WO2025028242A1 - コンデンサ内蔵基板 - Google Patents

コンデンサ内蔵基板 Download PDF

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Publication number
WO2025028242A1
WO2025028242A1 PCT/JP2024/025509 JP2024025509W WO2025028242A1 WO 2025028242 A1 WO2025028242 A1 WO 2025028242A1 JP 2024025509 W JP2024025509 W JP 2024025509W WO 2025028242 A1 WO2025028242 A1 WO 2025028242A1
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WIPO (PCT)
Prior art keywords
substrate
capacitor
hole
conductor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/025509
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English (en)
French (fr)
Japanese (ja)
Inventor
章友 ▲高▼橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2024565264A priority Critical patent/JP7772256B2/ja
Priority to CN202480004339.0A priority patent/CN120035873A/zh
Publication of WO2025028242A1 publication Critical patent/WO2025028242A1/ja
Priority to US19/072,257 priority patent/US20250201486A1/en
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H01G9/012—Terminals specially adapted for solid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
    • H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/08—Housing; Encapsulation
    • H01G9/10—Sealing, e.g. of lead-in wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits

Definitions

  • the present invention relates to a substrate with a built-in capacitor.
  • Patent document 1 discloses a module including a capacitor layer including at least one capacitor portion forming a capacitor, a connection terminal, and a through-hole conductor formed to penetrate the capacitor portion in the thickness direction of the capacitor layer.
  • the through-hole conductor includes a first through-hole conductor formed on at least the inner wall surface of a first through hole penetrating the capacitor portion in the thickness direction.
  • the first through-hole conductor is electrically connected to the anode of the capacitor portion.
  • the capacitor portion includes an anode plate made of metal.
  • the first through-hole conductor is connected to an end face of the anode plate.
  • the module further includes an anode connection layer provided between the first through-hole conductor and the end face of the anode plate.
  • the first through-hole conductor is connected to the end face of the anode plate via the anode connection layer.
  • the first through-hole conductor in the portion where the anode connection layer is present rises toward the inside of the first through-hole compared to the first through-hole conductor in the portion where the anode connection layer is not present.
  • Patent document 1 describes, as one embodiment of a module, a capacitor-embedded substrate in which a capacitor element is embedded in a wiring substrate.
  • Patent Document 1 In order to manufacture such a capacitor-embedded substrate, Patent Document 1 (FIGS. 14A and 14B) describes how through holes 263 and 265 are formed by drilling or laser processing in the areas where through-hole conductors 262 and 264 are to be formed, and then the inner surfaces of through holes 263 and 265 are metallized by electroless Cu plating or the like to form through-hole conductors 262 and 264.
  • the anode plate 231 and the conductive portion 220 are simultaneously exposed on the inner surface of the through hole 263 for the through-hole conductor 262.
  • the anode plate 231 is generally made of a valve metal such as Al (aluminum) while the conductive portion 220 is made of a metal such as Cu (copper), it is difficult to form the through-hole conductor 262 using a general method such as plating on the surface of the through hole 263 where these different metals are exposed.
  • the present invention has been made to solve the above problems, and aims to provide a capacitor-embedded substrate that allows the capacitor through-hole anode conductor connected to the end face of the anode plate to be formed using standard techniques.
  • the capacitor-embedded substrate of the present invention comprises a capacitor element and a wiring substrate incorporating the capacitor element.
  • the capacitor element includes a capacitor portion and a sealing layer provided to cover at least one main surface of the capacitor portion.
  • the capacitor portion includes an anode plate having a porous portion on at least one main surface of a core portion, a dielectric layer provided on the surface of the porous portion, and a cathode layer provided on the surface of the dielectric layer.
  • At least one first capacitor through hole and at least one second capacitor through hole are provided so as to penetrate the capacitor element without penetrating the wiring substrate in the thickness direction of the anode plate.
  • a capacitor through anode conductor electrically connected to an end face of the anode plate is provided inside the first capacitor through hole.
  • a first substrate through hole is provided inside the first capacitor through hole and a second substrate through hole is provided inside the second capacitor through hole so as to penetrate the wiring substrate and the capacitor element in the thickness direction of the anode plate.
  • a substrate-penetrating anode conductor electrically connected to the anode plate is provided on the inner wall surface of the first substrate through hole.
  • a substrate-penetrating cathode conductor electrically connected to the cathode layer is provided on the inner wall surface of the second substrate through hole. The substrate-penetrating anode conductor is located inside the capacitor-penetrating anode conductor.
  • the present invention provides a capacitor-embedded substrate that allows the capacitor through-hole anode conductor connected to the end face of the anode plate to be formed using standard techniques.
  • FIG. 1 is a cross-sectional view showing a schematic example of a capacitor-embedded substrate according to a first embodiment of the present invention.
  • FIG. 2 is a plan view taken along line AA of the capacitor-embedded substrate shown in FIG. 3 is a plan view of the capacitor-embedded substrate taken along line BB of FIG. 4A to 4G are cross-sectional views that typically show one example of a method for producing a capacitor element having a capacitor-embedded anode conductor, among methods for producing a capacitor-embedded substrate that falls within the scope of the present invention.
  • 5A to 5C are cross-sectional views that typically show one example of a method for producing a capacitor-embedded substrate using a capacitor element having a capacitor-penetrating anode conductor.
  • 6A to 6D are cross-sectional views that typically show one example of a method for producing a capacitor element that does not have a capacitor through-hole anode conductor, among methods for producing a capacitor-embedded substrate that is outside the scope of the present invention.
  • 7A to 7C are cross-sectional views that typically show one example of a method for producing a capacitor-embedded substrate using a capacitor element that does not have a capacitor through-hole anode conductor.
  • FIG. 8 is a cross-sectional view illustrating an example of a capacitor-embedded substrate according to a second embodiment of the present invention.
  • FIG. 9 is a plan view taken along line AA of the capacitor-embedded substrate shown in FIG.
  • FIG. 10 is a plan view taken along line BB of the capacitor-embedded substrate shown in FIG.
  • FIG. 11 is a plan view showing an example of a capacitor-embedded substrate according to a third embodiment of the present invention.
  • FIG. 12 is a cross-sectional view illustrating an example of a capacitor-embedded substrate according to a fourth embodiment of the present invention.
  • FIG. 13 is a cross-sectional view illustrating an example of a capacitor-embedded substrate according to a fifth embodiment of the present invention.
  • capacitor-embedded substrate of the present invention will be described below. Note that the present invention is not limited to the following embodiments, and may be modified as appropriate without departing from the spirit of the present invention. In addition, a combination of multiple individual preferred configurations described in the following embodiments also constitutes the present invention.
