WO2025199785A1 - 显示基板及显示装置 - Google Patents

显示基板及显示装置

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Publication number
WO2025199785A1
WO2025199785A1 PCT/CN2024/084002 CN2024084002W WO2025199785A1 WO 2025199785 A1 WO2025199785 A1 WO 2025199785A1 CN 2024084002 W CN2024084002 W CN 2024084002W WO 2025199785 A1 WO2025199785 A1 WO 2025199785A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
sub
auxiliary
light
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/084002
Other languages
English (en)
French (fr)
Inventor
曾诚
王丹
禹光日
马璐蔺
魏振业
王其云
成兴建
吴欢
何宇平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd, Beijing BOE Technology Development Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202480000615.6A priority Critical patent/CN121400108A/zh
Priority to PCT/CN2024/084002 priority patent/WO2025199785A1/zh
Publication of WO2025199785A1 publication Critical patent/WO2025199785A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

Definitions

  • the present disclosure belongs to the field of display technology, and particularly relates to a display substrate and a display device.
  • the present invention aims to solve at least one of the technical problems existing in the prior art and provides a display substrate and a display device.
  • An embodiment of the present disclosure provides a display substrate, comprising:
  • Pixel units arranged in an array are provided on the substrate; the pixel units include a first sub-pixel, a second sub-pixel, and a third sub-pixel that respectively emit light of different colors, the first sub-pixel and the third sub-pixel are located in the same row, and are located in a different row from the second sub-pixel; wherein,
  • At least one auxiliary sub-pixel is arranged between the second sub-pixels of the pixel units located in the same row, and the auxiliary sub-pixel and the second sub-pixel emit light of the same color.
  • the display substrate also includes a driving circuit layer located on the side of the base substrate where the light-emitting device is located, and the driving circuit layer includes a first power signal line, and the first power signal line is electrically connected to the second electrode of the light-emitting device through an auxiliary electrode, and the auxiliary electrode is projected on the base substrate between the light-emitting devices of the first sub-pixel and the light-emitting devices of the third sub-pixel that are adjacent to each other in the row direction on the base substrate.
  • a first interlayer insulating layer is provided between the driving circuit layer and the layer where the first electrode of the light-emitting device is located, and a pixel defining layer is provided on a layer of the first electrode of the light-emitting device away from the base substrate;
  • the auxiliary electrode is arranged in the same layer as the first electrode of the light-emitting device, and is connected to the first power signal line through a first via hole penetrating the first interlayer insulating layer; the pixel defining layer has a first through hole corresponding to the position of the auxiliary electrode and penetrating along its thickness direction; the side wall of the first through hole is covered with a protective layer.
  • an electron conducting layer is provided on the surface of the auxiliary electrode away from the base substrate.
  • the orthographic projection of the auxiliary electrode on the base substrate is located on both sides of the orthographic projection of the auxiliary electrode on the base substrate, and the first sub-pixel and the third sub-pixel are respectively located in two different pixel units.
  • the display substrate further comprises a pixel defining layer provided on the first electrode of the light-emitting device away from the base substrate, wherein the pixel defining layer has a first accommodating portion, a second accommodating portion, a third accommodating portion and an auxiliary accommodating portion penetrating along a thickness direction thereof;
  • the light-emitting layer of the light-emitting device in the first sub-pixel covers the first accommodation portion
  • the light-emitting layer of the light-emitting device in the second sub-pixel covers the second accommodation portion
  • the light-emitting layer of the light-emitting device in the third sub-pixel covers the third accommodation portion
  • the light-emitting layer of the light-emitting device in the auxiliary sub-pixel covers the auxiliary accommodation portion
  • the length of the second accommodation portion in the row direction is g1;
  • the minimum distance between the auxiliary accommodating portions, the first accommodating portion in the pixel unit located at the i-th row and j-th column, the second accommodating portion in the pixel unit located at the i-th row and j-th column, and the second accommodating portion in the pixel unit located at the i-th row and (j+1)-th column, is l3;
  • the minimum distance between the auxiliary accommodating portions, the first accommodating portion in the pixel unit located at the (i+1)th row and jth column, the second accommodating portion in the pixel unit located at the i-th row and jth column, and the second accommodating portion in the pixel unit located at the i-th row and (j+1)th column, is l4; i and j are both positive integers; l3 ⁇ 1/6*g1,l4 ⁇ 1/3*g1.
  • the display substrate further comprises a pixel defining layer provided on the first electrode of the light-emitting device away from the base substrate, wherein the pixel defining layer has a first accommodating portion, a second accommodating portion, a third accommodating portion and an auxiliary accommodating portion penetrating along a thickness direction thereof;
  • the light-emitting layer of the light-emitting device in the first sub-pixel covers the first accommodation portion
  • the light-emitting layer of the light-emitting device in the second sub-pixel covers the second accommodation portion
  • the light-emitting layer of the light-emitting device in the third sub-pixel covers the third accommodation portion
  • the light-emitting layer of the light-emitting device in the auxiliary sub-pixel covers the auxiliary accommodation portion
  • the length of the second accommodation portion in the row direction is g1;
  • a plurality of the auxiliary accommodating portions are arranged between adjacent second accommodating portions, at least some of the plurality of the auxiliary accommodating portions are arranged side by side along the column direction, and the spacing between the auxiliary accommodating portions arranged side by side along the column direction is l5, 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • the display substrate further comprises a pixel defining layer provided on the first electrode of the light-emitting device away from the base substrate, wherein the pixel defining layer has a first accommodating portion, a second accommodating portion, a third accommodating portion and an auxiliary accommodating portion penetrating along a thickness direction thereof;
  • the light-emitting layer of the light-emitting device in the first sub-pixel covers the first accommodation portion
  • the light-emitting layer of the light-emitting device in the second sub-pixel covers the second accommodation portion
  • the light-emitting layer of the light-emitting device in the third sub-pixel covers the third accommodation portion
  • the light-emitting layer of the light-emitting device in the auxiliary sub-pixel covers the auxiliary accommodation portion
  • the length of the second accommodation portion in the row direction is g1;
  • the minimum distance between one of the second-accommodation portions and the auxiliary accommodation portion is d1
  • the minimum distance between the other second-accommodation portion and the auxiliary accommodation portion is d2, d1 ⁇ 1/10*g1, d2 ⁇ 1/5*g1.
  • the display substrate further comprises a pixel defining layer provided on the first electrode of the light-emitting device away from the base substrate, wherein the pixel defining layer has a first accommodating portion, a second accommodating portion, a third accommodating portion and an auxiliary accommodating portion penetrating along a thickness direction thereof;
  • the light-emitting layer of the light-emitting device in the first sub-pixel covers the first accommodation portion
  • the light-emitting layer of the light-emitting device in the second sub-pixel covers the second accommodation portion
  • the light-emitting layer of the light-emitting device in the third sub-pixel covers the third accommodation portion
  • the light-emitting layer of the light-emitting device in the auxiliary sub-pixel covers the auxiliary accommodation portion
  • the length of the second accommodation portion in the row direction is g1;
  • a plurality of the auxiliary accommodating parts are arranged between adjacent second accommodating parts, at least some of the plurality of the auxiliary accommodating parts are arranged side by side along the row direction, and the spacing between the auxiliary accommodating parts arranged side by side along the row direction is d3, 1/10*g1 ⁇ d3 ⁇ 1/6*g1.
  • auxiliary sub-pixel is arranged between the second sub-pixels adjacent to each other in the row direction, and the aperture ratio ratio of the auxiliary sub-pixel to the second sub-pixel is 0.5-10.
  • a plurality of the auxiliary sub-pixels arranged side by side along the row direction between the second sub-pixels adjacent to each other in the row direction have an aperture ratio ratio of the auxiliary sub-pixels to the second sub-pixels of 0.1 to 0.6.
  • a plurality of the auxiliary sub-pixels are arranged side by side in the column direction between the second sub-pixels adjacent to each other in the row direction, and an aperture ratio ratio of the auxiliary sub-pixels to the second sub-pixels is 0.1 to 0.6.
  • a plurality of the auxiliary sub-pixels are arranged between the second sub-pixels adjacent to each other in the row direction, and some of the plurality of auxiliary sub-pixels are arranged side by side along the row direction, and some are arranged side by side along the column direction; the aperture ratio ratio of the auxiliary sub-pixels to the second sub-pixels is 0.05 to 0.4.
  • auxiliary sub-pixels between the second sub-pixels adjacent to each other in the row direction, and at least some of the auxiliary sub-pixels have different aperture ratios.
  • a ratio of the one with the largest aperture ratio to the one with the smallest aperture ratio is 1.5-4.
  • the first sub-pixel, the second sub-pixel, the third sub-pixel and the auxiliary sub-pixel all include a light-emitting device that emits light of a third color; the first sub-pixel also includes a first quantum dot unit located on the light-emitting surface side of the light-emitting device, the second sub-pixel also includes a second quantum dot unit located on the light-emitting surface side of the light-emitting device, and the auxiliary sub-pixel also includes an auxiliary quantum dot unit located on the light-emitting surface side of the light-emitting device;
  • the first quantum dot unit is configured to emit the first color light under the excitation of the third color light
  • the second quantum dot unit and the auxiliary quantum dot unit are both configured to emit the first color light under the excitation of the third color light. Emits second color light.
  • the material of the auxiliary quantum dot unit is different from the material of the second quantum dot unit.
  • the material of the auxiliary quantum unit and the material of the second auxiliary quantum dot unit contain quantum dots of the same type but with different distribution densities; and/or the material of the auxiliary quantum unit and the material of the second auxiliary quantum dot unit contain quantum dots of the same type but with different particle sizes.
  • the material of the auxiliary quantum unit and the material of the second auxiliary quantum dot unit contain quantum dots of different types.
  • An embodiment of the present disclosure further provides a display device, which includes any of the display substrates described above.
  • FIG1 is a top view of an exemplary display substrate.
  • FIG. 2 is a cross-sectional view of an exemplary display substrate.
  • FIG3 is a top view of a display substrate according to a first example of an embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional view of a display substrate according to an embodiment of the present disclosure.
  • FIG5 is a process flow chart of punching holes in a display substrate to form auxiliary electrodes according to an embodiment of the present disclosure.
  • FIG. 6 is a partially enlarged view of the position of the auxiliary electrode of the display substrate according to an embodiment of the present disclosure.
  • FIG7 a is a partial cross-sectional schematic diagram of a first exemplary display substrate according to an embodiment of the present disclosure.
