Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
  • C08G77/04—Polysiloxanes
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/075—Silicon-containing compounds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/075—Silicon-containing compounds
  • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/094—Multilayer resist systems, e.g. planarising layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
  • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
  • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
  • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
  • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
  • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
  • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
  • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
  • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
  • H10P76/2041—Photolithographic processes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
  • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
  • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
  • H10P76/2041—Photolithographic processes
  • H10P76/2042—Photolithographic processes using lasers

Definitions

• the present invention relates to a method for manufacturing a semiconductor substrate and a composition for forming an underlayer film for a metal-containing resist.
• a multi-layer resist process is used in which a resist film laminated on a substrate via an organic underlayer film, a silicon-containing film, etc. is exposed and developed to obtain a resist pattern, which is then used as a mask for etching to form a patterned substrate (see WO 2022/260154).
• metal-containing resist underlayer films are required to have pattern rectangularity that suppresses pattern tailing and development residues at the bottom of the resist film and ensures the rectangularity of the resist pattern.
• the object of the present invention is to provide a composition capable of forming a metal-containing resist underlayer film that provides good rectangularity in the resist pattern, and a method for manufacturing a semiconductor substrate.
• the present invention comprises: A step of directly or indirectly applying a metal-containing resist underlayer film-forming composition (hereinafter also referred to as "composition”) to a substrate; a step of applying a metal-containing resist film-forming composition to the metal-containing resist underlayer film formed by the above-mentioned metal-containing resist underlayer film-forming composition application step; A step of exposing the metal-containing resist film formed by the above-mentioned metal-containing resist film forming composition coating step to extreme ultraviolet light; and developing at least the exposed metal-containing resist film,
• the metal-containing resist underlayer film forming composition A compound (hereinafter also referred to as "compound (A)") having at least one structural unit (hereinafter also referred to as "structural unit ( ⁇ )”) selected from the group consisting of a structural unit ( ⁇ -1) represented by the following formula (1-1) and a structural unit ( ⁇ -2) represented by the following formula (1-2), A solvent (hereinafter also referred to as “solvent (B)”) and the total content of
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• a is an integer from 1 to 3. When a is 2 or more, multiple Xs are the same or different.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• b is an integer from 0 to 2. When b is 2, two Ys are the same or different. However, a+b is 3 or less.
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• c is an integer from 1 to 3. When c is 2 or more, the multiple Xs are the same or different from each other.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• d is an integer from 0 to 2. When d is 2, the two Ys are the same or different from each other.
• R 0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms.
• p is an integer from 1 to 3. When p is 2 or more, the multiple R 0s are the same or different from each other. However, c+d+p is 4 or less.
• the metal-containing resist underlayer film forming composition contains compound [A], which is a polysiloxane compound or polycarbosilane compound containing a structural unit ( ⁇ ) having an aliphatic hydrocarbon group.
• the metal-containing resist underlayer film formed by the above-mentioned metal-containing resist underlayer film forming composition contains a structural unit ( ⁇ ) having a relatively hydrophobic aliphatic hydrocarbon group, the organic solvent for development easily penetrates into the metal-containing resist underlayer film, making it easy to remove the metal-containing resist film with an organic solvent, and suppressing the generation of development residues. It is believed that these effects enable good pattern rectangularity to be achieved.
• organic group means a group containing at least one carbon atom
• number of carbon atoms means the number of carbon atoms that make up the group.
• the present invention provides a method for producing a pharmaceutical composition comprising the steps of: A compound having at least one structural unit selected from the group consisting of a structural unit ( ⁇ -1) represented by the following formula (1-1) and a structural unit ( ⁇ -2) represented by the following formula (1-2), A solvent and the total content of the structural unit ( ⁇ -1) and the structural unit ( ⁇ -2) relative to all structural units constituting the compound is 50 mol % or more and 100 mol % or less;
• the present invention relates to a metal-containing resist underlayer film forming composition.
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• a is an integer from 1 to 3. When a is 2 or more, multiple Xs are the same or different.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• b is an integer from 0 to 2. When b is 2, two Ys are the same or different. However, a+b is 3 or less.
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• c is an integer from 1 to 3. When c is 2 or more, the multiple Xs are the same or different from each other.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• d is an integer from 0 to 2. When d is 2, the two Ys are the same or different from each other.
• R 0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms.
• p is an integer from 1 to 3. When p is 2 or more, the multiple R 0s are the same or different from each other. However, c+d+p is 4 or less.
• This metal-containing resist underlayer film forming composition makes it possible to efficiently form a metal-containing resist underlayer film that exhibits excellent pattern rectangularity.
• the method for manufacturing a semiconductor substrate includes a step of directly or indirectly applying a metal-containing resist underlayer film-forming composition to a substrate (hereinafter also referred to as a "coating step (I)”), a step of applying a metal-containing resist film-forming composition to the metal-containing resist underlayer film formed by the above-mentioned metal-containing resist underlayer film-forming composition application step (hereinafter also referred to as a “coating step (II)”), a step of exposing the metal-containing resist film formed by the above-mentioned metal-containing resist film-forming composition application step to extreme ultraviolet light (hereinafter also referred to as an "exposure step”), and a step of developing at least the exposed metal-containing resist film (hereinafter also referred to as a "development step”).
• the method for manufacturing the semiconductor substrate may further include, as necessary, a step of forming an organic underlayer film directly or indirectly on the substrate prior to the coating step (I) (hereinafter also referred to as the "organic underlayer film forming step").
• the method may further include a step of etching the metal-containing resist underlayer film using the resist pattern as a mask to form a metal-containing resist underlayer film pattern (hereinafter also referred to as a "metal-containing resist underlayer film pattern forming step"), or a step of etching using the metal-containing resist underlayer film pattern as a mask (hereinafter referred to as an "etching step").
• a metal-containing resist underlayer film pattern forming step a step of etching using the metal-containing resist underlayer film pattern as a mask.
