WO2024185473A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2024185473A1
WO2024185473A1 PCT/JP2024/005698 JP2024005698W WO2024185473A1 WO 2024185473 A1 WO2024185473 A1 WO 2024185473A1 JP 2024005698 W JP2024005698 W JP 2024005698W WO 2024185473 A1 WO2024185473 A1 WO 2024185473A1
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WIPO (PCT)
Prior art keywords
lead
semiconductor device
thickness direction
drain
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/005698
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English (en)
French (fr)
Japanese (ja)
Inventor
洋介 二宮
和樹 橋本
直明 鶴見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Filing date
Publication date
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Priority to JP2025505187A priority Critical patent/JPWO2024185473A1/ja
Publication of WO2024185473A1 publication Critical patent/WO2024185473A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • This disclosure relates to a semiconductor device.
  • Patent Document 1 discloses a semiconductor element using a nitride semiconductor.
  • the semiconductor element disclosed in this document comprises an element body made of a semiconductor, a nitride semiconductor layer laminated on the element body, and a number of electrodes. These electrodes include a source electrode, a drain electrode, and a gate electrode that are disposed on the nitride semiconductor layer.
  • the semiconductor element is configured as a GaN-HEMT (High Electron Mobility Transistor) element.
  • Semiconductor devices are used in a variety of electronic devices. Depending on the various applications, semiconductor devices need to be implemented in a variety of ways.
  • An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices.
  • an object of the present disclosure is to provide a semiconductor device that allows for greater freedom in mounting.
  • the semiconductor device provided by the first aspect of the present disclosure comprises a plurality of leads, a semiconductor element, and a sealing resin covering at least a portion of each of the plurality of leads and the semiconductor element.
  • the semiconductor element has a source electrode and a drain electrode arranged on a first side in the thickness direction.
  • the plurality of leads include an island lead.
  • the island lead has a main surface on which the semiconductor element is mounted and a back surface exposed from the sealing resin.
  • the island lead is electrically connected to the drain electrode.
  • the above configuration allows for greater freedom in mounting semiconductor devices.
  • FIG. 1 is a partial exploded perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 7 is a front view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 8 is a rear view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 1 is a partial exploded perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 9 is a left side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 10 is a right side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 11 is a cross-sectional view taken along line XI-XI in FIG.
  • FIG. 12 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG.
  • FIG. 14 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 15 is a cross-sectional view taken along line XV-XV in FIG.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG.
  • FIG. 17 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 18 is a circuit diagram showing an example of a DC/DC converter in which the semiconductor device according to the first embodiment of the present disclosure is used.
  • FIG. 19 is a plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 20 is a cross-sectional view showing a semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 21 is a cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 22 is a partially enlarged cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B.”
  • a surface A faces in direction B is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.
  • the z direction will be referred to as the "thickness direction z.”
  • a direction orthogonal to the thickness direction z will be referred to as the "first direction x.”
  • a direction orthogonal to the thickness direction z and the first direction x will be referred to as the "second direction y.”
  • the multiple leads 1 to 6 are intended to appropriately fulfill the functions of supporting the semiconductor element 8, forming a conductive path that is electrically connected to the semiconductor element 8, and the like.
  • the multiple leads 1 to 6 include metals such as Cu (copper), Ni (nickel), Fe (iron), etc., or alloys thereof.
  • the multiple leads 1 to 6 are formed, for example, by subjecting a metal plate material to a process selected from punching, bending, etching, etc.
  • a plating layer containing Ag (silver), Ni (nickel), Au (gold), etc. may be provided at appropriate locations on each of the multiple leads 1 to 6 as necessary.
  • the multiple leads 1 to 6 are described as a drain lead 1, a source lead 2, a drain terminal lead 3, a source terminal lead 4, a gate terminal lead 5, and an island lead 6. That is, the multiple leads 1 to 6 include a drain lead 1, a source lead 2, a drain terminal lead 3, a source terminal lead 4, a gate terminal lead 5, and an island lead 6. As described below, in this embodiment, the source terminal lead 4 and the island lead 6 are connected to each other. Depending on the conduction form of each lead 1 to 6, they may be configured as separate pieces, or any of the leads may be connected to each other.
  • the island lead 6 has a main surface 601, a back surface 602, a thick portion 61, a thin portion 62, and a plurality of extending portions 63.
  • the main surface 601 is a surface facing the z1 side of the thickness direction z, and in the illustrated example, is a flat surface perpendicular to the thickness direction z.
  • the island lead 6 may have, for example, a recess or a groove recessed from the main surface 601 as appropriate.
  • the back surface 602 is a surface facing the z2 side of the thickness direction z, and is facing the opposite side to the main surface 601. In the illustrated example, the back surface 602 is a flat surface perpendicular to the thickness direction z.
  • a plating layer including Ni (nickel), Ti (titanium), or the like may be provided on the back surface 602 as appropriate.
  • the thick portion 61 is a portion where the main surface 601 and the back surface 602 overlap when viewed in the thickness direction z, and in the illustrated example, is a rectangular portion when viewed in the thickness direction z.
  • the shape of the thick portion 61 is not limited in any way.
  • the thickness of the thick portion 61 in the thickness direction z is the distance between the main surface 601 and the back surface 602.
  • the thin portion 62 is a portion that overlaps with the main surface 601 when viewed in the thickness direction z, but does not overlap with the back surface 602, and in the illustrated example, is connected so as to extend from the thick portion 61 to both sides in the first direction x and both sides in the second direction y when viewed in the thickness direction z.
  • the thickness of the thin portion 62 in the thickness direction z is smaller than the distance between the main surface 601 and the back surface 602.
  • the thickness of the thick portion 61 and the thickness of the thin portion 62 are not limited in any way.
  • the thickness of the thick portion 61 is about 0.2 mm to 0.5 mm
  • the thickness of the thin portion 62 is 0.1 mm to 0.4 mm.
