WO2025148643A1 - 电镀装置及基板清洁方法 - Google Patents

电镀装置及基板清洁方法

Info

Publication number
WO2025148643A1
WO2025148643A1 PCT/CN2024/140246 CN2024140246W WO2025148643A1 WO 2025148643 A1 WO2025148643 A1 WO 2025148643A1 CN 2024140246 W CN2024140246 W CN 2024140246W WO 2025148643 A1 WO2025148643 A1 WO 2025148643A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
nozzle
cleaning liquid
rotation speed
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/140246
Other languages
English (en)
French (fr)
Inventor
王晖
王冠军
汪若飞
王先星
杨宏超
贾照伟
陆陈华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2025148643A1 publication Critical patent/WO2025148643A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors

Definitions

  • an electroplating device comprising:
  • a driving device used for driving the chuck to rotate
  • the coverage range of the nozzle spraying cleaning liquid onto the substrate includes: a forward rotation speed area and a reverse rotation speed area, the forward rotation speed area is larger than the reverse rotation speed area; the forward rotation speed area is an area where the cleaning liquid sprayed from the nozzle has a velocity component in the direction of the substrate rotation speed; the reverse rotation speed area is an area where the cleaning liquid sprayed from the nozzle has a velocity component in the direction opposite to the substrate rotation speed.
  • the nozzle is a fan-shaped nozzle, a circular nozzle, an annular nozzle or a cylindrical nozzle.
  • the coverage range of the cleaning liquid sprayed by the nozzle includes the center of the substrate held by the chuck.
  • the distance between the boundary of the cleaning liquid in the forward rotation speed area and the center of the substrate is greater than or equal to r/2, where r is the distance between the center of the substrate and the edge of the substrate.
  • the driving device drives the chuck to rotate at a speed greater than or equal to 50 r/min.
  • the flow rate of the cleaning liquid sprayed from the nozzle is 0.5-2.5 LPM.
  • the present invention provides a substrate cleaning method, comprising:
  • FIG1 shows a schematic structural diagram of an electroplating device in an embodiment of the present invention
  • FIG2 is a schematic diagram showing the division of the water drop area in the cathode chamber during the substrate cleaning process according to an embodiment of the present invention
  • FIG3 shows the water drop results of each area in FIG2 when the central axis of the cleaning liquid sprayed from the nozzle in the embodiment of the present invention passes through the center of the substrate;
  • FIG5 is a schematic diagram showing the flow rate of the cleaning liquid in an embodiment of the present invention.
  • FIG. 8 shows the water drop results of each area in FIG. 2 when the central axis of the cleaning liquid sprayed from the nozzle in the embodiment of the present invention does not pass through the center of the substrate.
  • Figure 1 shows a schematic diagram of the electroplating device structure in an embodiment of the present invention.
  • the electroplating device includes an electroplating chamber 100, and the electroplating chamber 100 is divided into two independent chambers by a horizontally arranged ion membrane 200, one side of the ion membrane 200 is an anode chamber 300, and the other side of the ion membrane 200 is a cathode chamber 400, and an anode 500 is arranged inside the anode chamber 300;
  • the top of the cathode chamber 400 is provided with a water shield 600 and a chuck 700 for keeping the substrate horizontally arranged, and a driving device 800 for driving the chuck 700 to rotate
  • the driving device 800 can also be configured to drive the chuck 700 to move in the vertical direction, so as to drive the chuck to enter or move out of the cathode chamber 400 and keep the chuck 700 at a target height.
  • the electroplating device is also provided with a nozzle 900 for cleaning the substrate.
  • the nozzle 900 includes but is not limited to: a fan-shaped nozzle, a circular nozzle, an annular nozzle or a cylindrical nozzle.
  • the nozzle 900 can be set according to the actual machine situation. In the present embodiment, the nozzle 900 is fixedly arranged on the water shield 600.
