WO2025190041A1 - 晶舟及炉管设备 - Google Patents

晶舟及炉管设备

Info

Publication number
WO2025190041A1
WO2025190041A1 PCT/CN2025/077756 CN2025077756W WO2025190041A1 WO 2025190041 A1 WO2025190041 A1 WO 2025190041A1 CN 2025077756 W CN2025077756 W CN 2025077756W WO 2025190041 A1 WO2025190041 A1 WO 2025190041A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer boat
substrate
layer
heater
air supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/077756
Other languages
English (en)
French (fr)
Inventor
陈宇
王晖
周冬成
刘满成
杨全柱
孙旭海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Acm Research Lingang Inc
ACM Research Shanghai Inc
Original Assignee
Acm Research Lingang Inc
ACM Research Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Research Lingang Inc, ACM Research Shanghai Inc filed Critical Acm Research Lingang Inc
Publication of WO2025190041A1 publication Critical patent/WO2025190041A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements

Definitions

  • the present application relates to the technical field of semiconductor equipment, and in particular to a wafer boat and furnace tube equipment.
  • the heating device 5000' of the furnace tube equipment is arranged on the periphery of the liner 2000', and heat is transferred from the periphery of the liner 2000' to the inside of the liner 2000'.
  • the temperature distribution on the substrate W inside the liner 2000' will be uneven, that is, the temperature of the outer circle area of the substrate W is higher than the temperature of the middle area of the substrate W.
  • the uneven temperature distribution on the substrate W will cause uneven film thickness of the substrate W.
  • the present invention provides a wafer boat and furnace tube equipment, in order to overcome the problem in the prior art that the temperature of the outer circle area of the substrate in the furnace tube equipment is higher than the temperature of the middle area of the substrate, resulting in uneven film thickness.
  • a wafer boat is used for carrying multiple layers of substrates spaced apart in a vertical direction in a furnace tube device, comprising:
  • the heater is configured to heat a middle region of the substrate when the wafer boat carries the substrate.
  • a wafer boat is used for carrying multiple layers of substrates spaced apart in a vertical direction in a furnace tube device, comprising:
  • Multiple layers of air supply components are spaced apart along the vertical direction and are respectively arranged above and/or below the corresponding substrates;
  • the gas supply pipeline is connected to the multi-layer gas supply component and is used to provide gas to the multi-layer gas supply component.
  • a furnace tube device comprises: a process tube and a wafer boat as described above, wherein the wafer boat is arranged inside the process tube, and the side wall of the process tube is provided with multiple layers of exhaust ports along the vertical direction of the process tube, and each layer of exhaust ports corresponds to at least one layer of the air supply component.
  • the central region of the substrate can be heated.
  • the wafer boat of the present invention can increase the temperature of the central region of the substrate, thereby improving the uniformity of the film thickness.
  • the gas supply is more uniform and sufficient, and the uniformity of the gas atmosphere of different substrates is better, which is conducive to improving the film formation uniformity within the substrate surface and between different substrates.
  • the furnace tube equipment provided by the present invention has a more uniform gas supply between different layers of substrates, and multiple layers of exhaust ports are provided in the process tube.
  • Each layer of exhaust ports corresponds to the gas supply components of the corresponding layer, and the exhaust is also more uniform, thereby improving the uniformity of the deposited film on each layer of substrate inside the process tube.
  • FIG1 is a schematic diagram of a first layout structure of heaters in a wafer boat according to Example 1 of the present invention
  • FIG2 is a schematic diagram of the installation structure of the heater in the wafer boat according to Example 1 of the present invention.
  • FIG. 3 is a schematic diagram of a second layout structure of heaters in a wafer boat according to Example 1 of the present invention.
  • FIG. 4 is a schematic diagram of a third layout structure of heaters in a wafer boat according to Embodiment 2 of the present invention.
  • FIG. 5A is a schematic diagram of a fourth layout structure of heaters in a wafer boat according to Embodiment 2 of the present invention.
  • 5B is a schematic diagram of a fifth layout structure of heaters in a wafer boat according to embodiment 2 of the present invention.
  • FIG. 6 is a schematic diagram of a sixth layout structure of heaters in a wafer boat according to Embodiment 2 of the present invention.
  • FIG. 7A is a schematic diagram of the heater layout structure in a wafer boat according to Example 3 of the present invention.
  • FIG. 7B is a schematic diagram of the heater layout structure in the wafer boat according to Example 4 of the present invention.
  • Example 8 is a schematic diagram of the layout structure of the air supply components in the wafer boat according to Example 5 of the present invention.
  • Example 9 is a schematic structural diagram of an air supply component in a wafer boat according to Example 5 of the present invention.
  • FIG. 10 is a schematic diagram of the layout structure of the heater and the air supply component of the wafer boat according to Example 6 of the present invention.
  • FIG. 11 is a schematic diagram of the layout structure of the heater and the air supply component of the wafer boat according to Example 7 of the present invention.
  • FIG12 is a schematic structural diagram of a furnace tube device according to Example 8 of the present invention.
