WO2024138967A1 - Planar optocoupler isolation package structure and packaging process therefor - Google Patents

Planar optocoupler isolation package structure and packaging process therefor Download PDF

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Publication number
WO2024138967A1
WO2024138967A1 PCT/CN2023/089447 CN2023089447W WO2024138967A1 WO 2024138967 A1 WO2024138967 A1 WO 2024138967A1 CN 2023089447 W CN2023089447 W CN 2023089447W WO 2024138967 A1 WO2024138967 A1 WO 2024138967A1
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Prior art keywords
metal wiring
wiring layer
passivation layer
substrate
chip
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PCT/CN2023/089447
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French (fr)
Chinese (zh)
Inventor
姚玉峰
陶骞
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莱弗利科技(苏州)有限公司
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Publication of WO2024138967A1 publication Critical patent/WO2024138967A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure

Definitions

  • a planar optical coupling isolation packaging structure comprising:
  • the metal wiring layer includes a first metal wiring layer and a second metal wiring layer, and the first metal wiring layer is disposed between the first passivation layer and the second passivation layer.
  • Multi-channel transmission is easier to implement, realizing multi-channel signal transmission under optocoupler isolation and meeting the needs of multi-channel systems.
  • FIG. 1 is a schematic structural diagram of a planar optocoupler isolation packaging structure in a first embodiment.
  • FIG. 2 is a cross-sectional view of a planar optical coupling isolation packaging structure in the first embodiment.
  • FIGS 5-14 are process diagrams of the packaging process in the present invention.
  • FIG5 is a schematic diagram of the structure of the first substrate after packaging the transmitting chip, the transmitter, and the receiving chip in the present invention.
  • FIG. 9 is a schematic diagram of a structure after an optical lens is configured in one embodiment.
  • FIG. 10 is a schematic diagram of the structure after a metal connecting through hole is formed on the first substrate in another embodiment.
  • FIG. 11 is a schematic diagram of the structure after a third passivation layer and a second metal wiring layer are arranged under the first substrate in another embodiment.
  • FIG. 12 is a schematic diagram of the structure after an optical lens is configured, a second passivation layer is arranged above the first metal wiring layer, and a fourth passivation layer is arranged below the second metal wiring layer in another embodiment.
  • FIG. 13 is a schematic diagram of the structure after the metal frame is installed in another embodiment.
  • FIG. 14 is a schematic diagram of the packaged structure in another embodiment.
  • 110 transmitting chip
  • 120 transmitter
  • 130 receiving chip
  • 140 optical lens
  • 141 reflective layer
  • 142 enhanced optical lens
  • 210 first substrate; 211, metal connection through hole
  • 220 second substrate
  • 310 first passivation layer
  • 320 second passivation layer
  • 330 third passivation layer
  • 340 fourth passivation layer
  • 410 first metal wiring layer
  • 420 second metal wiring layer
  • 500 metal frame
  • 510 pin.
  • the optical coupling module includes a transmitting chip 110, a transmitter 120 that converts the current of the transmitting chip 110 into an optical signal, a receiving chip 130 that receives the optical signal emitted by the transmitter 120, and an optical lens 140 that realizes the reflection of the light emitted from the transmitter 120 to the receiving chip 130 to form an optical channel.
  • the optical coupling modules are 1 or more than 2 groups, and more than 2 groups of optical coupling modules are arranged side by side, so as to realize single-channel or multi-channel optical coupling isolation, and the optical isolation effect between channels is good.
  • the transmitting chip 110 has a driver circuit that can drive the transmitter 120 and control it to emit light.
  • the current signal of the transmitting chip 110 can have different magnitudes, intensities, and opening and closing frequencies, so as to transmit the signal to be transmitted to the transmitter 120 and convert it into different light signals.
  • the transmitter 120 is a light emitting diode (Light Emitting diode) or a laser transmitter (VCSEL, laser diode), which converts the current signal of the transmitting chip 110 into an optical signal, and enters the receiving chip 130 through reflection of the optical lens 140, thereby realizing signal transmission.
  • a light emitting diode Light Emitting diode
  • VCSEL laser transmitter
  • the first substrate 210 packages the transmitting chip 110, the transmitter 120, and the receiving chip 130 together, and the chip positions are relatively fixed to prevent erosion by moisture, dust or other environmental factors, so as to facilitate the connection of the RDL metal wiring layer.
  • first substrate 210 and the second substrate 220 are injection molding materials, preferably epoxy resin materials, to achieve better protection and isolation.
  • the optical lens 140 is a material with special optical design, which is generally transparent. With a special shape design, light can be reflected from the transmitter 120 to the receiving chip 130, thereby forming a good optical channel; the optical lens 140 can be in various shapes, such as spherical or elliptical.
  • the optical lens 140 is made of transparent epoxy resin or glass.
  • the passivation layer includes a first passivation layer 310 and a second passivation layer 320 disposed from bottom to top on the first substrate 210 , and a third passivation layer 330 and a fourth passivation layer 340 disposed from top to bottom under the first substrate 210 .
  • the metal wiring layer can be made into any shape to achieve interconnection of chips, including a first metal wiring layer 410 arranged between the first passivation layer 310 and the second passivation layer 320, and a second metal wiring layer 420 arranged between the third passivation layer 330 and the fourth passivation layer 340.
  • the second metal wiring layer 420 is a pad structure of different shapes, which avoids the use of bonding wires and reduces the complexity and cost of packaging; the second metal wiring layer 420 also includes a bonding pad for connecting the transmitting chip 110.
  • the optical coupling module further includes a reflective layer 141 plated on the outer side of the optical lens 140 to better reflect the light emitted by the emitter 120 .
  • the optical coupling module is disposed on the outside of the optical lens 140 and on the enhanced optical lens 142 on the inside of the second substrate 220 .
  • the enhanced optical lens 142 has a different refractive index from the optical lens 140 .
  • the outer boundary of the enhanced optical lens 142 is coated with a reflective material to better reflect the light emitted by the emitter 120 .
  • a transmitting chip 110 a transmitter 120 , and a receiving chip 130 are provided.
  • the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are packaged together through the first substrate 210 , and their positions are fixed.
  • a metal connecting through hole 211 is formed on the first substrate 210 ; a first passivation layer 310 and a third passivation layer 330 are disposed on and below the first substrate 210 , respectively.
  • a first metal wiring layer 410 is disposed above the first passivation layer 310 , and the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are connected to the first metal wiring layer 410 .
  • a second metal wiring layer 420 is disposed under the third passivation layer 330 , and the first metal wiring layer 410 is connected to the second metal wiring layer 420 via a metal connection via 211 to transmit the top chip signal to the bottom; a fourth passivation layer 340 is disposed under the second metal wiring layer 420 .
  • an optical lens 140 is formed above the first passivation layer 310 , covering the sensing areas of the transmitting chip 110 and the receiving chip 130 ; a reflective layer 141 is plated on the outside of the optical lens 140 or an enhanced optical lens 142 is configured; a second passivation layer 320 is arranged above the first metal wiring layer 410 to isolate the first metal wiring layer 410 .