  • the portion of the thin portion 62 that extends from the thick portion 61 to the y1 side in the second direction y is larger than the portion that extends to the y2 side.
  • the multiple extensions 63 are portions extending from the ends of the thin-walled portion 62. In the illustrated example, the multiple extensions 63 extend from the thin-walled portion 62 on both sides in the first direction x.
  • the number of extensions 63 is not limited in any way, and may be multiple or may be one. In the illustrated example, two extensions 63 are provided on the x1 side of the first direction x, and two extensions 63 are provided on the x2 side.
  • the extensions 63 have end faces 631.
  • the end faces 631 are faces facing the opposite side to the thin-walled portion 62 in the first direction x, in other words, faces outward in the first direction x.
  • the illustrated end faces 631 are faces perpendicular to the first direction x.
  • the positions in the first direction x of the two end faces 631 located on the x1 side of the first direction x are the same.
  • the positions in the first direction x of the two end faces 631 located on the x2 side of the first direction x are the same.
  • Drain Lead 1 1, 3, 4, 11 to 14, and 16 the drain lead 1 is disposed on the z1 side in the thickness direction z of the drain terminal lead 3, the source terminal lead 4, the gate terminal lead 5, and the island lead 6.
  • the drain lead 1 of this embodiment has a main portion 11, a plurality of comb portions 12, a connecting portion 15, and a joint portion 16.
  • the main portion 11 is a plate-like portion along the xy plane, and in the illustrated example, is rectangular (or approximately rectangular) with the first direction x as the longitudinal direction.
  • the main portion 11 has a surface 111.
  • the surface 111 is a surface facing the z1 side in the thickness direction z. In the illustrated example, the surface 111 is a flat surface.
  • the multiple comb portions 12 extend from the main portion 11 toward the y2 side in the second direction y. There is no limitation on the number of comb portions 12, and in the illustrated example, three comb portions 12 are provided. The multiple comb portions 12 are arranged side by side in the first direction x.
  • the comb portion 12 is a portion located on the y2 side of the main portion 11 in the second direction y.
  • the shape of the comb portion 12 is not limited in any way, and in the illustrated example, it has a shape whose longitudinal direction is the second direction y when viewed in the thickness direction z.
  • the comb portion 12 is perpendicular to the thickness direction z.
  • the three comb portions 12 include a comb portion 12 whose length in the second direction y is different from that of the other comb portions 12.
  • the comb portion 12 located in the center in the first direction x has a longer length in the second direction y than the other comb portions 12.
  • the comb portions 12 located on both sides in the first direction x are positioned close to a gate electrode 83 described below.
  • the comb portion 12 located on the x2 side in the first direction x is positioned close to a gate electrode 83 and a wire 909 described below.
  • the multiple comb portions 12 may be of equal length.
  • the comb portion 12 has a surface 121.
  • the surface 121 is a surface facing the z1 side in the thickness direction z.
  • the surface 121 is a flat surface.
  • the surface 121 is at the same position in the thickness direction z as the surface 111.
  • the surfaces 121 and 111 are flush with each other.
  • the thickness t10 of the main portion 11 and the thickness t11 of the comb portion 12 are the same.
  • the thicknesses t10 and t11 are, for example, 150 ⁇ m or more and 500 ⁇ m or less, for example, about 250 ⁇ m.
  • the comb portion 12 has a tip surface 122.
  • the tip surface 122 is a surface of the comb portion 12 that is located on the y2 side in the second direction y.
  • the tip surface 122 is inclined so that it is located on the z1 side in the thickness direction z as it approaches the y2 side in the second direction y.
  • the joint 16 is connected to the end of the connecting portion 15 on the y1 side in the second direction y.
  • the joint 16 is aligned along the first direction x and the second direction y.
  • the joint 16 is rectangular with the first direction x as its longitudinal direction.
  • the center of the joint 16 in the first direction x is the same as the center of the connecting portion 15 in the first direction x.
  • the joint 16 is conductively joined to the drain terminal lead 3 via a fourth conductive joint 904.
  • the fourth conductive joint 904 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the comb portion 22 is a portion located on the y1 side of the main portion 21 in the second direction y.
  • the shape of the comb portion 22 is not limited in any way, and in the illustrated example, it has a shape whose longitudinal direction is the second direction y when viewed in the thickness direction z.
  • the main portion 21 is perpendicular to the thickness direction z.
  • the lengths of the two comb portions 22 in the second direction y are equal.
  • the lengths of the multiple comb portions 22 in the second direction y may be different from each other.
  • the comb portion 22 has a surface 221.
  • the surface 221 is a surface facing the z1 side in the thickness direction z.
  • the surface 221 is a flat surface.
  • the surface 221 is located on the z2 side in the thickness direction z of the surface 211.
  • the thickness t21 of the comb portion 22 is thinner than the thickness t20 of the main portion 21.
  • the thickness t21 is thinner than the thickness t11.
  • Such a source lead 2 can be formed, for example, by selectively etching the comb portion 22.
  • the sizes of the thickness t20 and the thickness t21 are not limited in any way.
  • the thickness t20 is, for example, 150 ⁇ m or more and 500 ⁇ m or less, for example, about 250 ⁇ m.
  • the thickness t21 is, for example, 40% or more and 80% or less of the thickness t20, for example, about 50%.
  • the connecting portion 25 is connected to the end of the main portion 21 on the y2 side in the second direction y, opposite the comb portion 22.
  • the connecting portion 25 extends from the main portion 21 to the z2 side in the thickness direction z.
  • the connecting portion 25 is inclined with respect to the thickness direction z.
  • the shape of the connecting portion 25 is not limited in any way, and in the illustrated example, it is a rectangle with the first direction x as its longitudinal direction.
  • the center of the connecting portion 25 in the first direction x is located on the x1 side in the first direction x with respect to the center of the main portion 21 in the first direction x.
