WO2024112091A1 - Dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons - Google Patents

Dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons Download PDF

Info

Publication number
WO2024112091A1
WO2024112091A1 PCT/KR2023/018853 KR2023018853W WO2024112091A1 WO 2024112091 A1 WO2024112091 A1 WO 2024112091A1 KR 2023018853 W KR2023018853 W KR 2023018853W WO 2024112091 A1 WO2024112091 A1 WO 2024112091A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
anode electrode
light source
source device
electrode
Prior art date
Application number
PCT/KR2023/018853
Other languages
English (en)
Korean (ko)
Inventor
박규창
Original Assignee
주식회사 월드빔솔루션
경희대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 월드빔솔루션, 경희대학교 산학협력단 filed Critical 주식회사 월드빔솔루션
Publication of WO2024112091A1 publication Critical patent/WO2024112091A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

  • the present invention relates to an electron beam-based extreme ultraviolet light source device, and more specifically, to a device that outputs an extreme ultraviolet light source using an electron beam.
  • EUV Extreme ultraviolet
  • DUV deep ultraviolet
  • extreme ultraviolet lithography (lithography) equipment is used in nanometer-sized micropatterning processes for semiconductor manufacturing.
  • this extreme ultraviolet lithography equipment is based on a high-output laser, it is very expensive, has a complex internal structure, occupies a large volume, and generates a lot of debris due to the laser, which must be very high-output depending on its output characteristics. There are problems that arise that make maintenance difficult.
  • This light source device can output an extreme ultraviolet light source by irradiating an electron beam to an anode electrode made of a specific material.
  • the anode electrode is made of a metal material such as tin (Sn), and the anode electrode is easily melted and damaged when irradiated with the electron beam.
  • the conventional technology has a problem in that the durability of the device is inevitably weak as the pressure within the chamber increases as the anode electrode melts. Accordingly, there is a need for an electron beam-based extreme ultraviolet light source technology implemented with an anode electrode made of a new material.
  • the present invention includes an anode electrode made of silicon (Si) rather than tin (Sn), and an extreme ultraviolet light source is generated from the anode electrode made of silicon by irradiation of an electron beam.
  • the purpose is to provide a new electron beam-based extreme ultraviolet light source technology that can generate light.
  • Another object of the present invention is to provide an electron beam-based extreme ultraviolet light source technology that has a conversion efficiency, which is the efficiency occupied by the EUV band among light in various wavelength bands generated at an anode electrode, above a certain level.
  • Another object of the present invention is to provide an electron beam-based extreme ultraviolet light source technology optimized to prevent damage to the anode electrode due to electron beam irradiation.
  • Another purpose of the present invention is to provide an extreme ultraviolet light source technology that is advantageous for maintenance by reducing debris by using a low-power electron beam compared to a laser.
  • a light source device that outputs an extreme ultraviolet light source based on an electron beam, and includes a chamber; Each of the chamber includes a cathode electrode, a plurality of emitters including a carbon-based material and spaced apart from the cathode electrode, and a gate electrode disposed above the plurality of emitters and spaced apart from the plurality of emitters.
  • An electron beam emitting unit that generates an electron beam internally; and an anode electrode located inside the chamber but spaced apart from the electron beam emitting unit, and ionized when the electron beam is incident to generate plasma, thereby generating extreme ultraviolet rays from the plasma.
  • the anode electrode generates the plasma. It contains a silicon-based radiating material on its surface.
  • An L-shell transition of silicon may occur in the silicon material by the electron beam.
  • the conversion efficiency which is the ratio of the extreme ultraviolet ray band among the various wavelength bands of light generated at the anode electrode, may be 15 ⁇ W/mA or more.
  • the conversion efficiency may vary depending on the size of the anode voltage, which is the voltage applied to the anode electrode.
  • the voltage applied to the anode electrode may be 5kV to 20kV.
  • a pulse-type voltage is applied to the gate electrode, and the power density of the electron beam on the surface of the anode electrode may be less than 1 kW/mm 2 .
  • the anode electrode may be implemented to rotate.
  • the rotation axis of the anode electrode may have an acute angle with respect to the optical axis of the incident electron beam.
  • the light source device may further include a scanning unit that scans the electron beam so that the portion of the electron beam irradiated to the anode electrode rotates over time.
