WO2024195369A1 - 研磨パッド及びその製造方法 - Google Patents

研磨パッド及びその製造方法 Download PDF

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Publication number
WO2024195369A1
WO2024195369A1 PCT/JP2024/005037 JP2024005037W WO2024195369A1 WO 2024195369 A1 WO2024195369 A1 WO 2024195369A1 JP 2024005037 W JP2024005037 W JP 2024005037W WO 2024195369 A1 WO2024195369 A1 WO 2024195369A1
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Prior art keywords
polishing
pores
abrasive particles
polishing pad
polished
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PCT/JP2024/005037
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English (en)
French (fr)
Japanese (ja)
Inventor
誠 佐藤
崇将 後藤
規之 阿部
正俊 岸本
綾真 伊藤
久徳 黒部
敬 上野
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ノリタケ株式会社
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Priority to JP2025508221A priority Critical patent/JPWO2024195369A1/ja
Publication of WO2024195369A1 publication Critical patent/WO2024195369A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing pad and a method for manufacturing the same.
  • Patent documents 1 to 3 disclose conventional polishing pads. As shown in FIG. 22, these polishing pads have a base material 90 and countless abrasive particles 92.
  • the base material 90 is mainly made of resin, and has multiple pores 90a formed therein. Examples of resins that are used include polyvinylidene fluoride, epoxy resin, and PES (polyethersulfone).
  • the abrasive particles 92 are made of silica or the like, and are held within the base material 90 or the pores 90a.
  • polishing pads are manufactured through the first, second, third and fourth steps.
  • a paste containing a base resin, abrasive particles 92 and a solvent is prepared.
  • the paste is molded into a sheet-like molded body.
  • the molded body is immersed in a replacement liquid, and the solvent in the molded body is replaced with the replacement liquid to form pores 90a and obtain a replacement body.
  • the replacement liquid is removed from the replacement body to obtain a polishing pad.
  • the polishing pad has its front and/or back surface dressed by a dresser or the like to form a polishing surface 94.
  • the polishing pad obtained in this manner has the abrasive particles 92 held semi-fixed by the base material 90, and therefore can carry out a polishing method using a CMP (Chemical Mechanical Polishing) method while employing an abrasive liquid that does not contain abrasive particles 92 or simply water as the abrasive liquid.
  • CMP Chemical Mechanical Polishing
  • it compared to a free abrasive polishing method that uses a pad that does not contain abrasive particles and an abrasive liquid that contains abrasive particles, it has the advantageous effects of simplifying the management of the abrasive liquid after polishing and simplifying the cleaning process of the polished object after polishing.
  • the above conventional polishing pads exhibit better polishing capabilities. That is, with conventional polishing pads, even if the polishing pressure is increased to increase the amount of polishing of the workpiece per hour, it is difficult to achieve a sufficiently high polishing rate. Furthermore, with conventional polishing pads, the time during which the workpiece can be polished at a certain polishing rate is short. In other words, conventional polishing pads have a short lifespan and require early dressing to restore a reduced polishing rate, resulting in poor workability.
  • the present invention was made in consideration of the above-mentioned conventional situation, and the problem to be solved is to provide a polishing pad that can exhibit superior polishing ability while maintaining the advantageous effects of a polishing pad, such as simplifying the management of the polishing liquid after polishing and simplifying the cleaning process of the polished object after polishing.
  • the polishing pad of the present invention is a polishing pad that has a base material mainly made of resin and having a plurality of pores formed therein, and a countless number of abrasive particles held in the base material or in the pores, and that constitutes a polishing surface for polishing an object to be polished,
  • the object to be polished is made of a solid material that is amorphous, crystalline, or an amorphous-crystalline composite material;
  • Each of the abrasive particles includes specific particles having a chemical mechanical polishing effect on the object to be polished,
  • the base material is characterized in that a plurality of large pores are formed which can be opened onto the polishing surface, which communicate with the plurality of pores, and which have a larger volume than each of the pores.
  • the polishing pad of the present invention has not only multiple pores formed in the base material, but also multiple large pores that communicate with the multiple small pores.
  • the large pores have a larger volume than each of the small pores.
  • the front and/or back surface of the polishing pad is dressed with a dresser or the like, and the large pores can be opened on the polishing surface.
  • the polishing pad if the polishing pressure is increased to increase the amount of polishing of the object to be polished per hour, the polishing rate is also sufficiently high.
  • the time during which the object to be polished can be polished at a certain polishing rate is longer than with conventional polishing pads. In other words, this polishing pad has a long life and does not require frequent dressing, and therefore exhibits excellent workability.
