Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J7/00—Adhesives in the form of films or foils
  • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
  • C09J7/38—Pressure-sensitive adhesives [PSA]
  • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
  • C09J7/385—Acrylic polymers
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
  • C08F222/10—Esters
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
  • C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
  • C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
  • C09J11/02—Non-macromolecular additives
  • C09J11/06—Non-macromolecular additives organic
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
  • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J7/00—Adhesives in the form of films or foils
  • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
  • C09J7/38—Pressure-sensitive adhesives [PSA]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
  • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2301/00—Additional features of adhesives in the form of films or foils
  • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
  • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
  • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2301/00—Additional features of adhesives in the form of films or foils
  • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
  • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation

Definitions

• the present invention relates to a temporary fixing material used when processing workpieces such as semiconductor wafers.
• the present invention relates to a temporary fixing material that protects semiconductor wafers in order to perform wafer processing such as grinding, etching, and film formation on the back surface of the semiconductor wafer.
• the present invention relates to a temporary fixing material for use in a wafer processing method in which a semiconductor wafer is processed using a system (wafer support system) in which the semiconductor wafer is fixed to a support substrate.
• Patent Document 1 discloses that a solution is provided in which sufficient adhesive strength is exhibited during wafer processing, and the supporting substrate can be removed after the wafer processing process is completed without damaging the wafer or leaving any adhesive residue, by controlling the elastic modulus after curing through light or heat curing.
• a suitable dicing tape Patent Document 2
• a tape for grinding the back surface of a hard and brittle substrate Patent Document 3
• Patent Document 3 can be designed by controlling either the composite elastic modulus or the indentation hardness measured by a nanoindentation test within a preferred range, but a suitable design for a temporary fixing material applicable to a heat-resistant process is not known.
• Patent Documents 3 to 6 discloses that a solution is provided in which sufficient adhesive strength is exhibited during wafer processing, and the supporting substrate can be removed after the wafer processing process is completed without damaging the wafer or leaving any adhesive residue, by controlling the elastic modulus after curing through light or heat curing.
• Patent Document 2 a suitable dicing tape
• Patent Document 3 a tape for grinding
• JP 2015-29105 A International Publication No. 2014-142193 JP 2021-028392 A International Publication No. 2020-162330 JP 2021-73365 A JP 2017-132940 A
• an object of the present invention is to provide a temporary fixing material having an adhesive layer for use in processing a workpiece such as a semiconductor wafer, which can be stably separated from the wafer (workpiece) after a processing process of the workpiece such as a semiconductor wafer and can also be applied to a heat-resistant process, and to provide a method for manufacturing a final wafer product using the temporary fixing material.
• the inventors conducted an investigation using a wafer coated with polyimide (PI), which is often used as an insulating film for patterned wafers, and found that even when the elastic modulus of the entire adhesive cured product was set within the range preferred in Patent Document 1, peeling was heavy and the adhesive cured product could not be peeled off easily after heat treatment, as shown in Comparative Example 1. As a result of the investigation by the inventors, they found that it is important to appropriately control the surface elastic modulus after curing (composite elastic modulus measured by nanoindentation testing).
• PI polyimide
• the inventors have found that by controlling the composite modulus and hardness of the adhesive material on the temporary fixing tape device side after curing, measured by a nanoindentation test, it is possible to design a tape that can be easily peeled off without leaving any adhesive residue by suppressing adhesion increase due to heat treatment.
• the composite modulus can be controlled and the tape can be easily peeled off even after heat treatment (Examples 1 to 6).
• the peeling force is heavy and the tape cannot be easily peeled off (Comparative Example 1).
• the amount of polyfunctional acrylate added is too large, the composite modulus after curing becomes too large and the tape cannot be peeled off (Comparative Examples 2 and 3).
• the present invention provides: [1] A temporary fixing material having an adhesive layer and used for processing a workpiece,
• the adhesive layer in contact with the workpiece has a composite elastic modulus of 30 to 900 MPa as measured by a nanoindentation test after being cured under the following conditions by heating or light irradiation: (Heating conditions) Heat at 140°C for 30 minutes (Irradiation conditions) 1000 mJ/ cm2 Regarding.
• [2] to [14] are each a preferred aspect or embodiment of the present invention.
• the pressure-sensitive adhesive layer comprises, relative to 100 parts by mass of the acrylic polymer,
• the pressure-sensitive adhesive layer comprises, relative to 100 parts by mass of the acrylic polymer, The temporary fixing material according to any one of [1] to [8], further comprising: an organic peroxide: 0.1 to 3.0 parts by mass.
• the pressure-sensitive adhesive layer comprises, relative to 100 parts by mass of the acrylic polymer, The temporary fixing material according to any one of [1] to [9], further comprising: 10 to 100 parts by mass of a bifunctional and/or trifunctional acrylate.
