WO2024247579A1 - 半導体装置および車両 - Google Patents

半導体装置および車両 Download PDF

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Publication number
WO2024247579A1
WO2024247579A1 PCT/JP2024/016404 JP2024016404W WO2024247579A1 WO 2024247579 A1 WO2024247579 A1 WO 2024247579A1 JP 2024016404 W JP2024016404 W JP 2024016404W WO 2024247579 A1 WO2024247579 A1 WO 2024247579A1
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Prior art keywords
lead
electrode
semiconductor device
conductive member
bonding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/016404
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English (en)
French (fr)
Japanese (ja)
Inventor
禎将 藤定
光俊 齊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to CN202480033276.1A priority Critical patent/CN121241424A/zh
Priority to DE112024001988.9T priority patent/DE112024001988T5/de
Priority to JP2025523363A priority patent/JPWO2024247579A1/ja
Publication of WO2024247579A1 publication Critical patent/WO2024247579A1/ja
Priority to US19/394,119 priority patent/US20260082945A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/621—Structures or relative sizes of strap connectors
    • H10W72/627—Multiple strap connectors having different structures or shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/631—Shapes of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07652—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/644—Dispositions of strap connectors connecting directly between multiple pads on a chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/646—Dispositions of strap connectors the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/647—Dispositions of multiple strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/647—Dispositions of multiple strap connectors
    • H10W72/6478—Dispositions of multiple strap connectors multiple strap connectors connecting to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/886—Die-attach connectors and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/757—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/767—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink

Definitions

  • This disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in this document comprises multiple leads, a semiconductor element, and multiple conductive members.
  • the multiple conductive members include a metal clip and a wire.
  • the metal clip is joined to an electrode formed on the upper surface of the semiconductor element and to a lead.
  • the wire is joined to an electrode formed on the upper surface of the semiconductor element and to another lead.
  • An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices.
  • an object of the present disclosure is to provide a semiconductor device that is suitable for improving heat dissipation.
  • the semiconductor device provided by the first aspect of the present disclosure includes a first lead having a base, a semiconductor element mounted on one side of the base in the thickness direction and having a first electrode arranged on one side of the thickness direction and a second electrode arranged on the other side of the thickness direction, a second lead arranged at a distance from the base in a first direction perpendicular to the thickness direction, a first conductive member having a first portion joined to the first electrode and a second portion joined to the second lead and conducting to the first electrode and the second lead, a first bonding layer interposed between the base and the second electrode and bonded to both the base and the second electrode, and a second bonding layer interposed between the first electrode and the first portion and bonded to both the first electrode and the first portion.
  • the first bonding layer includes a sintered metal.
  • the vehicle provided by the second aspect of the present disclosure is equipped with a power conversion device configured to include a semiconductor device according to the first aspect of the present disclosure.
  • the above configuration can improve heat dissipation.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a front view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a cross-sectional view taken along line XX in FIG.
  • FIG. 11 is a partially enlarged view of a part of FIG.
  • FIG. 12 is a partially enlarged view of a part of FIG.
  • FIG. 13 is a partially enlarged view of a part of FIG.
  • FIG. 14 is a schematic diagram of a vehicle including the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 15 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 16 is a partially enlarged cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure, and shows a cross section similar to that of FIG. FIG.
  • FIG. 17 is a partial plan view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG.
  • FIG. 19 is a partially enlarged cross-sectional view taken along line XIX-XIX in FIG.
  • FIG. 20 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG.
  • an object A is formed on an object B" and “an object A is formed on an object B” include “an object A is formed directly on an object B” and “an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on an object B” include “an object A is disposed directly on an object B” and “an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B.”
  • a surface A faces in direction B is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, but also includes the case where surface A is tilted with respect to direction B.
  • First embodiment: 1 to 13 show a semiconductor device according to a first embodiment of the present disclosure.
  • the use of the semiconductor device A10 according to this embodiment is not limited in any way, and it is used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter.
  • the semiconductor device A10 includes a first lead 11, a second lead 12, a third lead 13, a fourth lead 14, a semiconductor element 20, a first bonding layer 29, a first conductive member 30, a second bonding layer 38, a third bonding layer 39, a second conductive member 40, a third conductive member 50, and a sealing resin 60.
  • FIG. 1 is a perspective view showing the semiconductor device A10.
  • FIG. 2 is a plan view showing the semiconductor device A10.
  • FIG. 3 is a partial plan view showing the semiconductor device A10.
  • the outer shape of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • FIG. 4 is a bottom view showing the semiconductor device A10.
  • FIG. 5 is a side view showing the semiconductor device A10.
  • FIG. 6 is a front view showing the semiconductor device A10.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3.
  • FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3.
  • FIG. 11 is a partial enlarged view of a part of FIG. 8.
  • FIG. 12 is a partial enlarged view of a part of FIG. 9.
  • FIG. 13 is a partial enlarged view of a part of FIG. 10.
  • the thickness direction of this disclosure is referred to as the "thickness direction z.”
  • a direction perpendicular to the thickness direction z is referred to as the "first direction x.”
  • a direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y.”
