WO2025218378A1 - 发光器件和显示装置 - Google Patents

发光器件和显示装置

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Publication number
WO2025218378A1
WO2025218378A1 PCT/CN2025/080791 CN2025080791W WO2025218378A1 WO 2025218378 A1 WO2025218378 A1 WO 2025218378A1 CN 2025080791 W CN2025080791 W CN 2025080791W WO 2025218378 A1 WO2025218378 A1 WO 2025218378A1
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WIPO (PCT)
Prior art keywords
group
light
emitting device
doping
host
Prior art date
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PCT/CN2025/080791
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English (en)
French (fr)
Inventor
谭明丰
张继勇
王建
吕博文
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Publication of WO2025218378A1 publication Critical patent/WO2025218378A1/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/27—Combination of fluorescent and phosphorescent emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • the present disclosure belongs to the field of display technology, and particularly relates to a light-emitting device and a display apparatus.
  • OLEDs organic light-emitting diodes
  • a light-emitting device generally includes an anode, a cathode, and a light-emitting layer.
  • the light-emitting principle is to utilize the holes generated by the anode and the electrons generated by the cathode to recombine in the light-emitting layer to form excitons (such as singlet excitons and triplet excitons), thereby emitting light through exciton radiation transition.
  • light-emitting devices are affected by the characteristics of the light-emitting materials, and may have problems such as low internal quantum efficiency (IQE), low device efficiency, low lifespan, or low color saturation at high brightness, which are far from meeting the requirements of mass-produced products and therefore cannot be mass-produced.
  • IQE internal quantum efficiency
  • low device efficiency low device efficiency
  • low lifespan low color saturation at high brightness
  • the present disclosure aims to solve at least one of the technical problems existing in the prior art and provide a light emitting device and a display apparatus.
  • the technical solution adopted to solve the technical problem of the present disclosure is a light-emitting device, comprising a first electrode, a second electrode, and at least one light-emitting layer disposed between the first electrode and the second electrode;
  • the light-emitting layer includes a host material, a first doping material, and a second doping material doped together;
  • the first doping material is a phosphorescent material, and the second doping material is a fluorescent material;
  • the first doping material is an iridium complex, which is composed of a primary ligand, an auxiliary ligand, and an iridium ion; wherein the primary ligand includes at least phenyl and a phenyl derivative.
  • the iridium complex has the following general structural formula (1):
  • L 1 to L 3 in the general structural formula (I) are each independently selected from a substituted or unsubstituted C5-C30 carbocyclic group and a substituted or unsubstituted C1-C30 heterocyclic group, or L 1 to L 3 are each independently selected from an unsubstituted or at least one Q-substituted cyclopentadiene group, a cyclohexane group, a cyclohexene group, a phenyl group, a naphthalene group, an anthracene group, a phenanthrene group, a benzo[9,10]phenanthrene group, a pyrene group, a group, a furan group, a thiophene group, a thiorrole group, an indene group, a fluorene group, an indole group, a carbazole group, a benzofuran group, a dibenzofuran group,
  • n 1 to m 3 are each independently selected from any integer between 0 and 5;
  • n 1 to n 3 are each independently selected from any integer between 0 and 5;
  • R 1 to R 8 are each independently selected from any one or more combinations of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, thiol, sulfinyl, sulfonyl, and phosphino;
  • X, X 1 to X 6 are each independently selected from any one of BR, NR, PR, oxygen, sulfur, selenium, carbonyl, acyl, sulfur dioxide, CRR', SiRR', and GeRR'; wherein R and R' in BR, NR, PR, CRR', SiRR', and GeRR' are each independently selected from any one or more combinations of hydrogen, deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, thio, sulfinyl, sulfonyl, and phosphino; B in BR represents a boron atom; N in NR represents a nitrogen atom;
  • any adjacent substituents on the same ring group in the general structural formula (1) are joined or fused to form a ring.
  • the iridium complex comprises any one of the following structures:
  • triplet excitons formed by the host material and triplet excitons formed by the first dopant material both transfer fluorescence resonance energy to singlet states of the second dopant material to emit light.
  • the doping concentration of the host material is between 83% and 94.5%; the doping concentration of the host material is the ratio of the mass of the host material to the sum of the masses of the host material, the first doping material, and the second doping material;
  • the doping concentration of the first doping material is between 15% and 5%.
  • the doping concentration of the first doping material is the ratio of the mass of the main material to the sum of the masses of the main material, the first doping material and the second doping material.
  • the doping concentration of the second doping material is between 2% and 0.5%.
  • the doping concentration of the second doping material is the ratio of the mass of the main material to the sum of the masses of the main material, the first doping material and the second doping material.
  • a ratio of a spectral overlap area between the photoluminescence spectrum of the first dopant material and the absorption spectrum of the second dopant material to an area of the absorption spectrum of the second dopant material is greater than 50%.
  • the second doping material has the following general structural formula (II):
  • ring CY is a C5-C30 monocyclic group or a condensed ring group, or each independently represents a C5-C30 monoheterocyclic group or a condensed heterocyclic group, wherein the heteroatom is one or more of nitrogen, oxygen, and sulfur;
  • R 26 to R 30 each independently represent one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C2-C30 heteroaryl; and n represents an integer greater than or equal to 1.
  • the molecular structure of the second doping material is
  • E S1 (Host) ⁇ E S1 (Dopant1) > E S1 (Dopant2); wherein E S1 (Host) represents the lowest singlet excitation energy of the host material, E S1 (Dopant1) represents the lowest singlet excitation energy of the first dopant material, and the lowest singlet excitation energy of the second dopant material.
  • the host material includes a first host material and a second host material
  • the first host material is a hole transport type host material; the second host material is an electron transport type host material.
  • the ratio of the mass of the first host material to the mass of the second host material is between 1:9 and 5:5; or, the ratio of the mass of the second host material to the mass of the first host material is between 1:9 and 5:5.
  • the light-emitting device further includes a hole transport layer disposed on a side of the first electrode close to the light-emitting layer, and an electron transport layer disposed on a side of the second electrode close to the light-emitting layer.
  • the light-emitting layer includes a first light-emitting layer and a second light-emitting layer; the first light-emitting layer is closer to the first electrode than the second light-emitting layer;
  • the light-emitting device also includes a first hole transport layer arranged on the side of the first electrode close to the first light-emitting layer, an N-type doped charge generation layer and a P-type doped charge generation layer arranged on the side of the first light-emitting layer close to the second light-emitting layer, and an electron transport layer arranged on the side of the second electrode close to the second light-emitting layer.
  • the light emitting device is a green light emitting device.
  • an embodiment of the present disclosure further provides a display device comprising a light-emitting device as described in any one of the first aspects.
  • FIG1 is a schematic diagram of energy interaction of a light emitting device provided by an embodiment of the present disclosure
  • FIG2 is a schematic diagram of a film layer of a light-emitting device provided by an embodiment of the present disclosure
  • FIG3 is a schematic diagram of a horizontal emitting dipole and a vertical emitting dipole provided by an embodiment of the present disclosure
  • FIG4 is a schematic diagram of the normalized electroemission spectrum of a pure thin film of the iridium complex Ir-1 and the normalized absorption spectrum of a pure thin film of the fluorescent guest material GD-1 provided in an embodiment of the present disclosure;
  • FIG5 is a schematic diagram of a device film layer of a single-layer light-emitting layer provided in an embodiment of the present disclosure
  • FIG6 is a schematic diagram of the electroemission spectrum measured for the device corresponding to Example 2 in Table 3;
  • FIG7a and FIG7b are schematic diagrams showing the viewing angle characteristics of Example 4 in Table 3;
  • FIG8 is a schematic diagram of film layers of a series-connected light-emitting device provided in an embodiment of the present disclosure
  • FIG9 is a schematic diagram of the electroemission spectrum measured for the device corresponding to Example 5 in Table 5.
  • light-emitting devices can be divided into phosphorescent light-emitting devices and fluorescent light-emitting devices according to the different light-emitting modes.
  • the main difference between the two is whether the guest material of the light-emitting layer (that is, the doping material different from the host material) is a phosphorescent material or a fluorescent material.
  • traditional fluorescent materials have a narrow spectrum and high stability, but the intersystem transition (ISC) between the triplet state and the singlet state in traditional fluorescent materials is forbidden, so it is impossible to make the triplet exciton return to the ground state to emit light, and only the singlet exciton can be used to emit light. Therefore, the internal quantum efficiency (IQE) can only reach 25% in theory.
  • ISC intersystem transition
  • IQE internal quantum efficiency
  • phosphorescent materials can make both triplet excitons and singlet excitons return to the ground state and radiate light, the theoretical IQE can reach 100%.
  • metal complex phosphorescent materials are directly used as luminescent centers, they easily promote the formation of adducts and charge traps, resulting in poor device stability, thereby damaging the device life and efficiency.
  • the microsecond triplet excitons of phosphorescent materials easily lead to triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA), which will accelerate device degradation and low color saturation at high brightness.
  • TTA triplet-triplet annihilation
  • TPA triplet-polaron annihilation
  • the embodiment of the present disclosure provides a light-emitting device, wherein the light-emitting layer of the light-emitting device is composed of a main material, a first doping material and a second doping material.
  • the first doping material is a phosphorescent material
  • the second doping material is a fluorescent material.
  • FRET fluorescence resonance energy transfer
  • the light-emitting device in the light-emitting stage, under the action of an electric field, carriers are injected through the electrode and then transported to the light-emitting layer by the carrier transport layer, forming singlet excitons and triplet excitons on the main material, and through fluorescence resonance energy transfer (FRET), the light-emitting device generates a plurality of light-emitting elements, each of which is a singlet exciton and a triplet exciton.
  • Energy is transferred to the first dopant material via FRET (Resonance Energy Transfer) and Dexter Excitation Transfer (DET), with the horizontal emission dipole ratio ⁇ // of the first dopant material being between 80% and 100%.
  • a higher dipole strength facilitates FRET energy transfer of triplet excitons generated in the first dopant material to the singlet state of the second dopant material.
  • the singlet excitons rapidly decay radiatively to emit light, thereby improving the luminous efficiency of the light-emitting device.
  • FIG2 is a schematic diagram of film layers of a light-emitting device provided in an embodiment of the present disclosure.
  • the light-emitting device includes a first electrode 10, a second electrode 20, and at least one light-emitting layer (EML) disposed between the first electrode 10 and the second electrode 20.
  • EML light-emitting layer
  • the tandem light-emitting device includes at least two light-emitting layers (EML).
  • the light-emitting layer EML includes a host material, a first doping material, and a second doping material doped together.
  • the first doping material is a phosphorescent material
  • the second doping material is a fluorescent material.
  • the first doping material is a phosphorescent sensitizer material.
  • the second doping material is a traditional fluorescent material or a novel thermally activated delayed fluorescence (TADF) material.
  • the second doping material serves as the light-emitting material of the embodiment of the present disclosure. It should be noted that the thermally activated delayed fluorescence (TADF) material allows the non-radiative triplet excited state to be converted into a radiative singlet state by reverse intersystem crossing (RISC).
  • RISC reverse intersystem crossing
  • Figure 3 is a schematic diagram of the horizontal emission dipole and the vertical emission dipole provided in an embodiment of the present disclosure.
  • the first doping material doped in the present disclosure has a horizontal emission dipole ratio ⁇ // between 80% and 100%, and a high degree of horizontal dipole orientation, which facilitates FRET energy transfer of triplet excitons generated by the first doping material to the singlet state of the second doping material.
  • the singlet excitons rapidly radiatively decay and emit light, thereby facilitating improved luminous efficiency of the light-emitting device.
  • the light emitting device is an OLED device.
  • the first doping material provided herein while belonging to the category of phosphorescent materials, differs from traditional phosphorescent materials.
  • the first doping material is an iridium complex, which is composed of a primary ligand, an auxiliary ligand, and an iridium ion; wherein the primary ligand includes at least a phenyl group and a phenyl derivative.
  • the iridium ion can be a trivalent iridium ion.
  • Phenyl derivatives as phenyl-derived structures, are used to modify the original main ligand structure (the original main ligand structure can be understood as the main ligand in the traditional metal complex phosphorescent material) to constitute the main ligand disclosed herein.
  • the main ligand modified with the phenyl derivative increases the ⁇ - ⁇ interaction between the iridium complex and the host material, which is beneficial for the C2 axis of the iridium complex to be perpendicular to the substrate and the transition dipole moment (TDM) to be perpendicular to the C2 axis, thereby improving the horizontal emission dipole orientation degree (i.e., the horizontal emission dipole ratio ⁇ //), which is beneficial for the triplet excitons generated by the iridium complex to transfer FRET energy to the singlet state of the second doping material, and the singlet excitons quickly radiate and decay to emit light, thereby helping to improve the luminous efficiency of the light-emitting device.
  • TDM transition dipole moment
  • the iridium complex has the following general structural formula (1):
  • Structural formula (1) represents the primary ligand, represents an auxiliary ligand.