  • FIG13 is a schematic structural diagram of the cross-sectional view of point B in FIG12 of the present invention.
  • FIG14 is a schematic structural diagram of a furnace tube device in the prior art.
  • this embodiment provides a wafer boat for carrying substrates W in a furnace tube apparatus.
  • the boat is capable of heating the central region of the substrate W in a non-contact manner, thereby balancing the temperature difference between the central region and the outer region of the substrate W.
  • the wafer boat includes a carrier body 100 and a heater 200.
  • the carrier body 100 includes multiple layers of carriers 110 for carrying substrates W.
  • the multiple layers of carriers 110 are spaced apart vertically along the carrier body 100, with each layer of carriers 110 carrying a single substrate W.
  • the heaters 200 are spaced apart vertically along the carrier body 100, and are disposed above and below the substrate W.
  • the heaters 200 are configured to heat the central region of the substrate W when the substrate W is carried on the carrier 110.
  • heaters 200 are provided above and below the carrier 110, with one heater 200 provided for every other layer of carrier 110, and the heaters 200 are arranged to correspond to the central region of the substrate W.
  • the heaters 200 can heat the central region of each layer of substrate W.
  • the heating device of the current furnace tube equipment is provided on the periphery of the furnace tube equipment, and heat is transferred from the periphery to the interior of the furnace tube equipment.
  • the temperature of the central region of the substrate W will be lower than the temperature of the outer region of the substrate, resulting in an uneven temperature distribution within the substrate W, which will lead to an uneven film thickness within the substrate W.
  • the wafer boat in this embodiment can increase the temperature of the central region of the substrate W, and the temperature of the heater can be adjusted by adjusting the output power of the heater 200, thereby balancing the temperature difference between the central region and the outer region of the substrate W, thereby improving the uniformity of the film thickness.
  • the heater 200 is heated by a heating plate, and the heating surface of the heater 200 corresponds to the middle area of the substrate W, mainly heating the middle area of the substrate W by convection.
  • heating wires may be used for heating.
  • the carrier body 100 includes a carrier 110 and a carrier column 120.
  • the carrier 110 is connected to the carrier column 120 to support the substrate W.
  • the heater 200 is connected to the carrier column 120 via a carrier plate 230.
  • the fixing method of the heater 200 is not limited to this, and the heater 200 can also be fixed to the carrier column 120 or to the carrier 110 by means of a connecting rod or the like.
  • the power supply circuit 240 of the heater 200 is fixed to the outer peripheral surface of the supporting column 120.
  • the power supply circuit 240 is made of high temperature resistant material.
  • a hollow supporting column may be used, and the power supply line 240 passes through the interior of the supporting column, making the layout of the line more compact.
  • heaters 200 are disposed above and below the substrates W. In other words, heaters 200 are disposed above and below each layer of substrates W. Each layer of substrates W is heated by two heaters 200 on its upper and lower surfaces, respectively. This allows more heat to be delivered to the center of the substrates W, resulting in a better heating effect.
  • the arrangement of the heaters 200 within the wafer boat is not limited to the arrangement shown in FIG1 , where heaters 200 are placed one substrate W apart.
  • This embodiment also provides an alternate arrangement.
  • a heater 200 positioned between two layers of substrates W can heat both layers simultaneously. Therefore, the heaters 200 can be placed with two layers of substrates W spaced apart, i.e., with two layers of carriers 110 spaced apart. This ensures that the center area of each layer of substrates W is heated while significantly reducing the number of heaters 200 and thus reducing costs.
  • a heater can be set every three or more substrate layers, and adjacent heaters jointly heat the middle area of the multi-layer substrate located between them.
  • the wafer boat also includes a rotating device and brushes.
  • a rotating device (not shown in the figure) is provided at the bottom of the wafer boat. The rotating device is used to drive the wafer boat to rotate.
  • the power supply line 240 of the heater 200 is connected to the power supply of the heater 200 through the brushes.
  • the wafer boat further includes a heat insulating sheet 300 , which is disposed at the bottom of the wafer boat to keep the wafer warm and reduce heat loss from the bottom of the wafer boat.
  • a film layer will be deposited on the heater 200 during use.
  • the heater 200 can be cleaned by periodically introducing a cleaning gas or by other cleaning methods.
  • This embodiment is essentially the same as the first embodiment, differing in that the heater 200 in this embodiment utilizes radiant heating, such as an infrared radiant heater.
  • Radiant heating has the following advantages: 1. High electrical heating efficiency; 2. Easier control of the heating range, enabling more precise heating of the central region of the substrate W; 3. Heat can penetrate the heated object, preventing intense heat exchange on the surface of the substrate W, thus preventing damage to the substrate W due to instantaneous overheating.
  • the layout of the heater 200 is related to the heating direction of the heater 200 .
  • the heater 200 heats the upper surface of the substrate W from top to bottom.
  • the heater 200 is disposed above the substrate W of the corresponding layer.
  • the heater 200 heats the lower surface of the substrate W from bottom to top.
