WO2025190079A1 - 一种有源光器件以及与有源光器件相关的装置 - Google Patents

一种有源光器件以及与有源光器件相关的装置

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Publication number
WO2025190079A1
WO2025190079A1 PCT/CN2025/079233 CN2025079233W WO2025190079A1 WO 2025190079 A1 WO2025190079 A1 WO 2025190079A1 CN 2025079233 W CN2025079233 W CN 2025079233W WO 2025190079 A1 WO2025190079 A1 WO 2025190079A1
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WO
WIPO (PCT)
Prior art keywords
electrode
optical device
active optical
layer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/079233
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English (en)
French (fr)
Other versions
WO2025190079A9 (zh
Inventor
汪莱
李振浩
彭莉媛
卢诗强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Huawei Technologies Co Ltd
Original Assignee
Tsinghua University
Huawei Technologies Co Ltd
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Publication date
Application filed by Tsinghua University, Huawei Technologies Co Ltd filed Critical Tsinghua University
Publication of WO2025190079A1 publication Critical patent/WO2025190079A1/zh
Publication of WO2025190079A9 publication Critical patent/WO2025190079A9/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Definitions

  • the present application relates to the field of light-emitting devices, and in particular to an active optical device and a device related to the active optical device.
  • LEDs light-emitting diodes
  • VCSELs vertical-cavity surface-emitting lasers
  • the device junction temperature rises due to increased current and limited heat dissipation.
  • the optical power no longer maintains a linear increase, exhibiting a roll-off phenomenon.
  • the more integrated and smaller the device the earlier its output optical power rolls off as current increases, reaching its optical power output limit. Therefore, there is an urgent need for a light source that simultaneously meets the requirements of high integration, high modulation rate, and high scattering performance.
  • the embodiments of the present application provide an active optical device and an apparatus related to the active optical device, which can achieve a better heat dissipation effect of the active optical device. On the basis of effective heat dissipation, it also avoids the decrease in the modulation rate of the active optical device, while meeting the requirements of high integration, high modulation rate and high heat dissipation performance.
  • an embodiment of the present application provides an active optical device, which includes an epitaxial layer, a first heat-conducting structure and at least one electrode.
  • the epitaxial layer and the first heat-conducting structure are insulated.
  • the epitaxial layer includes a first epitaxial structure, an active layer, and a second epitaxial structure distributed in a vertical direction, and the active layer is located between the first epitaxial structure and the second epitaxial structure.
  • One of the electrodes is electrically connected to the first epitaxial structure or the second epitaxial structure.
  • the active layer and the first epitaxial structure form a raised mesa, and the first heat-conducting structure is located on the outside of the side wall of the raised mesa.
  • the embodiment of the present application provides a first heat-conducting structure near the active layer on the sidewall of the raised mesa. This makes rational use of space and achieves good heat dissipation without requiring a large-area first heat-conducting structure. Furthermore, in scenarios where the first heat-conducting structure is made of metal, effective heat dissipation is achieved while also avoiding the reduction in the modulation rate of the active optical device caused by the large-area distribution of the first heat-conducting structure made of metal. This simultaneously achieves high integration, high modulation rate, and high heat dissipation performance.
  • the at least one electrode includes a first electrode and a second electrode, wherein the first electrode is electrically connected to the first epitaxial structure, and the second electrode is electrically connected to the second epitaxial structure.
  • the first electrode and the second electrode may be a P electrode (positive electrode) and an N electrode (negative electrode), respectively, so that the epitaxial layer has a PN junction function.
  • light is emitted from the active layer in a first direction away from the first epitaxial structure.
  • the first electrode is located on one side of the first epitaxial structure in a second direction
  • the second electrode is located on one side of the second epitaxial structure in the second direction, with the first direction and the second direction being opposite.
  • the first electrode and the second electrode are located at different heights in the vertical direction. Since the first electrode and the second electrode do not need to be designed to be the same height, the overall process is simpler.
  • the first electrode and the second electrode are at the same height in the vertical direction.
  • the first electrode and the second electrode are designed to be at the same height to facilitate subsequent connection of the first electrode and the second electrode to the driving circuit respectively by flip-chip bonding.
  • the active optical device further includes a third electrode and a second thermally conductive structure, the second thermally conductive structure being located between the second and third electrodes, the third electrode being electrically connected to the second epitaxial structure, and the second electrode being electrically connected to the third electrode via the second thermally conductive structure.
  • the second thermally conductive structure is utilized to elevate the second electrode, which is simple to implement and more conducive to improved heat dissipation.
  • the active optical device further includes a height compensation layer, which is located on a side of the first thermally conductive structure away from the raised mesa.
  • a height compensation layer which is located on a side of the first thermally conductive structure away from the raised mesa.
  • the height compensation layer is also located outside the sidewalls of the second electrode.
  • the second thermally conductive structure is located between the second electrode and the third electrode, i.e., the second electrode is elevated to the same height as the first electrode by the second thermally conductive structure, the height compensation layer is also located outside the sidewalls of the second thermally conductive structure.
  • the height compensation layer primarily serves to provide support for portions of the first and second electrodes, thereby facilitating the elevation of the second electrode to the same height as the first electrode.
  • the active optical device further includes a first distributed Bragg reflector (DBR) structure.
  • DBR distributed Bragg reflector
  • Light is emitted from the active layer in a first direction away from the first epitaxial structure.
  • the first DBR structure is located on one side of the top of the raised mesa in a second direction, the first direction being opposite to the second direction.
  • the first DBR structure is positioned above the raised mesa.
  • the first DBR structure reflects light emitted vertically upward, thereby improving the efficiency of light emission downward.
  • the active optical device further includes a second DBR structure located to one side of the second epitaxial structure in the first direction.
  • the second DBR structure can enhance light transmission, further improving the efficiency of downward light emission.
  • the first and second DBR structures can form a resonant structure, thereby improving the performance of the active optical device based on the Purcell effect.
  • the first DBR structure further includes a through hole, and one of the electrodes located on one side of the first DBR structure in the second direction is electrically connected to the first epitaxial structure through the through hole, which helps to ensure that the first electrode and the second electrode are at the same height at the top of the first DBR structure.
  • the active optical device further includes a substrate, and the substrate is located on a side of the second epitaxial structure away from the active layer.
  • the substrate includes a lens structure, and the light emitted from the active layer passes through the lens structure. It should be understood that the lens structure can reduce the divergence angle of light, thereby improving light extraction efficiency.
  • light is emitted from the active layer in a second direction away from the second epitaxial structure, and a portion of the first epitaxial structure on top of the raised mesa is electrically connected to the first electrode.
  • the first electrode does not completely cover the top of the raised mesa, thereby ensuring that light from the active layer is emitted in a vertically upward direction.
  • the second electrode is located on one side of the second epitaxial structure in the second direction, that is, the first electrode and the second electrode are located on the same side of the active optical device, which has good feasibility.
  • the active optical device further includes a second DBR structure, which is located on one side of the second epitaxial structure in a first direction opposite to the second direction.
  • the second DBR structure reflects light emitted vertically downward, thereby improving the efficiency of upward light emission.
  • the second electrode is located on one side of the second epitaxial structure in the first direction, and the first direction is opposite to the second direction, that is, the first electrode and the second electrode are respectively located on the upper and lower sides of the active optical device, which expands the implementation method of this solution.
  • the active optical device further includes a substrate made of conductive material, the substrate is located on one side of the second epitaxial structure in the first direction, and the second electrode is located on one side of the substrate in the first direction, further expanding the implementation method of this solution.
