WO2025041283A1 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- WO2025041283A1 WO2025041283A1 PCT/JP2023/030227 JP2023030227W WO2025041283A1 WO 2025041283 A1 WO2025041283 A1 WO 2025041283A1 JP 2023030227 W JP2023030227 W JP 2023030227W WO 2025041283 A1 WO2025041283 A1 WO 2025041283A1
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- Prior art keywords
- chamber
- plating
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- port
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
Definitions
- This application relates to a substrate processing apparatus.
- Substrate processing apparatuses are known for performing various processes on the surface of a substrate (e.g., a semiconductor wafer).
- Substrate processing apparatuses include, for example, electrolytic plating apparatuses for forming a conductive film on the surface of a substrate to be plated, and chemical mechanical polishing (CMP) apparatuses for polishing and planarizing the surface of a substrate to be polished.
- CMP chemical mechanical polishing
- the substrate processing apparatus disclosed in Patent Document 1 includes a transport device for transporting substrates, a substrate processing rack disposed to the side of the transport device, and a fan disposed above the transport device and the substrate processing rack.
- This substrate processing apparatus is configured to clean the inside of the apparatus by blowing air vertically downward from the fan to create a downflow inside the apparatus.
- Patent Document 1 is configured to create a downflow throughout the entire interior of the apparatus, so in order to properly clean the interior of the apparatus, it is necessary to blow out a large amount of air from the fan. This requires a large number of fans and large fans, which undesirably increases the overall size of the apparatus.
- one of the objectives of this application is to realize a substrate processing apparatus that can efficiently clean the inside of the apparatus.
- a substrate processing apparatus includes a substrate transport chamber that houses a transport device for transporting a substrate, a fan module arranged above the substrate transport chamber and configured to supply gas to the substrate transport chamber, a plating chamber arranged to the side of the substrate transport chamber that houses a plating module for plating a substrate, an exhaust chamber arranged below the substrate transport chamber, a partition member that separates the substrate transport chamber from the exhaust chamber, and a bypass flow path that communicates between the substrate transport chamber and the exhaust chamber by bypassing the partition member, the plating chamber having a supply port for supplying the gas supplied to the substrate transport chamber by the fan module to the plating chamber and an exhaust port for discharging the gas supplied to the plating chamber to the outside, and the exhaust chamber having an exhaust port for discharging the gas supplied to the exhaust chamber via the bypass flow path to the outside.
- FIG. 1 is a perspective view showing the overall configuration of a plating apparatus according to one embodiment.
- FIG. 2A is a plan view showing the overall configuration of a plating apparatus according to one embodiment.
- FIG. 2B is a cross-sectional view taken along line BB in FIG. 2A.
- FIG. 2C is a cross-sectional view taken along line CC of FIG. 2B.
- FIG. 3 is a cross-sectional view of a modified plating apparatus.
- FIG. 4 is a cross-sectional view of a modified plating apparatus.
- FIG. 5 is a cross-sectional view of a modified plating apparatus.
- a plating apparatus will be described as an example of a substrate processing apparatus, but the present embodiment is not limited to this and can also be applied to a chemical mechanical polishing (CMP) apparatus for polishing and planarizing the polished surface of a substrate.
- CMP chemical mechanical polishing
- Fig. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment.
- Fig. 2A is a plan view showing the overall configuration of the plating apparatus of this embodiment.
- the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a plating module 400, a spin rinse dryer 600, a transfer device 700, and a control module 800.
- the load port 100 is a module for loading substrates stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 and for unloading substrates from the plating apparatus 1000 to the cassette.
- a cassette such as a FOUP (not shown)
- four load ports 100 are arranged horizontally, but the number and arrangement of the load ports 100 is optional.
- the transport robot (dry robot) 110 is a robot for transporting substrates, and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600.
- the aligner 120 is a module for aligning the position of the orientation flat, notch, etc. of the substrate to a predetermined direction.
- one aligner 120 is arranged, but the number and arrangement of the aligners 120 are arbitrary.
- the pre-wet module 200 replaces the air inside the pattern formed on the substrate surface with the treatment liquid by wetting the surface to be plated of the substrate before plating processing with a treatment liquid such as pure water or degassed water.
- the pre-wet module 200 is configured to perform a pre-wet processing that replaces the treatment liquid inside the pattern with plating liquid during plating, making it easier to supply plating liquid inside the pattern.
- two pre-wet modules 200 are arranged vertically, but the number and arrangement of the pre-wet modules 200 are arbitrary.
- the plating modules 400 are modules for performing plating processing on substrates.