  • One side of the thickness direction z is referred to as the “z1 side of the thickness direction z,” and the other side of the thickness direction z is referred to as the “z2 side of the thickness direction z.”
  • One side of the first direction x is referred to as the "x1 side of the first direction x”
  • the other side of the first direction x is referred to as the "x2 side of the first direction x.”
  • One side of the second direction y is referred to as the "y1 side of the second direction y,” and the other side of the second direction y is referred to as the "y2 side of the second direction y.”
  • the first lead 11 has a base 111 and a terminal portion 112.
  • the first lead 11 is a conductive member on which the semiconductor element 20 is mounted and which forms part of the conductive path between the semiconductor element 20 and a wiring board (not shown) on which the semiconductor device A10 is mounted, etc.
  • the first lead 11 includes, for example, copper (Cu) or a copper alloy.
  • the first lead 11 may also have a surface metal layer (not shown).
  • the surface metal layer includes, for example, silver (Ag), nickel (Ni), etc.
  • the base 111 has a first main surface 111A, a first back surface 111B, and a through hole 111C.
  • the first main surface 111A faces the z1 side in the thickness direction z.
  • the first back surface 111B faces the z2 side in the thickness direction z.
  • the through hole 111C penetrates the base 111 in the thickness direction z.
  • the shape of the through hole 111C is not limited in any way, and in the illustrated example, it is circular when viewed in the thickness direction z.
  • the terminal portion 112 is connected to the base portion 111 and includes a portion extending toward the x1 side in the first direction x.
  • the base portion 111 and the terminal portion 112 are electrically conductive to each other.
  • a portion of the terminal portion 112 is covered with the sealing resin 60.
  • the portion of the terminal portion 112 covered with the sealing resin 60 is bent when viewed in the second direction y.
  • the surface of the portion of the terminal portion 112 exposed from the sealing resin 60 may be plated with, for example, tin (Sn).
  • the second lead 12 is separated from the first lead 11 and is disposed on the y2 side of the second direction y with respect to the terminal portion 112 of the first lead 11.
  • the second lead 12 is disposed on the x1 side of the first direction x with respect to the base portion 111 of the first lead 11.
  • the second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30.
  • the second lead 12 has a pad portion 121 and a terminal portion 122.
  • the pad portion 121 is covered with a sealing resin 60.
  • the pad portion 121 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 122 is connected to the pad portion 121.
  • a portion of the terminal portion 122 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60.
  • the terminal portion 122 extends in the first direction x, for example, parallel to the terminal portion 112.
  • the surface of the terminal portion 122 may be plated with, for example, tin (Sn).
  • the third lead 13 is separated from the first lead 11 and the second lead 12 and is disposed at a distance from the second lead 12 on the y2 side in the second direction y.
  • the third lead 13 is adjacent to the second lead 12 in the second direction y.
  • the third lead 13 is disposed at a distance from the base 111 on the x1 side in the first direction x.
  • the third lead 13 is electrically connected to the semiconductor element 20 via the second conductive member 40.
  • the third lead 13 has a pad portion 131 and a terminal portion 132.
  • the pad portion 131 is covered with sealing resin 60.
  • the pad portion 131 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 132 is connected to the pad portion 131. A portion of the terminal portion 132 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60. Terminal portion 132 extends in the first direction x, for example, parallel to terminal portion 112 and terminal portion 122.
  • the surface of terminal portion 132 may be plated with, for example, tin (Sn).
  • the fourth lead 14 is separated from the first lead 11, the second lead 12 and the third lead 13, and is disposed at a distance from the third lead 13 on the y2 side in the second direction y.
  • the fourth lead 14 is located on the opposite side of the second lead 12 with respect to the third lead 13 in the second direction y.
  • the fourth lead 14 is disposed at a distance from the base 111 on the x1 side in the first direction x.
  • the fourth lead 14 is electrically connected to the semiconductor element 20 via the third conductive member 50.
  • the fourth lead 14 has a pad portion 141 and a terminal portion 142.
  • the pad portion 141 is covered with a sealing resin 60.
  • the pad portion 141 may be plated with, for example, silver (Ag) or tin (Sn).
  • the terminal portion 142 is connected to the pad portion 141.
  • the terminal portion 142 is partially covered by the sealing resin 60, and the other portion is exposed from the sealing resin 60.
  • the terminal portion 142 extends in the first direction x, for example, parallel to the terminal portion 112, the terminal portion 122, and the terminal portion 132.
  • the surface of the terminal portion 142 may be plated with, for example, tin (Sn).
  • the semiconductor element 20 is mounted on the first main surface 111A of the base 111, as shown in Figures 3 and 8 to 13.
  • the specific configuration of the semiconductor element 20 is not limited in any way, and in this embodiment, the semiconductor element 20 is a switching element, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) of n-channel type and vertical structure.
  • the semiconductor element 20 is not limited to a MOSFET.
  • the semiconductor element 20 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 20 may be an LSI (Large Scale Integration) or a diode.
  • the semiconductor element 20 is rectangular when viewed in the thickness direction z.
  • the semiconductor element 20 is disposed in the center of the base 111 in the second direction y.