• metal-containing resist underlayer film forming composition used in the method for manufacturing a semiconductor substrate, as well as the optional organic underlayer film forming step prior to the metal-containing resist underlayer film forming step, the metal-containing resist underlayer film pattern forming step after the development step, and the etching step.
• the composition contains a compound [A] and a solvent [B].
• the composition may contain other optional components as long as the effects of the present invention are not impaired.
• composition is suitable for use in forming a metal-containing resist underlayer film as an underlayer film for a metal-containing resist film.
• Each component contained in the composition is described below.
• the compound [A] has at least the structural unit ( ⁇ ). Each structural unit contained in the compound [A] will be described below.
• the structural unit ( ⁇ ) is at least one selected from the group consisting of a structural unit ( ⁇ -1) represented by the following formula (1-1) and a structural unit ( ⁇ -2) represented by the following formula (1-2).
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• a is an integer from 1 to 3. When a is 2 or more, the multiple Xs are the same or different.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• b is an integer from 0 to 2. When b is 2, the two Ys are the same or different. However, a+b is 3 or less.
• X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom.
• c is an integer from 1 to 3. When c is 2 or more, the multiple Xs are the same or different from each other.
• Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• d is an integer from 0 to 2. When d is 2, the two Ys are the same or different from each other.
• R 0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms.
• p is an integer from 1 to 3. When p is 2 or more, the multiple R 0s are the same or different from each other. However, c+d+p is 4 or less.
• examples of the monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms represented by X include a monovalent linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, or a combination thereof.
• Examples of monovalent linear aliphatic hydrocarbon groups having 1 to 20 carbon atoms include monovalent linear aliphatic saturated hydrocarbon groups having 1 to 20 carbon atoms and monovalent linear aliphatic unsaturated hydrocarbon groups having 1 to 20 carbon atoms.
• Examples of monovalent linear aliphatic saturated hydrocarbon groups having 1 to 20 carbon atoms include alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, and tert-butyl.
• Examples of monovalent linear aliphatic unsaturated hydrocarbon groups having 1 to 20 carbon atoms include alkenyl groups such as ethenyl, propenyl, and butenyl; and alkynyl groups such as ethynyl, propynyl, and butynyl.
• Examples of monovalent alicyclic hydrocarbon groups having 3 to 20 carbon atoms include monocyclic alicyclic saturated hydrocarbon groups such as cyclopentyl and cyclohexyl groups; polycyclic alicyclic saturated hydrocarbon groups such as norbornyl, adamantyl, tricyclodecyl, and tetracyclododecyl groups; monocyclic alicyclic unsaturated hydrocarbon groups such as cyclopentenyl and cyclohexenyl groups; and polycyclic alicyclic unsaturated hydrocarbon groups such as norbornenyl, tricyclodecenyl, and tetracyclododecenyl groups.
• the above aliphatic hydrocarbon group is preferably a monovalent linear aliphatic saturated hydrocarbon group having 1 to 5 carbon atoms or a monovalent alicyclic saturated hydrocarbon group having 3 to 6 carbon atoms.
• the monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom represented by X includes groups in which some or all of the hydrogen atoms of the monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms are substituted with halogen atoms.
• halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms (unless otherwise specified, in this specification, "halogen atoms” include these atoms).
• Preferred halogen atoms are fluorine atoms and iodine atoms.
• the number of halogen atoms in the halogenated aliphatic hydrocarbon group is preferably 1 to 4, and more preferably 1 to 3.
• examples of the monovalent organic group having 1 to 20 carbon atoms represented by Y include a monovalent hydrocarbon group having 1 to 20 carbon atoms.
• a group containing a divalent heteroatom-containing linking group between carbon atoms of the hydrocarbon group or at the end of the hydrocarbon group hereinafter also referred to as “group ( ⁇ )”
• group ( ⁇ ) A group containing some or all of the hydrogen atoms in the above hydrocarbon group or the above group ( ⁇ ) are substituted with a monovalent heteroatom-containing substituent (hereinafter also referred to as “group ( ⁇ )”)
• group ( ⁇ ) A group combining at least two of the above hydrocarbon groups, the above group ( ⁇ ), and the above group ( ⁇ ) (hereinafter also referred to as “group ( ⁇ )”) etc.
• Examples of monovalent hydrocarbon groups having 1 to 20 carbon atoms include monovalent linear hydrocarbon groups having 1 to 20 carbon atoms, monovalent alicyclic hydrocarbon groups having 3 to 20 carbon atoms, and monovalent aromatic hydrocarbon groups having 6 to 20 carbon atoms.
• the above-mentioned monovalent chain aliphatic hydrocarbon group having 1 to 20 carbon atoms in X can be suitably used.
• the monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms the monovalent alicyclic hydrocarbon group having 1 to 20 carbon atoms in X above can be suitably used.
• Examples of monovalent aromatic hydrocarbon groups having 6 to 20 carbon atoms include aryl groups such as phenyl, tolyl, xylyl, naphthyl, and anthryl groups, and aralkyl groups such as benzyl, phenethyl, naphthylmethyl, and anthrylmethyl groups.
• heteroatoms constituting the divalent heteroatom-containing linking group and the monovalent heteroatom-containing substituent include oxygen atoms, nitrogen atoms, sulfur atoms, phosphorus atoms, silicon atoms, and halogen atoms.
• halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms.
• Examples of monovalent heteroatom-containing substituents include halogen atoms, hydroxy groups, carboxy groups, cyano groups, amino groups, and sulfanyl groups.
• Y is preferably an alkoxy group.
• a is preferably 1 or 2, and more preferably 1.
• b is preferably 0 or 1, and more preferably 0.
• c is preferably 1 or 2, and more preferably 1.
• d is preferably 0 or 1, and more preferably 0.
• examples of the substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms and bonded to two silicon atoms, represented by R0 include substituted or unsubstituted divalent chain hydrocarbon groups having 1 to 20 carbon atoms, substituted or unsubstituted divalent aliphatic cyclic hydrocarbon groups having 3 to 20 carbon atoms, and substituted or unsubstituted divalent aromatic hydrocarbon groups having 6 to 20 carbon atoms.