• step (b) (a) forming a laminate including a wafer, a temporary fixing material, and a support; (b) curing the adhesive layer contained in the temporary fixing material by heating or ultraviolet irradiation; (c) after step (b), subjecting the wafer to a heat treatment, a mechanical processing treatment, a chemical treatment, a physical treatment, a laser processing treatment, and/or a film forming treatment; (d) removing the support from the laminate after step (c); and (e) removing the temporary fixing material from the laminate including the wafer and the temporary fixing material after step (d).
• a method for manufacturing a wafer final product comprising:
• the pressure-sensitive adhesive layer has a composite elastic modulus of 30 to 900 MPa as measured by a nanoindentation test after being cured by heating or light irradiation under the following conditions: (Heating conditions) Heating at 140° C. for 30 minutes (Irradiation conditions) 1000 mJ/cm 2 .
• Heating conditions Heating at 140° C. for 30 minutes
• Irradiation conditions 1000 mJ/cm 2 .
• the method according to [11] wherein the pressure-sensitive adhesive layer has an indentation hardness of 4 to 80 MPa as measured by a nanoindentation test after curing under the conditions.
• step (d) comprises removing the support from the laminate by laser peeling or mechanical peeling.
• the temporary fixing material having a pressure-sensitive adhesive layer used in the present invention improves the handleability of thin or fragile wafers, allowing stable processing of the wafer in a wide variety of processing processes, and also allows the pressure-sensitive adhesive layer to be stably removed from the wafer after the wafer processing process. This makes it possible to perform multiple and/or diverse processes on the wafer with high productivity and yield without damaging electronic components such as functional layers formed on the wafer, greatly contributing to improving the productivity of electronic components such as electronic devices.
• the present invention relates to A temporary fixing material having an adhesive layer and used for processing a workpiece,
• the adhesive layer in contact with the workpiece has a composite elastic modulus of 30 to 900 MPa as measured by a nanoindentation test after being cured under the following conditions by heating or light irradiation: (Heating conditions) Heat at 140°C for 30 minutes (Irradiation conditions) 1000 mJ/ cm2 It is.
• the adhesive layer used in the present invention is used to temporarily fix a work such as a wafer.
• it is an adhesive layer that contacts a work such as a wafer.
• the adhesive layer used in the present invention is easily peeled off from the wafer after wafer processing, and has a composite modulus of 30 to 900 MPa measured in a nanoindentation test after curing under the following conditions by heating or light irradiation: (heating condition) heating at 140°C for 30 minutes; (irradiation condition) 1000 mJ/cm 2 .
• the composite modulus is in this range, the adhesive layer has sufficient adhesive strength to fix the wafer to the support, but has a sufficiently low adhesive strength to be peeled off.
• the mechanism by which the composite modulus realizes the easy peelability from the wafer shown above is not necessarily clear, but it is presumed that the composite modulus satisfying this range has some relationship with providing the adhesive layer with appropriate flexibility during peeling and appropriate dissipation of the force required for peeling.
• the nanoindentation test conditions will be described in the following examples.
• the composite elastic modulus may preferably be 32 to 780 MPa.
• the composite elastic modulus can be adjusted by the types and amounts of the components described below.
• the adhesive layer used in the present invention after curing under the above conditions, preferably has an indentation hardness measured by a nanoindentation test of 4 to 80 MPa, more preferably 5 to 75 MPa.
• the adhesive component used in the adhesive layer used in the present invention may be, for example, a rubber-based, acrylic-based, epoxy-based, urethane-based, allyl-based, silicone-based, fluorine-based, or polyimide-based adhesive component. It is preferable that the adhesive layer used in the present invention contains an acrylic polymer, since it is heat resistant and the adhesive strength and adhesion can be easily adjusted.
• the adhesive component is preferably a curable adhesive component because, by curing the adhesive component before wafer processing, voids are less likely to occur in the high-temperature process during the wafer manufacturing process, and adhesion promotion due to high temperatures in the high-temperature process is suppressed, making it easy to peel off without leaving any adhesive residue.
• the curable adhesive component include a photocurable adhesive component that crosslinks and hardens when irradiated with light, and a thermosetting adhesive component that crosslinks and hardens when heated.
• thermosetting adhesive component examples include a thermosetting adhesive component that contains a monomer, oligomer, or polymer such as acrylic, epoxy, urethane acrylate, epoxy acrylate, silicone acrylate, or polyester acrylate as a curing component and contains a thermal polymerization initiator.
• the acrylic polymer can be obtained, for example, by synthesizing in advance a (meth)acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth)acrylic polymer), and reacting it with a compound having in the molecule a functional group that reacts with the functional group and a radically polymerizable unsaturated bond (hereinafter referred to as a functional group-containing unsaturated compound).
• a functional group-containing (meth)acrylic polymer a compound having in the molecule a functional group that reacts with the functional group and a radically polymerizable unsaturated bond
• the functional group-containing (meth)acrylic polymer is obtained by copolymerizing, in a conventional manner, an acrylic acid alkyl ester and/or a methacrylic acid alkyl ester, the alkyl group of which typically has 2 to 18 carbon atoms, with a functional group-containing monomer and, if necessary, with other modifying monomers that are copolymerizable with the functional group-containing monomer.
