WO2025200879A1 - 基板电镀方法和装置以及可形变扩散板 - Google Patents

基板电镀方法和装置以及可形变扩散板

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Publication number
WO2025200879A1
WO2025200879A1 PCT/CN2025/078231 CN2025078231W WO2025200879A1 WO 2025200879 A1 WO2025200879 A1 WO 2025200879A1 CN 2025078231 W CN2025078231 W CN 2025078231W WO 2025200879 A1 WO2025200879 A1 WO 2025200879A1
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WO
WIPO (PCT)
Prior art keywords
deformable
substrate
electroplated
diffusion plate
electroplating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/078231
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English (en)
French (fr)
Inventor
金一诺
王晖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
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Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2025200879A1 publication Critical patent/WO2025200879A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current

Definitions

  • the present application relates to the field of semiconductor manufacturing equipment, and in particular to a substrate electroplating method and device and a deformable diffusion plate.
  • the edge effect In the electroplating process, there is an edge effect. That is, due to the direct contact between the edge of the substrate and the fixture, the resistance of the edge area of the substrate is smaller than that of the center area of the substrate. The current tends to pass through the path with lower resistance. Therefore, the electric field strength in the edge area is greater than that in the center area, resulting in a higher metal deposition rate in the edge area than in the center area, which in turn leads to a significantly higher metal deposition thickness in the edge area of the substrate.
  • the distribution of metal deposition rate within the substrate is positively correlated with the distribution of metal deposition thickness. For different chip layers or different products, it is generally expected that the metal deposition thickness within the substrate is uniform. In some specific cases, there may be a need for the metal deposition thickness at the edge area of the substrate to be different from that in the center area of the substrate, such as chemical mechanical polishing (CMP) to remove excess metal deposition.
  • CMP chemical mechanical polishing
  • Existing devices can control the deposition rate within the substrate by setting a second anode and adjusting the second anode current output or replacing different diffusion plates.
  • a multi-anode design is required for the electroplating chamber, and an independent electroplating power supply is set up to control the current output of the second anode located in the outer ring.
  • the structure is more complicated and increases the equipment cost.
  • the solution for replacing diffuser plates with different shapes relies on adjusting the electric field distribution by varying the spacing between different substrate regions and the diffuser plate. Therefore, depending on product requirements, not only does the diffuser plate need to be manually replaced and repositioned, but the deposition thickness also needs to be tested and monitored after replacement, significantly impacting the equipment's operational life.
  • the object of the present invention is to provide a substrate electroplating method and device and a deformable diffusion plate to solve the technical problem of difficulty in efficiently controlling the deposition rate within the substrate sheet in the existing substrate electroplating process.
  • the present invention proposes a substrate electroplating method, comprising the following steps: placing a substrate in a plating tank, the substrate having a surface to be electroplated, the plating tank containing a plating liquid, and provided with a deformable diffuser plate, wherein the deformable diffuser has a first surface, the first surface facing the surface to be electroplated; adjusting the shape of the deformable diffuser plate to adjust the distance between the first surface from the center area to the edge area and the surface to be electroplated of the substrate; and electroplating metal onto the surface to be electroplated of the substrate.
  • the step of adjusting the shape of the deformable diffuser plate to adjust the distance between the first surface from the center area to the edge area and the surface to be electroplated of the substrate includes: pre-obtaining the correspondence between the preset deposition thickness of the surface to be electroplated from the center area to the edge area and the distance, and automatically adjusting the shape of the deformable diffuser plate according to the preset deposition thickness and the correspondence to adjust the distance between the first surface from the center area to the edge area and the surface to be electroplated, so that the actual deposition thickness of the surface to be electroplated from the center area to the edge area meets the preset deposition thickness.
  • the present invention also proposes a substrate electroplating device, comprising: a plating tank for containing a plating liquid; a clamp for placing the substrate in the plating tank, wherein the substrate has a surface to be electroplated; a deformable diffusion plate arranged in the plating tank, wherein the deformable diffusion plate has a first surface, the first surface faces the surface to be electroplated, and the edge of the deformable diffusion plate is fixedly connected to the inner wall of the plating tank; a deformation control device for adjusting the shape of the deformable diffusion plate to adjust the distance between the first surface from the center area to the edge area and the surface to be electroplated of the substrate.
  • the deformable diffuser plate includes a first layer and a second layer stacked on each other, wherein the thermal expansion coefficients of the first layer and the second layer are different, and the deformation control device includes a temperature variable element, which is used to change the temperature of the deformable diffuser plate to adjust the shape of the deformable diffuser plate.
  • the temperature variable element is arranged between the first layer plate and the second layer plate.
  • the deformation control device further includes a temperature controller, and the temperature variable element is used to change the temperature of the deformable diffusion plate according to a temperature control signal of the temperature controller to adjust the shape of the deformable diffusion plate.
  • the deformation control device further includes a deformation detector for detecting the deformation amount of the deformable diffusion plate and feeding back the deformation amount to the temperature controller; the temperature controller is further configured to generate the temperature control signal according to the deformation amount.
  • the deformation control device further includes a temperature detector for detecting the temperature of the deformable diffusion plate and feeding back the temperature to the temperature controller; the temperature controller is further configured to generate the temperature control signal according to the temperature.
  • the deformation control device includes an actuator and an actuator controller; the actuator is transmission-connected to the central area of the deformable diffuser plate, and is used to drive the deformable diffuser plate according to an actuation control signal of the actuator controller to adjust the shape of the deformable diffuser plate.
  • the present invention further provides a deformable diffuser plate for use in a substrate processing device.
  • the deformable diffuser plate includes a first layer and a second layer stacked together, wherein the first layer and the second layer have different thermal expansion coefficients.
  • the present invention provides a substrate electroplating method and apparatus, which have at least the following beneficial effects:
  • the shape of the deformable diffuser plate can be adjusted to adjust the distance between the center area and the edge area of the deformable diffuser plate and the surface to be electroplated on the substrate, thereby adjusting the electric field distribution and meeting different deposition thickness distribution requirements;
  • the deformable diffuser plate can be deformed predictably by changing the internal temperature without the need for additional mechanisms, without occupying the internal space of the electroplating tank, and without interfering with other components in the electroplating tank;
  • the actuator is used to drive the deformable diffuser plate to undergo predictable deformation.
  • the shape of the deformable diffuser plate can be adjusted to adjust the distance between the deformable diffuser plate from the center area to the edge area and the surface to be electroplated of the substrate, so as to adjust the electric field distribution and thereby meet different deposition thickness distribution requirements.