  • this polishing pad also has a base material that holds the abrasive particles semi-fixed, so polishing methods using the CMP method can be carried out while using a polishing liquid that does not contain abrasive particles or simply water as the polishing liquid. Therefore, polishing an object to be polished with this polishing pad has the advantageous effects of simplifying the management of the polishing liquid after polishing and simplifying the cleaning process of the object to be polished after polishing, compared to polishing the object to be polished using a free abrasive polishing method.
  • this polishing pad can provide superior polishing performance while maintaining the beneficial effects of a polishing pad, such as simplifying the management of the polishing liquid after polishing and simplifying the cleaning process of the polished object after polishing.
  • the inventors speculate that the reason why the polishing pad of the present invention can exhibit high polishing ability is due to the micro-pumping effect of the abrasive particles described below. That is, while the polishing pad polishes the object by pressing the object to be polished against the polishing surface with a predetermined load and moving relative to the object to be polished, abrasive particles are replenished from the base material or pores into the large holes opening on the polishing surface. During this time, the abrasive particles remaining in the large holes opening on the polishing surface move to the polishing surface.
  • the abrasive particles consist of non-active abrasive particles that remain in the base material or pores, standby abrasive particles that are replenished from the base material or pores into the large holes and remain in the large holes, and active abrasive particles that move from the large holes to the polishing surface.
  • the active abrasive particles present on the polishing surface are increased compared to conventional polishing pads due to this micro-pumping effect of the abrasive particles, and therefore the polishing ability is increased.
  • the abrasive particles 92 consist of non-active abrasive particles 92a that remain in the base material 90 and pores 90a, standby abrasive particles 92b that are dressed and exposed to the polishing surface 94 but do not contribute to polishing, and active abrasive particles 92c that are dressed and exposed to the polishing surface 94 and contribute to polishing.
  • the non-active abrasive particles 92a that remain in the base material 90 and pores 90a are difficult to move to the polishing surface 94, there are few standby abrasive particles 92b, and only the active abrasive particles 92c exert a chemical mechanical polishing effect on the polished object W. For this reason, even if the conventional polishing pad polishes the polished object W by moving relative to the polished object W while pressing the polished object W against the polishing surface 94 with a predetermined load, the active abrasive particles 92c present on the polishing surface 94 are difficult to replenish. For this reason, conventional polishing pads have fewer active abrasive particles 92c present on the polishing surface 94 than the polishing pads of the present invention, resulting in lower polishing ability.
  • each abrasive particle contains a specific particle that has a CMP effect on the object to be polished.
  • the method for producing a polishing pad of the present invention includes a first step of preparing a paste containing a base resin, abrasive particles, and a solvent; A second step of forming the paste into a sheet-like molded body; a third step of immersing the molded body in a replacement liquid to replace the solvent in the molded body with the replacement liquid to form pores and obtain a replacement body; and a fourth step of removing the replacement liquid from the replacement body to obtain a polishing pad having a base material mainly composed of the base material resin and having a plurality of pores formed therein, and a countless number of abrasive particles held in the base material or the pores.
  • the abrasive particles include specific particles that have a chemical mechanical abrasive action on solids of amorphous, crystalline, or amorphous-crystalline composite materials;
  • the paste in the third step contains a pore-forming agent capable of forming numerous large pores that communicate with the plurality of pores and have a volume larger than that of each of the pores.
  • the manufacturing method of the present invention allows the manufacture of the polishing pad of the present invention.
  • a water-soluble pore-forming agent can be used.
  • water-soluble pore-forming agents that can be used include powdered sugar made by grinding granulated sugar into a powder, cornstarch, etc. The size of the large pores can be adjusted by adjusting the particle size of the pore-forming agent.
  • the polishing pad of the present invention can simplify the management of the polishing liquid after polishing, and can exhibit superior polishing ability while maintaining the advantageous effects of the polishing pad, such as simplifying the cleaning process of the polished object after polishing. Furthermore, the manufacturing method of the present invention can manufacture the polishing pad of the present invention.
  • FIG. 1 is a schematic enlarged cross-sectional view of a polishing pad according to Example 1-1.
  • FIG. 2 is a 30x SEM photograph of the polishing surface of the polishing pad of Example 1-1 in Test 1.
  • FIG. 3 is a 500x SEM photograph of the polishing surface of the polishing pad of Example 1-1 in Test 1.
  • FIG. 4 is a graph showing the relationship between the polishing pressure and the polishing rate in the polishing methods of Example 1-1, Comparative Example 1-1, and Comparative Example 1-2 in Test 1.
