CN216213515U - LED light-emitting device based on flip-chip structure - Google Patents
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Abstract
The utility model discloses an LED light-emitting device based on a flip structure, which is characterized by comprising a distributed Bragg reflector DBR, an Indium Tin Oxide (ITO) buffer layer, a P-pole grating layer, a multi-quantum well MQW layer, an N-pole grating layer and a Sapphire substrate Sapphire layer which are sequentially overlapped from bottom to topA group of SiO with cone shape distributed in uniform array shape is arranged on the upper surface of the Sapphire substrate Sapphire layer facing outwards2And the cone is provided with an N electrode N-nad and a P electrode P-nad at the same positions of the outer edges of the N-pole grating layer and the P-pole grating layer respectively. The device can avoid the metal shielding effect, optical parameters are easier to match, the LED luminous efficiency can be improved, and the heat radiation performance is good.
Description
Technical Field
The utility model relates to the technical field of optical communication, in particular to an LED light-emitting device based on an inverted structure, which solves the problems of light-emitting efficiency and heat dissipation by utilizing the inverted LED structure.
Background
A Light Emitting Diode (LED) is a semiconductor solid-state light emitting device that rises rapidly in recent years, and has the advantages of small volume, good vibration resistance, compact structure, less heat generation, high brightness, fast light emitting response speed, long service life, low operating voltage, and the like, compared with a conventional incandescent lamp, fluorescent lamp, and the like. However, during the use process, the LED still has some problems affecting the application, and the most important of them is the low light extraction efficiency. The main reason for the low light extraction efficiency of LEDs is that the refractive index difference between the GaN material in the LED and the surrounding air is too large, and when light is incident from the optically dense medium material GaN into the air, the light is totally reflected, and in order to increase the critical angle of total reflection between the GaN layer and the air, many researchers have proposed different methods, such as: the LED light source comprises a surface roughening technology, a sub-wavelength grating technology, an LED flip-chip technology, a bionic technology for manufacturing a moth-eye-shaped structure, a photonic crystal technology and the like, wherein the inverted pyramid type LED can solve the problem of total emission caused by the difference of refractive indexes of a substrate and air, and the light emitting efficiency is improved by 1.22 times. The flip LED structure can solve the problem that the light emitting efficiency of the chip is low, and can solve the problem of poor heat dissipation performance simultaneously. Compared with a front-mounted structure, the light emitting characteristic of the LED is improved by back light emission without metal shielding, and the heat radiation of the LED is improved by directly radiating metal electrodes instead of a sapphire substrate.
The GaN-based LED produced in mass production in the market at present is mainly of a forward mounting and vertical structure, and the LED flip-chip technology is to change a sapphire substrate into a light-emitting surface, so that the absorption of an electrode layer on a P-GaN layer to photons is avoided. The flip LED structure improves the light emitting characteristic of the flip LED structure by emitting light from the back side without metal shielding, and compared with the mass production forward mounting structure on the market at present, the flip LED structure can solve the problem of low light emitting efficiency of a chip and can solve the problem of poor heat dissipation; the direct metal electrode dissipates heat instead of the sapphire substrate, thereby improving heat dissipation and reliability thereof.
For the traditional forward mounting structure, in order to improve the current uniformity of a P-GaN layer, a metal electrode is evaporated on the P-GaN layer to improve current expansion, and the metal electrode is made of opaque materials, so that a metal shielding effect can be caused, and the light emitting efficiency of a chip is too low. The transverse current spreading effect in the LED with the forward mounting structure is easy to cause the current crowding phenomenon; although the vertical structure can solve the problem that the metal electrodes are on the same side, the preparation process is complex and the product yield is low.
Disclosure of Invention
The utility model aims to overcome the defects in the prior art and provide an LED light-emitting device based on a flip-chip structure. The device can avoid the metal shielding effect, optical parameters are easier to match, the LED luminous efficiency can be improved, and the heat radiation performance is good.
The technical scheme for realizing the purpose of the utility model is as follows:
an LED light-emitting device based on a flip structure comprises a Distributed Bragg reflector DBR (Distributed Bragg Reflector, DBR for short), an Indium Tin Oxide (ITO) buffer layer, a P-pole grating layer, a multi-quantum well (MQW) layer, an N-pole grating layer and a Sapphire substrate Sapphire layer which are sequentially overlapped from bottom to top, wherein a group of SiO which is uniformly Distributed in an array shape and is in a conical shape is arranged on the upper surface of the Sapphire substrate Sapphire layer facing outwards2And the cone is provided with an N electrode N-nad and a P electrode P-nad at the same positions of the outer edges of the N-pole grating layer and the P-pole grating layer respectively.