- the plating modules 400 include eight plating modules 400A arranged on one side of the traveling path of the transport device 700, and eight plating modules 400B arranged on the opposite side of the traveling path of the transport device 700.
- a total of 16 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are optional.
- the spin rinse dryer 600 is a form of drying module for drying a substrate after plating by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged vertically, but the number and arrangement of the spin rinse dryers is optional.
- the transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000.
- the control module 800 is configured to control the multiple modules of the plating apparatus 1000, and can be configured, for example, from a general computer or a dedicated computer equipped with an input/output interface with an operator.
- a substrate stored in a cassette is loaded into the load port 100.
- the transfer robot 110 removes the substrate from the cassette in the load port 100 and transfers the substrate to the aligner 120.
- the aligner 120 aligns the positions of the substrate's orientation flat, notch, etc. to a predetermined direction.
- the transfer robot 110 passes the substrate, whose direction has been aligned by the aligner 120, to the pre-wet module 200.
- the pre-wet module 200 performs a pre-wet process on the substrate.
- the transport device 700 transports the substrate that has been subjected to the pre-wet process to the plating module 400.
- the plating module 400 performs a plating process on the substrate.
- the transport device 700 transports the plated substrate to another plating module 400 for composite plating, or to the spin rinse dryer 600.
- the spin rinse dryer 600 dries the substrate.
- the transport robot 110 receives the substrate from the spin rinse dryer 600 and transports the dried substrate to a cassette on the load port 100. Finally, the cassette containing the substrate is removed from the load port 100.
- FIG. 2B is a cross-sectional view taken along line B-B in FIG. 2A.
- FIG. 2C is a cross-sectional view taken along line C-C in FIG. 2B.
- the travel direction of the transport device 700 is the X direction
- the travel direction of the transport robot 110 is the Y direction
- the vertical direction is the Z direction.
- the plating apparatus 1000 includes a substrate transport chamber 701 extending in the X direction.
- the transport device 700 is housed in the substrate transport chamber 701.
- the plating apparatus 1000 includes a plurality of plating chambers 401 (16 in this embodiment) arranged on both sides of the substrate transport chamber 701 in the X direction.
- Each plating module 400 is arranged in each plating chamber 401. Note that, in this embodiment, an example is shown in which the plating chambers 401 are arranged on both sides of the substrate transport chamber 701 in the X direction, but this is not limited thereto, and the plating chambers 401 may be arranged only on one side of the substrate transport chamber 701 in the X direction.
- the transfer device 700 includes a mounting member 710-1 fixed to a side surface of the plating chamber 401, a lift rail 716 attached to the mounting member 710-1, and a transfer robot 718 having a hand for holding a substrate.
- the mounting member 710-1 is a member for mounting the lift rail 716 and the transport robot 718 to the side of the plating chamber 401.
- the mounting member 710-1 includes multiple (three in this embodiment) running rails 714 (714-1 to 714-3) that are fixed to the side of the plating chamber 401 and extend in the running direction (X direction). Note that in this embodiment, an example is shown in which three running rails 714 are provided to increase the rigidity of the mounting member 710-1, but this is not limiting, and two running rails (running rails 714-1 and 714-2, or running rails 714-1 and 714-3) may be provided.
- the lifting rail 716 extends in the lifting direction across the side surfaces of the multiple running rails 714, and is configured to be movable along the side surfaces of the multiple running rails 714.
- the lifting rail 716 is configured to move along the running rails 714 by a driving member (e.g., a motor) not shown.
- the transport robot 718 is a member that can be raised and lowered along the lift rail 716. Specifically, the transport robot 718 is configured to be able to be raised and lowered along the lift rail 716 by a driving member (e.g. a motor) not shown.
- the transport device 700 can transport substrates in the X and Z directions by moving the lift rail 716 in the running direction and moving the transport robot 718 in the lift direction. This allows the transport device 700 to transport the substrate in front of the substrate loading/unloading port of the processing module to which the substrate is to be transported.
- the transport robot 718 is configured to be able to rotate the hand around the lift rail 716 in a horizontal plane. As a result, after the substrate is transported in front of the substrate loading/unloading port, the transport robot 718 can transport the substrate into the processing module via the mounting member 710-1 by rotating the hand.
- the transport robot 718 is also configured to be able to invert the substrate held horizontally. As a result, the transport robot 718 can, for example, invert the substrate that has been plated with the surface to be plated facing downwards, and transport it to the spin rinse dryer 600 with the surface to be plated facing upwards.
- the plating apparatus 1000 includes a fan filter unit 408 disposed above the substrate transfer chamber 701.
- the fan filter unit 408 is an example of a fan module configured to supply gas to the substrate transfer chamber 701.
