Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
  • C09J183/04—Polysiloxanes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/20—Cleaning during device manufacture
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/04—Oxygen-containing compounds
  • C08K5/05—Alcohols; Metal alcoholates
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/16—Nitrogen-containing compounds
  • C08K5/17—Amines; Quaternary ammonium compounds
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
  • C09J11/02—Non-macromolecular additives
  • C09J11/06—Non-macromolecular additives organic
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
  • C08K5/005—Stabilisers against oxidation, heat, light, ozone
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
  • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2301/00—Additional features of adhesives in the form of films or foils
  • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
  • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2301/00—Additional features of adhesives in the form of films or foils
  • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
  • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2483/00—Presence of polysiloxane
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/60—Wet etching
  • H10P50/68—Wet etching of insulating materials
  • H10P50/683—Wet etching of insulating materials of inorganic materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes

Definitions

• the present invention relates to a silicone resin-containing temporary adhesive and a method for processing circuit boards.
• Three-dimensional semiconductor packaging is becoming essential to achieve even higher density and capacity.
• Three-dimensional packaging technology is a semiconductor manufacturing technology that thins a single semiconductor chip and then stacks it in multiple layers while connecting it with through silicon vias (TSVs).
• TSVs through silicon vias
• a process is required to thin the substrate on which the semiconductor circuit is formed by grinding the non-circuit-forming surface (also called the "back surface") and to form electrodes including TSVs on the back surface.
• a back surface protective tape is applied to the side opposite to the grinding surface to prevent wafer damage during grinding.
• this tape uses an organic resin film as a support base material, and while it is flexible, it is insufficient in strength and heat resistance, making it unsuitable for the TSV formation process or the wiring layer formation process on the back surface.
• a system has been proposed that can adequately withstand the processes of back grinding and TSV and back electrode formation by bonding a semiconductor substrate to a support such as silicon or glass via an adhesive layer.
• the adhesive layer used when bonding the substrate to the support. This needs to be able to bond the substrate to the support without any gaps, be durable enough to withstand subsequent processes, and also enable the thin wafer to be easily peeled off from the support in the end.
• this adhesive layer will be referred to as a temporary adhesive layer (or temporary adhesive layer) in this specification.
• Patent Document 1 A technique for bonding and peeling a temporary adhesive layer known to date, in which a heat-fusible hydrocarbon compound is used as an adhesive, and bonding and peeling are performed in a heated and molten state.
• Patent Document 1 A technique for bonding and peeling a temporary adhesive layer known to date, in which a heat-fusible hydrocarbon compound is used as an adhesive, and bonding and peeling are performed in a heated and molten state.
• this technique is simple because it is controlled only by heating, its range of application is narrow due to its insufficient thermal stability at high temperatures exceeding 200°C.
• the present invention has been made in consideration of the above problems, and provides a silicone-based resin-containing temporary adhesive and a method for processing circuit boards that can easily bond the support and substrate, can form a substrate with a uniform thickness even on a substrate with a high step difference, has high process compatibility with TSV formation and wafer backside wiring processes, can easily peel the substrate from the support, and can effectively remove the adhesive layer without contaminating the substrate, thereby increasing the productivity of thin substrates.
• the present invention provides a silicone-based resin-containing temporary adhesive that contains a silicone-based resin and temporarily bonds a semiconductor substrate and a support, and is characterized in that when the dissolution rate of the temporary adhesive layer formed with the temporary adhesive is measured by bonding the semiconductor substrate and the support via the temporary adhesive layer formed with the temporary adhesive, heating at 260°C for 2 hours, peeling the semiconductor substrate from the support, and then dissolving the temporary adhesive layer remaining on the semiconductor substrate or the support in a dimethylpropionamide solution at 50°C containing 3% by mass of tetrabutylammonium fluoride, the silicone-based resin-containing temporary adhesive has a dissolution rate of 20 ⁇ m/min or more.
• Such silicone-based resin-containing temporary adhesives can be applied to a wide range of semiconductor film formation processes due to the flexibility and excellent heat resistance of the silicone resin, and also have excellent CVD (chemical vapor deposition) resistance.
• a temporary adhesive layer with high film thickness uniformity can be formed even on wafers with steps, and this film thickness uniformity makes it easy to produce uniform thin wafers of 50 ⁇ m or less. After the thin wafer is produced, the wafer can be easily peeled off from the support, for example at room temperature.
• a silicone-based resin-containing temporary adhesive with the above dissolution rate can be used to successfully remove the adhesive layer without contaminating the substrate, thereby increasing the productivity of thin substrates.
• the proportion of dimethylsiloxane units in the non-volatile components of the silicone-based resin-containing temporary adhesive is 20% by mass or more.
• the dissolution rate of the temporary adhesive layer formed with the temporary adhesive can be increased.
• the silicone-based resin-containing temporary adhesive of the present invention preferably contains a heat resistance improver.
• the silicone resin-containing temporary adhesive can maintain a high dissolution rate in solvents even after being subjected to high-temperature treatment.
• the silicone-based resin is a curable silicone resin
• the curable silicone resin is (A) an organopolysiloxane having two or more alkenyl groups in each molecule; (B) an organohydrogenpolysiloxane containing, in each molecule, two or more hydrogen atoms bonded to silicon atoms (Si—H groups), and (C) a platinum-based catalyst; and the molar ratio of Si--H groups in component (B) to alkenyl groups in component (A) is from 0.3 to 10.
• the adhesive be used in combination with a laser release agent when temporarily bonding the semiconductor substrate and the support.
• the present invention also provides a method for processing a circuitized board, comprising the steps of: (a) preparing a laminate including a circuit board as the semiconductor substrate and the support body, the circuit board and support body being temporarily bonded by a silicone-based resin layer using the silicone-based resin-containing temporary adhesive and a laser release layer using the laser release agent; (b) processing the back surface of the laminate; (c) separating the support from the laminate by laser irradiation from the support side; (d) removing the silicone-based resin layer and the laser release layer from the separated laminate with a cleaning solution having a temperature of 40° C. to 60° C. to take out only the circuit board;
• the present invention provides a method for processing a circuit board, comprising the steps of:
• This method of processing circuit boards uses a silicone-based resin-containing temporary adhesive that has a high dissolution rate even after being subjected to high-temperature processing, as described above, so the adhesive layer can be removed well without contaminating the board, and the productivity of thin boards can be increased.
• the present invention is applicable to a wide range of semiconductor film formation processes due to the flexibility and excellent heat resistance of silicone resin, and has excellent CVD (chemical vapor deposition) resistance. It can also form a temporary adhesive layer with high film thickness uniformity even on wafers with steps, and this film thickness uniformity makes it easy to produce uniform thin wafers of 50 ⁇ m or less. After the thin wafer is produced, the wafer can be easily peeled off from the support, for example at room temperature. Furthermore, if the temporary adhesive contains a silicone-based resin and has the above dissolution rate, the adhesive layer can be removed well without contaminating the substrate, and the productivity of thin substrates can be increased.
• the inventors have discovered that the above object can be achieved by using a silicone-containing temporary adhesive, which is characterized in that after bonding a semiconductor substrate and a support via a temporary adhesive layer formed from the temporary adhesive, heating at 260°C for 2 hours and then peeling the semiconductor substrate and support, the temporary adhesive layer remaining on the semiconductor substrate or support has a dissolution rate of 20 ⁇ m/min or more in a dimethylpropionamide solution at 50°C containing 3 mass% tetramethylammonium fluoride, and thus completed the present invention.
• the present invention is a silicone-based resin-containing temporary adhesive that contains a silicone-based resin and temporarily bonds a semiconductor substrate and a support, and is characterized in that when the dissolution rate of the temporary adhesive layer formed with the temporary adhesive is measured by bonding the semiconductor substrate and the support via the temporary adhesive layer formed with the temporary adhesive, heating at 260°C for 2 hours, peeling the semiconductor substrate from the support, and then dissolving the temporary adhesive layer remaining on the semiconductor substrate or the support in a dimethylpropionamide solution at 50°C containing 3% by mass of tetrabutylammonium fluoride, the silicone-based resin-containing temporary adhesive has a dissolution rate of 20 ⁇ m/min or more.