  • terms indicating the relationship between elements are not expressions that only express a strict meaning, but are expressions that mean that they are substantially equivalent, for example, including differences of about a few percent.
  • “equivalent” is an expression that does not only mean that they are completely equivalent, but is an expression that means that they are substantially equivalent, for example, including differences of about a few percent.
  • Fig. 1 is a cross-sectional view showing an example of a capacitor-embedded substrate according to a first embodiment of the present invention.
  • Fig. 2 is a plan view taken along line AA of the capacitor-embedded substrate shown in Fig. 1.
  • Fig. 3 is a plan view taken along line BB of the capacitor-embedded substrate shown in Fig. 1.
  • the capacitor-embedded substrate 1 shown in FIG. 1 includes a capacitor element 100 and a wiring substrate 200 that incorporates the capacitor element 100.
  • the capacitor element 100 includes a capacitor section 10 and a sealing layer 20 provided to cover at least one of the main surfaces of the capacitor section 10.
  • the sealing layer 20 includes a first sealing layer 21 that covers the capacitor section 10 and a second sealing layer 22 that covers the first sealing layer 21.
  • one capacitor section 10 is disposed inside the sealing layer 20.
  • the number of capacitor sections 10 disposed inside the sealing layer 20 is not particularly limited, and may be one or more.
  • the capacitor section 10 includes an anode plate 11 having a porous section 11B on at least one main surface of a core section 11A, a dielectric layer 13 provided on the surface of the porous section 11B, and a cathode layer 12 provided on the surface of the dielectric layer 13.
  • the anode plate 11 has a porous section 11B on both main surfaces of the core section 11A, but it may have a porous section 11B on only one of the main surfaces of the core section 11A.
  • the cathode layer 12 includes, for example, a solid electrolyte layer provided on the surface of the dielectric layer 13. It is preferable that the cathode layer 12 further includes a conductor layer provided on the surface of the solid electrolyte layer.
  • the capacitor section 10 constitutes a solid electrolytic capacitor.
  • the sealing layer 20 may be composed of only one layer, or may be composed of two or more layers. When the sealing layer 20 is composed of two or more layers, the materials constituting each layer may be the same or different.
  • the sealing layer 20 is provided on both main surfaces of the capacitor section 10 that face each other in the thickness direction.
  • the sealing layer 20 protects the capacitor section 10.
  • the capacitor-embedded substrate 1 is provided with at least one first capacitor through hole 35A and at least one second capacitor through hole 35B so as to penetrate the capacitor element 100 without penetrating the wiring substrate 200 in the thickness direction of the anode plate 11 (the vertical direction in FIG. 1).
  • the first capacitor through hole 35A and the second capacitor through hole 35B are arranged apart from each other.
  • the planar shape of the first capacitor through hole 35A (e.g., cross-sectional shape perpendicular to the thickness direction) is not particularly limited and may be, for example, circular.
  • the planar shape of the second capacitor through hole 35B is not particularly limited and may be, for example, circular.
  • the first capacitor through hole 35A is preferably present within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the second capacitor through hole 35B is preferably present within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the number of first capacitor through holes 35A may be the same as the number of second capacitor through holes 35B, may be less than the number of second capacitor through holes 35B, or may be more than the number of second capacitor through holes 35B.
  • the diameter of the first capacitor through hole 35A may be equal to the diameter of the second capacitor through hole 35B, may be smaller than the diameter of the second capacitor through hole 35B, or may be larger than the diameter of the second capacitor through hole 35B.
  • the diameter of the through hole means the diameter when the planar shape is circular, and means the equivalent circular diameter when the planar shape is other than circular.
  • the diameter of the first capacitor through hole 35A may be constant or may vary in the thickness direction.
  • the diameter of the second capacitor through hole 35B may be constant or may vary in the thickness direction.
  • the diameters of the first capacitor through holes 35A may be the same, or some or all of them may be different.
  • the diameters of the second capacitor through holes 35B may be the same, or some or all of them may be different.
  • a capacitor through-hole anode conductor 30A is provided inside the first capacitor through-hole 35A and is electrically connected to the end face of the anode plate 11.
  • the capacitor through-hole anode conductor 30A is electrically connected to the anode plate 11 on the inner wall surface of the first capacitor through-hole 35A. Therefore, no insulating material such as the sealing layer 20 is filled between the capacitor through-hole anode conductor 30A and the end surface of the anode plate 11.
  • the core portion 11A and the porous portion 11B are exposed on the end face of the anode plate 11 that is electrically connected to the capacitor through-hole anode conductor 30A.
  • the porous portion 11B as well as the core portion 11A are electrically connected to the capacitor through-hole anode conductor 30A.
  • the capacitor through-hole anode conductor 30A is electrically connected to the anode plate 11 around the entire circumference of the first capacitor through-hole 35A, as shown in FIG. 2.
  • the capacitor through-hole anode conductor 30A may be electrically connected to the end surface of the anode plate 11 via an anode connection layer, or may be directly connected to the end surface of the anode plate 11.
  • first capacitor through holes 35A When multiple first capacitor through holes 35A are provided, some of the first capacitor through holes 35A may not have a capacitor through anode conductor 30A provided inside, but it is preferable that all of the first capacitor through holes 35A have a capacitor through anode conductor 30A provided inside.
  • the capacitor-embedded substrate 1 has a first substrate through-hole 45A on the inside of the first capacitor through-hole 35A so as to penetrate the wiring substrate 200 and the capacitor element 100 in the thickness direction of the anode plate 11, and a second substrate through-hole 45B on the inside of the second capacitor through-hole 35B.
  • the planar shape of the first substrate through hole 45A is not particularly limited and may be, for example, circular.
  • the planar shape of the second substrate through hole 45B is not particularly limited and may be, for example, circular.
  • first capacitor through holes 35A When multiple first capacitor through holes 35A are provided, first capacitor through holes 35A may be included that do not have a first board through hole 45A provided on the inside, but it is preferable that the first board through holes 45A are provided on the inside of all of the first capacitor through holes 35A.
  • second capacitor through holes 35B when multiple second capacitor through holes 35B are provided, second capacitor through holes 35B may be included that do not have a second board through hole 45B provided on the inside, but it is preferable that the second board through holes 45B are provided on the inside of all of the second capacitor through holes 35B.
  • the diameter of the first substrate through hole 45A is not particularly limited, so long as it is smaller than the diameter of the first capacitor through hole 35A.
  • the diameter of the second substrate through hole 45B is not particularly limited, so long as it is smaller than the diameter of the second capacitor through hole 35B.