- the plating chamber 401 has a supply port 404 for supplying the gas supplied to the substrate transport chamber 701 by the fan filter unit 408 to the plating chamber 401, and an exhaust port 405 for exhausting the gas supplied to the plating chamber 401 to the outside.
- the supply port 404 may be formed of a hole or slit formed in the side wall of the plating chamber 401, or may be shared with the substrate loading/unloading port. That is, a substrate loading/unloading port for transferring the substrate between the plating module 400 and the transport device 700 is formed in the side wall of the plating chamber 401.
- the supply port 404 may be formed of a plurality of holes or slits formed in a plate member arranged at the substrate loading/unloading port.
- the exhaust port 405 may be formed of a hole or slit formed in the ceiling wall of each plating chamber 401.
- the exhaust port 405 is connected to the exhaust system of the facility in which the plating apparatus 1000 is installed.
- the plating apparatus 1000 includes an exhaust chamber 702 disposed below the substrate transfer chamber 701, and a partition member 720 that separates the substrate transfer chamber 701 from the exhaust chamber 702.
- the partition member 720 is a plate-shaped member disposed between the substrate transfer chamber 701 and the exhaust chamber 702.
- the partition member 720 may be any member that can block the flow of gas between the substrate transfer chamber 701 and the exhaust chamber 702.
- the plating apparatus 1000 includes a process chamber 501 disposed below the plating chamber 401.
- the process chamber 501 houses a reservoir tank 510 that stores the plating solution used in the plating module 400.
- the process chamber 501 has a first bypass port 503 that communicates with the substrate transfer chamber 701, and a second bypass port 505 that communicates with the exhaust chamber 702.
- the first bypass port 503 is formed to communicate the bottom of the side wall of the substrate transfer chamber 701 with the process chamber 501.
- the plating apparatus 1000 is provided with a bypass flow path 730 that connects the substrate transfer chamber 701 and the exhaust chamber 702 by bypassing the partition member 720.
- the bypass flow path 730 is formed by the first bypass port 503, the second bypass port 505, and the space within the process chamber 501.
- the exhaust chamber 702 has an exhaust port 703 for discharging the gas supplied to the exhaust chamber 702 via the bypass flow path 730 to the outside.
- the exhaust port 703 can be formed by a plurality of slits formed in the bottom wall of the exhaust chamber 702.
- the exhaust port 703 is connected to the exhaust system of the facility in which the plating apparatus 1000 is installed.
- the substrate processing apparatus that can efficiently clean the inside of the apparatus. That is, by supplying gas from the fan filter unit 408 to the substrate transfer chamber 701, a downflow of clean air can be formed in the substrate transfer chamber 701, so that particles and the like in the substrate transfer chamber 701 can be caused to flow toward the bottom surface of the substrate transfer chamber 701.
- a partition member 720 is provided on the bottom surface of the substrate transfer chamber 701, so that flow resistance is generated against the downflow. Therefore, the clean air supplied to the substrate transfer chamber 701 is more likely to flow into the plating chamber 401 via the supply port 404.
- the clean air supplied to the plating chamber 401 can exhaust particles and plating solution mist present in the plating chamber 401 from the exhaust port 405.
- the substrate transfer chamber 701 is at a positive pressure relative to the plating chamber 401, so that particles and plating solution mist in the plating chamber 401 can be prevented from flowing into the substrate transfer chamber 701 and contaminating the processed substrate.
- the plating apparatus 1000 also includes a bypass flow path 730 that connects the substrate transfer chamber 701 and the exhaust chamber 702, so that particles that flow toward the bottom of the substrate transfer chamber 701 can be sent to the exhaust chamber 702 via the bypass flow path 730 and discharged from the exhaust port 703.
- the first bypass port 503 is formed to connect the bottom of the side wall of the substrate transfer chamber 701 to the process chamber 501, so that particles that are flowed downward by the downflow and then have their direction changed by the partition member 720 can be smoothly discharged from the first bypass port 503 (bypass flow path 730).
- the plating apparatus 1000 of this embodiment forms a bypass flow path 730 by utilizing the space within the process chamber 501. Therefore, not only particles generated within the process chamber 501, but even if plating solution mist is generated within the process chamber 501 from the reservoir tank 510 system, these can be sent to the exhaust chamber 702 via the bypass flow path 730 and exhausted from the exhaust port 703. As described above, according to the plating apparatus 1000 of this embodiment, the inside of the plating apparatus 1000 can be efficiently and appropriately cleaned without increasing the number or size of the fan filter units 408.
- FIG. 3 is a cross-sectional view of a modified plating device. As shown in FIG. 3, the plating device 1000 may have plating modules 400 arranged in a single tier, one above the other.
