WO2024112045A1 - Circuit de génération de tension, circuit d'oscillateur et circuit intégré - Google Patents

Circuit de génération de tension, circuit d'oscillateur et circuit intégré Download PDF

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Publication number
WO2024112045A1
WO2024112045A1 PCT/KR2023/018702 KR2023018702W WO2024112045A1 WO 2024112045 A1 WO2024112045 A1 WO 2024112045A1 KR 2023018702 W KR2023018702 W KR 2023018702W WO 2024112045 A1 WO2024112045 A1 WO 2024112045A1
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Prior art keywords
circuit
resistor
temperature
reference voltage
resistance value
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PCT/KR2023/018702
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English (en)
Korean (ko)
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유상덕
박호종
안태준
여성대
Original Assignee
주식회사 엘엑스세미콘
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Publication of WO2024112045A1 publication Critical patent/WO2024112045A1/fr

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits

Definitions

  • Embodiments relate to voltage generation circuits, oscillator devices, and integrated circuits.
  • the electronic device may be equipped with an oscillator that generates a signal of a set frequency.
  • an oscillator generates a clock signal corresponding to a set frequency, and an electronic device can operate based on the oscillator's clock signal.
  • Oscillators must produce accurate and stable clock signals for the reliability of electronic devices.
  • the oscillator device includes a reference voltage generator circuit that generates a reference voltage (or driving voltage) and a core oscillator circuit that generates a signal with a frequency corresponding to the reference voltage.
  • the frequency of the signal generated in the core oscillator circuit can be controlled according to the reference voltage and can be changed by various other factors.
  • Various factors include, for example, temperature, threshold voltage of the transistor, mobility, etc. For example, as the temperature increases, the mobility can decrease and the frequency can decrease, and the threshold voltage can decrease and the frequency can increase.
  • the oscillation frequency of the signal output from the core oscillator circuit changes due to various factors such as temperature changes, etc., so the set frequency may not be stably provided. Therefore, there is a need to develop technology that can provide a stable frequency even if the temperature changes in the oscillator device.
  • One purpose of the embodiment is to provide a voltage generator circuit, an oscillator device, and an integrated circuit that can provide a stable oscillation frequency by reverse-compensating a reference signal input to an oscillator according to temperature changes.
  • Another purpose of the embodiment is to provide an oscillator device that can provide a stable oscillation frequency even when the temperature changes by connecting a resistor whose resistance value changes depending on temperature to a reference signal generation circuit that generates a reference signal input to the oscillator.
  • a generator circuit and an integrated circuit To provide a generator circuit and an integrated circuit.
  • the oscillator device includes: a first circuit that outputs a reference voltage; a second circuit including a resistor whose resistance value changes according to temperature changes and connected to the first circuit; and a third circuit that generates a signal with a frequency corresponding to the reference voltage output from the first circuit, wherein the reference voltage output from the first circuit is generated by the second circuit according to a change in temperature. The voltage value is adjusted.
  • the reference voltage may decrease as the temperature increases.
  • the second circuit includes: a first resistor having a first temperature coefficient; and a second resistor connected in series to the first resistor and having a second temperature coefficient different from the first temperature coefficient.
  • the rate of change for the temperature of the reference voltage output from the first circuit may be set.
  • the second circuit includes a fourth circuit configured such that the resistance value of the first resistor and the resistance value of the second resistor have a first combination ratio; and a fifth circuit configured such that the resistance value of the first resistor and the resistance value of the second resistor have a second combination ratio.
  • the third circuit includes a plurality of inverters connected in series, and may have a circular structure in which the output of the last inverter is input to the first inverter.
  • the voltage generation circuit includes: an amplifier that receives a first reference voltage and outputs a second reference voltage; a transistor controlled by a second reference voltage output from the amplifier; and a first circuit connected in series to the transistor and including a first resistor having a first temperature coefficient and a second resistor connected in series to the first resistor and having a second temperature coefficient different from the first temperature coefficient.
  • the voltage value of the second reference voltage output from the amplifier may be adjusted by the first resistor and the second resistor according to temperature changes.
