JP2021066952A - Film deposition apparatus, manufacturing apparatus for electronic device, film deposition method, and manufacturing method for electronic device - Google Patents

Abstract

To reduce a decrease in film deposition precision due to a temperature difference between a mask and a substrate.SOLUTION: A film deposition apparatus comprises: a vacuum container; substrate suction means which is provided in the vacuum container, and has a suction surface for sucking a substrate; a mask support unit which is provided in the vacuum container and used to support a mask; alignment means which moves at least one of the substrate suction means and mask support unit in at least one direction among a first direction which is parallel with the suction surface, a second direction which is parallel with the suction surface and crosses the first direction, and a rotation direction which is perpendicular to the suction surface and on the third direction as an axis of rotation so as to perform alignment operation between the substrate and mask; an elevation mechanism which moves at least one of the substrate suction means and mask support unit in the third direction; and control means which brings, before the alignment operation is performed by the alignment means, the substrate sucked by the substrate suction means and the mask supported by the mask support unit into contact with each other.SELECTED DRAWING: Figure 3

Description

The present invention relates to a film forming apparatus, an electronic device manufacturing apparatus, a film forming method, and an electronic device manufacturing method.

The organic EL display device (organic EL display) is not limited to smartphones, televisions, and automobile displays, but also VR-HMD (Virtual Reality Head Mo).
Its application fields are expanding to unt Display) and the like, and in particular, the display used for VR-HMD is required to form a pixel pattern with high accuracy in order to reduce dizziness of the user.
In the manufacture of an organic EL display device, when the organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the film forming material discharged from the film forming source of the film forming apparatus is used as a pixel pattern. An organic layer or a metal layer is formed by forming a film on the substrate through the mask on which the above is formed. At this time, an evaporation source is usually used as the film-forming source, and the film-forming material is heated to a high temperature to evaporate at the evaporation source.
In such a film forming apparatus, before the film forming process, the relative positions of the substrate and the mask are measured using the alignment marks provided on the substrate and the mask, respectively, and when the relative positions are deviated. Adjusts (aligns) the position by relatively moving the substrate and / or mask.
The film formation accuracy of the organic material layer or metal layer of the organic light emitting element is affected by the accuracy of the alignment between the substrate and the mask. If the relative positions of the substrate and the mask deviate before or during the film forming process, the film forming accuracy will drop.

Japanese Unexamined Patent Publication No. 2010-265497

In the film forming apparatus, the mask arranged on the evaporation source side is easily affected by the radiant heat from the evaporation source, and the temperature may rise. Compared to this, the substrate is not only affected by radiant heat relatively little because the mask is placed between it and the evaporation source, but also comes into contact with the electrostatic chuck that adsorbs the back surface, so the temperature is relatively low. Is maintained at. As a result, a temperature difference occurs between the substrate and the mask.
Therefore, there is a difference in the degree of thermal expansion between the substrate and the mask, which affects the alignment accuracy. That is, due to the thermal expansion of the mask, which has a relatively high temperature, the size of the opening of the mask that defines the film formation pattern may change, or the position of the opening may shift. As a result, the film forming accuracy is lowered and the yield of the film forming process is lowered.
An object of the present invention is to provide a film forming apparatus capable of reducing a decrease in film forming accuracy due to a temperature difference between a mask and a substrate, an electronic device manufacturing apparatus, a film forming method, and an electronic device manufacturing method using the same. To do.

The present invention includes a vacuum vessel, a substrate suction means provided in the vacuum vessel and having a suction surface for sucking a substrate, and a mask support unit provided in the vacuum vessel for supporting a mask. At least one of the substrate suction means and the mask support unit is in a first direction parallel to the suction surface, a second direction parallel to the suction surface and intersecting the first direction, and the suction surface. An alignment means that performs an alignment operation between the substrate and the mask by moving in at least one of rotation directions about a third direction perpendicular to the substrate, and at least one of the substrate suction means and the mask support unit. In a film forming apparatus including an elevating mechanism for moving one of them in the third direction, a substrate adsorbed by the elevating mechanism and the mask are adsorbed by the elevating mechanism before the alignment operation is performed by the alignment means. It is characterized by providing a control means for bringing the mask into contact with the mask supported by the support unit.

According to the present invention, the film forming accuracy and the yield of the film forming process can be improved by lowering the temperature of the mask by bringing the mask into contact with the substrate before the alignment step.

FIG. 1 is a schematic view of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a flowchart showing a film forming method according to an embodiment of the present invention. FIG. 4 is a schematic view schematically showing a part of the steps of the film forming method of FIG. FIG. 5 is a flowchart showing a film forming method according to another embodiment of the present invention. FIG. 6 is a schematic view showing an electronic device manufactured by the film forming method of the present invention.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Further, in the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. are intended to limit the scope of the present invention to these unless otherwise specified. Not a thing.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be suitably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum vapor deposition. ..
As the material of the substrate, any material such as semiconductor (for example, silicon), glass, a film of a polymer material, and a metal can be selected, and the substrate is, for example, a silicon wafer or a film such as polyimide on a glass substrate. May be a laminated substrate. Further, as the film forming material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) can be selected.

