d满足：0.5μm≤d≤2μm。
  13. 一种显示装置，包括如权利要求1～12中任一项所述的显示基板。
  14. 一种显示基板的制作方法，用于制作如权利要求1～12中任一项所述的显示基板；所述显示基板包括：显示区域、孔区域和隔离区域，所述显示区域的至少部分位于所述孔区域的周边，所述隔离区域的至少部分位于所述孔区域和所述显示区域之间；所述制作方法包括：
    在所述隔离区域制作导电隔离柱和绝缘隔离层；所述导电隔离柱的侧面具有凹口；所述绝缘隔离层位于所述导电隔离柱背向所述显示基板的衬底基板的一侧，所述导电隔离柱在所述衬底基板上的正投影，位于所述绝缘隔离层在所述衬底基板上的正投影的内部；
    制作阴极层，所述阴极层包括第一阴极部分和第二阴极部分，所述第一阴极部分位于所述绝缘隔离层背向所述衬底基板的一侧，所述第二阴极部分在所述衬底基板上的正投影的至少部分与所述绝缘隔离层在所述衬底基板上的正投影不交叠，所述第一阴极部分和所述第二阴极部分在所述凹口处断开。
  15. 根据权利要求14所述的显示基板的制作方法，其中，在所述隔离区域制作导电隔离柱和绝缘隔离层的步骤具体包括：
    制作隔离柱过渡图形；
    在所述隔离柱过渡图形背向所述衬底基板的一侧制作绝缘隔离材料层，对所述绝缘隔离材料层进行构图工艺，形成绝缘隔离过渡层；
    以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图，形成所述导电隔离柱和所述绝缘隔离层，所述绝缘隔离层朝向所述衬底基板的表面的边缘部分具有坡度角a，a满足：a＞0°。
  16. 根据权利要求15所述的显示基板的制作方法，其中，所述制作方法还包括：
    在所述绝缘隔离过渡层背向所述衬底基板的一侧制作导电材料层；
    以所述绝缘隔离过渡层为掩膜，对所述隔离柱过渡图形进行构图的步骤具体包括：
    对所述导电材料层进行刻蚀工艺，形成导电图形；同时在该刻蚀工艺流程中进行过刻蚀，形成所述导电隔离柱和所述绝缘隔离层。
  17. 根据权利要求14～16中任一项所述的显示基板的制作方法，其中，所述显示基板包括：至少两个功能结构，相邻的所述功能结构之间具有沟槽，所述绝缘隔离层的至少部分位于所述沟槽内；
    在所述隔离区域制作导电隔离柱和绝缘隔离层之后，进行水洗工艺。
PCT/CN2025/092258 2024-05-31 2025-04-30 显示基板及其制作方法、显示装置 Pending WO2025246787A1 (zh)

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