Classifications

• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
  • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

• the present invention relates to a display device.
• the organic EL display panel constituting the organic EL display device includes, for example, a resin substrate layer, a TFT layer provided on the resin substrate layer and having thin film transistors (TFTs) arranged thereon, an organic EL element layer provided on the TFT layer and having organic EL elements arranged thereon, and a sealing film provided on the organic EL element layer.
• TFTs thin film transistors
• an organic EL display device including this organic EL display panel, a structure has been proposed in which an island-shaped non-display area is provided inside the display area where images are displayed, and through-holes are provided in the non-display area that penetrate in the thickness direction in order to place electronic components such as a camera or fingerprint sensor.
• Patent Document 1 discloses a display device in which a first functional layer and/or a second functional layer are interrupted (or separated) by an undercut structure or an overhanging structure arranged in the intermediate region around the through hole.
• a self-luminous element such as an organic EL element includes, for example, a first electrode provided on a TFT layer, a light-emitting functional layer provided on the first electrode, and a second electrode provided on the light-emitting functional layer.
• the light-emitting functional layer includes individual light-emitting functional layers provided in a plurality of locations corresponding to the plurality of sub-pixels constituting the display area, and a common light-emitting functional layer provided in common to the plurality of sub-pixels.
• the second electrode is provided in common to the plurality of sub-pixels, similar to the common light-emitting functional layer.
• a self-luminous display device having a self-luminous element with a through-hole provided inside the display area as described above, moisture or the like may penetrate through the common light-emitting functional layer or the second electrode exposed from the through-hole, causing deterioration of the common light-emitting functional layer and the individual light-emitting functional layers in contact therewith, so it is necessary to form the common light-emitting functional layer and the second electrode separately on the display area side and the through-hole side around the through-hole. Therefore, in a self-luminous display device, it has been proposed to pattern the inorganic insulating film constituting the TFT layer and form an annular slit in the resin substrate layer around the through hole using the patterned inorganic insulating film.
• the common light-emitting functional layer and the second electrode can be formed separately on the display area side and the through hole side.
• the distance between the through hole and the panel edge tends to become closer.
• the resin substrate layer is exposed at the end face of the through hole and the end face of the panel edge located at close distances, and moisture penetrates into the resin substrate layer from both the end face of the through hole and the end face of the panel edge, which makes the light-emitting functional layer easily deteriorate on the panel edge side of the through hole, so there is room for improvement.
• the present invention was made in consideration of these points, and its purpose is to suppress deterioration of the light-emitting functional layer on the panel edge side of the through hole.
• the display device has a display panel including a resin substrate layer, a thin film transistor layer including an inorganic insulating film provided on the resin substrate layer, a light emitting element layer provided on the thin film transistor layer, in which a plurality of first electrodes, a light emitting functional layer, and a second electrode are stacked in order corresponding to a plurality of subpixels constituting a display area, and a first inorganic sealing film provided on the light emitting element layer, and a non-display area is provided in an island shape inside the display area along the panel edge of the display panel, and a through hole penetrating the display panel in the thickness direction is provided in the non-display area, and in the non-display area, a plurality of slits are provided in the thin film transistor layer side of the resin substrate layer and the inorganic insulating film in a ring shape so as to surround the through hole, and an inorganic insulating layer formed by separating the inorganic
• the present invention can suppress deterioration of the light-emitting functional layer on the panel edge side of the through hole.
• FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention.
• FIG. 2 is a plan view of a display area of an organic EL display panel constituting the organic EL display device according to the first embodiment of the present invention.
• 3 is a cross-sectional view of the display area of the organic EL display panel taken along line III-III in FIG.
• FIG. 4 is an equivalent circuit diagram of a TFT layer constituting the organic EL display panel according to the first embodiment of the present invention.
• FIG. 5 is a cross-sectional view of an organic EL layer that constitutes the organic EL display panel according to the first embodiment of the present invention.
• FIG. 6 is a plan view of the non-display area and its periphery of the organic EL display panel according to the first embodiment of the present invention.
• FIG. 7 is a plan view of the non-display area and its periphery in a modified example of the organic EL display panel according to the first embodiment of the present invention, and corresponds to FIG.
• FIG. 8 is a cross-sectional view of the non-display region of the organic EL display panel taken along line VIII-VIII in FIG. 9 is a cross-sectional view of the non-display area of the organic EL display panel taken along line IX-IX in FIG.
• FIG. 10 is a cross-sectional view of the organic EL display panel taken along line XX in FIG.
• FIG. 1 is a plan view showing a schematic configuration of an organic EL display device 70 of this embodiment.
• FIG. 2 is a plan view of a display area D of an organic EL display panel 50a constituting the organic EL display device 70.