• unsubstituted divalent chain hydrocarbon groups having 1 to 20 carbon atoms include chain saturated hydrocarbon groups such as methanediyl and ethanediyl groups, and chain unsaturated hydrocarbon groups such as ethenediyl and propenediyl groups.
• unsubstituted divalent aliphatic cyclic hydrocarbon groups having 3 to 20 carbon atoms include monocyclic saturated hydrocarbon groups such as cyclobutanediyl groups, monocyclic unsaturated hydrocarbon groups such as cyclobutenediyl groups, polycyclic saturated hydrocarbon groups such as bicyclo[2.2.1]heptanediyl groups, and polycyclic unsaturated hydrocarbon groups such as bicyclo[2.2.1]heptanediyl groups.
• unsubstituted divalent aromatic hydrocarbon groups having 6 to 20 carbon atoms examples include phenylene groups, biphenylene groups, phenyleneethylene groups, naphthylene groups, etc.
• Examples of the substituent in the substituted divalent hydrocarbon group having 1 to 20 carbon atoms represented by R 0 include a halogen atom, a hydroxy group, a cyano group, a nitro group, an alkoxy group, an acyl group, and an acyloxy group.
• R 0 is preferably an unsubstituted chain saturated hydrocarbon group or an unsubstituted aromatic hydrocarbon group, and more preferably a methanediyl group, an ethanediyl group or a phenylene group.
• p is preferably 2 or 3.
• X in the above formula (1-1) and formula (1-2) can be, for example, a structure represented by the following formula:
• * represents a bond to the silicon atom in formula (1-1) and formula (1-2).
• the total content of the structural unit ( ⁇ -1) and the structural unit ( ⁇ -2) relative to all structural units constituting the compound [A] is 50 mol% or more and 100 mol% or less.
• the lower limit of the content (total when multiple types are included) is preferably 60 mol%, more preferably 70 mol%, and even more preferably 80 mol%.
• the upper limit of the content is preferably 95 mol%, and more preferably 90 mol%.
• the compound (A) may have a structural unit ( ⁇ ) represented by the following formula (2).
• R 1 is a monovalent organic group having 1 to 20 carbon atoms (however, monovalent aliphatic hydrocarbon groups and halogenated aliphatic hydrocarbon groups having 1 to 20 carbon atoms are not included), a hydroxy group, a hydrogen atom, or a halogen atom.
• h is 1 or 2. When h is 2, the two R 1s are the same or different from each other.
• R 2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms.
• q is an integer from 1 to 3. When q is 2 or more, multiple R 2s are the same or different from each other. However, h+q is 4 or less.
• examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 1 include the same groups as those exemplified as the monovalent organic group having 1 to 20 carbon atoms represented by Y in the above formulas (1-1) and (1-2) except that it does not include a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms and a halogenated aliphatic hydrocarbon group.
• R1 is preferably a hydrogen atom, a monovalent chain hydrocarbon group, a monovalent aromatic hydrocarbon group, or a monovalent group in which some or all of the hydrogen atoms of a monovalent hydrocarbon group have been substituted with a monovalent heteroatom-containing group, more preferably a hydrogen atom, an alkyl group, or an aryl group, and even more preferably a hydrogen atom, a methyl group, an ethyl group, or a phenyl group.
• Examples of the substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms and bonded to two silicon atoms represented by R2 include the same groups as those exemplified as the substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms and bonded to two silicon atoms represented by R0 in the above formula (1-2).
• R2 is preferably an unsubstituted chain saturated hydrocarbon group or an unsubstituted aromatic hydrocarbon group, and more preferably a methanediyl group, an ethanediyl group or a phenylene group.
• the lower limit of the content of the structural unit ( ⁇ ) (total when multiple types are included) is preferably 4 mol%, more preferably 6 mol%, and even more preferably 8 mol% relative to all structural units constituting the [A] compound.
• the upper limit of the content is preferably 70 mol%, more preferably 60 mol%, and even more preferably 50 mol%.
• the compound (A) may have a structural unit ( ⁇ ) represented by the following formula (3).
• R 12 is a substituted or unsubstituted monovalent alkoxy group having 1 to 20 carbon atoms, a hydroxyl group, or a halogen atom.
• e is an integer of 0 to 3. When e is 2 or more, multiple R 12 are the same or different.
• specific examples of the monovalent alkoxy group having 1 to 20 carbon atoms represented by R 12 include alkoxy groups such as a methoxy group, an ethoxy group, an n-propyloxy group, an isopropyloxy group, etc.
• examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc.
• R 12 is preferably an alkoxy group, more preferably a methoxy group.
• e is preferably an integer from 0 to 2, and more preferably 0 or 1.
• the lower limit of the content of the structural unit ( ⁇ ) in all structural units constituting the [A] compound is preferably 2 mol%, more preferably 5 mol%, and even more preferably 8 mol%.
• the upper limit of the content is preferably 70 mol%, more preferably 60 mol%, and even more preferably 55 mol%.
• the lower limit of the content of the compound [A] is preferably 0.1 mass%, more preferably 0.5 mass%, and even more preferably 0.8 mass%, based on the total mass of the compound [A] and the solvent [B].
• the upper limit of the content is preferably 10 mass%, more preferably 5 mass%, and even more preferably 2 mass%.
• the compound [A] is preferably in the form of a polymer.
• a "polymer” refers to a compound having two or more structural units, and when two or more identical structural units are consecutive in a polymer, this structural unit is also called a "repeating unit".
• the lower limit of the weight average molecular weight (Mw) of the compound [A] in terms of polystyrene measured by gel permeation chromatography (GPC) is preferably 800, more preferably 1,000, even more preferably 1,200, and particularly preferably 1,400.
• the upper limit of the Mw is preferably 15,000, more preferably 10,000, even more preferably 7,000, and particularly preferably 3,000.
• the method for measuring the Mw of the compound [A] is as described in the Examples.