  • FIG7 b is a partial cross-sectional schematic diagram of a display substrate according to a first example of an embodiment of the present disclosure.
  • Figure 8a is a spectrum diagram of different quantum dot material systems.
  • Figure 8b shows the absorption diagrams of different quantum dot material systems.
  • FIG. 9 is a top view of a second exemplary display substrate according to an embodiment of the present disclosure.
  • FIG. 10 is a top view of a display substrate according to a third example of an embodiment of the present disclosure.
  • FIG. 11 is a top view of a display substrate according to a fourth example of an embodiment of the present disclosure.
  • FIG. 12 is a top view of a display substrate according to a fifth example of an embodiment of the present disclosure.
  • FIG. 13 is a top view of a display substrate according to a sixth example of an embodiment of the present disclosure.
  • FIG. 14 is a top view of a display substrate according to a seventh example of an embodiment of the present disclosure.
  • FIG. 15 is a top view of an eighth example of a display substrate according to an embodiment of the present disclosure.
  • the first sub-pixel is a red sub-pixel
  • the second sub-pixel is a green sub-pixel
  • the third sub-pixel is a blue sub-pixel
  • the first color light emitted by the corresponding first sub-pixel is red light
  • the second color light emitted by the second sub-pixel is green light
  • the third color light emitted by the third sub-pixel is blue light.
  • the auxiliary sub-pixel and the second sub-pixel emitting light of the same color that is, the light emitted by the auxiliary sub-pixel is green light.
  • the corresponding first quantum dot unit is a red quantum dot unit
  • the second quantum dot unit is a green quantum dot unit
  • the red quantum dot unit can emit red light under the excitation of blue light
  • the green quantum dot unit and the auxiliary quantum dot unit can emit green light under the excitation of blue light.
  • the first electrode of the light-emitting device is taken as an anode
  • the second electrode is taken as a cathode.
  • Figure 1 is a top view of an exemplary display substrate; as shown in Figure 1, the display substrate includes a base substrate 10, and pixel units 100 arranged in an array on the base substrate 10, each pixel unit 100 includes three sub-pixels, namely a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B.
  • the red sub-pixel R and the blue sub-pixel B in each pixel unit 100 are located in the same row, and are located in a different row from the green sub-pixel G.
  • the display substrate includes at least a driving circuit layer and a light-emitting device layer sequentially located on the base substrate 10.
  • the driving circuit layer includes a pixel driving circuit in each sub-pixel and a signal line electrically connected to the pixel driving circuit;
  • the light-emitting device layer includes a light-emitting device in each sub-pixel.
  • the pixel driving circuit is composed of electrical components such as thin-film transistors and storage capacitors.
  • the light-emitting device can be an OLED, and the anode of the light-emitting device is electrically connected to the pixel driving circuit.
  • FIG. 2 is a cross-sectional view of an exemplary display substrate; as shown in Figure 2, the display substrate is sequentially arranged from bottom to top: a base substrate 10, made of polyimide, with a film thickness range of 1 to 5 ⁇ m; a barrier layer, made of SiO2, with a film thickness range of 100 to 800 nm; a light shielding layer (BSM; back shield mask), made of metal materials such as chromium, nickel, manganese, molybdenum, vanadium, manganese, etc., with a film thickness range of 200 to 1000 nm, and the layer where the first power signal line ELVSS and the second power signal line ELVDD are located, made of metal materials such as aluminum, copper, Tungsten, titanium, molybdenum, gold, etc., with a film thickness range of 100 to 600 nm; buffer layer (Buffer layer), made of SiOx, SiNOx, SiNx, etc., with a film
  • the pixel defining layer has a first accommodating portion, a second accommodating portion, and a third accommodating portion extending through the pixel defining layer along its thickness direction.
  • the light-emitting layer of the light-emitting device in the red sub-pixel R at least covers the first accommodating portion
  • the light-emitting layer of the light-emitting device in the green sub-pixel G at least covers the second accommodating portion
  • the light-emitting layer of the light-emitting device in the blue sub-pixel B at least covers the third accommodating portion.
  • the opening sizes of the first accommodating portion, the second accommodating portion, and the third accommodating portion respectively determine the aperture ratios of the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B.
  • the distance between the accommodating portions refers to the distance between the orthographic projections of the accommodating portions on the base substrate 10
  • the distance between sub-pixels also refers to the distance between the orthographic projections of the accommodating portions on the base substrate 10.
  • the blue sub-pixels B and red sub-pixels R are arranged side by side and alternately in the row direction X.
  • the distance between the blue sub-pixels B and red sub-pixels R in each pixel unit 100 is n; the distance between a red sub-pixel R in each pixel unit 100 and a blue sub-pixel B in an adjacent pixel unit 100 located in the same row is o; the distance between two blue sub-pixels B in adjacent pixel units 100 located in the same column is h; and the distance between two red sub-pixels R in adjacent pixel units 100 located in the same column is l.
  • the ends of the green sub-pixels G in pixel units 100 located in the same row, facing away from the red sub-pixels R, are located on the same horizontal line, and the distance between adjacent green sub-pixels G is d; the distance between green sub-pixels G in pixel units 100 located in the same column is m.
  • the minimum distances between each green subpixel G and the blue subpixel B and red subpixel R in the same pixel unit 100 are h1 and l1, respectively.
  • the minimum distances between each green subpixel G and the blue subpixel B and red subpixel R in the same column and adjacent pixel units 100 are h2 and l2, respectively.
  • the red subpixel R, green subpixel G, and blue subpixel B are all quadrilaterals, meaning that the openings of their respective receiving portions are all quadrilaterals.
  • the opening ratio of the green subpixel G, red subpixel R, and blue subpixel B is x1, where x1 satisfies 1.6:1.4:1 ⁇ x1 ⁇ 1.8:1.2:1.
  • the spacing between subpixels satisfies the following conditions: 1/4*b1 ⁇ n, o ⁇ r1, n and o can be equal or unequal, 1/2*g1 ⁇ d ⁇ 5/2*g1, 2*r1 ⁇ l ⁇ 4*r1, 3*b1 ⁇ h ⁇ 6*b1, g1 ⁇ m ⁇ 2*g1, 1/10*g1 ⁇ h1, l1 ⁇ 1/3*g1, h1 and l1 can be equal or unequal; 1/10*g1 ⁇ h2, l2 ⁇ 1/2*g1, h2 and l2 can be equal or unequal.
  • the auxiliary electrode AE is located at the center of the two green subpixels G, i.e., at positions l/2 and d/2.
  • At least one auxiliary sub-pixel is set between adjacent green sub-pixels, and the auxiliary sub-pixel is configured to emit green light.
  • the performance of the display substrate is improved. For example: controlling the auxiliary sub-pixel and the green sub-pixel to emit light at the same time improves the overall brightness and efficiency of the device.
  • the auxiliary sub-pixel can also be controlled to emit light after the green light-emitting device has been emitting light for a certain period of time.
  • the auxiliary sub-pixel is controlled to emit light after the brightness of the green sub-pixel decays to 80% of the initial value, so as to increase the life of the product.
  • auxiliary accommodating portions when multiple auxiliary accommodating portions are arranged between adjacent second accommodating portions, at least some of the multiple auxiliary accommodating portions are arranged side by side along the column direction Y, and the spacing between the auxiliary accommodating portions arranged side by side along the column direction Y is l5, 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • FIG. 3 is a top view of a display substrate according to the first example of the presently disclosed embodiment. As shown in Figure 3 , in this example, only one auxiliary sub-pixel G' is disposed between adjacent green sub-pixels G in the row direction X.
  • the opening shape of the auxiliary receiving portion of the auxiliary sub-pixel G' is the same as the opening shape of the second receiving portion of the green sub-pixel G, both being quadrilaterals.
  • the aperture ratio ratio of the green sub-pixel G to the auxiliary sub-pixel G' ranges from 0.5 to 1.0.
  • the length of the green sub-pixel G in the row direction X is g1, for example, g1 ⁇ 50 nm.
  • the distance between the top edge of the auxiliary sub-pixel G' and the bottom edge of the red sub-pixel R closest to its top edge is l3
  • the distance between the bottom edge of the auxiliary sub-pixel G' and the top edge of the red sub-pixel R closest to its bottom edge is l4.
  • the sizes and spacings of the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel can be the same as those in FIG. 1 , and thus will not be described one by one here.
  • Figure 4 is a cross-sectional view of a display substrate according to an embodiment of the present disclosure.
  • the auxiliary electrode AE is disposed between the red sub-pixel R and the blue sub-pixel B.
  • the auxiliary electrode AE can also be disposed on the same layer as the anode of the light-emitting device.
  • the auxiliary electrode AE is connected to the first power signal line via a first via hole penetrating the first interlayer insulating layer (comprising the gate insulating layer, interlayer insulating layer, passivation layer, and planarization layer, sequentially disposed in a direction away from the substrate 10).
  • a first via hole penetrating the first interlayer insulating layer (comprising the gate insulating layer, interlayer insulating layer, passivation layer, and planarization layer, sequentially disposed in a direction away from the substrate 10).
  • a second via hole is etched through the pixel defining layer at the corresponding position of the auxiliary electrode AE.
  • FIG5 is a process flow chart for punching holes in a display substrate to form auxiliary electrodes AE according to an embodiment of the present disclosure.
  • the pixel defining layer is first punched using photolithography or laser technology, and then filled with a low-dielectric-constant dielectric material 20, including inorganic materials such as SiOx, SiNOx, SiNx, porous silica, and organic materials such as polyimide, polynorbornene, benzocyclobutene, and PTFE.
  • a low-dielectric-constant dielectric material 20 including inorganic materials such as SiOx, SiNOx, SiNx, porous silica, and organic materials such as polyimide, polynorbornene, benzocyclobutene, and PTFE.
  • punching is performed using photolithography or laser technology to form a first via hole and a second via hole 102.
  • a protective layer 21 of dielectric constant dielectric is formed on the sidewalls of the second via hole 102.
  • the auxiliary electrodes AE are formed in the holes.
  • Materials for the auxiliary electrodes AE include aluminum, copper, tungsten, titanium,
  • FIG6 is a partial enlarged view of the position of the auxiliary electrode AE of the display substrate of an embodiment of the present disclosure.
  • an electron conduction layer 30 is formed on the surface of the auxiliary electrode AE facing away from the base substrate 10.