• FIG. 3 is a cross-sectional view of the display area D of the organic EL display panel 50a taken along line III-III in FIG. 1.
• FIG. 4 is an equivalent circuit diagram of a TFT layer 30 constituting the organic EL display panel 50a.
• FIG. 1 is a plan view showing a schematic configuration of an organic EL display device 70 of this embodiment.
• FIG. 2 is a plan view of a display area D of an organic EL display panel 50a constituting the organic EL display device 70.
• FIG. 3 is a cross-sectional view of the display area D of the organic EL display panel 50a taken along line III-III in FIG. 1.
• FIG. 4 is an equivalent circuit diagram of a TFT layer 30 constituting the organic EL display panel 50a.
• FIG. 5 is a cross-sectional view of an organic EL layer 33 constituting the organic EL display panel 50a.
• FIG. 6 is a plan view of a non-display area N of the organic EL display panel 50a and its periphery.
• FIG. 7 is a plan view of a non-display area N of an organic EL display panel 50b as a modified example of the organic EL display panel 50a and its periphery, which corresponds to FIG. 6.
• 8 and 9 are cross-sectional views of the non-display region N of the organic EL display panel 50a taken along lines VIII-VIII and IX-IX in Fig. 6.
• Fig. 10 is a cross-sectional view of the organic EL display panel 50a taken along line XX in Fig. 1.
• the organic EL display device 70 includes an organic EL display panel 50a having a through-hole H in the non-display area N, and an image sensor 60 installed as an electronic component on the back side of the through-hole H of the organic EL display panel 50a, as described below.
• the organic EL display panel 50a includes, for example, a rectangular display area D for displaying images, and a frame area F arranged in a frame shape around the display area D.
• a rectangular display area D is illustrated, but this rectangular shape also includes, for example, an approximately rectangular shape with arc-shaped sides, arc-shaped corners, or a shape with a notch in one side.
• a plurality of sub-pixels P are arranged in a matrix.
• a sub-pixel P having a red light-emitting region Lr for displaying red a sub-pixel P having a green light-emitting region Lg for displaying green
• a sub-pixel P having a blue light-emitting region Lb for displaying blue are arranged adjacent to each other.
• one pixel is composed of three adjacent sub-pixels P having a red light-emitting region Lr, a green light-emitting region Lg, and a blue light-emitting region Lb.
• a non-display area N is provided in an island shape along the panel edge E of the organic EL display panel 50a as shown in FIG.
• a through hole H is provided in a circular shape in a plan view that penetrates the organic EL display panel 50a in the thickness direction in order to install the image sensor 60 on the back side as shown in FIG. 1.
• a terminal portion T is provided so as to extend in one direction (X direction in the figure).
• a bending portion B that can be bent, for example, 180° (in a U-shape) is provided so as to extend in one direction (X direction in the figure) with the X direction in the figure as the bending axis.
• a trench G that is approximately C-shaped in plan view is provided in the first planarization film 19a and the second planarization film 21a described later, as shown in FIG. 1 and FIG. 10, so as to penetrate the first planarization film 19a and the second planarization film 21a.
• the trench G is provided so as to be approximately C-shaped in plan view so as to open on the terminal portion T side, as shown in FIG. 1.
• the organic EL display panel 50a includes a resin substrate layer 10, a TFT layer 30 provided on the resin substrate layer 10, an organic EL element layer 40 provided as a light emitting element layer on the TFT layer 30, and a sealing film 45 provided on the organic EL element layer 40.
• the resin substrate layer 10 includes a first resin substrate layer 6 provided on the side opposite the TFT layer 30, a second resin substrate layer 8 provided on the TFT layer 30 side, and an intra-substrate inorganic insulating film 7 provided between the first resin substrate layer 6 and the second resin substrate layer 8.
• the first resin substrate layer 6 and the second resin substrate layer 8 are made of, for example, polyimide resin.
• the intra-substrate inorganic insulating film 7, the base coat film 11 described below, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are made of, for example, a single layer or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, silicon oxynitride, etc.
• the TFT layer 30 comprises a base coat film 11 provided on a resin substrate layer 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b (see Figure 4), a plurality of third TFTs 9c and a plurality of capacitors 9d provided on the base coat film 11, and a first planarization film 19a and a second planarization film 21a provided in sequence on each of the first TFTs 9a, each of the second TFTs 9b, each of the third TFTs 9c and each of the capacitors 9d.
• the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are provided as inorganic insulating films that constitute the TFT layer 30, as described above.
• a plurality of gate lines 14g are provided so as to extend parallel to each other in the X direction in the figure.
• a plurality of light emission control lines 14e are provided so as to extend parallel to each other in the X direction in the figure. Note that, as shown in FIG. 2, each light emission control line 14e is provided so as to be adjacent to each gate line 14g.