  • the first heat-conducting structure wraps the sidewalls of the raised mesas, which is equivalent to wrapping the active layer with the first heat-conducting structure, and is more conducive to improving the heat dissipation effect.
  • the first heat-conducting structure is made of metal material
  • the active optical device further includes an insulating layer located between the first heat-conducting structure and the epitaxial layer. Using the first heat-conducting structure made of metal material is beneficial for improving heat dissipation.
  • the first heat-conducting structure is made of insulating material, which is beneficial to simplifying the process and reducing costs.
  • the active optical device further includes a current spreading layer and a contact metal layer.
  • the first epitaxial structure is electrically connected to the first electrode through the current spreading layer, and the second epitaxial structure is electrically connected to the second electrode through the contact metal layer, enriching the implementation methods of this solution.
  • an embodiment of the present application provides an active optical device array, which includes a plurality of active optical devices as described in any embodiment of the first aspect.
  • an embodiment of the present application provides an optical transmitting device, which includes a driving module and an active optical device as described in any embodiment of the first aspect, where the active optical device is specifically a light source, and the driving module is used to drive the active optical device to emit light.
  • an embodiment of the present application provides an optical transceiver device, which includes an optical receiving device and an optical transmitting device as described in the third aspect, wherein the optical transmitting device is used to transmit light and the optical receiving device is used to receive light.
  • an embodiment of the present application provides an optical display device, which includes an imaging module and an active optical device as described in any embodiment of the first aspect, where the active optical device is specifically a light source, and the imaging module is used to perform imaging based on the light emitted by the active optical device.
  • an active optical device includes an epitaxial layer, a first thermally conductive structure, and at least one electrode.
  • the epitaxial layer includes a first epitaxial structure, an active layer, and a second epitaxial structure distributed along a vertical direction.
  • the active layer is located between the first epitaxial structure and the second epitaxial structure.
  • the active layer and the first epitaxial structure form a raised mesa, and the first thermally conductive structure is located outside the sidewall of the raised mesa.
  • the embodiment of the present application arranges the first thermally conductive structure near the sidewall of the raised mesa, making rational use of space and achieving good heat dissipation without the need for a large-area first thermally conductive structure. Furthermore, in scenarios where the first thermally conductive structure is made of metal, effective heat dissipation is avoided while also avoiding the decrease in the modulation rate of the active optical device caused by the large-area distribution of the first thermally conductive structure made of metal, thereby simultaneously achieving high integration, high modulation rate, and high heat dissipation performance.
  • FIG1 is a schematic structural diagram of a light source in an embodiment of the present application.
  • FIG2 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG3 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG4 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG5 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG6 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG7 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG8 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG9 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG10 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG11 is a schematic structural diagram of another light source in an embodiment of the present application.
  • FIG12 is a schematic structural diagram of a light source array according to an embodiment of the present application.
  • FIG13 is a schematic structural diagram of an optical transmitting device according to an embodiment of the present application.
  • FIG14 is a schematic structural diagram of an optical transceiver device according to an embodiment of the present application.
  • FIG15 is a schematic structural diagram of an optical display device in an embodiment of the present application.
  • the embodiments of the present application provide an active optical device and an apparatus related to the active optical device, which can achieve a better heat dissipation effect of the active optical device, and on the basis of effective heat dissipation, it also avoids the decrease in the modulation rate of the active optical device, while meeting the requirements of high integration, high modulation rate and high heat dissipation performance.
  • the active optical device provided in the embodiments of the present application includes but is not limited to a light source, an electro-optical modulator and a semiconductor optical amplifier (Semi-conductor Optical Amplifier, SOA).
  • the light source has high requirements for heat dissipation performance, the structure of the active optical device provided in the present application will be mainly introduced below using the light source as an example.
  • the light source can specifically be a light emitting diode (LED) or a vertical cavity surface emitting laser (VCSEL) array, etc.
  • the light source provided by the embodiment of the present application can be applied to various scenes that require light emission, for example, scenes such as optical signal transmission and optical imaging display.
  • the light source provided by the embodiment of the present application is introduced in detail below, wherein the light source has a multi-layer structure.
  • the embodiments of the present application are all displayed with a side view of the longitudinal section of the light source along the vertical direction.
  • the direction of the multi-layer structure distribution based on the side view of the longitudinal section of the light source is defined as the vertical direction, and the direction perpendicular to the vertical direction is defined as the horizontal direction.
  • the distribution direction of the multi-layer structure of the epitaxial layer in the light source is the vertical direction.
  • the embodiments of the present application all introduce the upper and lower relationships between the various layers of the structure in the light source by placing the light source in the forward direction, wherein the multi-layer structure in the light source is made on a substrate, and the substrate is at the bottom, which is the scene where the light source is placed in the forward direction.
  • the light source can also be turned over to realize the flip-chip.
  • Those skilled in the art can also redefine the upper and lower relationships between the various layers of the structure in the scene based on the introduction of the embodiment of the present application.
  • FIG1 is a schematic structural diagram of a light source in an embodiment of the present application.
  • the light source includes an epitaxial layer 1, a first electrode 21, a second electrode 22, and a first heat-conducting structure 31.
  • the epitaxial layer 1 includes a first epitaxial structure 11, an active layer 12, and a second epitaxial structure 13 distributed in a vertical direction.
  • the active layer 12 is located above the second epitaxial structure 13
  • the first epitaxial structure 11 is located above the active layer 12
  • the first epitaxial structure 11 is electrically connected to the first electrode 21, and the second epitaxial structure 13 is electrically connected to the second electrode 22.
  • the first electrode 21 and the second electrode 22 can be a P electrode (positive electrode) and an N electrode (negative electrode), respectively, so that the epitaxial layer 1 has a PN junction function.
  • the first electrode 21 and the second electrode 22 can both be loaded with current; or, one of the electrodes is loaded with current and the other is grounded.
  • the first electrode 21 is located above the first epitaxial structure 11, and the second electrode 22 is located above the second epitaxial structure 13.
  • When current is injected into the active layer 12, light can be emitted from the active layer 12. In the example of Figure 1, the light is emitted in a vertically downward direction, while the light emitted in a vertically upward direction will be blocked by the first electrode 21.
  • the multi-layer structure of the light source is made on the substrate 4, that is, the epitaxial layer 1 is located above the substrate.
  • the substrate 4 can be retained in the final structure of the light source, or the substrate 4 can be peeled off, which is subject to actual design requirements and is not limited here.
  • the embodiments of the present application can have multiple equivalent descriptions of the vertical relationship between the various layers of the light source.
  • the first electrode 21 is located above the first epitaxial structure 11 can also be described as “the first electrode 21 is located on the side of the first epitaxial structure 11 in the vertical upward direction", or as “the first epitaxial structure 11 is located on the side of the first electrode 21 in the vertical downward direction”.
  • the following description will be described as “... is located above" or “... is located below".
  • Those skilled in the art can also replace it with other descriptions in the above examples.
  • the epitaxial layer 1 is etched to form a raised mesa.
  • the etching depth must reach the second epitaxial structure 13, while also leaving a portion of the second epitaxial structure 13 unetched to facilitate electrical connection between the second epitaxial structure 13 and the second electrode 22. That is, in a horizontal cross-section of the light source, the coverage area of the unetched portion of the second epitaxial structure 13 must be greater than the coverage area of the etched first epitaxial structure 11 and the coverage area of the etched active layer 12, thereby ensuring that the first epitaxial structure 11 and the active layer 12 are located on the formed raised mesa.