  • a second passivation layer 320 is disposed above the first metal wiring layer 410 to isolate the first metal wiring layer 410 ; an optical lens 140 is formed above the second passivation layer 320 to cover the sensing areas of the transmitting chip 110 and the receiving chip 130 .
  • the second substrate 220 realizes the final packaging, and the transmitting chip 110, the transmitter 120, the receiving chip 130, the optical lens 140, the first passivation layer 310, and the second passivation layer 320 are packaged as a whole.
  • the overall structure after packaging is shown in FIG. 1 .
  • the second passivation layer 320 is provided with a notch 321 at the first metal wiring layer 410 , and the first metal wiring layer 410 is exposed to the outside, and chip signals are led out through bonding wires.
  • the second metal wiring layer 420 is a bonding pad for connecting the transmitting chip 110 .
  • the packaging process of the planar optical coupler isolation packaging structure of this embodiment is used to package the above-mentioned planar optical coupler isolation packaging structure, and includes the following steps:
  • a transmitting chip 110 a transmitter 120 , and a receiving chip 130 are provided.
  • the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are packaged together through the first substrate 210 , and their positions are fixed.
  • a metal connecting through hole 211 is formed on the first substrate 210 .
  • the first passivation layer 310 and the third passivation layer 330 are arranged on and below the first substrate 210 , respectively.
  • the first metal wiring layer 410 is arranged above the first passivation layer 310 to connect the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 to the first metal wiring layer 410 .
  • a second metal wiring layer 420 is disposed under the third passivation layer 330 .
  • the second metal wiring layer 420 is a pad connected to the transmitting chip 110 .
  • a fourth passivation layer 340 is disposed under the second metal wiring layer 420 .
  • an optical lens 140 is formed on the first passivation layer 310 , covering the sensing areas of the transmitting chip 110 and the receiving chip 130 ; a reflective layer 141 is plated on the outside of the optical lens 140 or an enhanced optical lens 142 is configured; a notch 321 is opened in the second passivation layer 320 at the first metal wiring layer 410 , and the first metal wiring layer 410 is exposed.
  • a metal frame 500 is provided, and the first metal wiring layer 410 is in the shape of a pad.
  • the first metal wiring layer 410 is connected to the pins 510 of the metal frame 500 through bonding wires to realize signal extraction.
  • the second substrate 220 encapsulates the transmitting chip 110, the transmitter 120, the receiving chip 130, the optical lens 140, the first passivation layer 310, the second passivation layer 320, the third passivation layer 330, the fourth passivation layer 340 and part of the metal frame 500 as a whole, exposing the pins.
  • the overall structure after encapsulation is shown in Figure 13.
  • the above-mentioned optocoupler isolation structure can also add capacitive isolation and inductive isolation structures while providing optocoupler isolation to achieve capacitive isolation and inductive isolation with higher integration. Any combination of the three or all of them can be packaged together to effectively isolate various interferences, making it suitable for more complex systems, such as self-powered systems, multi-channel systems, and bidirectional systems.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

The present invention relates to a planar optocoupler isolation package structure and a packaging process therefor. The package structure comprises optocoupler modules, a first substrate, a second substrate used for packaging the optocoupler modules together, metal wiring layers used for implementing mutual connection of chips, and passivation layers used for isolating the optocoupler modules from the metal wiring layers. Each optocoupler module comprises a transmitting chip, a transmitter, a receiving chip and an optical lens, and the passivation layers and the metal wiring layers are used for collectively connecting signals of the chips. Completely different from the structure of a conventional optocoupler device, the present invention may achieve single-channel or multi-channel optocoupler isolation, and has a good optical isolation effect between the channels, a small package structure size, high reliability, and low cost. Completely different from a conventional optocoupler packaging process, the present packaging process is simple, highly efficient, greatly reduces costs, and improves isolation reliability and isolation performance.

Description

一种平面光耦隔离封装结构及其封装工艺A planar optical coupling isolation packaging structure and packaging process thereof 技术领域Technical Field
本发明涉及半导体技术领域，尤其是一种平面光耦隔离封装结构及其封装工艺。The present invention relates to the field of semiconductor technology, and in particular to a planar optical coupling isolation packaging structure and a packaging process thereof.
背景技术Background technique
传统光耦封装工艺是先在金属框架上固晶，在金属框架上焊金线，在芯片和焊线上方及四周点上硅胶，在硅胶上方放置Kapton Tape，然后翻转固定LED芯片的金属框架，使LED正对下方芯片的PD，最后注塑成型，将输出引脚弯曲成型。The traditional optocoupler packaging process is to first fix the die on the metal frame, solder gold wires on the metal frame, apply silicone on and around the chip and solder wires, place Kapton Tape on top of the silicone, then flip the metal frame that fixes the LED chip so that the LED faces the PD of the chip below, and finally perform injection molding to bend the output pins into shape.
传统封装工艺中在芯片和焊线上方及四周点上硅胶为非标准工艺，上胶效率低；在硅胶上方放置Kapton Tape一般采用手动放置，效率低，Kapton Tape对材料要求比较高，导致成本高；翻转固定LED芯片的金属框架，使LED正对下方芯片的PD，该工艺也为非标准工艺，需要定制化的机器来执行，成本高，或手动翻转，效率低且良率低。传统封装工艺得到的光耦器件构造只能实现单通道光学耦合，无法满足多通道的市场需求。In the traditional packaging process, applying silicone on and around the chip and welding wire is a non-standard process with low gluing efficiency; placing Kapton Tape on the silicone is generally done manually, which is inefficient. Kapton Tape has high material requirements, resulting in high costs; flipping the metal frame that fixes the LED chip so that the LED faces the PD of the chip below is also a non-standard process that requires a customized machine to perform, which is costly, or manual flipping, which is inefficient and has low yield. The optocoupler device structure obtained by the traditional packaging process can only achieve single-channel optical coupling and cannot meet the market demand for multiple channels.
技术问题technical problem
本申请人针对上述现有生产技术中的缺点，提供一种平面光耦隔离封装结构及其封装工艺，从而实现单通道或多通道光耦隔离，通道之间光学隔离效果好，封装结构体积小，可靠性高，封装工艺简单，成本低，效率高。In view of the shortcomings of the above-mentioned existing production technology, the applicant provides a planar optocoupler isolation packaging structure and its packaging process, so as to realize single-channel or multi-channel optocoupler isolation, with good optical isolation effect between channels, small packaging structure, high reliability, simple packaging process, low cost and high efficiency.