• the support to be temporarily bonded using the silicone-based resin-containing temporary adhesive of the present invention includes a transparent substrate, a silicon wafer, a ceramic substrate, etc., but a transparent substrate is preferred from the viewpoint of the transparency of the laser irradiated when peeling off the support.
• a transparent substrate a glass substrate or a quartz substrate is usually used, and the thickness thereof is usually preferably 300 to 1,000 ⁇ m, more preferably 500 to 800 ⁇ m.
• the semiconductor substrate is also called a semiconductor wafer or simply a wafer.
• the wafer include a silicon wafer, a germanium wafer, a gallium-arsenide wafer, a gallium-phosphorus wafer, and a gallium-arsenide-aluminum wafer.
• the thickness of the wafer is not particularly limited, but is usually preferably 600 to 800 ⁇ m, and more preferably 625 to 775 ⁇ m.
• a circuit board is produced by processing such a wafer to form a circuit.
• the silicone-based resin-containing temporary adhesive of the present invention is preferably used in combination with a laser release agent when temporarily bonding a semiconductor substrate and a support. This laser release agent will now be described.
• the laser peeling layer formed using the laser peeling agent contains a resin containing a condensed ring in the main chain, and is a resin layer (light-shielding layer) having light-shielding properties, and the transmittance of light having a wavelength of 355 nm is preferably 20% or less, more preferably 18% or less, and even more preferably 0 to 15%.
• the laser peeling layer also has a maximum absorption wavelength of preferably 300 to 500 nm, more preferably 300 to 400 nm. Furthermore, the laser peeling layer preferably has a transmittance of light having a wavelength of 300 to 500 nm of 20% or less.
• the resin contained in the laser release layer (hereinafter also referred to as "resin layer I") is preferably made of a cured product of a resin composition (laser release agent, hereinafter also referred to as “resin composition I”) containing a resin (hereinafter also referred to as "resin I”) that contains a repeating unit represented by the following formula (1). Only one type of repeating unit represented by formula (1) may be contained, or two or more types may be contained.
• R 1 to R 3 each independently represent a hydrogen atom, a hydroxyl group, or a monovalent organic group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, provided that at least one of R 1 to R 3 is a hydroxyl group.
• Examples of the monovalent organic group include linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, a neopentyl group, an n-hexyl group, an n-heptyl group, an n-octyl group, an n-nonyl group, an n-decyl group, an n-dodecyl group, an n-pentadecyl group, an n-icosyl group, a cyclopentyl group, a cyclohexyl group, a cyclopentylmethyl group, a cyclohexylmethyl group, a cyclopentylethyl group
• R4 is a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, preferably 1 to 10 carbon atoms, which may have a substituent.
• Examples of the monovalent organic group represented by R4 include an alkyl group, a phenyl group, a naphthyl group, an anthracenyl group, a norbornyl group, and the like, and some of the hydrogen atoms in these groups may be substituted with an alkyl group, an aryl group, an aldehyde group, a halogen atom, a nitro group, a nitrile group, a hydroxy group, and the like.
• Resin I can usually be obtained by polycondensation reaction of naphthol or its derivative with an aldehyde compound at room temperature or under cooling or heating as necessary, without solvent or in a solvent, using an acid or base as a catalyst.
• the naphthol or its derivatives include 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 4-methoxy-1-naphthol, 7-methoxy-2-naphthol, 1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 1,8 -dihydroxynaphthalene, 5-amino-1-naphthol, 2-methoxycarbonyl-1-naphthol, 1-(4-hydroxyphenyl)naphthalene, 6-(4-hydroxyphenyl)-2-naphthol, 6-(cyclohexyl)
• the aldehyde compound may be represented by the following formula (2).
• R 4 -CHO (2) (In the formula, R4 is the same as above.)
• aldehyde compounds represented by formula (2) include formaldehyde, trioxane, paraformaldehyde, acetaldehyde, propylaldehyde, adamantanecarbaldehyde, benzaldehyde, phenylacetaldehyde, ⁇ -phenylpropylaldehyde, ⁇ -phenylpropylaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, and p-nitrobenzaldehyde.
• aldehyde compounds examples include aldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p-ethylbenzaldehyde, p-n-butylbenzaldehyde, 1-naphthylaldehyde, 2-naphthylaldehyde, anthracenecarbaldehyde, pyrenecarbaldehyde, furfural, methylal, phthalaldehyde, isophthalaldehyde, terephthalaldehyde, naphthalenedicarbaldehyde, anthracenedicarbaldehyde, and pyrenedicarbaldehyde.
• the aldehyde compounds can be used alone or in combination of two or more.
• solvents used in the polycondensation reaction include alcohols such as methanol, ethanol, isopropyl alcohol, butanol, ethylene glycol, propylene glycol, diethylene glycol, glycerol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, and propylene glycol monomethyl ether; ethers such as diethyl ether, dibutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran (THF), and 1,4-dioxane; chlorine-based solvents such as methylene chloride, chloroform, dichloroethane, and trichloroethylene; hydrocarbons such as hexane, heptane, benzene, toluene, xylene, and cumene; nitriles such as acetonitrile; ketones such as acetone, ethyl l
• These solvents can be used alone or in combination of two or more. These solvents can be used in an amount of preferably 0 to 2,000 parts by mass, more preferably 10 to 2,000 parts by mass, per 100 parts by mass of the total of naphthol or its derivative and the aldehyde compound.
• the acid catalyst used in the polycondensation reaction may be, for example, inorganic acids such as hydrochloric acid, hydrobromic acid, sulfuric acid, nitric acid, phosphoric acid, and heteropolyacids; organic acids such as oxalic acid, trifluoroacetic acid, methanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, and trifluoromethanesulfonic acid; and Lewis acids such as aluminum trichloride, aluminum ethoxide, aluminum isopropoxide, boron trifluoride, boron trichloride, boron tribromide, tin tetrachloride, tin tetrabromide, dibutyltin dichloride, dibutyltin dimethoxide, dibutyltin oxide, titanium tetrachloride, titanium tetrabromide, titanium(IV) methoxide, titanium
• examples of base catalysts used in the polycondensation reaction include inorganic bases such as sodium hydroxide, potassium hydroxide, barium hydroxide, sodium carbonate, sodium hydrogen carbonate, potassium carbonate, lithium hydride, sodium hydride, potassium hydride, and calcium hydride; alkyl metals such as methyllithium, n-butyllithium, methylmagnesium chloride, and ethylmagnesium bromide; alkoxides such as sodium methoxide, sodium ethoxide, and potassium tert-butoxide; and organic bases such as triethylamine, diisopropylethylamine, N,N-dimethylaniline, pyridine, and 4-dimethylaminopyridine.
• inorganic bases such as sodium hydroxide, potassium hydroxide, barium hydroxide, sodium carbonate, sodium hydrogen carbonate, potassium carbonate, lithium hydride, sodium hydride, potassium hydride, and calcium hydride
• the amount of catalyst used is preferably 0.001 to 100 parts by mass, more preferably 0.005 to 50 parts by mass, per 100 parts by mass of the total of naphthol or its derivative and the aldehyde compound.
• the reaction temperature is preferably from -50°C to the boiling point of the solvent, and more preferably from room temperature to 100°C.
• Polycondensation reaction methods include a method in which naphthol or its derivatives, aldehydes, and a catalyst are charged all at once, and a method in which naphthol or its derivatives and aldehydes are added dropwise in the presence of a catalyst.
• the ratio of naphthol or its derivative to the aldehyde compound used is, in terms of molar ratio, preferably 0.01 to 5, more preferably 0.05 to 2, even more preferably 0.05 to 1, and most preferably 0.1 to 0.9, for the aldehyde compound relative to the total amount of naphthol or its derivative.
• the temperature of the reaction vessel may be raised to 130-230°C and volatile matter removed at around 1-50 mmHg, or an appropriate solvent or water may be added to fractionate the polymer, or the polymer may be dissolved in a good solvent and then reprecipitated in a poor solvent. These methods can be used depending on the properties of the reaction product obtained.
• the weight average molecular weight (Mw) of resin I is preferably 500 to 500,000, more preferably 1,000 to 100,000.
• the polymer dispersity (Mw/Mn, Mn: number average molecular weight) is preferably in the range of 1.2 to 20, more preferably 1 to 10, but if monomer components, oligomer components, or low molecular weight substances with Mw less than 500 are cut, volatile components during baking can be suppressed, and Mn is preferably 500 to 100,000. This can prevent contamination around the bake cup and surface defects caused by volatile components dropping.