• the weight-average molecular weight of the functional group-containing (meth)acrylic polymer is typically about 200,000 to 2,000,000.
• Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate, isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.
• carboxyl group-containing monomers such as acrylic acid and methacrylic acid
• hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate
• epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate
• isocyanate group-containing monomers such as isocyanate
• copolymerizable modifying monomers include, for example, various monomers used in general (meth)acrylic polymers, such as vinyl acetate, acrylonitrile, and styrene.
• the same as the functional group-containing monomer described above can be used depending on the functional group of the functional group-containing (meth)acrylic polymer.
• the functional group of the functional group-containing (meth)acrylic polymer is a carboxyl group
• an epoxy group-containing monomer or an isocyanate group-containing monomer is used.
• the functional group is a hydroxyl group
• an isocyanate group-containing monomer is used.
• the functional group is an epoxy group
• a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used.
• an amino group an epoxy group-containing monomer is used.
• the pressure-sensitive adhesive layer used in the present invention may contain a curable adhesive component.
• an organic peroxide may be contained as a thermal polymerization initiator. Examples of organic peroxides include those that decompose by heat to generate active radicals that initiate polymerization curing.
• hexanoic acid t-butylperoxy-2-ethyl bis(4-methylbenzoyl)peroxide, benzoyl peroxide, 1,1-bis(t-hexylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)cyclohexane, 2,2-bis(4,4-bis-(t-butylperoxy)cyclohexyl)propane, monocarboxylate t-hexylperoxyisopropyl, t-butylperoxyacetate, 2,2-bis-( t-butylperoxy)butane, n-butyl 4,4-bis-(t-butylperoxy)pentanoate, bis-t-hexyl peroxide, dicumyl peroxide, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, bis(2-t-butylperoxyisopropyl)benzen
• thermal polymerization initiators commercially available ones are not particularly limited, but suitable examples include Perbutyl O, Niper BMT, Niper BW, Perhexa HC, Perhexa C, Pertetra A, Perhexyl I, Perbutyl A, Perhexa 22, Perhexa V, Perhexyl D, Percumyl D, Perhexa 25B, Perbutyl P, Perbutyl C, Perhexine 25B, Percumyl P (all manufactured by NOF Corp.), Perkadox 12XL25 (manufactured by Noury Chemical Co., Ltd.), etc.
• thermal polymerization initiators may be used alone or in combination of two or more kinds.
• the amount of the organic peroxide is preferably 0.1 to 3.0 parts by mass relative to 100 parts by mass of the acrylic polymer.
• the amount is more preferably 0.1 to 1.0 part by mass.
• the amount of the organic peroxide is within this range, it can function sufficiently as a thermal polymerization initiator.
• the pressure-sensitive adhesive layer used in the present invention may contain, as a curing component, for example, a monomer, oligomer, or polymer such as acrylic, epoxy, urethane acrylate, epoxy acrylate, silicone acrylate, or polyester acrylate.
• a curing component for example, a monomer, oligomer, or polymer such as acrylic, epoxy, urethane acrylate, epoxy acrylate, silicone acrylate, or polyester acrylate.
• the oligomer or monomer as the curing component generally has a molecular weight of 10,000 or less and has 1 to 40 radically polymerizable unsaturated bonds in the molecule. From the viewpoint of three-dimensional reticulation, the number of radically polymerizable unsaturated bonds is preferably 2 or more.
• oligomer or monomer as the curing component examples include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and the same methacrylates as above.
• Other examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylates, urethane acrylates, and the same methacrylates as above. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.
• the adhesive layer used in the present invention may contain a polyfunctional acrylate as a curing component.
• the polyfunctional acrylate is preferably a bifunctional or trifunctional acrylate.
• the elastic modulus of the adhesive layer after curing is thought to depend on the polyfunctional acrylate, and by using a bifunctional or trifunctional acrylate, the adhesive layer can be easily peeled off without leaving any adhesive residue after wafer processing.
• bifunctional or trifunctional acrylates include trimethylolpropane triacrylate, trimethylolpropane PO-modified triacrylate, polyester acrylate, etc.
• the amount of bifunctional and/or trifunctional acrylate is preferably 10 to 100 parts by mass per 100 parts by mass of the acrylic polymer.
• the amount is more preferably 30 to 60 parts by mass.
• the amount of polyfunctional acrylate is 10 parts by mass or more, sufficient adhesive force is exerted to temporarily fix the wafer and the support, and unintended peeling during the wafer processing step can be prevented.
• the amount of polyfunctional acrylate is 100 parts by mass or less, glue residue due to excessive adhesive force can be prevented.
• the pressure-sensitive adhesive layer used in the present invention may contain an isocyanate crosslinking agent.
