WO2024181042A1 - コンデンサアレイ - Google Patents

コンデンサアレイ Download PDF

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Publication number
WO2024181042A1
WO2024181042A1 PCT/JP2024/003670 JP2024003670W WO2024181042A1 WO 2024181042 A1 WO2024181042 A1 WO 2024181042A1 JP 2024003670 W JP2024003670 W JP 2024003670W WO 2024181042 A1 WO2024181042 A1 WO 2024181042A1
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WIPO (PCT)
Prior art keywords
unit
conductor
center
capacitor
capacitor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/003670
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English (en)
French (fr)
Japanese (ja)
Inventor
剛史 古川
▲高▼志 姫田
修平 山田
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to CN202480003483.2A priority Critical patent/CN119768882A/zh
Priority to JP2025503698A priority patent/JP7722616B2/ja
Priority to TW113102207A priority patent/TWI895940B/zh
Publication of WO2024181042A1 publication Critical patent/WO2024181042A1/ja
Priority to US19/007,888 priority patent/US20250166931A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other

Definitions

  • the present invention relates to a capacitor array.
  • Patent Document 1 discloses a capacitor array including a plurality of solid electrolytic capacitor elements formed by dividing a single solid electrolytic capacitor sheet, a sheet-like first sealing layer, and a sheet-like second sealing layer.
  • the solid electrolytic capacitor sheet includes an anode plate made of a valve metal, a porous layer provided on at least one main surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, and has a first main surface and a second main surface opposed in the thickness direction.
  • the first main surface side of each of the plurality of solid electrolytic capacitor elements is disposed on the first sealing layer.
  • the second sealing layer is disposed so as to cover the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side.
  • the solid electrolytic capacitor elements are divided by a slit-shaped sheet removal portion.
  • Patent document 1 describes that it is preferable to provide a through electrode that penetrates the first sealing layer or the second sealing layer in the thickness direction, and to connect the anode plate or the cathode layer to the external electrode via the through electrode.
  • FIG. 22 of Patent Document 1 shows a structure in which a capacitor unit is formed by a capacitor effective portion existing around a pair of through electrodes (hereinafter referred to as through conductors), and the capacitor units are repeatedly arranged in a group.
  • through conductors a capacitor effective portion existing around a pair of through electrodes
  • the present invention has been made to solve the above problems, and aims to provide a capacitor array that has a large overall capacitance relative to the amount of conductor in the through conductor required depending on the amount of current.
  • the capacitor array of the present invention includes a plurality of capacitor units arranged in a planar direction.
  • Each of the capacitor units includes a capacitor element, a first through conductor, and a second through conductor.
  • the capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer.
  • the first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction, via the dielectric layer.
  • the first through conductor is provided on at least an inner wall surface of a first through hole penetrating the capacitor element in the thickness direction, and is electrically connected to the first electrode layer.
  • the second through conductor is provided on at least an inner wall surface of a second through hole penetrating the capacitor element in the thickness direction, and is electrically connected to the second electrode layer.
  • the area of the capacitor unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent among the capacitor units.
  • Condition 2 In a plan view from the thickness direction of the capacitor array, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent between the virtual units.
  • Condition 3 In the virtual unit, an area of the first through conductor in the first through hole is s th1 , and an area of the second through conductor in the second through hole is s th2 .
  • Condition 4 The value of (s th1 +s th2 ) ⁇ n is equal to the value of (S TH1 +S TH2 ) ⁇ N.
  • an effective overall capacitance corresponding to the capacitance of the total area of the capacitor units is larger than a virtual overall capacitance obtained by multiplying the total number n of the virtual units corresponding to the center-to-center distance p when the capacitance C unit per unit is at a maximum value by the maximum value of the capacitance C unit per unit.
  • the present invention makes it possible to provide a capacitor array with a large overall capacitance relative to the amount of conductor required for the amount of current.
  • FIG. 1 is a plan view showing a schematic diagram of an example of a capacitor array according to the present invention.
  • FIG. 2 is an enlarged plan view of a portion indicated by II in the capacitor array shown in FIG.
  • FIG. 3 is an example of a cross-sectional view taken along line III-III of the capacitor array shown in FIG.
  • FIG. 4 is an example of a plan view taken along line IV-IV of the capacitor array shown in FIG.
  • FIG. 5 is an example of a graph showing the correlation of the capacitance C unit per unit or the virtual total capacitance with respect to the center-to-center distance p between the first through conductor and the second through conductor.
  • FIG. 1 is a plan view showing a schematic diagram of an example of a capacitor array according to the present invention.
  • FIG. 2 is an enlarged plan view of a portion indicated by II in the capacitor array shown in FIG.
  • FIG. 3 is an example of a cross-sectional view taken along line III-III of the capacitor array shown in FIG.
  • FIG. 6 is a plan view showing a schematic example of an arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention.
  • FIG. 7 is a plan view for explaining an example of the arrangement shown in FIG.
  • FIG. 8 is a plan view for explaining another example of the arrangement shown in FIG.
  • FIG. 9 is a plan view showing a schematic diagram of another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention.
  • FIG. 10 is a plan view for explaining an example of the arrangement shown in FIG.
  • FIG. 11 is a plan view for explaining another example of the arrangement shown in FIG.
  • FIG. 12 is a plan view showing an example of the capacitor unit in the arrangement shown in FIG.
  • FIG. 13 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG.
  • the capacitor array of the present invention is described below. Note that the present invention is not limited to the configuration below, and may be modified as appropriate without changing the gist of the present invention. In addition, a combination of multiple individual preferred configurations described below also constitutes the present invention.