  • the heater 200 is disposed below the substrate W of the corresponding layer.
  • the heater 200 can heat in two directions at the same time. Therefore, the heater 200 can be arranged with two layers of substrates W between them. The heater 200 located between two adjacent layers of substrates W can heat the two layers of substrates W at the same time, thereby reducing the number of heaters 200.
  • a partition 130 is provided at the lower portion of the substrate W to prevent impurities on the lower surface of the upper substrate W from falling onto the lower substrate W.
  • the heater 200 is interconnected with the carrier 110 along the horizontal direction A. Specifically, the heater 200 is disposed in the middle portion of the carrier 110, which secures the heater 200.
  • the carrier 110 is connected to the supporting columns 120.
  • the heater 200 is located in the middle portion of the carrier 110, corresponding to the middle region of the substrate W.
  • the heater 200 corresponds to the middle region of the substrate W, enabling precise heating of the middle region of the substrate W.
  • the upper surface of the heater 200 is at the same height as the upper surface of the carrier 110 .
  • the middle region of the substrate W contacts the upper surface of the heater 200 and is heated mainly by heat conduction.
  • the heater 200 may also be disposed above the substrate W in a contact manner.
  • the upper surface of the heater 200 may also be lower than the upper surface of the carrier 110.
  • the substrate W is placed on the carrier 110, and the middle area of the substrate W does not contact the heater 200.
  • the heater 200 mainly heats the middle area of the substrate W by convection or radiation.
  • the solution in this embodiment is substantially the same as that in Example 3, with the difference being that, as shown in FIG7B , the wafer boat in this embodiment does not include a support member.
  • the heater 200 is disposed below the central region of the substrate W in a contact manner, not only heating the central region of the substrate W but also supporting the substrate W.
  • the heater 200 is secured to the central portion of the wafer boat by a fixing member 210 , which is connected to the support column 120 and may be a connecting rod.
  • this embodiment provides a wafer boat that can provide a more uniform and sufficient gas supply.
  • the wafer boat includes a carrier body 100, a multi-layer gas supply component 400, and a gas supply pipeline.
  • the carrier body 100 includes multi-layer carriers 110 for supporting substrates W.
  • the multi-layer carriers 110 are spaced apart vertically along the carrier body 100.
  • the multi-layer gas supply components 400 are spaced apart vertically along the carrier body 100 and are positioned above corresponding layers of substrates W.
  • the gas supply pipeline is connected to the multi-layer gas supply components 400 to provide gas to each of the multi-layer gas supply components 400.
  • the gas supply assembly 400 By placing the gas supply assembly 400 above the corresponding layer of substrates W, the gas supply is more uniform and sufficient, and the gas atmosphere surrounding the different layers of substrates W is more uniform, thereby improving the uniformity of the film layers on the different layers of substrates.
  • the use of the wafer boat in this embodiment provides a more uniform gas distribution within the wafer boat, eliminating the need for a separate rotating device to rotate the wafer boat to improve gas distribution uniformity.
  • the layout of the gas supply component 400 is not limited thereto.
  • the lower surface of the substrate W may also be coated, so the gas supply component 400 may also be arranged below the corresponding layer of substrate W.
  • air supply components 400 may be provided above and below each layer of the substrate W.
  • the air supply pipeline includes a main pipeline 511 and multiple branch pipelines 512.
  • Each layer of the air supply component 400 is connected to the main pipeline 511 through a branch pipeline 512.
  • the main pipeline 511 can be arranged on the outer periphery of the supporting column 120 of the supporting body 100.
  • the supporting column 120 of the supporting body 100 may also be configured as a hollow structure, so the main line 511 may be disposed in the hollow structure of the supporting column 120.
  • the main line 511 may be eliminated, and the air supply may be performed using the hollow supporting column.
  • a regulating valve 520 is provided on the branch pipe 512 corresponding to each layer of the gas supply component 400.
  • the regulating valve 520 is used to adjust the gas flow rate of the branch pipe 512.
  • the regulating valve 520 can control the gas flow rate of each layer of the gas supply component 400, thereby balancing the differences in gas flow rates between different layers, thereby making the gas supply between different layers more uniform, which is conducive to improving the uniformity of thin film deposition on substrates W at different layers.
  • the gas supply component 400 corresponds to the middle area of the substrate in the horizontal direction A, and supplies gas toward the substrate W and toward the periphery along the horizontal direction A (ie, a direction parallel to the substrate).
  • the gas supply component 400 includes a hollow cavity 430, which is provided with an air inlet 440.
  • the air inlet 440 is connected to the gas supply pipeline (i.e., the branch pipeline 512).
  • a plurality of first gas supply holes 410 are arranged at intervals on the side of the hollow cavity 430 opposite to the substrate W, and a plurality of second gas supply holes 420 are arranged at intervals on the outer peripheral surface of the hollow cavity 430.
  • the first gas supply holes 410 can supply gas toward the substrate W.
  • the first gas supply holes 410 can supply gas perpendicular to the substrate W, or can supply gas at a certain inclination angle to the substrate W.
