WO2024149587A1 - Module de circuit et commutateur à semi-conducteurs comportant une pluralité de modules de circuit montés en série - Google Patents

Module de circuit et commutateur à semi-conducteurs comportant une pluralité de modules de circuit montés en série Download PDF

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Publication number
WO2024149587A1
WO2024149587A1 PCT/EP2023/086933 EP2023086933W WO2024149587A1 WO 2024149587 A1 WO2024149587 A1 WO 2024149587A1 EP 2023086933 W EP2023086933 W EP 2023086933W WO 2024149587 A1 WO2024149587 A1 WO 2024149587A1
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WO
WIPO (PCT)
Prior art keywords
transistor
connection
circuit
semiconductor switch
terminal
Prior art date
Application number
PCT/EP2023/086933
Other languages
German (de)
English (en)
Inventor
Karsten Handt
Christopher Betzin
Hauke NANNEN
Marvin TANNHÄUSER
Original Assignee
Siemens Aktiengesellschaft
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Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2024149587A1 publication Critical patent/WO2024149587A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Definitions

  • 202300630 1 Description Circuit module and semiconductor switch with a plurality of circuit modules connected in series
  • the invention relates to a circuit module, a semiconductor switch with a plurality of circuit modules connected in series, a power electronic switching or protection device with a semiconductor switch and a method for determining the short-circuit current limitation of a semiconductor switch according to the invention.
  • a new development in low-voltage technology concerns the replacement of conventional electromechanical switches with so-called solid state circuit breakers (SSCBs).
  • Fig. 1 shows the basic structure of a typical SSCB.
  • the main components of the SSCB are a power supply unit NT, a control unit SE, an electronic interruption unit EU and a mechanical isolating contact unit MK.
  • SSCBs as circuit breakers can implement practically all the protective functions of conventional electromechanical circuit breakers in one switch. Other advantages are the switching speed, flexible control and monitoring functions.
  • high conduction losses are known to be a disadvantage of typical SSCBs.
  • increased efforts have been made to reduce these conduction losses.
  • One promising approach is to connect many unipolar components in parallel. In contrast to bipolar components, these have an almost constant resistance in the switched-on state (hereinafter referred to as RDSon, i.e. resistance between drain and source in the switched-on state). If the gate voltage on the power semiconductor is sufficiently high, this linearity is maintained up to the highest currents. This is shown in Fig. 2 using a typical output characteristic.
  • the power semiconductor has no current limitation whatsoever in a short circuit. It is thermally destroyed beforehand.
  • This difficulty can be overcome in two ways.
  • One possibility is to limit the gate voltage to values at which the current remains within the permissible range.
  • Fig. 3 shows a typical characteristic field R DSon depending on the gate voltage of the MOSFET described in more detail above.
  • the gate voltage can be lowered (in the example case, for example, to 6 V) and thereby the gate current can be limited to permissible values (at 6 V to approx. 140 A - see Fig. 2).
  • this measure results in a significant increase in the on-state resistance R DSon even in normal operation and thus significantly higher on-state losses.
  • the second option is to protect the switch with short-circuit current detection and shutdown, whereby the demands on the electronics become greater the lower the line inductance between the current source and the short circuit.
  • the design itself becomes a problem, since in reality it is difficult to specify a minimum possible supply line inductance without having to install it as a discrete component in series with the load path. 202300630 3 which in turn causes significant costs and requires installation space. So you find yourself in a dilemma. Either you don't use the performance of the power semiconductor, or you accept considerable additional effort for the electronics for short-circuit detection and shutdown.
  • the object of the invention is to enable a low-cost and flexible implementation of an electronic interruption unit.
  • a circuit module for a semiconductor switch is proposed. This is formed with a first transistor with a source connection, a control connection and a sink connection.
  • source connection refers to a source connection or an emitter connection
  • control connection refers to a gate connection or a base connection
  • sink connection refers to a drain connection or a collector connection.
  • the circuit module has a second transistor with a source connection, a control connection and a sink connection, the source connection being connected to the control connection of the first transistor and the sink connection being connected to the source connection of the first transistor.
  • a connection is provided from the control connection of the second transistor to a driver (which itself does not belong to the circuit module).
