WO2024119693A1 - Led chip having narrow light emission peak, and manufacturing method therefor - Google Patents

Led chip having narrow light emission peak, and manufacturing method therefor Download PDF

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Publication number
WO2024119693A1
WO2024119693A1 PCT/CN2023/089197 CN2023089197W WO2024119693A1 WO 2024119693 A1 WO2024119693 A1 WO 2024119693A1 CN 2023089197 W CN2023089197 W CN 2023089197W WO 2024119693 A1 WO2024119693 A1 WO 2024119693A1
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layer
led chip
type semiconductor
dielectric filter
semiconductor layer
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PCT/CN2023/089197
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French (fr)
Chinese (zh)
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王立
王伟
莫春兰
吴小明
蒋恺
李新华
刘志华
Original Assignee
南昌大学
南昌硅基半导体科技有限公司
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Publication of WO2024119693A1 publication Critical patent/WO2024119693A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the present invention relates to the field of semiconductor light-emitting devices, and in particular to a narrow light-emitting peak LED chip and a preparation method thereof.
  • LEDs Light-emitting diodes
  • micro-nano processing technology the size of LEDs has been further miniaturized, and Micro-LEDs with integrated high-density pixel light-emitting units have been developed.
  • Micro-LEDs have the advantages of low power consumption, long service life, fast response and wide viewing angle, and have important application potential in display and visible light communication.
  • the half-width of the emission peak of Micro-LED will affect the display color threshold and color purity.
  • the half-width of the emission peak of conventional Micro-LED is as high as 20 nm.
  • the half-width of the emission peak of Micro-LED needs to be further reduced.
  • AlxGayIn (1-xy) N is a key material for Micro-LED full-color display.
  • the high In component will cause the phase separation of AlxGayIn (1-xy) N, resulting in a relatively wide emission peak of green and red Micro-LED, which limits the display threshold of Micro-LED.
  • the half-width of the emission peak of Micro-LED can be reduced by adjusting the epitaxial growth technology, such as doping with rare metal Eu, but the rare earth doping preparation process is difficult and wastes rare earth resources.
  • the first object of the present invention is to provide a narrow luminous peak LED chip.
  • the second object of the present invention is to provide a method for preparing a narrow luminous peak LED chip, which can reduce the luminous half-width and improve the directivity of the front light output to solve the problems of luminous peak width and light crosstalk of existing Micro-LEDs.
  • the first object of the present invention is achieved by:
  • a narrow luminous peak LED chip comprises an adhesive layer, a P-type electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, and an N-type electrode; characterized in that: a dielectric filter layer is provided on the upper surface of the N-type semiconductor layer and on the outer side walls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer, the luminous wavelength of the active layer is ⁇ 0 , the dielectric filter layer has high transmittance in the wavelength range of ⁇ 0 ⁇ , ⁇ 10nm, 2 ⁇ is the width of the high transmittance range of the dielectric filter layer; it has high reflectivity in the wavelength ranges of ( ⁇ 0 - ⁇ )- ⁇ 1 >20 nm and ⁇ 2 -( ⁇ 0 + ⁇ )>20 nm, ⁇ 1 and ⁇ 2 are the boundary wavelengths on both sides of the high reflectivity of the dielectric filter layer, respectively.
  • the active layer is made of AlxGayIn (1-xy) N semiconductor material.
  • the light emission wavelength ⁇ 0 of the active layer is >600 nm.
  • the LED chip structure is a vertical structure.
  • the size of the LED chip is less than 50 ⁇ m, and a reflector is provided on the side wall of the LED chip.
  • a transparent conductive layer is provided on the P-type semiconductor layer, a Bragg reflector layer with an opening is provided on the transparent conductive layer, a P-type electrode layer is provided on the Bragg reflector layer with an opening, and the P-type electrode layer is connected to the transparent conductive layer through the opening.
  • the second object of the present invention is achieved by:
  • a method for preparing a narrow luminous peak LED chip comprises the following steps:
  • An N-type semiconductor layer, an active layer, and a P-type semiconductor layer are sequentially grown on a substrate, and the light emission wavelength of the active layer is ⁇ 0 ;
  • a dielectric filter layer is provided on the upper surface of the N-type semiconductor layer of the structure obtained in step (6) and on the outer side walls of the N-type semiconductor layer, the active layer, the P-type semiconductor layer and the P-electrode layer.
  • the dielectric filter layer has high transmittance in the wavelength range of ⁇ 0 ⁇ ⁇ ( ⁇ ⁇ 10 nm) (2 ⁇ is the width of the high transmittance range of the dielectric filter layer) and high reflectivity in the wavelength ranges of ( ⁇ 0 - ⁇ ) - ⁇ 1 > 20 nm and ⁇ 2 - ( ⁇ 0 + ⁇ ) > 20 nm.
  • ⁇ 1 and ⁇ 2 are boundary wavelengths of high reflectivity of the dielectric filter layer.
  • step (7) the dielectric filter layer of the structure obtained above the opening;
  • An N-type electrode is prepared in the hole of the structure obtained in step (8) so as to contact the N-GaN layer.
  • a transparent conductive layer is prepared on the P-type semiconductor layer, a Bragg reflector layer with openings is provided on the transparent conductive layer, a P-type electrode layer is prepared on the Bragg reflector layer with openings, and the P-type electrode layer is connected to the transparent conductive layer through the openings.
  • reflectors are prepared on the side walls and the inner area of the top edge of the dielectric filter layer of the structure obtained in step (9).
  • the dielectric filter layer has high transmittance in the wavelength range of ⁇ 0 ⁇ ( ⁇ 10nm) (2 ⁇ is the width of the high transmittance range of the dielectric filter layer), and has high reflectivity in the wavelength range of ( ⁇ 0 - ⁇ )- ⁇ 1 >20 nm and ⁇ 2 -( ⁇ 0 + ⁇ )>20 nm ( ⁇ 1 and ⁇ 2 are the boundary wavelengths on both sides of the high reflectivity of the dielectric filter layer, respectively), which plays a filtering role in the light emitted by the LED chip, narrows the luminous spectrum of the Micro-LED, and increases the spectral purity, thereby improving the threshold of the Micro-LED display;
  • the light emission of LED chips comes from the recombination of carriers in quantum wells.
  • the size of the quantum well band gap is affected by the operating temperature and current density, and the wavelength and peak width of the emitted light will change.
  • the dielectric filter layer is prepared on the upper surface of the N-type semiconductor layer of Micro-LED and on the outer wall of the N-type semiconductor layer, active layer, and P-type semiconductor layer.