  • the material of the electron conduction layer 30 includes a metal oxide layer, such as ITO, IGO, ITZO, IGZOd, etc. This layer can increase the conductivity of electrons, thereby reducing the resistivity ⁇ of the film layer, thereby further reducing the product current drop and improving product uniformity.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the quantum dot material in the auxiliary quantum dot unit 402' may include Cd or perovskite (Pb) system materials, and the quantum dot materials in the red quantum dot unit 401 and the green quantum dot unit 402 may include InP, thereby improving the color gamut and efficiency of the light-emitting device.
  • the quantum dots in the auxiliary quantum dot unit 402 ′ and the quantum dots in the green quantum dot unit 402 may be made of the same material, for example, both are made of Cd or perovskite (Pb) system materials. In this case, the only requirement is that the particle size and/or density of the quantum dots in the two are different.
  • the aperture ratio of the auxiliary sub-pixel G' is set to: 5% to 10%. Among them, the aperture ratio is adjusted to meet the RoHS requirements for heavy metals.
  • the Cd quantum dot content can be set to: 1000ppm ⁇ x ⁇ 2000ppm.
  • the quantum dot ink used in the auxiliary quantum dot unit 402' of the auxiliary sub-pixel G' includes perovskite
  • the Pb content in the perovskite quantum dots can be set to: 10000ppm ⁇ x ⁇ 20000ppm, and the rest can be filled with InP material, and its concentration (solid content) range can be set to: 20-40%.
  • Figure 8a is a spectrum of different quantum dot material systems. As shown in Figure 7, the quantum dots of the Cd, perovskite (Pb) system have a narrower FWHM than the InP system, so under the same Peak conditions, their color purity is purer.
  • Figure 8b is the absorption diagram of different quantum dot material systems. As shown in Figure 8, in the blue light band of 430-480nm, the absorption rate of different QD material systems is: Cd>perovskite (Pb)>InP, so its conversion rate also conforms to the above rule.
  • FIG9 is a top view of a display substrate of a second example of an embodiment of the present disclosure; as shown in FIG9 , this example differs from the first example in that two auxiliary sub-pixels G' are disposed between two adjacent green sub-pixels G in the row direction X, namely a first auxiliary sub-pixel G1' and a second auxiliary sub-pixel G2', and the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are disposed side by side in the row direction X.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are of identical size, and their aperture ratio ratio to the green sub-pixel G is in the range of 0.1 to 0.4.
  • the distance between the top edge of the first auxiliary subpixel G1' and the bottom edge of the red subpixel R closest to its top edge is l3
  • the distance between the top edge of the second auxiliary subpixel G2' and the bottom edge of the red subpixel R closest to its top edge is also l3.
  • the distance between the bottom edge of the first auxiliary subpixel G1' and the top edge of the red subpixel R closest to its bottom edge is l4
  • the distance between the bottom edge of the second auxiliary subpixel G2' and the top edge of the red subpixel R closest to its bottom edge is l4.
  • the distance between the first auxiliary sub-pixel G1' and the nearest green sub-pixel G is d1
  • the distance between the second auxiliary sub-pixel G2' and the nearest green sub-pixel G is d2.
  • d1 and d2 may be equal or different. 1/10*g1 ⁇ d1, d2 ⁇ 1/5*g1.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is d3 , and 1/10*g1 ⁇ d3 ⁇ 1/6*g1.
  • the aperture ratios of the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ may be different, for example, the ratio of the aperture ratios thereof is about 1.5 to 4.
  • one of the auxiliary sub-pixels may be selected to be lit according to demand, thereby reducing power consumption.
  • the first auxiliary sub-pixel G1' includes a first auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device
  • the second auxiliary sub-pixel G2' includes a second auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device.
  • the quantum dot materials in the first and second auxiliary quantum dot units can include Cd or perovskite (Pb) system materials; the quantum dot materials in the first and second auxiliary quantum dot units can be the same or different.
  • the quantum dot materials in the red quantum dot unit 401 and the green quantum dot unit 402 can include InP, which can improve the color gamut and efficiency of the light-emitting device.
  • the aperture ratio of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' is set to: 2% to 5%, The two are of the same size.
  • the Cd quantum dot content can be set to: 1000ppm ⁇ x ⁇ 2500ppm;
  • the quantum dot ink used as the material for the first auxiliary quantum dot unit and the second auxiliary quantum dot unit includes perovskite the Pb content in the perovskite quantum dots can be set to: 10000ppm ⁇ x ⁇ 25000ppm, and the remainder can be filled with InP material, and its concentration (solid content) can be set to: 20-40%.
  • auxiliary sub-pixels G' since two auxiliary sub-pixels G' are provided between the two green sub-pixels G, while achieving the same effect as the first example, one or both auxiliary sub-pixels G' may be turned on to improve device performance.
  • FIG10 is a top view of a display substrate of a third example of an embodiment of the present disclosure; as shown in FIG10 , this example is substantially the same as the second example.
  • two auxiliary sub-pixels G' are also disposed between two adjacent green sub-pixels G in the row direction X.
  • These two auxiliary sub-pixels are a first auxiliary sub-pixel G1' and a second auxiliary sub-pixel G2'.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are disposed side by side in the row direction X.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' have different sizes.
  • the aperture ratio ratio of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' to the green sub-pixel G is in the range of 0.1 to 0.6, but the sizes of the two are inconsistent. In the figure, only the area of the first auxiliary sub-pixel G1' is larger than the area of the second auxiliary sub-pixel G2'.
  • the area ratio of the two is x2, and x2 satisfies: 3/2 ⁇ x2 ⁇ 5.
  • the positions of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' can be interchanged left and right.
  • the distance between the top edge of the first auxiliary subpixel G1' and the bottom edge of the red subpixel R closest to its top edge is l3, and the distance between the top edge of the second auxiliary subpixel G2' and the bottom edge of the red subpixel R closest to its top edge is also l3.
  • the distance between the bottom edge of the first auxiliary subpixel G1' and the top edge of the red subpixel R closest to its bottom edge is l4, and the distance between the bottom edge of the second auxiliary subpixel G2' and the top edge of the red subpixel R closest to its bottom edge is l4.
  • the distance between the first auxiliary sub-pixel G1' and the nearest green sub-pixel G is d1
  • the distance between the second auxiliary sub-pixel G2' and the nearest green sub-pixel G is d2.
  • d1 and d2 may be equal or different. 1/10*g1 ⁇ d1, d2 ⁇ 1/5*g1.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is d3 , and 1/10*g1 ⁇ d3 ⁇ 1/6*g1.
  • the ratio of the aperture ratios of the first auxiliary sub-pixel G1 ′ to the second auxiliary sub-pixel G2 ′ is about 1.5 to 4.
  • one of the auxiliary sub-pixels can be selected to be lit according to demand, which can reduce power consumption.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the first auxiliary subpixel G1' includes a first auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device
  • the second auxiliary subpixel G2' includes a second auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device.
  • the quantum dot materials in the first and second auxiliary quantum dot units can include Cd or perovskite (Pb) system materials; the quantum dot materials in the first and second auxiliary quantum dot units can be the same or different.
  • the quantum dot materials in the red and green quantum dot units can include InP, which can improve the color gamut and efficiency of the light-emitting device.
  • the aperture ratio of the first auxiliary sub-pixel G1' is set to 6% to 8%, and the aperture ratio of the second auxiliary sub-pixel G1' is set to 2% to 4%.
  • the Cd quantum dot content can be set to 800ppm ⁇ x ⁇ 1250ppm;
  • the quantum dot ink used in the first and second auxiliary quantum dot units includes perovskite, the Pb content in the perovskite quantum dots can be set to 8000ppm ⁇ x ⁇ 12500ppm, and the remainder can be filled with InP material, and its concentration (solid content) can be set to 20% to 40%.
  • FIG11 is a top view of a display substrate according to a fourth example of the present disclosure. As shown in FIG11 , this example is substantially the same as the first example.
  • two auxiliary sub-pixels G' are disposed between two adjacent green sub-pixels G in the row direction X. These auxiliary sub-pixels are a first auxiliary sub-pixel G1' and a second auxiliary sub-pixel G2'.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are disposed side by side in the column direction Y.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are of identical size, and their aperture ratio ratio to the green sub-pixel G is in the range of 0.1 to 0.4.
  • the distance between the top edge of the first auxiliary subpixel G1' and the bottom edge of the red subpixel R closest to its top edge is l3
  • the distance between the bottom edge of the second auxiliary subpixel G2' and the top edge of the red subpixel R closest to its bottom edge is l4.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is l5, and 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • the spacing between them and the two green sub-pixels G located on either side of them is d1 and d2, respectively.
  • d1 and d2 can be equal or different.
  • the aperture ratios of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' may be different, for example, the ratio of the aperture ratios thereof is about 1.5 to 4.
  • the auxiliary sub-pixel G' may be selected to be lit according to demand, thereby reducing power consumption.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the first auxiliary subpixel G1' includes a first auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device
  • the second auxiliary subpixel G2' includes a second auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device.
  • the quantum dot materials in the first and second auxiliary quantum dot units can include Cd or perovskite (Pb) system materials; the quantum dot materials in the first and second auxiliary quantum dot units can be the same or different.
  • the quantum dot materials in the red and green quantum dot units can include InP, which can improve the color gamut and efficiency of the light-emitting device.
  • the aperture ratios of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are set to 2% to 5%, and the two are of the same size.
  • the Cd quantum dot content can be set to: 1000ppm ⁇ x ⁇ 2000ppm;
  • the Pb content in the perovskite quantum dots can be set to: 10000ppm ⁇ x ⁇ 20000ppm, and the remainder can be filled with InP material, with a concentration (solid content) range of 20% to 40%.
  • FIG12 is a top view of a display substrate according to the fifth example of the present disclosure. As shown in FIG12 , this example is substantially the same as the fourth example.
  • two auxiliary sub-pixels G' are also disposed between two adjacent green sub-pixels G in the row direction X. These two auxiliary sub-pixels are a first auxiliary sub-pixel G1' and a second auxiliary sub-pixel G2'.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' are disposed side by side in the column direction Y.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' have different sizes.
  • the aperture ratio ratio of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' to the green sub-pixel G is in the range of 0.1 to 0.6, but their sizes are different.
  • only the area of the first auxiliary sub-pixel G1' is larger than the area of the second auxiliary sub-pixel G2'.
  • the area ratio of the two is x3, and x3 satisfies the following: 3/2 ⁇ x2 ⁇ 5.
  • the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' can be interchanged.
