JPWO2024185473A1 - - Google Patents
Info
- Publication number
- JPWO2024185473A1 JPWO2024185473A1 JP2025505187A JP2025505187A JPWO2024185473A1 JP WO2024185473 A1 JPWO2024185473 A1 JP WO2024185473A1 JP 2025505187 A JP2025505187 A JP 2025505187A JP 2025505187 A JP2025505187 A JP 2025505187A JP WO2024185473 A1 JPWO2024185473 A1 JP WO2024185473A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023032973 | 2023-03-03 | ||
| PCT/JP2024/005698 WO2024185473A1 (ja) | 2023-03-03 | 2024-02-19 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024185473A1 true JPWO2024185473A1 (https=) | 2024-09-12 |
| JPWO2024185473A5 JPWO2024185473A5 (https=) | 2025-11-18 |
Family
ID=92675106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025505187A Pending JPWO2024185473A1 (https=) | 2023-03-03 | 2024-02-19 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024185473A1 (https=) |
| WO (1) | WO2024185473A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013222781A (ja) * | 2012-04-16 | 2013-10-28 | Sharp Corp | 半導体装置のデバイス実装構造 |
| JP2015056564A (ja) * | 2013-09-12 | 2015-03-23 | 古河電気工業株式会社 | 半導体装置及びその製造方法 |
| US9735240B2 (en) * | 2015-12-21 | 2017-08-15 | Toshiba Corporation | High electron mobility transistor (HEMT) |
| US11107755B2 (en) * | 2019-05-12 | 2021-08-31 | Zhanming LI | Packaging for lateral high voltage GaN power devices |
| JP7312604B2 (ja) * | 2019-05-13 | 2023-07-21 | ローム株式会社 | 半導体装置 |
-
2024
- 2024-02-19 WO PCT/JP2024/005698 patent/WO2024185473A1/ja not_active Ceased
- 2024-02-19 JP JP2025505187A patent/JPWO2024185473A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024185473A1 (ja) | 2024-09-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250827 |