  • the main ligand is composed of phenyl derivatives wherein " ⁇ " indicates the attachment position of the phenyl derivative.
  • L1 to L3 in the general structural formula (I) are each independently selected from a substituted or unsubstituted C5 to C30 carbocyclic group, and a substituted or unsubstituted C1 to C30 heterocyclic group, or L1 to L3 are each independently selected from an unsubstituted or at least one Q-substituted cyclopentadiene group, a cyclohexane group, a cyclohexene group, a phenyl group, a naphthalene group, an anthracene group, a phenanthrene group, a benzo[9,10]phenanthrene group, a pyrene group, a group, a furan group, a thiophene group, a thiole group, an indene group, a fluorene group, an indole group, a carbazole group, a benzofuran group, a dibenzofuran group,
  • n 1 to m 3 are each independently selected from any integer between 0 and 5.
  • n 1 to n 3 are each independently selected from any integer between 0 and 5.
  • R 1 to R 8 are each independently selected from any one or more combinations of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, thiol, sulfinyl, sulfonyl, and phosphino.
  • B in “BR” represents a boron atom
  • C in CRR' represents a carbon atom
  • Si in SiRR' represents a silicon atom
  • Ge germanium atom
  • N represents a nitrogen atom.
  • any adjacent substituents on the same ring group in formula (1) are joined or fused to form a ring.
  • the iridium complex comprises any of the following structures:
  • the degree of horizontal emission dipole orientation can be represented by the horizontal emission dipole ratio ⁇ //.
  • Ir-ref.1 to Ir-ref.3 are existing sensitizer materials containing iridium atoms.
  • the iridium complex designed in the present disclosure has a higher degree of horizontal emission dipole orientation and a higher quantum yield (PLQY).
  • triplet excitons formed by the host material and triplet excitons formed by the first dopant material both transfer energy to the singlet state of the second dopant material via FRET, thereby enhancing FRET.
  • DET from the host material and the first dopant material to the second dopant material is suppressed, thereby also suppressing the direct capture of carriers by the second dopant material to emit light. Therefore, the host material and the first dopant material of the present disclosure transfer energy to the singlet state of the second dopant material substantially via FRET, resulting in rapid radiative decay and emission.
  • the doping concentration of the main material is between 83% and 94.5%; the doping concentration of the main material is the ratio of the mass of the main material to the sum of the masses of the main material, the first doping material and the second doping material; the doping concentration of the first doping material is between 15% and 5%; the doping concentration of the first doping material is the ratio of the mass of the main material to the sum of the masses of the main material, the first doping material and the second doping material; the doping concentration of the second doping material is between 2% and 0.5%; the doping concentration of the second doping material is the ratio of the mass of the main material to the sum of the masses of the main material, the first doping material and the second doping material.
  • the doping concentration of the main material is 89%
  • the doping concentration of the first doping material is 10%
  • the doping concentration of the second doping material is 1%.
  • the disclosed embodiments Compared to the doping concentrations of the host material and the first dopant material, the disclosed embodiments only incorporate a trace amount of the second dopant material (luminescent material). Due to the doping of only a trace amount of the second dopant material (luminescent material), FRET from the first dopant material to the second dopant material is enhanced, while DET from both the host material and the first dopant material to the second dopant material is suppressed. This also suppresses direct carrier capture and luminescence by the second dopant material. Consequently, the disclosed host material and the first dopant material essentially transfer FRET to the singlet state of the second dopant material, where the singlet state rapidly decays radiatively to produce luminescence.
  • the second dopant material luminescent material
  • the second doping material may or may not include boron atoms.
  • ring CY is a C5-C30 monocyclic group or a condensed ring group, or each independently represents a C5-C30 monocyclic group or a condensed heterocyclic group, wherein the heteroatom is one or more of nitrogen, oxygen, and sulfur;
  • R 26 to R 30 each independently represent one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C2-C30 heteroaryl; and n represents an integer greater than or equal to 1;
  • B represents a boron atom
  • N represents a nitrogen atom
  • the second doping material containing boron atoms includes but is not limited to any of the following structures:
  • the first doping material is an iridium complex Ir-1
  • the second doping material is a fluorescent guest material GD-1
  • Figure 4 is a schematic diagram of the normalized electroemission spectrum of the pure thin film of the iridium complex Ir-1 and the normalized absorption spectrum of the pure thin film of the fluorescent guest material GD-1 provided in an embodiment of the present disclosure.
  • 41 represents the normalized electroemission spectrum of the pure thin film of the iridium complex Ir-1
  • 42 represents the normalized absorption spectrum of the pure thin film of the fluorescent guest material GD-1.
  • the horizontal axis represents the wavelength of visible light (unit: nanometer nm), and the vertical axis represents the spectral intensity.
  • the second doping material not containing boron atoms may be:
  • N represents a nitrogen atom
  • O represents an oxygen atom
  • S represents a sulfur atom
  • the thickness of the light emitting layer EML is between 10 nm and 100 nm.
  • the glass transition temperature Tg of the main material is ⁇ 100°C.
  • Tg refers to the temperature at which the material changes from a glassy state to a highly elastic state during heating.
  • the glass transition temperature is an important physical property of amorphous polymer materials. This temperature range marks the lowest temperature at which the polymer chain segments inside the material begin to move. Below the glass transition temperature, the material behaves as a rigid solid with small deformation; above the glass transition temperature, the deformation of the material increases significantly, showing higher elasticity.
  • the glass transition temperature directly affects the performance and process performance of the material, such as mechanical strength, thermal stability and chemical resistance.
  • the glass transition temperature Tg of the present disclosure is ⁇ 100°C, and has higher thermal stability and chemical resistance.
  • the host material includes a first host material and a second host material; the first host material is a hole transport host material, thereby facilitating hole transport; the second host material is an electron transport host material, thereby facilitating electron transport.
  • the structural formula (III) of the hole transport host material is as follows:
  • R1-R8 are each independently selected from one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C2-C30 heteroaryl.
  • L1 and L2 are each independently selected from one or more combinations of a single bond, a substituted or unsubstituted C6-C30 arylene, and a substituted or unsubstituted C2-C30 heteroarylene.
  • Ar1 and Ar2 are each independently selected from one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C3 to C30 cycloalkyl, substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted carbazolyl, substituted or unsubstituted dibenzofuranyl, substituted or unsubstituted dibenzothiophenyl, substituted or unsubstituted C6-C30 arylamine, substituted or unsubstituted C1-C30 alkoxy, substituted or unsubstituted C3-C40 silyl, substituted or unsubstituted C1-C30 alkylthiol, substituted or unsubstituted C6-C30 arylthiol, halogen, halogen-containing group, cyano, hydroxyl, amino and nitro.
  • Exemplary hole transport host materials include but are not limited to any of the following:
  • the general structural formula (IV) of the electron transport host material is as follows:
  • R 9 to R 13 are each independently selected from any one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C2-C30 heteroaryl.
  • Ar 3 selects structure A or structure B.
  • structure A Structure B: Wherein, " ⁇ " indicates the position where the structure is connected to the general formula (IV).
  • X is independently selected from any one of oxygen (O), sulfur (S), NR, CR2 , SiR2 , and GeR2 .
  • R14 to R25 , R are independently selected from any one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C6-C50 aryl, and substituted or unsubstituted C2-C50 heteroaryl. Adjacent two of R14 to R25 can also form a ring, and the ring can be further modified by Q.
  • Q is selected from any one or more combinations of hydrogen, deuterium, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C6 to C50 aryl, and substituted or unsubstituted C2-C50 heteroaryl.
  • Exemplary electron transport host materials include but are not limited to any of the following:
  • the ratio of the mass of the first host material to the mass of the second host material is between 1:9 and 5:5; or the ratio of the mass of the second host material to the mass of the first host material is between 1:9 and 5:5.
  • the first host material is a hole-transporting host material
  • the second host material is an electron-transporting host material.
  • the mass ratio of the first host material to the second host material is between 1:9 and 5:5. Except for a ratio of 5:5, the host material's hole-transporting ability is greater than its electron-transporting ability, thereby effectively separating the carrier-transporting region, the exciton recombination center, and the luminescence center, resulting in a more stable device.
  • the first host material is a hole-transporting host material
  • the second host material is an electron-transporting host material.
  • the mass ratio of the second host material to the first host material is between 1:9 and 5:5. When the mass ratio is not 5:5, the host material's ability to transport electrons is greater than its ability to transport holes, thereby effectively separating the carrier transport region, exciton recombination center, and luminescence center, making the device more stable.
  • the doping concentration of the host material is 89%
  • the doping concentration of the first doping material is 10%
  • the doping concentration of the second doping material is 1%.
  • the obtained light-emitting layer EML is compared with the comparative example as shown in Table 2 below.
  • P-1(60):N-1(40) indicates that the mass ratio of the first host material to the second host material is 6:4.
  • ⁇ (nm) represents the wavelength of the light-emitting layer (EML), i.e., green light.
  • ⁇ ( ⁇ s) represents the lifetime of triplet excitons.
  • the triplet exciton lifetimes of the light-emitting layers (EMLs) formed in Comparative Examples 1-5 are relatively long, while those of the light-emitting layers (EMLs) formed in Examples 1-6 of the present disclosure are relatively short, demonstrating efficient FRET between the first dopant material (iridium complex) and the second dopant material (fluorescent material) designed in the present disclosure.
  • the short lifetime of the triplet excitons indicates that the host material and the first dopant material primarily transfer the excitons to the singlet state of the second dopant material via FRET, where the singlet state rapidly decays radiatively, resulting in luminescence, thus improving the device's luminescence efficiency.
  • Figure 5 is a schematic diagram of the device film layers of a single-layer light-emitting layer provided in an embodiment of the present disclosure.
  • the light-emitting device further includes a hole injection layer HIL, a hole transport layer HTL and an electron blocking layer HBL sequentially arranged on the side of the first electrode 10 close to the light-emitting layer EML, and an electron injection layer EIL, an electron transport layer ETL and a hole blocking layer HBL sequentially arranged on the side of the second electrode 20 close to the light-emitting layer EML.
  • the first electrode 10 is the anode of the light-emitting device.
  • the anode material can be a high-work-function electrode material. If the light-emitting device is a bottom-emitting device, the anode can be selected from, but not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), tin dioxide (SnO 2 ), zinc oxide (ZnO), and the like.
  • the thickness of the anode is between 80 nm and 200 nm.
  • the anode can be selected from, but not limited to, Ag/ITO, Ag/IZO, Ag/SnO 2 , Ag/ZnO, Al/ITO, and Al/IZO.
  • the thickness of the metal layer is between 80 nm and 100 nm
  • the thickness of the oxide layer is between 5 nm and 20 nm.
  • the average reflectivity of the anode in the visible light region is between 85% and 95%.
  • the hole injection layer (HIL) is mainly used to lower the hole injection barrier and improve the hole injection efficiency.
  • the material of the hole injection layer (HIL) can be selected from, but not limited to, HATCN, MnO 3 , CuPc, and other materials.
  • the material of the hole injection layer (HIL) can also be p-type doped with the hole transport material, such as NPB:F 4 TCNQ, TAPC:MnO 3 , and other materials.
  • the thickness of the hole injection layer (HIL) is between 5 nm and 20 nm, and the p-type doping concentration is between 0.5% and 10%.
  • the so-called "p-type doping concentration" can be understood as the ratio of the p-type doping mass to the sum of the p-type doping mass and the mass of the hole transport material.
  • the hole transport layer primarily transports holes generated by the anode.
  • Carbazole materials with high hole mobility can be used for the HTL, and it can be formed via evaporation.
  • the highest occupied molecular orbital (HOMO) energy level of the HTL material is between -5.2 eV and -5.6 eV.
  • the thickness of the HTL is between 80 nm and 140 nm.
  • the electron blocking layer (HBL) is primarily used to block electrons and excitons generated within the EML, as well as to transport holes.
  • the lowest triplet excited state (T1) energy of the material of the electron blocking layer (HBL) is greater than the lowest triplet excited state (T1) energy of the iridium (III) complex in the EML, and the difference between the two is greater than or equal to 0.2 eV, i.e., T1(EBL)-T1(Host) ⁇ 0.2 eV.
  • the highest occupied molecular orbital (HOMO) energy level of the material of the electron blocking layer (HBL) is deeper than the highest occupied molecular orbital (HOMO) energy level of the host material in the EML, and the difference between the two is less than or equal to 0.2 eV, i.e.,
  • the thickness of the electron blocking layer (HBL) is between 1 nm and 10 nm.
  • the hole-blocking layer (HBL) primarily blocks holes and excitons generated within the light-emitting layer (EML), while transferring electrons.
  • the lowest triplet excited state (T1) energy of the material of the hole-blocking layer (HBL) is greater than the lowest triplet excited state (T1) energy of the iridium (III) complex in the EML, i.e., T1(HBL)>T1(Host).