• the compound [A] can be obtained, for example, by hydrolysis and condensation of a polysiloxane having a structural unit ( ⁇ -1), hydrolysis and condensation of a polycarbosilane having a structural unit ( ⁇ -2), or hydrolysis and condensation of a polycarbosilane having a structural unit ( ⁇ -2) and a silane compound that gives the structural unit ( ⁇ -1). During the hydrolysis and condensation, other silane compounds or the like may be added as necessary.
• the hydrolysis and condensation can be carried out by hydrolysis and condensation in a solvent such as diisopropyl ether in the presence of a catalyst such as oxalic acid and water, and preferably by purifying a solution containing the hydrolysis and condensation product produced through solvent replacement or the like in the presence of a dehydrating agent such as an orthoester or a molecular sieve. It is considered that each hydrolyzable silane monomer is incorporated into the compound [A] regardless of the type through the hydrolysis and condensation reaction, and the content ratio of the structural units ( ⁇ -1), ( ⁇ -2) and other structural units in the synthesized compound [A] is usually equivalent to the ratio of the amount of each monomer compound used in the synthesis reaction.
• solvent [B] examples include alcohol-based solvents, ketone-based solvents, ether-based solvents, ester-based solvents, nitrogen-containing solvents, water, etc.
• the solvent [B] may be used alone or in combination of two or more.
• alcohol-based solvents examples include monoalcohol-based solvents such as methanol, ethanol, n-propanol, isopropanol, n-butanol, and isobutanol, and polyhydric alcohol-based solvents such as ethylene glycol, 1,2-propylene glycol, diethylene glycol, and dipropylene glycol.
• Ketone solvents include, for example, acetone, 2-butanone, 2-pentanone, 4-methyl-2-pentanone, 2-heptanone, and cyclohexanone.
• ether solvents include ethyl ether, isopropyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and tetrahydrofuran.
• ester solvents include ethyl acetate, ⁇ -butyrolactone, n-butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, ethyl propionate, n-butyl propionate, methyl lactate, and ethyl lactate.
• nitrogen-containing solvents examples include N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
• ether-based solvents or ester-based solvents are preferred, and ether-based solvents or ester-based solvents having a glycol structure are more preferred because of their excellent film-forming properties.
• ether-based solvents and ester-based solvents having a glycol structure examples include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc.
• propylene glycol monomethyl ether acetate or propylene glycol monoethyl ether is preferred.
• the content of the ether-based solvent and ester-based solvent having a glycol structure in the solvent is preferably 20% by mass or more, more preferably 60% by mass or more, even more preferably 90% by mass or more, and particularly preferably 100% by mass.
• the lower limit of the content of the solvent [B] in the composition is preferably 50% by mass, more preferably 80% by mass, even more preferably 90% by mass, and particularly preferably 95% by mass.
• the upper limit of the content is preferably 99.9% by mass, and more preferably 99% by mass.
• the other optional components include acid generators, basic compounds (including base generators), orthoesters, radical generators, surfactants, colloidal silica, colloidal alumina, organic polymers, etc.
• the other optional components may be used alone or in combination of two or more.
• the acid generator is a component that generates an acid upon exposure to light or heating.
• the composition contains an acid generator, the condensation reaction of the compound (A) can be promoted even at relatively low temperatures (including room temperature).
• photoacid generators examples include the acid generators described in paragraphs [0077] to [0081] of JP-A-2004-168748, triphenylsulfonium trifluoromethanesulfonate, etc.
• Acid generators that generate acid when heated include onium salt-based acid generators exemplified as photoacid generators in the above patent documents, as well as 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkylsulfonates, etc.
• the lower limit of the content of the acid generator is preferably 0.001 parts by mass, and more preferably 0.01 parts by mass, per 100 parts by mass of the compound [A].
• the upper limit of the content of the acid generator is preferably 5 parts by mass, and more preferably 1 part by mass, per 100 parts by mass of the compound [A].
• the basic compound promotes the curing reaction of the composition, and as a result, improves the strength of the film formed.
• the basic compound also improves the peelability of the film by an acidic liquid.
• Examples of the basic compound include a compound having a basic amino group, and a base generator that generates a compound having a basic amino group by the action of an acid or heat.
• Examples of the compound having a basic amino group include an amine compound.
• Examples of the base generator include an amide group-containing compound, a urea compound, and a nitrogen-containing heterocyclic compound. Specific examples of the amine compound, the amide group-containing compound, the urea compound, and the nitrogen-containing heterocyclic compound include the compounds described in paragraphs [0079] to [0082] of JP-A-2016-27370.
• the lower limit of the content of the basic compound is preferably 0.001 parts by mass, and more preferably 0.01 parts by mass, relative to 100 parts by mass of the compound [A].
• the upper limit of the content is preferably 5 parts by mass, and more preferably 1 part by mass.
• Orthoesters are esters of orthocarboxylic acids. Orthoesters react with water to give carboxylic acid esters. Examples of orthoesters include orthoformic acid esters such as methyl orthoformate, ethyl orthoformate, and propyl orthoformate; orthoacetic acid esters such as methyl orthoacetate, ethyl orthoacetate, and propyl orthoacetate; and orthopropionic acid esters such as methyl orthopropionate, ethyl orthopropionate, and propyl orthopropionate. Among these, orthoformic acid esters are preferred, and trimethyl orthoformate is more preferred.
• the lower limit of the orthoester content is preferably 0.1 parts by mass, more preferably 0.5 parts by mass, and even more preferably 1 part by mass, relative to 100 parts by mass of compound [A].
• the upper limit of the content is preferably 30 parts by mass, more preferably 20 parts by mass, and even more preferably 10 parts by mass.
• the method for preparing the composition is not particularly limited.
• the composition can be prepared by mixing a solution of the compound [A], the solvent [B], and other optional components used as necessary in a predetermined ratio, and preferably filtering the resulting mixed solution through a filter having a pore size of 0.4 ⁇ m or less.
• an organic underlayer film is formed directly or indirectly on the substrate prior to the metal-containing resist underlayer film forming step.
• This step is an optional step.
• an organic underlayer film is formed directly or indirectly on the substrate.