  • the second reference voltage may decrease as the temperature increases.
  • the rate of change for the temperature of the second reference voltage output from the amplifier may be set.
  • the first circuit includes a second circuit connected to the transistor and configured to have a resistance value of the first resistor and a resistance value of the second resistor having a first combination ratio; and a third circuit connected to the transistor and configured such that the resistance value of the first resistor and the resistance value of the second resistor have a second combination ratio.
  • the integrated circuit includes: a first circuit that outputs a reference voltage; and a resistor whose resistance value changes according to temperature changes, and a second circuit connected to the first circuit, wherein the reference voltage output from the first circuit is connected to the second circuit according to temperature changes.
  • the voltage value is adjusted by .
  • the reference voltage may decrease as the temperature increases.
  • the second circuit includes: a first resistor having a first temperature coefficient; and a second resistor connected in series with the first resistor and having a second temperature coefficient different from the first temperature coefficient.
  • a stable oscillation frequency can be provided by reverse-compensating the reference signal input from the oscillator device to the core oscillator circuit according to temperature changes.
  • a resistor whose resistance value changes depending on temperature is connected to a reference signal generation circuit that generates a reference signal input from the oscillator device to the core oscillator circuit, thereby providing a stable oscillation frequency even when the temperature changes.
  • 1 is a block diagram showing the configuration of an oscillator device according to an embodiment.
  • Figure 2 is a graph showing the relationship between a reference signal, temperature, and frequency according to one embodiment.
  • Figure 3 is a graph showing the relationship between a reference signal, temperature, and frequency according to one embodiment.
  • Figure 4 is a block diagram showing circuits constituting an oscillator device according to an embodiment.
  • Figure 5 is a graph showing the relationship between temperature and frequency for each voltage according to one embodiment.
  • Figure 6 is a block diagram showing a voltage generation circuit of an oscillator device according to an embodiment.
  • Figure 7 is a block diagram showing the core oscillator circuit of an oscillator device according to an embodiment.
  • Figure 8 is a graph showing the relationship between temperature and reference voltage according to one embodiment.
  • Figure 9 is a graph showing experimental results between temperature and error rate according to one embodiment.
  • Figure 10 is a graph showing experimental results between frequency and error rate according to one embodiment.
  • first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, sequence, or order of the component is not limited by the term.
  • a component is described as being “connected” or “coupled” to another component, that component may be directly connected or connected to that other component, but there is no “other component” between each component. It should be understood that they may be “connected,” “coupled,” or “connected.”
  • reference signal and reference voltage may be used interchangeably.
  • 1 is a block diagram showing the configuration of an oscillator device according to an embodiment.
  • the oscillator device may include a reference voltage generation circuit 110, a linear regulator 120, a ring oscillator 130, etc.
  • the reference voltage generator circuit 110 may generate a reference voltage based on externally applied power.
  • the linear regulator 120 can adjust the reference voltage to a constant constant voltage and output it.
  • the ring oscillator 130 may oscillate based on the adjusted reference voltage to generate a pulse train.
  • the reference voltage generator circuit 110 may include an amplifier that receives an external power supply voltage and amplifies it. A reference voltage can be generated by the output value of the amplifier.
  • the linear regulator 120 may receive the reference voltage generated by the reference voltage generation circuit 110 and output the reference voltage as a constant voltage at a constant rate.
  • the ring oscillator 130 may include a plurality of (eg, odd number) inverters connected to each other in the form of a loop.
  • the ring oscillator 130 is driven by a constant voltage (VDDOSC) transmitted from the linear regulator 120 and can output a pulse train with a constant frequency.
  • VDDOSC constant voltage
  • Figure 2 is a graph showing the relationship between a reference signal, temperature, and frequency according to one embodiment.
  • the constant voltage (eg, driving voltage or power supply voltage (VDDOSC)) generated based on the reference signal may be supplied to an oscillator (eg, ring oscillator or core oscillator circuit).
  • the oscillator may generate a signal with a frequency (eg, oscillation frequency) corresponding to the constant voltage.
