WO2024128130A1 - Substrate retention device and film formation device - Google Patents

Abstract

Provided is a technology that can increase substrate alignment accuracy in a film formation device. This substrate retention device is used in a film formation device for forming a film on a substrate, and is characterized by comprising: an electrostatic chuck that clamps the substrate; a member that is in contact with the electrostatic chuck and has a higher thermal conductance than the thermal conductance of the electrostatic chuck; and a temperature control means that controls the temperature of the member.

Description

Substrate holding device and film forming device

The present invention relates to a substrate holding device used in a film forming apparatus.

In recent years, flat panel display devices such as organic electroluminescence (EL) display devices have been used as display screens for monitors, televisions, smartphones, and other devices. The panel of an organic EL display device has a structure in which an organic layer that emits light is formed between two opposing electrodes (a cathode electrode and an anode electrode). When forming an organic EL display panel using a film-forming device, the peripheral edge of the substrate is held by a substrate holder placed in the chamber of the film-forming device, and an evaporation source installed at the bottom of the chamber is heated to release a metal or organic evaporation material, which is then evaporated onto the underside of the substrate through a mask.

Here, the center of the substrate, which is held by its peripheral portion, may bend due to its own weight. As the size of the substrate increases, the bending of the center portion also becomes greater, and the impact on deposition accuracy also becomes greater. As a method for reducing such bending of the substrate, Patent Document 1 proposes a technology for holding the substrate using an electrostatic chuck (ESC: Electrostatic chuck).

JP 2019-099910 A

The evaporation source in the deposition chamber is extremely hot, and there is a large temperature difference between the evaporation source and other parts in the deposition chamber. This makes it difficult to control the temperature of the electrostatic chuck, substrate, and mask, and they may deform or change in size due to thermal expansion. The effects of this size change can lead to a decrease in alignment accuracy and a deterioration in film quality.

The present invention aims to provide technology that allows for highly accurate temperature control in a film deposition device.

In order to solve the above problems, the substrate holding device of the present invention comprises:
A substrate holding device used in a film forming apparatus that forms a film on a substrate,
an electrostatic chuck for adsorbing the substrate;
a member having a thermal conductivity higher than the thermal conductivity of the electrostatic chuck and in contact with the electrostatic chuck;
A temperature control means for controlling the temperature of the member;
The present invention is characterized by comprising:
In order to solve the above problems, the film forming apparatus of the present invention comprises:
A chamber;
an evaporation source provided in the chamber;
an electrostatic chuck provided in the chamber and configured to attract a substrate;
a mask bonded to a film-forming surface of the substrate attracted to the electrostatic chuck;
In a film forming apparatus comprising:
a member having a thermal conductivity higher than the thermal conductivity of the electrostatic chuck and in contact with the electrostatic chuck;
A temperature control means for controlling the temperature of the member;
The present invention is characterized by comprising:

The present invention allows for highly accurate temperature control in a film forming device.

FIG. 1 is a schematic plan view showing a configuration of a film forming apparatus; Cross-sectional view showing the internal configuration of the film forming chamber Schematic diagram showing an example of a manufacturing line for an organic EL display device. FIG. 1 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a first embodiment of the present invention. A schematic diagram showing an example of temperature control in an organic EL production line. FIG. 5 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a second embodiment of the present invention. FIG. 2 is a schematic plan view showing the arrangement and control configuration of a plurality of temperature control members; FIG. 11 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a third embodiment of the present invention. FIG. 11 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a fourth embodiment of the present invention. FIG. 13 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a fifth embodiment of the present invention. FIG. 13 is a schematic cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to a sixth embodiment of the present invention. A diagram explaining a method for manufacturing an electronic device.

Below, embodiments of the present invention are described in detail. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, unless otherwise specified, the hardware and software configurations of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, relative positions, etc. in the following description are not intended to limit the scope of the present invention to only those.

The present invention is suitable for a film formation apparatus that forms a thin film of a film formation material on the surface of a film formation target such as a substrate by deposition or sputtering. The present invention can be understood as a temperature adjustment mechanism, a substrate holding device, a film formation apparatus, and a temperature adjustment method or control method using these devices. The present invention can also be understood as an electronic device manufacturing apparatus and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program that causes a computer to execute the temperature adjustment method or control method, or a storage medium that stores the program. The storage medium may be a non-transitory storage medium that is readable by a computer.

In the present invention, any material can be used for the substrate, such as glass, resin, metal, or silicon. Any material can be used for the film formation, such as organic materials or inorganic materials (metals, metal oxides). In the following explanation, "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing equipment for electronic devices and optical components. It is particularly suitable for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using such displays. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

<Embodiment>
(Device configuration)
1 is a plan view showing a schematic configuration of a film forming apparatus 1. Here, a manufacturing line for an organic EL display will be described. When manufacturing an organic EL display, a substrate of a predetermined size is carried into the manufacturing line, and after the organic EL and metal layers are formed, post-processing steps such as cutting the substrate are performed.

The film forming apparatus 1 includes a transfer chamber 130 located in the center, and multiple film forming chambers 110 (110a-110d) and mask stock chambers 120 (120a, 120b) located around the transfer chamber 130. The film forming chamber 110 includes a chamber in which film forming processing is performed on a substrate 10. The mask stock chamber 120 stores masks before and after use. A transfer robot 140 installed in the transfer chamber 130 transfers substrates S and masks M into and out of the transfer chamber 130. The transfer robot 140 is, for example, a robot in which a robot hand for holding substrates S and masks M is attached to an articulated arm.

The pass chamber 150 transports the substrate S flowing from the upstream side in the substrate transport direction to the transport chamber 130. The buffer chamber 160 transports the substrate S, for which the film formation process in the transport chamber 130 has been completed, to another film formation cluster downstream. When the transport robot 140 receives the substrate S from the pass chamber 150, it transports it to one of the multiple film formation chambers 110. The transport robot 140 also receives the substrate S, for which the film formation process has been completed, from the film formation chamber 110 and transports it to the buffer chamber 160.

The film formation apparatus 1 shown in FIG. 1 constitutes one film formation cluster, and another film formation cluster can be connected to the upstream or downstream side. A swirl chamber 170 that changes the direction of the substrate 10 is provided further upstream of the pass chamber 150 and further downstream of the buffer chamber 160. Each chamber, such as the film formation chamber 110, mask stock chamber 120, transfer chamber 130, buffer chamber 160, and swirl chamber 170, is maintained in a high vacuum state during the manufacturing process.

The film forming materials in the multiple film forming chambers 110a to 110d of the film forming apparatus 1 may be the same or different. For example, a film forming source of a different film forming material may be arranged in each of the film forming chambers 110a to 110d, and a layered structure may be formed as the substrate S moves sequentially through the film forming chambers 110a to 110d. Also, by arranging film forming sources of the same film forming material in the film forming chambers 110a to 110d, film formation may be performed on multiple substrates S in parallel. Also, a first film forming material may be arranged in the film forming chambers 110a and 110c, and a second film forming material may be arranged in the film forming chambers 110b and 110d, and the first layer may be formed in the film forming chamber 110a or 110c, and then the second layer may be formed in the film forming chamber 110b or 110.