The present invention can be effectively applied to a film forming apparatus having an evaporation source such as a vacuum vapor deposition apparatus by heating evaporation, but the present invention is not limited to this, and is also applicable to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. , Can be applied. Specifically, the technique of the present invention can be applied to various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and manufacturing devices such as optical components. Specific examples of the electronic device include a light emitting element, a photoelectric conversion element, a touch panel, and the like.
The present invention is particularly preferably applicable to an apparatus for manufacturing an organic light emitting element such as an OLED or an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention also includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) equipped with a light emitting element, and a sensor (for example, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a device.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.
The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for VR-HMD. In the case of a display panel for VR-HMD, for example, after forming a film for forming an organic EL element on a silicon wafer of a predetermined size, the silicon is formed along a region (scribing region) between the element forming regions. The wafer is cut out to produce multiple small size panels.
The electronic device manufacturing device according to the present embodiment generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1.
The cluster device 1 includes a film forming device 11 that performs processing (for example, film formation) on the substrate W, a mask stock device 12 that stores the mask M before and after use, and a transfer chamber 13 (convey device) arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the film forming apparatus 11 and the mask stock apparatus 12.
In the transport chamber 13, a transport robot 14 that transports the substrate W and the mask M is arranged. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate W or a mask M is attached to an articulated arm.

In the film forming apparatus 11, the film forming material discharged from the evaporation source is formed on the substrate W via the mask M. Delivery of substrate W / mask M to and from the transfer robot 14, thermalization process according to the present invention described later, adjustment (alignment) of relative positions of substrate W and mask M, fixing of mask M and substrate W, film formation, etc. A series of film forming processes is performed by the film forming apparatus 11.
In the manufacturing apparatus for manufacturing the organic EL display device, the film forming apparatus 11 can be divided into an organic film forming apparatus and a metallic film forming apparatus according to the type of the material to be formed. The organic film film forming apparatus deposits an organic film forming material on the substrate W by vapor deposition or sputtering. The metal film forming apparatus deposits a metallic film forming material on the substrate W by vapor deposition or sputtering.
In a manufacturing apparatus for manufacturing an organic EL display device, which film forming apparatus is arranged at which position depends on the laminated structure of the organic EL elements to be manufactured, and this is achieved according to the laminated structure of the organic EL elements. A plurality of film forming devices for forming a film are arranged.
An organic EL device usually has a structure in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are laminated in this order on a substrate W on which an anode is formed. , The film forming apparatus is arranged so that these layers can be sequentially formed.

In the mask stock device 12, a new mask M used in the film forming process in the film forming apparatus 11 and a used mask M are separately stored in a plurality of cassettes. The transfer robot 14 transfers the used mask M from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys the new mask M stored in the other cassette of the mask stock device 12 to the film forming apparatus 11. ..
The relay device connected between the plurality of cluster devices 1 includes a pass chamber 15 for transporting the substrate W between the cluster devices 1.
The transfer robot 14 in the transfer chamber 13 receives the substrate W from the path chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate W for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11e), and is connected to the downstream side. Transport to chamber 15.

In addition to the pass chamber 15, the relay device includes a buffer chamber (not shown) for absorbing the difference in processing speed of the substrate W in the cluster device 1 on the upstream and downstream sides, and a swivel chamber for changing the direction of the substrate W. (Not shown) can be further included. For example, the buffer chamber includes a substrate loading unit that temporarily stores a plurality of substrates W, and the swivel chamber includes a substrate rotation mechanism (for example, a rotation stage or a transfer robot) for rotating the substrate W by 180 degrees. As a result, the orientation of the substrate W becomes the same in the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.
The pass chamber 15 according to the embodiment of the present invention may include a substrate loading portion (not shown) and a substrate rotation mechanism for temporarily accommodating a plurality of substrates W. That is, the pass chamber 15 may also function as a buffer chamber or a swivel chamber.
The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, and the like constituting the cluster apparatus 1 are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 of the relay device is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.
The substrate W in which the film formation of a plurality of layers constituting the organic EL element is completed is a sealing device (not shown) for sealing the organic EL element or a cutting device for cutting the substrate W to a predetermined panel size. It is transported to (not shown).

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices and the like. The arrangement between the chambers may change.
For example, the electronic device manufacturing apparatus according to the embodiment of the present invention may be an in-line type instead of the cluster type shown in FIG. That is, the substrate W and the mask M may be mounted on the carrier, and the film may be formed while passing through a plurality of film forming devices arranged in a row. Further, it may have a structure of a type in which a cluster type and an inline type are combined. For example, the formation of the organic layer may be performed by a cluster type manufacturing apparatus, and the film formation step of the electrode layer (cathode layer), the sealing step, the cutting step, and the like may be performed by an in-line type manufacturing apparatus.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.
<Film formation equipment>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11 according to the embodiment of the present invention. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction and the horizontal plane as the XY plane is used. The rotation angle around the X axis is represented by θ _X , the rotation angle around the Y axis is represented _{by θ Y} , and the rotation angle around the Z axis _{is represented by θ Z.}
FIG. 2 shows an example of a film forming apparatus 11 that evaporates or sublimates the film forming material by heating and forms a film on the substrate W via the mask M.
The film forming apparatus 11 is provided in a vacuum container 21 maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas, and the position of the substrate W is in the X direction (first direction) and the Y direction. (second direction), and θ and _Z-direction at least magnetic levitation stage mechanism 22 for adjusting in one direction (first driving mechanism) of the (rotation direction), provided in a vacuum chamber 21, the mask M The mask support unit 23 that supports the film, the substrate adsorption means 24 that is provided in the vacuum vessel 21 to adsorb and hold the substrate W, and the substrate adsorption means 24 that is provided in the vacuum vessel 21 to store the film-forming material and heat it. Includes the evacuation source 25 and the evacuation source 25.