• a plurality of source lines 18f are provided so as to extend parallel to each other in the Y direction in the figure.
• the TFT layer 30 as shown in FIG. 1 and FIG.
• a power supply line 20a is provided in a lattice shape between the first planarization film 19a and the second planarization film 21a.
• a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d are provided in each subpixel P.
• the first TFT 9a is electrically connected to the corresponding gate line 14g, source line 18f, and second TFT 9b in each subpixel P.
• the first TFT 9a includes a semiconductor layer 12a provided on the base coat film 11, a gate electrode 14a provided on the semiconductor layer 12a via a gate insulating film 13, and a source electrode 18a and a drain electrode 18b provided on the second interlayer insulating film 17 so as to be spaced apart from each other.
• the semiconductor layer 12a is formed of a semiconductor film made of polysilicon such as LTPS (low temperature polysilicon), and includes a source region and a drain region that are spaced apart from each other, and a channel region that is defined between the source region and the drain region.
• LTPS low temperature polysilicon
• the semiconductor layer 12a formed of a semiconductor film made of polysilicon is exemplified in this embodiment, the semiconductor layer 12a and the semiconductor layer 12b described later may be formed of a semiconductor film made of an oxide semiconductor such as an In-Ga-Zn-O system.
• the gate electrode 14a is provided so as to overlap the channel region of the semiconductor layer 12a, and is configured to control the conduction between the source region and the drain region of the semiconductor layer 12a.
• the gate electrode 14a is formed of the first metal film, similar to the gate line 14g, etc.
• the source electrode 18a and the drain electrode 18b are electrically connected to the source region and the drain region of the semiconductor layer 12a, respectively, through contact holes formed in the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
• the source electrode 18a and the drain electrode 18b are formed from the third metal film, similar to the source line 18f, etc.
• the second TFT 9b is electrically connected to the corresponding first TFT 9a, power supply line 20a, and third TFT 9c in each subpixel P.
• the second TFT 9b has substantially the same structure as the first TFT 9a and the third TFT 9c described later.
• the third TFT 9c is electrically connected to the corresponding second TFT 9b, the first electrode 31a of the organic EL element 35 described later, and the light emission control line 14e in each subpixel P.
• the third TFT 9c also includes a semiconductor layer 12b provided on the base coat film 11, a gate electrode 14b provided on the semiconductor layer 12b via a gate insulating film 13, and a source electrode 18c and a drain electrode 18d provided on the second interlayer insulating film 17 so as to be spaced apart from each other.
• semiconductor layer 12b is formed of a semiconductor film made of polysilicon such as LTPS, and has source and drain regions that are spaced apart from each other, and a channel region that is defined between the source and drain regions.
• the gate electrode 14b is provided so as to overlap the channel region of the semiconductor layer 12b, and is configured to control the conduction between the source region and the drain region of the semiconductor layer 12b.
• the gate electrode 14b is formed from the first metal film, similar to the gate line 14g, etc.
• the source electrode 18c and the drain electrode 18d are electrically connected to the source region and the drain region of the semiconductor layer 12b, respectively, through contact holes formed in the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
• the source electrode 18c and the drain electrode 18d are formed from the third metal film, similar to the source line 18f, etc.
• first TFT 9a, the second TFT 9b, and the third TFT 9c are illustrated as top-gate types, but the first TFT 9a, the second TFT 9b, and the third TFT 9c may be bottom-gate types.
• the capacitor 9d is electrically connected to the corresponding first TFT 9a and power supply line 20a in each subpixel P.
• the capacitor 9d includes a lower conductive layer 14c formed of the first metal film, a first interlayer insulating film 15 formed to cover the lower conductive layer 14c, and an upper conductive layer 16c formed of the second metal film on the first interlayer insulating film 15 to overlap the lower conductive layer 14c.
• the upper conductive layer 16c is electrically connected to the power supply line 20a via a contact hole (not shown) formed in the second interlayer insulating film 17 and the first planarization film 19a.
• the first planarization film 19a and the second planarization film 21a have flat surfaces in the display region D, and are made of, for example, organic resin materials such as polyimide resin and acrylic resin, or polysiloxane-based SOG (spin on glass) materials.
• a relay electrode 20b is provided between the first planarization film 19a and the second planarization film 21a, made of the fourth metal film described above.
• the organic EL element layer 40 includes a plurality of first electrodes 31a, edge covers 32a, organic EL layers 33, and second electrodes 34 that are stacked in sequence on the TFT layer 30 to correspond to a plurality of subpixels P.
• the first electrodes 31a, organic EL layers 33, and second electrodes 34 form an organic EL element 35 (see FIG. 4).
• the first electrodes 31a are provided in a matrix on the second planarization film 21a so as to correspond to the sub-pixels P.