Depending on the type of electrostatic chuck, the adhesion force of the substrate can be increased when a conductive material is attached to the substrate. In such a case, the electrostatic chuck can be effectively attached when a thin film of a metal material that will become an electrode layer has already been formed in the region of the substrate where the organic EL element is to be formed (typically the center of the substrate). For example, when organic layers are sequentially formed in deposition chambers 110b to 110d on a substrate on which an electrode layer has been formed in deposition chamber 110a, it is effective to place electrostatic chucks in deposition chambers 110b to 110d.

(Film formation chamber)
2 is a cross-sectional view showing the internal configuration of the film formation chamber 110. In the film formation chamber 110, a series of film formation processes are performed, such as receiving the substrate S and mask M from the transfer robot 140, transferring the substrate S and mask M to the transfer robot 140, aligning the substrate S and mask M relative to each other, fixing the substrate S to the mask M, and forming a film. In the following description, an XYZ orthogonal coordinate system is used in which the vertical direction is the Z direction, and rotation around the Z axis is represented by θ.

The film formation chamber 110 has a chamber 200. The interior of the chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas during film formation. Inside the chamber 200, an electrostatic chuck C, a magnet plate MP, a temperature control member TM, a cooling plate CP, a substrate support part 210, a mask table 221, an evaporation source 240 (film formation source), etc. are provided.

The mask M has an opening pattern that corresponds to the thin film pattern to be formed on the substrate. For example, a metal mask in which a metal foil on which a pattern is formed is supported by a frame around the periphery can be used as the mask M. The mask M is placed on the mask table 221. In the configuration of this embodiment, the substrate S is positioned and placed on the mask M, and then film formation is performed.

The substrate support part 210 has multiple claw-shaped supports 210a for receiving the substrate S transported into the film formation chamber. The electrostatic chuck C is a substrate holding means inside the film formation chamber, and attracts and holds the substrate S supported by the substrate support part 210 by electrostatic force. The electrostatic chuck C abuts against the surface of the substrate S opposite the surface that contacts the mask M (the surface on which a film is to be formed).

The substrate support part 210 may have a pressing tool corresponding to the support tool 210a. By clamping the end of the substrate S between the support tool 210a and the pressing tool, the substrate S can be held by the substrate support part 210 in addition to the electrostatic chuck C, making the substrate S more stable.

The magnet plate MP is provided to attract the mask M and adhere it to and adsorb it to the film-forming surface of the substrate S. The substrate S, which has been attracted to the electrostatic chuck C and has its relative position adjusted (aligned), is placed on the upper surface of the mask M (the film-forming surface of the substrate S is joined to the mask M), and the magnet plate MP is lowered from above the electrostatic chuck C to abut against the upper surface of the electrostatic chuck C (via the highly thermally conductive sheet HT in Example 1, etc.). The magnet plate MP applies a magnetic force to the mask M between the electrostatic chuck C and the substrate S (applying a magnetic attraction force to attract it upward (towards the substrate S)), thereby adhering the mask M to the substrate S.

The film forming apparatus according to this embodiment is equipped with a temperature control unit T as a temperature control mechanism (temperature control means) for preventing the temperature rise of the substrate S during film formation and preventing the organic material from changing or deteriorating. As an example, the temperature control unit T is composed of a temperature control member TM, a cooling plate CP, etc., and the specific configuration will be described later.

The evaporation source 240 is a film-forming means including a container such as a crucible for containing the evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. Note that the film-forming source is not limited to an evaporation source, and a sputtering device may also be used.

　An alignment stage 280, an electrostatic chuck lifting mechanism 291, a magnet plate lifting mechanism 292, etc. are provided on the upper outside of the chamber 200. The alignment stage 280 is a mechanism for moving the electrostatic chuck C and the magnet plate MP horizontally (XYθ directions). The electrostatic chuck lifting mechanism 291 is a mechanism for raising and lowering the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is a mechanism for raising and lowering the magnet plate MP in the Z-axis direction. These make it possible to adjust the position of the electrostatic chuck C with respect to the substrate S (adjust the relative distance) and adjust the position of the magnet plate MP with respect to the mask M in a direction intersecting a plane along the film-forming surface of the substrate S.

The alignment stage 280 is configured to be movable in the horizontal direction (XYθ direction) relative to the chamber 200 by receiving the driving force of the motor 281 for driving the alignment stage via, for example, a UVW type actuator. On the outer upper surface of the chamber 200, three linear actuators consisting of a guide rail (not shown) fixedly installed on the upper surface of the chamber 200 and a linear block movably installed on the guide rail are arranged, two parallel to each other and one perpendicular to each other. The base plate 282 is supported by the three linear blocks, and the base plate 282 moves in the horizontal direction (XYθ direction) by moving the three linear blocks in a predetermined direction by the driving force of the motor 281 installed on the outer upper surface of the chamber 200. By combining the moving directions of the three linear blocks, the base plate 282 can move to any position in the horizontal direction and change its direction in any direction. This movement of the base plate 282 allows the entire alignment stage 280 to move relative to the chamber 200 in the horizontal direction (XYθ direction).

The alignment stage 280 moves the electrostatic chuck C by driving a motor 281 in accordance with a control signal transmitted from the control unit 270 (described later), thereby moving the substrate S attracted and held by the electrostatic chuck C in the X and Y directions and rotating it in the θ direction. Note that the drive mechanism for the alignment stage 280 is not limited to the UVW type actuator described above, and other known configurations may be used.

The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on the alignment stage 280. Therefore, when the alignment stage 280 moves horizontally (XYθ directions) with respect to the chamber 200, the electrostatic chuck C and the magnet plate MP also move horizontally (XYθ directions) relative to the chamber 200.

The electrostatic chuck lifting mechanism 291 is a mechanism for raising and lowering the electrostatic chuck C in the Z-axis direction, and is mounted on the alignment stage base plate 282. The electrostatic chuck C inside the chamber 200 is connected to the electrostatic chuck lifting mechanism 291 outside the chamber 200 via a shaft that airtightly penetrates the top plate of the chamber 200. The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the electrostatic chuck to lift and lower, and an actuator (not shown) for driving the electrostatic chuck to lift and lower. The actuator is configured to receive the driving force of the motor to raise and lower the shaft supporting the electrostatic chuck C. Specific examples of the actuator include a linear guide and a ball screw.

The magnet plate lifting mechanism 292 is a mechanism for raising and lowering the magnet plate MP in the Z-axis direction, and is mounted on the alignment stage base plate 282. The magnet plate MP inside the chamber 200 is connected to the magnet plate lifting mechanism 292 outside the chamber 200 via a shaft that airtightly penetrates the top plate of the chamber 200. The magnet plate lifting mechanism 292 includes a motor (not shown) for driving the magnet plate to lift and lower, and an actuator (not shown) for driving the magnet plate to lift and lower. The actuator is configured to receive the driving force of the motor and raise and lower the shaft supporting the magnet plate MP. Specific examples of the actuator include a linear guide and a ball screw.

In this way, the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are installed on the base plate 282 of the alignment stage 280. Therefore, when the alignment stage 280 moves in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (and therefore the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, even if, for example, a positional deviation occurs between the substrate S and the electrostatic chuck C, the relative position between them can be adjusted. Similarly, even if, for example, a positional deviation occurs between the mask M and the magnet plate MP, the relative position between them can be adjusted.

