WO2025124243A1 - 电子束发生器及离子束刻蚀设备 - Google Patents
电子束发生器及离子束刻蚀设备 Download PDFInfo
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- WO2025124243A1 WO2025124243A1 PCT/CN2024/136615 CN2024136615W WO2025124243A1 WO 2025124243 A1 WO2025124243 A1 WO 2025124243A1 CN 2024136615 W CN2024136615 W CN 2024136615W WO 2025124243 A1 WO2025124243 A1 WO 2025124243A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
Definitions
- the present application relates to the field of semiconductor manufacturing, and in particular, to an electron beam generator and an ion beam etching device.
- etching can be divided into wet etching and dry etching.
- Most dry etching uses the principle of radio frequency coupling to generate a plasma source, including inductively coupled plasma (ICP) and capacitively coupled plasma (CCP), and then uses ions or free radicals in the plasma source to perform the required etching process.
- ICP inductively coupled plasma
- CCP capacitively coupled plasma
- dry etching has high etching accuracy, high controllability, and good anisotropy, and therefore has received more and more attention.
- An electron beam generator that generates an electron beam includes, for example, an ICP electron beam generator, which is a high-performance electron beam generating device. Compared with other types of electron beam generators, the ICP electron beam generator has a wide range of applicable process scenarios and a long life. Therefore, it has received more and more attention in recent years.
- the working principle of the ICP electron beam generator is as follows: Plasma is generated by inductive coupling. Among them, under the action of the space electric field, positive ions move toward the ion collector (cathode) with a negative potential, and electrons are drawn out from the outlet. The balance of these two processes maintains the stability of the operation of the ICP electron beam generator.
- the electron beam generator in the prior art has the problem of low electron extraction performance and efficiency.
- the present application aims to solve at least one of the technical problems existing in the prior art, and proposes an electron beam generator and an ion beam etching device, which can solve the problems of low electron extraction performance and efficiency of the electron beam generator in the prior art.
- an electron beam generator comprising:
- An electron beam generating cavity having an outlet
- a shielding component is movably arranged outside the electron beam generating cavity; the shielding component is arranged to shield the lead-out port, and the lead-out area of the lead-out port can be adjusted by adjusting the position of the shielding component.
- the shielding assembly includes a plurality of shielding plates arranged in sequence in the circumferential direction, the inner circumferential surfaces of the plurality of shielding plates together enclose an outlet control port, and the outlet control port is arranged corresponding to the outlet port;
- the plurality of shielding plates are all capable of moving in the radial direction of the outlet control port, and surround the outlet control port with different opening areas at different positions in the radial direction of the outlet control port.
- the outlet control port is coaxial with the outlet port.
- the electron beam generator further includes a mounting member, the mounting member is provided with a guide groove, the baffle plates are correspondingly arranged in the guide grooves, and each guide groove is used to enable the corresponding baffle plate to move radially along the lead-out control port.
- a hollow portion communicating with the guide groove is further formed on the mounting member, and the hollow portion at least partially overlaps with an orthographic projection of the outlet on a radial cross section of the outlet;
- the shielding plate can extend into the hollow portion along the radial direction of the outlet control port.
- the mounting member is an annular mounting member, and the annular hole of the annular mounting member is coaxially arranged with the outlet;
- FIG8 is a diagram showing the structure and distribution of the limit rods used in the embodiment of the present application.
- the electron beam generator provided in the embodiment of the present application further includes a shielding component 2, which is used to adjust the extraction area of the extraction port 101.
- the shielding component 2 is, for example, arranged outside the electron beam generating cavity 1 and located on the side where the extraction port 101 is located, for example, arranged between the electron beam generating cavity 1 and the extraction electrode 6.
- the shielding component 2 can also be arranged between the shielding cavity 3 and the extraction electrode 6.
- the shielding component 2 is used to adjust the extraction area of the extraction port 101.
- the extraction area of the extraction port 101 refers to the radial cross-sectional area of the opening through which electrons can pass.
- the electron beam generator 100 is controlled to adjust the extraction area of the extraction port 101 according to the amplitude of the plasma density inside the electron beam generating cavity 1, so that the extraction area can adapt to the change of the plasma sheath morphology, so that the electron extraction efficiency is always maintained at a relatively large amplitude, thereby effectively improving the performance and stability of the electron beam generator.
- the area of the lead-out port 101 shielded by the shielding component 2 can be adjusted to adjust the lead-out area of the lead-out port 101, that is, the shielding component 2 can be adjusted to shield a partial area A of the lead-out port 101, and the opening area of the unshielded area B of the lead-out port 101 is the lead-out area of the lead-out port 101.
- the opening area of the outlet 101 itself is fixed, and as the position of the shielding component 2 changes, the area of the shielded area A of the outlet 101 changes accordingly, and the area of the unshielded area B of the outlet 101 also changes accordingly, and the area of the area B is the outlet area of the outlet 101.
- the shielding component 2 can move in a variety of ways, such as translating and/or rotating in a plane parallel to the radial direction of the outlet 101, and the embodiment of the present application has no particular limitation on this.
- the shielding assembly 2 shown in FIG. 2 does not have an opening itself, and relies on its own structure to shield a part of the area of the outlet 101 to adjust the outlet area of the outlet 101.
- the embodiments of the present application are not limited to this.
- the shielding assembly 2 may also have an outlet control port 201 itself, and the outlet control port 201 is set corresponding to the outlet 101; the shielding assembly 2 is configured to be able to adjust the opening area of the outlet control port 201, that is, to adjust the area of the area corresponding to the outlet 101 and the outlet control port 201 (that is, area C in FIG. 1), so as to adjust the outlet area of the outlet 101.
- the shielding assembly 2 can shield other areas of the outlet 101 except area C in FIG. 1.
- the shielding assembly 2 for realizing the above functions can have a variety of structures.
- the shielding assembly 2 includes a plurality of shielding plates 21 arranged in sequence in the circumferential direction, and the inner circumferential surfaces 21a of the plurality of shielding plates 21 are enclosed to form an extraction control port 201; in some embodiments, the extraction control port 201 is coaxial with the extraction port 101, which is conducive to improving the extraction performance and efficiency of the electron beam.
- the plurality of shielding plates 21 can all move along the radial direction of the extraction control port 201 (i.e., the direction of the arrow in FIG.
- the inner circumferential surfaces 21a of the plurality of shielding plates 21 are all arc surfaces, and enclose a circular extraction control port 201.
- the inner circumferential surfaces 21a of the plurality of shielding plates 21 can also be planes or surfaces of other shapes to enclose extraction control ports 201 of different shapes.
- the shielding plate 21 is, for example, a flat plate with four side surfaces, one of which is the inner peripheral surface 21a, for example, an arc surface, and the other three side surfaces are all planes, wherein the plane opposite to the inner peripheral surface is the outer peripheral surface 21b, and the outer peripheral surface 21b is perpendicular to the other two planes 21c, and the other two planes 21c are parallel to the moving direction of the shielding plate 21 (i.e., parallel to the radial direction of the lead-out control port 201).
- the opening area of the lead-out control port 201 formed by the inner peripheral surfaces 21a of the plurality of shielding plates 21 is the largest, and at this time, there may be no overlap between the plurality of shielding plates 21 in the thickness direction (parallel to the axial direction of the lead-out control port 201); when the plurality of shielding plates 21 move from the maximum opening position along the radial direction of the lead-out control port 201 toward the center of the lead-out control port 201, the plurality of shielding plates 21 partially overlap in the thickness direction to reduce the opening area of the lead-out control port 201.
