WO2025001622A1 - 一种防蓝光器件、发光器件以及显示装置 - Google Patents

一种防蓝光器件、发光器件以及显示装置 Download PDF

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Publication number
WO2025001622A1
WO2025001622A1 PCT/CN2024/094044 CN2024094044W WO2025001622A1 WO 2025001622 A1 WO2025001622 A1 WO 2025001622A1 CN 2024094044 W CN2024094044 W CN 2024094044W WO 2025001622 A1 WO2025001622 A1 WO 2025001622A1
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light
equal
refractive index
film layer
less
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PCT/CN2024/094044
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English (en)
French (fr)
Inventor
汪顺
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
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Priority to US18/992,401 priority Critical patent/US20260033135A1/en
Publication of WO2025001622A1 publication Critical patent/WO2025001622A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the embodiments of the present application relate to the field of display technology, and in particular, to a blue light protection device, a light-emitting device, and a display apparatus.
  • OLED Organic light-emitting diodes
  • a first aspect of an embodiment of the present application provides a blue light protection device, including:
  • At least one refractive index adjustment layer is stacked, the refractive index adjustment layer includes a first film layer and a second film layer which are stacked, the first film layer is arranged close to the light incident surface of the blue light protection device, and the refractive index of the second film layer can be adjusted under the action of a driving signal;
  • the absolute value of the difference between the refractive index of the first film layer and the refractive index of the second film layer is less than or equal to a first threshold; in the second mode, the absolute value of the difference between the refractive index of the second film layer and the refractive index of the first film layer is greater than or equal to a second threshold, and the second threshold is greater than the first threshold.
  • the first threshold is greater than or equal to 0 and less than or equal to 0.02; the second threshold is greater than or equal to 0.04 and less than or equal to 0.06.
  • the refractive index of the first film layer is greater than or equal to a third threshold value, and less than or equal to a fourth threshold value;
  • the refractive index of the second film layer is greater than or equal to the third threshold and less than or equal to a fifth threshold.
  • the third threshold is greater than or equal to 1.45 and less than or equal to 1.55; the fourth threshold is greater than or equal to 1.65 and less than or equal to 1.75; the fifth threshold is greater than or equal to 1.75 and less than or equal to 1.85.
  • the number of the refractive index adjusting layers is greater than or equal to 3, and the sum of the thicknesses of at least one of the stacked refractive index adjusting layers is less than or equal to 20 ⁇ m.
  • the driving signal is an electrical signal
  • the second film layer includes a driving electrode and a liquid crystal layer.
  • the driving electrode is used to form an electric field under the action of the electrical signal to drive the liquid crystal molecules in the liquid crystal layer to deflect so as to adjust the refractive index of the second film layer.
  • the driving signal is an acoustic wave signal
  • the second film layer includes an acousto-optic crystal
  • the acousto-optic crystal is used to change its own refractive index under the action of the acoustic wave signal.
  • the driving signal is an optical signal
  • the second film layer includes a photonic crystal
  • the photonic crystal is used to change its own refractive index under the action of the optical signal.
  • the material of the first film layer includes at least one of the following: silicon nitride, silicon oxide, and silicon oxynitride.
  • the thickness of the first film layer is the same as the thickness of the second film layer; the number of the refractive index adjusting layers is an even number greater than 3, and the thickness of the refractive index adjusting layer is greater than or equal to 130nm and less than or equal to 140nm.
  • a second aspect of the embodiment of the present application provides a light emitting device, including:
  • the anti-blue light device as described in any one of the first aspects, wherein the anti-blue light device is located on the light emitting side of the at least one light emitting unit.
  • the light emitting device comprises a plurality of the light emitting units, and in the light emitting direction of the light emitting unit, the plurality of light emitting units are stacked;
  • the target parameter value of at least one of the light-emitting units is greater than or equal to the first critical value and less than or equal to the second critical value; the sum of the target parameter values of all the light-emitting units is greater than or equal to the first total critical value and less than or equal to the second total critical value, the first total critical value is the product of the first critical value and the number of light-emitting units, and the second total critical value is the product of the second critical value and the number of light-emitting units.
  • the target parameter value is at least one of the wavelength corresponding to the peak value of the intrinsic spectrum, the half-width of the intrinsic spectrum, and the intensity of the target wavelength of the intrinsic spectrum.
  • the first critical value is a first wavelength, which is greater than or equal to 455nm and less than or equal to 465nm; the second critical value is a second wavelength, which is greater than or equal to 465nm and less than or equal to 475nm.
  • the first critical value is the first half-width, the first half-width is greater than or equal to 5nm and less than or equal to 15nm; the second critical value is the second half-width, the second half-width is greater than or equal to 25nm and less than or equal to 35nm.
  • the target wavelength is 450nm
  • the first critical value is a first intensity, the first intensity is greater than or equal to 0 and less than or equal to 0.1; the second critical value is a second intensity, the second intensity is greater than or equal to 0.25 and less than or equal to 0.4.
  • the light emitting device further includes:
  • the thickness of the second electrode is greater than or equal to 12 nm.
  • the light emitting device further includes:
  • An optical coupling layer is arranged between the second electrode and the blue light protection device.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer is greater than or equal to 150.
  • a third aspect of an embodiment of the present application provides a display device, comprising a base substrate, and a plurality of light-emitting devices as described in any one of the second aspects, arranged on the base substrate.
  • FIG1 schematically shows a schematic diagram of the structure of a blue light protection device proposed in the present disclosure
  • FIG2 schematically shows a schematic diagram of a blue light spectrum in a first mode proposed in the present disclosure
  • FIG3 schematically shows a schematic diagram of a blue light spectrum in a second mode proposed in the present disclosure
  • FIG4 schematically shows a reflection spectrum diagram of a refractive index adjustment layer in a second mode proposed in the present disclosure
  • FIG5 schematically shows a schematic diagram of the structure of a light emitting device proposed in the present disclosure
  • FIG6 schematically shows a schematic diagram of a light-emitting unit structure proposed in the present disclosure.
  • first electrode 100, first electrode; 200, second electrode; 300, light-emitting unit; 301, first carrier layer; 3011, hole injection layer; 3012, hole transport layer; 3013, electron blocking layer; 302, second carrier layer; 3021, hole blocking layer; 3022, electron transport layer; 3023, electron injection layer; 303, light-emitting layer; 400, connecting layer; 500, anti-blue light device; 501, refractive index adjustment layer; 501-1, first film layer; 501-2, second film layer; 600, optical coupling layer; 700, encapsulation layer.
  • Display screens are constantly developing in the direction of high pixels, large color gamut, and low power consumption.
  • OLED organic light-emitting diode
  • flexible displays have obvious advantages, such as foldability and bendability, making flexible screens the trend of display screen development and are favored by electronic device enthusiasts. Therefore, the requirements for device efficiency and lifespan of OLED devices in the field are getting higher and higher.
  • blue light mainly comes from LCD display devices with LED as the backlight source.
  • Organic light-emitting diodes have the characteristics of self-luminescence, and the blue light band they produce is mainly concentrated at 460nm.
  • the harmful blue light with a wavelength between 420nm and 460nm produced by organic light-emitting diodes is lower than that of LCDs, there is still harmful blue light with a blue light band between 420nm and 460nm. Therefore, it is necessary to reduce the intensity of harmful blue light from OLEDs and improve the eye protection effect of OLED devices.
  • an embodiment of the present disclosure proposes an anti-blue light device.
  • Figure 1 schematically shows a schematic diagram of the structure of an anti-blue light device proposed in the present disclosure.
  • the anti-blue light device 500 includes at least one refractive index adjustment layer 501 stacked, and the refractive index adjustment layer 501 includes a first film layer 501-1 and a second film layer 501-2 stacked, and the first film layer 501-1 is arranged close to the light incident surface of the anti-blue light device 500.
  • the refractive index of the second film layer 501-2 can be adjusted under the action of the driving signal.
  • the driving signal includes a driving signal in the first mode and a driving signal in the second mode.
  • the refractive index of the second film layer 501-2 is adjusted by the driving signal in the first mode, so that the refractive index of the first film layer 501-1 and the second film layer 501-2 are close, so that harmful blue light (blue light with a wavelength between 420nm and 460nm) directly passes through the anti-blue light device 500 without reflection, so as to achieve the emission of normal light;
  • the refractive index of the second film layer 501-2 is adjusted by the driving signal in the second mode, so that the second film layer 501-2 after adjusting the refractive index has a limiting effect on harmful blue light, and reduces the proportion of blue light intensity with a wavelength between 420nm and 460nm in the emitted light to the total blue light spectrum intensity, thereby achieving an eye protection effect.
  • the first mode is a mode that does not restrict the outgoing light (for example, the first mode can be called the ordinary mode or the normal mode).
  • the intensity of blue light with a wavelength between 420nm and 460nm in the outgoing light accounts for a relatively large proportion of the total blue light spectrum intensity.
  • the intensity of blue light with a wavelength between 420nm and 460nm in the outgoing light accounts for more than 30% of the total blue light spectrum intensity.
  • the refractive indexes of the first film layer 501-1 and the second film layer 501-2 are close.
  • the refractive index adjustment layer 501 composed of the first film layer 501-1 and the second film layer 501-2 with similar refractive indices will not restrict the outgoing light.
  • the light passes through the various hierarchical structures in the light-emitting device and the at least one refractive index adjustment layer comprising a stacked arrangement.
  • the anti-blue light device 500 of 501 finally emits light into the air, and the intensity of blue light in the range of 420nm to 460nm in its blue light spectrum is relatively large.
  • the second mode is a mode in which the emission of harmful blue light in the emitted light is limited under the regulation of the driving signal to achieve an eye protection effect (for example, the second mode can be called an eye protection mode or a blue light reduction mode).
  • the intensity of blue light with a wavelength between 420nm and 460nm in the emitted light accounts for less than or equal to 30% of the total blue light spectrum intensity.
  • the eye protection effect is a beneficial effect of reducing the user's visual fatigue, reducing the damage of specific wavelength light (such as short-wave blue light between 420nm and 460nm) to the human eye, etc.
  • the refractive index of the second film layer 501-2 changes under the action of the driving signal, so that the changed second film layer 501-2 has a larger refractive index than the first film layer 501-1.
  • the second film layer 501-2 in the refractive index adjustment layer 501 reflects harmful blue light (blue light with a wavelength between 420nm and 460nm) to a certain extent, so that the light passes through the various hierarchical structures in the light-emitting device and the anti-blue light device 500 including at least one stacked refractive index adjustment layer 501.
  • the final output light is emitted into the air, and the proportion of blue light intensity in the range of 420nm to 460nm in its blue light spectrum to the total blue light spectrum intensity is reduced.
  • the refractive index of the first film layer and the refractive index of the second film layer satisfy the following formula:
  • n1 is the refractive index of the first film layer in the first mode
  • n2 is the refractive index of the second film layer in the first mode
  • A1 is the first threshold.
  • Figure 2 schematically shows a schematic diagram of a blue light spectrum under a first mode proposed by the present disclosure.
  • the shaded portion represents the blue light intensity in the range of 420nm to 460nm
  • the curve represents the total blue light spectrum intensity.
  • the absolute value of the difference between the refractive index of the first film layer and the refractive index of the second film layer is less than or equal to the first threshold value, so that the refractive index of the first film layer is very close to the refractive index of the second film layer, and the second film layer does not reflect harmful blue light to a large extent in the first mode.