  • the spot size of the electron beam on the surface of the anode electrode may be 50 nm to several hundred ⁇ m.
  • the anode electrode may be implemented to reciprocate back and forth along an axis perpendicular to the rotation axis of the anode electrode while rotating, or to reciprocate up and down around the rotation axis.
  • the light source device may further include a scanning unit that scans the electron beam so that the portion of the electron beam irradiated to the anode electrode rotates and moves back and forth with time.
  • the spot size of the electron beam on the surface of the anode electrode may be tens of nm to hundreds of ⁇ m.
  • the present invention configured as described above includes an anode electrode made of silicon (Si) rather than tin (Sn), and an extreme ultraviolet light source can be generated from the anode electrode made of silicon by irradiation of an electron beam, and the anode electrode
  • the conversion efficiency which is the efficiency occupied by the EUV band among the light of various wavelength bands generated in there is.
  • the present invention has an advantage in maintenance by reducing the negative effects on the anode electrode by using a low-power electron beam compared to a laser, thereby reducing debris.
  • Figure 1 shows a configuration diagram of an extreme ultraviolet light source device 10 according to an embodiment of the present invention.
  • Figure 2 shows an example of the detailed configuration of the electron beam emitting unit 200.
  • Figure 3 shows an example in which voltage is applied to the electron beam emitting unit 200 and the anode electrode 300.
  • Figure 4 shows various characteristics of silicon (Si) material.
  • Figure 5 shows examples of various types of electron guns and their brightness.
  • Figure 6 shows data on the magnitude of conversion efficiency according to various anode voltages.
  • FIG. 7 shows values for the power density at silicon of an electron beam measured when a certain amount of DC is applied to the gate electrode 240.
  • FIG. 8 shows measured values of gate voltage and cathode current when various types of DC-pulses are applied to the gate electrode 240.
  • FIG. 9 shows values for the power density at silicon of the electron beam measured when a DC-pulse is applied to the gate electrode 240.
  • Figure 10 shows a conceptual diagram of the rotation and reciprocating motion of the anode electrode 300.
  • FIG. 11 shows values for the power density at silicon of the electron beam measured when the anode electrode 300 is implemented to rotate while a DC-pulse is applied to the gate electrode 240.
  • Figure 12 shows an example of performing a scanning operation on an electron beam while adjusting the spot size.
  • Exit 200 Electron beam emitting unit
  • cathode electrode 220 field emission substrate
  • focusing electrode 300 anode electrode
  • Figure 1 shows a configuration diagram of an extreme ultraviolet light source device 10 according to an embodiment of the present invention.
  • an extreme ultraviolet light source device 10 (hereinafter referred to as “this device”) according to an embodiment of the present invention includes a chamber 100 and an electron beam emitting unit located inside the chamber 100. It includes (200) and an anode electrode (300).
  • the device 100 may be used as a lithography device in a fine pattern process for semiconductor manufacturing, but is not limited thereto.
  • the chamber 100 maintains a vacuum inside and maintains plasma generated by excitation or ionization of the anode electrode 300 upon incident electron beam.
  • the area where plasma is maintained in the internal space of the chamber 100 is referred to as a “plasma area” for convenience.
  • the chamber 100 may include an outlet 110 through which a light source of extreme ultraviolet (EUV) generated in the plasma region is output.
  • EUV extreme ultraviolet
  • FIG. 2 shows an example of the detailed configuration of the electron beam emitter 200
  • FIG. 3 shows an example in which voltage is applied to the electron beam emitter 200 and the anode electrode 300.
  • the electron beam emitting unit 200 is configured to generate and emit an electron beam (e - ). At this time, the electron beam emitting unit 200 is not based on a laser but is based on a carbon-based emitter 230 that emits electrons by an electric field.
  • the electron beam emitter 200 is located inside the chamber 100 and radiates an electron beam toward the anode electrode 300 provided to be spaced apart from the electron beam emitter 200 within the chamber 100.
  • the electron beam emitting unit 200 includes a cathode electrode 210, a plurality of emitters 230 located on the cathode electrode 210, and a plurality of emitters 230 spaced apart from each other. may include a gate electrode 240 located above the plurality of emitters 230.
  • the cathode electrode 210 and the anode electrode 300 contain conductive materials and are commonly used cathodes and anodes.
  • the cathode electrode 210 is made of metals such as Al, Au, Ni, Ti, Cr, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and indium zinc tin oxide (IZTO). ), transparent conductive oxide (TCO), conductive polymer, or graphene, etc., but is not limited thereto.
