WO2024130606A1 - Dispositif électroluminescent, écran d'affichage et appareil d'affichage - Google Patents

Dispositif électroluminescent, écran d'affichage et appareil d'affichage Download PDF

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WO2024130606A1
WO2024130606A1 PCT/CN2022/140806 CN2022140806W WO2024130606A1 WO 2024130606 A1 WO2024130606 A1 WO 2024130606A1 CN 2022140806 W CN2022140806 W CN 2022140806W WO 2024130606 A1 WO2024130606 A1 WO 2024130606A1
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light
layer
sub
substituted
emitting layer
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PCT/CN2022/140806
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Chinese (zh)
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高荣荣
王丹
陈磊
张东旭
黎俊聪
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京东方科技集团股份有限公司
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  • the present application relates to the field of display and lighting technology, and in particular to a light-emitting device, a display panel and a display apparatus.
  • OLED Organic Light-Emitting Diode
  • OLED has the characteristics of self-luminescence, does not require a backlight source, has a thin panel thickness and is light in weight. At the same time, OLED also has the advantages of wide viewing angle, high contrast, fast response time, wide operating temperature range and flexibility.
  • OLED technology has been successfully applied in the commercial flat panel display and lighting industry. Among them, stacked OLED devices play a vital role in the field of OLED display and lighting.
  • the luminous efficiency of stacked OLED is improved to a certain extent.
  • Stacked OLED devices usually use a connecting layer to connect multiple organic light-emitting units in series, so as to double or multiply the current efficiency and luminous brightness.
  • the connecting layer between the two light-emitting units of the stack is called the charge generation layer (CGL).
  • CGL charge generation layer
  • the performance of the charge generation layer will directly affect the photoelectric performance of the entire device. Therefore, the material type of the charge generation layer and the parameter matching relationship between the charge generation layer and other film layers inside the light-emitting device will affect the luminous efficiency and service life of the light-emitting device.
  • the present application proposes a light-emitting device, a display substrate and a display apparatus to solve the technical problems of low light-emitting efficiency or short service life of the light-emitting device in the prior art.
  • a light emitting device including:
  • Anode and cathode are arranged opposite to each other.
  • the light emitting unit is arranged between the anode and the cathode, and comprises a first light emitting unit and a second light emitting unit which are sequentially stacked along a first direction.
  • the charge generation layer is disposed between the first light emitting unit and the second light emitting unit.
  • the charge generation layer includes: a first charge generation layer and a second charge generation layer sequentially stacked along the first direction.
  • the first charge generation layer includes a first type of compound.
  • the second charge generation layer includes a second type of compound and a third type of compound.
  • the first direction is a direction from the anode to the cathode.
  • X1 - X8 are the same or different and are independently selected from nitrogen or R1 , and X1 - X8 contain at least 2 nitrogen atoms;
  • R1 is independently selected from hydrogen, deuterium, substituted or unsubstituted C1 - C60 alkyl, substituted or unsubstituted C2 - C60 alkenyl, substituted or unsubstituted C2 - C60 alkynyl, substituted or unsubstituted C1 - C60 alkoxy, substituted or unsubstituted C3 - C10 cycloalkyl, substituted or unsubstituted C1 - C10 heterocycloalkyl, substituted or unsubstituted C3 - C10 cycloalkenyl, substituted or unsubstituted C1 -C10 heterocycloalkenyl, substituted or unsubstituted C6 - C60 aryl, substituted or unsubstituted C
  • Ar 1 and Ar 2 are the same or different and are independently selected from the group consisting of hydrogen, deuterium, tritium, halogen, cyano, nitro, C 6 -C 60 aryl, a C 2 -C 60 heterocyclic group containing at least one heteroatom selected from O, N, S, Si and P, a condensed ring group of a C 3 -C 60 aliphatic ring and a C 6 -C 60 aromatic ring, a C 1 -C 50 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 30 alkoxy group, a C 6 -C 30 aryloxy group, a C 3 -C 60 alkylsilyl group, a C 18 -C 60 arylsilyl group and a C 8 -C 60 alkylarylsilyl group.
  • A can be O, S, C, N, Si.
  • L is a direct bond, independently selected from: substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted adamantane, substituted or unsubstituted heteroaryl.
  • the substitution of R 2 and R 3 is the same as that of R 1.
  • Ar 3 and Ar 4 are the same or different, and are independently selected from: substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted naphthalene, substituted or unsubstituted dibenzofuran, substituted or unsubstituted carbazole, substituted or unsubstituted fluorenyl.
  • A1 to A6 are each independently selected from: substituted or unsubstituted halogen, substituted or unsubstituted cyano, substituted or unsubstituted aldehyde, substituted or unsubstituted carbonyl, substituted or unsubstituted carboxyl, substituted or unsubstituted sulfonic acid, substituted or unsubstituted nitro, aryl substituted by electron withdrawing group, heteroaryl substituted by electron withdrawing group.
  • A0 can be a three-membered ring, a four-membered ring, a five-membered ring, or a six-membered ring.
  • the charge generation layer in the light-emitting device provided in the present application is composed of a second charge generation layer and a first charge generation layer superimposed on each other.
  • the heterocyclic compound shown in the general formula (I) provided in this embodiment when used as the material of the first charge generation layer, it has a lower LUMO energy level, which reduces the energy barrier at the interface between the first charge generation layer and the second charge generation layer, thereby inhibiting the degradation at the interface.
  • the heterocyclic compound shown in the general formula (I) has excellent electron transport capability, and based on the above structure, the heterocyclic compound can increase the electron mobility in the organic light-emitting device, and can prevent the light-emitting device from reducing the luminous efficiency under low current conditions.
  • the heterocyclic compound shown in the general formula (I) contains a large conjugated plane, and when it is used in the charge generation layer, it can effectively improve the electron transport characteristics.
  • the compound represented by the general formula (II) contains electron-rich aromatic amine and electron-rich dibenzo group, and can form conjugated ⁇ bonds with adjacent groups, so that the electrons in the molecule have high delocalization, and thus the material has high mobility to ensure rapid carrier transport. Therefore, when the compound represented by the general formula (II) is applied to the material of the second charge generation layer, the charge transport efficiency of the charge generation layer can be improved.
  • the third type of compound represented by the general formula (III) contains a large number of electron-withdrawing groups, and the third type of compound represented by the general formula (III) has a lower LUMO energy level.