技术解决方案Technical Solutions
本发明所采用的技术方案如下：The technical solution adopted by the present invention is as follows:
一种平面光耦隔离封装结构，包括：A planar optical coupling isolation packaging structure, comprising:
光耦合模块，包括发射芯片、把发射芯片的电流转化成光学信号的发射器、接收发射器发出光学信号的接收芯片、以及实现从发射器发出的光线反射到接收芯片形成光学通道的光学镜头；The optical coupling module includes a transmitting chip, a transmitter that converts the current of the transmitting chip into an optical signal, a receiving chip that receives the optical signal emitted by the transmitter, and an optical lens that realizes the reflection of the light emitted from the transmitter to the receiving chip to form an optical channel;
第一基材，将发射芯片、发射器、接收芯片封装在一起，且位置相对固定；The first substrate packages the transmitting chip, the transmitter, and the receiving chip together, and the positions are relatively fixed;
第二基材，将光耦合模块封装在一起；A second substrate, packaging the optical coupling module together;
金属布线层，实现芯片信号的互相连接；Metal wiring layer, which realizes the interconnection of chip signals;
钝化层，用于隔离光耦合模块与金属布线层。The passivation layer is used to isolate the optical coupling module from the metal wiring layer.
作为上述技术方案的进一步改进：As a further improvement of the above technical solution:
所述光耦合模块还包括镀在光学镜头外侧的反光层、或设置在光学镜头外侧且在第二基材内侧的增强光学镜头，增强光学镜头的外边界布设有反光材料涂层，更好地反射发射器发出的光线。The optical coupling module also includes a reflective layer plated on the outside of the optical lens, or an enhanced optical lens arranged on the outside of the optical lens and inside the second substrate. The outer boundary of the enhanced optical lens is coated with a reflective material coating to better reflect the light emitted by the transmitter.
所述钝化层包括自下而上设置在第一基材上方的第一钝化层和第二钝化层、设置在第一基材下方的第四钝化层；The passivation layer includes a first passivation layer and a second passivation layer arranged from bottom to top on the first substrate, and a fourth passivation layer arranged below the first substrate;
所述金属布线层包括第一金属布线层和第二金属布线层，第一金属布线层设置在第一钝化层与第二钝化层之间。The metal wiring layer includes a first metal wiring layer and a second metal wiring layer, and the first metal wiring layer is disposed between the first passivation layer and the second passivation layer.
所述钝化层还包括第三钝化层，第三钝化层设置在第一基材下方，第二金属布线层设置在第三钝化层和第四钝化层之间。The passivation layer further includes a third passivation layer, the third passivation layer is arranged below the first substrate, and the second metal wiring layer is arranged between the third passivation layer and the fourth passivation layer.
所述第二金属布线层设置在第一基材和第四钝化层之间，第一基材为具有激光活性添加剂的材料，第四钝化层实现对第二金属布线层的隔离保护。The second metal wiring layer is arranged between the first substrate and the fourth passivation layer. The first substrate is a material having a laser-active additive. The fourth passivation layer realizes isolation and protection for the second metal wiring layer.
所述第一基材上设置有把顶部芯片信号传输到底部的金属连接通孔，第一金属布线层和第二金属布线层通过金属连接通孔连接，以实现信号传输；The first substrate is provided with a metal connection through hole for transmitting the top chip signal to the bottom, and the first metal wiring layer and the second metal wiring layer are connected through the metal connection through hole to realize signal transmission;
所述第二金属布线层为焊盘结构，避免使用焊线；第二金属布线层还包括用于连接发射芯片的焊垫。The second metal wiring layer is a pad structure, avoiding the use of bonding wires; the second metal wiring layer also includes a bonding pad for connecting the transmitting chip.
所述第二钝化层位于第一金属布线层处设置有槽口，使得第一金属布线层裸露在外，便于从顶部引出信号。The second passivation layer is provided with a notch at the first metal wiring layer, so that the first metal wiring layer is exposed to the outside, which is convenient for leading out signals from the top.
还包括金属框架，第一金属布线层通过焊线与金属框架的引脚连接，实现信号的引出；It also includes a metal frame, and the first metal wiring layer is connected to the pins of the metal frame through welding wires to realize signal extraction;
所述第二金属布线层为焊垫，用于连接发射芯片。The second metal wiring layer is a pad for connecting the transmitting chip.
一种平面光耦隔离封装结构的封装工艺，用于封装上述平面光耦隔离封装结构，包括以下步骤：A packaging process for a planar optical coupler isolation packaging structure, used for packaging the planar optical coupler isolation packaging structure, comprises the following steps:
提供发射芯片、发射器、接收芯片；Provide transmitting chips, transmitters, and receiving chips;
通过第一基材将发射芯片、发射器、接收芯片封装在一起，且位置固定；The transmitting chip, the transmitter, and the receiving chip are packaged together through the first substrate and the positions are fixed;
第一基材上形成金属连接通孔；Forming a metal connecting through hole on the first substrate;
第一基材上方布设第一钝化层；A first passivation layer is disposed on the first substrate;
在第一钝化层上方布设第一金属布线层，将发射芯片、发射器、接收芯片连接至第一金属布线层；Arrange a first metal wiring layer above the first passivation layer, and connect the transmitting chip, the transmitter, and the receiving chip to the first metal wiring layer;
布设第二金属布线层，第二金属布线层下方布设第四钝化层；Laying out a second metal wiring layer, and laying out a fourth passivation layer below the second metal wiring layer;
形成光学镜头，覆盖发射芯片与接收芯片的感应区域；An optical lens is formed to cover the sensing area of the transmitting chip and the receiving chip;
光学镜头外侧镀一层反光层或配置增强光学镜头；The outer side of the optical lens is coated with a reflective layer or equipped with an enhanced optical lens;
第一金属布线层上方布设第二钝化层，用于隔离第一金属布线层；A second passivation layer is arranged above the first metal wiring layer to isolate the first metal wiring layer;
第二基材实现最终封装。The second substrate completes the final encapsulation.
作为上述技术方案的进一步改进：As a further improvement of the above technical solution:
所述第一金属布线层与第二金属布线层通过金属连接通孔连接，实现顶部芯片信号传输到底部；The first metal wiring layer is connected to the second metal wiring layer through metal connection vias to achieve signal transmission from the top chip to the bottom;
第二基材将发射芯片、发射器、接收芯片、光学镜头、第一钝化层、第二钝化层整体封装。The second substrate encapsulates the transmitting chip, the transmitter, the receiving chip, the optical lens, the first passivation layer and the second passivation layer as a whole.
所述第二钝化层位于第一金属布线层处设置有槽口，第一金属布线层裸露在外；The second passivation layer is provided with a notch at the first metal wiring layer, and the first metal wiring layer is exposed;
提供金属框架，第一金属布线层为焊盘的形状，第一金属布线层通过焊线与金属框架的引脚连接，实现信号的引出；A metal frame is provided, wherein the first metal wiring layer is in the shape of a pad, and the first metal wiring layer is connected to the pins of the metal frame through a bonding wire to realize signal extraction;
第二基材将发射芯片、发射器、接收芯片、光学镜头、钝化层及部分金属框架整体封装。The second substrate encapsulates the transmitting chip, the transmitter, the receiving chip, the optical lens, the passivation layer and part of the metal frame as a whole.