  • the diameter of the first substrate through hole 45A may be equal to the diameter of the second substrate through hole 45B, may be smaller than the diameter of the second substrate through hole 45B, or may be larger than the diameter of the second substrate through hole 45B.
  • the diameter of the first substrate through hole 45A may be constant or may vary in the thickness direction.
  • the diameter of the second substrate through hole 45B may be constant or may vary in the thickness direction.
  • the diameters of the first substrate through holes 45A may be the same, or some or all of them may be different.
  • the diameters of the second board through holes 45B may be the same, or some or all of them may be different.
  • the inner wall surface of the first substrate through hole 45A is provided with a substrate through anode conductor 40A that is electrically connected to the anode plate 11.
  • the inner wall surface of the second substrate through hole 45B is provided with a substrate through cathode conductor 40B that is electrically connected to the cathode layer 12.
  • the substrate through-hole anode conductor 40A is located inside the capacitor through-hole anode conductor 30A, as shown in Figures 1 and 2.
  • the substrate through-hole anode conductor 40A is formed inside the capacitor through-hole anode conductor 30A, so that the metal constituting the anode plate 11 is not exposed on the inner surface of the first substrate through-hole 45A for forming the substrate through-hole anode conductor 40A. Therefore, the substrate through-hole anode conductor 40A can be easily formed using a common technique such as plating.
  • the metal constituting the anode plate 11 is not exposed on the inner surface of the first substrate-penetrating hole 45A for forming the substrate-penetrating anode conductor 40A. In this case, however, the area where the capacitor functions is reduced and the capacity is reduced, resulting in reduced capacitor performance. In contrast, by forming the substrate-penetrating anode conductor 40A inside the capacitor-penetrating anode conductor 30A, the area where the capacitor does not function is reduced, thereby preventing a decrease in capacitor performance.
  • the substrate-penetrating anode conductor 40A is provided around the entire inner wall surface of the first substrate-penetrating hole 45A.
  • the substrate-penetrating cathode conductor 40B is provided around the entire inner wall surface of the second substrate-penetrating hole 45B.
  • the diameter of the substrate-penetrating anode conductor 40A is preferably equal to the diameter of the substrate-penetrating cathode conductor 40B.
  • the diameter of the substrate-penetrating anode conductor 40A may be smaller than the diameter of the substrate-penetrating cathode conductor 40B, or may be larger than the diameter of the substrate-penetrating cathode conductor 40B.
  • the diameter of the through conductor means the diameter when the planar shape is circular, and means the equivalent circular diameter when the planar shape is other than circular.
  • the area of the substrate-penetrating anode conductor 40A is equal to the area of the substrate-penetrating cathode conductor 40B.
  • the area of the substrate-penetrating anode conductor 40A may be smaller than the area of the substrate-penetrating cathode conductor 40B, or may be larger than the area of the substrate-penetrating cathode conductor 40B.
  • the material constituting the substrate-penetrating anode conductor 40A may be the same as the material constituting the substrate-penetrating cathode conductor 40B, or it may be different.
  • the material constituting the capacitor through-hole anode conductor 30A may be the same as the material constituting the substrate through-hole anode conductor 40A, or it may be different.
  • an insulating material such as a sealing layer 20 is filled between the substrate through-hole anode conductor 40A and the capacitor through-hole anode conductor 30A.
  • a second sealing layer 22 is filled between the substrate through-hole anode conductor 40A and the capacitor through-hole anode conductor 30A.
  • an insulating material such as a sealing layer 20 is filled between the substrate-penetrating cathode conductor 40B and the end face of the anode plate 11.
  • a first sealing layer 21 is filled between the substrate-penetrating cathode conductor 40B and the end face of the anode plate 11.
  • the capacitor element 100 may further include an insulating mask layer 25 provided around the first capacitor through hole 35A on at least one main surface of the anode plate 11.
  • the insulating mask layer 25 provided around the first capacitor through hole 35A is preferably provided between the capacitor through anode conductor 30A and the cathode layer 12.
  • the capacitor element 100 may further include an insulating mask layer 25 provided around the second capacitor through-hole 35B on at least one of the main surfaces of the anode plate 11.
  • the insulating mask layer 25 provided around the second capacitor through-hole 35B is preferably provided between the insulating material (first sealing layer 21 in FIG. 1) filled between the substrate through-hole cathode conductor 40B and the capacitor section 10 and the cathode layer 12.
  • the capacitor section 10 may further include an insulating mask layer 25 provided on at least one main surface of the anode plate 11 so as to surround the periphery of the cathode layer 12.
  • an insulating mask layer 25 provided on at least one main surface of the anode plate 11 so as to surround the periphery of the cathode layer 12.
  • a first resin filling portion 48A filled with a resin material may be provided inside the substrate-penetrating anode conductor 40A.
  • the first resin filling portion 48A is provided in the space surrounded by the substrate-penetrating anode conductor 40A in the first substrate-penetrating hole 45A.
  • the first resin filling portion 48A may be a conductor or an insulator.
  • a second resin filling section 48B filled with a resin material may be provided inside the substrate through-hole cathode conductor 40B.
  • the second resin filling section 48B is provided in the space surrounded by the substrate through-hole cathode conductor 40B in the second substrate through-hole 45B.
  • the second resin filling section 48B may be a conductor or an insulator.
  • first wiring layers 51A and 51B are provided between the first sealing layer 21 and the second sealing layer 22, and second wiring layers 52A and 52B are provided on the surface of the second sealing layer 22.
  • the first wiring layers 51A and 51B are provided on both the upper and lower sides of the capacitor element 100, but they may be provided on only one of them.
  • the second wiring layers 52A and 52B are provided on both the upper and lower sides of the capacitor element 100, but they may be provided on only one of them.
  • the wiring substrate 200 includes, for example, a sealing insulation layer 50.
  • the wiring substrate 200 includes one sealing insulation layer 50.
  • the sealing insulation layer 50 may be composed of only one layer, or may be composed of two or more layers. When the sealing insulation layer 50 is composed of two or more layers, the materials constituting each layer may be the same or different.
  • the sealing insulation layer 50 may be composed of the same material as the sealing layer 20, or may be composed of a different material from the sealing layer 20.
  • the sealing insulation layer 50 is provided on both main surfaces of the capacitor element 100 that face each other in the thickness direction. As shown in FIG. 1, it is preferable that in addition to both main surfaces of the capacitor element 100, at least a portion of the side surface of the capacitor element 100 is also covered with the sealing insulation layer 50.