  • the aperture ratio ratio of the first auxiliary sub-pixel G1' and the second auxiliary sub-pixel G2' to the green sub-pixel G is in the range of 0.1 to 0.6, but their sizes are different.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is l5, and 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • the spacing between them and the two green sub-pixels G located on either side of them is d1 and d2, respectively.
  • d1 and d2 can be equal or different.
  • the ratio of the aperture ratios of the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is about 1.5 to 4.
  • one of the auxiliary sub-pixels can be selected to be lit according to demand, which can reduce power consumption.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the first auxiliary subpixel G1' includes a first auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device
  • the second auxiliary subpixel G2' includes a second auxiliary quantum dot unit located on the light-emitting surface of the light-emitting device.
  • the quantum dot materials in the first and second auxiliary quantum dot units can include Cd or perovskite (Pb) system materials; the quantum dot materials in the first and second auxiliary quantum dot units can be the same or different.
  • the quantum dot materials in the red and green quantum dot units can include InP, which can improve the color gamut and efficiency of the light-emitting device.
  • the distance between the top edge of the first auxiliary subpixel G1' and the bottom edge of the red subpixel R closest to its top edge is l3, and the distance between the top edge of the second auxiliary subpixel G2' and the bottom edge of the red subpixel R closest to its top edge is also l3.
  • the distance between the bottom edge of the first auxiliary subpixel G1' and the top edge of the red subpixel R closest to its bottom edge is l4, and the distance between the bottom edge of the third auxiliary subpixel G3' and the top edge of the red subpixel R closest to its bottom edge is also l4.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is d3
  • the distance between the first auxiliary sub-pixel G1 ′ and the third auxiliary sub-pixel G3 ′ is also d3 , and 1/10*g1 ⁇ d3 ⁇ 1/6*g1.
  • FIG14 is a top view of the display substrate of the seventh example of the embodiment of the present disclosure; as shown in FIG14 , in this example, three auxiliary sub-pixels G' are arranged between two adjacent green sub-pixels G in the row direction X, namely the first auxiliary sub-pixel G1', the second auxiliary sub-pixel G2', and the third auxiliary sub-pixel G3'.
  • the second auxiliary sub-pixel G2' and the third auxiliary sub-pixel G3' are arranged side by side in the row direction X and side by side with the first auxiliary sub-pixel G1' in the column direction Y.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is l5, and the distance between the first auxiliary sub-pixel G1 ′ and the third auxiliary sub-pixel G3 ′ is also l5, and 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • the ratio of the aperture ratios of the first auxiliary sub-pixel G1 ′ to the second auxiliary sub-pixel G2 ′ is about 1.5 to 4.
  • the auxiliary sub-pixel G′ can be selected to be lit according to demand, which can reduce power consumption.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the first auxiliary sub-pixel G1' includes a first auxiliary quantum dot unit located on the light-emitting surface side of the light-emitting device
  • the second auxiliary sub-pixel G2' includes a second auxiliary quantum dot unit located on the light-emitting surface side of the light-emitting device
  • the third auxiliary sub-pixel G3' includes a second auxiliary quantum dot unit located on the light-emitting surface side of the light-emitting device.
  • the quantum dot materials in the first, second, and third auxiliary quantum dot units may include Cd or perovskite (Pb) system materials; the quantum dot materials in the first, second, and third auxiliary quantum dot units may be the same or different.
  • the quantum dot materials in the red and green quantum dot units may include InP, which can improve the color gamut and efficiency of the light-emitting device.
  • the aperture ratio of the first auxiliary sub-pixel G1' is set to 2% to 5%, and the aperture ratio of the second auxiliary sub-pixel G2' and the third auxiliary sub-pixel G' is set to 1% to 4%.
  • the two sizes can be the same or different.
  • the Cd quantum dot content can be set to: 750ppm ⁇ x ⁇ 2500ppm;
  • the quantum dot ink used in the materials of the first auxiliary quantum dot unit, the second auxiliary quantum dot unit, and the third auxiliary quantum dot unit includes perovskite, the Pb content in the perovskite quantum dots can be set to: 7500ppm ⁇ x ⁇ 25000ppm, and the remainder can be filled with InP material, and its concentration (solid content) can be set to: 20% to 40%.
  • FIG15 is a top view of the display substrate of the eighth example of the embodiment of the present disclosure.
  • four auxiliary sub-pixels G' are arranged in an array between two adjacent green sub-pixels G in the row direction X, namely the first auxiliary sub-pixel G1', the second auxiliary sub-pixel G2', the third auxiliary sub-pixel G3', and the fourth auxiliary sub-pixel G4'.
  • the aperture ratio ratio of the first auxiliary sub-pixel G1', the second auxiliary sub-pixel G2', the third auxiliary sub-pixel G3', and the fourth auxiliary sub-pixel G4' to the green sub-pixel G can be the same, and the range is 0.05 to 0.2.
  • the figure takes the example of the first auxiliary sub-pixel G1', the second auxiliary sub-pixel G2', the third auxiliary sub-pixel G3', and the fourth auxiliary sub-pixel G4' having the same aperture size as the green sub-pixel G.
  • the distance between the top edge of the first auxiliary subpixel G1' and the bottom edge of the red subpixel R closest to its top edge is l3
  • the distance between the top edge of the second auxiliary subpixel G2' and the bottom edge of the red subpixel R closest to its top edge is also l3
  • the distance between the bottom edge of the third auxiliary subpixel G3' and the top edge of the red subpixel R closest to its bottom edge is l4
  • the distance between the bottom edge of the fourth auxiliary subpixel G4' and the top edge of the red subpixel R closest to its bottom edge is also l4.
  • the distance between the first auxiliary subpixel G1' and its nearest green subpixel G is d1
  • the distance between the second auxiliary subpixel G2' and its nearest green subpixel G is d2
  • the distance between the third auxiliary subpixel G3' and its nearest green subpixel G is d1
  • the distance between the fourth auxiliary subpixel G4' and its nearest green subpixel G is d2.
  • d1 and d2 may be equal or different. 1/10*g1 ⁇ d1, d2 ⁇ 1/5*g1.
  • the distance between the first auxiliary sub-pixel G1 ′ and the second auxiliary sub-pixel G2 ′ is d3
  • the distance between the third auxiliary sub-pixel G3 ′ and the fourth auxiliary sub-pixel G4 ′ is also d3
  • the distance between the first auxiliary sub-pixel G1 ′ and the third auxiliary sub-pixel G3 ′ is l5, and the distance between the second auxiliary sub-pixel G2 ′ and the fourth auxiliary sub-pixel G4 ′ is also l5, and 1/10*g1 ⁇ l5 ⁇ 1/6*g1.
  • At least two of the first auxiliary sub-pixel G1', the second auxiliary sub-pixel G2', the third auxiliary sub-pixel G3', and the fourth auxiliary sub-pixel G4' have different aperture ratios, where the ratio of the aperture ratio of the one with the largest aperture ratio to the one with the smallest aperture ratio is approximately 1.5 to 4.
  • the auxiliary sub-pixel G' can be selected to be illuminated as needed, thereby reducing power consumption.
  • the quantum dots in the auxiliary quantum dot unit 402' are different from the green quantum dot unit 402. It should be noted that in the embodiments of the present disclosure, the materials of the quantum dot units are considered different if any of the following conditions are met: the types of quantum dots in the quantum dot units are different; the types of quantum dots in the quantum dot units are the same, but the quantum dot distribution density is different; the types of quantum dots in the quantum dot units are the same, but the quantum dot particle size is different, etc.
  • the quantum dot materials in the first auxiliary quantum dot unit, the second auxiliary quantum dot unit, the third auxiliary quantum dot unit, and the fourth auxiliary quantum dot unit may include Cd or perovskite (Pb) system materials; the quantum dot materials in the first auxiliary quantum dot unit, the second auxiliary quantum dot unit, the third auxiliary quantum dot unit, and the fourth auxiliary quantum dot unit may be the same or different.
  • the quantum dot materials in the red quantum dot unit and the green quantum dot unit may include InP, thereby improving the color gamut and efficiency of the light-emitting device.