  • the lowest unoccupied molecular orbital (LUMO) energy level of the material of the hole-blocking layer (HBL) is shallower than the lowest unoccupied molecular orbital (LUMO) energy level of the host material in the EML, and the difference is less than or equal to 0.4 eV, i.e.,
  • the thickness of the hole-blocking layer (HBL) ranges from 1 nm to 10 nm.
  • the electron transport layer ETL is mainly used to transport electrons.
  • the material of the electron transport layer ETL includes an electron transport material and Liq doped together, and the doping mass ratio of the two is 10:1 to 1:1.
  • the thickness of the electron transport layer ETL is between 20nm and 70nm. Liq can be selected from the material
  • the electron transport material contains at least one
  • the electron injection layer is primarily used to lower the electron injection barrier and improve electron injection efficiency.
  • the EIL can be made of, but is not limited to, one or a combination of Yb, Li, LiF, NaCl, CsF, Li2O , BaO, and Liq.
  • the thickness of the EIL is between 0.5 nm and 2 nm.
  • the second electrode 20 is the cathode of the light-emitting device.
  • the cathode can be made of an electrode material with a low work function.
  • the material of the cathode can be selected from but not limited to Mg, Ag, Al, Al-Li, Ca, Mg:In, Mg:Ag and the like.
  • the thickness of the cathode is between 80nm and 100nm.
  • the thickness of the cathode is between 10nm and 20nm, and can be prepared using an alloy such as Mg:Ag, with the Mg:Ag mass adjustment ratio being between 3:7 and 1:9.
  • the light-emitting device further includes a light extraction layer (CPL) disposed on the side of the cathode facing away from the light-emitting layer (EML).
  • the light extraction layer (CPL) covers the cathode and is primarily used to improve light extraction efficiency and protect the cathode.
  • the thickness of the light extraction layer (CPL) is between 50 nm and 100 nm, and the material of the light extraction layer (CPL) preferably has a refractive index greater than 1.9 at a wavelength of 530 nm to transmit more light.
  • the light emitting device further includes an encapsulation layer disposed on a side of the light extraction layer CPL away from the cathode Cathode, wherein the encapsulation layer may be encapsulated by a sealant or a thin film.
  • the structure of a light-emitting device with a single-layer EML includes: ITO/Ag/ITO (150 nm) ⁇ HIL (10 nm) ⁇ HTL_1 (100 nm) ⁇ HTL_2 (25 nm) ⁇ EBL (5 nm) ⁇ EML (40 nm) ⁇ HBL (5 nm) ⁇ ETL (30 nm) ⁇ EIL (1.5 nm) ⁇ Mg:Ag (16.5 nm) ⁇ CPL (700 nm).
  • ITO/Ag/ITO 150 nm
  • HIL 10 nm
  • HTL_1 100 nm
  • HTL_2 25 nm
  • EBL 5 nm
  • EML 40 nm
  • HBL 5 nm
  • ETL 30
  • EIL 1.5 nm
  • the following examples illustrate the structure of the EML.
  • the only difference between Examples 1 to 8 and Comparative Examples 1 to 8 is the first doping material.
  • the first doping material of the present disclosure is selected from Ir-1, Ir-2, or Ir-3; the first doping material of the comparative examples is selected from Ir-ref.1, Ir-ref.2, or Ir-ref.3.
  • Device testing was performed on each of the aforementioned examples (i.e., Comparative Examples 1-8 and Examples 1-16). Test conditions included: using IVL testing equipment to measure the device's emission wavelength ( ⁇ ), voltage (V) at 15 mA/ cm2 (current density), and current efficiency (CE). Furthermore, using a lifetime tester, the device's luminance decay time (LT 95 ) from its initial value to 95% (luminance) at 1000 cd/ m2 was measured (in hours). See Table 3 below for details.
  • the iridium complex obtained by modifying the main ligand with phenyl or phenyl derivatives has a high horizontal emission dipole orientation, and the corresponding phosphor-sensitized fluorescent organic light-emitting diode device has better performance.
  • Figure 6 shows the electroemission spectrum measured for the device corresponding to Example 2 in Table 3.
  • the abscissa represents the wavelength of visible light (in nanometers), and the ordinate represents the spectral intensity of the normalized electroemission spectrum. This shows that the electroemission spectrum of the light-emitting device is narrower and more stable.
  • Figures 7a and 7b respectively represent schematic diagrams of the viewing angle characteristics of Example 4 in Table 3.
  • the horizontal axis represents the deflection angle
  • the vertical axis represents the brightness attenuation value.
  • the horizontal axis represents the deflection angle
  • the vertical axis represents the change in color coordinates.
  • curve 71 represents the viewing angle characteristics of the color corresponding to the color coordinates (0.134, 0.760)
  • curve 72 represents the viewing angle characteristics of the color corresponding to the color coordinates (0.146, 0.761)
  • curve 73 represents the viewing angle characteristics of the color corresponding to the color coordinates (0.165, 0.762)
  • curve 74 represents the viewing angle characteristics of the color corresponding to the color coordinates (0.191, 0.751). Specific parameters are detailed in Table 4.
  • CIE (x, y) represents color coordinates.
  • JNCD stands for color deviation, a metric used to measure the color accuracy of a display. It measures the smallest unit of color change discernible to the human eye, with one JNCD representing one unit. In the color coordinates, the distance between the "measured color” and “accurate color” points represents the JNCD value for the display.
  • L-decay represents brightness loss.
  • the light emitting device has good visual color deviation and brightness performance when emitting dark green light.
  • Figure 8 is a schematic diagram of the film layers of a tandem light-emitting device provided in an embodiment of the present disclosure.
  • the light-emitting layer EML includes a first light-emitting layer EML1 and a second light-emitting layer EML2; the first light-emitting layer EML1 is closer to the first electrode 10 than the second light-emitting layer EML2; the light-emitting device also includes a hole injection layer HIL, a first hole transport layer HTL1 and a first electron blocking layer EBL1, which are sequentially arranged on the side of the first electrode 10 close to the first light-emitting layer EML1, a first hole blocking layer HBL1, an N-type doped charge generation layer N-CGL, a P-type doped charge generation layer P-CGL, a second hole transport layer HTL2 and a second electron blocking layer EBL2, which are sequentially arranged on the side of the first light-emitting layer EML1 close to the second light-e
  • the first electrode 10 is the anode of the light-emitting device.
  • the material of the anode can be an electrode material with a high work function.
  • the anode can be selected from, but not limited to, materials such as indium tin oxide (ITO), indium zinc oxide (IZO), tin dioxide (SnO 2 ), and zinc oxide (ZnO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • SnO 2 tin dioxide
  • ZnO zinc oxide
  • the thickness of the anode is between 80 nm and 200 nm.
  • the anode can be selected from, but not limited to, materials such as Ag/ITO, Ag/IZO, Ag/SnO 2 , Ag/ZnO, Al/ITO, and Al/IZO.
  • the thickness of the metal layer is between 80 nm and 100 nm
  • the thickness of the oxide layer is between 5 nm and 20 nm.
  • the average reflectivity of the anode in the visible light region is between 85% and 95%.
  • the hole injection layer (HIL) is mainly used to lower the hole injection barrier and improve the hole injection efficiency.
  • the material of the hole injection layer (HIL) can be selected from, but not limited to, HATCN, MnO 3 , CuPc, and other materials.
  • the material of the hole injection layer (HIL) can also be p-type doped with the hole transport material, such as NPB:F 4 TCNQ, TAPC:MnO 3 , and other materials.
  • the thickness of the hole injection layer (HIL) is between 5nm and 20nm, and the p-type doping concentration is 0.5% to 3%.
  • the so-called "p-type doping concentration" can be understood as the ratio of the p-type doping mass to the sum of the p-type doping mass and the mass of the hole transport material.
  • the first hole transport layer HTL1 and the second hole transport layer HTL2 are both used to transport holes. Both the first hole transport layer HTL1 and the second hole transport layer HTL2 can be made of carbazole materials with high hole mobility. The thickness of the first hole transport layer HTL1 and the second hole transport layer HTL2 is between 10nm and 100nm.
  • Both the first electron blocking layer EBL1 and the second electron blocking layer EBL2 are used to block electrons and excitons generated within the light-emitting layer (EML), as well as to transport holes.
  • the thickness of each of the first and second electron blocking layers EBL1 and EBL2 is between 1 nm and 10 nm.
  • the material of the first or second electron blocking layer EBL1 or EBL2 can have the same or different molecular formula as the hole-transporting material in the light-emitting layer (EML).
  • the materials of the first light-emitting layer EML1 and the second light-emitting layer EML2 both include the host material, the first dopant material and the second dopant material as described above.
  • the thickness of the first light-emitting layer EML1 or the second light-emitting layer EML2 is between 30nm and 60nm.
  • the first hole blocking layer HBL1 and the second hole blocking layer HBL2 are used to block holes and excitons generated in the light-emitting layer EML and to transport electrons.
  • the thickness of the first hole blocking layer HBL1 or the second hole blocking layer HBL2 is between 1 nm and 10 nm.
  • the N-type doped charge generation layer (N-CGL) is made of an electron transport material doped with a low-work function active metal.
  • the active metal may include, but is not limited to, Li, Ca, and Yb.
  • the low-work function active metal doping ratio is between 0.6% and 2%, representing the ratio of the low-work function active metal mass to the total mass of the electron transport material and the doped low-work function active metal.
  • the thickness of the N-type doped charge generation layer (N-CGL) is between 10nm and 20nm.
  • the P-type doped charge generation layer (P-CGL) is made of a hole-transporting material doped with a P-type dopant, such as molybdenum oxide.
  • the P-type dopant ratio is between 5% and 15%, representing the ratio of the mass of the P-type dopant to the total mass of the hole-transporting material and the P-type dopant.
  • the thickness of the P-type doped charge generation layer (P-CGL) is between 10nm and 20nm.
  • the N-type doped charge generation layer (N-CGL) is an N-type organic semiconductor.
  • the P-type doped charge generation layer (P-CGL) is a P-type organic semiconductor.
  • the N-type doped charge generation layer (N-CGL) and the P-type doped charge generation layer (P-CGL) can form a P/N junction structure, thereby generating electrons and holes.
  • the N-type doped charge generation layer (N-CGL) injects electrons into the first hole blocking layer (HBL1), and the P-type doped charge generation layer (P-CGL) injects holes into the second hole transport layer (HTL2).
  • the electron transport layer ETL is mainly used to transport electrons.
  • the material of the electron transport layer ETL includes an electron transport material and Liq doped together, and the doping mass ratio of the two is 10:1 to 1:1.
  • the thickness of the electron transport layer ETL is between 10nm and 50nm. Liq can be selected from the material
  • the electron transport material contains at least one
  • the electron injection layer is primarily used to lower the electron injection barrier and improve electron injection efficiency.
  • the EIL can be made of, but is not limited to, one or a combination of Yb, Li, LiF, NaCl, CsF, Li2O , BaO, and Liq.
  • the thickness of the EIL is between 0.5 nm and 2 nm.
  • the second electrode 20 is the cathode of the light-emitting device.
  • the cathode can be made of an electrode material with a low work function.
  • the material of the cathode can be selected from but not limited to Mg, Ag, Al, Al-Li, Ca, Mg:In, Mg:Ag and the like.
  • the thickness of the cathode is between 80nm and 100nm.
  • the thickness of the cathode is between 10nm and 20nm, and can be prepared using an alloy such as Mg:Ag, with the Mg:Ag mass adjustment ratio being between 3:7 and 1:9.
  • the light-emitting device further includes a light extraction layer (CPL) disposed on the side of the cathode facing away from the light-emitting layer (EML).
  • the light extraction layer (CPL) covers the cathode and is primarily used to improve light extraction efficiency and protect the cathode.
  • the thickness of the light extraction layer (CPL) is between 50 nm and 100 nm, and the material of the light extraction layer (CPL) preferably has a refractive index greater than 1.9 at a wavelength of 530 nm to transmit more light.
  • the light emitting device further includes an encapsulation layer disposed on a side of the light extraction layer CPL away from the cathode Cathode, wherein the encapsulation layer may be encapsulated by a sealant or a thin film.