  • the second gas supply holes 420 supply gas to the periphery along the horizontal direction A.
  • only the first air supply hole 410 or only the second air supply hole 420 may be provided.
  • the air supply component 400 is not limited to the above-mentioned form, and may also directly supply air through an air inlet pipe or adopt other structures capable of supplying air.
  • the wafer boat also includes a plurality of heaters 200, which are spaced apart in the vertical direction of the carrier body 100 and are respectively arranged under the corresponding substrates W, and the heaters 200 are configured so that when the substrate W is carried on the carrier 110, the heaters 200 heat the middle area of the substrate W.
  • This embodiment provides a wafer boat having a structure substantially similar to that of the wafer boat in Example 6, differing in that it utilizes the structure and layout of the heater 200 in Example 3. Specifically, as shown in FIG11 , the wafer boat has multiple layers of air supply components 400 spaced apart vertically along the carrier body 100.
  • the layout of the heaters may also be adaptively modified as needed, and reference may be made to the layout of the heater 200 in the above embodiment.
  • this embodiment provides a furnace tube device, which includes: a process tube 2000 and a crystal boat in any of the above embodiments.
  • the crystal boat in Example 5 Taking the crystal boat in Example 5 as an example, the crystal boat 1000 is arranged inside the process tube 2000, and the supporting parts 110 are distributed at intervals along the vertical direction L of the process tube 2000.
  • the side wall of the process tube 2000 is provided with multiple layers of exhaust ports 2100 along the vertical direction L, and each layer of exhaust ports 2100 corresponds to a layer of air supply components 400.
  • the configuration of multiple layers of gas supply components 400 in the wafer boat can make the gas supply between different layers of substrates W more uniform, and multiple layers of exhaust ports 2100 are set in the process tube 2000.
  • Each layer of exhaust ports 2100 corresponds to the gas supply components 400 of the corresponding layer, and the exhaust is also more uniform, thereby improving the uniformity of the deposited film on each layer of substrate W inside the process tube 2000.
  • each layer of exhaust ports 2100 on the process tube 2000 may also correspond to multiple layers of gas supply components 400 , thereby reducing the number of layers of exhaust ports 2100 .
  • each layer of exhaust ports 2100 includes a plurality of circumferentially spaced openings 2110.