In addition, in this embodiment, the substrate support part 210 and the mask table 221 are fixed in the horizontal direction (XYθ direction) with respect to the chamber 200, but are configured to be able to move up and down in the vertical direction (Z axis direction). The lifting mechanism for raising and lowering the substrate support part 210 and the mask table 221 in the vertical direction is provided on the external upper surface of the chamber 200 so as to be separate and independent from the alignment stage.

The lifting mechanism (not shown) for the substrate support part 210 and the mask table 221 is installed on a base plate (not shown) separate from the base plate 282, which is fixed to the external upper surface of the chamber 200, and is separate and independent from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) direction, the substrate support part 210 and the mask table 221 do not move in the horizontal (XYθ) direction.

In this embodiment, the position of the substrate S is adjusted (by adjusting the position of the electrostatic chuck C), but as long as the substrate S and mask M can be aligned relative to each other, the position of the mask M may be adjusted, or both the substrate S and mask M may be adjusted.

When the electrostatic chuck C holds the substrate S supported by the substrate support part 210, the electrostatic chuck lifting mechanism 291 first lowers the electrostatic chuck C so that the electrostatic chuck C abuts or is sufficiently close to the substrate S. Then, the control part 270 controls the power supply 290 to apply a predetermined adsorption voltage to the electrode embedded in the electrostatic chuck C. This causes the substrate S to be held by the electrostatic chuck C.

Next, during alignment, the electrostatic chuck lift mechanism 291 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. The alignment stage 280 then performs the alignment.

Here, the electrostatic chuck C in this embodiment is an element that constitutes the substrate holding device of the present invention. The elements that constitute the substrate holding device of the present invention may include a power supply 290, a control unit 270, an electrostatic chuck lifting mechanism 291, etc. The temperature adjustment unit T of various forms described below or the components of the temperature adjustment unit T are included in the elements that constitute the substrate holding device and film forming apparatus of the present invention as the temperature control means, etc. of the present invention.

Next, when the film is formed, the evaporation source 240 releases the film-forming material. When the film formation is completed, the magnet plate lifting mechanism 292 raises the magnet plate MP, and the electrostatic chuck lifting mechanism 291 raises the electrostatic chuck C, and the substrate S on which the film has been formed is handed over to the transfer robot. Then, the voltage applied to the electrostatic chuck C is set to a predetermined peeling voltage (e.g., 0 V), thereby releasing the substrate S from its hold.

A camera 262 is provided on the upper outside of the chamber 200, which performs optical imaging to generate image data. The camera 262 images through a vacuum sealing window provided in the chamber 200. In this embodiment, multiple cameras 262 are provided corresponding to the four corners of the substrate S. Each camera 262 is positioned so that its imaging range includes the substrate alignment mark provided at the corner of the substrate S and the mask alignment mark provided at the corner of the mask M.

During alignment, the camera 262 captures images of the substrate S and mask M and outputs image data to the control unit 270. The control unit 270 analyzes the captured image data and acquires position information of the substrate alignment mark and mask alignment mark using techniques such as pattern matching processing. Then, based on the amount of misalignment between the substrate alignment mark and the mask alignment mark, it calculates the XY directions, movement distance, and rotation angle θ for moving the substrate S. Then, it converts the calculated movement amount into the drive amount of the stepping motor or servo motor equipped in each actuator of the alignment stage 280, and generates a control signal. Note that two-stage alignment may be performed using a low-resolution but wide-field-of-view camera for rough alignment and a narrow-field-of-view but high-resolution camera for fine alignment.

The control unit 270 is an information processing device that communicates with each component of the film forming apparatus 1 via a control line or wireless communication (not shown), receives data from each component, and sends signals to each component to control their operation. The control unit 270 can be configured, for example, by a computer having a processor, memory, storage, I/O, etc. In this case, the functions of the control unit 270 are realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. Note that a control unit 270 may be provided for each film forming chamber, or one control unit 270 may control multiple film forming chambers.

The power supply 290 is a high-voltage power supply device capable of supplying voltage to each component of the film forming apparatus 1 via conductive wires (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage according to instructions from the control unit 270. The power supply 290 can be considered a voltage supplying means. By controlling the polarity and magnitude of the voltage (adsorption voltage) applied to the electrodes of the electrostatic chuck C, the adsorption force on the substrate S can be controlled. The power supply 290 and the control unit 270 may be considered to collectively constitute the power supply for the film forming apparatus.

The application of the present invention is not limited to cluster-type deposition apparatus as described above. The present invention can also be applied to in-line deposition apparatus in which multiple chambers are connected through a vacuum, and a substrate held by a substrate carrier is moved between the chambers while a film is deposited thereon.

(Electrostatic chuck)
The electrostatic chuck C has a structure in which an electric circuit, such as a metal electrode, is embedded in a plate-shaped base material made of ceramic or the like. Generally, there are various types of electrostatic chucks, such as a gradient force type, a Coulomb force type, and a Johnsen-Rahbek force type, depending on the principle by which the substrate is attracted to the electrostatic chuck. In any case, the attracting force can be increased by increasing the attracting voltage applied.

Gradient force type electrostatic chucks attract objects by utilizing the attraction force that occurs toward an area with a potential gradient (gradient) generated by the potential difference between the electrodes. A gradient force is generated even if the object to be attracted is an insulator, so it can hold even plain glass or glass substrates on which no conductive film has been formed. When generating a gradient force, an attraction voltage is applied so that the potential of the first electrode is higher than the reference potential of the object to be attracted and the potential of the second electrode is lower than the reference potential, based on the potential of the object to be attracted. In order to increase this gradient force, it is necessary to reduce the space between the electrodes and to arrange the electrodes closely together in order to make the potential gradient as steep as possible. Therefore, two comb-tooth electrodes with a structure in which the protruding comb teeth interdigitate with each other are suitable as electrodes for use in gradient force type electrostatic chucks.

　Coulomb force type electrostatic chucks attract objects by electrostatic attraction generated by applying positive and negative voltages to two electrodes, respectively, and are effective when the object is a conductor. Therefore, they can be effectively attached to a substrate on which an electrode layer of a metal material has already been formed. When the object is in a floating state and not connected to ground, both the positive and negative electrodes can be placed facing the object to generate polarization within the object, which allows it to be attracted. When the object is grounded, it can be attracted by at least one of the positive and negative electrodes. Coulomb force is generally stronger than gradient force. Also, the larger the area of the electrode facing the object, the stronger the chucking force. Therefore, in order to increase the chucking force, it is necessary to increase the ratio of the electrode area to the area of the electrostatic chuck as much as possible.

Johnson-Rahbek force type electrostatic chucks attract conductive objects by passing a leakage current through the positive electrode, the object to be attracted, and the negative electrode in that order, and require a dielectric with a volume resistance value within a specified range to be placed between the electrode and the object to be attracted. The Johnson-Rahbek force is generally stronger than the Coulomb force. Also, with the Johnson-Rahbek force type electrostatic chuck, the greater the contact area with the object to be attracted, the stronger the suction force can be.

(Organic EL display manufacturing line)
An example of a manufacturing line for an organic EL display device is shown in Fig. 3. The manufacturing line shown in Fig. 3 is a line in which five film formation clusters (film formation devices) 1 (film formation clusters 1-1 to 1-5), each having four film formation chambers 11 as shown in Fig. 1, and one film formation cluster 1b (film formation cluster 1-6), each having two film formation chambers 11, are connected in series.