  • the wavelength and half-peak width of the emitted light depend on the filtering bandwidth of the dielectric filter layer, which improves the light emission stability of Micro-LED;
  • Preparing reflectors on the side walls of the Micro-LED chip can reduce the light emitted from the side walls, and at the same time reflect the light emitted from the side walls back into the LED chip and emit it from the front, thereby improving the front directionality, thereby reducing the light crosstalk effect between adjacent Micro-LED chips and improving the contrast and clarity of the Micro-LED display.
  • FIG1 is a schematic structural diagram corresponding to step (1) in the preparation method provided by the present invention.
  • FIG2 is a schematic structural diagram corresponding to step (2) in the preparation method provided by the present invention.
  • FIG3 is a schematic structural diagram corresponding to step (3) in the preparation method provided by the present invention.
  • FIG4 is a schematic structural diagram corresponding to step (4) in the preparation method provided by the present invention.
  • FIG5 is a schematic structural diagram corresponding to step (5) in the preparation method provided by the present invention.
  • FIG6 is a schematic structural diagram corresponding to step (6) in the preparation method provided by the present invention.
  • FIG7 is a schematic structural diagram corresponding to step (7) in the preparation method provided by the present invention.
  • FIG8 is a schematic structural diagram corresponding to step (8) in the preparation method provided by the present invention.
  • FIG9 is a schematic structural diagram corresponding to step (9) in the preparation method provided by the present invention.
  • FIG10 is a schematic diagram of a dielectric filter layer in Example 1.
  • FIG11 is a reflection spectrum diagram of the dielectric filter layer prepared in Example 1.
  • FIG12 is an experimental result of the electroluminescence spectrum of the narrow luminescence peak LED chip prepared in Example 1;
  • FIG13 is a simulated reflection spectrum diagram of the dielectric filter layer of Example 2.
  • FIG14 is a schematic diagram of the structure of a narrow luminous peak LED chip prepared in Example 3.
  • FIG15 is a schematic diagram of the structure of a narrow luminous peak LED chip prepared in Example 4.
  • a narrow luminous peak LED chip includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , a bonding layer 6 , a substrate 7 , a dielectric filter layer 8 , and an N-type electrode 9 .
  • Example 1 a method for preparing a narrow luminous peak LED chip comprises the following steps:
  • an LED epitaxial structure as shown in FIG. 1 is obtained by MOCVD epitaxial growth on a Si substrate 1;
  • a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
  • an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device
  • the substrate 7 is bonded to the adhesive layer 6 through a bonding process
  • the Si substrate 1 is removed by a wet etching process
  • a dielectric filter layer 8 is deposited by PECVD.
  • the structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 .
  • the reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
  • a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
  • an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
  • the luminous peak LED chip prepared in Example 1 has a narrower luminous peak, as shown in FIG. 12 .
  • a narrow luminous peak LED chip includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , a bonding layer 6 , a substrate 7 , a dielectric filter layer 8 , and an N-type electrode 9 .
  • Example 2 a method for preparing a narrow luminous peak LED chip comprises the following steps:
  • an LED epitaxial structure as shown in FIG. 1 is obtained by MOCVD epitaxial growth on a Si substrate 1;
  • a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
  • an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device
  • the substrate 7 is bonded to the adhesive layer 6 through a bonding process
  • the Si substrate 1 is removed by a wet etching process
  • a dielectric filter layer 8 is deposited, wherein the thickness of SiO 2 is 107 nm, the thickness of TiO 2 is 66 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG13 .
  • the reflectivity of the dielectric filter layer 8 in the wavelength range of 550--658 nm and 666--815 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 658--666 nm.
  • the structure obtained after this step is shown in FIG6 ;
  • a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
  • an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
  • a narrow luminous peak LED chip as shown in FIG14 , includes an N-type semiconductor layer 2, an active layer 3, a P-type semiconductor layer 4, a P-type electrode layer 5, a bonding layer 6, a substrate 7, a dielectric filter layer 8, an N-type electrode 9, a transparent conductive layer 11, and a Bragg reflector layer 12.
  • Example 3 a method for preparing a narrow luminous peak LED chip comprises the following steps:
  • an LED epitaxial structure is obtained by MOCVD epitaxial growth on a Si substrate 1;
  • a transparent conductive layer 11 is formed on the P-type semiconductor layer 4, a Bragg reflector layer 12 with an opening is provided on the transparent conductive layer 11, a P-type electrode layer 5 is formed on the Bragg reflector layer with an opening, and the P-type electrode layer 5 is connected to the transparent conductive layer 11 through the opening;
  • the dielectric filter layer 8 is deposited by using PECVD.
  • the structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 .
  • the reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
  • an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
  • a narrow luminous peak LED chip includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , an adhesive layer 6 , a substrate 7 , a dielectric filter layer 8 , an N-type electrode 9 , and a reflector 10 .
  • Example 4 a method for preparing a narrow luminous peak LED chip comprises the following steps:
  • an LED epitaxial structure is obtained by MOCVD epitaxial growth on a Si substrate 1;
  • a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
  • an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device
  • the substrate 7 is bonded to the adhesive layer 6 through a bonding process
  • the Si substrate 1 is removed by a wet etching process
  • a dielectric filter layer 8 is deposited by PECVD.
  • the structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 .
  • the reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
  • a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
  • an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8;
  • a reflector 10 is prepared on the sidewalls and the inner area of the top edge of the dielectric filter layer using an electron beam evaporation device.

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Abstract

Disclosed in the present invention are an LED chip having a narrow light emission peak, and a manufacturing method therefor. The LED chip at least comprises a P-type electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, an N-type electrode, a dielectric filter layer, and a bonding layer. The dielectric filter layer is grown on the N-type semiconductor layer of the LED chip, and the outer sidewalls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer; the dielectric filter layer has high transmissivity for light in a specific wavelength range of the LED chip, and has high reflectivity for light having other wavelengths, so that an LED light emission peak becomes narrow. Reflecting mirrors are manufactured at the sidewalls of the chip, and reflects light emitted by the sidewalls back to the LED chip, thereby reducing the light crosstalk effect of light emitted by the sidewalls, and improving the front light-emitting efficiency. The LED chip having the narrow light emission peak in the present invention reduces the light emission full width at half maximum, improves the light emission directivity, and reduces the light crosstalk.