• Mw and Mn are polystyrene-equivalent measured values obtained by gel permeation chromatography (GPC) using THF as a solvent.
• the resin composition I preferably contains a crosslinking agent that crosslinks the resin I by a thermal reaction.
• a crosslinking agent an epoxy compound having two or more functional groups in the molecule, an epoxy resin, an amino resin such as methylolmelamine, etc. are preferably used, and a catalyst is preferably added to promote the crosslinking reaction between these crosslinking agents and the polymer.
• Examples of the epoxy compound or epoxy resin include bifunctional, trifunctional, tetrafunctional or higher polyfunctional epoxy resins, such as EOCN-1020 (see the formula below), EOCN-102S, XD-1000, NC-2000-L, EPPN-201, GAN, and NC6000 manufactured by Nippon Kayaku Co., Ltd., and those represented by the formula below.
• EOCN-1020 see the formula below
• EOCN-102S see the formula below
• XD-1000 NC-2000-L
• EPPN-201 EPPN-201
• GAN GAN
• NC6000 manufactured by Nippon Kayaku Co., Ltd.
• the amount of the crosslinking agent is preferably 0.1 to 50 parts by mass, more preferably 0.1 to 30 parts by mass, and even more preferably 1 to 30 parts by mass, per 100 parts by mass of the polymer having the repeating unit represented by formula (1).
• the crosslinking agent may be used alone or in combination of two or more kinds. If the amount of the crosslinking agent is within the above range, a sufficient crosslinking density is obtained, and the obtained cured product functions sufficiently.
• the epoxy resin is used as a crosslinking agent, it is preferable to add a curing accelerator as a catalyst.
• a curing accelerator By including an epoxy resin curing accelerator, the curing reaction can proceed properly and uniformly.
• Epoxy resin curing accelerators include, for example, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, and ethyl isocyanate compounds of these compounds, imidazole compounds such as 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and 2-phenyl-4,5-dihydroxymethylimidazole, 1,8-diazabicyclo[5.4.0]undecene-7 (DBU), 1,5-diazabicyclo[4.3.0]nonene-5 (DBN), organic acid salts of DBU,
• Examples of the epoxy resin curing accelerator include DBU compounds such as phenolic resin salts of DBU and tetraphenylborate salts of DBU derivatives, triorganophosphines such as triphenylphosphine, tributylphosphine, tris(p-methylphenyl)pho
• the amount of epoxy resin curing accelerator is preferably 0.1 to 10 parts by mass, and more preferably 0.2 to 5 parts by mass, per 100 parts by mass of resin I.
• the amino resins such as methylol melamine used in the present invention include one or more compounds selected from the group consisting of amino condensates modified with formalin or formalin-alcohol, and phenolic compounds having an average of two or more methylol groups or alkoxymethylol groups per molecule.
• the amino resin preferably has a weight average molecular weight Mw of 150 to 10,000, more preferably 200 to 3,000. If the Mw is within the above range, sufficient curability is obtained, and the heat resistance of the composition after curing is also good.
• the amino condensate modified with formalin or formalin-alcohol includes, for example, a melamine condensate modified with formalin or formalin-alcohol, or a urea condensate modified with formalin or formalin-alcohol.
• the melamine condensate modified with formalin or formalin-alcohol can be prepared, for example, by modifying a melamine monomer by methylolation with formalin according to a known method, or by further modifying the melamine monomer by alkoxylation with an alcohol to obtain a modified melamine represented by the following formula:
• the alcohol is preferably a lower alcohol, for example, an alcohol having 1 to 4 carbon atoms.
• R 5 to R 10 each independently represent a methylol group, a linear, branched or cyclic alkoxymethyl group containing an alkoxy group having 1 to 4 carbon atoms, or a hydrogen atom, and at least one of them is a methylol group or an alkoxymethyl group.
• modified melamine examples include trimethoxymethyl monomethylol melamine, dimethoxymethyl monomethylol melamine, trimethylol melamine, hexamethylol melamine, and hexamethoxymethylol melamine.
• the modified melamine or a polymer obtained therefrom e.g., an oligomer such as a dimer or trimer
• addition condensation polymerization with formaldehyde in a conventional manner until a desired molecular weight is obtained, thereby obtaining a melamine condensate modified with formalin or formalin-alcohol.
• the modified melamine and one or more of its condensates can be used as a crosslinking agent.
• urea condensates modified with formalin or formalin-alcohol can be prepared, for example, by modifying a urea condensate of the desired molecular weight with formalin by methylolation according to a known method, or by further modifying the urea condensate by alkoxylation with an alcohol.
• modified urea condensate examples include methoxymethylated urea condensate, ethoxymethylated urea condensate, propoxymethylated urea condensate, etc. It is possible to use one or more of these modified urea condensates.
• examples of phenol compounds having an average of two or more methylol groups or alkoxymethylol groups per molecule include (2-hydroxy-5-methyl)-1,3-benzenedimethanol and 2,2',6,6'-tetramethoxymethylbisphenol A.
• amino condensates or phenolic compounds can be used alone or in combination of two or more.
• the amount of the crosslinking agent is preferably 0.1 to 50 parts by mass, and more preferably 1 to 30 parts by mass, per 100 parts by mass of resin I. Within this range, composition I will cure sufficiently, and the resulting cured product will function adequately.
• the thermal acid generator is not particularly limited, but examples thereof include ammonium salts represented by the following formula: (In the formula, R 11 to R 14 each independently represent a hydrogen atom, a linear, branched or cyclic alkyl or oxoalkyl group having 1 to 12 carbon atoms, a linear, branched or cyclic alkenyl or oxoalkenyl group having 2 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl or aryloxoalkyl group having 7 to 12 carbon atoms, and some or all of the hydrogen atoms of these groups may be substituted with alkoxy groups.
• Two selected from R 11 to R 14 may form a ring together with the nitrogen atom to which they are bonded, and the ring is an aliphatic ring having 3 to 10 carbon atoms and having the nitrogen atom in the formula in the ring, or a heteroaromatic ring having 5 to 10 carbon atoms and having the nitrogen atom in the formula in the ring.
• X - represents a sulfonic acid, a perfluoroalkylimide acid, or a perfluoroalkylmethide acid in which at least one ⁇ -position is fluorinated.
• X- include perfluoroalkanesulfonate anions such as triflate anion and nonaflate anion; sulfonate anions in which at least one ⁇ -position is substituted with fluoro; imide anions such as bis(trifluoromethylsulfonyl)imide anion, bis(perfluoroethylsulfonyl)imide anion and bis(perfluorobutylsulfonyl)imide anion; and methanide anions such as tris(trifluoromethylsulfonyl)methanide anion and tris(perfluoroethylsulfonyl)methanide anion.
• imide anions such as bis(trifluoromethylsulfonyl)imide anion, bis(perfluoroethylsulfonyl)imide anion and bis(perfluorobutylsulfonyl)imide anion
• the amount of the thermal acid generator is preferably 0.1 to 15 parts by mass, and more preferably 0.2 to 10 parts by mass, per 100 parts by mass of resin I. Within this range, composition I will cure sufficiently and the storage stability of composition I will be good.
• the laser stripping agent may contain a solvent.
• the solvent include ketones such as cyclohexanone, cyclopentanone, and methyl-2-n-amyl ketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; and esters such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionat
• the laser stripping agent may contain a surfactant, or an antioxidant, etc., as necessary, to further improve heat resistance.
• Surfactants are not particularly limited, but examples thereof include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene olein ether; polyoxyethylene alkylaryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethylene polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate; polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, and polyoxyethylene sorbitan trioleate.
• polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene olein ether
• nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan tristearate, EFTOP (registered trademark) EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd.), Megafac (registered trademark) F171, F172, F173 (manufactured by DIC Corporation), Fluorad (registered trademark) FC430, FC431 (manufactured by 3M), Asahiguard AG 710, Surflon (registered trademark) S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol (registered trademark) E1004, KH-10, KH-20, KH-30, KH-40 (Asahi Glass Co., Ltd.), organosiloxane polymer KP341 (Shin-Etsu Chemical Co., Ltd.), acrylic acid-based or methacrylic acid-based Polyflow No.