Of the five deposition clusters 1-1 to 1-5, the four deposition clusters 1-1 to 1-4 located upstream in the line constitute a first organic vapor deposition section 102 that forms a total of eight organic layers in the production line, and two organic layers are deposited on the substrate S in each deposition cluster. The deposition cluster 1-5 located downstream in the line from the first organic vapor deposition section 102 constitutes the metal vapor deposition section 103 in the production line, and two metal layers are deposited on the substrate S. The deposition cluster 1b located downstream in the line constitutes the second organic vapor deposition section 104 in the production line, and one organic layer is deposited on the substrate S.

In a manufacturing line for organic EL display devices, a substrate S is first fed into a pre-processing section 101, where it undergoes the necessary pre-processing steps, and then is transported to a post-processing step via a first organic vapor deposition section 102, a metal vapor deposition section 103, and a second organic vapor deposition section 104. In the manufacturing line shown in Figure 3, the substrate S flows to a post-processing step, for example, via route A or route B indicated by the arrows in the figure.

The substrate S is heated in each of the deposition sections 102-104. In other words, the substrate S is repeatedly heated as it passes through the production line. In general, to evaporate the deposition source, the deposition source is heated to approximately 450°C for forming an organic film, and to approximately 1300°C for forming a metal film.

If we assume that the temperature of the substrate S rises by 0.1°C in the organic deposition chamber and 0.3°C in the metal deposition chamber in the above line, since there is almost no heat dissipation in a vacuum environment, the substrate S, which is placed in the pretreatment section 101 at 23°C, is vapor-deposited 11 times and rises to 24.5°C. If the thermal expansion coefficient of a typical glass substrate is 3.8 x 10^-6/m/°C, it will expand by 3.8 x 10^-6 x 24.5°C = 93.1 μm per meter. In addition, when moving from one organic deposition chamber to the next, it will expand by 3.8 x 0.1 = 0.38 μm/m. A G8H size glass substrate, which is classified as a large size, has a long side of 2.5 m, and even a temperature change of 0.1°C will cause it to expand by 0.38 x 2.5 = 0.95 μm.

If the above-mentioned size changes occur, even if the substrate S and mask M are aligned to within ±2.0 μm, for example, the substrate S may stretch and cause misalignment, which may reduce the alignment accuracy. Furthermore, the reduced alignment accuracy may lead to a deterioration in film quality, making it difficult to obtain good deposition results. Furthermore, size changes due to high temperatures during deposition may also occur in the electrostatic chuck C, and the size change of the electrostatic chuck C may also exacerbate the reduction in alignment accuracy.

(Temperature control mechanism)
The film forming apparatus in this embodiment includes a temperature control mechanism (temperature control means) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached, as a means for controlling the temperature of the substrate S to suppress the influence of the elongation of the substrate S in the organic EL manufacturing line described above. By controlling the temperature of the electrostatic chuck C, the heat given to the substrate S by the deposition is absorbed through the electrostatic chuck C, suppressing the temperature rise of the substrate S. Furthermore, the temperature of the substrate S before being input to the next process is controlled so that the substrate S can be sent to the next process after the temperature is lowered to a suitable input temperature in the next process. Note that, although an example in which the temperature of the substrate rises is shown here, the temperature of the substrate may be lowered during the transfer process. In that case, the temperature is controlled so that the substrate S can be sent to the next process after the temperature is raised to a suitable input temperature in the next process. The temperature of the substrate is not limited to being kept constant, and may be controlled to a different target substrate temperature in each chamber. Depending on the purpose, the temperature control means may be appropriately adopted, which performs both heating and cooling, only heating, or only cooling.

Below, temperature control units T1 to T7 for Examples 1 to 7 are shown as specific configuration examples of the temperature control mechanism.

Example 1
FIG. 4 is a schematic cross-sectional view illustrating the configuration of the temperature adjustment mechanism according to the first embodiment of the present invention.

As shown in FIG. 4, the temperature adjustment means in the film forming apparatus of this embodiment includes a temperature adjustment unit T1. The temperature adjustment unit T1 includes a temperature adjustment member TM, a high thermal conductivity sheet HT, a cooling plate CP, etc. In addition to the temperature adjustment unit T1, the elements constituting the temperature adjustment means include a temperature sensor TS1, a temperature sensor TS2 (see FIG. 2), a magnet plate MP as a first heat transfer member, and an electrostatic chuck C as a second heat transfer member.

(Temperature control member TM)
The temperature control member TM in this embodiment is a plate-shaped temperature control member incorporating a Peltier element. The temperature control member TM is provided integrally with the magnet plate MP and moves up and down together with the magnet plate MP. Specifically, the temperature control member TM is disposed in contact with the upper surface (the surface opposite to the surface facing the electrostatic chuck C) of the base plate BP of the magnet plate MP.

In addition, in this embodiment, the temperature control member TM is divided and arranged in multiple parts. That is, multiple temperature control members TM are arranged at equal intervals on the upper surface of the base plate BP of the magnet plate MP. Note that the temperature control member TM may be formed from a single member so that the temperature control member TM is in contact with almost the entire upper surface of the base plate BP. In other words, the configuration of the temperature control member TM is not limited to the configuration shown in FIG. 4.

In addition, the cooling plate CP is arranged in contact with the upper surface of the temperature control member TM (the surface opposite to the surface in contact with the magnet plate MP). In other words, the temperature control member TM is arranged between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly exchange heat between the magnet plate MP and the cooling plate CP.

Here, a Peltier element is a plate-shaped element in which P-type and N-type semiconductors are arranged alternately. When a direct current is passed through a Peltier element, heat is transferred between both sides of the element, with one side generating heat and increasing its temperature, and the other side absorbing heat and decreasing its temperature. Heating and cooling can be achieved by switching the direction of the current input to this Peltier element. Generally, Peltier elements have a fast response among temperature control elements, and can be switched at high speed, allowing for highly accurate temperature control.

(High thermal conductive sheet HT)
The highly thermally conductive sheet HT (highly thermally conductive member) is a sheet-like member made of a material having a higher thermal conductivity than the electrostatic chuck C and the magnet plate MP. The highly thermally conductive sheet HT is arranged in contact with the upper surface 261 of the electrostatic chuck C (the surface opposite to the adsorption surface 260 that adsorbs the substrate S). When the magnet plate MP descends toward the electrostatic chuck C to attract (adsorb) the mask M to the substrate S, the magnet MG of the magnet plate MP comes into contact with the upper surface of the highly thermally conductive sheet HT (the surface opposite to the surface that contacts the electrostatic chuck C). That is, when the magnet plate MP descends (when the mask M is attracted), the highly thermally conductive sheet HT is sandwiched between the electrostatic chuck C and the magnet plate MP in the Z-axis direction. In this state, the highly thermally conductive sheet HT is configured to exchange heat between the electrostatic chuck C and the magnet plate MP.

The highly thermally conductive sheet HT, which has a higher thermal conductivity than the electrostatic chuck C, comes into contact with the electrostatic chuck C, thereby making it possible to efficiently cool the electrostatic chuck C. This cooling effect can be obtained regardless of the size of the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C, but the larger the contact area, the greater the cooling effect.

In this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is configured to be larger than the projected area in the Z-axis direction of the multiple magnets MG of the magnet plate MP (the total contact area of the multiple magnets MG with the highly thermally conductive sheet HT). This makes it possible to improve the cooling effect compared to when the multiple magnets MG of the magnet plate MP are in direct contact with the electrostatic chuck C.