  • the anode electrode is tin (Sn), lithium (Li), indium (In), antimony (Sb), tellurium (Te), Tb (terbium), It is composed of one or more metals among Gd (gadolinium) and aluminum (Al).
  • the anode electrode 300 is composed of a material of silicon (Si). In the case of this silicon (Si) material, it has the advantage of being cheaper and easier to process compared to metal materials such as tin (Sn) used in the prior art, and has conductivity and electrical properties that are not significantly inferior to those of the corresponding metal material. have
  • the device 10 is a device that generates extreme ultraviolet rays based on an electron beam, and includes an anode electrode 300 made of silicon (Si) rather than tin (Sn), and generates silicon (Si) by irradiation of the electron beam.
  • An extreme ultraviolet light source can be generated from the anode electrode 300 made of Si), and the conversion efficiency, which is the efficiency of the EUV band among the light of various wavelength bands generated from the anode electrode 300, is above a certain level,
  • An optimized electron beam-based extreme ultraviolet light source technology is provided to prevent damage to the anode electrode 300 due to electron beam irradiation. These optimization techniques will be described later.
  • the anode electrode 300 is not provided in the electron beam emitting unit 200, but is provided in a separate configuration to be spaced apart from the electron beam emitting unit 200 inside the chamber 100. Accordingly, the overall volume of the device 10 can be reduced even if it is provided with a plurality of electron beam emitting units 200.
  • a plurality of electron beam emitting units 200 can emit electron beams using a common anode electrode 300 separately provided in the chamber 100, so that the cathode electrode, emitter, and anode electrode emit electron beams.
  • the internal structure is simpler, the size is more compact, and manufacturing costs can be lowered.
  • the plurality of emitters 230 are configured to emit electrons supplied from the cathode 30 toward the anode 300.
  • the emitter 230 may be comprised of a sharp emitter tip or may be comprised of a flat emitter layer. At this time, the emitter tip may be formed in various shapes, such as a horn shape or a triangle, in addition to the needle shape. For example, the emitter 230 may be arranged at regular intervals in the horizontal and vertical directions on the cathode electrode 210, respectively.
  • Emitter 230 may include a carbon-based material.
  • carbon-based materials may include carbon nanotubes (CNTs), carbon nanowires, semiconductor nanowires, zinc oxide nanowires, carbon nanofibers, conductive nanorods, graphite, or nanographene. However, it is not limited to this.
  • the emitter 230 when the emitter 230 is implemented with carbon nanotubes, high-efficiency field emission characteristics unique to carbon nanotubes can be obtained.
  • the emitter 230 of these carbon nanotubes can be used by laser vaporization, arc discharge, thermal-CVD, plasma-CVD, and HF-CVD (hot filament). It may be formed by a method such as chemical vapor deposition, but is not limited to this.
  • the emitter 230 may be provided on the field emission substrate 220.
  • the field emission substrate 220 may be a typical wafer prepared to include an emitter in a field emission device. That is, the field emission substrate 220 is installed on the cathode electrode 210 to mount the emitter 230.
  • the gate electrode 240 is configured to control the flow of electrons emitted from the emitter 230 according to the input voltage.
  • the portion of the gate electrode 240 that faces the plurality of emitters 230 that is, the portion facing the plurality of emitters 230, includes a mesh structure 241 made of a conductive material (e.g., metal, etc.). can do.
  • the mesh structure 241 may be composed of thin metal lines woven in a net shape with a distance between them, or may be composed of a plurality of openings formed in a metal plate.
  • the gate electrode 240 may diffuse the electrons emitted from the emitter 230 while passing the electron beam through the space between the metal lines of the mesh structure 241 or through a plurality of openings.
  • the gate electrode 240 includes a conductive material.
  • the gate electrode 240 is made of metal such as Al, Au, Ni, Ti, Cr, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and indium zinc tin oxide (IZTO). ), transparent conductive oxide (TCO), conductive polymer, or graphene, etc., but is not limited thereto.
  • An insulating layer (or insulating spacer), not shown, may be located between the cathode electrode 210 and the gate electrode 240 around the plurality of emitters 230 . At this time, the thickness of the insulating layer is made larger than the height of each of the plurality of emitters 230 to prevent the gate electrode 240 from contacting the plurality of emitters 230.
  • the gate electrode 240 can maintain an insulated state from the cathode electrode 210 and the plurality of emitters 230 by this insulating layer.