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Abstract

本公开提供一种显示基板及显示装置，属于显示技术领域。本公开的显示基板，其包括：衬底基板；呈阵列排布的像素单元，设置在所述衬底基板上；所述像素单元包括分别出射不同颜色光的第一子像素、第二子像素和第三子像素，所述第一子像素和第三子像素位于同一行，且与所述第二子像素位于不同行；其中，位于同一行的所述像素单元的第二子像素之间设置有至少一个辅助子像素，且所述辅助子像素与所述第二子像素出射相同颜色的光。

Description

显示基板及显示装置 技术领域
本公开属于显示技术领域，具体涉及一种显示基板及显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)具有自发光、高对比度、柔性可折叠等特性，因此目前被广泛应用在各类显示产品中。量子点(QD)具有波长随粒径连续可调，各项出光均一，光谱纯等特点，因此其对产品的光学显示效果具有提升作用。将二者结合的QD-OLED技术同时具有自发光、高对比度、柔性可折叠、色域高、视角优等特点。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种显示基板及显示装置。
本公开实施例提供一种显示基板，其包括：
衬底基板；
呈阵列排布的像素单元，设置在所述衬底基板上；所述像素单元包括分别出射不同颜色光的第一子像素、第二子像素和第三子像素，所述第一子像素和第三子像素位于同一行，且与所述第二子像素位于不同行；其中，
位于同一行的所述像素单元的第二子像素之间设置有至少一个辅助子像素，且所述辅助子像素与所述第二子像素出射相同颜色的光。
其中，所述显示基板还包括位于所述发光器件所在层靠近所述衬底基板一侧的驱动线路层，所述驱动电路层包括第一电源信号线，所述第一电源信号线通过辅助电极与所述发光器件的第二电极电连接，所述辅助电极在所述衬底基板的正投影，位于在行方向上相邻设置的所述第一子像素的发光器件和所述第三子像素的发光器件在所述衬底基板上的正投影之间。
其中，在所述驱动线路层和所述发光器件的第一电极所在层之间设置有第一层间绝缘层，在所述发光器件的第一电极背离所述衬底基板的一层设置有像素限定层；
所述辅助电极与所述发光器件的第一电极同层设置，且通过贯穿所述第一层间绝缘层的第一过孔与所述第一电源信号线连接；所述像素限定层具有与所述辅助电极位置对应，且沿其厚度方向贯穿的第一通孔；所述第一通孔的侧壁覆盖有保护层。
其中，在所述辅助电极背离所述衬底基板的表面设置有电子传导层。
其中，在所述衬底基板上的正投影位于所述辅助电极在所述衬底基板上的正投影两侧的，所述第一子像素和所述第三子像素分别位于两个不同的所述像素单元。
其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
所述第二容纳部在行方向上的长度为g1；
位于第i行第j列的所述像素单元中的第一容纳部，与位于第i行第j列的所述像素单元中的第二容纳部和位于第i行第(j+1)列的所述像素单元中的第二容纳部之间的各所述辅助容纳部的最小距离为l3；
位于第(i+1)行第j列的所述像素单元中的第一容纳部，与位于第i行第j列的所述像素单元中的第二容纳部和位于第i行第(j+1)列的所述像素单元中的第二容纳部之间的各所述辅助容纳部的最小距离为l4；i和j均为正整数；
l3≥1/6*g1，l4≤1/3*g1。
其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
所述第二容纳部的在行方向上的长度为g1；
相邻设置的所述第二容纳部之间设置有多个所述辅助容纳部，多个所述辅助容纳部中至少部分沿列方向并排设置，且沿列方向并排设置的所述辅助容纳部之间的间距为l5，1/10*g1≤l5≤1/6*g1。
其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
所述第二容纳部在行方向上的长度为g1；
对于在行方向相邻设置的两个所述第二容纳部，以及位于二者之间的各所述辅助容纳部，其中一个所述第二容纳部和所述辅助容纳部的最小距离为d1，另一个所述第二容纳部和所述辅助容纳部的最小距离为d2，d1≥1/10*g1，d2≤1/5*g1。
其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
所述第二容纳部在行方向上的长度为g1；
相邻设置的所述第二容纳部之间设置有多个所述辅助容纳部，多个所述辅助容纳部中至少部分沿行方向并排设置，且沿行方向并排设置的所述辅助容纳部之间的间距为d3，1/10*g1≤d3≤1/6*g1。
其中，在行方向相邻设置的所述第二子像素之间仅设置一个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.5～10。
其中，在行方向相邻设置的所述第二子像素之间沿行方向并排设置的多个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.1～0.6。
其中，在行方向相邻设置的所述第二子像素之间沿列方向并排设置的多个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.1～0.6。
其中，在行方向相邻设置的所述第二子像素之间设置有多个所述辅助子像素，且多个所述辅助子像素中部分沿行方向并排设置，部分沿列方向并排设置；所述辅助子像素与所述第二子像素的开口率比值为0.05～0.4。
其中，在行方向相邻设置的所述第二子像素之间的所述辅助子像素的数量为多个，且至少部分所述辅助子像素的开口率不同。
其中，在行方向相邻设置的所述第二子像素之间的多个所述辅助子像素，其中开口率最大的一者与开口率最小的一者的比值为1.5～4。
其中，所述第一子像素、第二子像素、第三子像素和所述辅助子像素均包括出射第三颜色光的发光器件；所述第一子像素还包括位于所述发光器件出光面侧的第一量子点单元，所述第二子像素还包括位于所述发光器件出光面侧的第二量子点单元，所述辅助子像素还包括位于所述发光器件出光面侧的辅助量子点单元；
所述第一量子点单元被配置为在第三颜色光的激发下，出射第一颜色光，第二量子点单元和辅助量子点单元均被配置为在第三颜色光的激发下， 出射第二颜色光。
其中，所述辅助量子点单元的材料和所述第二量子点单元的材料不同。
其中，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类相同，分布密布不同；和/或，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类相同，量子点的粒径不同。
其中，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类不同。
本公开实施例还提供一种显示装置，其包括上述任一所述的显示基板。
附图说明
图1为一种示例性的显示基板俯视图。
图2为一种示例性的显示基板的截面图。
图3为本公开实施例的第一种示例的显示基板俯视图。
图4为本公开实施例的显示基板的截面图。
图5本公开实施例的显示基板的打孔形成辅助电极的工艺流程图。
图6为本公开实施例的显示基板的辅助电极位置的局部放大图。
图7a为本公开实施例的第一种示例的显示基板的局部截面示意图。
图7b为本公开实施例的第一种示例的显示基板的局部截面示意图。
图8a为不同量子点材料体系的光谱图。
图8b为不同量子点材料体系的吸收图。
图9为本公开实施例的第二种示例的显示基板俯视图。
图10为本公开实施例的第三种示例的显示基板俯视图。
图11为本公开实施例的第四种示例的显示基板俯视图。
图12为本公开实施例的第五种示例的显示基板俯视图。
图13为本公开实施例的第六种示例的显示基板俯视图。
图14为本公开实施例的第七种示例的显示基板俯视图。
图15为本公开实施例的第八种示例的显示基板俯视图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在对本公开实施例进行描述前需要说明的是，本公开实施例中仅以第一子像素为红色子像素，第二子像素为绿色子像素，第三子像素为蓝色子像素为例。相应的第一子像素出射的第一颜色光则为红光，第二子像素出射的第二颜色光则为绿光，第三子像素出射的第三颜色光则为蓝光。而对于辅助子像素与第二子像素出射相同颜色的光，也就是说辅助子像素所出射的光为绿光。相应的第一量子点单元则为红色量子点单元，第二量子点单元则为绿色量子点单元；红色量子点单元可以在蓝光的激发下出射红光，绿色量子点单元和辅助量子点单元可以在蓝光的激发下出射绿光。在本公开实施例中以发光器件的第一电极为阳极，第二电极阴极为例。
图1为一种示例性的显示基板俯视图；如图1所示，显示基板包括衬底基板10，以及设置在衬底基板10上的呈阵列排布的像素单元100，每个像素单元100包括三个子像素，分别为红色子像素R、绿色子像素G和蓝色子像素B，每个像素单元100中的红色子像素R与蓝色子像素B位于同一行，与绿色子像素G位于不同行。
具体的，显示基板至少包括依次位于衬底基板10上的驱动电路层和发光器件层。其中，驱动电路层包括每个子像素中的像素驱动电路，以及电连接像素驱动电路的信号线；发光器件层包括每个子像素的发光器件。像素驱动电路由薄膜晶体管、存储电容等电学元件组成。发光器件可以采用OLED，发光器件的阳极与像素驱动电路电连接。当然，显示基板还可以包括位于发光器件出光面侧的量子点层，量子点层包括位于红色子像素R中的红色量子点单元和位于绿色子像素G中的绿色量点单元。当显示基板包括量子点层时，各个发光器件均为出射蓝光的蓝色发光器件。
接下来结合显示基板中的各膜层结构进行具体说明。图2为一种示例性的显示基板的截面图；如图2所示，显示基板从下往上依次为：衬底基板10，材料为聚酰亚胺，其膜厚范围：1～5um；Barrier层，材料为SiO2，其膜厚范围：100～800nm；遮光层(BSM；back shield mask)，材料为金属材料如：铬、镍、锰、钼、钒、锰等，膜厚范围：200～1000nm，以及第一电源信号线ELVSS和第二电源信号线ELVDD所在层，材料为金属材料如：铝、铜、钨、钛、钼、金等，其膜厚范围：100～600nm；缓冲层(Buffer层)，材料为SiOx、SiNOx、SiNx等，其膜厚范围：200～800nm；薄膜晶体管的有源层Active，材料为金属氧化物、非晶硅、多晶硅等；栅极绝缘层(GI；Gate Insulator)，材料为SiOx、SiNOx、SiNx等，其膜厚范围：100～400nm；栅金属层，至少包括薄膜晶体管的栅极(Gate)和栅线，材料为铜、钼、钨、钛等，其膜厚范围：200～1000nm；层间绝缘层(Inner layer Dielectric layer)层，材料为SiNOx、SiNx等，其膜厚范围：500～2000nm；源漏电极层(SD；Source and drain)，至少包括薄膜晶体管的源极和漏极、数据线等，材料为铜、钼、钨、钛等，其膜厚范围：100～400nm；钝化层(PVX；passivation layer)层，其材料为SiOx、SiNOx、SiNx等，膜厚范围为：200～600nm；平坦化层(PLN；Planarization)层，材料为聚酰亚胺，其膜厚范围：1～5um；发光器件的阳极层(Anode)，材料为Ag、Mg、Al、Pt、Au、Ni、Nd等金属或ITO、IGO、ITZO、IGZOd等金属氧化物，其膜厚范围：100～200nm；像素限定层(PDL；Pixel define layer)层，材料为聚酰亚胺，其膜厚范围：1～3um。当然，在像素限定层之上还设置有发光器件的发光层、阴极层等，附图中未示意。进一步的，为了降低发光器件的阴极电阻，在两个绿色子像素G之间，通过包括但不限于激光打孔的方式形成贯穿层间绝缘层、钝化层、平坦化层和像素限定出的过孔，以使发光器件的阴极通过与其阳极同层设置的辅助电极AE电连接第一电源信号线ELVSS。通过该种方式可以有效的降低薄膜的电阻率，减小面电阻，降低电流，提升产品的均一性。需要说明的是辅助电极AE可以通过转接电极与第一电源信号线ELVSS电连接，转接电极可以位于源漏金属层SD。
另外，需要说明的是，像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部和第三容纳部，红色子像素R中的发光器件的发光层至少覆盖第一容纳部，绿色子像素G中的发光器件的发光层至少覆盖第二容纳部，蓝色子像素B中的发光器件的发光层至少覆盖第三容纳部。第一容纳部、第二容纳部和第三容纳部的开口尺寸分别决定了红色子像素R、绿色子像素G和蓝色子像素B的开口率。而在本公开实施例中，容纳部之间的距离是指，容纳部在衬底基板10上正投影之间的距离，子像素之间的距离也是指容纳部在衬底基板10上正投影之间的距离。