有益效果Beneficial Effects
本发明的有益效果如下：The beneficial effects of the present invention are as follows:
本发明与传统光耦器件的构造完全不同，能够实现单通道或多通道光耦隔离，通道之间光学隔离效果好，封装结构体积小，可靠性高，成本低；与传统的光耦工艺完全不同，封装工艺简单，效率高，极大地降低成本，并提高隔离的可靠性和隔离性能。The structure of the present invention is completely different from that of traditional optocoupler devices, and can realize single-channel or multi-channel optocoupler isolation, with good optical isolation effect between channels, small packaging structure, high reliability and low cost; completely different from traditional optocoupler process, the packaging process is simple and efficient, which greatly reduces the cost and improves the reliability and isolation performance of isolation.
本发明还包括如下优点：The present invention also includes the following advantages:
（1）不同光学通道之间可以通过光学镜头的结构实现隔离，也可以简单通过基材实现隔离，这是传统的光耦封装非常难以实现的；第一基材将接收芯片、发射器、发射芯片封装起来，以防止水分，灰尘或其他环境因素的侵蚀，同时固定好芯片的相对位置，以方便RDL金属布线层进行连接；第二基材把钝化层、光耦合模块及第一基材全部封装在一起，且为不透明材质，在隔离保护的同时将光学镜头覆盖，起到反光的效果。(1) Different optical channels can be isolated through the structure of optical lenses, or simply through substrates, which is very difficult to achieve with traditional optocoupler packaging. The first substrate encapsulates the receiving chip, transmitter, and transmitting chip to prevent erosion by moisture, dust or other environmental factors, and fixes the relative position of the chips to facilitate the connection of the RDL metal wiring layer. The second substrate encapsulates the passivation layer, optical coupling module and the first substrate together, and is made of opaque material. It covers the optical lens while isolating and protecting it, achieving a reflective effect.
（2）通过RDL金属布线层和TMV金属连接通孔，实现信号连接，避免使用焊线，极大地缩小整个封装的体积，整个封装的厚度更薄，有效地降低成本，且由于RDL和TMV能很好地与芯片连接，增加信号的可靠性，也减少由于信号的电感（inductance)带来的噪声。(2) Signal connection is achieved through the RDL metal wiring layer and TMV metal connection through-holes, avoiding the use of welding wires, greatly reducing the volume of the entire package, and the thickness of the entire package is thinner, effectively reducing costs. In addition, since RDL and TMV can be well connected to the chip, the reliability of the signal is increased, and the noise caused by the inductance of the signal is also reduced.
（3）通过基材实现隔离，基材采用注塑材料，可以实现更远的隔离距离和更高的隔离性能。(3) Isolation is achieved through the substrate. The substrate is made of injection molding material, which can achieve a longer isolation distance and higher isolation performance.
（4）多通道传输更容易实现，实现光耦隔离情况下的多通道信号传输，满足多通道系统的需求。(4) Multi-channel transmission is easier to implement, realizing multi-channel signal transmission under optocoupler isolation and meeting the needs of multi-channel systems.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为第一实施例中平面光耦隔离封装结构的结构示意图。FIG. 1 is a schematic structural diagram of a planar optocoupler isolation packaging structure in a first embodiment.
图2为第一实施例中平面光耦隔离封装结构的剖视图。FIG. 2 is a cross-sectional view of a planar optical coupling isolation packaging structure in the first embodiment.
图3为第二实施例中平面光耦隔离封装结构的剖视图。FIG. 3 is a cross-sectional view of a planar optical coupling isolation packaging structure in a second embodiment.
图4为第三实施例中平面光耦隔离封装结构的剖视图。FIG. 4 is a cross-sectional view of a planar optical coupling isolation packaging structure in a third embodiment.
图5-14为本发明中封装工艺的过程图。其中：Figures 5-14 are process diagrams of the packaging process in the present invention.
图5为本发明中第一基材将发射芯片、发射器、接收芯片封装后的结构示意图。FIG5 is a schematic diagram of the structure of the first substrate after packaging the transmitting chip, the transmitter, and the receiving chip in the present invention.
图6为一个实施例中第一基材上形成金属连接通孔、布设第一钝化层及第三钝化层后的结构示意图。FIG. 6 is a schematic diagram of the structure after a metal connecting through hole is formed on the first substrate and a first passivation layer and a third passivation layer are laid out in one embodiment.
图7为一个实施例中第一钝化层上方布设第一金属布线层后的结构示意图。FIG. 7 is a schematic diagram of a structure after a first metal wiring layer is disposed on the first passivation layer in one embodiment.
图8为一个实施例中第三钝化层下方布设第二金属布线层后的结构示意图。FIG. 8 is a schematic diagram of the structure after a second metal wiring layer is arranged under the third passivation layer in one embodiment.
图9为一个实施例中配置光学透镜后的结构示意图。FIG. 9 is a schematic diagram of a structure after an optical lens is configured in one embodiment.
图10为另一个实施例中中第一基材上形成金属连接通孔后的结构示意图。FIG. 10 is a schematic diagram of the structure after a metal connecting through hole is formed on the first substrate in another embodiment.
图11为另一个实施例中第一基材下方布设第三钝化层、第二金属布线层后的结构示意图。FIG. 11 is a schematic diagram of the structure after a third passivation layer and a second metal wiring layer are arranged under the first substrate in another embodiment.
图12为另一个实施例中配置光学透镜、第一金属布线层上方布设第二钝化层及第二金属布线层下方布设第四钝化层后的结构示意图。12 is a schematic diagram of the structure after an optical lens is configured, a second passivation layer is arranged above the first metal wiring layer, and a fourth passivation layer is arranged below the second metal wiring layer in another embodiment.
图13为另一个实施例中安装金属框架后的结构示意图。FIG. 13 is a schematic diagram of the structure after the metal frame is installed in another embodiment.
图14为另一个实施例中封装后的结构示意图。FIG. 14 is a schematic diagram of the packaged structure in another embodiment.
其中：110、发射芯片；120、发射器；130、接收芯片；140、光学镜头；141、反光层；142、增强光学镜头； 210、第一基材；211、金属连接通孔；220、第二基材；310、第一钝化层；320、第二钝化层；321、槽口；330、第三钝化层；340、第四钝化层；410、第一金属布线层；420、第二金属布线层；500、金属框架；510、引脚。Among them: 110, transmitting chip; 120, transmitter; 130, receiving chip; 140, optical lens; 141, reflective layer; 142, enhanced optical lens; 210, first substrate; 211, metal connection through hole; 220, second substrate; 310, first passivation layer; 320, second passivation layer; 321, notch; 330, third passivation layer; 340, fourth passivation layer; 410, first metal wiring layer; 420, second metal wiring layer; 500, metal frame; 510, pin.