  • the air supply component 400 is also circumferentially spaced apart with a plurality of second air supply holes 420.
  • the plurality of second air supply holes 420 located on the same layer correspond to the plurality of openings 2110.
  • the openings 2110 may also be staggered with the second air supply holes 420 on the same layer.
  • the furnace tube equipment further includes:
  • the liner pipe 3000 is sleeved on the outside of the process pipe 2000.
  • the heating assembly 5000 is arranged on the outside of the liner tube 3000 and is used to heat the liner tube 3000.
  • the furnace tube equipment further includes an air pump 4000.
  • the liner tube 3000 is provided with an air extraction port, and the air pump 4000 is arranged at the air extraction port.
  • the air pump 4000 can extract excess gas.
  • the liner 3000 is provided with a plurality of spaced apart exhaust ports along the circumference, and an air pump 4000 is provided at each exhaust port, which is beneficial to improving the exhaust efficiency and the uniformity of gas distribution.
  • a film layer will be deposited on the gas supply component 400 during use.
  • Cleaning gas can be introduced into the gas supply component 400 regularly to clean it, or other cleaning methods can be used to clean it.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

本发明公开了一种晶舟及炉管设备，晶舟用于在炉管设备中承载沿竖直方向间隔分布的多层基板，其包括：多个加热器，沿所述竖直方向间隔分布；所述加热器被配置为：当所述晶舟承载所述基板时，所述加热器对所述基板的中部区域进行加热。通过本发明的晶舟能够提高基板中部区域的温度，从而能够提高成膜厚度的均一性。

Description

晶舟及炉管设备 技术领域
本申请涉及半导体设备技术领域，具体涉及一种晶舟及炉管设备。
背景技术
如图14所示，炉管设备的加热装置5000'设置在衬管2000'的外周，热量由衬管2000'外周向衬管2000'内部传递，在中低温的工艺条件下，由于传递过程中的热量损失，会导致衬管2000'内部的基板W上温度分布不均一，也即基板W的外圈区域的温度高于基板W的中部区域的温度，而温度在基板W上分布不均一，会导致基板W成膜厚度不均匀。
发明内容
本发明提供一种晶舟及炉管设备，为了克服现有技术中炉管设备中基板外圈区域的温度高于基板中部区域的温度，导致成膜厚度不均匀的问题。
本发明是通过下述技术方案来解决上述技术问题：
一种晶舟，用于在炉管设备中承载沿竖直方向间隔分布的多层基板，其包括：
多个加热器，沿所述竖直方向间隔分布；
所述加热器被配置为：当所述晶舟承载所述基板时，所述加热器对所述基板的中部区域进行加热。
一种晶舟，用于在炉管设备中承载沿竖直方向间隔分布的多层基板，其包括：
多层供气部件，沿所述竖直方向间隔分布，并且分别设置于对应的基板的上方和/或下方；
供气管路，与所述多层供气部件连通，用于向所述多层供气部件提供气体。
一种炉管设备，其包括：工艺管和如上所述的晶舟，所述晶舟设置于所述工艺管的内部，所述工艺管的侧壁沿工艺管的竖直方向上设置有多层排气口，每一层排气口对应至少一层所述供气部件。
本发明的积极进步效果在于：
1、通过设置多个加热器，能够对基板的中部区域进行加热。通过本发明中的晶舟能够提高基板中部区域的温度，从而能够提高成膜厚度的均一性。
2、通过在每层基板的上方和/或下方设置供气部件，供气更为均匀充分，不同基板所处的气体氛围的均匀性更好，有利于提高基板面内以及不同基板间的成膜均匀性。
3、本发明提供的炉管设备，不同层基板之间的供气更为均匀，并且工艺管内设置了多层排气口，每层排气口均对应相应层的供气部件，排气也更为均匀，进而能够提高工艺管内部每层基板上沉积薄膜的均匀性。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。
图1为本发明实施例1的晶舟中的加热器第一布局结构示意图；
图2为本发明实施例1的晶舟中的加热器的安装结构示意图；
图3为本发明实施例1的晶舟中的加热器第二布局结构示意图；
图4为本发明实施例2的晶舟中的加热器第三布局结构示意图；
图5A为本发明实施例2的晶舟中的加热器第四布局结构示意图；
图5B为本发明实施例2的晶舟中的加热器第五布局结构示意图；