  • third wiring layers 53A and 53B are provided on the surface of the sealing insulation layer 50.
  • the third wiring layers 53A and 53B are provided on both the upper and lower sides of the capacitor element 100, but they may be provided on only one side.
  • the first wiring layer 51A is electrically connected to the capacitor through-hole anode conductor 30A.
  • the first wiring layer 51A is connected to the end of the capacitor through-hole anode conductor 30A.
  • the second wiring layer 52A is electrically connected to the first wiring layer 51A.
  • the second wiring layer 52A is connected to the first wiring layer 51A, for example, via an anode via conductor 55A that penetrates the second sealing layer 22.
  • the second wiring layer 52A is electrically connected to the substrate-penetrating anode conductor 40A.
  • the substrate-penetrating anode conductor 40A is connected to the end of the second wiring layer 52A.
  • the third wiring layer 53A is electrically connected to the substrate-penetrating anode conductor 40A.
  • the third wiring layer 53A is connected to the end of the substrate-penetrating anode conductor 40A.
  • the third wiring layer 53A is electrically connected to the anode plate 11 via the substrate through-hole anode conductor 40A, the second wiring layer 52A, the anode via conductor 55A, the first wiring layer 51A, and the capacitor through-hole anode conductor 30A.
  • the first wiring layer 51B is electrically connected to the cathode layer 12.
  • the first wiring layer 51B is connected to the cathode layer 12, for example, via a cathode via conductor 55B that penetrates the first sealing layer 21.
  • the first wiring layer 51B is electrically connected to the substrate through-hole cathode conductor 40B.
  • the substrate through-hole cathode conductor 40B is connected to the end of the first wiring layer 51B.
  • the second wiring layer 52B is electrically connected to the substrate through-hole cathode conductor 40B.
  • the substrate through-hole cathode conductor 40B is connected to the end of the second wiring layer 52B.
  • the second wiring layer 52B may be connected to the first wiring layer 51B via a cathode via conductor that penetrates the second sealing layer 22.
  • the third wiring layer 53B is electrically connected to the substrate through-hole cathode conductor 40B.
  • the third wiring layer 53B is connected to the end of the substrate through-hole cathode conductor 40B.
  • the third wiring layer 53B is electrically connected to the cathode layer 12 via the substrate through-hole cathode conductor 40B, the second wiring layer 52B, the first wiring layer 51B, and the cathode via conductor 55B.
  • the capacitor-embedded substrate 1 shown in Figure 1 is manufactured, for example, by the following method.
  • Figures 4A to 4G are cross-sectional views that show a schematic example of a method for producing a capacitor element having a capacitor-through anode conductor, among the methods for producing a capacitor-embedded substrate that fall within the scope of the present invention.
  • the capacitor section 10 is prepared.
  • anodizing is performed on an anode plate 11 having a porous portion 11B on at least one main surface of a core portion 11A to form a dielectric layer 13 on the surface of the porous portion 11B.
  • a chemical foil may be prepared as the anode plate 11 with a dielectric layer 13 provided on the surface of the porous portion 11B.
  • an insulating mask layer 25 is formed in an area including the portion where the first capacitor through hole 35A (see FIG. 4D) and the second capacitor through hole 35B (see FIG. 4B) are to be formed.
  • an insulating resin is applied to the surface of the dielectric layer 13 by a method such as screen printing or dispenser application, thereby forming the insulating mask layer 25 in a predetermined area.
  • the cathode layer 12 is formed on the surface of the dielectric layer 13 in an area where the insulating mask layer 25 is not provided.
  • a solid electrolyte layer and a conductor layer are formed in this order on the surface of the dielectric layer 13 to form the cathode layer 12. In this manner, the capacitor section 10 is obtained.
  • a second capacitor through hole 35B is formed to penetrate the capacitor portion 10.
  • a second capacitor through-hole 35B is formed that penetrates the insulating mask layer 25 and the anode plate 11 in the thickness direction.
  • both main surfaces of the capacitor portion 10 are covered with the first sealing layer 21. As shown in FIG. 4C, it is preferable that the first sealing layer 21 is filled into the second capacitor through-hole 35B.
  • a first capacitor through hole 35A is formed to penetrate the capacitor section 10 and the first sealing layer 21.
  • a first capacitor through-hole 35A is formed that penetrates the first sealing layer 21, the insulating mask layer 25, and the anode plate 11 in the thickness direction.
  • a capacitor through-hole anode conductor 30A is formed on the inner wall surface of the first capacitor through-hole 35A.
  • the capacitor through-hole anode conductor 30A is formed by metallizing the inner wall surface of the first capacitor through-hole 35A with a low-resistance metal such as copper, gold, or silver.
  • a low-resistance metal such as copper, gold, or silver.
  • the inner wall surface of the first capacitor through-hole 35A may be metallized with electroless copper plating, electrolytic copper plating, or the like to facilitate processing.
  • the method of forming the capacitor through-hole anode conductor 30A may be a method of filling the first capacitor through-hole 35A with a metal, a composite material of metal and resin, or the like, in addition to a method of metallizing the inner wall surface of the first capacitor through-hole 35A.
  • cathode via conductor 55B, first wiring layer 51A, and first wiring layer 51B are formed in a predetermined area.
  • the cathode via conductor 55B is formed, for example, by forming a through hole that penetrates the first sealing layer 21 in the thickness direction, and then plating the inner wall surface of the through hole with a low-resistance metal such as copper, gold, or silver, or by filling it with a conductive paste and then performing a heat treatment.
  • a low-resistance metal such as copper, gold, or silver
  • the first wiring layer 51A and the first wiring layer 51B are formed, for example, by performing a plating process on the surface of the first sealing layer 21.
  • the first sealing layer 21, the first wiring layer 51A, and the first wiring layer 51B are covered with the second sealing layer 22 to form the sealing layer 20.
  • the second sealing layer 22 is filled into the first capacitor through hole 35A. Then, the anode via conductor 55A, the second wiring layer 52A, and the second wiring layer 52B are formed in the specified regions.
  • the anode via conductor 55A is formed, for example, by forming a through hole that penetrates the second sealing layer 22 in the thickness direction, and then plating the inner wall surface of the through hole with a low-resistance metal such as copper, gold, or silver, or by filling it with a conductive paste and then performing a heat treatment.
  • a low-resistance metal such as copper, gold, or silver
  • the second wiring layer 52A and the second wiring layer 52B are formed, for example, by performing a plating process on the surface of the second sealing layer 22.
  • the capacitor element 100 is thus produced.