• An organic underlayer film is formed on the substrate.
• the organic underlayer film can be formed by coating an organic underlayer film-forming composition.
• methods for forming an organic underlayer film by coating an organic underlayer film-forming composition include a method in which the organic underlayer film-forming composition is directly or indirectly coated onto a substrate, and the coated film is heated or exposed to light to harden the film.
• examples of the organic underlayer film-forming composition that can be used include "HM8006" by JSR Corporation. Heating and exposure conditions can be determined as appropriate depending on the type of organic underlayer film-forming composition used.
• An example of a case where an organic underlayer film is formed indirectly on a substrate is when the organic underlayer film is formed on a low dielectric insulating film formed on a substrate.
• a metal-containing resist underlayer film-forming composition is applied directly or indirectly to a substrate.
• a coating film of the composition is formed directly or indirectly on the substrate by this step, and the coating film is usually heated and cured to form a metal-containing resist underlayer film as a resist underlayer film.
• the substrate examples include insulating films such as silicon oxide, silicon nitride, silicon oxynitride, and polysiloxane, and resin substrates.
• the substrate may also be a substrate patterned with wiring grooves (trenches), plug grooves (vias), and the like.
• the method for applying the metal-containing resist underlayer film-forming composition is not particularly limited, and examples include a rotary coating method.
• An example of a case where the metal-containing resist underlayer film forming composition is indirectly applied to a substrate is a case where the metal-containing resist underlayer film forming composition is applied onto another film formed on the substrate.
• examples of other films formed on the substrate include an organic underlayer film formed by the organic underlayer film forming process described above, an anti-reflective film, a low dielectric insulating film, etc.
• the atmosphere is not particularly limited, and examples include air and nitrogen atmospheres.
• the coating film is heated in air.
• the heating temperature, heating time, and other conditions can be appropriately determined.
• the lower limit of the heating temperature is preferably 90°C, more preferably 150°C, and even more preferably 200°C.
• the upper limit of the heating temperature is preferably 550°C, more preferably 450°C, and even more preferably 300°C.
• the lower limit of the heating time is preferably 15 seconds, and more preferably 30 seconds.
• the upper limit of the heating time is preferably 1,200 seconds, and more preferably 600 seconds.
• the metal-containing resist underlayer film forming composition contains an acid generator and this acid generator is a radiation-sensitive acid generator
• the formation of the metal-containing resist underlayer film can be promoted by combining heating and exposure.
• the radiation used for exposure include the same radiation as those exemplified in the exposure step described below.
• the lower limit of the average thickness of the metal-containing resist underlayer film formed by this process is preferably 1 nm, more preferably 2 nm, and even more preferably 3 nm.
• the upper limit of the average thickness is preferably 30 nm, more preferably 10 nm, even more preferably 6 nm, and particularly preferably 5 nm.
• the method for measuring the average thickness of the metal-containing resist underlayer film is as described in the Examples.
• the method for applying the composition for forming a metal-containing resist film is not particularly limited, and examples include a rotary coating method.
• a composition for forming a metal-containing resist film is applied so that the metal-containing resist film to be formed has a predetermined thickness, and then the composition is pre-baked (hereinafter also referred to as "PB") to volatilize the solvent in the applied film, thereby forming a resist film.
• PB pre-baked
• the lower limit of the average thickness of the metal-containing resist film formed by this process is preferably 10 nm, more preferably 20 nm, and even more preferably 30 nm.
• the upper limit of the average thickness is preferably 60 nm, more preferably 50 nm, and even more preferably 40 nm.
• the PB temperature and PB time can be appropriately determined depending on the type of metal-containing resist film forming composition used.
• the lower limit of the PB temperature is preferably 30°C, and more preferably 50°C.
• the upper limit of the PB temperature is preferably 200°C, and more preferably 150°C.
• the lower limit of the PB time is preferably 10 seconds, and more preferably 30 seconds.
• the upper limit of the PB time is preferably 600 seconds, and more preferably 300 seconds.
• the metal-containing resist film forming composition used in this process includes a metal-containing resist film forming composition that contains a compound containing a metal atom (hereinafter also referred to as "[P] metal-containing compound").
• the composition for forming a metal-containing resist film contains a metal-containing compound [P] in an amount of 50 mass % or more calculated as a solid content.
• the composition for forming a metal-containing resist film preferably further contains a solvent [Q], and may further contain other components.
• the metal-containing compound [P] is a compound containing a metal atom.
• the metal-containing compound [P] may be used alone or in combination of two or more.
• the metal atoms constituting the fluorine-containing polymer may be used alone or in combination of two or more kinds.
• the term "metal atom” refers to a concept including semimetals, i.e., boron, silicon, germanium, arsenic, antimony, and tellurium. be.
• the metal atoms constituting the metal-containing compound are not particularly limited, and examples thereof include metal atoms of Groups 3 to 16.
• Specific examples of the metal atoms include metal atoms of Group 4 such as titanium, zirconium, and hafnium, metal atoms of Group 5 such as tantalum, metal atoms of Group 6 such as chromium and tungsten, metal atoms of Group 8 such as iron and ruthenium, metal atoms of Group 9 such as cobalt, metal atoms of Group 10 such as nickel, metal atoms of Group 11 such as copper, metal atoms of Group 12 such as zinc, cadmium, and mercury, metal atoms of Group 13 such as boron, aluminum, gallium, indium, and thallium, metal atoms of Group 14 such as germanium, tin, and lead, metal atoms of Group 15 such as antimony and bismuth, and metal atoms of Group 16 such as tellurium.
• the metal atoms constituting the [P] metal-containing compound may include a first metal atom belonging to Group 4, Group 12, or Group 14 in the periodic table and belonging to Period 4, Period 5, or Period 6. That is, the metal atom may include at least one of titanium, zirconium, hafnium, zinc, cadmium, mercury, germanium, tin, and lead.
• the [P] metal-containing compound includes a first metal atom, which further promotes the emission of secondary electrons in the exposed area of the resist film and the change in the solubility of the [P] metal-containing compound in the developer due to these secondary electrons. As a result, the pattern rectangularity can be improved. Tin or zirconium is preferable as the first metal atom.