  • the refractive index adjustment layer (the refractive index adjustable structure shown in FIG4) has the greatest reflection intensity for blue light in the range of 420nm to 460nm (as shown in FIG4, the wavelength range symmetrical with a peak value at 440nm).
  • the light passes through each hierarchical structure in the light-emitting device and reaches the layer containing
  • the anti-blue light device of at least one stacked refractive index adjusting layer filters out the blue light in the range of 420nm to 460nm in the blue light spectrum from the outgoing light through reflection from the second film layer in the second mode in the refractive index adjusting layer, so that the proportion of blue light intensity in the range of 420nm to 460nm in the blue light spectrum of the outgoing light emitted into the air is reduced, and the proportion of blue light intensity in the total blue light spectrum intensity is less than or equal to 30% (as shown in Figure 3, the ratio of the area under the curve in the range of 420nm to 460nm to the total area enclosed by the spectrum).
  • the disclosed embodiment adjusts the refractive index of the second film layer in the refractive index adjustment layer through a driving signal, so that the second film layer in the second mode can reflect blue light in the range of 420nm to 460nm in the blue light spectrum, thereby reducing the proportion of harmful blue light that originally accounted for more than 30% of the total blue light spectrum intensity to less than 30%.
  • the intensity of harmful blue light in the outgoing light received by the user is reduced, thereby effectively protecting the user's eyes.
  • the third threshold is greater than or equal to 1.45 and less than or equal to 1.55; the fourth threshold is greater than or equal to 1.65 and less than or equal to 1.75; the fifth threshold is greater than or equal to 1.75 and less than or equal to 1.85.
  • the third threshold is equal to 1.5, the fourth threshold is equal to 1.7, and the fifth threshold is equal to 1.8. It should be noted that the above example is only a preferred case provided by the embodiment of the present disclosure. The values of the third threshold, the fourth threshold and the fifth threshold involved in the embodiment of the present disclosure can be determined according to actual conditions, and the present disclosure does not limit this.
  • the thickness of each refractive index adjustment layer in the anti-blue light device is determined according to the refractive index of the first film layer and the refractive index of the second film layer, wherein the thickness of each refractive index adjustment layer can be equivalent to the distance between the centers of the first film layer in two adjacent refractive index adjustment layers, or can be equivalent to the distance between the centers of the second film layer in two adjacent refractive index adjustment layers.
  • n1 is the refractive index of the first film layer in the first mode
  • L is the refractive index of the refractive index adjusting layer
  • the thickness of the film ⁇ is the incident angle of the incident light
  • ⁇ is the wavelength of the light.
  • the thickness of the first film layer 501-1 is the same as the thickness of the second film layer 501-2; the number of the refractive index adjustment layers 501 is an even number greater than 3, such as 4, 6, 8, etc., and the thickness of the refractive index adjustment layer 501 is greater than or equal to 130nm and less than or equal to 140nm.
  • the material of the first film layer includes at least one of the following: silicon nitride, silicon oxide, and silicon oxynitride.
  • the material of the first film layer will not cause the refractive index to change due to the adjustment of the driving signal, so that the refractive index of the first film layer in the first mode and the second mode is the same.
  • the second film layer includes a liquid crystal layer, the liquid crystal layer is used to refract and/or reflect light, and the material of the liquid crystal layer is a material that can respond to the driving signal.
  • the mode of the anti-blue light device is adjusted by a driving signal, specifically, the refractive index of the second film layer in each refractive index adjustment layer is adjusted by the driving signal.
  • the driving signal is an electrical signal
  • the second film layer includes a driving electrode for receiving the electrical signal and a liquid crystal layer.
  • the liquid crystal layer material is a nematic liquid crystal, such as an E7 nematic liquid crystal. Under the regulation of different driving signals, the liquid crystal molecules of the nematic liquid crystal deflect to different degrees, thereby achieving a change in the refractive index of the second film layer (liquid crystal layer) based on the driving signal.
  • the driving electrode in the second film layer receives an electrical signal, and an electric field is formed under the action of the electrical signal.
  • the electric field drives the liquid crystal molecules in the liquid crystal layer to deflect, so that the refractive index of the second film layer increases.
  • the 420nm to 460nm range in the blue light spectrum is effectively reflected.
  • the blue light in the range of 420nm to 460nm is reduced.
  • FIG5 schematically shows a schematic diagram of a light-emitting device structure proposed in the present disclosure.
  • a driving electrode can be provided on both sides of the second film layer 501-2, so that the second film layer 501-2 changes its refractive index under the action of the driving voltage difference between the two electrodes.
  • a driving electrode can be provided on both sides of the anti-blue light device 500, so that the anti-blue light device 500 changes its refractive index under the action of the driving voltage difference between the two electrodes.
  • a driving electrode may be provided on the light-emitting side of the second film layer 501-2 (for example, provided on the side of the encapsulation layer 700 away from the first electrode 100), and the second electrode 200 (for example, cathode) may be reused, so that the second film layer 501-2 changes its own refractive index under the action of the driving voltage difference between the driving electrode and the second electrode.
  • a driving electrode may be provided on the light-emitting side of the anti-blue light device 500 (for example, provided on the side of the encapsulation layer 700 away from the first electrode 100), and the second electrode 200 (for example, cathode) may be reused, so that the anti-blue light device 500 changes its own refractive index under the action of the driving voltage difference between the driving electrode and the second electrode.
  • the driving signal may be an acoustic wave signal
  • the material of the second film layer is an acousto-optic crystal.
  • the acousto-optic crystal in the second film layer receives the acoustic wave signal, and changes its own refractive index under the action of the acoustic wave signal, so that the refractive index of the second film layer becomes larger, and under the premise of satisfying the Bragg formula, the blue light in the range of 420nm to 460nm in the blue light spectrum is effectively reflected, so that the proportion of blue light intensity in the range of 420nm to 460nm in the blue light spectrum of the outgoing light emitted into the air decreases.
  • the specific type of the acousto-optic crystal can be determined according to actual conditions, and the embodiments of the present disclosure are not limited here.
  • the driving signal is an optical signal
  • the material of the second film layer is a photonic crystal.
  • the photonic crystal in the second film layer receives the optical signal, and changes its own refractive index under the action of the optical signal, so that the refractive index of the second film layer becomes larger, and under the premise of satisfying the Bragg formula, the blue light in the range of 420nm to 460nm in the blue light spectrum is effectively reflected, so that the proportion of blue light intensity in the range of 420nm to 460nm in the blue light spectrum of the outgoing light emitted into the air decreases.
  • the specific type of the photonic crystal can be determined according to actual conditions, and the embodiments of the present disclosure are not limited here.
  • the receiving and generating of the acoustic signal and the optical signal can be carried out in the same manner as in the case where the driving signal is an electrical signal.
  • the method of setting the driving electrode is implemented in a manner similar to that provided in the embodiment of the present disclosure, and will not be repeated here.
  • the anti-blue light device includes six refractive index adjustment layers stacked together.
  • the refractive index of the first film layer of the refractive index adjustment layer is 1.64, and the refractive index of the second film layer is 1.65; in the second mode, the refractive index of the first film layer of the refractive index adjustment layer is 1.64, and the refractive index of the second film layer is 1.74.
  • the incident angle of the incident light in the second mode is 90°.
  • each refractive index adjustment layer (equivalent to the distance between the centers of the first film layer in two adjacent refractive index adjustment layers or the distance between the centers of the second film layer in two adjacent refractive index adjustment layers) is calculated to be 134nm based on the Bragg formula.
  • the second film layer can reflect the effective blue light in the 420nm to 460nm band because it satisfies the Bragg formula, while the blue light above 460nm is basically unaffected, thereby reducing the proportion of harmful blue light in the output light and improving the eye protection effect of the device.
  • the present application provides a blue light protection device, comprising: at least one refractive index adjustment layer stacked, the refractive index adjustment layer comprising a first film layer and a second film layer stacked, the first film layer being arranged close to the light incident surface of the blue light protection device, and the refractive index of the second film layer being adjustable under the action of a driving signal; in a first mode, the absolute value of the difference between the refractive index of the first film layer and the refractive index of the second film layer is less than or equal to a first threshold value; in a second mode, the difference between the refractive index of the second film layer and the refractive index of the first film layer is greater than or equal to a second threshold value, and the second threshold value is greater than the first threshold value.
  • the present application sets a second film layer with an adjustable refractive index, and adjusts the refractive index of the second film layer through a driving signal, so that the second film layer in the second mode reflects the outgoing light within the wavelength range of harmful light, thereby reducing the intensity of the outgoing light within the wavelength range of harmful light, and achieving an effective eye protection effect.
  • an embodiment of the present application discloses a light-emitting device.
  • Figure 5 schematically shows a schematic diagram of the structure of a light-emitting device proposed in the present disclosure.
  • the light-emitting device includes: at least one light-emitting unit 300; and an anti-blue light device 500 as described in the embodiment of the present disclosure, and the anti-blue light device 500 is located on the light-emitting side of the at least one light-emitting unit 300.
  • the light-emitting device includes a plurality of the light-emitting units 300, and in the light-emitting direction of the light-emitting units 300, the plurality of light-emitting units 300 are stacked; and the target parameter value of at least one of the light-emitting units 300 is greater than or equal to the first critical value, and less than or equal to the second critical value; the sum of the target parameter values of all the light-emitting units 300 is greater than or equal to the first total critical value, and less than or equal to the second total critical value, the first total critical value is the product of the first critical value and the number of light-emitting units, the second total critical value is the product of the second critical value and the number of light-emitting units, and the target parameter value is at least one of the wavelength corresponding to the peak of the intrinsic spectrum, the half-width of the intrinsic spectrum, and the intensity of the target wavelength of the intrinsic spectrum.
  • the light-emitting device includes three stacked first light-emitting units, a second light-emitting unit, and a third light-emitting unit
  • the target parameter values of the light-emitting units satisfy: the target parameter values of any one, two or three of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are greater than or equal to a first critical value and less than or equal to a second critical value, and the sum of the target parameter values of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit is greater than or equal to a first total critical value and less than or equal to a second total critical value.
  • the target parameter value of at least one light-emitting unit in the light-emitting device satisfies the critical value range, and the target parameter values of all light-emitting units satisfy the total critical value range.
  • the target parameter value of at least one light-emitting unit in the light-emitting device satisfies the critical value range, and the target parameter values of all light-emitting units satisfy the total critical value range.
  • the target parameter value is at least one parameter value of the intrinsic spectrum of the light-emitting unit, and the target parameter value includes at least one of the wavelength corresponding to the peak of the intrinsic spectrum, the half-width of the intrinsic spectrum, and the intensity of the target wavelength of the intrinsic spectrum.
  • the target parameter value of at least one light-emitting unit in the light-emitting device is greater than or equal to the first critical value and less than or equal to the second critical value, and at the same time, the sum of the target parameter values of all light-emitting units is greater than or equal to the first total critical value and less than or equal to the second total critical value.
  • the target parameter value is the intrinsic light
  • the wavelength corresponding to the spectrum peak is the wavelength corresponding to the intrinsic spectrum peak of at least one light-emitting unit (any one, any two or three light-emitting units) is greater than or equal to the first critical value of the wavelength, and less than or equal to the second critical value of the wavelength.