  • the joint 26 is connected to the end of the connecting portion 25 on the y2 side in the second direction y.
  • the joint 26 is aligned along the first direction x and the second direction y.
  • the joint 26 is rectangular with the first direction x as its longitudinal direction.
  • the center of the joint 26 in the first direction x is the same as the center of the connecting portion 25 in the first direction x.
  • the joint 26 is conductively joined to the source terminal lead 4 via a fifth conductive joint 905.
  • the fifth conductive joint 905 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the main surface 301 is a surface facing the z1 side in the thickness direction z, and in the illustrated example, is a flat surface perpendicular to the thickness direction z.
  • the drain terminal lead 3 may have, for example, a recess or a groove recessed from the main surface 301 as appropriate.
  • the joint 16 is joined to the main surface 301 via the fourth conductive joint 904.
  • the back surface 302 is a surface facing the z2 side in the thickness direction z, and faces the opposite side to the main surface 301. In the illustrated example, the back surface 302 is a flat surface perpendicular to the thickness direction z.
  • a plating layer containing Ni (nickel), Ti (titanium), or the like may be provided on the back surface 302 as appropriate.
  • the main surface 301 is located at approximately the same position as the main surface 601 in the thickness direction z
  • the back surface 302 is located at approximately the same position as the back surface 602.
  • the thin portion 32 is connected to the thick portion 31 so as to extend from both sides of the first direction x and to the y2 side of the second direction y when viewed in the thickness direction z.
  • the thin portion 32 has a portion that is connected to the thick portion 31 so as to extend from the thick portion 31 to the y1 side of the second direction y when viewed in the thickness direction z, and this portion is sandwiched between the extension portions 33 in the first direction x.
  • the thickness of the thin portion 32 in the thickness direction z is smaller than the distance between the main surface 301 and the back surface 302.
  • the thicknesses of the thick portion 31 and the thin portion 32 are not limited in any way. In this embodiment, the thickness of the thick portion 31 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 32 is approximately the same as the thickness of the thin portion 62.
  • the multiple extension portions 33 are portions that extend from the end of the thick portion 31. In the illustrated example, the multiple extension portions 33 extend from the thick portion 31 toward the y1 side in the second direction y. There is no limitation on the number of extension portions 33, and there may be multiple extension portions 33 or there may be only one extension portion. In the illustrated example, four extension portions 33 are provided.
  • the extension portion 33 has an end face 331.
  • the end face 331 is a surface that faces the opposite side to the thick portion 31 in the second direction y, in other words, a surface that faces the y1 side, which is the outside, in the second direction y.
  • the illustrated end face 331 is a surface that is perpendicular to the second direction y.
  • the multiple end faces 331 are located at the same position in the second direction y.
  • the multiple extension portions 34 are portions extending from the end of the thin-walled portion 32. In the illustrated example, the multiple extension portions 34 extend from the thin-walled portion 32 in the first direction. There is no limitation on the number of extension portions 34, and there may be multiple extension portions 34 or just one extension portion. In the illustrated example, two extension portions 34 are provided.
  • the extension portion 34 has an end face 341.
  • the end face 341 is a surface facing the first direction x.
  • the illustrated end face 341 is a surface perpendicular to the first direction x.
  • the two end faces 341 face opposite each other in the first direction x.
  • the island lead 6 is electrically connected to the drain electrode 81 of the semiconductor element 8 via the drain lead 1 and the drain terminal lead 3.
  • Source terminal lead 4 1, 3 to 6, 11 and 13, the source terminal lead 4 is disposed on the y2 side in the second direction y with respect to the island lead 6.
  • the center of the source terminal lead 4 in the first direction x is located on the x1 side in the first direction x with respect to the center of the island lead 6 in the first direction x.
  • the source terminal lead 4 and the island lead 6 are separated from each other.
  • the source terminal lead 4 has a main surface 401, a back surface 402, a thick portion 41, a thin portion 42, and a plurality of extending portions 43 and 44.
  • the main surface 401 faces the z1 side in the thickness direction z, and in the illustrated example, is a flat surface perpendicular to the thickness direction z.
  • the source terminal lead 4 may have, for example, a recess or a groove recessed from the main surface 401 as appropriate.
  • the joint 26 is joined to the main surface 401 via a fifth conductive joint 905.
  • the back surface 402 faces the z2 side in the thickness direction z, and faces the opposite side to the main surface 401.
  • the back surface 402 is a flat surface perpendicular to the thickness direction z.
  • a plating layer containing Ni (nickel), Ti (titanium), or the like may be provided on the back surface 402 as appropriate.
  • the main surface 401 is located at approximately the same position as the main surface 601 in the thickness direction z
  • the back surface 402 is located at approximately the same position as the back surface 602.
  • the thick portion 41 is a portion where the main surface 401 and the back surface 402 overlap when viewed in the thickness direction z.
  • the thick portion 41 is a rectangular portion with the first direction x as the longitudinal direction when viewed in the thickness direction z.
  • the shape of the thick portion 41 is not limited in any way.
  • the thickness of the thick portion 41 in the thickness direction z is the distance between the main surface 401 and the back surface 402.
  • the dimension of the thick portion 41 in the first direction x is smaller than the dimension of the thick portion 31 in the first direction x.
  • the thin portion 42 is a portion that overlaps with the main surface 401 when viewed in the thickness direction z, but does not overlap with the back surface 402.
  • the thin portion 42 is connected so as to extend from the thick portion 41 to both sides in the first direction x and to the y1 side in the second direction y when viewed in the thickness direction z.
  • the thin portion 42 has a portion that is connected to the thick portion 41 so as to extend to the y2 side in the second direction y when viewed in the thickness direction z, and this portion is sandwiched between the extending portions 43 in the first direction x.
  • the thickness of the thin portion 42 in the thickness direction z is smaller than the distance between the main surface 401 and the back surface 402.