  • the second type of compound represented by the general formula (II) and the third type of compound represented by the general formula (III) are mixed, the second type of compound generates holes, and the electron-withdrawing groups in the third type of compound absorb the HOMO unit in the second type of compound, so that the second type of compound and the third type of compound have a lower LUMO energy level after mixing, thereby facilitating the generation of charge.
  • the third type of compound represented by the general formula (III) contains a large number of electron-withdrawing groups, and the third type of compound represented by the general formula (III) has a lower LUMO energy level.
  • the second type of compound represented by the general formula (II) and the third type of compound represented by the general formula (III) are mixed, the second type of compound generates holes, and the electron-withdrawing groups in the third type of compound absorb the HOMO unit in the second type of compound, so that the second type of compound and the third type of compound have a lower LUMO energy level after mixing, thereby facilitating the generation of charge.
  • the first compound is selected from any one of the following structural formulas:
  • the second compound is selected from any one of the following structural formulas:
  • the third compound is selected from any one of the following structural formulas:
  • the first light-emitting unit includes: a hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer and a first hole blocking layer stacked in sequence along the first direction.
  • the absolute value of the difference between the LUMO energy level of the first charge generation layer and the LUMO energy level of the first hole blocking layer is less than or equal to 0.5 eV.
  • the second light-emitting unit includes: a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer and an electron transport layer stacked along the first direction.
  • the absolute value of the difference between the HOMO energy level of the second charge generation layer and the HOMO energy level of the second hole transport layer is less than or equal to 0.3 eV.
  • the charge generation layer has a dipole moment greater than 4 Debye.
  • the electron mobility of the first charge generation layer is greater than the electron mobility of the first hole blocking layer.
  • the hole mobility of the second charge generation layer is greater than the hole mobility of the second hole transport layer.
  • a ratio between the electron mobility of the first hole blocking layer and the electron mobility of the second hole blocking layer is greater than or equal to 0.1 and less than or equal to 10.
  • a ratio between a hole mobility of the first hole transport layer and a hole mobility of the second hole transport layer is greater than or equal to 0.1 and less than or equal to 10.
  • the light emitting device has a first light emitting area, a second light emitting area and a third light emitting area sequentially arranged along a second direction, and the second direction is perpendicular to the first direction.
  • the first light-emitting layer includes a first sub-light-emitting layer, a second sub-light-emitting layer and a third sub-light-emitting layer arranged in sequence along a second direction;
  • the second light-emitting layer includes a fourth sub-light-emitting layer, a fifth sub-light-emitting layer and a sixth sub-light-emitting layer arranged in sequence along the second direction; the second direction is perpendicular to the first direction;
  • the first sub-light emitting layer and the fourth sub-light emitting layer emit light of the same color, and an absolute value of a difference between a wavelength of light emitted by the first sub-light emitting layer and a wavelength of light emitted by the fourth sub-light emitting layer is less than or equal to 20 nm.
  • the second sub-light emitting layer and the fifth sub-light emitting layer emit light of the same color, and an absolute value of a difference between a wavelength of light emitted by the second light emitting layer and a wavelength of light emitted by the fifth sub-light emitting layer is less than or equal to 20 nm.
  • the third sub-light emitting layer and the sixth sub-light emitting layer emit light of the same color, and an absolute value of a difference in wavelength between the light emitted by the third sub-light emitting layer and the light emitted by the sixth sub-light emitting layer is less than or equal to 20 nm.
  • the first sub-light emitting layer, the second sub-light emitting layer and the third sub-light emitting layer respectively emit light of any one of three colors, the three colors including red, green and blue.
  • the fourth sub-light emitting layer, the fifth sub-light emitting layer and the sixth sub-light emitting layer respectively emit light of any one of three colors, the three colors including red, green and blue.
  • the first charge generation layer further includes an N-type dopant, and the N-type dopant may be selected from any one of alkali metals and oxides thereof, alkaline earth metals and oxides thereof, and transition metals and oxides thereof.
  • any one of the first sub-light-emitting layer, the second sub-light-emitting layer, the third sub-light-emitting layer, the fourth sub-light-emitting layer, the fifth sub-light-emitting layer and the sixth sub-light-emitting layer includes: a first host material and a second host material.
  • the first host material and the second host material constitute an exciplex.
  • the difference between the wavelength corresponding to the peak of the emission spectrum of the exciplex and the wavelength corresponding to the peak of the emission spectrum of the first host material is greater than or equal to 20nm, and the difference between the wavelength corresponding to the peak of the emission spectrum of the exciplex and the wavelength corresponding to the peak of the emission spectrum of the second host material is greater than or equal to 20nm.
  • the molecular spacing between the HOMO unit of the first host material and the LUMO unit of the second host material is greater than or equal to 3.4 angstroms and less than or equal to 5 angstroms.
  • any one of the first sub-light-emitting layer, the second sub-light-emitting layer, the third sub-light-emitting layer, the fourth sub-light-emitting layer, the fifth sub-light-emitting layer and the sixth sub-light-emitting layer includes: a first host material and a second host material.
  • the first host material and the second host material are isomers or homologues.
  • the absolute value of the difference between the wavelength corresponding to the peak of the emission spectrum of the first host material and the wavelength corresponding to the peak of the emission spectrum of the second host material is less than 10nm.
  • the first host material and the second host material can both be derivatives of anthracene.
  • a mass ratio between the first host material and the second host material is greater than or equal to 1/99 and less than or equal to 99.
  • the present application also provides a display panel, comprising the light-emitting device as described above.
  • the present application also provides a display device, comprising the display panel as described above.
  • FIG. 1 is a schematic structural diagram of a light-emitting device according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a light-emitting device according to another embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a light-emitting device according to another embodiment of the present application.
  • 2- light-emitting unit 21- first light-emitting unit; 22- second light-emitting unit;
  • 10a a first light-emitting region of the light-emitting device
  • 10b a second light-emitting region of the light-emitting device
  • 10c a third light-emitting region of the light-emitting device
  • 3-charge generation layer 31-first charge generation layer; 32-second charge generation layer;
  • the charge generation layer refers to the thin spatial layers of positive and negative charges formed on both sides of the contact surface when a "junction" is formed after a P-type semiconductor contacts with an N-type semiconductor or a metal contacts with a semiconductor.
  • HOMO-LUMO energy levels are collectively referred to as frontier orbitals.
  • HOMO and LUMO refer to the highest occupied molecular orbital (Highest Occupied Molecular Orbital) and the lowest unoccupied molecular orbital (Lowest Unoccupied Molecular Orbital) respectively.