  • the frequency of the signal generated in the core oscillator circuit may vary linearly in proportion to the size of the power supply voltage (VDDOSC).
  • the power supply voltage VDDOSC having a constant voltage can be generated as a constant voltage even if the temperature changes.
  • the frequency of the signal generated by the oscillator may increase proportionally, as described above.
  • the frequency of a signal generated by an oscillator eg, a ring oscillator
  • the frequency of the signal generated by the oscillator may be determined by the power supply voltage (VDDOSC), the mobility of the transistor ( ⁇ ), and the threshold voltage (V TH ). Mobility ( ⁇ ) and threshold voltage (V TH ) may increase or decrease according to changes in temperature, as shown in Equation 2 and Equation 3 below, respectively.
  • the mobility ( ⁇ ) may decrease, and as the mobility ( ⁇ ) decreases, the frequency may decrease according to ⁇ Equation 1>.
  • the threshold voltage (V TH ) may decrease, and as the threshold voltage (V TH ) decreases, the frequency may increase according to ⁇ Equation 1>.
  • VDDOSC the voltage level of the power supply voltage
  • V TH the threshold voltage
  • VDDOSC constant power voltage
  • ⁇ the mobility
  • V TH threshold voltage
  • the voltage level of the power supply voltage VDDOSC can be adjusted so that a signal with a constant frequency is output even if the temperature changes.
  • the power supply voltage VDDOSC instead of supplying the power supply voltage VDDOSC at a constant rate, the power supply voltage VDDOSC may be set to be inversely proportional to temperature to offset frequency changes due to temperature changes.
  • Figure 3 is a graph showing the relationship between a reference signal, temperature, and frequency according to one embodiment.
  • the frequency may increase due to other factors (e.g., threshold voltage V TH ). . Accordingly, as the temperature rises, the power supply voltage (VDDOSC) can be lowered. If the voltage level of the power supply voltage (VDDOSC) is lowered as the temperature rises, the increase in frequency due to other factors (eg, threshold voltage (V TH )) can be offset. By doing this, even if the temperature in the oscillator increases as shown in FIG. 3, the frequency (eg, oscillation frequency) of the signal output from the oscillator can be maintained constant.
  • V TH threshold voltage
  • Figure 4 is a block diagram showing circuits constituting an oscillator device according to an embodiment.
  • the oscillator device may include a voltage rectifier circuit 410 and a core oscillator circuit 420 that generate a constant voltage from an externally applied power supply voltage.
  • the voltage rectification circuit 410 may include a reference voltage generator circuit 411, a linear regulator 413, a temperature compensation circuit 412, etc.
  • the reference voltage generator circuit 411 may generate a reference voltage with power applied from the outside.
  • the linear regulator 413 may adjust the reference voltage to a constant constant voltage and output the adjusted reference voltage.
  • the temperature compensation circuit 412 can adjust the reference voltage according to temperature.
  • the core oscillator circuit 420 may include a ring oscillator 421 that oscillates based on the adjusted reference voltage to generate a pulse train.
  • the reference voltage generator circuit 411 may include an amplifier that receives an external power supply voltage and amplifies it. A reference voltage can be generated by the output value of this amplifier.
  • the linear regulator 413 may receive the reference voltage generated by the reference voltage generator circuit 411 and output the reference voltage as a constant voltage at a constant rate. Since the constant voltage can be used as the power supply voltage of the ring oscillator 421, the constant voltage will be referred to as the power supply voltage.
  • the temperature compensation circuit 412 is connected to the reference voltage generation circuit 411 and can control the reference voltage output from the reference voltage generation circuit 411 to be adjusted according to temperature changes.
  • the temperature compensation circuit 412 may include at least one resistor whose resistance value changes depending on temperature changes. As the resistance value of the resistor included in the temperature compensation circuit 412 changes according to the temperature change, the reference voltage output from the reference voltage generator circuit 411 may be adjusted according to the temperature and the adjusted reference voltage may be output. For example, the reference voltage output from the reference voltage generation circuit 411 may decrease as the temperature increases.