  • FIG. 5 is a graph showing the relationship between the polishing pressure and the surface roughness in the polishing methods of Example 1-1, Comparative Example 1-1, and Comparative Example 1-2 in Test 1.
  • FIG. 1 is a schematic enlarged cross-sectional view of a polishing pad according to Example 1-1.
  • FIG. 2 is a 30x SEM photograph of the polishing surface of the polishing pad of Example 1-1 in Test 1.
  • FIG. 3 is a 500x SEM photograph of the polish
  • FIG. 6 is a graph showing the relationship between the polishing time and the polishing rate in the polishing methods of Example 1-1 and Comparative Example 1-2 in Test 2.
  • FIG. 7 is an enlarged cross-sectional view similar to FIG. 1, showing the polishing pad of Example 1-1.
  • FIG. 8 is an image obtained by differentiating (Sobel processed) a white light interference microscope photograph of the polished surface of the polished object cleaned after the polishing method of Example 1-1 was carried out in Test 3.
  • FIG. 9 is an image obtained by differentiating (Sobel processed) a white light interference microscope photograph of the polished surface of the polished object cleaned after the polishing method of Comparative Example 1-1 was carried out in Test 3.
  • FIG. 8 is an image obtained by differentiating (Sobel processed) a white light interference microscope photograph of the polished surface of the polished object cleaned after the polishing method of Comparative Example 1-1 was carried out in Test 3.
  • FIG. 9 is an image obtained by differentiating (Sobel processed) a white light interference microscope photograph of the polished surface of the polished object cleaned after the
  • FIG. 10 is a 100-times SEM photograph of the polishing surface of the polishing pad in Test 4 that was washed after the polishing method of Example 1-1 was carried out.
  • FIG. 11 is a SEM photograph at 1000 times magnification of the polished surface of the polishing pad washed after the polishing method of Example 1-1 in Test 4 was carried out.
  • FIG. 12 is a graph showing the relationship between the average particle size of abrasive particles and the polishing rate in the polishing methods of Example 1-1, Comparative Example 1-1, and Comparative Example 1-2 in Test 5.
  • FIG. 13 is a graph showing the relationship between the average particle size of abrasive particles and the surface roughness in the polishing methods of Example 1-1, Comparative Example 1-1, and Comparative Example 1-2 in Test 5.
  • FIG. 12 is a graph showing the relationship between the average particle size of abrasive particles and the surface roughness in the polishing methods of Example 1-1, Comparative Example 1-1, and Comparative Example 1-2 in Test 5.
  • FIG. 14 is a graph showing the relationship between the ratio of resin to pores and the polishing rate in Test 6.
  • FIG. 15 is a graph showing the relationship between the ratio of resin to pores and durometer hardness in Test 6.
  • FIG. 16 is a graph showing the polishing rates in the polishing methods of Example 2-1 and Comparative Example 2-1 in Test 7.
  • FIG. 17 is a graph showing the surface roughness in the polishing methods of Example 2-1 and Comparative Example 2-1 in Test 7.
  • FIG. 18 is a graph showing the polishing rates in the polishing methods of Example 2-1, Comparative Example 2-2, and Comparative Example 2-1 in Test 8.
  • FIG. 19 is a graph showing the surface roughness in the polishing methods of Example 2-1, Comparative Example 2-2, and Comparative Example 2-1 in Test 8.
  • FIG. 20 is a graph showing the relationship between the average particle size of abrasive particles and the polishing rate in the polishing methods of Example 3-1, Comparative Example 3-1, and Comparative Example 3-2 in Test 9.
  • FIG. 21 is a graph showing the relationship between the average particle size of abrasive particles and the surface roughness in the polishing methods of Example 3-1, Comparative Example 3-1, and Comparative Example 3-2 in Test 9.
  • FIG. 22 is a schematic enlarged cross-sectional view of a conventional polishing pad.
  • the resins that make up the base material can be polyethersulfone (PES), polysulfone (PSU), polyvinylidene fluoride (PVDF), polyvinyl fluoride, vinyl fluoride-hexafluoropropylene copolymer, vinylidene fluoride-hexafluoropropylene copolymer, polyethylene, polymethyl methacrylate, polycarbonate, etc. One of these may be used, or two or more may be mixed.
  • PES polyethersulfone
  • PSU polysulfone
  • PVDF polyvinylidene fluoride
  • PVDF polyvinyl fluoride
  • vinyl fluoride-hexafluoropropylene copolymer vinylidene fluoride-hexafluoropropylene copolymer
  • polyethylene polymethyl methacrylate
  • polycarbonate etc.
  • One of these may be used, or two or more may be mixed.
  • the solvent can be anything that dissolves the resin that makes up the base material, such as N-methyl-2-pyrrolidone, 2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, or dimethylsulfoxide.