  • frontier orbitals the two are collectively referred to as frontier orbitals, and the electrons in the frontier orbitals are called frontier electrons.
  • the energy difference between HOMO and LUMO is called the "band gap", and this energy difference is called the HOMO-LUMO energy level, which can sometimes be used to measure whether a molecule is easily excited: the smaller the band gap, the easier it is for the molecule to be excited.
  • OLED In the field of organic semiconductor technology applications, OLED as a new type of flat panel display has gradually attracted more attention.
  • OLED is an active light-emitting device with the advantages of high brightness, color saturation, ultra-thin, wide viewing angle, low power consumption, extremely high response speed and flexibility.
  • OLED includes an anode, a cathode and a light-emitting layer arranged between the anode and the cathode. Its light-emitting principle is to inject holes and electrons from the anode and the cathode into the light-emitting layer respectively. When electrons and holes meet in the light-emitting layer, the electrons and holes recombine to generate excitons. These excitons emit light while changing from the excited state to the ground state.
  • stacked OLED In order to obtain high current efficiency, people have designed a method of stacking two or more light-emitting units, which is called stacked OLED. Stacked OLED has a wide range of applications due to its advantages over traditional OLED, such as higher efficiency and longer life.
  • the stacked device mainly connects two or more light-emitting units together through a connecting layer. Compared with traditional OLED, it has higher luminous efficiency, and its luminous efficiency can be doubled with the number of light-emitting units. Moreover, when tested at the same current density, the degradation characteristics of the stacked OLED and the traditional OLED are the same, but because the initial brightness of the stacked OLED is larger, the life of the stacked OLED will be longer than that of the traditional OLED when converted to the same initial brightness.
  • the connecting layer between the two stacked light-emitting units is called the charge generation layer.
  • An electron injection layer EIL, an electron transport layer ETL, a hole injection layer HIL, a hole transport layer HTL and a charge generation layer CGL are usually required between the two light-emitting layers so that electrons and holes are well generated and well transported between the two light-emitting layers, and fully recombine in the light-emitting layer.
  • the three processes of charge generation, transport and injection have a significant impact on the performance of the device.
  • the composition of each compound used in each organic material layer is different, which will have a big difference in the overall performance of the device.
  • the charge generation layer can generate holes and electrons, and the generated holes and electrons are then separated, wherein the holes are transmitted to the light-emitting layer close to the P-type CGL through the hole transport layer, and the electrons are transmitted to the light-emitting layer close to the N-type CGL through the electron transport layer. It can be seen that efficient charge generation, fast charge transmission and effective injection are the key to achieving high efficiency and long life of stacked OLED devices.
  • the charge generation layer structure in stacked OLEDs not only plays the role of connecting the various OLED units, but more importantly, it generates charges and can quickly transfer and inject the generated charges into the light-emitting unit.
  • the charge generation layer also needs to have high light transmittance in the visible light range and a suitable thickness that matches the entire device, so that the light is emitted at the point where interference is enhanced. Therefore, optimizing the material composition of the charge generation layer and optimizing the matching between the charge generation layer and the film layer of the adjacent light-emitting unit are the keys to obtaining high-performance stacked OLEDs.
  • the light-emitting device, display substrate and display apparatus provided in the present application are intended to solve the above technical problems in the prior art.
  • an embodiment of the present application provides a light-emitting device, comprising: an anode 1 and a cathode 4 arranged opposite to each other, a light-emitting unit 2 and a charge generation layer 3.
  • the light-emitting unit 2 is arranged between the anode 1 and the cathode 4, and the light-emitting unit 2 comprises a first light-emitting unit 21 and a second light-emitting unit 22 arranged sequentially stacked along a first direction.
  • the charge generation layer 3 is arranged between the first light-emitting unit 21 and the second light-emitting unit 22.
  • the charge generation layer 3 comprises a first charge generation layer 31 and a second charge generation layer 32 arranged sequentially stacked along a first direction.
  • the first charge generation layer 31 comprises a first type of compound.
  • the second charge generation layer 32 comprises a second type of compound and a third type of compound.
  • the first direction is the direction from the anode 1 to the cathode 4.
  • X 1 to X 8 are the same or different and are independently selected from nitrogen or R 1 , and at least two nitrogen atoms are contained in X 1 to X 8 .
  • R1 is independently selected from the group consisting of hydrogen, deuterium, substituted or unsubstituted C1 - C60 alkyl, substituted or unsubstituted C2 - C60 alkenyl, substituted or unsubstituted C2 - C60 alkynyl, substituted or unsubstituted C1 - C60 alkoxy, substituted or unsubstituted C3 - C10 cycloalkyl, substituted or unsubstituted C1 - C10 heterocycloalkyl , substituted or unsubstituted C3- C10 cycloalkenyl, substituted or unsubstituted C1 - C10 heterocycloalkenyl, substituted or unsubstituted C6 - C60 aryl,
  • Ar 1 and Ar 2 are the same or different and are independently selected from the group consisting of hydrogen, deuterium, tritium, halogen, cyano, nitro, C 6 -C 60 aryl, a C 2 -C 60 heterocyclic group containing at least one heteroatom selected from O, N, S, Si and P, a condensed ring group of a C 3 -C 60 aliphatic ring and a C 6 -C 60 aromatic ring, a C 1 -C 50 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 30 alkoxy group, a C 6 -C 30 aryloxy group, a C 3 -C 60 alkylsilyl
  • A can be O, S, C, N, Si.
  • L is a direct bond, independently selected from: substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted adamantane, substituted or unsubstituted heteroaryl.
  • the substitution of R 2 and R 3 is the same as that of R 1.
  • Ar 3 and Ar 4 are the same or different, and are independently selected from: substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted naphthalene, substituted or unsubstituted dibenzofuran, substituted or unsubstituted carbazole, and substituted or unsubstituted fluorenyl.
  • A1 to A6 are each independently selected from: substituted or unsubstituted halogen, substituted or unsubstituted cyano, substituted or unsubstituted aldehyde, substituted or unsubstituted carbonyl, substituted or unsubstituted carboxyl, substituted or unsubstituted sulfonic acid, substituted or unsubstituted nitro, aryl substituted by electron withdrawing group, heteroaryl substituted by electron withdrawing group.
  • A0 can be a three-membered ring, a four-membered ring, a five-membered ring, or a six-membered ring.
  • the charge generation layer 3 in the light-emitting device provided in the present application is composed of a second charge generation layer 32 and a first charge generation layer 31 stacked together.