  • the first thermally conductive structure 31 is located near the sidewalls of the raised mesa, thereby being as close as possible to the location of the active layer 12. Specifically, a circle of the first thermally conductive structure 31 can be formed around the sidewalls of the raised mesa, i.e., the entire sidewall of the raised mesa is surrounded by the first thermally conductive structure 31, or a portion of the sidewall of the raised mesa is surrounded by the first thermally conductive structure 31.
  • the first thermally conductive structure 31 is used to enhance heat dissipation and reduce the junction temperature of the device.
  • the active layer 12 emits light, which is the core heat source, this design rationally utilizes space and achieves good heat dissipation without requiring a large first thermally conductive structure.
  • This application does not limit the vertical height of the active layer 12.
  • the vertical height of the active layer 12 can be flush with the top of the raised mesa, providing support for a portion of the first electrode 21.
  • the first heat-conducting structure 31 is insulated from the epitaxial layer 1 to avoid the first epitaxial structure 11 being electrically connected to the second epitaxial structure 13 through the first heat-conducting structure 31, which is equivalent to avoiding the electrical connection between the first electrode 21 and the second electrode 22 and causing a short circuit.
  • the first heat-conducting structure 31 is made of a metal heat-conducting material, such as silver (Ag) with high thermal conductivity, and the light source also includes an insulating layer 5, which is located between the first heat-conducting structure 31 and the epitaxial layer 1, thereby achieving insulation between the first heat-conducting structure 31 and the epitaxial layer 1.
  • an insulating layer 5 can be attached to the surface of the epitaxial layer 1, and a through hole can be opened at a corresponding position on the insulating layer 5, so that the first epitaxial structure 11 is electrically connected to the first electrode 21, and the second epitaxial structure 13 is electrically connected to the second electrode 22. Accordingly, the first heat-conducting structure 31 surrounds the outside of the insulating layer to which the sidewalls of the raised mesa are attached.
  • Figure 2 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • the first heat-conducting structure 31 is made of an insulating material, such as diamond or silicon carbide. This eliminates the need for an insulating layer attached to the surface of the epitaxial layer 1.
  • the first heat-conducting structure 31 can be directly attached to the sidewalls of the raised mesas, simplifying the process and reducing costs.
  • the present application does not limit whether the first electrode 21 and the second electrode 22 are of equal height in the vertical direction.
  • the tops of the first electrode 21 and the second electrode 22 are at different heights in the vertical direction.
  • the tops of the first electrode 21 and the second electrode 22 are at the same height in the vertical direction. It should be understood that designing the first electrode 21 and the second electrode 22 to be of equal height in the vertical direction facilitates the use of flip-chip bonding to connect the first electrode 21 and the second electrode 22 to the drive circuit, respectively, which has a better practical effect.
  • FIG3 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • another method different from that shown in FIG2 can also be used to achieve the same height of the first electrode 21 and the second electrode 22 in the vertical direction.
  • the light source also includes a third electrode 23 and a second heat-conducting structure 32, the second heat-conducting structure 32 is located above the third electrode 23, and the second electrode 22 is located above the second heat-conducting structure 32, so that the first electrode 21 and the second electrode 22 are at the same height in the vertical direction.
  • the second heat-conducting structure 32 is made of a metal heat-conducting material, and the second electrode 22 is electrically connected to the third electrode 23 through the second heat-conducting structure 32.
  • the light source further includes a height compensation layer 6 , wherein the height compensation layer 6 is primarily used to provide support for portions of the first electrode 21 and the second electrode 22 , thereby helping to raise the second electrode 22 to the same height as the first electrode 21 .
  • the height compensation layer 6 is located on the side of the first heat-conducting structure away from the raised mesa.
  • the height compensation layer 6 can fill the space between the height of the first electrode 21 and the height of the second epitaxial structure 13 in the vertical direction, excluding the raised mesa, the first heat-conducting structure, and the second heat-conducting structure.
  • the height compensation layer 6 can fill the space between the height of the first electrode 21 and the height of the second epitaxial structure 13 in the vertical direction, excluding the raised mesa, the first heat-conducting structure, and the second electrode. It should be understood that the first heat-conducting structure 31 , the second heat-conducting structure 32 , and the height compensation layer 6 can generally be designed to be of the same height.
  • Figure 4 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • a gap is provided between the first heat-conducting structure 31 and the height compensation layer 6, and a gap is also provided between the second heat-conducting structure 33 and the height compensation layer 6.
  • This effectively avoids problems such as extrusion cracking caused by the different thermal expansion coefficients of the first heat-conducting structure 31 and the height compensation layer 6.
  • it effectively avoids problems such as extrusion cracking caused by the different thermal expansion coefficients of the second heat-conducting structure 33 and the height compensation layer 6.
  • FIG5 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • the light source may optionally further include a current spreading layer 7 and a contact metal layer 8.
  • the first epitaxial structure 11 is electrically connected to the first electrode 21 via the current spreading layer 7, and the second epitaxial structure 13 is electrically connected to the second electrode 22 via the contact metal layer 8.
  • the current spreading layer 7 has conductive properties, it is not necessarily made of a metal material.
  • the contact metal layer 8 is used to form a good ohmic contact. In one possible scenario, a portion of the contact metal layer 8 may surround the raised mesa to form a ring structure.
  • FIG. 6 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • a lens structure 41 is fabricated based on substrate 4.
  • Substrate 4 is made of a light-transmitting material, allowing light emitted from active layer 12 to pass through lens structure 41. It should be understood that the use of lens structure 41 can reduce the divergence angle of light, thereby improving light extraction efficiency.
  • Figure 7 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • the light source also includes a first distributed Bragg reflector (DBR) structure 7.
  • DBR distributed Bragg reflector
  • the first DBR structure 7 is positioned above the raised mesa.
  • the first DBR structure 7 reflects light emitted vertically upward, thereby improving the efficiency of light emission downward.
  • This application does not limit the specific coverage area of the first DBR structure 7 in a horizontal cross-section of the light source; generally, the first DBR structure 7 should cover at least a portion of the raised mesa.
  • a portion of the first epitaxial structure 11 at the top of the raised mesa is electrically connected to the first electrode 21.
  • the first electrode 21 electrically connected to the portion of the first epitaxial structure 11 at the top of the raised mesa extends horizontally to the location of the through hole, then extends through the through hole to the top of the first DBR structure 7, and forms a certain area of coverage at the top of the first DBR structure 7.
  • the overall shape of the first electrode 21 is similar to a "C" shape as shown in Figure 7. It should be understood that the first electrode 21 in this embodiment may also adopt other shapes such as a "T" shape, which is not limited to this specific shape.
  • FIG8 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • the light source further includes a second DBR structure 8 , which is located below the second epitaxial structure 13 .
  • the second DBR structure 8 can enhance the transmission of light, thereby further improving the efficiency of downward light emission.
  • the first DBR structure 7 and the second DBR structure 8 can form a resonant structure, thereby improving the performance of the light source based on the Purcell effect.
  • FIG. 7 and 8 are implemented by adding a first DBR structure 7 and a second DBR structure 8 to the embodiment shown in Figure 3 .
  • the embodiments shown in Figures 1 , 2 , 4 , or 5 may be modified with the addition of a first DBR structure 7 and a second DBR structure 8 , without limitation.
  • the light sources provided in the aforementioned embodiments are described using downwardly emitting light as an example. The following describes several embodiments in which light sources emit light upwardly.
  • FIG9 is a schematic diagram of the structure of another light source in an embodiment of the present application.