  • the driving device 800 drives the chuck 700 to keep the substrate 001 moving upward, remove the electroplating solution, until it moves into the water shield 600, and then the driving device 800 drives the chuck 700 to rotate to clean the substrate 001.
  • part of the cleaning liquid will fall into the cathode chamber 400 along the path of S2, affecting the stability of the electroplating solution.
  • the present application proposes a solution.
  • the coverage of the nozzle 900 spraying the cleaning liquid to the substrate 001 includes: a forward rotation speed area 901 and a reverse rotation speed area 902, wherein the forward rotation speed area 901 is larger than the reverse rotation speed area 902.
  • the range covered by the cleaning liquid is divided into two regions according to the flow velocity direction of the cleaning liquid.
  • One region is the region where the cleaning liquid sprayed by the nozzle 900 has a velocity component along the direction of the substrate rotation speed, which is called the forward rotation speed region 901; the other region is the region where the cleaning liquid sprayed by the nozzle 900 has a velocity component against the direction of the substrate rotation speed, which is called the reverse rotation speed region 902.
  • the vicinity of the coverage range of the cleaning liquid in the forward rotation speed region 901 is also considered to be the forward rotation speed region; the vicinity of the coverage range of the cleaning liquid in the reverse rotation speed region 902 is also considered to be the reverse rotation speed region.
  • the forward rotation speed region 901 is required to be larger than the reverse rotation speed region 902 to reduce the amount of water falling when cleaning the substrate 001.
  • the cleaning liquid can be deionized water.
  • the present application divides the coverage area of the cleaning liquid sprayed from the nozzle into regions according to the rotation direction of the substrate and the flow velocity direction of the cleaning liquid, and sets the position of the nozzle in a targeted manner, so that when cleaning the substrate, the cleaning liquid sprayed from the nozzle falls more in the forward rotation area, so that it can be better thrown into the water shield and then discharged, thereby effectively reducing the amount of water falling when cleaning the substrate, preventing a large amount of cleaning liquid from falling into the cathode chamber to dilute the electroplating solution in the cathode chamber and affecting the stability of the electroplating solution.
  • the specific analysis is as follows. It is found that when cleaning the substrate in the actual process, the stability of the plating solution is easily affected. In order to solve this problem, the inventor of the present application has conducted an in-depth analysis of the phenomenon. It is found that when the cleaning liquid sprayed by the nozzle 900 contacts the substrate 001, the driving device 800 drives the chuck 700 and the substrate 001 held by the chuck 700 to rotate, and most of the cleaning liquid is thrown into the water shield 600, and then drained through the drain port (not shown) set on the water shield 600, but a small part of the cleaning liquid will fall into the cathode chamber 400 below, diluting the cathode plating solution, affecting the stability of the cathode plating solution.
  • Areas A1, B1, C1, D1, A2, B2, C2, and D2 are forward rotation areas, and areas A5, B5, C5, D5, A6, B6, C6, and D6 are reverse rotation areas.
  • the amount of water falling in each area was measured and counted under the following test conditions: the central axis of the cleaning liquid sprayed from the nozzle passed through the center of the substrate, the flow rate of the cleaning liquid was 1.5l/min, the cleaning working time was maintained at 60s, and the chuck rotation speed was 400rpm.
  • Figure 3 shows the water falling results of each area in Figure 2 when the central axis of the cleaning liquid sprayed from the nozzle passed through the center of the substrate; It can be seen from Figure 3 that when the substrate is cleaned under the above conditions, after a substrate cleaning process is completed, the average total water falling amount is 120.1ml, among which the water falling amount in the forward rotation speed area is less, while the water falling amount in the reverse rotation speed area is larger, especially the water falling amount in areas C6 and D6 is larger than that in areas C2 and D2. It may be considered that the reason is that C2 and D2 are located in the cleaning liquid coverage range in the forward rotation speed area, while C6 and D6 are located in the cleaning liquid coverage range in the reverse rotation speed area.
