WO2024262278A1 - 電子装置 - Google Patents

電子装置 Download PDF

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Publication number
WO2024262278A1
WO2024262278A1 PCT/JP2024/019857 JP2024019857W WO2024262278A1 WO 2024262278 A1 WO2024262278 A1 WO 2024262278A1 JP 2024019857 W JP2024019857 W JP 2024019857W WO 2024262278 A1 WO2024262278 A1 WO 2024262278A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
thickness direction
insulating layer
main surface
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/019857
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English (en)
French (fr)
Japanese (ja)
Inventor
寛之 新開
弘規 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to CN202480039790.6A priority Critical patent/CN121336531A/zh
Priority to JP2025527647A priority patent/JPWO2024262278A1/ja
Publication of WO2024262278A1 publication Critical patent/WO2024262278A1/ja
Priority to US19/422,062 priority patent/US20260107814A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/823—Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed

Definitions

  • This disclosure relates to electronic devices.
  • Patent Document 1 discloses a semiconductor device as an example of a conventional electronic device.
  • the semiconductor device described in Patent Document 1 comprises a substrate having a substrate main surface, a semiconductor element disposed on the substrate main surface, a wiring portion, a substrate metal layer, and a sealing resin.
  • the sealing resin covers the substrate main surface and the semiconductor element.
  • heat generated when an electronic element is energized be quickly dissipated to the outside of the electronic device.
  • An electronic device includes a substrate having an insulating layer having an insulating layer main surface facing a first side in the thickness direction and an insulating layer back surface facing a second side opposite to the insulating layer main surface, and a conductive portion exposed from the insulating layer main surface and the insulating layer back surface, an electronic element having an element body including an element main surface facing the insulating layer main surface in the thickness direction and a plurality of electrodes arranged on the element main surface, the plurality of electrodes being electrically connected to the conductive portion, a columnar portion protruding from the conductive portion to the first side in the thickness direction in the thickness direction, and a sealing resin covering the insulating layer main surface, the electronic element, and the columnar portion.
  • FIG. 1 is a plan view showing an electronic device according to a first embodiment.
  • FIG. 2 is a partial plan view showing the semiconductor device shown in FIG.
  • FIG. 3 is a partial plan view showing the semiconductor device shown in FIG.
  • FIG. 4 is a front view showing the electronic device according to the first embodiment.
  • FIG. 5 is a bottom view showing the electronic device according to the first embodiment.
  • FIG. 6 is a left side view showing the electronic device according to the first embodiment.
  • FIG. 7 is a right side view showing the electronic device according to the first embodiment.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 9 is a partially enlarged cross-sectional view of a part of FIG. FIG.
  • FIG. 10 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 11 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 12 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 13 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG. FIG.
  • FIG. 14 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 15 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 16 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 17 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG. FIG.
  • FIG. 18 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 19 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 20 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 21 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG. FIG.
  • FIG. 22 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 23 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 24 is a cross-sectional view showing a step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.
  • FIG. 25 is a cross-sectional view showing a first modified example of the electronic device according to the first embodiment.
  • FIG. 26 is a cross-sectional view showing a second modified example of the electronic device according to the first embodiment.
  • FIG. 27 is a cross-sectional view showing a third modified example of the electronic device according to the first embodiment.
  • FIG. 28 is a plan view showing a fourth modified example of the electronic device according to the first embodiment.
  • FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG.
  • FIG. 30 is a plan view showing a fifth modified example of the electronic device according to the first embodiment.
  • FIG. 31 is a plan view showing a sixth modified example of the electronic device according to the first embodiment.
  • FIG. 32 is a partial plan view showing an electronic device according to the second embodiment.
  • 33 is a cross-sectional view taken along line XXXIII-XXXIII in FIG. 32.
  • FIG. 34 is a partially enlarged cross-sectional view of a portion of FIG.
  • FIG. 35 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 36 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 37 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 38 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG. FIG.
  • FIG. 39 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 40 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 41 is a partially enlarged cross-sectional view showing a first modified example of the electronic device according to the second embodiment.
  • FIG. 42 is a cross-sectional view showing a step of the manufacturing method of the first modified example of the electronic device according to the second embodiment, and corresponds to the cross section of FIG. FIG.
  • FIG. 43 is a cross-sectional view showing a step of the manufacturing method of the first modified example of the electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • FIG. 44 is a cross-sectional view showing a step of the manufacturing method of the first modified example of the electronic device according to the second embodiment, and corresponds to the cross section of FIG.
  • an object A is formed on an object B
  • an object A is formed on (an object B)
  • an object A is formed directly on an object B
  • an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on (an object B)” include “an object A is disposed directly on an object B” and “an object A is disposed on (an object B) with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is located on (an object B)
  • an object A is in contact with an object B and is located on (an object B)” and “an object A is located on (an object B) with another object interposed between the object A and the object B.
  • an object A overlaps an object B includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B”, unless otherwise specified.
  • an object A (its material) contains an object C” includes “an object A (its material) is made of material C” and “an object A (its material) is mainly made of material C”.
  • a face A faces in a certain direction B (to one side or the other) is not limited to an angle of face A to direction B of 90 degrees, but includes an angle of face A to direction B that is tilted.
  • FIGS 1 to 9 show an electronic device A10 according to a first embodiment.
  • the electronic device A10 comprises an insulating layer 2, a conductive portion 3, an electronic element 4, a columnar portion 5, and a sealing resin 7.
