WO2024106072A1 - Corps de circuit électrique et dispositif de conversion de puissance - Google Patents

Corps de circuit électrique et dispositif de conversion de puissance Download PDF

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Publication number
WO2024106072A1
WO2024106072A1 PCT/JP2023/036929 JP2023036929W WO2024106072A1 WO 2024106072 A1 WO2024106072 A1 WO 2024106072A1 JP 2023036929 W JP2023036929 W JP 2023036929W WO 2024106072 A1 WO2024106072 A1 WO 2024106072A1
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WIPO (PCT)
Prior art keywords
semiconductor device
cooling member
electric circuit
circuit body
conductive connection
Prior art date
Application number
PCT/JP2023/036929
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English (en)
Japanese (ja)
Inventor
円丈 露野
裕二朗 金子
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日立Astemo株式会社
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Publication of WO2024106072A1 publication Critical patent/WO2024106072A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Definitions

  • the present invention relates to an electric circuit and a power conversion device.
  • Power conversion devices that use the switching operation of semiconductor elements have high conversion efficiency and are therefore widely used in consumer, automotive, railway and substation equipment.
  • Semiconductor elements generate heat when electricity is passed through them. For this reason, a cooling member is provided to cool the semiconductor element, and an insulating sheet is also provided between the semiconductor device incorporating the semiconductor element and the cooling member disposed opposite the semiconductor device.
  • the cooling of semiconductor devices requires high reliability to maintain heat dissipation, particularly in automotive applications.
  • Patent Document 1 discloses a semiconductor device in which one end of a terminal member is electrically connected to a conductor layer inside the molded resin and the other end of the terminal member protrudes from the molded resin and is electrically connected to a cooling means, and the conductor layer and the cooling means are electrically connected via the terminal member.
  • Patent Document 1 The semiconductor device described in Patent Document 1 has a reduced insulation reliability of the insulating sheet.
  • the electric circuit body comprises a semiconductor device in which a semiconductor element, a conductor plate to which the semiconductor element is bonded, and an insulating sheet adhered to the heat dissipation surface of the conductor plate are integrally sealed with a sealing material, a cooling member disposed opposite the semiconductor device for cooling heat generated by the semiconductor element, and a heat-conducting member disposed between the insulating sheet and the cooling member, the insulating sheet having a resin insulating layer covering the conductor plate on one side and adhered to the heat dissipation surface of the conductor plate, and a surface conductor layer adhered to the other side of the resin insulating layer and exposed on the surface of the semiconductor device, and a conductive connection portion is formed within the projected area of the surface conductor layer and in an area on the outer periphery of the adhesive area between the conductor plate and the resin insulating layer, electrically connecting the surface conductor layer and the cooling member to each other.
  • the present invention can improve the insulation reliability of the insulating sheet.
  • FIG. 2 is a plan view of an electric circuit body according to the embodiment. 2 is a cross-sectional view of the electric circuit body taken along line XX. 4 is a cross-sectional perspective view of the electric circuit body taken along line YY. FIG. FIG. 2 is a cross-sectional perspective view of the electric circuit body taken along line XX. FIG. 2 is a semi-transparent plan view of the semiconductor device.
  • FIG. 1 is a circuit diagram of a semiconductor device. 5A to 5D are cross-sectional views illustrating a manufacturing process of a semiconductor device. 5A and 5B are cross-sectional views illustrating a manufacturing process of an electric circuit body. 1A and 1B are enlarged cross-sectional views of main parts of Comparative Example 1 and Comparative Example 2.
  • FIG. 1A and 1B are cross-sectional views taken along lines XX and YY of Modification 1.
  • 13A and 13B are cross-sectional views of modified example 2 taken along lines XX and YY.
  • 13A to 13D are semi-transparent plan views of modified examples 3 to 6.
  • FIG. 2 is a circuit diagram of a power conversion device.
  • FIG. 2 is an external perspective view of the power conversion device.
  • 1 is a cross-sectional perspective view of the power conversion device taken along line XV-XV.
  • FIG. 1 is a plan view of an electric circuit body 400 according to an embodiment.
  • the electric circuit body 400 is made up of the semiconductor device 300 and a cooling member 340.
  • the electric circuit body 400 is made up of three semiconductor devices 300 arranged in parallel.
  • the semiconductor device 300 incorporates the semiconductor elements 155 and 157, which are described later, sealed with a sealing material 360. Both sides of the semiconductor device 300 dissipate heat caused by the switching operation of the semiconductor elements 155 and 157. Furthermore, the terminals connected to the semiconductor elements 155 and 157 of the semiconductor device 300 are led out from the sealing material 360 on the side of the semiconductor device 300. These terminals are power terminals through which a large current flows, such as the positive terminal 315B and the negative terminal 319B connected to the capacitor module 500 (see FIG. 13) of the DC circuit, and the AC terminal 320B connected to the motor generators 192 and 194 (see FIG. 13) of the AC circuit.
  • the terminals led out from the sealing material 360 on the side of the semiconductor device 300 are the lower arm gate terminal 325L, the collector sense terminal 325C, the emitter sense terminal 325E, the upper arm gate terminal 325U, and other terminals.
  • the electric circuit body 400 in which three semiconductor devices 300 are arranged in parallel, functions as a power conversion device 200 that converts DC current and AC current by switching operations of the semiconductor elements 155 and 157. Note that the number of semiconductor devices 300 included in the electric circuit body 400 is not limited to three, and can be set arbitrarily according to various forms of the electric circuit body 400.