本发明的最佳实施方式Best Mode for Carrying Out the Invention
下面结合附图，说明本发明的具体实施方式。The specific implementation of the present invention is described below in conjunction with the accompanying drawings.
如图1和2所示，本实施例的平面光耦隔离封装结构，包括光耦合模块、第一基材210、将光耦合模块封装在一起的第二基材220、实现芯片的互相连接的金属布线层、用于隔离光耦合模块与金属布线层的钝化层；钝化层与金属布线层一起对芯片的信号进行连接。As shown in FIGS. 1 and 2 , the planar optocoupler isolation packaging structure of the present embodiment includes an optical coupling module, a first substrate 210, a second substrate 220 for packaging the optical coupling module, a metal wiring layer for interconnecting the chips, and a passivation layer for isolating the optical coupling module from the metal wiring layer; the passivation layer and the metal wiring layer together connect the chip signals.
光耦合模块包括发射芯片110、把发射芯片110的电流转化成光学信号的发射器120、接收发射器120发出光学信号的接收芯片130、以及实现从发射器120发出的光线反射到接收芯片130形成光学通道的光学镜头140。The optical coupling module includes a transmitting chip 110, a transmitter 120 that converts the current of the transmitting chip 110 into an optical signal, a receiving chip 130 that receives the optical signal emitted by the transmitter 120, and an optical lens 140 that realizes the reflection of the light emitted from the transmitter 120 to the receiving chip 130 to form an optical channel.
光耦合模块为1组或2组以上，2组以上光耦合模块并排布设，从而实现单通道或多通道光耦隔离，通道之间光学隔离效果好。The optical coupling modules are 1 or more than 2 groups, and more than 2 groups of optical coupling modules are arranged side by side, so as to realize single-channel or multi-channel optical coupling isolation, and the optical isolation effect between channels is good.
发射芯片110上面有驱动电路（driver circuitry)，可以驱动发射器120，控制其进行发光，发射芯片110的电流信号可以有不同的大小强度、开合频率，从而把要传输的信号传给发射器120，转化为不同的光信号。The transmitting chip 110 has a driver circuit that can drive the transmitter 120 and control it to emit light. The current signal of the transmitting chip 110 can have different magnitudes, intensities, and opening and closing frequencies, so as to transmit the signal to be transmitted to the transmitter 120 and convert it into different light signals.
发射器120是发光二极管（Light Emitting diode），或者激光发射器（VCSEL， laser diode)，把发射芯片110的电流信号转化成光学信号，并且通过光学镜头140的反射进入到接收芯片130里面，从而实现信号的传输。The transmitter 120 is a light emitting diode (Light Emitting diode) or a laser transmitter (VCSEL, laser diode), which converts the current signal of the transmitting chip 110 into an optical signal, and enters the receiving chip 130 through reflection of the optical lens 140, thereby realizing signal transmission.
接收芯片130为独立的二极管感光器件（discrete photodiode IC)，或是具有感光二极管（photodiode)的集成芯片。它的主要作用是接受发射器120发过来的光学信号，并进行一定的放大，滤波甚至数模转化。The receiving chip 130 is a discrete photodiode IC or an integrated chip with a photodiode. Its main function is to receive the optical signal sent by the transmitter 120 and perform a certain amount of amplification, filtering and even digital-to-analog conversion.
第一基材210将发射芯片110、发射器120、接收芯片130封装在一起，且芯片位置相对固定；以防止水分，灰尘或其他环境因素的侵蚀，以方便RDL金属布线层进行连接。The first substrate 210 packages the transmitting chip 110, the transmitter 120, and the receiving chip 130 together, and the chip positions are relatively fixed to prevent erosion by moisture, dust or other environmental factors, so as to facilitate the connection of the RDL metal wiring layer.
第二基材220为不透明的，颜色可以是白色或者其他颜色；通过覆盖在光学镜头140上面，可以起到反光的效果。The second substrate 220 is opaque and may be white or other colors; by covering the optical lens 140 , a reflective effect may be achieved.
进一步的，第一基材210和第二基材220为注塑材料，优选为环氧树脂材料，实现更好地保护隔离作用。Furthermore, the first substrate 210 and the second substrate 220 are injection molding materials, preferably epoxy resin materials, to achieve better protection and isolation.
进一步的，光学镜头140（Optical lens）是经过特殊光学设计的材料，一般是透明的，经过特殊的形状设计，光线可以从发射器120反射到接收芯片130上面，从而形成良好的光学通道；光学镜头140可以是多种形状，比如球形或者椭圆形。Furthermore, the optical lens 140 is a material with special optical design, which is generally transparent. With a special shape design, light can be reflected from the transmitter 120 to the receiving chip 130, thereby forming a good optical channel; the optical lens 140 can be in various shapes, such as spherical or elliptical.
在一个实施例中，光学镜头140为透明的环氧树脂或是玻璃材料。In one embodiment, the optical lens 140 is made of transparent epoxy resin or glass.
钝化层包括自下而上设置在第一基材210上方的第一钝化层310和第二钝化层320、自上而下设置在第一基材210下方的第三钝化层330和第四钝化层340。The passivation layer includes a first passivation layer 310 and a second passivation layer 320 disposed from bottom to top on the first substrate 210 , and a third passivation layer 330 and a fourth passivation layer 340 disposed from top to bottom under the first substrate 210 .
金属布线层可以做成任意的形状，从而实现芯片的互相连接，包括设置在第一钝化层310与第二钝化层320之间的第一金属布线层410、设置在第三钝化层330与第四钝化层340之间的第二金属布线层420。The metal wiring layer can be made into any shape to achieve interconnection of chips, including a first metal wiring layer 410 arranged between the first passivation layer 310 and the second passivation layer 320, and a second metal wiring layer 420 arranged between the third passivation layer 330 and the fourth passivation layer 340.
在一个实施例中，钝化层包括自下而上设置在第一基材210上方的第一钝化层310和第二钝化层320、设置在第一基材210下方的第四钝化层340；金属布线层第一金属布线层410和第二金属布线层420，第一金属布线层410设置在第一钝化层310与第二钝化层320之间，第二金属布线层420设置在第一基材210和第四钝化层340之间，第一基材210为具有激光活性添加剂的材料，第四钝化层340实现对第二金属布线层420的隔离保护。In one embodiment, the passivation layer includes a first passivation layer 310 and a second passivation layer 320 arranged from bottom to top above the first substrate 210, and a fourth passivation layer 340 arranged below the first substrate 210; a first metal wiring layer 410 and a second metal wiring layer 420, the first metal wiring layer 410 is arranged between the first passivation layer 310 and the second passivation layer 320, the second metal wiring layer 420 is arranged between the first substrate 210 and the fourth passivation layer 340, the first substrate 210 is a material with laser-active additives, and the fourth passivation layer 340 realizes isolation protection for the second metal wiring layer 420.