In addition, in this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is configured to be larger than the projection area of the temperature control member TM in the Z-axis direction (the total contact area of the multiple temperature control members TM with the magnet MG (base plate BP)). This makes it possible to improve the cooling effect compared to when the multiple temperature control members TM are in direct contact with the electrostatic chuck C.

Furthermore, in this embodiment, the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is secured to be as large as possible, and the highly thermally conductive sheet HT is configured to be in contact with the entire upper surface 261 of the electrostatic chuck C evenly. For example, it is preferable that the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C is 50% or more of the area of the electrostatic chuck C projected in the Z-axis direction. This makes it possible to lower the temperature of the electrostatic chuck C uniformly all over.

(Cooling plate CP)
The cooling plate CP is a plate-shaped cooling member made of stainless steel, and has a water channel WP inside, which is a cooling pipe for flowing a refrigerant. The water channel WP is configured to be able to circulate cooling water as a refrigerant between the chamber 200 and the outside, and the heat applied to the cooling plate CP can be absorbed by the cooling water and discharged to the outside. The cooling plate CP is an optional component for further enhancing the cooling effect, and may be omitted from the temperature adjustment unit T1.

(Temperature sensor TS1)
The temperature sensor TS1 (first temperature detection means) is a temperature sensor that detects the temperature of the electrostatic chuck C, is incorporated in the base material 250 of the electrostatic chuck C, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS1, for example, a thermistor, a diode, or the like can be used.

In this embodiment, the temperature of the electrostatic chuck C to which the substrate S is attached is constantly monitored by the temperature sensor TS1. The temperature of the substrate S rises when it receives thermal energy from deposition, and this thermal energy is transferred to the electrostatic chuck C. The temperature of the electrostatic chuck C at this time is detected by the temperature sensor TS1 and fed back to the cooling operation by the temperature control unit T1 (particularly the temperature control member TM).

(Temperature sensor TS2)
2, the temperature sensor TS2 (second temperature detection means) is provided on the side wall of the chamber 200 and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M from electromagnetic waves (light) emitted from the mask M can be used.

(Temperature control unit)
The control unit 270 includes a current supply unit (see FIG. 7) that supplies current to the Peltier element of the temperature adjustment member TM based on the power supplied from the power source 290. The control unit 270, as a control unit in the temperature control means, controls the temperature (heat exchange state) of the temperature adjustment member TM by controlling the current that the current supply unit supplies to the Peltier element of the temperature adjustment member TM. The control unit 270, together with the power source 290, may be considered to be included in the configuration (temperature control unit) of the temperature control means of the present invention.

The control unit 270 controls the temperature adjustment member TM based on the temperature detected by the temperature sensor TS1 and the temperature detected by the temperature sensor TS2. Specifically, for example, when a substrate S is subjected to film formation across multiple film formation chambers, the temperature of the electrostatic chuck C provided in the current film formation chamber (first film formation chamber) is controlled to approach the temperature of the mask M provided in the next film formation chamber (second film formation chamber). At this time, the temperature of the mask M provided in the next film formation chamber (second film formation chamber) is detected using the temperature sensor TS2 provided in the chamber 200 of the next film formation chamber.

That is, the temperature of the electrostatic chuck C (first electrostatic chuck) in the current film formation chamber (first film formation chamber) is monitored by the temperature sensor TS1 (first temperature sensor) provided on the electrostatic chuck C (first electrostatic chuck) in the current film formation chamber (first film formation chamber). At the same time, the temperature of the mask M (second mask) in the next film formation chamber (second film formation chamber) is detected by the temperature sensor TS2 (second temperature sensor) provided in the next film formation chamber (second film formation chamber). Then, the current applied to the temperature adjustment member TM (first temperature adjustment member) in the current film formation chamber (first film formation chamber) is controlled so that the temperature detected by the temperature sensor TS1 (first temperature sensor) approaches the temperature detected by the temperature sensor TS2 (second temperature sensor).

FIG. 5 is a schematic diagram showing an example of temperature control in an organic EL production line. In an organic EL production line, it may be required to match the temperature of the substrate S to the temperature inside the chamber 200 in each process or to the temperature of the mask M in each process. As shown in FIG. 5, the temperature of the mask M may differ in each film formation cluster 1-1 to 1-5, 1b due to differences in film formation conditions, etc. Also, as can be seen in comparison with the temperature rise of the substrate S when the temperature control of this embodiment is not performed as shown in FIG. 3, the temperature difference between the substrate S and the mask M becomes more noticeable, especially in the latter half of the line.

According to this embodiment, it is possible to match the temperature of the electrostatic chuck C, i.e., the temperature of the substrate S, to the temperature inside each chamber 200 and the temperature of the mask M. In other words, according to this embodiment, it is possible to control the temperature of the substrate S to match the temperature of the mask M of each of the deposition clusters 1-1 to 1-5 and 1b shown in FIG. 5.

(Other heat transfer components)
The magnet plate MP is a member that comes into contact with the electrostatic chuck C, and depending on the specific embodiment of the temperature adjustment unit T, can be regarded as a heat transfer member that transfers heat between the substrate S and the temperature adjustment member TM together with the electrostatic chuck C. In other words, it can be considered to be included in the configuration of the temperature control means of the present invention.

The magnet plate MP is a magnetic force generating means composed of a base plate BP and multiple magnets MG. The multiple magnets MG are attached at equal intervals to the underside of the base plate BP (the surface of the base plate BP facing the electrostatic chuck C). Each magnet MG is configured as a protrusion that protrudes in the Z-axis direction from the underside of the base plate BP toward the side where the electrostatic chuck C is located, and its tip surface comes into contact with the upper surface of the highly thermally conductive sheet HT.

The magnets MG attract the mask M toward the substrate S (in the Z-axis direction) with their magnetic force, and although there are no particular limitations on their arrangement, for example, an arrangement corresponding to the frame shape of the mask M may be adopted. In other words, instead of being evenly distributed over the entire area of the upper surface 261 of the electrostatic chuck C, they may be arranged in a biased manner.

The electrostatic chuck C is a member that comes into contact with the substrate S, the temperature of which is to be controlled, and from the viewpoint of controlling the temperature of the substrate S, it can be considered as a heat transfer member that transfers heat between the substrate S and the temperature control member TM. The electrostatic chuck C is configured such that a positive electrode 251 and a negative electrode 252 are embedded in a base material 250 made of ceramic or the like. The positive electrode 251 and the negative electrode 252 are connected to a power source 290, and a voltage of a desired magnitude is applied to them under the control of the control unit 270, generating an adsorption force corresponding to the magnitude of the voltage to attract the substrate S.

(Structural Features of Temperature Adjustment Unit T1)
The temperature adjustment unit T1 of this embodiment is configured to use a temperature adjustment member formed of a Peltier element or the like, and to control the temperature of the electrostatic chuck C while monitoring the temperature of the electrostatic chuck C and the temperature of the mask M. In addition, a highly thermally conductive sheet HT is brought into contact with the electrostatic chuck C, and the temperature of the electrostatic chuck C is controlled via the highly thermally conductive member (by controlling the temperature of the highly thermally conductive member).