- the vertical size of the process chamber 501 becomes relatively large, but it is preferable that the first bypass port 503 is formed so as to communicate the bottom of the side wall of the substrate transfer chamber 701 with the process chamber 501. This is to enable particles that are swept downward by the downflow of the substrate transfer chamber 701 and then change direction by the partition member 720 to be smoothly discharged from the first bypass port 503 (bypass flow path 730).
- FIG. 4 is a cross-sectional view of a modified plating apparatus.
- the plating module 400 includes a plating tank 410 that contains a plating solution, and a substrate holder 440 that holds the substrate Wf with the surface to be plated facing downward.
- the discharge port 405 is preferably provided on the side wall of the plating chamber 401 at a position higher than the plating tank 410 and lower than the height position of the substrate holder 440 when the substrate Wf is transferred between the transfer device 700 (transfer robot 718).
- the mist of plating solution generated from the plating tank 410 can be quickly discharged from the outlet 405. As a result, it is possible to prevent the mist of plating solution from causing rust or other problems on the substrate holder 440 and other mechanical parts of the plating module 400.
- a common exhaust port 703 is formed in the bottom wall of the exhaust chamber 702 for the 16 plating modules 400, but this is not limiting.
- Fig. 5 is a cross-sectional view of a modified plating apparatus. As shown in Fig. 5, multiple exhaust ports 703 may be provided separately for every four plating modules 400. By providing the exhaust ports 703 separately, the exhaust systems can be separated, so that it is possible to prevent particles and the like from mixing with each other in each exhaust system, and it is also possible to control the exhaust of each system independently.
- the present application discloses a substrate processing apparatus including a substrate transport chamber that houses a transport device for transporting a substrate, a fan module arranged above the substrate transport chamber and configured to supply gas to the substrate transport chamber, a plating chamber arranged to the side of the substrate transport chamber that houses a plating module for plating a substrate, an exhaust chamber arranged below the substrate transport chamber, a partition member that separates the substrate transport chamber from the exhaust chamber, and a bypass flow path that communicates between the substrate transport chamber and the exhaust chamber by bypassing the partition member, the plating chamber having a supply port for supplying the gas supplied to the substrate transport chamber by the fan module to the plating chamber and an exhaust port for discharging the gas supplied to the plating chamber to the outside, and the exhaust chamber having an exhaust port for discharging the gas supplied to the exhaust chamber via the bypass flow path to the outside.
- the present application discloses a substrate processing apparatus in which the exhaust outlet is provided in the ceiling wall of the plating chamber.
- the present application discloses, as one embodiment, a substrate processing apparatus in which the plating module includes a plating tank that contains a plating solution and a substrate holder that holds a substrate with the surface to be plated facing downward, and the discharge outlet is provided at a position that is higher than the plating tank and lower than the height position of the substrate holder when the substrate is transferred between the substrate processing apparatus and the transfer apparatus.
- the plating module includes a plating tank that contains a plating solution and a substrate holder that holds a substrate with the surface to be plated facing downward, and the discharge outlet is provided at a position that is higher than the plating tank and lower than the height position of the substrate holder when the substrate is transferred between the substrate processing apparatus and the transfer apparatus.
- the present application discloses a substrate processing apparatus further including a process chamber disposed below the plating chamber and housing a reservoir tank for storing a plating solution used in the plating module, the process chamber having a first bypass port communicating with the substrate transfer chamber and a second bypass port communicating with the exhaust chamber, and the bypass flow path being formed by the first bypass port, the second bypass port, and the space within the process chamber.
- the present application discloses a substrate processing apparatus in which the plating chambers are disposed on either side of the substrate transport chamber in the traveling direction of the transport device.