  • the thicknesses of the thick portion 41 and the thin portion 42 are not limited in any way. In this embodiment, the thickness of the thick portion 41 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 42 is approximately the same as the thickness of the thin portion 62.
  • the multiple extensions 43 are portions extending from the end of the thick portion 41.
  • the multiple extensions 43 extend from the thick portion 41 toward the y2 side in the second direction y.
  • the number of extensions 43 is not limited in any way, and may be multiple or may be one.
  • three extensions 43 are provided.
  • the positions of these three extensions 43 in the first direction x are approximately the same as the positions of the three extensions 33 located on the x1 side in the first direction x among the multiple extensions 33 in the first direction x.
  • the extension 43 has an end face 431.
  • the end face 431 is a face facing the opposite side to the thick portion 41 in the second direction y, in other words, a face facing the y2 side, which is the outside, in the second direction y.
  • the illustrated end face 431 is a face perpendicular to the second direction y.
  • the positions of the multiple end faces 431 in the second direction y are the same as each other.
  • Gate terminal lead 5 1, 3 to 6, and 15, the gate terminal lead 5 is disposed on the y2 side in the second direction y with respect to the island lead 6.
  • the center of the gate terminal lead 5 in the first direction x is located on the x2 side in the first direction x with respect to the center of the island lead 6 in the first direction x.
  • the gate terminal lead 5 is disposed on the x2 side in the first direction x with respect to the source terminal lead 4.
  • the gate terminal lead 5 has a main surface 501, a back surface 502, a thick portion 51, a thin portion 52, an extending portion 53, and an extending portion 54.
  • the main surface 501 faces the z1 side in the thickness direction z, and in the illustrated example, is a flat surface perpendicular to the thickness direction z.
  • the gate terminal lead 5 may have, for example, a recess or a groove recessed from the main surface 501 as appropriate.
  • a wire 909 is bonded to the main surface 501.
  • the back surface 502 faces the z2 side in the thickness direction z, and faces the opposite side to the main surface 501. In the illustrated example, the back surface 502 is a flat surface perpendicular to the thickness direction z.
  • a plating layer containing Ni (nickel), Ti (titanium), or the like may be provided on the back surface 502 as appropriate.
  • the main surface 501 is located at approximately the same position as the main surface 601 in the thickness direction z
  • the back surface 502 is located at approximately the same position as the back surface 602.
  • the thick portion 51 is a portion where the main surface 501 and the back surface 502 overlap when viewed in the thickness direction z.
  • the thick portion 51 is a rectangular portion when viewed in the thickness direction z.
  • the shape of the thick portion 51 is not limited in any way.
  • the thickness of the thick portion 51 in the thickness direction z is the distance between the main surface 501 and the back surface 502.
  • the dimension of the thick portion 51 in the first direction x is smaller than the dimensions of the thick portion 31 and the thick portion 41 in the first direction x.
  • the thin portion 32 is a portion that overlaps with the main surface 301 when viewed in the thickness direction z, but does not overlap with the back surface 302.
  • the thin portion 32 is connected so as to extend from the thick portion 51 to both sides in the first direction x and to the y1 side in the second direction y when viewed in the thickness direction z.
  • the thickness of the thin portion 52 in the thickness direction z is smaller than the distance between the main surface 501 and the back surface 502.
  • the thickness of the thick portion 51 and the thin portion 52 are no limitations.
  • the thickness of the thick portion 51 is approximately the same as the thickness of the thick portion 61
  • the thickness of the thin portion 52 is approximately the same as the thickness of the thin portion 62.
  • the extension portion 53 is a portion extending from the end of the thick portion 51. In the illustrated example, the extension portion 53 extends from the thick portion 51 toward the y2 side in the second direction y. There is no limitation on the number of extension portions 53, and there may be multiple extension portions 53 or there may be only one extension portion. In the illustrated example, one extension portion 53 is provided. The position of the extension portion 53 in the first direction x is approximately the same as the position in the first direction x of the extension portion 33 located closest to the x2 side in the first direction x among the multiple extension portions 33.
  • the extension portion 53 has an end face 531.
  • the end face 531 is a face facing the opposite side to the thick portion 51 in the second direction y, in other words, a face facing the y2 side, which is the outside, in the second direction y.
  • the illustrated end face 531 is a face perpendicular to the second direction y.
  • the position of the end face 531 in the second direction y is the same as the multiple end faces 431.
  • the extension portion 54 is a portion extending from the end of the thin portion 52. In the illustrated example, the extension portion 54 extends from the thin portion 52 toward the x2 side in the first direction x. There is no limitation on the number of extension portions 54, and there may be multiple extension portions 54 or there may be only one extension portion. In the illustrated example, one extension portion 54 is provided.
  • the position of the extension portion 54 in the second direction y is approximately the same as the position of the extension portion 44 in the second direction y.
  • the extension portion 54 has an end face 541.
  • the end face 541 is a face facing the opposite side to the thick portion 51 in the first direction x, in other words, a face facing the x2 side, which is the outside, in the first direction x.
  • the illustrated end face 541 is a face perpendicular to the first direction x.
  • the position of the end face 541 in the second direction y is the same as the end face 341 and the multiple end faces 631.
  • the heat dissipation member 7 is a member that functions to dissipate heat generated from the semiconductor element 8 to the outside of the semiconductor device A1.
  • the material of the heat dissipation member 7 is not limited in any way and includes, for example, metals such as Cu (copper), Ni (nickel), Fe (iron), etc., or alloys thereof.
  • the heat dissipation member 7 is formed, for example, by subjecting a metal plate material to a process selected from punching, bending, etching, etc.
  • a plating layer containing Ag (silver), Ni (nickel), Au (gold), etc. may be provided at appropriate locations of the heat dissipation member 7 as necessary.