  • the electronic device A10 comprises a metal layer 6 as an auxiliary function.
  • the electronic device A10 is a device that is surface mounted on a wiring board of an electronic device, an electric vehicle, or the like.
  • the electronic device A10 is a leadless package type, and in particular a QFN package (Quad Flat Non-leaded Package) type.
  • the electronic device A10 is rectangular in plan view.
  • the thickness direction z corresponds to the thickness direction of the electronic device A10.
  • one side of the thickness direction z may be referred to as the upper side, which corresponds to the first side of this disclosure.
  • the other side of the thickness direction z may be referred to as the lower side, which corresponds to the second side of this disclosure.
  • the terms "upper”, “lower”, “upper”, “lower”, “top surface”, and “bottom surface” indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity.
  • Plant view refers to the case when viewed in the thickness direction z.
  • the electronic element 4 is a semiconductor element, for example an integrated circuit such as an LSI. Unlike this example, the electronic element 4 may be a voltage control element such as an LDO (Low Drop Out), an amplification element such as an operational amplifier, or a discrete element such as a transistor or diode.
  • the electronic element is rectangular in plan view.
  • the electronic element 4 is connected to the junction 49.
  • the electronic element 4 overlaps with the junction 49 in plan view.
  • the electronic element 4 has an element body 40.
  • the element body 40 is mainly composed of, for example, a semiconductor material, a metal material, etc.
  • the element body 40 has an element main surface 41, an element rear surface 42, and an element side surface 43.
  • the element main surface 41 and the element rear surface 42 are separated in the thickness direction z.
  • the element main surface 41 and the element rear surface 42 face in opposite directions.
  • the element side surface 43 is located between the element main surface 41 and the element rear surface 42 in the thickness direction z. In this embodiment, the element side surface 43 faces the first direction x or the second direction y.
  • the element main surface 41 and the element side surface 43 are covered with a sealing resin.
  • the electronic element 4 has an element body 40 and a plurality of electrodes 47.
  • the element body 40 includes a semiconductor material.
  • the plurality of electrodes 47 are electrically connected to a circuit (not shown) configured in the element body 40.
  • the element main surface 41 corresponds to the lower surface (the surface facing downward in the thickness direction z) of the element body 40.
  • each electrode 47 protrudes downward in the thickness direction z from the element main surface 41, but may be flush with the element main surface 41 or may be recessed upward in the thickness direction z from the element main surface 41.
  • the element main surface 41 is partially covered with an insulating film (not shown), and each electrode 47 is exposed from the insulating film.
  • the insulating film includes, for example, polyimide or polybenzoxazole.
  • Each electrode 47 includes a metal material.
  • the metal material is, for example, aluminum, silver, gold, or copper.
  • Each electrode 47 may have a single-layer structure or a multi-layer laminate structure.
  • the substrate 1 is a support that supports the electronic element 4.
  • the substrate 1 includes an insulating layer 2 and a conductive portion 3.
  • the insulating layer 2 supports the electronic element 4.
  • the insulating layer 2 includes, for example, a resin material.
  • the resin material is, for example, the same as the sealing resin 7, but may be different from the sealing resin 7.
  • the insulating layer 2 may be composed of a single crystal intrinsic semiconductor (for example, silicon (Si)) instead of a resin material, may be composed of glass, or may be composed of ceramic.
  • the insulating layer 2 is rectangular in plan view.
  • the thickness of the insulating layer 2 (dimension along the thickness direction z) is not limited in any way, but is, for example, 30 ⁇ m or more and 300 ⁇ m or less.
  • the insulating layer 2 includes an insulating layer main surface 21, an insulating layer back surface 22, two insulating layer side surfaces 23, and two insulating layer side surfaces 24.
  • the insulating layer main surface 21 and the insulating layer back surface 22 are spaced apart in the thickness direction z.
  • the insulating layer main surface 21 and the insulating layer back surface 22 face in opposite directions.
  • the insulating layer main surface 21 is the upper surface of the insulating layer 2
  • the insulating layer back surface 22 is the lower surface of the insulating layer 2.
  • the insulating layer main surface 21 faces the electronic element 4.
  • the insulating layer back surface 22 faces the circuit board when the electronic device A10 is mounted on the circuit board.
  • each insulating layer side surface 23 and each insulating layer side surface 24 is sandwiched between the insulating layer main surface 21 and the insulating layer back surface 22.
  • Each insulating layer side surface 23 and each insulating layer side surface 24 includes an upper end in the thickness direction z that connects to the insulating layer main surface 21, and a lower end in the thickness direction z that connects to the insulating layer rear surface 22.
  • the two insulating layer side surfaces 23 are a pair of side surfaces that face each other in the x direction.
  • the two insulating layer side surfaces 24 are a pair of side surfaces that face each other in the y direction, and are in contact with the two insulating layer side surfaces 23, respectively.
  • the multiple joints 49 join the conductive portion 3 and the electronic element 4.
  • the joints 49 are a conductive joining material.
  • the joints 49 include a barrier metal 491 and a solder layer 492.
  • the solder layer 492 includes an alloy that contains tin (Sn) in its composition (e.g., an Sn-silver (Ag) alloy), and also contains flux. Note that the composition of the joints 49 is not limited to this example and can be changed within a reasonable range.