• the [P] metal-containing compound preferably further contains other atoms other than the metal atom.
• the other atoms include carbon atoms, hydrogen atoms, oxygen atoms, nitrogen atoms, phosphorus atoms, sulfur atoms, halogen atoms, etc., and among these, carbon atoms, hydrogen atoms, and oxygen atoms are preferred.
• the other atoms in the [P] metal-containing compound may be used alone or in combination of two or more types.
• the lower limit of the content of the metal-containing compound [P] in the composition for forming a metal-containing resist film, calculated as the solid content, is preferably 70 mass%, more preferably 90 mass%, and even more preferably 95 mass%.
• the content may be 100 mass%.
• the solid content in the composition for forming a metal-containing resist film refers to the components other than the solvent [Q] described below.
• the metal-containing compound [P] can be obtained, for example, by subjecting a metal compound having a metal atom and a hydrolyzable group, a hydrolysate of this metal compound, a hydrolysis condensation product of the above metal compound, or a combination thereof to a hydrolysis condensation reaction, a ligand exchange reaction, etc.
• the above metal compounds can be used alone or in combination of two or more.
• the metal-containing compound [P] is preferably derived from a metal compound having a metal atom and a hydrolyzable group represented by the following formula (4) (hereinafter, also referred to as "metal compound (1)"). By using such metal compound (1), a stable metal-containing compound [P] can be obtained.
• M is a metal atom.
• L 1 is a ligand or a monovalent organic group having 1 to 20 carbon atoms. a1 is an integer from 0 to 6. When a1 is 2 or more, multiple L 1s may be the same or different.
• Y is a monovalent hydrolyzable group. b1 is an integer from 2 to 6. Multiple Ys may be the same or different. Note that L 1 is a ligand or an organic group that does not correspond to Y.
• the metal atom represented by M is preferably a first metal atom, more preferably tin.
• the hydrolyzable group represented by Y can be changed appropriately according to the metal atom represented by M, but examples include substituted or unsubstituted ethynyl groups, halogen atoms, alkoxy groups, acyloxy groups, substituted or unsubstituted amino groups, etc.
• the substituents in the substituted or unsubstituted ethynyl group and substituted or unsubstituted amino group represented by Y are preferably monovalent hydrocarbon groups having 1 to 20 carbon atoms, more preferably linear hydrocarbon groups, and even more preferably alkyl groups.
• halogen atoms represented by Y include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms. Among these, chlorine atoms are preferred.
• Examples of the alkoxy group represented by Y include methoxy, ethoxy, n-propoxy, i-propoxy, and n-butoxy groups. Among these, ethoxy, i-propoxy, and n-butoxy groups are preferred.
• Examples of the acyloxy group represented by Y include a formyl group, an acetoxy group, an ethyloxy group, a propionyloxy group, an n-butyryloxy group, a t-butyryloxy group, a t-amyloxy group, an n-hexanecarbonyloxy group, and an n-octanecarbonyloxy group.
• an acetoxy group is preferred.
• Examples of the substituted or unsubstituted amino group represented by Y include an amino group, a methylamino group, a dimethylamino group, a diethylamino group, and a dipropylamino group. Among these, the dimethylamino group and the diethylamino group are preferred.
• the hydrolyzable group represented by Y is preferably a substituted or unsubstituted ethynyl group, a halogen atom, an alkoxy group, an acyloxy group, or a substituted or unsubstituted amino group, and more preferably a halogen atom.
• the hydrolyzable group represented by Y is preferably a halogen atom, an alkoxy group, an acyloxy group, or a substituted or unsubstituted amino group.
• the hydrolyzable group represented by Y is preferably a halogen atom, an alkoxy group, or an acyloxy group.
• the ligand represented by L1 includes monodentate and polydentate ligands.
• Examples of the monodentate ligand include hydroxo ligands, nitro ligands, and ammonia.
• polydentate ligand examples include hydroxy acid esters, ⁇ -diketones, ⁇ -ketoesters, malonic acid diesters in which the carbon atom at the ⁇ -position may be substituted, and hydrocarbons having a ⁇ bond, or ligands derived from these compounds, and diphosphines.
• diphosphines examples include 1,1-bis(diphenylphosphino)methane, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane, 2,2'-bis(diphenylphosphino)-1,1'-binaphthyl, and 1,1'-bis(diphenylphosphino)ferrocene.
• Examples of the monovalent organic group represented by L 1 include the same groups as those exemplified as the monovalent organic group having 1 to 20 carbon atoms represented by Y in the above formula (1-1) and formula (1-2).
• the lower limit of the number of carbon atoms of the monovalent organic group represented by L 1 is preferably 2, and more preferably 3.
• the upper limit of the number of carbon atoms is preferably 10, and more preferably 5.
• the monovalent organic group represented by L 1 is preferably a substituted or unsubstituted hydrocarbon group, more preferably a substituted or unsubstituted linear hydrocarbon group or a substituted or unsubstituted aromatic hydrocarbon group, further preferably a substituted or unsubstituted alkyl group or a substituted or unsubstituted aralkyl group, and particularly preferably an isopropyl group or a benzyl group.
• 1 and 2 are preferred, and 1 is more preferred.
• an integer between 2 and 4 is preferable.
• the content of metal atoms in the [P] metal-containing compound can be increased, and the generation of secondary electrons by the [P] metal-containing compound can be more effectively promoted. As a result, the rectangularity of the pattern can be improved.
• metal compound (1) a metal halide compound is preferred, and isopropyltin trichloride or benzyltin trichloride is more preferred.
• a method for carrying out the hydrolysis and condensation reaction of metal compound (1) includes, for example, stirring metal compound (1) in water or a solvent containing water in the presence of a base such as tetramethylammonium hydroxide, which is used as needed. In this case, other compounds having hydrolyzable groups may be added as needed.