  • the shape of the heat dissipation member 7 is not limited in any way. As shown in Figures 1 to 3 and 11 to 17, in this embodiment, the heat dissipation member 7 has a main portion 71, a support portion 72, and a support portion 73.
  • the main portion 71 is disposed on the z1 side of the semiconductor element 8 in the z direction.
  • the shape of the main portion 71 is not limited in any way, and in the illustrated example, it is a flat portion along the first direction x and the second direction y.
  • the main portion 71 overlaps with the semiconductor element 8, and in the illustrated example, it overlaps with most of the semiconductor element 8.
  • the main portion 71 does not overlap with the gate electrode 83 and the wire 909.
  • the main portion 71 overlaps with the multiple comb portions 12 and the multiple comb portions 22.
  • the main portion 71 has a main heat dissipation surface 701 and a back heat dissipation surface 702.
  • the main heat dissipation surface 701 is a surface facing the z1 side in the z direction. In the illustrated example, the main heat dissipation surface 701 is a flat surface.
  • the back heat dissipation surface 702 is a surface facing the z2 side in the z direction. In the illustrated example, the back heat dissipation surface 702 is a flat surface.
  • the support portion 72 is connected to the end of the main portion 71 on the x2 side in the first direction x, and extends to the x2 side in the z direction.
  • the support portion 72 has a shape whose longitudinal direction is the second direction y. In the illustrated example, a part of the support portion 72 protrudes from the main portion 71 on the y2 side in the second direction y.
  • the support portion 73 is connected to the end portion of the main portion 71 on the x1 side in the first direction x, and extends to the x2 side in the z direction.
  • the support portion 72 has a shape whose longitudinal direction is in the second direction y.
  • the size in the second direction y of the support portion 73 is the same as the size in the second direction y of the support portion 72, and is smaller than the size in the second direction y of the end portion of the main portion 71 on the x1 side in the first direction x.
  • Sixth conductive joint portion 906 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the heat dissipating back surface 702 is joined to the front surface 121 of the multiple comb portions 12 via the seventh conductive joint 907.
  • the seventh conductive joint 907 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the gap g1 between the front surface 121 and the heat dissipating main surface 701 is filled by the seventh conductive joint 907.
  • the size of the gap g1 is not limited in any way and is, for example, 10 ⁇ m or more and 30 ⁇ m or less.
  • the heat dissipating back surface 702 is joined to the main portion 11 via the seventh conductive joint 907. Depending on the shape of the main portion 71, etc., the heat dissipating back surface 702 may not be joined to the main portion 11.
  • a portion of the sealing resin 9 is filled between the heat dissipating back surface 702 and the surfaces 221 of the multiple comb portions 22. This insulates the heat dissipating member 7 from the multiple comb portions 22.
  • the main portion 71 does not cover the main portion 21 when viewed from the z direction. Therefore, even if the thickness t20 of the main portion 21 is the same as the thickness t10 and the thickness t11, the main portion 21 is not joined to or in contact with the main portion 71 of the heat dissipating member 7.
  • the semiconductor element 8 is an element that exerts the electrical function of the semiconductor device A1.
  • the specific configuration of the semiconductor element 8 is not limited in any way, and in this embodiment, the semiconductor element 8 is a transistor using a nitride semiconductor, more specifically, a GaN-HEMT (High Electron Mobility Transistor) element using gallium nitride (GaN).
  • the semiconductor element 8 is not limited to one using a nitride semiconductor, and other semiconductors such as silicon (Si) and silicon carbide (SiC) may be used.
  • the semiconductor element 8 is not limited to a HEMT, and may be other transistors such as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 8 is mounted on the thick portion 61 of the island lead 6. As shown in FIG. 1, FIG. 3 to FIG. 5, and FIG. 11 to FIG. 16, the semiconductor element 8 has an element body 80, a plurality of drain electrodes 81, a plurality of source electrodes 82, and a gate electrode 83.
  • the element body 80 is, for example, a portion in which a substrate layer, a buffer layer, and a nitride semiconductor layer are stacked.
  • the element body 80 has an element main surface 801 and an element back surface 802.
  • the element main surface 801 is a surface facing the z1 side in the thickness direction z.
  • the element back surface 802 is a surface facing the z2 side in the thickness direction z, and faces the opposite side to the element main surface 801.
  • a metal layer 89 is provided on the element back surface 802. This metal layer 89 and the main surface 601 of the island lead 6 are joined by a first conductive joint 901.
  • the first conductive joint 901 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the metal layer 89 is provided for joining by the first conductive joint 901, but the metal layer 89 may not be provided. Alternatively, the metal layer 89 may be configured to have the same potential as, for example, the source electrode 82, etc.
  • the semiconductor element 8 is positioned so that it overlaps a portion of the thick portion 61 and a portion of the thin portion 62 of the island lead 6 when viewed in the thickness direction z.
  • the element body 80 may further include a high-resistance layer 88.
  • the high-resistance layer 88 is interposed, for example, between the substrate layer and the nitride semiconductor layer. By providing the high-resistance layer 88, at least the metal layer 89 is substantially insulated from the drain electrode 81 and the source electrode 82.
  • the multiple drain electrodes 81, the multiple source electrodes 82, and the gate electrode 83 are arranged on the element main surface 801.
  • the number of the multiple drain electrodes 81 and the multiple source electrodes 82 is not limited in any way. In the illustrated example, three drain electrodes 81 and two source electrodes 82 are provided.
  • the number of the multiple drain electrodes 81 is the same as the number of the multiple comb portions 12, and the number of the multiple source electrodes 82 is the same as the number of the multiple comb portions 22.
  • the multiple drain electrodes 81 and the multiple source electrodes 82 are arranged alternately in the first direction x.
  • the shapes of the drain electrodes 81 and the source electrodes 82 are not limited in any way, and in the illustrated example, they are shaped such that the second direction y is the longitudinal direction, more specifically, they are rectangular.