  • the semiconductor element 20 has a semiconductor layer 25, a first electrode 21, a second electrode 22, and a third electrode 23.
  • the thickness (dimension in the thickness direction z) of the semiconductor element 20 is not particularly limited, and is, for example, about 100 ⁇ m or more and 1000 ⁇ m or less.
  • the semiconductor layer 25 includes a compound semiconductor substrate.
  • the main material of the compound semiconductor substrate is silicon carbide (SiC).
  • silicon (Si) may be used as the main material of the compound semiconductor substrate.
  • the first electrode 21 is disposed on the z1 side of the semiconductor layer 25 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 20 flows through the first electrode 21.
  • the first electrode 21 is a source electrode.
  • the second electrode 22 is disposed in a portion of the semiconductor layer 25 on the z2 side in the thickness direction z.
  • the second electrode 22 faces the first main surface 111A of the base 111 of the first lead 11.
  • a current corresponding to the power before being converted by the semiconductor element 20 flows through the second electrode 22.
  • the second electrode 22 is a drain electrode.
  • the second electrode 22 is conductively bonded to the first main surface 111A via the first bonding layer 29.
  • the first bonding layer 29 is interposed between the first main surface 111A (base 111) and the second electrode 22, and is bonded to both the base 111 and the second electrode 22.
  • the first bonding layer 29 is made of a material having electrical conductivity, specifically, made of a sintered metal.
  • the constituent material of the first bonding layer 29 is, for example, sintered silver, but is not limited thereto, and may be other sintered metals such as sintered copper.
  • the thickness of the first bonding layer 29 (dimension t1 in the thickness direction z) is not particularly limited, but is, for example, 50 ⁇ m or less, and preferably is approximately 20 ⁇ m or more and 30 ⁇ m or less.
  • the third electrode 23 is disposed on the z1 side of the semiconductor layer 25 in the thickness direction z.
  • the third electrode 23 is located away from the first electrode 21.
  • a voltage is applied to the third electrode 23 to drive the semiconductor element 20.
  • the third electrode 23 is a gate electrode.
  • the area of the third electrode 23 is smaller than the area of the first electrode 21 when viewed in the thickness direction z.
  • the third electrode 23 is disposed on the y2 side of the second direction y of the semiconductor element 20 in the thickness direction z, and in the center in the first direction x.
  • the first electrode 21 is provided on most of the z1 side of the semiconductor layer 25 in the thickness direction z, except for the part where the third electrode 23 is disposed.
  • the first lead 11 is electrically connected to the second electrode 22 of the semiconductor element 20.
  • the terminal portion 112 is the drain terminal of the semiconductor device A10.
  • the second lead 12 is electrically connected to the first electrode 21 of the semiconductor element 20.
  • the terminal portion 122 is the source terminal of the semiconductor device A10.
  • the third lead 13 is electrically connected to the first electrode 21 of the semiconductor element 20.
  • the terminal portion 132 is the source sense terminal of the semiconductor device A10.
  • the fourth lead 14 is electrically connected to the third electrode 23 of the semiconductor element 20.
  • the terminal portion 142 is the gate terminal of the semiconductor device A10.
  • the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12.
  • the first conductive member 30 is made of, for example, a metal plate material.
  • the constituent material of the first conductive member 30 includes, for example, Cu (copper).
  • the first conductive member 30 is a metal plate material that is appropriately bent.
  • the first conductive member 30 is a fixed-length Cu clip (metal clip).
  • the first conductive member 30 extends with the first direction x as its longitudinal direction.
  • the thickness (dimension in the thickness direction z) of the first conductive member 30 is not particularly limited, and is, for example, about 150 ⁇ m or more and 250 ⁇ m or less.
  • the first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33.
  • the first portion 31 is conductively joined to the first electrode 21 via the second bonding layer 38.
  • the second bonding layer 38 is interposed between the first electrode 21 and the first portion 31, and is bonded to both the first electrode 21 and the first portion 31.
  • the second bonding layer 38 is made of a material having electrical conductivity, for example, a conductive paste.
  • the material of the second bonding layer 38 is, for example, solder, silver (Ag) paste, etc., and is preferably solder.
  • the thickness (dimension t2 in the thickness direction z) of the second bonding layer 38 is not particularly limited, but is, for example, 120 ⁇ m or less, and preferably about 30 ⁇ m or more and 50 ⁇ m or less.
  • the thickness (dimension t1 in the thickness direction z) of the above-mentioned first bonding layer 29 is smaller than the thickness (dimension t2 in the thickness direction z) of the second bonding layer 38.
  • the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x.
  • the first portion 31 is rectangular when viewed in the thickness direction z.
  • the second portion 32 is conductively joined to the pad portion 121 of the second lead 12 via the third bonding layer 39.
  • the third bonding layer 39 is interposed between the pad portion 121 (second lead 12) and the second portion 32, and is joined to both the second lead 12 and the second portion 32.
  • the third bonding layer 39 is made of a material having electrical conductivity, for example, a conductive paste.
  • the constituent material of the third bonding layer 39 is, for example, solder, silver (Ag) paste, etc., and is preferably solder.