  • Figures 5A to 5C are cross-sectional views that show a schematic example of a method for producing a capacitor-embedded substrate using a capacitor element having a capacitor-penetrating anode conductor.
  • the capacitor element 100 is covered with a sealing insulating layer 50.
  • the sealing insulation layer 50 is formed by covering the capacitor element 100 with a sealing material having a metal foil such as copper foil on its surface.
  • a first substrate through hole 45A and a second substrate through hole 45B are formed to penetrate the sealing insulation layer 50, the sealing layer 20, and the capacitor section 10.
  • the first substrate through hole 45A is formed by performing processing such as drilling and laser processing on the inside of the first capacitor through hole 35A. At this time, by making the diameter of the first substrate through hole 45A smaller than the diameter of the first capacitor through hole 35A, an insulating material such as the second sealing layer 22 is created between the inner wall surface of the first capacitor through hole 35A and the inner wall surface of the first substrate through hole 45A in the surface direction.
  • the second substrate through hole 45B is formed by performing drilling, laser processing, or other processing on the inside of the second capacitor through hole 35B. At this time, by making the diameter of the second substrate through hole 45B smaller than the diameter of the second capacitor through hole 35B, an insulating material such as the first sealing layer 21 is created between the inner wall surface of the second capacitor through hole 35B and the inner wall surface of the second substrate through hole 45B in the surface direction.
  • the anode plate 11 is not exposed on the inner surface of the first substrate through hole 45A and the inner surface of the second substrate through hole 45B, and only the metal constituting the wiring layers such as the second wiring layer 52A is exposed.
  • a substrate-penetrating anode conductor 40A is formed on the inner wall surface of the first substrate-penetrating hole 45A, and a substrate-penetrating cathode conductor 40B is formed on the inner wall surface of the second substrate-penetrating hole 45B.
  • the inner wall surface of the first substrate through hole 45A is metallized with a low resistance metal such as copper, gold, or silver to form the substrate through anode conductor 40A.
  • a low resistance metal such as copper, gold, or silver
  • the inner wall surface of the first substrate through hole 45A is metallized with electroless copper plating, electrolytic copper plating, or the like to facilitate processing.
  • the method of filling the first substrate through hole 45A with a metal, a composite material of metal and resin, or the like may be used.
  • the method of forming the substrate through cathode conductor 40B is similar. The substrate through anode conductor 40A and the substrate through cathode conductor 40B may be formed simultaneously or separately.
  • first resin filling portion 48A and a second resin filling portion 48B it is preferable to form a third wiring layer 53A and a third wiring layer 53B.
  • a capacitor-embedded substrate 1 is produced in which the capacitor element 100 is embedded in the wiring substrate 200.
  • Figures 6A to 6D are cross-sectional views that show a schematic example of a method for producing a capacitor element that does not have a capacitor through-hole anode conductor, among other methods for producing a capacitor-embedded substrate that is outside the scope of the present invention.
  • the capacitor section 10 is prepared in the same manner as in FIG. 4A.
  • FIG. 6B similar to FIG. 4B, a second capacitor through-hole 35B is formed so as to penetrate the capacitor section 10.
  • both main surfaces of the capacitor section 10 are covered with a first sealing layer 21.
  • the first sealing layer 21 is filled into the second capacitor through-hole 35B.
  • the first sealing layer 21 forms the sealing layer 20.
  • cathode via conductor 55B, first wiring layer 51A, and first wiring layer 51B are formed in a predetermined area.
  • Figures 7A to 7C are cross-sectional views that show a schematic example of a method for producing a capacitor-embedded substrate using a capacitor element that does not have a capacitor through-hole anode conductor.
  • the capacitor element 100a is covered with a sealing insulation layer 50, similar to FIG. 5A.
  • FIG. 7B similar to FIG. 5B, a first substrate through hole 45A and a second substrate through hole 45B are formed to penetrate the sealing insulation layer 50, the sealing layer 20, and the capacitor section 10.
  • the inner surface of the first substrate through-hole 45A exposes not only the metal constituting the wiring layers such as the first wiring layer 51A, but also the anode plate 11.
  • a substrate-penetrating anode conductor 40A is formed on the inner wall surface of the first substrate-penetrating hole 45A, and a substrate-penetrating cathode conductor 40B is formed on the inner wall surface of the second substrate-penetrating hole 45B.
  • a capacitor-embedded substrate 1a is produced in which the capacitor element 100a is embedded in the wiring substrate 200.
  • a different metal is exposed on the inner surface of the first substrate through-hole 45A, making it difficult to form the substrate through-hole anode conductor 40A using common techniques such as plating.
  • a capacitor through-hole cathode conductor is provided inside the second capacitor through-hole.
  • FIG. 8 is a cross-sectional view showing a schematic example of a capacitor-embedded substrate according to a second embodiment of the present invention.
  • FIG. 9 is a plan view taken along line A-A of the capacitor-embedded substrate shown in FIG. 8.
  • FIG. 10 is a plan view taken along line B-B of the capacitor-embedded substrate shown in FIG. 8.
  • a capacitor through-hole cathode conductor 30B is provided inside the second capacitor through-hole 35B, which is not electrically connected to the anode plate 11 but is electrically connected to the cathode layer 12.
  • the substrate through-hole cathode conductor 40B is located inside the capacitor through-hole cathode conductor 30B, as shown in Figures 8 and 10.
  • the capacitor-embedded substrate 2 shown in FIG. 8 has a common configuration with the capacitor-embedded substrate 1 shown in FIG. 1, except for the capacitor through-cathode conductor 30B.
  • the capacitor through-hole cathode conductor 30B inside the second capacitor through-hole 35B further improves the adhesion strength between the layers that make up the capacitor element 100. As a result, problems such as peeling between layers can be suppressed.
  • some of the second capacitor through holes 35B may not have a capacitor through cathode conductor 30B provided inside, but it is preferable that all of the second capacitor through holes 35B have a capacitor through cathode conductor 30B provided inside.
  • an insulating material such as a sealing layer 20 is filled between the capacitor through-hole cathode conductor 30B and the end face of the anode plate 11.
  • a first sealing layer 21 is filled between the capacitor through-hole cathode conductor 30B and the end face of the anode plate 11.
  • an insulating material such as a sealing layer 20 is filled between the substrate through-hole cathode conductor 40B and the capacitor through-hole cathode conductor 30B.
  • a sealing layer 20 is filled between the substrate through-hole cathode conductor 40B and the capacitor through-hole cathode conductor 30B.
  • the same material as the first sealing layer 21 or the same material as the second sealing layer 22 may be filled between the substrate through-hole cathode conductor 40B and the capacitor through-hole cathode conductor 30B.