  • Each joint 49 is interposed between one of the multiple electrodes 47 of the electronic element 4 and the conductive portion 3, and joins them together. This allows the electronic element 4 to be electrically connected to the conductive portion 3 via the multiple joints 49.
  • the conductive portion 3 is a conductor disposed inside the electronic device A10.
  • the conductive portion 3 includes a plurality of terminal portions 31 and a plurality of wiring portions 32.
  • each wiring portion 32 includes a wiring portion main surface 321 and a wiring portion back surface 322.
  • the wiring portion main surface 321 and the wiring portion back surface 322 are spaced apart in the thickness direction z.
  • the wiring portion main surface 321 and the wiring portion back surface 322 face opposite each other.
  • the wiring portion main surface 321 is the upper surface of the wiring portion 32
  • the wiring portion back surface 322 is the lower surface of the wiring portion 32.
  • the wiring portion 32 has, for example, a seed layer 3201 and a plating layer 3202.
  • the seed layer 3201 is formed on the insulating layer main surface 21 and contacts the insulating layer 2.
  • the seed layer 3201 contains, for example, titanium.
  • the plating 3202 layer is laminated on the seed layer 3201.
  • the plating layer 3202 contains, for example, copper. Unlike this configuration, the wiring portion 32 may be a single layer made of a conductor.
  • the thickness of the wiring portion 32 is not limited in any way, but is, for example, 10 ⁇ m or more and 100 ⁇ m or less.
  • the multiple terminal portions 31 penetrate the insulating layer 2 in the thickness direction z.
  • Each terminal portion 31 is connected to the wiring portion 32 and each of the multiple conductor films 315, and electrically connects the wiring portion 32 and each conductor film 315.
  • the terminal portion 31 includes, for example, a metal material.
  • the metal material is not limited in any way, but is, for example, copper.
  • the planar shape of the terminal portion 31 is not limited in any way, but in the illustrated example, it is rectangular. In the illustrated example, the upper surface (terminal portion main surface 311) of each terminal portion 31 is flush with the insulating layer main surface of the insulating layer 2.
  • Each terminal portion 31 has a terminal portion main surface 311, a terminal portion back surface 312, and a terminal portion side surface 313.
  • the terminal portion main surface 311 faces upward in the thickness direction z.
  • the terminal portion back surface 312 faces downward in the thickness direction z.
  • the upper end of the terminal portion side surface 313 in the thickness direction z is connected to the terminal portion main surface 311, and the lower end of the terminal portion side surface 313 in the thickness direction z is connected to the terminal portion back surface 312.
  • the terminal portion back surface 312 may be exposed from the insulating layer back surface 22 of the insulating layer 2. As shown in FIG. 9, the terminal portion back surface 312 is, for example, flush with the insulating layer back surface 22.
  • the multiple conductor films 315 are conductive to the multiple wiring sections 32, respectively, and are conductive films exposed to the outside of the electronic device A10.
  • Each conductor film 315 has a lower conductor film 3152 in contact with the rear surface 312 of the terminal section.
  • the conductor film 315 may have a side conductor film 3151 in contact with the side surface 313 of the terminal section.
  • the conductor film 315 connects the electronic device A10 to the circuit board when the electronic device A10 is mounted on the circuit board.
  • the conductor film 315 protrudes from the rear surface 22 of the insulating layer.
  • the conductor film 315 is formed, for example, by electroless plating.
  • the conductor film 315 is composed of multiple metal layers stacked in this order from the side in contact with the terminal section 31, for example, a Ni layer, a palladium (Pd) layer, and a gold (Au) layer.
  • the conductor film 315 may be made of multiple metal layers stacked in the order of a Ni layer and an Au layer from the side in contact with the terminal portion 31, or multiple metal layers stacked in the order of a Cu layer, an Ag layer, and an Sn layer.
  • the material and method of forming the conductor film 315 are not limited to these examples.
  • the multiple columnar parts 5 are arranged in a direction in which the insulating layer main surface 21 faces the insulating layer 2.
  • the columnar parts 5 are arranged on the wiring part 32 of the conductive part 3 and protrude upward in the thickness direction z from the wiring part 32.
  • the shape of the columnar parts 5 in a plan view is not limited in any way, but in the illustrated example, it is a rectangle extending in the second direction y.
  • the columnar parts 5 are conductive and include, for example, a metal material.
  • the metal material is, for example, copper.
  • the columnar parts 5 are formed, for example, by electrolytic plating.
  • the size of the columnar parts 5 in the thickness direction z may be larger or smaller than the thickness of the electronic element 4.
  • the columnar parts 5 are formed so as to penetrate the resin main surface 71 in the thickness direction z.
  • the shape and size of the cross section of the columnar parts 5 perpendicular to the thickness direction z are approximately the same over the entire length of the thickness direction z, but are not limited to this. Either or both of the shape and size of the cross section of the columnar parts 5 perpendicular to the thickness direction z may be configured to be different in each part of the thickness direction z.
  • Each columnar portion 5 has a columnar portion main surface 51, a columnar portion back surface 52, and a columnar portion side surface 53.
  • the columnar portion main surface 51 faces upward in the thickness direction z.
  • the columnar portion back surface 52 faces downward in the thickness direction z.
  • the upper end of the columnar portion side surface 53 in the thickness direction z is connected to the columnar portion main surface 51, and the lower end of the columnar portion side surface 53 in the thickness direction z is connected to the columnar portion back surface 52.
  • the terminal portion back surface 312 is flush with, for example, the insulating layer back surface 22.