  • FIG1 is a schematic structural diagram of a substrate electroplating device according to a first embodiment of the present invention.
  • FIG2 is a schematic structural diagram of a deformable diffuser plate in a first embodiment of the present invention
  • FIG3 is a schematic top view of the structure of the deformable diffuser plate in the first embodiment of the present invention.
  • FIG4 is a schematic diagram showing the distribution of electric field lines when the deformable diffuser plate is in the first form according to the first embodiment of the present invention
  • FIG6 is a schematic diagram showing the distribution of electric field lines when the deformable diffuser plate is in the third state according to the first embodiment of the present invention.
  • FIG7 is a schematic structural diagram of a substrate electroplating device according to a third embodiment of the present invention.
  • the first embodiment of the present invention provides a substrate electroplating device.
  • FIG1 shows a schematic structural diagram of the substrate electroplating device in the first embodiment of the present invention.
  • the substrate electroplating device includes: an electroplating tank 1 for containing an electroplating solution 11; a fixture 2 for arranging a substrate 3 in the electroplating tank 1, wherein the substrate 3 has a surface to be electroplated 30; a deformable diffuser 4 disposed in the electroplating tank 1, wherein the deformable diffuser 4 has a first surface 40, the first surface 40 facing the surface to be electroplated 30, and the edge area of the deformable diffuser 4 is fixedly connected to the inner wall of the electroplating tank 1; and a deformation control device 5 for adjusting the shape of the deformable diffuser 4 to adjust the distance between the first surface 40 from the center area to the edge area and the surface to be electroplated 30.
  • the electroplating tank 1 is an upwardly opening tank.
  • the interior of the electroplating tank 1 is configured as a space for performing electroplating on the substrate 3.
  • the space contains an electroplating solution 11 and is also provided with an electroplating anode 6 and an ion membrane 7.
  • the electroplating anode 6 is disposed at the bottom of the electroplating tank 1, and the ion membrane 7 is disposed above the electroplating anode 6.
  • the deformable diffuser plate 4 is located below the substrate 3 and is positioned near the surface 30 to be electroplated of the substrate 3. In this embodiment, the substrate 3 and the deformable diffuser plate 4 are located above the ion membrane 7.
  • the electric field strength in different areas of the substrate 3 affects the metal deposition rate, and thus the metal deposition thickness. Since the edge of the substrate 3 is in direct contact with the fixture 2, the resistance of the edge area of the substrate 3 is smaller than that of the center area of the substrate 3. The current tends to pass through the path with lower resistance. Therefore, the electric field strength in the edge area is greater than that in the center area, resulting in a deposition rate at the edge greater than the deposition rate at the center. This, in turn, causes the deposition thickness at the edge area of the substrate 3 to be significantly higher, i.e., an edge effect. Therefore, in order to better control the metal deposition thickness in different areas of the substrate 3, it is necessary to control the electric field strength in different areas of the substrate 3.
  • a deformable diffuser plate 4 is disposed within the electroplating tank 1.
  • the surface 30 to be plated of the substrate 3 is the lower surface of the substrate 3.
  • the deformable diffuser plate 4 is located below the substrate 3 and has a first surface 40 facing the surface 30 to be plated.
  • the main body of the deformable diffuser plate 4 is made of an insulating material and is provided with a plurality of through-holes, allowing the electroplating solution 13 to pass through the through-holes, thereby achieving a uniform flow field and, in turn, a uniform electric field.
  • the shape of the deformable diffuser plate 4 can be adjusted by the deformation control device 5, thereby adjusting the distance between the first surface 40 from the center area to the edge area and the surface to be electroplated 30, thereby achieving the adjustment of the electric field distribution between the first surface 40 from the center area to the edge area and the surface to be electroplated 30.
  • the deformable diffuser plate 4 includes a first layer 41 and a second layer 42 stacked on top of each other, with the first layer 41 positioned above the second layer 42.
  • the upper surface of the first layer 41 is the first surface 40, wherein the first layer 41 and the second layer 42 have different thermal expansion coefficients.
  • the deformation control device 5 includes a temperature-variable element 511, which is disposed between the first layer 41 and the second layer 42 and is used to change the temperature of the deformable diffuser plate 4 to adjust the shape of the deformable diffuser plate 4.
  • the first and second layers 41, 42 have different coefficients of thermal expansion, when the temperature-variable element 511 changes temperature, the first and second layers 41, 42 deform to different degrees, causing the deformable diffuser 4 to warp along the normal direction of the substrate 3. Based on the difference in thermal expansion coefficients between the first and second layers 41, 42, the output power of the temperature-variable element 511 can be adjusted to change the temperature of the deformable diffuser 4, causing the deformable diffuser 4 to deform as desired. This adjusts the spacing between the first surface 40 and the surface to be plated 30 from the center to the edge, thereby achieving a desired electric field distribution.
  • the temperature detector 513 is arranged between the first plate 41 and the second plate 42, and is used to transmit the detected temperature of the deformable diffuser plate 4 to the temperature controller 512 to achieve closed-loop control of the temperature-variable element 511.
  • a plurality of through holes are provided on the deformable diffuser plate 4, and therefore, the heating wires 5111 and the temperature detectors 513 should be arranged to avoid the through holes.
  • the deformation control device 5 further includes a deformation detector, such as an image sensor or a displacement sensor, for detecting the deformation of the deformable diffuser plate 4 and feeding the detected deformation back to the temperature controller 512; the temperature controller 512 is further configured to generate a temperature control signal based on the detected deformation. For example, if the deformation detector detects that the deformation of the deformable diffuser plate 4 is small and does not meet expectations, the detection result is fed back to the temperature controller 512, which generates a temperature control signal to increase the heating power of the heating wire 5111 to increase the deformation of the deformable diffuser plate 4.
  • a deformation detector such as an image sensor or a displacement sensor
  • the deformable diffuser plate 4 in the first configuration, is flat and warp-free, with the first surface 40 maintaining the same spacing from the center to the edge of the surface to be plated 30. Due to the edge effect, the electric field at the edge is more concentrated than that at the center, resulting in electric field lines 8 near the edge of the substrate 3 exhibiting a curved shape that bends toward the edge of the substrate 3.
  • the dotted line X indicates the position of the first surface 40 in the first form.
  • the dotted line X indicates the position of the first surface 40 in the first form.