• the first electrodes 31a are electrically connected to the drain electrodes 18d of the third TFTs 9c through contact holes formed in the first planarization film 19a, relay electrodes 20b, and contact holes formed in the second planarization film 21a, as shown in FIG. 3.
• the first electrodes 31a have a function of injecting holes (positive holes) into the organic EL layer 33.
• the first electrodes 31a are formed of a material having a large work function.
• examples of materials constituting the first electrode 31a include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn).
• the material constituting the first electrode 31a may be, for example, an alloy such as astatine (At)/astatine oxide (AtO 2 ).
• the material constituting the first electrode 31a may be, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO).
• the first electrode 31a may be formed by stacking a plurality of layers made of the above materials. Examples of compound materials having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
• the edge cover 32a is arranged in a lattice shape so as to cover the peripheral end of each first electrode 31a.
• the edge cover 32a is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG material.
• the organic EL layer 33 is disposed on each first electrode 31a and includes individual light-emitting functional layers arranged in a matrix to correspond to the plurality of sub-pixels P, and a common light-emitting functional layer provided to be common to the plurality of sub-pixels P.
• the organic EL layer 33 includes a hole injection layer 1, a hole transport layer 2, an organic light-emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are arranged in order on the first electrode 31a.
• an organic EL layer 33 is illustrated in which the organic light-emitting layer 3 is provided as an individual light-emitting functional layer, and the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 are provided as common light-emitting functional layers.
• color conversion may be performed using a QLED (Quantum-dot light emitting diode) or the like, and the organic light-emitting layer 3 may be used as a common light-emitting functional layer, or at least one of the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 may be used as an individual light-emitting functional layer.
• QLED Quantum-dot light emitting diode
• the hole injection layer 1 also called an anode buffer layer, has the function of bringing the energy levels of the first electrode 31a and the organic EL layer 33 closer to each other and improving the efficiency of hole injection from the first electrode 31a to the organic EL layer 33, and is provided as a common light-emitting functional layer common to a plurality of sub-pixels P.
• materials constituting the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
• the hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 31a to the organic EL layer 33, and is provided as a common light-emitting functional layer common to a plurality of sub-pixels P.
• materials constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon,
• the organic light-emitting layer 3 is a region where holes and electrons are injected from the first electrode 31a and the second electrode 34, respectively, and where the holes and electrons recombine when a voltage is applied by the first electrode 31a and the second electrode 34, and is provided as an individual light-emitting functional layer corresponding to a plurality of sub-pixels P.
• the organic light-emitting layer 3 is formed from a material with high luminous efficiency.
• Examples of materials constituting the organic light-emitting layer 3 include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, tristyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, polysilane, and the like.
• the electron transport layer 4 has a function of efficiently transferring electrons to the organic light-emitting layer 3, and is provided as a common light-emitting functional layer common to a plurality of sub-pixels P.
• materials constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxinoid compounds.
• the electron injection layer 5 has a function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer to each other and improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33, and this function makes it possible to reduce the driving voltage of the organic EL element 35.
• the electron injection layer 5 is also called a cathode buffer layer, and is provided as a common light-emitting functional layer common to the plurality of sub-pixels P.
• examples of materials constituting the electron injection layer 5 include inorganic alkali compounds such as lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), and barium fluoride (BaF 2 ), aluminum oxide (Al 2 O 3 ), and strontium oxide (SrO).
• inorganic alkali compounds such as lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), and barium fluoride (BaF 2 ), aluminum oxide (Al 2 O 3 ), and strontium oxide (SrO).
• the second electrode 34 is provided on the organic EL layers 33 so as to be common to the sub-pixels P, that is, so as to cover each organic EL layer 33 and the edge cover 32a, as shown in FIG. 3.
• the second electrode 34 has a function of injecting electrons into the organic EL layer 33.
• the second electrode 34 is preferably made of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 33.
• examples of materials constituting the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF).
• the second electrode 34 may be formed of an alloy such as magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), astatine (At)/astatine oxide (AtO 2 ), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), or lithium fluoride (LiF)/calcium (Ca)/aluminum (Al).
• the second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO).
• the second electrode 34 may be formed by stacking a plurality of layers made of the above materials.
• materials with a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al).
• the sealing film 45 is provided so as to cover the second electrode 34, and includes a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43 laminated in order on the second electrode 34, and has a function of protecting the organic EL layer 33 of the organic EL element 35 from moisture and oxygen.
• the first inorganic sealing film 41 and the second inorganic sealing film 43 are composed of inorganic insulating films such as a silicon nitride film, a silicon oxide film, and a silicon oxynitride film.
• the organic sealing film 42 is composed of an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, and a polyamide resin.