  • the object to be polished can be, specifically, synthetic quartz, a lithium tantalate wafer, a silicon wafer, or quartz crystal. These are examples of solids that are amorphous, crystalline, or amorphous-crystalline composite materials.
  • the specific particles may be at least one of ceria (cerium oxide, CeO2 ), red iron oxide (iron trioxide, Fe2O3 ), and manganese oxide (iron trioxide, Mn2O3 ) .
  • the glass may be amorphous, crystalline, or an amorphous-crystalline composite material. It is known that red iron oxide has a CMP effect on glass, for example, from “Red Iron Ore as an Abrasive” (Funahashi Wataru, Precision Machinery, 19 (1940), p. 342) and "Abrasive for Glass” (Hanawa Kenzo, NEW GLASS, Vol. 27 (2012), No. 106).
  • manganese oxide has a CMP effect on glass is known from, for example, JP-A-10-071571, JP-A-2002-210640, JP-A-2014-084420, JP-A-2014-118468, JP-A-2015-140402, and the like.
  • the specific particles may be at least one of silica (silicon dioxide, SiO2 ), ceria (cerium oxide, CeO2 ), titania ( TiO2 ), chromium oxide ( III ) ( Cr2O3 ), etc.
  • the pores have an inner diameter of 7 to 25 ⁇ m where they communicate with the large pores, that the large pores have a length of 70 to 500 ⁇ m at the point where they have the longest inner diameter, and that the abrasive particles are 0.06 to 1.71 ⁇ m. It is estimated that if these sizes are within each range, the micropumping effect of the abrasive particles is likely to occur.
  • the ratio of the base material to the pores and large pores is 0.205 volumetric ratio or less, and the durometer hardness (D scale) is 39.7 or less. It is presumed that these conditions cause the base material to deform, which makes it easier for the micropumping effect of the abrasive particles to occur.
  • the base resin, abrasive particles, and solvent may be mixed at the same time to form a paste, but it is preferable to mix the abrasive particles and solvent in advance to disperse the abrasive particles in the solvent, and then mix this dispersion into the base resin to form a paste. This makes it easier for the abrasive particles to reside in the pores, making it easier for the micropumping effect to occur.
  • additives may be added to the paste as necessary.
  • additives include glycerin, which is used to adjust the solubility of the resin in the solvent.
  • the second step is not particularly limited, and involves forming the material into a sheet-like molded product using a molding device such as a T-die.
  • This molding method is not limited to this as long as it can achieve a uniform thickness to a certain extent.
  • the molded body is immersed in a water tank filled with temperature-controlled ion-exchanged water for a predetermined period of time to induce a nucleation-growth type phase separation process.
  • a nucleation-growth type phase separation process results in a large number of isolated, spherical, irregularly sized and positioned relative to one another solvent-rich phases containing abrasive particles being dispersed in the resin-rich phase.
  • the solvent in the solvent-rich phase is replaced by water by diffusing into the replacement liquid.
  • an aqueous liquid such as ion-exchanged water is used as the replacement liquid, and the molded body is immersed in this replacement liquid, which disperses the solvent-rich phase in the resin-rich phase through a nucleation-growth type phase separation process, and at the same time, the solvent in the solvent-rich phase is replaced with the replacement liquid, thereby removing the solvent from the molded body.
  • each isolated solvent-rich phase is connected to the outside of the molded body through pores formed in the resin-rich phase, and the solvent is replaced with the replacement liquid through the pores.
  • the resin-rich phase shrinks and hardens, and minute continuous pores are formed in the resin-rich phase.
  • an aqueous liquid such as ion-exchanged water as the replacement liquid and immersing the molded body in this replacement liquid, the water-soluble pore-forming agent can also be removed at the same time.
  • the molded body from which the solvent and pore-forming agent have been removed undergoes the fourth process to become a polishing pad.
  • the polishing pad has its front and/or back surface dressed with a dresser or the like to form a polishing surface.
  • Example 1-1 The above base resin, abrasive particles, solvent, and pore-forming agent were mixed in the mixing ratio (parts by mass) shown in Table 1.
  • Example 1-1 the abrasive particles were first dispersed in the solvent, and this dispersion and the pore-forming agent were mixed into the base resin.
  • Comparative Example 1-2 in which the polishing pad did not have large pores 10b, the abrasive particles were first dispersed in the solvent, and this dispersion was mixed into the base resin. In this way, the pastes of Example 1-1 and Comparative Example 1-2 were obtained.