  • the first transistor can be a unipolar transistor, e.g. a MOSFET.
  • a bipolar transistor e.g. an IGBT (Insulated-Gate Bipolar Transistor) with an anti-parallel protective diode (integrated or as an external freewheeling diode) is also possible.
  • the connection to the driver is formed with a conductor section into which a diode is introduced, which blocks in the direction of the driver.
  • the connection can be formed with a conductor section into which a fuse is introduced.
  • the control terminal and the source terminal of the second transistor are connected to one another, and a diode is arranged between the control terminal and the source terminal of the second transistor, which blocks in the direction of the control terminal.
  • the control terminal and the drain terminal of the second transistor are connected to one another, and a diode is arranged between the control terminal and the drain terminal of the second transistor.
  • a resistor (preferably an ohmic resistor) is arranged between the first transistor and the control terminal.
  • a voltage limiter is provided in parallel with the first transistor.
  • a capacitive resistor can also be provided in parallel with the first transistor.
  • the control terminal and the source terminal of the first transistor are connected to one another, and a diode is arranged between the control terminal and the source terminal of the first transistor, which blocks in the direction of the control terminal.
  • This diode is an optional feature, implemented e.g. by a Zener diode, which limits the maximum gate voltage or control terminal voltage.
  • the circuit module is formed with a third transistor, wherein the third transistor is of the same type as the first transistor and the first and third transistors are each directly connected to the source terminal (i.e. are arranged practically in opposite directions).
  • the source terminal of the second transistor is connected to the control terminals of the first and third transistors and the drain terminal of the second transistor is connected to the connection of the source terminals of the first and third transistors.
  • the invention also relates to a semiconductor switch with a plurality of circuit modules according to the invention connected in series with a driver which is connected via the respective connections to the control terminals of the respective second transistors of the individual circuit modules.
  • this semiconductor switch can be formed with exactly one driver.
  • a resistor preferably an ohmic resistor
  • the semiconductor switch is not necessarily formed with completely identical circuit modules.
  • protective diodes and voltage limits can be provided selectively only for the circuit modules where the specific design of the semiconductor switch requires it.
  • the circuit module with the smallest distance to the driver can be formed without a second transistor.
  • the semiconductor switch according to the invention is formed with a plurality of circuit modules connected in series, with two of the circuit modules being connected one after the other in opposite switching directions (for example by connecting the source connections).
  • the semiconductor switch then preferably has an even number of circuit modules (greater than 4), with the first half of the circuit modules being connected in series one after the other with the same switching direction and the second half of the circuit modules being connected in series one after the other with the opposite switching direction.
  • an output of the driver can be connected to the connection of the two circuit modules connected in opposite switching directions.
  • the two circuit modules connected in opposite switching directions are formed without a second transistor.
  • the circuit modules can - possibly with the exception of the modules connected in opposite forward direction - be designed with a diode between the control connection and the source connection of the first transistor, which blocks in the direction of the source connection.
  • the semiconductor switch has a defined circuit module when installed, which terminates the series connection of circuit modules on the load side, and the driver is arranged or looped between a connection to the connection of the source connections of the first and third transistors of the load-side terminating circuit module and a connection to the connections to the control connections of the respective second transistors of the individual circuit modules.
  • at least a third transistor of a first circuit module of the semiconductor switch and a first transistor of a second circuit module adjacent to the first circuit module can be integrated together as a bidirectional component.
  • the semiconductor switch according to the invention allows the short-circuit current to be limited.
  • the semiconductor switch is formed with a sufficient number of semiconductor modules to set a predetermined upper limit for the short-circuit current.
  • the driver voltage of the semiconductor switch can then be adjusted in accordance with an upper limit for the short-circuit current.