Description

一种窄发光峰LED芯片及其制备方法A narrow luminous peak LED chip and preparation method thereof 技术领域Technical Field
本发明涉及半导体发光器件领域，尤其是涉及一种窄发光峰LED芯片及其制备方法。The present invention relates to the field of semiconductor light-emitting devices, and in particular to a narrow light-emitting peak LED chip and a preparation method thereof.
背景技术Background technique
发光二极管（LED）以节能、高效、寿命长等优势已逐渐成为照明和显示领域的主流技术，近年来随着微纳加工技术的不断发展，LED的尺寸进一步小型化，集成高密度像素发光单元的Micro-LED。Micro-LED具有功耗低、使用寿命长、响应度快、可视角度广的优势，在显示和可见光通讯中具有重要的应用潜力。Light-emitting diodes (LEDs) have gradually become the mainstream technology in the field of lighting and display due to their advantages of energy saving, high efficiency and long life. In recent years, with the continuous development of micro-nano processing technology, the size of LEDs has been further miniaturized, and Micro-LEDs with integrated high-density pixel light-emitting units have been developed. Micro-LEDs have the advantages of low power consumption, long service life, fast response and wide viewing angle, and have important application potential in display and visible light communication.
Micro-LED的发光峰半高宽会影响显示色阈、色纯度，目前，常规Micro-LED的发光半高宽达20 nm，为了提高Micro-LED显示的显示阈值和色纯度等，需要进一步降低Micro-LED的发光半高宽。Al xGa yIn （1-x-y）N作为Micro-LED全彩显示的关键材料，然而高In组分会导致Al xGa yIn （1-x-y）N的相分离，从而导致绿光和红光Micro-LED的发光峰比较宽，这限制了Micro-LED显示阈值。为了更好地发展Micro-LED全彩显示，减小发光半高宽，提高Micro-LED显示阈值应该得到关注和解决。通过外延生长技术调整可以减小Micro-LED的发光峰半高宽，比如掺杂稀有金属Eu，但是稀土掺杂制备工艺困难，且浪费稀土资源。 The half-width of the emission peak of Micro-LED will affect the display color threshold and color purity. At present, the half-width of the emission peak of conventional Micro-LED is as high as 20 nm. In order to improve the display threshold and color purity of Micro-LED display, the half-width of the emission peak of Micro-LED needs to be further reduced. AlxGayIn (1-xy) N is a key material for Micro-LED full-color display. However , the high In component will cause the phase separation of AlxGayIn (1-xy) N, resulting in a relatively wide emission peak of green and red Micro-LED, which limits the display threshold of Micro-LED. In order to better develop Micro-LED full-color display, reducing the half-width of the emission peak and increasing the display threshold of Micro-LED should be paid attention to and solved. The half-width of the emission peak of Micro-LED can be reduced by adjusting the epitaxial growth technology, such as doping with rare metal Eu, but the rare earth doping preparation process is difficult and wastes rare earth resources.
另外，由于多量子阱中的强极化场作用，导致Micro-LED的波长会随着电流密度增加往短波长移动，这是Micro-LED一直存在的的问题，会严重影响Micro-LED显示稳定性。In addition, due to the strong polarization field in the multi-quantum wells, the wavelength of Micro-LED will move toward a shorter wavelength as the current density increases. This is a problem that has always existed in Micro-LED and will seriously affect the stability of Micro-LED display.
技术问题technical problem
本发明的第一个目的在于提供一种窄发光峰LED芯片。The first object of the present invention is to provide a narrow luminous peak LED chip.
本发明的第二个目的在于提供一种窄发光峰LED芯片的制备方法，该制备方法能减小发光半高宽，提高正面出光方向性，以解决现有Micro-LED的发光峰宽和光串扰的问题。The second object of the present invention is to provide a method for preparing a narrow luminous peak LED chip, which can reduce the luminous half-width and improve the directivity of the front light output to solve the problems of luminous peak width and light crosstalk of existing Micro-LEDs.
技术解决方案Technical Solutions
本发明的第一个目的是这样实现的：The first object of the present invention is achieved by:
一种窄发光峰LED芯片，包括粘结层、P型电极层、P型半导体层、有源层、N型半导体层、N型电极；其特征在于：在N型半导体层的上面和N型半导体层、有源层、 P型半导体层的外侧壁上均设有介质滤波层，所述有源层的发光波长为λ 0，介质滤波层在λ 0±Δλ的波长范围具有高透射性，Δλ≤10nm ，2Δλ为介质滤波层高透射范围宽度；在（λ 0-Δλ）-λ 1>20 nm和λ 2-（λ 0+Δλ）>20 nm波长范围内具有高反射率，λ 1和λ 2分别是介质滤波层高反射率两边的边界波长。 A narrow luminous peak LED chip comprises an adhesive layer, a P-type electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, and an N-type electrode; characterized in that: a dielectric filter layer is provided on the upper surface of the N-type semiconductor layer and on the outer side walls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer, the luminous wavelength of the active layer is λ 0 , the dielectric filter layer has high transmittance in the wavelength range of λ 0 ±Δλ, Δλ≤10nm, 2Δλ is the width of the high transmittance range of the dielectric filter layer; it has high reflectivity in the wavelength ranges of (λ 0 -Δλ)-λ 1 >20 nm and λ 2 -(λ 0 +Δλ)>20 nm, λ 1 and λ 2 are the boundary wavelengths on both sides of the high reflectivity of the dielectric filter layer, respectively.
优选地，所述有源层是由Al xGa yIn （1-x-y）N半导体材料制备。 Preferably , the active layer is made of AlxGayIn (1-xy) N semiconductor material.
进一步优选地，所述有源层的发光波长λ 0>600 nm。 Further preferably, the light emission wavelength λ 0 of the active layer is >600 nm.
优选地，所述的LED芯片结构为垂直结构。Preferably, the LED chip structure is a vertical structure.
在一种实施方案中，所述介质滤波层是两种折射率不同的介质材料交替设置，介质滤波层结构为H（LH） k（HL） kH或（HL） k（LH） k； L为低折射率材料SiO 2, H为高折射率材料SiN x或TiO 2；介质滤波层中的每层介质材料的厚度为d=λ 0/（4n），n为该层介质材料的折射率；k＝4--20，k为介质滤波层的周期数。 In one embodiment, the dielectric filter layer is composed of two dielectric materials with different refractive indices arranged alternately, and the dielectric filter layer structure is H (LH) k (HL) k H or (HL) k (LH) k ; L is a low refractive index material SiO 2 , and H is a high refractive index material SiN x or TiO 2 ; the thickness of each layer of dielectric material in the dielectric filter layer is d = λ 0 / (4n), n is the refractive index of the layer of dielectric material; k = 4--20, k is the number of periods of the dielectric filter layer.