- the portion where each shielding plate 21 overlaps with two adjacent shielding plates 21 is located on different sides of the two adjacent shielding plates 21.
- the second shielding plate 21B is located between the first shielding plate 21A and the third shielding plate 21C
- the portion where the first shielding plate 21A overlaps with the second shielding plate 21B i.e., the portion in the dashed box D1 in FIG4
- the portion where the third shielding plate 21C overlaps with the second shielding plate 21B i.e., the portion in the dashed box D2 in FIG4
- the first shielding plate 21A and the third shielding plate 21C can be prevented from
- the thickness of the shielding plate 21 is greater than or equal to 0.5 mm.
- the electron beam generator further comprises a mounting member, the mounting member is provided with a guide groove, the shielding plate 21 is correspondingly arranged in the guide groove, and each guide groove is used to enable the corresponding shielding plate 21 to move along the radial direction of the lead-out control port 201.
- the guide groove can guide the shielding plate 21, so that the shielding plate 21 can move along the radial direction of the lead-out control port 201.
- a hollow portion connected to the guide groove is formed on the above-mentioned mounting member, and the hollow portion at least partially overlaps with the orthographic projection of the outlet 101 on the radial section of the outlet 101; the shielding plate 21 can extend into the hollow portion along the radial direction of the outlet control port 201. Specifically, when each shielding plate 21 is completely retracted into the corresponding guide groove, the opening area of the outlet control port 201 is the opening area of the overlapping area of the hollow portion and the outlet 101.
- each shielding plate 21 extends into the hollow portion along the radial direction of the outlet control port 201, multiple shielding plates 21 shield the edge area of the hollow portion, and at the same time, the inner circumference of the multiple shielding plates 21 encloses the outlet control port 201 in the hollow portion, and at this time, the opening area of the outlet control port 201 is the area of the hollow portion that is not blocked by the multiple shielding plates 21.
- the mounting member for realizing the above functions may have various structures. In some embodiments, please refer to FIG. 5A, FIG. 5B and FIG. 6 together.
- the mounting member is an annular mounting member 7, which is arranged on the surface of the side where the lead-out port 101 of the electron beam generating cavity 1 is located, for example, on the surface of the shielding cavity cover 32 away from the electron beam generating cavity 1.
- the annular hole 73 of the annular mounting member 7 is the above hollow part, and is coaxially arranged with the lead-out port 101. The opening area of the annular hole 73 should be greater than or equal to the maximum opening area of the lead-out control port 201.
- the annular mounting member 7 is formed with a plurality of guide grooves 74 arranged in sequence along the circumferential direction of the annular mounting member 7, and each guide groove 74 is formed with an opening 741 on the inner circumferential surface of the annular mounting member 7; each shielding plate 21 is arranged in each guide groove 74 in a one-to-one correspondence, and can extend into the annular hole 73 through the opening 741 along the radial direction of the lead-out control port 201, and the inner circumferential surface of each shielding plate 21 and the opening 741 are both facing the annular hole 73.
- the opening area of the lead-out control port 201 is the opening area of the annular hole 73.
- the plurality of shielding plates 21 shield the edge area of the annular hole 73 of the annular mounting member 7, and at the same time, the inner circumferential surfaces of the plurality of shielding plates 21 are enclosed in the annular hole 73 to form the lead-out control port 201.
- the orthographic projection shape of the guide groove 74 on the radial cross section of the annular mounting member 7 is adapted to the orthographic projection shape of the baffle plate 21 on the radial cross section of the annular mounting member 7.
- the baffle plate 21 is a flat plate with four side surfaces, one of which is the inner peripheral surface 21a, such as an arc surface, and the other three side surfaces are all planes, wherein the plane opposite to the inner peripheral surface 21a is the outer peripheral surface 21b, and the outer peripheral surface 21b is perpendicular to the other two planes 21c, and the other two planes 21c are perpendicular to the inner peripheral surface 21a.
- the moving directions of the baffle plate 21 are parallel to each other (i.e., parallel to the radial direction of the lead-out control port 201).
- the guide groove 74 has three side surfaces, which respectively correspond to the three side surfaces of the baffle plate 21 except the inner circumferential surface.
- One of the side surfaces 742 is opposite to the opening 741, and the other two side surfaces 743 of the guide groove 74 parallel to the radial direction of the lead-out control port 201 can guide the baffle plate 21, so that the baffle plate 21 can move along the radial direction of the lead-out control port 201.
- each baffle plate 21 extending into the hollow portion partially overlaps with the portion of the two adjacent baffle plates 21 extending into the hollow portion (e.g., the annular hole 73) in the orthographic projection on the radial cross section of the outlet 101 (e.g., in the axial direction of the annular mounting member 7). In this way, the opening area of the outlet control port 201 can be reduced. Specifically, as shown in FIG.
- the bottom surface of the guide groove 74 is an inclined surface inclined relative to the radial cross section of the annular mounting member 7, and the plurality of guide grooves 74 are inclined in the same direction, that is, the depth of each guide groove 74 increases from one side 743 to the other side 743.
- the portion of the baffle plate 21 extending into the annular hole 73 is also inclined to achieve overlap between adjacent baffle plates 21 to avoid motion interference.
- the maximum depth of one guide groove 74 is d11, and the minimum depth is d12; the maximum depth of the other guide groove 74 is d21, and the minimum depth is d22.
- the absolute value of the difference between the minimum depth d12 of one guide groove 74 and the maximum depth d21 of the other guide groove 74 is equal to the thickness of the baffle plate 21, so that it can ensure that the two adjacent baffle plates 21 are in contact, thereby forming a closed lead-out control port 201.
- a moving channel 79 is formed on the side of each guide groove 74 relative to the hollow portion (e.g., the annular hole 73) along the radial direction of the lead-out control port 201 to the outer side of the mounting member away from the side (e.g., the outer peripheral surface of the annular mounting member 7); and, as shown in FIG3A and FIG3B, the electron beam generator further includes a plurality of connecting rods 22 and a plurality of linear drive sources 23, each connecting rod 22 is correspondingly arranged in each moving channel 79, and one end of each connecting rod 22 is correspondingly connected to each shielding plate 21, and the other end is correspondingly connected to each linear drive source 23; each linear drive source 23 is used to drive the corresponding shielding plate 21 to move along the radial direction of the lead-out control port 201 through the corresponding connecting rod 22.
- the linear drive source 23 is, for example, a stepping motor, and a plurality of stepping motors can drive a plurality of shielding plates 21 to move
- the electron beam generator further comprises an annular fixing member 8, which is fixedly connected to the annular mounting member 7, and is used to restrict each shielding plate 21 in the corresponding guide groove 74.
- the annular fixing member 8 is fixedly connected to the annular mounting member 7, for example, by a plurality of screws.
- the annular hole 82 of the annular fixing member 8 is coaxially arranged with the outlet 101, and the opening area of the annular hole 82 is, for example, the same as the opening area of the annular hole 73 of the annular mounting member 7.
- a positioning structure is provided between the annular fixing member 8 and the annular mounting member 7 to define the relative position of the annular fixing member 8 and the annular mounting member 7.
- the positioning structure may have a variety of structures, for example, the positioning structure includes a protruding structure formed on the surface where the guide groove 74 of the annular mounting member 7 is located (i.e., the surface 71 in FIG. 5A and FIG. 6 ), and the protruding structure forms a positioning groove on the annular mounting member 7 to define the relative position of the annular fixing member 8 on the annular mounting member 7.