  • the metal layer 6 is disposed on the element rear surface 42.
  • the metal layer 6 may have a metal layer main surface 61, a metal layer rear surface 62, and a metal layer side surface 63.
  • the metal layer main surface 61 faces upward in the thickness direction z.
  • the metal layer rear surface 62 faces downward in the thickness direction z.
  • the upper end of the metal layer side surface 63 in the thickness direction z is connected to the metal layer main surface 61, and the lower end of the metal layer side surface 63 in the thickness direction z is connected to the metal layer rear surface 62.
  • the metal layer 6 is disposed on the electronic element 4 and the multiple columnar portions 5.
  • the sealing resin 7 is a synthetic resin whose main component is, for example, a black epoxy resin.
  • the sealing resin 7 may be a mixture of the epoxy resin and a filler such as silica.
  • the sealing resin 7 covers the electronic element 4 and the multiple columnar sections 5.
  • the sealing resin 7 also covers a part of the insulating layer 2, the multiple joint sections 49, and the multiple wiring sections 32.
  • the sealing resin 7 is formed on the insulating layer main surface 21.
  • the sealing resin is rectangular in plan view.
  • the thickness of the sealing resin 7 (dimension along the thickness direction z) is not limited in any way, but is, for example, 200 ⁇ m or more and 1200 ⁇ m or less.
  • the sealing resin 7 has a resin main surface 71, a resin back surface 72, and multiple resin side surfaces 73.
  • the resin main surface 71 and the resin back surface 72 are spaced apart in the thickness direction z.
  • the resin main surface 71 and the resin back surface 72 face opposite each other in the thickness direction z.
  • the resin main surface 71 faces the same direction as the element back surface 42 of the electronic element 4 and the insulating layer main surface 21 in the thickness direction z.
  • a part of the electronic element 4 is disposed on the resin back surface 72.
  • the resin back surface 72 faces the same direction as the element main surface 41 of the electronic element 4 and the insulating layer back surface 22 in the thickness direction z.
  • the resin back surface 72 is in contact with the insulating layer main surface 21.
  • the resin back surface has projections and recesses according to the shape of the wiring portion 32. As shown in FIGS.
  • each of the multiple resin side surfaces 73 is sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z and is connected to them.
  • the multiple resin side surfaces 73 include those facing in one direction of the first direction x, those facing in the other direction of the first direction x, those facing in one direction of the second direction y, and those facing in the other direction of the second direction y.
  • FIG. 10 to 24 is a cross-sectional view showing one step in the manufacturing method for the electronic device A10. These cross-sectional views correspond to the cross section shown in Figure 8.
  • a support substrate 81 is prepared, and a plurality of columns 82 are formed on the support substrate 81.
  • the support substrate 81 includes, for example, a single crystal intrinsic semiconductor material.
  • the semiconductor material is, for example, Si.
  • a silicon wafer is prepared as the support substrate 81.
  • the support substrate 81 has a support substrate main surface 81a and a support substrate back surface 81b that face opposite each other in the thickness direction z.
  • the plurality of columns 82 are formed, for example, by the following process. First, a seed layer is formed on the support substrate main surface 81a.
  • the seed layer is formed, for example, by a sputtering method.
  • a resist is patterned on the seed layer, and a plurality of columns 82 are formed by electrolytic plating. After that, the resist layer and unnecessary seed layer are removed. Through these processes, a plurality of columns 82 are formed on the support substrate main surface 81a of the support substrate 81.
  • the specific shape and size of the columns 82 are not limited in any way.
  • an insulating layer 2 is formed on the support substrate main surface 81a of the support substrate 81 to cover the multiple pillars 82.
  • the insulating layer 2 is, for example, a synthetic resin whose main component is black epoxy resin.
  • the insulating layer 2 is formed, for example, by molding.
  • the insulating layer 2 may be made of other insulating resin materials instead of synthetic resin.
  • the insulating layer 2 has an insulating layer main surface 21 and an insulating layer back surface 22 that face in opposite directions in the thickness direction z.
  • the insulating layer main surface 21 faces the same direction as the support substrate main surface 81a, and the insulating layer back surface 22 faces the support substrate main surface 81a. When the insulating layer 2 is formed, it completely covers the multiple pillars 82.
  • the insulating layer 2 is ground to form a plurality of terminal portions 31.
  • the insulating layer 2 is ground downward in the thickness direction z from the insulating layer main surface 21 until the pillars 82 are exposed from the insulating layer main surface 21.
  • the grinding method is not particularly limited.
  • the insulating layer 2 may also be thinned by a method other than grinding.
  • a plurality of terminal portions 31 are formed from the plurality of pillars 82.
  • the formed terminal portion 31 includes the above-mentioned ground terminal portion 31A, corner terminal portion 31B, and center terminal portion 31C. In the thickness direction z, the center terminal portion 31C is arranged so as to overlap with the electronic element.
  • the wiring portion 32 is formed, for example, by the following process.
  • the above-mentioned seed layer 3201 is formed on the insulating layer main surface 21 and the terminal portion 31.
  • the seed layer 3201 is formed, for example, by a sputtering method.
  • a Ti (titanium) layer and a Cu (copper) layer are laminated in this order as the seed layer.
  • a resist is patterned on the seed layer 3201, and the above-mentioned plating layer 3202 is formed by electrolytic plating.
  • the plating layer 3202 contains Cu (copper).