  • the distance between the first surface 40 and the surface to be plated 30 is reduced as a whole in the third form, the reduction from the center area to the edge area gradually decreases, which exacerbates the edge effect.
  • the distribution of the electric field lines 8 between the first surface 40 and the surface to be plated 30 is more concentrated toward the edge area.
  • the materials of the first and second layers 41, 42 can be appropriately selected based on actual electroplating requirements. Furthermore, the output power of the temperature-variable element 511 can be controlled based on the thermal expansion coefficients of the first and second layers 41, 42 to change the shape of the deformable diffuser 4, thereby causing the desired deformation of the deformable diffuser 4. This adjusts the spacing between the first surface 40 and the surface to be electroplated 30 from the center to the edge, thereby achieving the desired electric field distribution.
  • materials for the first and second layers 41, 42 include, but are not limited to, PET, PVDF, PFA, PTFE, PVC, PP, PEEK, HDPE, PPS, and the like.
  • the temperature-variable element 511 may also be a cooling element, or may integrate both a cooling element and a heating element, thereby flexibly changing the shape of the deformable diffuser plate 4. It should be understood that the deformation trend of the deformable diffuser plate 4 when the temperature-variable element 511 is a cooling element is opposite to the deformation trend of the deformable diffuser plate 4 when the temperature-variable element 511 is a heating element.
  • the correspondence between the preset deposition thickness and the spacing from the center area to the edge area of the surface 30 to be plated can be obtained in advance, and the correspondence is stored in the control device 512 of the deformation control device 5.
  • the control device 512 can automatically adjust the shape of the deformable diffuser 4 according to the preset deposition thickness and the correspondence to adjust the spacing between the first surface 40 of the deformable diffuser 4 from the center area to the edge area and the surface 30 to be plated of the substrate 3, so that the actual deposition thickness of the surface 30 to be plated from the center area to the edge area meets the preset deposition thickness.
  • the deformation control device 5 can automatically adjust the spacing without the operator manually inputting adjustment parameters into the deformation control device 5.
  • Adjustment of the spacing between the first surface 40 of the deformable diffuser plate 4 and the surface to be plated 30 of the substrate 3 from the center to the edge can be achieved without requiring disassembly or replacement, ensuring that the actual deposition thickness of the surface to be plated 30 from the center to the edge meets the preset deposition thickness.
  • This second embodiment provides a deformable diffuser plate for use in a substrate processing apparatus.
  • the deformable diffuser plate 4 is illustratively used in a substrate electroplating apparatus.
  • the deformable diffuser plate 4 includes a first layer 41 and a second layer 42 stacked together, wherein the first layer 41 and the second layer 42 have different coefficients of thermal expansion.
  • a detailed description of the deformable diffuser plate 4 is provided in the first embodiment and is omitted here.
  • the third embodiment provides a substrate electroplating device.
  • FIG 7 it shows a schematic structural diagram of the substrate electroplating device in the third embodiment of the present invention.
  • the main difference between the third embodiment and the first embodiment is that the deformation control device 5 is implemented in a different manner.
  • the actuator 521 is a component that can push or pull the deformable diffuser plate 4.
  • the actuator 521 includes an actuating conductive member 5211.
  • One end of the actuating conductive member 5211 is connected to the central area of the deformable diffuser plate 4, and this end moves along the normal direction of the substrate 3 according to the actuation control signal sent by the actuation controller 522, thereby causing the deformable diffuser plate 4 to deform due to the pulling or pushing force of the actuating conductive member 5211.
  • the normal direction of the substrate 3 is the vertical direction
  • the actuating conductive member 5211 moves downward in the vertical direction, pulling the deformable diffuser plate 4 to adjust the deformable diffuser plate 4 to the second shape. This can make the thickness of the metal deposition on the substrate 3 evenly distributed from the central area to the edge area, thereby suppressing the edge effect.
  • the movement of the actuator 521 can also be controlled based on actual electroplating requirements to adjust the shape of the deformable diffuser plate 4 to the first or third configuration.
  • the actuator 521 can maintain the shape of the deformable diffuser plate 4 in the first configuration when it remains in the initial position; or the actuator 521 can push the deformable diffuser plate 4 upward to adjust the shape of the deformable diffuser plate 4 to the third configuration.
  • the deformation control device 5 further includes a deformation detector, such as an image sensor or a displacement sensor, for detecting the deformation of the deformable diffuser plate 4 and feeding the detected deformation back to the actuation controller 522; the actuation controller 522 is further configured to generate an actuation control signal based on the detected deformation. For example, if the deformation detector detects that the deformation of the deformable diffuser plate 4 is small and does not meet expectations, the detection result is fed back to the actuation controller 522, which generates an actuation control signal to increase the pulling force or pushing force of the actuation conductive member 5211 to increase the deformation of the deformable diffuser plate 4.
  • a deformation detector such as an image sensor or a displacement sensor
  • the third embodiment of the present invention utilizes the deformable characteristics of the deformable diffuser plate 4 and drives the deformable diffuser plate 4 to undergo predictable deformation through the actuator 521. There is no need to disassemble and replace the deformable diffuser plate 4.
  • the shape of the deformable diffuser plate 4 can be adjusted to adjust the distance between the deformable diffuser plate 4 and the substrate 3 to adjust the electric field distribution, thereby meeting different deposition thickness distribution requirements.
  • the fourth embodiment provides a substrate electroplating method, comprising the following steps:
  • the electroplating tank 1 contains an electroplating solution 11 and is provided with a deformable diffuser plate 4, wherein the deformable diffuser plate 11 has a first surface 40, and the first surface 40 faces the surface 30 to be electroplated.
  • step S2 includes adjusting the shape of the deformable diffuser plate 4 to a first configuration such that the spacing between the first surface 40 and the surface to be plated 30 remains constant from the center region to the edge region.
  • the deformable diffuser plate 4 is flat, non-warped, and the spacing between the first surface 40 and the surface to be plated 30 remains constant from the center region to the edge region. Due to the edge effect, the electric field in the edge region is more concentrated than that in the center region, and the electric field lines 8 near the edge region of the substrate 3 exhibit a curved shape that bends toward the edge of the substrate 3.
  • step S2 includes: adjusting the shape of the deformable diffuser plate 4 to the second form so that the distance between the first surface 40 and the surface to be plated 30 gradually decreases from the center area to the edge area.
  • the shape of the deformable diffuser plate 4 is adjusted so that the deformable diffuser plate 4 is warped as shown in Figure 5. The distance between the first surface 40 and the surface to be plated 30 gradually decreases from the center area to the edge area.