  • the first electrode 21 is electrically connected to the first epitaxial structure 11 from the top of the raised mesa, but the first electrode 21 cannot completely cover the top of the raised mesa, thereby ensuring that light from the active layer 12 is emitted in a vertically upward direction, that is, a portion of the first epitaxial structure 11 at the top of the raised mesa is electrically connected to the first electrode 21.
  • the second electrode 22 is located above the second epitaxial structure 13.
  • the light source also includes a second DBR structure 8, the light source does not include a substrate, and the second DBR structure 8 is located below the second epitaxial structure 13. In this scenario, the second DBR structure 8 reflects the light emitted vertically downward, thereby improving the efficiency of the upward light output.
  • Figure 10 is a schematic diagram of the structure of another light source in an embodiment of the present application. Similar to the embodiment shown in Figure 9, as shown in Figure 10, the first electrode 21 is electrically connected to the first epitaxial structure 11 from the top of the raised mesa. However, the first electrode 21 does not completely cover the top of the raised mesa, thereby ensuring that light from the active layer 12 is emitted vertically upward. Unlike the embodiment shown in Figure 9, as shown in Figure 10, the light source does not include a substrate, and the second electrode 22 is located below the second epitaxial structure 13.
  • FIG11 is a schematic diagram of the structure of another light source in an embodiment of the present application. Similar to the embodiments shown in FIG9 and FIG10 , as shown in FIG11 , the first electrode 21 is electrically connected to the first epitaxial structure 11 from the top of the raised mesa, but the first electrode 21 does not completely cover the top of the raised mesa, thereby ensuring that light from the active layer 12 is emitted in a vertically upward direction. Unlike the embodiments shown in FIG9 and FIG10 , as shown in FIG11 , the light source includes a substrate 4, and the second electrode 22 is located below the substrate 4. The substrate 4 is made of a conductive material, and the second electrode 22 is electrically connected to the second epitaxial structure 13 through the substrate 4.
  • the embodiment of the present application sets a first heat-conducting structure on the side wall of the raised table near the active layer, which makes rational use of the space and can achieve a better heat dissipation effect without setting a large-area first heat-conducting structure.
  • effective heat dissipation it also avoids the decrease in the modulation rate of the light source, while meeting the requirements of high integration, high modulation rate and high heat dissipation performance.
  • Figure 12 is a schematic diagram of the structure of a light source array in an embodiment of the present application. As shown in Figure 12, multiple light sources are arranged to form a light source array, wherein the light sources in the light source array can adopt the light sources described in any of the embodiments described in Figures 1 to 11 above. It should be understood that all light sources in the light source array can be controlled uniformly, or each light source can be controlled independently, the specific details of which are not limited here.
  • Figure 13 is a schematic diagram of the structure of an optical transmitter according to an embodiment of the present application.
  • the optical transmitter includes a light source array and a driver array.
  • the light sources in the light source array can be any of the light sources described in any of the embodiments described in Figures 1 to 11 above.
  • the driver array is configured to output current to electrodes in the light source, thereby driving the light source to emit light.