  • the sum of the wavelengths corresponding to the intrinsic spectrum peaks of all light-emitting units is greater than or equal to the first total critical value of the wavelength (three times the first critical value of the wavelength), and less than or equal to the second total critical value of the wavelength (three times the second critical value of the wavelength); for a light-emitting device with four light-emitting units, when the target parameter value is the intrinsic spectrum half-width, the intrinsic spectrum half-width of at least one light-emitting unit (any one, any two, any three or four light-emitting units) is greater than or equal to the first critical value of the half-width, and less than or equal to the second critical value of the half-width.
  • the sum of the intrinsic spectrum half-widths of all light-emitting units is greater than or equal to the first total critical value of the half-width (four times the first critical value of the half-width), and less than or equal to the second total critical value of the half-width (four times the second critical value of the half-width).
  • the first critical value is a first wavelength, which is greater than or equal to 455nm and less than or equal to 465nm; the second critical value is a second wavelength, which is greater than or equal to 465nm and less than or equal to 475nm.
  • the first wavelength is equal to 460nm and the second wavelength is equal to 470nm, and the light-emitting unit satisfies the following formula: 460 ⁇ n ⁇ 470; 460 ⁇ N ⁇ ( ⁇ 1 + ⁇ 2 +...+ ⁇ N ) ⁇ 470 ⁇ N;
  • ⁇ n is the wavelength corresponding to the intrinsic spectrum peak of at least one light-emitting unit in the light-emitting device, n is at least one of 1 to N; N is the number of light-emitting units in the light-emitting device, ⁇ 1 is the wavelength corresponding to the intrinsic spectrum peak of the first light-emitting unit, ⁇ 2 is the wavelength corresponding to the intrinsic spectrum peak of the second light-emitting unit, and ⁇ N is the wavelength corresponding to the intrinsic spectrum peak of the Nth light-emitting unit.
  • the first critical value is the first half-width, the first half-width is greater than or equal to 5nm and less than or equal to 15nm; the second critical value is the second half-width, the second half-width is greater than or equal to Equal to 25nm and less than or equal to 35nm.
  • the first half-width is equal to 10nm, the second half-width is equal to 30nm, and the light-emitting unit satisfies the following formula: 10 ⁇ FWHM n ⁇ 30; 10 ⁇ N ⁇ (FWHM 1 +FWHM 2 +...+FWHM N ) ⁇ 30 ⁇ N;
  • FWHM n is the intrinsic spectrum half-width of at least one light-emitting unit in the light-emitting device, n is at least one of 1 to N; N is the number of light-emitting units in the light-emitting device, FWHM 1 is the intrinsic spectrum half-width of the first light-emitting unit, FWHM 2 is the intrinsic spectrum half-width of the second light-emitting unit, and FWHM N is the intrinsic spectrum half-width of the Nth light-emitting unit.
  • first half-height width and the second half-height width can be determined according to actual conditions, and the present disclosure does not limit them here.
  • the target wavelength is 450nm
  • the first critical value is a first intensity, the first intensity is greater than or equal to 0, and less than or equal to 0.1
  • the second critical value is a second intensity, the second intensity is greater than or equal to 0.25, and less than or equal to 0.4.
  • the target wavelength is 450nm
  • the first intensity is 0, and the second intensity is 0.35
  • the light-emitting unit satisfies the following formula: 0 ⁇ A n ⁇ 0.35; 0 ⁇ (A 1 +A 2 +...+A N ) ⁇ 0.35 ⁇ N;
  • An is the intensity of the intrinsic spectrum target wavelength of at least one light-emitting unit in the light-emitting device, n is at least one of 1 to N; N is the number of light-emitting units in the light-emitting device, A1 is the intensity of the intrinsic spectrum target wavelength of the first light-emitting unit, A2 is the intensity of the intrinsic spectrum target wavelength of the second light-emitting unit, and AN is the intensity of the intrinsic spectrum target wavelength of the Nth light-emitting unit.
  • the embodiment of the present disclosure sets a combination of at least one light-emitting unit that meets the critical value condition (including the critical value and the total critical value) in the light-emitting device, and pre-filters the harmful blue light in the light that needs to be injected into the anti-blue light device, thereby reducing the proportion of harmful blue light in the light that needs to be injected into the anti-blue light device, so that the proportion of harmful blue light in the light that needs to be reflected by the anti-blue light device is within the range that the anti-blue light device can handle. Within the reasonable range, the eye protection effect of the light-emitting device is improved.
  • the light-emitting device also includes: a first electrode 100 and a second electrode 200, the at least one light-emitting unit 300 is located between the first electrode 100 and the second electrode 200, and the anti-blue light device 500 is arranged on the side of the second electrode 200 away from the first electrode 100; an optical coupling layer 600, the optical coupling layer 600 is arranged between the second electrode 200 and the anti-blue light device 500; at least one connecting layer 400, each of the connecting layers 400 is arranged between two adjacent light-emitting units 300, the connecting layer includes a stacked P-type doped layer and an N-type doped layer, the N-type doped layer is arranged close to the light-emitting surface of the light-emitting unit, and the P-type doped layer is arranged close to the light-incident surface of the light-emitting unit; an encapsulation layer 700, the encapsulation layer 700 is arranged on the side of the anti-blue light device 500 away
  • the intensity of the microcavity formed by the light-emitting device affects the width of the intrinsic spectrum. Specifically, since the microcavity formed by the light-emitting device narrows the intrinsic spectrum, the smaller the microcavity intensity, the narrower the intrinsic spectrum of the outgoing light; the narrower the intrinsic spectrum, the greater the proportion of harmful blue light. Therefore, in order to further reduce the proportion of harmful blue light in the light emitted from the self-luminous device, it is necessary to increase the microcavity intensity by increasing the thickness of the second electrode 200 and/or the optical coupling layer 600. In an optional embodiment, the thickness of the second electrode 200 is greater than or equal to 12nm. The product of the refractive index of the optical coupling layer 600 and the thickness of the optical coupling layer 600 is greater than or equal to 150.
  • each of the light-emitting units 300 includes: a light-emitting layer 303, which is arranged between the first electrode 100 and the second electrode 200; a first carrier layer 301, which is arranged between the first electrode 100 and the light-emitting layer 303; and a second carrier layer 302, which is arranged between the second electrode 200 and the light-emitting layer 303.
  • the first carrier layer includes at least one of a hole injection layer (HIL) 3011, a hole transport layer (HTL) 3012 and an electron blocking layer (EBL) 3013, wherein the hole injection layer 3011, the hole transport layer 3012 and the electron blocking layer 3013 are sequentially stacked between the first electrode 100 and the light-emitting layer 303 along a first direction, wherein the first direction is the direction from the first electrode 100 to the second electrode 200.
  • the electron blocking layer 3013 blocks the diffusion of electrons transmitted by the light-emitting layer 303, limits the electrons and holes in the light-emitting layer, and reduces the injection pressure.
  • the first carrier layer 301 may include only one of the hole injection layer 3011, the hole transport layer 3012 and the electron blocking layer 3013, or any two of the hole injection layer 3011, the hole transport layer 3012 and the electron blocking layer 3013, or the hole injection layer 3011, the hole transport layer 3012 and the electron blocking layer 3013.
  • the specific first carrier layer 301 may be set according to the actual situation, and the present disclosure does not limit this.
  • the first carrier layer 301 includes a hole injection layer 3011, which is arranged on the side of the first electrode 100 close to the light-emitting layer 303; a hole transport layer 3012, which is arranged on the side of the hole injection layer 3011 away from the first electrode 100; and an electron blocking layer 3013, which is arranged on the side of the hole transport layer 3012 away from the first electrode 100.
  • the second carrier layer 302 includes at least one of a hole blocking layer (HBL) 3021, an electron transport layer (ETL) 3022, and an electron injection layer (EIL) 3023, wherein the hole blocking layer 3021, the electron transport layer 3022, and the electron injection layer 3023 are sequentially stacked along the first direction between the light-emitting layer 303 and the second electrode 200.
  • the hole blocking layer 3021 can block the diffusion of holes transmitted by the light-emitting layer 303, confine the holes in the light-emitting layer, reduce the injection barrier, reduce the accumulation of interface charges, and delay interface degradation, thereby extending the life of the pixel.
  • the second carrier layer 302 may include only any one layer among the hole blocking layer 3021, the electron transport layer 3022, and the electron injection layer 3023, or may include any two layers among the hole blocking layer 3021, the electron transport layer 3022, and the electron injection layer 3023, or may include the hole blocking layer 3021, the electron transport layer 3022, and the electron injection layer 3023.
  • the specific second carrier layer 302 can be set according to actual conditions, and the present disclosure does not limit this.
  • the second carrier layer 302 includes a hole blocking layer 3021, which is arranged on the side of the light-emitting layer 303 away from the first electrode 100; an electron transport layer 3022, which is arranged on the side of the hole blocking layer 3021 away from the first electrode 100; and an electron injection layer 3023, which is arranged on the side of the electron transport layer 3022 away from the first electrode 100.
  • the comparative example used for comparison is a light-emitting device including one light-emitting unit.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer is less than 150, and the thickness of the second electrode is less than 12nm;
  • the wavelength corresponding to the peak value of the intrinsic spectrum of the light-emitting unit in the light-emitting device of the comparative example is less than 460nm, the intrinsic half-width is greater than 30nm, and the intensity at the wavelength of 450nm of the intrinsic spectrum is greater than 0.35 and less than 1.
  • the blue light intensity in the wavelength range of 420nm to 460nm accounts for more than 40% and less than 100%.
  • the light-emitting device provided in Example 1 includes a light-emitting unit.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 1 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelength corresponding to the peak value of the intrinsic spectrum of the light-emitting unit in the light-emitting device provided in Example 1 is greater than or equal to 460nm, and less than or equal to 470nm;
  • the intrinsic half-width is greater than or equal to 10nm, and less than or equal to 30nm;
  • the intensity at the wavelength of 450nm of the intrinsic spectrum is greater than or equal to 0, and less than or equal to 0.35.
  • the proportion of blue light intensity in the 420nm to 460nm band is greater than 30%, and less than 40%; in the second mode, the proportion of blue light intensity in the 420nm to 460nm band is greater than 0%, and less than or equal to 30%.
  • the light-emitting device provided in Example 2 includes two light-emitting units.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 2 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelengths corresponding to the intrinsic spectrum peaks of the two light-emitting units in the light-emitting device provided in Example 2 are both greater than or equal to 460nm, and both are less than or equal to 470nm;
  • the intrinsic half-widths are both greater than or equal to 10nm, and both are less than or equal to 30nm;
  • the intensity at the 450nm wavelength of the intrinsic spectrum is not subject to range restrictions;
  • the sum of the wavelengths corresponding to the intrinsic spectrum peaks of the two light-emitting units is greater than or equal to 920nm, and less than or equal to 940nm;
  • the blue light intensity in the 420nm to 460nm band accounts for more than 30% and less than 40%; in the second mode, the blue light intensity in the 420nm to 460nm band accounts for more than 0% and less than or equal to 30%.
  • the light-emitting device provided in Example 3 includes two light-emitting units (a first light-emitting unit and a second light-emitting unit).