Furthermore, the temperature control unit T1 is configured such that, as viewed from the mask M side, the mask M, electrostatic chuck C, magnet plate MP, and temperature control means (temperature control member TM, cooling plate CP, etc.) are arranged in this order in the Z-axis direction (the direction intersecting the adsorption surface 260 of the electrostatic chuck C). With this configuration, even if, for example, a magnetic member is included in the temperature control means, it is possible to reduce the influence of the magnetic member on the adsorption effect of the mask M by the magnet plate MP.

Various configurations can be given for the temperature control means (cooling means) used in the film forming apparatus. For example, a configuration in which a separate cooling member is placed between the magnet plate MP and the mask M in addition to the above-mentioned temperature control means of this embodiment is also conceivable. Even in such a configuration, by adopting the configuration of the temperature adjustment unit T1 of this embodiment, at least a part of the cooling means is placed in a position that has little effect on the magnet plate MP's attraction to the mask, and the same effect as above can be obtained. Naturally, it goes without saying that by consolidating the temperature control configuration into the temperature adjustment unit T1 of this embodiment, the effect of reducing the effect of the magnet plate MP's attraction to the mask is further enhanced.

(Temperature control)
The temperature control of the electrostatic chuck C using the temperature control unit T1 of this embodiment is most effective when the magnet plate MP is lowered from a position (first position) spaced apart from the electrostatic chuck C to a position (second position) in which it comes into contact with the electrostatic chuck C (through the highly thermally conductive sheet HT). In the film formation process, the magnet plate MP is typically brought into contact with the electrostatic chuck C (lowered) after the aligned substrate S is placed on the mask M, that is, when the mask M is brought into close contact with the substrate S by the magnetic force of the magnet plate MP.

In the temperature control unit T1, the timing and period for controlling the temperature control member TM (Peltier element) is typically when the evaporation source 240 releases the film-forming material, i.e., when the substrate S is exposed to the highest temperature. Even after film formation is completed, temperature control may be continued with the magnet plate MP in contact with the electrostatic chuck C, i.e., with the substrate S in close contact with the mask M, for example, with the shutter closed if the film formation device is equipped with a shutter. Alternatively, temperature control may not be performed during film formation, and temperature control may only begin after film formation is completed, with the magnet plate MP in contact with the electrostatic chuck C.

Furthermore, temperature control by controlling the temperature control member TM (Peltier element) may be performed at a timing other than during the film formation operation. For example, a configuration may be adopted in which the magnet plate MP is brought into contact with the electrostatic chuck C to control the temperature of the electrostatic chuck C while the substrate S is being transported before and after the film formation operation. In other words, the magnet plate MP may be brought into contact with the electrostatic chuck C (lowered) without adhering the mask M to the substrate S, and temperature control may be performed by controlling the temperature control member TM (Peltier element).

Furthermore, in a configuration in which a temperature control member TM made of a Peltier element is directly attached to the electrostatic chuck C, as in Example 2 described below, the temperature of the electrostatic chuck C may be controlled at any time regardless of the operating status of the film forming apparatus.

The temperature control by the temperature adjustment unit T1 typically involves cooling the substrate S. However, for example, in the film formation line shown in FIG. 5, if the temperature of the substrate S becomes lower than the temperature of the mask M, the electrostatic chuck C may be heated by the operation of the Peltier element of the temperature adjustment member TM. Therefore, the temperature adjustment member TM is not limited to one that uses a Peltier element, and may also use a heater composed of an electric heating wire or the like.

Furthermore, as described above, one of the purposes of the temperature control by the temperature adjustment unit T1 is to adjust the temperature of the substrate S to match the temperature of the mask M to be used in the next film formation in a series of film formation lines (multiple film formation operations across multiple film formation chambers) as shown in FIG. 5. However, the purpose of the temperature control by the temperature adjustment unit T1 is not limited to the above.

For example, depending on the characteristics of the film to be deposited on the substrate S, there may be a need to lower or raise the temperature of the substrate S as much as possible. In such a case, in one film formation chamber, the temperature of the electrostatic chuck C (i.e., the substrate S) may be controlled by the temperature adjustment unit T1 based on the detected temperature of the electrostatic chuck C.

In addition, the cooling or heating by the Peltier element changes the temperature of the member in contact with the temperature adjustment member TM, and further changes the temperature of other members in contact with that member in a chain reaction due to thermal conduction. That is, when the temperature adjustment member TM cools the magnet plate MP, the highly thermally conductive sheet HT in contact with the magnet plate MP, the electrostatic chuck C in contact with the highly thermally conductive sheet HT, and the substrate S in contact with the electrostatic chuck C are sequentially cooled. And, naturally, the mask M in contact with the substrate S is also cooled (the temperature adjustment member TM is a temperature control means that controls the temperature of each of the above-mentioned members).

The heat sources in the film formation chamber are the vaporized film formation material and radiant heat from the evaporation source, which mainly heat the mask M and substrate S. The temperatures of the substrate S and mask M ultimately change depending on the difference between the amount of heating energy and the cooling capacity via the electrostatic chuck C, and although a temperature gradient in which the temperature is higher on the side closer to the evaporation source can occur, the temperature rise of both the substrate S and the mask M is suppressed compared to the case where cooling by the temperature adjustment unit T1 of this embodiment is not performed. In other words, although the temperature adjustment control by the temperature adjustment unit T1 of this embodiment is primarily intended to regulate (cool) the temperature of the substrate S, it can also be said to indirectly suppress the temperature rise of the mask M.

Therefore, for example, unlike the deposition line shown in FIG. 5, in cases where it is desired to control the temperature of the mask M in each deposition chamber to the same temperature, it is possible to utilize the temperature control by the temperature adjustment unit T1 of this embodiment.

Example 2
A temperature adjustment unit T2 according to a second embodiment of the present invention will be described with reference to Fig. 6 and Fig. 7. Fig. 6 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the second embodiment of the present invention. Fig. 7 is a schematic plan view corresponding to the view taken along the line AA in Fig. 6, illustrating another example of the arrangement and control configuration of a plurality of temperature adjustment members.

Here, only the differences between the configuration of Example 2 and the configuration of Example 1 will be described. In the configuration of Example 2, the same reference numerals will be used for the same parts as in Example 1, and the description will be omitted.

In the temperature control unit T1 of Example 1, the temperature control member TM is not in direct contact with the electrostatic chuck C, but controls the temperature of the electrostatic chuck C via the magnet plate MP and the highly thermally conductive sheet HT. In contrast, in the temperature control unit T2 of Example 2, as shown in FIG. 6, the temperature control member TM is arranged so as to be in direct contact with the upper surface 261 of the electrostatic chuck C.

In other words, in the temperature control unit T2 of the second embodiment, the thermal energy transferred to the electrostatic chuck C is directly recovered by the temperature control member TM made of a Peltier element, cooling the electrostatic chuck C while radiating the thermal energy to the magnet plate MP. The thermal energy transferred to the magnet plate MP is recovered by the water passage WP provided in the cooling plate CP. This makes it possible to send the substrate S to the next process while suppressing the temperature rise.

As shown in FIG. 7, the temperature adjustment unit T2 of the second embodiment is configured to divide the upper surface 261 of the electrostatic chuck C into a plurality of regions 261-1 to 261-4, and to place independent temperature adjustment members TM1 to TM4 in each of the divided regions 261-1 to 261-4. Each of the temperature adjustment members TM1 to TM4 is configured to be independently controllable. In other words, a plurality of power supply circuit sections TC1 to TC4 are provided corresponding to the plurality of temperature adjustment members TM1 to TM4. Each of the power supply circuit sections TC1 to TC4 is configured with two power supplies and two switches connected in parallel, and is configured to be able to individually switch between the heating state and the cooling state of each Peltier element by switching the direction of the current input to the Peltier element.