  • a low voltage (eg, negative voltage) may be applied to the cathode electrode 210 or connected to ground, and a high voltage (eg, positive voltage) of 5 kV or more may be applied to the anode electrode 300.
  • a pulse voltage may be applied to the gate electrode 240. That is, an electric field is formed around the plurality of emitters 230 by the voltage difference between the cathode electrode 210 and the gate electrode 240, and electron beams are emitted from the plurality of emitters 230 by this electric field. The electron beam is accelerated by being attracted to the high voltage of the anode electrode 300.
  • the pulse voltage of the gate electrode 240 is a voltage with a high frequency or a low pulse width, and may have high frequency characteristics of 100 kHz or more, for example. This pulse voltage enables high-speed switching of the electron beam and leads to lower driving power.
  • the electron beam emitting unit 200 may be implemented without the focusing electrodes 251 and 252, or may be implemented to include at least one focusing electrode 251 and 252 spaced apart from the gate electrode 240.
  • a first focusing electrode 251 spaced apart from the gate electrode 240 may be additionally provided
  • a second focusing electrode 252 spaced apart from the first focusing electrode 251 may be additionally provided. It can be provided.
  • the opening of the first focusing electrode 251 may have a diameter smaller than the overall diameter of the mesh structure 241 of the gate electrode 240, and the opening of the second focusing electrode 252 may have a diameter smaller than the overall diameter of the mesh structure 241 of the gate electrode 240. It may be smaller than the diameter of the opening 271 of the electrode 251.
  • an additional focusing electrode (not shown) may be provided spaced apart from the second focusing electrode 252.
  • the opening of the focusing electrode has a diameter equal to the diameter of the opening of the second focusing electrode 252. It can be smaller than That is, small-sized openings may be provided in the order of the first focusing electrode 251 and the second focusing electrode 252 (i.e., in the upward direction).
  • a negative voltage may be applied to the first and second focusing electrodes 251 and 252. Accordingly, the electron beam that has passed through the mesh structure 241 of the gate electrode 240 sequentially passes through the opening of the first focusing electrode 251 and the opening of the second focusing electrode 252, and the first and second focusing electrodes ( 251, 252) can be focused by the repulsive force applied.
  • the electron beam emitting unit 200 can simplify its internal structure, have a compact size, and reduce manufacturing costs.
  • This advantage can be further doubled as the anode electrode 300 is separately provided inside the chamber 100, unlike the prior art. That is, the electron beam emitting unit 200 equipped with at least one of the first and second focusing electrodes 251 and 252 can focus the electron beam and reduce the size of the electron beam reaching the anode electrode 300, and as a result, the metal By reducing the generation of debris, the service life of the anode electrode 300 can be increased.
  • the electron beam emitting unit 200 may include a support (not shown) that is fixed to the edge of the mesh structure 241 corresponding to the plurality of emitters 230 and supports the mesh structure 241, and may include various An insulating layer (not shown) may additionally be included.
  • a first insulating layer (not shown) may be positioned between the cathode electrode 210 and a support (not shown) around the plurality of emitters 230 .
  • a second insulating layer may be positioned between the gate electrode 240 and the first focus electrode 251 to insulate the gate electrode 240 and the first focus electrode 251.
  • a third insulating layer (not shown) may be positioned between the first focusing electrode 251 and the second focusing electrode 252 to insulate the first focusing electrode 251 and the second focusing electrode 252.
  • a fourth insulating layer (not shown) may be positioned on the second focusing electrode 252 to insulate the upper portion of the second focusing electrode 252.
  • ⁇ Optimization technology as the anode electrode 300 is made of a material containing silicon (Si)>
  • anode electrode 300 is made of a material containing silicon (Si) will be described in more detail.
  • the electron beam emitted from the electron beam emitting unit 200 and accelerated toward the anode electrode 300 is incident (irradiated) on the anode electrode 300.
  • the incident area of the anode electrode 300 is ionized to generate plasma, and extreme ultraviolet rays (EUV) are generated in the corresponding plasma area surrounding the anode electrode 300. That is, the plasma generated from the anode electrode 300 by the electron beam functions as a light source that generates extreme ultraviolet rays (EUV).
  • the anode electrode 300 may include an emitting material that generates plasma when an electron beam is incident.
  • an emitting material that generates plasma when an electron beam is incident.
  • one or more metal emitting materials among tin (Sn), lithium (Li), indium (In), antimony (Sb), tellurium (Te), terbium (Tb), gadolinium (Gd), and aluminum (Al) It is included in the anode electrode 300.