  • the device structure of comparative example 1 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-1:Ir-1:GD-1, 89.4%:10%:0.6%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (37nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-1:Ir-1:GD-1, 89.4%:10%:0.6%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg:Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of comparative example 2 of the series light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (N-1: Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (44nm) ⁇ EBL2 (5nm) ⁇ EML2 (N-1: Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of comparative example 3 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (mCBP: Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (42nm) ⁇ EBL2 (5nm) ⁇ EML2 (mCBP: Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • mCBP is the green light host material, and its chemical structure is the green light host material, and its chemical structure is
  • the device structure of Example 1 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-1 (60): N-1 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (40nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-1 (60): N-1 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 2 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (60): N-2 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (42nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (60): N-2 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 3 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-3 (60): N-3 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (40nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-3 (60): N-3 (40): Ir-1: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 4 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-4 (60): N-2 (40): Ir-2: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (42nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-4 (60): N-2 (40): Ir-2: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 5 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (60): N-3 (40): Ir-3: GD-2, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (40nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (60): N-3 (40): Ir-3: GD-1, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 6 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (50): N-3 (50): Ir-3: GD-2, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (41nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (50): N-3 (50): Ir-3: GD-2, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 7 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (40): N-3 (60): Ir-3: GD-2, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (42nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (40): N-3 (60): Ir-3: GD-2, 89.1%: 10%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 8 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (60): N-3 (40): Ir-3: GD-2, 84.1%: 15%: 0.9%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (41nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (60): N-3 (40): Ir-3: GD-2, 84.1%: 15%: 0.9%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of Example 9 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (60): N-3 (40): Ir-3: GD-2, 88.5%: 10%: 1.5%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (41nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (60): N-3 (40): Ir-3: GD-2, 88.5%: 10%: 1.5%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • the device structure of embodiment 10 of the tandem light-emitting device includes: ITO/Ag/ITO (150nm) ⁇ HIL (10nm) ⁇ HTL1 (30nm) ⁇ EBL1 (5nm) ⁇ EML1 (P-2 (60): N-3 (40): Ir-3: GD-2, 83.5%: 15%: 1.5%, 35nm) ⁇ HBL1 (5nm) ⁇ NCGL (15nm) ⁇ PCGL (10nm) ⁇ HTL2 (41nm) ⁇ EBL2 (5nm) ⁇ EML2 (P-2 (60): N-3 (40): Ir-3: GD-2, 83.5%: 15%: 1.5%, 35nm) ⁇ HBL2 (5nm) ⁇ ETL (35nm) ⁇ EIL (1nm) ⁇ Mg: Ag (1:9, 15nm) ⁇ CPL (80nm).
  • device testing was performed on each of the above examples (i.e., Comparative Examples 1-3 and Examples 1-10).
  • V device voltage
  • CE current efficiency
  • LT 95 luminance decay time from the initial value to 95% (in hours) was measured at 1000 cd/ m2 (luminance). See Table 3 below for details.
  • the optoelectronic performance of the top-emitting device is shown in Table 5 below.
  • the iridium complex obtained after modification of the main ligand with phenyl or phenyl derivatives has a high horizontal emission dipole orientation, which is conducive to the FRET energy transfer of the triplet excitons generated by the first dopant material to the singlet state of the second dopant material.
  • the singlet excitons quickly radiate and decay to emit light, thereby helping to improve the luminous efficiency of the light-emitting device.
  • an iridium complex and a fluorescent guest material are doped in the host material.
  • the horizontal emission dipole orientation of the iridium complex obtained after the main ligand is modified by phenyl or phenyl derivatives is high, which is conducive to the FRET energy transfer of the triplet excitons generated by the iridium complex to the singlet state of the fluorescent guest material.
  • the doping concentration of the host material is between 83% and 94.5%
  • the doping concentration of the iridium complex is between 15% and 5%
  • the doping concentration of the fluorescent guest material is between 2% and 0.5%.
  • the FRET of the iridium complex to the fluorescent guest material is enhanced, and the DET of the host material and the iridium complex to the fluorescent guest material is suppressed. In this way, the direct capture of carriers by the fluorescent guest material to emit light is also suppressed. Therefore, the host material and the iridium complex of the present disclosure are basically transferred to the singlet state of the fluorescent guest material through FRET, and the singlet state quickly decays and emits light, which is conducive to improving the luminous efficiency of the light-emitting device. In addition, the device life of the above embodiments 1 to 10 is excellent.
  • Figure 9 shows the electroemission spectrum measured for the device corresponding to Example 5 in Table 5.
  • the abscissa represents the wavelength of visible light (in nanometers), and the ordinate represents the spectral intensity of the normalized electroemission spectrum. This shows that the electroemission spectrum of the light-emitting device is narrow and highly stable.
  • the present disclosure adopts a combination of a first hole-transporting host material and a second electron-transporting host material to form the host material of the light-emitting layer EML, which is beneficial to improving the exciton utilization rate, expanding the exciton recombination area, and improving the carrier recombination state in the light-emitting layer EML, thereby improving the efficiency and life of the light-emitting device.
  • the present disclosure adopts a combination of a first host material of a hole-transporting type and a second host material of an electron-transporting type to form the host material of the light-emitting layer EML, which is beneficial to reducing the voltage of the light-emitting device and improving the efficiency and life of the light-emitting device.