图6为本发明实施例2的晶舟中的加热器第六布局结构示意图；
图7A为本发明实施例3的晶舟中的加热器布局结构示意图；
图7B为本发明实施例4的晶舟中的加热器布局结构示意图；
图8为本发明实施例5的晶舟中的供气部件布局结构示意图；
图9为本发明实施例5的晶舟中的供气部件的结构示意图；
图10为本发明实施例6的晶舟的加热器和供气部件的布局结构示意图；
图11为本发明实施例7的晶舟的加热器和供气部件的布局结构示意图；
图12为本发明实施例8的炉管设备结构示意图；
图13为本发明图12的B处剖面视角的结构示意图；
以及
图14为现有技术中炉管设备的结构示意图。
本申请的较佳实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在的实施例范围之中。
实施例1
如图1所示，本实施例提供了一种晶舟，用于在炉管设备中承载基板W，能够对基板W的中部区域以非接触的方式进行加热，从而能够平衡基板W的中部区域和基板W的外圈区域的温差。晶舟包括承载主体100和加热器200。承载主体100包括用于承载基板W的多层承载件110，且多层承载件110沿承载主体100的竖直方向间隔分布，每层承载件110承载一片基板W。加热器200沿承载主体100的竖直方向间隔分布，加热器200设置于基板W的上方和下方，并且，加热器200被配置为：当承载件110上承载基板W时，加热器200对基板W的中部区域进行加热。
在图1所示示例中，通过在承载件110的上方和下方设置加热器200，每隔一层承载件110设置一个加热器200，并使加热器200对应基板W的中部区域，加热器200能够对每一层基板W的中部区域进行加热。目前的炉管设备的加热装置设置于炉管设备的外围，热量由炉管设备的外围向内部传递，在成膜工艺，尤其在中低温(500℃以下)的成膜工艺中，会引起基板W的中部区域的温度低于基板的外圈区域的温度，使得基板W片内的温度分布不均匀，从而会导致基板W片内的成膜厚度不均匀。通过本实施例中的晶舟能够提高基板W中部区域的温度，通过调节加热器200的输出功率能够调节加热器的温度，进而平衡基板W的中部区域和外圈区域的温度差，从而能够提高成膜厚度的均一性。
在本实施例中，加热器200采用加热片加热，加热器200的加热面对应于基板W的中部区域，主要以对流的方式对基板W的中部区域加热。此外，也可以采用电热丝的方式进行加热。
如图1和图2，承载主体100包括承载件110和承载柱120，承载件110与承载柱120连接，用于承载基板W。加热器200通过承载盘230与承载柱120连接。在其他实施例中，加热器200的固定方式不局限于此，也可以通过连接杆等方式固定在承载柱120上或者固定在承载件110上。
在本实施例中，加热器200的供电线路240固定于承载柱120的外周面。较佳地，供电线路240采用耐高温材料。
在其他实施例中，也可以采用中空的承载柱，供电线路240从承载柱的内部穿过，线路的布局更为紧凑。
图1中，加热器200设置于基板W的上方和下方，也即每一层基板W的上方和下方均设置有加热器200。每层基板W均对应两个加热器200对其上表面和下表面分别进行加热，能够向基板W的中部区域提高更多的热量，加热效果更好。
关于加热器200在晶舟内的布置方式不局限于图1中加热器200间隔一层基板W的布局方式，本实施例还提供了一种间隔的布局方式。如图3所示，位于两层基板W中间的加热器200可以同时加热该两层基板W，因此，加热器200可以间隔两层基板W布置，即间隔两层承载件110布置，在确保每层基板W的中部区域都能够被加热的同时，极大地节省了加热器200的数量，有利于降低成本。
需要说明的是，图1和图3所示示例不用于限制相邻加热器之间间隔的基板层数，例如，在一些实施方式中，也可以每隔三层或三层以上基板设置一个加热器，相邻加热器共同为位于两者之间的多层基板的中部区域进行加热。
在本实施例中，晶舟还包括旋转装置和电刷，晶舟的底部设置有旋转装置(图中未示出)，旋转装置用于驱动晶舟旋转，加热器200的供电线路240通过电刷与加热器200的电源连接。
在本实施例中，晶舟还包括隔热片300，设置于晶舟的最底端，起到保温的作用，减少热量从晶舟的底部流失。
在本实施例中，加热器200在使用过程中会沉积有膜层，可以定期通入清洗气体对加热器200进行清洗，也可以通过其他清洗方式进行清洗。
实施例2
本实施例与实施例1的方案基本相同，其不同之处在于，本实施例中的加热器200采用辐射式加热，如红外辐射加热器。辐射式加热具有以下优点：1、电热效率高；2、更容易控制加热范围，进而能够较为精准地对基板W的中部区域进行加热；3、热量能够透入被加热物体，不会在基板W的表面发生强烈的热交换，能够避免基板W表面因瞬间过热而被破坏。
关于加热器200的布局方式与加热器200的加热方向相关。
如图4所示，加热器200以从上向下的方式对基板W的上表面进行加热。加热器200设置于对应层基板W的上方。
如图5A所示，加热器200以从下向上的方式对基板W的下表面进行加热。加热器200设置于对应层基板W的下方。
如图6所示，加热器200能够同时向两个方向进行加热。因此可以将加热器200间隔两层基板W布置，位于相邻两层基板W中间的加热器200可以同时加热该两层基板W，从而减少加热器200的数量。
其中，如图5B所示，当加热器200对基片W的下表面进行加热时，为了防止上层基片W的下表面的杂质掉落到下层基片W上，还在此基片W的下部设置了隔板130。
实施例3
本实施例中的方案与实施例1中的方案基本相同，其不同之处在于，如图7A所示，在本实施例中，加热器200沿水平方向A与承载件110相互连接，具体地，加热器200设置于承载件110的中间部位，承载件110对加热器200起到固定的作用，承载件110与承载柱120连接，当承载件110承载基板W时，加热器200位于承载件110的中间部位，能够对应基板W的中部区域。当基板W放置于承载件110上，加热器200与基板W的中部区域对应，能够精准对基板W的中部区域进行加热。
在本实施例中，加热器200的上表面高度与承载件110的上表面高度相同，基板W的中部区域与加热器200的上表面接触，主要以热传导的方式进行加热。