  • terms indicating the relationship between elements e.g., "perpendicular,” “parallel,” “orthogonal,” etc.
  • terms indicating the shapes of elements are not expressions that express only a strict meaning, but are expressions that include a range of substantial equivalence, for example, differences of about a few percent.
  • FIG. 1 is a plan view showing a schematic example of a capacitor array according to the present invention.
  • FIG. 2 is an enlarged plan view of the portion indicated by II in the capacitor array shown in FIG. 1.
  • the capacitor array 1 shown in FIG. 1 comprises multiple capacitor units 1U (see FIG. 2) arranged in a planar direction.
  • the number of capacitor units 1U included in the capacitor array 1 is not particularly limited as long as it is two or more.
  • each capacitor unit 1U includes a capacitor element 10, a first through conductor 20A, and a second through conductor 20B.
  • the configuration of the capacitor element 10 is the same between the capacitor units 1U.
  • Adjacent capacitor elements 10 between capacitor units 1U may or may not be separated by a through groove. When adjacent capacitor elements 10 between capacitor units 1U are separated by a through groove, adjacent capacitor elements 10 only need to be physically separated. Therefore, adjacent capacitor elements 10 may be electrically separated or electrically connected. For example, a mixture of sets of electrically separated capacitor elements 10 and sets of electrically connected capacitor elements 10 may be present.
  • FIG. 3 is an example of a cross-sectional view taken along line III-III of the capacitor array shown in FIG. 2.
  • FIG. 1 is an example of a plan view taken along line I-I of the capacitor array shown in FIG. 3.
  • the capacitor array 1 further includes a sealing layer 30, a first conductor wiring layer 40A, and a second conductor wiring layer 40B in addition to the capacitor unit 1U (see FIG. 2) including the capacitor element 10, the first through conductor 20A, and the second through conductor 20B.
  • the capacitor element 10 includes a first electrode layer, a second electrode layer, and a dielectric layer.
  • the first electrode layer and the second electrode layer face each other in the thickness direction perpendicular to the planar direction, via the dielectric layer.
  • the capacitor element 10 includes an anode plate 11, a cathode layer 12, and a dielectric layer 13.
  • the anode plate 11 and the cathode layer 12 face each other in a thickness direction (up-down direction in FIG. 3) perpendicular to the planar direction (left-right direction in FIG. 3) via the dielectric layer 13.
  • the anode plate 11 corresponds to the first electrode layer
  • the cathode layer 12 corresponds to the second electrode layer.
  • the capacitor element 10 constitutes an electrolytic capacitor.
  • the anode plate 11 has, for example, a core 11A made of metal and a porous portion 11B provided on at least one of the main surfaces of the core 11A.
  • the porous portion 11B is provided on both main surfaces of the core 11A, but the porous portion 11B may be provided on only one of the main surfaces of the core 11A.
  • a dielectric layer 13 is provided on the surface of the porous portion 11B, and a cathode layer 12 is provided on the surface of the dielectric layer 13.
  • the cathode layer 12 includes, for example, a solid electrolyte layer 12A provided on the surface of the dielectric layer 13. It is preferable that the cathode layer 12 further includes a conductor layer 12B provided on the surface of the solid electrolyte layer 12A.
  • the capacitor element 10 constitutes a solid electrolytic capacitor.
  • the first through conductor 20A is provided at least on the inner wall surface of the first through hole 50A that penetrates the capacitor element 10 in the thickness direction. That is, the first through conductor 20A may be provided only on the inner wall surface of the first through hole 50A, or may be provided throughout the entire interior of the first through hole 50A.
  • the space surrounded by the first through conductor 20A in the first through hole 50A may be filled with a material containing resin. That is, a first resin filling portion 25A may be provided inside the first through conductor 20A.
  • the first through conductor 20A is provided on the inner wall surface of the first through hole 50A that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.
  • the first penetrating conductor 20A is present within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the first penetrating conductor 20A is electrically connected to the first electrode layer (e.g., anode plate 11).
  • the first penetrating conductor 20A is connected at its end to the first conductor wiring layer 40A provided on the surface of the sealing layer 30.
  • the first penetrating conductor 20A is electrically connected to the anode plate 11 on the inner wall surface of the first through hole 50A. More specifically, it is preferable that the first penetrating conductor 20A is electrically connected to the end surface of the anode plate 11 that faces the inner wall surface of the first through hole 50A in the planar direction. In this case, no insulating material such as the sealing layer 30 is filled between the end surface of the anode plate 11 and the first penetrating conductor 20A.
  • the core portion 11A and the porous portion 11B are exposed on the end face of the anode plate 11 that is electrically connected to the first through conductor 20A.
  • the porous portion 11B as well as the core portion 11A are electrically connected to the first through conductor 20A.
  • the first through conductor 20A is electrically connected to the anode plate 11 around the entire circumference of the first through hole 50A.
  • the first through conductor 20A may be electrically connected via an anode connection layer, or may be directly connected to the end face of the anode plate 11.
  • the second through conductor 20B is provided at least on the inner wall surface of the second through hole 50B that penetrates the capacitor element 10 in the thickness direction. That is, the second through conductor 20B may be provided only on the inner wall surface of the second through hole 50B, or may be provided throughout the entire interior of the second through hole 50B.
  • the space surrounded by the second through conductor 20B in the second through hole 50B may be filled with a material containing resin. That is, a second resin filling portion 25B may be provided inside the second through conductor 20B.
  • the second through conductor 20B is provided on the inner wall surface of the second through hole 50B that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.
  • the second penetrating conductor 20B is present within the cathode layer 12 when viewed in a plan view in the thickness direction of the anode plate 11.