  • the process of generation, transmission and injection of holes and electrons can be optimized to ensure that charges are effectively injected and transmitted into the first light-emitting unit 21 and the second light-emitting unit 22, thereby improving the luminous efficiency and service life of the stacked OLED light-emitting device.
  • the heterocyclic compound shown in the general formula (I) provided in this embodiment when used as the material of the first charge generation layer 31, it has a lower LUMO energy level, which reduces the energy barrier at the interface between the first charge generation layer 31 and the second charge generation layer 32, thereby inhibiting the degradation at the interface.
  • the heterocyclic compound shown in the general formula (I) has excellent electron transport capability, and based on the above structure, the heterocyclic compound can increase the electron mobility in the organic light-emitting device, and can prevent the light-emitting device from reducing the luminous efficiency under low current conditions.
  • the heterocyclic compound shown in the general formula (I) contains a large conjugated plane, and when it is used in the charge generation layer 3, it can effectively improve the electron transport characteristics.
  • the compound represented by the general formula (II) contains electron-rich aromatic amine and electron-rich dibenzo groups, and can form conjugated ⁇ bonds with adjacent groups, so that the electrons in the molecule have a high delocalization, and thus the material has a high mobility to ensure the rapid transport of carriers. Therefore, when the compound represented by the general formula (II) is applied to the material of the second charge generation layer 32, the charge transport efficiency of the second charge generation layer 32 can be improved.
  • the third type of compound represented by the general formula (III) contains a large number of electron-withdrawing groups, and the third type of compound represented by the general formula (III) has a lower LUMO energy level.
  • the second type of compound represented by the general formula (II) and the third type of compound represented by the general formula (III) are mixed, the second type of compound generates holes, and the electron-withdrawing group in the third type of compound absorbs the HOMO unit in the second type of compound, so that the second type of compound and the third type of compound have a lower LUMO energy level after mixing, thereby facilitating the generation of charges.
  • A is any one of O, S, C, N, and Si, wherein when A is O or S, there are two chemical bonds around the atom, which can be directly connected to the two phenyl groups on both sides of A, and no other functional groups are connected.
  • A is N
  • A since the N atom forms three chemical bonds in organic matter, in addition to connecting to the phenyl groups on both sides, another bond is connected to a common functional group.
  • A is C and Si, four chemical bonds are formed, and in addition to connecting to the two phenyl groups on both sides, the other two bonds are connected to common functional groups.
  • the doping ratio of the third compound represented by the general formula (III) in the second charge generation layer 32 is 2% to 5%. Specifically, if the third compound is doped too much, since the third compound contains an electron-withdrawing group, it will cause the risk of crosstalk in the circuit of the light-emitting unit 2. At the same time, since the start-up voltage of the red sub-pixel is low, it is very likely to cause the red sub-pixel to be mistakenly lit, reducing the sensitivity of the driving circuit in the light-emitting unit 2 and affecting the light-emitting effect.
  • the doping ratio of the third compound in the second charge generation layer 32 is 5%.
  • the anode 1 can be made of a high work function electrode material, such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) or IGZO (Indium Gallium Zinc Oxide), or other transparent conductive oxide materials, or it can be a composite electrode formed by ITO/Ag/ITO, Ag/IZO, CNT/ITO (CNT is Carbon nano-metre tube, the same below), CNT/IZO, GO/ITO (GO is graphene oxide, the same below), GO/IZO, etc.
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • IGZO Indium Gallium Zinc Oxide
  • other transparent conductive oxide materials or it can be a composite electrode formed by ITO/Ag/ITO, Ag/IZO, CNT/ITO (CNT is Carbon nano-metre tube, the same below), CNT/IZO, GO/ITO (GO is graphene oxide, the same below), GO/IZO, etc.
  • the cathode 4 can be made of a metal material such as Mg (magnesium), Ag (silver) or Al (aluminum), or can be made of an alloy material such as Mg:Ag.
  • Mg manganesium
  • Ag silver
  • Al aluminum
  • the ratio between the Mg element and the Ag element can be in the range of (3:7) to (1:9).
  • the first type of compound is selected from any one of the following structural formulas.
  • the structural stability of the first type of compounds represented by general formula (I) is relatively high.
  • the 2nd and 9th positions of the heterocyclic compound are prone to degradation caused by negative polarizers, so these two positions are easily replaced by other substituents.
  • the following heterocyclic structure :
  • substitution positions of the first type of compounds in the present application may also be substituted by nitrogen or R1 , and the formed compounds may also be the first type of compounds in the present application, which is not specifically limited here.
  • the second compound is selected from any one of the following structural formulas.
  • the third class of compounds is selected from any one of the following structural formulas.
  • electron-withdrawing groups are groups with positive charge, including but not limited to aldehyde groups, carbonyl groups, carboxyl groups, halogen atoms, sulfonic acid groups, alkyl halide groups, cyano groups and nitro groups.
  • Electron-donating groups are groups with negative charge, including but not limited to alkyl groups, aryl groups, hydroxyl groups, alkoxy groups, amino groups, substituted amino groups, ester groups and amide groups. Therefore, when some of the substituents of A 1 to A 6 in the above-mentioned compounds are aryl groups, the aryl groups need to be further substituted by electron-withdrawing groups to improve the electron-withdrawing properties of the materials.
  • the third compound and the second compound are co-evaporated to form the second charge generation layer 32, which can enhance the conductivity and ensure the effective formation, combination and transfer of charges.
  • the first charge generation layer is an N-type charge generation layer
  • the second charge generation layer is a P-type charge generation layer
  • the first light-emitting unit 21 includes: a hole injection layer 211, a first hole transport layer 212, a first electron blocking layer 213, a first light-emitting layer 214, and a first hole blocking layer 215, which are sequentially stacked along a first direction.
  • the absolute value of the difference between the LUMO energy level of the first charge generation layer 31 and the LUMO energy level of the first hole blocking layer 215 is less than or equal to 0.5 eV.
  • the hole injection layer 211 may be an inorganic oxide, specifically, molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide, manganese oxide, etc., or a dopant of a strong electron-withdrawing system, such as F4TCNQ, HATCN, PPDN, etc.
  • P-type doping may also be performed in the hole transport material, with a doping thickness of 5 to 20 nm, and the hole injection layer 211 may be formed by co-evaporation.
  • the structural formulas of F4TCNQ, HATCN and PPDN are shown below.
  • the first light-emitting unit 21 further includes a first electron transport layer, which is disposed on a side of the first hole blocking layer 215 away from the anode 1.