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 3 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelength corresponding to the intrinsic spectrum peak of the first light-emitting unit in the light-emitting device provided in Example 3 is greater than or equal to 460nm and less than or equal to 470nm, and the wavelength corresponding to the intrinsic spectrum peak of the second light-emitting unit is different from that of the first light-emitting unit;
  • the intrinsic half-width of the first light-emitting unit is greater than or equal to 10nm and less than or equal to 30nm, and the intrinsic half-width of the second light-emitting unit is different from that of the first light-emitting unit;
  • the blue light intensity in the 420nm to 460nm band accounts for more than 30% and less than 40%; in the second mode, the blue light intensity in the 420nm to 460nm band accounts for more than 0% and less than or equal to 30%.
  • the light-emitting device provided in Example 4 includes two light-emitting units (a first light-emitting unit and a second light-emitting unit).
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 4 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelength corresponding to the intrinsic spectrum peak of the first light-emitting unit in the light-emitting device provided in Example 4 is greater than or equal to 460nm and less than or equal to 470nm, and the wavelength corresponding to the intrinsic spectrum peak of the second light-emitting unit has no range restriction;
  • the intrinsic half-width of the first light-emitting unit is greater than or equal to 10nm , and is less than or equal to 30nm, the intrinsic half-width of the second light-emitting unit has no range limit;
  • the proportion of blue light intensity in the 420nm ⁇ 460nm band is greater than 30%, and less than 40%; in the second mode, the proportion of blue light intensity in the 420nm ⁇ 460nm band is greater than 0%, and less than or equal to 30%.
  • the light-emitting device provided in Example 5 includes two light-emitting units (a first light-emitting unit and a second light-emitting unit).
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 5 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12 nm.
  • the wavelength corresponding to the intrinsic spectrum peak of the first light-emitting unit in the light-emitting device provided in Example 5 is greater than or equal to 460 nm and less than or equal to 470 nm, and the wavelength corresponding to the intrinsic spectrum peak of the second light-emitting unit has no range restriction.
  • the intrinsic half-width of the first light-emitting unit is greater than or equal to 10 nm and less than or equal to 30 nm.
  • the intrinsic half-width of the second light-emitting unit has no range restriction; the intensity of the intrinsic spectrum of the first light-emitting unit at a wavelength of 450nm is greater than or equal to 0 and less than or equal to 0.35, and the intensity of the intrinsic spectrum of the second light-emitting unit at a wavelength of 450nm is different from that of the first light-emitting unit; the sum of the wavelengths corresponding to the intrinsic spectrum peaks of the two light-emitting units is greater than or equal to 920nm and less than or equal to 940nm; the sum of the intrinsic half-width of the two light-emitting units is greater than or equal to 20nm and less than or equal to 60nm; the sum of the intensities of the intrinsic spectra of the two light-emitting units at a wavelength of 450nm is greater than or equal
  • the proportion of blue light intensity in the 420nm to 460nm band is greater than 30% and less than 40%; in the second mode, the proportion of blue light intensity in the 420nm to 460nm band is greater than 0% and less than or equal to 30%.
  • the light-emitting device provided in Example 6 includes three light-emitting units.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 6 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelength corresponding to the intrinsic spectrum peak of any one of the three light-emitting units in the light-emitting device provided in Example 6 is greater than or equal to 460nm and less than or equal to 470nm, and the wavelengths corresponding to the intrinsic spectrum peaks of the other two light-emitting units are not limited in range;
  • the intrinsic half-width of any one of the three light-emitting units is greater than or equal to 10nm and less than or equal to 30nm, and the other two light-emitting units are greater than or equal to 10nm.
  • the intrinsic half-width of the light unit has no range restriction; the intensity of the intrinsic spectrum of any one of the three light-emitting units at a wavelength of 450nm is greater than or equal to 0 and less than or equal to 0.35, and the intensity of the intrinsic spectra of the other two light-emitting units at a wavelength of 450nm has no range restriction; the sum of the wavelengths corresponding to the peak values of the intrinsic spectra of the three light-emitting units is greater than or equal to 1380nm and less than or equal to 1410nm; the sum of the intrinsic half-width of the three light-emitting units is greater than or equal to 30nm and less than or equal to 90nm; the sum of the intensities of the intrinsic spectra of the three light-emitting units at a wavelength of 450nm is greater than or equal to 0 and less than or equal to 1.05.
  • the blue light intensity in the 420nm ⁇ 460nm band accounts for more than 30% and less than 40%; in the second mode, the blue light intensity in the 420nm ⁇ 460nm band accounts for more than 40% and less than 50%;
  • the blue light intensity in the band range accounts for more than 0% and less than or equal to 30%.
  • the light-emitting device provided in Example 7 includes N light-emitting units.
  • the product of the refractive index of the light coupling layer and the thickness of the light coupling layer in the light-emitting device provided in Example 7 is greater than or equal to 150, and the thickness of the second electrode is greater than or equal to 12nm;