The temperature adjustment unit T2 of the second embodiment is configured to have multiple temperature sensors TS1-1 to TS1-4 corresponding to the multiple divided regions 261-1 to 261-4 and the multiple temperature adjustment members TM1 to TM4 as temperature detection means for the electrostatic chuck C. In other words, the electrostatic chuck C is divided into multiple regions, a temperature sensor is placed in each region to monitor the temperature of each region, and a current is passed through the Peltier element so that each region reaches the desired temperature, thereby controlling the temperature of the electrostatic chuck C. This makes it possible to perform temperature control corresponding to the temperature difference between the divided regions 261-1 to 261-4, for example, control to reduce the temperature difference.

As an additional configuration, in order to increase the heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between the multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

The upper surface 261 of the electrostatic chuck C is divided into four divided regions 261-1 to 261-4, two vertically and two horizontally, and four temperature adjustment members TM1 to TM4, four power supply circuit units TC1 to TC4, and four temperature sensors TS1-1 to TS1-4 are provided, but the number of divisions and the method of division are not limited to this.

Example 3
A temperature adjustment unit T3 according to a third embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the third embodiment of the present invention.

Here, only the differences between the configuration of Example 3 and the configurations of Examples 1 and 2 will be described. In the configuration of Example 3, the same reference numerals will be used for the same parts as those in the configurations of Examples 1 and 2, and the description will be omitted.

The temperature control unit T3 of Example 3 is configured by attaching a non-magnetic metal member MM, which has a higher thermal conductivity than the electrostatic chuck C and also has a higher thermal conductivity than the magnet plate MP, to the base plate BP of the magnet plate MP. Instead of providing the non-magnetic metal member MM, the temperature control unit T3 of Example 3 is configured without the high thermal conductivity sheet HT of the temperature control unit T1 of Example 1.

As described above, the multiple magnets MG of the magnet plate MP may not be evenly arranged over the entire area of the upper surface 261 of the electrostatic chuck C, but may be arranged in a biased manner. Furthermore, from the standpoint of heat transfer, the arrangement may be such that a sufficient contact area cannot be ensured. In other words, in the magnet plate MP, at least the magnets MG are components that are arranged primarily to ensure the magnetic attraction effect of the mask M. Therefore, it is preferable to arrange a component separate from the magnets MG that prioritizes ensuring heat transfer.

From this perspective, the temperature control unit T3 of Example 3 arranges multiple non-magnetic metal members MM in the spaces between multiple magnets MG on the surface of the magnet plate MP facing the electrostatic chuck C. Each non-magnetic metal member MM protrudes from the above-mentioned facing surface of the magnet MG toward the electrostatic chuck C beyond the magnet MG. Therefore, when the magnet plate MP descends, the tip surface of the non-magnetic metal member MM comes into contact with the upper surface 261 of the electrostatic chuck C. A gap is formed between the magnet MG and the upper surface 261 of the electrostatic chuck C, but the height of the magnet MG is configured so that the magnetic attraction force of the mask M is sufficiently ensured.

In the temperature control unit T3 of Example 3, the highly thermally conductive sheet HT of the temperature control unit T1 of Example 1 may be disposed on the upper surface 261 of the electrostatic chuck C, and the non-magnetic metal member MM may be connected to the electrostatic chuck C via the highly thermally conductive sheet HT.

Example 4
A temperature adjustment unit T4 according to a fourth embodiment of the present invention will be described with reference to Fig. 9. Fig. 9 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the fourth embodiment of the present invention.

Here, only the differences between the configuration of Example 4 and the configurations of Examples 1 to 3 will be described. In the configuration of Example 4, the same reference numerals will be used for the same parts as those in the configurations of Examples 1 to 3, and the description will be omitted.

As mentioned above, the cooling plate CP is an optional component of the temperature control unit T. Therefore, unlike the temperature control unit T4 of Example 4 in Examples 1 to 3, the cooling plate CP is omitted as shown in FIG. 9. In cases where the temperature control capacity of the temperature control member TM is sufficient to control the temperature of the substrate S, there is a cost advantage in omitting the cooling plate CP.

As an additional configuration, in order to increase the heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between the multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

Example 5
A temperature adjustment unit T5 according to a fifth embodiment of the present invention will be described with reference to Fig. 10. Fig. 10 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the fifth embodiment of the present invention.

Here, only the differences between the configuration of Example 5 and the configurations of Examples 1 to 4 will be described. In the configuration of Example 5, the same reference numerals will be used for the same parts as those in the configurations of Examples 1 to 4, and the description will be omitted.

The temperature control unit T5 of Example 5 is configured to have a water channel WP, which is a cooling pipe that flows a refrigerant through the base plate BP of the magnet plate MP, as a cooling means that replaces the temperature control member TM using a Peltier element in the temperature control units T1 to T4 of Examples 1 to 4. In the temperature control unit T5 of Example 5, cooling water as a refrigerant circulates through the water channel WP as a temperature control means embedded in the magnet plate MP. This cools the base plate BP, and heat is exchanged with the electrostatic chuck C via the highly thermally conductive sheet HT and magnet MG.

In deposition environments and deposition equipment configurations where high responsiveness and fine adjustment are not required, the water-cooled temperature control configuration offers cost benefits by eliminating the temperature control member TM (and the power supply circuitry that controls it).

As an additional configuration, in order to increase the heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between the multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

Example 6
A temperature adjustment unit T6 according to a sixth embodiment of the present invention will be described with reference to Fig. 11. Fig. 11 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the sixth embodiment of the present invention.

Here, only the differences between the configuration of Example 6 and the configurations of Examples 1 to 5 will be described. In the configuration of Example 6, the same reference numerals will be used for the same parts as those in the configurations of Examples 1 to 5, and the description will be omitted.

The temperature control unit T6 of the sixth embodiment is configured with a heat sink HS as a cooling means to replace the temperature control member TM using a Peltier element and the cooling plate CP in the temperature control units T of the other embodiments. The heat sink HS is provided on the upper surface of the base plate BP of the magnet plate MP (the surface opposite to the surface facing the electrostatic chuck C).

The heat sink HS has multiple protrusions on the surface opposite the contact surface with the base plate BP, and has a heat dissipation structure (heat sink structure) in which the surface area of the uneven shape on the side where the protrusions are provided is larger than the area of the contact surface. In other words, the heat sink HS is configured to dissipate heat from the electrostatic chuck C transferred to the contact surface with the base plate BP on the uneven surface opposite the contact surface, promoting cooling of the electrostatic chuck C.

The specific configuration of the heat dissipation shape portion of the heat sink HS is not limited to a specific one. The shape of the protrusions of the heat dissipation shape portion may be, for example, a plate-shaped protrusion, a columnar protrusion, or a protrusion of another shape. Furthermore, it may be a combination of multiple protrusions of different shapes.

The temperature control unit T6 of this embodiment can be particularly suitable for use in a film formation apparatus in which the heat stored by vapor deposition is equal to or less than the heat dissipated from the magnet plate MP. In other words, depending on the film formation conditions, effective cooling can be achieved with the simple configuration of the temperature control unit T6 of this embodiment, which simply adds a heat sink HS to the magnet plate MP.