The SiO in the shape of a cone is uniformly distributed in an array2The cones are in a 6X 6 array, wherein SiO2The spherical surface diameter of the cone is 60nm and SiO2Cone through ordered SiO2The nanospheres are used in conjunction with ICP etching to texture the sapphire surface, in which method the SiO is rotated2The nanospheres were used as sacrificial dry etch masks to prepare sapphire substrates with conical surfaces: first, a 50nm thick polystyrene PS (Polystyrene) layer was used to cover the sapphire surface to fix SiO2Nanospheres, which are then irradiated to hydrophilize the surface by exposure to ultraviolet light, by hydrolysis of tetraethylorthosilicate TEOS (tetraethylorthosilicate) in an alcoholic medium in the presence of water and ammonia, according to the method
Method for synthesizing monodisperse SiO2Nanoparticles prepared by setting the concentrations of ammonia, TEOS and water to 0.1, 17.0 and 0.2mol/L, respectively, and SiO2The size of the particles was controlled to 60nm, and the obtained SiO was measured by SEM (scanning Electron microscope)2Particles of SiO 60nm in diameter2Spinning and casting the nanospheres on the surface of the sapphire, then annealing for 10 minutes at 160 ℃, and adding SiO2Nanosphere embedded SiO2Layer, put the sample under pressure 0.667Pa and Cl2(7.5sccm) and BCl3(30sccm) of the mixture, at an etch rate of 100nm/min, essentially of spherical SiO2And as a mask, different etching depths are generated in the sapphire by sacrificing the thickness thereof through ICP etching, thereby preparing a taper type structure, thereby forming a taper type sapphire substrate.
The Sapphire substrate Sapphire layer has a thickness of 100-600 nm.
Preferably, the Sapphire substrate Sapphire layer has a thickness of 130nm, the thickness of the Sapphire substrate layer has an influence on the light extraction efficiency of the surface grating flip-chip LED, the influence on the light extraction efficiency of the surface grating flip-chip LED by the thickness of the Sapphire substrate is similar to the influence on the light extraction efficiency of the surface grating by the thickness of the N-GaN layer, all of which are caused by the influence on the standing wave of the F-P cavity, the coupling strength of the grating and the guided mode of the LED, and when the thickness of the Sapphire substrate is 130nm, more guided modes are guided into the light extraction angle of the LED due to the strong coupling effect of the grating and the guided modes in the LED, so that more energy is extracted.
The N-pole grating layer is an N-GaN layer, the thickness of the N-GaN layer is 100nm, when the thickness of the Sapphire substrate Sapphire layer is uniformly changed between 100-600nm at intervals of 10nm, the light extraction efficiency of the surface grating flip LED is periodically oscillated, but the oscillation peak is reduced along with the increase of the thickness, the light extraction efficiency is reduced from 30.98% when the thickness is equal to 100nm to 25.86% when the thickness is equal to 600nm, and the coupling intensity of the grating and the LED internal guide mode is maximum only when the thickness of the N-GaN layer is 100 nm.
The P-electrode grating layer is a P-GaN layer, and the thickness of the P-GaN layer is 100-300 nm.
Preferably, the thickness of the P-GaN layer is 220nm, when the thickness of the P-GaN layer is 100-300nm and the interval is 10nm, the light extraction efficiency of the flip LED and the surface grating flip LED is changed periodically, and when the thickness of the P-GaN layer is 220nm, the light extraction efficiency of the flip LED and the surface grating LED is maximum.
The N-pole grating layer and the P-pole grating layer both adopt metal grating structures, so that the internal quantum efficiency of the LED can be effectively improved, the external quantum efficiency can be enhanced, gallium nitride (GaN) is an inorganic substance, is a compound of nitrogen and gallium, is a direct bandgap semiconductor, can be used in a high-power and high-speed photoelectric element, and an LED model adopts GaN gratings.
The N-nad of the N electrode is made into an N-type electrode by vapor plating metal, and the material is arsenic or antimony or phosphorus.