The film forming apparatus 11 according to the embodiment of the present invention can further include a magnetic force applying means 26 for bringing the mask M into close contact with the substrate W side by magnetic force.
The vacuum vessel 21 of the film forming apparatus 11 according to the embodiment of the present invention includes a first vacuum vessel portion 211 in which the magnetic levitation stage mechanism 22 is arranged and a second vacuum vessel portion 212 in which the evaporation source 25 is arranged. including. The internal space of the vacuum vessel 21 is maintained in a high vacuum state by, for example, a vacuum pump (not shown) connected to the second vacuum vessel portion 212.
Here, in order to reduce the transmission of external vibration to the magnetic levitation stage mechanism 22, an embodiment of the present invention will be described based on a structure in which the vacuum container 21 is divided into a plurality of vacuum container portions 211 and 212. However, the present invention is not limited to this, and the same can be applied to a film forming apparatus in which the vacuum vessel 21 is composed of a single vacuum vessel portion.

As shown in FIG. 2, when the vacuum container 21 is divided into two vacuum container portions 211 and 212, at least the first vacuum vessel portion 211 and the second vacuum container portion 212 are expanded and contracted. Possible member 213 is installed. In the telescopic member 213, vibrations from the vacuum pump connected to the second vacuum container portion 212 and vibrations from the floor or the floor on which the film forming apparatus 11 is provided are first passed through the second vacuum container portion 212. It is reduced that it is transmitted to the vacuum container portion 211 of the above. The expandable member 213 is, for example, a bellows, but the present invention is not limited to this, and the transmission of vibration between the first vacuum container portion 211 and the second vacuum container portion 212 can be reduced. Other members may be used.
As described above, the film forming apparatus 11 according to the embodiment of the present invention can reduce the transmission of external vibration to the first vacuum container portion 211 in which the magnetic levitation stage mechanism 22 is installed.

The vacuum vessel 21 further includes a reference plate 214 to which the magnetic levitation stage mechanism 22 is fixedly connected, and a reference plate support portion 215 for supporting the reference plate 214 at a predetermined height. According to one embodiment of the present invention, as shown in FIG. 2, a stretchable member 213 may be further installed between the reference plate 214 and the first vacuum container portion 211. As a result, it is possible to further reduce the transmission of external vibration to the magnetic levitation stage mechanism 22 via the reference plate 214.
Although not shown, the vacuum vessel 21 may further include a reference plate 214, i.e., a vacuum-compatible cylinder installed on the upper vessel wall of the vacuum vessel 21 so as to project inward of the vacuum vessel 21. In this case, the alignment camera of the alignment camera unit 27, which will be described later, is arranged so as to be inserted into the atmosphere side of the vacuum-compatible cylinder.
A vibration isolation unit 216 is installed between the reference plate support portion 215 and the installation stand 217 of the film forming apparatus 11 to reduce vibration transmission from the floor or the floor to the reference plate support portion 215 through the installation stand 217. To.

The magnetic levitation stage mechanism 22 adjusts (aligns) the relative positions of the substrate W and the mask M based on the relative positions of the substrate W and the mask M measured by the alignment camera unit 27 (alignment operation). This is an example of an alignment means). That is, the magnetic levitation stage mechanism 22 is a stage mechanism for adjusting the position of the substrate W or the substrate suction means 24 by the magnetic levitation linear motor, and the substrate W or the substrate suction means at least in the X direction, the Y direction, and the θ _Z direction. The position of the means 24 can be adjusted.
The magnetic levitation stage mechanism 22 magnetically levitates and moves the stage reference plate portion 221 that functions as a fixed base, the fine movement stage plate portion 222 that functions as a movable base, and the fine movement stage plate portion 222 with respect to the stage reference plate portion 221. Includes a magnetic levitation unit 223 for the purpose.
The magnetic levitation stage mechanism 22 uses a self-weight compensating magnet (not shown) to provide a levitation force of a magnitude corresponding to gravity acting on the fine movement stage plate portion 222. As a result, with the fine movement stage plate portion 222 levitated, a magnetic levitation linear motor (not shown) is used to move the fine movement stage plate portion 222 in at least one of the _{X direction, the Y direction, and the θ Z direction.} Can be moved. At this time, the position of the fine movement stage plate portion 222 can be measured by using a laser interferometer (not shown), and the measured position information is used to control the drive of the magnetic levitation linear motor.

FIG. 2 shows an example in which the magnetic levitation stage mechanism 22 is used as the alignment stage mechanism, but the present invention is not limited to this, and for example, a mechanical including an XYθz actuator installed outside the vacuum vessel 21 and the like. Alignment stage mechanism may be used.
The mask support unit 23 is a means for receiving and holding the mask M transported by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.
The mask support unit 23 is installed so as to be able to move up and down at least in the vertical direction (Z direction, third direction). Thereby, the distance between the substrate W and the mask M in the vertical direction can be easily adjusted. When the position of the substrate W is adjusted by the magnetic levitation stage mechanism 22 as in one embodiment of the present invention, the mask support unit 23 that supports the mask M is provided with a motor (not shown), a ball screw / guide (not shown), or the like. It is preferable to mechanically elevate and drive by an elevating mechanism including.

Further, according to one embodiment of the present invention, the mask support unit 23 may be installed so as to be movable in the _{horizontal direction (that is, the XYθ Z direction).} As a result, even if the mask M is out of the field of view of the alignment camera of the alignment camera unit 27, it can be quickly moved into the field of view.
The mask support unit 23 further includes a mask pickup 231 for temporarily receiving the mask M carried into the vacuum container 21 by the transfer robot 14.
The mask pickup 231 is configured to be able to move up and down relative to the mask support surface of the mask support unit 23. For example, as shown in FIG. 2, the mask pickup elevating mechanism 232 allows the mask pickup 231 to be configured to be able to elevate and elevate relative to the mask support surface of the mask support unit 23. However, the present invention is not limited to this, and other configurations may be provided as long as the mask pickup 231 and the mask support surface of the mask support unit 23 can be relatively raised and lowered.