  • the ring oscillator 421 may include a plurality of (eg, odd number) inverters connected to each other in the form of a loop.
  • the ring oscillator 421 is driven by a constant voltage transmitted from the linear regulator 413 and can output a pulse train with a constant frequency. Since the constant voltage input to the ring oscillator 421 is generated in response to the reference voltage, the constant voltage may rise or fall as the reference voltage rises or falls.
  • the reference voltage can be adjusted according to temperature changes as described above. , the constant voltage can be adjusted according to temperature changes.
  • the ring oscillator 421 of the core oscillator circuit 420 can generate a signal of a constant frequency regardless of temperature changes by receiving a constant voltage adjusted according to temperature changes.
  • Figure 5 is a graph showing the relationship between temperature and frequency for each voltage according to one embodiment.
  • the frequency of the signal output from the oscillator may increase, as described above in Equation 1.
  • VDDOSC constant power voltage
  • the frequency increase rate according to the temperature increase is 0.263MHz/°C
  • the frequency increase rate according to the temperature increase is 0.248. It can be expressed as MHz/°C.
  • the frequency increase rate according to temperature in 503 can be 0.184MHz/°C.
  • the rate of increase in frequency compared to the power supply voltage may be 282.35 MHz/V, and at 0°C, the rate of increase in frequency compared to the power supply voltage (VDDOSC) may be 292.88 MHz/V.
  • the rate of increase in frequency compared to the power supply voltage is 279.15 MHz/V.
  • the rate of increase in frequency compared to the power supply voltage is 246.35 MHz/V.
  • the rate of increase in frequency compared to the power supply voltage (VDDOSC) is 279.15 MHz/V.
  • the rise rate can be shown as 220.62MHz/V.
  • the graph shown in FIG. 5 can be expressed as ⁇ Equation 4> and ⁇ Equation 5> below.
  • freq0 may mean the frequency of the signal output from the oscillator when the temperature is 25°C and the power supply voltage (VDDOSC) is 1V.
  • ⁇ may refer to the slope of frequency that increases with an increase in temperature, and the unit is Hz/°C.
  • ⁇ may refer to the slope of frequency that increases as the power supply voltage (VDDOSC) increases, and the unit is HzV. am.
  • VDD0 may mean the power supply voltage (VDDOSC) at a temperature of 25°C.
  • ⁇ may refer to the slope of the power supply voltage (VDDOSC) that increases as the temperature increases, and the unit is V/°C.
  • Equation 6 in order to consistently output freq0, which is the frequency at 25°C (e.g., room temperature) even if the temperature changes, “ ⁇ + ⁇ must be 0 and VDD0 must be 1V. Accordingly, the slope ⁇ of the power supply voltage VDDOSC according to temperature change can be determined as shown in Equation 7 below.
  • the power supply voltage (VDDOSC) is set to decrease by ⁇ as the temperature increases as shown in ⁇ Equation 7>, so that the frequency of the signal output from the oscillator is independent of the temperature. It can be kept constant.
  • ⁇ can be set by ⁇ and ⁇ as in ⁇ Equation 7>.
  • ⁇ and ⁇ may be determined from simulation results as shown in FIG. 5. The simulation can set the optimal slope by measuring the frequency at two points at arbitrary temperatures.
  • Figure 6 is a block diagram showing a voltage generation circuit of an oscillator device according to an embodiment.
  • a voltage rectification circuit 600 (e.g., the voltage rectification circuit 410 of FIG. 4) that generates a constant voltage (e.g., power supply voltage VDDOSC) supplied to an oscillator (e.g., core oscillator circuit) (or
  • the voltage generation circuit may include a reference voltage generation circuit 610, a temperature compensation circuit 620, a linear regulator 630, and a first controller 640.
  • the reference voltage generator circuit 610 may include a first amplifier 611, a first transistor (M1), a second transistor (M2), a third resistor (R3), etc.
  • the first amplifier 611 may receive the first reference voltage (REF_OSC) as a reference voltage at the inverting input terminal (-).