• a sealing film 45 having a three-layer structure in which the first inorganic sealing film 41, the organic sealing film 42, and the second inorganic sealing film 43 are laminated in order is exemplified, but the sealing film 45 may be, for example, a single-layer structure of only the first inorganic sealing film 41, or a two-layer structure in which the first inorganic sealing film 41 and the organic sealing film 42 are laminated in order.
• an organic sealing film 42 and a second inorganic sealing film 43 are provided on a first inorganic sealing film 41, and the second inorganic sealing film 43 is provided so as to cover the organic sealing film 42 on the first inorganic sealing film 41.
• a first slit Sa, a second slit Sb and a third slit Sc are provided in a ring shape as a plurality of slits so as to surround the through hole H in the non-display region N.
• the first slit Sa, the second slit Sb and the third slit Sc are provided on the TFT layer 30 side of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 constituting the TFT layer 30, and the second resin substrate layer 8.
• the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are formed in the non-display region N, separated by the first slit Sa, the second slit Sb, the third slit Sc and an outer slit St described later, to form the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a and the fourth inorganic insulating layer 17a.
• the TFT layer 30 side of the second resin substrate layer 8 is formed in the non-display region N by being separated by the first slit Sa, the second slit Sb, the third slit Sc, and the outer slit St described later, to form a resin layer 8a.
• the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are provided so as to protrude in an eaves-like manner toward the display region D side (left side in FIG. 8) and the through hole H side (right side in FIG. 8) from the resin layer 8a, as shown in FIG. 8 and FIG. 9, and have an inverse tapered structure R.
• the organic EL layer 33 and the second electrode 34 are laminated in order on the upper surface of the fourth inorganic insulating layer 17a and the bottom surfaces of the first slit Sa, the second slit Sb, the third slit Sc, and the outer slit St, separated from those in the display region D, as shown in FIG. 8 and FIG. 9.
• the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are exemplified as protruding from the resin portion 8a toward both the through-hole H side and the display area D side in an eave-like manner, but the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a may also protrude from the resin portion 8a toward either the through-hole H side or the display area D side in an eave-like manner.
• the first slit Sa is provided on the panel edge E side of the organic EL display panel 50a so as to be divided into a first slit inner periphery Saa and a first slit outer periphery Sab.
• the panel edge E side of the first slit Sa i.e., the first slit inner periphery Saa and the first slit outer periphery Sab, and the side opposite to the panel edge E side, are each provided in an arc shape as shown in FIG. 6.
• the second slit Sb is provided on the panel edge E side of the organic EL display panel 50a so as to be divided into a second slit inner periphery Sba and a second slit outer periphery Sbb.
• the panel edge E side of the second slit Sb i.e., the second slit inner periphery Sba and the second slit outer periphery Sbb, and the side opposite to the panel edge E side, are each provided in an arc shape as shown in FIG. 6.
• the third slit Sc is provided on the panel edge E side of the organic EL display panel 50a so as to be divided into a third slit inner periphery Sca and a third slit outer periphery Scb.
• the panel edge E side of the third slit Sc i.e., the third slit inner periphery Sca and the third slit outer periphery Scb, and the side opposite to the panel edge E side, are each provided in an arc shape as shown in FIG. 6.
• an organic EL display panel 50a is illustrated in which the first slit Sa, the second slit Sb, and the third slit Sc are arranged in a partially arc-shaped manner in the non-display area N.
• the first slit Sa, the second slit Sb, and the third slit Sc may be arranged in a partially U-shaped manner in the non-display area N.
• a first slit Sa, a second slit Sb, and a third slit Sc are provided in a ring shape in the non-display area N so as to surround the through-hole H.
• the first slit Sa is provided in a rectangular shape as shown in FIG. 7.
• the second slit Sb is provided on the panel edge E side of the organic EL display panel 50b so as to be divided into a second slit inner periphery Sba and a second slit outer periphery Sbb as shown in FIG.
• the panel edge E side of the second slit Sb i.e., the second slit inner periphery Sba and the second slit outer periphery Sbb, and the side opposite to the panel edge E side are each provided in a U-shape as shown in FIG. 7.
• the third slit Sc is arranged on the panel edge E side of the organic EL display panel 50b so as to be divided into a third slit inner peripheral portion Sca, a third slit middle peripheral portion Scb, and a third slit outer peripheral portion Scc, as shown in FIG. 7.
• the panel edge E side of the third slit Sc i.e., the third slit inner peripheral portion Sca, the third slit middle peripheral portion Scb, and the third slit outer peripheral portion Scc, as well as the side opposite to the panel edge E side, are each arranged in a U-shape as shown in FIG. 7.
• an organic EL display panel 50a is illustrated in which the first slit Sa, the second slit Sb, and the third slit Sc are each split into two on the panel edge E side, but as in the above modification, at least one of the first slit Sa, the second slit Sb, and the third slit Sc may be split into multiple parts on the panel edge E side.