  • the second light-emitting unit 22 further includes an electron injection layer, and the material of the electron injection layer can be an alkali metal or metal, such as LiF, Yb, Mg, Ca or their compounds.
  • the second light-emitting unit 22 includes: a second hole transport layer 221, a second electron blocking layer 222, a second light-emitting layer 223, a second hole blocking layer 224, and an electron transport layer 225 stacked along the first direction.
  • the absolute value of the difference between the HOMO energy level of the second charge generation layer 32 and the HOMO energy level of the second hole transport layer 221 is less than or equal to 0.3 eV.
  • the first hole transport layer 212 and the second hole transport layer 221 can be made of aromatic amine or carbazole materials, such as NPB, TPD, BAFLP, DFLDPBi, TCTA, TAPC, etc.
  • aromatic amine or carbazole materials such as NPB, TPD, BAFLP, DFLDPBi, TCTA, TAPC, etc.
  • the structural formulas of NPB, TCTA and TAPC are shown below.
  • the first electron blocking layer 213 and the second electron blocking layer 222 both have good hole transport properties and can be DBTA, PAPB, etc.
  • the structural formulas thereof are shown below.
  • a light-emitting auxiliary layer is further provided on the side of the light-emitting layer away from the anode 1, which can be an aromatic amine or carbazole material, such as CBP, PCzPA, etc.
  • an aromatic amine or carbazole material such as CBP, PCzPA, etc.
  • the materials of the first hole blocking layer 215, the second hole blocking layer 224 and the electron transport layer 225 in the present application can be aromatic heterocyclic compounds, such as imidazole derivatives such as benzimidazole derivatives, imidazopyridine derivatives, benzimidazolephenanthridine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, isoquinoline derivatives, phenanthroline derivatives and other compounds containing nitrogen-containing six-membered ring structures, and also include compounds having phosphine oxide-based substituents on the heterocyclic ring. For example: OXD-7, TAZ, p-EtTAZ, BPhen, BCP, TPBi, etc. Among them, the structural formulas of BPhen and TPBi are as follows.
  • the absolute value of the difference between the HOMO energy level or the LUMO energy level between the charge generation layer 3 and the adjacent film layer in the present application is within a range of values, which can reduce the energy level transmission barrier between the charge generation layer 3 and the adjacent film layer, is beneficial to the generation of charges, accelerates the transmission efficiency of electrons, and is more conducive to regulating the charge transmission balance.
  • the absolute value of the difference between the LUMO energy level of the first charge generation layer 31 and the LUMO energy level of the first hole blocking layer 215 is 0.1 eV, 0.2 eV, 0.3 eV, 0.4 eV, or 0.5 eV.
  • the absolute value of the difference between the HOMO energy level of the second charge generation layer 32 and the HOMO energy level of the second hole transport layer 221 is 0.1 eV, 0.2 eV, or 0.3 eV.
  • the dipole moment and glass transition temperature Tg of the above-mentioned structural formula (1-1), structural formula (1-2), structural formula (1-3) and comparative N-CGL are shown in the following Table 1.
  • the product of the distance between the positive and negative charge centers and the charge carried by the charge centers is called the dipole moment.
  • the glass transition temperature Tg determines the thermal stability of the material in the evaporation process. The higher the Tg, the better the thermal stability of the material. For example, the glass transition temperature is measured by a DSC differential scanning calorimeter in a test environment with a nitrogen atmosphere, a heating rate of 10°C/min, and a temperature range of 50°C to 300°C.
  • the first type of compound materials shown in the above structural formula (1-1), structural formula (1-2), and structural formula (1-3) have a dipole moment greater than the dipole moment of the comparative N-CGL, and a glass transition temperature lower than the glass transition temperature of the comparative N-CGL, indicating that the N-CGL formed by the first type of compound materials provided in the present application has better electron injection function than the comparative N-CGL, and has better thermal stability.
  • the dipole moment of the charge generation layer 3 is greater than 4D (Debye), which can ensure that the charge generation layer 3 has good electron injection properties.
  • the electron mobility of the first charge generation layer 31 is greater than the electron mobility of the first hole blocking layer 215.
  • the electron transfer efficiency of the electrons from the first charge generation layer 31 to the first light-emitting unit 21 can be enhanced, so that the electrons and the electron holes generated by the anode 1 adjacent to the first light-emitting unit 21 meet in the first light-emitting layer 214, and the electrons and holes recombine to generate excitons, which emit light while changing from an excited state to a ground state.
  • the hole mobility of the second charge generation layer 32 is greater than the hole mobility of the second hole transport layer 221.
  • the efficiency of hole transport from the second charge generation layer 32 to the electron transport in the second light-emitting unit 22 can be enhanced, so that the holes and the holes generated by the cathode 4 adjacent to the second light-emitting unit 22 meet in the second light-emitting layer 223, and the holes and electrons recombine to generate excitons, which emit light while changing from an excited state to a ground state.
  • a ratio between the electron mobility of the first hole blocking layer 215 and the electron mobility of the second hole blocking layer 224 is greater than or equal to 0.1 and less than or equal to 10.
  • the ratio of the electron mobility of the first hole blocking layer 215 to the electron mobility of the second hole blocking layer 224 is 0.1, 1, 3, 5, 7, or 10, which is not limited here.
  • a ratio between the hole mobility of the first hole transport layer 212 and the hole mobility of the second hole transport layer 221 is greater than or equal to 0.1 and less than or equal to 10.
  • the ratio between the hole mobility of the first hole transport layer 212 and the hole mobility of the second hole transport layer 221 is 0.1, 1, 3, 5, 7, or 10, which is not limited here.
  • the ratio between the electron mobility of the first hole blocking layer 215 and the electron mobility of the second hole blocking layer 224 is the ratio between the electron mobility of the first hole blocking layer 215 and the electron mobility of the second hole blocking layer 224 to be greater than or equal to 0.1 and less than or equal to 10, or the ratio between the hole mobility of the first hole transport layer 212 and the hole mobility of the second hole transport layer 221 to be greater than or equal to 0.1 and less than or equal to 10, it can be achieved that the positive projection of the recombination area of the first light-emitting unit 21 and the recombination area of the second light-emitting unit 22 in the first direction are substantially overlapped, ensuring that the light emitted by the light-emitting device has no obvious color separation, and finally presents a better light-emitting effect.
  • the first direction is the direction from the anode 1 to the cathode 4.