  • the thickness (dimension in the thickness direction z) of the third bonding layer 39 is not particularly limited, but is, for example, 120 ⁇ m or less, and preferably is about 30 ⁇ m or more and 50 ⁇ m or less.
  • the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x.
  • the second portion 32 is rectangular when viewed in the thickness direction z.
  • the first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z.
  • the first intermediate portion 33 is connected to both the first portion 31 and the second portion 32.
  • the first intermediate portion 33 is rectangular when viewed in the thickness direction z.
  • the portion of the first intermediate portion 33 that is connected to the first portion 31 and the portion that is connected to the second portion 32 are each bent when viewed in the second direction y.
  • the portions of the first intermediate portion 33 other than the bent portions are along the xy plane and are located on the z1 side of the thickness direction z from the first portion 31 and the second portion 32.
  • the second conductive member 40 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is a bonding wire.
  • the specific configuration of the second conductive member 40 is not limited in any way, and includes a cross-sectional shape that is circular, elliptical, flattened rectangular, etc. In the illustrated example, the second conductive member 40 has a circular cross-sectional shape.
  • the second conductive member 40 is joined by wedge bonding, for example.
  • the material of the second conductive member 40 is not limited in any way, and includes, for example, copper (Cu), aluminum (Al), etc.
  • the third conductive member 50 is conductively joined to the third electrode 23 of the semiconductor element 20 and the pad portion 141 of the fourth lead 14.
  • the third conductive member 50 is a bonding wire.
  • the specific configuration of the third conductive member 50 is not limited in any way, and includes configurations in which the cross-sectional shape is circular, elliptical, flattened rectangular, etc. In the illustrated example, the third conductive member 50 has a circular cross-sectional shape.
  • the third conductive member 50 is joined by wedge bonding, for example.
  • the material of the third conductive member 50 is not limited in any way, and includes, for example, copper (Cu), aluminum (Al), etc.
  • the semiconductor element 20 is bonded to the base 111 via the first bonding layer 29 by sintering the sintering metal material.
  • the method of forming the first bonding layer 29 is not particularly limited, but as an example, first, a paste-like sintering metal material (e.g., sintering silver) is applied to the base 111 (first main surface 111A) with a dispenser. The sintering metal material has good fluidity and spreads thinly on the first main surface 111A. Next, the sintering metal material is dried, and the semiconductor element 20 is placed on the sintering metal material. Next, the sintering metal material is heated to form the first bonding layer 29 (sintered metal). Note that the sintering metal material may be pressurized during the heat treatment.
  • the first conductive member 30 is bonded to the first electrode 21 and the second lead 12 (pad portion 121) via the second bonding layer 38 and the third bonding layer 39 described above, for example, by a reflow process.
  • the method of forming the second bonding layer 38 and the third bonding layer 39 is not particularly limited, but as an example, a conductive paste material is first applied onto the first electrode 21 and the pad portion 121.
  • the conductive paste material has a higher viscosity than the sintering metal material described above, and does not spread as much as the sintering metal material.
  • the first conductive member 30 is placed on the conductive paste material and heated in a reflow furnace. This forms the second bonding layer 38 and the third bonding layer 39.
  • the second conductive member 40 and the third conductive member 50 are bonded.
  • the first bonding layer 29, which is made of sintered metal, has excellent thermal conductivity. More specifically, the first bonding layer 29 has a higher thermal conductivity than the second bonding layer 38, which is made of conductive paste.
  • the sealing resin 60 covers the semiconductor element 20, the first conductive member 30, the second conductive member 40, the third conductive member 50, part of the first lead 11, part of the second lead 12, part of the third lead 13 and part of the fourth lead 14.
  • the sealing resin 60 has electrical insulation properties.
  • the sealing resin 60 is made of a material that contains, for example, black epoxy resin.
  • the sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, a pair of second resin side surfaces 64, a pair of openings 65, a mounting hole 66 and a recess 67.
  • the resin main surface 61 faces the z1 side in the thickness direction z.
  • the resin back surface 62 faces the z2 side in the thickness direction z.
  • the first back surface 111B of the base 111 is exposed from the resin back surface 62.
  • the first back surface 111B and the resin back surface 62 are flush with each other.
  • the pair of first resin side surfaces 63 are positioned apart from each other in the first direction x. Each first resin side surface 63 is connected to the resin main surface 61 and the resin back surface 62.
  • the terminal portion 112 of the first lead 11, the terminal portion 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side of the first direction x.
  • the pair of second resin side surfaces 64 are spaced apart from each other in the second direction y. Each second resin side surface 64 is connected to the resin main surface 61 and the resin back surface 62.
  • the pair of openings 65 are positioned apart from each other in the second direction y. Each of the pair of openings 65 is recessed inwardly into the sealing resin 60 from the resin main surface 61 and a corresponding one of the pair of second resin side surfaces 64. A portion of the first main surface 111A of the base 111 of the first lead 11 is exposed from the pair of openings 65.
  • the mounting hole 66 penetrates the sealing resin 60 from the resin main surface 61 to the resin back surface 62 in the thickness direction z.
  • the mounting hole 66 is contained within the through hole 111C of the base 111 of the first lead 11.