As an additional configuration, in order to increase the heat transfer between the temperature control member TM and the magnet plate MP, for example, a highly thermally conductive member may be placed in the space between the multiple magnets MG, and the temperature control member TM and the base plate BP may be connected via the highly thermally conductive member.

The configurations of the above-mentioned embodiments 1 to 6 can be combined with each other in any way. Furthermore, the cooling means in each embodiment can be replaced with a heating means or a temperature control means that performs both heating and cooling. For example, it is possible to use an electric wire heater or to apply a current in the opposite direction to a Peltier element, thereby switching between cooling and heating the temperature control target.

<Method of Manufacturing Electronic Device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described below. The configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

First, the organic EL display device to be manufactured will be described. Figure 12(a) is an overall view of the organic EL display device 700, and Figure 12(b) shows the cross-sectional structure of one pixel.

As shown in FIG. 12(a), a plurality of pixels 702 each including a plurality of light-emitting elements are arranged in a matrix in a display area 701 of an organic EL display device 700. As will be described in detail later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel referred to here refers to the smallest unit that allows a desired color to be displayed in the display area 701. In the case of the organic EL display device according to this embodiment, the pixel 702 is configured by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light different from each other. The pixel 702 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

FIG. 12(b) is a schematic partial cross-sectional view taken along line B-B in FIG. 12(a). A pixel 702 is made up of a plurality of light-emitting elements, each of which has a first electrode (anode) 704, a hole transport layer 705, one of light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Of these, the hole transport layer 705, the light-emitting layers 706R, 706G, and 706B, and the electron transport layer 707 are organic layers. In this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed in patterns that correspond to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for the multiple light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In order to prevent the first electrode 704 and the second electrode 708 from shorting out due to foreign matter, an insulating layer 709 is provided between the first electrodes 704. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 12(b), the hole transport layer 705 and the electron transport layer 707 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

Next, we will explain in detail an example of a manufacturing method for an organic EL display device.

First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

Acrylic resin is formed by spin coating on the substrate 703 on which the first electrode 704 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the area where the first electrode 704 is formed, forming an insulating layer 709. This opening corresponds to the light-emitting area where the light-emitting element actually emits light.

The substrate 703 with the patterned insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held by the adhesive member. It is then carried into a first organic material deposition apparatus and, after inversion, a hole transport layer 705 is deposited as a common layer on top of the first electrode 704 in the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, the hole transport layer 705 is formed to be larger than the display area 701, so no high-definition mask is required.

Next, the substrate 703 on which the hole transport layer 705 has been formed is carried into a second organic material deposition apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and a red-emitting light-emitting layer 706R is deposited on the portion of the substrate 703 where the red-emitting element is to be located.

Similar to the deposition of light-emitting layer 706R, light-emitting layer 706G that emits green light is deposited by a third organic material deposition apparatus, and then light-emitting layer 706B that emits blue light is deposited by a fourth organic material deposition apparatus. After deposition of light-emitting layers 706R, 706G, and 706B is completed, electron transport layer 707 is deposited over the entire display area 701 by a fifth deposition apparatus. Electron transport layer 707 is formed as a layer common to the three color light-emitting layers 706R, 706G, and 706B.

The substrate on which the electron transport layer 707 has been formed is moved by a metallic deposition material deposition device to deposit the second electrode 708.

Then, it is moved to a plasma CVD device, where a protective layer 710 is deposited, completing the deposition process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. After that, it is cut to complete the organic EL display device 700.

If the substrate 703 with the patterned insulating layer 709 is exposed to an atmosphere containing moisture or oxygen from the time it is carried into the deposition apparatus until the deposition of the protective layer 710 is completed, the light-emitting layer made of the organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the deposition apparatus in a vacuum atmosphere or an inert gas atmosphere.

1...film deposition device, S...substrate, M...mask, C...electrostatic chuck, TM...temperature control member, MP...magnet plate, CP...cooling plate

Claims (14)

1. A substrate holding device used in a film forming apparatus that forms a film on a substrate,
   an electrostatic chuck for adsorbing the substrate;
   a member having a thermal conductivity higher than the thermal conductivity of the electrostatic chuck and in contact with the electrostatic chuck;
   A temperature control means for controlling the temperature of the member;
   A substrate holding device comprising:
2. a magnetic force generating means for generating a magnetic force that attracts a mask toward the substrate attracted to the electrostatic chuck,
   2. The substrate holding device according to claim 1, wherein the temperature control means controls the temperature of the member via the magnetic force generating means in contact with the member.
3. The substrate holding device according to claim 2, characterized in that the temperature control means is disposed in contact with the magnetic force generating means or is embedded in the magnetic force generating means.
4. The substrate holding device according to claim 2, characterized in that the thermal conductivity of the member is higher than the thermal conductivity of the magnetic force generating means.
5. The electrostatic chuck has a substrate and an electrode embedded in the substrate,
   2. The substrate holding device according to claim 1, wherein the thermal conductivity of the member is higher than the thermal conductivity of the base material.
6. The temperature control means is
   A temperature control member having a Peltier element;
   A current supply unit that supplies a current to the Peltier element;
   a control unit that controls a current that is supplied to the Peltier element by the current supply unit;
   Including,
   6. The substrate holding device according to claim 1, wherein the control unit switches between a state in which the member heats the electrostatic chuck and a state in which the member cools the electrostatic chuck by controlling the current supply unit so as to change a direction of a current flowing through the Peltier element.
7. The substrate holding device according to any one of claims 1 to 5, characterized in that the temperature control means is a cooling pipe through which a refrigerant flows.
8. The substrate holding device according to any one of claims 1 to 5, characterized in that the temperature control means is a member having a heat dissipating shape.
9. The substrate holding device according to any one of claims 1 to 5, characterized in that the temperature control means is a heater.
10. The substrate holding device according to any one of claims 1 to 5, characterized in that the area of the part of the member that comes into contact with the electrostatic chuck is greater than the area of the temperature control means projected in a direction intersecting the substrate adsorption surface of the electrostatic chuck.
11. The substrate holding device according to any one of claims 2 to 4, characterized in that the area of the part of the member that contacts the electrostatic chuck is larger than the area of the magnetic force generating means projected in a direction intersecting the substrate adsorption surface of the electrostatic chuck.
12. A substrate holding device according to any one of claims 1 to 5, characterized in that the area of the part of the member that contacts the electrostatic chuck is 50% or more of the area of the electrostatic chuck projected in a direction intersecting the substrate adsorption surface of the electrostatic chuck.
13. A chamber;
    an evaporation source provided in the chamber;
    an electrostatic chuck provided in the chamber and configured to attract a substrate;
    a mask that is bonded to a film-forming surface of the substrate attracted to the electrostatic chuck;
    In a film forming apparatus comprising:
    a member having a thermal conductivity higher than the thermal conductivity of the electrostatic chuck and in contact with the electrostatic chuck;
    A temperature control means for controlling the temperature of the member;
    A film forming apparatus comprising:
14. a magnetic force generating means for generating a magnetic force that attracts the mask toward the deposition surface,
    14. The film forming apparatus according to claim 13, wherein the temperature control means controls the temperature of the member via the magnetic force generating means in contact with the member.

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