  • the invention also includes a power electronic switching or protective device with a semiconductor switch according to the invention, in which preferably this semiconductor switch ensures the switching function of the electronic interruption unit.
  • power electronic switching or protective device refers to a device that implements a switching or protective function using power electronics. This applies to an SSCB. However, the invention is not limited to SSCBs, but can also be used in other devices (e.g. motor starters).
  • the invention can also be used in switching and protective devices without a mechanical isolator.
  • An application scenario without a neutral conductor e.g. in IT networks (an option discussed for DC networks), is also conceivable.
  • 202300630 8 The invention is described in more detail below using an exemplary embodiment. They show Fig. 1: the structure of an SSCB, Fig. 2: output line field of a typical SI MOSFET, Fig. 3: characteristic field of the on-resistance R Dson as a function of the drain current at different gate-source voltages of a typical SI MOSFET, Fig. 4a-4c: circuit modules according to the invention with which a circuit according to the invention can be constructed, Fig. 5: a circuit according to the invention, Fig.
  • Fig. 6 an example to illustrate the short-circuit-limiting mode of operation of the circuit of Fig. 5
  • Fig. 7 output characteristic field of a MOSFET with a schematic representation of the linear region and the saturation region
  • Fig. 8a-8c theoretical gate voltages of the individual MOSFETs of a circuit according to the invention for different driver voltages (assuming a uniform linear voltage drop at constant R DSon )
  • Fig. 9 another embodiment of a inventive circuit
  • Fig. 10 a switch-on process of the circuit of Fig. 9,
  • Fig. 11 a switch-off process of the circuit of Fig. 9,
  • Fig. 12 a unidirectional GaN component and a bidirectional GaN component which can be used for a circuit according to the invention.
  • Fig. 1 shows a diagram of an SSCB for protecting a low-voltage electrical circuit.
  • a mains-side neutral conductor connection NG, a mains-side phase conductor connection LG, a load-side neutral conductor connection NL and a load-side phase conductor connection LL are arranged in a housing GEH.
  • An energy source is connected to the mains side GRID and a consumer is connected to the load side LOAD.
  • the main components of the SSCB are a power supply unit NT, a control unit SE, an electronic interruption unit EU and a mechanical isolating contact unit MK.
  • the control unit SE switches on the electronic interruption unit EU, which is formed e.g.
  • the mechanical isolating contact unit MK comprises contacts KKN, KKL for opening/closing the phase and neutral conductors.
  • a current sensor unit SI in the path of the phase conductor a first voltage sensor unit SU1 for determining the level of the voltage between a network-side connection point EUG and a load-side connection point EUL of the electronic interruption unit EU and a second voltage sensor unit SU2 for determining the level of the voltage between the network-side neutral conductor connection NG and the network-side phase conductor connection LG are provided.
  • a central idea of the invention is to form a semiconductor switch from circuit modules connected in series.
  • Fig. 4a shows an embodiment of such a circuit module.
  • the module comprises a MOSFET M3 with a source connection source3, a gate connection Gate3 and a drain connection and a PNP bipolar transistor Q2 with an emitter connection, a base connection and a collector connection, the emitter connection being connected to the gate 202300630 10 connection Gate3 of the MOSFET M3 and the collector connection is connected to the source connection source3 of the MOSFET M3.
  • the gate connection Gate3 and the source connection source3 of the MOSFET M3 are connected to one another, and between these connections an (optional) diode D5 (preferably a Zener diode) is arranged, which blocks in the direction of the gate connection Gate3.
  • the base connection and the emitter connection of the PNP bipolar transistor Q2 are connected to one another, and in the connection a diode D4 is arranged, which blocks in the direction of the base connection.
  • the base connection of the PNP bipolar transistor Q2 is also connected to its collector connection, with a resistor R5 looped into the connection.
  • a connection from the base connection of the PNP bipolar transistor Q2 to a driver V2 is provided. This can be seen, for example, from Fig.
  • a semiconductor switch formed from modules connected in series is shown with a driver V2.
  • the driver V2 is connected to the PNP bipolar transistors Q1 - Q6 of six switch modules according to the invention connected in series.
  • a diode D1, D6, D7, D12, D14 and D16 is also inserted between the driver V2 and the base connections of the PNP bipolar transistors Q1 - Q6, which blocks in the direction of the driver V2.
  • the semiconductor switch is formed from an even number of modules, with the first half of the circuit modules being connected in series with the same switching direction and the second half of the circuit modules being connected in series with the opposite switching direction.