  • the resist layer and unnecessary seed layer 3201 seed layer 3201 exposed from the plating layer 3202 are removed. Through these processes, the wiring portion 32 is formed.
  • each barrier metal 491 contains a metal different from that of the wiring portion 32, for example, Ni (nickel).
  • a solder paste as the solder layer 492 is formed on the corresponding barrier metal 491 by screen printing.
  • the method of forming the barrier metal 491 and the solder layer 492 is not limited in any way, but may be, for example, by electrolytic plating. A new seed layer that becomes a conductive path may be formed by the electrolytic plating, or the seed layer 3201 formed in the step of forming the wiring portion 32 may be used without removing the seed layer 3201.
  • the barrier metal 491 and the solder layer 492 are each formed in the area where the electronic element 4 is to be bonded.
  • the columnar portion 5 includes a metal material, which is, for example, Cu (copper).
  • the columnar portion 5 is formed, for example, by electrolytic plating. In this electrolytic plating, a seed layer that serves as a conductive path may be newly formed, or the seed layer 3201 formed in the process of forming the wiring portion 32 may be used without removing the seed layer 3201.
  • the electronic element 4 is placed and bonded.
  • the multiple electrodes 47 of the electronic element 4 are matched to the multiple solder layers 492.
  • reflow is performed with the electronic element 4 placed. The heat from this reflow melts the solder layer 492. The melted solder layer 492 is then cooled. This solidifies the solder layer 492 and bonds the electronic element 4.
  • the electronic element 4 is flip-chip mounted with the element main surface 41 facing the wiring portion 32.
  • the sealing resin 7 is formed.
  • the sealing resin 7 is formed above the insulating layer 2 so as to cover the electronic element 4, the wiring portion 32, and the columnar portion 5.
  • the sealing resin 7 is formed, for example, by molding.
  • the sealing resin 7 is a synthetic resin whose main component is, for example, a black epoxy resin.
  • the sealing resin 7 may be other insulating resin materials instead of the synthetic resin.
  • the sealing resin 7 has a resin main surface 71 facing upward in the thickness direction z and a resin back surface 72 facing downward in the z direction.
  • the sealing resin 7 may be ground downward in the thickness direction z from the resin main surface 71 until the element back surface 42 and the columnar portion main surface 51 are exposed.
  • the grinding method is not particularly limited. Also, for example, the sealing resin 7 may be thinned by a method other than grinding, such as a chemical method.
  • the metal layer 6 is formed.
  • the metal layer 6 may be formed so as to connect to both the element back surface 42 and the columnar portion main surface 51.
  • the metal layer 6 includes a metal material, and the metal material is, for example, Cu (copper).
  • the metal layer 6 is formed, for example, by electrolytic plating. The formation of this metal layer 6 is not required.
  • the support substrate 81 is removed.
  • the support substrate 81 is ground from the back surface 81b side of the support substrate. By continuing the grinding even after the support substrate 81 is removed, the insulating layer 2 and the terminal portion 31 may be thinned.
  • the sealing resin 7 and the insulating layer 2 are cut along the cutting line CL1 from the insulating layer back surface 22 side to a portion of the sealing resin 7.
  • the sealing resin 7 and the insulating layer 2 are cut by cutting using, for example, a dicing blade.
  • a groove portion 83 is formed in a portion of the sealing resin 7 and in the insulating layer 2 as shown in FIG. 22.
  • Each conductor film 315 has a lower conductor film 3152 that contacts the rear surface 312 of the terminal portion described above.
  • Each conductor film 315 may have a side conductor film 3151 that contacts the side surface 313 of the terminal portion described above.
  • the sealing resin 7 and the metal layer 6 are cut along the cutting line CL2.
  • the sealing resin 7 and the metal layer 6 are cut by cutting using, for example, a dicing blade. As a result, the sealing resin 7 and the metal layer 6 are divided along the cutting line CL2.
  • the electronic device A10 shown in Figures 1 to 9 is manufactured. Note that the manufacturing method for the electronic device A10 is not limited to the above example.
  • the columnar portion 5 protrudes upward in the thickness direction z from the conductive portion 3. This makes it easier for heat transferred from the electronic element 4 to the sealing resin 7 to be transferred to the conductive portion 3 via the columnar portion 5. This allows the heat generated from the electronic element 4 to be released to the outside more quickly. Furthermore, the columnar portion main surface 51 is formed so as to penetrate the resin main surface 71 in the thickness direction z. This allows the heat generated from the electronic element 4 to be released to the outside more quickly.
  • the metal layer back surface 62 of the metal layer 6 is formed so as to contact the columnar portion main surface 51 and the element back surface 42 in the thickness direction z. This allows heat generated in the electronic element 4 to be dissipated via the metal layer 6, the columnar portion 5, and the wiring portion 32, for example, to a mounting board (not shown) on which the electronic device A10 is mounted. Therefore, with this configuration, the heat dissipation properties of the electronic device A10 can be further improved.
  • the columnar portion 5 is electrically connected to the ground terminal portion 31A.
  • the ground line to which the ground terminal portion 31A is connected generally has a large area and is easy to transfer heat to. This can promote heat dissipation from the electronic element 4.
  • the columnar portion 5 is also electrically connected to the center terminal portion 31C.
  • the center terminal portion 31C has the largest area of the multiple terminal portions 31. This configuration is therefore advantageous in promoting heat dissipation from the electronic element 4.