  • step S2 includes: adjusting the shape of the deformable diffuser plate 4 to a third form so that the distance between the first surface 40 and the surface to be plated 30 gradually increases from the center area to the edge area.
  • the shape of the deformable diffuser plate 4 is adjusted to the third form so that the deformable diffuser plate 4 is warped as shown in Figure 6, and the distance between the first surface 40 and the surface to be plated 30 gradually increases from the center area to the edge area.
  • the first form although the distance between the first surface 40 and the surface to be plated 30 is reduced as a whole in the third form, the reduction amount from the center area to the edge area gradually decreases, which intensifies the edge effect.
  • the distribution of the electric field lines 8 between the first surface 40 and the surface to be plated 30 is more concentrated toward the edge area.
  • step S2 also includes: pre-acquiring the correspondence between the preset deposition thickness and the spacing of the surface to be plated 30 from the center area to the edge area (i.e., the spacing between the first surface 40 from the center area to the edge area and the surface to be plated 30 corresponding to different areas), and storing the correspondence in the control device 512 of the deformation control device 5.
  • the control device 512 can automatically adjust the shape of the deformable diffuser 4 according to the preset deposition thickness distribution and the correspondence to adjust the spacing between the first surface 40 of the deformable diffuser 4 from the center area to the edge area and the surface to be plated 30 of the substrate 3, so that the actual deposition thickness of the surface to be plated 30 from the center area to the edge area meets the preset deposition thickness.
  • the deformation control device 5 can automatically adjust the spacing without the operator manually inputting adjustment parameters into the deformation control device 5.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

本发明揭示了一种基板电镀方法，包括将基板配置于电镀槽中，基板具有待电镀表面，电镀槽中容纳有电镀液，并设置有可形变扩散板，其中，可形变扩散板具有第一表面，第一表面朝向所述待电镀表面；调整可形变扩散板的形状，以调节第一表面自中心区域至边缘区域与待电镀表面之间的间距；将金属电镀到基板的待电镀表面上。本发明通过调整可形变扩散板的形状，即使不重新拆装可形变扩散板，也可以调节第一表面自中心区域至边缘区域与基板的待电镀表面之间的间距，进而调节基板的待电镀表面的电场分布，使得基板的待电镀表面具有符合预期的金属沉积厚度分布。

Description

基板电镀方法和装置以及可形变扩散板 技术领域
本申请涉及半导体制造设备领域，特别是涉及一种基板电镀方法和装置以及可形变扩散板。
背景技术
在电镀工艺中，存在边缘效应，即由于基板边缘与夹具直接接触，导致基板边缘区域的电阻相对于基板中心区域的电阻小，电流趋向于从电阻小的路径通过，因此边缘区域的电场强度会大于中心区域的电场强度，导致边缘区域的金属沉积速率大于中心区域的金属沉积速率，进而导致基板边缘区域的金属沉积厚度明显偏高。基板片内的金属沉积速率分布与金属沉积厚度分布正相关，对于不同芯片层或不同产品，一般情况下，期望基板片内的金属沉积厚度分布均匀，在一些特定情况下，可能存在基板边缘区域的金属沉积厚度不同于基板中心区域的金属沉积厚度的需求，例如过量金属沉积的化学机械抛光(CMP)移除。
现有装置可以通过设置第二阳极并调整第二阳极电流输出或者更换不同的扩散板(diffusion plate)来控制基板片内沉积速率。
对于调整第二阳极输出电流的方案，需要电镀腔进行多阳极设计，设置独立的电镀电源控制位于外圈的第二阳极电流输出，结构较复杂并增加设备成本。
对于更换具有不同形状的扩散板的方案，其原理是利用不同形状的扩散板，改变基板不同区域相对于扩散板的间距来调整电场分布。因此，根据不同的产品需求，不仅需要人工更换扩散板，调整扩散板的安装位置，而且更换后还需要对沉积厚度进行测试监测，非常影响设备有效运行时间。
因此，如何提供一种高效的控制基板片内沉积速率的基板电镀方法和装置成为需要解决的问题。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种基板电镀方法和装置以及可形变扩散板，用于解决现有基板电镀工艺中难以高效控制基板片内沉积速率的技术问题。