- the embodiment of the present application has no particular restrictions on the protrusion structure, as long as the relative position of the annular fixing member 8 on the annular mounting member 7 can be limited.
- the protrusion structure includes an annular protrusion 75 arranged along the outer peripheral edge of the surface where the guide groove 74 of the annular mounting member 7 is located (i.e., the surface 71 in FIG. 5A and FIG. 6), and a protrusion 76 arranged on the inner peripheral edge of the surface where the guide groove 74 of the annular mounting member 7 is located (i.e., the surface 71 in FIG. 5A and FIG.
- the inner peripheral surface of the annular protrusion 75 matches the outer peripheral surface of the annular fixing member 8; the surface of the protrusion 76 relative to the annular protrusion 75 matches the inner peripheral surface of the annular fixing member 8.
- the annular fixing member 8 is located in the annular groove formed by the annular protrusion 75 and each protrusion 76.
- the shape of the protrusion 76 located between each two adjacent guide grooves 74 can be adapted to the shape of the interval between each two adjacent guide grooves 74, for example, a triangular protrusion located at the inner peripheral edge of the interval.
- the electron beam generator also includes a plurality of limit rods 84; a plurality of limit channels 83 are formed on the surface of the annular fixing member 8 facing the annular mounting member 7 (i.e., the surface 81 in Figure 7), each of which extends radially along the lead-out control port 201, and a channel opening 831 is formed on the inner circumferential surface of the annular fixing member 8; each limit rod 84 is arranged in each limit channel 83 in a one-to-one manner, and can extend into the annular hole 83 of the annular fixing member 8 through the channel opening 831 in the radial direction of the lead-out control port 201; each limit rod 84 is stacked one-to-one on the surface of each baffle plate 21 adjacent to the annular fixing member 8, and one end of each limit rod 84 facing the channel opening 831 is fixedly connected to the inner circumferential edge of the corresponding baffle plate 21.
- each limiting rod 84 is fixedly connected to the corresponding shielding plate 21, the limiting rod 84 will slide along the limiting channel 83 driven by the shielding plate 21.
- the corresponding shielding plate 21 can be limited to prevent the shielding plate 21 from tilting.
- each limiting rod 84 facing the passage opening 831 is provided with a bent portion 841 bent in a direction close to the shielding plates 21; a fixing hole 211 is formed at the inner peripheral edge of the surface of each shielding plate 21 adjacent to the annular fixing member 8; and the bent portion 841 of each limiting rod 84 is disposed in the fixing hole 211 of the corresponding shielding plate 21. In this way, the limiting rod 84 can be easily installed and removed.
- the shielding assembly 2 is disposed between the electron beam generating cavity 1 and the extraction electrode 6, and the annular mounting member 7 and the annular fixing member 8 are both made of insulating materials, which are used to electrically insulate the electron beam generating cavity 1 from the extraction electrode 6.
- the extraction electrode 6 can be disposed on the surface of the annular fixing member 8 away from the annular mounting member 7 (i.e., the surface opposite to the surface 81 in FIG7 ), thereby facilitating the installation of the extraction electrode 6.
- the shielding plate 21 can be made of insulating material, or can also be made of metal material.
- the electron beam generator provided in the embodiment of the present application can adjust the extraction area of the extraction port of the electron beam generating cavity through the shielding component.
- the shielding component controls the shielding component to adjust the extraction area of the extraction port according to the amplitude of the plasma density inside the electron beam generating cavity, the extraction area can be adapted to the change in the morphology of the plasma sheath, so that the electron extraction efficiency is always maintained at a relatively large amplitude, thereby effectively improving the performance and stability of the electron beam generator.
- the embodiment of the present application further provides an ion beam etching device, including a process chamber 200, and an ion source generating device 300 and a carrying device 400 arranged relatively in the process chamber 200 in a first direction, wherein the ion source generating device 300 is used to generate an ion beam, and lead it into the process chamber 200 along the first direction, so that the ion beam can move toward the carrying device 400 on the opposite side.
- the carrying device 400 is used to carry a wafer, and can also be used to load radio frequency power to the wafer.
- the ion beam etching device also includes the electron beam generator 100 provided in the embodiment of the present application, which is arranged on the cavity of the process chamber 200, and the outlet of the electron beam generating cavity is connected to the process chamber 200 and faces the second direction, for extracting the electron beam into the process chamber 200.
- the second direction is at an angle with the first direction, for example, at an angle of 90°.
- the first direction is, for example, a horizontal direction
- the second direction is a vertical direction.
- a sensor and a controller are also included.
- the sensor is used to obtain the plasma density in the electron beam generating cavity.
- the controller is used to control the electron beam generator 100 to adjust the extraction area of the extraction port according to the plasma density obtained by the sensor.
- the controller is also used to control the operation of the electron beam generator 100.
- the specific control method of the controller includes: controlling the corresponding gas supply device to pass the inert gas into the electron beam generating cavity 1 through the air inlet channel in the ion collecting electrode 5; then, controlling the RF source to turn on, and loading the RF power to the RF coil 4 to excite the inert gas inside the electron beam generating cavity 1 to form plasma.
- the electrons in the plasma move from the electron extraction port 101 to the outside of the electron beam generating cavity 1 and enter the process chamber 200.
- the controller controls the shielding component 2 in the electron beam generator 100 to adjust the extraction area of the extraction port 101 according to the magnitude of the plasma density amplitude inside the electron beam generating cavity 1.
- the extraction area of the extraction port can be adapted to the changes in the morphology of the plasma sheath, so that the electron extraction efficiency is always maintained at a relatively large amplitude, thereby effectively improving the performance and stability of the electron beam generator.
- the ion beam etching equipment provided in the embodiment of the present application can maintain the electron extraction efficiency at a relatively large value by adopting the above-mentioned electron beam generator provided in the embodiment of the present application, thereby optimizing the process effect.