The mask pickup 231 that receives the mask M from the hand of the transfer robot 14 descends relative to the mask support surface of the mask support unit 23, and lowers the mask M onto the mask support unit 23. On the contrary, when the used mask M is carried out, the mask M is lifted from the mask support surface of the mask support unit 23 so that the hand of the transfer robot 14 can receive the mask M.
The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask support unit 23. For example, the mask M used for manufacturing an organic EL display panel for VR-HMD is a fine metal mask in which a fine opening pattern corresponding to the RGB pixel pattern of the light emitting layer of the organic EL element is formed. An open mask used to form a mask (Fine Metal Mask) and a common layer (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.) of an organic EL element.
And include.

The substrate adsorption means 24 is an example of a substrate holding unit for holding the substrate W. The substrate adsorption means 24 attracts and holds the substrate W as a film-deposited object conveyed by the transfer robot 14 installed in the transfer chamber 13, and is a fine movement stage plate portion that is a movable base of the magnetic levitation stage mechanism 22. It will be installed at 222.
The substrate adsorption means 24 is, for example, an electrostatic chuck having a structure in which an electric circuit such as a metal electrode is embedded in a dielectric / insulator (for example, ceramic material) matrix. Since such an electrostatic chuck has a larger heat capacity than the substrate W, the temperature of the substrate W adsorbed on the electrostatic chuck rises more than that of the mask M even if it is affected by the radiant heat from the evaporation source 25. Relatively suppressed (eg room temperature). Therefore, as will be described later, the temperature of the mask M can be lowered by bringing the substrate W into contact with or in close contact with the mask M before the alignment step (alignment operation).

In the electrostatic chuck as the substrate adsorption means 24, a dielectric having a relatively high resistance is interposed between the electrode and the adsorption surface, and adsorption is performed by the Coulomb force between the electrode and the object to be adsorbed. It may be a type of electrostatic chuck, in which a dielectric having a relatively low resistance is interposed between the electrode and the adsorption surface, and Johnson-Labeck is generated between the adsorption surface of the dielectric and the object to be adsorbed. It may be a Johnson-Labeck force type electrostatic chuck in which adsorption is performed by force, or it may be a gradient force type electrostatic chuck in which an object to be adsorbed is adsorbed by a non-uniform electric field.
When the object to be adsorbed is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Labeck force type electrostatic chuck, and the object to be adsorbed is an insulator such as glass. In this case, it is preferable to use a gradient force type electrostatic chuck.

The electrostatic chuck may be formed of one plate, or may be formed so as to have a plurality of sub-plates capable of independently controlling the suction force. Further, even when formed by one plate, a plurality of electrode portions may be provided inside the plate so that the adsorption force can be independently controlled for each electrode portion in one plate.
The film forming apparatus 11 may further be provided with a substrate support unit that temporarily holds the substrate W before the substrate suction means 24 sucks and holds the substrate W carried into the vacuum container 21 by the transfer robot 14. .. For example, the substrate support unit may be installed so as to have a separate substrate support surface on the mask support unit 23, and may be installed so as to move up and down by raising and lowering the mask support unit 23.

Further, the substrate adsorption means 24 may be provided with a cooling means for cooling the substrate adsorption means 24, that is, a cooling means for suppressing a temperature rise of the substrate W, either integrally or separately. As an example of the former, for example, the electrostatic chuck may also serve as a cooling means by providing a refrigerant flow path in the electrostatic chuck so that the refrigerant can flow. As an example of the latter, a separate cooling plate can be additionally installed on the opposite side of the substrate suction surface of the electrostatic chuck.
As described above, the substrate adsorption means 24 also serves as a cooling means, or by providing the cooling means separately, it is possible to further suppress the temperature rise of the substrate W. As a result, deterioration and deterioration of the organic material deposited on the substrate W can be suppressed. In particular, by providing the cooling means, the mask M in a high temperature state can be cooled more efficiently when the substrate W and the mask M are brought into contact with or in close contact with each other.

The evaporation source 25 includes a crucible (not shown) in which the film-forming material to be formed on the substrate W is stored, a heater for heating the crucible (not shown), and the evaporation rate from the evaporation source 25 becomes constant. It includes a shutter (not shown) that prevents the film-forming material from scattering on the substrate W. The evaporation source 25 can have various configurations depending on the application, such as a point evaporation source and a linear evaporation source.
The evaporation source 25 may include a plurality of crucibles containing different film forming materials. In such a configuration, a plurality of crucibles for storing different film-forming materials may be movably installed at the film-forming position so that the film-forming material can be changed without opening the vacuum vessel 21 to the atmosphere.

The magnetic force applying means 26 is a means for pulling the mask M toward the substrate W side by the magnetic force and bringing them into close contact with each other. That is, the magnetic force applying means 26 attracts the mask M by magnetic force before the alignment step and / or after the completion of the alignment step and before the start of the film forming step for thermalization. Adhere to W.
Such a magnetic force applying means 26 is an example of a mask contacting means for attracting the mask M to the substrate W side and bringing the mask M into close contact with the substrate W, and the present invention is not limited thereto. For example, the mask M can be attracted to the substrate W side by using the electrostatic chuck of the substrate adsorption means 24. In this case, the substrate adsorption means also functions as a mask adhesion means at the same time.
Such a magnetic force applying means 26 is installed so as to be able to move up and down in the vertical direction. In this case, when the mask M is attracted, the magnetic force applying means 26 is lowered toward the mask M side, and conversely, when the attracted mask M is released, the magnetic force applying means 26 is raised from the mask M side. On the other hand, the generation of the magnetic force can be controlled by turning on / off the voltage applied to the magnetic force applying means 26. Such a magnetic force applying means 26 can be composed of, for example, an electromagnet and / or a permanent magnet.