  • the capacitor through-hole cathode conductor 30B is provided around the entire circumference of the second capacitor through-hole 35B.
  • the diameter of the capacitor through-hole anode conductor 30A is preferably equal to the diameter of the capacitor through-hole cathode conductor 30B.
  • the diameter of the capacitor through-hole anode conductor 30A may be smaller than the diameter of the capacitor through-hole cathode conductor 30B, or may be larger than the diameter of the capacitor through-hole cathode conductor 30B.
  • the area of the capacitor through-hole anode conductor 30A is equal to the area of the capacitor through-hole cathode conductor 30B.
  • the area of the capacitor through-hole anode conductor 30A may be smaller than the area of the capacitor through-hole cathode conductor 30B, or may be larger than the area of the capacitor through-hole cathode conductor 30B.
  • the material constituting the capacitor through-hole anode conductor 30A may be the same as the material constituting the capacitor through-hole cathode conductor 30B, or it may be different.
  • the material constituting the capacitor through-hole cathode conductor 30B may be the same as the material constituting the substrate through-hole cathode conductor 40B, or it may be different.
  • the capacitor through-cathode conductor 30B is electrically connected to the first wiring layer 51B.
  • the first wiring layer 51B is connected to the end of the capacitor through-cathode conductor 30B.
  • the center-to-center distance between the first through-substrate anode conductor and the first through-substrate cathode conductor is equal to the center-to-center distance between the first through-substrate anode conductor and the second through-substrate cathode conductor, or the center-to-center distance between the first through-substrate anode conductor and the first through-substrate cathode conductor is equal to the center-to-center distance between the second through-substrate anode conductor and the first through-substrate cathode conductor.
  • the center-to-center distance between the substrate-penetrating anode conductor and the substrate-penetrating cathode conductor is made uniform, thereby reducing the impedance difference between the current paths. It is also possible to disperse heat generated by the capacitor element and increase the current capacity.
  • the center of the through-substrate anode conductor or the center of the through-substrate cathode conductor means the center of the smallest circle that contains the through-substrate anode conductor or the through-substrate cathode conductor when viewed in a plan view from the thickness direction of the anode plate. Therefore, the center-to-center distance between the through-substrate anode conductor and the through-substrate cathode conductor means the length of the line segment connecting the center of the through-substrate anode conductor and the center of the through-substrate cathode conductor, determined by the above method.
  • a capacitor through-type cathode conductor may not be provided as in the first embodiment, or a capacitor through-type cathode conductor may be provided as in the second embodiment.
  • FIG. 11 is a plan view showing a schematic example of a capacitor-embedded substrate according to a third embodiment of the present invention.
  • the plan view shown in FIG. 11 is a plan view at the same position as in FIG. 2 and FIG. 3.
  • the substrate-penetrating anode conductors 40A and the substrate-penetrating cathode conductors 40B are arranged in a hexagonal pattern as a whole.
  • the substrate-penetrating anode conductors 40A or the substrate-penetrating cathode conductors 40B are arranged at each vertex of a regular hexagon and at the center of the regular hexagon.
  • the substrate-penetrating anode conductors 40A and the substrate-penetrating cathode conductors 40B are arranged alternately from left to right.
  • the arrangement of the substrate-penetrating anode conductors 40A and the substrate-penetrating cathode conductors 40B is not particularly limited, and for example, the substrate-penetrating anode conductors 40A and the substrate-penetrating cathode conductors 40B may be arranged alternately in pairs from left to right.
  • the center-to-center distance between the first substrate-penetrating anode conductor 40A1 and the first substrate-penetrating cathode conductor 40B1 is equal to the center-to-center distance between the first substrate-penetrating anode conductor 40A1 and the second substrate-penetrating cathode conductor 40B2 (the length indicated by ⁇ in FIG. 11).
  • the center-to-center distance between the first substrate-penetrating anode conductor 40A1 and the first substrate-penetrating cathode conductor 40B1 is equal to the center-to-center distance between the second substrate-penetrating anode conductor 40A2 and the first substrate-penetrating cathode conductor 40B1 (the length indicated by ⁇ in FIG. 11).
  • the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B may be arranged in a square as a whole.
  • the substrate through-hole anode conductor 40A or the substrate through-hole cathode conductor 40B is arranged at each vertex of the square shape.
  • the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B are arranged alternately from the top to the bottom, and the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B are arranged alternately from the left to the right.
  • the arrangement of the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B is not particularly limited, and for example, the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B may be arranged alternately by two from the top to the bottom, and the substrate through-hole anode conductor 40A and the substrate through-hole cathode conductor 40B may be arranged alternately by two from the left to the right.
  • the thickness of the wiring substrate is at least twice the thickness of the capacitor element.
  • the thickness of the capacitor-embedded substrate can be increased easily and at low cost by thickening the wiring substrate. As a result, the rigidity of the capacitor-embedded substrate can be increased.
  • FIG. 12 is a cross-sectional view showing a schematic example of a capacitor-embedded substrate according to the fourth embodiment of the present invention.
  • thickness T 2 of wiring board 200 is at least twice thickness T 1 of capacitor element 100.
  • the thickness T2 of the wiring substrate 200 is preferably 2.5 times or more, and more preferably 3 times or more, the thickness T1 of the capacitor element 100. On the other hand, the thickness T2 of the wiring substrate 200 is, for example, 5 times or less the thickness T1 of the capacitor element 100.
  • the thickness T2 of the wiring substrate 200 is not particularly limited, but is, for example, 0.6 mm or more and 2.0 mm or less.
  • the thickness T3 of the sealing insulation layer 50 provided on one surface of the capacitor element 100 may be the same as or different from the thickness T3 of the sealing insulation layer 50 provided on the other surface of the capacitor element 100.
  • the sealing insulating layer constituting the wiring board contains glass cloth, which makes it possible to increase the rigidity of the capacitor-embedded substrate.
  • FIG. 13 is a cross-sectional view showing a schematic example of a capacitor-embedded substrate according to a fifth embodiment of the present invention.
  • the sealing insulation layer 50 constituting the wiring substrate 200 includes glass cloth 60.
  • the glass cloth 60 is made of glass yarn woven, for example, in a lattice pattern.
  • the glass cloth 60 may be included in the entire sealing insulation layer 50, or may be included unevenly in only a part of the sealing insulation layer 50. In the example shown in FIG. 13, multiple layers of glass cloth 60 are stacked at intervals in the thickness direction. The glass cloth 60 in each layer is arranged along the surface direction.