• the above-mentioned sealing film 45 is formed in a state where the second inorganic sealing film 43 is laminated on the first inorganic sealing film 41 in the region where the first slit Sa, second slit Sb, and third slit Sc are arranged in the non-display region N.
• the laminated film of the first inorganic sealing film 41 and the second inorganic sealing film 43 is arranged so as to cover the first slit Sa, second slit Sb, and third slit Sc, as shown in Figures 8 and 9.
• an outer slit St is provided in a ring shape in the non-display region N so as to surround the first slit Sa, the second slit Sb, and the third slit Sc.
• the outer slit St is provided on the TFT layer 30 side of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 constituting the TFT layer 30, and the second resin substrate layer 8. Note that, as shown in FIG.
• the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are separated by the outer slit St and are provided so as to protrude into the inside of the outer slit St like an eaves. Also, as shown in FIG. 8, the inside of the outer slit St is filled with an organic sealing film 42 via a first inorganic sealing film 41.
• the organic EL display panel 50a has an inner dam wall Wc arranged in a ring shape between the first slit Sa, the second slit Sb, and the third slit Sc and the outer slit St in the non-display area N.
• the inner dam wall Wc has a resin layer 32e formed in the same layer as the edge cover 32a using the same material, and is arranged to contact the inner end of the organic sealing film 42 via the organic EL layer 33, the second electrode 34, and the first inorganic sealing film 41, and is configured to suppress the spread of ink that becomes the organic sealing film 42. Also, as shown in FIG.
• the top of the inner dam wall Wc is provided in an uneven shape, so that it is possible to improve the adhesion with the first inorganic sealing film 41 provided via the extremely thin film of the organic EL layer 33 and the second electrode 34 formed by deposition, for example.
• the inner dam wall Wc is formed in the same layer and made of the same material as the edge cover 32a, but the inner dam wall Wc may be formed in the same layer and made of the same material as the first planarization film 19a or the second planarization film 21a, or may be formed of a laminate film of these.
• the first outer damming wall Wa comprises a lower resin layer 21b formed in the same layer and made of the same material as the second planarization film 21a, and an upper resin layer 32c provided on the lower resin layer 21b via a connection wiring 31b and formed in the same layer and made of the same material as the edge cover 32a.
• the connection wiring 31b is formed in the same layer and made of the same material as the first electrode 31a.
• the first outer damming wall Wa is provided so as to overlap the peripheral edge of the organic sealing film 42, and is configured to suppress the spread of the ink that becomes the organic sealing film 42.
• the second outer damming wall Wb includes a lower resin layer 21c formed in the same layer and made of the same material as the second planarization film 21a, and an upper resin layer 32d provided on the lower resin layer 21c via a connection wiring 31b and formed in the same layer and made of the same material as the edge cover 32a.
• the organic EL display panel 50a also includes a first frame wiring 18h that is provided in a frame shape inside the trench G in the frame region F, with both ends of the open portion of the trench G extending to the terminal portion T.
• the first frame wiring 18h is electrically connected to the power line 20a in the display region D via a contact hole formed in the first planarization film 19a, and is configured so that a high power supply voltage (ELVDD) is input at the terminal portion T.
• the first frame wiring 18h is formed from the third metal film.
• the organic EL display panel 50a also includes a second frame wiring 18i that is provided in a roughly C-shape outside the trench G in the frame region F and has both ends extending to the terminal portion T.
• the second frame wiring 18i is electrically connected to the second electrode 34 in the display region D via a connection wiring 31b provided in the trench G, and is configured so that a low power supply voltage (ELVSS) is input at the terminal portion T.
• the second frame wiring 18i is formed from the third metal film.
• the organic EL display panel 50a also includes a plurality of peripheral photo spacers 32b arranged in an island shape so as to protrude upward from both edges of the trench G in the frame region F.
• the peripheral photo spacers 32b are formed in the same layer and made of the same material as the edge cover 32a.
• the imaging element 60 is, for example, a CMOS (complementary metal oxide semiconductor) camera or a CCD (charge coupled device) camera. Note that, although the imaging element 60 is exemplified as an electronic component in this embodiment, the electronic component may also be, for example, an optical sensor such as a fingerprint sensor or a face recognition sensor.
• CMOS complementary metal oxide semiconductor
• CCD charge coupled device
• a gate signal is input to the first TFT 9a via the gate line 14g, turning the first TFT 9a on, a predetermined voltage corresponding to the source signal is written to the gate electrode of the second TFT 9b and the capacitor 9d via the source line 18f, and when a light emission control signal is input to the third TFT 9c via the light emission control line 14e, the third TFT 9c turns on, and a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 20a to the organic EL layer 33, causing the organic light emitting layer 3 of the organic EL layer 33 to emit light, thereby displaying an image.