  • the reason why the amount of water falling from C6/D6 is large is analyzed as follows: Referring to FIG. 4 , during the process of cleaning the substrate, the central axis of the cleaning liquid sprayed from the nozzle 900 passes through the center of the chuck 700, and the chuck 700 overlaps with the center of the substrate 001, so the central axis of the cleaning liquid sprayed from the nozzle 900 passes through the center of the substrate 001 held by the chuck 700, that is, the cleaning liquid is symmetrically distributed on both sides of the center of the substrate 001.
  • the range covered by the cleaning liquid is divided into a forward rotational speed region 901 and a reverse rotational speed region 902, wherein the forward rotational speed region 901 refers to the region where the flow velocity direction of the cleaning liquid sprayed from the nozzle 900 has a component along the rotational speed direction of the substrate; the reverse rotational speed region 902 refers to the region where the flow velocity direction of the cleaning liquid sprayed from the nozzle 900 has a component against the rotational speed direction of the substrate.
  • the range covered by the forward rotational speed region 901 is equal to the range covered by the reverse rotational speed region 902.
  • the driving device 800 drives the chuck 700 to rotate at a high speed with the substrate 001 held by the chuck 700.
  • the cleaning liquid sprayed by the nozzle 900 on the substrate 001 gradually flows to the edge of the substrate 001 due to the action of centrifugal force, and is then thrown into the water shield 600 (as shown by the dotted arrow S1 in Figure 1). Some of the cleaning liquid does not completely flow to the edge and will fall down (as shown by the dotted arrow S2 in Figure 1). Please refer to Figure 5.
  • the main reason for the two results is that the cleaning liquid sprayed by the nozzle 900 has its own flow velocity, and the substrate has a higher rotation speed.
  • the speeds of the two are superimposed in the forward rotation speed area, and in the reverse rotation speed area, the flow velocity of the cleaning liquid itself is opposite to the rotation speed direction of the substrate, resulting in a collision, resulting in the cleaning liquid failing to move to the edge of the substrate 001 and being thrown into the water shield 600 and falling into the electroplating chamber.
  • FIG6 the solution proposed in this application to improve the problem of large amount of water falling is specifically referred to FIG6 .
  • the nozzle 900 when the nozzle 900 is set, the nozzle 900 is offset from the center of the chuck 700 so that the cleaning liquid sprayed by the nozzle 900 to the substrate 001 covers: a forward rotation speed area 901 and a reverse rotation speed area 902, wherein the forward rotation speed area 901 is larger than the reverse rotation speed area 902.
  • the nozzle 900 sprays the cleaning liquid to the substrate 001 to clean the substrate 001, the area where the flow rate of the cleaning liquid and the centrifugal speed of the substrate collide will be reduced, thereby achieving the purpose of reducing the amount of water falling.
  • the coverage of the cleaning liquid sprayed from the nozzle 900 includes the center of the substrate 001 held by the chuck 700.
  • the distance between the boundary 9011 of the forward rotation area 901 and the center of the substrate 001 is greater than or equal to r/2
  • the distance between the boundary 9021 of the reverse rotation area 902 and the center of the substrate 001 is less than or equal to r/4, where r is the distance between the center of the substrate 001 and the edge of the substrate 001.
  • the driving device 800 drives the chuck 700 to rotate at a speed greater than or equal to 50 r/min.