The film forming apparatus 11 may include a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate W.
On the upper outside (atmosphere side) of the vacuum vessel 21, that is, on the reference plate 214, the mask pickup elevating mechanism 232 for raising and lowering the mask pickup 231 and the magnetic force applying means elevating mechanism for raising and lowering the magnetic force applying means 26 261 etc. are installed.
Then, a mask support unit elevating mechanism (not shown, a second drive mechanism) for elevating the mask support unit 23 may be installed on the reference plate 214, but the present invention is not limited to this, and the present invention is not limited to this, for example. The mask support unit elevating mechanism (not shown) may be installed on the atmospheric side below the first vacuum container portion 211. Further, a substrate holding unit elevating mechanism (not shown) for raising and lowering the substrate holding unit such as the substrate suction means 24 may be installed on the upper outside of the vacuum container 21. Further, one elevating mechanism (not shown) may elevate at least one of the mask support unit 23 and the substrate suction means 24.

The film forming apparatus 11 according to an embodiment of the present invention is an alignment camera unit including an alignment camera for photographing the alignment marks formed on the substrate W and the mask M and measuring the relative positions of the substrate W and the mask M. 27 is further included.
The alignment camera includes a rough alignment camera (first alignment camera) having a wide viewing angle and a relatively low resolution, and a fine alignment camera (second alignment camera) having a narrow viewing angle but a relatively high resolution. .. The rough alignment camera and the fine alignment camera have positions corresponding to the positions of the rough alignment marks (first position) so that the rough alignment marks and the fine alignment marks provided on the substrate W and the mask M can be imaged. It is installed at a position corresponding to the position of the fine alignment mark (second position). The position of the rough alignment mark and the position of the fine alignment mark may be different from each other.

The film forming apparatus 11 includes a control unit 28. The control unit 28 controls the transfer of the substrate W / mask M, controls the distance between the substrate W and the mask M, controls the adhesion of the mask M to the substrate W, controls the alignment, and controls the voltage to the substrate adsorption means 24. It has a function of generally controlling the operation of the film forming apparatus 11, such as application control and film forming control. The control of the control unit 28 in the film forming method of the present invention will be described later with reference to FIGS. 3 to 5.
The control unit 28 can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit 28 is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logical controller) may be used. Alternatively, a part or all of the functions of the control unit 28 may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatus.

<Film formation process>
Hereinafter, the film forming method in the film forming apparatus 11 according to the present embodiment shown in FIG. 2 will be described with reference to FIGS. 3 to 5.
In the film forming method according to the present invention, before carrying out the alignment (position adjustment) step of the substrate W and the mask M, a heat equalization step of bringing the substrate W and the mask M into contact or close contact with each other to equalize the heat is carried out.
Here, "contact" means a state in which the mask M and the substrate W are sufficiently / very close to each other and at least a part of the substrate W is in contact with at least a part of the mask M. On the other hand, "adhesion" refers to a state in which the mask M and the substrate W are in contact with each other and a state in which the mask M and the substrate W are further relatively attracted by a mask adhesion means such as the magnetic force applying means 26. It means a state of contact without a gap.

As described above, the temperature of the mask M tends to rise due to the influence of the radiant heat from the evaporation source 25, but the substrate W is adsorbed by the substrate adsorption means 24, and the temperature rise is suppressed or cooled. It is cooled by means. In this case, the thermal expansion of the mask M may cause deformation of the opening pattern of the mask M, or misalignment of the opening pattern and / or the alignment mark, which may reduce the alignment accuracy and the film formation accuracy. However, according to the present invention, the substrate W and the mask M are brought into contact with each other or brought into close contact with each other before the alignment step, and the heat equalization step or the cooling step is carried out. It is possible to suppress a decrease in accuracy.
In particular, since the thermalization step or the cooling step according to the embodiment of the present invention is performed only by bringing the substrate W and the mask M into contact or close contact with each other before the alignment step is carried out, a separate component is added to the film forming apparatus 11. It is not necessary to add the existing film forming apparatus 11, and the existing film forming apparatus 11 can be used as it is.
However, the present invention is not limited to this, and the mask M may be additionally cooled by additionally installing a predetermined cooling means on the mask support unit 23 together with the thermalization step.

When the alignment step is divided into a first alignment (rough alignment) and a second alignment (fine alignment), the heat equalization step according to the present invention is executed before performing the first alignment. It may also be performed before performing the second alignment. Alternatively, in some embodiments, the thermalization step may be performed before the first alignment and before the second alignment.

FIG. 3 is a flowchart showing a film forming method according to the first embodiment of the present invention, and FIG. 4 is a drawing schematically showing a part of the steps of the film forming method of FIG. In the embodiment shown in FIGS. 3 and 4, the thermalization step of cooling the mask M by bringing the mask M and the substrate W into contact with or in close contact with each other is before the alignment step of the substrate W and the mask M, that is, in the rough alignment step. It is the one that is executed before.

First, with the mask M supported by the mask support unit 23, the substrate W is carried into the vacuum container 21 by the transfer robot 14 in the transfer chamber 13 (S101).
The control unit 28 applies a substrate adsorption voltage to the substrate adsorption means 24, and attracts the substrate W carried into the vacuum container 21 by the transfer robot 14 to the substrate adsorption means 24 (S102). FIG. 4A shows a state in which the mask M is supported by the mask support unit 23 and the substrate W is adsorbed by the substrate suction means 24. When the substrate W is adsorbed on the substrate adsorption means 24, the entire surface of the substrate W may be simultaneously adsorbed on the entire adsorption surface of the substrate adsorption means 24, and one region to another region of the plurality of regions of the substrate adsorption means 24 may be simultaneously adsorbed. The substrate W may be adsorbed in sequence toward.