  • the electronic device A10 comprises an electronic element 4, an insulating layer 2, and a columnar portion 5.
  • the insulating layer 2 has an insulating layer main surface 21 that supports the electronic element 4.
  • the columnar portion 5 is disposed on the insulating layer main surface 21 (in the direction in which the insulating layer main surface 21 faces the insulating layer 2). In this configuration, the columnar portion 5 functions as an electromagnetic shield. This makes it possible to prevent the electronic element 4 from being subjected to electromagnetic noise from the outside. Therefore, with this configuration, it is possible to improve the operational reliability of the electronic device A10.
  • FIGS. 25 to 44 show modified examples and other embodiments of the present disclosure.
  • elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals as in the above-described embodiment.
  • the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate to the extent that no technical contradictions arise.
  • FIG. 25 shows a first modified example of electronic device A10.
  • the configuration of the columnar portion 5 of electronic device A11 of this modified example is different from that of electronic device A10.
  • the columnar portion 5 is exposed from the sealing resin 7 in the x direction.
  • a columnar portion 5 is formed by forming a columnar portion 5 that is larger in the x direction than the columnar portion 5 shown in FIG. 15, for example.
  • the columnar portion 5 is formed so that it overlaps the terminal portion 31 (ground terminal portion 31A in the figure) when viewed in the thickness direction z. Then, in the process shown in FIGS. 21 and 24, cutting is performed to remove a portion of the columnar portion 5.
  • the side conductor film 3151 of the conductor film 315 may be formed on a portion of the columnar portion 5.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly.
  • the columnar portion 5 may be exposed from the sealing resin 7 in the x direction or y direction.
  • FIG. 26 shows a second modified example of the electronic device A10.
  • the relationship between the electronic element 4 and the metal layer 6 of the electronic device A12 of this modified example is different from that of the above-mentioned example.
  • sealing resin 7 is interposed between element rear surface 42 of electronic element 4 and metal layer rear surface 62 of metal layer 6.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly.
  • the electronic device of the present disclosure is not limited to a configuration in which the electronic element 4 and the metal layer 6 are in contact with each other.
  • FIG. 27 shows a third modified example of the electronic device A10.
  • the electronic device A13 of this modified example does not have the metal layer 6 described above.
  • the resin main surface 71 of the sealing resin 7 is exposed upward in the z direction.
  • the element back surface 42 of the electronic element 4 and the columnar portion main surface 51 of the columnar portion 5 are covered by the sealing resin 7, but this is not limited thereto. At least one of the element back surface 42 and the columnar portion main surface 51 may be exposed from the resin main surface 71 of the sealing resin 7.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly.
  • the electronic device of the present disclosure may be configured without including the metal layer 6.
  • the metal layer 6 has an uneven portion 65.
  • the uneven portion 65 is formed on the upper side of the metal layer 6 in the z direction.
  • the uneven portion 65 includes a plurality of convex portions 651.
  • Each of the plurality of convex portions 651 protrudes upward in the z direction from the metal layer main surface 61.
  • the size of the uneven portion 65 in the thickness direction z is not limited in any way, and is, for example, 3 ⁇ m or more and 100 ⁇ m or less.
  • the shape and size of the multiple protrusions 651 are not limited in any way.
  • the multiple protrusions 651 are each rectangular when viewed in the thickness direction z, but they may be circular, elliptical, polygonal, etc.
  • the arrangement of the multiple protrusions 651 is not limited in any way, and in this example, they are arranged in a matrix along the first direction x and the second direction y.
  • the method for forming the uneven portion 65 is not limited in any way.
  • the uneven portion 65 (multiple protrusions 651) may be further formed by further performing electrolytic plating or the like.
  • the thickness of the metal layer 6 in FIG. 19 in the thickness direction z may be made thicker, and the uneven portion 65 (multiple protrusions 651) may be formed by, for example, etching this metal layer 6.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly. Furthermore, in this modified example, an uneven portion 65 is formed on the metal layer 6. This increases the surface area of the metal layer 6 in the thickness direction z. Therefore, this configuration is suitable for improving the heat dissipation properties of the electronic device A14.
  • FIG. 30 shows a fifth modified example of electronic device A10.
  • This modified example of electronic device A15 differs from electronic device A14 in the configuration of the multiple protrusions 651.
  • each of the multiple protrusions 651 extends in the second direction y and reaches both ends of the metal layer 6 in the second direction y.
  • the multiple protrusions 651 are parallel to each other and are spaced apart from each other in the first direction x.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly. Furthermore, as can be understood from this modified example, the specific configuration of the uneven portion 65 (plurality of protrusions 651) is not limited in any way.
  • FIG. 31 shows a sixth modified example of the electronic device A10.
  • the electronic device A16 of this modified example has a different configuration of the multiple protrusions 651 from the above-described examples.
  • each of the multiple protrusions 651 is circular when viewed in the thickness direction z.
  • the multiple protrusions 651 are also arranged in a matrix, and the positions in the second direction y of adjacent protrusions 651 in the first direction x are different from each other.
  • This modified example also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly. Furthermore, as can be understood from this modified example, the specific configuration of the uneven portion 65 (plurality of protrusions 651) is not limited in any way.
  • FIGS. 32 to 34 show an electronic device A20 according to a second embodiment.
  • the configuration of the columnar portion 5 differs from that of the above-described embodiment.
  • the columnar portion 5 of this embodiment has a tapered portion 54.