  • the wavelength corresponding to the intrinsic spectrum peak of any one of the N light-emitting units in the light-emitting device provided in Example 7 is greater than or equal to 460nm and less than or equal to 470nm, and the wavelength corresponding to the intrinsic spectrum peak of the other N-1 light-emitting units has no range restriction;
  • the intrinsic half-maximum width of any one of the N light-emitting units is greater than or equal to 10nm and less than or equal to 30nm, and the other N-1 light-emitting units
  • the intrinsic half-width is not limited in range; the intensity of the intrinsic spectrum of any one of the N light-emitting units at a wavelength of
  • the proportion of blue light intensity in the 420nm ⁇ 460nm band is greater than 30% and less than 40%; in the second mode, the proportion of blue light intensity in the 420nm ⁇ 460nm band is greater than 0% and less than or equal to 30%.
  • the light-emitting device provided by the present disclosure meets the critical value range and the total critical value range as described above, and can reduce the proportion of harmful blue light in the first mode to 30% to 40%; when adjusted to the second mode, the light-emitting device is further adjusted by the anti-blue light device, and the proportion of harmful blue light in the emitted light is reduced to 0% to 30%, which effectively improves the eye protection effect of the light-emitting device.
  • an embodiment of the present disclosure provides a display device, which includes a base substrate and a plurality of light-emitting devices as described in the embodiment of the present disclosure arranged on the base substrate.
  • the display device may be a display or a product including a display.
  • the display may be a flat panel display (Flat Panel Display, FPD), a micro display, etc. If the scene is divided according to whether the user can see the back of the display, the display may be a transparent display or an opaque display. It should be noted that the specific display device can be determined according to the actual situation, and the present disclosure does not limit it here.
  • the device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.
  • references herein to "one embodiment,” “embodiment,” or “one or more embodiments” mean that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present disclosure.
  • examples of the term “in one embodiment” do not necessarily all refer to the same embodiment.
  • any reference signs placed between brackets shall not be construed as limiting the claims.
  • the word “comprising” does not exclude the presence of elements or steps not listed in the claims.
  • the word “a” or “an” preceding an element does not exclude the presence of a plurality of such elements.
  • the present disclosure may be implemented by means of hardware comprising a number of different elements and by means of a suitably programmed computer. In a unit claim enumerating a number of means, several of these means may be embodied by the same item of hardware.
  • the use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names.

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Abstract

本公开提供一种防蓝光器件、发光器件以及显示装置，涉及显示技术领域，所述防蓝光器件包括：层叠设置的至少一个折射率调节层，所述折射率调节层包括层叠设置的第一膜层和第二膜层，所述第一膜层靠近防蓝光器件的入光面设置，所述第二膜层的折射率在驱动信号的作用下可调节；在第一模式下，所述第一膜层的折射率与所述第二膜层的折射率的差值绝对值小于或等于第一阈值；在第二模式下，所述第二膜层的折射率与所述第一膜层的折射率的差值大于或等于第二阈值，所述第二阈值大于所述第一阈值。

Description

一种防蓝光器件、发光器件以及显示装置
本申请要求在2023年06月30日提交中国专利局、申请号为202310798331.3、发明名称为“一种防蓝光器件、发光器件以及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请实施例涉及显示技术领域，具体而言，涉及一种防蓝光器件、发光器件以及显示装置。
背景技术
有机发光二极管(OLED，organic light-emitting diode)具有全固态、自主发光、亮度高、高分辨率、视角宽、响应速度快、厚度薄、体积小、重量轻、可使用柔性基板、低电压直流驱动、功耗低、工作温度范围宽等优点，使得它的应用市场十分广泛。
发明内容
本公开采用如下技术方案：
本申请实施例第一方面提供一种防蓝光器件，包括：
层叠设置的至少一个折射率调节层，所述折射率调节层包括层叠设置的第一膜层和第二膜层，所述第一膜层靠近防蓝光器件的入光面设置，所述第二膜层的折射率在驱动信号的作用下可调节；
在第一模式下，所述第一膜层的折射率与所述第二膜层的折射率的差值绝对值小于或等于第一阈值；在第二模式下，所述第二膜层的折射率与所述第一膜层的折射率的差值大于或等于第二阈值，所述第二阈值大于所述第一阈值。
在一种可选的实施方式中，所述第一阈值大于或等于0，且小于或等于0.02；所述第二阈值大于或等于0.04，且小于或等于0.06。
在一种可选的实施方式中，所述第一膜层的折射率大于或等于第三阈值，且小于或等于第四阈值；
所述第二膜层的折射率大于或等于所述第三阈值，且小于或等于第五阈值。
在一种可选的实施方式中，所述第三阈值大于或等于1.45，且小于或等于1.55；所述第四阈值大于或等于1.65，且小于或等于1.75；所述第五阈值大于或等于1.75，且小于或等于1.85。
在一种可选的实施方式中，所述折射率调节层的数量大于或等于3，所述层叠设置的至少一个折射率调节层的厚度之和小于或等于20μm。
在一种可选的实施方式中，所述驱动信号为电信号，所述第二膜层包括驱动电极以及液晶层，所述驱动电极用于在所述电信号的作用下形成电场，驱动所述液晶层中的液晶分子偏转，以调节所述第二膜层的折射率。
在一种可选的实施方式中，所述驱动信号为声波信号，所述第二膜层包括声光晶体，所述声光晶体用于在所述声波信号的作用下，改变自身的折射率。
在一种可选的实施方式中，所述驱动信号为光信号，所述第二膜层包括光子晶体，所述光子晶体用于在所述光信号的作用下，改变自身的折射率。
在一种可选的实施方式中，所述第一膜层的材料包括以下至少一种：氮化硅、氧化硅以及氮氧化硅。
在一种可选的实施方式中，所述第一膜层的厚度与所述第二膜层的厚度相同；所述折射率调节层的数量为大于3的偶数，所述折射率调节层的厚度大于或等于130nm，且小于或等于140nm。
本申请实施例第二方面提供一种发光器件，包括：
至少一个发光单元；以及
如第一方面中任一项所述的防蓝光器件，所述防蓝光器件位于所述至少一个发光单元的出光侧。
在一种可选的实施方式中，所述发光器件包括多个所述发光单元，在所述发光单元的出光方向上，多个所述发光单元层叠设置；并且
所述发光单元中的至少一个发光单元的目标参数值大于或等于第一临界值，且小于或等于第二临界值；所有发光单元的目标参数值之和大于或等于第一总临界值，且小于或等于第二总临界值，所述第一总临界值为所述第一临界值与发光单元数量的乘积，所述第二总临界值为所述第二临界值与发光 单元数量的乘积，所述目标参数值为本征光谱峰值对应的波长、本征光谱半高宽以及本征光谱目标波长的强度中的至少一者。
在一种可选的实施方式中，在所述目标参数值为所述本征光谱峰值对应的波长的情况下，所述第一临界值为第一波长，所述第一波长大于或等于455nm，且小于或等于465nm；所述第二临界值为第二波长，所述第二波长大于或等于465nm，且小于或等于475nm。
在一种可选的实施方式中，在所述目标参数值为所述本征光谱半高宽的情况下，所述第一临界值为第一半高宽，所述第一半高宽大于或等于5nm，且小于或等于15nm；所述第二临界值为第二半高宽，所述第二半高宽大于或等于25nm，且小于或等于35nm。
在一种可选的实施方式中，所述目标波长为450nm，在所述目标参数值为所述本征光谱目标波长的强度的情况下，所述第一临界值为第一强度，所述第一强度大于或等于0，且小于或等于0.1；所述第二临界值为第二强度，所述第二强度大于或等于0.25，且小于或等于0.4。
在一种可选的实施方式中，所述发光器件还包括：
第一电极以及第二电极，所述至少一个发光单元位于所述第一电极与所述第二电极之间，所述防蓝光器件设置在所述第二电极背离所述第一电极的一侧。
在一种可选的实施方式中，所述第二电极的厚度大于或等于12nm。
在一种可选的实施方式中，所述发光器件还包括：
光耦合层，所述光耦合层设置在所述第二电极与所述防蓝光器件之间。
在一种可选的实施方式中，所述光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150。
本申请实施例第三方面提供一种显示装置，所述显示装置包括衬底基板，以及设置在所述衬底基板上的多个如第二方面中任一项所述的发光器件。
上述说明仅是本公开技术方案的概述，为了能够更清楚了解本公开的技术手段，而可依照说明书的内容予以实施，并且为了让本公开的上述和其它目的、特征和优点能够更明显易懂，以下特举本公开的具体实施方式。
附图说明
为了更清楚地说明本公开实施例或相关技术中的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示意性地示出了本公开提出的一种防蓝光器件结构示意图；
图2示意性地示出了本公开提出的一种第一模式下蓝光光谱示意图；
图3示意性地示出了本公开提出的一种第二模式下蓝光光谱示意图；
图4示意性地示出了本公开提出的一种第二模式下折射率调节层反射谱示意图；
图5示意性地示出了本公开提出的一种发光器件结构示意图；
图6示意性地示出了本公开提出的一种发光单元结构示意图。
附图标记说明：100、第一电极；200、第二电极；300、发光单元；301、第一载流子层；3011、空穴注入层；3012、空穴传输层；3013、电子阻挡层；302、第二载流子层；3021、空穴阻挡层；3022、电子传输层；3023、电子注入层；303、发光层；400、连接层；500、防蓝光器件；501、折射率调节层；501-1、第一膜层；501-2、第二膜层；600、光耦合层；700、封装层。
具体实施例
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