  • the inner surface of the base 111 that defines the through hole 111C is covered with the sealing resin 60.
  • the maximum dimension of the mounting hole 66 is smaller than the dimension of the through hole 111C.
  • the recess 67 is located between the terminal portion 112 and the terminal portion 122 in the second direction y.
  • the recess 67 is recessed from the first resin side surface 63 located on the x1 side in the first direction x to the x2 side in the first direction x.
  • FIG. 14 is a schematic diagram of a vehicle B1 equipped with the semiconductor device A10.
  • the vehicle B1 is, for example, an electric vehicle (EV).
  • EV electric vehicle
  • the vehicle B1 includes an AC-DC converter 81, a power receiving device 82, a storage battery 83, and a drive system 84.
  • the semiconductor device A10 constitutes a part of the AC-DC converter 81.
  • the AC-DC converter 81 converts the AC power into high-voltage DC power.
  • the AC-DC converter 81 supplies the high-voltage DC power to the storage battery 83.
  • the power receiving device 82 supplies power to the storage battery 83 by a non-contact charging system.
  • the power receiving device 82 supplies power by electromagnetic induction from a non-contact charger (not shown) installed in a parking lot or the like.
  • the power stored in the storage battery 83 is supplied to the drive system 84, which is composed of an inverter, an AC motor, and a transmission.
  • the drive system 84 drives the vehicle B1.
  • the AC-DC converter 81 is an example of the "power conversion device" of the present disclosure.
  • the semiconductor device A10 includes a first lead 11, a second lead 12, a semiconductor element 20, a first conductive member 30, a first bonding layer 29, and a second bonding layer 38.
  • the first conductive member 30 is conductively bonded to the first electrode 21 of the semiconductor element 20 and the second lead 12.
  • the first bonding layer 29 is interposed between the base 111 of the first lead 11 and the second electrode 22 of the semiconductor element 20, and is bonded to both the base 111 and the second electrode 22.
  • the second bonding layer 38 is interposed between the first electrode 21 and the first portion 31 of the first conductive member 30, and is bonded to both the first electrode 21 and the first portion 31.
  • the first bonding layer 29 includes a sintered metal.
  • the first conductive member 30 allows a large current to flow through the semiconductor device A10.
  • the first bonding layer 29 interposed between the base 111 and the second electrode 22 contains a sintered metal, and the first bonding layer 29 made of the sintered metal has excellent thermal conductivity. Therefore, even if the amount of heat generated in the semiconductor element 20 increases with an increase in the current of the semiconductor device A10, the heat generated in the semiconductor element 20 can be efficiently released to the base 111 (first lead 11) via the first bonding layer 29. Therefore, the semiconductor device A10 can improve heat dissipation while increasing the current.
  • the second bonding layer 38 interposed between the first electrode 21 of the semiconductor element 20 and the first portion 31 of the first conductive member 30 contains a conductive paste.
  • the conductive paste material for forming the second bonding layer 38 is highly viscous and does not spread easily when applied. This makes it possible to prevent the second bonding layer 38 from sagging from the side of the semiconductor element 20 even if the size of the first portion 31 bonded to the first electrode 21 via the second bonding layer 38 is increased. Therefore, the semiconductor device A10 is suitable for passing a larger current, and can achieve improved heat dissipation and reliability.
  • the thickness of the first bonding layer 29 (dimension t1 in the thickness direction z) is smaller than the thickness of the second bonding layer 38 (dimension t2 in the thickness direction z). This allows heat generated in the semiconductor element 20 to be dissipated more efficiently to the base 111 (first lead 11) via the first bonding layer 29. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A10.
  • FIGS. 15 to 21 show other embodiments of the present disclosure.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations will be omitted.
  • the configurations of the various parts in each embodiment can be combined with each other as appropriate to the extent that no technical contradictions arise.
  • FIG. 15 and 16 show a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 15 is a partial plan view showing a semiconductor device A20 according to this embodiment.
  • FIG. 16 is a partially enlarged cross-sectional view showing the semiconductor device A20, and shows a cross section similar to that of FIG. 11.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A20 of this embodiment differs from the semiconductor device A10 described above in the configuration of the first conductive member 30 and the arrangement of the second conductive member 40.
  • the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is conductive to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31).
  • the first portion 31 is U-shaped when viewed in the thickness direction z.
  • the first portion 31 is also provided on both sides of the third electrode 23 in the first direction x when viewed in the thickness direction z, and overlaps most of the first electrode 21 when viewed in the thickness direction z.
  • the first bonding layer 29 is interposed between the base 111 of the first lead 11 and the second electrode 22 of the semiconductor element 20, and is bonded to both the base 111 and the second electrode 22.
  • the second bonding layer 38 is interposed between the first electrode 21 of the semiconductor element 20 and the first portion 31 of the first conductive member 30, and is bonded to both the first electrode 21 and the first portion 31.
  • the first bonding layer 29 includes a sintered metal. With this configuration, the first conductive member 30 makes it possible to pass a large current through the semiconductor device A20.
  • the first bonding layer 29 interposed between the base 111 and the second electrode 22 includes a sintered metal, and the first bonding layer 29 made of the sintered metal has excellent thermal conductivity.