  • the tapered portion 54 is connected to the wiring portion 32.
  • the tapered portion 54 is the lower end portion of the columnar portion 5 in the thickness direction z.
  • the cross section of the tapered portion 54 perpendicular to the thickness direction z becomes smaller from the top (first side) to the bottom (second side) in the thickness direction z.
  • the size of the tapered portion 54 in the first direction x becomes smaller from the top (first side) to the bottom (second side) in the thickness direction z.
  • the shape of the portion of the columnar portion 5 located above the tapered portion 54 in the thickness direction z is not limited in any way. In the illustrated example, the shape and size of the cross section perpendicular to the thickness direction z of this portion are constant.
  • the tapered portion 54 is connected to at least one of the wiring portions 32.
  • the tapered portion 54 is connected to the wiring portion 32 that is conductive to the ground terminal portion 31A.
  • the conductive portion 3 of the electronic device A20 also includes two ground terminal portions 31D.
  • the two ground terminal portions 31D are arranged on either side of the multiple ground terminal portions 31A in the second direction y.
  • the tapered portion 54 is also connected to the wiring portion 32 that is conductive to the two ground terminal portions 31D.
  • the tapered portion 54 penetrates the wiring portion 32 and reaches the terminal portion 31.
  • the tapered portion 54 may reach only the wiring portion 32, or may penetrate the wiring portion 32 and reach the terminal portion 31.
  • the columnar portion 5 crosses the electronic device A20 in the second direction y, reaching both ends in the second direction y.
  • the shape and size of the cross section of the columnar portion 5 perpendicular to the second direction y are approximately constant.
  • the sealing resin 7 is cut along the cutting line CL3.
  • This cutting is performed, for example, by cutting using a dicing blade.
  • a tapered portion is provided on the outer periphery of the dicing blade.
  • the lower end portion of the cutting line CL3 in the thickness direction z corresponds to the shape of this tapered portion.
  • the cutting line CL3 penetrates the wiring portion 32 and reaches the terminal portion 31. It is sufficient that the cutting line CL3 reaches the wiring portion 32, and it is not necessary for it to reach the terminal portion 31.
  • the cutting along the cutting line CL3 is performed over the entire area in the second direction y.
  • the groove portion 84 shown in FIG. 36 is formed by cutting along the cutting line CL3.
  • the groove portion 84 opens to the resin main surface 71 and is recessed downward in the thickness direction z from the resin main surface 71.
  • the groove portion 84 reaches the wiring portion 32. In the illustrated example, the groove portion 84 reaches the terminal portion 31.
  • the columnar portion 5 shown in FIG. 37 is formed by filling the groove portion 84 with a conductor.
  • the method for filling the groove portion 84 with the conductor is not limited in any way.
  • a metal layer that serves as a seed layer may be formed on the inner surface of the groove portion 84 by sputtering or the like, and then the groove portion 84 may be filled with Cu (copper), which is an example of a conductor, by electrolytic plating or the like. Since the columnar portion 5 is formed corresponding to the shape of the groove portion 84, in the illustrated example, a tapered portion 54 is formed in the columnar portion 5.
  • the sealing resin 7 and the columnar portion 5 are cut from above in the thickness direction z. This causes the element back surface 42 to be exposed from the resin main surface 71.
  • a metal layer 6 is formed. Note that in FIG. 35 to FIG. 39, the support substrate 81 shown in FIG. 10 to FIG. 19 is not shown, but the manufacturing method may use the support substrate 81 in the same manner as in FIG. 10 to FIG. 19.
  • the substrate 1 and the sealing resin 7 are cut along the cutting line CL1 shown in FIG. 39.
  • a conductor film 315 is formed and cut along the cutting line CL2.
  • the electronic device A20 is obtained.
  • This embodiment also allows the heat generated by the electronic element 4 to be released to the outside more quickly.
  • grooves 84 shown in FIG. 36 are formed by cutting as shown in FIG. 35, and columnar portions 5 are formed by filling grooves 84 with a conductor. This method makes it possible to form relatively large columnar portions 5 at desired positions, which is advantageous for improving heat dissipation.
  • FIG. 41 shows a first modified example of electronic device A20.
  • electronic device A21, the configuration of electronic element 4 and columnar portion 5 differs from the above-described example.
  • the element side surface 43 of the electronic element 4 and the columnar portion side surface 53 of the columnar portion 5 are in contact with each other. There is no sealing resin 7 between the element side surface 43 and the columnar portion side surface 53.
  • the element back surface 42 and the columnar portion main surface 51 are connected to each other so as to be flush with each other.
  • Figures 42 to 44 show an example of a manufacturing method for the electronic device A21. As shown in Figure 42, cutting is performed along the cutting line CL3. In this embodiment, the cutting line CL3 overlaps the sealing resin 7 and the electronic element 4.
  • Cutting along the cutting line CL3 forms the groove 84 shown in FIG. 43. Cutting along the cutting line CL3 cuts out a portion of the electronic element 4. In this cutting, for example, a portion that avoids the functional portion that performs the electrical function of the electronic element 4 is cut out. As a result, the element side surface 43 is exposed in the groove 84 of the electronic element 4.
  • the grooves 84 are filled with a conductor to form the columnar portions 5.
  • the electronic device A21 is obtained by going through the steps shown in FIG. 38 to FIG. 40, for example.