在一种典型的实施方案，所述LED芯片的尺寸小于50μm，且在LED芯片的侧壁设有反射镜。In a typical embodiment, the size of the LED chip is less than 50 μm, and a reflector is provided on the side wall of the LED chip.
优选地，在P型半导体层上设有透明导电层，在透明导电层上设有开孔的布拉格反射镜层，在开孔的布拉格反射镜层上设有P型电极层，P型电极层通过开孔与透明导相连。Preferably, a transparent conductive layer is provided on the P-type semiconductor layer, a Bragg reflector layer with an opening is provided on the transparent conductive layer, a P-type electrode layer is provided on the Bragg reflector layer with an opening, and the P-type electrode layer is connected to the transparent conductive layer through the opening.
本发明的第二个目的是这样实现的：The second object of the present invention is achieved by:
一种窄发光峰LED芯片的制备方法，包括以下步骤：A method for preparing a narrow luminous peak LED chip comprises the following steps:
（1）在衬底上依次生长N型半导体层、有源层以及P型半导体层，有源层的发光波长为λ 0； (1) An N-type semiconductor layer, an active layer, and a P-type semiconductor layer are sequentially grown on a substrate, and the light emission wavelength of the active layer is λ 0 ;
（2）在P型半导体层上生长P型电极层；(2) growing a P-type electrode layer on the P-type semiconductor layer;
（3）在生长P型电极层上生长粘结层；(3) growing a bonding layer on the P-type electrode layer;
（4）将基板与粘结层键合；(4) bonding the substrate to the adhesive layer;
（5）去除步骤（4）所得结构的衬底；(5) removing the substrate of the structure obtained in step (4);
（6）将步骤(5)所得结构的N型半导体层、有源层、 P型半导体层的侧边刻蚀；(6) etching the sides of the N-type semiconductor layer, active layer, and P-type semiconductor layer of the structure obtained in step (5);
（7）在步骤（6）所得结构的N型半导体层的上面和N型半导体层、有源层、 P型半导体层、P电极层的外侧壁上设有介质滤波层，介质滤波层在λ 0 ±Δλ（Δλ≤10nm）的波长范围具有高透射性（2Δλ即介质滤波层高透射范围宽度），在（λ 0-Δλ）-λ 1>20 nm和λ 2-（λ 0+Δλ）>20 nm波长范围内具有高反射率，λ 1和λ 2是介质滤波层高反率的边界波长； (7) A dielectric filter layer is provided on the upper surface of the N-type semiconductor layer of the structure obtained in step (6) and on the outer side walls of the N-type semiconductor layer, the active layer, the P-type semiconductor layer and the P-electrode layer. The dielectric filter layer has high transmittance in the wavelength range of λ 0 ± Δλ (Δλ ≤ 10 nm) (2Δλ is the width of the high transmittance range of the dielectric filter layer) and high reflectivity in the wavelength ranges of (λ 0 - Δλ) - λ 1 > 20 nm and λ 2 - (λ 0 + Δλ) > 20 nm. λ 1 and λ 2 are boundary wavelengths of high reflectivity of the dielectric filter layer.
（8）在步骤（7）所得结构的介质滤波层的上面开孔;(8) in step (7) the dielectric filter layer of the structure obtained above the opening;
（9）在步骤（8）所得结构的孔内制备与N-GaN层接触的N型电极。(9) An N-type electrode is prepared in the hole of the structure obtained in step (8) so as to contact the N-GaN layer.
优选的，所述步骤（2）中，在P型半导体层上制备透明导电层，在透明导电层上设有开孔的布拉格反射镜层，在开孔的布拉格反射镜层上制备P型电极层，P型电极层通过开孔与透明导电层相连。Preferably, in step (2), a transparent conductive layer is prepared on the P-type semiconductor layer, a Bragg reflector layer with openings is provided on the transparent conductive layer, a P-type electrode layer is prepared on the Bragg reflector layer with openings, and the P-type electrode layer is connected to the transparent conductive layer through the openings.
优选的，在步骤（9）所得结构的介质滤波层的侧壁和顶上边缘向内的区域制备反射镜。Preferably, reflectors are prepared on the side walls and the inner area of the top edge of the dielectric filter layer of the structure obtained in step (9).
有益效果Beneficial Effects
本发明的有益效果：Beneficial effects of the present invention:
A、窄发光峰。通过在LED芯片的N型半导体层的上面和N型半导体层、有源层、 P型半导体层的外侧壁制备介质滤波层，介质滤波层在λ 0 ±Δλ（Δλ≤10nm）的波长范围具有高透射性（2Δλ即介质滤波层高透射范围宽度），在（λ 0-Δλ）-λ 1>20 nm和λ 2-（λ 0+Δλ）>20 nm波长范围内具有高反射率（λ1和λ2分别是介质滤波层高反射率两边的边界波长）的特点，起到对LED芯片发射光的滤波作用，使Micro-LED的发光光谱变窄，光谱纯度更高，从而提高Micro-LED显示的阈值； A. Narrow luminescence peak. By preparing a dielectric filter layer on the upper surface of the N-type semiconductor layer of the LED chip and on the outer side walls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer, the dielectric filter layer has high transmittance in the wavelength range of λ 0 ±Δλ (Δλ≤10nm) (2Δλ is the width of the high transmittance range of the dielectric filter layer), and has high reflectivity in the wavelength range of (λ 0 -Δλ)-λ 1 >20 nm and λ 2 -(λ 0 +Δλ)>20 nm (λ1 and λ2 are the boundary wavelengths on both sides of the high reflectivity of the dielectric filter layer, respectively), which plays a filtering role in the light emitted by the LED chip, narrows the luminous spectrum of the Micro-LED, and increases the spectral purity, thereby improving the threshold of the Micro-LED display;
B、稳定性好。LED芯片的发光来自于量子阱内载流子复合发光，量子阱带隙的大小受到工作温度和电流密度大小的影响，出射光的波长和峰宽会发生变化，而在Micro-LED的N型半导体层的上面和N型半导体层、有源层、 P型半导体层的外侧壁制备介质滤波层，出射光的波长和半峰宽取决于介质滤波层的滤波带宽，提高了Micro-LED的发光稳定性；B. Good stability. The light emission of LED chips comes from the recombination of carriers in quantum wells. The size of the quantum well band gap is affected by the operating temperature and current density, and the wavelength and peak width of the emitted light will change. The dielectric filter layer is prepared on the upper surface of the N-type semiconductor layer of Micro-LED and on the outer wall of the N-type semiconductor layer, active layer, and P-type semiconductor layer. The wavelength and half-peak width of the emitted light depend on the filtering bandwidth of the dielectric filter layer, which improves the light emission stability of Micro-LED;