  • the semiconductor device A20 can improve heat dissipation while achieving a large current.
  • the semiconductor device A20 has the same effects as the semiconductor device A10.
  • the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13.
  • the second conductive member 40 is conductive to the first electrode 21 via the first conductive member 30.
  • FIG. 17 to 19 show a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 17 is a partial plan view showing a semiconductor device A30 according to this embodiment.
  • FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 17.
  • FIG. 19 is a partially enlarged cross-sectional view taken along line XIX-XIX in FIG. 17.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the semiconductor device A30 of this embodiment differs from the above-described semiconductor device A10 in the configurations of the first conductive member 30 and the second conductive member 40.
  • the second conductive member 40 is conductively joined to the first portion 31 of the first conductive member 30 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is made of, for example, a metal plate material.
  • the constituent material of the second conductive member 40 includes, for example, Cu (copper).
  • the second conductive member 40 is a metal plate material that is appropriately bent.
  • the second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43.
  • the third portion 41 is joined to the first portion 31 of the first conductive member 30 via a joining layer 49.
  • the joining layer 49 is made of a conductive material, such as solder or silver (Ag) paste.
  • the third portion 41 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31).
  • the third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x.
  • the fourth portion 42 is joined to the pad portion 131 of the third lead 13 via a joining layer 49.
  • the joining layer 49 is made of a conductive material, such as solder or silver (Ag) paste.
  • the fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.
  • the second intermediate portion 43 is located between the third portion 41 and the fourth portion 42 when viewed in the thickness direction z.
  • the second intermediate portion 43 is connected to both the third portion 41 and the fourth portion 42.
  • the portion of the second intermediate portion 43 that is connected to the third portion 41 and the portion that is connected to the fourth portion 42 are each bent when viewed in the second direction y.
  • the portion of the second intermediate portion 43 other than the bent portion is along the xy plane and is located on the z1 side of the thickness direction z from the third portion 41 and the fourth portion 42.
  • the portion of the second intermediate portion 43 other than the bent portion is located on the y2 side of the second direction y as it moves toward the x1 side of the first direction x, and extends in a direction intersecting both the first direction x and the second direction y.
  • the first portion 31 is U-shaped when viewed in the thickness direction z.
  • the first portion 31 is also provided on both sides of the third electrode 23 in the first direction x when viewed in the thickness direction z, and overlaps most of the first electrode 21 when viewed in the thickness direction z.
  • the first bonding layer 29 is interposed between the base 111 of the first lead 11 and the second electrode 22 of the semiconductor element 20, and is bonded to both the base 111 and the second electrode 22.
  • the second bonding layer 38 is interposed between the first electrode 21 of the semiconductor element 20 and the first portion 31 of the first conductive member 30, and is bonded to both the first electrode 21 and the first portion 31.
  • the first bonding layer 29 includes a sintered metal. With this configuration, the first conductive member 30 makes it possible to pass a large current through the semiconductor device A30.
  • the first bonding layer 29 interposed between the base 111 and the second electrode 22 includes a sintered metal, and the first bonding layer 29 made of the sintered metal has excellent thermal conductivity.
  • the semiconductor device A30 can improve heat dissipation while achieving a large current.
  • the semiconductor device A30 has the same effects as the semiconductor device A10.
  • the second conductive member 40 is conductively joined to the first portion 31 (first conductive member 30) and the third lead 13.
  • the second conductive member 40 is conductive to the first electrode 21 via the first conductive member 30.
  • FIG. 20 and 21 show a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 20 is a partial plan view showing a semiconductor device A40 according to this embodiment.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20.
  • the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line).
  • the specific configurations of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 are different from those of the semiconductor device A10, and accordingly, other elements are also appropriately changed.
  • the terminal portion 112 is connected to the base portion 111 and is disposed on the x2 side of the base portion 111 in the first direction x.
  • the terminal portion 112 is elongated in the second direction y.
  • the terminal portion 112 is electrically connected to the second electrode 22 (drain electrode) of the semiconductor element 20 via the base portion 111 and the first bonding layer 29.
  • the terminal portion 112 is the drain terminal of the first conductive member 30.
  • the first bonding layer 29 is interposed between the base 111 and the second electrode 22, and is bonded to both the base 111 and the second electrode 22.
  • the first bonding layer 29 is made of a conductive material, specifically, a sintered metal.
  • the material of the first bonding layer 29 is, for example, sintered silver, but is not limited thereto, and may be other sintered metals such as sintered copper.
  • the thickness (dimension in the thickness direction z) of the first bonding layer 29 is not particularly limited, but is, for example, 50 ⁇ m or less, and preferably is approximately 20 ⁇ m or more and 30 ⁇ m or less.
  • the second lead 12 is separated from the first lead 11 and is disposed on the x1 side of the base 111 of the first lead 11 in the first direction x.
  • the second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30.
  • the second lead 12 has a pad portion 121 and a plurality of terminal portions 122 (five in the illustrated example).
  • the pad portion 121 is elongated in the second direction y and is disposed from the center in the second direction to the y2 side in the thickness direction z.