  • ⁇ Third step> Each molded body was immersed in ion-exchanged water stored in a water tank and adjusted in temperature for a predetermined time. This caused a nucleation-growth type phase separation process in each molded body, dispersing a large number of spherical, isolated solvent-rich phases in the resin-rich phase, and replacing the solvent in each molded body with ion-exchanged water to remove the solvent from each molded body. In the molded body of Example 1-1, the pore-forming agent was also removed at this time. In this way, each substituted body was obtained.
  • Each of the resulting substituted bodies was left in the air at room temperature for about 2 days to remove moisture from each of the substituted bodies, thereby obtaining polishing pads of Example 1-1 and Comparative Example 1-2.
  • Each polishing pad was a disk shape with a diameter of 300 mm and a thickness of 2 mm.
  • the surfaces of the polishing pads of Example 1-1 and Comparative Example 1-2 are dressed with a dresser to form polishing surfaces 14, 94 for polishing the workpiece W, as shown in Figures 1 and 22.
  • the dresser has #400 diamond pellets.
  • the polishing pad of Example 1-1 has a base material 10 and abrasive particles 12 as shown in Figure 1.
  • the base material 10 is made of resin, and has a plurality of pores 10a and a plurality of large pores 10b formed therein.
  • the volume percentages of the resin, abrasive particles, pores 10a, and large pores 10b in the polishing pad of Example 1-1 are as shown in Table 2.
  • the durometer hardness (D scale) of the polishing pad of Example 1-1 is also shown in Table 2.
  • the polishing pad of Comparative Example 1-2 has a base material 90 and abrasive particles 92, as shown in FIG. 22.
  • the base material 90 is made of resin, and has a number of pores 90 formed therein.
  • the paste of Comparative Example 1-2 did not contain a pore-forming agent, and therefore the base material 90 does not have large pores 10b like the base material 10 of Example 1-1.
  • the volume percentages of the resin, abrasive particles, and pores 90 in the polishing pad of Comparative Example 1-2 are as shown in Table 2.
  • the durometer hardness (D scale) of the polishing pad of Comparative Example 1-2 is also shown in Table 2.
  • the polishing pads of Example 1-1 and Comparative Example 1-2 were dressed for 2 minutes to shape the polishing surfaces 14 and 94, and then polishing tests were conducted under the following conditions to investigate the relationship between the polishing pressure (kPa) and the polishing rate ( ⁇ m/min) and the relationship between the polishing pressure and the surface condition of the workpiece W after processing.
  • the surface condition of the workpiece W after processing was evaluated by surface roughness Sa (nm).
  • the polishing test using the polishing pad of Example 1-1 was the polishing method of Example 1-1
  • the polishing test using the polishing pad of Comparative Example 1-2 was the polishing method of Comparative Example 1-2.
  • a polishing test was also conducted under the above conditions using a free abrasive polishing method that used a hard polyurethane pad that did not contain abrasive particles and a polishing solution that contained 5% by mass of ceria.
  • This free abrasive polishing test was designated as the polishing method of Comparative Example 1-1. The results are shown in Figures 4 and 5, and Tables 3 and 4.
  • the polishing method of Example 1-1 achieves a surface roughness Sa that is almost the same as that of the polishing method of Comparative Example 1-2.
  • the polishing method of Comparative Example 1-1 which is a free abrasive polishing method, it is presumed that free abrasive particles roughen the polished surface of the workpiece W, resulting in a worse surface roughness Sa.
  • Test 2 As in Test 1, the polishing pads of Example 1-1 and Comparative Example 1-2 were dressed for 2 minutes to shape the polishing surfaces 14 and 94, and then polishing tests were conducted under the following conditions to examine the relationship between the polishing time (minutes) and the polishing rate ( ⁇ m/minute).
  • the polishing test using the polishing pad of Example 1-1 was the polishing method of Example 1-1
  • the polishing test using the polishing pad of Comparative Example 1-2 was the polishing method of Comparative Example 1-2.
  • the results are shown in FIG. 6 and Table 5.
  • Example 1-1 As is clear from Figure 6 and Table 5, with the polishing method of Example 1-1, the time during which the workpiece W can be polished at a certain polishing rate is much longer than with the polishing method of Comparative Example 1-2. In other words, the polishing pad of Example 1-1 has a long life and does not require frequent dressing, and therefore demonstrates excellent workability.
  • Example 1-1 the cause of these effects is presumed to be as follows. That is, as shown in Figures 1 and 7, while the workpiece W is polished by pressing the workpiece W against the polishing surface 14 of the polishing pad with a predetermined load and moving relative to the workpiece W, abrasive particles 12 are replenished from the base material 10 or pores 10a into the large holes 10b opening to the polishing surface 14. During this time, the abrasive particles 12 remaining in the large holes 10b opening to the polishing surface 14 move to the polishing surface 14 on the flow of the polishing liquid generated by the workpiece W.