  • this device 10 includes silicon (Si) as an emitting material. That is, silicon (Si), a radiating material, can be used in various shapes corresponding to the surface of the anode electrode 300.
  • Figure 4 shows various characteristics of silicon (Si) material. That is, Figure 4(a) shows the electron binding energy of silicon (Si) material, etc., and Figure 4(b) shows the photon energy (K-shell emission line) of silicon (Si) material, etc. , Figure 4(c) shows information related to the state of silicon (Si) material.
  • the electron beam emitting unit 200 which irradiates an electron beam to the anode electrode 300 made of silicon (Si) radiates an electron beam with a power of a certain level or higher enough to generate an extreme ultraviolet light source at the anode electrode 300.
  • the optimization technology according to the present invention may correspond to a technology that satisfies this first condition.
  • an L-shell transition of silicon occurs in the silicon (Si) material of the anode electrode 300, and accordingly, the extreme ultraviolet light source ) can be generated in the anode electrode 300 made of material.
  • Figure 5 shows examples of various types of electron guns and their brightness.
  • an electron gun that irradiates an electron beam can be implemented in various materials and shapes.
  • a W hairpin in which the emitter is implemented in the form of a hairpin made of tungsten (W)
  • W tip in which the emitter is implemented in the form of a tip made of tungsten
  • the present device There is a case of a C-beam in which the emitter is implemented in a pointed shape made of a carbon-based material such as carbon nanotube, such as the electron beam emitting unit 200 of (10).
  • brightness represents the performance of the electron gun, and the unit of brightness is expressed as "A/m 2 sr", which represents the current density per unit solid angle.
  • High-brightness electron guns are suitable for high-resolution imaging. Unlike other electron guns, the C-beam according to this device (10) has a small dispersion angle due to the high straightness of the electrons. Because it has higher brightness characteristics than other electron beams, it has the advantage of realizing high resolution.
  • the W hairpin or W tip is a relatively large spot size (i.e., diameter length) of the electron beam on the surface of the anode electrode, about several tens of ⁇ m (e.g., 20 ⁇ m to 40 ⁇ m). Since only the size is possible, there is a limit to spot size control.
  • the beam spot refers to the electron beam area irradiated on the anode electrode surface (i.e., the electron beam area on the anode electrode surface)
  • the spot size refers to the size of the beam spot (i.e., the electron beam size on the anode electrode surface). indicates.
  • the C-beam according to the present device 10 corresponds to a high-brightness electron beam source, the first condition can be satisfied even at various spot sizes of hundreds of nm to hundreds of ⁇ m (for example, 500 nm to 100 ⁇ m), so that other Compared to other materials, it has the advantage of controlling spot size.
  • the ratio occupied by the EUV band (i.e., in-band band of EUV) required in the present invention among the light of various wavelength bands generated by the anode electrode 300 is referred to as “conversion efficiency.”
  • Figure 6 shows data on the magnitude of conversion efficiency according to various anode voltages.
  • Equation 1 the conversion efficiency calculated based on the data in FIG. 6 can be expressed as Equation 1 below.
  • x represents “anode voltage” (unit: kV), which is the voltage applied to the anode electrode 300, and y represents conversion efficiency (unit: ⁇ W/mA).
  • conversion efficiency may vary depending on the magnitude of the anode voltage.
  • An anode voltage that causes the conversion efficiency to be above a certain level must be applied (hereinafter referred to as the “second condition”).
  • the optimization technology according to the invention may correspond to a technology that satisfies this second condition.
  • the conversion efficiency is the value of the EUV band power (In-band EUV power) per unit anode current for the EUV band (In-band EUV) among the light in various wavelength bands generated by the anode electrode 300. It represents and can have units of ⁇ W/mA.
  • the anode current represents the current applied to the anode electrode 300. Accordingly, the power (in-band EUV power) occupied by the EUV band among the light of various wavelength bands generated by the anode electrode 300 can be expressed as the product of the anode current and conversion efficiency.
  • the second condition it may be desirable to apply an anode voltage of 5kV to 20kV, and in the first case, an anode voltage of 7kV to 10kV is applied, indicating a high range of conversion efficiency values of 15 ⁇ W/mA or more. may be more preferable, and the second case in which an anode voltage of 8 kV is applied, which shows the highest conversion efficiency value of 15.93 ⁇ W/mA, may be even more preferable.
  • the first condition can also be satisfied simultaneously.