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Abstract
一种电子束发生器（100）及离子束刻蚀设备，该电子束发生器（100）包括：电子束生成腔体（1），具有引出口（101）；遮挡组件（2），可活动地设置于电子束生成腔体（1）之外；遮挡组件（2）被设置为遮挡引出口（101），且能够通过调节遮挡组件（2）的位置来调节引出口（101）的引出面积。可以根据电子束生成腔体（1）内部的等离子体密度幅值的大小，通过遮挡组件（2）调节引出口（101）的引出面积，可以使该引出面积能够适配等离子体鞘层形态变化，使电子引出效率始终维持在较大幅值，从而有效提高了电子束发生器（100）的性能和稳定性。
Description
本申请涉及半导体制造领域，具体地，涉及一种电子束发生器及离子束刻蚀设备。
随着微纳加工技术的发展，对刻蚀技术的要求越来越高。目前，从原理上，可将刻蚀分为湿法刻蚀和干法刻蚀。干法刻蚀大多数采用射频耦合原理产生等离子体源，包括电感耦合等离子体(Inductively Coupled Plasma，ICP)以及电容耦合等离子体(Capacitively Coupled Plasma，CCP)，进而利用等离子体源中的离子或自由基进行所需的刻蚀工艺。与湿法刻蚀相比，干法刻蚀的刻蚀精度高、可控性高、各向异性好，因而受到越来越多的关注。
对于干法刻蚀系统，除了离子源外，电子源也具有重要的作用。例如，对于高真空度(例如：气压小于10-5Torr以下)刻蚀系统，由于种子电子稀少，成功启辉成为影响系统稳定性的难点之一。提高射频系统启辉稳定性的方法之一就是提高种子电子的数量；此外，在离子束刻蚀(ion beam etching)系统中，为了减小离子之间的排斥力、提高离子束流的均匀性，以及减小晶圆表面的电荷积累、提高刻蚀速率，在进行刻蚀工艺前，需要提供足量的电子束流对引出的离子束进行中和。以上两方面都需要提供高密度、稳定输出的电子束流。
产生电子束的电子束发生器例如有ICP电子束发生器，该ICP电子束发生器是一种高性能的电子束流生成装置。相比于其他类型的电子束发生器，ICP电子束发生器的适用工艺场景范围广、寿命长。因而，近年来受到越来越多的关注。ICP电子束发生器的工作原理如下：通过电感耦合产生等离子体。其中，在空间电场的作用下，正离子向带负电位的离子收集极(阴极)运动，电子从引出口被引出。这两个过程的平衡，维持ICP电子束发生器运行的稳定性。
但是，现有技术中电子束发生器存在电子引出性能及效率低的问题。
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种电子束发生器及离子束刻蚀设备，其可以解决现有技术中电子束发生器存在电子引出性能及效率低的问题。
为实现本申请的目的而提供一种电子束发生器，包括：
电子束生成腔体，具有引出口；
遮挡组件，可活动地设置于所述电子束生成腔体之外；所述遮挡组件被设置为遮挡所述引出口，且能够通过调节所述遮挡组件的位置来调节所述引出口的引出面积。
在一些实施例中，所述遮挡组件包括在周向上依次排布的多个遮挡板，多个所述遮挡板的内周面合围构成引出控制口，所述引出控制口与所述引出口对应设置；
多个所述遮挡板均能够沿所述引出控制口的径向移动，且在所述引出控制口的径向上的不同位置处合围构成开口面积不同的所述引出控制口。
在一些实施例中，所述引出控制口与所述引出口同轴。
在一些实施例中，所述电子束发生器还包括安装件，所述安装件设置有导向槽，所述遮挡板对应地设置于所述导向槽中，各所述导向槽用于使对应的所述遮挡板沿所述引出控制口的径向移动。
在一些实施例中，所述安装件上还形成有与所述导向槽连通的镂空部，所述镂空部与所述引出口在所述引出口的径向截面上的正投影至少部分重叠；
所述遮挡板能够沿所述引出控制口的径向伸入至所述镂空部中。
在一些实施例中，所述安装件为环形安装件，所述环形安装件的环孔与所述引出口同轴设置；
每个所述导向槽均在所述环形安装件的内周面上形成有开口；各所述遮挡板能够沿所述引出控制口的径向经由所述开口伸入至所述环孔中，并且各所述遮挡板的内周面与所述开口均朝向所述环孔。
在一些实施例中，每个所述遮挡板伸入至所述镂空部中的部分，与相邻的两个所述遮挡板伸入至所述镂空部中的部分在所述引出口的径向截面上的正投影部分交叠。
在一些实施例中，每个所述遮挡板与相邻的两个所述遮挡板的交叠部分，分别位于相邻的两个所述遮挡板的不同侧。
在一些实施例中，在每个所述导向槽的相对于所述镂空部的侧面形成有沿所述引出控制口的径向贯通至所述安装件的背离所述侧面的外侧面的移动通道；
所述电子束发生器还包括多个连接杆和多个直线驱动源，各所述连接杆一一对应地穿设于各所述移动通道，且各所述连接杆的一端一一对应地与各所述遮挡板连接，另一端一一对应地与各所述直线驱动源连接；各所述直线驱动源用于通过对应的所述连接杆驱动对应的所述遮挡板沿所述引出控制口的径向移动。
在一些实施例中，所述电子束发生器还包括环形固定件，所述环形固定件与所述环形安装件固定连接，用于将各所述遮挡板限制在对应的所述导向槽中。
在一些实施例中，所述环形固定件与所述环形安装件之间设置有定位结构，用于限定所述环形固定件与所述环形安装件的相对位置。
在一些实施例中，所述定位结构包括形成于所述环形安装件的所述导向槽所在表面上的凸起结构，所述凸起结构在所述环形安装件上构成定位凹槽，用于限定所述环形固定件在所述环形安装件上的相对位置。
在一些实施例中，所述凸起结构包括沿所述环形安装件的所述导向槽所在表面的外周边缘设置的环形凸起，和设置于所述环形安装件的所述导向槽所在表面的内周边缘，且位于各相邻的两个所述导向槽之间的凸块，所述环形凸起的内周面与所述环形固定件的外周面相配合；所述凸块的相对于所述环形凸起的表面与所述环形固定件的内周面相配合。
在一些实施例中，所述电子束发生器还包括多个限位杆；
所述环形固定件朝向所述环形安装件的表面上形成有多个限位通道，每个所述限位通道均沿所述引出控制口的径向延伸，且在所述环形固定件的内周面形成有通道开口；各所述限位杆一一对应地设置于各所述限位通道中，且能够沿所述引出控制口的径向经由所述通道开口伸入至所述环形固定件的环孔中；
各所述限位杆一一对应地叠置于各所述遮挡板相邻于所述环形固定件的表面，且各所述限位杆的朝向所述通道开口的一端与对应的所述遮挡板的内周边缘固定连接。
在一些实施例中，每个所述限位杆的朝向所述通道开口的一端设置有沿靠近所述遮挡板的方向弯折的弯折部；每个所述遮挡板的相邻于所述环形固定件的表面的内周边缘处形成有固定孔；
各所述限位杆的所述弯折部设置于对应的各所述遮挡板的所述固定孔中。
作为另一个技术方案，本申请还提供一种离子束刻蚀设备，包括工艺腔室，和在第一方向上相对设置于所述工艺腔室内的离子源生成装置和承载装置，还包括本申请提供的上述电子束发生器，所述电子束发生器设置于所述工艺腔室的腔体上，且所述引出口与所述工艺腔室连通，且朝向第二方向，用于向所述工艺腔室内引出电子束，其中，所述第二方向与所述第一方向成角度。
在一些实施例中，还包括传感器和控制器，所述传感器用于获取所述电子束生成腔体中等离子体密度，所述控制器用于根据所述传感器获取的所述等离子体密度，控制控制所述电子束发生器中的所述遮挡组件调节所述引出口的引出面积。
本申请具有以下有益效果：