  • the abrasive particles 12 consist of non-active abrasive particles 12a that remain in the base material 10 or pores 10a, standby abrasive particles 12b that are replenished from the base material 10 or pores 10a into the large holes 10b and remain in the large holes 10b, and active abrasive particles 12c that move from the large holes 10b to the polishing surface 14.
  • the active abrasive particles 12c present on the polishing surface 14 are sequentially replenished by the standby abrasive particles 12b and increase in number, resulting in a higher polishing capacity compared to conventional polishing pads.
  • Fig. 8 shows an image obtained by differentiating (Sobel processing) a white light interference microscope photograph of the polished surface of the workpiece W after polishing and cleaning by the polishing method of Example 1-1.
  • Fig. 9 shows an image obtained by differentiating (Sobel processing) a white light interference microscope photograph of the polished surface of the workpiece W after polishing and cleaning by the polishing method of Comparative Example 1-1, which is a free abrasive polishing method.
  • Both the semi-fixed polishing method of Example 1-1 and the free abrasive polishing method of Comparative Example 1-1 use CMP polishing with ceria particles, so abrasive particles inevitably remain on the workpiece W.
  • Figures 8 and 9 show that the workpiece W polished with the semi-fixed polishing method of Example 1-1 is less likely to leave behind abrasive grain residue than the workpiece W polished with the free abrasive polishing method of Comparative Example 1-1.
  • polishing the workpiece W using the polishing method of Example 1-1 has advantageous effects such as simplifying the management of the polishing liquid after polishing and simplifying the cleaning process of the workpiece W after polishing, compared to polishing the workpiece W using the free abrasive polishing method of Comparative Example 1-1.
  • Test 4 The polishing pad of Example 1-1 after polishing in Test 1 was ultrasonically cleaned to remove abrasive particles from the polishing surface 14. A SEM photograph of the polishing surface at a magnification of 100 times is shown in FIG.
  • Test 5 A polishing test was performed under the same conditions as in Test 1, with the polishing pressure set at 40 (kPa), the average particle diameter of the ceria particles, which are the abrasive particles (specific particles), being changed. Then, the relationship between the average particle diameter ( ⁇ m) of the abrasive particles and the polishing rate ( ⁇ m/min), and the relationship between the average particle diameter ( ⁇ m) of the abrasive particles and the surface condition of the workpiece W after processing were investigated.
  • the polishing test using the polishing pad of Example 1-1 was the polishing method of Example 1-1
  • the polishing test using the free abrasive polishing method using the hard polyurethane pad of Comparative Example 1-1 was the polishing method of Comparative Example 1-1
  • the polishing test using the polishing pad of Comparative Example 1-2 was the polishing method of Comparative Example 1-2.
  • the results are shown in FIG. 12, FIG. 13, Tables 6 and 7.
  • the polishing rate is highest when abrasive particles with an average particle size of 0.75 ⁇ m are used. This is presumably because when abrasive particles with an average particle size of 0.75 ⁇ m are used, the abrasive particles 12 are more likely to produce a micropumping effect due to the fine pores 10a and large pores 10b of Example 1-1.
  • the polishing method of Example 1-1 achieves a surface roughness Sa that is almost the same as that of the polishing method of Comparative Example 1-1, which is a free abrasive polishing method, regardless of whether abrasive particles with an average particle size of 0.26 ⁇ m, 0.75 ⁇ m, or 1.71 ⁇ m are used.
  • the polishing method of Comparative Example 1-2 achieves a worse surface roughness Sa when abrasive particles with an average particle size of 0.75 ⁇ m or 1.71 ⁇ m are used.
  • the results of Tests 4 and 5 show that in the polishing method of Example 1-1, the polishing rate is high in the range of average particle sizes of 0.26 to 1.71 ⁇ m, with the average particle size of the abrasive particles being centered around 0.75 ⁇ m, and the surface roughness is fine, regardless of the average particle size of the abrasive particles, as with the free abrasive polishing method of Comparative Example 1-1. From this, it is thought that if the average particle size is smaller than 0.26 ⁇ m, the abrasive particles will get into the pores 10a on the polishing surface of the polishing pad and will not exhibit a chemical mechanical polishing effect. Also, if the average particle size of the abrasive particles is larger than 1.71 ⁇ m, it is thought that the abrasive particles will get caught in the pores 10a and will not be able to reach the large holes 10b.
  • the inner diameter of the part of the fine holes 10a that communicates with the large holes 10b is 7 to 25 ⁇ m.