• an isocyanate crosslinking agent a HDI (hexamethylene diisocyanate)-based isocyanate crosslinking agent is preferred.
• examples of commercially available ones include D170N (manufactured by Mitsui Chemicals, Inc.) and Coronate HX (manufactured by Tosoh Corporation).
• the amount of the isocyanate crosslinking agent is preferably 0.01 to 8 parts by mass per 100 parts by mass of the acrylic polymer.
• the amount is more preferably 3 to 6 parts by mass.
• the isocyanate crosslinking agent is in this range, it can function sufficiently as a crosslinking agent.
• the pressure-sensitive adhesive layer used in the present invention contains an acrylic polymer, (a) isocyanate crosslinking agent: 0.01 to 8 parts by mass, (b) organic peroxide: 0.1 to 3.0 parts by mass, and (c) difunctional and/or trifunctional acrylate: 10 to 100 parts by mass, Among these, at least two or more of them may be further included.
• the composition may contain a combination of (a) an isocyanate crosslinking agent and (b) an organic peroxide, (a) an isocyanate crosslinking agent and (c) a difunctional and/or trifunctional acrylate, and (b) an organic peroxide and (c) a difunctional and/or trifunctional acrylate, or may contain all of (a) an isocyanate crosslinking agent, (b) an organic peroxide, and (c) a difunctional and/or trifunctional acrylate.
• the adhesive layer used in the present invention may contain known additives such as acrylic polymers not having unsaturated double bonds, various thermal crosslinking agents such as melamine compounds and epoxy compounds, and release agents, plasticizers, resins, surfactants, waxes, and particulate fillers, if desired.
• the release agent is not particularly limited as long as it generally exhibits a release effect.
• hydrocarbon compounds, silicone compounds, fluorine compounds, polyethylene wax, carnauba wax, montanic acid, stearic acid, etc. which are known as release agents for plastic materials, can be mentioned.
• silicone and fluorine compounds are preferred, and silicone and fluorine compounds having a functional group capable of crosslinking with the curable adhesive are more preferred.
• silicone compounds have excellent heat resistance, so they prevent the adhesive layer from burning even after treatment involving heating at 200°C or higher, and they bleed out to the interface with the adherend during peeling, making peeling easy.
• the silicone compound Since the silicone compound has a functional group that can crosslink with the curing adhesive, it chemically reacts with the curing adhesive when irradiated with light or heated, and is incorporated into the curing adhesive, so the silicone compound does not adhere to the adherend and contaminate it. In addition, the incorporation of a silicone compound also has the effect of preventing adhesive residue on semiconductor chips.
• the release agent include plasticizers.
• the plasticizer is not particularly limited as long as it generally reduces the adhesive strength of the adhesive layer to the adherend. Examples of the plasticizer include trimellitic acid esters, pyromellitic acid esters, phthalic acid esters, and adipic acid esters.
• the amount of release agent added is not particularly limited, but is appropriately determined so as to obtain a release effect.
• the amount added is controlled so as not to be excessive so as not to significantly impair the adhesive function of the adhesive layer used in the present invention.
• it is desirable to adjust the amount added according to the peel force aiming at an amount of usually 0.1 to 5 parts by mass, preferably 0.1 to 3 parts by mass, and more preferably 0.1 to 1 part by mass, per 100 parts by mass of the adhesive layer as a whole.
• the amount of the plasticizer according to the peel strength usually about 5 to 50 parts by weight, preferably about 10 to 50 parts by weight, and more preferably about 20 to 40 parts by weight.
• these release agents can be used alone or in combination.
• the thickness of the adhesive layer used in the present invention is not particularly limited, but the preferred lower limit is 5 ⁇ m and the preferred upper limit is 250 ⁇ m, and the more preferred lower limit of the thickness of the adhesive layer is 10 ⁇ m and the more preferred upper limit is 200 ⁇ m.
• the thickness of the adhesive layer is within this range, it can absorb the unevenness of the wafer and can be temporarily fixed to the support with sufficient strength, and when peeling off the adhesive layer, the peeling force can be easily adjusted to a preferred range.
• the present invention provides a temporary fixing material having the above-mentioned adhesive layer.
• the temporary fixing material can be a single-sided tape.
• the single-sided tape can include a substrate such as a film and a device-side adhesive layer (wafer-side adhesive layer).
• the adhesive layer of the single-sided tape can be a single layer or a laminate of multiple adhesive layers.
• the temporary fixation material of the present invention can be for use in a wafer support system.
• the temporary fixing material for use in the wafer support system can be a double-sided tape such as a double-sided adhesive tape.
• the temporary fixing material can include a substrate, a first adhesive layer on one side of the substrate, and a second adhesive layer (support-side adhesive layer) on the other side (opposite side) of the substrate, the first adhesive layer being the adhesive layer in contact with the workpiece, and the second adhesive layer can include the same adhesive layer as the adhesive layer in contact with the workpiece.