  • the anode electrode 300 made of silicon (Si) is not damaged by electron beam irradiation (i.e., the anode electrode 300 is prevented from being damaged) by a certain size or less (i.e., below the silicon damage threshold).
  • the electron beam emitting unit 200 must be able to irradiate an electron beam with a power of ) (hereinafter referred to as the “third condition”).
  • the optimization technology according to the invention may correspond to a technology that satisfies this third condition.
  • the power density of the electron beam corresponding to the silicon damage threshold was approximately 1 kW/mm 2 .
  • the power density of the electron beam corresponds to the electron beam power density on the surface of the anode electrode 300 made of silicon (Si) (i.e., the electron beam power density at the beam spot, unit: kW/mm 2 ), which is measured by various power meters. It can be measured using a power meter, etc.
  • an electron beam with a power density exceeding 1 kW/mm 2 is irradiated onto the surface of the anode electrode 300 made of silicon (Si), damage to the anode electrode 300 may occur. Accordingly, in order to satisfy the third condition, it may be desirable for an electron beam having a power density of 1 kW/mm 2 or less to be radiated from the beam spot of the anode electrode 300.
  • FIG. 7 shows values for the power density at silicon of an electron beam measured when a certain amount of DC is applied to the gate electrode 240.
  • the power in the EUV band (in-band EUV power) is 104 ⁇ W, and at spot sizes of 100 ⁇ m, 10 ⁇ m, 1 ⁇ m, and 500nm, 6kW/mm 2 , 662kW/mm 2 , and 66,242kW, respectively. It was found to have a power density of the electron beam (Power density at Silicon) of /mm 2 and 264,968 kW/mm 2 .
  • the electron beam power density appears to be 1 kW/mm 2 or more at all beam spots of 100 ⁇ m or less, so the third condition is not satisfied and the silicon Damage to the anode electrode 300 made of (Si) may occur.
  • DC-pulse driving which applies DC in the form of a pulse with a fixed pulse width.
  • FIG. 8 shows measured values of gate voltage and cathode current when various types of DC-pulses are applied to the gate electrode 240.
  • the gate voltage represents the voltage applied to the gate electrode 240
  • the cathode current represents the current applied to the cathode electrode 210.
  • FIG. 9 shows values for the power density at silicon of the electron beam measured when a DC-pulse is applied to the gate electrode 240.
  • the gate electrode 240 was driven to apply a voltage in the form of a DC-pulse with a fixed pulse width.
  • the power in the EUV band (In-band EUV power) is 119.5 ⁇ W, and at spot sizes of 100 ⁇ m, 10 ⁇ m, 1 ⁇ m, and 500nm, 0.8kW/mm 2 and 81.5kW/mm 2, respectively.
  • the electron beam power density at a beam spot of 100 ⁇ m was found to be less than 1 kW/mm 2 , satisfying the third condition.
  • the electron beam power density was found to be more than 1kW/mm 2 and did not satisfy the third condition.
  • DC-pulse driving is used for the gate electrode 240, and at the same time, the anode electrode 300 is operated so that the position of the electron beam irradiated to the anode electrode 300 (i.e., the position of the beam spot) changes with time. ) can be implemented to rotate or move.
  • FIG. 10 shows a conceptual diagram of the rotation and reciprocating motion of the anode electrode 300. That is, FIG. 10(b) shows the anode electrode 300 being moved by rotation and reciprocating movement from FIG. 10(a).
  • the anode electrode 300 may be implemented to move in a rotational motion.
  • the rotational movement of the anode electrode 300 may occur at a maximum of approximately 10,000 rpm.
  • the rotation axis A 1 of the anode electrode 300 may have an acute angle (an angle greater than 0° and less than a right angle) with respect to the optical axis of the electron beam incident on the anode electrode 300.
  • the anode electrode 300 reciprocates back and forth along the axis perpendicular to the rotation axis (A 1 ) (i.e., orthogonal axis) (A 2 ) or moves up and down around the rotation axis (A 1 ).
  • the device 10 may be implemented to move in a reciprocating motion (for example, reciprocating in a direction perpendicular to the plane or plane of the flat anode electrode 300).
  • a reciprocating motion for example, reciprocating in a direction perpendicular to the plane or plane of the flat anode electrode 300.
  • the device 10 further includes a moving means (not shown) for rotating or reciprocating the anode electrode 300.
  • FIG. 11 shows values for the power density at silicon of the electron beam measured when the anode electrode 300 is implemented to rotate while a DC-pulse is applied to the gate electrode 240.
  • the incident site of the electron beam (i.e., beam spot site) in the anode electrode 300 continues to vary with time and EUV is generated.
  • the negative effect on the anode electrode 300 caused by the electron beam is reduced in inverse proportion to the rotation speed of the anode electrode 300 compared to the case where the electron beam is continuously incident on only one part of the anode electrode 300, as shown in Figure 11.