在一个实施例中，第一基材210上设置有用于把顶部芯片信号传输到底部的金属连接通孔211，是一种特别的填满金属连接的通孔，实现第一金属布线层410和第二金属布线层420的连接，进而实现信号传输；金属连接通孔211两端分别穿过第一钝化层310和第三钝化层330，把芯片的信号从顶部转移到底部，通过这种方法，整个封装避免了使用焊线，这样有助于极大的缩小整个封装的体积，并有效地降低成本。而且由于金属布线层和金属连接通孔能很好的与芯片进行连接，增加了信号的可靠性，也减少由于信号的电感（inductance)带来的噪声。In one embodiment, the first substrate 210 is provided with a metal connection through hole 211 for transmitting the top chip signal to the bottom. The metal connection through hole 211 is a special through hole filled with metal connection, which realizes the connection between the first metal wiring layer 410 and the second metal wiring layer 420, and then realizes signal transmission; the two ends of the metal connection through hole 211 pass through the first passivation layer 310 and the third passivation layer 330 respectively, and the chip signal is transferred from the top to the bottom. In this way, the entire package avoids the use of bonding wires, which helps to greatly reduce the volume of the entire package and effectively reduce costs. In addition, since the metal wiring layer and the metal connection through hole can be well connected to the chip, the reliability of the signal is increased, and the noise caused by the inductance of the signal is also reduced.
第二金属布线层420为不同形状的焊盘结构，避免使用焊线，降低了封装的复杂性和成本；第二金属布线层420还包括用于连接发射芯片110的焊垫。The second metal wiring layer 420 is a pad structure of different shapes, which avoids the use of bonding wires and reduces the complexity and cost of packaging; the second metal wiring layer 420 also includes a bonding pad for connecting the transmitting chip 110.
光耦合模块还包括镀在光学镜头140外侧的反光层141，更好地反射发射器120发出的光线。The optical coupling module further includes a reflective layer 141 plated on the outer side of the optical lens 140 to better reflect the light emitted by the emitter 120 .
如图3所示，在一个实施例中，光耦合模块设置在光学镜头140外侧且在第二基材220内侧的增强光学镜头142，增强光学镜头142与光学镜头140的折射率不同，增强光学镜头142的外边界布设有反光材料涂层，更好地反射发射器120发出的光线。As shown in FIG3 , in one embodiment, the optical coupling module is disposed on the outside of the optical lens 140 and on the enhanced optical lens 142 on the inside of the second substrate 220 . The enhanced optical lens 142 has a different refractive index from the optical lens 140 . The outer boundary of the enhanced optical lens 142 is coated with a reflective material to better reflect the light emitted by the emitter 120 .
如图5-9所示，本实施例的平面光耦隔离封装结构的封装工艺，用于封装上述平面光耦隔离封装结构，包括以下步骤：As shown in FIGS. 5-9 , the packaging process of the planar optical coupler isolation packaging structure of this embodiment is used to package the above-mentioned planar optical coupler isolation packaging structure, and includes the following steps:
提供发射芯片110、发射器120、接收芯片130。A transmitting chip 110 , a transmitter 120 , and a receiving chip 130 are provided.
如图5所示，通过第一基材210将发射芯片110、发射器120、接收芯片130封装在一起，且位置固定。As shown in FIG. 5 , the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are packaged together through the first substrate 210 , and their positions are fixed.
如图6所示，第一基材210上形成金属连接通孔211；第一基材210上、下方分别布设第一钝化层310和第三钝化层330。As shown in FIG. 6 , a metal connecting through hole 211 is formed on the first substrate 210 ; a first passivation layer 310 and a third passivation layer 330 are disposed on and below the first substrate 210 , respectively.
如图7所示，在第一钝化层310上方布设第一金属布线层410，将发射芯片110、发射器120、接收芯片130连接至第一金属布线层410。As shown in FIG. 7 , a first metal wiring layer 410 is disposed above the first passivation layer 310 , and the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are connected to the first metal wiring layer 410 .
如图8所示，第三钝化层330下方布设第二金属布线层420，第一金属布线层410与第二金属布线层420通过金属连接通孔211连接，实现顶部芯片信号传输到底部；第二金属布线层420下方布设第四钝化层340。As shown in FIG8 , a second metal wiring layer 420 is disposed under the third passivation layer 330 , and the first metal wiring layer 410 is connected to the second metal wiring layer 420 via a metal connection via 211 to transmit the top chip signal to the bottom; a fourth passivation layer 340 is disposed under the second metal wiring layer 420 .
如图9所示，第一钝化层310上方形成光学镜头140，覆盖发射芯片110与接收芯片130的感应区域；光学镜头140外侧镀一层反光层141或配置增强光学镜头142；第一金属布线层410上方布设第二钝化层320，用于隔离第一金属布线层410。As shown in FIG9 , an optical lens 140 is formed above the first passivation layer 310 , covering the sensing areas of the transmitting chip 110 and the receiving chip 130 ; a reflective layer 141 is plated on the outside of the optical lens 140 or an enhanced optical lens 142 is configured; a second passivation layer 320 is arranged above the first metal wiring layer 410 to isolate the first metal wiring layer 410 .
在一个实施例中，第一金属布线层410上方布设第二钝化层320，用于隔离第一金属布线层410；第二钝化层320上方形成光学镜头140，覆盖发射芯片110与接收芯片130的感应区域。In one embodiment, a second passivation layer 320 is disposed above the first metal wiring layer 410 to isolate the first metal wiring layer 410 ; an optical lens 140 is formed above the second passivation layer 320 to cover the sensing areas of the transmitting chip 110 and the receiving chip 130 .
第二基材220实现最终封装，将发射芯片110、发射器120、接收芯片130、光学镜头140、第一钝化层310、第二钝化层320整体封装，封装后的整体结构，如图1所示。The second substrate 220 realizes the final packaging, and the transmitting chip 110, the transmitter 120, the receiving chip 130, the optical lens 140, the first passivation layer 310, and the second passivation layer 320 are packaged as a whole. The overall structure after packaging is shown in FIG. 1 .
如图4所示，在一个实施例中，第二钝化层320位于第一金属布线层410处设置有槽口321，第一金属布线层410裸露在外，通过焊线实现芯片信号的引出。As shown in FIG. 4 , in one embodiment, the second passivation layer 320 is provided with a notch 321 at the first metal wiring layer 410 , and the first metal wiring layer 410 is exposed to the outside, and chip signals are led out through bonding wires.
还包括金属框架500，第一金属布线层410通过焊线与金属框架500的引脚510连接，实现信号的引出。It also includes a metal frame 500, and the first metal wiring layer 410 is connected to the pins 510 of the metal frame 500 through welding wires to achieve signal extraction.
第二金属布线层420为焊垫，用于连接发射芯片110。The second metal wiring layer 420 is a bonding pad for connecting the transmitting chip 110 .