  • the flow rate of the cleaning liquid sprayed from the nozzle is 0.5-2.5 LPM.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明提出一种电镀装置及基板清洁方法，属于半导体设备技术领域。包括：卡盘，用于保持基板水平设置；驱动装置，用于驱动卡盘旋转；喷嘴，用于喷出清洗液以清洗卡盘保持的基板；其中，喷嘴向基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，顺转速区域大于逆转速区域；顺转速区域为喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；逆转速区域为喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。本发明的电镀装置及基板清洁方法，针对性的设置喷嘴的位置，使喷嘴喷射的清洗液较多落在顺转速区域，以便于能够更好的甩到挡水罩中，防止大量的清洗液落入阴极腔室内对阴极电镀液稀释，影响电镀液的稳定性。

Description

电镀装置及基板清洁方法 技术领域
本申请涉及半导体设备技术领域，特别涉及一种电镀装置及基板清洁方法。
背景技术
随着半导体技术的日臻向上，半导体基板的制造正朝着多层化、积层化、功能化和集成化方向快速发展，传统的垂直电镀工艺已不能满足高质量、高可靠性互连孔的技术要求。因此，水平电镀技术应运而生。它是垂直电镀技术发展的延续，即在垂直电镀技术的基础上发展起来的一种新的电镀技术。在水平电镀过程中，电镀液的稳定性对电镀产品的可靠性影响巨大，每一个电镀工艺所用到的电镀液均有差异，为了防止不同电镀工艺中的电镀液的交叉污染，影响电镀液的稳定性，现有市场中的处理方式一般为：对经历一个电镀工艺后的基板进行清洗工艺，将基板表面所携带的电镀液清洗掉后，再将基板输送至下一电镀工艺腔体中。
然而，现有的方式进行清洗基板时，落水量较大，且会有一部分水落在电镀装置的阴极腔室内，导致阴极腔室内的电镀液被稀释，同样会影响电镀液的稳定性，因此该问题亟需被解决。
发明内容
为了避免清洗基板工艺过程中落水量较大影响电镀液的稳定性，本发明提出了一种电镀装置，包括：
卡盘，用于保持基板水平设置；
驱动装置，用于驱动所述卡盘旋转；
喷嘴，用于喷出清洗液以清洗所述卡盘保持的基板；
其中，所述喷嘴向所述基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，所述顺转速区域大于所述逆转速区域；所述顺转速区域为所述喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；所述逆转速区域为所述喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。
根据本申请实施例的一种具体实现方式，所述喷嘴为扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。
根据本申请实施例的一种具体实现方式，所述喷嘴喷射清洗液的覆盖范围包括所述卡盘保持的基板的中心。
根据本申请实施例的一种具体实现方式，所述喷嘴喷出的清洗液与所述基板相接触时，清洗液位于所述顺转速区域的边界距离所述基板中心的距离大于或等于r/2，r为基板中心距离基板边缘的距离。
根据本申请实施例的一种具体实现方式，所述喷嘴喷出的清洗液位于所述逆转速区域的边界距离所述基板中心的距离小于或等于r/4。
根据本申请实施例的一种具体实现方式，所述驱动装置驱动所述卡盘旋转的转速大于或等于50r/min。
根据本申请实施例的一种具体实现方式，所述喷嘴喷出的清洗液流速为0.5-2.5LPM。
第二方面，本发明提出一种基板清洁方法，包括：
卡盘保持基板水平设置；
驱动装置驱动卡盘旋转；
喷嘴向所述基板喷射清洗液以清洗所述卡盘保持的基板，所述喷嘴向所述基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，其中所述顺转速区域大于所述逆转速区域；所述顺转速区域为所述喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；所述逆转速区域为所述喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。