在一些实施例中，如需对基板W的下表面沉积薄膜，加热器200也可以接触的方式设置于基板W的上方。
在其他实施例中，加热器200的上表面也可以低于承载件110的上表面，基板W放置于承载件110上，基板W的中部区域不与加热器200接触，加热器200主要通过对流或者辐射的方式对基板W的中部区域加热。
实施例4
本实施例中的方案与实施例3中的方案基本相同，其不同之处在于：如图7B所示，本实施例中的晶舟不包括承载件，加热器200通过接触的方式设置在基板W的中部区域下方，不仅对基板W的中部区域进行加热，还对基板W起到承载的作用。在本示例中，加热器200通过固定件210固定在晶舟的中部，固定件210与承载柱120连接，固定件210可以为连接杆。
实施例5
如图8和图9所示，本实施例提供了一种晶舟，能够使气体的供应更为均匀充分，其包括：承载主体100、多层供气部件400和供气管路。承载主体100包括用于承载基板W的多层承载件110，多层承载件110沿承载主体100的竖直方向间隔分布。多层供气部件400沿承载主体100的竖直方向间隔分布，并且设置于对应层基板W的上方。供气管路与多层供气部件400连通，用于向多层供气部件400分别提供气体。
通过在对应层基板W的上方设置供气部件400，供气更为均匀充分，不同层基板W所处的气体氛围的均匀性更好，进而有利于提高不同层基板上的膜层均匀性。采用了本实施例中的晶舟，晶舟内的气体分布更为均匀，因此无需额外设置旋转装置对晶舟旋转，来提升气体分布的均匀性。
在其他实施例中，供气部件400的布局不局限于此，在一些工艺中，基板W的下表面也会进行镀膜，因此供气部件400也可以设置在对应层基板W的下方。
在一些实施例中，为了保证基板上下膜层都具备良好的均匀性，也可以在每层基板W的上方和下方均设置供气部件400。
在本实施例中，供气管路包括主管路511和多个分支管路512，每层供气部件400通过一个分支管路512与主管路511连接。主管路511可以设置于承载主体100的承载柱120外周。
在一些实施例中，承载主体100的承载柱120也可以设置为中空结构，因此可以将主管路511设置于承载柱120的中空结构内。此外，还可以取消主管路511，借助中空的承载柱进行供气。
每层供气部件400对应的分支管路512上配置有调节阀520，调节阀520用于调节该分支管路512的供气流量。通过调节阀520可以控制每层供气部件400的供气流量，进而能够平衡不同层之间的供气流量的差异，从而使得不同层之间的供气量更为均匀，有利于提高不同层之间的基板W的薄膜沉积的均匀性。
在本实施例中，供气部件400在水平方向A上对应基板的中部区域，并朝向基板W供气和沿所述水平方向A(即平行于基板的方向)向外围供气。
具体地，如图8和图9所示，供气部件400包括一中空腔体430，中空腔体430设置有一进气口440，进气口440与供气管路(也即分支管路512)连接，中空腔体430与基板W相对的一面间隔设置有多个第一供气孔410，并且中空腔体430的外周面间隔设置有多个第二供气孔420。第一供气孔410能够朝向基板W进行供气。第一供气孔410可以垂直于基板W进行供气，也可以与基板W呈一定倾斜角度进行供气。第二供气孔420沿所述水平方向A向外围供气。通过设置第一供气孔410和第二供气孔420，有利于提升供气部件400的供气扩散效果，使得工艺气体在基板的各个区域分布更为均匀，有利于提高基板的片内均匀性。
在其他实施例中，也可以仅设置第一供气孔410或者仅设置第二供气孔420。
在一些实施例中，供气部件400不局限于上述形式，也可以直接通过进气管进行供气或者采用其他能够供气的结构。
实施例6
本实施例与实施例5中的方案基本相同，其不同之处在于，在本实施例中，如图10所示，晶舟还包括多个加热器200，沿承载主体100的竖直方向间隔分布，分别设置于对应的基板W的下方，并且，加热器200被配置为：当承载件110上承载基板W时，加热器200对基板W的中部区域进行加热。
实施例7
本实施例提供了一种晶舟，其与实施例6中的晶舟结构基本相同，其不同之处在于，其采用了实施例3中的加热器200的结构及布局。具体地，如图11所示，晶舟的多层供气部件400，沿承载主体100的竖直方向间隔分布。
在一些实施例中，加热器的布局也可以根据需要做适应性修改，可参考上述实施例中加热器200的布局。
实施例8
如图12和图13所示，本实施例提供了一种炉管设备，其包括：工艺管2000和上述任一实施例中的晶舟，以实施例5中的晶舟为例，晶舟1000设置于工艺管2000的内部，承载件110沿工艺管2000的竖直方向L间隔分布，工艺管2000的侧壁沿竖直方向L上设置有多层排气口2100，每一层排气口2100对应一层供气部件400。
晶舟中配置多层供气部件400能够使不同层基板W之间的供气更为均匀，并且工艺管2000内设置了多层排气口2100，每层排气口2100均对应相应层的供气部件400，排气也更为均匀，进而能够提高工艺管2000内部每层基板W上沉积薄膜的均匀性。
在其他实施例中，工艺管2000上的每层排气口2100也可以对应多层供气部件400，进而可以减少排气口2100的层数。
如图13所示，在本实施例中，每一层排气口2100包括周向间隔设置的多个开孔2110。供气部件400的周向间隔设置有多个第二供气孔420，位于同一层的多个第二供气孔420与多个开孔2110相对应。在一些实施例中，在同一层的周向上，开孔2110也可以与第二供气孔420交错设置。
在本实施例中，炉管设备还包括：
衬管3000，套设于工艺管2000的外侧。
加热组件5000，设置于衬管3000外侧，用于对衬管3000加热。
进一步地，炉管设备还包括气泵4000，衬管3000设置有抽气口，气泵4000设置于抽气口处。通过气泵4000能够将过剩的气体抽走。
在其他实施例中，衬管3000沿周向设置有多个间隔的抽气口，每个抽气口处设置有气泵4000，有利于提高排气效率和气体分布的均匀性。
在本实施例中，供气部件400在使用过程中会沉积有膜层，可以定期通入清洗气体对供气部件400进行清洗，也可以通过其他清洗方式进行清洗。