继续参照图1，每一行像素单元100中蓝色子像素B和红色子像素R在行方向X上并排且交替设置，每个像素单元100中的蓝色子像素B和红色子像素R之间的距离为n；每个像素单元100中红色子像素R，和与之位于同一行且相邻设置的像素单元100中的蓝色子像素B之间的距离为o；位于同一列且相邻设置的像素单元100中的两个蓝色子像素B之间的距离为h；位于同一列且相邻设置的像素单元100中的两个红色子像素R之间的距离为l。位于同一行的像素单元100中的绿色子像素G远离红色子像素R的一端位于同一水平线上，且相邻设置的绿色子像素G之间的距离为d；位于同一列的像素单元100中的绿色子像素G之间的距离为m。每个绿色子像素G和与之位于同一像素单元100中的蓝色子像素B和红色子像素R之间的最小距离分别为h1，l1；每个绿色子像素G和与之位于同一列、且相邻的像素单元100中的蓝色子像素B和红色子像素R之间的最小距离分别为h2，l2；红色子像素R、绿色子像素G和蓝色子像素B均为四边形，也即各自的容纳部的开口均为四边形；绿色子像素G、红色子像素R和蓝色子像素B的开口比为x1，x1满足1.6：1.4：1≤x1≤1.8：1.2：1。设定绿色子像素G、红色子像素R和蓝色子像素B在方向上的长度和列方向Y行的宽度分别为g1，g2，r1，r2，b1，b2，其中50nm≤g1，g2≤200nm，50nm≤r1，r2≤150nm，20nm≤b1，b2≤100nm。其中，各子像素的尺寸满足如下条件：50nm≤g1，g2≤200nm，50nm≤r1，r2≤150nm，20nm≤b1，b2≤100nm。各子像素间的间距满足如下条件：1/4*b1≤n，o≤r1，n，o可以相等，也可以不等，1/2*g1≤d≤5/2*g1，2*r1≤l≤4*r1，3*b1≤h≤6*b1，g1≤m≤2*g1，1/10*g1≤h1，l1≤1/3*g1，h1，l1可以相等，也可以不等；1/10*g1≤h2，l2≤1/2*g1，h2，l2可以相等，也可以不等。辅助电极AE位于两个绿色子像素G的中心位置，即l/2及d/2处。
在上述显示基板的基础上，为了优化显示基板的性能，在相邻设置的绿色子像素之间设置至少一个辅助子像素，辅助子像素被配置为出射绿光。通过设置出射绿光的辅助子像素，并控制辅助子像素发光，实现显示基板性能的提升。例如：控制辅助子像素和绿色子像素同时发光，提升器件的整体亮度和效率。为了减低产品功耗，还可以控制在绿色发光器件发光一定时间后控制辅助子像素发光，例如在绿色子像素的亮度衰减至初始值的80％后控制辅助子像素发光，以增加产品寿命。
在一些示例中，绿色子像素之间的辅助子像素的数量可以仅为一个，也可以为多个，当辅助子像素的数量为多个时，多个辅助子像素可以沿行方向X并排设置，也可以沿列方向Y并排设置，也可以是包括沿行方向X并排和列方向Y并排设置的辅助子像素。
其中，无论辅助子像素数量为一个还是多个，当包括辅助子像素时，显示基板的像素限定层则要设置用于容纳辅助子像素的发光器件的发光层的辅助容纳部，第二容纳部在行方向X上的长度为g1；位于第i行第j列的像素单元中的第一容纳部，与位于第i行第j列的像素单元中的第二容纳部和位于第i行第(j+1)列的像素单元中的第二容纳部之间的各辅助容纳部的最小距离为l3；位于第(i+1)行第j列的像素单元中的第一容纳部，与位于第i行第j列的像素单元中的第二容纳部和位于第i行第(j+1)列的像素单元中的第二容纳部之间的各辅助容纳部的最小距离为l4；i和j均为正整数；l3≥1/6*g1，l4≤1/3*g1。进一步的，当相邻设置的第二容纳部之间设置有多个辅助容纳部，多个辅助容纳部中至少部分沿列方向Y并排设置，且沿列方向Y并排设置的辅助容纳部之间的间距为l5，1/10*g1≤l5≤1/6*g1。
其中，对于在行方向X相邻设置的两个第二容纳部，以及位于二者之间的各辅助容纳部，其中一个第二容纳部和辅助容纳部的最小距离为d1，另一个第二容纳部和辅助容纳部的最小距离为d2，d1≥1/10*g1，d2≤1/5*g1。进一步的，相邻设置的第二容纳部之间设置有多个辅助容纳部，多个辅助容纳部中至少部分沿行方向X并排设置，且沿行方向X并排设置的辅助容纳部之间的间距为d3，1/10*g1≤d3≤1/6*g1。
以下结合具体示例进行说明。
第一种示例：图3为本公开实施例的第一种示例的显示基板俯视图；如图3所示，在该示例中，在行方向X相邻设置的绿色子像素G之间仅设置一个辅助子像素G＇，辅助子像素G＇的辅助容纳部的开口形状与绿色子像素G的第二容纳部的开口形状相同，均为四边形。绿色子像素G和辅助子像素G＇的开口率比值范围为0.5～1.0。绿色子像素G在行方向X上的长度为g1，例如g1≥50nm。
其中，位于第i行第j列的像素单元100中的第一容纳部，与位于第i行第j列的像素单元100中的第二容纳部和位于第i行第(j+1)列的像素单元100中的第二容纳部之间的各辅助容纳部的最小距离为l3；位于第(i+1)行第j列的像素单元100中的第一容纳部，与位于第i行第j列的像素单元100中的第二容纳部和位于第i行第(j+1)列的像素单元100中的第二容纳部之间的各辅助容纳部的最小距离为l4。也就是说，图3中辅助子像素G＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，辅助子像素G＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，辅助子像素G＇和位于其两侧的两个绿色子像素G之间的间距分别为d1，d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
在该示例中，控制辅助子像素G＇和绿色子像素G同时发光，提升器件的整体亮度和效率。为了减低产品功耗，还可以控制在绿色发光器件发光一定时间后控制辅助子像素G＇发光，例如在绿色子像素G的亮度衰减至初始值的80％后控制辅助子像素G＇发光，以增加产品寿命。而且在暗态环境下(例如：低灰阶64灰阶以下)，还可以单独点亮辅助子像素G＇，提升产品对比度，降低产品功耗。
对于该示例中的红色子像素R、绿色子像素G和蓝色子像像素的尺寸，以及间距均可以与图1中相同，故在此不在一一说明。
在一些示例中，图4为本公开实施例的显示基板的截面图；如图4所示，由于在相邻设置的绿色子像素G之间设置辅助子像素G＇，故与图1中不同的是，在该示例中需要将辅助电极AE设置在红色子像素R和蓝色子像素B之间。辅助电极AE同样可以与发光器件的阳极同层设置，此时辅助电极AE则需要通过贯穿第一层间绝缘层(包括沿背离衬底基板10方向依次设置的栅极绝缘层、层间绝缘层、钝化层和平坦化层)的第一过孔与第一电源信号线连接。为了使得辅助电极AE与发光器件的阴极电连接，还需要在辅助电极AE对应位置处的像素限定层进行刻蚀形成第二过孔。由于红色子像素R的第一容纳部和蓝色子像素B的第三容纳部之间间距较窄，在其中进行辅助电极AE的第一过孔制备后，可能会造成蓝色子像素B的发光器件和红色子像素R的发光器件在正常工作时的电流横向漏电，引起串扰现象，因此需要对打孔位置进行结构优化。优选的，图5本公开实施例的显示基板的打孔形成辅助电极AE的工艺流程图；如图5所示，在制备辅助电极AE时，先通过光刻或激光技术对像素限定层进行打孔,再在其上填空低介电常数介质的材料20，包括无机物如SiOx、SiNOx、SiNx、多孔二氧化硅等，有机物如聚酰亚胺、聚降冰片烯、苯并环丁烯和PTFE等。再通过光刻或激光技术进行打孔形成第一过孔和第二过孔102，此时第二过孔102的侧壁上形成有介电常数介质的保护层21，最后再在孔中进行辅助电极AE的制备，辅助电极AE的材料包括铝、铜、钨、钛、钼、金等。
图6为本公开实施例的显示基板的辅助电极AE位置的局部放大图；如图6所示，更进一步的，为了进一步降低电阻，在辅助电极AE背离衬底基板10的表面形成电子传导层30，其材料包括金属氧化物层，例如ITO、IGO、ITZO、IGZOd等，该层可以增加电子的传导性，从而降低膜层的电阻率ρ，从而进一步降低产品电流降，提升产品的均一性。在该种情况下，可以减少辅助电极AE的数量，优选的仅在位于不同像素单元100的红色子像素R和蓝色子像素B之间形成辅助电极AE。也即，辅助电极AE在衬底基板10上的正投影，位于两个不同的像素单元100的第一容纳部和第三容纳部在衬底基板10上的正投影之间。
在一些示例中，图7a为本公开实施例的第一种示例的显示基板的局部截面示意图；图7b为本公开实施例的第一种示例的显示基板的局部截面示意图；如图7a和7b所示，各子像素的发光器件出射蓝光，在红色子像素R的发光器件的出光面侧设置红色量子点单元401，在绿色子像素G的发光器件的出光面侧设置绿色量子点单元402，在辅助子像素G＇的发光器件的出光面侧设置辅助量子点单元402＇。
在一些示例中，辅助量子点单元402＇材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在一个示例中，辅助量子点单元402＇中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料，红色量子点单元401和绿色量子点单元402中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。当然， 辅助量子点单元402’中的量子点和绿色量子点单元402中的量子点材料种类可以相同，例如均采用Cd或钙钛矿(Pb)体系的材料，此时只要保证二者量子点粒径和/或密度不同。
不同材料体系光特性对比如下表一。
表一：
辅助子像素G＇的开口率设置为：5％～10％。其中，开口率的局对峙为满足RoHS对于重金属的要求，当辅助子像素G＇的辅助量子点单元402’采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：1000ppm≤x≤2000ppm。当辅助子像素G＇的辅助量子点单元402’采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：10000ppm≤x≤20000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。图8a为不同量子点材料体系的光谱图，由图7知，Cd,钙钛矿(Pb)体系的量子点相较于InP体系，其FWHM更窄，因此在相同Peak条件下，其色纯度更纯。图8b为不同量子点材料体系的吸收图，由图8知，在430～480nm的蓝光波段，不同QD材料体系的吸收率为:Cd＞钙钛矿(Pb)＞InP，因此其在转换率上也符合以上规律。
第二种示例：图9为本公开实施例的第二种示例的显示基板俯视图；如图9所示，该示例与第一种示例不同的是，在行方向X上相邻设置的两个绿色子像素G之间设置有两个辅助子像素G＇，分别为第一辅助子像素G1＇和第二辅助子像素G2＇，且第一辅助子像素G1＇和第二辅助子像素G2＇在行方向X并排设置。第一辅助子像素G1＇和第二辅助子像素G2＇的尺寸大小一致，二者与绿色子像素G的开口率比值范围均在0.1～0.4。
在一些示例中，由于第一辅助子像素G1＇和第二辅助子像素G2＇的尺寸一致，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的顶边和与其顶边最近的红色子像素R的底边之间的距离同样为l3。第一辅助子像素G1＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4，第二辅助子像素G2＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和与之最近的绿色子像素G之间距离为d1，第二辅助子像素G2＇和与之最近的绿色子像素G之间距离为d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇之间的距离为d3，1/10*g1≤d3≤1/6*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率也可以不等，例如二者开口率的比值在1.5～4左右。此时可以根据需求选择其中一个辅助子像素被点亮，这样可以降低功耗。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元401和绿色量子点单元402中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
第一辅助子像素G1＇和第二辅助子像素G2＇开口率设置为：2％～5％， 两者的大小一致。为满足RoHS对于重金属的要求，当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：1000ppm≤x≤2500ppm；当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：10000ppm≤x≤25000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
在该示例中由于两个绿色子像素G之间设置两个辅助子像素G＇，在具有第一示例相同的效果时，还可以选择开启其中一个或者两个辅助子像素G＇以提升器件性能。
第三种示例：图10为本公开实施例的第三种示例的显示基板俯视图；如图10所示，该示例与第二种示例大致相同，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间同样设置有两个辅助子像素G＇，分别为第一辅助子像素G1＇和第二辅助子像素G2＇，且第一辅助子像素G1＇和第二辅助子像素G2＇在行方向X并排设置。与第二种示例不同的是，第一辅助子像素G1＇和第二辅助子像素G2＇的尺寸不同。第一辅助子像素G1＇和第二辅助子像素G2＇与绿色子像素G的开口率比值范围均为：0.1～0.6，但两者的大小不一致，图中仅以第一辅助子像素G1＇的面积大于第二辅助子像素G2＇的面积，其二者的面积比为x2，x2满足：3/2≤x2≤5，第一辅助子像素G1＇和第二辅助子像素G2＇位置可以左右互换。