C、方向性好。在Micro-LED芯片的侧壁制备反射镜可以减少侧壁出光，同时把侧壁出光反射回LED芯片内部并从正面发出，提高正面方向性，从而减少相邻Micro-LED芯片之间的光串扰效应，提高Micro-LED显示的对比度和清晰度。C. Good directionality. Preparing reflectors on the side walls of the Micro-LED chip can reduce the light emitted from the side walls, and at the same time reflect the light emitted from the side walls back into the LED chip and emit it from the front, thereby improving the front directionality, thereby reducing the light crosstalk effect between adjacent Micro-LED chips and improving the contrast and clarity of the Micro-LED display.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明提供的制备方法中步骤（1）对应的结构示意图；FIG1 is a schematic structural diagram corresponding to step (1) in the preparation method provided by the present invention;
图2为本发明提供的制备方法中步骤（2）对应的结构示意图；FIG2 is a schematic structural diagram corresponding to step (2) in the preparation method provided by the present invention;
图3为本发明提供的制备方法中步骤（3）对应的结构示意图；FIG3 is a schematic structural diagram corresponding to step (3) in the preparation method provided by the present invention;
图4为本发明提供的制备方法中步骤（4）对应的结构示意图；FIG4 is a schematic structural diagram corresponding to step (4) in the preparation method provided by the present invention;
图5为本发明提供的制备方法中步骤（5）对应的结构示意图；FIG5 is a schematic structural diagram corresponding to step (5) in the preparation method provided by the present invention;
图6为本发明提供的制备方法中步骤（6）对应的结构示意图；FIG6 is a schematic structural diagram corresponding to step (6) in the preparation method provided by the present invention;
图7为本发明提供的制备方法中步骤（7）对应的结构示意图；FIG7 is a schematic structural diagram corresponding to step (7) in the preparation method provided by the present invention;
图8为本发明提供的制备方法中步骤（8）对应的结构示意图；FIG8 is a schematic structural diagram corresponding to step (8) in the preparation method provided by the present invention;
图9为本发明提供的制备方法中步骤（9）对应的结构示意图；FIG9 is a schematic structural diagram corresponding to step (9) in the preparation method provided by the present invention;
图10为实施例1中介质滤波层的示意图；FIG10 is a schematic diagram of a dielectric filter layer in Example 1;
图11为实施例1制备的介质滤波层的反射光谱图；FIG11 is a reflection spectrum diagram of the dielectric filter layer prepared in Example 1;
图12为实施例1制备的窄发光峰LED芯片的电致发光光谱的实验结果；FIG12 is an experimental result of the electroluminescence spectrum of the narrow luminescence peak LED chip prepared in Example 1;
图13为实施例2介质滤波层的反射光谱模拟图；FIG13 is a simulated reflection spectrum diagram of the dielectric filter layer of Example 2;
图14为实施例3制备的窄发光峰LED芯片的结构示意图；FIG14 is a schematic diagram of the structure of a narrow luminous peak LED chip prepared in Example 3;
图15为实施例4制备的窄发光峰LED芯片的结构示意图；FIG15 is a schematic diagram of the structure of a narrow luminous peak LED chip prepared in Example 4;
附图标记说明：1、衬底；2、N型半导体层；3、有源层；4、P型半导体层；5、P电极层；6、粘结层；7、基板；8、介质滤波层；9、N型电极；10、反射镜；11、透明导电层；12、布拉格反射镜层。Explanation of the accompanying drawings: 1. substrate; 2. N-type semiconductor layer; 3. active layer; 4. P-type semiconductor layer; 5. P-electrode layer; 6. bonding layer; 7. base plate; 8. dielectric filter layer; 9. N-type electrode; 10. reflector; 11. transparent conductive layer; 12. Bragg reflector layer.
本发明的最佳实施方式Best Mode for Carrying Out the Invention
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合具体实施例进行详细描述。In order to make the technical problems to be solved, technical solutions and advantages of the present invention more clear, they are described in detail below in conjunction with specific embodiments.
实施例Example
一窄发光峰LED芯片，如图9所示，包括N型半导体层2、有源层3、P型半导体层4、P型电极层5、粘结层6、基板7、介质滤波层8、N型电极9。A narrow luminous peak LED chip, as shown in FIG9 , includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , a bonding layer 6 , a substrate 7 , a dielectric filter layer 8 , and an N-type electrode 9 .
实施例1中，一窄发光峰LED芯片的制备方法，包括以下步骤：In Example 1, a method for preparing a narrow luminous peak LED chip comprises the following steps:
（1）如图1所示，在Si衬底1上通过MOCVD外延生长得到如图1所示的LED外延结构；(1) As shown in FIG. 1 , an LED epitaxial structure as shown in FIG. 1 is obtained by MOCVD epitaxial growth on a Si substrate 1;
（2）如图2所示，利用电子束蒸发设备在P型半导体层4上蒸镀P型电极层5；(2) As shown in FIG. 2 , a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
（3）如图3所示，利用电子束蒸发设备在P型电极层5上蒸镀粘结层6；(3) As shown in FIG. 3 , an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device;
（4）如图4所示，通过键合工艺，将基板7与粘结层6上键合；(4) As shown in FIG. 4 , the substrate 7 is bonded to the adhesive layer 6 through a bonding process;
（5）如图5所示，用湿法腐蚀工艺去除Si衬底1；(5) As shown in FIG. 5 , the Si substrate 1 is removed by a wet etching process;
（6）如图6所示，刻蚀N型半导体层、有源层、 P型半导体层的侧边；(6) As shown in FIG6 , etching the sides of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer;
（7）如图7所示，使用气相沉积（PECVD）沉积介质滤波层8，所述介质滤波层8的结构如图10所示，其中SiO 2 厚度是108 nm，SiN X厚度是78 nm，介质滤波层8的反射光谱如图11所示，介质滤波层8在580--630nm和640--705nm波长范围内的反射率大于90%，介质滤波层8在630--640nm具有高透射率； (7) As shown in FIG. 7 , a dielectric filter layer 8 is deposited by PECVD. The structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 . The reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
（8）如图8所示，使用湿法腐蚀或干法刻蚀在介质滤波层8的上面开设用于放置 N型电极9的孔；(8) As shown in FIG8 , a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
（9）如图9所示，在介质滤波层8上面开设的孔内制备N型电极9。(9) As shown in FIG. 9 , an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
本实施例1所制得的发光峰LED芯片与参比LED相比，发光峰更窄，如图12所示。Compared with the reference LED, the luminous peak LED chip prepared in Example 1 has a narrower luminous peak, as shown in FIG. 12 .