  • the second through conductor 20B is electrically connected to a second electrode layer (e.g., cathode layer 12).
  • the second through conductor 20B is connected at its end to a second conductor wiring layer 40B provided on the surface of the sealing layer 30.
  • an insulating material such as a sealing layer 30 is filled between the end face of the anode plate 11 and the second through conductor 20B.
  • the sealing layer 30 is provided to cover the capacitor element 10.
  • the sealing layer 30 protects the capacitor element 10.
  • the sealing layer 30 is provided on both principal surfaces of the capacitor element 10 that face each other in the thickness direction.
  • the capacitor element 10 may further include an insulating layer 35 provided around the first through conductor 20A or the second through conductor 20B on at least one of the main surfaces of the anode plate 11.
  • the capacitor element 10 may further include an insulating layer 35 provided on at least one of the main surfaces of the anode plate 11 so as to surround the cathode layer 12.
  • the first conductor wiring layer 40A is provided on the surface of the sealing layer 30 and is electrically connected to the first through conductor 20A.
  • the first conductor wiring layer 40A is provided on the surface of the first through conductor 20A and functions as a connection terminal of the capacitor element 10.
  • the first conductor wiring layer 40A is electrically connected to the anode plate 11 via the first through conductor 20A and functions as a connection terminal for the anode plate 11.
  • the second conductor wiring layer 40B is provided on the surface of the sealing layer 30 and is electrically connected to the second through conductor 20B.
  • the second conductor wiring layer 40B is provided on the surface of the second through conductor 20B and functions as a connection terminal of the capacitor element 10.
  • the second conductor wiring layer 40B is electrically connected to the cathode layer 12 through a via conductor 45 provided inside the sealing layer 30, and functions as a connection terminal for the cathode layer 12.
  • Figure 4 is an example of a plan view of the capacitor array shown in Figure 3 taken along line IV-IV.
  • the area of the capacitor unit 1U As shown in FIG. 4, in a planar view from the thickness direction of the capacitor array 1, the area of the capacitor unit 1U, the diameter of the first through hole 50A (the length indicated by D TH1 in FIG. 4), the area of the first through conductor 20A in the first through hole 50A, the diameter of the second through hole 50B (the length indicated by D TH2 in FIG. 4), the area of the second through conductor 20B in the second through hole 50B, and the center-to-center distance between the first through conductor 20A and the second through conductor 20B (the length indicated by P in FIG. 4) are equivalent among the capacitor units 1U.
  • equivalent does not mean only perfect equivalence, but also means substantial equivalence, including differences of a few percent, for example.
  • the diameter of the through hole means the diameter if the planar shape is circular, and means the equivalent circular diameter if the planar shape is other than circular.
  • the center of a through conductor means the center of the smallest circle that contains the through conductor when viewed in a plane from the thickness direction of the capacitor array. Therefore, the center-to-center distance between the first through conductor and the second through conductor means the length of the line segment connecting the center of the first through conductor and the center of the second through conductor, as determined by the above method. The same applies to the center-to-center distance between the first through conductor and the first through conductor, and the center-to-center distance between the second through conductor and the second through conductor, which will be described later.
  • the shapes of the capacitor units 1U are the same among the capacitor units 1U.
  • the shape of the first through conductors 20A constituting the capacitor units 1U be the same between the capacitor units 1U.
  • the shape of the second through conductors 20B constituting the capacitor units 1U be the same between the capacitor units 1U.
  • the diameter of the first through hole 50A may be different from the diameter of the second through hole 50B, but it is preferable that it is equal to the diameter of the second through hole 50B. Therefore, in all capacitor units 1U, it is preferable that the diameter of the first through hole 50A is equal to the diameter of the second through hole 50B.
  • the area of the first through conductor 20A in the first through hole 50A may be different from the area of the second through conductor 20B in the second through hole 50B, but it is preferable that it is equal to the area of the second through conductor 20B in the second through hole 50B. Therefore, in all capacitor units 1U, it is preferable that the area of the first through conductor 20A in the first through hole 50A is equal to the area of the second through conductor 20B in the second through hole 50B.
  • the effective overall capacitance which corresponds to the capacitance of the total area of the capacitor units 1U out of the capacitance of the entire capacitor array 1, is larger than a virtual overall capacitance obtained by multiplying the total number n of virtual units corresponding to the center-to-center distance p when the capacitance C unit per unit is maximum by the maximum value of the capacitance C unit per unit.
  • Condition 2 In a planar view from the thickness direction of the capacitor array 1, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent between the virtual units.
  • the shapes of the virtual units are the same among the virtual units.
  • the shape of the first through conductors that make up the virtual units be the same between the virtual units.
  • the shape of the second through conductors that make up the virtual units be the same between the virtual units.
  • the diameter of the first through hole may be different from the diameter of the second through hole, but is preferably equal to the diameter of the second through hole 2. Therefore, in all virtual units, the diameter of the first through hole is preferably equal to the diameter of the second through hole.
  • the area of the first through conductor in the first through hole may be different from the area of the second through conductor in the second through hole, but it is preferable that it is equal to the area of the second through conductor in the second through hole. Therefore, in all virtual units, it is preferable that the area of the first through conductor in the first through hole is equal to the area of the second through conductor in the second through hole.
  • Condition 3 In the imaginary unit, the area of the first through conductor in the first through hole is s th1 , and the area of the second through conductor in the second through hole is s th2 .
  • the occupied area of the capacitor array 1 is constant, the area of the imaginary unit, the diameter of the first through hole , and the diameter of the second through hole are determined according to the center-to-center distance p between the first through conductor and the second through conductor so that, in the imaginary unit, the value of (s th1 +s th2 ) ⁇ n is equal to the value of (S TH1 +S TH2 ) ⁇ N. This allows the capacitance C unit per unit to be calculated.