  • the sealing insulation layer 50 containing the glass cloth 60 is formed, for example, using a prepreg in which the glass cloth is pre-impregnated with an insulating resin.
  • One capacitor section 10 may be disposed inside the sealing layer 20, or multiple capacitor sections 10 may be disposed inside the sealing layer 20.
  • multiple capacitor sections 10 are disposed inside the sealing layer 20, it is preferable that adjacent capacitor sections 10 are separated from each other by a through groove that penetrates the capacitor section 10 in the thickness direction (for example, the vertical direction in FIG. 1). In that case, it is preferable that the through groove is filled with an insulating material such as the sealing layer 20.
  • adjacent capacitor sections 10 When adjacent capacitor sections 10 are separated by a through groove, the adjacent capacitor sections 10 only need to be physically separated by the through groove. Therefore, adjacent capacitor sections 10 may be electrically separated or electrically connected.
  • the width of the through groove i.e., the distance between adjacent capacitor sections 10, may be constant in the thickness direction or may become smaller in the thickness direction.
  • the multiple capacitor sections 10 When multiple capacitor sections 10 are arranged inside the sealing layer 20, the multiple capacitor sections 10 may be arranged side by side in a plane direction perpendicular to the thickness direction, may be arranged so as to be stacked in the thickness direction, or may be arranged in a combination of both.
  • the multiple capacitor sections 10 may be arranged regularly or irregularly.
  • the size and shape of the capacitor sections 10 may be the same, or some or all of them may be different. It is preferable that the configuration of the capacitor sections 10 is the same, but capacitor sections 10 with different configurations may be included.
  • the planar shape of the capacitor section 10 when viewed from the thickness direction may be, for example, a rectangle (square or oblong), a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, or a combination of these.
  • the planar shape of the capacitor section 10 may also be an L-shape, a C-shape, a stepped shape, or the like.
  • the anode plate 11 is preferably made of a valve metal that exhibits so-called valve action.
  • valve metals include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Of these, aluminum or an aluminum alloy is preferred.
  • the shape of the anode plate 11 is preferably flat, and more preferably foil-like.
  • plate-like includes “foil-like”.
  • the anode plate 11 may have a porous portion 11B on at least one of the main surfaces of the core portion 11A.
  • the anode plate 11 may have a porous portion 11B on only one of the main surfaces of the core portion 11A, or may have a porous portion 11B on both main surfaces of the core portion 11A.
  • the porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and is more preferably an etched layer.
  • the thickness of the anode plate 11 before the etching process is preferably 60 ⁇ m or more and 200 ⁇ m or less.
  • the thickness of the unetched core portion 11A after the etching process is preferably 15 ⁇ m or more and 70 ⁇ m or less.
  • the thickness of the porous portion 11B is designed according to the required withstand voltage and electrostatic capacitance, but it is preferable that the combined thickness of the porous portions 11B on both sides of the core portion 11A is 10 ⁇ m or more and 180 ⁇ m or less.
  • the pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less.
  • the pore diameter of the porous portion 11B means the median diameter D50 measured by a mercury porosimeter.
  • the pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.
  • the dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape.
  • the dielectric layer 13 is preferably made of an oxide film of the valve metal.
  • the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).
  • the thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.
  • the cathode layer 12 includes a solid electrolyte layer
  • examples of materials constituting the solid electrolyte layer include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred.
  • the conductive polymer may also include a dopant such as polystyrene sulfonate (PSS).
  • PSS polystyrene sulfonate
  • the solid electrolyte layer preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13, and an outer layer that covers the dielectric layer 13.
  • the thickness of the solid electrolyte layer from the surface of the porous portion 11B is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the solid electrolyte layer is formed, for example, by a method of forming a polymerized film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or by applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.
  • the solid electrolyte layer can be formed in a predetermined area by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • the conductor layer 12 includes at least one of a conductive resin layer and a metal layer.
  • the conductor layer may be only a conductive resin layer or only a metal layer. It is preferable that the conductor layer covers the entire surface of the solid electrolyte layer.
  • the conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.
  • the metal layer examples include metal plating films and metal foils.
  • the metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main components.
  • the term "main component" refers to the elemental component with the largest weight ratio.
  • the conductive layer includes, for example, a carbon layer provided on the surface of the solid electrolyte layer, and a copper layer provided on the surface of the carbon layer.
  • the carbon layer is provided to electrically and mechanically connect the solid electrolyte layer and the copper layer.
  • the carbon layer can be formed in a predetermined area by applying carbon paste to the surface of the solid electrolyte layer by sponge transfer, screen printing, dispenser application, inkjet printing, or other methods.
  • the thickness of the carbon layer is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the copper layer can be formed in a predetermined area by applying copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray application, dispenser application, inkjet printing, or other methods.
  • the thickness of the copper layer is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the sealing layer 20 is made of an insulating material. In this case, it is preferable that the sealing layer 20 contains an insulating resin.
  • Examples of insulating resins contained in the sealing layer 20 include epoxy resins, phenolic resins, etc.
  • the sealing layer 20 further contains a filler such as an inorganic filler.
  • inorganic fillers contained in the sealing layer 20 include silica particles, alumina particles, etc.
  • a layer such as a stress relief layer or a moisture-proof film may be provided.
  • the insulating mask layer 25 is made of an insulating material. In this case, it is preferable that the insulating mask layer 25 contains an insulating resin.
  • Examples of insulating resins contained in the insulating mask layer 25 include polyphenylsulfone resin, polyethersulfone resin, cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkylvinylether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.
  • the insulating mask layer 25 may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating mask layer 25 contains inorganic filler, this may adversely affect the effective capacitance portion of the capacitor section 10, so it is preferable that the insulating mask layer 25 is made of a resin alone.
  • the insulating mask layer 25 can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • a mask material such as a composition containing an insulating resin
  • the insulating mask layer 25 may be formed on the porous portion 11B either before the dielectric layer 13 or after the dielectric layer 13.
  • the constituent materials of the first wiring layer 51A and the first wiring layer 51B are preferably the same as each other at least in terms of type, but may be different from each other.
  • the constituent materials of the second wiring layer 52A and the second wiring layer 52B are preferably the same as each other at least in terms of type, but may be different from each other.
  • the constituent materials of the second wiring layer 52A and the second wiring layer 52B are preferably the same as the constituent materials of the first wiring layer 51A and the first wiring layer 51B.
  • the constituent materials of the third wiring layer 53A and the third wiring layer 53B are preferably the same as each other at least in terms of type, but may be different from each other.