  • the reason why the minimum value of the inner diameter of the communicating part is set to 7 ⁇ m is as follows.
  • the part where the pore communicates with the large pore is called the communicating port.
  • This communicating port is not circular, but is considered to have a minimum and a maximum value. If the minimum value is 7 ⁇ m, even if abrasive particles 12 with a diameter of 1.71 ⁇ m are attached to the circumference of the communicating port, the maximum value can be 3.58 ⁇ m, which is the inner diameter of the communicating port (7 ⁇ m) minus twice the diameter of the abrasive particles 12 (3.42 ⁇ m).
  • the abrasive particles 12 have a diameter of 3.42 ⁇ m, which means that they can pass through the communicating port with a margin of about 5% compared to the maximum value of the communicating port of 3.58 ⁇ m. Thus, if the minimum value of the inner diameter of the communicating port is 7 ⁇ m, a certain amount of abrasive particles 12 can be expected to pass through.
  • the maximum value of the inner diameter of the communication port is set to 25 ⁇ m is as follows.
  • the large hole 10b can be approximated as a mid-sphere inscribed in the side of a regular icosahedron, and the communication port can be regarded as each face of the regular icosahedron. Since each face of a regular icosahedron is an equilateral triangle, the communication port can be regarded as the inscribed circle of the equilateral triangle.
  • the length of the longest point of the inner diameter of the large hole 10b is 70 ⁇ m
  • the length of the part with the longest inner diameter in the large holes 10b is 70 to 500 ⁇ m so that the abrasive particles 12 remaining in the large holes 10b can ride the flow of the abrasive liquid accompanying the movement of the workpiece W on the polishing surface 14 of the polishing pad and move to the polishing surface 14.
  • polishing pads are dressed before use, and the unevenness of the polishing surface 14 at that time may be reduced to about 35 ⁇ m.
  • the inner diameter of the large holes 10b must be 70 ⁇ m (depth 35 ⁇ m) or more to have little waiting effect for the abrasive particles.
  • the spherical large holes 10b emerge on the polishing surface 14 and become hemispherical, if the inner diameter of the large holes 10b is greater than 500 ⁇ m (depth is 250 ⁇ m), the flow of polishing liquid accompanying the movement of the workpiece W on the polishing surface 14 of the polishing pad does not reach near the bottom of the large holes 10b, and the waiting abrasive particles 12b cannot move to the polishing surface 14.
  • Test 6 As in Test 1, the ratio of the base material to the pores was changed, and polishing pads of test pieces 1 to 4 were manufactured. The ratio of abrasive particles in each polishing pad was 19.5 volume % as in Example 1-1, and the ratio of large pores 10b was 28.4 volume % as in Example 1-1. Using each polishing pad of test pieces 1 to 4, a polishing test was performed under the same conditions as Test 1, with the polishing pressure set to 60 (kPa). Then, the relationship between the ratio (volume ratio) of the base material to the pores and the polishing rate ( ⁇ m/min), and the relationship between the ratio (volume ratio) of the base material to the pores and the durometer hardness (D scale) were investigated. The results are shown in Figures 14, 15, and Table 8.
  • test pieces 1 and 2 achieved excellent polishing rates. This shows that it is preferable that the ratio of base material 10 to pores 10a and large pores 10b is 0.205 volume ratio or less, and that the durometer hardness (D scale) is 39.7 or less.
  • Example 7 The polishing pad of Example 2-1 was produced in the same manner as the polishing pad of Example 1-1, using silica particles (average particle size: 0.25 ⁇ m) as the abrasive particles and the specific particles.
  • the workpiece W was a lithium tantalate (LT) wafer ( ⁇ 100 mm ⁇ thickness 2 mm), the polishing pressure was set to 60 (kPa), and the polishing surface 14 of the polishing pad of Example 2-1 was dressed for 2 minutes in the same manner as in Test 1, and then a polishing test was performed under the same conditions as in Test 1.
  • the polishing test using the polishing pad of Example 2-1 was used as the polishing method of Example 2-1.
  • a polishing test was also conducted under the above conditions using a free abrasive polishing method that used a polishing solution containing 12.5 mass% colloidal silica while using a nonwoven fabric pad that did not contain abrasive particles.
  • This free abrasive polishing test was designated as the polishing method of Comparative Example 2-1.
  • the polishing rate ( ⁇ m/min) and the surface condition of the workpiece W after processing were then investigated. The results are shown in Figures 16 and 17.