第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的顶边和与其顶边最近的红色子像素R的底边之间的距离同样为l3。第一辅助子像素G1＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4，第二辅助子像素G2＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和与之最近的绿色子像素G之间距离为d1，第二辅助子像素G2＇和与之最近的绿色子像素G之间距离为d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇之间的距离为d3，1/10*g1≤d3≤1/6*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率的比值在1.5～4左右。此时可以根据需求选择其中的辅助子像素被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402＇材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
第一辅助子像素G1＇的开口率设置为：6％～8％，第一辅助子像素G1＇的开口率设置为：2％～4％。为满足RoHS对于重金属的要求，当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：800ppm≤x≤1250ppm；当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：8000ppm≤x≤12500ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
第四种示例：图11为本公开实施例的第四种示例的显示基板俯视图；如图11所示，该示例与第一种示例大致相同，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间设置有两个辅助子像素G＇，分别为第一辅助子像素G1＇和第二辅助子像素G2＇，且第一辅助子像素G1＇和第二辅助子像素G2＇在列方向Y并排设置。第一辅助子像素G1＇和第二辅助子像素G2＇的尺寸大小一致，二者与绿色子像素G的开口率比值范围均在0.1～0.4。
在一些示例中，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇两者间的距离为l5，1/10*g1≤l5≤1/6*g1。
其中，由于第一辅助子像素G1＇和第二辅助子像素G2＇在行方向X上的长度相同，故二者和位于各其两侧的两个绿色子像素G之间的间距分别为d1，d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率也可以不等，例如二者开口率的比值在1.5～4左右。此时可以根据需求选择其中的辅助子像素G＇被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402＇材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇开口率设置为：2％～5％，两者的大小一致。为满足RoHS对于重金属的要求，当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：1000ppm≤x≤2000ppm；当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：10000ppm≤x≤20000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
第五种示例：图12为本公开实施例的第五种示例的显示基板俯视图；如图12所示，该示例与第四种示例大致相同，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间同样设置有两个辅助子像素G＇，分别为第一辅助子像素G1＇和第二辅助子像素G2＇，且第一辅助子像素G1＇和第二辅助子像素G2＇在列方向Y并排设置。与第四种示例不同的是，第一辅助子像素G1＇和第二辅助子像素G2＇的尺寸不同。第一辅助子像素G1＇和第二辅助子像素G2＇与绿色子像素G的开口率比值范围均为：0.1～0.6，但两者的大小不一致，图中仅以第一辅助子像素G1＇的面积大于第二辅助子像素G2＇的面积，其二者的面积比为x3，x3满足：3/2≤x2≤5，第一辅助子像素G1＇和第二辅助子像素G2＇位置可以左右互换。第一辅助子像素G1＇和第二辅助子像素G2＇与绿色子像素G的开口率比值范围均为：0.1～0.6，但两者的大小不一致，图中仅以第一辅助子像素G1＇的面积大于第二辅助子像素G2＇的面积，其二者的面积比为x2，x2满足：3/2≤x2≤5，第一辅助子像素G1＇和第二辅助子像素G2＇位置可以左右互换。
在一些示例中，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4。例如：1/6*g1≤l3，l4≤1/3*g1， 其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇两者间的距离为l5，1/10*g1≤l5≤1/6*g1。
其中，由于第一辅助子像素G1＇和第二辅助子像素G2＇在行方向X上的长度相同，故二者和位于各其两侧的两个绿色子像素G之间的间距分别为d1，d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率的比值在1.5～4左右。此时可以根据需求选择其中一个辅助子像素被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402＇材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元和第二辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
第一辅助子像素G1＇的开口率设置为：6％～8％，第一辅助子像素G1＇的开口率设置为：2％～4％。为满足RoHS对于重金属的要求，当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：800ppm≤x≤1250ppm；当第一辅助量子点单元和第二辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：8000ppm≤x≤12500ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
第六种示例：图13为本公开实施例的第六种示例的显示基板俯视图；如图13所示，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间设置有三个辅助子像素G＇，分别为第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇，其中，第二辅助子像素G2＇和第三辅助子像素G3＇在列方向Y上并排设置，与第一辅助子像素G1＇在行方向X并排设置。其中，第一辅助子像素G1＇与第二辅助子像素G2＇和第三辅助子像素G3＇的位置可以互换。第一辅助子像素G1＇与绿色子像素G的开口率比值范围均在0.1～0.4。第二辅助子像素G2＇与绿色子像素G的开口率和第三辅助子像素G3＇与绿色子像素G的开口率比值可以相同，范围均在0.1～0.4。
在一些示例中，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的顶边和与其顶边最近的红色子像素R的底边之间的距离同样为l3；第一辅助子像素G1＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4，第三辅助子像素G3＇的底边和与其底边最近的红色子像素R的顶边之间的距离同样为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和与之最近的绿色子像素G之间距离为d1，第二辅助子像素G2＇和第三辅助子像素G3＇均和与之最近的绿色子像素G之间距离为d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇之间的距离为d3，第一辅助子像素G1＇和第三辅助子像素G3＇之间的距离同样为d3，1/10*g1≤d3≤1/6*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率的比值在1.5～4左右。此时可以根据需求选择其中一个辅助子像素被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402’材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元，第三辅助子像素G3＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元、第二辅助量子点单元和第三辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元、第二辅助量子点单元和第三辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
第一辅助子像素G1＇开口率设置为：2％～5％，第二辅助子像素G2＇和三辅助子像素G＇开口率设置为：1％～4％，两者的大小可以一致，也可不一致。为满足RoHS对于重金属的要求，当第一辅助量子点单元、第二辅助量子点单元、第三辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：750ppm≤x≤2500ppm；当第一辅助量子点单元和、第二辅助量子点单元、第三辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：7500ppm≤x≤25000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
第七种示例：图14为本公开实施例的第七种示例的显示基板俯视图；如图14所示，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间设置有三个辅助子像素G＇，分别为第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇，其中，第二辅助子像素G2＇和第三辅助子像素G3＇在行方向X上并排设置，与第一辅助子像素G1＇在列方向Y并排设置。其中，第一辅助子像素G1＇与第二辅助子像素G2＇和第三辅助子像素G3＇的位置可以互换。第一辅助子像素G1＇与绿色子像素G的开口率比值范围均在0.1～0.4。第二辅助子像素G2＇与绿色子像素G的开口率和第三辅助子像素G3＇与绿色子像素G的开口率比值可以相同，范围均在0.1～0.4。
在一些示例中，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3；第二辅助子像素G2＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4，第三辅助子像素G3＇的底边和与其底边最近的红色子像素R的顶边之间的距离同样为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇之间的距离为l5，第一辅助子像素G1＇和第三辅助子像素G3＇之间的距离同样为l5，1/10*g1≤l5≤1/6*g1。
其中，第一辅助子像素G1＇和与之最近的两个绿色子像素G之间距离分别为d1和d2，第二辅助子像素G2＇和与之最近的绿色子像素G之间距离分别为d1，第三辅助子像素G3＇均和与之最近的绿色子像素G之间距离为d2，d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
在一些示例中，第一辅助子像素G1＇和第二辅助子像素G2＇的开口率的比值在1.5～4左右。此时可以根据需求选择其中的辅助子像素G＇被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402＇材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元，第三辅助子像素G3＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元、第二辅助量子点单元和第三辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元、第二辅助量子点单元和第三辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
第一辅助子像素G1＇开口率设置为：2％～5％，第二辅助子像素G2＇和三辅助子像素G＇开口率设置为：1％～4％，两者的大小可以一致，也可不一致。为满足RoHS对于重金属的要求，当第一辅助量子点单元、第二辅助量子点单元、第三辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：750ppm≤x≤2500ppm；当第一辅助量子点单元和、第二辅助量子点单元、第三辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：7500ppm≤x≤25000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