虽然以上描述了本发明的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本发明的保护范围。此外，本申请的一个或多个实施例中的某些特征、结构或特点可以进行适当的组合。

Claims (19)

  1. 一种晶舟，用于在炉管设备中承载沿竖直方向间隔分布的多层基板，其特征在于，包括：
    多个加热器，沿所述竖直方向间隔分布；
    所述加热器被配置为：当所述晶舟承载所述基板时，所述加热器对所述基板的中部区域进行加热。
  2. 如权利要求1所述的晶舟，其特征在于，所述加热器与所述基板的中部区域相对设置，且所述加热器以接触或非接触的方式配置在与其相邻的基板上方或下方。
  3. 如权利要求1所述的晶舟，其特征在于，每隔至少一层所述基板设置一个所述加热器。
  4. 如权利要求1所述的晶舟，其特征在于，还包括承载主体，所述承载主体包括用于承载所述多层基板的多层承载件，所述多层承载件沿所述承载主体的竖直方向间隔分布。
  5. 如权利要求1所述的晶舟，其特征在于，所述加热器采用辐射式加热。
  6. 如权利要求1所述的晶舟，其特征在于，还包括旋转装置和电刷，所述旋转装置设置在所述晶舟的底部，所述旋转装置用于驱动所述晶舟旋转，所述加热器的供电线路通过所述电刷与所述加热器的电源连接。
  7. 一种炉管设备，其特征在于，其包括如权利要求1-6任意一项所述的晶舟。
  8. 一种晶舟，用于在炉管设备中承载沿竖直方向间隔分布的多层基板，其特征在于，其包括：
    多层供气部件，沿所述竖直方向间隔分布，并且分别设置于对应的所述基板的上方和/或下方；
    供气管路，与所述多层供气部件连通，用于向所述多层供气部件提供气体。
  9. 如权利要求8所述的晶舟，其特征在于，所述供气部件对应基板的中部区域。
  10. 如权利要求8或9所述的晶舟，其特征在于，所述供气部件朝向所述基板供气，和/或，所述供气部件沿平行于所述基板的方向向外围供气。
  11. 如权利要求10所述的晶舟，其特征在于，所述供气部件包括一中空腔体，所述中空腔体设置有一进气口，所述进气口与所述供气管路连接，所述中空腔体与所述基板相对的一面间隔设置有多个第一供气孔，和/或，所述中空腔体的外周面间隔设置有多个第二供气孔。
  12. 如权利要求8所述的晶舟，其特征在于，每层所述供气部件与所述供气管路之间配置有调节阀，所述调节阀用于调节对应的供气部件的供气流量。
  13. 如权利要求8所述的晶舟，其特征在于，还包括：
    多个加热器，沿所述竖直方向间隔分布，所述加热器被配置为：当所述晶舟承载所述基板时，所述加热器对所述基板的中部区域进行加热。
  14. 如权利要求13所述的晶舟，其特征在于，所述加热器与所述基板的中部区域相对设置，且所述加热器以接触或非接触的方式配置在与其相邻的基板上方或下方。
  15. 一种炉管设备，其特征在于，其包括：工艺管和如权利要求8-14任意一项所述的晶舟，所述晶舟设置于所述工艺管的内部，所述工艺管的侧壁沿工艺管的竖直方向上设置有多层排气口，每一层排气口对应至少一层所述供气部件。
  16. 如权利要求15所述的炉管设备，其特征在于，每一层排气口包括周向间隔设置的多个开孔。
  17. 如权利要求16所述的炉管设备，其特征在于，所述多层供气部件与所述多层排气口一一对应，每层所述供气部件的周向间隔设置有多个第二供气孔，对应层的所述多个第二供气孔与所述多个开孔相对应。
  18. 如权利要求15所述的炉管设备，其特征在于，还包括：
    衬管，套设于所述工艺管的外侧；
    加热组件，设置于所述衬管的外侧，用于对所述衬管加热。
  19. 如权利要求18所述的炉管设备，其特征在于，所述衬管沿周向设置有多个间隔的抽气口，每个抽气口处设置有气泵。
PCT/CN2025/077756 2024-03-14 2025-02-18 晶舟及炉管设备 Pending WO2025190041A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319695A (ja) * 2003-04-15 2004-11-11 Hitachi Kokusai Electric Inc 基板処理装置
KR20110131560A (ko) * 2010-05-31 2011-12-07 주식회사 테라세미콘 기판 처리용 보트
KR20170132435A (ko) * 2016-05-24 2017-12-04 삼성전자주식회사 기판 가열 방법
CN109023309A (zh) * 2018-08-14 2018-12-18 德淮半导体有限公司 薄膜沉积方法及炉管装置
CN208923050U (zh) * 2018-11-29 2019-05-31 德淮半导体有限公司 具有局部加热功能的炉管
CN116516316A (zh) * 2022-01-24 2023-08-01 盛美半导体设备(上海)股份有限公司 用于薄膜沉积的炉管、薄膜沉积方法及加工设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319695A (ja) * 2003-04-15 2004-11-11 Hitachi Kokusai Electric Inc 基板処理装置
KR20110131560A (ko) * 2010-05-31 2011-12-07 주식회사 테라세미콘 기판 처리용 보트
KR20170132435A (ko) * 2016-05-24 2017-12-04 삼성전자주식회사 기판 가열 방법
CN109023309A (zh) * 2018-08-14 2018-12-18 德淮半导体有限公司 薄膜沉积方法及炉管装置
CN208923050U (zh) * 2018-11-29 2019-05-31 德淮半导体有限公司 具有局部加热功能的炉管
CN116516316A (zh) * 2022-01-24 2023-08-01 盛美半导体设备(上海)股份有限公司 用于薄膜沉积的炉管、薄膜沉积方法及加工设备

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