Next, the mask M and the substrate W are brought into contact with each other or brought into close contact with each other in order to homogenize the heat between the substrate W and the mask M (S103, FIGS. 4 (b) and (c)).
Therefore, the control unit 28 drives the mask support unit elevating mechanism to bring the substrate suction means 24 and the mask support unit 23 relatively close to each other (FIG. 4B). At this time, the substrate suction means 24 and the mask support unit 23 are relatively close to each other (for example, until the mask M supported by the mask support unit 23 comes into contact with the substrate W sucked by the substrate suction means 24. , The mask support unit 23 can be raised). Since the substrate W and the mask M come into contact with each other, heat transfer is performed from the relatively high temperature mask M to the relatively low temperature substrate W. FIG. 4B shows a state in which the substrate W is in contact with the mask M in a state of being adsorbed by the substrate adsorption means 24, but the contact is not limited to this in the present invention, for example, the substrate W is It may be in contact with the mask M by being placed on the mask M apart from the substrate adsorption means 24.

Then, the step of bringing the mask M into close contact with the substrate W can be additionally performed from the state where the mask M and the substrate W are in contact with each other. For this purpose, the control unit 28 drives the magnetic force applying means elevating mechanism 261 to lower the magnetic force applying means 26 toward the substrate adsorption means 24. As a result, the mask M is attracted by the magnetic force from the magnetic force applying means 26 and comes into close contact with the substrate W (FIG. 4 (c)). By bringing the mask M in contact with the substrate W into close contact with the substrate W, heat transfer from the mask M to the substrate W is performed more quickly and efficiently.
At this time, it is preferable that the substrate W and the mask M are maintained in contact with each other or in close contact with each other for a predetermined time so that heat transfer from the mask M is sufficiently performed. Here, the predetermined time is preferably several seconds to several tens of seconds depending on the materials of the substrate W and the mask M and the like. If the contact or close contact time is too short, the thermalization effect of the mask M and the substrate W cannot be sufficiently obtained, and if it is too long, the overall process time increases and the productivity decreases. However, the present invention is not limited to this numerical range, and may be in another numerical range as long as the increase in the overall process time can be suppressed while the effects of thermalization and cooling can be obtained.
After the lapse of a predetermined time, the control unit 28 drives the magnetic force applying means elevating mechanism 261 to raise the magnetic force applying means 26 from the substrate attracting means 24. As a result, the mask M and the substrate W are released from the state of being in close contact with each other.

Next, in order to adjust the relative positions of the substrate W and the mask M, a first alignment (rough alignment) is performed (S104, FIG. 4D). For this purpose, first, the control unit 28 reaches the preset rough alignment measurement distance until the distance between the substrate W sucked by the substrate suction means 24 and the mask M supported by the mask support unit 23 becomes. , The substrate suction means 24 and the mask support unit 23 are relatively separated (for example, the mask support unit 23 is lowered).
When the distance between the substrate W and the mask M reaches a predetermined rough alignment measurement distance, the alignment mark of the substrate W and the mask M is imaged by the rough alignment camera, and the control unit 28 and the substrate W in _{the XYθ Z direction} The relative position of the mask M is measured, and based on this, the relative misalignment amount between them is calculated.

The control unit 28 is based on the position of the fine movement stage plate portion 222 (or the substrate adsorption means 24) measured by the laser interferometer and the relative misalignment amount calculated by the rough alignment camera. (Or the coordinates of the movement target position of the substrate adsorption means 24) are calculated.
While measuring the position of the fine movement stage plate portion 222 with a laser interferometer based on the coordinates of the movement target position, the fine movement stage plate portion 222 (or the substrate adsorption means 24) is moved to the movement target position in the _{XYθ Z direction by a magnetic levitation linear motor.} By driving up to, the relative positions of the substrate W and the mask M are adjusted. In the rough alignment of this embodiment, it has been described that the fine movement stage plate portion 222 is moved by a magnetic levitation linear motor, but a mechanical alignment stage mechanism is used according to the amount of misalignment between the substrate W and the mask M. The mask support unit 23 _{may be moved in the XYθ Z} direction to perform rough alignment.

When the rough alignment is completed, a second alignment (fine alignment) is performed for more precise adjustment of the relative positions of the substrate W and the mask M (S105, FIG. 4 (e)). Therefore, the control unit 28 first raises the mask support unit 23 by the mask support unit elevating mechanism so that the mask M comes to the fine alignment measurement position with respect to the substrate W. Then, when the mask M comes to the fine alignment measurement position with respect to the substrate W, the fine alignment camera images the alignment marks of the substrate W and the mask M, and the control unit 28 relatives the substrate W and the mask M in _{the XYθ Z direction.} Measure the amount of misalignment.
If the relative positional deviation between the substrate W and the mask M at the fine alignment measurement position is larger than a predetermined threshold value, the mask M is lowered again to separate the substrate W and the mask M, and then the control unit 28 sets the control unit 28. Fine movement stage plate part 222 measured by the laser interferometer 32
The movement target position of the fine movement stage plate portion 222 is calculated based on the position of the above and the relative displacement amount between the substrate W and the mask M.

Based on the calculated movement target position, while measuring the position of the fine movement stage plate portion 222 with a laser interferometer, the fine movement stage plate portion 222 is driven to the movement target position in the _{XYθ Z direction by a magnetic levitation linear motor.} The relative positions of the substrate W and the mask M are adjusted.
Such a process is repeated until the relative displacement amount between the substrate W and the mask M becomes smaller than a predetermined threshold value.