  • the output of the first amplifier 611 may be input to the gate terminal of the first transistor (M1) and the gate terminal of the second transistor (M2).
  • One terminal (eg, source terminal) of the first transistor M1 may be connected to a line of VDDI, and the other terminal (eg, drain terminal) may be connected to the temperature compensation circuit 620.
  • the other terminal of the first transistor (M1) may be fed back and connected to the non-inverting input terminal (+) of the first amplifier 611.
  • One terminal (eg, source terminal) of the second transistor (M2) may be connected to the line of VDDI, and the other terminal (eg, drain terminal) may be connected to the third resistor (R3).
  • the Current may flow in the first transistor (M1) and the second transistor (M2) by the output signal of the first amplifier 611.
  • the size of the current flowing through the first transistor M1 (for example, the current flowing from the source terminal to the drain terminal) may be adjusted by the resistance value set in the temperature compensation circuit 620.
  • the temperature compensation circuit 620 may include a plurality of temperature compensation circuits connected in parallel.
  • the first temperature compensation circuit, the second temperature compensation circuit, ..., the Nth temperature compensation circuit may be connected in parallel.
  • the first controller 640 controls the switching circuit (e.g., transistor) included in each temperature compensation circuit, so that at least one of the plurality of temperature compensation circuits is connected to the first transistor of the reference voltage generation circuit 610. It can be connected to (M1).
  • Each temperature compensation circuit may include a switching circuit and a resistor (eg, a first resistor and a second resistor).
  • the first temperature compensation circuit may include a first switching circuit 621-A, a 1-1 resistor 622-A, and a 2-1 resistor 623A.
  • the second temperature compensation circuit may include a second switching circuit (621-B), a 1-2 resistor (622-B), and a 2-2 resistor (623B).
  • the N-th temperature compensation circuit may include an N-th switching circuit (621-N), a 1-N resistor (622-N), and a 2-N resistor (623N).
  • Each temperature compensation circuit can set the change in resistance value depending on temperature differently by combining two resistors.
  • Each switching circuit (621-A, 621-B, ..., 621-N) may be turned on/off by a control signal from the first controller 640.
  • Each switching circuit (621-A, 621-B, ..., 621-N) may be composed of a transistor (eg, MOSFET), but is not limited thereto.
  • each temperature compensation circuit The first resistors (622-A, 622-B, ..., 622-N) and second resistors (623-A, 623-B, ..., 623-N) constituting each temperature compensation circuit are connected to each other. Can have different temperature coefficients.
  • each resistor may have characteristics as shown in ⁇ Table 1> below.
  • Rsh represents the sheet resistance value for each resistor type.
  • TC1 represents the temperature coefficient for each resistor type.
  • the change in resistance value of each resistor depending on temperature may vary depending on the value of TC1, and the unit of TC1 may be 1/°C.
  • First resistors (622-A, 622-B, ..., 622-N) and second resistors (623-A, 623-B, . .., 623-N) can be configured. For example, by adjusting the combination ratio of the two types of resistors, the voltage (VREFA) output from the reference voltage generation circuit 610 (hereinafter referred to as the second reference voltage) or the constant voltage (or power supply) output from the voltage generation circuit 600.
  • the characteristic slope of voltage (VDDOSC)) can be adjusted with respect to temperature.
  • the first resistors (622-A, 622-B, ..., 622-N) are configured as diffusion resistors
  • the second resistors (623-A, 623-B, ..., 623) -N) may be configured as a poly resistor, but embodiments described later are not limited thereto.
  • the first switching circuit 621-A included in the first temperature compensation circuit is controlled to be in the on state, and the switching circuit 621-B included in the remaining temperature compensation circuit is controlled to be in the on state. to 621-N) can be controlled in the off state.
  • the first temperature compensation circuit may be connected to the first transistor M1 of the reference voltage generator circuit 610.
  • the rate of change (or slope) according to the temperature change of the second reference voltage VREFA output from the reference voltage generation circuit 610 may be determined as the first value.