  • the multiple comb portions 12 of the drain lead 1 are individually conductively joined to the multiple drain electrodes 81 via second conductive joints 902.
  • the second conductive joints 902 are, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the multiple comb portions 22 of the source lead 2 are individually conductively joined to the multiple source electrodes 82 via third conductive joints 903.
  • the third conductive joints 903 are, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.
  • the number of gate electrodes 83 is not limited, and may be one or more. In the illustrated example, two gate electrodes 83 are provided. The two gate electrodes 83 are arranged apart in the first direction x. A wire 909 is joined to the gate electrode 83 arranged on the x2 side of the first direction x, and is electrically connected to the gate terminal lead 5 via the wire 909. Instead of the wire 909, a conductive member made of a metal plate material may be used to electrically connect the gate electrode 83 and the gate terminal lead 5. In the illustrated example, the gate electrode 83 on the x1 side of the first direction x is not electrically used.
  • the sealing resin 9 covers a portion of each of the leads 1 to 6, a portion of the heat dissipation member 7, the semiconductor element 8, and the wires 909, and is made of an insulating material such as an epoxy resin. As shown in Figures 2 to 16, the sealing resin 9 has a first resin surface 91, a second resin surface 92, a third resin surface 93, a fourth resin surface 94, a fifth resin surface 95, and a sixth resin surface 96, and is in the shape of a rectangular parallelepiped.
  • the resin first surface 91 is a surface facing the z1 side in the thickness direction z.
  • the resin first surface 91 is a plane perpendicular to the thickness direction z.
  • the resin second surface 92 is a surface facing the z2 side in the thickness direction z.
  • the resin second surface 92 is a plane perpendicular to the thickness direction z.
  • the resin third surface 93 is a surface facing the y1 side in the second direction y.
  • the resin third surface 93 is a plane perpendicular to the second direction y.
  • the resin fourth surface 94 is a surface facing the y2 side in the second direction y.
  • the resin fourth surface 94 is a plane perpendicular to the second direction y.
  • the resin fifth surface 95 is a surface facing the x1 side in the first direction x.
  • the resin fifth surface 95 is a plane perpendicular to the first direction x.
  • the sixth resin surface 96 is a surface facing the x2 side in the first direction x.
  • the sixth resin surface 96 is a plane perpendicular to the first direction x.
  • the main heat dissipation surface 701 of the heat dissipation member 7 is exposed on the z1 side in the thickness direction z from the first resin surface 91.
  • the first resin surface 91 and the main heat dissipation surface 701 are flush with each other.
  • the main heat dissipation surface 701 may protrude slightly from the first resin surface 91.
  • the back surface 602 of the island lead 6, the back surface 302 of the drain terminal lead 3, the back surface 402 of the source terminal lead 4, and the back surface 502 of the gate terminal lead 5 are exposed on the z2 side in the thickness direction z.
  • the resin second surface 92, the back surface 602 of the island lead 6, the back surface 302 of the drain terminal lead 3, the back surface 402 of the source terminal lead 4, and the back surface 502 of the gate terminal lead 5 are flush with one another. All or any of the back surface 602 of the island lead 6, the back surface 302 of the drain terminal lead 3, the back surface 402 of the source terminal lead 4, and the back surface 502 of the gate terminal lead 5 may protrude slightly from the resin second surface 92.
  • the multiple end faces 431 of the source terminal lead 4 and the end face 531 of the gate terminal lead 5 are exposed on the y2 side in the second direction y.
  • the fourth resin surface 94, the multiple end faces 431 of the source terminal lead 4, and the end face 531 of the gate terminal lead 5 are flush with one another. All or any of the multiple end faces 431 of the source terminal lead 4 and the end face 531 of the gate terminal lead 5 may protrude slightly from the fourth resin surface 94.
  • the end face 341 of the drain terminal lead 3, the end face 441 of the source terminal lead 4, and the multiple end faces 631 of the island lead 6 are exposed on the x1 side of the first direction x.
  • the fifth resin surface 95, the end face 341 of the drain terminal lead 3, the end face 441 of the source terminal lead 4, and the multiple end faces 631 of the island lead 6 are flush with one another. All or any of the end face 341 of the drain terminal lead 3, the end face 441 of the source terminal lead 4, and the multiple end faces 631 of the island lead 6 may protrude slightly from the fifth resin surface 95.
  • the end face 341 of the drain terminal lead 3, the end face 541 of the gate terminal lead 5, and the multiple end faces 631 of the island lead 6 are exposed on the x2 side of the first direction x.
  • the sixth resin surface 96, the end face 341 of the drain terminal lead 3, the end face 541 of the gate terminal lead 5, and the multiple end faces 631 of the island lead 6 are flush with one another. All or any of the end face 341 of the drain terminal lead 3, the end face 541 of the gate terminal lead 5, and the multiple end faces 631 of the island lead 6 may protrude slightly from the sixth resin surface 96.
  • the semiconductor device A1 is mounted on a circuit board (not shown) or the like, with the back surfaces 302, 402, and 502 exposed from the second resin surface 92 of the sealing resin 9 serving as mounting terminals. That is, the mounting surface of the semiconductor device A1 is the z2 side opposite the z1 side, which is the side to which the element main surface 801 of the semiconductor element 8 faces in the thickness direction z.
  • the back surface 602 may be used as a heat dissipation surface for dissipating heat from the semiconductor element 8.
  • FIG. 18 is a circuit diagram showing an example of a DC/DC converter in which the semiconductor device A1 is used.
  • the DC/DC converter B1 in the figure includes the semiconductor device A1, a power supply b11, a controller b12, an inductor b13, a capacitor b14, a load b15, and a semiconductor device b20.
  • the power supply b11 is a DC power supply.
  • the controller b12 includes, for example, gate controllers for the semiconductor device A1 and the semiconductor device b20.
  • the semiconductor device A1 is provided as a high-side switching device.