本申请提供的电子束发生器，可以通过遮挡组件，调节电子束生成腔体的引出口的引出面积。由于电子束的引出性能和效率与引出口表面的等离子体鞘层形态密切相关，而引出口表面的等离子体鞘层形态又与电子束生成腔体内部生成的等离子体密度密切相关，基于此，由于相关技术中引出口的引出面积是固定的，其只能适配电子束发生器的一种工作条件，即，电子束生成腔体内部的某一等离子体密度和与之对应的引出口表面的等离子体鞘层形态，在该工作条件不变的情况下，引出口的引出面积可以实现最优的引出性能和效率。但是，在该工作条件发生变化时，即电子束生成腔体内部的等离子体密度发生变化，等离子体鞘层形态也随之变化，此时固定不变的引出面积无法适配等离子体鞘层形态变化，从而无法使电子引出效率始终维持在较大幅值。对此，本申请的方案在电子运动的过程中，通过根据电子束生成腔体内部的等离子体密度幅值的大小，控制遮挡组件调节引出口的引出面积，可以使该引出面积能够适配等离子体鞘层形态变化，使电子引出效率始终维持在较大幅值，从而有效提高了电子束发生器的性能和稳定性。
本申请提供的离子束刻蚀设备，其通过采用本申请提供的上述电子束发生器，可以使电子引出效率始终维持在较大幅值，从而可以优化工艺效果。
图1为本申请实施例提供的一种电子束发生器的剖面图；
图2为本申请实施例采用的一种遮挡组件与电子束生成腔体的位置关系图；
图3A为本申请实施例采用的另一种遮挡组件在一个视角的立体结构图；
图3B为本申请实施例采用的另一种遮挡组件在另一个视角的立体结构图；
图4为本申请实施例采用的另一种遮挡组件的立体剖视图；
图5A为本申请实施例采用的环形安装件在一个视角的立体剖视图；
图5B为本申请实施例采用的环形安装件在另一个视角的立体剖视图；
图6为本申请实施例采用的环形安装件与遮挡组件的分解图；
图7为本申请实施例采用的环形固定件的立体图；
图8为本申请实施例采用的限位杆的结构和分布图；
图9为本申请实施例采用的环形安装件、遮挡组件和环形固定件的分解图；
图10为本申请实施例采用的环形安装件、遮挡组件和环形固定件的装配图；
图11为本申请实施例提供的离子束刻蚀设备的结构示意图。
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的电子束发生器及离子束刻蚀设备进行详细描述。
请参阅图1，本申请实施例提供一种电子束发生器100，包括具有引出口101的电子束生成腔体1。在一些实施例中，电子束发生器100还包括引出电极6、屏蔽腔体3、射频线圈4和离子收集极5，其中，该电子束生成腔体1具有上述引出口101，电子束生成腔体1中的电子可以从该引出口101运动至电子束生成腔体1外部。该引出口101具体可以为设置在电子束生成腔体1的腔壁(例如下腔壁)中的通孔，该通孔可以是直通孔，也可以是变径孔，例如锥形孔，该锥形孔的直径沿电子的运动方向递增。
引出电极6设置于电子束生成腔体1外部，且间隔地位于引出口101所在一侧，引出电极6具有第一引出口61，该第一引出口61与引出口101对应设置，该第一引出口61大于等于引出口101，用于对电子的运动起到导向作用。上述电子束生成腔体1设置于屏蔽腔体3的内部，具体可以通过紧固件11固定于屏蔽腔体3的上腔壁。屏蔽腔体3用于屏蔽电子束生成腔体1中的电场，避免对外部零件产生干扰。屏蔽腔体3的相邻于引出口101的腔壁上设置有用于使电子通过的第二引出口33。该第二引出口33与引出口101对应设置(例如同轴设置)，且第二引出口33大于等于引出口101，以避免影响电子的运动。具体地，屏蔽腔体3包括一端敞开的屏蔽腔主体31和与该屏蔽腔主体31密封连接的屏蔽腔盖体32，该屏蔽腔盖体32叠置于电子束生成腔体1的第二引出口33所在腔壁的外表面，用于密封屏蔽腔主体31敞开一端，上述第二引出口33例如为设置于屏蔽腔盖体32中的通孔。
屏蔽腔体3的内表面与电子束生成腔体1的外表面之间在周向上具有环形空间34，该环形空间34例如由屏蔽腔主体31的内周面、电子束生成腔体1的外周面、屏蔽腔主体31的上腔壁的内表面和屏蔽腔盖体32的内表面合围而成。射频线圈4设置在上述环形空间34中，且环绕在电子束生成腔体1周围，射频线圈4用于与射频源电连接，射频源例如包括射频电源和阻抗匹配器，射频电源通过阻抗匹配器与射频线圈4电连接，用于向射频线圈4加载射频功率，以激发电子束生成腔体1内的气体(例如惰性气体)形成等离子体。
离子收集极5的一端自屏蔽腔体3远离第二引出口33的一侧(例如屏蔽腔体3的上侧)依次贯通屏蔽腔体3和电子束生成腔体1，并延伸至电子束生成腔体1的内部，该离子收集极5中设置有用于与气源连接的进气通道，且该进气通道的进气口51与电子束生成腔体1的内部连通，用于向电子束生成腔体1内部通入气体(例如惰性气体)。在一些实施例中，离子收集极5呈管状，管的内部空间即为上述进气通道，上述进气口51为多个，且沿周向均匀分布于管壁中，该进气口51例如为沿径向贯通管壁的通孔。
在电子束发生器100工作时，通过离子收集极5向电子束生成腔体1内部通入惰性气体，并开启射频源，向射频线圈4加载射频功率，以激发电子束生成腔体1内部的惰性气体形成等离子体，并且离子收集极5带正电位，引出电极6带负电位，二者之间形成空间电场，等离子体中的正离子向带负电位的离子收集极5运动，而等离子体中的电子向带正电位的引出电极6运动，并从引出口101运动至电子束生成腔体1外部。
发明人发现：电子束的引出性能和效率与引出口101表面的等离子体鞘层形态密切相关，而引出口101表面的等离子体鞘层形态又与电子束生成腔体1内部生成的等离子体密度密切相关，基于此，由于相关技术中引出口101的引出面积是固定的，其只能适配电子束发生器的一种工作条件，即，电子束生成腔体内部的某一等离子体密度和与之对应的引出口101表面的等离子体鞘层形态，在该工作条件不变的情况下，引出口101的上述固定的引出面积可以实现最优的引出性能和效率。也就是说，引出口101的一种引出面积只能是在某一种工作条件下，使电子引出效率维持在较大幅值的最优尺寸。但是，在该工作条件发生变化时，即电子束生成腔体内部的等离子体密度发生变化，等离子体鞘层形态也随之变化，此时固定不变的引出面积无法适配等离子体鞘层形态变化，从而无法使电子引出效率始终维持在较大幅值，导致电子束的引出性能和效率降低。
为了解决上述问题，本申请实施例提供的电子束发生器还包括遮挡组件2，该遮挡组件2用于调节引出口101的引出面积。具体地，遮挡组件2例如设置于电子束生成腔体1之外，且位于引出口101所在一侧，例如设置于电子束生成腔体1与引出电极6之间。在设置有屏蔽腔体3的情况下，如图1所示，遮挡组件2还可以设置于屏蔽腔体3与引出电极6之间。
遮挡组件2用于调节引出口101的引出面积。所谓引出口101的引出面积，是指能够使电子通过的开口径向截面面积。在电子运动的过程中，通过根据电子束生成腔体1内部的等离子体密度幅值的大小，控制电子束发生器100调节引出口101的引出面积，可以使该引出面积能够适配等离子体鞘层形态变化，使电子引出效率始终维持在较大幅值，从而有效提高了电子束发生器的性能和稳定性。