  • the second switching circuit 621-B included in the second temperature compensation circuit is controlled to be in the on state, and the remaining temperature compensation circuits 621-A, 621-C to 621- The switching circuit included in N) can be controlled to be in the off state.
  • a second temperature compensation circuit may be connected to the first transistor M1 of the reference voltage generation circuit 610.
  • the second temperature compensation circuit when the second temperature compensation circuit is connected to the first transistor (M1) of the reference voltage generation circuit 610, the sheet resistance of the 1-2 resistor (622-B) and the 2-2 resistor (623-B) Depending on the value and the temperature coefficient TC1, the rate of change (or slope) according to the temperature change of the second reference voltage VREFA output from the reference voltage generation circuit 610 may be determined as the second value.
  • the N-th switching circuit (621-N) included in the N-th temperature compensation circuit is controlled to be in the on state, and the switching circuits (621-A to 621) included in the remaining temperature compensation circuits are switched on. -(N-1)) can be controlled to be in the off state.
  • the Nth temperature compensation circuit may be connected to the first transistor (M1) of the reference voltage generation circuit 610.
  • the N-th temperature compensation circuit when the N-th temperature compensation circuit is connected to the first transistor (M1) of the reference voltage generation circuit 610, the sheet resistance of the 1-N resistor (622-N) and the 2-N resistor (623-N) Depending on the value and the temperature coefficient TC1, the rate of change (or slope) according to the temperature change of the second reference voltage VREFA output from the reference voltage generation circuit 610 may be determined as the Nth value.
  • the gate terminals of the first transistor M1 and the second transistor M2 included in the reference voltage generator circuit 610 are commonly connected to the output of the first amplifier 611, thereby forming a current mirror circuit.
  • the first transistor M1 and the second transistor M2 are commonly connected to each other through a gate terminal, so that a mirrored current may flow through the second transistor M2.
  • the voltage (e.g., second reference voltage VREFA) between the second transistor M2 and the third resistor R3 is connected to a specific temperature compensation circuit selectively connected according to the control signal of the first controller 640. It may have slope characteristics depending on the temperature determined by For example, as the temperature increases, the second reference voltage VREFA for the constant current output from the reference voltage generation circuit 600 may decrease. For example, the rate (eg, slope) at which the second reference voltage VREFA decreases as the temperature increases may change depending on the selection of the temperature compensation circuit.
  • the linear regulator 630 may include a second amplifier 631, a fourth resistor (R4), a fifth resistor (R5), etc.
  • the second reference voltage VREFA which is the output voltage of the reference voltage generator circuit 610, may be applied to the inverting input terminal (-) of the second amplifier 631.
  • a fourth resistor (R4) and a fifth resistor (R5) may be connected to the output terminal of the second amplifier 631.
  • the terminal between the fourth resistor (R4) and the fifth resistor (R5) may be connected to the non-inverting input terminal (+) of the second amplifier 631.
  • the voltage of the output signal of the second amplifier 631 (hereinafter referred to as the third reference voltage or power supply voltage VDDOSC) is divided by the fourth resistor R4 and the fifth resistor R5. 2 It can be applied to the non-inverting input terminal (+) of the amplifier 631.
  • the second reference voltage (VREFA) of 0.5V is input to the second amplifier 631 as 0.5V
  • the fourth resistor (R4) and the fifth resistor (R5) are set to the same resistance value
  • the linear regulator (630) can output a power supply voltage (VDDOSC) of 1V.
  • a power supply voltage (VDDOSC) of a certain magnitude may be output by the linear regulator 630.
  • the power supply voltage VDDOSC may decrease with a constant slope as temperature increases, based on the connection of the temperature compensation circuit 630 described above.
  • a resistor (R ESD ) and a capacitor (C OUT ) for electrostatic discharge (ESD) may be connected in parallel to the output terminal of the linear regulator 630.
  • Figure 7 is a block diagram showing the core oscillator circuit of an oscillator device according to an embodiment.
  • the core oscillator circuit 700 of the oscillator device includes a ring oscillator 710 (e.g., the ring oscillator 421 in FIG. 4) and a second controller. It may include (720).