• the adhesive strength of the support side can be appropriately adjusted, so that the support can be easily removed after the wafer is processed.
• the base film can be designed from the viewpoint of mechanical strength and handling of the entire laminate, so that it is particularly advantageous from the viewpoint of optimizing the performance of the tape.
• the material of the base film is not particularly limited, but it is preferable to use a plastic film, such as a film, sheet, sheet having a mesh-like structure, sheet with holes, etc., made of acrylic, olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), nylon, urethane, polyether ether ketone (PEEK), liquid crystal polymer (LCP), polyimide, etc. From the viewpoint of handling, etc., PET, PEN, or polyimide film is preferable.
• the temporary fixing material for use in the wafer support system can be a liquid temporary fixing material.
• the adhesive layer can contain a liquid adhesive.
• the liquid adhesive refers to an adhesive that is liquid or semi-liquid at room temperature, and includes, for example, a liquid curing adhesive that hardens when heated.
• the liquid adhesive is applied to either one or both of the wafer and support by spin coating or the like to form a laminate of wafer/adhesive layer or adhesive layer/support, and then the adhesive layers of both are bonded together to create a laminate of support/adhesive layer/wafer.
• the workpiece to be processed using the temporary fixing material of the present invention is not particularly limited, and examples thereof include semiconductor wafers.
• the wafer to be temporarily fixed to a support and processed using the temporary fixing material of the present invention is not particularly limited, and any wafer generally used in semiconductor manufacturing processes can be used.
• wafers that require careful handling during processing due to reasons such as thinness and fragility, and therefore require temporary fixing are preferably used.
• the thinness and fragility of the wafer are assumed to be, for example, a case in which the thickness temporarily becomes thin during processing, causing problems in handling, and the temporary fixing material of the present invention is used for temporary fixing of such wafers to a support.
• cases in which a wafer becomes temporarily thin include a case in which a thin wafer is processed starting from a thin wafer, a case in which a relatively thick wafer is thinned during a process, and a case in which the thin wafer is further processed.
• the thickness of the temporarily thinned wafer is usually 1 to 200 ⁇ m.
• the wafers temporarily fixed using the temporary fixing material of the present invention include those whose state changes during the process.
• the wafer to be temporarily fixed using the temporary fixing material of the present invention there is no particular limitation on the wafer to be temporarily fixed using the temporary fixing material of the present invention. More specific examples thereof include semiconductor wafers such as silicon wafers, compound semiconductor wafers such as SiC, AlSb, AlAs, AlN, AlP, BN, BP, BAs, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, or InP, quartz wafers, sapphire, glass, and mold wafers.
• the silicon wafer or compound semiconductor wafer may be doped.
• An electric/electronic functional layer may be formed on or in the wafer. Suitable examples of the functional layer include electronic circuits, capacitors, transistors, resistors, electrodes, optical elements, MEMS, etc., but may also be other microdevices.
• the surfaces of these functional layers may have structures, typically electrodes, formed from one or more of the following materials: silicon, polysilicon, silicon dioxide, silicon (oxy)nitride, metals (e.g., copper, aluminum, gold, tungsten, tantalum), low-k dielectrics, polymer dielectrics, and various metal nitrides and metal silicides.
• the side of the wafer on which the functional layers are formed may also have raised structures such as solder bumps, metal posts, and pillars.
• the wafer surface may be covered with an oxide film or a nitride film for forming a functional layer or for protecting the functional layer, or may be covered with a passivation film for protecting the wafer.
• the present invention provides a method for producing: (a) forming a laminate including a wafer, a temporary fixing material, and a support; (b) curing the adhesive layer contained in the temporary fixing material by heating or ultraviolet irradiation; (c) after step (b), subjecting the wafer to a heat treatment, a mechanical processing treatment, a chemical treatment, a physical treatment, a laser processing treatment, and/or a film forming treatment; (d) removing the support from the laminate after step (c); and (e) removing the temporary fixing material from the laminate including the wafer and the temporary fixing material after step (d).
• a method for manufacturing a wafer final product comprising:
• the pressure-sensitive adhesive layer has a composite elastic modulus of 30 to 900 MPa as measured by a nanoindentation test after being cured by heating or light irradiation under the following conditions: (Heating conditions) Heating at 140° C. for 30 minutes (Irradiation conditions) 1000 mJ/cm 2 .
• Step (a) is a step of forming a laminate including a wafer, a temporary fixing material, and a support. That is, it is a step of laminating the wafer and the support in order to temporarily fix the wafer and the support via the temporary fixing material.
• the temporary fixing material may be the same as that described above.
• the adhesive layer contained in the temporary fixing material may be any of those described above.
• an adhesive layer having a photocurable adhesive component that is crosslinked and cured by irradiation with light may be used instead of the adhesive layer having the thermosetting adhesive component described above.
• the photocurable adhesive component may, for example, contain a monomer, oligomer, or polymer such as acrylic, epoxy, urethane acrylate, epoxy acrylate, silicone acrylate, or polyester acrylate as a curing component, and may include a photocurable adhesive component that contains a photopolymerization initiator.