根据本申请实施例的一种具体实现方式，所述喷嘴为扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。
根据本申请实施例的一种具体实现方式，所述喷嘴喷射清洗液的覆盖范围包括所述卡盘保持的基板的中心。
根据本申请实施例的一种具体实现方式，所述喷嘴喷出的清洗液与所述基板相接触时，清洗液位于所述顺转速区域的边界距离所述基板中心的距离大于或等于r/2，r为基板中心距离基板边缘的距离。
根据本申请实施例的一种具体实现方式，所述喷嘴喷出的清洗液位于所述逆转速区域的边界距离所述基板中心的距离小于或等于r/4。
本发明的电镀装置及基板清洁方法，通过对喷嘴喷出的清洗液的覆盖范围根据基板旋转方向与清洗液的流速方向进行区域划分，针对性的设置喷嘴的位置，使清洗基板时，喷嘴喷射的清洗液较多落在顺转速区域，以便于能够更好的甩到挡水罩中，进而被排走，进而有效减少清洗基板时的落水量，防止大量的清洗液落入阴极腔室内对阴极腔室内的电镀液稀释，影响电镀液的稳定性。本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所指出的结构来实现和获得。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了本发明实施例中的电镀装置结构示意图；
图2示出了根据本发明实施例中的基板清洗过程中阴极腔室内落水区域的区域划分示意图；
图3示出了本发明实施例中的喷嘴喷出的清洗液中心轴线经过基板中心时图2中各区域的落水量结果；
图4示出了本发明实施例中的喷嘴喷出的清洗液中心轴线经过卡盘和基板中心结构示意图；
图5示出了本发明实施例中的清洗液流速示意图；
图6示出了本发明实施例中的喷嘴喷出的清洗液中心轴线不经过卡盘和基板中心结构示意图；
图7示出了本发明实施例中基板清洁方法流程示意图；以及
图8示出了本发明实施例中的喷嘴喷出的清洗液中心轴线不经过基板中心时图2中各区域的落水量结果。
本申请的较佳实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地说明，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参照图1，图1示出了本发明实施例中的电镀装置结构示意图。如图1所示，电镀装置包括电镀腔室100，电镀腔室100被水平设置的离子膜200分隔成两个独立的腔室，离子膜200的一侧是阳极腔室300，离子膜200的另一侧是阴极腔室400，阳极腔室300内部设有阳极500；阴极腔室400顶部设有挡水罩600以及用于保持基板水平设置的卡盘700，和驱动卡盘700旋转的驱动装置800，应当理解的，驱动装置800还可以被配置为驱动卡盘700在竖直方向上移动，以达到驱动卡盘进入或移出阴极腔室400以及将卡盘700保持在目标高度。实际工艺过程中，考虑到每经过一次电镀工艺的基板均需要经过一次清洗，将基板上残留的电镀液清洗掉，电镀装置还会设置用于清洗基板的喷嘴900。喷嘴900包括但不限于：扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。喷嘴900可以根据实际机台情况进行位置的设置，在本实施例中，喷嘴900固定设置于挡水罩600上，当电镀工艺结束，驱动装置800驱动卡盘700保持基板001向上移动，移出电镀液，直至移动至挡水罩600内，然后驱动装置800驱动卡盘700旋转，以清洗基板001。清洗过程中会有部分清洗液以S2的路径掉落至阴极腔400内，影响电镀液的稳定性。为此，本申请提出一种解决方案。结合参考图5，喷嘴900向基板001喷射清洗液时，要求喷嘴900向基板001喷射清洗液的覆盖范围包括：顺转速区域901和逆转速区域902，其中顺转速区域901大于逆转速区域902。具体的是，清洗液落在基板001上时，根据清洗液的流速方向对清洗液所覆盖的范围进行区域划分，可以大致划分为两个区域，一个区域为喷嘴900喷出的清洗液具有顺着基板转速方向的速度分量的区域称之为顺转速区域901；另一个区域为喷嘴900喷出的清洗液具有逆着基板转速方向的速度分量的区域称之为逆转速区域902，在实际工艺过程中，顺转速区域901内清洗液的覆盖范围的附近区域同样认为是顺转速区域；逆转速区域902内清洗液的覆盖范围的附近区域同样认为是逆转速区域。在本发明实施例中，喷嘴900向基板001喷射清洗液时，要求顺转速区域901大于逆转速区域902，以减少清洗基板001时的落水量。应当理解的是，在本实施例中，清洗液可以为去离子水。