  • the total virtual capacitance is calculated by multiplying the total number n of virtual units corresponding to the center distance p by the capacitance C unit per unit.
  • FIG. 5 is an example of a graph showing the correlation of the capacitance C unit per unit or the virtual total capacitance with respect to the center-to-center distance p between the first through conductor and the second through conductor.
  • the capacitor array 1 is characterized in that the effective overall capacitance, which corresponds to the capacitance of the total area of the capacitor units 1U out of the capacitance of the entire capacitor array 1, is greater than the virtual overall capacitance obtained by multiplying the total number n of virtual units corresponding to the center-to-center distance p when the capacitance C unit per unit is at its maximum value by the maximum value of the capacitance C unit per unit.
  • the total area S1 of the capacitor units 1U may be the same as the area S2 of the entire capacitor array 1, or may be smaller than the area S2 of the entire capacitor array 1. Therefore, the substantial total capacitance of the capacitor array 1 may not match the capacitance of the entire capacitor array 1. For example, in FIG. 11 described later, the capacitance of the portion located outside the first unit 1UA and the fourth unit 1UD, which are part of the capacitor unit 1U, is not included in the substantial total capacitance.
  • C0 denotes a virtual total capacitance obtained by multiplying the total number n of virtual units corresponding to the center distance p ( p0 in Fig. 5) when the capacitance C unit per unit is at its maximum value by the maximum value of the capacitance C unit per unit. Therefore, a capacitor array having a substantial total capacitance larger than the capacitance indicated by C0 is within the scope of the present invention. For example, a capacitor array whose substantial total capacitance is the capacitance indicated by C1 , C2 , or C3 in Fig. 5 is within the scope of the present invention. On the other hand, a capacitor array whose substantial total capacitance is the capacitance indicated by C4 or C5 in Fig . 5 is outside the scope of the present invention.
  • the overall capacitance can be increased relative to the amount of conductor required for the through conductor depending on the amount of current.
  • FIG. 6 is a plan view showing a schematic example of an arrangement of the first and second through conductors in a capacitor array of the present invention.
  • the plan view shown in FIG. 6 is a plan view at the same position as FIG. 4 (the position of line IV-IV in FIG. 3).
  • the first through conductors 20A and the second through conductors 20B are arranged in a square configuration as a whole. In the square configuration, the first through conductors 20A or the second through conductors 20B are arranged at each vertex of the square. In the example shown in FIG. 6, the first through conductors 20A and the second through conductors 20B are arranged alternately from top to bottom, and the first through conductors 20A and the second through conductors 20B are arranged alternately from left to right.
  • FIG. 7 is a plan view illustrating an example of the arrangement shown in FIG. 6.
  • the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.
  • the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.
  • the equivalent series resistance and equivalent series inductance can be reduced. Furthermore, by equalizing the center-to-center distance between the first through conductor 20A and the second through conductor 20B, the impedance difference between the current paths can be reduced. It is also possible to disperse heat generated by the capacitor array 1A and increase the current capacity.
  • the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and in a plan view in the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.
  • the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees with respect to the center of the second through conductor 20B of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A.
  • the smallest circle that contains the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees with respect to the center of the second through conductor 20B of the first unit 1UA in a plan view from the thickness direction of the capacitor array 1A.
  • the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and in a planar view in the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.
  • the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 90 degrees or 180 degrees with respect to the center of the second through conductor 20B of the second unit 1UB in a plan view from the thickness direction of the capacitor array 1A.
  • the smallest circle that contains the second through conductor 20B of the fourth unit 1UD in a plan view from the thickness direction of the capacitor array 1A may exist on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 90 degrees or 180 degrees with respect to the center of the second through conductor 20B of the second unit 1UB.
  • the number of second through conductors 20B present within a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the first unit 1UA is the same as the number of second through conductors 20B present within a circle whose radius is the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and whose center is the center of the first through conductor 20A of the second unit 1UB.
  • FIG. 8 is a plan view illustrating another example of the arrangement shown in FIG. 6.
  • the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.
  • the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.
  • the equivalent series resistance and equivalent series inductance can be reduced. Furthermore, by equalizing the center-to-center distance between the first through conductor 20A and the second through conductor 20B, the impedance difference between the current paths can be reduced. It is also possible to disperse heat generated by the capacitor array 1A and increase the current capacity.
  • the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and in a plan view in the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.
  • the capacitor unit 1U includes the third unit 1UC, as shown in FIG. 8, it is preferable that the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees with respect to the center of the first through conductor 20A of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1A.
  • the smallest circle that contains the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees with respect to the center of the first through conductor 20A of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1A.
  • the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and in a planar view in the thickness direction of the capacitor array 1A, it is preferable that the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.
  • the first through conductor 20A of the fourth unit 1UD is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 90 degrees or 180 degrees with respect to the center of the first through conductor 20A of the second unit 1UB, in a plan view from the thickness direction of the capacitor array 1A.
  • the smallest circle that contains the first through conductor 20A of the fourth unit 1UD in a plan view from the thickness direction of the capacitor array 1A may be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 90 degrees or 180 degrees with respect to the center of the first through conductor 20A of the second unit 1UB.
  • the number of first through conductors 20A present within a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the first unit 1UA is the same as the number of first through conductors 20A present within a circle whose radius is the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and whose center is the center of the second through conductor 20B of the second unit 1UB.
  • FIG. 9 is a plan view showing a schematic diagram of another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention.