  • it can have the effect of reducing the power density of the electron beam (Power density at Silicon).
  • the rotational movement of the anode electrode 300 is set to 10,000 rpm
  • the power density of the electron beam Power density at Silicon
  • the power in the EUV band (In-band EUV power) is 119.5 ⁇ W, and at spot sizes of 100 ⁇ m, 10 ⁇ m, 1 ⁇ m, and 500nm, 0.00008kW/mm 2 and 0.00815kW/mm 2, respectively.
  • a power density of the electron beam (Power density at Silicon) of 0.81529kW/mm 2 and 3.26115kW/mm 2 . That is, in this case, the electron beam power density was found to be less than 1 kW/mm 2 even at a beam spot of 1 ⁇ m, satisfying the third condition.
  • Figure 11 is a result limited to the case where the anode electrode 300 is implemented to perform only rotational movement, but when not only rotational movement but also reciprocating movement is performed simultaneously with respect to the anode electrode 300 depending on the execution time, the power density of the electron beam
  • the effect of reducing (Power density at Silicon) can be further doubled. This is because the interval (period) during which the same beam spot occurs is longer when rotation and reciprocating motion are performed simultaneously than when only rotation motion is performed. am. That is, in this case, the third condition can be satisfied with an electron beam power density of less than 1 kW/mm 2 even at a beam spot of 500 nm.
  • the electron beam power density is 1 kW/mm for a beam spot of 50 nm to hundreds of ⁇ m (e.g., 1 ⁇ m to 100 ⁇ m) through rotational movement with respect to the anode electrode 300.
  • the third condition can be satisfied with less than 2 .
  • the electron beam power density is reduced to less than 1 kW/mm 2 for a beam spot of tens of nm to hundreds of ⁇ m (e.g., 50 nm to 100 ⁇ m) through rotation and reciprocating motion with respect to the anode electrode 300.
  • the third condition can be satisfied.
  • the size of the beam spot may be adjusted according to the voltage applied to at least one focusing electrode 251 and 252 spaced apart from the gate electrode 240.
  • Figure 12 shows an example of performing a scanning operation on an electron beam while adjusting the spot size.
  • the scanning operation means controlling the irradiation direction of the electron beam. That is, by scanning the electron beam so that the portion of the electron beam irradiated to the anode electrode 300 rotates and moves with time, the same effect as the rotational movement described above can be achieved. Additionally, by scanning the electron beam so that the portion of the electron beam irradiated to the anode electrode 300 reciprocates over time, the same effect as the reciprocating motion described above can be achieved.
  • a condenser lens 410 that condenses the electron beam emitted from the electron beam emitting unit 200, and an enlarger that magnifies the electron beam condensed by the condenser lens 410 It may include 420 and a scanning unit 430 that performs a scanning operation to irradiate the anode electrode 300 by rotating and reciprocating with time with respect to the electron beam magnified by the expansion unit 420.
  • the condenser lens 410 may be replaced by the focusing electrodes 251 and 252, or may be added in addition to the focusing electrodes 251 and 252.
  • the optimization technology according to the present invention is a technology that satisfies at least one of the first to third conditions, and may preferably be a technology that satisfies multiple conditions among the first to third conditions, and more preferably the first to third conditions. It may be a technology that satisfies all of the through third conditions.
  • a plurality of n electron beam emitting units 200 may be provided (where n is a natural number of 2 or more).
  • each electron beam generated from the plurality of electron beam emitters 200 may be incident on at least one anode electrode 300 at the same or different positions or directions.
  • n anode electrodes 300 are provided, so that each electron beam can be irradiated to a dedicated anode electrode 300.
  • the plurality of electron beam emitting units 200 may generate electron beams one by one according to the pulse driving of the gate voltage applied to each gate electrode 240, or may generate a plurality of electron beams simultaneously.
  • the present invention configured as described above includes an anode electrode implemented with a silicon (Si) material rather than tin (Sn), and an extreme ultraviolet light source can be generated from the anode electrode made of silicon by irradiation of an electron beam, and the anode
  • the conversion efficiency which is the efficiency of the EUV band among the various wavelength bands of light generated by the electrode, is above a certain level, and has the advantage of irradiating an optimized electron beam to prevent damage to the anode electrode due to electron beam irradiation.
  • the present invention has an advantage in maintenance by reducing the negative effects on the anode electrode by using a low-power electron beam compared to a laser, thereby reducing debris.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)