  • a comparison of Examples 5 to 10 shows that the premixing ratio of the first host material and the second host material, the premixing ratio of the host material and the first dopant material, and the final doping ratio of the second dopant material in the light-emitting layer (EML) all affect the performance of the final light-emitting device. Therefore, scientifically and carefully adjusting the ratio relationship can also improve device performance.
  • EML light-emitting layer
  • the light-emitting device obtained by combining the structure shown in the present disclosure has lower voltage, higher efficiency and lifespan.
  • the light-emitting device is an OLED device.
  • the OLED displays currently in mass production can already achieve RGB color purity that meets the NTSC standard.
  • higher quality displays such as ultra-high resolution displays.
  • the BT.2020 standard for ultra-high color gamut has emerged, with red being (0.708, 0.292), green being (0.170, 0.797), and blue being (0.131, 0.046).
  • the current mainstream mass-produced luminescent materials use blue fluorescent materials and red and green phosphorescent materials, which can only achieve a coverage rate of 77%.
  • the large gap in color coordinates of green light devices is the most critical constraint for achieving the BT.2020 standard. Efficient and stable narrow-band green light devices are in urgent need of development. Therefore, the light-emitting device disclosed in the present invention is a green light-emitting device, which enables the green light-emitting device to achieve the BT.2020 standard.
  • the present disclosure manufactures an EML by doping a first doping material belonging to a phosphorescent material and a second doping material belonging to a fluorescent material into a host material, thereby achieving a 100% theoretical exciton favorability and maintaining a narrow-band intrinsic spectrum.
  • embodiments of the present disclosure further provide a display device comprising the light-emitting device of any of the aforementioned embodiments.
  • the display device may be, for example, a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, vehicle-mounted device, or any other product with a display function.
  • Other essential components of the display device are readily understood by those skilled in the art and are not detailed here, nor should they be construed as limitations of the present disclosure.

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Abstract

本公开提供一种发光器件和显示装置，属于显示技术领域。本公开的发光器件包括第一电极、第二电极和设置在第一电极和第二电极之间的至少一层发光层；发光层包括掺杂在一起的主体材料、第一掺杂材料和第二掺杂材料；第一掺杂材料为磷光材料，第二掺杂材料为荧光材料；第一掺杂材料的水平发射偶极子比在80％～100％之间；Θ//＝p∥/(p∥+p⊥)，其中，Θ//表示第一掺杂材料的水平发射偶极子比，p∥表示第一掺杂材料的水平发射偶极矩，p⊥表示第一掺杂材料的垂直发射偶极矩。

Description

发光器件和显示装置 技术领域
本公开属于显示技术领域，具体涉及一种发光器件和显示装置。
背景技术
近年来，随着显示技术的进步，人们对显示设备的各种性能也要求越来越高，例如有机发光二极管(Organic Light-Emitting Diode，OLED)由于其轻薄、自发光、相应速度快等特点，被广泛应用于显示领域。
发光器件一般包括阳极、阴极和发光层，其发光原理为利用阳极产生的空穴与阴极产生的电子在发光层复合形成激子(如单线态激子和三线态激子)，从而通过激子辐射跃迁进行发光。
然而，发光器件受到发光材料特性影响，会产生内量子效率(IQE)较低、或器件效率较低、或寿命较低、或高亮度时的色彩饱和度低等问题，而远远达不到量产产品的需求，因此无法实现量产。
发明内容
本公开旨在至少解决现有技术中存在的技术问题之一，提供一种发光器件和显示装置。
第一方面，解决本公开技术问题所采用的技术方案是一种发光器件，包括第一电极、第二电极和设置在所述第一电极和第二电极之间的至少一层发光层；
所述发光层包括掺杂在一起的主体材料、第一掺杂材料和第二掺杂材料；
所述第一掺杂材料为磷光材料，所述第二掺杂材料为荧光材料；
所述第一掺杂材料的水平发射偶极子比在80％～100％之间；Θ//＝p∥/(p∥+p⊥)，其中，Θ//表示所述第一掺杂材料的水平发射偶极子比，p∥表示所述第一掺杂材料的水平发射偶极矩，p⊥表示所述第一掺杂材料的垂直发射偶极矩。
在一些实施例中，所述第一掺杂材料为铱配合物，所述铱配合物经由主配体、辅助配体和铱离子构成；其中，所述主配体至少包括苯基和苯基衍生物。
在一些实施例中，所述铱配合物的结构通式(一)如下：
其中，表示主配体，表示辅助配体；
其中，所述结构通式(一)中的L1～L3均各自独立地选自经取代或未经取代的C5～C30碳环基团、以及经取代或未经取代的C1～C30杂环基团，或者L1～L3均各自独立地选自未经取代或至少一个Q取代的环戊二烯基团、环己烷基团、环己烯基团、苯基团、萘基团、蒽基团、菲基团、苯并[9,10]菲基团、芘基团、基团、呋喃基团、噻吩基团、噻咯基团、茚基团、芴基团、吲哚基团、咔唑基团、苯并呋喃基团、二苯并呋喃基团、苯并噻吩基团、二苯并噻吩基团、苯并噻咯基团、二苯并噻咯基团、氮杂芴基团、氮杂咔唑基团、氮杂二苯并呋喃基团、氮杂二苯并噻吩基团、氮杂二苯并噻咯基团、吡啶基团、嘧啶基团、吡嗪基团、哒嗪基团、三嗪基团、喹啉基团、异喹啉基团、喹喔啉基团、喹唑啉基团、菲咯啉基团、吡咯基团、吡唑基团、咪唑基团、三唑基团、唑基团、异唑基团、噻唑基团、异噻唑基团、二唑基团、噻二唑基团、苯并吡唑基团、苯并咪唑基团、苯并唑基团、苯并噻唑基团、苯并二唑基团、和苯并噻二唑基团；其中，Q为氘、-F、-CD3、-CD2H、-CDH2、-CF3、-CF2H、-CFH2、氰基、硝基、C1～C10烷基、C1～C10烷氧基、环戊基、环己基、环庚基、环辛基、金刚烷基、降莰烷基、降冰片烯基、环戊烯基、环己烯基、环庚烯基、苯基、萘基、吡啶基、嘧啶基、二苯并呋喃基、二苯并噻吩基中的任意一种；
m1～m3均各自独立地选自0-5中的任一整数；
n1～n3均各自独立地选自0-5中的任一整数；
R1～R8均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合；
X、X1～X6均各自独立地选自BR、NR、PR、氧、硫、硒、羰基、酰基、二氧化硫、CRR'、SiRR'、GeRR'中的任意一种；其中，BR、NR、PR、CRR'、SiRR'、GeRR'中的R和R'均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合；BR中的B表示硼原子；NR中的N表示氮原子；PR中的P表示磷原子；CRR'中的C表示碳原子；SiRR'中的Si表示硅原子；GeRR'中的Ge表示锗原子。
在一些实施例中，所述结构通式(一)中同一环基团上的任意相邻取代基接合或稠合成环。
在一些实施例中，所述铱配合物包括以下任意一种结构：

在一些实施例中，在发光阶段，所述主体材料形成的三线态激子和所述第一掺杂材料形成的三线态激子均通过荧光共振能量转移到所述第二掺杂材料的单线态发光。
在一些实施例中，所述主体材料的掺杂浓度在83％～94.5％之间；所述主体材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值；
所述第一掺杂材料的掺杂浓度在15％～5％之间；所述第一掺杂材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值；
所述第二掺杂材料的掺杂浓度在2％～0.5％之间；所述第二掺杂材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值。
在一些实施例中，所述第一掺杂材料的光致发光光谱与所述第二掺杂材料的吸收光谱之间的光谱重叠面积，与所述第二掺杂材料的吸收光谱的面积的比值大于50％。
在一些实施例中，所述第二掺杂材料的结构通式(二)如下：
其中，环CY为C5～C30的单环基团或者稠环基团，或者各自独立地为C5～C30的单杂环基团或者稠杂环基团，其中杂原子为氮、氧、硫中的一种或多种；R26～R30均各自独立地表示氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的C2～C30杂芳基中的一种或多种组合；n表示大于或等于1的整数。
在一些实施例中，所述第二掺杂材料的分子结构为
在一些实施例中，ET1(Host)＞ET1(Dopant1)＞ES1(Dopant2)；其中，ET1(Host)表示所述主体材料的最低三线态激发能量，ET1(Dopant1)表示所述第一掺杂材料的最低三线态激发能量，ET1(Dopant2)表示所述第二掺杂材料的最低三线态激发能量；
ES1(Host)≥ES1(Dopant1)＞ES1(Dopant2)；其中，ES1(Host)表示所述主体材料的最低单线态激发能量，ES1(Dopant1)所述第一掺杂材料的最低单线态激发能量，所述第二掺杂材料的最低单线态激发能量。
在一些实施例中，所述主体材料包括第一主体材料和第二主体材料；
所述第一主体材料为空穴传输型主体材料；所述第二主体材料为电子传输型主体材料。
在一些实施例中，所述第一主体材料的质量和所述第二主体材料的质量之比在1:9到5:5之间；或者，所述第二主体材料的质量和所述第一主体材料的质量之比在1:9到5:5之间。
在一些实施例中，所述发光器件还包括设置在所述第一电极靠近所述发光层一侧的空穴传输层，以及设置在所述第二电极靠近所述发光层一侧的电子传输层。
在一些实施例中，所述发光层包括第一发光层和第二发光层；所述第一发光层相比所述第二发光层更靠近所述第一电极；
所述发光器件还包括设置在所述第一电极靠近所述第一发光层一侧的第一空穴传输层，设置在所述第一发光层靠近所述第二发光层一侧的N型掺杂电荷产生层、P型掺杂电荷产生层，以及设置在所述第二电极靠近所述第二发光层一侧的电子传输层。
在一些实施例中，所述发光器件为绿色发光器件。
第二方面，本公开实施例还提供了一种显示装置，包括如第一方面中任一项所述的发光器件。
附图说明
图1为本公开实施例提供的一种发光器件的能量交互原理图；
图2为本公开实施例提供的一种发光器件的膜层示意图；
图3为本公开实施例提供的水平发射偶极子和垂直发射偶极子的示意图；
图4为本公开实施例提供的铱配合物Ir-1纯薄膜的归一化电致发射光谱和荧光客体材料GD-1纯薄膜的归一化吸收光谱的示意图；
图5为本公开实施例提供的单层发光层的器件膜层示意图；
图6为表三实施例2对应器件所测得的电致发射光谱示意图；
图7a和图7b分别表示表三实施例4的视角特性示意图；
图8为本公开实施例提供的串联发光器件膜层示意图；
图9为表五实施例5对应器件所测得的电致发射光谱示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本公开实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本公开的实施例的详细描述并非旨在限制要求保护的本公开的范围，而是仅仅表示本公开的选定实施例。基于本公开的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本公开中提及的“多个或者若干个”是指两个或两个以上。“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B这三种情况。字符“/”一般表示前后关联对象是一种“或”的关系。
在相关技术中，发光器件根据发光方式的不同可以分为磷光发光器件和荧光发光器件，二者区别主要在于发光层的客体材料(也即区别于主体材料的掺杂材料)是磷光材料还是荧光材料。其中，传统荧光材料的光谱窄、稳定性高，但是传统荧光材料中的三线态和单线态之间的系间跃迁(ISC)是禁阻的，因此无法使三线态激子回到基态发光，只能利用单线态激子发光，因此内量子效率(IQE)理论上只能达到25％。磷光材料由于可以使三线态激子和单线态激子都回到基态并辐射发光，因此理论上的IQE可以达到100％。但是，金属配合物磷光材料直接作为发光中心时，容易促进加合物和电荷陷阱的形成，导致器件稳定性较差，进而损害器件寿命和效率。此外，磷光材料的微秒级的三线态激子容易导致三线态-三线态湮灭(TTA)和三线态-极化子湮灭(TPA)，这将加速器件劣化，高亮度时的色彩饱和度低。
鉴于此，本公开实施例提供了一种发光器件，该发光器件的发光层由主体材料、第一掺杂材料和第二掺杂材料构成。其中，第一掺杂材料属于磷光材料，第二掺杂材料属于荧光材料。如图1所示，在发光阶段，发光器件在电场作用下，载流子通过电极注入再由载流子传输层传输到发光层，在主体材料上形成单重态激子和三重态激子，并通过荧光共振能量转移(Resonance Energy Transfer，FRET)和德克斯特激发转移(Dexter Excitation Transfer，DET)方式传递能量到第一掺杂材料，第一掺杂材料的水平发射偶极子比Θ//在80％～100％之间。偶极强度越高，越有利于第一掺杂材料所产生的三重态激子发生FRET能量转移到第二掺杂材料的单重态，单重态激子快速辐射衰减发光，从而有利于提高发光器件的发光效率。