The P-nad electrode is made of vapor plating metal and is made into a P-type electrode, and the P-type electrode is made of boron, indium or gallium and serves as an injection current end of the LED.
The DBR is a special all-dielectric reflective film, generally composed of two alternately stacked high-low refractive index compounds to generate periodic modulation of refractive index in one dimension of space, generate strong interference phenomenon, and realize selective light reflection in a certain wavelength range, and the oxide film with high refractive index is ZnO, TiO2、Ta2O5、Nb2O5、ZrO2、SiO2、HfO2MgO, etc., SiO2Is the lowest refractive index material with the best film property, and SiO2Is not easy to decompose, so that the film with low refractive index required by plating is optimal, wherein TiO2Has high refractive index n about 2.5 and high mechanical strength, but is transparent in all bands, and is similar to SiO2The DBR is a relatively good high-low refractive index material by combining the advantages of reducing the light absorption and scattering property, and is manufactured by adopting an evaporation method: the first layer is SiO2The last layer is also SiO2With TiO in the middle2And SiO2Cross-over so as to form a substrate SiO2-TiO2And SiO2-SiO2The wave width of the reflection area of the structure is increased along with the ratio of the high refractive index material to the low refractive index material, and in addition, the reflectivity is increased along with the ratio of the TiO2And SiO2The number of cycles is increased, but after the number of the film layers is increased to a certain degree, the ripple oscillation at two sides of the high reflection region is more serious, the half width of the high reflection region is not increased, the reflectivity is not increased, in order to obtain high reflectivity and high bandwidth, and also consider the voltage and the heat dissipation of the chip, the technical scheme selects 18 cycles of SiO for chip preparation2And TiO2The alternately grown DBRs are mirrors.
Indium Tin Oxide (ITO) layer is a P-type semiconductor material with good conductivity and high light transmission, the transmittance of the ITO layer in a visible light wave band can reach more than 90%, the ITO electrode is used for replacing a P-type electrode chip in a traditional LED, the light-emitting rate of a luminous body can be improved by 30% -40%, an ITO buffer layer is added between gratings, and the luminous intensity of the LED is further improved.
The quantum well in the multi-quantum well MQWS layer is of a sandwich structure, the middle part is a thin semiconductor film, the structure of the semiconductor film is composed of AlGaAs-GaAs-AlGaAs composite forms, two isolation layers, namely two N-type GaAs layers, are arranged on the outer sides of the semiconductor film, photons generated by LED quantum well QW spontaneous radiation penetrate through the GaN layer, and the light extraction rate of the GaN grating is improved by generating effective coupling of SPPs-QW.
The device can avoid the metal shielding effect, optical parameters are easier to match, the LED luminous efficiency can be improved, and the heat radiation performance is good.
Drawings
Fig. 1 is a schematic mechanism diagram of the embodiment.
In the figure, 1, a cone 2, a sapphire substrate layer 3, an N-pole grating layer 4, an N electrode N-nad 5, a multi-quantum well layer 6, a P electrode P-nad 7, a P-pole grating layer 8, an indium tin oxide buffer layer 9 and a Distributed Bragg Reflector (DBR) are arranged.
Detailed Description
The utility model will be further illustrated by the following figures and examples, but is not limited thereto.
Example (b):
referring to fig. 1, the LED light emitting device based on the flip-chip structure comprises a distributed bragg reflector DBR9, an indium tin oxide ITO buffer layer 8, a P-pole grating layer 7, a multi-quantum well MQW layer 5, an N-pole grating layer 3 and a Sapphire substrate Sapphire layer 2 which are sequentially stacked from bottom to top, wherein a group of uniformly arrayed and distributed conical SiO is arranged on the outward upper surface of the Sapphire substrate Sapphire layer 22And the cone is provided with an N electrode N-nad4 and a P electrode P-nad6 at the same positions of the outer edges of the N-pole grating layer 3 and the P-pole grating layer 7 respectively.