  • the core oscillator circuit 700 may include a plurality of transistors (a third transistor (M3), a fourth transistor (M4), a fifth transistor (M5), and a sixth transistor (M6).
  • the third transistor M3 and fourth transistor M4 may be PMOS transistors
  • the fifth transistor M5 and sixth transistor M6 may be NMOS transistors, but are not limited thereto.
  • the source terminal of the third transistor (M3) may be connected to the output terminal of the voltage generation circuit (600 in FIG. 6) to provide the power supply voltage (VDDOSC), and the drain terminal of the fourth transistor (M4) It can be connected to the source terminal of .
  • the source terminal of the fourth transistor M3 may be connected to the drain terminal of the third transistor M3, and the drain terminal may be connected to the drain terminal of the fifth transistor M5.
  • the source terminal of the fifth transistor M5 may be connected to the drain terminal of the sixth transistor M6, and the drain terminal may be connected to the drain terminal of the fourth transistor M4.
  • the source terminal of the sixth transistor M6 may be connected to the output terminal of the voltage generation circuit (600 in FIG. 6), and the drain terminal may be connected to the source terminal of the fifth transistor M5.
  • the voltage input to the gate terminals of the fourth transistor M4 and the fifth transistor M5 may be generated based on the oscillator enable signal A_OSC_EN.
  • the first inverter 701 can receive the oscillator enable signal (A_OSC_EN) and output a PD signal
  • the second inverter 702 can receive the PD signal output from the first inverter 701 and output a PDB signal. can be output.
  • the PD signal output from the first inverter 701 may be supplied to the gate terminal of the fourth transistor (M4)
  • the PDB signal output from the second inverter 702 may be supplied to the gate terminal of the fifth transistor (M5). It can be.
  • inverters 701 and 702 are shown in the drawing, more inverters may be provided.
  • a terminal between the drain terminal of the fourth transistor M4 and the drain terminal of the fifth transistor M5 may be connected to the input terminal of the third inverter 703.
  • the output terminal of the third inverter 703 may be connected to the input terminal of the fourth inverter 704.
  • the output terminal of the fourth inverter 704 may be connected to a variable resistor (R TRIM ).
  • the first terminal of the variable resistor (R TRIM ) may be connected to the output terminal of the fourth inverter 704, and the second terminal may be connected to the gate terminal of the third transistor (M3).
  • a node between the output terminal of the third inverter 703 and the input terminal of the fourth inverter 704 may be connected to the first terminal of the first capacitor C1.
  • the third inverter 703 and the fourth inverter 704 are connected in series, and may have a circulation structure in which the output of the fourth inverter 704 is input to the third inverter 703.
  • the second terminal of the first capacitor C1 may be connected to a node between the second terminal of the variable resistor R TRIM and the gate terminal of the third transistor M3.
  • the second terminal of the first capacitor C1 may be connected to the variable capacitor C TRIM .
  • the second controller 720 may adjust the frequency of the signal D_OSCCLK output from the core oscillator circuit 700 by adjusting the resistance value of the variable resistor (R TRIM ) or the capacitance of the variable capacitor (C TRIM ).
  • the input terminal of the third inverter 703 may be connected to the input terminal of the ring oscillator 710.
  • the ring oscillator 710 may include a plurality of inverters 711, 712, 713, and 714 connected to each other in a loop form.
  • the drawing shows four inverters (711, 712, 713, and 714), but more inverters may be provided.
  • the ring oscillator 710 is driven by the voltage provided from the input terminal of the third inverter 703 and can output a signal (D_OSCCLK) having a constant frequency.
  • the voltage input to the ring oscillator 710 is generated in response to the reference voltage (e.g., VDDOSC) output from the above-described voltage generation circuit 600, so as the reference voltage (VDDSOC) rises or falls, the ring oscillator 710
  • the input voltage may rise or fall.
  • the reference voltage (VDDSOC) can be adjusted according to temperature changes as described above. Accordingly, the ring oscillator 710 of the core oscillator circuit 700 can generate a signal with a constant frequency regardless of temperature changes in response to the constant voltage VDDOSC adjusted according to temperature changes.