为实现上述目的及其它相关目的，本发明提出了一种基板电镀方法，包括以下步骤：将基板配置于电镀槽中，所述基板具有待电镀表面，所述电镀槽中容纳有电镀液，并设置有可形变扩散板，其中，所述可形变扩散具有第一表面，所述第一表面朝向所述待电镀表面；调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述基板的待电镀表面之间的间距；将金属电镀到所述基板的待电镀表面上。
可选地，所述调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述基板的待电镀表面之间的间距的步骤包括：预先获取所述待电镀表面自中心区域至边缘区域的预设沉积厚度与所述间距的对应关系，根据所述预设沉积厚度和所述对应关系，自动调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域的与所述待电镀表面之间的间距，使得所述待电镀表面自中心区域至边缘区域的实际沉积厚度符合所述预设沉积厚度。
本发明还提出了一种基板电镀装置，包括：电镀槽，用于容纳电镀液；夹具，用于将所述基板配置于所述电镀槽中，所述基板具有待电镀表面；可形变扩散板，设置于所述电镀槽内，其中，所述可形变扩散板具有第一表面，所述第一表面朝向所述待电镀表面，所述可形变扩散板的边缘与所述电镀槽的内壁固定连接；形变调控装置，用于调节所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述基板的待电镀表面之间的间距。
可选地，所述可形变扩散板包括相互叠合的第一层板和第二层板，其中，所述第一层板与所述第二层板的热膨胀系数不同，所述形变调控装置包括变温元件，所述变温元件用于改变所述可形变扩散板的温度，以调整所述可形变扩散板的形状。
可选地，所述变温元件设置于所述第一层板和所述第二层板之间。
可选地，所述形变调控装置还包括温度控制器，所述变温元件用于根据所述温度控制器的温度控制信号改变所述可形变扩散板的温度，以调整所述可形变扩散板的形状。
可选地，所述形变调控装置还包括形变检测器，用于检测所述可形变扩散板的形变量，并将所述形变量反馈至所述温度控制器；所述温度控制器还用于根据所述形变量生成所述温度控制信号。
可选地，所述形变调控装置还包括温度检测器，用于检测所述可形变扩散板的温度，并将所述温度反馈至所述温度控制器；所述温度控制器还用于根据所述温度生成所述温度控制信号。
可选地，所述形变调控装置包括致动器和致动控制器；所述致动器与所述可形变扩散板的中心区域传动连接，用于根据所述致动控制器的致动控制信号驱动所述可形变扩散板，以调整所述可形变扩散板的形状。
本发明的另一方面还提出了可形变扩散板，应用于基板处理装置，所述可形变扩散板包括相互叠合的第一层板和第二层板，其中，所述第一层板与所述第二层板的热膨胀系数不同。
如上所述，本发明提供一种基板电镀方法及装置，至少具有以下有益效果：
1)通过设置可形变扩散板和形变调控装置，可以通过调节可形变扩散板的形状来调节可形变扩散板自中心区域至边缘区域与基板的待电镀表面之间的间距，以调节电场分布，进而满足不同的沉积厚度分布需求；
2)无需重新拆装并更换可形变扩散板即可调节可形变扩散板自中心区域至边缘区域与基板的待电镀表面之间的间距；
3)利用不同材料的热膨胀系数差异，通过内部变温的方式实现可形变扩散板的可预期的形变，无需设置额外的机构，不占用电镀槽的内部空间且不会干涉到电镀槽内的其他部件；
4)利用可形变扩散板的可形变特性，通过致动器驱动可形变扩散板发生可预期的形变，可通过调节可形变扩散板的形状来调节可形变扩散板自中心区域至边缘区域与基板的待电镀表面之间的间距，以调节电场分布，进而满足不同的沉积厚度分布需求。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。
图1显示为本发明实施例一中的基板电镀装置的结构示意图；
图2显示为本发明实施例一中的可形变扩散板的结构示意图；
图3显示为本发明实施例一中的可形变扩散板的俯视结构示意图；
图4显示为本发明实施例一中的可形变扩散板为第一形态时的电场线分布示意图；
图5显示为本发明实施例一中的可形变扩散板为第二形态时的电场线分布示意图；
图6显示为本发明实施例一中的可形变扩散板为第三形态时的电场线分布示意图；以及
图7显示为本发明实施例三中的基板电镀装置的结构示意图。
本申请的较佳实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其它优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或调节。
需要说明的是，本公开的附图仅以示意方式说明本发明的基本构想，虽附图中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量及比例可为一种随意的调节，且其组件布局形态也可能更为复杂。
下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置的例子。
在本公开使用的术语是仅仅出于描述特定实施例的目的，而非旨在限制本公开。在本公开和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式，除非上下文清楚地表示其他含义。还应当理解，本文中使用的术语“和/或”是指并包含一个或多个相关联的列出项目的任何或所有可能组合。
在本公开的描述中，除非另有规定和限定，需要说明的是，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是机械连接或电连接，也可以是两个元件内部的连通，可以是直接相连，也可以通过中间媒介间接相连，对于本领域技术人员而言，可以根据具体情况理解上述术语的具体含义。
应当理解，尽管在本公开可能采用术语第一、第二、第三等来描述各种信息，但这些信息不应限于这些术语。这些术语仅用来将同一类型的信息彼此区分开。
在本公开的描述中，需要理解的是，可能使用到的术语“上”“下”“前”“后”“左”“右”“竖直”“水平”“顶”“底”“内”“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
实施例一
本实施例一提供了一种基板电镀装置，参阅图1，其示出了本发明实施例一中的基板电镀装置的结构示意图。基板电镀装置包括：电镀槽1，用于容纳电镀液11；夹具2，用于将基板3配置于电镀槽1中，基板3具有待电镀表面30；可形变扩散板4，设置于电镀槽1内，其中，可形变扩散板4具有第一表面40，第一表面40朝向待电镀表面30，可形变扩散板4的边缘区域与电镀槽1的内壁固定连接；形变调控装置5，用于调整可形变扩散板4的形状，以调节第一表面40自中心区域至边缘区域与待电镀表面30之间的间距。
如图1所示，本实施例中，电镀槽1为开口向上的槽体，电镀槽1的内部被配置为对基板3执行电镀的空间，该空间内容纳有电镀液11，并且还设置有电镀阳极6和离子膜7。其中，电镀阳极6设置于电镀槽1的底部，离子膜7设置于电镀阳极6的上方。可形变扩散板4位于基板3下方，靠近基板3的待电镀表面30设置。本实施例中，基板3和可形变扩散板4位于离子膜7的上方，另外，基板3的板面朝下，因此，基板3的待电镀表面30为基板3的下表面。其中，可形变扩散板4的边缘安装在电镀槽1的内壁上。夹具2位于电镀槽1的上方，用于夹持基板3并在执行电镀时将基板3配置于电镀槽1中，使得基板3浸没于电镀槽1中的电镀液11。在执行电镀时，将基板3配置为电镀阴极，并浸没于电镀槽1中的电镀液11，电镀液11中的金属阳离子依次经过离子膜7和可形变扩散板4后在基板3的待电镀表面30上被还原成金属，沉积在待电镀表面30上。