  • the optical transmitter also includes a lens array configured to perform beam shaping on the light emitted by the light source array.
  • FIG14 is a schematic diagram of the structure of an optical transceiver device in an embodiment of the present application.
  • the optical transceiver device includes an optical transmitter and an optical receiver, wherein the optical transmitter can adopt the design shown in FIG13 .
  • the optical receiver includes a photodetector (PD) array and an amplifier array.
  • the photodetector array converts the received optical signal into an electrical signal and outputs the electrical signal to the amplifier array.
  • the amplifier array can specifically include a trans-impedance amplifier (TIA) and a limiting amplifier (LA).
  • TIA trans-impedance amplifier
  • LA limiting amplifier
  • Figure 15 is a structural schematic diagram of a light display device in an embodiment of the present application.
  • the light display device includes a light source array and an imaging module.
  • the light source in the light source array can adopt the light source introduced in any of the embodiments of Figures 1 to 11 above.
  • the imaging module is used to perform imaging based on the light emitted by the light source.
  • different light sources in the light source array can be used to emit red light, blue light and green light, respectively, so as to achieve RGB display.
  • all light sources in the light source array emit light of the same wavelength, and the imaging module performs color conversion on the light of the same wavelength, so as to achieve RGB display.
  • the light display device may also have a communication function.
  • two light display devices can transmit optical signals to each other, or the light display device can be used to interact with other communication devices for optical signals.
  • the wavelength of the communication light is not limited here.

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Abstract

本申请实施例公开了一种有源光器件以及与有源光器件相关的装置，能实现有源光器件较好的散热效果，在有效散热的基础上还避免了有源光器件调制速率的下降，同时满足高集成度、高调制速率和高散热性能。有源光器件包括外延层、第一导热结构和至少一个电极。外延层与第一导热结构之间是绝缘的。外延层包括在竖直方向上分布的第一外延结构、有源层和第二外延结构，有源层位于第一外延结构与第二外延结构之间。其中一个电极与第一外延结构或第二外延结构电连接。有源层和第一外延结构形成凸起台面，第一导热结构位于凸起台面的侧壁外侧。

Description

一种有源光器件以及与有源光器件相关的装置
本申请要求于2024年03月13日提交国家知识产权局、申请号为202410288973.3、发明名称为“一种有源光器件以及与有源光器件相关的装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及发光器件领域，尤其涉及一种有源光器件以及与有源光器件相关的装置。
背景技术
短距高密并行光互连是当下备受瞩目的方案之一，该方案需要使用到紧密排列的光源阵列，如发光二极管(Light Emitting Diode，LED)或垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser，VCSEL)阵列。当光源阵列需要同时满足高集成度和高调制速率时，往往由于需要更小的电流注入孔径、更高的电流密度、更小的排列间距而导致严重的热累积，从而导致结温上升，器件性能下降。性能下降包括光功率衰减、斜效率下降、电光转换效率下降等。
例如，环境温度不变，但由于电流增大而散热能力有限，导致器件结温上升，在大电流下光功率不再能维持线性增加，表现出光功率滚降(Roll Over)的变化。其中，集成度越高且尺寸越小的器件，其输出光功率随电流增加会越早出现功率滚降，从而达到光功率输出的极限。因此，目前亟需一种同时满足高集成度、高调制速率和高散射性能的光源。
发明内容
本申请实施例提供了一种有源光器件以及与有源光器件相关的装置，能实现有源光器件较好的散热效果，在有效散热的基础上还避免了有源光器件调制速率的下降，同时满足高集成度、高调制速率和高散热性能。
第一方面，本申请实施例提供了一种有源光器件，有源光器件包括外延层、第一导热结构和至少一个电极。外延层与第一导热结构之间是绝缘的。外延层包括在竖直方向上分布的第一外延结构、有源层和第二外延结构，有源层位于第一外延结构与第二外延结构之间。其中一个电极与第一外延结构或第二外延结构电连接。有源层和第一外延结构形成凸起台面，第一导热结构位于凸起台面的侧壁外侧。应理解，本申请实施例所说的竖直方向指的就是外延层的结构分布方向，下文中类似的描述都可以根据这里的定义来理解。
在该实施方式中，考虑到有源层是通过注入电流发光，是核心的发热来源，本申请实施例在凸起台面侧壁靠近有源层的位置设置第一导热结构，合理利用了空间，不需要设置大面积的第一导热结构就能实现较好的散热效果。并且，对于第一导热结构采用金属材料的场景，在有效散热的基础上还避免了由于分布大面积金属材料的第一导热结构导致有源光器件调制速率的下降的情况，同时满足高集成度、高调制速率和高散热性能。
在一些可能的实施方式中，至少一个电极包括第一电极和第二电极，第一电极与第一外延结构电连接，第二电极与第二外延结构电连接。其中，第一电极和第二电极可以分别是P电极(正极)和N电极(负极)，从而使得外延层具有PN结功能。
在一些可能的实施方式中，光从有源层朝远离第一外延结构的第一方向发射。第一电极位于第一外延结构在第二方向上的一侧，第二电极位于第二外延结构在第二方向上的一侧，第一方向与第二方向相反。这里提供了一种有源光器件向下出光的具体实施方式，具有较好的实用性。
在一些可能的实施方式中，第一电极与第二电极在竖直方向上所处位置的高度不同，由于不需要将第一电极和第二电极设计为等高，整体工艺更简单。
在一些可能的实施方式中，第一电极与第二电极在竖直方向上所处位置的高度相同，将第一电极和第二电极设计为等高，便于后续采用倒装贴片的方式将第一电极和第二电极分别与驱动电路连接。