  • the plan view shown in FIG. 9 is a plan view at the same position as FIG. 4 (the position of line IV-IV in FIG. 3).
  • the first through conductors 20A and the second through conductors 20B are arranged in a hexagonal pattern as a whole.
  • the first through conductors 20A or the second through conductors 20B are arranged at each vertex of the regular hexagon and at the center of the regular hexagon.
  • the first through conductors 20A and the second through conductors 20B are arranged alternately from top to bottom. Note that when the first through conductors 20A and the second through conductors 20B are arranged in a hexagonal pattern as a whole, for example, the first through conductors 20A and the second through conductors 20B may be arranged alternately in pairs from top to bottom.
  • FIG. 10 is a plan view illustrating an example of the arrangement shown in FIG. 9.
  • the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.
  • the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.
  • the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and in a plan view in the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.
  • the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees with respect to the center of the second through conductor 20B of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1B.
  • the smallest circle that contains the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees with respect to the center of the second through conductor 20B of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1B.
  • the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and in a planar view in the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.
  • the second through conductor 20B of the fourth unit 1UD is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees with respect to the center of the second through conductor 20B of the second unit 1UB, in a plan view from the thickness direction of the capacitor array 1B.
  • the smallest circle that contains the second through conductor 20B of the fourth unit 1UD in a plan view from the thickness direction of the capacitor array 1B may be located on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees with respect to the center of the second through conductor 20B of the second unit 1UB.
  • FIG. 11 is a plan view illustrating another example of the arrangement shown in FIG. 9.
  • the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.
  • the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.
  • the capacitor unit 1U further includes a third unit 1UC adjacent to the first unit 1UA, and in a plan view in the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.
  • the capacitor unit 1U includes the third unit 1UC, as shown in FIG. 11, it is preferable that the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees with respect to the center of the first through conductor 20A of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1B.
  • the smallest circle that contains the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees with respect to the center of the first through conductor 20A of the first unit 1UA as a reference in a plan view from the thickness direction of the capacitor array 1B.
  • the capacitor unit 1U further includes a fourth unit 1UD adjacent to the first unit 1UA, and in a planar view in the thickness direction of the capacitor array 1B, it is preferable that the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.
  • the first through conductor 20A of the fourth unit 1UD is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees with respect to the center of the first through conductor 20A of the second unit 1UB, in a plan view from the thickness direction of the capacitor array 1B.
  • the smallest circle that contains the first through conductor 20A of the fourth unit 1UD in a plan view from the thickness direction of the capacitor array 1B may be located on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees with respect to the center of the first through conductor 20A of the second unit 1UB.
  • the capacitor unit 1U when the capacitor unit 1U includes a third unit 1UC, it is preferable that, in a planar view from the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA and the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor 20B of the first unit 1UA.
  • the capacitor unit 1U when the capacitor unit 1U includes a fourth unit 1UD, it is preferable that, in a planar view from the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB and the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor 20B of the second unit 1UB.
  • the capacitor unit 1U when the capacitor unit 1U includes a third unit 1UC, it is preferable that, in a plan view from the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA and the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor 20A of the first unit 1UA.
  • the capacitor unit 1U when the capacitor unit 1U includes a fourth unit 1UD, it is preferable that, in a plan view from the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB and the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor 20A of the second unit 1UB.
  • FIG. 12 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG. 6.
  • the area of the capacitor unit 1U be expressed as 2P ⁇ P.
  • FIG. 13 is a plan view showing an example of a capacitor unit in the arrangement shown in FIG. 9.
  • the area of the capacitor unit 1U be expressed as 2P ⁇ 3/2 ⁇ P.
  • capacitor array 1, 1A, or 1B The detailed configuration of capacitor array 1, 1A, or 1B is described below.
  • the planar shape of the capacitor unit 1U when viewed from the thickness direction may be, for example, a rectangle (square or oblong), a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, or a combination of these.
  • the planar shape of the capacitor unit 1U may also be an L-shape, a C-shape, a stepped shape, etc.
  • the anode plate 11 is preferably made of a valve metal that exhibits so-called valve action.
  • valve metals include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Of these, aluminum or an aluminum alloy is preferred.
  • the shape of the anode plate 11 is preferably flat, and more preferably foil-like.
  • plate-like includes “foil-like”.
  • the anode plate 11 may have a porous portion 11B on at least one of the main surfaces of the core portion 11A.
  • the anode plate 11 may have a porous portion 11B on only one of the main surfaces of the core portion 11A, or may have a porous portion 11B on both main surfaces of the core portion 11A.
  • the porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and is more preferably an etched layer.
  • the thickness of the anode plate 11 before the etching process is preferably 60 ⁇ m or more and 200 ⁇ m or less.
  • the thickness of the unetched core portion 11A after the etching process is preferably 15 ⁇ m or more and 70 ⁇ m or less.
  • the thickness of the porous portion 11B is designed according to the required withstand voltage and electrostatic capacitance, but it is preferable that the combined thickness of the porous portions 11B on both sides of the core portion 11A is 10 ⁇ m or more and 180 ⁇ m or less.
  • the pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less.
  • the pore diameter of the porous portion 11B means the median diameter D50 measured by a mercury porosimeter.
  • the pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.
  • the dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape.
  • the dielectric layer 13 is preferably made of an oxide film of the valve metal.
  • the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).
  • the thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.
  • the cathode layer 12 includes a solid electrolyte layer 12A
  • examples of materials constituting the solid electrolyte layer 12A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred.
  • the conductive polymer may also include a dopant such as polystyrene sulfonate (PSS).