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Abstract
Description
図1は、本実施形態のめっき装置の全体構成を示す斜視図である。図2Aは、本実施形態のめっき装置の全体構成を示す平面図である。図1、2Aに示すように、めっき装置1000は、ロードポート100、搬送ロボット110、アライナ120、プリウェットモジュール200、めっきモジュール400、スピンリンスドライヤ600、搬送装置700、および、制御モジュール800を備える。
次に、搬送装置700の詳細を説明する。図2に示すように、搬送装置700は、めっき室401の側面に固定される取り付け部材710-1と、取り付け部材710-1に取り付けられた昇降レール716と、基板を保持するためのハンドを有する搬送ロボット718と、を備える。
図2B、図2Cに示すように、めっき装置1000は、基板搬送室701の上方に配置されたファンフィルタユニット408を備える。ファンフィルタユニット408は、基板搬送室701に対して気体を供給するように構成されたファンモジュールの一例である。
401 めっき室
404 供給口
405 排出口
408 ファンフィルタユニット
410 めっき槽
440 基板ホルダ
501 プロセス室
503 第1の迂回口
505 第2の迂回口
510 リザーバタンク
700 搬送装置
701 基板搬送室
702 排気室
703 排気口
720 仕切り部材
730 迂回流路
1000 めっき装置
Wf 基板
Claims (5)
- 基板を搬送するための搬送装置を収容する基板搬送室と、
前記基板搬送室の上方に配置され、前記基板搬送室に対して気体を供給するように構成されたファンモジュールと、
前記基板搬送室の側方に配置され、基板に対するめっき処理を行うためのめっきモジュールを収容するめっき室と、
前記基板搬送室の下方に配置された排気室と、
前記基板搬送室と前記排気室との間を仕切る仕切り部材と、
前記基板搬送室と前記排気室とを前記仕切り部材を迂回して連通する迂回流路と、
を含み、
前記めっき室は、前記ファンモジュールによって前記基板搬送室へ供給された気体を前記めっき室へ供給するための供給口、および、前記めっき室へ供給された気体を外部へ排出するための排出口を有し、
前記排気室は、前記迂回流路を介して前記排気室へ供給された気体を外部へ排出するための排気口を有する、
基板処理装置。 - 前記排出口は、前記めっき室の天壁に設けられる、
請求項1に記載の基板処理装置。 - 前記めっきモジュールは、めっき液を収容するめっき槽、および、被めっき面を下方に向けた状態で基板を保持する基板ホルダを含み、
前記排出口は、前記めっき槽より高く、かつ、前記搬送装置との間で基板を受け渡しする際の前記基板ホルダの高さ位置より低い位置に設けられる、
請求項1に記載の基板処理装置。 - 前記めっき室の下方に配置され、前記めっきモジュールで使用されるめっき液を貯蔵するリザーバタンクを収容するプロセス室をさらに含み、
前記プロセス室は、前記基板搬送室と連通する第1の迂回口と、前記排気室と連通する第2の迂回口と、を有し、
前記迂回流路は、前記第1の迂回口、前記第2の迂回口、および前記プロセス室内の空間によって形成される、
請求項1から3のいずれか一項に記載の基板処理装置。 - 前記めっき室は、前記基板搬送室の前記搬送装置の走行方向に対する両側方にそれぞれ配置される、
請求項1から3のいずれか一項に記載の基板処理装置。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023576382A JP7458564B1 (ja) | 2023-08-23 | 2023-08-23 | 基板処理装置 |
| CN202380021794.7A CN118843721B (zh) | 2023-08-23 | 2023-08-23 | 基板处理装置 |
| PCT/JP2023/030227 WO2025041283A1 (ja) | 2023-08-23 | 2023-08-23 | 基板処理装置 |
| KR1020247021774A KR20250030432A (ko) | 2023-08-23 | 2023-08-23 | 기판 처리 장치 |
Applications Claiming Priority (1)
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| PCT/JP2023/030227 WO2025041283A1 (ja) | 2023-08-23 | 2023-08-23 | 基板処理装置 |
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| JP2002285343A (ja) * | 2000-12-11 | 2002-10-03 | Ebara Corp | 無電解めっき装置 |
| JP7326647B1 (ja) * | 2022-12-07 | 2023-08-15 | 株式会社荏原製作所 | 搬送装置および基板処理装置 |
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| JP3830272B2 (ja) * | 1998-03-05 | 2006-10-04 | 株式会社荏原製作所 | 基板のめっき装置 |
| JP2001316888A (ja) * | 2000-05-02 | 2001-11-16 | Tokyo Electron Ltd | 半導体基板のメッキ処理システム |
| US7798764B2 (en) | 2005-12-22 | 2010-09-21 | Applied Materials, Inc. | Substrate processing sequence in a cartesian robot cluster tool |
| JP6841920B2 (ja) * | 2017-09-01 | 2021-03-10 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
| JP7430677B2 (ja) * | 2021-09-21 | 2024-02-13 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002285343A (ja) * | 2000-12-11 | 2002-10-03 | Ebara Corp | 無電解めっき装置 |
| JP7326647B1 (ja) * | 2022-12-07 | 2023-08-15 | 株式会社荏原製作所 | 搬送装置および基板処理装置 |
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| KR20250030432A (ko) | 2025-03-05 |
| JPWO2025041283A1 (ja) | 2025-02-27 |
| CN118843721B (zh) | 2025-10-31 |
| JP7458564B1 (ja) | 2024-03-29 |
| CN118843721A (zh) | 2024-10-25 |
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