在一些可能的实施方式中，有源光器件还包括第三电极和第二导热结构，第二导热结构位于第二电极与第三电极之间，第三电极与第二外延结构电连接，第二电极通过第二导热结构与第三电极电连接。这里提供了一种利用第二导热结构抬高第二电极的实施方式，实现方式简单，且更有利于提升散热效果。
在一些可能的实施方式中，有源光器件还包括高度补偿层，高度补偿层位于第一导热结构远离所述凸起台面的一侧。作为一个示例，第二电极从与第二外延结构电连接的位置开始延伸到与第一电极等高的位置，则高度补偿层还位于第二电极的侧壁外侧。作为另一个示例，第二导热结构位于第二电极与第三电极之间，即通过第二导热结构将第二电极抬高到与第一电极等高的位置，则高度补偿层还位于第二导热结构的侧壁外侧。高度补偿层主要用于对第一电极和第二电极的部分位置形成支撑，有助于实现将第二电极抬高到与第一电极相同的高度。
在一些可能的实施方式中，第一导热结构与高度补偿层之间具有间隙，这样一来，可以有效避免由于第一导热结构与高度补偿的热膨胀系数不同而容易挤压开裂等问题。
在一些可能的实施方式中，有源光器件还包括第一分布式布拉格反射镜(Distributed Bragg Reflector，DBR)结构。光从有源层朝远离第一外延结构的第一方向发射，第一DBR结构位于凸起台面的顶部在第二方向上的一侧，第一方向与第二方向相反。考虑到要使得光朝竖直向下的方向发射，将第一DBR结构设置在凸起台面的上方，第一DBR结构对竖直向上发射的光进行反射，从而提高向下出光的效率。
在一些可能的实施方式中，有源光器件还包括第二DBR结构，第二DBR结构位于第二外延结构在第一方向上的一侧。第二DBR结构在该场景中可以对光起到增强透射的效果，从而进一步提高向下出光的效率。并且，第一DBR结构与第二DBR结构可以形成谐振结构，从而基于珀塞尔效应效应(Purcell Effect)提高有源光器件的性能。
在一些可能的实施方式中，第一DBR结构还包括通孔，位于第一DBR结构在第二方向上一侧的其中一个电极通过通孔与第一外延结构电连接，有利于保证第一电极和第二电极在第一DBR结构的顶部位置等高。
在一些可能的实施方式中，有源光器件还包括衬底，衬底位于第二外延结构远离有源层的一侧。
在一些可能的实施方式中，衬底包括透镜结构，从有源层发射的光经过透镜结构。应理解，利用透镜结构可以降低光的发散角，从而提高光的提取效率。
在一些可能的实施方式中，光从有源层朝远离第二外延结构的第二方向发射，在凸起台面顶部的第一外延结构的部分区域与第一电极电连接。第一电极不能完全覆盖凸起台面的顶部，从而保证来自有源层的光能朝竖直向上的方向发射。
在一些可能的实施方式中，第二电极位于第二外延结构在第二方向上的一侧，即第一电极和第二电极位于有源光器件的同侧，具有较好的可实现性。
在一些可能的实施方式中，有源光器件还包括第二DBR结构，第二DBR结构位于第二外延结构在第一方向上的一侧，第一方向与第二方向相反。第二DBR结构对竖直向下发射的光进行反射，从而提高向上出光的效率。
在一些可能的实施方式中，第二电极位于第二外延结构在第一方向上的一侧，第一方向与第二方向相反，即第一电极和第二电极分别位于有源光器件的上下两侧，扩展了本方案的实现方式。
在一些可能的实施方式中，有源光器件还包括采用导电材料的衬底，衬底位于第二外延结构在第一方向上的一侧，第二电极位于衬底在第一方向上的一侧，进一步扩展了本方案的实现方式。
在一些可能的实施方式中，第一导热结构包裹凸起台面的侧壁，相当于利用第一导热结构对有源层形成了包裹，更有利于提升散热效果。
在一些可能的实施方式中，第一导热结构采用金属材料，有源光器件还包括绝缘层，绝缘层位于第一导热结构与外延层之间。其中，利用金属材料的第一导热结构有利于提升散热效果。
在一些可能的实施方式中，第一导热结构采用绝缘材料，有利于简化工艺并降低成本。
在一些可能的实施方式中，有源光器件还包括电流扩展层和接触金属层，第一外延结构通过电流扩展层与第一电极电连接，第二外延结构通过接触金属层与第二电极电连接，丰富了本方案的实现方式。
第二方面，本申请实施例提供了一种有源光器件阵列，有源光器件阵列包括多个如第一方面任一实施方式介绍的有源光器件。
第三方面，本申请实施例提供了一种光发送装置，光发送装置包括驱动模块和如第一方面任一实施方式介绍的有源光器件，这里的有源光器件具体为光源，驱动模块用于驱动有源光器件发光。
第四方面，本申请实施例提供了一种光收发设备。光收发设备包括光接收装置和如第三方面介绍的光发送装置，光发送装置用于发射光，光接收装置用于接收光。
第五方面，本申请实施例提供了一种光显示装置，光显示装置包括成像模块和如第一方面任一实施方式介绍的有源光器件，这里的有源光器件具体为光源，成像模块用于根据有源光器件发射的光进行成像。
本申请实施例中，有源光器件包括外延层、第一导热结构和至少一个电极，外延层包括沿竖直方向分布的第一外延结构、有源层和第二外延结构，有源层位于第一外延结构与第二外延结构之间，有源层和第一外延结构形成凸起台面，第一导热结构位于凸起台面的侧壁外侧。考虑到有源层是通过注入电流发光，是核心的发热来源，本申请实施例在凸起台面侧壁靠近有源层的位置设置第一导热结构，合理利用了空间，不需要设置大面积的第一导热结构就能实现较好的散热效果。并且，对于第一导热结构采用金属材料的场景，在有效散热的基础上还避免了由于分布大面积金属材料的第一导热结构导致有源光器件调制速率的下降的情况，同时满足高集成度、高调制速率和高散热性能。
附图说明
图1为本申请实施例中一种光源的结构示意图；
图2为本申请实施例中另一种光源的结构示意图；
图3为本申请实施例中另一种光源的结构示意图；
图4为本申请实施例中另一种光源的结构示意图；
图5为本申请实施例中另一种光源的结构示意图；
图6为本申请实施例中另一种光源的结构示意图；
图7为本申请实施例中另一种光源的结构示意图；
图8为本申请实施例中另一种光源的结构示意图；
图9为本申请实施例中另一种光源的结构示意图；
图10为本申请实施例中另一种光源的结构示意图；
图11为本申请实施例中另一种光源的结构示意图；
图12为本申请实施例中一种光源阵列的结构示意图；
图13为本申请实施例中一种光发送装置的结构示意图；
图14为本申请实施例中一种光收发设备的结构示意图；
图15为本申请实施例中一种光显示装置的结构示意图。
具体实施方式
本申请实施例提供了一种有源光器件以及与有源光器件相关的装置，能实现有源光器件较好的散热效果，在有效散热的基础上还避免了有源光器件调制速率的下降，同时满足高集成度、高调制速率和高散热性能。应理解，本申请实施例提供的有源光器件包括但不限于光源、电光调制器和半导体光放大器(Semi-conductor Optical Amplifier，SOA)。应理解，由于光源对于散热性能的要求较高，因此下文主要以光源为例对本申请提供的有源光器件的结构进行介绍。光源具体可以是发光二极管(Light Emitting Diode，LED)或垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser，VCSEL)阵列等。
需要说明的是，本申请说明书和权利要求书及上述附图中的术语“第一”和“第二”等用于区别类似的对象，而非限定特定的顺序或先后次序。应理解，上述术语在适当情况下可以互换，以便在本申请描述的实施例能够以除了在本申请描述的内容以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
应当理解，如果元件或者层称为在另一元件或者层“上”，那么它可以直接在另一元件或者层上，或者也可以存在中间元件或者层。为了易于说明书描述图中所示的一个元件与另一元件的关系，在这里可以使用空间关系术语，例如“在…之下”、“在…下面”、“下”、“在…之上”、“位于…的上方”、“上”等。应当理解，空间关系术语意图包括除附图描述的方向之外应用或操作中的器件的不同取向。例如，如果翻转附图中的器件，描述为“在其他的元件或者特征下面”或者“在其他的元件或者特征之下”的元件将取向为“在其他的元件或者特征之上”。如此，术语例如“在…下面”可包括上面和下面两个取向。可以另外地定向该器件(旋转90度或者在其他的方向)，而在这里的空间描述符也被相应地理解。
本申请实施例提供的光源可以应用在各种需要光发射的场景中，例如，光信号传输和光成像显示等场景。下面对本申请实施例提供的光源进行详细介绍，其中，光源具有多层结构，为了便于展示光源的多层结构，本申请实施例都是以光源沿竖直方向的纵切面侧视图进行展示，基于光源的纵切面侧视图将多层结构分布的方向定义为竖直方向，将与竖直方向垂直的方向定义为水平方向，例如，光源中外延层的多层结构分布方向就是竖直方向。并且，本申请实施例都以光源正向放置来介绍光源中各层结构之间的上下关系，其中，光源中的多层结构是在衬底上制作的，衬底在下就是光源正向放置的场景。在一些可能的场景中，为了实现倒装贴片也可以将光源翻转过来放置，本领域技术人员也可以基于本申请实施例的介绍重新定义该场景中各层结构之间的上下关系。