  • PSS polystyrene sulfonate
  • the solid electrolyte layer 12A preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13, and an outer layer that covers the dielectric layer 13.
  • the thickness of the solid electrolyte layer 12A from the surface of the porous portion 11B is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the solid electrolyte layer 12A is formed, for example, by a method of forming a polymerized film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or by applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.
  • the solid electrolyte layer 12A can be formed in a predetermined area by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • the conductor layer 12B includes at least one of a conductive resin layer and a metal layer.
  • the conductor layer 12B may be only a conductive resin layer or only a metal layer. It is preferable that the conductor layer 12B covers the entire surface of the solid electrolyte layer 12A.
  • the conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.
  • the metal layer examples include metal plating films and metal foils.
  • the metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main components.
  • the term "main component" refers to the elemental component with the largest weight ratio.
  • the conductive layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.
  • the carbon layer is provided to electrically and mechanically connect the solid electrolyte layer 12A and the copper layer.
  • the carbon layer can be formed in a predetermined area by applying carbon paste to the surface of the solid electrolyte layer 12A by sponge transfer, screen printing, dispenser application, inkjet printing, or other methods. It is preferable to laminate the copper layer in the next process to the carbon layer while it is still viscous before drying.
  • the thickness of the carbon layer is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the copper layer can be formed in a predetermined area by applying copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray application, dispenser application, inkjet printing, or other methods.
  • the thickness of the copper layer is preferably 2 ⁇ m or more and 20 ⁇ m or less.
  • the first through conductor 20A is formed, for example, as follows. First, a first through hole 50A penetrating the sealing layer 30 and the capacitor element 10 in the thickness direction is formed by performing processing such as drilling and laser processing. Then, the inner wall surface of the first through hole 50A is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver to form the first through conductor 20A. When forming the first through conductor 20A, for example, the inner wall surface of the first through hole 50A is metallized by a process such as electroless copper plating or electrolytic copper plating, which makes processing easier.
  • the method of forming the first through conductor 20A may be a method of filling the first through hole 50A with a metal material, a composite material of metal and resin, or the like.
  • the second through conductor 20B is formed, for example, as follows. First, a through hole penetrating the capacitor element 10 in the thickness direction is formed by performing processing such as drilling and laser processing. Next, an insulating material such as a sealing layer 30 is filled into the through hole. The part filled with the insulating material is processed by performing processing such as drilling and laser processing to form the second through hole 50B. At this time, the diameter of the second through hole 50B is made smaller than the diameter of the through hole filled with the insulating material, so that the insulating material is present between the inner wall surface of the through hole filled with the insulating material and the inner wall surface of the second through hole 50B in the planar direction.
  • the inner wall surface of the second through hole 50B is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, to form the second through conductor 20B.
  • a metal material containing a low-resistance metal such as copper, gold, or silver
  • the inner wall surface of the second through hole 50B can be metallized by a process such as electroless copper plating or electrolytic copper plating to facilitate processing.
  • the method of forming the second through conductor 20B may be a method of filling the second through hole 50B with a metal material, a composite material of metal and resin, or the like, in addition to a method of metallizing the inner wall surface of the second through hole 50B.
  • the first resin filling portion 25A When the first resin filling portion 25A is provided inside the first penetrating conductor 20A, the first resin filling portion 25A may be a conductor or an insulator.
  • the material constituting the first resin filling portion 25A may have a thermal expansion coefficient larger than, smaller than, or the same as the material constituting the first penetrating conductor 20A (e.g., copper).
  • the second resin filling portion 25B When the second resin filling portion 25B is provided inside the second penetrating conductor 20B, the second resin filling portion 25B may be a conductor or an insulator.
  • the material constituting the second resin filling portion 25B may have a thermal expansion coefficient larger than, smaller than, or the same as the material constituting the second penetrating conductor 20B (e.g., copper).
  • the sealing layer 30 is made of an insulating material. In this case, it is preferable that the sealing layer 30 is made of an insulating resin.
  • Examples of the insulating resin that constitutes the sealing layer 30 include epoxy resin, phenolic resin, etc.
  • the sealing layer 30 further contains a filler.
  • the filler contained in the sealing layer 30 may be, for example, inorganic fillers such as silica particles and alumina particles.
  • the sealing layer 30 may be composed of only one layer, or may be composed of two or more layers. When the sealing layer 30 is composed of two or more layers, the materials constituting each layer may be the same or different.
  • the sealing layer 30 is formed to seal the capacitor element 10, for example, by a method of thermocompressing an insulating resin sheet, or by applying an insulating resin paste and then thermally curing it.
  • a layer such as a stress relief layer or a moisture-proof film may be provided between the capacitor element 10 and the sealing layer 30.
  • the insulating layer 35 is made of an insulating material. In this case, it is preferable that the insulating layer 35 is made of an insulating resin.
  • Examples of insulating resins constituting the insulating layer 35 include polyphenylsulfone resin, polyethersulfone resin, cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkylvinylether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.
  • the insulating layer 35 may be made of the same resin as the sealing layer 30. Unlike the sealing layer 30, if the insulating layer 35 contains inorganic filler, this may adversely affect the effective capacitance portion of the capacitor element 10, so it is preferable that the insulating layer 35 is made of a resin alone.
  • the insulating layer 35 can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.
  • a mask material such as a composition containing an insulating resin
  • the insulating layer 35 may be formed on the porous portion 11B either before the dielectric layer 13 or after the dielectric layer 13.
  • the first conductor wiring layer 40A may be made of a metal material containing a low-resistance metal such as silver, gold, or copper. In this case, the first conductor wiring layer 40A is formed, for example, by plating the surface of the first through conductor 20A.