• the photopolymerization initiator may be activated by irradiation with light having a wavelength of 250 to 800 nm.
• photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal, phosphine oxide derivative compounds, bis( ⁇ 5-cyclopentadienyl)titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, ⁇ -hydroxycyclohexylphenyl ketone, and 2-hydroxymethylphenylpropane.
• photopolymerization initiators may be used alone or in combination of two or more.
• Wafer As the wafer, the same wafer as that shown in the above-mentioned specific example of the workpiece can be used.
• the support body preferably has sufficient strength and rigidity, and is excellent in heat resistance and chemical resistance.
• the wafer can be stably handled, and the wafer can be subjected to a large number and/or a wide variety of processes without bending or the like.
• the wafer on which the electronic circuit is formed can be subjected to various processes required for manufacturing an electronic device having a structure in which semiconductor chips are stacked, such as TSV connection.
• the support may be composed of a single material, but may also be composed of multiple materials and may include other materials deposited on the substrate.
• the support may have a vapor deposition layer of silicon nitride or the like on a silicon wafer. It may also be surface-treated, such as by providing a release layer.
• the support may be made of plastic.
• a sheet made of a plastic such as polyimide, acrylic, polyolefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, or urethane can be preferably used as the support.
• Polyimide can be used because it has a certain degree of heat resistance.
• the thickness of the support is desirable for the thickness of the support to be uniform in order to obtain uniformity in the thickness of the wafer after grinding, etc.
• the variation in the thickness of the support should be suppressed to ⁇ 2 ⁇ m or less.
• the thickness of the support is not particularly limited, but from the viewpoint of effectively preventing the wafer from curving, it is preferably 300 ⁇ m or more, and particularly preferably 500 ⁇ m or more, and from the viewpoint of suppressing the total weight during handling or reducing the stress required for mechanical peeling, it is preferably 1500 ⁇ m or less, and particularly preferably 1000 ⁇ m or less.
• a laminate including a wafer, a temporary fixing material, and a support can be obtained.
• the wafer can be subjected to various semiconductor manufacturing processes while having sufficient strength and rigidity and preventing bending and breakage.
• the support, the temporary fixing material, and the wafer can be laminated in this order.
• the order of lamination is not particularly limited, and these layers may be laminated at once or sequentially.
• the adhesive layer is supplied as a liquid curable adhesive material or the like
• the liquid curable adhesive material or the like is applied to either the wafer or the support, or both, by spin coating or the like to form a laminate of wafer/adhesive layer or adhesive layer/support, and then the other support or wafer is attached under reduced pressure to produce a laminate consisting of support/adhesive layer/wafer.
• the adhesive layer is supplied as a solid tape (film)
• the solid tape (film) can be attached to either the wafer or the support, and then the other can be attached under reduced pressure to create a laminate consisting of support/adhesive layer/wafer.
• Step (b) is a step of curing the adhesive layer contained in the temporary fixing material by heating or ultraviolet irradiation, and is a step of curing the adhesive layer in the laminate obtained in step (a).
• Curing adhesive components that are crosslinked and hardened by irradiation with light or heat have dramatically improved chemical resistance, and can prevent the adhesive from dissolving in chemical solutions, even when chemical solutions are applied to the backside of the wafer during the wafer processing process.
• the elastic modulus of the curing adhesive components that are crosslinked and hardened increases, making adhesion less likely to increase even at high temperatures, and peeling is relatively easy.
• an adhesive component containing a polymer having an unsaturated double bond such as a vinyl group in the side chain and a photopolymerization initiator activated at a wavelength of 250 to 800 nm is used as the photocurable adhesive component in which the adhesive layer is crosslinked and cured by the above-mentioned light irradiation
• the adhesive layer contains a polymer having an unsaturated double bond such as a vinyl group in the side chain and a thermal polymerization initiator that is activated by heating at about 50 to 200°C
• the thermosetting adhesive component can be crosslinked and hardened by heating at a temperature of about 50 to 200°C for 5 to 40 minutes.
• step (b) may involve curing the adhesive layer by heating at 120 to 160°C for 5 to 40 minutes.
• the adhesive layer can be sufficiently cured by heating at 120°C or higher for 5 minutes or more.
• Step (c) is a step of subjecting the wafer to a heat treatment, a mechanical processing treatment, a chemical treatment, a physical treatment, a laser processing treatment, and/or a film formation treatment after step (b).
• the laminate formed through steps (a) and (b) can be subjected to at least one wafer treatment selected from heat treatment (including treatment involving heat generation; the same applies below), mechanical processing, chemical processing, physical processing, laser processing, and film formation processing.
• the laminate formed through steps (a) and (b) can also be subjected to TSV processing and processing required for forming a structure in which TSV-processed semiconductor chips are stacked.