本发明的实施方式Embodiments of the present invention
实施例2Example 2
一窄发光峰LED芯片，如图9所示，包括N型半导体层2、有源层3、P型半导体层4、P型电极层5、粘结层6、基板7、介质滤波层8、N型电极9。A narrow luminous peak LED chip, as shown in FIG9 , includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , a bonding layer 6 , a substrate 7 , a dielectric filter layer 8 , and an N-type electrode 9 .
实施例2中，一窄发光峰LED芯片的制备方法，包括以下步骤：In Example 2, a method for preparing a narrow luminous peak LED chip comprises the following steps:
（1）如图1所示，在Si衬底1上通过MOCVD外延生长得到如图1所示的LED外延结构；(1) As shown in FIG. 1 , an LED epitaxial structure as shown in FIG. 1 is obtained by MOCVD epitaxial growth on a Si substrate 1;
（2）如图2所示，利用电子束蒸发设备在P型半导体层4上蒸镀P型电极层5；(2) As shown in FIG. 2 , a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
（3）如图3所示，利用电子束蒸发设备在P型电极层5上蒸镀粘结层6；(3) As shown in FIG. 3 , an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device;
（4）如图4所示，通过键合工艺，将基板7与粘结层6上键合；(4) As shown in FIG. 4 , the substrate 7 is bonded to the adhesive layer 6 through a bonding process;
（5）如图5所示，用湿法腐蚀工艺去除Si衬底1；(5) As shown in FIG. 5 , the Si substrate 1 is removed by a wet etching process;
（6）如图6所示，刻蚀N型半导体层、有源层、 P型半导体层的侧边；(6) As shown in FIG6 , etching the sides of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer;
（7）如图7所示，沉积介质滤波层8，其中SiO 2 厚度是107 nm，TiO 2厚度是66 nm，介质滤波层8的反射光谱如图13所示，介质滤波层8在550--658nm和666--815nm波长范围内的反射率大于90%，介质滤波层8在658--666nm具有高透射率。本步骤后得到的结构如图6所示； (7) As shown in FIG7 , a dielectric filter layer 8 is deposited, wherein the thickness of SiO 2 is 107 nm, the thickness of TiO 2 is 66 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG13 . The reflectivity of the dielectric filter layer 8 in the wavelength range of 550--658 nm and 666--815 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 658--666 nm. The structure obtained after this step is shown in FIG6 ;
（8）如图8所示，使用湿法腐蚀或干法刻蚀在介质滤波层8的上面开设用于放置 N型电极9的孔；(8) As shown in FIG8 , a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
（9）如图9所示，在介质滤波层8上面开设的孔内制备N型电极9。(9) As shown in FIG. 9 , an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
实施例Example
一窄发光峰LED芯片，如图14所示，包括N型半导体层2、有源层3、P型半导体层4、P型电极层5、粘结层6、基板7、介质滤波层8、N型电极9、透明导电层11、布拉格反射镜层12。A narrow luminous peak LED chip, as shown in FIG14 , includes an N-type semiconductor layer 2, an active layer 3, a P-type semiconductor layer 4, a P-type electrode layer 5, a bonding layer 6, a substrate 7, a dielectric filter layer 8, an N-type electrode 9, a transparent conductive layer 11, and a Bragg reflector layer 12.
实施例3中，一窄发光峰LED芯片的制备方法，包括以下步骤：In Example 3, a method for preparing a narrow luminous peak LED chip comprises the following steps:
（1）如图1所示，在Si衬底1上通过MOCVD外延生长得到LED外延结构；(1) As shown in FIG. 1 , an LED epitaxial structure is obtained by MOCVD epitaxial growth on a Si substrate 1;
（2）在P型半导体层4上制备透明导电层11，在透明导电层11上设有开孔的布拉格反射镜层12，在开孔的布拉格反射镜层上制备P型电极层5，P型电极层5通过开孔与透明导电层11相连；(2) a transparent conductive layer 11 is formed on the P-type semiconductor layer 4, a Bragg reflector layer 12 with an opening is provided on the transparent conductive layer 11, a P-type electrode layer 5 is formed on the Bragg reflector layer with an opening, and the P-type electrode layer 5 is connected to the transparent conductive layer 11 through the opening;
（3）利用电子束蒸发设备在P型电极层5蒸镀粘结层6；(3) using electron beam evaporation equipment to evaporate the bonding layer 6 on the P-type electrode layer 5;
（4）通过键合工艺，将基板7与粘结层6上键合；(4) Bonding the substrate 7 to the adhesive layer 6 through a bonding process;
（5）用湿法腐蚀工艺去除Si衬底1；(5) removing the Si substrate 1 by a wet etching process;
（6）刻蚀N型半导体层、有源层、 P型半导体层的侧边；(6) Etching the sides of the N-type semiconductor layer, active layer, and P-type semiconductor layer;
（7）使用气相沉积（PECVD）沉积介质滤波层8，所述介质滤波层8的结构如图10所示，其中SiO 2厚度是108 nm，SiN X厚度是78 nm，介质滤波层8的反射光谱如图11所示，介质滤波层8在580--630nm和640--705nm波长范围内的反射率大于90%，介质滤波层8在630--640nm具有高透射率； (7) The dielectric filter layer 8 is deposited by using PECVD. The structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 . The reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
（8）使用湿法腐蚀或干法刻蚀在介质滤波层8的上面开设用于放置 N型电极9的孔；(8) Using wet etching or dry etching, a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8;
（9）如图14所示，在介质滤波层8上面开设的孔内制备N型电极9。(9) As shown in FIG. 14 , an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8 .
实施例Example
一窄发光峰LED芯片，如图8所示，包括N型半导体层2、有源层3、P型半导体层4、P型电极层5、粘结层6、基板7、介质滤波层8、N型电极9、反射镜10。A narrow luminous peak LED chip, as shown in FIG8 , includes an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , a P-type electrode layer 5 , an adhesive layer 6 , a substrate 7 , a dielectric filter layer 8 , an N-type electrode 9 , and a reflector 10 .