• the antioxidant is preferably at least one selected from hindered phenol compounds, hindered amine compounds, organic phosphorus compounds, and organic sulfur compounds, with hindered phenol compounds being particularly preferred.
• the hindered phenol compound is not particularly limited, but the following are preferred.
• 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene (trade name: IRGANOX 1330), 2,6-di-tert-butyl-4-methylphenol (trade name: Sumilizer BHT), 2,5-di-tert-butyl-hydroquinone (trade name: Nocrac NS-7), 2,6-di-tert-butyl-4-ethylphenol (trade name: Nocrac M-17), 2,5-di-tert-amylhydroquinone (trade name: Nocrac c DAH), 2,2'-methylenebis(4-methyl-6-tert-butylphenol) (trade name: Nocrac NS-6), 3,5-di-tert-butyl-4-hydroxy-benzylphosphonate-diethyl ester (trade name: IRGANOX 1222), 4,
• the hindered amine compound is not particularly limited, but the following are preferred.
• p,p'-dioctyldiphenylamine (trade name: IRGANOX 5057), phenyl- ⁇ -naphthylamine (Nocrac PA), poly(2,2,4-trimethyl-1,2-dihydroquinoline) (trade name: Nocrac 224, 224-S), 6-ethoxy-2,2,4-trimethyl-1,2-dihydroquinoline (trade name: Nocrac AW), N,N'-diphenyl-p-phenylenediamine (trade name: Nocrac DP), N,N'-di- ⁇ -naphthyl-p-phenylenediamine (trade name: Nocrac DP), rac White), N-phenyl-N'-isopropyl-p-phenylenediamine (trade name: Nocrac 810NA), N,N'-diallyl-p-phenylenediamine (
• the organic phosphorus compound is not particularly limited, but the following are preferred: For example, bis(2,4-di-tert-butylphenyl)[1,1-biphenyl]-4,4'-diylbisphosphite, 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide (trade name: SANKO-HCA), triethyl phosphite (trade name: JP302), tri-n-butyl phosphite (trade name: JP304), triphenyl phosphite (trade name: Adekastab TPP), diphenyl monophosphate (trade name: Adekastab TPP), diphenyl ...
• Octyl phosphite (trade name: Adeka STAB C), tri(p-cresyl) phosphite (trade name: Chelex-PC), diphenyl monodecyl phosphite (trade name: Adeka STAB 135A), diphenyl mono(tridecyl) phosphite (trade name: JPM313), tris(2-ethylhexyl) phosphite (trade name: JP308), phenyl didecyl phosphite (trade name: Adeka STAB 517), tridecyl phosphite tetraphenyl dipropylene glycol diphosphite (trade name: Adeka STAB 3010), tetraphenyl dipropylene glycol diphosphite (trade name: JPP100), bis(2,4-di-tert-butylphenyl)pentaerythritol diphosphite
• the organic sulfur compound is not particularly limited, but the following are preferred.
• dilauryl-3,3'-thiodipropionate (trade name: Sumilizer TPL-R), dimyristyl-3,3'-thiodipropionate (trade name: Sumilizer TPM), distearyl-3,3'-thiodipropionate (trade name: Sumilizer TPS), pentaerythritol tetrakis (3-lauryl thiopropionate) (trade name: Sumilizer TP-D), ditridecyl-3,3'-thiodipropionate (trade name: Sumilizer T L), 2-mercaptobenzimidazole (trade name: Sumilizer MB), ditridecyl-3,3'-thiodipropionate (trade name: Adekastab AO-503A), 1,3,5-tris- ⁇ -stearylthiopropionyloxyethyl isocyanurate, 3,3'-thiobis
• antioxidants tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane is particularly preferred.
• the amount of the antioxidant added is preferably 0.5 to 5 parts by mass, more preferably 1 to 3 parts by mass, per 100 parts by mass of resin I. Within the above range, sufficient heat resistance is obtained and compatibility is also obtained.
• the antioxidants can be used alone or in combination of two or more types.
• resin composition I When resin composition I is in the form of a solution, it is applied to a support by a method such as spin coating, roll coating, die coating, printing, or dipping, and then prebaked at a temperature of preferably 80 to 200°C, more preferably 100 to 180°C, depending on the volatilization conditions of the solvent, to volatilize the solvent, thereby forming resin composition layer I'.
• a method such as spin coating, roll coating, die coating, printing, or dipping, and then prebaked at a temperature of preferably 80 to 200°C, more preferably 100 to 180°C, depending on the volatilization conditions of the solvent, to volatilize the solvent, thereby forming resin composition layer I'.
• a resin composition layer I' can be formed on the support by a lamination method.
• the resin composition layer I' formed on the support can be further heated and cured to function as the resin layer I (laser peeling layer).
• Heat curing can be performed using a hot plate or oven, and the conditions are usually 100 to 350°C for 5 to 10 minutes, and preferably 150 to 300°C for 3 to 8 minutes. This curing reaction can also be achieved by forming a wafer laminate in an uncured state without curing the resin composition layer I', and then heating the entire laminate.
• the thickness of the resin layer I (laser peelable layer) formed on the support is preferably 0.1 to 50 ⁇ m, and more preferably 0.3 to 30 ⁇ m. If the thickness is within the above range, the light blocking properties are sufficient and the film has good flatness.
• the silicone-based resin-containing temporary adhesive of the present invention satisfies the above-mentioned requirement for the dissolution rate, and preferably contains a curable silicone resin containing the following components.
• A an organopolysiloxane having two or more alkenyl groups in each molecule;
• B an organohydrogenpolysiloxane containing, per molecule, two or more hydrogen atoms bonded to silicon atoms (Si—H groups), and
• C a platinum-based catalyst.
• the composition contains an amount such that the molar ratio of Si-H groups in component (B) to alkenyl groups in component (A) is 0.3 to 10.
• the silicone-based resin-containing temporary adhesive of the present invention preferably further contains component (D), i.e., components (A) to (D) below.
• component (D) organopolysiloxane having two or more alkenyl groups per molecule: 100 parts by mass
• This silicone-based resin-containing temporary adhesive is a resin used to form a silicone-based resin layer (hereinafter also referred to as "resin layer II").
• the component (A) is an organopolysiloxane having two or more alkenyl groups in one molecule.
• Examples of the component (A) include linear or branched diorganopolysiloxanes containing two or more alkenyl groups in one molecule, and organopolysiloxanes having a three-dimensional network structure containing two or more alkenyl groups in one molecule and having siloxane units (Q units) represented by SiO4/2 units.
• diorganopolysiloxanes or organopolysiloxanes having a three-dimensional network structure with an alkenyl group content of 0.6 to 9 mol% are preferred.
• the alkenyl group content is the ratio (mol%) of the number of alkenyl groups to the number of Si atoms in the molecule.
• organopolysiloxanes examples include those represented by the following formulas (A-1), (A-2) and (A-3). These may be used alone or in combination of two or more.
• R 21 to R 36 are each independently a monovalent hydrocarbon group other than an aliphatic unsaturated hydrocarbon group, and X 1 to X 5 are each independently an alkenyl-containing monovalent organic group.
• a and b are each independently an integer of 0 to 3.
• c 1 , c 2 , d 1 and d 2 are integers satisfying 0 ⁇ c 1 ⁇ 10, 2 ⁇ c 2 ⁇ 10, 0 ⁇ d 1 ⁇ 100 and 0 ⁇ d 2 ⁇ 100, with the proviso that a+b+c 1 ⁇ 2. It is preferable that a, b, c 1 , c 2 , d 1 and d 2 are a combination of numbers such that the alkenyl group content is 0.6 to 9 mol%.
• e is an integer of 1 to 3.
• f 1 , f 2 and f 3 are numbers such that (f 2 +f 3 )/f 1 is 0.3 to 3.0 and f 3 /(f 1 +f 2 +f 3 ) is 0.01 to 0.6.
• the monovalent hydrocarbon group other than the aliphatic unsaturated hydrocarbon group preferably has 1 to 10 carbon atoms, and examples thereof include alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, n-pentyl, and n-hexyl; cycloalkyl groups such as cyclopentyl and cyclohexyl; and aryl groups such as phenyl and tolyl. Of these, alkyl groups such as methyl or phenyl are preferred.