  • the first light-emitting layer includes a first sub-light-emitting layer 214a, a second sub-light-emitting layer 214b, and a third sub-light-emitting layer 214c sequentially arranged along the second direction;
  • the second light-emitting layer includes a fourth sub-light-emitting layer 223a, a fifth sub-light-emitting layer 223b, and a sixth sub-light-emitting layer 223c sequentially arranged along the second direction; the second direction is perpendicular to the first direction;
  • the first sub-light emitting layer 214a and the fourth sub-light emitting layer 223a emit light of the same color, and the absolute value of the difference between the wavelength of the light emitted by the first sub-light emitting layer 214a and the wavelength of the light emitted by the fourth sub-light emitting layer 223a is less than or equal to 20nm.
  • the second sub-light emitting layer 214b and the fifth sub-light emitting layer 223b emit light of the same color, and the absolute value of the difference between the wavelength of the light emitted by the second light emitting layer and the wavelength of the light emitted by the fifth sub-light emitting layer 223b is less than or equal to 20nm.
  • the third sub-light emitting layer 214c and the sixth sub-light emitting layer 223c emit light of the same color, and an absolute value of a difference in wavelength between the light emitted by the third sub-light emitting layer 214c and the sixth sub-light emitting layer 223c is less than or equal to 20 nm.
  • the absolute value of the difference between the wavelength of light emitted from the first sub-light emitting layer 214 a and the wavelength of light emitted from the fourth sub-light emitting layer 223 a is 5 nm, 10 nm, 15 nm or 20 nm.
  • the absolute value of the difference between the wavelength of light emitted by the second light emitting layer and the wavelength of light emitted by the fifth sub-light emitting layer 223 b is 5 nm, 10 nm, 15 nm or 20 nm.
  • an absolute value of a difference in wavelength between the light emitted from the third sub-light emitting layer 214 c and the light emitted from the sixth sub-light emitting layer 223 c is 5 nm, 10 nm, 15 nm, or 20 nm.
  • the first sub-light emitting layer 214a, the second sub-light emitting layer 214b and the third sub-light emitting layer 214c respectively emit light of any one of three colors, including red, green and blue.
  • the fourth sub-light emitting layer 223a, the fifth sub-light emitting layer 223b and the sixth sub-light emitting layer 223c respectively emit light of any one of three colors, including red, green and blue.
  • the first sub-light emitting layer 214a and the fourth sub-light emitting layer 223a both emit red light
  • the second sub-light emitting layer 214b and the fifth sub-light emitting layer 223b both emit green light
  • the third sub-light emitting layer 214c and the sixth sub-light emitting layer 223c both emit blue light.
  • the first charge generation layer 31 further includes an N-type dopant, which can be selected from any one of alkali metals and their oxides, alkaline earth metals and their oxides, and transition metals and their oxides.
  • the N-type dopant can form a complex with the first type of compound through a coordination bond, which can further improve the electron transport performance, thereby improving the luminous efficiency of the light-emitting device.
  • the N-type dopant is Yb (ytterbium).
  • alkali metals include all metal elements in Group IA of the periodic table, including lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs) and francium (Fr).
  • Alkali metal oxides are, for example, lithium oxide, sodium oxide or cesium oxide.
  • Alkaline earth metals refer to Group IIA elements in the periodic table, including beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc., and alkaline earth metal oxides are, for example, magnesium oxide or barium oxide, etc., which are not limited here.
  • the doping ratio of the N-type dopant in the first charge generation layer 31 is 0.5% to 2%.
  • the doping ratio of the N-type dopant in the first charge generation layer 31 is 1%.
  • any one of the first sub-light emitting layer 214a, the second sub-light emitting layer 214b, the third sub-light emitting layer 214c, the fourth sub-light emitting layer 223a, the fifth sub-light emitting layer 223b and the sixth sub-light emitting layer 223c includes: a first host material and a second host material.
  • the first host material and the second host material form an exciplex.
  • the difference between the wavelength corresponding to the peak of the emission spectrum of the exciplex and the wavelength corresponding to the peak of the emission spectrum of the first host material is greater than or equal to 20 nm
  • the difference between the wavelength corresponding to the peak of the emission spectrum of the exciplex and the wavelength corresponding to the peak of the emission spectrum of the second host material is greater than or equal to 20 nm.
  • the molecular spacing between the HOMO unit of the first host material and the LUMO unit of the second host material is greater than or equal to 3.4 angstroms and less than or equal to 5 angstroms.
  • the main material of the light-emitting layer in the present application uses an exciton complex, which can better regulate the balance of carriers in the light-emitting layer, effectively regulate the exciton recombination area, and increase the utilization rate of excitons.
  • the efficiency of the device can be further improved.
  • the material of the light-emitting layer includes a host material and a guest material.
  • the host material includes: a p-type material and an n-type material, and an exciplex is formed between the p-type material and the n-type material.
  • the molecular structure of the p-type material and the n-type material includes a LUMO unit and a HOMO unit, wherein when the molecular distance is between 3.4 angstroms ⁇ d ⁇ 5 angstroms, the LUMO unit in the p-type material and the HOMO unit in the n-type material disappear, and the HOMO unit in the p-type material and the LUMO unit in the n-type material recombine to form an exciplex.
  • any one of the first sub-light-emitting layer 214a, the second sub-light-emitting layer 214b, the third sub-light-emitting layer 214c, the fourth sub-light-emitting layer 223a, the fifth sub-light-emitting layer 223b, and the sixth sub-light-emitting layer 223c includes: a first host material and a second host material.
  • the first host material and the second host material are isomers or homologues.
  • the absolute value of the difference between the wavelength corresponding to the peak of the emission spectrum of the first host material and the wavelength corresponding to the peak of the emission spectrum of the second host material is less than 10nm.
  • the first host material and the second host material can both be derivatives of anthracene.
  • anthracene homologues or anthracene isomers are similar, which ensures that no exciplex will be formed between the two molecules to cause a red shift in the spectrum.
  • the phenomenon of material crystallization can be well improved, thereby solving the problem of crucible clogging of mass-produced materials.
  • two structurally similar anthracene homologues or anthracene isomers can directly obtain carriers from adjacent functional layers, and no energy transfer is required between each other, so there is no formation of carrier traps due to changes in the concentration ratio, resulting in the phenomenon of non-luminescence of the device.
  • a good amorphous film can be formed, thereby enhancing the performance of the device and helping to increase the life of the device.
  • a mass ratio between the first host material and the second host material is greater than or equal to 1/99 and less than or equal to 99.