Then, when the relative positional deviation between the substrate W and the mask M becomes smaller than a predetermined threshold value, the film forming step is carried out (S106, FIG. 4 (f)). Therefore, the control unit 28 first raises the mask support unit 23 so that the film-forming surface of the substrate W adsorbed by the substrate adsorption means 24 is at the vapor deposition position in contact with the upper surface of the mask M. When the control unit 28 reaches the vapor deposition position where the substrate W and the mask M are in contact with each other, the control unit 28 lowers the magnetic force applying means elevating mechanism 261 and pulls the mask M through the substrate W to bring the substrate W and the mask M into close contact with each other. ..
In this process, in order to confirm whether the positional deviation between the substrate W and the mask M in the XYθ _Z direction has occurred, the relative positions of the substrate W and the mask M are measured using a fine alignment camera, and the measured relative positions are measured. When the amount of deviation of the target position is equal to or greater than a predetermined threshold value, the substrate W and the mask M are separated again to a predetermined distance (for example, the mask support unit 23 is lowered), and then the relative between the substrate W and the mask M is reached. Adjust the target position and repeat the same process.

When the relative misalignment amount of the substrate W mask M becomes smaller than a predetermined threshold value in a state where the substrate W and the mask M are located at the vapor deposition position, the film forming process is started. At this time, the control unit 28 opens the shutter of the evaporation source 25 to form the evaporated film-forming material on the substrate W via the mask M.
After vapor deposition to a desired thickness, the magnetic force applying means 26 is raised to separate the mask M, and the mask support unit 23 is lowered.

Next, the hand of the transfer robot 14 enters the vacuum vessel 21 of the film forming apparatus 11, applies zero (0) or a substrate separation voltage of opposite polarity to the electrode portion of the substrate adsorption means 24, and attaches the substrate W to the substrate adsorption means. Separate from 24. The separated substrate W is carried out from the vacuum container 21 by the transfer robot 14.
FIG. 5 is a flowchart showing a film forming method according to a second embodiment of the present invention. In the embodiment shown in FIG. 5, the heat equalization step of bringing the mask M and the substrate W into contact or close contact with each other to cool the mask M is performed between the rough alignment step and the fine alignment step. 1 Different from the embodiment. Hereinafter, the second embodiment will be described with a focus on the differences from the first embodiment.

Referring to FIG. 5, the substrate W is carried into the vacuum container 21 by the transfer robot 14 in the transfer chamber 13 in a state where the mask M is supported by the mask support unit 23 in the vacuum container 21 (S201).
Then, the control unit 28 applies a substrate adsorption voltage to the electrode portion of the substrate adsorption means 24 to adsorb the substrate W (S202).
Next, in order to adjust the relative positions of the substrate W and the mask M, a first alignment (rough alignment) is performed (S203). Therefore, first, the control unit 28 relatively approaches the substrate suction means 24 and the mask support unit 23 until the distance between the substrate W and the mask M reaches a preset rough alignment measurement distance ( For example, the mask support unit 23 is raised). Then, after measuring the relative positions of the substrate W and the mask M with a rough alignment camera and calculating the relative positional deviation amount between them, the fine movement stage plate portion 222 or the substrate adsorption means 24 is used. Drive to the movement target position.

When the rough alignment is completed, the mask M and the substrate W are brought into contact with each other or brought into close contact with each other in order to equalize the heat between the substrate W and the mask M (S204). At this time, the control unit 28 drives the mask support unit elevating mechanism to raise the mask support unit 23 and bring the mask M into contact with the substrate W. Then, if necessary, the process of bringing the mask M into close contact with the substrate W can be additionally performed from the state where the mask M and the substrate W are in contact with each other. At this time, it is preferable that the substrate W and the mask M are maintained in contact with each other or in close contact with each other for a predetermined time so that heat transfer from the mask M to the substrate W is sufficiently performed.
Next, a second alignment (fine alignment) is performed for more precise adjustment of the relative positions of the substrate W and the mask M (S205). Therefore, the control unit 28 first lowers the mask support unit 23 by the mask support unit elevating mechanism so that the mask M comes to the fine alignment measurement position with respect to the substrate W. Then, the alignment marks of the substrate W and the mask M are photographed with a fine alignment camera _{, the relative displacement amount in the XYθ Z} direction is measured, and then the fine movement stage plate portion 222 is driven to the movement target position based on this. By doing so, the relative positions of the substrate W and the mask M are adjusted.

Then, when the relative positional deviation between the substrate W and the mask M becomes smaller than a predetermined threshold value, the film forming step is carried out (S206). Therefore, the control unit 28 opens the shutter of the evaporation source 25 to deposit the evaporated film-forming material on the substrate W via the mask M.
After the film-forming material is deposited on the substrate W to a desired thickness, the hand of the transfer robot 14 enters the vacuum vessel 21 of the film-forming apparatus 11, and the electrode portion of the substrate adsorption means 24 is zero (0) or vice versa. A polar substrate separation voltage is applied to separate the substrate W from the substrate adsorption means 24. The separated substrate W is carried out from the vacuum container 21 by the transfer robot 14.
In the above description, the film forming apparatus 11 has a so-called upward vapor deposition method (depot-up) in which the film forming surface of the substrate W faces downward in the vertical direction. Is not limited to this, and the substrate W is arranged in a state of being vertically erected on the side surface side of the vacuum vessel 21, and the film formation surface of the substrate W is parallel to the direction of gravity. May be good.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.
First, the organic EL display device to be manufactured will be described. FIG. 6A shows an overall view of the organic EL display device 60, and FIG. 6B shows a cross-sectional structure of one pixel.