• the alkenyl-containing monovalent organic group preferably has 2 to 10 carbon atoms, and examples thereof include alkenyl groups such as vinyl, allyl, hexenyl, and octenyl; (meth)acryloylalkyl groups such as acryloylpropyl, acryloylmethyl, and methacryloylpropyl; (meth)acryloxyalkyl groups such as acryloxypropyl, acryloxymethyl, methacryloxypropyl, and methacryloxymethyl; and alkenyl-containing monovalent hydrocarbon groups such as cyclohexenylethyl and vinyloxypropyl.
• the vinyl group is preferred from an industrial viewpoint.
• a and b are each independently an integer of 0 to 3. It is preferable that a is 1 to 3, since the molecular chain ends are blocked with alkenyl groups, and the highly reactive molecular chain end alkenyl groups allow the reaction to be completed in a short time. From the standpoint of cost, it is industrially preferable that a is 1.
• the properties of the alkenyl-containing diorganopolysiloxane represented by formula (A-1) or (A-2) are preferably oil-like or raw rubber-like.
• the organopolysiloxane represented by formula (A-3) contains SiO 4/2 units and has a three-dimensional network structure.
• e is each independently an integer of 1 to 3, and is industrially preferably 1 in terms of cost.
• the product of the average value of e and f 3 /(f1+f2+f3) is preferably 0.02 to 1.5, and more preferably 0.03 to 1.0.
• the organopolysiloxane represented by formula (A-3) may be used as a solution dissolved in an organic solvent.
• the number average molecular weight (Mn) of the organopolysiloxane of component (A) is preferably 100 to 1,000,000, and more preferably 1,000 to 100,000. Mn in the above range is preferable in terms of workability associated with the viscosity of the composition and processability associated with the storage modulus after curing.
• Mn is a polystyrene-equivalent value measured by gel permeation chromatography using toluene as a solvent.
• the (A) component may be used alone or in combination of two or more.
• the amount of the organopolysiloxane represented by formula (A-3) used is preferably 1 to 1,000 parts by mass, and more preferably 10 to 500 parts by mass, per 100 parts by mass of the organopolysiloxane represented by formula (A-1).
• the (B) component is a crosslinking agent, and is an organohydrogenpolysiloxane having at least two, preferably three or more, hydrogen atoms bonded to silicon atoms (SiH groups) in one molecule.
• the organohydrogenpolysiloxane may be linear, branched, or cyclic.
• the organohydrogenpolysiloxane may be used alone or in combination of two or more.
• the viscosity of the organohydrogenpolysiloxane of component (B) at 25°C is preferably 1 to 5,000 mPa ⁇ s, and more preferably 5 to 500 mPa ⁇ s.
• the viscosity is a value measured at 25°C using a rotational viscometer.
• the Mn of component B is measured by GPC in the same manner as component A.
• the Mn of the organohydrogenpolysiloxane of component (B) is preferably 100 to 100,000, and more preferably 500 to 10,000. Mn in the above range is preferable in terms of workability associated with the viscosity of the composition and processability associated with the storage modulus after curing.
• the (B) component is preferably blended so that the molar ratio (SiH groups/alkenyl groups) of the sum of the SiH groups in the (B) component to the sum of the alkenyl groups in the (A) component is in the range of 0.3 to 10, and more preferably in the range of 1.0 to 8.0. If the molar ratio is 0.3 or more, the crosslink density will not be low and problems such as the temporary adhesive layer (silicone-based resin layer) not curing will not occur. Furthermore, if the molar ratio is 10 or less, the crosslink density will not be too high, sufficient adhesive strength and tack will be obtained, and the usable time of the treatment liquid can be extended.
• the molar ratio SiH groups/alkenyl groups
• Component (C) is capable of functioning as a hydrosilylation catalyst, and preferably a platinum group metal-based hydrosilylation catalyst can be used, more preferably a platinum-based catalyst as described above.
• Component (C) is a catalyst that promotes the addition reaction between the alkenyl group in component (A) and the hydrosilyl group in component (B).
• This hydrosilylation catalyst is generally a compound of a noble metal, and is expensive, so platinum or a platinum compound, which is relatively easy to obtain, is often used.
• platinum compounds include chloroplatinic acid or a complex of chloroplatinic acid with an olefin such as ethylene, a complex of chloroplatinic acid with an alcohol or vinylsiloxane, and metallic platinum supported on silica, alumina, carbon, etc.
• platinum group metal catalysts other than platinum compounds rhodium, ruthenium, iridium, and palladium compounds are also known, and examples thereof include RhCl( PPh3 ) 3 , RhCl(CO)( PPh3 ) 2 , Ru3 (CO) 12 , IrCl(CO)( PPh3 ) 2 , and Pd( PPh3 ) 4 .
• Ph is a phenyl group.
• the amount of component (C) added is an effective amount, usually 0.1 to 5,000 ppm in terms of metal atom weight relative to the total mass of components (A), (B), and (D), but 1 to 1,000 ppm is preferable. If it is 0.1 ppm or more, the curability of the composition will not decrease, the crosslink density will not decrease, and the retention strength will not decrease. If it is 5,000 ppm or less, side reactions such as dehydrogenation during curing can be suppressed, and the usable time of the treatment liquid can also be extended.
• Component (D) is a non-functional organopolysiloxane.
• “non-functional” means that the molecule does not have any reactive groups such as hydrogen atoms, halogen atoms, hydroxyl groups, or alkoxy groups directly bonded to silicon atoms, and does not have any reactive groups such as alkenyl groups or epoxy groups bonded to silicon atoms directly or via any group.
• Such non-functional organopolysiloxanes include, for example, organopolysiloxanes having a monovalent hydrocarbon group other than an aliphatic unsaturated hydrocarbon group, which is unsubstituted or substituted and has 1 to 12 carbon atoms, preferably 1 to 10 carbon atoms.
• Examples of such monovalent hydrocarbon groups include alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, hexyl, and heptyl; cycloalkyl groups such as cyclohexyl; aryl groups such as phenyl, tolyl, xylyl, and naphthyl; and aralkyl groups such as benzyl and phenethyl.
• some or all of the hydrogen atoms in these groups may be substituted with halogen atoms such as chlorine, fluorine, and bromine atoms.
• the monovalent hydrocarbon group is preferably an alkyl group or an aryl group, and more preferably a methyl group or a phenyl group.
• the molecular structure of the non-functional organopolysiloxane of component (D) is not particularly limited and may be linear, branched, cyclic, etc., but linear or branched organopolysiloxanes are preferred, and linear or branched diorganopolysiloxanes whose main chain is essentially composed of repeating diorganosiloxane units and whose molecular chain ends are blocked with triorganosiloxy groups are particularly preferred.
• the non-functional organopolysiloxane of component (D) preferably has a viscosity of 100 to 500,000 mPa ⁇ s in a 30% by weight toluene solution at 25°C, more preferably 200 to 100,000 mPa ⁇ s, from the viewpoints of workability of the composition, applicability to substrates, mechanical properties of the cured product, and peelability of the support. If it is within the above range, it has an appropriate molecular weight, so it does not volatilize when the silicone resin composition is heated and cured, making it difficult to obtain the desired effect, does not cause wafer cracking in wafer thermal processes such as CVD, and is preferable because it has good workability and applicability.
• the viscosity of component D is measured using a rotational viscometer (25°C).
• the linear non-functional organopolysiloxane may be a dimethylsiloxane polymer capped with trimethylsiloxy groups at both molecular chain ends, a diphenylpolysiloxane capped with trimethylsiloxy groups at both molecular chain ends, a 3,3,3-trifluoropropylmethylsiloxane polymer capped with trimethylsiloxy groups at both molecular chain ends, a dimethylsiloxane-diphenylsiloxane copolymer capped with trimethylsiloxy groups at both molecular chain ends, a dimethylsiloxane-3,3,3-trifluoropropylmethyl copolymer capped with trimethylsiloxy groups at both molecular chain ends, Examples include diphenylsiloxane/3,3,3-trifluoropropylmethyl copolymers capped at both ends with trimethylsiloxy groups, dimethylsiloxane/3,3,3-trifluoropropy
• branched non-functional organopolysiloxane examples include those shown below.