• the lower limit of the amount of water used in this hydrolysis and condensation reaction is preferably 0.2 times by mol, more preferably 1 time by mol, and even more preferably 3 times by mol, relative to the hydrolyzable groups of metal compound (1) and the like.
• a compound capable of becoming a multidentate ligand represented by L1 in the compound of the above formula (4) or a compound capable of becoming a bridging ligand may be added.
• the compound capable of becoming a bridging ligand include compounds having two or more coordinating groups such as a hydroxy group, an isocyanate group, an amino group, an ester group, and an amide group.
• the lower limit of the temperature for the synthesis reaction of the metal-containing compound is preferably 0°C, and more preferably 10°C.
• the upper limit of the above temperature is preferably 150°C, more preferably 100°C, and even more preferably 50°C.
• the lower limit of the time for the synthesis reaction of the [P] metal-containing compound is preferably 1 minute, more preferably 10 minutes, and even more preferably 1 hour.
• the upper limit of the time is preferably 100 hours, more preferably 50 hours, even more preferably 24 hours, and particularly preferably 4 hours.
• the solvent [Q] is preferably an organic solvent.
• this organic solvent include the same solvents as those exemplified as the solvent [B] in the above-mentioned metal-containing resist underlayer film-forming composition.
• an ether solvent is preferred, and propylene glycol monoethyl ether is more preferred.
• composition for forming a metal-containing resist film may contain other optional components such as a compound that can serve as a ligand, a surfactant, and the like, in addition to the metal-containing compound (P) and the solvent (Q).
• Examples of the compound that can be the above-mentioned ligand include compounds that can be polydentate ligands or bridging ligands, and specific examples thereof include compounds similar to the compounds that can be polydentate ligands or bridging ligands exemplified in the synthesis method for the metal-containing compound [P].
• the surfactant is a component that acts to improve the coating property, striation, etc.
• the surfactant include nonionic surfactants such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, polyethylene glycol dilaurate, and polyethylene glycol distearate, as well as commercial products such as KP341 (Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, and No.
• suitable inks include EFTOP EF301, EF303, and EF352 (Tochem Products), Megafac F171 and F173 (Dainippon Ink and Chemicals), Fluorad FC430 and FC431 (Sumitomo 3M), Asahiguard AG710, Surflon S-382, SC-101, SC-102, SC-103, SC-104, SC-105, and SC-106 (Asahi Glass Co., Ltd.), and the like.
• the metal-containing resist film forming composition can be prepared, for example, by mixing the metal-containing compound [P] and other optional components such as the solvent [Q] at a predetermined ratio, and preferably filtering the resulting mixture through a membrane filter with a pore size of 0.4 ⁇ m or less.
• the metal-containing resist film forming composition contains the metal-containing compound [P] and the solvent [Q]
• the content ratio of the metal-containing compound [P] in the components other than the solvent [Q] in the metal-containing resist film forming composition is preferably 50% by mass or more.
• the lower limit of the content ratio of the metal-containing compound [P] is more preferably 60% by mass, and even more preferably 70% by mass.
• the upper limit of the content ratio is preferably 100% by mass, but may be 98% by mass or may be 95% by mass.
• the metal-containing resist film formed by the above-mentioned metal-containing resist film forming composition coating process is exposed to extreme ultraviolet rays (wavelength 13.5 nm, etc., also referred to as "EUV").
• EUV extreme ultraviolet rays
• This process causes a difference in solubility in a developer between the exposed and unexposed parts of the resist film.
• the exposure conditions can be appropriately determined depending on the type of the resist film forming composition used, etc.
• PEB post-exposure baking
• the PEB temperature and PEB time can be appropriately determined depending on the type of resist film-forming composition used, etc.
• the lower limit of the PEB temperature is preferably 50°C, and more preferably 70°C.
• the upper limit of the PEB temperature is preferably 200°C, and more preferably 150°C.
• the lower limit of the PEB time is preferably 10 seconds, and more preferably 30 seconds.
• the upper limit of the PEB time is preferably 600 seconds, and more preferably 300 seconds.
• the exposed metal-containing resist film is developed.
• the developer used in this development include an alkaline aqueous solution (alkaline developer), an organic solvent-containing solution (organic solvent developer), and the like.
• alkaline developer an alkaline aqueous solution
• organic solvent developer organic solvent developer
• the solubility of the exposed part of the metal-containing resist film in an alkaline aqueous solution is increased, so that the exposed part is removed by performing alkaline development to form a positive resist pattern.
• the developer used in alkaline development is not particularly limited, and any known developer can be used.
• developers for alkaline development include aqueous alkaline solutions in which at least one alkaline compound such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, ethyldimethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH), pyrrole, piperidine, choline, 1,8-diazabicyclo-[5.4.0]-7-undecene, and 1,5-diazabicyclo-[4.3.0]-5-nonene is dissolved.
• TMAH tetramethylammonium hydroxide
• TMAH 1,8-diazabicyclo-[5.4.0]-7-unde
• examples of the developer include the same solvents as those exemplified in the above-mentioned metal-containing resist underlayer film-forming composition.
• organic solvent ketone-based solvents and ester-based solvents are preferred, and 2-heptanone and propylene glycol monomethyl ether acetate are more preferred.
• the development of the exposed metal-containing resist film is preferably performed using an organic solvent.
• washing and/or drying may be performed after the development.
• Metal-containing resist underlayer film pattern formation process In this step, the metal-containing resist underlayer film is etched using the resist pattern as a mask to form a metal-containing resist underlayer film pattern.
• etching can be either dry etching or wet etching, but dry etching is preferred.
• Dry etching can be carried out, for example, by using a known dry etching device.
• the etching gas used in dry etching can be appropriately selected according to the element composition of the metal-containing resist underlayer film to be etched, and can be, for example, fluorine-based gas such as CHF 3 , CF 4 , C 2 F 6 , C 3 F 8 , SF 6 , chlorine-based gas such as Cl 2 , BCl 3 , oxygen-based gas such as O 2 , O 3 , H 2 O , H 2 , NH 3 , CO, CO 2 , CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HF, HI, HBr, HCl, NO, or other reducing gas, inert gas such as He, N 2 , Ar, or other gas. These gases can also be used in a mixture.