显示屏幕朝着高像素、大色域、低功耗方向不断发展。而OLED(有机发光二极管，organic light-emitting diode)柔性显示屏相比TFT-LCD具有的明显优势，如可折叠、可弯曲等优点，使得柔性屏幕成为显示屏幕发展的趋势，备受电子设备爱好者的青睐。因此，领域内对于OLED器件的器件效率、寿命要求越来越高。虽然目前也开发出了很多高效率、长寿命的可满足使用的OLED器件，但实际使用过程中仍不能完全满足当前行业内追求的显示效果，其中，除了追求色彩饱和度，亮度等，OLED器件发光是否会对人眼造成伤 害也成为现今考虑的问题。
蓝光的长时间照射会导致视力下降甚至丧失，而波长在400～460nm之间的短波蓝光对人眼的危害最大。在显示领域中，蓝光主要来源于以LED为背光源的LCD显示装置。有机发光二极管具有自发光特征，产生的蓝色光波段主要集中在460nm处，虽然有机发光二极管所产生的波长在420nm～460nm之间的有害蓝光较于LCD有所降低，但仍然存在蓝色光波段在420nm～460nm之间的有害蓝光，因此需要降低OLED有害蓝光的强度，提升OLED装置的护眼效果。
有鉴于此，本公开实施例提出一种防蓝光器件，图1示意性地示出了本公开提出的一种防蓝光器件结构示意图，如图1所示，所述防蓝光器件500包括层叠设置的至少一个折射率调节层501，所述折射率调节层501包括层叠设置的第一膜层501-1和第二膜层501-2，所述第一膜层501-1靠近防蓝光器件500的入光面设置。
本公开实施例中，所述第二膜层501-2的折射率在驱动信号的作用下可调节。具体而言，所述驱动信号包括第一模式下的驱动信号以及第二模式下的驱动信号，所述第二膜层501-2的折射率在经由第一模式下的驱动信号进行折射率调整，使得第一膜层501-1和第二膜层501-2的折射率接近，使得有害蓝光(波长在420nm～460nm之间的蓝光)不经反射直接透过防蓝光器件500，实现正常光线的出射；所述第二膜层501-2的折射率在经由第二模式下的驱动信号进行折射率调整，使得调整折射率后的所述第二膜层501-2对有害蓝光起到限制作用，降低出射光线中波长在420nm～460nm之间的蓝光强度占总蓝光光谱强度的比例，从而实现护眼效果。
本公开实施例中，所述第一模式为不会对出射光线进行限制的模式(例如第一模式可以称为普通模式或正常模式)，此时出射光线中波长在420nm～460nm之间的蓝光强度占总蓝光光谱强度的比例相对较大，示例性地，在第一模式下，出射光线中波长在420nm～460nm之间的蓝光强度占总蓝光光谱强度的比例大于30％。具体而言，在第一模式下，第一膜层501-1和第二膜层501-2的折射率接近，此时由折射率接近的第一膜层501-1和第二膜层501-2组成的所述折射率调节层501不会对出射光线起到限制作用，光线经过发光器件中的各个层级结构以及所述包含层叠设置的至少一个折射率调节层 501的防蓝光器件500，最终的出射光线射入空气中，其蓝光光谱中420nm～460nm范围内的蓝光强度较大。
本公开实施例中，所述第二模式为在驱动信号的调节作用下，对出射光线中有害蓝光的出射进行限制以达到护眼效果的模式(例如第二模式可以称为护眼模式或蓝光减弱模式)，示例性地，在第二模式下，出射光线中波长在420nm～460nm之间的蓝光强度占总蓝光光谱强度的比例小于或等于30％。其中，所述护眼效果为减少用户的视觉疲劳、降低特定波长光(如420nm～460nm之间的短波蓝光)对人眼的损害等的有益效果(例如将发光器件的出射光由窄视角切换至宽视角已以达到护眼效果)。具体而言，在第二模式下，第二膜层501-2的折射率在驱动信号的作用下发生改变，使改变后的第二膜层501-2相较于第一膜层501-1具有更大的折射率，此时所述折射率调节层501中的第二膜层501-2对有害蓝光(波长在420nm～460nm之间的蓝光)进行一定程度的反射，使光线经过发光器件中的各个层级结构以及所述包含层叠设置的至少一个折射率调节层501的防蓝光器件500，最终的出射光线射入空气中，其蓝光光谱中420nm～460nm范围内的蓝光强度占总蓝光光谱强度的比例降低。
具体而言，在第一模式下，所述第一膜层501-1的折射率与所述第二膜层501-2的折射率的差值绝对值小于或等于第一阈值，以使在第一模式下的所述第一膜层501-1和所述第二膜层501-2的折射率接近；在第二模式下，所述第二膜层501-2的折射率与所述第一膜层501-1的折射率的差值大于或等于第二阈值，且所述第二阈值大于所述第一阈值，以使在所述第二模式下的所述第二膜层501-2相较于第一膜层501-1具有更大的折射率。
在一种可选的实施方式中，所述第一阈值大于或等于0，且小于或等于0.02；所述第二阈值大于或等于0.04，且小于或等于0.06。示例性地，所述第一阈值为0.01，所述第二阈值为0.05。需要说明的是，上述示例的情况只是本公开实施例提供的一种优选情况，本公开实施例中涉及的第一阈值以及第二阈值的数值可根据实际情况确定，本公开在此不作限制。
在第一模式下，所述第一膜层的折射率与所述第二膜层的折射率满足如下公式：
|n2-n1|≤A1；
0≤A1≤0.02；
其中，n1为第一模式下的所述第一膜层的折射率；n2为第一模式下的所述第二膜层的折射率；A1为所述第一阈值。
在第二模式下，所述第一膜层的折射率与第一模式下第一膜层的折射率相同，所述第二膜层的折射率经驱动信号的调节，与第一模式下的第二膜层的折射率不同。在第二模式下，所述第一膜层的折射率与所述第二膜层的折射率满足如下公式：
|n′2-n′1|≥A2；
0.04≤A2≤0.06；
n′1＝n1，n′2>n2，A2>A1；
其中，n′1为第二模式下的所述第一膜层的折射率；n′2为第二模式下的所述第二膜层的折射率；A2为所述第二阈值；n1为第一模式下的所述第一膜层的折射率；n2为第一模式下的所述第二膜层的折射率；A1为所述第一阈值。
本公开实施例中，图2示意性地示出了本公开提出的一种第一模式下蓝光光谱示意图，如图2所示，阴影部分表示420nm～460nm范围内的蓝光强度，曲线表示总蓝光光谱强度，在第一模式下，第一膜层的折射率与第二膜层的折射率的差值绝对值小于或等于第一阈值，使得第一膜层的折射率与第二膜层的折射率非常接近，第二膜层在第一模式下不对有害蓝光光线进行较大程度的反射，光线经过发光器件中的各个层级结构以及所述包含层叠设置的至少一个折射率调节层501的防蓝光器件500，最终的出射光线射入空气中，其蓝光光谱中420nm～460nm范围内的蓝光强度较大，占总蓝光光谱强度的比例大于30％，且小于或等于40％(如图2中所示的阴影部分面积占光谱围成的总面积之比)。
图3示意性地示出了本公开提出的一种第二模式下蓝光光谱示意图，如图3所示，在第二模式下，第二膜层的折射率与第一膜层的折射率的差值大于或等于第二阈值，使得第二膜层的折射率大于第一膜层的折射率，第二膜层在第二模式下因其更大的折射率，可以对有害蓝光光线进行较大程度的反射。图4示意性地示出了本公开提出的一种第二模式下折射率调节层反射谱示意图，如图4所示，所述折射率调节层(图4所示的折射率可调结构)对于420nm～460nm范围内的蓝光(如图4所示，以440nm处为峰值对称的波长范围)的反射强度最大。光线经过发光器件中的各个层级结构到达所述包含 层叠设置的至少一个折射率调节层的防蓝光器件，经过折射率调节层中第二模式下的第二膜层的反射，将蓝光光谱中420nm～460nm范围内的蓝光从出射光线中滤除，使得射入空气中的出射光线的蓝光光谱中420nm～460nm范围内的蓝光强度占比下降，占总蓝光光谱强度的比例小于或等于30％(如图3中所示的420nm～460nm范围内曲线下面积占光谱围成的总面积之比)。
本公开实施例通过驱动信号调整折射率调节层中第二膜层的折射率，使第二模式下的第二膜层可以反射蓝光光谱中420nm～460nm范围内的蓝光，使原本在总蓝光光谱强度中占比30％以上的有害蓝光的占比降低至30％以下，使用者接收到的出射光线中有害蓝光强度降低，从而对使用者的眼睛起到有效的保护作用。
在一种可选的实施方式中，为了使第一膜层501-1和第二膜层501-2可以有效透过光线，同时保证第二膜层折射率可以在第一模式和第二模式之间基于驱动信号进行调节，本公开实施例中，所述第一膜层的折射率大于或等于第三阈值，且小于或等于第四阈值；所述第二膜层的折射率大于或等于所述第三阈值，且小于或等于第五阈值。
在一种可选的实施方式中，所述第三阈值大于或等于1.45，且小于或等于1.55；所述第四阈值大于或等于1.65，且小于或等于1.75；所述第五阈值大于或等于1.75，且小于或等于1.85。示例性地，所述第三阈值等于1.5，所述第四阈值等于1.7，所述第五阈值等于1.8。需要说明的是，上述示例的情况只是本公开实施例提供的一种优选情况，本公开实施例中涉及的第三阈值、第四阈值以及第五阈值的数值可根据实际情况确定，本公开在此不作限制。
本公开实施例中，所述防蓝光器件中每个所述折射率调节层的厚度根据第一膜层的折射率以及第二膜层的折射率确定，其中，每个所述折射率调节层的厚度可以等价于相邻的两个折射率调节层中第一膜层中心间的距离，也可以等价于相邻的两个折射率调节层中第二膜层中心间的距离。具体而言，光线波长满足布拉格公式的反射光线在折射率调节层的第二膜层处发生反射，不能透过折射率调节层，因此每个所述折射率调节层的厚度满足如下所示的布拉格公式：
2n1Lsinθ＝λ
其中，n1为第一模式下的所述第一膜层的折射率；L为所述折射率调节层 的厚度；θ为入射光线的入射角度；λ为光线波长。
在一种可选的实施方式中，为了保证折射率调节层501可以有效在不同驱动信号的作用下针对性的反射特定波长的蓝光光线，所述防蓝光器件500中需要层叠设置的至少一个折射率调节层，且所述折射率调节层的数量大于或等于3，且所述层叠设置的至少一个折射率调节层的厚度之和小于或等于20μm。示例性地，若基于布拉格公式以及第一膜层和第二膜层的折射率确定折射率调节层的厚度为100nm，则所述防蓝光器件中至少需要设置3个所述厚度为100nm的折射率调节层，并最多不超过200个折射率调节层(200个厚度为100nm的折射率调节层的厚度之和为20μm)。需要说明的是，上述示例只是为了使本领域技术人员更好的理解本公开的方案而提出的一种具体实施方式，实际的折射率调节层的数量可根据实际情况确定，本公开在此不作限制。
在一种可选的实施方式中，每个折射率调节层501中，所述第一膜层501-1的厚度与所述第二膜层501-2的厚度相同；所述折射率调节层501的数量为大于3的偶数，例如4，6，8等，所述折射率调节层501的厚度大于或等于130nm，且小于或等于140nm。
本申请实施例中，所述第一膜层的材料包括以下至少一种：氮化硅、氧化硅以及氮氧化硅，所述第一膜层的材料不会因驱动信号的调节而导致折射率发生变化，使得在第一模式和第二模式下的第一膜层的折射率相同。所述第二膜层包括液晶层，所述液晶层用于对光线进行折射和/或反射，所述液晶层材料为可响应驱动信号的材料。
本申请实施例中，通过驱动信号调节防蓝光器件的模式，具体为通过所述驱动信号调整每个折射率调节层中第二膜层的折射率。在一种可选的实施方式中，所述驱动信号为电信号，所述第二膜层包括用于接收电信号的驱动电极以及液晶层，所述液晶层材料为向列型液晶，如E7型向列型液晶，在不同的驱动信号的调节下，向列型液晶的液晶分子发生不同程度的偏转，从而实现基于驱动信号调节第二膜层(液晶层)的折射率改变。具体而言，在第二模式下，所述第二膜层中的驱动电极接收到电信号，在电信号的作用下形成电场，电场驱使所述液晶层中的液晶分子发生偏转，使得第二膜层的折射率变大，在满足布拉格公式的前提下，有效反射蓝光光谱中420nm～460nm范 围内的蓝光，使得射入空气中的出射光线的蓝光光谱中420nm～460nm范围内的蓝光强度占比下降。
在一种可选的实施方式中，图5示意性地示出了本公开提出的一种发光器件结构示意图，如图1和图5所示，可以在第二膜层501-2的两侧分别设置一个驱动电极，使得第二膜层501-2在两个电极的驱动电压差的作用下，改变自身的折射率。或者，可以在防蓝光器件500的两侧分别设置一个驱动电极，使得防蓝光器件500在两个电极的驱动电压差的作用下，改变自身的折射率。
在一种可选的实施方式中，如图1和图5所示，可以在第二膜层501-2的出光侧设置一个驱动电极(例如设置在封装层700背离第一电极100的一侧)，且复用第二电极200(例如：阴极)，使得第二膜层501-2在驱动电极和第二电极的驱动电压差的作用下，改变自身的折射率。或者，可以在防蓝光器件500的出光侧设置一个驱动电极(例如设置在封装层700背离第一电极100的一侧)，且复用第二电极200(例如：阴极)，使得防蓝光器件500在驱动电极和第二电极的驱动电压差的作用下，改变自身的折射率。
在一种可选的实施方式中，所述驱动信号可以为声波信号，在所述第二膜层材料为声光晶体。具体而言，在第二模式下，所述第二膜层中的声光晶体接收到声波信号，在声波信号的作用下改变自身的折射率，使得第二膜层的折射率变大，在满足布拉格公式的前提下，有效反射蓝光光谱中420nm～460nm范围内的蓝光，使得射入空气中的出射光线的蓝光光谱中420nm～460nm范围内的蓝光强度占比下降。需要说明的是，所述声光晶体的具体类型可根据实际情况确定，本公开实施例在此不作限制。
在一种可选的实施方式中，所述驱动信号为光信号，在所述第二膜层材料为光子晶体。具体而言，在第二模式下，所述第二膜层中的光子晶体接收到光信号，在光信号的作用下改变自身的折射率，使得第二膜层的折射率变大，在满足布拉格公式的前提下，有效反射蓝光光谱中420nm～460nm范围内的蓝光，使得射入空气中的出射光线的蓝光光谱中420nm～460nm范围内的蓝光强度占比下降。需要说明的是，所述光子晶体的具体类型可根据实际情况确定，本公开实施例在此不作限制。
在一种可选的实施方式中，在驱动信号为声波信号或光信号的情况下，声波信号和光信号的接受和产生可以采用与上述在驱动信号为电信号的情况 下，与本公开实施例中所提供的设置驱动电极的方法类似的方式去实现，在此不再赘述。
为使本领域技术人员更加清楚地理解本公开，现通过以下实施例对本公开所述的防蓝光器件进行详细说明。
在一种可选的实施方式中，所述防蓝光器件包括层叠设置的六个折射率调节层。在第一模式下，所述折射率调节层的第一膜层的折射率为1.64，第二膜层的折射率为1.65；在第二模式下，所述折射率调节层的第一膜层的折射率为1.64，第二膜层的折射率为1.74，第二模式下入射光线的入射角度为90°。基于布拉格公式计算得到每个折射率调节层的厚度(等价于相邻的两个折射率调节层中第一膜层中心间的距离或相邻的两个折射率调节层中第二膜层中心间的距离)为134nm。防蓝光器件中，第一膜层与第二膜层的厚度相同，所述防蓝光器件的厚度为6×134＝804μm。该防蓝光器件在驱动信号的调节下由第一模式转换为第二模式时，第二膜层因其满足布拉格公式，可以对420nm～460nm波段范围内的有效蓝光进行反射，而高于460nm的蓝光基本不受影响，从而降低出射光线中有害蓝光的占比，提升器件的护眼效果。