  • any one of the first sub-light emitting layer 214a, the second sub-light emitting layer 214b, the third sub-light emitting layer 214c, the fourth sub-light emitting layer 223a, the fifth sub-light emitting layer 223b and the sixth sub-light emitting layer 223c comprises a host material and a guest material, wherein the guest material is a phosphorescent dopant or a fluorescent dopant.
  • the first sub-light emitting layer 214a and the fourth sub-light emitting layer 223a are red light emitting layers
  • the host material of the red light emitting layer can be a DCM series material, such as DCM, DCJTB, DCJTI, etc., or DCzDBT.
  • the guest material can be a metal complex, such as Ir(piq)2(acac), PtOEP, Ir(btp)2(acac), etc.
  • the structural formulas of DCzDBT and Ir(piq)2(acac) are shown below.
  • the second sub-light emitting layer 214b and the fifth sub-light emitting layer 223b are green light emitting layers
  • the host material of the green light emitting layer can be coumarin dyes, quinacridone copper derivatives, polycyclic aromatic hydrocarbons, diamine anthracene derivatives, carbazole derivatives, such as DMQA, BA-NPB, Alq3, CBP, etc.
  • the guest material can be a metal complex, such as Ir(ppy)3, Ir(ppy)2(acac), etc.
  • the structural formulas of CBP and Ir(ppy)3 are shown below.
  • the third sub-light emitting layer 214c and the sixth sub-light emitting layer 223c are blue light emitting layers, and the host material of the blue light emitting layer can be anthracene derivatives ADN, MADN, etc.
  • the guest material can be pyrene derivatives, fluorene derivatives, perylene derivatives, styrylamine derivatives, metal complexes, etc., such as TBPe, BDAVBi, DPAVBi, FIrpic, etc.
  • the structural formulas of ADN and DPAVBi are shown below.
  • the embodiment of the present application further provides a structural embodiment of a light-emitting device.
  • the light-emitting device includes: an anode 1, a hole injection layer 211 (5-30nm), a first hole transport layer 212 (15-25nm), a first electron blocking layer 213 (5-15nm), a first light-emitting layer 214 (10-20nm), a first hole blocking layer 215 (5-15nm), a first charge generating layer 31 (15-25nm), a second charge generating layer 32 (5-15nm), a second hole transport layer 221 (15-25nm), a second electron blocking layer 222 (5-15nm), a second light-emitting layer 223 (10-20nm), a second hole blocking layer 224 (5-25nm), an electron transport layer 225 (20-100nm), an electron injection layer EIL (1-10nm), and a cathode 4 (10-20nm).
  • the value in brackets after the film layer refers to the thickness range of the film layer.
  • the hole injection layer 211 (5-30 nm) means that the thickness range of the hole injection layer 211 is 5 nm to 30 nm.
  • the cathode 4 and the anode 1 are arranged opposite to each other, and the first direction is the direction from the anode 1 to the cathode 4.
  • the anode 1 in the light-emitting device is made of ITO material.
  • the thickness of each film layer in the light-emitting device is a hole injection layer 211 (10 nm), a first hole transport layer 212 (19 nm), a first electron blocking layer 213 (the thickness of the first sub-electron blocking layer 213a is 25 nm, the thickness of the second sub-electron blocking layer 213b is 15 nm, and the thickness of the third sub-electron blocking layer 213c is 5 nm, wherein the first light-emitting region 10a emits red light, the second light-emitting region 10b emits green light, and the third light-emitting region 10c emits blue light), a first light-emitting layer 214 (3 wt%, 15 nm), a first hole blocking layer 215 (5 nm), a first charge generation layer 31 (1 wt% Yb, 18 nm), a second charge generation layer 32
  • the thickness of layer 222a is 25nm
  • the thickness of the fifth sub-electron blocking layer 222b is 15nm
  • the thickness of the sixth sub-electron blocking layer 222c is 5nm
  • the first light-emitting area 10a emits red light
  • the second light-emitting area 10b emits green light
  • the third light-emitting area 10c emits blue light
  • the second light-emitting layer 223 (3wt%, 15nm
  • the second hole blocking layer 224 (5nm)
  • the electron transport layer 225 50wt% TPBi, 50wt% LiQ, 35nm
  • the cathode 4 15nm
  • 3wt% in the first light-emitting layer 214 (3wt%, 15nm) means that the mass proportion of the guest material in the first light-emitting layer 214 is 3%, and 15nm means that the thickness of the first light-emitting layer 214 is 15nm.
  • 1wt% Yb in the first charge generation layer 31 (1wt% Yb, 18nm) means that the mass proportion of the N-type dopant ytterbium (Yb) in the first charge generation layer 31 is 1%.
  • 5wt% in the second charge generation layer 32 (5wt%, 9nm) means that the mass proportion of the third type of compound material in the second charge generation layer 32 is 5%.
  • 50wt% TPBi in the electron transport layer 225 (50wt% TPBi, 50wt% LiQ, 35nm) means that the mass proportion of TPBi in the electron transport layer 225 is 50%, and 50wt% LiQ means that the mass proportion of lithium octahydroxyquinoline (LiQ) in the electron transport layer 225 is 50%.
  • the structural formulas of LiQ and TPBi are shown below respectively.
  • an embodiment of the present application provides a method for preparing a light-emitting device, including steps S1 to S4, which are specifically as follows.
  • the first light emitting unit 21 includes a hole injection layer 211 , a first hole transport layer 212 , a first electron blocking layer 213 , a first light emitting layer 214 , and a first hole blocking layer 215 .
  • a step S0 is further included before forming the first light emitting unit 21 on the substrate with the anode 1 .
  • the step S0 is: cleaning the substrate with the anode 1 .
  • the material of the anode 1 is indium tin oxide (ITO).
  • the material of the substrate is glass.
  • step S0 specifically includes ultrasonically treating the glass substrate with ITO in a cleaning agent, rinsing it in deionized water, ultrasonically degreasing it in an acetone-ethanol mixed solvent, and baking it in a clean environment until the water is completely removed.
  • the charge generation layer 3 includes a first charge generation layer 31 and a second charge generation layer 32 sequentially stacked along a first direction, wherein the first direction is a direction from the substrate to the first light emitting unit 21 .
  • the first charge generation layer 31 includes the first compound in the above embodiments.
  • the second charge generation layer 32 includes the second compound or the third compound in the above embodiments.
  • the second light emitting unit 22 includes a second hole transport layer 221 , a second electron blocking layer 222 , a second light emitting layer 223 , a second hole blocking layer 224 , and an electron transport layer 225 .