电镀过程中，基板3上不同区域的电场强度大小影响着金属沉积速率，进而影响着金属沉积厚度。由于基板3边缘与夹具2直接接触，基板3的边缘区域的电阻相对于基板3的中心区域电阻要小，电流趋向于从电阻小的路径通过，因此边缘区域的电场强度会大于中心区域的电场强度，导致边缘沉积速率大于中心沉积速率，进而导致基板3边缘区域的沉积厚度明显偏高，即产生边缘效应。因此，为了更好地控制基板3上不同区域的金属沉积厚度，需要控制基板3上不同区域的电场强度大小。
本实施例中，电镀槽1内设置有可形变扩散板4，在对基板3执行电镀处理时，基板3的待电镀表面30为基板3的下表面，可形变扩散板4位于基板3的下方，具有朝向待电镀表面30的第一表面40。可形变扩散板4的主体由绝缘材料制成，其上设置有多个通孔，使得电镀液13可以穿过通孔，起到均匀流场的作用，进而起到均匀电场的作用。通过调整可形变扩散板4的第一表面40自中心区域至边缘区域与待电镀表面30之间的间距，可以进一步改善电场分布的均匀性。
传统的扩散板一旦固定安装在电镀槽1内后，就难以再调节与基板之间的间距，尤其难以针对扩散板不同区域(自中心区域至边缘区域)以不同的间距变化量(也即改变扩散板自身形状)调节扩散板不同区域与基板之间的间距。然而，本实施例中，包括可形变扩散板4和形变调控装置5，可形变扩散板4采用可形变的材质，具有可形变的特性。因此，即使可形变扩散板4已经安装于电镀槽1内，也可以通过形变调控装置5调整可形变扩散板4的形状，进而调节第一表面40自中心区域至边缘区域与待电镀表面30之间的间距，进而实现调节第一表面40自中心区域至边缘区域与待电镀表面30之间的电场分布。
参阅图2，其示出本发明实施例一中的扩散板的结构示意图。示例性地，可形变扩散板4包括相互叠合的第一层板41和第二层板42，第一层板41位于第二层板42的上方，第一层板41的上表面即为第一表面40，其中，第一层板41与第二层板42的热膨胀系数不同。结合图1，形变调控装置5包括变温元件511，变温元件511设置于第一层板41和第二层板42之间，用于改变可形变扩散板4的温度，以调整可形变扩散板4的形状。
优选地，本实施例中，形变调控装置5还包括温度控制器512，变温元件511用于根据温度控制器512的温度控制信号改变可形变扩散板4的温度，以调整可形变扩散板4的形状。示例性地，温度控制器512可以是单独设置的单片机、PLC、计算机等具有控制功能的装置，也可以是基板电镀装置自身原有的控制装置。
由于第一层板41和第二层板42的热膨胀系数不同，所以在变温元件511改变温度的情况下，第一层板41和第二层板42的形变程度也会不同，使得可形变扩散板4沿基板3的法线方向发生翘曲形变。根据第一层板41和第二层板42之间的热膨胀系数差异，可以调节变温元件511的输出功率，改变可形变扩散板4的温度，使得可形变扩散板4发生预期的形变，以调节第一表面40自中心区域至边缘区域与待电镀表面30之间的间距，进而得到预期的电场分布。
结合图3，图3显示为本发明实施例一中的可形变扩散板的俯视结构示意图。变温元件511包括多个加热丝5111，沿可形变扩散板4的直径分布在第一层板41和第二层板42之间。优选地，本实施例中，形变调控装置5还包括多个温度检测器513，如图3所示，示例性地，本实施例中，包括四个温度检测器513，均匀分布在可形变扩散板4上。优选地，温度检测器513设置在第一层板41和第二层板42之间，用于将检测到的可形变扩散板4的温度传输至温度控制器512，实现对变温元件511的闭环控制。可形变扩散板4上设置有多个通孔(未图示)，因此，加热丝5111和温度检测器513的设置应当避开通孔。
应当理解的是，图3所示的加热丝5111和温度检测器513的数量和排布方式只是示例性的，在其他可能的实施例中，加热丝5111也可以例如是以螺旋线的形式排布，温度检测器513的数量也可以少于或者多于四个。在第一层板41和第二层板42随温度变化而产生的形变能够满足预期形变的情况下，可选地，加热丝5111也可以只分布在可形变扩散板4的特定区域，例如边缘区域。本领域技术人员可以根据本公开的教导，合理设置加热丝5111和温度检测器513。
应当理解的是，在其他可能的实施例中，形变调控装置5还包括形变检测器，例如是图像传感器或者位移传感器等，用于检测可形变扩散板4的形变量，并将检测到的形变量反馈至温度控制器512；温度控制器512还用于根据检测到的形变量生成温度控制信号。例如，如果形变检测器检测到可形变扩散板4的形变量较小，没有达到预期，则将该检测结果反馈至温度控制器512，温度控制器512生成温度控制信号提升加热丝5111的加热功率以增加可形变扩散板4的形变量。
参阅图4至图6，分别示出了本发明实施例一中的可形变扩散板4为第一形态、第二形态和第三形态时的第一表面40与待电镀表面30之间电场线8的分布示意图。
参阅图4，在第一形态下，可形变扩散板4呈现为平直的、无翘曲的板状，第一表面40自中心区域至边缘区域与待电镀表面30之间的间距没有差异。由于边缘效应的影响，边缘区域的电场比中心区域的电场更集中，靠近基板3边缘区域的电场线8会呈现向基板3边缘弯曲的曲线状。
参阅图5，其中，虚线X示意的是第一形态下第一表面40的位置。当第一层板41的热膨胀系数小于第二层板42(请参考图2中第一层板41和第二层板42)，在对可形变扩散板4进行加热后，位于可形变扩散板4下部的第二层板42的形变量大于位于可形变扩散板4上部的第一层板41，使得可形变扩散板4发生如图5所示的翘曲，第一表面40与待电镀表面30之间的间距，自中心区域至边缘区域逐渐减小。与第一形态相比，尽管在第二形态下，第一表面40与待电镀表面30之间的间距整体增大，但是自中心区域至边缘区域的增大量逐渐减小，这有效地抑制了边缘效应，使得第一表面40与待电镀表面30之间的电场线8的分布更加均匀，没有像图4中的那样向边缘区域集中。
参阅图6，其中，虚线X示意的是第一形态下第一表面40的位置。当第一层板41的热膨胀系数大于第二层板42(请参考图2中第一层板41和第二层板42)，在对可形变扩散板4进行加热后，位于可形变扩散板4上部的第一层板41的形变量大于位于可形变扩散板4下部的第二层板42的形变量，使得可形变扩散板4发生如图6所示的翘曲，第一表面40与待电镀表面30之间的间距，自中心区域至边缘区域逐渐增大。与第一形态相比，尽管在第三形态下，第一表面40与待电镀表面30之间的间距整体减小，但是自中心区域至边缘区域的减小量逐渐减小，这加剧了边缘效应，与图4和图5相比，使得第一表面40与待电镀表面30之间的电场线8的分布更加向边缘区域集中。
因此，可以根据实际的电镀需求，选择合适的第一层板41和第二层板42的材料，并根据第一层板41和第二层板42的热膨胀系数，控制变温元件511的输出功率，改变可形变扩散板4的形状，使得可形变扩散板4发生预期的形变，以调节第一表面40自中心区域至边缘区域与待电镀表面30之间的间距，进而得到预期的电场分布。示例性地，第一层板41和第二层板42的材质包括但不限于PET，PVDF，PFA，PTFE，PVC，PP，PEEK，HDPE，PPS等。
此外，在其他可能的实施例中，变温元件511也可以是冷却元件，还可以同时集成有冷却元件和加热元件，能够灵活地改变可形变扩散板4的形状。应当理解的是，变温元件511为冷却元件时可形变扩散板4的形变趋势与变温元件511为加热元件时的可形变扩散板4的形变趋势相反。