  • the plurality of terminal portions 122 are arranged at intervals from each other in the second direction y, and each is connected to the pad portion 121.
  • the portion of each terminal portion 122 exposed from the sealing resin 60 is appropriately bent in the second direction y.
  • the pad portion 121 (second lead 12) is electrically connected to the first electrode 21 (source electrode) of the semiconductor element 20 via the first conductive member 30.
  • the multiple terminal portions 122 are source terminals of the semiconductor device A40.
  • the third lead 13 is spaced apart from the first lead 11 and the second lead 12, and is spaced apart from the second lead 12 on the y1 side in the second direction y.
  • the third lead 13 is adjacent to the second lead 12 in the second direction y.
  • the third lead 13 is also spaced apart from the base 111 on the x1 side in the first direction x.
  • the third lead 13 is electrically connected to the first electrode 21 (source electrode) of the semiconductor element 20 via the second conductive member 40.
  • the terminal portion 132 is a source sense terminal of the semiconductor device A40.
  • the fourth lead 14 is spaced apart from the first lead 11, the second lead 12, and the third lead 13, and is spaced apart from the third lead 13 on the y1 side in the second direction y.
  • the fourth lead 14 is located on the opposite side of the second lead 12 in the second direction y with the third lead 13 as a reference.
  • the fourth lead 14 is spaced apart from the base 111 on the x1 side in the first direction x.
  • the fourth lead 14 is electrically connected to the third electrode 23 (gate electrode) of the semiconductor element 20 via the third conductive member 50.
  • the terminal portion 142 is a gate terminal of the semiconductor device A40.
  • the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12.
  • the first conductive member 30 is made of, for example, a metal plate material.
  • the material of the first conductive member 30 includes, for example, Cu (copper).
  • the first conductive member 30 is a metal plate material that is appropriately bent.
  • the first conductive member 30 is a fixed-length Cu clip (metal clip).
  • the first conductive member 30 extends with the first direction x as its longitudinal direction.
  • the first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33.
  • the first portion 31 is conductively joined to the first electrode 21 via a second bonding layer 38.
  • the second bonding layer 38 is interposed between the first electrode 21 and the first portion 31, and is bonded to both the first electrode 21 and the first portion 31.
  • the second bonding layer 38 is made of a material having electrical conductivity, for example, a conductive paste.
  • the material constituting the second bonding layer 38 is, for example, solder, Ag (silver) paste, etc., and is preferably solder.
  • the thickness (dimension in the thickness direction z) of the second bonding layer 38 is not particularly limited, but is, for example, 120 ⁇ m or less, and preferably about 30 ⁇ m or more and 50 ⁇ m or less. In this embodiment, the thickness (dimension in the thickness direction z) of the first bonding layer 29 is smaller than the thickness (dimension in the thickness direction z) of the second bonding layer 38. In the illustrated example, the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x.
  • the second portion 32 is conductively joined to the pad portion 121 of the second lead 12 via the third bonding layer 39.
  • the third bonding layer 39 is interposed between the pad portion 121 (second lead 12) and the second portion 32, and is joined to both the second lead 12 and the second portion 32.
  • the third bonding layer 39 is made of a material having electrical conductivity, for example, a conductive paste.
  • the constituent material of the third bonding layer 39 is, for example, solder, Ag (silver) paste, etc., and is preferably solder.
  • the thickness (dimension in the thickness direction z) of the third bonding layer 39 is not particularly limited, but is, for example, 120 ⁇ m or less, and preferably about 30 ⁇ m or more and 50 ⁇ m or less.
  • the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x.
  • the first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z.
  • the first intermediate portion 33 is connected to both the first portion 31 and the second portion 32.
  • the portion connected to the first portion 31 and the portion connected to the second portion 32 are each bent when viewed in the second direction y.
  • the portions other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z of the first portion 31 and the second portion 32.
  • the second conductive member 40 is conductively joined to the first electrode 21 (source electrode) of the semiconductor element 20 and the pad portion 131 of the third lead 13.
  • the second conductive member 40 is a bonding wire.
  • the specific configuration of the second conductive member 40 is not limited in any way, and includes a cross-sectional shape that is circular, elliptical, flattened rectangular, etc.
  • the material of the second conductive member 40 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.
  • the third conductive member 50 is conductively joined to the third electrode 23 (gate electrode) of the semiconductor element 20 and the pad portion 141 of the fourth lead 14.
  • the third conductive member 50 is a bonding wire.
  • the specific configuration of the third conductive member 50 is not limited in any way, and includes a cross-sectional shape that is circular, elliptical, flattened rectangular, etc.
  • the material of the third conductive member 50 is not limited in any way, and includes, for example, copper (Cu), aluminum (Al), etc.
  • the third electrode 23 is disposed near the corner of the semiconductor element 20 on the x2 side in the first direction x and on the y1 side in the second direction y, as viewed in the thickness direction z.
  • the semiconductor element 20 is bonded to the base 111 via the first bonding layer 29 by sintering the sintering metal material.