  • the semiconductor circuit module is shown twice, with the forward direction being different.
  • the semiconductor switch according to Fig. 5 is therefore made up of half modules according to Fig. 4a and half modules according to Fig. 4b.
  • the Zener diodes D5 and D18 in Fig. 5 are optional, as is the voltage limiter U1 (implemented by a TVS diode).
  • the driver 202300630 11 V2 is connected to the connection of the two circuit modules switched in opposite switching directions (source).
  • a resistor R2 or R6 is provided between this connection and the base connections of the PNP bipolar transistors of the two circuit modules.
  • a resistor R1 is introduced between the positive pole of the driver V2 and the connections of the switch modules in a forward direction.
  • a capacitor C1 - C6 and a voltage limiter U1 - U6 are also connected in parallel to the switch modules.
  • a voltage V1 and a load R3 fed from this voltage are also shown.
  • the following two points are relevant to the semiconductor switch structure according to Fig. 5: Firstly, it is a circuit for an alternating current flow (AC or DC with both current flow directions). For unipolar current flow, only half of the circuit shown would be required (i.e. only the modules with transistors in a forward direction). On the other hand, the modules close to the driver can in principle be designed without the transistors Q5 or Q6 for switching on.
  • the elements D13, D14, D17 and R17 or D15, D16, D18 and R10 can then also be omitted, so that the modules then only consist of the MOSFETs M1 or M4.
  • the driver voltage is selected appropriately, the circuit shown here has an intrinsic short-circuit current limitation, since a voltage drop is formed across the components connected in series depending on the load current. 202300630 12
  • the following calculation example will illustrate the idea behind it (see Fig. 6). In the figure, values are given at the top for a load current of 100A and at the bottom for a load current of 500A.
  • the driver voltage is 10V, which corresponds to the gate voltage V Gate1 of the MOSFET M1 (relative to the source or the marked "reference point gate unit").
  • Fig. 7 shows the linear region and the saturation region of a typical MOSFET.
  • the current I DS flowing through the MOSFET is shown as a function of the voltage drop between drain and source.
  • U th is the threshold voltage U th above which the MOSFET becomes conductive.
  • the value of the current I DS above which a MOSFET operates in the saturation region therefore depends on the gate voltage U GS and is lower the lower the gate voltage U GS is.
  • the parameters are selected so that the MOSFETs M1 and M2 (with gate voltages of 10V and 8.05V) (still) operate in the linear region, but MOSFET M3 with a gate voltage of 6.1V no longer does so.
  • this series connection can carry the current without a significant increase in the on-resistance RDSon. 202300630 13 would.
  • the top MOSFET in the series circuit is no longer in the linear region of its characteristic curve, as illustrated in Fig. 7.
  • this MOSFET M3 builds up voltage and reduces the driving voltage by its avalanche voltage or to the voltage of the associated voltage-limiting network (e.g. TVS diode with 120V limiting voltage). If the counter voltage built up is equal to the driving voltage, then the current increase is zero, even in a short circuit.
  • the switch arrangement now intrinsically limits the current, and in a short circuit it also limits the short-circuit current. This is of course accompanied by losses in the MOSFET and the overvoltage network - but the switch and the TVS diode can withstand this for a few ⁇ s, and this is precisely the time required to keep the requirements for short-circuit current detection and shutdown low or within an acceptable range.
  • the individual MOSFETs or switch modules are numbered.
  • the list corresponds to an increasing distance from the driver, ie the data in the first row corresponds to the MOSFET closest to the driver (in 202300630 14 Fig. 5 e.g. MOSFET M1), the data in the second row for the following MOSFET (in Fig. 5 e.g. MOSFET M2) etc.
  • Columns 2-5 list the gate voltages U GS for different load currents (50A, 100A, 200A and 400A).
  • the last row lists the total nominal on-resistance RDSon of the MOSFETs according to number (ie number according to first column multiplied by the on-resistance RDSon of 3.9m ⁇ , e.g.
  • Fig. 8a - Fig. 8c show that there are two parameters with which a short-circuit voltage limitation can be defined, namely the number of MOSFETs or circuit modules and the level of the driver voltage.
  • One possible strategy is to select the number of circuit modules for a rough setting or for a possible range of values of the short-circuit voltage and to make a fine adjustment using the driver voltage.
  • the inventive concept can be implemented in various ways in terms of circuitry. This is illustrated below using a further exemplary embodiment. 202300630 15 Fig.
  • FIG. 4c shows another possible structure of a circuit module according to the invention.
  • a switch according to the invention can be constructed using switch modules of this type. This is shown in Fig. 9.