  • a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler, and resin may be used as the constituent material of the first conductor wiring layer 40A.
  • the second conductor wiring layer 40B may be made of a metal material containing a low-resistance metal such as silver, gold, or copper.
  • the second conductor wiring layer 40B is formed, for example, by plating the surface of the second through conductor 20B.
  • a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler, and resin may be used as the constituent material of the second conductor wiring layer 40B.
  • the constituent materials of the first conductor wiring layer 40A and the second conductor wiring layer 40B are preferably the same as each other at least in terms of type, but may be different from each other.
  • Examples of materials that can be used to form the via conductors 45 include metal materials that contain low-resistance metals such as silver, gold, and copper.
  • the via conductors 45 are formed, for example, by plating the inner wall surface of a through hole that penetrates the sealing layer 30 in the thickness direction with the metal material described above, or by filling the hole with a conductive paste and then performing a heat treatment.
  • the capacitor array of the present invention is not limited to the above embodiment, and various applications and modifications can be made within the scope of the present invention with respect to the configuration of the capacitor array, manufacturing conditions, etc.
  • the capacitor array of the present invention can be suitably used as a constituent material of a composite electronic component.
  • a composite electronic component includes, for example, the capacitor array of the present invention, external electrodes (e.g., a first conductor wiring layer and a second conductor wiring layer) provided on the outside of the sealing layer of the capacitor array and electrically connected to the first electrode layer and the second electrode layer of the capacitor element, respectively, and an electronic component connected to the external electrodes.
  • the electronic component connected to the external electrode may be a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. Also, a composite of a passive element and an active element may be connected to the external electrode.
  • Passive elements include, for example, inductors. Active elements include memory, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), PMICs (Power Management ICs), etc.
  • the capacitor array of the present invention has a sheet-like shape overall. Therefore, in a composite electronic component, the capacitor array can be treated like a mounting board, and electronic components can be mounted on the capacitor array. Furthermore, by making the electronic components to be mounted on the capacitor array into a sheet-like shape, it is also possible to connect the capacitor array and the electronic components in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, the active elements and passive elements can be configured like a single module.
  • a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.
  • a circuit layer may be formed on one side of a capacitor matrix sheet on which multiple capacitor arrays of the present invention are laid out, and the capacitors may be connected to passive or active elements.
  • the capacitor array of the present invention may be placed in a cavity portion previously provided in a substrate, embedded in resin, and then a circuit layer may be formed on the resin.
  • Another electronic component passive element or active element
  • the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and then the capacitor array may be connected to passive or active elements.
  • a capacitor array including a plurality of capacitor units arranged in a planar direction, Each of the capacitor units includes a capacitor element, a first through conductor, and a second through conductor; the capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer; the first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction via the dielectric layer, the first through conductor is provided on at least an inner wall surface of a first through hole penetrating the capacitor element in the thickness direction, and is electrically connected to the first electrode layer; the second through conductor is provided on at least an inner wall surface of a second through hole penetrating the capacitor element in the thickness direction, and is electrically connected to the second electrode layer; In a plan view in the thickness direction of the capacitor array, an area of the capacitor unit, a diameter of the first through hole, an area of the first through conductor in the first through hole, a diameter of the second through hole, an area of the second through conductor in the second
  • Condition 2 In a plan view from the thickness direction of the capacitor array, the area of the virtual unit, the diameter of the first through hole, the area of the first through conductor in the first through hole, the diameter of the second through hole, the area of the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equivalent between the virtual units.
  • Condition 3 In the virtual unit, an area of the first through conductor in the first through hole is s th1 , and an area of the second through conductor in the second through hole is s th2 .
  • Condition 4 The value of (s th1 +s th2 ) ⁇ n is equal to the value of (S TH1 +S TH2 ) ⁇ N.
  • a capacitor array in which an effective overall capacitance, which corresponds to a capacitance of a total area of the capacitor units out of the capacitance of the entire capacitor array, is larger than a virtual overall capacitance obtained by multiplying the total number n of the virtual units corresponding to the center-to-center distance p when the capacitance C unit per unit is at a maximum value by the maximum value of the capacitance C unit per unit.
  • the capacitor unit includes a first unit and a second unit adjacent to the first unit, The capacitor array described in ⁇ 1>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first penetrating conductor of the first unit and the second penetrating conductor of the first unit is equal to the center-to-center distance between the first penetrating conductor of the first unit and the second penetrating conductor of the second unit.
  • the capacitor unit further includes a third unit adjacent to the first unit;
  • the capacitor array described in ⁇ 2> wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second penetrating conductor of the first unit and the second penetrating conductor of the second unit is equal to the center-to-center distance between the second penetrating conductor of the first unit and the second penetrating conductor of the third unit.
  • ⁇ 4> The capacitor array described in ⁇ 3>, wherein, in a planar view from the thickness direction of the capacitor array, the second through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the second through conductor of the first unit and the center of the second through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the second through conductor of the first unit.
  • the capacitor unit further includes a fourth unit adjacent to the first unit, A capacitor array described in ⁇ 3> or ⁇ 4>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second penetrating conductor of the second unit and the second penetrating conductor of the first unit is equal to the center-to-center distance between the second penetrating conductor of the second unit and the second penetrating conductor of the fourth unit.
  • ⁇ 6> A capacitor array described in any one of ⁇ 2> to ⁇ 5>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second penetrating conductor of the first unit and the first penetrating conductor of the first unit is equal to the center-to-center distance between the second penetrating conductor of the first unit and the first penetrating conductor of the second unit.