  • the constituent materials of the third wiring layer 53A and the third wiring layer 53B are preferably the same as the constituent materials of the first wiring layer 51A, the first wiring layer 51B, the second wiring layer 52A, and the second wiring layer 52B.
  • the anode connection layer functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B.
  • the anode connection layer functions as a barrier layer for the anode plate 11
  • dissolution of the anode plate 11 that occurs during chemical treatment to form wiring layers such as the first wiring layer 51A is suppressed, and thus the infiltration of the chemical solution into the capacitor portion 10 is suppressed, which tends to improve reliability.
  • the anode connection layer preferably includes a layer mainly composed of nickel. In this case, damage to the metal (e.g., aluminum) constituting the anode plate 11 is reduced, and the barrier properties of the anode connection layer against the anode plate 11 are easily improved.
  • the metal e.g., aluminum
  • capacitor through-hole anode conductor 30A may be directly connected to the end face of the anode plate 11.
  • the capacitor-embedded substrate of the present invention is not limited to the above embodiment, and various applications and modifications can be made within the scope of the present invention with respect to the configuration of the capacitor element or wiring substrate, the manufacturing conditions of the capacitor-embedded substrate, etc.
  • the technology of the indirect through conductor using the substrate through conductor in the capacitor-embedded substrate of the present invention is not limited to the electrolytic capacitors described so far, but can also be applied to other capacitor elements.
  • the effects of the present invention can be provided even in a multilayer ceramic capacitor having a first electrode and a second electrode, in which the first electrode and the second electrode are embedded inside the substrate so as to face each other in the thickness direction of the substrate.
  • the capacitor-embedded substrate of the present invention can be suitably used as a constituent material of a composite electronic component.
  • a composite electronic component includes, for example, the capacitor-embedded substrate of the present invention and an electronic component electrically connected to the capacitor-embedded substrate (for example, an external electrode layer).
  • the electronic component electrically connected to the capacitor-embedded substrate may be a passive element or an active element. Both the passive element and the active element may be electrically connected to the capacitor-embedded substrate, or either the passive element or the active element may be electrically connected to the capacitor-embedded substrate. Also, a composite of a passive element and an active element may be electrically connected to the capacitor-embedded substrate.
  • Passive elements include, for example, inductors. Active elements include memory, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), PMICs (Power Management ICs), etc.
  • the capacitor-embedded substrate of the present invention has an overall sheet-like shape. Therefore, in a composite electronic component, the capacitor-embedded substrate can be treated like a mounting substrate, and electronic components can be mounted on the capacitor-embedded substrate. Furthermore, by making the electronic components mounted on the capacitor-embedded substrate into a sheet-like shape, it is also possible to connect the capacitor-embedded substrate and the electronic components in the thickness direction via through conductors that penetrate each electronic component in the thickness direction. As a result, the active elements and passive elements can be configured like a single module.
  • a switching regulator can be formed by electrically connecting a capacitor element between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.
  • the capacitor element includes a capacitor portion and a sealing layer provided so as to cover at least one main surface of the capacitor portion, the capacitor section includes an anode plate having a porous portion on at least one main surface of a core section, a dielectric layer provided on a surface of the porous portion, and a cathode layer provided on a surface of the dielectric layer; at least one first capacitor through hole and at least one second capacitor through hole are provided so as to penetrate the capacitor element without penetrating the wiring board in a thickness direction of the anode plate; a capacitor through-hole anode conductor is provided inside the first capacitor through-hole and electrically connected to an end surface of the anode plate; a first substrate through hole is provided inside the first capacitor through hole and a second substrate through hole is provided inside the second capacitor through hole so as to penetrate the wiring substrate and the capacitor element in a thickness direction of the anode plate; a substrate-penetrating anode conductor electrically connected
  • a capacitor through-cathode conductor is provided inside the second capacitor through-hole, the capacitor through-cathode conductor being electrically connected to the cathode layer but not electrically connected to the anode plate;
  • the substrate through-cathode conductor is located inside the capacitor through-cathode conductor.
  • the through-substrate anode conductor includes a first through-substrate anode conductor;
  • the through-substrate cathode conductor includes a first through-substrate cathode conductor and a second through-substrate cathode conductor;
  • a center-to-center distance between the first substrate-penetrating anode conductor and the first substrate-penetrating cathode conductor is equal to a center-to-center distance between the first substrate-penetrating anode conductor and the second substrate-penetrating cathode conductor.
  • the through-substrate anode conductor further includes a second through-substrate anode conductor;
  • a center-to-center distance between the first substrate-penetrating anode conductor and the first substrate-penetrating cathode conductor is equal to a center-to-center distance between the second substrate-penetrating anode conductor and the first substrate-penetrating cathode conductor.
  • the through-substrate anode conductors include a first through-substrate anode conductor and a second through-substrate anode conductor;
  • the through-substrate cathode conductor includes a first through-substrate cathode conductor;
  • a center-to-center distance between the first substrate-penetrating anode conductor and the first substrate-penetrating cathode conductor is equal to a center-to-center distance between the second substrate-penetrating anode conductor and the first substrate-penetrating cathode conductor.
  • the thickness of the wiring board is at least twice as large as the thickness of the capacitor element.
  • the sealing insulating layer constituting the wiring board contains glass cloth.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
PCT/JP2024/025509 2023-07-28 2024-07-16 コンデンサ内蔵基板 Pending WO2025028242A1 (ja)

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CN202480004339.0A CN120035873A (zh) 2023-07-28 2024-07-16 电容器内置基板
US19/072,257 US20250201486A1 (en) 2023-07-28 2025-03-06 Capacitor embedded substrate

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JPH07221458A (ja) * 1994-01-27 1995-08-18 Cmk Corp 多層プリント配線板
JP2020167361A (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 コンデンサアレイ、及び、複合電子部品
WO2021241325A1 (ja) * 2020-05-28 2021-12-02 株式会社村田製作所 モジュール
WO2023218801A1 (ja) * 2022-05-13 2023-11-16 株式会社村田製作所 コンデンサ

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TWI831226B (zh) * 2021-07-16 2024-02-01 日商村田製作所股份有限公司 電容器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221458A (ja) * 1994-01-27 1995-08-18 Cmk Corp 多層プリント配線板
JP2020167361A (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 コンデンサアレイ、及び、複合電子部品
WO2021241325A1 (ja) * 2020-05-28 2021-12-02 株式会社村田製作所 モジュール
WO2023218801A1 (ja) * 2022-05-13 2023-11-16 株式会社村田製作所 コンデンサ

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TWI885959B (zh) 2025-06-01
JPWO2025028242A1 (https=) 2025-02-06

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