Abstract

La présente invention concerne un dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons. Un dispositif de source de lumière selon un mode de réalisation de la présente invention délivre une source de lumière ultraviolette extrême sur la base d'un faisceau d'électrons, et comprend : une chambre; une unité d'émission de faisceau d'électrons qui génère un faisceau d'électrons à l'intérieur de la chambre et comprend une cathode, une pluralité d'émetteurs comprenant un matériau à base de carbone et disposés à distance sur la cathode, et une électrode de grille disposée au-dessus de la pluralité d'émetteurs et espacée de la pluralité d'émetteurs; et une anode qui est située à l'intérieur de la chambre et espacée de l'unité d'émission de faisceau d'électrons, et qui devient ionisée et génère un plasma lorsqu'elle est frappée par le faisceau d'électrons, moyennant quoi des rayons ultraviolets extrêmes sont générés à partir du plasma. L'anode comprend, sur sa surface, un matériau rayonnant à base de silicium qui génère le plasma.
PCT/KR2023/018853 2022-11-23 2023-11-22 Dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons WO2024112091A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0158306 2022-11-23
KR1020220158306A KR20240076128A (ko) 2022-11-23 2022-11-23 전자빔 기반 극자외선 광원 장치

Publications (1)

Publication Number Publication Date
WO2024112091A1 true WO2024112091A1 (fr) 2024-05-30

Family

ID=91196273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2023/018853 WO2024112091A1 (fr) 2022-11-23 2023-11-22 Dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons

Country Status (2)

Country Link
KR (1) KR20240076128A (fr)
WO (1) WO2024112091A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032776A (ja) * 2007-07-25 2009-02-12 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置における高速粒子の捕捉方法
JP2010123714A (ja) * 2008-11-19 2010-06-03 Ushio Inc 極端紫外光光源装置
US20110134405A1 (en) * 2007-12-19 2011-06-09 Asml Netherlands B.V. Radiation source, lithographic apparatus and device manufacturing method
US20150034845A1 (en) * 2013-07-24 2015-02-05 Semiconductor Manufacturing International (Shanghai) Corporation Euvl light source system and method
KR102430082B1 (ko) * 2020-03-13 2022-08-04 경희대학교 산학협력단 전자빔을 이용한 극자외선 광원 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032776A (ja) * 2007-07-25 2009-02-12 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置における高速粒子の捕捉方法
US20110134405A1 (en) * 2007-12-19 2011-06-09 Asml Netherlands B.V. Radiation source, lithographic apparatus and device manufacturing method
JP2010123714A (ja) * 2008-11-19 2010-06-03 Ushio Inc 極端紫外光光源装置
US20150034845A1 (en) * 2013-07-24 2015-02-05 Semiconductor Manufacturing International (Shanghai) Corporation Euvl light source system and method
KR102430082B1 (ko) * 2020-03-13 2022-08-04 경희대학교 산학협력단 전자빔을 이용한 극자외선 광원 장치

Also Published As

Publication number Publication date
KR20240076128A (ko) 2024-05-30

Similar Documents

Publication Publication Date Title
US7868850B2 (en) Field emitter array with split gates and method for operating the same
JP4262976B2 (ja) 電子電界エミッタの放出状態を改善するための方法
JP4777448B2 (ja) 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、及び電子線硬化装置
KR20020005392A (ko) 전자 방출기, 그 제조 방법 및 전자 빔 장치
US20120148027A1 (en) Field emission x-ray tube and method of operating the same
US20060290259A1 (en) Field emission device and field emission display device using the same
WO2013025080A1 (fr) Source de rayons x ayant des fonctions de refroidissement et de protection
WO2024112091A1 (fr) Dispositif de source de lumière ultraviolette extrême basé sur un faisceau d'électrons
CN1700397A (zh) 电子发射装置和采用该装置的电子发射显示器
WO2012074319A1 (fr) Dispositif de production de faisceaux électroniques ou de rayons x à grande échelle qui utilise des fils de nanotube en carbone
WO2021182887A2 (fr) Dispositif de source de lumière ultraviolette extrême utilisant des faisceaux d'électrons
JP2008500686A (ja) Ｘｕｖ線を発生させかつ放射するための装置
WO2011052971A2 (fr) Système de génération de rayons x utilisant un fil de nanotubes de carbone (cnt)
JP2013037784A (ja) 電子放出素子およびその製造方法
US8957394B2 (en) Compact high-voltage electron gun
WO2023038446A1 (fr) Dispositif de source de lumière ultraviolette extrême à base de faisceau d'électrons
WO2021137363A1 (fr) Émetteur de pâte de nanotubes de carbone (cnt), son procédé de fabrication et appareil de tube à rayons x l'utilisant
WO2023038448A1 (fr) Dispositif de source de lumière ultraviolette extrême à base de faisceau d'électrons et de gouttelettes
KR101121639B1 (ko) 전자 방출 장치의 음극부 구조
JP4727206B2 (ja) 電子ビーム装置
WO2020130642A1 (fr) Cathode froide comprenant un film de graphène, et canon à électrons l'utilisant
KR20070075659A (ko) 전자 방출 소자의 제조방법, 이에 의하여 제조된 전자 방출소자, 이를 적용한 백라이트 장치 및 전자 방출디스플레이 장치
Kobayashi et al. Electron emission microscope for use in electron emission sites observations
KR20050112450A (ko) 절연층을 이용한 빔 집속 구조를 갖는 전자 방출 소자 및이를 채용한 전자방출 표시장치
KR20070014750A (ko) 전자 방출 소자의 잔사 제거 방법 및 그 제조 방법