本申请通过对喷嘴喷出的清洗液的覆盖范围根据基板旋转方向与清洗液的流速方向进行区域划分，针对性的设置喷嘴的位置，使清洗基板时，喷嘴喷射的清洗液较多落在顺转速区域，以便于能够更好的甩到挡水罩中，进而被排走，进而有效减少清洗基板时的落水量，防止大量的清洗液落入阴极腔室内对阴极腔室内的电镀液稀释，影响电镀液的稳定性。
具体分析如下，在实际工艺过程中发现清洗基板时，电镀液的稳定性容易受到影响，为了解决这个问题，本申请的发明人对该现象进行了深入分析。发现当喷嘴900喷出的清洗液与基板001相接触时，驱动装置800带动卡盘700以及卡盘700所保持的基板001旋转，将大部分的清洗液甩到挡水罩600内，然后通过挡水罩600上设置的排水口(图未示)排走，但是还有少部分的清洗液会落入下方的阴极腔室400内，对阴极电镀液进行稀释，影响阴极电镀液的稳定性。更进一步地发现，在清洗基板的过程中，基板下方各个区域的落水量并不是均匀一致的，为此本申请的发明人对基板清洗过程中，对基板下方的落水区域进行了区域划分，具体的落水区域划分示意图请参照图2，图2中左边的箭头指基板的旋转方向，右下角的箭头示意喷嘴900喷出的清洗液的方向。从图2中可以得知，A\B\C\D依次从基板001的中心由内向外延伸分布，区域A1、B1、C1、D1、A2、B2、C2、D2为顺转速区域，区域A5、B5、C5、D5、A6、B6、C6、D6为逆转速区域。以如下测试条件对各个区域的落水量进行测量统计：喷嘴喷出的清洗液中心轴线过基板中心、清洗液的流速为1.5l/min、清洗工作时间保持60s、卡盘转速400rpm，得到的结果如图3所示，图3示出了喷嘴喷出的清洗液中心轴线过基板中心时图2中各区域的落水量结果；通过图3可知，在上述条件下清洗基板时，一个基板清洗工艺结束后，平均总落水量120.1ml，其中顺转速区域内的落水量较少，而逆转速区域内的落水量较大，尤其是区域C6、D6内的落水量相较于区域C2、D2内的落水量差别较大，考虑到原因可能是C2、D2位于顺转速区域内的清洗液覆盖范围、而C6、D6位于逆转速区域内的清洗液覆盖范围。
更进一步地，C6/D6的落水量较大的原因分析如下：请参照图4，清洗基板的工艺过程中，喷嘴900喷出的清洗液的中心轴线经过卡盘700的中心，而卡盘700与基板001的中心重叠，因此喷嘴900喷出的清洗液的中心轴线会经过卡盘700所保持的基板001的中心，即清洗液对称分布于基板001中心两侧。根据喷嘴900喷出的清洗液的流速方向和基板的转速方向的关系对清洗液所覆盖的范围划分为顺转速区域901和逆转速区域902，其中，顺转速区域901是指喷嘴900喷出的清洗液的流速方向具有顺着基板转速方向的分量的区域；逆转速区域902是指喷嘴900喷出的清洗液的流速方向具有逆着基板的转速方向的分量的区域。在图4所示示例中，顺转速区域901所覆盖的范围与逆转速区域902所覆盖的范围相等。清洗工艺过程中，驱动装置800驱动卡盘700带着卡盘700所保持的基板001高速旋转，喷嘴900喷向基板001上的清洗液由于离心力的作用逐渐向基板001边缘流动，从而甩向挡水罩600中(如图1中S1虚线箭头所示)，还有部分清洗液并没有完全流到边缘便会下落(如图1中S2虚线箭头所示)，请参照图5，产生两种结果的主要原因在于喷嘴900喷出的清洗液具有自身的流速，同时基板具有较高的转速，二者在顺转速区域内速度得到叠加，在逆转速区域内清洗液自身的流速与基板的转速方向相反，发生了对冲，导致清洗液未能移动到基板001边缘被甩到挡水罩600中便落入电镀腔室内。
对此，本申请提出的改善落水量偏大问题的方案具体请参照图6，如图6所示，在设置喷嘴900时，喷嘴900相较于卡盘700中心偏置，以使喷嘴900向基板001喷射的清洗液覆盖范围包括：顺转速区域901和逆转速区域902，其中顺转速区域901大于逆转速区域902。如此一来，喷嘴900向基板001喷出清洗液对基板001进行清洗时，清洗液的流速与基板的离心速度发生对冲的区域将会减少，进而达到减少落水量的目的。
更进一步地，喷嘴900喷出的清洗液的覆盖范围包括卡盘700保持的基板001的中心。喷嘴900喷出的清洗液与基板相接触时，清洗液位于顺转速区域901的边界9011距离基板001中心的距离大于或等于r/2，喷嘴喷出的清洗液位于逆转速区域902的边界9021距离基板001中心的距离小于或等于r/4，r为基板001中心距离基板001边缘的距离。