In this example, the SiO is uniformly distributed in a conical array2The cones are in a 6X 6 array, wherein SiO2The spherical surface diameter of the cone is 60nm and SiO2Cone through ordered SiO2The nanospheres are used in conjunction with ICP etching to texture the sapphire surface, in which method the SiO is rotated2The nanospheres were used as sacrificial dry etch masks to prepare sapphire substrates with conical surfaces: first, a 50nm thick polystyrene PS (Polystyrene) layer was used to cover the sapphire surface to fix SiO2Nanospheres, which are then irradiated to hydrophilize the surface by exposure to ultraviolet light, by hydrolysis of tetraethylorthosilicate TEOS (tetraethylorthosilicate) in an alcoholic medium in the presence of water and ammonia, according to the method
Method for synthesizing monodisperse SiO2Nanoparticles prepared by setting the concentrations of ammonia, TEOS and water to 0.1, 17.0 and 0.2mol/L, respectively, and SiO2The size of the particles was controlled to 60nm, and the obtained SiO was measured by SEM (scanning Electron microscope)2Particles of SiO 60nm in diameter2Spinning and casting the nanospheres on the surface of the sapphire, then annealing for 10 minutes at 160 ℃, and adding SiO2Nanosphere embedded SiO2Layer, put the sample under pressure 0.667Pa and Cl2(7.5sccm) and BCl3(30sccm) of the mixture, at an etch rate of 100nm/min, essentially of spherical SiO2Sacrificing its thickness in sapphire by ICP etching as a maskDifferent etching depths are generated, so that a cone-type structure is prepared, and a cone-type sapphire substrate is formed.
The Sapphire substrate Sapphire layer 2 has a thickness of 100-600 nm.
In this example, the Sapphire substrate Sapphire layer 2 has a thickness of 130nm, the thickness of the Sapphire substrate layer 2 has an influence on the light extraction efficiency of the surface grating flip-chip LED, the influence of the thickness of the Sapphire substrate on the light extraction efficiency of the surface grating flip-chip LED is similar to the influence of the thickness of the N-GaN layer on the light extraction efficiency of the surface grating, because the thickness of the Sapphire substrate has an influence on the standing wave of an F-P cavity and the coupling strength of the grating and a guided mode, when the thickness of the Sapphire substrate is 130nm, because the coupling effect of the grating and the guided mode in the LED is strong, more guided modes are guided into the light extraction angle of the LED, and more energy is extracted.
In this example, the N-pole grating layer 3 is an N-GaN layer, the thickness of the N-GaN layer is 100nm, when the thickness of the Sapphire substrate Sapphire layer 2 is uniformly changed between 100-600nm at intervals of 10nm, the light extraction efficiency of the surface grating flip-chip LED generates periodic oscillation, but the oscillation peak is reduced along with the increase of the thickness, the light extraction efficiency is reduced from 30.98% when the thickness is equal to 100nm to 25.86% when the thickness is equal to 600nm, and the coupling strength of the grating and the internal guide mode of the LED is maximum when only the thickness of the N-GaN layer 3 is 100 nm.
The P-pole grating layer 7 is a P-GaN layer, and the thickness of the P-GaN layer is 100-300 nm.
In the embodiment, the thickness of the P-GaN layer is 220nm, when the thickness of the P-GaN layer 7 is 100-300nm and is uniformly changed at intervals of 10nm, the light extraction efficiency of the flip LED and the surface grating flip LED is periodically changed, and when the thickness of the P-GaN layer 7 is 220nm, the light extraction efficiency of the flip LED and the surface grating LED is maximum.
The N-pole grating layer and the P-pole grating layer both adopt metal grating structures, so that the internal quantum efficiency of the LED can be effectively improved, the external quantum efficiency can be enhanced, gallium nitride (GaN) is an inorganic substance, is a compound of nitrogen and gallium, is a direct bandgap semiconductor, can be used in a high-power and high-speed photoelectric element, and an LED model adopts GaN gratings.
The N-nad4 electrode is made of evaporated metal and is made of arsenic, antimony or phosphorus.
The P-nad6 electrode is made of vapor plating metal and is made into a P-type electrode made of boron, indium or gallium and used as the injection current end of the LED.