图1为本申请实施例中一种光源的结构示意图。如图1所示，光源包括外延层1、第一电极21、第二电极22和第一导热结构31，外延层1包括在竖直方向上分布的第一外延结构11、有源层12和第二外延结构13。其中，有源层12位于第二外延结构13上方，第一外延结构11位于有源层12上方，第一外延结构11与第一电极21电连接，第二外延结构13与第二电极22电连接。其中，第一电极21和第二电极22可以分别是P电极(正极)和N电极(负极)，从而使得外延层1具有PN结功能。第一电极21和第二电极22可以都加载电流；或者，其中一个电极加载电流，另一个电极接地。以图1为例，第一电极21位于第一外延结构11的上方，第二电极22位于第二外延结构13的上方，当电流注入有源层12时可以从有源层12发光，在图1的示例中光朝竖直向下的方向发射，而朝竖直向上发射的光会被第一电极21阻挡。应理解，光源的多层结构是在衬底4上制作的，即外延层1位于衬底的上方。可选地，在光源最终形成的结构中可以保留衬底4，也可以剥离衬底4，具体以实际设计需要为准，此处不做限定。
应理解，本申请实施例对光源中各层结构之间的上下关系可以有等效的多种描述方式。例如，“第一电极21位于第一外延结构11的上方”，也可以描述为“第一电极21位于第一外延结构11在竖直向上方向上的一侧”，还可以描述为“第一外延结构11位于第一电极21在竖直向下方向上的一侧”。下文中为了描述简单，都以“…位于…上方”或“…位于…下方”的方式来描述，本领域技术人员也可以替换成上述示例中其他的描述方式。
需要说明的是，外延层1被刻蚀形成凸起台面，例如，基于外延层1从上向下进行刻蚀，刻蚀的深度要能达到第二外延结构13，且还要保留一部分没有被刻蚀的第二外延结构13，便于第二外延结构13与第二电极22电连接。也就是说，在光源沿水平方向的横切面上，没有被刻蚀的部分第二外延结构13的覆盖面积要大于被刻蚀之后第一外延结构11的覆盖面积和被刻蚀之后有源层12的覆盖面积，从而使得第一外延结构11和有源层12位于所形成的凸起台面部分。进而，第一导热结构31位于靠近凸起台面的侧壁的位置，从而尽可能靠近有源层12所在的位置。具体地，可以围绕凸起台面的侧壁形成一圈第一导热结构31，即凸起台面的侧壁一圈都被第一导热结构31包裹，或者也可以是凸起台面的侧壁部分被第一导热结构31包裹。第一导热结构31用于增强散热，降低器件结温，由于有源层12发光是核心的发热来源，通过这样设计合理利用了空间，不需要设置大面积的第一导热结构就能实现较好的散热效果。本申请不限定有源层12在竖直方向上的高度，通常情况下有源层12在竖直方向上的高度可以与凸起台面的顶部齐平，对部分第一电极21形成支撑。
应理解，第一导热结构31与外延层1之间是绝缘的，以避免第一外延结构11通过第一导热结构31与第二外延结构13电连接，相当于避免了第一电极21与第二电极22电连接而造成短路。在一种可能的实施方式中，如图1所示，第一导热结构31采用金属导热材料，例如具有高导热性能的银(Ag)，光源还包括绝缘层5，绝缘层5位于第一导热结构31与外延层1之间，实现了第一导热结构31与外延层1绝缘。具体地，可以在外延层1形成凸起台面之后，在外延层1的表面附着一层绝缘层5，并在绝缘层5上的对应位置开设通孔，使得第一外延结构11与第一电极21电连接，第二外延结构13与第二电极22电连接。相应的，第一导热结构31围绕在凸起台面侧壁所附着的绝缘层外侧。
图2为本申请实施例中另一种光源的结构示意图。如图2所示，在另一种可能的实施方式中，第一导热结构31采用绝缘材料，例如金刚石和碳化硅等。这样就不需要在外延层1的表面再附着绝缘层了，第一导热结构31可以直接贴合在凸起台面的侧壁上，有利于简化工艺并降低成本。
需要说明的是，本申请不限定第一电极21和第二电极22在竖直方向上是否等高。例如，在图1所示的结构中，第一电极21和第二电极22的顶部在竖直方向上所处位置的高度不同。又例如，在图2所示的结构中，第一电极21和第二电极22的顶部在竖直方向上所处位置的高度相同。应理解，将第一电极21和第二电极22在竖直方向上设计为等高，便于采用倒装贴片的方式将第一电极21和第二电极22分别与驱动电路连接，具有较好的实用效果。
图3为本申请实施例中另一种光源的结构示意图。如图3所示，还可以采用另一种区别于图2所示的方式实现第一电极21和第二电极22在竖直方向上等高。具体地，光源还包括第三电极23和第二导热结构32，第二导热结构32位于第三电极23的上方，第二电极22位于第二导热结构32的上方，从而使得第一电极21和第二电极22在竖直方向上所处位置的高度相同。其中，第二导热结构32采用金属导热材料，第二电极22通过第二导热结构32与第三电极23电连接。
可选地，如图3所示，光源还包括高度补偿层6，其中，高度补偿层6主要用于对第一电极21和第二电极22的部分位置形成支撑，有助于实现将第二电极22抬高到与第一电极21相同的高度，高度补偿层6位于第一导热结构远离凸起台面的一侧。作为一个示例，如图3所示，高度补偿层6可以填充在竖直方向上第一电极21所处高度与第二外延结构13所处高度之间除了凸起台面、第一导热结构和第二导热结构之外的空间。作为另一个示例，如果在图2所示的光源结构中增加高度补偿层6，高度补偿层6可以填充在竖直方向上第一电极21所处高度与第二外延结构13所处高度之间除了凸起台面、第一导热结构和第二电极之外的空间。应理解，通常可以将第一导热结构31、第二导热结构32和高度补偿层6设计为等高的。
图4为本申请实施例中另一种光源的结构示意图。如图4所示，在一些可能的场景中，第一导热结构31与高度补偿层6之间设置有间隙，第二导热结构33与高度补偿层6之间也设置有间隙。这样一来，可以有效避免由于第一导热结构31与高度补偿层6的热膨胀系数不同而容易挤压开裂等问题，同理也可以有效避免由于第二导热结构33与高度补偿层6的热膨胀系数不同而容易挤压开裂等问题。
图5为本申请实施例中另一种光源的结构示意图。如图5所示，可选地，光源还包括电流扩展层7和接触金属层8。第一外延结构11通过电流扩展层7与第一电极21电连接，第二外延结构13通过接触金属层8与第二电极22电连接。其中，电流扩展层7虽然具有导电特性，但不一定就是金属材料。接触金属层8用于形成良好的欧姆接触，在一种可能的场景中，部分接触金属层8可以环绕凸起台面形成一个环形结构。
图6为本申请实施例中另一种光源的结构示意图。如图6所示，在一种可能的场景中，基于衬底4制备了透镜结构41，衬底4采用了透光的材料，使得从有源层12发射的光能经过透镜结构41。应理解，利用透镜结构41可以降低光的发散角，从而提高光的提取效率。
图7为本申请实施例中另一种光源的结构示意图。如图7所示，在一种可能的场景中，光源还包括第一分布式布拉格反射镜(Distributed Bragg Reflector，DBR)结构7。考虑到要使得光朝竖直向下的方向发射，将第一DBR结构7设置在凸起台面的上方，第一DBR结构7对竖直向上发射的光进行反射，从而提高向下出光的效率。其中，在光源沿水平方向的横切面上，本申请不限定第一DBR结构7的具体覆盖面积，通常要保证第一DBR结构7至少能覆盖凸起台面的部分。应理解，在该场景中为了保证第一电极21和第二电极22在第一DBR结构7的顶部位置等高，可以在第一DBR结构7的对应位置设置通孔，使得第一电极21通过通孔与第一外延结构11电连接。同理，第二电极22通过通孔与金属材料的第二导热结构32电连接，进而再通过第三电极23与第二外延结构13电连接。还应理解，为了保证第一DBR结构7对进行反射的效果，第一电极21不会像上面几个实施例一样完全覆盖凸起台面的顶部，即凸起台面顶部的第一外延结构11的部分区域与第一电极21电连接。例如，与凸起台面顶部的第一外延结构11的部分区域电连接的第一电极21沿水平方向延伸至通孔所在的位置，再通过通孔延伸至第一DBR结构7的顶部位置，并在第一DBR结构7的顶部位置形成一定区域的覆盖，第一电极21的整体形状如图7所示类似“C”字型。应理解，本实施例中第一电极21也可以采用“T”字型等其他形状，具体此处不做限定。
图8为本申请实施例中另一种光源的结构示意图。如图8所示，在一种可能的场景中，基于图7所示的结构，光源还包括第二DBR结构8，第二DBR结构8位于第二外延结构13的下方。第二DBR结构8在该场景中可以对光起到增强透射的效果，从而进一步提高向下出光的效率。并且，第一DBR结构7与第二DBR结构8可以形成谐振结构，从而基于珀塞尔效应效应(Purcell Effect)提高光源的性能。
需要说明的是，图7和图8所示的实施例是在上述图3所示实施例的基础上增加第一DBR结构7和第二DBR结构8来实现。除此之外，也可以在图1、图2、图4或图5所示实施例的基础上增加第一DBR结构7和第二DBR结构8，具体此处不做限定。并且，上述的各实施例提供的光源都是以向下出光的场景为例进行介绍的，下面介绍几种光源向上出光的实施例。
图9为本申请实施例中另一种光源的结构示意图。如图9所示，第一电极21从凸起台面的顶部与第一外延结构11电连接，但第一电极21不能完全覆盖凸起台面的顶部，从而保证来自有源层12的光能朝竖直向上的方向发射，即凸起台面顶部的第一外延结构11的部分区域与第一电极21电连接。第二电极22位于第二外延结构13的上方。光源还包括第二DBR结构8，光源不包括衬底，第二DBR结构8位于第二外延结构13的下方。在该场景中，第二DBR结构8对竖直向下发射的光进行反射，从而提高向上出光的效率。