图2为本公开实施例提供的一种发光器件的膜层示意图，如图2所示，发光器件包括第一电极10、第二电极20和设置在第一电极10和第二电极20之间的至少一层发光层EML。示例性的，若发光器件为串联发光器件，则该串联发光器件包括至少两层发光层EML。
发光层EML包括掺杂在一起的主体材料、第一掺杂材料和第二掺杂材料。第一掺杂材料为磷光材料，第二掺杂材料为荧光材料。可选地，第一掺杂材料为磷光敏化剂材料。第二掺杂材料为传统荧光材料或新型热活化延迟荧光(TADF)材料。第二掺杂材料作为本公开实施例的发光材料。需要说明的是，热活化延迟荧光(TADF)材料允许通过反向系间窜越(RISC)将非辐射三线态激发态转换为辐射单线态。
图3为本公开实施例提供的水平发射偶极子和垂直发射偶极子的示意图，如图3所示，第一掺杂材料的水平发射偶极子比在80％～100％之间；Θ//＝p∥/(p∥+p⊥)，其中，Θ//表示第一掺杂材料的水平发射偶极子比，p∥表示第一掺杂材料的水平发射偶极矩，p⊥表示第一掺杂材料的垂直发射偶极矩。
需要说明的是，水平发射偶极子比越高，表示材料的水平偶极子取向程度越高，越有利于三线态激子发生FRET能量转移到受体的单重态。本公开掺杂的第一掺杂材料的水平发射偶极子比Θ//在80％～100％之间，水平偶极子取向程度很高，有利于第一掺杂材料所产生的三线态激子发生FRET能量转移到第二掺杂材料的单线态，单线态激子快速辐射衰减发光，从而有利于提高发光器件的发光效率。
示例性的，发光器件为OLED器件。
在一些实施例中，本公开提供的第一掺杂材料虽然隶属于磷光材料这一类，但是区别于传统磷光材料，具体地：第一掺杂材料为铱配合物，铱配合物经由主配体、辅助配体和铱离子构成；其中，主配体至少包括苯基和苯基衍生物。示例性的，铱离子可以是三价铱离子。
这里，辅助配体的排布不会影响第一掺杂材料的水平发射偶极子比Θ//。苯基衍生物作为苯基衍生的结构，用于修饰原有主配体结构(该原有主配体结构可以理解为传统金属配合物磷光材料中的主配体)，构成本公开的主配体。采用苯基衍生物修饰后的主配体，增加了铱配合物与主体材料之间的π-π相互作用，有利于铱配合物的C2轴垂直于基板，跃迁偶极矩(TDM)垂直于C2轴，因此提高了水平发射偶极子取向程度(也即水平发射偶极子比Θ//)，有利于铱配合物所产生的三重态激子发生FRET能量转移到第二掺杂材料的单重态，单重态激子快速辐射衰减发光，从而有利于提高发光器件的发光效率。
在一些实施例中，铱配合物的结构通式(一)如下：
结构通式(一)。其中，表示主配体，表示辅助配体。
主配体由苯基衍生物修饰，以提高水平偶极子比。其中，“～”表示苯基衍生物的连接位置。
其中，结构通式(一)中的L1～L3均各自独立地选自经取代或未经取代的C5～C30碳环基团、以及经取代或未经取代的C1～C30杂环基团，或者L1～L3均各自独立地选自未经取代或至少一个Q取代的环戊二烯基团、环己烷基团、环己烯基团、苯基团、萘基团、蒽基团、菲基团、苯并[9,10]菲基团、芘基团、基团、呋喃基团、噻吩基团、噻咯基团、茚基团、芴基团、吲哚基团、咔唑基团、苯并呋喃基团、二苯并呋喃基团、苯并噻吩基团、二苯并噻吩基团、苯并噻咯基团、二苯并噻咯基团、氮杂芴基团、氮杂咔唑基团、氮杂二苯并呋喃基团、氮杂二苯并噻吩基团、氮杂二苯并噻咯基团、吡啶基团、嘧啶基团、吡嗪基团、哒嗪基团、三嗪基团、喹啉基团、异喹啉基团、喹喔啉基团、喹唑啉基团、菲咯啉基团、吡咯基团、吡唑基团、咪唑基团、三唑基团、唑基团、异唑基团、噻唑基团、异噻唑基团、二唑基团、噻二唑基团、苯并吡唑基团、苯并咪唑基团、苯并唑基团、苯并噻唑基团、苯并二唑基团、和苯并噻二唑基团；其中，Q为氘、-F、-CD3、-CD2H、-CDH2、-CF3、-CF2H、-CFH2、氰基、硝基、C1～C10烷基、C1～C10烷氧基、环戊基、环己基、环庚基、环辛基、金刚烷基、降莰烷基、降冰片烯基、环戊烯基、环己烯基、环庚烯基、苯基、萘基、吡啶基、嘧啶基、二苯并呋喃基、二苯并噻吩基中的任意一种。
其中，m1～m3均各自独立地选自0-5中的任一整数。
其中，n1～n3均各自独立地选自0-5中的任一整数。
其中，R1～R8均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合。
其中，X、X1～X6均各自独立地选自BR、NR、PR、氧(O)、硫(S)、硒(Se)、羰基(C＝O)、酰基(S＝O)、二氧化硫(SO2)、CRR'、SiRR'、GeRR'中的任意一种；其中，BR、NR、PR、CRR'、SiRR'、GeRR'中的R和R'均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合。需要说明的是，这里“BR”中的“B”表示硼原子；“NR”中的“N”表示氮原子；“PR”中的“P”表示磷原子；CRR'中的“C”表示碳原子；SiRR'中的“Si”表示硅原子；“GeRR'”中的“Ge”表示锗原子。
其中，N表示氮原子。
在一些实施例中，结构通式(一)中同一环基团上的任意相邻取代基接合或稠合成环。
在一些实施例中，铱配合物包括以下任意一种结构：

需要说明的是，水平发射偶极子取向的程度可用水平发射偶极子比Θ//表示。
将掺杂浓度为10％的铱配合物掺于主体材料中制作发光层EML，并用角度分辨光谱得到水平发射偶极子比Θ//，用带积分球的稳态-瞬态光谱测量仪测得量子产率(PLQY)，如表一所示。
表一
其中，Ir-ref.1～Ir-ref.3为现有包含铱原子的敏化剂材料。
由表一可知，本公开设计的铱配合物的水平发射偶极子取向程度更高，同时，具有更高的量子产率(PLQY)。
在一些实施例中，如图1所示，由于掺杂了第二掺杂材料，在发光阶段，主体材料形成的三线态激子和第一掺杂材料形成的三线态激子均通过FRET能量转移到第二掺杂材料的单线态发光，FRET得到增强；同时，由于FRET得到增强，因此主体材料和第一掺杂材料到第二掺杂材料的DET得到抑制，如此第二掺杂材料直接捕获载流子发光的情况也得到抑制。因此，本公开主体材料和第一掺杂材料基本通过FRET传递到第二掺杂材料的单重态，单重态快速辐射衰减而发光。
在一些实施例中，主体材料的掺杂浓度在83％～94.5％之间；主体材料的掺杂浓度为主体材料的质量，与主体材料、第一掺杂材料和第二掺杂材料的质量之和的比值；第一掺杂材料的掺杂浓度在15％～5％之间；第一掺杂材料的掺杂浓度为主体材料的质量，与主体材料、第一掺杂材料和第二掺杂材料的质量之和的比值；第二掺杂材料的掺杂浓度在2％～0.5％之间；第二掺杂材料的掺杂浓度为主体材料的质量，与主体材料、第一掺杂材料和第二掺杂材料的质量之和的比值。
可选地，主体材料的掺杂浓度为89％，第一掺杂材料的掺杂浓度为10％，第二掺杂材料的掺杂浓度为1％。
本公开实施例相比主体材料和第一掺杂材料的掺杂浓度，仅掺杂微量的第二掺杂材料(发光材料)。而由于仅掺杂微量的第二掺杂材料(发光材料)，因此第一掺杂材料到第二掺杂材料的FRET得到增强，主体材料和第一掺杂材料到第二掺杂材料的DET均得到抑制，如此第二掺杂材料直接捕获载流子而发光的情况也得到抑制，因此，本公开主体材料和第一掺杂材料基本通过FRET传递到第二掺杂材料的单重态，单重态快速辐射衰减而发光。
在一些实施例中，第二掺杂材料可以包含硼原子，也可以不包含硼原子。
其中，包含硼原子的第二掺杂材料的结构通式(二)如下：
其中，环CY为C5～C30的单环基团或者稠环基团，或者各自独立地为C5～C30的单杂环基团或者稠杂环基团，其中杂原子为氮、氧、硫中的一种或多种；R26～R30均各自独立地表示氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的C2～C30杂芳基中的一种或多种组合；n表示大于或等于1的整数；
其中，B表示硼原子；N表示氮原子。
示例性的，包含硼原子的第二掺杂材料包括但不限于以下任意一种结构：





示例性的，第一掺杂材料选用铱配合物Ir-1，第二掺杂材料选用荧光客体材料GD-1。图4为本公开实施例提供的铱配合物Ir-1纯薄膜的归一化电致发射光谱和荧光客体材料GD-1纯薄膜的归一化吸收光谱的示意图，如图4所示，其中41表示铱配合物Ir-1纯薄膜的归一化电致发射光谱，42表示荧光客体材料GD-1纯薄膜的归一化吸收光谱。其中，横坐标表示可见光的波长Wavelength(单位：纳米nm)，纵坐标表示光谱强度Intensity。如图4所示，铱配合物Ir-1纯薄膜的归一化电致发射光谱和荧光客体材料GD-1纯薄膜的归一化吸收光谱存在重叠，且第一掺杂材料的光致发光光谱与第二掺杂材料的吸收光谱之间的光谱重叠面积，与第二掺杂材料的吸收光谱的面积的比值大于50％。需要说明的是，给体的电致发射光谱和受体的吸收光谱的重叠面积越高，越有利于FRET能量转移，从而有利于提高发光器件的效率，同时有利于器件稳定。
示例性的，不包含硼原子的第二掺杂材料可以是：其中，N表示氮原子；O表示氧原子，S表示硫原子。
在一些实施例中，如图1所示，ET1(Host)＞ET1(Dopant1)＞ES1(Dopant2)；其中，ET1(Host)表示主体材料的最低三线态激发能量，ET1(Dopant1)表示第一掺杂材料的最低三线态激发能量，ET1(Dopant2)表示第二掺杂材料的最低三线态激发能量；ES1(Host)≥ES1(Dopant1)＞ES1(Dopant2)；其中，ES1(Host)表示主体材料的最低单线态激发能量，ES1(Dopant1)第一掺杂材料的最低单线态激发能量，第二掺杂材料的最低单线态激发能量。
在一些实施例中，发光层EML的厚度为10nm～100nm之间。
在一些实施例中，主体材料的玻璃化温度Tg≥100℃。需要说明的是，玻璃化温度(Tg)是指材料在加热过程中由玻璃态转变为高弹态的温度。玻璃化温度是非晶态高分子材料的一个重要物理特性，这个温度范围标志着材料内部高分子链段开始运动的最低温度。在玻璃化温度以下，材料表现为一种刚性固体，形变较小；而在玻璃化温度以上，材料的形变明显增加，表现出更高的弹性。玻璃化温度直接影响材料的使用性能和工艺性能，如机械强度、热稳定性和耐化学性等。本公开玻璃化温度Tg≥100℃，具有更高的热稳定性和耐化学性。
在一些实施例中，主体材料包括第一主体材料和第二主体材料；第一主体材料为空穴传输型主体材料，从而有利于空穴传输；第二主体材料为电子传输型主体材料，从而有利于电子传输。
其中，空穴传输型主体材料的结构通式(三)如下：
其中，R1～R8均各自独立地选自氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的C2～C30杂芳基中的一种或多种的组合。L1和L2均各自独立地选自单键、经取代或未经取代的C6～C30亚芳基、经取代或未经取代的C2～C30亚杂芳基中的一种或多种的组合。Ar1和Ar2均各自独立地选自氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C3到C30环烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的咔唑基、经取代或未经取代的二苯并呋喃基、经取代或未经取代的二苯并噻吩基、经取代或未经取代的C6～C30芳基胺基、经取代或未经取代的C1～C30烷氧基、经取代或未经取代的C3～C40硅烷基、经取代或未经取代的C1～C30烷基硫醇基、经取代或未经取代的C6～C30芳基硫醇基、卤素、含卤素的基团、氰基、羟基、氨基、硝基中的一种或多种的组合。
示例性的，“-L1-Ar1”和“-L2-Ar2”可以是如下基团：
示例性的，空穴传输型主体材料包括但不仅限于以下任意一种：
其中，电子传输型主体材料的结构通式(四)如下：
其中，R9～R13均各自独立地选自氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的C2～C30杂芳基中任意一种或多种组合。
Ar3选择结构A或结构B。其中，结构A：结构B：其中，“～”表示结构与结构通式(四)连接的位置。X独立地选自氧(O)、硫(S)、NR、CR2、SiR2、GeR2中的任意一种。其中，R14～R25，R独立地选自氢、氘、经取代或未经取代的C1～C20烷基、经取代或未经取代的C6～C50芳基、经取代或未经取代的C2～C50杂芳基中的任意一种或多种的组合。R14～R25中相邻两者也能成环，且该环能被Q进一步修饰。Q选自氢、氘、经取代或未经取代的C1～C20烷基、经取代或未经取代的C6到C50芳基、经取代或未经取代的C2～C50杂芳基中的任意一种或多种的组合。
示例性的，电子传输型主体材料包括但不仅限于以下任意一种：
在一些实施例中，第一主体材料的质量和第二主体材料的质量之比在1:9到5:5之间；或者，第二主体材料的质量和第一主体材料的质量之比在1:9到5:5之间。
示例性的，第一主体材料选用空穴传输型主体材料，第二主体材料选用电子传输型主体材料。第一主体材料的质量和第二主体材料的质量之比在1:9到5:5之间，在不包含5:5的情况下，主体材料传输空穴的能力大于传输电子的能力，从而使得载流子传输区域、激子复合中心和发光中心得到有效分离，使得器件更加稳定。
示例性的，第一主体材料选用空穴传输型主体材料，第二主体材料选用电子传输型主体材料。第二主体材料的质量和第一主体材料的质量之比在1:9到5:5之间，在不包含5:5的情况下，主体材料传输电子的能力大于传输空穴的能力，从而使得载流子传输区域、激子复合中心和发光中心得到有效分离，使得器件更加稳定。
示例性的，主体材料的掺杂浓度为89％，第一掺杂材料的掺杂浓度为10％，第二掺杂材料的掺杂浓度为1％。在这一掺杂比例下，得到的发光层EML，与对比例对比分析如下表二。
表二
其中，P-1(60):N-1(40)表示第一主体材料和第二主体材料的质量比为6:4。λ(nm)表示发光层EML发光波长，也即发绿光。τ(μs)表示三线态激子的寿命。
由表二可知，对比例1～5所形成的发光层EML的三线态激子的寿命较长，本公开实施例1～6所形成的发光层EML的三线态激子的寿命较短，说明本公开设计的第一掺杂材料(铱配合物)与第二掺杂材料(荧光材料)之间具有高效的FRET。三线态激子的寿命较短，说明主体材料和第一掺杂材料基本通过FRET传递到第二掺杂材料的单重态，而单线态快速辐射衰减而发光，提高了器件发光效率。
在一些实施例中，图5为本公开实施例提供的单层发光层的器件膜层示意图，如图5所示，发光器件还包括依次设置在第一电极10靠近发光层EML一侧的空穴注入层HIL、空穴传输层HTL和电子阻挡层HBL，以及依次设置在第二电极20靠近发光层EML一侧的电子注入层EIL、电子传输层ETL和空穴阻挡层HBL。
其中，第一电极10为发光器件的阳极Anode。示例性的，阳极Anode的材料可以选择高功函数的电极材料。在发光器件为底发射器件的情况下，阳极Anode可选自但不限于铟锡氧(ITO)、铟锌氧(IZO)、二氧化锡(SnO2)、氧化锌(ZnO)等材料。阳极Anode的厚度在80nm～200nm之间。在发光器件为顶发射器件的情况下，阳极Anode可选自但不限于Ag/ITO、Ag/IZO、Ag/SnO2、Ag/ZnO、Al/ITO、Al/IZO等材料。此时金属层(Ag或Al)的厚度在80nm～100nm之间，氧化物层(ITO、IZO、SnO2或ZnO)的厚度为5nm～20nm之间。阳极Anode可见光区域平均反射率在85％～95％之间。
空穴注入层HIL主要用于降低空穴注入势垒，提高空穴注入效率。示例性的，空穴注入层HIL的材料可以选择但不限于HATCN、MnO3、CuPc等材料。又或者，空穴注入层HIL的材料也可在空穴传输材料中进行p型掺杂，例如NPB:F4TCNQ，TAPC:MnO3等材料。空穴注入层HIL的厚度在5nm～20nm之间，p型掺杂浓度为0.5％～10％。这里，所谓“p型掺杂浓度”可以理解为p型掺杂质量与p型掺杂质量和空穴传输材料的质量之和的比值。
空穴传输层HTL主要用于传递阳极Anode产生的空穴。空穴传输层HTL可选用空穴迁移率较高的咔唑类材料，在工艺制备阶段可以通过蒸镀工艺制备形成。该空穴传输层HTL的材料的最高占据分子轨道HOMO能级在-5.2eV～-5.6eV之间。该空穴传输层HTL的厚度在80nm～140nm之间。
电子阻挡层HBL主要用于阻挡电子和发光层EML内产生的激子，以及传递空穴。该电子阻挡层HBL的材料的最低三线激发态(T1)能量大于发光层EML中的铱(III)配合物的最低三线激发态(T1)能量，且二者差值大于或等于0.2eV，也即T1(EBL)-T1(Host)≥0.2eV。该电子阻挡层HBL的材料的最高占据分子轨道HOMO能级比发光层EML中的主体材料的最高占据分子轨道HOMO能级深，且二者差值小于或等于0.2eV，也即∣HOMO(EBL)-HOMO(Host)∣≤0.2eV。电子阻挡层HBL的厚度在1nm～10nm之间。