更进一步地，驱动装置800驱动卡盘700旋转的转速大于或等于50r/min。
更进一步地，喷嘴喷出的清洗液流速为0.5-2.5LPM。
同时，本发明申请人还提出一种基板清洁方法，请参照图7，方法包括如下步骤：
步骤S100：卡盘保持基板水平设置；
步骤S200：驱动装置驱动卡盘旋转；
步骤S300：喷嘴向基板喷射清洗液以清洗卡盘保持的基板，喷嘴向基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，其中顺转速区域大于逆转速区域；顺转速区域为喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；逆转速区域为喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。
更进一步地，喷嘴为扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。
更进一步地，喷嘴喷射清洗液的覆盖范围包括卡盘保持的基板的中心，喷嘴喷出的清洗液与基板相接触时，清洗液位于顺转速区域的边界距离基板中心的距离大于或等于r/2，喷嘴喷出的清洗液位于逆转速区域的边界距离基板中心的距离小于或等于r/4，r为基板中心距离基板边缘的距离。
示例性的，请参照图6，将基板的半径r均分为6等分，在设置喷嘴900时，喷嘴900相较于卡盘和基板的中心偏置，使喷嘴900喷出的清洗液的覆盖范围包括：顺转速区域和逆转速区域，其中顺转速区域占清洗液覆盖区域的2/3，在本实施例中，清洗液位于顺转速区域的边界距离基板中心的距离为2r/3；逆转速区域占清洗液覆盖区域的1/3，在本实施例中，清洗液位于逆转速区域的边界距离基板中心的距离为1r/3；同样在清洗液的流速为1.5l/min、清洗工作时间保持60s、卡盘转速400rpm的条件下对图2中各个落水区域的落水量进行测量统计，得到的结果如图8所示，通过图8可知，在上述条件下清洗基板时，一个基板清洗工艺结束后，平均总落水量下降至89.3ml，平均落水量减少了25.6％，其中A6/B6/C6/D6区域的总落水量由11.2ml下降至0.6ml，逆转速区域的清洗液覆盖的范围的落水量下降结果尤其明显，因此，本方案对减少落水量的优化具有显著效果。
尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (12)

  1. 一种电镀装置，其特征在于：包括：
    卡盘，用于保持基板水平设置；
    驱动装置，用于驱动所述卡盘旋转；
    喷嘴，用于喷出清洗液以清洗所述卡盘保持的基板；
    其中，所述喷嘴向所述基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，所述顺转速区域大于所述逆转速区域；所述顺转速区域为所述喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；所述逆转速区域为所述喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。
  2. 根据权利要求1所述的电镀装置，其特征在于：所述喷嘴为扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。
  3. 根据权利要求1所述的电镀装置，其特征在于：所述喷嘴喷射清洗液的覆盖范围包括所述卡盘保持的基板的中心。
  4. 根据权利要求3所述的电镀装置，其特征在于：所述喷嘴喷出的清洗液与所述基板相接触时，清洗液位于所述顺转速区域的边界距离所述基板中心的距离大于或等于r/2，r为基板中心距离基板边缘的距离。
  5. 根据权利要求4所述的电镀装置，其特征在于：所述喷嘴喷出的清洗液位于所述逆转速区域的边界距离所述基板中心的距离小于或等于r/4。
  6. 根据权利要求1所述的电镀装置，其特征在于：所述驱动装置驱动所述卡盘旋转的转速大于或等于50r/min。
  7. 根据权利要求6所述的电镀装置，其特征在于：所述喷嘴喷出的清洗液流速为0.5-2.5LPM。
  8. 一种基板清洁方法，其特征在于：包括：
    卡盘保持基板水平设置；