本申请提供一种防蓝光器件，包括：层叠设置的至少一个折射率调节层，所述折射率调节层包括层叠设置的第一膜层和第二膜层，所述第一膜层靠近防蓝光器件的入光面设置，所述第二膜层的折射率在驱动信号的作用下可调节；在第一模式下，所述第一膜层的折射率与所述第二膜层的折射率的差值绝对值小于或等于第一阈值；在第二模式下，所述第二膜层的折射率与所述第一膜层的折射率的差值大于或等于第二阈值，所述第二阈值大于所述第一阈值。本申请通过设置可调节折射率的第二膜层，通过驱动信号调节第二膜层的折射率，使在第二模式下的第二膜层对有害光波长范围内的出射光进行反射，从而降低有害光波长范围内出射光的强度，达到有效护眼的效果。
基于同一发明构思，本申请实施例公开一种发光器件，图5示意性地示出了本公开提出的一种发光器件结构示意图，如图5所示，所述发光器件包括：至少一个发光单元300；以及如本公开实施例中所述的防蓝光器件500，所述防蓝光器件500位于所述至少一个发光单元300的出光侧。
如果不对发光单元的光学参数进行限制，光线通过发光器件时不会滤去有害蓝光，这会导致射入折射率调节层中的光线中420nm～460nm的有害蓝光 占比过高，即使通过折射率调节层也无法完全过滤，因此需要在发光器件中对有害蓝光预先进行滤除，以提升折射率调节层的护眼效果。具体而言，本公开实施例中，所述发光器件包括多个所述发光单元300，在所述发光单元300的出光方向上，多个所述发光单元300层叠设置；并且，所述发光单元300中的至少一个发光单元300的目标参数值大于或等于第一临界值，且小于或等于第二临界值；所有发光单元300的目标参数值之和大于或等于第一总临界值，且小于或等于第二总临界值，所述第一总临界值为所述第一临界值与发光单元数量的乘积，所述第二总临界值为所述第二临界值与发光单元数量的乘积，所述目标参数值为本征光谱峰值对应的波长、本征光谱半高宽以及本征光谱目标波长的强度中的至少一者。
示例性地，所述发光器件包括三个层叠设置的第一发光单元、第二发光单元以及第三发光单元，所述发光单元的目标参数值满足：所述第一发光单元、第二发光单元以及第三发光单元中的任意一个、两个或三个的目标参数值大于或等于第一临界值，且小于或等于第二临界值，且，所述第一发光单元、第二发光单元以及第三发光单元的目标参数值之和大于或等于第一总临界值，且小于或等于第二总临界值。
本申请实施例中，通过对发光器件中层叠设置的多个发光单元的目标参数进行限制，使发光器件中至少一个发光单元的目标参数值满足临界值的范围，同时使所有发光单元的目标参数值满足总临界值的范围，在满足上述临界值和总临界值范围的多个发光单元的折射作用下，含有大量420nm～460nm的有害蓝光的光线透过发光器件的多个发光单元后，会将光线中占比大于或等于40％的有害蓝光降低至小于40％，从而在光线射入防蓝光器件时，已经对其有害蓝光的占比进行了削减，提升防蓝光器件的护眼效果。
本公开实施例中，所述目标参数值为发光单元的本征光谱的至少一项参数值，所述目标参数值包括本征光谱峰值对应的波长、本征光谱半高宽以及本征光谱目标波长的强度中的至少一种。对于发光器件中的多个发光单元，对于至少一种目标参数值，满足发光器件中至少一个发光单元的目标参数值大于或等于第一临界值，且小于或等于第二临界值，同时，所有发光单元的目标参数值之和大于或等于第一总临界值，且小于或等于第二总临界值。
示例性地，对于设置三个发光单元的发光器件，当目标参数值为本征光 谱峰值对应的波长时，所述至少一个发光单元(任意一个、任意两个或三个发光单元)的本征光谱峰值对应的波长大于或等于波长的第一临界值，且小于或等于波长的第二临界值，同时，所有发光单元的本征光谱峰值对应的波长之和大于或等于波长的第一总临界值(波长的第一临界值的三倍)，且小于或等于波长的第二总临界值(波长的第二临界值的三倍)；对于设置四个发光单元的发光器件，当目标参数值为本征光谱半高宽时，所述至少一个发光单元(任意一个、任意两个、任意三个或四个发光单元)的本征光谱半高宽大于或等于半高宽的第一临界值，且小于或等于半高宽的第二临界值，同时，所有发光单元的本征光谱半高宽之和大于或等于半高宽的第一总临界值(半高宽的第一临界值的四倍)，且小于或等于半高宽的第二总临界值(半高宽的第二临界值的四倍)。需要说明的是，上述示例只是为了使本领域技术人员更好的理解本公开的技术方案而提出的两种可选方式，具体的目标参数的类型以及发光单元的数量根据实际情况确定，本公开在此不作限制。
在一种可选的实施方式中，在所述目标参数值为所述本征光谱峰值对应的波长的情况下，所述第一临界值为第一波长，所述第一波长大于或等于455nm，且小于或等于465nm；所述第二临界值为第二波长，所述第二波长大于或等于465nm，且小于或等于475nm。示例性地，所述第一波长等于460nm，所述第二波长等于470nm，此时发光单元满足如下公式：
460≤λn≤470；
460×N≤(λ1+λ2+…+λN)≤470×N；
其中，λn为所述发光器件中至少一个发光单元的本征光谱峰值对应的波长，n为1～N中的至少一个；N为所述发光器件中发光单元的数量，λ1为第一发光单元的本征光谱峰值对应的波长，λ2为第二发光单元的本征光谱峰值对应的波长，λN为第N发光单元的本征光谱峰值对应的波长。
需要说明的是，上述示例只是为了使本领域技术人员更好的理解本公开的技术方案而提出的一种优选方式，具体的第一波长以及第二波长的数值可根据实际情况确定，本公开在此不作限制。
在一种可选的实施方式中，在所述目标参数值为所述本征光谱半高宽的情况下，所述第一临界值为第一半高宽，所述第一半高宽大于或等于5nm，且小于或等于15nm；所述第二临界值为第二半高宽，所述第二半高宽大于或 等于25nm，且小于或等于35nm。示例性地，所述第一半高宽等于10nm，所述第二半高宽等于30nm，此时发光单元满足如下公式：
10≤FWHMn≤30；
10×N≤(FWHM1+FWHM2+…+FWHMN)≤30×N；
其中，FWHMn为所述发光器件中至少一个发光单元的本征光谱半高宽，n为1～N中的至少一个；N为所述发光器件中发光单元的数量，FWHM1为第一发光单元的本征光谱半高宽，FWHM2为第二发光单元的本征光谱半高宽，FWHMN为第N发光单元的本征光谱半高宽。
需要说明的是，上述示例只是为了使本领域技术人员更好的理解本公开的技术方案而提出的一种优选方式，具体的第一半高宽以及第二半高宽的数值可根据实际情况确定，本公开在此不作限制。
在一种可选的实施方式中，所述目标波长为450nm，在所述目标参数值为所述本征光谱目标波长的强度的情况下，所述第一临界值为第一强度，所述第一强度大于或等于0，且小于或等于0.1；所述第二临界值为第二强度，所述第二强度大于或等于0.25，且小于或等于0.4。示例性地，所述目标波长为450nm，所述第一强度为0，所述第二强度为0.35，此时发光单元满足如下公式：
0≤An≤0.35；
0≤(A1+A2+…+AN)≤0.35×N；
其中，An为所述发光器件中至少一个发光单元的本征光谱目标波长的强度，n为1～N中的至少一个；N为所述发光器件中发光单元的数量，A1为第一发光单元的本征光谱目标波长的强度，A2为第二发光单元的本征光谱目标波长的强度，AN为第N发光单元的本征光谱目标波长的强度。
需要说明的是，上述示例只是为了使本领域技术人员更好的理解本公开的技术方案而提出的一种优选方式，具体的第一强度以及第二强度的数值可根据实际情况确定，本公开在此不作限制。
本公开实施例通过在发光器件中设置满足临界值条件(包括临界值以及总临界值)的至少一个发光单元的组合，对需要射入防蓝光器件的光线中的有害蓝光进行事先过滤，降低需要射入防蓝光器件的光线中有害蓝光的占比，从而使光线中需要被防蓝光器件反射掉的有害蓝光占比处于防蓝光器件可处 理的范围内，提升发光器件的护眼效果。
本公开实施例中，如图5所示，所述发光器件还包括：第一电极100以及第二电极200，所述至少一个发光单元300位于所述第一电极100与所述第二电极200之间，所述防蓝光器件500设置在所述第二电极200背离所述第一电极100的一侧；光耦合层600，所述光耦合层600设置在所述第二电极200与所述防蓝光器件500之间；至少一个连接层400，每个所述连接层400设置在相邻的两个发光单元300之间，所述连接层包括层叠设置的P型掺杂层以及N型掺杂层，所述N型掺杂层靠近发光单元的出光面设置，所述P型掺杂层靠近发光单元的入光面设置；封装层700，所述封装层700设置在所述防蓝光器件500背离所述第一电极100的一侧。
还需注意的是，发光器件形成的微腔强度影响本征光谱的宽度。具体而言，由于发光器件形成的微腔会收窄本征光谱，而微腔强度越小，出射光线的本征光谱越窄；本征光谱越窄，有害蓝光的占比越大。因此为了进一步降低自发光器件中射出的光线中有害蓝光的占比，需要通过提高第二电极200和/或光耦合层600的厚度来提升微腔强度，在一种可选的实施方式中，所述第二电极200的厚度大于或等于12nm。所述光耦合层600的折射率与所述光耦合层600的厚度的乘积大于或等于150。
在一种可选的实施方式中，图6示意性地示出了本公开提出的一种发光单元结构示意图，如图6所示，每个所述发光单元300包括：发光层303，所述发光层设置于所述第一电极100与所述第二电极200之间；第一载流子层301，所述第一载流子层301设置于所述第一电极100与所述发光层303之间；第二载流子层302，所述第二载流子层设置于所述第二电极200与所述发光层303之间。
在一种可选的实施方式中，所述第一载流子层包括：空穴注入层(Hole Injection Layer，HIL)3011、空穴传输层(Hole Transport Layer，HTL)3012和电子阻挡层(Electron Block Layer，EBL)3013中的至少一层，所述空穴注入层3011、所述空穴传输层3012和所述电子阻挡层3013沿第一方向依次层叠设置在所述第一电极100与所述发光层303之间，所述第一方向为所述第一电极100指向所述第二电极200的方向。电子阻挡层3013对发光层303传输的电子起到阻挡其扩散的作用，将电子和空穴限制在发光层，同时降低注 入势垒，也降低界面电荷堆积，延缓界面劣化，进而可延长子像素寿命。需要说明的是，所述第一载流子层301可以只包含空穴注入层3011、空穴传输层3012和电子阻挡层3013中的任意一层，也可以包含空穴注入层3011、空穴传输层3012和电子阻挡层3013中的任意两层，也可以包含空穴注入层3011、空穴传输层3012和电子阻挡层3013，具体的第一载流子层301可以根据实际情况设置，本公开对此不作限制。
优选地，如图6所示，所述第一载流子层301包括空穴注入层3011，所述空穴注入层3011设置在所述第一电极100靠近所述发光层303的一侧；空穴传输层3012，所述空穴传输层3012设置在所述空穴注入层3011背离所述第一电极100的一侧；电子阻挡层3013，所述电子阻挡层3013设置在所述空穴传输层3012背离所述第一电极100的一侧。
在一种可选的实施方式中，所述第二载流子层302包括：空穴阻挡层(Hole Block Layer，HBL)3021、电子传输层(Electron Transport Layer，ETL)3022、电子注入层(Electron Injection Layer，EIL)3023中的至少一层，所述空穴阻挡层3021、所述电子传输层3022和所述电子注入层3023沿所述第一方向依次层叠设置在所述发光层303与所述第二电极200之间。空穴阻挡层3021能够对发光层303传输的空穴起到阻挡其扩散的作用，将空穴限制在发光层，同时降低注入势垒，降低界面电荷堆积，延缓界面劣化，进而可延长该像素寿命。需要说明的是，所述第二载流子层302可以只包含空穴阻挡层3021、电子传输层3022、电子注入层3023中的任意一层，也可以包含空穴阻挡层3021、电子传输层3022、电子注入层3023中的任意两层，也可以包含空穴阻挡层3021、电子传输层3022、电子注入层3023，具体的第二载流子层302可以根据实际情况设置，本公开对此不作限制。
优选地，所述第二载流子层302包括空穴阻挡层3021，所述空穴阻挡层3021设置在所述发光层303背离所述第一电极100的一侧；电子传输层3022，所述电子传输层3022设置在所述空穴阻挡层3021背离所述第一电极100的一侧；电子注入层3023，所述电子注入层3023设置在所述电子传输层3022背离所述第一电极100的一侧。
为使本领域技术人员更加清楚地理解本公开，现通过以下实施例对本公开所述的发光器件进行详细说明。
用于对比的对比例为包含一个发光单元的发光器件，该对比例的发光器件中，其光耦合层的折射率与所述光耦合层的厚度的乘积小于150，其第二电极的厚度小于12nm；该对比例发光器件中的发光单元的本征光谱峰值对应的波长小于460nm，本征半高宽大于30nm，本征光谱450nm波长处的强度大于0.35，且小于1。经该对比例的发光器件出射的光线中，420nm～460nm波段范围内蓝光强度占比大于40％，且小于100％。
实施例1
实施例1提供的发光器件中包含一个发光单元，实施例1提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例1提供的发光器件中的发光单元的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm；本征半高宽大于或等于10nm，且小于或等于30nm；本征光谱450nm波长处的强度大于或等于0，且小于或等于0.35。经该实施例1的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例2
实施例2提供的发光器件中包含2个发光单元，实施例2提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例2提供的发光器件中的两个发光单元的本征光谱峰值对应的波长均大于或等于460nm，且均小于或等于470nm；本征半高宽均大于或等于10nm，且均小于或等于30nm；本征光谱450nm波长处的强度均无范围限制；两个发光单元的本征光谱峰值对应的波长之和大于或等于920nm，且小于或等于940nm；两个发光单元的本征半高宽之和大于或等于20nm，且小于或等于60nm；两个发光单元的本征光谱450nm波长处的强度之和无范围限制。经该实施例2的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例3