如图10-14所示，本实施例的平面光耦隔离封装结构的封装工艺，用于封装上述平面光耦隔离封装结构，包括以下步骤：As shown in FIGS. 10-14 , the packaging process of the planar optical coupler isolation packaging structure of this embodiment is used to package the above-mentioned planar optical coupler isolation packaging structure, and includes the following steps:
提供发射芯片110、发射器120、接收芯片130。A transmitting chip 110 , a transmitter 120 , and a receiving chip 130 are provided.
通过第一基材210将发射芯片110、发射器120、接收芯片130封装在一起，且位置固定。The transmitting chip 110 , the transmitter 120 , and the receiving chip 130 are packaged together through the first substrate 210 , and their positions are fixed.
如图10所示，第一基材210上形成金属连接通孔211。As shown in FIG. 10 , a metal connecting through hole 211 is formed on the first substrate 210 .
第一基材210上、下方分别布设第一钝化层310和第三钝化层330；在第一钝化层310上方布设第一金属布线层410，将发射芯片110、发射器120、接收芯片130连接至第一金属布线层410。The first passivation layer 310 and the third passivation layer 330 are arranged on and below the first substrate 210 , respectively. The first metal wiring layer 410 is arranged above the first passivation layer 310 to connect the transmitting chip 110 , the transmitter 120 , and the receiving chip 130 to the first metal wiring layer 410 .
如图11所示，第三钝化层330下方布设第二金属布线层420，第二金属布线层420为焊垫，连接发射芯片110，第二金属布线层420下方布设第四钝化层340。As shown in FIG. 11 , a second metal wiring layer 420 is disposed under the third passivation layer 330 . The second metal wiring layer 420 is a pad connected to the transmitting chip 110 . A fourth passivation layer 340 is disposed under the second metal wiring layer 420 .
如图12所示，第一钝化层310上方形成光学镜头140，覆盖发射芯片110与接收芯片130的感应区域；光学镜头140外侧镀一层反光层141或配置增强光学镜头142；第二钝化层320位于第一金属布线层410处开设槽口321，第一金属布线层410裸露在外。As shown in FIG12 , an optical lens 140 is formed on the first passivation layer 310 , covering the sensing areas of the transmitting chip 110 and the receiving chip 130 ; a reflective layer 141 is plated on the outside of the optical lens 140 or an enhanced optical lens 142 is configured; a notch 321 is opened in the second passivation layer 320 at the first metal wiring layer 410 , and the first metal wiring layer 410 is exposed.
如图13所示，提供金属框架500，第一金属布线层410为焊盘的形状，第一金属布线层410通过焊线与金属框架500的引脚510连接，实现信号的引出。As shown in FIG. 13 , a metal frame 500 is provided, and the first metal wiring layer 410 is in the shape of a pad. The first metal wiring layer 410 is connected to the pins 510 of the metal frame 500 through bonding wires to realize signal extraction.
第二基材220将发射芯片110、发射器120、接收芯片130、光学镜头140、第一钝化层310、第二钝化层320、第三钝化层330、第四钝化层340及部分金属框架500整体封装，露出引脚，封装后的整体结构，如图13所示。The second substrate 220 encapsulates the transmitting chip 110, the transmitter 120, the receiving chip 130, the optical lens 140, the first passivation layer 310, the second passivation layer 320, the third passivation layer 330, the fourth passivation layer 340 and part of the metal frame 500 as a whole, exposing the pins. The overall structure after encapsulation is shown in Figure 13.
上述光耦隔离结构在光耦隔离的同时，也可以增加电容隔离和电感隔离结构，实现电容隔离和电感隔离，集成度更高，将三者之中的任意组合或者全部封装在一起，有效地隔绝各种干扰，适用于更加复杂的系统，例如，自供电系统、多通道系统、双向系统。The above-mentioned optocoupler isolation structure can also add capacitive isolation and inductive isolation structures while providing optocoupler isolation to achieve capacitive isolation and inductive isolation with higher integration. Any combination of the three or all of them can be packaged together to effectively isolate various interferences, making it suitable for more complex systems, such as self-powered systems, multi-channel systems, and bidirectional systems.
以上描述是对本发明的解释，不是对发明的限定，本发明所限定的范围参见权利要求，在本发明的保护范围之内，可以作任何形式的修改。The above description is an explanation of the present invention, not a limitation of the present invention. The scope of the present invention is defined in the claims. Any form of modification may be made within the scope of protection of the present invention.

Claims (10)

  1. 一种平面光耦隔离封装结构，其特征在于，包括：A planar optical coupling isolation packaging structure, characterized by comprising:
    光耦合模块，包括发射芯片（110）、把发射芯片（110）的电流转化成光学信号的发射器（120）、接收发射器（120）发出光学信号的接收芯片（130）、以及实现从发射器（120）发出的光线反射到接收芯片（130）形成光学通道的光学镜头（140）；An optical coupling module, comprising a transmitting chip (110), a transmitter (120) for converting the current of the transmitting chip (110) into an optical signal, a receiving chip (130) for receiving the optical signal emitted by the transmitter (120), and an optical lens (140) for realizing reflection of light emitted from the transmitter (120) to the receiving chip (130) to form an optical channel;
    第一基材（210），将发射芯片（110）、发射器（120）、接收芯片（130）封装在一起，且位置相对固定；A first substrate (210) packages the transmitting chip (110), the transmitter (120), and the receiving chip (130) together, and the positions thereof are relatively fixed;
    第二基材（220），将光耦合模块封装在一起；A second substrate (220) is used to package the optical coupling module together;
    金属布线层，实现信号的互相连接；Metal wiring layer, which realizes the interconnection of signals;
    钝化层，用于隔离光耦合模块与金属布线层。The passivation layer is used to isolate the optical coupling module from the metal wiring layer.
  2. 如权利要求1所述的平面光耦隔离封装结构，其特征在于，所述光耦合模块还包括镀在光学镜头（140）外侧的反光层（141）、或设置在光学镜头（140）外侧且在第二基材（220）内侧的增强光学镜头（142），增强光学镜头（142）的外边界布设有反光材料涂层，更好地反射发射器（120）发出的光线。The planar optical coupling isolation packaging structure according to claim 1 is characterized in that the optical coupling module further comprises a reflective layer (141) plated on the outside of the optical lens (140), or an enhanced optical lens (142) arranged on the outside of the optical lens (140) and on the inside of the second substrate (220), and the outer boundary of the enhanced optical lens (142) is provided with a reflective material coating to better reflect the light emitted by the emitter (120).
  3. 如权利要求1所述的平面光耦隔离封装结构，其特征在于，所述钝化层包括自下而上设置在第一基材（210）上方的第一钝化层（310）和第二钝化层（320）、设置在第一基材（210）下方的第四钝化层（340）；The planar optical coupling isolation packaging structure according to claim 1, characterized in that the passivation layer comprises a first passivation layer (310) and a second passivation layer (320) arranged from bottom to top on the first substrate (210), and a fourth passivation layer (340) arranged below the first substrate (210);
    所述金属布线层包括第一金属布线层（410）和第二金属布线层（420），第一金属布线层（410）设置在第一钝化层（310）与第二钝化层（320）之间。The metal wiring layer comprises a first metal wiring layer (410) and a second metal wiring layer (420), and the first metal wiring layer (410) is arranged between the first passivation layer (310) and the second passivation layer (320).