  • This embodiment also allows the heat generated by the electronic element 4 to be dissipated to the outside more quickly. Furthermore, because the electronic element 4 and the columnar portion 5 are in contact with each other, the heat from the electronic element 4 is transferred more efficiently to the columnar portion 5. This is advantageous for improving the heat dissipation properties of the electronic device A21.
  • the electronic device according to the present disclosure is not limited to the above-described embodiment.
  • the specific configuration of each part of the electronic device according to the present invention can be freely designed in various ways.
  • Appendix 1 an insulating layer having an insulating layer main surface facing a first side and an insulating layer back surface facing a second side opposite to the insulating layer main surface in a thickness direction; a conductive portion exposed from a main surface of the insulating layer and a rear surface of the insulating layer;
  • a substrate having an electronic element including an element main body including an element main surface facing the insulating layer main surface in the thickness direction, and a plurality of electrodes arranged on the element main surface, the plurality of electrodes being electrically connected to the conductive portion; a columnar portion protruding from the conductive portion to the first side in the thickness direction and having conductivity; a sealing resin that covers the insulating layer main surface, the electronic element, and the columnar portion;
  • An electronic device comprising: Appendix 2.
  • the element body has an element back surface facing the first side in the thickness direction, 2.
  • the electronic device according to claim 1 wherein in the thickness direction, the columnar portion is formed to the first side beyond a rear surface of the element.
  • Appendix 3. The columnar portion has a columnar portion side surface extending in the thickness direction, The element body has an element side surface extending in the thickness direction, 3.
  • the electronic device according to claim 1, wherein the columnar portion side surface and the element side surface are at least partially in contact with each other.
  • the element body has an element back surface facing the first side in the thickness direction, 4.
  • the electronic device according to claim 1, wherein the electronic element has a metal layer disposed on a rear surface of the element. Appendix 5. 5.
  • the electronic device of claim 4 wherein the metal layer is connected to the columnar portion.
  • Appendix 6. The electronic device according to claim 4, further comprising an insulating film stacked on the first side in the thickness direction of the metal layer.
  • Appendix 7. The conductive portion includes a terminal portion having a terminal back surface exposed from the back surface of the insulating layer; a wiring portion exposed from a main surface of the insulating layer and connecting at least one of the terminal portion and the plurality of electrodes; 2.
  • the electronic device of claim 1, Appendix 8. 8.
  • Appendix 9. 8. The electronic device according to claim 7, wherein a metal film is formed on at least a portion of the terminal portion.
  • Appendix 10 the columnar portion has a tapered portion connected to the wiring portion, 10.
  • Appendix 11 The electronic device according to claim 4 or 5, wherein the metal layer has an uneven portion formed on the first side in the thickness direction.
  • Appendix 12. The electronic device according to claim 11, wherein the uneven portion has a plurality of convex portions aligned in a first direction perpendicular to the thickness direction when viewed in the thickness direction.
  • Appendix 13 12.
  • the electronic device according to claim 11, wherein the plurality of protrusions are arranged in a matrix when viewed in the thickness direction. Appendix 14. 14.
  • the thickness of the concave-convex portion is 3 ⁇ m or more and 100 ⁇ m or less.
  • Appendix 15. 8 The electronic device according to claim 7, wherein the conductive portion includes a plurality of the terminal portions, the plurality of terminal portions including a ground terminal portion for ground connection, and the columnar portion is electrically connected to the ground terminal portion.
  • the insulating layer has a rectangular shape when viewed in the thickness direction, the conductive portion includes a plurality of the terminal portions, the plurality of terminals include a plurality of corner terminals arranged at four corners of the insulating layer, 16.
  • the columnar portion is electrically connected to at least one of the plurality of corner terminal portions.
  • Appendix 17 The electronic device of claim 4, wherein the metal layer comprises copper. Appendix 18. 2. The electronic device of claim 1, wherein the conductive portion comprises copper. Appendix 19. Providing a substrate having an insulating layer and a conductive portion; forming a conductive columnar portion protruding from the conductive portion to a first side in a thickness direction; mounting an electronic element on the substrate; forming a sealing resin to cover the electronic element and the columnar portion; A method for manufacturing an electronic device, comprising: Appendix 20.
  • a method for manufacturing an electronic device comprising: Appendix 21.
  • a part of the sealing resin and a part of the electronic element are removed to form the recess extending through both the electronic element and the sealing resin; 21.

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2024/019857 2023-06-22 2024-05-30 電子装置 Ceased WO2024262278A1 (ja)

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US19/422,062 US20260107814A1 (en) 2023-06-22 2025-12-16 Electronic device

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042977A (ja) * 2005-08-05 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置
JP2009105297A (ja) * 2007-10-25 2009-05-14 Rohm Co Ltd 樹脂封止型半導体装置
US20190096791A1 (en) * 2017-09-28 2019-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packages and methods of forming the same
US20220328374A1 (en) * 2021-04-13 2022-10-13 Western Digital Technologies, Inc. Semiconductor device package having thermally conductive layers for heat dissipation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042977A (ja) * 2005-08-05 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置
JP2009105297A (ja) * 2007-10-25 2009-05-14 Rohm Co Ltd 樹脂封止型半導体装置
US20190096791A1 (en) * 2017-09-28 2019-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packages and methods of forming the same
US20220328374A1 (en) * 2021-04-13 2022-10-13 Western Digital Technologies, Inc. Semiconductor device package having thermally conductive layers for heat dissipation

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