实施例3提供的发光器件中包含2个发光单元(第一发光单元和第二发光单元)，实施例3提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例3提供的发光器件中的第一发光单元的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm，第二发光单元的的本征光谱峰值对应的波长与第一发光单元不同；第一发光单元的本征半高宽大于或等于10nm，且小于或等于30nm，第二发光单元的本征半高宽与第一发光单元不同；第一发光单元和第二发光单元的本征光谱450nm波长处的强度均无范围限制；两个发光单元的本征光谱峰值对应的波长之和大于或等于920nm，且小于或等于940nm；两个发光单元的本征半高宽之和大于或等于20nm，且小于或等于60nm；两个发光单元的本征光谱450nm波长处的强度之和无范围限制。经该实施例3的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例4
实施例4提供的发光器件中包含2个发光单元(第一发光单元和第二发光单元)，实施例4提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例4提供的发光器件中的第一发光单元的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm，第二发光单元的的本征光谱峰值对应的波长无范围限制；第一发光单元的本征半高宽大于或等于10nm，且小于或等于30nm，第二发光单元的本征半高宽无范围限制；第一发光单元和第二发光单元的本征光谱450nm波长处的强度均大于或等于0，且均小于或等于0.35；两个发光单元的本征光谱峰值对应的波长之和大于或等于920nm，且小于或等于940nm；两个发光单元的本征半高宽之和大于或等于20nm，且小于或等于60nm；两个发光单元的本征光谱450nm波长处的强度之和大于或等于0，且小于或等于0.7。经该实施例4的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例5
实施例5提供的发光器件中包含2个发光单元(第一发光单元和第二发光单元)，实施例5提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例5提供的发光器件中的第一发光单元的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm，第二发光单元的的本征光谱峰值对应的波长无范围限制；第一发光单元的本征半高宽大于或等于10nm，且小于或等于30nm，第二发光单元的本征半高宽无范围限制；第一发光单元的本征光谱450nm波长处的强度大于或等于0，且小于或等于0.35，第二发光单元的本征光谱450nm波长处的强度与第一发光单元不同；两个发光单元的本征光谱峰值对应的波长之和大于或等于920nm，且小于或等于940nm；两个发光单元的本征半高宽之和大于或等于20nm，且小于或等于60nm；两个发光单元的本征光谱450nm波长处的强度之和大于或等于0，且小于或等于0.7。经该实施例5的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例6
实施例6提供的发光器件中包含3个发光单元，实施例6提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例6提供的发光器件中的三个发光单元中的任意一个的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm，其他两个发光单元的本征光谱峰值对应的波长无范围限制；三个发光单元中的任意一个的本征半高宽大于或等于10nm，且小于或等于30nm，其他两个发光单元的本征半高宽无范围限制；三个发光单元中的任意一个的本征光谱450nm波长处的强度大于或等于0，且小于或等于0.35，其他两个发光单元的本征光谱450nm波长处的强度无范围限制；三个发光单元的本征光谱峰值对应的波长之和大于或等于1380nm，且小于或等于1410nm；三个发光单元的本征半高宽之和大于或等于30nm，且小于或等于90nm；三个发光单元的本征光谱450nm波长处的强度之和大于或等于0，且小于或等于1.05。经该实施例6的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm 波段范围内蓝光强度占比大于0％，且小于或等于30％。
实施例7
实施例7提供的发光器件中包含N个发光单元，实施例7提供的发光器件中光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150，其第二电极的厚度大于或等于12nm；该实施例7提供的发光器件中的N个发光单元中的任意一个的本征光谱峰值对应的波长大于或等于460nm，且小于或等于470nm，其他N-1个发光单元的本征光谱峰值对应的波长无范围限制；N个发光单元中的任意一个的本征半高宽大于或等于10nm，且小于或等于30nm，其他N-1个发光单元的本征半高宽无范围限制；N个发光单元中的任意一个的本征光谱450nm波长处的强度大于或等于0，且小于或等于0.35，其他N-1个发光单元的本征光谱450nm波长处的强度无范围限制；N个发光单元的本征光谱峰值对应的波长之和大于或等于N×460nm，且小于或等于N×470nm；N个发光单元的本征半高宽之和大于或等于N×10nm，且小于或等于N×30nm；N个发光单元的本征光谱450nm波长处的强度之和大于或等于0，且小于或等于N×0.35。经该实施例7的发光器件出射的光线中，在第一模式下，420nm～460nm波段范围内蓝光强度占比大于30％，且小于40％；在第二模式下，420nm～460nm波段范围内蓝光强度占比大于0％，且小于或等于30％。
由上述实施例1至实施例7与对比例的护眼效果对比可知，本公开提供的发光器件满足如上所述的临界值范围和总临界值范围，可以使第一模式下的有害蓝光占比下降至30％～40％；在调整至第二模式，发光器件经防蓝光器件进一步的光线调整，将出射光线的有害蓝光占比下降至0％～30％，有效提升了发光器件的护眼效果。
基于同一发明构思，本公开实施例提供一种显示装置，所述显示装置包括衬底基板，以及设置在所述衬底基板上的多个如本公开实施例所述的发光器件。
本公开实施例中，所述显示装置可以为显示器或包含显示器的产品。其中，显示器可以是平板显示器(Flat Panel Display，FPD)、微型显示器等。若按照用户能否看到显示器背面的场景划分，所述显示器可以是透明显示器或不透明显示器。需要说明的是，具体的显示装置可根据实际情况确定，本公开在此不作限制。
以上所描述的装置实施例仅仅是示意性的，其中所述作为分离部件说明的单元可以是或者也可以不是物理上分开的，作为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。本领域普通技术人员在不付出创造性的劳动的情况下，即可以理解并实施。
本文中所称的“一个实施例”、“实施例”或者“一个或者多个实施例”意味着，结合实施例描述的特定特征、结构或者特性包括在本公开的至少一个实施例中。此外，请注意，这里“在一个实施例中”的词语例子不一定全指同一个实施例。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本公开的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。本公开可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
最后应说明的是：以上实施例仅用以说明本公开的技术方案，而非对其限制；尽管参照前述实施例对本公开进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本公开各实施例技术方案的精神和范围。

Claims (20)

  1. 一种防蓝光器件，其特征在于，包括：
    层叠设置的至少一个折射率调节层，所述折射率调节层包括层叠设置的第一膜层和第二膜层，所述第一膜层靠近防蓝光器件的入光面设置，所述第二膜层的折射率在驱动信号的作用下可调节；
    在第一模式下，所述第一膜层的折射率与所述第二膜层的折射率的差值绝对值小于或等于第一阈值；在第二模式下，所述第二膜层的折射率与所述第一膜层的折射率的差值大于或等于第二阈值，所述第二阈值大于所述第一阈值。
  2. 根据权利要求1所述的防蓝光器件，其特征在于，所述第一阈值大于或等于0，且小于或等于0.02；所述第二阈值大于或等于0.04，且小于或等于0.06。
  3. 根据权利要求1所述的防蓝光器件，其特征在于，所述第一膜层的折射率大于或等于第三阈值，且小于或等于第四阈值；
    所述第二膜层的折射率大于或等于所述第三阈值，且小于或等于第五阈值。
  4. 根据权利要求3所述的防蓝光器件，其特征在于，所述第三阈值大于或等于1.45，且小于或等于1.55；所述第四阈值大于或等于1.65，且小于或等于1.75；所述第五阈值大于或等于1.75，且小于或等于1.85。
  5. 根据权利要求1所述的防蓝光器件，其特征在于，所述折射率调节层的数量大于或等于3，所述层叠设置的至少一个折射率调节层的厚度之和小于或等于20μm。
  6. 根据权利要求1所述的防蓝光器件，其特征在于，所述驱动信号为电信号，所述第二膜层包括驱动电极以及液晶层，所述驱动电极用于在所述电信号的作用下形成电场，驱动所述液晶层中的液晶分子偏转，以调节所述第 二膜层的折射率。
  7. 根据权利要求1所述的防蓝光器件，其特征在于，所述驱动信号为声波信号，所述第二膜层包括声光晶体，所述声光晶体用于在所述声波信号的作用下，改变自身的折射率。
  8. 根据权利要求1所述的防蓝光器件，其特征在于，所述驱动信号为光信号，所述第二膜层包括光子晶体，所述光子晶体用于在所述光信号的作用下，改变自身的折射率。
  9. 根据权利要求1所述的防蓝光器件，其特征在于，所述第一膜层的材料包括以下至少一种：氮化硅、氧化硅以及氮氧化硅。
  10. 根据权利要求1所述的防蓝光器件，其特征在于，所述第一膜层的厚度与所述第二膜层的厚度相同；所述折射率调节层的数量为大于3的偶数，所述折射率调节层的厚度大于或等于130nm，且小于或等于140nm。
  11. 一种发光器件，其特征在于，包括：
    至少一个发光单元；以及
    如权利要求1至10任一项所述的防蓝光器件，所述防蓝光器件位于所述至少一个发光单元的出光侧。
  12. 根据权利要求11所述的发光器件，其特征在于，所述发光器件包括多个所述发光单元，在所述发光单元的出光方向上，多个所述发光单元层叠设置；并且
    所述发光单元中的至少一个发光单元的目标参数值大于或等于第一临界值，且小于或等于第二临界值；所有发光单元的目标参数值之和大于或等于第一总临界值，且小于或等于第二总临界值，所述第一总临界值为所述第一临界值与发光单元数量的乘积，所述第二总临界值为所述第二临界值与发光单元数量的乘积，所述目标参数值为本征光谱峰值对应的波长、本征光谱半 高宽以及本征光谱目标波长的强度中的至少一者。
  13. 根据权利要求12所述的发光器件，其特征在于，在所述目标参数值为所述本征光谱峰值对应的波长的情况下，所述第一临界值为第一波长，所述第一波长大于或等于455nm，且小于或等于465nm；所述第二临界值为第二波长，所述第二波长大于或等于465nm，且小于或等于475nm。
  14. 根据权利要求12所述的发光器件，其特征在于，在所述目标参数值为所述本征光谱半高宽的情况下，所述第一临界值为第一半高宽，所述第一半高宽大于或等于5nm，且小于或等于15nm；所述第二临界值为第二半高宽，所述第二半高宽大于或等于25nm，且小于或等于35nm。
  15. 根据权利要求12所述的发光器件，其特征在于，所述目标波长为450nm，在所述目标参数值为所述本征光谱目标波长的强度的情况下，所述第一临界值为第一强度，所述第一强度大于或等于0，且小于或等于0.1；所述第二临界值为第二强度，所述第二强度大于或等于0.25，且小于或等于0.4。
  16. 根据权利要求11所述的发光器件，其特征在于，所述发光器件还包括：
    第一电极以及第二电极，所述至少一个发光单元位于所述第一电极与所述第二电极之间，所述防蓝光器件设置在所述第二电极背离所述第一电极的一侧。
  17. 根据权利要求16所述的发光器件，其特征在于，所述第二电极的厚度大于或等于12nm。
  18. 根据权利要求16所述的发光器件，其特征在于，所述发光器件还包括：
    光耦合层，所述光耦合层设置在所述第二电极与所述防蓝光器件之间。
  19. 根据权利要求18所述的发光器件，其特征在于，所述光耦合层的折射率与所述光耦合层的厚度的乘积大于或等于150。
  20. 一种显示装置，其特征在于，所述显示装置包括衬底基板，以及设置在所述衬底基板上的多个如权利要求11至19任一项所述的发光器件。
PCT/CN2024/094044 2023-06-30 2024-05-17 一种防蓝光器件、发光器件以及显示装置 Ceased WO2025001622A1 (zh)

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CN116648115A (zh) * 2023-06-30 2023-08-25 京东方科技集团股份有限公司 一种防蓝光器件、发光器件以及显示装置
CN120529750A (zh) * 2025-03-26 2025-08-22 京东方科技集团股份有限公司 显示面板以及显示装置

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JP2007011104A (ja) * 2005-07-01 2007-01-18 National Institute Of Information & Communication Technology 光線制御装置及びそれを用いた立体像表示装置
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