  • the semiconductor device b20 is provided as a low-side switching device.
  • Inductor b13 is connected to a switching node which is the connection point between the source electrode 82 of semiconductor device A1 and the drain electrode of semiconductor device b20.
  • Capacitor b14 is connected in parallel with load b15.
  • the drain electrode 81 of the semiconductor device A1 and the source electrode of the semiconductor device b20 are connected to a power supply node that is conductive to a power supply b11.
  • the switching node has a larger voltage fluctuation than the power supply node and is more likely to generate noise.
  • the circuit board (not shown) used in the DC/DC converter B1 it is not preferable to increase the area of the portion of the wiring pattern that is conductive to the switching node.
  • the portion of the wiring pattern that is conductive to the power supply node has a smaller voltage fluctuation than the switching node and is less likely to generate noise. For this reason, the area of the portion of the wiring pattern that is conductive to the power supply node can be increased.
  • the island lead 6 of the semiconductor device A1 is connected to a portion of the wiring pattern that is conductive to the power supply node. This allows heat from the semiconductor element 8 to be dissipated more efficiently via the island lead 6. It is preferable that the semiconductor device b20 is configured such that a member equivalent to the island lead 6 in the semiconductor device A1 is conductive to the source electrode.
  • the island lead 6 is electrically connected to the drain electrode 81 of the semiconductor element 8. This allows for greater freedom in mounting, for example when the semiconductor device A1 is used in the DC/DC converter B1 shown in FIG. 18, by joining the island lead 6 to a portion of the wiring pattern that has a larger surface area. When the semiconductor device A1 is used in the DC/DC converter B1, heat dissipation from the semiconductor device A1 can be promoted.
  • the island lead 6 is electrically connected to the drain electrode 81 via the drain lead 1 and the drain terminal lead 3.
  • the island lead 6 is disposed on the z2 side of the semiconductor element 8 in the thickness direction z, and the drain electrode 81 is disposed in a position on the z1 side of the semiconductor element 8 in the thickness direction z.
  • the drain terminal lead 3 and the island lead 6 are connected by a relay portion 39.
  • the size of the relay portion 39 in the first direction x is smaller than that of the drain terminal lead 3 and the island lead 6. This can increase the flow of the resin material, for example, when molding the sealing resin 9.
  • the element body 80 of the semiconductor element 8 has a high resistance layer 88. This makes it possible to prevent, for example, unintended microcracks from occurring in the element body 80 during the manufacturing process of the semiconductor element 8, which would cause the metal layer 89 to become conductive with the drain electrode 81.
  • the heat dissipation member 7 is joined to the island lead 6 and is exposed from the sealing resin 9. This allows the heat generated by the semiconductor element 8 to be dissipated more efficiently to the outside of the semiconductor device A1 via the island lead 6 and the heat dissipation member 7.
  • the heat dissipation member 7 has a main portion 71, a support portion 72, and a support portion 73.
  • the main portion 71 overlaps with the semiconductor element 8 when viewed in the thickness direction z.
  • the support portions 72 and 73 are disposed on both sides of the semiconductor element 8 in a first direction x perpendicular to the thickness direction z.
  • the main heat dissipation surface 701 is flush with the first resin surface 91. This makes it possible to prevent the first resin surface 91 from interfering when the main heat dissipation surface 701 is pressed against a heat sink (not shown) or the like outside the semiconductor device A1.
  • the surfaces 121 of the comb portions 12 are joined to the heat dissipating back surface 702 of the heat dissipating member 7.
  • the surfaces 221 of the comb portions 22 are located on the z2 side in the thickness direction z from the surface 121.
  • a portion of the sealing resin 9 is filled between the surface 221 and the heat dissipating back surface 702. This makes it possible to more reliably insulate the heat dissipating member 7 from the source lead 2 while joining the heat dissipating member 7 to the drain lead 1. This therefore makes it possible to increase the conductive path that is conductive to the drain electrode 81 and the heat transfer path that dissipates heat from the semiconductor element 8 to the outside of the semiconductor device A1.
  • First Modification of First Embodiment 19 shows a first modified example of the semiconductor device A11.
  • the connection between the drain terminal lead 3 and the island lead 6 is different from that of the semiconductor device A1 described above.
  • the drain terminal lead 3 and the island lead 6 are configured as one lead when viewed in the thickness direction z. That is, while in the semiconductor device A1, the drain terminal lead 3 and the island lead 6 are connected via multiple relay portions 39, in this modified example, the drain terminal lead 3 and the island lead 6 are formed integrally without going through small relay portions such as the relay portions 39.
  • This modified example also increases the degree of freedom in mounting the semiconductor device A11.
  • the specific structure in which the drain terminal lead 3 and the island lead 6 are connected is not limited in any way. With the semiconductor device A11, the resistance between the drain terminal lead 3 and the island lead 6 can be reduced.
  • Second embodiment: 20 shows a semiconductor device according to a second embodiment of the present disclosure.
  • a semiconductor device A2 of this embodiment differs from the above-described embodiments in the configuration of a heat dissipation member 7.
  • the heat dissipation member 7 of this embodiment has a main portion 71, but does not have a support portion 72 and a support portion 72.
  • the heat dissipation back surface 702 of the main portion 71 is joined to the front surface 121 via a seventh conductive joint 907, so that the heat dissipation member 7 is electrically connected to the drain electrode 81 of the semiconductor element 8.
  • the heat dissipation member 7 is not joined to the island lead 6.
  • This embodiment also increases the degree of freedom in mounting the semiconductor device A2. As can be seen from this embodiment, the heat dissipation member 7 does not have to be joined to the island lead 6.
  • Third embodiment 21 and 22 show a semiconductor device according to a third embodiment of the present disclosure.
  • a semiconductor device A3 of this embodiment differs from the above-described embodiments in the configuration of a heat dissipation member 7.