    驱动装置驱动卡盘旋转；
    喷嘴向所述基板喷射清洗液以清洗所述卡盘保持的基板，所述喷嘴向所述基板喷射清洗液的覆盖范围包括：顺转速区域和逆转速区域，其中所述顺转速区域大于所述逆转速区域；所述顺转速区域为所述喷嘴喷出的清洗液具有顺着基板转速方向的速度分量的区域；所述逆转速区域为所述喷嘴喷出的清洗液具有逆着基板转速方向的速度分量的区域。
  9. 根据权利要求8所述的基板清洁方法，其特征在于：所述喷嘴为扇形喷嘴、圆形喷嘴、环形喷嘴或柱形喷嘴。
  10. 根据权利要求8所述的基板清洁方法，其特征在于：所述喷嘴喷射清洗液的覆盖范围包括所述卡盘保持的基板的中心。
  11. 根据权利要求10所述的基板清洁方法，其特征在于：所述喷嘴喷出的清洗液与所述基板相接触时，清洗液位于所述顺转速区域的边界距离所述基板中心的距离大于或等于r/2，r为基板中心距离基板边缘的距离。
  12. 根据权利要求11所述的基板清洁方法，其特征在于：所述喷嘴喷出的清洗液位于所述逆转速区域的边界距离所述基板中心的距离小于或等于r/4。
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282516A (ja) * 2002-03-27 2003-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2004055839A (ja) * 2002-07-19 2004-02-19 Ebara Corp 基板処理装置及び基板処理方法
JP2004146455A (ja) * 2002-10-22 2004-05-20 Sharp Corp 洗浄装置および洗浄方法
KR20090128856A (ko) * 2008-06-11 2009-12-16 주식회사 케이씨텍 매엽식 세정장치용 노즐 어셈블리
CN103418558A (zh) * 2012-05-23 2013-12-04 株式会社荏原制作所 基板清洗方法
JP2015008267A (ja) * 2013-05-28 2015-01-15 東京エレクトロン株式会社 基板洗浄装置、基板洗浄方法及び記憶媒体
CN115807253A (zh) * 2021-09-14 2023-03-17 盛美半导体设备(上海)股份有限公司 电镀装置
CN116368268A (zh) * 2021-11-04 2023-06-30 株式会社荏原制作所 镀覆装置及基板清洗方法
CN118854398A (zh) * 2023-04-28 2024-10-29 新阳硅密（上海）半导体技术有限公司 一种晶圆水平电镀和清洗一体化的工艺腔、设备及方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282516A (ja) * 2002-03-27 2003-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2004055839A (ja) * 2002-07-19 2004-02-19 Ebara Corp 基板処理装置及び基板処理方法
JP2004146455A (ja) * 2002-10-22 2004-05-20 Sharp Corp 洗浄装置および洗浄方法
KR20090128856A (ko) * 2008-06-11 2009-12-16 주식회사 케이씨텍 매엽식 세정장치용 노즐 어셈블리
CN103418558A (zh) * 2012-05-23 2013-12-04 株式会社荏原制作所 基板清洗方法
JP2015008267A (ja) * 2013-05-28 2015-01-15 東京エレクトロン株式会社 基板洗浄装置、基板洗浄方法及び記憶媒体
CN115807253A (zh) * 2021-09-14 2023-03-17 盛美半导体设备(上海)股份有限公司 电镀装置
CN116368268A (zh) * 2021-11-04 2023-06-30 株式会社荏原制作所 镀覆装置及基板清洗方法
CN118854398A (zh) * 2023-04-28 2024-10-29 新阳硅密（上海）半导体技术有限公司 一种晶圆水平电镀和清洗一体化的工艺腔、设备及方法

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