• g1, g2, g3, g4, g5, g1', g2', g3', g4', g5', and g6' each independently represent any integer such that the viscosity of a 30 mass % toluene solution of the compound at 25° C. falls within the above range.
• the amount of the non-functional organopolysiloxane of component (D) is 0.1 to 200 parts by mass, preferably 1 to 180 parts by mass, and more preferably 10 to 170 parts by mass, per 100 parts by mass of component (A). When the amount of component (D) is within the above range, it becomes possible to easily peel the wafer from the support.
• the non-functional organopolysiloxane of component (D) may be used alone or in combination of two or more types. It is also preferable that the properties are oil-like or raw rubber-like.
• the blending amount of the non-functional organopolysiloxane of component (D) so that the proportion of dimethylsiloxane units in the non-volatile components of the silicone resin-containing temporary adhesive is 20 mass% or more. There is no particular upper limit, but it is about 95 mass%.
• the proportion of dimethylsiloxane units By setting the proportion of dimethylsiloxane units at such a rate, the dissolution rate of the temporary adhesive layer formed from the temporary adhesive can be increased.
• the dissolution rate is 20 ⁇ m/min or more. There is no particular upper limit, but it is about 200 ⁇ m/min or less. It is further preferable to set it to at least 50 ⁇ m/min or more.
• the heat-curable silicone resin composition may further contain a reaction inhibitor as component (E), which is optionally added as necessary to prevent the composition from thickening or gelling when the composition is prepared or applied to a substrate.
• the reaction inhibitors include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, 3,5-dimethyl-1-hexyn-3-ol, 1-ethynylcyclohexanol, 3-methyl-3-trimethylsiloxy-1-butyne, 3-methyl-3-trimethylsiloxy-1-pentyne, 3,5-dimethyl-3-trimethylsiloxy-1-hexyne, 1-ethynyl-1-trimethylsiloxycyclohexane, bis(2,2-dimethyl-3-butynyloxy)dimethylsilane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, 1,1,3,3-tetramethyl-1,3-divinyldisiloxane, and the like. Of these, 1-ethynylcyclohexanol and 3-methyl-1-butyn-3-ol are preferred.
• thermosetting silicone resin composition contains component (E), its content should be adjusted to an optimal amount since the controllability differs depending on the chemical structure.
• the content is preferably 0.001 to 10 parts by mass, and more preferably 0.01 to 10 parts by mass, per 100 parts by mass of components (A), (B), and (D) combined. If the content of component (E) is within the above range, the usable time of the composition is long, long-term storage stability is obtained, and curability and workability are good.
• the thermosetting silicone resin composition may further contain an organopolysiloxane containing R A3SiO0.5 units (wherein R A are each independently an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms) and SiO2 units, in which the molar ratio of RA3SiO0.5 units to SiO2 units ( R A3SiO0.5 / SiO2 ) is 0.3 to 1.8.
• the amount added is preferably 0 to 500 parts by mass per 100 parts by mass of component (A).
• the silicone resin-containing temporary adhesive of the present invention preferably contains a heat resistance improver.
• a heat resistance improver is preferably at least one selected from a hindered phenol compound and a hindered amine compound.
• the hindered phenol compound is not particularly limited, but the following are preferred.
• 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene (trade name: IRGANOX 1330), 2,6-di-tert-butyl-4-methylphenol (trade name: Sumilizer BHT), 2,5-di-tert-butyl-hydroquinone (trade name: Nocrac NS-7), 2,6-di-tert-butyl-4-ethylphenol (trade name: Nocrac M-17), 2,5-di-tert-amylhydroquinone (trade name: Nocrac c DAH), 2,2'-methylenebis(4-methyl-6-tert-butylphenol) (trade name: Nocrac NS-6), 3,5-di-tert-butyl-4-hydroxy-benzylphosphonate-diethyl ester (trade name: IRGANOX 1222), 4,
• the hindered amine compound is not particularly limited, but the following are preferred.
• p,p'-dioctyldiphenylamine (trade name: IRGANOX 5057), phenyl- ⁇ -naphthylamine (trade name: Nocrac PA), poly(2,2,4-trimethyl-1,2-dihydroquinoline) (trade name: Nocrac 224, 224-S), 6-ethoxy-2,2,4-trimethyl-1,2-dihydroquinoline (trade name: Nocrac AW), N,N'-diphenyl-p-phenylenediamine (trade name: Nocrac DP), N,N'-di- ⁇ -naphthyl-p-phenylenediamine (trade name: Nocrac White), N-phenyl-N'-isopropyl-p-phenylenediamine (trade name: Nocrac 810NA), N,N'-diallyl-p-phenylenediamine (trade name
• the amount of such heat resistance improver is preferably 0.5 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, and even more preferably 1 to 3 parts by mass, per 100 parts by mass of silicone-based resin.
• the heat resistance improver can be added during synthesis of the resin or when mixing the resin with other processed materials.
• a filler such as silica may be added to the thermosetting silicone resin composition to further improve the heat resistance of the resulting temporary adhesive layer.
• thermosetting silicone resin composition may be used in the form of a solution by adding a solvent in order to improve workability and mixability by lowering the viscosity of the composition, and to adjust the film thickness of the temporary adhesive layer.
• a solvent used as long as it can dissolve the above-mentioned components, but preferred solvents include hydrocarbon solvents such as pentane, hexane, cyclohexane, isooctane, nonane, decane, p-menthane, pinene, isododecane, and limonene.
• the method of making the solution may include a method in which the thermosetting silicone resin composition is prepared, and then a solvent is added to adjust the viscosity to the desired level, or a method in which the highly viscous components (A), (B) and/or (D) are first diluted with a solvent to improve workability and mixability, and then the remaining components are mixed.
• the mixing method used to make the solution may be selected appropriately based on the viscosity of the composition and workability, such as a shaking mixer, a magnetic stirrer, or various mixers.
• the amount of solvent to be added may be set appropriately from the viewpoints of adjusting the viscosity and workability of the composition, the film thickness of the temporary adhesive layer, etc., but is preferably 5 to 900 parts by mass, and more preferably 10 to 400 parts by mass, per 100 parts by mass of the thermosetting silicone resin composition.
• the temporary adhesive layer can be formed by applying the thermosetting silicone resin composition onto a substrate by a method such as spin coating or roll coating.
• a method such as spin coating or roll coating.
• the viscosity of the dissolved thermosetting silicone resin composition at 25°C is preferably 1 to 100,000 mPa ⁇ s, and more preferably 10 to 10,000 mPa ⁇ s.
• thermosetting silicone resin composition has a 180° peel strength of a 25 mm wide test piece (e.g., a glass test piece) at 25°C after curing that is usually 2 to 50 gf, but is preferably 3 to 30 gf, and more preferably 5 to 20 gf. If it is 2 gf or more, there is no risk of the wafer slipping during wafer grinding, and if it is 50 gf or less, the wafer can be easily peeled off.
• a 25 mm wide test piece e.g., a glass test piece
• the thermosetting silicone resin composition has a storage modulus at 25°C after curing of 1,000 Pa or more and 1,000 MPa or less, preferably 10,000 Pa or more and 100 MPa or less. If the storage modulus is 1,000 Pa or more, the film formed is strong and there is no risk of the wafer shifting or the associated wafer cracking during wafer grinding, and if it is 1,000 MPa or less, deformation stress during wafer thermal processes such as CVD can be alleviated and the film is stable during wafer thermal processes.
• circuit board processing method Next, a method for processing a circuit board using a silicone-based resin-containing temporary adhesive will be described.
• the method for fabricating a circuitized substrate of the present invention may include the following steps. (a) preparing a laminate including a circuit board as the semiconductor substrate and the support body, the circuit board and support body being temporarily bonded by a silicone-based resin layer using the silicone-based resin-containing temporary adhesive of the present invention and a laser release layer using the laser release agent; (b) processing the back surface of the laminate; (c) separating the support from the laminate by laser irradiation from the support side; (d) A step of removing the silicone-based resin layer and the laser release layer from the separated laminate with a cleaning solution having a temperature of 40° C. to 60° C., and taking out only the circuit board.
• step (a) is a step of preparing a laminate including a circuit board and a support as a semiconductor substrate. More specifically, this step can be performed as follows, but is not limited thereto.
• Step (a1) is a step of forming a resin layer I having a light-shielding property on a support
• step (a1') is a step of forming a resin composition layer I' on a support.