As shown in FIG. 6A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit that enables the display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. There are no restrictions.

FIG. 6B is a schematic partial cross-sectional view taken along the line AB of FIG. 6A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. Light emitting layer 66R, 6
The 6G and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 6B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer due to the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a circuit board (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.
Acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. To do. This opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate 63 is held by an electrostatic chuck, and the hole transport layer 65 is shared on the anode 64 in the display region. A film is formed as a layer. The hole transport layer 65 is formed by vacuum vapor deposition. In reality, the hole transport layer 65 is formed to have a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the electrostatic chuck. The substrate 63 and the mask are aligned, and a light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is arranged.
Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.
The substrate 63 formed up to the electron transport layer 67 is moved to the metal vapor deposition material film forming apparatus to form the cathode 68. The metal vapor deposition material film forming apparatus may be an evaporation heating type film forming apparatus or a sputtering type film forming apparatus.

According to the present invention, in the step of forming the insulating layer 69, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, the electron transport layer 67 and / or the cathode 68, the mask M and the substrate W are brought into contact with each other or brought into close contact with each other. After the mask M is cooled by the heat equalizing step of the above, the substrate W and the mask M are aligned. As a result, even if the mask M is heated by the radiant heat from the evaporation source 25 and expands, it is cooled before the alignment step by the heat equalization step, so that the deterioration of the alignment accuracy between the substrate W and the mask M can be suppressed. It is possible to prevent the film formation accuracy from being lowered.
After that, the substrate W is moved to the plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this embodiment, the loading and unloading of the substrate 63 between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.
The embodiment is an example of the present invention, and the present invention is not limited to the configuration of the embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film formation device 21: Vacuum container 22: Magnetic levitation stage mechanism 23: Mask support unit 24: Substrate adsorption means 25: Evaporation source 26: Magnetic force application means 27: Alignment camera unit 28: Control unit

Claims (16)

With a vacuum container
A substrate suction means provided in the vacuum vessel and having a suction surface for sucking the substrate,
A mask support unit provided in the vacuum vessel for supporting the mask, and
At least one of the substrate suction means and the mask support unit is in a first direction parallel to the suction surface, a second direction parallel to the suction surface and intersecting the first direction, and the suction surface. An alignment means that performs an alignment operation between the substrate and the mask by moving in at least one of the rotation directions about a third direction perpendicular to the substrate.
An elevating mechanism for moving at least one of the substrate suction means and the mask support unit in the third direction.
In a film forming apparatus equipped with
Before performing the alignment operation by the alignment means, the elevating mechanism is provided with a control means for bringing the substrate adsorbed by the substrate adsorption means into contact with the mask supported by the mask support unit. Membrane device. Further provided with a mask adhesion means installed on the opposite side of the suction surface and applying a force for attracting the mask supported by the mask support unit to the substrate suction means side.
The control means is characterized in that after the substrate adsorbed by the substrate adsorption means is brought into contact with the mask supported by the mask support unit, the mask is brought into close contact with the substrate by the mask adhesion means. Item 1. The film forming apparatus according to Item 1. The film forming apparatus according to claim 1 or 2, wherein the control means brings the substrate and the mask into contact with each other for a predetermined time. The film forming apparatus according to any one of claims 1 to 3, wherein the substrate adsorption means has an electrostatic chuck. The film forming apparatus according to any one of claims 1 to 4, further comprising a cooling means for cooling the substrate adsorption means. The first alignment camera that images the first position of the substrate sucked by the substrate suction means and the mask supported by the mask support unit, and the second position different from the first position are imaged, and the above-mentioned Further equipped with a second alignment camera having a higher resolution than the first alignment camera,
The control means is characterized in that the substrate sucked by the substrate suction means by the elevating mechanism and the mask supported by the mask support unit are brought into contact with each other before the alignment operation is performed by the second alignment camera. The film forming apparatus according to any one of claims 1 to 5. The control means is characterized in that the substrate sucked by the substrate suction means by the elevating mechanism and the mask supported by the mask support unit are brought into contact with each other before the alignment operation is performed by the first alignment camera. The film forming apparatus according to claim 6. The film forming apparatus according to any one of claims 1 to 7.
A mask stock device for storing masks and
A transport device for transporting substrates and masks,
An electronic device manufacturing apparatus comprising. The substrate and the mask were centered on a first direction parallel to the substrate surface, a second direction parallel to the substrate surface and intersecting the first direction, and a third direction perpendicular to the substrate surface. An alignment step in which the substrate and the mask are aligned by moving in at least one of the rotation directions.
A film forming method including a film forming step of forming a film on the substrate via the mask after the alignment step.
A film forming method comprising a contact step of relatively moving the substrate and the mask in the third direction to bring them into contact with each other before the alignment step. The film forming method according to claim 9, further comprising a close contact step of bringing the mask and the substrate into close contact between the contact step and the alignment step. The film forming method according to claim 9 or 10, wherein in the contact step, the substrate and the mask are brought into contact with each other for a predetermined time. The film forming method according to any one of claims 9 to 11, further comprising an adsorption step of adsorbing the substrate by an electrostatic chuck before the contact step. The film forming method according to claim 12, further comprising a cooling step of cooling the electrostatic chuck by a cooling means. The alignment step includes a first alignment step and a second alignment step performed after the first alignment step.
The film forming method according to any one of claims 9 to 13, wherein the contact step is performed before the second alignment step. The film forming method according to claim 14, wherein the contact step is performed before the first alignment step. A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to any one of claims 9 to 15.

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