上述遮挡组件2调节引出口101的引出面积的方式可以有多种，例如，如图2所示，该遮挡组件2可活动地设置于电子束生成腔体1之外，例如设置于电子束生成腔体1之外的引出口101所在一侧。遮挡组件2被设置为遮挡引出口101，且能够通过调节遮挡组件2的位置来调节引出口101的引出面积。也就是说，通过调节遮挡组件2的位置，可以调节遮挡组件2遮挡引出口101的面积，以实现调节引出口101的引出面积，即调节遮挡组件2可以遮挡引出口101的部分区域A，而引出口101的未被遮挡的区域B的开口面积即为引出口101的引出面积。容易理解的是，引出口101本身的开口面积是固定的，而随着遮挡组件2的位置变化，引出口101被遮挡的部分区域A的面积随之变化，同时引出口101的未被遮挡的区域B的面积也随之变化，该区域B的面积即为引出口101的引出面积。遮挡组件2的活动方式可以有多种，例如可以在平行于引出口101的径向的平面内平移和/或转动，本申请实施例对此没有特别的限制。
图2中示出的上述遮挡组件2自身不设置开口，依靠自身结构遮挡引出口101的部分区域来调节引出口101的引出面积，但是，本申请实施例并不局限于此，在另一些实施例中，例如，如图1所示，遮挡组件2也可以本身具有引出控制口201，该引出控制口201与引出口101对应设置；遮挡组件2被设置为能够调节引出控制口201的开口面积，即调节引出口101与引出控制口201对应的区域(即，图1中的区域C)的面积，从而可以实现调节引出口101的引出面积。容易理解的是，遮挡组件2可以遮挡引出口101的除图1中的区域C之外的其他区域。
实现上述功能的遮挡组件2可以有多种结构，例如，如图3A和图3B所示，遮挡组件2包括在周向上依次排布的多个遮挡板21，多个遮挡板21的内周面21a合围构成引出控制口201；在一些实施例中，引出控制口201与引出口101同轴，这样有利于提高电子束的引出性能和效率。多个遮挡板21均能够沿引出控制口201的径向(即，图3A中的箭头方向)移动，且在引出控制口201的径向上的不同位置处合围构成开口面积不同的引出控制口201。在一些实施例中，多个遮挡板21的内周面21a均为圆弧面，且合围构成圆形的引出控制口201。当然，在实际应用中，根据不同的需求，多个遮挡板21的内周面21a也可以为平面或者其他形状的表面，以合围构成不同形状的引出控制口201。
具体来说，上述遮挡板21例如为具有四个侧面的平板，其中一个侧面为上述内周面21a，例如为圆弧面，其余三个侧面均为平面，其中，与内周面相对的平面为外周面21b，该外周面21b与另外两个平面21c相互垂直，另外两个平面21c与该遮挡板21的移动方向相互平行(即，平行于引出控制口201的径向)。多个遮挡板21位于最大开口位置时，多个遮挡板21的内周面21a合围构成的引出控制口201的开口面积最大，此时多个遮挡板21之间在厚度方向(平行于引出控制口201的轴向)上可以没有交叠；多个遮挡板21在自该最大开口位置沿引出控制口201的径向朝引出控制口201的中心移动的过程中，多个遮挡板21之间在厚度方向上产生部分交叠，以缩小引出控制口201的开口面积。进一步地，在一些实施例中，每个遮挡板21与相邻的两个遮挡板21交叠的部分，分别位于相邻的两个遮挡板21的不同侧，具体来说，如图4所示，对于每相邻的三个遮挡板21，分别为第一遮挡板21A、第二遮挡板21B和第三遮挡板21C，第二遮挡板21B位于第一遮挡板21A与第三遮挡板21C之间，且第一遮挡板21A与第二遮挡板21B交叠的部分(即图4中虚线框D1中的部分)位于第二遮挡板21B靠近引出口101一侧，第三遮挡板21C与第二遮挡板21B交叠的部分(即图4中虚线框D2中的部分)位于第二遮挡板21B远离引出口101一侧。这样，可以避免第一遮挡板21A与第三遮挡板21C因位于第二遮挡板21B的同一侧而产生运动干涉。
在一些实施例中，考虑到遮挡板21的耐损能力，遮挡板21的厚度大于等于0.5mm。
在一些实施例中，电子束发生器还包括安装件，该安装件设置有导向槽，遮挡板21对应地设置于该导向槽中，各导向槽用于使对应的遮挡板21沿引出控制口201的径向移动。导向槽可以对遮挡板21起到导向作用，使遮挡板21能够沿引出控制口201的径向移动。
进一步地，在一些实施例中，上述安装件上还形成有与导向槽连通的镂空部，该镂空部与引出口101在引出口101的径向截面上的正投影至少部分重叠；遮挡板21能够沿引出控制口201的径向伸入至该镂空部中。具体来说，当各遮挡板21完全回缩至对应的导向槽中时，引出控制口201的开口面积即为镂空部与引出口101的重叠区域的开口面积。当各遮挡板21沿引出控制口201的径向伸入至镂空部中时，多个遮挡板21遮挡镂空部的边缘区域，同时多个遮挡板21的内周面在镂空部中合围构成引出控制口201，此时引出控制口201的开口面积即为镂空部的未被多个遮挡板21遮挡的区域。
实现上述功能的安装件可以有多种结构，在一些实施例中，请一并参阅图5A、图5B和图6，安装件未环形安装件7，该环形安装件7设置于电子束生成腔体1的引出口101所在一侧表面，例如设置于屏蔽腔盖体32的远离电子束生成腔体1一侧的表面。环形安装件7的环孔73即为上述镂空部，且与引出口101同轴设置，该环孔73的开口面积应大于等于引出控制口201的最大开口面积。
环形安装件7上形成有沿环形安装件7的周向依次排布的多个导向槽74，每个导向槽74均在环形安装件7的内周面上形成有开口741；各遮挡板21一一对应地设置于各导向槽74中，且能够沿引出控制口201的径向经由开口741伸入至环孔73中，并且各遮挡板21的内周面与开口741均朝向环孔73。具体来说，当各遮挡板21完全回缩至对应的导向槽74中时，引出控制口201的开口面积即为环孔73的开口面积。当各遮挡板21沿引出控制口201的径向经由开口741伸入至环孔73中时，多个遮挡板21遮挡环形安装件7的环孔73的边缘区域，同时多个遮挡板21的内周面在环孔73中合围构成引出控制口201。进一步地，在一些实施例中，导向槽74在环形安装件7的径向截面上的正投影形状与遮挡板21在环形安装件7的径向截面上的正投影形状相适配，例如，遮挡板21为具有四个侧面的平板，其中一个侧面为上述内周面21a，例如为圆弧面，其余三个侧面均为平面，其中，与内周面21a相对的平面为外周面21b，该外周面21b与另外两个平面21c相互垂直，另外两个平面21c与该遮挡板21的移动方向相互平行(即，平行于引出控制口201的径向)，在这种情况下，对应的，如图5A所示，导向槽74具有三个侧面，分别与遮挡板21除了内周面之外的三个侧面相对应，其中一个侧面742与开口741相对，导向槽74的平行于引出控制口201的径向的另外两个侧面743可以对遮挡板21起到导向作用，使遮挡板21能够沿引出控制口201的径向移动。
在一些实施例中，每个遮挡板21伸入至镂空部(例如环孔73)中的部分，和与相邻的两个遮挡板21伸入至镂空部(例如环孔73)中的部分在引出口101的径向截面上的正投影(例如，在环形安装件7的轴向)上部分交叠。这样可以实现缩小引出控制口201的开口面积。具体地，如图5B所示，导向槽74的底面为相对于环形安装件7的径向截面倾斜的斜面，且多个导向槽74均朝同一方向倾斜，即，每个导向槽74的深度自其中一侧面743向另一侧面743递增。这样，在导向槽74的导向作用下，遮挡板21伸入至环孔73中的部分同样是倾斜的，以实现相邻遮挡板21之间的交叠，避免产生运动干涉。进一步地，对于相邻的两个导向槽74，其中一个导向槽74的最大深度为d11，最小深度为d12；另一个导向槽74的最大深度为d21，最小深度为d22，在这种情况下，其中一个导向槽74的最小深度d12与另一个导向槽74的最大深度d21的差值绝对值等于遮挡板21的厚度，这样可以确保相邻两个遮挡板21相接触，从而可以构成封闭的引出控制口201。