  • the series connection according to the invention in Fig. 9 comprises two circuit modules corresponding to Fig. 4c with a simple control circuit using only one driver circuit and only one necessary driver power supply.
  • the pulse voltage source V2 is connected via the resistor R1 to two functional units which are constructed identically.
  • the upper functional unit (corresponding to Fig. 4c) has a protective diode D6, via which the resistor R1 is connected to the functional unit and which only allows current in the direction of the functional unit.
  • a PNP bipolar transistor Q2 is connected downstream of the diode D6, ie its emitter, base and collector, with a further diode D4 connected to the emitter and a resistor R5 connected to the collector of the PNP bipolar transistor Q2.
  • the emitter is connected to the gate connection Gate3 of an N-channel metal oxide semiconductor field effect transistor or N-channel MOSFET M3, the collector to the source connection source3 of the MOSFET M3.
  • Another N-channel MOSFET M6 with the opposite conduction direction is connected in series with the MOSFET M3, with the gate connection Gate3 and the source connection source3 of the MOSFETs M3 and M6 corresponding to one another.
  • the drain connection Drain2 of the MOSFET M6 is connected to another functional unit connected in series.
  • An overvoltage protection or overvoltage limiter U1 (e.g. in the form of a suppressor diode or a varistor) is connected in parallel to the MOSFETs M3 and M6, which is connected to the drain connections Drain3 and Drain2 of the MOSFETs M3 and M2.
  • the further functional unit has an identical structure to the first functional unit, whereby the elements D1, D2, R4, 202300630 16 Q1, Gate2, source2, M2, M7 and U2 of the second functional unit correspond to the elements D6, D4, R5, Q2, Gate3, source3, M3, M6 and U1 of the first functional unit.
  • the drain connection of MOSFET M7 is connected to the load (load resistor Rload), which is fed by the voltage V1 that drops across the functional units and the load resistor.
  • the operation of the circuit shown in Fig. 9 is explained below. If the signal from the pulse source is V20V or negative (e.g. -15V), then the Gate20V connection is applied to the source2 connection and the Gate30V connection is applied to the source3 connection.
  • the functional units (MOSFETs) connected in series are therefore switched off. If a positive voltage is applied to the Drain3 connection, MOSFETs M2 and M3 are blocked, while MOSFETs M6 and M7 are conductive (due to the freewheeling diode or body diode of the MOSFETs, or when using IGBTs, the anti-parallel diode is then mandatory).
  • MOSFETs M6 and M7 are blocked; MOSFETs M3 and M4 are then conductive.
  • the load resistance Rload is much greater than the channel resistance RDSon, then the vast majority of the voltage drops across the load, the voltage drop across the resistance RDSon is very small, for the explanation of the operation of this circuit 202300630 17 negligible.
  • the voltage across the MOSFET therefore collapses, drain has the potential of source. This means that the source of the upper switch (source3) now also has the potential of the source of the lower switch (source2).
  • the diodes D6 and D4 become conductive, the gate connection Gate3 becomes positive relative to the gate connection source3.
  • the MOSFETs M3 and M6 switch on. Now the entire path between the drain connection Drain3 and the load is conductive. The series connection of the MOSFETs is switched on.
  • the series connection becomes high-resistance, the voltage drop across the resistor RLast becomes negligible.
  • Relevant signal curves during the switch-off process are shown in Fig. 11.
  • the control signal at MOSFET M2 and, after a short time interval, that at MOSFET M3 are switched off, so that 202300630 18 the MOSFETs block.
  • the load current is switched off and no significant voltage drops across the load.
  • the diodes D1 and D2 and the PNP transistor Q1 of the circuit from Fig. 9 can be omitted without affecting the operation of the circuit (ultimately this means that the lower stage can also have a completely normal driver). However, they are advantageous for switching off all components connected in series as simultaneously as possible.
  • the structure is modular. Fig.
  • FIG. 4c shows the module, whereby the voltage limitation U1 can be omitted as long as the avalanche resistance of the components is sufficient to absorb the energy from overvoltages when switching on and off.
  • the modules can now be connected in series, whereby the decoupling diode D6 must be led to the driver output in each case, as already shown in Fig. 9 or for the other embodiment in Fig. 5.
  • this circuit for devices that intrinsically have a common drain structure, such as bidirectional GaN devices. Referring to Fig. 9, the MOSFETs M2 and M6 would merge into one device, a possible overvoltage limitation would then be between Source3 and Source2, the rest of the circuit would remain the same.
  • This circuit is also advantageous for a bidirectional GaN device in a single circuit, since it would elegantly solve the problem of the two existing gates at different potentials with the same approach, as shown in Fig. 12.