第八种示例：图15为本公开实施例的第八种示例的显示基板俯视图；如图15所示，在该示例中，在行方向X上相邻设置的两个绿色子像素G之间设置有四个呈阵列排布的辅助子像素G＇，分别为第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇和第四辅助子像素G4＇。第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇和第四辅助子像素G4＇与绿色子像素G的开口率比值可以相同，范围均在0.05～0.2。图中以第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇和第四辅助子像素G4＇与绿色子像素G的开口尺寸相同为例。
在一些示例中，第一辅助子像素G1＇的顶边和与其顶边最近的红色子像素R的底边之间的距离为l3，第二辅助子像素G2＇的顶边和与其顶边最近的红色子像素R的底边之间的距离同样为l3；第三辅助子像素G3＇的底边和与其底边最近的红色子像素R的顶边之间的距离为l4，第四辅助子像素G4＇的底边和与其底边最近的红色子像素R的顶边之间的距离同样为l4。例如：1/6*g1≤l3，l4≤1/3*g1，其中，l3，l4可以相等，也可以不等。
其中，第一辅助子像素G1＇和与之最近的绿色子像素G之间距离为d1，第二辅助子像素G2＇与之最近的绿色子像素G之间距离为d2，第三辅助子像素G3＇和与之最近的绿色子像素G之间距离为d1，第四辅助子像素G4＇与之最近的绿色子像素G之间距离为d2d1和d2可以相等，也可以不等。其中，1/10*g1≤d1，d2≤1/5*g1。
其中，第一辅助子像素G1＇和第二辅助子像素G2＇之间的距离为d3，第三辅助子像素G3＇和第四辅助子像素G4＇之间的距离同样为d3，1/10*g1≤d3≤1/6*g1。
其中，第一辅助子像素G1＇和第三辅助子像素G3＇之间的距离为l5，第二辅助子像素G2＇和第四辅助子像素G4＇之间的距离同样为l5，1/10*g1≤l5≤1/6*g1。
在一些示例中，第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇和第四辅助子像素G4＇中至少两者开口率不等，其中开口率最大的一者和最小的一者的开口率的比值在1.5～4左右。此时可以根据需求选择其中的辅助子像素G＇被点亮，这样可以降低功耗。
在一些示例中，辅助量子点单元402’材料中的量子点和绿色量子点单元402材料不同。需要说明的是，本公开实施例中量子点单元的材料只要满足以下之一，即认为二者材料不同，量子点单元的材料中量子点的种类不同；量子点单元的材料中量子点的种类相同，量子点分布密度不同；量子点单元的材料中量子点的种类相同，量子点粒径不同等等。
在该示例中，第一辅助子像素G1＇包括位于发光器件出光面侧第一辅助量子点单元，第二辅助子像素G2＇包括位于发光器件出光面侧的第二辅助量子点单元，第三辅助子像素G3＇包括位于发光器件出光面侧的第二辅助量子点单元，第四辅助子像素G4＇包括位于发光器件出光面侧的第二辅助量子点单元。其中，第一辅助量子点单元、第二辅助量子点单元、第三辅助量子点单元和第四辅助量子点单元中的量子点材料可以包括Cd或钙钛矿(Pb)体系的材料；第一辅助量子点单元、第二辅助量子点单元、第三辅助量子点单元和第四辅助量子点单元中的量子点材料可以相同也可以不同。红色量子点单元和绿色量子点单元中的量子点材料可以包括InP，以此可以提升发光器件的色域及效率。
其中，第一辅助子像素G1＇、第二辅助子像素G2＇、第三辅助子像素G3＇和第四辅助子像素G4＇的开口率设置为：1％～4％，四者的大小可以一致，也可不一致。为满足RoHS对于重金属的要求，当第一辅助量子点单元、第二辅助量子点单元、第三辅助量子点单元、第四辅助量子点单元的材料采用的量子点墨水包括Cd量子点时，其中的Cd量子点含量可以设置为：600ppm≤x≤2500ppm；当第一辅助量子点单元和、第二辅助量子点单元、第三辅助量子点单元、第四辅助量子点单元的材料采用的量子点墨水包括钙钛矿时，钙钛矿量子点中Pb的含量可设置为：6000ppm≤x≤25000ppm，其余部分可由InP材料进行填充，其浓度(固含量)范围可设置为：20～40％。
对于该示例中的其余结构均与上述示例相同，故在此不再赘述。
本公开实施例还提供一种显示装置，其包括上述任意一种显示基板。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (20)

  1. 一种显示基板，其包括：
    衬底基板；
    呈阵列排布的像素单元，设置在所述衬底基板上；所述像素单元包括分别出射不同颜色光的第一子像素、第二子像素和第三子像素，所述第一子像素和第三子像素位于同一行，且与所述第二子像素位于不同行；其中，
    位于同一行的所述像素单元的第二子像素之间设置有至少一个辅助子像素，且所述辅助子像素与所述第二子像素出射相同颜色的光。
  2. 根据权利要求1所述的显示基板，其中，还包括位于所述发光器件所在层靠近所述衬底基板一侧的驱动线路层，所述驱动电路层包括第一电源信号线，所述第一电源信号线通过辅助电极与所述发光器件的第二电极电连接，所述辅助电极在所述衬底基板的正投影，位于在行方向上相邻设置的所述第一子像素的发光器件和所述第三子像素的发光器件在所述衬底基板上的正投影之间。
  3. 根据权利要求2所述的显示基板，其中，在所述驱动线路层和所述发光器件的第一电极所在层之间设置有第一层间绝缘层，在所述发光器件的第一电极背离所述衬底基板的一层设置有像素限定层；
    所述辅助电极与所述发光器件的第一电极同层设置，且通过贯穿所述第一层间绝缘层的第一过孔与所述第一电源信号线连接；所述像素限定层具有与所述辅助电极位置对应，且沿其厚度方向贯穿的第一通孔；所述第一通孔的侧壁覆盖有保护层。
  4. 根据权利要求2所述的显示基板，其中，在所述辅助电极背离所述衬底基板的表面设置有电子传导层。
  5. 根据权利要求4所述的显示基板，其中，在所述衬底基板上的正投影位于所述辅助电极在所述衬底基板上的正投影两侧的，所述第一子像素和所述第三子像素分别位于两个不同的所述像素单元。
  6. 根据权利要求1所述的显示基板，其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
    所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
    所述第二容纳部在行方向上的长度为g1；
    位于第i行第j列的所述像素单元中的第一容纳部，与位于第i行第j列的所述像素单元中的第二容纳部和位于第i行第(j+1)列的所述像素单元中的第二容纳部之间的各所述辅助容纳部的最小距离为l3；
    位于第(i+1)行第j列的所述像素单元中的第一容纳部，与位于第i行第j列的所述像素单元中的第二容纳部和位于第i行第(j+1)列的所述像素单元中的第二容纳部之间的各所述辅助容纳部的最小距离为l4；i和j均为正整数；
    l3≥1/6*g1，l4≤1/3*g1。
  7. 根据权利要求1所述的显示基板，其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
    所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
    所述第二容纳部的在行方向上的长度为g1；
    相邻设置的所述第二容纳部之间设置有多个所述辅助容纳部，多个所述辅助容纳部中至少部分沿列方向并排设置，且沿列方向并排设置的所述辅助容纳部之间的间距为l5，1/10*g1≤l5≤1/6*g1。
  8. 根据权利要求1所述的显示基板，其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
    所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
    所述第二容纳部在行方向上的长度为g1；
    对于在行方向相邻设置的两个所述第二容纳部，以及位于二者之间的各所述辅助容纳部，其中一个所述第二容纳部和所述辅助容纳部的最小距离为d1，另一个所述第二容纳部和所述辅助容纳部的最小距离为d2，d1≥1/10*g1，d2≤1/5*g1。
  9. 根据权利要求1所述的显示基板，其中，所述显示基板还包括设置在所述发光器件的第一电极背离所述衬底基板上的像素限定层，所述像素限定层具有沿其厚度方向贯穿的第一容纳部、第二容纳部、第三容纳部和辅助容纳部；
    所述第一子像素中的发光器件的发光层覆盖所述第一容纳部，所述第二子像素中的发光器件的发光层覆盖所述第二容纳部，所述第三子像素中的发光器件的发光层覆盖所述第三容纳部，所述辅助子像素中的发光器件的发光层覆盖所述辅助容纳部；
    所述第二容纳部在行方向上的长度为g1；
    相邻设置的所述第二容纳部之间设置有多个所述辅助容纳部，多个所述辅助容纳部中至少部分沿行方向并排设置，且沿行方向并排设置的所述辅助容纳部之间的间距为d3，1/10*g1≤d3≤1/6*g1。
  10. 根据权利要求1所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间仅设置一个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.5～10。
  11. 根据权利要求1所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间沿行方向并排设置的多个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.1～0.6。
  12. 根据权利要求1所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间沿列方向并排设置的多个所述辅助子像素，所述辅助子像素与所述第二子像素的开口率比值为0.1～0.6。
  13. 根据权利要求1所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间设置有多个所述辅助子像素，且多个所述辅助子像素中部分沿行方向并排设置，部分沿列方向并排设置；所述辅助子像素与所述第二子像素的开口率比值为0.05～0.4。
  14. 根据权利要求1所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间的所述辅助子像素的数量为多个，且至少部分所述辅助子像素的开口率不同。
  15. 根据权利要求14所述的显示基板，其中，在行方向相邻设置的所述第二子像素之间的多个所述辅助子像素，其中开口率最大的一者与开口率最小的一者的比值为1.5～4。
  16. 根据权利要求1-15中任一项所述的显示基板，其中，所述第一子像素、第二子像素、第三子像素和所述辅助子像素均包括出射第三颜色光的发光器件；所述第一子像素还包括位于所述发光器件出光面侧的第一量子点单元，所述第二子像素还包括位于所述发光器件出光面侧的第二量子点单元，所述辅助子像素还包括位于所述发光器件出光面侧的辅助量子点单元；
    所述第一量子点单元被配置为在第三颜色光的激发下，出射第一颜色光，第二量子点单元和辅助量子点单元均被配置为在第三颜色光的激发下，出射第二颜色光。
  17. 根据权利要求16所述的显示基板，其中，所述辅助量子点单元的材料和所述第二量子点单元的材料不同。
  18. 根据权利要求17所述的显示基板，其中，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类相同，分布密布不同；和/或，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类相同，量子点的粒径不同。
  19. 根据权利要求18所述的显示基板，其中，所述辅助量子单元的材料和第二辅助量子点单元的材料中量子点的种类不同。
  20. 一种显示装置，其包括权利要求1-19中任一项所述的显示基板。
PCT/CN2024/084002 2024-03-27 2024-03-27 显示基板及显示装置 Pending WO2025199785A1 (zh)

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CN113707822A (zh) * 2021-08-27 2021-11-26 成都京东方光电科技有限公司 显示基板、显示面板及显示装置
CN113991041A (zh) * 2021-10-27 2022-01-28 京东方科技集团股份有限公司 一种显示基板及显示装置
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CN113097417A (zh) * 2021-03-30 2021-07-09 云南创视界光电科技有限公司 Oled显示基板及显示装置
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