• the resin composition I for forming the resin layer I is a solution
• it is applied onto the support by a method such as spin coating or roll coating, and pre-baked at a temperature of preferably 80 to 200 ° C., more preferably 100 to 180 ° C. depending on the volatilization conditions of the solvent, and the solvent is volatilized to form a resin composition layer I'.
• the resin composition I is a film-like composition
• the resin composition layer I' is formed on the support by a lamination method.
• the resin composition layer I' formed on the support can function as the resin layer I by being heated and cured.
• Heat curing can be performed using a hot plate or oven, and the temperature is usually 100 to 350°C, preferably 150 to 300°C.
• the curing time is usually 1 to 10 minutes, preferably 2 to 8 minutes. This curing reaction can also be achieved by forming a wafer laminate in an uncured state without curing the resin composition layer I', and then heating the entire laminate.
• Step (a2) is a step of forming a resin layer II on the circuit formation surface of a semiconductor substrate (wafer)
• step (a2') is a step of forming a resin layer II on the resin layer I or resin composition layer I'.
• the silicone-based resin-containing temporary adhesive is a solution, it can be applied to the semiconductor substrate (wafer) by a method such as spin coating, roll coating, die coating, printing, dipping, or the like, and then heated at 130 to 190°C using a hot plate or oven to form the resin layer II.
• a resin layer II can be formed on the wafer by a lamination method.
• Step (a3) is a step of bonding the resin layer I or resin composition I' and the resin layer II under reduced pressure
• step (a3') is a step of bonding the resin layer II on the support and the circuit formation surface of the wafer under reduced pressure.
• the reduced pressure condition is preferably 0.1 to 100 Pa, more preferably 1 to 80 Pa.
• the substrates are uniformly pressure-bonded and bonded under reduced pressure, preferably in a temperature range of 40 to 240°C, more preferably 60 to 220°C.
• Step (a4) is a step of thermally curing the resin composition layer A' of the wafer laminate bonded in step (a3) or (a4') to form a resin layer I and bond it to a resin layer II. After the wafer laminate is formed, it is thermally cured by heating at 120 to 260°C, preferably 150 to 250°C, for 1 minute to 4 hours, preferably 3 minutes to 2 hours.
• the laminate can be prepared (step a).
• Step (b) is a process of processing the back surface of the laminate.
• This process is a process of processing the non-circuit-forming surface of a wafer obtained by grinding the non-circuit-forming surface of a semiconductor substrate (wafer), i.e., a wafer thinned by back grinding.
• This process includes various processes used at the wafer level. Examples include wafer surface treatment, electrode formation, metal wiring formation, protective film formation, and the like.
• CVD for wafer surface treatment laser annealing, metal sputtering for forming electrodes, vapor deposition, wet etching for etching a metal sputtering layer, application of resist to form a mask for metal wiring formation, exposure, and development to form a pattern, resist peeling, dry etching, formation of metal plating, formation of an organic film for surface protection, silicon etching for TSV formation, oxide film formation on the silicon surface, and other conventionally known processes are included.
• it is desirable for the wafer laminate to have resistance over a wide range in a high temperature range up to about 400 ° C., and it is particularly desirable for the wafer laminate to have strength and life even at temperatures of 300 ° C. or higher.
• Step (c) is a step of peeling off the support from the thin wafer laminate processed in step (b). More specifically, it is a step of separating the support from the laminate by irradiating a laser from the support side of the laminate. This peeling step is generally carried out under relatively low temperature conditions, such as around room temperature. (c1) bonding a dicing tape to the processed surface (back surface) of the processed wafer; (c2) vacuum-adsorbing the dicing tape surface onto the adsorption surface; (c3) It is preferable to include, for example, irradiating a 355 nm laser from the support side of the thin wafer laminate to peel off the support from the thin wafer laminate. In this way, the support can be easily peeled off from the wafer laminate, and the subsequent dicing step can be easily performed.
• the dicing tape can be a known one using polyester, polyethylene film, or the like.
• the optional step (x) is a step of peeling off the resin layer I and the resin layer II remaining without being decomposed by the laser from the processed semiconductor substrate (wafer) after peeling off the support in step (c) by tape peel or the like.
• This peeling step is generally carried out at relatively low temperatures, from room temperature to about 60°C.
• the peeling method in step (x) includes fixing the wafer after step (c) horizontally, attaching a peeling tape material to the exposed undecomposed resin layer I, and peeling off the tape material by a peeling method, thereby peeling off the undecomposed resin layer I and resin layer II from the processed wafer.
• any tape material can be used as long as it is removable, but tapes using silicone adhesive are particularly preferred, such as polyester film adhesive tapes No. 646S and No. 648 manufactured by Teraoka Seisakusho Co., Ltd.
• the laminate when peeling off the tape material using the peel method, it is preferable to peel off the laminate in a heated state.
• the heating temperature is preferably 30°C to 60°C, and more preferably 35°C to 55°C. If the laminate is in a heated state in this way, the adhesive strength between the resin layer II and the wafer is reduced, making it easier to peel off.
• Step (d) In addition, after the step (x) is performed, or after the step (c), without performing the step (x), it is preferable to perform a step (d) in which the silicone resin layer (resin layer I) and the laser peeling layer (resin layer II) are removed from the laminate separated in the step (c) with a cleaning solution having a temperature in the range of room temperature to 60 ° C. not exceeding the flash point, and only the circuit-attached substrate is taken out. That is, this step is a step of removing the temporary adhesive layer remaining on the circuit-forming surface of the peeled wafer.
• the step (x) On the circuit-forming surface of the semiconductor substrate (wafer) peeled off by the step (x), a small amount of the resin layer II may remain in part, and the removal of the resin layer II can be performed, for example, by cleaning the wafer. If the step (x) is not performed, more resin layer II often remains.
• a cleaning solution that dissolves the components in the resin layer II can be used, and specific examples include pentane, hexane, cyclohexane, decane, isononane, p-menthane, pinene, isododecane, and limonene. These solvents may be used alone or in combination of two or more.
• a base or an acid may be added to the above-mentioned solvent.
• bases that can be used include amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia, and ammonium salts such as tetramethylammonium hydroxide.
• acids examples include organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid.
• the amount of the added solution is 0.01 to 10% by mass, preferably 0.1 to 5% by mass, in terms of concentration in the cleaning solution.
• an existing surfactant may be added to improve the removability of the remaining residue.
• Possible cleaning methods include a method of using the above-mentioned solution to perform cleaning with a paddle, a method of cleaning with a spray, and a method of immersion in a cleaning solution tank.
• the temperature is preferably 10 to 80°C, and more preferably 15 to 65°C. If necessary, the resin layer II can be dissolved in the dissolving solution, and then finally rinsed with water or alcohol, and then dried to obtain a thin wafer.
• the support, resin layer, and substrate having a circuit on its surface are combined, and the support is peeled off, and the remaining resin layer is washed off (tape peel may also be used) to peel off the resin layer, ultimately obtaining a thin wafer.
• the present invention will be described in more detail below with reference to Preparation Examples, Examples, and Comparative Examples, but the present invention is not limited to these Examples.
• parts indicate parts by mass.
• the weight average molecular weight (Mw) and number average molecular weight (Mn) are values measured in terms of polystyrene by GPC using THF as a solvent.
• the acid generator AG used in the following Examples is as follows. A.G.
• thermosetting silicone resin solution D1 0.4 parts by mass of catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd., platinum concentration 1.0% by mass) and 1 part by mass of tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane were added, mixed, and filtered through a 1 ⁇ m membrane filter to prepare thermosetting silicone resin solution D1.
• the molar ratio of Si-H groups of organohydrogenpolysiloxane having Si-H groups to alkenyl groups in dimethylpolysiloxane having alkenyl groups in the resin solution was 1.0.
• the viscosity of resin solution D1 at 25° C. was 2 Pa ⁇ s.