• the above heat treatments include, but are not limited to, for example, thermal curing of the resin composition, heat drying of the resin composition, baking of the resin composition, reflow, resin sealing, etc.
• the machining process is typically a polishing, grinding, drilling, cutting process of the wafer, but is not limited to this, and also includes singulation and the like.
• the surface on which the electrodes are not formed (back surface) is ground or polished.
• the thickness of the wafer after grinding and polishing the back surface varies depending on the electronic device in which the obtained electronic device is used, but is usually set to 1 ⁇ m or more and 200 ⁇ m or less, preferably 5 ⁇ m or more and 100 ⁇ m or less, and more preferably 5 ⁇ m or more and 50 ⁇ m or less. This allows the obtained electronic device to be made thinner, and the electronic device using the electronic device to be made smaller.
• the wafer when grinding and polishing the wafer, the wafer is laminated to a rigid support via the adhesive layer, which allows the wafer to be ground with greater precision, and after grinding, the wafer can be subjected to further processing steps without damaging the wafer, and the wafer and adhesive layer can be easily separated.
• the above-mentioned chemical treatments include, for example, polishing treatments such as CMP, treatments using acids, alkalis or organic solvents, such as plating treatments such as electrolytic plating and electroless plating, wet etching treatments using hydrofluoric acid, tetramethylammonium hydroxide aqueous solution (TMAH) or the like, resist stripping processes using N-methyl-2-pyrrolidone, monoethanolamine, DMSO or the like, cleaning processes using concentrated sulfuric acid, ammonia water, hydrogen peroxide water or the like, but are not limited to these.
• polishing treatments such as CMP
• treatments using acids such as electrolytic plating and electroless plating
• TMAH tetramethylammonium hydroxide aqueous solution
• resist stripping processes using N-methyl-2-pyrrolidone, monoethanolamine, DMSO or the
• the above physical treatments include, but are not limited to, plasma treatment, ion implantation, laser annealing, etc.
• the above-mentioned laser processing treatments include, but are not limited to, annealing, via processing, circuit formation processing by direct drawing, and pre-processing for separation from the support.
• the above-mentioned film formation processes include, but are not limited to, coating processes such as spin coating, inkjet, and screen printing, sputtering, deposition, etching, chemical vapor deposition (CVD), physical vapor deposition (PVD), resist coating and patterning, heat lamination of resin composition films, back metal, etc.
• coating processes such as spin coating, inkjet, and screen printing, sputtering, deposition, etching, chemical vapor deposition (CVD), physical vapor deposition (PVD), resist coating and patterning, heat lamination of resin composition films, back metal, etc.
• the wafer even though the wafer undergoes heat treatment, mechanical processing, chemical processing, physical processing, laser processing, and film formation processing in the wafer processing process, sufficient adhesive strength is maintained during the wafer processing, and after the wafer processing process is completed, the wafer can be peeled off from the adhesive layer without being damaged or leaving any glue residue in the process of peeling the wafer off from the laminate.
• step (c) chip bonding, wire bonding, flip chip bonding, surface activation direct bonding, etc. can be performed.
• a dicing tape may be attached to the treatment surface (preferably the grinding surface) of the wafer. By attaching the dicing tape in advance, dicing can be performed quickly after peeling off the support and the adhesive layer.
• Step (d) is a step of removing the support from the laminate after step (c).
• the method of removing the support from the laminate is not particularly limited, but it is preferable to perform the method by laser peeling or mechanical peeling, since the apparatus can be simplified and therefore it is cost-effective.
• a treatment before peeling may be performed in advance, and a method such as swelling or dissolution of the pressure-sensitive adhesive layer by a solvent may be appropriately adopted as a treatment before peeling.
• Step (e) is a step of removing the temporary fixing material from a laminate including a wafer and a temporary fixing material after step (d). Since the support is removed from the laminate through step (d), the temporary fixing material can be separated from the wafer without applying excessive stress to the wafer, so that the risk of damaging the functional layer formed on the wafer can be limited.
• a peeling tape can be attached to the temporary fixing material, and the temporary fixing material can be peeled off from the wafer together with the peeling tape, and since no special device or the like is required, it is also excellent in terms of cost.
• the temporary fixing material and wafer processing method used in the present invention allow the wafer to be stably processed and then subjected to subsequent processes to produce the final wafer product.
• the final product can be produced by carrying out processes such as dicing, bonding, packaging, and sealing that are commonly used in the manufacture of electronic devices such as semiconductor devices.
• the non-corona-treated side of a substrate film PEN film (polyethylene naphthalate film, manufactured by Toyobo Co., Ltd., trade name: Teonex Q83C, thickness: 50 ⁇ m, one-side corona treatment) was subjected to corona treatment to obtain a substrate film having double-side corona treatment.