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Abstract

L'invention concerne un module commutateur pour un commutateur à semi-conducteurs et des commutateurs composés d'un montage en série de tels modules. Le module commutateur selon l'invention se compose d'un premier transistor (M3) comportant une borne de source (source3), une borne de gâchette (Gate3) et une borne de drain. De plus, ledit module commutateur comprend un second transistor (Q2) comportant une borne de source, une borne de gâchette et une borne de drain, la borne de source étant reliée à la borne de gâchette (Gate3) du premier transistor (M3) et la borne de drain étant reliée à la borne de source (source3) du premier transistor (M3). En outre, il est prévu une liaison entre la borne de gâchette du second transistor (Q2) et un circuit d'attaque (V2). L'invention permet de réaliser sans grande complexité technique et de manière flexible une unité d'interruption électronique à limitation intrinsèque du courant de court-circuit.
PCT/EP2023/086933 2023-01-11 2023-12-20 Module de circuit et commutateur à semi-conducteurs comportant une pluralité de modules de circuit montés en série WO2024149587A1 (fr)

Applications Claiming Priority (2)

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DE102023200167.5A DE102023200167A1 (de) 2023-01-11 2023-01-11 Schaltungsmodul und Halbleiterschalter mit einer Mehrzahl von in Reihe geschalteten Schaltungsmodulen
DE102023200167.5 2023-01-11

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WO2024149587A1 true WO2024149587A1 (fr) 2024-07-18

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004049571A1 (fr) * 2002-11-28 2004-06-10 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Dispositif de commutation a semiconducteurs destine a la commande d'une tension elevee ou d'un courant d'intensite elevee
DE102013201562B4 (de) * 2012-01-31 2016-06-09 Infineon Technologies Austria Ag Kaskodeschaltung und verfahren zum betreiben derselben
WO2017078962A1 (fr) * 2015-11-02 2017-05-11 General Electric Company Système et procédé de commande de modules de commutation connectés en série

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2659810B1 (fr) 1990-03-16 1992-06-05 Merlin Gerin Interrupteur statique moyenne tension.
DE102006022158A1 (de) 2006-05-12 2007-11-15 Beckhoff Automation Gmbh Leistungsschaltung mit Kurzschlussschutzschaltung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004049571A1 (fr) * 2002-11-28 2004-06-10 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Dispositif de commutation a semiconducteurs destine a la commande d'une tension elevee ou d'un courant d'intensite elevee
DE102013201562B4 (de) * 2012-01-31 2016-06-09 Infineon Technologies Austria Ag Kaskodeschaltung und verfahren zum betreiben derselben
WO2017078962A1 (fr) * 2015-11-02 2017-05-11 General Electric Company Système et procédé de commande de modules de commutation connectés en série

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