• the molar ratio (Si-H/Si-Vi) of the Si-H groups in the organohydrogenpolysiloxane having Si-H groups to the alkenyl groups in the dimethylpolysiloxane having alkenyl groups in Preparation Example 1 is calculated from the following formula (where PDMS is dimethylpolysiloxane, and POHS is organohydrogenpolysiloxane): (1) Amount of Si-Vi from component (A-1) (mol) (PDMS addition amount/PDMS molecular weight) ⁇ PDMS molecular weight/(D unit molecular weight ⁇ D unit mol %/100+D Vi unit molecular weight ⁇ D unit mol %/100) ⁇ D Vi unit mol %/100 (2) Amount of Si-H from component (A-2) (mol) (POHS addition amount/POHS molecular weight) ⁇ number of siloxane units with H bonded in one molecule (3) Si-H/Si-Vi value: amount of Si-
• Preparation Example 2 A solution consisting of 70 parts by mass of a vinylmethylpolysiloxane having an Mn of 7,000 and consisting of 50 mol % of SiO 4/2 units (Q units ), 48 mol % of (CH 2 ⁇ CH) 3 SiO 1/2 units ( M units), and 2 mol % of (CH 2 ⁇ CH ) 3 SiO 1/2 units (Vi units), and 70 parts by mass of p-menthane, a solution consisting of 3 parts by mass of an organohydrogenpolysiloxane represented by M-6 having an Mn of 2,400 and 5 parts by mass of p-menthane, and 0.6 parts by mass of 1-ethynylcyclohexanol were added and mixed to a solution consisting of 80 parts by mass of a dimethyldiphenylpolysiloxane having an Mn of 50,000 and having 2.5 mol % of (CH 2 ⁇ CH)(CH 3 )SiO 2/2 units (D Vi units) and 3
• thermosetting silicone resin solution D2 0.4 parts by mass of catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd., platinum concentration 1.0 mass%) and 1.5 parts by mass of tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane were added, mixed, and filtered through a 1 ⁇ m membrane filter to prepare thermosetting silicone resin solution D2.
• the molar ratio of the Si-H group of the organohydrogenpolysiloxane having a Si-H group to the alkenyl group in the dimethylpolysiloxane having an alkenyl group in the resin solution was 1.0.
• the viscosity of resin solution D2 at 25 ° C. was 1.5 Pa s.
• Preparation Example 3 A solution consisting of 70 parts by mass of dimethylpolysiloxane having 5 mol % (CH 2 ⁇ CH)(CH 3 )SiO 2/2 units (D Vi units) and Mn of 10,000 , 100 parts by mass of p-menthane, 5 parts by mass of organohydrogenpolysiloxane represented by M - 6 having Mn of 2,400, and 7 parts by mass of p-menthane, and 0.6 parts by mass of 1-ethynylcyclohexanol were added and mixed to a solution consisting of 90 parts by mass of dimethylpolysiloxane having 2.5 mol % (CH 2 ⁇ CH)(CH 3 )SiO 2/2 units (D Vi units) and Mn of 50,000.
• thermosetting silicone resin solution D3 0.4 parts by mass of catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd., platinum concentration 1.0% by mass) and 1 part by mass of tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane were added, mixed, and filtered through a 1 ⁇ m membrane filter to prepare thermosetting silicone resin solution D3.
• the resin solution the molar ratio of Si-H groups in the organohydrogenpolysiloxane having an Si-H group to the alkenyl groups in the dimethylpolysiloxane having an alkenyl group was 1.0.
• the viscosity of resin solution D3 at 25° C. was 3 Pa ⁇ s.
• Preparation Example 4 20 parts of resin A1 (having a repeating unit of the following structure, Mw was 3,200, and the degree of dispersion (Mw/Mn) was 2.44), 1 part of acid generator AG, and 4 parts of Nikalac Mw390 (manufactured by Sanwa Chemical Co., Ltd.) as a crosslinking agent were dissolved in 100 parts of PGMEA containing 0.1 mass % of silicone surfactant KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.), and filtered through a 0.1 ⁇ m fluororesin filter to obtain resin composition A1 (laser release agent). The transmittance was 1%, and the transmittance was measured using a UV3600i (Shimadzu Corporation) at a wavelength of 355 nm.
• thermosetting silicone resin solution D4 was prepared in the same manner as in Preparation Example 1 except that tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane was not added.
• thermosetting silicone resin solution D5 0.4 parts by mass of catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd., platinum concentration 1.0% by mass) and 1 part by mass of tetrakis[methylene-(3,5-di-tert-butyl-4-hydroxyhydrocinnamate)]methane were added, mixed, and filtered through a 1 ⁇ m membrane filter to prepare thermosetting silicone resin solution D5.
• the molar ratio of the Si-H group of the organohydrogenpolysiloxane having a Si-H group to the alkenyl group in the dimethylpolysiloxane having an alkenyl group in the resin solution was 1.0.
• the viscosity of resin solution D5 at 25° C. was 0.9 Pa ⁇ s.
• D1 to D5 were spin-coated onto a silicon wafer (thickness: 725 ⁇ m) with a diameter of 200 mm, and then heated on a hot plate at 100°C for 2 minutes to form a resin layer II with the thickness shown in Table 1.
• the glass plate-resin layer I and resin layer II-wafer surfaces were aligned in a vacuum lamination device (EVG520IS, EVG) at a reduced pressure of 1 Pa or less under the conditions shown in Table 1, and then heated on a hot plate at 150°C for 10 minutes to produce a wafer laminate.
• EVG520IS, EVG vacuum lamination device
• Adhesion test 200 mm wafer bonding was performed using EVG520IS wafer bonding machine manufactured by EVG Corporation.
• the bonding temperature was the value shown in Table 1, the pressure inside the chamber during bonding was 1 Pa or less, and the loads were D1 to D5.
• the wafers were cooled to room temperature, and the bonding condition of the interface was checked visually and with an optical microscope. If no abnormalities such as air bubbles occurred at the interface, the bonding condition was evaluated as good and indicated with a " ⁇ ", and if abnormalities occurred, the bonding condition was evaluated as poor and indicated with a " ⁇ ".
• the peelability of the support was evaluated by the following method. First, a dicing tape was attached to the wafer side of the wafer laminate using a dicing frame, and the dicing tape surface was set on an adsorption plate by vacuum adsorption. Then, a 355 nm laser was irradiated on the entire surface from the support side. When the support and wafer could be peeled off without cracking, it was indicated by " ⁇ ", and when it could not be peeled off or when it could be peeled off but an abnormality such as cracking occurred, it was evaluated as defective and indicated by " ⁇ ".
• Dissolution rate test The dissolution rate test by solvent was evaluated by the following method. A 200 mm wafer with a remaining resin layer was immersed for 1 minute at 50° C. with the resin layer facing up, using a cleaning solution prepared by dissolving 3% by mass of tetrabutylammonium fluoride in dimethylpropionamide as a cleaning solvent and filtering the solution through a 1 ⁇ m filter, and then immersed for 1 minute in isopropyl alcohol (IPA), and then placed on a hot plate at 120° C. for 3 minutes, after which the film thickness was measured.
• IPA isopropyl alcohol
• Dissolution rate ((thickness on silicon wafer after application) - (thickness after cleaning test)) / (during immersion in cleaning solution)
• a silicone-based resin-containing temporary adhesive that contains a silicone-based resin and temporarily bonds a semiconductor substrate and a support
• the dissolution rate of the temporary adhesive layer formed from the temporary adhesive is measured by bonding the semiconductor substrate and the support via the temporary adhesive layer formed from the temporary adhesive, heating at 260°C for 2 hours, peeling the semiconductor substrate from the support, and then dissolving the temporary adhesive layer remaining on the semiconductor substrate or the support in a dimethylpropionamide solution at 50°C containing 3 mass% tetrabutylammonium fluoride.
• the silicone-based resin-containing temporary adhesive is characterized in that the dissolution rate is 20 ⁇ m/min or more.
• the silicone-based resin is a curable silicone resin, and the curable silicone resin is (A) an organopolysiloxane having two or more alkenyl groups in each molecule; (B) an organohydrogenpolysiloxane containing, in each molecule, two or more hydrogen atoms bonded to silicon atoms (Si—H groups), and (C) a platinum-based catalyst;
• the silicone-based resin-containing temporary adhesive according to any one of [1] to [3] above, which is a composition containing an amount such that a molar ratio of Si—H groups in component (B) to alkenyl groups in component (A) is 0.3 to 10.
• the present invention is not limited to the above-described embodiment.
• the above-described embodiment is merely an example, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included within the technical scope of the present invention.

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