在一些实施例中，在每个导向槽74的相对于镂空部(例如环孔73)的侧面形成有沿引出控制口201的径向贯通至安装件的背离该侧面的外侧面(例如环形安装件7的外周面)的移动通道79；并且，如图3A和图3B所示，电子束发生器还包括多个连接杆22和多个直线驱动源23，各连接杆22一一对应地穿设于各移动通道79，且各连接杆22的一端一一对应地与各遮挡板21连接，另一端一一对应地与各直线驱动源23连接；各直线驱动源23用于通过对应的连接杆22驱动对应的遮挡板21沿引出控制口201的径向移动。直线驱动源23例如为步进电机，多个为步进电机可以驱动多个遮挡板21同步移动。
在一些实施例中，如图7所示，电子束发生器还包括环形固定件8，该环形固定件8与环形安装件7固定连接，用于将各遮挡板21限制在对应的导向槽74中。环形固定件8与环形安装件7例如采用多个螺钉固定连接。环形固定件8的环孔82与引出口101同轴设置，该环孔82的开口面积例如与环形安装件7的环孔73的开口面积相同。
在一些实施例中，在环形固定件8与环形安装件7之间设置有定位结构，用于限定环形固定件8与环形安装件7的相对位置。该定位结构可以有多种结构，例如，定位结构包括形成于环形安装件7的导向槽74所在表面(即，图5A和图6中的表面71)上的凸起结构，该凸起结构在环形安装件7上构成定位凹槽，用于限定环形固定件8在环形安装件7上的相对位置。本申请实施例对凸起结构没有特别的限制，只要能够实现限定环形固定件8在环形安装件7上的相对位置即可，例如，如图5A、图5B、图9和图10所示，凸起结构包括沿环形安装件7的导向槽74所在表面(即，图5A和图6中的表面71)的外周边缘设置的环形凸起75，和设置于环形安装件7的导向槽74所在表面(即，图5A和图6中的表面71)的内周边缘，且位于各相邻的两个导向槽74之间的凸块76，环形凸起75的内周面与环形固定件8的外周面相配合；凸块76的相对于环形凸起75的表面与环形固定件8的内周面相配合。也就是说，环形固定件8位于环形凸起75与各凸块76构成的环形凹槽中。位于各相邻的两个导向槽74之间的凸块76形状可以与各相邻的两个导向槽74之间的间隔形状相适配，例如为三角形凸块，且位于该间隔的内周边缘处。
在一些实施例中，请一并参阅图7至图10，电子束发生器还包括多个限位杆84；环形固定件8朝向环形安装件7的表面(即，图7中的表面81)上形成有多个限位通道83，每个限位通道83均沿引出控制口201的径向延伸，且在环形固定件8的内周面形成有通道开口831；各限位杆84一一对应地设置于各限位通道83中，且能够沿引出控制口201的径向经由通道开口831伸入至环形固定件8的环孔83中；各限位杆84一一对应地叠置于各遮挡板21相邻于环形固定件8的表面，且各限位杆84的朝向通道开口831的一端与对应的遮挡板21的内周边缘固定连接。在遮挡板21沿引出控制口201的径向移动时，由于各限位杆84与对应的遮挡板21固定连接，限位杆84会在遮挡板21的带动下沿限位通道83滑动。借助限位杆84，可以对对应的遮挡板21起到限位作用，避免遮挡板21翘起。
各限位杆84与对应的遮挡板21固定连接的方式可以有多种，在一些实施例中，每个限位杆84的朝向通道开口831的一端设置有沿靠近遮挡板21的方向弯折的弯折部841；每个遮挡板21的相邻于环形固定件8的表面的内周边缘处形成有固定孔211；各限位杆84的弯折部841设置于对应的各遮挡板21的固定孔211中。这样，可以便于限位杆84的安装和拆卸。
在一些实施例中，如图1所示，遮挡组件2设置于电子束生成腔体1与引出电极6之间，且环形安装件7和环形固定件8均采用绝缘材料制作，用于将电子束生成腔体1与引出电极6电绝缘。这样，引出电极6可以设置于环形固定件8远离环形安装件7一侧的表面(即，与图7中的表面81相对的表面)，从而便于引出电极6的安装。另外，遮挡板21可以采用绝缘材料，或者也可以采用金属材料。
综上所述，本申请实施例提供的电子束发生器，可以通过遮挡组件，调节电子束生成腔体的引出口的引出面积。在电子运动的过程中，通过根据电子束生成腔体内部的等离子体密度幅值的大小，控制遮挡组件调节引出口的引出面积，可以使该引出面积能够适配等离子体鞘层形态变化，使电子引出效率始终维持在较大幅值，从而有效提高了电子束发生器的性能和稳定性。
作为另一个技术方案，请参阅图11，本申请实施例还提供一种离子束刻蚀设备，包括工艺腔室200，和在第一方向上相对设置于工艺腔室200内的离子源生成装置300和承载装置400，该离子源生成装置300用于产生离子束，并沿第一方向引出至工艺腔室200中，以使离子束能够朝向对侧的承载装置400运动。承载装置400用于承载晶圆，还可以用于向晶圆加载射频功率。
离子束刻蚀设备还包括本申请实施例提供的上述电子束发生器100，该电子束发生器100设置于工艺腔室200的腔体上，且电子束生成腔体的引出口与工艺腔室200连通，且朝向第二方向，用于向工艺腔室200内引出电子束。上述第二方向与第一方向成夹角，例如成90°夹角。具体地，上述第一方向例如为水平方向，第二方向为竖直方向。
在一些实施例中，还包括传感器和控制器，该传感器用于获取电子束生成腔体中等离子体密度，控制器用于根据传感器获取的等离子体密度，控制电子束发生器100调节引出口的引出面积。
上述控制器还用于控制电子束发生器100工作，以图1示出的电子束发生器100为例，控制器的具体控制方法包括：控制相应的供气装置通过离子收集极5中的进气通道，向电子束生成腔体1内部通入惰性气体；然后，控制射频源开启，向射频线圈4加载射频功率，以激发电子束生成腔体1内部的惰性气体形成等离子体，等离子体中的电子在离子收集极5与引出电极6之间形成的空间电场作用下，从电子引出口101运动至电子束生成腔体1外部，并进入工艺腔室200。而且，在电子运动的过程中，控制器根据电子束生成腔体1内部的等离子体密度幅值的大小，控制电子束发生器100中的遮挡组件2调节引出口101的引出面积。这样，可以使引出口的引出面积能够适配等离子体鞘层形态变化，使电子引出效率始终维持在较大幅值，从而有效提高了电子束发生器的性能和稳定性。
本申请实施例提供的离子束刻蚀设备，其通过采用本申请实施例提供的上述电子束发生器，可以使电子引出效率始终维持在较大幅值，从而可以优化工艺效果。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。
Claims (17)
- 一种电子束发生器，其特征在于，包括：电子束生成腔体，具有引出口；遮挡组件，可活动地设置于所述电子束生成腔体之外；所述遮挡组件被设置为遮挡所述引出口，且能够通过调节所述遮挡组件的位置来调节所述引出口的引出面积。
- 根据权利要求1所述的电子束发生器，其特征在于，所述遮挡组件包括在周向上依次排布的多个遮挡板，多个所述遮挡板的内周面合围构成引出控制口，所述引出控制口与所述引出口对应设置；多个所述遮挡板均能够沿所述引出控制口的径向移动，且在所述引出控制口的径向上的不同位置处合围构成开口面积不同的所述引出控制口。
- 根据权利要求2所述的电子束发生器，其特征在于，所述引出控制口与所述引出口同轴。