• the organic EL display device 70 even if the first TFT 9a is turned off, the gate voltage of the second TFT 9b is held by the capacitor 9d, so that light emission by the organic light emitting layer 3 is maintained in each subpixel P until the gate signal for the next frame is input.
• the organic EL display device 70 is configured to capture an image of the front side of the organic EL display panel 50a using an image sensor 60 installed on the rear side of the organic EL display panel 50a.
• the method for manufacturing the organic EL display device 70 of this embodiment includes a TFT layer forming process, an organic EL element layer forming process, a sealing film forming process, and a through-hole forming process.
• ⁇ TFT layer formation process First, for example, a non-photosensitive polyimide resin (about 6 ⁇ m thick) is applied onto a glass substrate, and then the applied film is pre-baked and post-baked to form a first resin substrate layer 6. .
• an inorganic insulating film (about 500 nm thick) such as a silicon oxide film is formed on the substrate surface on which the first resin substrate layer 6 is formed, for example, by plasma CVD (chemical vapor deposition) to form an intra-substrate inorganic insulating film 7.
• plasma CVD chemical vapor deposition
• a non-photosensitive polyimide resin (about 6 ⁇ m thick) is applied to the substrate surface on which the intra-substrate inorganic insulating film 7 is formed, and then the applied film is pre-baked and post-baked to form a second resin substrate layer 8, thereby forming a resin substrate layer 10.
• a silicon oxide film (approximately 500 nm thick) and a silicon nitride film (approximately 100 nm thick) are sequentially formed by, for example, a plasma CVD method, thereby forming a base coat film 11.
• an amorphous silicon film (about 50 nm thick) is formed by plasma CVD on the substrate surface on which the base coat film 11 has been formed, and the amorphous silicon film is crystallized by laser annealing or the like to form a semiconductor film of polysilicon film, and then the semiconductor film is patterned to form semiconductor layers 12a and 12b, etc.
• an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed by, for example, a plasma CVD method on the substrate surface on which the semiconductor layer 12a etc. are formed, forming a gate insulating film 13 so as to cover the semiconductor layer 12a etc.
• a first metal film such as a molybdenum film (about 250 nm thick) is formed, for example, by sputtering, on the substrate surface on which the gate insulating film 13 is formed, and then the first metal film is patterned to form the gate line 14g, the light emission control line 14e, the gate electrodes 14a and 14b, etc.
• impurity ions are doped into the semiconductor layers 12a and 12b, etc., using the gate electrodes 14a and 14b, etc., as a mask to form a channel region, a source region, and a drain region in the semiconductor layers 12a and 12b, etc.
• a silicon nitride film (about 100 nm thick) is formed by, for example, plasma CVD on the substrate surface where the semiconductor layers 12a and 12b etc. have been doped with impurity ions, thereby forming the first interlayer insulating film 15.
• a second metal film such as a molybdenum film (about 250 nm thick) is formed by, for example, a sputtering method on the substrate surface on which the first interlayer insulating film 15 is formed, and then the second metal film is patterned to form the upper conductive layer 16c, etc.
• a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 200 nm thick) are sequentially formed by, for example, plasma CVD on the substrate surface on which the upper conductive layer 16c and the like are formed, thereby forming a second interlayer insulating film 17.
• contact holes are formed by patterning the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
• the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 is removed, and a strip-shaped slit is formed in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
• a titanium film (approximately 50 nm thick), an aluminum film (approximately 600 nm thick), and a titanium film (approximately 50 nm thick) are sequentially formed by, for example, a sputtering method to form a third metal film, which is then patterned to form source lines 18f, etc.
• a photosensitive polyimide resin (about 2.5 ⁇ m thick) is applied to the substrate surface on which the source lines 18f etc. are formed, for example, by spin coating or slit coating, and the applied film is then pre-baked, exposed, developed and post-baked to form a first planarization film 19a etc.
• a titanium film (about 50 nm thick), an aluminum film (about 600 nm thick), and a titanium film (about 50 nm thick) etc. are sequentially formed by, for example, a sputtering method to form a fourth metal film, and then the fourth metal film is patterned to form the power supply lines 20a etc.
• a polyimide-based photosensitive resin film (approximately 2.5 ⁇ m thick) is applied to the substrate surface on which the power lines 20a etc. are formed, for example, by spin coating or slit coating, and the applied film is then pre-baked, exposed, developed and post-baked to form a second planarization film 21a etc.
• the TFT layer 30 can be formed.