  • Figure 8 is a graph showing the relationship between temperature and reference voltage according to one embodiment.
  • the first temperature compensation circuit when the first controller 640 of FIG. 6 described above outputs a control signal corresponding to a code value of 0, the first temperature compensation circuit may be selected.
  • the reference voltage (VDDOSC) may be generated as 1.014V at -40°C and 0.942V at 145°C.
  • the 64th temperature compensation circuit When the first controller 640 in FIG. 6 outputs a control signal corresponding to code value 63, the 64th temperature compensation circuit may be selected.
  • the reference voltage (VDDOSC) can be generated as 1.0584V at -40°C and 0.859V at 145°C.
  • the change in voltage according to temperature is greater in the 64th temperature compensation circuit than in the first temperature compensation circuit.
  • a specific integrated circuit or an oscillator device that outputs a specific frequency can be controlled to select a specific temperature compensation circuit by considering changes in voltage depending on temperature.
  • the code value 38 can be set to select (or connect) the 39th temperature compensation circuit.
  • the code value 43 can be set to select (or connect) the 44th temperature compensation circuit.
  • you want to generate a signal of a third frequency eg, 109.5 MHz
  • Figure 9 is a graph showing experimental results between temperature and error rate according to one embodiment.
  • Figure 10 is a graph showing experimental results between frequency and error rate according to one embodiment.
  • a stable oscillation frequency can be provided by reverse-compensating the reference signal input from the oscillator device to the core oscillator circuit according to temperature changes.
  • a stable oscillation frequency can be provided even if the temperature changes. there is.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

La présente invention concerne un circuit de génération de tension, un oscillateur et un circuit intégré, l'oscillateur comprenant : un premier circuit pour délivrer une tension de référence ; un deuxième circuit qui est connecté au premier circuit et comprend une résistance dont la valeur de résistance change en réponse à des changements de température ; et un troisième circuit pour générer un signal à une fréquence correspondant à la tension de référence délivrée par le premier circuit, la valeur de la tension de référence délivrée par le premier circuit étant ajustée par le deuxième circuit en réponse à des changements de température.　Selon un mode de réalisation, l'oscillateur peut fournir une fréquence d'oscillation stable par compensation inverse du signal de référence, entré dans un circuit oscillateur central, pour les changements de température.
PCT/KR2023/018702 2022-11-25 2023-11-20 Circuit de génération de tension, circuit d'oscillateur et circuit intégré WO2024112045A1 (fr)

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KR10-2022-0160483 2022-11-25
KR1020220160483A KR20240077994A (ko) 2022-11-25 2022-11-25 오실레이터 장치, 오실레이터를 위한 전압 발생 회로 및 집적 회로

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180995A (en) * 1991-09-13 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Temperature-compensated ring oscillator circuit formed on a semiconductor substrate
KR20100061900A (ko) * 2008-12-01 2010-06-10 (주)에프씨아이 링 오실레이터의 주파수 변동 개선을 위한 저잡음 기준전압발생회로
US20100176886A1 (en) * 2009-01-12 2010-07-15 Honeywell International Inc. Circuit for Adjusting the Temperature Coefficient of a Resistor
JP5368626B2 (ja) * 2010-02-19 2013-12-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR20190141868A (ko) * 2018-06-15 2019-12-26 삼성전자주식회사 발진기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180995A (en) * 1991-09-13 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Temperature-compensated ring oscillator circuit formed on a semiconductor substrate
KR20100061900A (ko) * 2008-12-01 2010-06-10 (주)에프씨아이 링 오실레이터의 주파수 변동 개선을 위한 저잡음 기준전압발생회로
US20100176886A1 (en) * 2009-01-12 2010-07-15 Honeywell International Inc. Circuit for Adjusting the Temperature Coefficient of a Resistor
JP5368626B2 (ja) * 2010-02-19 2013-12-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR20190141868A (ko) * 2018-06-15 2019-12-26 삼성전자주식회사 발진기

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