  • the workpiece W was a silicon wafer ( ⁇ 100 mm ⁇ thickness 0.4 mm), the polishing liquid was 0.1 mol/L KOH (10 ml/min), the polishing pressure was 10 (kPa), and, as in Test 1, a polishing test was performed under the same conditions as Test 1, 2 minutes after the polishing surfaces 14, 94 were formed on the polishing pads of Example 2-1 and Comparative Example 2-2.
  • the polishing test using the polishing pad of Example 2-1 was performed as the polishing method of Example 2-1
  • the polishing test using the polishing pad of Comparative Example 2-2 was performed as the polishing method of Comparative Example 2-2.
  • a polishing test was also conducted under the above conditions using a free abrasive polishing method that used a polishing solution containing 12.5 mass% colloidal silica and 0.1 mol/L KOH while using a nonwoven fabric pad that did not contain abrasive particles.
  • This free abrasive polishing test was designated as the polishing method of Comparative Example 2-1.
  • the polishing rate ( ⁇ m/min) and the surface condition of the workpiece W after processing were then investigated. The results are shown in Figures 18 and 19.
  • Example 3-1 and Comparative Example 3-2 Polishing pads of Example 3-1 and Comparative Example 3-2 were manufactured in the same manner as in Test 1, using ceria particles (average particle size: 0.75 ⁇ m) as the abrasive particles and specific particles, and PVDF (polyvinylidene fluoride) as the base resin.
  • ceria particles average particle size: 0.75 ⁇ m
  • PVDF polyvinylidene fluoride
  • the volume percentages of the resin, abrasive particles, pores 10a, and large pores 10b in the polishing pad of Example 3-1 are as shown in Table 9.
  • the durometer hardness (D scale) of the polishing pad of Example 3-1 is also shown in Table 9.
  • the volume percentages of the resin, abrasive particles, and pores 90 in the polishing pad of Comparative Example 3-2 are also as shown in Table 9.
  • the durometer hardness (D scale) of the polishing pad of Comparative Example 3-2 is also shown in Table 9.
  • the workpiece W was quartz ( ⁇ 100 mm ⁇ thickness 1 mm) (1 sheet), the polishing liquid was tap water, the polishing pressure was 20 (kPa), and, as in Test 1, a polishing test was performed 2 minutes after the polishing surfaces 14, 94 were formed on the polishing pads of Example 3-1 and Comparative Example 3-2 under the same conditions as in Test 1.
  • the polishing test using the polishing pad of Example 3-1 was performed as the polishing method of Example 3-1
  • the polishing test using the polishing pad of Comparative Example 3-2 was performed as the polishing method of Comparative Example 3-2.
  • a polishing test was also conducted under the above conditions using a free abrasive polishing method that used a hard polyurethane pad that did not contain abrasive particles and a polishing solution that contained 5% by mass of ceria.
  • This free abrasive polishing test was designated as the polishing method of Comparative Example 3-1. The results are shown in Figures 20 and 21, and Tables 10 and 11.
  • the polishing pads of Examples 1-1, 2-1, and 3-1 can simplify the management of the polishing liquid after polishing, and can demonstrate superior polishing ability while maintaining the advantageous effects of the polishing pad, such as simplifying the cleaning process of the polished object W after polishing. It can also be seen that the above manufacturing method can manufacture the polishing pads of Examples 1-1, 2-1, and 3-1.
  • the present invention can be used in a method for polishing solids that are amorphous, crystalline, or amorphous-crystalline composite materials.
  • Base material 10a Pore 14: Polishing surface 12: Abrasive particles, specific particles (12a: Unactivated abrasive particles, 12b: Standby abrasive particles, 12c: Active abrasive particles) W: Workpiece to be polished 10b...Large hole

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4818199B1 (enrdf_load_stackoverflow) * 1967-05-12 1973-06-04
JP2006518940A (ja) * 2003-02-24 2006-08-17 ダウ グローバル テクノロジーズ インコーポレイティド 化学機械的平坦化のための材料及び方法
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
JP2009214246A (ja) * 2008-03-11 2009-09-24 Noritake Co Ltd シート状研磨体の製造方法
JP2011049256A (ja) * 2009-08-25 2011-03-10 Noritake Co Ltd 研磨体およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4818199B1 (enrdf_load_stackoverflow) * 1967-05-12 1973-06-04
JP2006518940A (ja) * 2003-02-24 2006-08-17 ダウ グローバル テクノロジーズ インコーポレイティド 化学機械的平坦化のための材料及び方法
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
JP2009214246A (ja) * 2008-03-11 2009-09-24 Noritake Co Ltd シート状研磨体の製造方法
JP2011049256A (ja) * 2009-08-25 2011-03-10 Noritake Co Ltd 研磨体およびその製造方法

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