可选地，可以预先获取待电镀表面30自中心区域至边缘区域的预设沉积厚度与间距(即第一表面40自中心区域至边缘区域与待电镀表面30之间对应于不同区域的若干间距)的对应关系，将该对应关系存储至形变调控装置5的控制装置512，控制装置512可以根据预设沉积厚度和对应关系，自动调整可形变扩散板4的形状，以调节可形变扩散板4的第一表面40自中心区域至边缘区域与基板3的待电镀表面30之间的间距，使得待电镀表面30自中心区域至边缘区域的实际沉积厚度符合预设沉积厚度。这样，可以实现形变调控装置5的自动调节间距，无需操作人员手动向形变调控装置5输入调节参数。
本实施例一利用不同材料的热膨胀系数差异，通过改变温度(加热或冷却)的方式实现可形变扩散板4的可预期的形变，以调节第一表面40自中心区域至边缘区域与待电镀表面30之间的间距，进而得到预期的电场分布。无需设置额外的机构，不占用电镀槽1的内部空间且不会干涉到电镀槽1内的其他部件，无需重新拆装和更换即可实现调节可形变扩散板4的第一表面40自中心区域至边缘区域与基板3的待电镀表面30之间的间距，使得待电镀表面30自中心区域至边缘区域的实际沉积厚度符合预设沉积厚度。
实施例二
本实施例二提供了一种可形变扩散板，应用于基板处理装置，如图1所示，示例性地，可形变扩散板4应用于基板电镀装置。如图2所示，可形变扩散板4包括相互叠合的第一层板41和第二层板42，其中，第一层板41与第二层板42的热膨胀系数不同。有关可形变扩散板4的具体描述参见实施例一，在此不做赘述。
实施例三
本实施例三提供了一种基板电镀装置，参阅图7，其示出了本发明实施例三中的基板电镀装置的结构示意图。本实施例三与实施例一相比，主要区别在于：形变调控装置5的实现方式不同。
如图7所示，本实施例三中，形变调控装置5包括致动器521和致动控制器522；可形变扩散板4的边缘区域的端部与电镀槽1的内壁固定连接，致动器521与可形变扩散板4的中心区域连接，用于根据致动控制器的致动控制信号驱动可形变扩散板4，以调整可形变扩散板4的形状。
应当理解的是，致动器521是可以推动或者拉动可形变扩散板4的部件，示例性地，本实施例中，致动器521包括致动传导件5211。致动传导件5211的一端与可形变扩散板4的中心区域相连接，且该端根据致动控制器522发送的致动控制信号沿基板3的法线方向运动，进而使得可形变扩散板4因受到致动传导件5211的拉力或者推力而发生形变。如图7所示，示例性地，基板3的法线方向为竖直方向，致动传导件5211沿竖直方向向下运动，拉动可形变扩散板4以将可形变扩散板4的调整至第二形态，可以使得基板3上的金属沉积厚度自中心区域至边缘区域均匀分布，抑制边缘效应。
应当理解的是，也可以根据实际的电镀需求控制致动器521的运动，调整可形变扩散板4的形状至第一形态或者第三形态。例如，致动器521保持处于初始位置时可以保持可形变扩散板4的形状为第一形态；或者致动器521向上推动可形变扩散板4以调整可形变扩散板4的形状至第三形态。
应当理解的是，在其他可能的实施例中，形变调控装置5还包括形变检测器，例如是图像传感器或者位移传感器等，用于检测可形变扩散板4形变量，并将检测到的形变量反馈至致动控制器522；致动控制器522还用于根据检测到的形变量生成致动控制信号。例如，如果形变检测器检测到可形变扩散板4的形变量较小，没有达到预期，则将该检测结果反馈至致动控制器522，致动控制器522生成致动控制信号提升致动传导件5211的拉力或者推力以增加可形变扩散板4的形变量。
本实施例三利用可形变扩散板4的可形变特性，通过致动器521驱动可形变扩散板4发生可预期的形变，无需重新拆装并更换可形变扩散板4，即可通过调节可形变扩散板4的形状来调节可形变扩散板4与基板3之间的间距，以调节电场分布，进而满足不同的沉积厚度分布需求。
实施例四
本实施例四提供了一种基板电镀方法，包括以下步骤：
S1，将基板3配置于电镀槽1中，基板3具有待电镀表面30，电镀槽1中容纳有电镀液11，并设置有可形变扩散板4，其中，可形变扩散板11具有第一表面40，第一表面40朝向待电镀表面30；
S2，调整可形变扩散板4的形状，以调节第一表面40自中心区域至边缘区域与基板3的待电镀表面30之间的间距；
S3，将金属电镀到基板3的待电镀表面30上。
具体地，在不需要抑制边缘效应的工艺需求下，步骤S2包括：调整可形变扩散板4的形状至第一形态，以使得第一表面40自中心区域至边缘区域与待电镀表面30之间的间距保持不变。参阅图4，可形变扩散板4呈现为平直的、无翘曲的板状，第一表面40自中心区域至边缘区域与待电镀表面30之间的间距没有差异，由于边缘效应的影响，边缘区域的电场比中心区域的电场更集中，靠近基板3边缘区域的电场线8会呈现向基板3边缘弯曲的曲线状。
在需要抑制边缘效应的工艺需求下，步骤S2包括：调整可形变扩散板4的形状至第二形态，以使得第一表面40自中心区域至边缘区域与待电镀表面30之间的间距逐渐减小。参阅图5，调整可形变扩散板4的形状，使得可形变扩散板4发生如图5所示的翘曲。第一表面40与待电镀表面30之间的间距，自中心区域至边缘区域逐渐减小。与第一形态相比，尽管在第二形态下，第一表面40与待电镀表面30之间的间距整体增大，但是自中心区域至边缘区域的增大量逐渐减小，这有效地抑制了边缘效应，使得第一表面40与待电镀表面30之间的电场线8的分布更加均匀，没有像图4中的那样向边缘区域集中。
在需要加剧边缘效应的工艺需求下，步骤S2包括：调整可形变扩散板4的形状至第三形态，以使得第一表面40自中心区域至边缘区域与待电镀表面30之间的间距逐渐增大。参阅图6，调整可形变扩散板4的形状至第三形态，使得可形变扩散板4发生如图6所示的翘曲，第一表面40与待电镀表面30之间的间距，自中心区域至边缘区域逐渐增大。与第一形态相比，尽管在第三形态下，第一表面40与待电镀表面30之间的间距整体减小，但是自中心区域至边缘区域的减小量逐渐减小，这加剧了边缘效应，与图4和图5相比，使得第一表面40与待电镀表面30之间的电场线8的分布更加向边缘区域集中。
可选地，步骤S2还包括：预先获取待电镀表面30自中心区域至边缘区域的预设沉积厚度与间距(即第一表面40自中心区域至边缘区域与待电镀表面30之间对应于不同区域的若干间距)的对应关系，将该对应关系存储至形变调控装置5的控制装置512，控制装置512可以根据预设沉积厚度分布和对应关系，自动调整可形变扩散板4的形状，以调节可形变扩散板4的第一表面40自中心区域至边缘区域的与基板3的待电镀表面30之间的间距，使得待电镀表面30自中心区域至边缘区域的实际沉积厚度符合预设沉积厚度。这样，可以实现形变调控装置5的自动调节间距，无需操作人员手动向形变调控装置5输入调节参数。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或调节。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或调节，仍应由本发明的权利要求所涵盖。

Claims (14)

  1. 一种基板电镀方法，其特征在于，包括以下步骤：
    将基板配置于电镀槽中，所述基板具有待电镀表面，所述电镀槽中容纳有电镀液，并设置有可形变扩散板，其中，所述可形变扩散板具有第一表面，所述第一表面朝向所述待电镀表面；