  4. 如权利要求3所述的平面光耦隔离封装结构，其特征在于，所述钝化层还包括第三钝化层（330），第三钝化层（330）设置在第一基材（210）下方，第二金属布线层（420）设置在第三钝化层（330）和第四钝化层（340）之间。The planar optical coupling isolation packaging structure according to claim 3, characterized in that the passivation layer further comprises a third passivation layer (330), the third passivation layer (330) is arranged below the first substrate (210), and the second metal wiring layer (420) is arranged between the third passivation layer (330) and the fourth passivation layer (340).
  5. 如权利要求3所述的平面光耦隔离封装结构，其特征在于，所述第二金属布线层（420）设置在第一基材（210）和第四钝化层（340）之间，第一基材（210）为具有激光活性添加剂的材料，第四钝化层（340）实现对第二金属布线层（420）的隔离保护。The planar optical coupling isolation packaging structure according to claim 3 is characterized in that the second metal wiring layer (420) is arranged between the first substrate (210) and the fourth passivation layer (340), the first substrate (210) is a material with a laser-active additive, and the fourth passivation layer (340) realizes isolation protection for the second metal wiring layer (420).
  6. 如权利要求3所述的平面光耦隔离封装结构，其特征在于，所述第一基材（210）上设置有把顶部芯片信号传输到底部的金属连接通孔（211），第一金属布线层（410）和第二金属布线层（420）通过金属连接通孔（211）连接，以实现信号传输；The planar optical coupling isolation packaging structure according to claim 3, characterized in that the first substrate (210) is provided with a metal connection through hole (211) for transmitting the top chip signal to the bottom, and the first metal wiring layer (410) and the second metal wiring layer (420) are connected through the metal connection through hole (211) to realize signal transmission;
    所述第二金属布线层（420）为焊盘结构，避免使用焊线；第二金属布线层（420）还包括用于连接发射芯片（110）的焊垫。The second metal wiring layer (420) is a pad structure, avoiding the use of bonding wires; the second metal wiring layer (420) also includes a bonding pad for connecting the transmitting chip (110).
  7. 如权利要求3所述的平面光耦隔离封装结构，其特征在于，所述第二钝化层（320）位于第一金属布线层（410）处设置有槽口（321），第一金属布线层（410）裸露在外，以使得芯片信号从顶部引出。The planar optical coupling isolation packaging structure according to claim 3 is characterized in that the second passivation layer (320) is provided with a notch (321) at the first metal wiring layer (410), and the first metal wiring layer (410) is exposed to the outside so that the chip signal is led out from the top.
  8. 如权利要求7所述的平面光耦隔离封装结构，其特征在于，还包括金属框架（500），第一金属布线层（410）通过焊线与金属框架（500）的引脚（510）连接，实现信号的引出；The planar optical coupling isolation packaging structure according to claim 7, characterized in that it also includes a metal frame (500), and the first metal wiring layer (410) is connected to the pins (510) of the metal frame (500) through welding wires to achieve signal extraction;
    所述第二金属布线层（420）为焊垫，用于连接发射芯片（110）。The second metal wiring layer (420) is a bonding pad used for connecting the transmitting chip (110).
  9. 一种平面光耦隔离封装结构的封装工艺，其特征在于，用于封装权利要求1-8任一项所述的平面光耦隔离封装结构，包括以下步骤：A packaging process for a planar optical coupler isolation packaging structure, characterized in that it is used to package the planar optical coupler isolation packaging structure according to any one of claims 1 to 8, comprising the following steps:
    提供发射芯片（110）、发射器（120）、接收芯片（130）；Providing a transmitting chip (110), a transmitter (120), and a receiving chip (130);
    通过第一基材（210）将发射芯片（110）、发射器（120）、接收芯片（130）封装在一起，且位置固定；The transmitting chip (110), the transmitter (120), and the receiving chip (130) are packaged together through a first substrate (210), and the positions are fixed;
    第一基材（210）上形成金属连接通孔（211）；A metal connection through hole (211) is formed on the first substrate (210);
    第一基材（210）上方布设第一钝化层（310）；A first passivation layer (310) is disposed on the first substrate (210);
    在第一钝化层（310）上方布设第一金属布线层（410），将发射芯片（110）、发射器（120）、接收芯片（130）连接至第一金属布线层（410）；Arranging a first metal wiring layer (410) above the first passivation layer (310), and connecting the transmitting chip (110), the transmitter (120), and the receiving chip (130) to the first metal wiring layer (410);
    形成光学镜头（140），覆盖发射芯片（110）与接收芯片（130）的感应区域；An optical lens (140) is formed to cover the sensing areas of the transmitting chip (110) and the receiving chip (130);
    布设第二金属布线层（420），第二金属布线层（420）下方布设第四钝化层（340）；Laying out a second metal wiring layer (420), and laying out a fourth passivation layer (340) below the second metal wiring layer (420);
    光学镜头（140）外侧镀一层反光层（141）或配置增强光学镜头（142）；The outer side of the optical lens (140) is coated with a reflective layer (141) or is equipped with an enhanced optical lens (142);
    第一金属布线层（410）上方布设第二钝化层（320），用于隔离第一金属布线层（410）；A second passivation layer (320) is disposed above the first metal wiring layer (410) to isolate the first metal wiring layer (410);
    第二基材（220）实现最终封装。The second substrate (220) realizes the final packaging.
  10. 如权利要求9所述的平面光耦隔离封装结构的封装工艺，其特征在于，所述第二钝化层（320）位于第一金属布线层（410）处设置有槽口（321），使得第一金属布线层（410）裸露在外；The packaging process of the planar optical coupling isolation packaging structure according to claim 9, characterized in that the second passivation layer (320) is provided with a notch (321) at the first metal wiring layer (410), so that the first metal wiring layer (410) is exposed outside;
    提供金属框架（500），第一金属布线层（410）为焊盘的形状，第一金属布线层（410）通过焊线与金属框架（500）的引脚（510）连接，实现信号的引出；A metal frame (500) is provided, wherein the first metal wiring layer (410) is in the shape of a pad, and the first metal wiring layer (410) is connected to a pin (510) of the metal frame (500) via a welding wire to realize signal extraction;
    第二基材（220）将发射芯片（110）、发射器（120）、接收芯片（130）、光学镜头（140）、钝化层及部分金属框架（500）整体封装。The second substrate (220) encapsulates the transmitting chip (110), the transmitter (120), the receiving chip (130), the optical lens (140), the passivation layer and part of the metal frame (500) as a whole.
PCT/CN2023/089447 2022-12-26 2023-04-20 Planar optocoupler isolation package structure and packaging process therefor WO2024138967A1 (en)

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