图5所示发光层EML的具体结构、材料、参数的限定，参见上述相关发光层EML的详细说明，重复之处不再赘述。
空穴阻挡层HBL主要用于阻挡空穴和发光层EML内产生的激子，传递电子。该空穴阻挡层HBL的材料的最低三线激发态(T1)能量大于发光层EML中的铱(III)配合物的最低三线激发态(T1)能量，也即T1(HBL)＞T1(Host)。该空穴阻挡层HBL的材料的最低未占分子轨道LUMO能级比发光层EML中的主体材料的最低未占分子轨道LUMO能级浅，且差值小于或等于0.4eV，也即∣LUMO(HBL)-LUMO(Host)∣≤0.4eV。空穴阻挡层HBL的厚度在1nm～10nm之间。
电子传输层ETL主要用于传输电子。电子传输层ETL的材料包括掺杂在一起的电子传输材料和Liq，二者的掺杂质量比为10:1～1:1。电子传输层ETL的厚度在20nm～70nm之间。Liq可以选自材料电子传输材料的基团中含有至少一个
电子注入层EIL主要用于降低电子注入势垒，提高电子注入效率。示例性的，电子注入层EIL的材料可以选择但不限于Yb、Li、LiF、NaCl、CsF、Li2O、BaO、Liq等材料中的一种或多种组合。电子注入层EIL的厚度在0.5nm～2nm之间。
第二电极20为发光器件的阴极Cathode。示例性的，阴极Cathode可以选择低功函数的电极材料。例如，阴极Cathode的材料可以选择但不限于Mg、Ag、Al、Al-Li、Ca、Mg:In、Mg:Ag等材料。在发光器件为底发射器件的情况下，阴极Cathode的厚度在80nm～100nm之间。在发光器件为顶发射器件的情况下，阴极Cathode的厚度在10nm～20nm之间，且可采用诸如Mg:Ag的合金制备，Mg:Ag质量调节比例在3:7～1:9之间。
示例性的，在发光器件为顶发射器件的情况下，如图5所示，发光器件还包括设置在阴极Cathode背离发光层EML一侧的光取出层CPL。其中，光取出层CPL覆盖阴极Cathode，主要用于提高光取出效率和保护阴极Cathode。该光取出层CPL的厚度在50nm～100nm之间，优选该光取出层CPL的材料在波长为530nm下的折射率大于1.9，以透射更多的光。
示例性的，发光器件还包括设置在光取出层CPL背离阴极Cathode一侧的封装层。其中，封装层可采用框胶封装，也可采用薄膜封装。
示例性的，一种单层发光层EML的发光器件的结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL_1(100nm)→HTL_2(25nm)→EBL(5nm)→EML(40nm)→HBL(5nm)→ETL(30nm)→EIL(1.5nm)→Mg:Ag(16.5nm)→CPL(700nm)。其中，发光层EML的结构包括如下几种示例。
对比例1：P-1(60):N-1(40):Ir-ref.1:GD-1(89％:10％:1％)。
对比例2：P-1(60):N-1(40):Ir-ref.2:GD-1(89％:10％:1％)。
对比例3：P-1(60):N-1(40):Ir-ref.3:GD-1(89％:10％:1％)。
对比例4：P-1(50):N-1(50):Ir-ref.1:GD-1(89％:10％:1％)。
对比例5：P-1(40):N-1(60):Ir-ref.2:GD-1(89％:10％:1％)。
对比例6：P-2(60):N-3(40):Ir-ref.3:GD-2(89％:10％:1％)。
对比例7：P-3(60):N-2(40):Ir-ref.1:GD-3(89.2％:10％:0.8％)。
对比例8：P-3(60):N-3(40):Ir-ref.1:GD-2(88％:12％:1％)。
实施例1：P-1(60):N-1(40):Ir-1:GD-1(89％:10％:1％)。
实施例2：P-1(60):N-1(40):Ir-2:GD-1(89％:10％:1％)。
实施例3：P-1(60):N-1(40):Ir-3:GD-1(89％:10％:1％)。
实施例4：P-1(50):N-1(50):Ir-1:GD-1(89％:10％:1％)。
实施例5：P-1(40):N-1(60):Ir-2:GD-1(89％:10％:1％)。
实施例6：P-2(60):N-3(40):Ir-3:GD-2(89％:10％:1％)。
实施例7：P-3(60):N-2(40):Ir-1:GD-3(89.2％:10％:0.8％)。
实施例8：P-3(60):N-3(40):Ir-1:GD-2(88％:12％:1％)。
实施例9：P-1(60):N-1(40):Ir-1:GD-4(89％:10％:1％)。
实施例10：P-1(60):N-1(40):Ir-2:GD-5(89％:10％:1％)。
实施例11：P-1(60):N-1(40):Ir-3:GD-6(89％:10％:1％)。
实施例12：P-1(60):N-1(40):Ir-1:GD-7(89％:10％:1％)。
实施例13：P-1(60):N-1(40):Ir-2:GD-8(89％:10％:1％)。
实施例14：P-1(60):N-1(40):Ir-3:GD-9(89％:10％:1％)。
实施例15：P-1(60):N-1(40):Ir-1:GD-10(89％:10％:1％)。
实施例16：P-1(60):N-1(40):Ir-2:GD-11(89％:10％:1％)。
上述，实施例1～8与对比例1～8的区别仅在于第一掺杂材料的不同。本公开的第一掺杂材料选自Ir-1、Ir-2或Ir-3；对比例第一掺杂材料选自Ir-ref.1、Ir-ref.2或Ir-ref.3。
分别对上述各个示例(也即对比例1～8、实施例1～16)进行器件测试。期间测试条件包括：使用IVL测试设备获得器件发光波长(λ)、在15mA/cm2(电流密度)下的电压(V)，电流效率(CE)。以及，使用寿命测试设备获得器件在1000cd/m2(亮度)条件下，测量器件亮度由初始值衰减到95％的时间即LT95，单位为小时，具体参见下述表三所示。
表三
由表三可知，苯基或苯基衍生物修饰主配体后得到的铱配合物的水平发射偶极子取向高，相应的磷光剂敏化的荧光有机发光二极管器件性能更优异。
示例性的，图6为表三实施例2对应器件所测得的电致发射光谱示意图，如图6所示，其中，横坐标表示可见光的波长Wavelength(单位：纳米nm)，纵坐标表示归一化电致发射光谱的光谱强度Intensity。由此可见，发光器件的电致发射光谱较窄、稳定性更高。
示例性的，图7a和图7b分别表示表三实施例4的视角特性示意图，如图7a所示，横坐标表示偏转角度，纵坐标表示亮度衰减值。如图7b所示，横坐标表示偏转角度，纵坐标表色坐标的变化。其中，曲线71表示色坐标(0.134,0.760)对应颜色的视角特性，曲线72表示色坐标(0.146,0.761)对应颜色的视角特性，曲线73表示色坐标(0.165,0.762)对应颜色的视角特性，曲线74表示色坐标(0.191,0.751)对应颜色的视角特性。具体参数详见表四。
表四
其中，CIE(x,y)表示色坐标。JNCD表示色偏，是指表示一块屏幕色准的一个指标，以人的肉眼可以区分色彩变化的最小单位，1个单位就称为1JNCD。在色坐标中，“实测颜色”和“准确颜色”两点之间的距离数值，就是该屏幕的JNCD的数值。L-decay表示亮度衰减。
由表四可知，发光器件在发出深绿光时的视角色偏和亮度表现良好。
在一些实施例中，图8为本公开实施例提供的串联发光器件膜层示意图，如图8所示，发光层EML包括第一发光层EML1和第二发光层EML2；第一发光层EML1相比第二发光层EML2更靠近第一电极10；发光器件还包括依次设置在第一电极10靠近第一发光层EML1一侧的空穴注入层HIL、第一空穴传输层HTL1和第一电子阻挡层EBL1，依次设置在第一发光层EML1靠近第二发光层EML2一侧的第一空穴阻挡层HBL1、N型掺杂电荷产生层N-CGL、P型掺杂电荷产生层P-CGL、第二空穴传输层HTL2和第二电子阻挡层EBL2，以及依次设置在第二电极20靠近第二发光层EML2一侧的电子注入层EIL、电子传输层ETL和第二空穴阻挡层HBL2。
其中，第一电极10为发光器件的阳极Anode。示例性的，阳极Anode的材料可以选择高功函数的电极材料。在发光器件为底发射器件的情况下，阳极Anode可选自但不限于铟锡氧(ITO)、铟锌氧(IZO)、二氧化锡(SnO2)、氧化锌(ZnO)等材料。阳极Anode的厚度在80nm～200nm之间。在发光器件为顶发射器件的情况下，阳极Anode可选自但不限于Ag/ITO、Ag/IZO、Ag/SnO2、Ag/ZnO、Al/ITO、Al/IZO等材料。此时金属层(Ag或Al)的厚度在80nm～100nm之间，氧化物层(ITO、IZO、SnO2或ZnO)的厚度为5nm～20nm之间。阳极Anode可见光区域平均反射率在85％～95％之间。
空穴注入层HIL主要用于降低空穴注入势垒，提高空穴注入效率。示例性的，空穴注入层HIL的材料可以选择但不限于HATCN、MnO3、CuPc等材料。又或者，空穴注入层HIL的材料也可在空穴传输材料中进行p型掺杂，例如NPB:F4TCNQ，TAPC:MnO3等材料。空穴注入层HIL的厚度在5nm～20nm之间，p型掺杂浓度为0.5％～3％。这里，所谓“p型掺杂浓度”可以理解为p型掺杂质量与p型掺杂质量和空穴传输材料的质量之和的比值。
第一空穴传输层HTL1和第二空穴传输层HTL2均用于传递空穴。第一空穴传输层HTL1和第二空穴传输层HTL2均可选用空穴迁移率较高的咔唑类材料。第一空穴传输层HTL1和第二空穴传输层HTL2的厚度均在10nm～100nm之间。
第一电子阻挡层EBL1和第二电子阻挡层EBL2均用于阻挡电子和发光层EML内产生的激子，以及传递空穴。第一电子阻挡层EBL1和第二电子阻挡层EBL2的厚度均在1nm～10nm之间。第一电子阻挡层EBL1的材料或第二电子阻挡层EBL2的材料，与发光层EML(第一发光层EML1和第二发光层EML2)中空穴传输型材料的分子式可以相同，也可以不同。
第一发光层EML1的材料和第二发光层EML2的材料均包括如上所示的主体材料、第一掺杂材料和第二掺杂材料。第一发光层EML1的厚度或第二发光层EML2的厚度在30nm～60nm之间。
第一空穴阻挡层HBL1和第二空穴阻挡层HBL2均用于阻挡空穴以及发光层EML内产生的激子，以及传输电子。第一空穴阻挡层HBL1的厚度或第二空穴阻挡层HBL2的厚度为1nm～10nm之间。
N型掺杂电荷产生层N-CGL的材料为电子传输类材料并掺杂低功函活泼金属。其中，活泼金属可以包括但不限于Li、Ca、Yb等材料。低功函活泼金属的掺杂比例在0.6％～2％之间，是指低功函活泼金属的质量与电子传输类材料并掺杂低功函活泼金属总质量的比值。N型掺杂电荷产生层N-CGL的厚度在10nm～20nm之间。
P型掺杂电荷产生层P-CGL的材料为空穴传输类材料并掺杂P型掺杂剂，例如氧化钼等形成。其中，P型掺杂剂的掺杂比例在5％～15％之间，是指P型掺杂剂的质量与空穴传输类材料并掺杂P型掺杂剂总质量的比值。P型掺杂电荷产生层P-CGL的厚度在10nm～20nm之间。
示例性的，N型掺杂电荷产生层N-CGL，也即N型有机半导体。P型掺杂电荷产生层P-CGL，也即P型有机半导体。N型掺杂电荷产生层N-CGL和P型掺杂电荷产生层P-CGL可以形成P/N结结构，从而形成电子和空穴。N型掺杂电荷产生层N-CGL将电子注入第一空穴阻挡层HBL1，P型掺杂电荷产生层P-CGL将空穴注入第二空穴传输层HTL2。
电子传输层ETL主要用于传输电子。电子传输层ETL的材料包括掺杂在一起的电子传输材料和Liq，二者的掺杂质量比为10:1～1:1。电子传输层ETL的厚度在10nm～50nm之间。Liq可以选自材料电子传输材料的基团中含有至少一个
电子注入层EIL主要用于降低电子注入势垒，提高电子注入效率。示例性的，电子注入层EIL的材料可以选择但不限于Yb、Li、LiF、NaCl、CsF、Li2O、BaO、Liq等材料中的一种或多种组合。电子注入层EIL的厚度在0.5nm～2nm之间。
第二电极20为发光器件的阴极Cathode。示例性的，阴极Cathode可以选择低功函数的电极材料。例如，阴极Cathode的材料可以选择但不限于Mg、Ag、Al、Al-Li、Ca、Mg:In、Mg:Ag等材料。在发光器件为底发射器件的情况下，阴极Cathode的厚度在80nm～100nm之间。在发光器件为顶发射器件的情况下，阴极Cathode的厚度在10nm～20nm之间，且可采用诸如Mg:Ag的合金制备，Mg:Ag质量调节比例在3:7～1:9之间。
示例性的，在发光器件为顶发射器件的情况下，如图8所示，发光器件还包括设置在阴极Cathode背离发光层EML一侧的光取出层CPL。其中，光取出层CPL覆盖阴极Cathode，主要用于提高光取出效率和保护阴极Cathode。该光取出层CPL的厚度在50nm～100nm之间，优选该光取出层CPL的材料在波长为530nm下的折射率应大于1.9，以透射更多的光。
示例性的，发光器件还包括设置在光取出层CPL背离阴极Cathode一侧的封装层。其中，封装层可采用框胶封装，也可采用薄膜封装。
串联发光器件的对比例1的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-1:Ir-1:GD-1,89.4％:10％:0.6％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(37nm)→EBL2(5nm)→EML2(P-1:Ir-1:GD-1,89.4％:10％:0.6％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的对比例2的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(N-1:Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(44nm)→EBL2(5nm)→EML2(N-1:Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的对比例3的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(mCBP:Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(42nm)→EBL2(5nm)→EML2(mCBP:Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。其中，mCBP为绿光主体材料，其化学结构式为