• a first electrode 31a, an edge cover 32a, an organic EL layer 33 (a hole injection layer 1, a positive hole injection layer 21a, a positive hole injection layer 22a, a positive hole injection layer 23a, a positive hole injection layer 24a, a positive hole injection layer 25a, a positive hole injection layer 26a, a positive hole injection layer 27a, a positive hole injection layer 28a, a positive hole injection layer 29a, a positive hole injection layer 30b, a positive hole injection layer 31b, a positive hole injection layer 30c, a positive hole injection layer 31b, a positive hole injection layer 32b, a positive hole injection layer 33c, a positive hole injection layer 33b, a positive hole injection layer 34a, a positive hole injection layer 34b, a positive hole injection layer 35a, a positive hole injection layer
• the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is partially removed, and then the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are removed.
• the second resin substrate layer 8 exposed from the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17 is ashed to form the first slit Sa, the second slit Sb, the third slit Sc and the outer slit St. can be formed.
• the organic EL layer 33 and the second electrode 34 are formed by, for example, a vapor deposition method, the organic EL layer 33 and the second electrode 34 are aligned with the first slits Sa and the second slits Sb in the non-display area N.
• the first slit Sa, the second slit Sb, the third slit Sc, and the outer slit St are formed as organic slits.
• the manufacturing method in which the EL element layer is formed in the EL element layer forming step has been exemplified, the first slit Sa, the second slit Sb, the third slit Sc and the outer slit St may be formed in the TFT layer forming step.
• an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is deposited by plasma CVD using a mask on the substrate surface on which the organic EL element layer 40 formed in the organic EL element layer formation process is formed, thereby forming a first inorganic sealing film 41.
• an organic resin material such as an acrylic resin is deposited on the substrate surface on which the first inorganic sealing film 41 is formed, for example by an inkjet method, to form an organic sealing film 42.
• an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is deposited by plasma CVD using a mask on the substrate surface on which the organic sealing film 42 has been formed, forming a second inorganic sealing film 43, thereby forming a sealing film 45.
• a front-side protective sheet (not shown) is attached to the substrate surface on which the sealing film 45 is formed
• laser light is irradiated from the glass substrate side of the resin substrate layer 10 to peel the glass substrate from the underside of the resin substrate layer 10
• a back-side protective sheet (not shown) is attached to the underside of the resin substrate layer 10 from which the glass substrate has been peeled off.
• the organic EL display panel 50a can be formed.
• ⁇ Through hole forming process> In the non-display region N of the organic EL display panel 50a formed in the sealing film formation process, for example, a laser light is irradiated while being scanned in a circular manner to form a through hole H. Thereafter, when the organic EL display panel 50a in which the through hole H is formed is fixed, for example, inside a housing, an imaging element 60 such as a camera is installed so that the imaging element 60 is disposed on the back side of the through hole H.
• the organic EL display device 70 of this embodiment can be manufactured.
• a non-display area N is provided in an island shape within the display area D along the panel edge E of the organic EL display panel 50a, and a through hole H is provided in the non-display area N penetrating the organic EL display panel 50a in the thickness direction, and a first slit Sa, a second slit Sb, and a third slit Sc are provided in a ring shape surrounding the through hole H.
• the first slit Sa, the second slit Sb, and the third slit Sc are each provided so as to split into two on the panel edge E side, so that the penetration of moisture into the organic EL layer 33 on the panel edge E side of the through hole H is slowed down, and deterioration of the organic EL layer 33 on the panel edge E side of the through hole H can be suppressed, thereby improving the reliability of the organic EL display device 70.
• the tops of the blocking walls Wc provided between the first slit Sa, the second slit Sb, and the third slit Sc and the outer slit St are uneven, which improves the adhesion between the blocking walls Wc and the first inorganic sealing film 41. This makes it possible to suppress film rupture of the first inorganic sealing film 41, thereby further suppressing the intrusion of moisture into the organic EL layer 33 and further improving the reliability of the organic EL display device 70.
• the organic EL layer has a five-layer stacked structure including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer.
• the organic EL layer may have a three-layer stacked structure including, for example, a hole injection layer/hole transport layer, a light-emitting layer, and an electron transport layer/electron injection layer.
• an organic EL display device in which the first electrode is an anode and the second electrode is a cathode is exemplified, but the present invention can also be applied to an organic EL display device in which the layered structure of the organic EL layer is inverted and the first electrode is a cathode and the second electrode is an anode.
• an organic EL display device is exemplified in which the electrode of the TFT connected to the first electrode is the drain electrode, but the present invention can also be applied to an organic EL display device in which the electrode of the TFT connected to the first electrode is called the source electrode.
• an organic EL display device has been described as an example of a display device, but the present invention can be applied to a display device equipped with multiple light-emitting elements driven by current, for example, a display device equipped with QLEDs, which are light-emitting elements that use a quantum dot-containing layer.
• the present invention is useful for flexible display devices.

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• 2023
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