• fluorine-based gas such as CHF 3
• etching is performed using the above-mentioned metal-containing resist underlayer film pattern as a mask. More specifically, etching is performed once or multiple times using the pattern formed in the metal-containing resist underlayer film obtained in the above-mentioned metal-containing resist underlayer film pattern forming step as a mask to obtain a patterned substrate.
• the organic underlayer film is etched using the metal-containing resist underlayer film pattern as a mask to form a pattern in the organic underlayer film, and then the substrate is etched using this organic underlayer film pattern as a mask to form a pattern on the substrate.
• etching can be either dry etching or wet etching, but dry etching is preferred.
• the dry etching used to form a pattern in the organic underlayer film can be performed using a known dry etching device.
• the etching gas used in the dry etching can be appropriately selected depending on the elemental composition of the metal-containing resist underlayer film and the organic underlayer film to be etched.
• the etching gas the above-mentioned gases for etching the metal-containing resist underlayer film can be suitably used, and these gases can also be used in mixture.
• An oxygen-based gas is usually used for dry etching of the organic underlayer film using the metal-containing resist underlayer film pattern as a mask.
• the dry etching used to form a pattern on a substrate using the organic underlayer film pattern as a mask can be performed using a known dry etching device.
• the etching gas used in the dry etching can be appropriately selected depending on the elemental composition of the organic underlayer film and the substrate to be etched, and examples of the etching gas include the same etching gases as those exemplified above as the etching gas used in the dry etching of the metal-containing resist underlayer film. Etching may be performed multiple times using different etching gases. After the above etching, a semiconductor substrate having a predetermined pattern can be manufactured.
• the metal-containing resist underlayer film-forming composition contains a compound [A] and a solvent [B].
• the metal-containing resist underlayer film-forming composition used in the above-mentioned method for producing a semiconductor substrate can be suitably used.
• the average molecular weight (Mw) of the intermediate compound (a) and compound [A], the concentration of the solution of compound [A], and the average thickness of the film were measured by the following methods.
• the average thickness of the film was measured using a spectroscopic ellipsometer (J.A. WOOLLAM's "M2000D"). In detail, the film thickness was measured at 9 arbitrary positions at 5 cm intervals including the center of the film formed on the silicon wafer, and the average value of the film thicknesses was calculated to obtain the average thickness.
• A-1 to A-26 Compounds (A-1) to (A-26) synthesized above AJ-1 to AJ-3: Compounds (AJ-1) to (AJ-3) synthesized above for comparison
• C-1 orthoester: trimethyl orthoformate
• C-2 acid generator
• C-3 basic compound: a compound represented by the following formula (C-3)
• composition (J-1) 0.50 parts by mass of (A-1) as the compound [A] (excluding the solvent) and 99.50 parts by mass of (B-1) as the solvent [B] (including the solvent (B-1) contained in the solution of the compound [A]) were mixed, and the resulting solution was filtered through a polytetrafluoroethylene (PTFE) membrane filter having a pore size of 0.2 ⁇ m to prepare a silicon-containing composition (J-1).
• PTFE polytetrafluoroethylene
• Examples 1-2 to 1-32, Comparative Examples 1-1 to 1-3] (Preparation of Compositions (J-2) to (J-32) and (j-1) to (j-3)) Compositions (J-2) to (J-32) of Examples 1-2 to 1-32 and compositions (j-1) to (j-3) of Comparative Examples 1-1 to 1-3 were prepared in the same manner as in Example 1-1, except that the types and amounts of each component shown in Table 3 were used. In Table 3, "-" indicates that the corresponding component was not used.
• Compound (S-1) was an oxide hydroxide product of a hydrolysis product of isopropyltin trichloride (having a structural unit of i-PrSnO (3/2-x/2) (OH) x (0 ⁇ x ⁇ 3)).
• an organic underlayer film forming material (“HM8006” by JSR Corporation) was applied by a spin coating method using a spin coater ("CLEAN TRACK ACT12" by Tokyo Electron Limited), and then heated at 250°C for 60 seconds to form an organic underlayer film having an average thickness of 100 nm.
• the metal-containing resist underlayer film forming composition prepared above was applied, heated at 220°C for 60 seconds, and then cooled at 23°C for 30 seconds to form a metal-containing resist underlayer film having an average thickness of 5 nm.
• resist composition (R-1) was applied by a spin coating method using the spin coater, and after a predetermined time had elapsed, the resist film was heated at 90°C for 60 seconds, and then cooled at 23°C for 30 seconds to form a resist film having an average thickness of 35 nm.
• An EUV scanner (“TWINSCAN” by ASML) was used.
• the resist film was exposed to light using a 1:1 line and space mask with a line width of 25 nm on the wafer (NXE:3300B) (NA 0.3, sigma 0.9, quadrupole illumination). After exposure, the substrate was heated at 110°C for 60 seconds, and then cooled at 23°C for 60 seconds.
• Dev-1 2-heptanone (20-25°C) or Dev-2: propylene glycol monomethyl ether acetate (20-25°C) was used as a developer, and the substrate was developed by the paddle method, followed by drying to obtain an evaluation substrate on which a resist pattern was formed.
• a scanning electron microscope (Hitachi High-Tech's "SU8220") was used to measure and observe the resist pattern of the evaluation substrate.
• the pattern rectangularity was evaluated as "A" (good) when the cross-sectional shape of the pattern was rectangular, "B” (slightly good) when the cross-sectional shape of the pattern had a skirt, and "C” (bad) when the pattern had a residue (defect).
• the metal-containing resist underlayer film formed from the composition of the example was able to exhibit superior pattern rectangularity compared to the metal-containing resist underlayer film formed from the composition of the comparative example.
• the semiconductor substrate manufacturing method and metal-containing resist underlayer film forming composition of the present invention can form a metal-containing resist underlayer film with excellent pattern rectangularity. Therefore, they can be suitably used for manufacturing semiconductor substrates, etc.

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