串联发光器件的实施例1的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-1(60):N-1(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(40nm)→EBL2(5nm)→EML2(P-1(60):N-1(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例2的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(60):N-2(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(42nm)→EBL2(5nm)→EML2(P-2(60):N-2(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例3的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-3(60):N-3(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(40nm)→EBL2(5nm)→EML2(P-3(60):N-3(40):Ir-1:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例4的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-4(60):N-2(40):Ir-2:GD-1,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(42nm)→EBL2(5nm)→EML2(P-4(60):N-2(40):Ir-2:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例5的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(60):N-3(40):Ir-3:GD-2,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(40nm)→EBL2(5nm)→EML2(P-2(60):N-3(40):Ir-3:GD-1,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例6的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(50):N-3(50):Ir-3:GD-2,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(41nm)→EBL2(5nm)→EML2(P-2(50):N-3(50):Ir-3:GD-2,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例7的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(40):N-3(60):Ir-3:GD-2,89.1％:10％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(42nm)→EBL2(5nm)→EML2(P-2(40):N-3(60):Ir-3:GD-2,89.1％:10％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例8的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(60):N-3(40):Ir-3:GD-2,84.1％:15％:0.9％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(41nm)→EBL2(5nm)→EML2(P-2(60):N-3(40):Ir-3:GD-2,84.1％:15％:0.9％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例9的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(60):N-3(40):Ir-3:GD-2,88.5％:10％:1.5％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(41nm)→EBL2(5nm)→EML2(P-2(60):N-3(40):Ir-3:GD-2,88.5％:10％:1.5％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
串联发光器件的实施例10的器件结构包括：ITO/Ag/ITO(150nm)→HIL(10nm)→HTL1(30nm)→EBL1(5nm)→EML1(P-2(60):N-3(40):Ir-3:GD-2,83.5％:15％:1.5％,35nm)→HBL1(5nm)→NCGL(15nm)→PCGL(10nm)→HTL2(41nm)→EBL2(5nm)→EML2(P-2(60):N-3(40):Ir-3:GD-2,83.5％:15％:1.5％,35nm)→HBL2(5nm)→ETL(35nm)→EIL(1nm)→Mg:Ag(1:9,15nm)→CPL(80nm)。
示例性的，分别对上述各个示例(也即对比例1～3、实施例1～10)进行器件测试。期间测试条件包括：使用IVL测试设备获得器件在15mA/cm2(电流密度)下的电压(V)，电流效率(CE)。以及，使用寿命测试设备获得器件在1000cd/m2(亮度)条件下，测量器件亮度由初始值衰减到95％的时间即LT95，单位为小时，具体参见下述表三。顶发射器件的光电性能，参见下述表五。
表五
由表五可知，苯基或苯基衍生物修饰主配体后得到的铱配合物的水平发射偶极子取向高，有利于第一掺杂材料所产生的三重态激子发生FRET能量转移到第二掺杂材料的单重态，单重态激子快速辐射衰减发光，从而有利于提高发光器件的发光效率。
本公开实施例在主体材料中掺杂铱配合物和荧光客体材料，苯基或苯基衍生物修饰主配体后得到的铱配合物的水平发射偶极子取向高，有利于铱配合物所产生的三重态激子发生FRET能量转移到荧光客体材料的单重态。同时，主体材料的掺杂浓度在83％～94.5％之间，铱配合物的掺杂浓度在15％～5％之间，荧光客体材料的掺杂浓度在2％～0.5％之间。由于仅掺杂微量的荧光客体材料(发光材料)，因此铱配合物到荧光客体材料的FRET得到增强，主体材料和铱配合物到荧光客体材料的DET均得到抑制，如此荧光客体材料直接捕获载流子而发光的情况也得到抑制，因此，本公开主体材料和铱配合物基本通过FRET传递到荧光客体材料的单重态，单重态快速辐射衰减而发光，从而有利于提高发光器件的发光效率。另外，上述实施例1～10器件寿命表现优异。
示例性的，图9为表五实施例5对应器件所测得的电致发射光谱示意图，如图9所示，其中，横坐标表示可见光的波长Wavelength(单位：纳米nm)，纵坐标表示归一化电致发射光谱的光谱强度Intensity。由此可见，发光器件的电致发射光谱较窄、稳定性更高。
根据上述串联发光器件中对比例1、对比例2和实施例1的对比分析可知，本公开采用空穴传输型的第一主体材料和电子传输型的第二主体材料组合形成发光层EML的主体材料，有利于提高激子利用率，扩大激子复合区域，改善发光层EML中载流子复合状态，从而提升发光器件的效率和寿命。
根据上述串联发光器件中对比例3、实施例1～10对比分析可知，相比发光层EML的传统主体材料mCBP，本公开采用空穴传输型的第一主体材料和电子传输型的第二主体材料组合形成发光层EML的主体材料，有利于降低发光器件电压，提升发光器件的效率和寿命。
根据实施例5～10的对比可知，发光层EML中的第一主体材料和第二主体材料的预混合比例、主体材料与第一掺杂材料的预混合比例、以及最终第二掺杂材料的掺杂比例，均会影响最终发光器件的器件性能，因此科学谨慎地调整比例关系，亦能够改善器件性能。
由上述测试结果可知，本公开所示结构搭配得到的发光器件具有较低的电压、具有较高的效率和寿命。
在一些实施例中，发光器件为OLED器件。目前已经量产的OLED显示器已经可以达到符合NTSC标准的RGB色彩纯度。然而，人们对更高品质显示器，例如超高分辨率显示器的需求日益增长。超高色域的BT.2020标准随之产生，其红色为(0.708,0.292)，绿色为(0.170,0.797)，蓝色为(0.131,0.046)。然而，目前主流的量产发光材料采用蓝色荧光材料和红、绿色的磷光材料，只能实现77％的覆盖率。其中绿光器件色坐标差距大，是实现BT.2020标准的最关键制约因素。高效稳定的窄带绿光器件亟待开发。因此，本公开的发光器件为绿色发光器件，能够使得绿色发光器件实现BT.2020标准。
本公开通过将属于磷光材料的第一掺杂材料和属于荧光材料的第二掺杂材料掺入主体材料中制作发光层EML，既能达到100％的理论激子利于率，又能保持窄带的本征光谱。
另外，本公开实施例还提供了一种显示装置，其包括上述实施例中任一项的发光器件。该显示装置例如可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、车载设备等任何具有显示功能的产品。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (17)

  1. 一种发光器件，其特征在于，包括第一电极、第二电极和设置在所述第一电极和第二电极之间的至少一层发光层；
    所述发光层包括掺杂在一起的主体材料、第一掺杂材料和第二掺杂材料；
    所述第一掺杂材料为磷光材料，所述第二掺杂材料为荧光材料；
    所述第一掺杂材料的水平发射偶极子比在80％～100％之间；Θ//＝p∥/(p∥+p⊥)，其中，Θ//表示所述第一掺杂材料的水平发射偶极子比，p∥表示所述第一掺杂材料的水平发射偶极矩，p⊥表示所述第一掺杂材料的垂直发射偶极矩。
  2. 根据权利要求1所述的发光器件，其特征在于，所述第一掺杂材料为铱配合物，所述铱配合物经由主配体、辅助配体和铱离子构成；其中，所述主配体至少包括苯基和苯基衍生物。
  3. 根据权利要求2所述的发光器件，其特征在于，所述铱配合物的结构通式(一)如下：
    其中，表示
    主配体，表示辅助配体；
    其中，所述结构通式(一)中的L1～L3均各自独立地选自经取代或未经取代的C5～C30碳环基团、以及经取代或未经取代的C1～C30杂环基团，或者L1～L3均各自独立地选自未经取代或至少一个Q取代的环戊二烯基团、环己烷基团、环己烯基团、苯基团、萘基团、蒽基团、菲基团、苯并[9,10]菲基团、芘基团、基团、呋喃基团、噻吩基团、噻咯基团、茚基团、芴基团、吲哚基团、咔唑基团、苯并呋喃基团、二苯并呋喃基团、苯并噻吩基团、二苯并噻吩基团、苯并噻咯基团、二苯并噻咯基团、氮杂芴基团、氮杂咔唑基团、氮杂二苯并呋喃基团、氮杂二苯并噻吩基团、氮杂二苯并噻咯基团、吡啶基团、嘧啶基团、吡嗪基团、哒嗪基团、三嗪基团、喹啉基团、异喹啉基团、喹喔啉基团、喹唑啉基团、菲咯啉基团、吡咯基团、吡唑基团、咪唑基团、三唑基团、唑基团、异唑基团、噻唑基团、异噻唑基团、二唑基团、噻二唑基团、苯并吡唑基团、苯并咪唑基团、苯并唑基团、苯并噻唑基团、苯并二唑基团、和苯并噻二唑基团；其中，Q为氘、-F、-CD3、-CD2H、-CDH2、-CF3、-CF2H、-CFH2、氰基、硝基、C1～C10烷基、C1～C10烷氧基、环戊基、环己基、环庚基、环辛基、金刚烷基、降莰烷基、降冰片烯基、环戊烯基、环己烯基、环庚烯基、苯基、萘基、吡啶基、嘧啶基、二苯并呋喃基、二苯并噻吩基中的任意一种；
    m1～m3均各自独立地选自0-5中的任一整数；
    n1～n3均各自独立地选自0-5中的任一整数；
    R1～R8均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合；
    X、X1～X6均各自独立地选自BR、NR、PR、氧、硫、硒、羰基、酰基、二氧化硫、CRR'、SiRR'、GeRR'中的任意一种；其中，BR、NR、PR、CRR'、SiRR'、GeRR'中的R和R'均各自独立地选自氢、氘、卤基、烷基、环烷基、杂烷基、芳烷基、烷氧基、芳氧基、氨基、硅烷基、烯基、环烯基、杂烯基、炔基、芳基、杂芳基、酰基、羰基、羧酸、酯、腈、异腈、硫基、亚磺酰基、磺酰基、膦基中的任意一种或多种的组合；BR中的B表示硼原子；NR中的N表示氮原子；PR中的P表示磷原子；CRR'中的C表示碳原子；SiRR'中的Si表示硅原子；GeRR'中的Ge表示锗原子。
  4. 根据权利要求3所述的发光器件，其特征在于，所述结构通式(一)中同一环基团上的任意相邻取代基接合或稠合成环。
  5. 根据权利要求3所述的发光器件，其特征在于，所述铱配合物包括以下任意一种结构：

  6. 根据权利要求1所述的发光器件，其特征在于，在发光阶段，所述主体材料形成的三线态激子和所述第一掺杂材料形成的三线态激子均通过荧光共振能量转移到所述第二掺杂材料的单线态发光。
  7. 根据权利要求6所述的发光器件，其特征在于，所述主体材料的掺杂浓度在83％～94.5％之间；所述主体材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值；
    所述第一掺杂材料的掺杂浓度在15％～5％之间；所述第一掺杂材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值；
    所述第二掺杂材料的掺杂浓度在2％～0.5％之间；所述第二掺杂材料的掺杂浓度为所述主体材料的质量，与所述主体材料、所述第一掺杂材料和第二掺杂材料的质量之和的比值。
  8. 根据权利要求1～7中任一项所述的发光器件，其特征在于，所述第一掺杂材料的光致发光光谱与所述第二掺杂材料的吸收光谱之间的光谱重叠面积，与所述第二掺杂材料的吸收光谱的面积的比值大于50％。
  9. 根据权利要求8所述的发光器件，其特征在于，所述第二掺杂材料的结构通式(二)如下：
    其中，环CY为C5～C30的单环基团或者稠环基团，或者各自独立地为C5～C30的单杂环基团或者稠杂环基团，其中杂原子为氮、氧、硫中的一种或多种；R26～R30均各自独立地表示氢、氘、经取代或未经取代的C1～C30烷基、经取代或未经取代的C6～C30芳基、经取代或未经取代的C2～C30杂芳基中的一种或多种组合；n表示大于或等于1的整数。
  10. 根据权利要求8所述的发光器件，其特征在于，所述第二掺杂材料的分子结构为
  11. 根据权利要求6所述的发光器件，其特征在于，
    ET1(Host)＞ET1(Dopant1)＞ES1(Dopant2)；其中，ET1(Host)表示所述主体材料的最低三线态激发能量，ET1(Dopant1)表示所述第一掺杂材料的最低三线态激发能量，ET1(Dopant2)表示所述第二掺杂材料的最低三线态激发能量；
    ES1(Host)≥ES1(Dopant1)＞ES1(Dopant2)；其中，ES1(Host)表示所述主体材料的最低单线态激发能量，ES1(Dopant1)所述第一掺杂材料的最低单线态激发能量，所述第二掺杂材料的最低单线态激发能量。
  12. 根据权利要求1所述的发光器件，其特征在于，所述主体材料包括第一主体材料和第二主体材料；
    所述第一主体材料为空穴传输型主体材料；所述第二主体材料为电子传输型主体材料。
  13. 根据权利要求12所述的发光器件，其特征在于，所述第一主体材料的质量和所述第二主体材料的质量之比在1:9到5:5之间；或者，所述第二主体材料的质量和所述第一主体材料的质量之比在1:9到5:5之间。
  14. 根据权利要求1～7中任一项所述的发光器件，其特征在于，所述发光器件还包括设置在所述第一电极靠近所述发光层一侧的空穴传输层，以及设置在所述第二电极靠近所述发光层一侧的电子传输层。
  15. 根据权利要求1～7中任一项所述的发光器件，其特征在于，所述发光层包括第一发光层和第二发光层；所述第一发光层相比所述第二发光层更靠近所述第一电极；
    所述发光器件还包括设置在所述第一电极靠近所述第一发光层一侧的第一空穴传输层，依次设置在所述第一发光层靠近所述第二发光层一侧的N型掺杂电荷产生层、P型掺杂电荷产生层，以及设置在所述第二电极靠近所述第二发光层一侧的电子传输层。
  16. 根据权利要求1～7中任一项所述的发光器件，其特征在于，所述发光器件为绿色发光器件。
  17. 一种显示装置，其特征在于，包括如权利要求1～16中任一项所述的发光器件。
PCT/CN2025/080791 2024-04-19 2025-03-05 发光器件和显示装置 Pending WO2025218378A1 (zh)

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Publication number Priority date Publication date Assignee Title
JP2015163693A (ja) * 2014-01-31 2015-09-10 国立大学法人 東京大学 発光材料、発光材料の製造方法、発光素子、及び発光デバイス
CN111755611A (zh) * 2019-03-28 2020-10-09 三星显示有限公司 有机发光器件和电子设备
CN118234273A (zh) * 2024-04-19 2024-06-21 京东方科技集团股份有限公司 发光器件和显示装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015163693A (ja) * 2014-01-31 2015-09-10 国立大学法人 東京大学 発光材料、発光材料の製造方法、発光素子、及び発光デバイス
CN111755611A (zh) * 2019-03-28 2020-10-09 三星显示有限公司 有机发光器件和电子设备
CN118234273A (zh) * 2024-04-19 2024-06-21 京东方科技集团股份有限公司 发光器件和显示装置

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