  • the heat dissipation back surface 702 is not joined to either the front surface 121 or the front surface 221.
  • a portion of the sealing resin 9 is filled between the heat dissipation back surface 702 and the front surface 121 and the front surface 221.
  • This embodiment also increases the degree of freedom in mounting the semiconductor device A3. As can be seen from this embodiment, the heat dissipation member 7 does not have to be joined to the drain lead 1 and the source lead 2.
  • Fourth embodiment 23 and 24 show a semiconductor device according to a third embodiment of the present disclosure.
  • the semiconductor device A4 of this embodiment does not include the heat dissipation component 7 in the above-mentioned embodiment.
  • Both the surface 121 and the surface 221 are covered with the sealing resin 9.
  • This embodiment also increases the degree of freedom in mounting the semiconductor device A4.
  • the semiconductor device disclosed herein does not need to include the heat dissipation member 7.
  • First modified example of the fourth embodiment: 25 shows a first modified example of the semiconductor device A4.
  • the surfaces 121 of the multiple comb portions 12 are exposed from the sealing resin 9.
  • the surfaces 121 are flush with the first resin surface 91 of the sealing resin 9.
  • the surfaces 221 of the multiple comb portions 22 are covered with the sealing resin 9.
  • the surface 121 is located on the z1 side of the surface 221 in the thickness direction z.
  • This modified example also increases the degree of freedom in mounting the semiconductor device A41. Because the surface 121 is exposed from the sealing resin 9, heat dissipation from the semiconductor element 8 can be promoted.
  • the semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
  • the present disclosure includes the embodiments described in the following appendix.
  • Appendix 1 Multiple leads and A semiconductor element; a sealing resin that covers at least a portion of each of the plurality of leads and the semiconductor element,
  • the semiconductor element has a source electrode and a drain electrode disposed on a first side in a thickness direction, the plurality of leads includes an island lead; the island lead has a main surface on which the semiconductor element is mounted and a back surface exposed from the sealing resin, and is electrically connected to the drain electrode.
  • Appendix 2. the plurality of leads includes a drain lead joined to the drain electrode; 2. The semiconductor device according to claim 1, wherein the island lead is electrically connected to the drain electrode via the drain lead.
  • Appendix 3. the plurality of leads includes a drain terminal lead joined to the drain lead; 3.
  • the semiconductor device according to claim 2 wherein the island lead and the drain terminal lead are connected to each other. Appendix 4. 4. The semiconductor device according to claim 3, wherein the drain terminal lead has a relay portion connected to the island lead. Appendix 5. 4. The semiconductor device according to claim 3, wherein the island lead and the drain terminal lead are configured as a single lead when viewed in the thickness direction. Appendix 6. 6. The semiconductor device according to claim 3, wherein the drain terminal lead is exposed from the sealing resin. Appendix 7. 7. The semiconductor device according to claim 2, wherein the semiconductor element has a high resistance layer located on a second side in the thickness direction with respect to the source electrode. Appendix 8. 8. 8.
  • the semiconductor device further comprising a heat dissipation member joined to the island lead and exposed from the sealing resin on the first side in the thickness direction with respect to the semiconductor element.
  • the heat dissipation member has a main portion located on the first side in the thickness direction with respect to the semiconductor element, and at least one support portion extending from the main portion to a second side in the thickness direction, 9.
  • the semiconductor device according to claim 8, wherein the support portion is joined to the island lead.
  • Appendix 10. 10 The semiconductor device according to claim 9, wherein the main portion overlaps the semiconductor element when viewed in the thickness direction. Appendix 11.
  • the at least one support portion includes two support portions located on both sides of the semiconductor element in a first direction perpendicular to the thickness direction.
  • the sealing resin has a resin first surface facing the first side in the thickness direction
  • the main portion has a heat dissipation main surface facing the first side in the thickness direction, 12.
  • the plurality of leads includes a source lead joined to the source electrode; the drain lead has a first comb portion joined to the drain electrode and having a first surface facing the first side in the thickness direction; the source lead has a second comb portion joined to the source electrode and having a second surface facing the first side in the thickness direction; the first surface is located closer to the first side in the thickness direction than the second surface, 13.
  • the plurality of leads includes a source lead joined to the source electrode; the drain lead has a first comb portion joined to the drain electrode and having a first surface facing the first side in the thickness direction; the source lead has a second comb portion joined to the source electrode and having a second surface facing the first side in the thickness direction; the first surface is located closer to the first side in the thickness direction than the second surface, 8.
  • the first comb portion has a bent shape when viewed in a direction perpendicular to the thickness direction.
  • Appendix 17. 17 The semiconductor device according to claim 1, wherein the semiconductor element includes GaN.

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222781A (ja) * 2012-04-16 2013-10-28 Sharp Corp 半導体装置のデバイス実装構造
JP2015056564A (ja) * 2013-09-12 2015-03-23 古河電気工業株式会社 半導体装置及びその製造方法
US20170179271A1 (en) * 2015-12-21 2017-06-22 Toshiba Corporation High electron mobility transistor (hemt)
US20200357727A1 (en) * 2019-05-12 2020-11-12 Zhanming LI Packaging for Lateral High Voltage GaN Power Devices
JP2020188085A (ja) * 2019-05-13 2020-11-19 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222781A (ja) * 2012-04-16 2013-10-28 Sharp Corp 半導体装置のデバイス実装構造
JP2015056564A (ja) * 2013-09-12 2015-03-23 古河電気工業株式会社 半導体装置及びその製造方法
US20170179271A1 (en) * 2015-12-21 2017-06-22 Toshiba Corporation High electron mobility transistor (hemt)
US20200357727A1 (en) * 2019-05-12 2020-11-12 Zhanming LI Packaging for Lateral High Voltage GaN Power Devices
JP2020188085A (ja) * 2019-05-13 2020-11-19 ローム株式会社 半導体装置

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