• PEN film polyethylene naphthalate film, manufactured by Toyobo Co., Ltd., trade name: Teonex Q83C, thickness: 50 ⁇ m, one-side corona treatment
• a coating solution was obtained by diluting an aqueous urethane resin solution for a substrate film with a primer (manufactured by DIC Corporation, product name: Hydran AP-40N) with distilled water. This coating solution was applied to a substrate film (polyethylene naphthalate film) using a wire bar and dried at 130°C for 5 minutes. Similarly, a primer was laid on the back surface to obtain a substrate film with a primer.
• a primer manufactured by DIC Corporation, product name: Hydran AP-40N
• Resin for forming adhesive layer - (Meth)acrylic resin solution N 49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator were reacted at 80°C for 10 hours in a solvent consisting of 65 parts by mass of toluene and 50 parts by mass of ethyl acetate.
• Example 1 The adhesive tape described in Example 1 was prepared as follows. The other Examples and Comparative Examples were prepared in the same manner based on the Example Table.
• Adhesive intermediate layer coating (Meth)acrylic resin solution N (75 parts by weight as solid content), (Meth)acrylic resin solution SA591 (25 parts by weight as solid content), organic peroxide 12XL25 (0.5 parts by weight as solid content), polyfunctional isocyanate D-170N (0.1 parts by weight as solid content) and ethyl acetate were mixed to obtain a coating liquid for the intermediate layer (solid content concentration: 35%).
• This coating liquid was applied to the release surface of the separator with an applicator and dried in a hot air oven at 100°C for 10 minutes to form a 40 ⁇ m thick adhesive layer. Next, it was attached to the primer-attached substrate film side to obtain a separator/intermediate layer (40 ⁇ m)/substrate with primer.
• Adhesive Surface Coating and Adhesive Tape (Meth)acrylic resin solution N (75 parts by weight as solid content), (Meth)acrylic resin solution SA591 (25 parts by weight as solid content), organic peroxide 12XL25 (0.5 parts by weight as solid content), polyfunctional isocyanate D-170N (5.68 parts by weight as solid content) and ethyl acetate were mixed to obtain a coating solution for the surface layer (solid content concentration: 30%). This coating solution was applied to the release surface of the separator with an applicator, and dried in a hot air oven at 100°C for 10 minutes to form a tacky adhesive layer with a thickness of 10 ⁇ m.
• the separator was peeled off from the previous separator/intermediate layer (40 ⁇ m)/substrate film with primer, and a laminate consisting of separator/surface layer (10 ⁇ m)/intermediate layer (40 ⁇ m)/substrate film with primer was obtained by laminating it. Subsequently, this laminate was heat-aged in an oven at 50° C. for 5 days to obtain an adhesive tape.
• Example 2 The surface tensile test sample described in Example 2 was prepared as follows.
• the sample disk with the adhesive tape (cured product) attached was fixed to the stage of the nanoindenter using correction fluid.
• the composite elastic modulus and hardness (indentation hardness) were obtained by numerically processing the displacement-load curve obtained by pressing the probe against the adhesive surface using software attached to the measuring device. Measurements were taken at three different locations, and the average of the values was used as the measured value.
• Adhesive strength (without heat treatment) After peeling off the separator from the adhesive tape (25 mm wide), the adhesive tape was attached to a silicon wafer with a PI (polyimide) film (Seiren KST Co., Ltd., film thickness after baking: 5 ⁇ m). After one hour, the load was read using a universal testing machine (Toyo Seiki Seisakusho Co., Ltd., Strograph E-S) to measure the adhesive strength (tensile speed: 300 mm/min, measurement temperature: 23° C.).
• PI polyimide
• Adhesive strength (140°C/30 minutes ⁇ 200°C/30 minutes later)
• the separator of the adhesive tape (25 mm wide) was peeled off, and the adhesive material was pre-dried at 100° C.
• the adhesive tape was attached to a silicon wafer with a PI (polyimide) film (Seiren KST Co., Ltd., film thickness after baking: 5 ⁇ m).
• the sample was heated to 140°C for 30 minutes using a hot plate to harden it.
• a heat treatment was performed at 200°C for 30 minutes using a hot plate.
• the sample was placed in a universal tester (The load was read using a Strograph E-S (Toyo Seiki Seisakusho Co., Ltd.), and the adhesive strength was measured (tensile speed: 300 mm/min, measurement temperature: 23° C.).
• the adhesive material adheresive layer
• the composite elastic modulus measured by nanoindentation testing was 30-800 MPa
• the adhesive strength PI film-attached wafer (after 140°C/30 minutes -> 200°C/30 minutes)
• the adhesive strength was rated as x, with glue remaining, not peeling possible, or a large peeling force.
• the temporary fixing material of the present invention allows a large number and/or wide variety of processes to be carried out on wafers with high productivity and yield without damaging electronic components such as functional layers formed on the wafer, making a significant contribution to improving the productivity of electronic devices and highly applicable in various fields of industries such as the electronic component industry, including the semiconductor process industry, the electrical and electronics industry that uses electronic components, the transportation machinery industry, the information and communications industry, and the precision equipment industry.

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