    调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距；
    将金属电镀到所述待电镀表面上。
  2. 根据权利要求1所述的基板电镀方法，其特征在于，
    所述调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距的步骤包括：
    调整所述可形变扩散板的形状至第一形态，以使得所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距保持不变。
  3. 根据权利要求1所述的基板电镀方法，其特征在于，
    所述调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距的步骤包括：
    调节所述可形变扩散板的形状至第二形态，以使得所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距逐渐减小。
  4. 根据权利要求1所述的基板电镀方法，其特征在于，
    所述调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距的步骤包括：
    调节所述可形变扩散板的形状至第三形态，以使得所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距逐渐增大。
  5. 根据权利要求1所述的基板电镀方法，其特征在于，
    所述调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距的步骤包括：
    预先获取所述待电镀表面自中心区域至边缘区域的预设沉积厚度与所述间距的对应关系，根据所述预设沉积厚度和所述对应关系，自动调整所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距，使得所述待电镀表面自中心区域至边缘区域的实际沉积厚度符合所述预设沉积厚度。
  6. 一种基板电镀装置，其特征在于，包括：
    电镀槽，用于容纳电镀液；
    夹具，用于将所述基板配置于所述电镀槽中，所述基板具有待电镀表面；
    可形变扩散板，设置于所述电镀槽内，其中，所述可形变扩散板具有第一表面，所述第一表面朝向所述待电镀表面，所述可形变扩散板的边缘与所述电镀槽的内壁固定连接；
    形变调控装置，用于调节所述可形变扩散板的形状，以调节所述第一表面自中心区域至边缘区域与所述待电镀表面之间的间距。
  7. 根据权利要求6所述的基板电镀装置，其特征在于，
    所述可形变扩散板包括相互叠合的第一层板和第二层板，其中，所述第一层板与所述第二层板的热膨胀系数不同；
    所述形变调控装置包括变温元件，所述变温元件用于改变所述可形变扩散板的温度，以调整所述可形变扩散板的形状。
  8. 根据权利要求7所述的基板电镀装置，其特征在于，
    所述变温元件设置于所述第一层板与所述第二层板之间。
  9. 根据权利要求7所述的基板电镀装置，其特征在于，
    所述形变调控装置还包括温度控制器，所述变温元件用于根据所述温度控制器的温度控制信号改变所述可形变扩散板的温度，以调整所述可形变扩散板的形状。
  10. 根据权利要求9所述的基板电镀装置，其特征在于，
    所述形变调控装置还包括形变检测器，用于检测所述可形变扩散板的形变量，并将所述形变量反馈至所述温度控制器；
    所述温度控制器还用于根据所述形变量生成所述温度控制信号。
  11. 根据权利要求9所述的基板电镀装置，其特征在于，
    所述形变调控装置还包括温度检测器，用于检测所述可形变扩散板的温度，并将所述温度反馈至所述温度控制器；
    所述温度控制器还用于根据所述温度生成所述温度控制信号。
  12. 根据权利要求6所述的基板电镀装置，其特征在于，
    所述形变调控装置包括致动器和致动控制器；
    所述致动器与所述可形变扩散板的中心区域传动连接，用于根据所述致动控制器的致动控制信号驱动所述可形变扩散板，以调整所述可形变扩散板的形状。
  13. 根据权利要求12所述的基板电镀装置，其特征在于，
    所述形变调控装置还包括形变检测器，用于检测所述可形变扩散板的形变量，并将所述形变量反馈至所述致动控制器；
    所述致动控制器还用于根据所述形变量生成所述致动控制信号。
  14. 一种可形变扩散板，应用于基板处理装置，其特征在于，
    所述可形变扩散板包括相互叠合的第一层板和第二层板，其中，所述第一层板与所述第二层板的热膨胀系数不同。
PCT/CN2025/078231 2024-03-29 2025-02-20 基板电镀方法和装置以及可形变扩散板 Pending WO2025200879A1 (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040000487A1 (en) * 2002-06-28 2004-01-01 Matthias Bonkass Method and system for controlling ion distribution during plating of a metal on a workpiece surface
CN1467831A (zh) * 2002-05-27 2004-01-14 株式会社日立制作所 多层电路板、多层电路板的制造工艺、用于多层电路的板以及电子装置
US20060228496A1 (en) * 2004-05-12 2006-10-12 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
DE102007015641A1 (de) * 2007-03-31 2008-10-02 Höllmüller Maschinenbau GmbH Vorrichtung und Verfahren zum Galvanisieren von Gegenständen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1467831A (zh) * 2002-05-27 2004-01-14 株式会社日立制作所 多层电路板、多层电路板的制造工艺、用于多层电路的板以及电子装置
US20040000487A1 (en) * 2002-06-28 2004-01-01 Matthias Bonkass Method and system for controlling ion distribution during plating of a metal on a workpiece surface
US20060228496A1 (en) * 2004-05-12 2006-10-12 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
DE102007015641A1 (de) * 2007-03-31 2008-10-02 Höllmüller Maschinenbau GmbH Vorrichtung und Verfahren zum Galvanisieren von Gegenständen

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