实施例4中，一窄发光峰LED芯片的制备方法，包括以下步骤：In Example 4, a method for preparing a narrow luminous peak LED chip comprises the following steps:
（1）如图1所示，在Si衬底1上通过MOCVD外延生长得,LED外延结构；(1) As shown in FIG. 1 , an LED epitaxial structure is obtained by MOCVD epitaxial growth on a Si substrate 1;
（2）如图2所示，利用电子束蒸发设备在P型半导体层4上蒸镀P型电极层5；(2) As shown in FIG. 2 , a P-type electrode layer 5 is deposited on the P-type semiconductor layer 4 using an electron beam evaporation device;
（3）如图3所示，利用电子束蒸发设备在P型电极层5上蒸镀粘结层6；(3) As shown in FIG. 3 , an adhesive layer 6 is evaporated on the P-type electrode layer 5 using an electron beam evaporation device;
（4）如图4所示，通过键合工艺，将基板7与粘结层6上键合；(4) As shown in FIG. 4 , the substrate 7 is bonded to the adhesive layer 6 through a bonding process;
（5）如图5所示，用湿法腐蚀工艺去除Si衬底1；(5) As shown in FIG. 5 , the Si substrate 1 is removed by a wet etching process;
（6）如图6所示，刻蚀N型半导体层、有源层、 P型半导体层的侧边；(6) As shown in FIG6 , etching the sides of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer;
（7）如图7所示，使用气相沉积（PECVD）沉积介质滤波层8，所述介质滤波层8的结构如图10所示，其中SiO 2 厚度是108 nm，SiN X厚度是78 nm，介质滤波层8的反射光谱如图11所示，介质滤波层8在580--630nm和640--705nm波长范围内的反射率大于90%，介质滤波层8在630--640nm具有高透射率； (7) As shown in FIG. 7 , a dielectric filter layer 8 is deposited by PECVD. The structure of the dielectric filter layer 8 is shown in FIG. 10 , wherein the thickness of SiO 2 is 108 nm, the thickness of SiN X is 78 nm, and the reflection spectrum of the dielectric filter layer 8 is shown in FIG. 11 . The reflectivity of the dielectric filter layer 8 in the wavelength range of 580--630 nm and 640--705 nm is greater than 90%, and the dielectric filter layer 8 has a high transmittance in the wavelength range of 630--640 nm.
（8）如图8所示，使用湿法腐蚀或干法刻蚀在介质滤波层8的上面开设用于放置 N型电极9的孔；(8) As shown in FIG8 , a hole for placing the N-type electrode 9 is opened on the dielectric filter layer 8 by wet etching or dry etching;
（9）如图9所示，在介质滤波层8上面开设的孔内制备N型电极9；(9) As shown in FIG. 9 , an N-type electrode 9 is prepared in the hole opened on the dielectric filter layer 8;
（10）如图15所示，利用电子束蒸发设备在介质滤波层的侧壁和顶上边缘向内的区域制备反射镜10。(10) As shown in FIG. 15 , a reflector 10 is prepared on the sidewalls and the inner area of the top edge of the dielectric filter layer using an electron beam evaporation device.
工业实用性Industrial Applicability
上面举的实施方案里面，只是一些典型的实施方案，其中关于器件的尺寸、关于各种层的厚度、调节的带宽、反射镜的种类，他们之间是可以任意组合的。在这个基础上，略微调整某些层的成分，但是不会显著改变这些层的物理化学性质，而也有可能获得同样的效果，那么这些实施方案也是本专利保护范围之内。The above-mentioned embodiments are only some typical embodiments, in which the size of the device, the thickness of various layers, the bandwidth of the adjustment, and the type of the reflector can be arbitrarily combined. On this basis, the composition of some layers can be slightly adjusted, but the physical and chemical properties of these layers will not be significantly changed, and it is possible to obtain the same effect. These embodiments are also within the scope of protection of this patent.

Claims (10)

  1. 一种窄发光峰LED芯片，包括P型电极层、P型半导体层、有源层、N型半导体层、N型电极；其特征在于：在LED芯片的N型半导体层的上面和N型半导体层、有源层、 P型半导体层的外侧壁上均设有介质滤波层，所述有源层的发光波长为λ 0，介质滤波层在λ 0±Δλ的波长范围具有高透射性，Δλ≤10nm ，2Δλ为介质滤波层高透射范围宽度；在（λ 0-Δλ）-λ 1> 20 nm和λ 2-（λ 0+Δλ）> 20 nm波长范围内具有高反射率，λ 1和λ 2分别是介质滤波层高反射率两边的边界波长。 A narrow luminous peak LED chip comprises a P-type electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, and an N-type electrode; characterized in that: a dielectric filter layer is provided on the upper surface of the N-type semiconductor layer of the LED chip and on the outer side walls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer, the luminous wavelength of the active layer is λ 0 , the dielectric filter layer has high transmittance in the wavelength range of λ 0 ±Δλ, Δλ≤10nm, 2Δλ is the width of the high transmittance range of the dielectric filter layer; it has high reflectivity in the wavelength ranges of (λ 0 -Δλ)-λ 1 > 20 nm and λ 2 -(λ 0 +Δλ) > 20 nm, λ 1 and λ 2 are the boundary wavelengths on both sides of the high reflectivity of the dielectric filter layer, respectively.
  2. 根据权利要求1所述的窄发光峰LED芯片，其特征在于：所述有源层是由Al xGa yIn (1-x-y)N半导体材料制备。 The narrow luminous peak LED chip according to claim 1 is characterized in that the active layer is made of AlxGayIn (1-xy) N semiconductor material.
  3. 根据权利要求1所述的窄发光峰LED芯片，其特征在于：所述有源层的发光波长λ 0 >600 nm。 The narrow luminous peak LED chip according to claim 1, characterized in that the luminous wavelength λ 0 of the active layer is >600 nm.
  4. 根据权利要求1所述的窄发光峰LED芯片，其特征在于：所述LED芯片结构为垂直结构。The narrow luminous peak LED chip according to claim 1 is characterized in that the LED chip structure is a vertical structure.
  5. 根据权利要求1-4任意一项所述的窄发光峰LED芯片，其特征在于：所述介质滤波层是两种折射率不同的介质材料交替设置，介质滤波层结构为H（LH） k（HL） kH或（HL） k（LH） k； L为低折射率材料SiO 2, H为高折射率材料SiN x或TiO 2；介质滤波层中的每层介质材料的厚度为d=λ 0/（4n），n为该层介质材料的折射率；k＝4--20，k为介质滤波层的周期数。 The narrow luminous peak LED chip according to any one of claims 1-4 is characterized in that: the dielectric filter layer is two dielectric materials with different refractive indices arranged alternately, and the dielectric filter layer structure is H (LH) k (HL) k H or (HL) k (LH) k ; L is a low refractive index material SiO2 , and H is a high refractive index material SiNx or TiO2 ; the thickness of each layer of dielectric material in the dielectric filter layer is d=λ 0 /(4n), n is the refractive index of the dielectric material layer; k=4--20, k is the number of periods of the dielectric filter layer.