  • the material of the cathode 4 is a magnesium-silver alloy, and the mass ratio of magnesium (Mg) to silver (Ag) is 1:9.
  • the cathode 4 is formed by an evaporation process.
  • step S1 forming a first light emitting unit 21 on a substrate with an anode 1, specifically includes steps 101 to 105 as follows.
  • a glass substrate with the anode 1 is placed in a vacuum chamber and evacuated to 1 ⁇ 10 ⁇ 5 ⁇ 1 ⁇ 10 ⁇ 6 .
  • HATCN and NPB are co-evaporated under vacuum on a side of the anode 1 away from the glass substrate to form the hole injection layer 211 .
  • the material of the first hole transport layer 212 is NPB.
  • the first hole transport layer 212 is formed by an evaporation process.
  • the structural formula of the material of the first electron blocking layer 213 is> >
  • the first light-emitting layer 214 is composed of a host material and a guest material, and the mass proportion of the guest material in the first light-emitting layer 214 is 3%.
  • the first light emitting layer 214 is formed by an evaporation process.
  • S105 forming a first hole blocking layer 215 on a side of the first light emitting layer 214 away from the first blocking layer.
  • the first hole blocking layer 215 is formed by a vacuum evaporation process.
  • step S2 forming a charge generation layer 3 on a side of the first light emitting unit 21 away from the substrate, specifically includes steps 201 to 202 as follows.
  • the first charge generation layer 31 includes 99 wt % of the first compound and 1 wt % of metal ytterbium (Yb).
  • the P-type charge layer includes 95 wt % of the second compound and 5 wt % of the third compound.
  • step S3 forming a second light-emitting unit 22 on a side of the charge generation layer 3 away from the first unit, specifically includes steps 301 to 305 as follows.
  • the material of the second hole transport layer 221 is NPB.
  • the second hole transport layer 221 is formed by an evaporation process.
  • the structural formula of the material of the second electron blocking layer 222 is
  • the second light-emitting layer 223 is composed of a host material and a guest material, and the mass proportion of the guest material in the second light-emitting layer 223 is 3%.
  • the first hole blocking layer 215 is formed by a vacuum evaporation process.
  • the material of the electron transport layer 225 is a mixture of TPBi (50% by weight) and LiQ (lithium octahydroxyquinoline) (50% by weight), wherein the structural formulas of LiQ and TPBi are respectively as shown below.
  • the materials of the various film layers with the same function in the first light-emitting layer 214 and the second light-emitting layer 223 in the embodiment of the present application may be the same or different, which is not limited here.
  • the present application also provides the following embodiments 1 to 3 and comparative examples 1 to 3 for comparison.
  • the light-emitting device is tested under the same test environment, and the structure and the film material except the charge generation layer 3 are the same.
  • N-CGL the doping ratio of Yb is 1wt%
  • the remaining formula (1-1) or formula (1-2) or formula (1-3) or the comparative N-CGL is 99wt%.
  • P-CGL the doping ratio of formula (3-1) or P-W is 1wt%, and the remaining formula (2-1) or formula (2-10) or the comparative P-CGL is 98wt%.
  • the types of the first charge generation layer 31 (N-CGL) and the second charge generation layer 32 (P-CGL) are specifically shown in Table 2. Among them, the structural formulas of the comparative N-CGL, P-W and comparative P-CGL are shown below.
  • the measurement results of the light emitted by the light-emitting unit 2 are shown in Table 3.
  • the driving voltage, luminous efficiency and service life are all set to 100% based on the measurement results in Comparative Example 3.
  • the materials of the present application are only applied in the N-type charge generation layer or the P-type charge generation layer, and the two materials in the present application are not combined, so the luminous efficiency and service life are not significantly improved.
  • the N-CGL and P-CGL provided by the present application are used in combination in Examples 1 to 3, and the luminous efficiency and service life are significantly improved.
  • the luminous efficiency and service life are improved by about 30%, so it is further verified that when the N-CGL and P-CGL provided by the present application are used in combination, the luminous efficiency and service life of the light-emitting device can be significantly improved, thereby improving the photoelectric performance of the light-emitting device.
  • the embodiment of the present application provides a display panel, including the light emitting device provided in the above embodiment. Therefore, the display panel has all the features and advantages of the above light emitting device, which will not be described in detail here.
  • the display panel further includes a substrate, which is disposed on a side of the anode 1 away from the first light emitting unit 21.
  • the substrate can be any transparent rigid or flexible substrate material, such as glass, polyimide (PI), and the like.
  • the embodiment of the present application further provides a display device, comprising the display panel as described above. Therefore, the display device has all the features and advantages of the display panel as described above, which will not be described in detail here.
  • the display device can be any device that displays images, whether in motion (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is contemplated that the embodiments may be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers/navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controls and/or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.
  • PDAs personal data assistants
  • GPS receivers/navigators cameras
  • MP4 video players camcorders
  • orientation or position relationship indicated by terms such as “center”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside” and “outside” are based on the orientation or position relationship shown in the drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as a limitation on the present application.
  • first and second are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as “first” or “second” may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, “plurality” means two or more.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un substrat électroluminescent, un écran d'affichage et un appareil d'affichage. Le dispositif électroluminescent comprend : une anode et une cathode qui sont disposées en regard l'une de l'autre, des unités électroluminescentes et des couches de génération de charge. Les unités électroluminescentes sont disposées entre l'anode et la cathode, et les unités électroluminescentes comprennent une première unité électroluminescente et une seconde unité électroluminescente qui sont empilées séquentiellement dans une première direction ; les couches de génération de charge sont disposées entre la première unité électroluminescente et la seconde unité électroluminescente ; les couches de génération de charge comprennent une première couche de génération de charge et une seconde couche de génération de charge qui sont empilées séquentiellement dans la première direction ; et la première couche de génération de charge comprend un composé de premier type, la seconde couche de génération de charge comprend un composé de second type et un composé de troisième type, et la première direction est une direction pointant de l'anode à la cathode. Dans la présente invention, l'optimisation de types de matériau d'une première couche de génération de charge et d'une seconde couche de génération de charge et l'optimisation du garantir que des charges sont efficacement injectées et transférées dans une première unité électroluminescente et une seconde unité électroluminescente, ce qui permet d'améliorer l'efficacité lumineuse et la durée de vie d'un dispositif électroluminescent.
PCT/CN2022/140806 2022-12-21 2022-12-21 Dispositif électroluminescent, écran d'affichage et appareil d'affichage WO2024130606A1 (fr)

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