  • the capacitor unit further includes a third unit adjacent to the first unit;
  • the capacitor array described in ⁇ 6> wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first penetrating conductor of the first unit and the first penetrating conductor of the second unit is equal to the center-to-center distance between the first penetrating conductor of the first unit and the first penetrating conductor of the third unit.
  • ⁇ 8> The capacitor array described in ⁇ 7>, wherein, in a planar view from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit.
  • the capacitor unit further includes a fourth unit adjacent to the first unit, A capacitor array described in ⁇ 7> or ⁇ 8>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first penetrating conductor of the second unit and the first penetrating conductor of the first unit is equal to the center-to-center distance between the first penetrating conductor of the second unit and the first penetrating conductor of the fourth unit.
  • the capacitor unit includes a first unit and a second unit adjacent to the first unit, The capacitor array described in ⁇ 1>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the second penetrating conductor of the first unit and the first penetrating conductor of the first unit is equal to the center-to-center distance between the second penetrating conductor of the first unit and the first penetrating conductor of the second unit.
  • the capacitor unit further includes a third unit adjacent to the first unit;
  • the capacitor array described in ⁇ 10> wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first penetrating conductor of the first unit and the first penetrating conductor of the second unit is equal to the center-to-center distance between the first penetrating conductor of the first unit and the first penetrating conductor of the third unit.
  • ⁇ 12> The capacitor array described in ⁇ 11>, wherein, in a planar view from the thickness direction of the capacitor array, the first through conductor of the third unit is located on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit and the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees, or 180 degrees with respect to the center of the first through conductor of the first unit.
  • the capacitor unit further includes a fourth unit adjacent to the first unit, A capacitor array described in ⁇ 11> or ⁇ 12>, wherein, when viewed in a plane from the thickness direction of the capacitor array, the center-to-center distance between the first penetrating conductor of the second unit and the first penetrating conductor of the first unit is equal to the center-to-center distance between the first penetrating conductor of the second unit and the first penetrating conductor of the fourth unit.
  • ⁇ 14> A capacitor array described in any one of ⁇ 1> to ⁇ 13>, wherein when viewed in a plane from the thickness direction of the capacitor array, when the center-to-center distance between the first penetrating conductor and the second penetrating conductor is P, the area of the capacitor unit is expressed as 2P ⁇ ⁇ 3/2 ⁇ P.
  • ⁇ 15> A capacitor array described in any one of ⁇ 1> to ⁇ 13>, wherein when viewed in a plane from the thickness direction of the capacitor array, when the center-to-center distance between the first through conductor and the second through conductor is P, the area of the capacitor unit is expressed as 2P x P.
  • ⁇ 16> The capacitor array according to any one of ⁇ 1> to ⁇ 15>, wherein in the same capacitor unit, the diameter of the first through hole is equal to the diameter of the second through hole.
  • ⁇ 17> A capacitor array described in any one of ⁇ 1> to ⁇ 16>, wherein in the same capacitor unit, the area of the first through conductor in the first through hole is equal to the area of the second through conductor in the second through hole.
  • the first electrode layer is an anode plate having a core portion made of a metal and a porous portion provided on at least one main surface of the core portion, the dielectric layer is provided on a surface of the porous portion,
  • the capacitor array according to any one of ⁇ 1> to ⁇ 17>, wherein the second electrode layer is a cathode layer provided on a surface of the dielectric layer.
  • Capacitor element 11 Anode plate (first electrode layer) 11A core part 11B porous part 12 cathode layer (second electrode layer) 12A solid electrolyte layer 12B conductor layer 13 dielectric layer 20A first penetrating conductor 20B second penetrating conductor 25A first resin filling portion 25B second resin filling portion 30 sealing layer 35 insulating layer 40A first conductor wiring layer 40B second conductor wiring layer 45 via conductor 50A first through hole 50B second through hole D TH1 diameter of first through hole D TH2 diameter of second through hole P center-to-center distance between first penetrating conductor and second penetrating conductor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2024/003670 2023-02-28 2024-02-05 コンデンサアレイ Ceased WO2024181042A1 (ja)

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JP2025503698A JP7722616B2 (ja) 2023-02-28 2024-02-05 コンデンサアレイ
TW113102207A TWI895940B (zh) 2023-02-28 2024-02-27 電容器陣列
US19/007,888 US20250166931A1 (en) 2023-02-28 2025-01-02 Capacitor array

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JP2023-029856 2023-02-28

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165152A (ja) * 2004-12-06 2006-06-22 Matsushita Electric Ind Co Ltd 固体電解コンデンサ及び固体電解コンデンサ内蔵基板と、それらの製造方法
JP2007173439A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd コンデンサ内蔵基板
JP2009004417A (ja) * 2007-06-19 2009-01-08 Panasonic Corp 固体電解コンデンサ、固体電解コンデンサ内蔵基板およびその製造方法
JP2020167361A (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 コンデンサアレイ、及び、複合電子部品

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4462194B2 (ja) * 2006-01-17 2010-05-12 Ｔｄｋ株式会社 積層型貫通コンデンサアレイ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165152A (ja) * 2004-12-06 2006-06-22 Matsushita Electric Ind Co Ltd 固体電解コンデンサ及び固体電解コンデンサ内蔵基板と、それらの製造方法
JP2007173439A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd コンデンサ内蔵基板
JP2009004417A (ja) * 2007-06-19 2009-01-08 Panasonic Corp 固体電解コンデンサ、固体電解コンデンサ内蔵基板およびその製造方法
JP2020167361A (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 コンデンサアレイ、及び、複合電子部品

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JPWO2024181042A1 (https=) 2024-09-06
JP7722616B2 (ja) 2025-08-13

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