  • the method of forming the first bonding layer 29 is not particularly limited, but as an example, first, a paste-like sintering metal material (e.g., sintering silver) is applied to the base 111 (first main surface 111A) with a dispenser. The sintering metal material has good fluidity and spreads thinly on the first main surface 111A. Next, the sintering metal material is dried, and the semiconductor element 20 is placed on the sintering metal material. Next, the sintering metal material is heated to form the first bonding layer 29 (sintered metal). Note that the sintering metal material may be pressurized during the heat treatment.
  • the first conductive member 30 is bonded to the first electrode 21 and the second lead 12 (pad portion 121) via the second bonding layer 38 and the third bonding layer 39 described above, for example, by a reflow process.
  • the method of forming the second bonding layer 38 and the third bonding layer 39 is not particularly limited, but as an example, a conductive paste material is first applied onto the first electrode 21 and the pad portion 121.
  • the conductive paste material has a higher viscosity than the sintering metal material described above, and does not spread as much as the sintering metal material.
  • the first conductive member 30 is placed on the conductive paste material and heated in a reflow furnace. This forms the second bonding layer 38 and the third bonding layer 39.
  • the second conductive member 40 and the third conductive member 50 are bonded.
  • the first bonding layer 29 made of sintered metal has excellent thermal conductivity. More specifically, the first bonding layer 29 has a higher thermal conductivity than the second bonding layer 38 made of conductive paste.
  • the sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, and a pair of second resin side surfaces 64.
  • Each of the multiple terminal portions 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side of the first direction x.
  • the terminal portion 112 of the first lead 11 protrudes from the first resin side surface 63 facing the x2 side of the first direction x.
  • the first bonding layer 29 is interposed between the base 111 of the first lead 11 and the second electrode 22 of the semiconductor element 20, and is bonded to both the base 111 and the second electrode 22.
  • the second bonding layer 38 is interposed between the first electrode 21 of the semiconductor element 20 and the first portion 31 of the first conductive member 30, and is bonded to both the first electrode 21 and the first portion 31.
  • the first bonding layer 29 includes a sintered metal. With this configuration, the first conductive member 30 makes it possible to pass a large current through the semiconductor device A40.
  • the first bonding layer 29 interposed between the base 111 and the second electrode 22 includes a sintered metal, and the first bonding layer 29 made of the sintered metal has excellent thermal conductivity.
  • the semiconductor device A40 can improve heat dissipation while achieving a large current.
  • the semiconductor device A40 has the same effects as the semiconductor device A10.
  • the semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
  • the present disclosure includes configurations related to the following notes.
  • Appendix 1 a first lead having a base; a semiconductor element mounted on one side in a thickness direction of the base, the semiconductor element having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction; a second lead disposed apart from the base in a first direction perpendicular to the thickness direction; a first conductive member having a first portion joined to the first electrode and a second portion joined to the second lead, the first conductive member being electrically connected to the first electrode and the second lead; a first bonding layer interposed between the base and the second electrode and bonded to both the base and the second electrode; a second bonding layer interposed between the first electrode and the first portion and bonded to both the first electrode and the first portion,
  • the semiconductor device, wherein the first bonding layer includes a sintered metal.
  • Appendix 2 The semiconductor device of claim 1, wherein the second bonding layer includes a conductive paste. Appendix 3. 3. The semiconductor device of claim 2, wherein the second bonding layer includes solder. Appendix 4. 4. The semiconductor device according to claim 1, further comprising a third bonding layer interposed between the second lead and the second portion and bonded to both the second lead and the second portion. Appendix 5. 5. The semiconductor device according to claim 4, wherein the third bonding layer includes a conductive paste. Appendix 6. 6. The semiconductor device according to claim 5, wherein the third bonding layer includes solder. Appendix 7. 7. The semiconductor device according to claim 1, wherein the dimension of the first bonding layer in the thickness direction is smaller than the dimension of the second bonding layer in the thickness direction. Appendix 8. 8. 8.
  • Appendix 16. a fourth lead disposed apart from the base in the first direction; and a third conductive member, the semiconductor element has a third electrode disposed on one side in the thickness direction; the fourth lead is disposed apart from the third lead in a second direction perpendicular to both the thickness direction and the first direction; 16. The semiconductor device according to claim 11, wherein the third conductive member is conductively joined to the third electrode and the fourth lead.
  • the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode; 17.
  • Appendix 18. A vehicle comprising a power conversion device configured to include the semiconductor device according to claim 17.

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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DE112024001988.9T DE112024001988T5 (de) 2023-05-26 2024-04-26 Halbleiterbauteil und fahrzeug
JP2025523363A JPWO2024247579A1 (https=) 2023-05-26 2024-04-26
US19/394,119 US20260082945A1 (en) 2023-05-26 2025-11-19 Semiconductor device and vehicle

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Publication number Priority date Publication date Assignee Title
WO2022014300A1 (ja) * 2020-07-13 2022-01-20 ローム株式会社 半導体装置、および半導体装置の製造方法
WO2023021938A1 (ja) * 2021-08-18 2023-02-23 ローム株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022014300A1 (ja) * 2020-07-13 2022-01-20 ローム株式会社 半導体装置、および半導体装置の製造方法
WO2023021938A1 (ja) * 2021-08-18 2023-02-23 ローム株式会社 半導体装置

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