图10为本申请实施例中另一种光源的结构示意图。与图9所示的实施例类似，如图10所示，第一电极21从凸起台面的顶部与第一外延结构11电连接，但第一电极21不能完全覆盖凸起台面的顶部，从而保证来自有源层12的光能朝竖直向上的方向发射。区别于图9所示的实施例，如图10所示，光源不包括衬底，第二电极22位于第二外延结构13的下方。
图11为本申请实施例中另一种光源的结构示意图。与图9和图10所示的实施例类似，如图11所示，第一电极21从凸起台面的顶部与第一外延结构11电连接，但第一电极21不能完全覆盖凸起台面的顶部，从而保证来自有源层12的光能朝竖直向上的方向发射。区别于图9和图10所示的实施例，如图11所示，光源包括衬底4，第二电极22位于衬底4的下方。其中，衬底4采用导电材料，第二电极22通过衬底4与第二外延结构13电连接。
通过上面的介绍可以看出，考虑到有源层是通过注入电流发光，是核心的发热来源，本申请实施例在凸起台面侧壁靠近有源层的位置设置第一导热结构，合理利用了空间，不需要设置大面积的第一导热结构就能实现较好的散热效果，在有效散热的基础上还避免了光源调制速率的下降，同时满足高集成度、高调制速率和高散热性能。
图12为本申请实施例中一种光源阵列的结构示意图。如图12所示，多个光源排列形成光源阵列，其中，光源阵列中的光源可以采用上述图1至图11任一实施例所介绍的光源。应理解，光源阵列中的所有光源可以是统一控制的，或者也可以是独立控制每个光源，具体此处不做限定。
应理解，上述实施例介绍的光源和光源阵列可以应用在各种需要光发射的场景中，例如，光信号传输和光成像显示等场景，下面介绍几种典型的应用场景。
图13为本申请实施例中一种光发送装置的结构示意图。如图13所示，光发送装置包括光源阵列和驱动阵列。其中，光源阵列中的光源可以采用上述图1至图11任一实施例所介绍的光源。驱动阵列用于向光源中的电极输出电流，从而驱动光源发光。可选地，光发送装置还包括透镜阵列，透镜阵列用于对光源阵列发射的光进行光束整形。
图14为本申请实施例中一种光收发设备的结构示意图。如图14所示，光收发设备包括光发送装置和光接收装置，其中，光发送装置可以采用如图13所示的设计。光接收装置包括光电探测器(Photo Detector，PD)阵列和放大器阵列，光电探测器阵列将接收的光信号转换为电信号，并将电信号输出至放大器阵列。放大器阵列具体可以包括跨阻放大器(Trans-Impedance Amplifier，TIA)和限幅放大器(Limiting Amplifier，LA)。
图15为本申请实施例中一种光显示装置的结构示意图。如图15所示，光显示装置包括光源阵列和成像模块。其中，光源阵列中的光源可以采用上述图1至图11任一实施例所介绍的光源。成像模块用于根据光源发射的光进行成像。作为一个示例，光源阵列中的不同光源可以分别用于发射红光、蓝光和绿光，从而实现RGB显示。作为另一个示例，光源阵列中所有光源发射相同波长的光，通过成像模块对相同波长的光进行色转换，从而实现RGB显示。应理解，在一些可能的场景中，光显示装置除了具备显示功能外，还可能兼具通信功能，例如，两个光显示装置之间可以相互传输光信号，或者，利用光显示装置与其他通信设备进行光信号交互，这里不限定通信光的波长。
需要说明的是，以上实施例仅用以说明本申请的技术方案，而非对其限制。尽管参照前述实施例对本申请进行了详细说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (25)

  1. 一种有源光器件，其特征在于，所述有源光器件包括外延层、第一导热结构和至少一个电极，所述外延层与所述第一导热结构之间是绝缘的，所述外延层包括第一外延结构、有源层和第二外延结构，在所述外延层的结构分布方向上所述有源层位于所述第一外延结构与所述第二外延结构之间，其中一个电极与所述第一外延结构或所述第二外延结构电连接，所述有源层和所述第一外延结构形成凸起台面，所述第一导热结构位于所述凸起台面的侧壁外侧。
  2. 根据权利要求1所述的有源光器件，其特征在于，所述至少一个电极包括第一电极和第二电极，所述第一电极与所述第一外延结构电连接，所述第二电极与所述第二外延结构电连接。
  3. 根据权利要求2所述的有源光器件，其特征在于，光从所述有源层朝远离所述第一外延结构的第一方向发射，所述第一电极位于所述第一外延结构在第二方向上的一侧，所述第二电极位于所述第二外延结构在所述第二方向上的一侧，所述第一方向与所述第二方向相反。
  4. 根据权利要求3所述的有源光器件，其特征在于，在所述外延层的结构分布方向上，所述第一电极与所述第二电极所处位置的高度不同。
  5. 根据权利要求3所述的有源光器件，其特征在于，在所述外延层的结构分布方向上，所述第一电极与所述第二电极所处位置的高度相同。
  6. 根据权利要求5所述的有源光器件，其特征在于，所述有源光器件还包括第三电极和第二导热结构，所述第二导热结构位于所述第二电极与所述第三电极之间，所述第三电极与所述第二外延结构电连接，所述第二电极通过所述第二导热结构与所述第三电极电连接。
  7. 根据权利要求5所述的有源光器件，其特征在于，所述有源光器件还包括高度补偿层，所述高度补偿层位于所述第一导热结构远离所述凸起台面的一侧，且所述高度补偿层位于所述第二电极的侧壁外侧。
  8. 根据权利要求6所述的有源光器件，其特征在于，所述有源光器件还包括高度补偿层，所述高度补偿层位于所述第一导热结构远离所述凸起台面的一侧，且所述高度补偿层位于所述第二导热结构的侧壁外侧。
  9. 根据权利要求7或8所述的有源光器件，其特征在于，所述第一导热结构与所述高度补偿层之间具有间隙。
  10. 根据权利要求1至9中任一项所述的有源光器件，其特征在于，所述有源光器件还包括第一分布式布拉格反射镜DBR结构，光从所述有源层朝远离所述第一外延结构的第一方向发射，所述第一DBR结构位于所述凸起台面的顶部在第二方向上的一侧，所述第一方向与所述第二方向相反。
  11. 根据权利要求10所述的有源光器件，其特征在于，所述有源光器件还包括第二DBR结构，所述第二DBR结构位于所述第二外延结构在所述第一方向上的一侧。
  12. 根据权利要求10或11所述的有源光器件，其特征在于，所述第一DBR结构还包括通孔，位于所述第一DBR结构在所述第二方向上一侧的其中一个电极通过所述通孔与所述第一外延结构电连接。
  13. 根据权利要求1至12中任一项所述的有源光器件，其特征在于，所述有源光器件还包括衬底，所述衬底位于所述第二外延结构远离所述有源层的一侧。
  14. 根据权利要求13所述的有源光器件，其特征在于，所述衬底包括透镜结构，从所述有源层发射的光经过所述透镜结构。
  15. 根据权利要求2所述的有源光器件，其特征在于，光从所述有源层朝远离所述第二外延结构的第二方向发射，在所述凸起台面顶部的所述第一外延结构的部分区域与所述第一电极电连接。
  16. 根据权利要求15所述的有源光器件，其特征在于，所述第二电极位于所述第二外延结构在所述第二方向上的一侧。
  17. 根据权利要求15或16所述的有源光器件，其特征在于，所述有源光器件还包括第二DBR结构，所述第二DBR结构位于所述第二外延结构在第一方向上的一侧，所述第一方向与所述第二方向相反。
  18. 根据权利要求15所述的有源光器件，其特征在于，所述第二电极位于所述第二外延结构在第一方向上的一侧，所述第一方向与所述第二方向相反。
  19. 根据权利要求18所述的有源光器件，其特征在于，所述有源光器件还包括采用导电材料的衬底，所述衬底位于所述第二外延结构在所述第一方向上的一侧，所述第二电极位于所述衬底在所述第一方向上的一侧。
  20. 根据权利要求1至19中任一项所述的有源光器件，其特征在于，所述第一导热结构包裹所述凸起台面的侧壁。
  21. 根据权利要求1至20中任一项所述的有源光器件，其特征在于，所述第一导热结构采用金属材料，所述有源光器件还包括绝缘层，所述绝缘层位于所述第一导热结构与所述外延层之间。
  22. 根据权利要求1至20中任一项所述的有源光器件，其特征在于，所述第一导热结构采用绝缘材料。
  23. 根据权利要求2至22中任一项所述的有源光器件，其特征在于，所述有源光器件还包括电流扩展层和接触金属层，所述第一外延结构通过所述电流扩展层与所述第一电极电连接，所述第二外延结构通过所述接触金属层与所述第二电极电连接。
  24. 一种光发送装置，其特征在于，所述光发送装置包括驱动模块和如权利要求1至23中任一项所述的有源光器件，所述驱动模块用于驱动所述有源光器件发光。
  25. 一种光显示装置，其特征在于，所述光显示装置包括成像模块和如权利要求1至23中任一项所述的有源光器件，所述成像模块用于根据所述有源光器件发射的光进行成像。
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