- 根据权利要求2所述的电子束发生器，其特征在于，所述电子束发生器还包括安装件，所述安装件设置有导向槽，所述遮挡板对应地设置于所述导向槽中，各所述导向槽用于使对应的所述遮挡板沿所述引出控制口的径向移动。
- 根据权利要求4所述的电子束发生器，其特征在于，所述安装件上还形成有与所述导向槽连通的镂空部，所述镂空部与所述引出口在所述引出口的径向截面上的正投影至少部分重叠；所述遮挡板能够沿所述引出控制口的径向伸入至所述镂空部中。
- 根据权利要求5所述的电子束发生器，其特征在于，所述安装件为环形安装件，所述环形安装件的环孔与所述引出口同轴设置；每个所述导向槽均在所述环形安装件的内周面上形成有开口；各所述遮挡板能够沿所述引出控制口的径向经由所述开口伸入至所述环孔中，并且各所述遮挡板的内周面与所述开口均朝向所述环孔。
- 根据权利要求5所述的电子束发生器，其特征在于，每个所述遮挡板伸入至所述镂空部中的部分，与相邻的两个所述遮挡板伸入至所述镂空部中的部分在所述引出口的径向截面上的正投影部分交叠。
- 根据权利要求7所述的电子束发生器，其特征在于，每个所述遮挡板与相邻的两个所述遮挡板的交叠部分，分别位于相邻的两个所述遮挡板的不同侧。
- 根据权利要求5所述的电子束发生器，其特征在于，在每个所述导向槽的相对于所述镂空部的侧面形成有沿所述引出控制口的径向贯通至所述安装件的背离所述侧面的外侧面的移动通道；所述电子束发生器还包括多个连接杆和多个直线驱动源，各所述连接杆一一对应地穿设于各所述移动通道，且各所述连接杆的一端一一对应地与各所述遮挡板连接，另一端一一对应地与各所述直线驱动源连接；各所述直线驱动源用于通过对应的所述连接杆驱动对应的所述遮挡板沿所述引出控制口的径向移动。
- 根据权利要求6所述的电子束发生器，其特征在于，所述电子束发生器还包括环形固定件，所述环形固定件与所述环形安装件固定连接，用于将各所述遮挡板限制在对应的所述导向槽中。
- 根据权利要求10所述的电子束发生器，其特征在于，所述环形固定件与所述环形安装件之间设置有定位结构，用于限定所述环形固定件与所述环形安装件的相对位置。
- 根据权利要求11所述的电子束发生器，其特征在于，所述定位结构包括形成于所述环形安装件的所述导向槽所在表面上的凸起结构，所述凸起结构在所述环形安装件上构成定位凹槽，用于限定所述环形固定件在所述环形安装件上的相对位置。
- 根据权利要求12所述的电子束发生器，其特征在于，所述凸起结构包括沿所述环形安装件的所述导向槽所在表面的外周边缘设置的环形凸起，和设置于所述环形安装件的所述导向槽所在表面的内周边缘，且位于各相邻的两个所述导向槽之间的凸块，所述环形凸起的内周面与所述环形固定件的外周面相配合；所述凸块的相对于所述环形凸起的表面与所述环形固定件的内周面相配合。
- 根据权利要求10所述的电子束发生器，其特征在于，所述电子束发生器还包括多个限位杆；所述环形固定件朝向所述环形安装件的表面上形成有多个限位通道，每个所述限位通道均沿所述引出控制口的径向延伸，且在所述环形固定件的内周面形成有通道开口；各所述限位杆一一对应地设置于各所述限位通道中，且能够沿所述引出控制口的径向经由所述通道开口伸入至所述环形固定件的环孔中；各所述限位杆一一对应地叠置于各所述遮挡板相邻于所述环形固定件的表面，且各所述限位杆的朝向所述通道开口的一端与对应的所述遮挡板的内周边缘固定连接。
- 根据权利要求14所述的电子束发生器，其特征在于，每个所述限位杆的朝向所述通道开口的一端设置有沿靠近所述遮挡板的方向弯折的弯折部；每个所述遮挡板的相邻于所述环形固定件的表面的内周边缘处形成有固定孔；各所述限位杆的所述弯折部设置于对应的各所述遮挡板的所述固定孔中。
- 一种离子束刻蚀设备，包括工艺腔室，和在第一方向上相对设置于所述工艺腔室内的离子源生成装置和承载装置，其特征在于，还包括如权利要求1-15中任意一项所述的电子束发生器，所述电子束发生器设置于所述工艺腔室的腔体上，且所述引出口与所述工艺腔室连通，且朝向第二方向，用于向所述工艺腔室内引出电子束，其中，所述第二方向与所述第一方向成角度。
- 根据权利要求16所述的离子束刻蚀设备，其特征在于，还包括传感器和控制器，所述传感器用于获取所述电子束生成腔体中等离子体密度，所述控制器用于根据所述传感器获取的所述等离子体密度，控制所述电子束发生器中的所述遮挡组件调节所述引出口的引出面积。
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| JP2003066199A (ja) * | 2001-08-29 | 2003-03-05 | Nissin High Voltage Co Ltd | 電子源 |
| JP2011065968A (ja) * | 2009-09-18 | 2011-03-31 | Ulvac Japan Ltd | イオンビーム照射装置 |
| JP2011216303A (ja) * | 2010-03-31 | 2011-10-27 | Toshiba Corp | Ｘ線源及びｘ線源の製造方法 |
| CN113707528A (zh) * | 2020-05-22 | 2021-11-26 | 江苏鲁汶仪器有限公司 | 一种离子源挡片、离子刻蚀机及其使用方法 |
| US20220230835A1 (en) * | 2019-05-21 | 2022-07-21 | Hitachi High-Tech Corporation | Electron Gun and Charged Particle Beam Device Equipped With Electron Gun |
| CN117690773A (zh) * | 2023-12-12 | 2024-03-12 | 北京北方华创微电子装备有限公司 | 电子束发生器及离子束刻蚀设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003066199A (ja) * | 2001-08-29 | 2003-03-05 | Nissin High Voltage Co Ltd | 電子源 |
| JP2011065968A (ja) * | 2009-09-18 | 2011-03-31 | Ulvac Japan Ltd | イオンビーム照射装置 |
| JP2011216303A (ja) * | 2010-03-31 | 2011-10-27 | Toshiba Corp | Ｘ線源及びｘ線源の製造方法 |
| US20220230835A1 (en) * | 2019-05-21 | 2022-07-21 | Hitachi High-Tech Corporation | Electron Gun and Charged Particle Beam Device Equipped With Electron Gun |
| CN113707528A (zh) * | 2020-05-22 | 2021-11-26 | 江苏鲁汶仪器有限公司 | 一种离子源挡片、离子刻蚀机及其使用方法 |
| CN117690773A (zh) * | 2023-12-12 | 2024-03-12 | 北京北方华创微电子装备有限公司 | 电子束发生器及离子束刻蚀设备 |
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