The DBR is a special all-dielectric reflective film, generally composed of two alternately stacked high-low refractive index compounds to generate periodic modulation of refractive index in one dimension of space, generate strong interference phenomenon, and realize selective light reflection in a certain wavelength range, and the oxide film with high refractive index is ZnO, TiO2、Ta2O5、Nb2O5、ZrO2、SiO2、HfO2MgO, etc., SiO2Is the lowest refractive index material with the best film property, has small absorption and scattering, and is SiO2Is not easy to decompose, so that the film with low refractive index required by plating is optimal, wherein TiO2Has high refractive index n about 2.5 and high mechanical strength, but is transparent in all bands, and is similar to SiO2The DBR is a relatively good high-low refractive index material by combining the advantages of reducing the light absorption and scattering property, and is manufactured by adopting an evaporation method: the first layer is SiO2The last layer is also SiO2TiO with multiple pairs in the middle2And SiO2Cross-over so as to form a substrate SiO2Multiple pairs of TiO2And SiO2-SiO2The wave width of the reflection area of the structure is increased along with the ratio of the high refractive index material to the low refractive index material, and in addition, the reflectivity is increased along with the ratio of the TiO2And SiO2The number of cycles is increased, but after the film layer is increased to a certain degree, the ripple oscillation at two sides of the high reflection region is more serious, the half width of the high reflection region is not increased, the reflectivity is not increased, in order to obtain high reflectivity, high bandwidth and give consideration to chip voltage and heat dissipation, the chip preparation of the embodiment selects SiO with 18 cycles2And TiO2The alternately grown DBRs are mirrors.
Indium Tin Oxide (ITO) layer 8 (ITO for short) is a P-type semiconductor material with good conductivity and high light transmission, the transmittance of the ITO layer in a visible light wave band can reach more than 90%, the ITO electrode is used for replacing a P-type electrode chip in a traditional LED, the light-emitting rate of a luminous body can be improved by 30% -40%, an ITO buffer layer is added between gratings, and the luminous intensity of the LED is further improved.
The quantum well in the multi-quantum well MQWS layer 5 is of a sandwich structure, a thin semiconductor film is arranged in the middle, the structure of the semiconductor film is formed by the composite form of AlGaAs-GaAs-AlGaAs, and two isolation layers, namely two pieces of N-type GaAs, are arranged on the outer side. Photons generated by LED quantum well QW spontaneous radiation penetrate through the GaN layer, and the light extraction rate on the surface of the GaN grating is improved by generating effective coupling of SPPs-QW.
Claims (9)
1. The LED light-emitting device based on the flip structure is characterized by comprising a distributed Bragg reflector DBR, an Indium Tin Oxide (ITO) buffer layer, a P-pole grating layer, a multi-quantum well (MQW) layer, an N-pole grating layer and a Sapphire substrate Sapphire layer which are sequentially overlapped from bottom to top, wherein a group of SiO which is uniformly distributed in an array shape and is conical is arranged on the outer upper surface of the Sapphire substrate Sapphire layer2And the cone is provided with an N electrode N-nad and a P electrode P-nad at the same positions of the outer edges of the N-pole grating layer and the P-pole grating layer respectively.
2. The LED lighting device based on the flip-chip structure as claimed in claim 1, wherein the SiO in the form of cone distributed in a uniform array2The cones are in a 6X 6 array, wherein SiO2The spherical diameter of the cone is 60 nm.
3. The flip-chip based LED lighting device as claimed in claim 1, wherein the Sapphire substrate Sapphire layer has a thickness of 100-600 nm.
4. The flip-chip structure-based LED light emitting device according to claim 3, wherein the Sapphire substrate Sapphire layer has a thickness of 130 nm.
5. The LED light emitting device based on the flip-chip structure as claimed in claim 1, wherein the N-pole grating layer is an N-GaN layer, and the thickness of the N-GaN layer is 100 nm.
6. The LED light emitting device based on the flip-chip structure as claimed in claim 1, wherein the P-gate layer is a P-GaN layer with a thickness of 100-300 nm.
7. The LED light emitting device based on the flip-chip structure according to claim 5, wherein the thickness of the P-GaN layer is 220 nm.
8. The LED light-emitting device based on the flip-chip structure as claimed in claim 1, wherein the N-nad is made of evaporated metal to form an N-type electrode, and the material is arsenic, antimony or phosphorus.
9. The LED light-emitting device based on the flip-chip structure as claimed in claim 1, wherein the P-nad is made of vapor deposited metal as a P-type electrode, and the material is boron, indium or gallium, which is used as an injection current terminal of the LED.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122387050.8U CN216213515U (en) | 2021-09-30 | 2021-09-30 | LED light-emitting device based on flip-chip structure |
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