  6. 根据权利要求5所述的窄发光峰LED芯片，其特征在于：所述LED芯片的尺寸小于50μm，且在LED芯片的侧壁设有反射镜。The narrow luminous peak LED chip according to claim 5 is characterized in that the size of the LED chip is less than 50 μm, and a reflector is provided on the side wall of the LED chip.
  7. 根据权利要求6所述的窄发光峰LED芯片，其特征在于：在P型半导体层上设有透明导电层，在透明导电层上设有开孔的布拉格反射镜层，在开孔的布拉格反射镜层上设有P型电极层，P型电极层通过开孔与透明导相连。The narrow luminous peak LED chip according to claim 6 is characterized in that: a transparent conductive layer is provided on the P-type semiconductor layer, a Bragg reflector layer with an opening is provided on the transparent conductive layer, a P-type electrode layer is provided on the Bragg reflector layer with an opening, and the P-type electrode layer is connected to the transparent conductive layer through the opening.
  8. 一种窄发光峰LED芯片的制备方法，其特征在于：包括以下步骤：A method for preparing a narrow luminous peak LED chip, characterized in that it comprises the following steps:
    （1）在衬底上依次生长N型半导体层、有源层以及P型半导体层，有源层的发光波长为λ 0； (1) An N-type semiconductor layer, an active layer, and a P-type semiconductor layer are sequentially grown on a substrate, and the light emission wavelength of the active layer is λ 0 ;
    （2）在P型半导体层上生长P型电极层；(2) growing a P-type electrode layer on the P-type semiconductor layer;
    （3）在生长P型电极层上生长粘结层；(3) growing a bonding layer on the P-type electrode layer;
    （4）将基板与粘结层键合；(4) bonding the substrate to the adhesive layer;
    （5）去除步骤（4）中所得结构的衬底；(5) removing the substrate of the structure obtained in step (4);
    （6）步骤(5)所得结构的N型半导体层、有源层、 P型半导体层的侧边刻蚀；(6) Side etching of the N-type semiconductor layer, active layer, and P-type semiconductor layer of the structure obtained in step (5);
    （7）在步骤（6）所得结构的N型半导体层的上面和N型半导体层、有源层、 P型半导体层的外侧壁上制备介质滤波层，介质滤波层在λ 0 ±Δλ（Δλ≤10nm）的波长范围具有高透射性（2Δλ即介质滤波层高透射范围宽度），在（λ 0-Δλ）-λ 1> 20 nm和λ 2-（λ 0+Δλ）> 20 nm波长范围内具有高反射率，λ 1和λ 2是介质滤波层高反率的边界波长； (7) preparing a dielectric filter layer on the upper surface of the N-type semiconductor layer of the structure obtained in step (6) and on the outer side walls of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer, wherein the dielectric filter layer has high transmittance in the wavelength range of λ 0 ± Δλ (Δλ ≤ 10 nm) (2Δλ is the width of the high transmittance range of the dielectric filter layer) and high reflectivity in the wavelength ranges of (λ 0 - Δλ) - λ 1 > 20 nm and λ 2 - (λ 0 + Δλ) > 20 nm, wherein λ 1 and λ 2 are boundary wavelengths of high reflectivity of the dielectric filter layer;
    （8）在步骤（7）所得结构的介质滤波层的上面开孔;(8) in step (7) the dielectric filter layer of the structure obtained above the opening;
    （9）在步骤（8）所得结构的孔内制备与N-GaN层接触的N型电极。(9) An N-type electrode is prepared in the hole of the structure obtained in step (8) so as to contact the N-GaN layer.
  9. 根据权利要求8所述的窄发光峰LED芯片的制备方法，其特征在于：所述步骤（2）中，在P型半导体层上制备透明导电层，在透明导电层上制备开孔的布拉格反射镜层，在开孔的布拉格反射镜层制备P型电极层，P型电极层通过开孔与透明导电层相连。The method for preparing a narrow luminous peak LED chip according to claim 8 is characterized in that: in the step (2), a transparent conductive layer is prepared on the P-type semiconductor layer, a Bragg reflector layer with an opening is prepared on the transparent conductive layer, a P-type electrode layer is prepared on the Bragg reflector layer with an opening, and the P-type electrode layer is connected to the transparent conductive layer through the opening.
  10. 根据权利要求8所述的窄发光峰LED芯片的制备方法，其特征在于：在步骤（9）所得结构的介质滤波层的侧壁和顶上边缘向内的区域制备反射镜。The method for preparing a narrow luminous peak LED chip according to claim 8 is characterized in that a reflector is prepared on the side walls and the inner area of the top edge of the dielectric filter layer of the structure obtained in step (9).
PCT/CN2023/089197 2022-12-05 2023-04-19 Led chip having narrow light emission peak, and manufacturing method therefor WO2024119693A1 (en)

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JPH0856014A (en) * 1994-08-11 1996-02-27 Rohm Co Ltd Semiconductor light emitting device with filter
WO2017175148A1 (en) * 2016-04-08 2017-10-12 Novagan Highly directional light source with high extraction efficiency and method to manufacturing the same
US20210005797A1 (en) * 2019-07-03 2021-01-07 Samsung Electronics Co., Ltd. Light emitting diode device and manufacturing method thereof
US20210098656A1 (en) * 2019-09-30 2021-04-01 Nichia Corporation Light emitting device
CN113257973A (en) * 2020-12-07 2021-08-13 南昌大学 Deep ultraviolet LED with P-surface reflecting electrode structure and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856014A (en) * 1994-08-11 1996-02-27 Rohm Co Ltd Semiconductor light emitting device with filter
WO2017175148A1 (en) * 2016-04-08 2017-10-12 Novagan Highly directional light source with high extraction efficiency and method to manufacturing the same
US20210005797A1 (en) * 2019-07-03 2021-01-07 Samsung Electronics Co., Ltd. Light emitting diode device and manufacturing method thereof
US20210098656A1 (en) * 2019-09-30 2021-04-01 Nichia Corporation Light emitting device
CN113257973A (en) * 2020-12-07 2021-08-13 南昌大学 Deep ultraviolet LED with P-surface reflecting electrode structure and preparation method thereof

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