  • the cooling member 340 is disposed opposite the semiconductor device 300, and cools the heat generated by the switching operation of the semiconductor elements 155, 157. Specifically, the cooling member 340 has a flow path formed therein through which a refrigerant flows, and the heat generated by the semiconductor device 300 is cooled by the refrigerant flowing through the flow path.
  • the refrigerant used is water or an antifreeze made by mixing ethylene glycol with water.
  • the cooling member 340 is preferably made of aluminum, which has high thermal conductivity and is lightweight. It is manufactured by extrusion molding, forging, brazing, etc.
  • FIG. 2 is a cross-sectional view of the electric circuit body 400 shown in FIG. 1 taken along line X-X
  • FIG. 3 is a cross-sectional perspective view of the electric circuit body 400 shown in FIG. 1 taken along line Y-Y
  • FIG. 4 is a cross-sectional perspective view of the electric circuit body 400 shown in FIG. 1 taken along line X-X, but shows the semiconductor device 300 with the cooling member 340 and the heat conductive member 453 removed from the electric circuit body 400.
  • the electric circuit body 400 includes a pressure mechanism 341 that applies pressure to the cooling members 340 provided on both sides of the semiconductor device 300 by clamping them from both sides.
  • the pressure mechanism 341 is simplified in illustration, but it is, for example, a mechanism that connects the cooling members 340 on both sides to each other with screws or the like and applies pressure to the semiconductor device 300 side.
  • the power conversion device includes an active element 155 and a diode 156 as first semiconductor elements forming the upper arm circuit (see FIGS. 5 and 6 described below).
  • the active element may be made of Si, SiC, GaN, GaO, C, or the like.
  • a separate diode may be omitted.
  • the collector side of the first semiconductor element 155 is bonded to a second conductor plate 431. Solder or sintered metal may be used for this bond.
  • the first conductor plate 430 is bonded to the emitter side of the first semiconductor element 155.
  • the second semiconductor element forming the lower arm circuit includes an active element 157 and a diode 158 (see FIGS. 5 and 6 described below).
  • the collector side of the second semiconductor element 157 is bonded to a fourth conductor plate 433.
  • the third conductor plate 432 is bonded to the emitter side of the second semiconductor element 157.
  • the conductive plates 430, 431, 432, and 433 are not particularly limited as long as they are made of a material with high electrical conductivity and thermal conductivity, but it is preferable to use metallic materials such as copper- or aluminum-based materials, or composite materials of metallic materials and diamond, carbon, ceramic, or other materials with high thermal conductivity. These may be used alone, or may be plated with Ni, Ag, or the like to improve adhesion to solder or sintered metal.
  • the surfaces opposite to the surfaces bonded to the semiconductor elements 155, 156, 157 and 158 serve as the heat dissipation surfaces of the conductor plates 430, 431, 432 and 433. Since the conductor plates 430, 431, 432 and 433 and the cooling member 340 have different electric potentials, insulating sheets 440 and 441 are used between them and the heat dissipation surfaces.
  • the insulating sheets 440, 441 are formed by laminating a resin insulating layer 443, a surface conductor layer 444, and an intermediate conductor layer 445.
  • the resin insulating layer 443 covers the conductor plates 430, 431, 432, 433 on one side and is adhered to the heat dissipation surfaces of the conductor plates 430, 431, 432, 433.
  • the surface conductor layer 444 is adhered to the other side of the resin insulating layer 443 and is exposed on the surface of the semiconductor device 300.
  • the intermediate conductor layer 445 is made of a conductive material and is embedded in the resin insulating layer 443 at approximately the middle position in the thickness direction.
  • the resin insulating layer 443 of the insulating sheets 440 and 441 is not particularly limited as long as it has adhesive properties with the conductor plates 430, 431, 432, and 433, but an epoxy resin-based resin insulating layer with powdered inorganic filler dispersed therein is preferable. This is because it has a good balance between adhesiveness and heat dissipation.
  • the insulating sheets 440 and 441 are provided with a surface conductor layer 444 such as a metal foil on the side that contacts the heat conductive member 453 described below.
  • the planar size of the intermediate conductor layer 445 embedded in the resin insulating layer 443 of the insulating sheets 440 and 441 is equal to or slightly larger than the projected position of the conductor plates 430, 431, 432, and 433.
  • the insulating sheets 440 and 441 can be made to withstand a high voltage by utilizing voltage sharing.
  • the intermediate conductor layer 445 is provided appropriately according to the degree and necessity of the high voltage withstand.
  • the insulating sheets 440, 441 are cured at the same time as the sealing material 360 in the transfer molding process.
  • a release sheet or a surface conductor layer 444 is provided on the contact surface between the insulating sheets 440, 441 and the mold to prevent them from adhering to the mold.
  • Release sheets have poor thermal conductivity and therefore require a process for peeling them off after transfer molding.
  • a surface conductor layer 444 such as metal foil is used, by selecting a metal with high thermal conductivity such as copper or aluminum, it can be used without peeling off after transfer molding.
  • the uncured sealing material 360 is injected into the mold at a predetermined pressure, and the application of this molding pressure causes the insulating sheets 440, 441 to deform and conform to the recesses provided in the mold, forming convex portions facing the cooling member 340.
  • These convex portions become conductive connection portions 460 that electrically connect the surface conductor layers 444 of the insulating sheets 440, 441 to the cooling member 340. Details of the conductive connection portions 460 will be described later.
  • the semiconductor elements 155, 156, 157, and 158, the conductive plates 430, 431, 432, and 433, and the insulating sheets 440 and 441 are sealed with the sealing material 360 by transfer molding to form the semiconductor device 300.
  • the heat conductive member 453 is disposed between the semiconductor device 300 and the cooling member 340 to reduce contact thermal resistance.
  • the heat conductive member 453 can be made of grease, gel grease, phase change sheet, or other material that has fluidity at room or high temperatures, but to ensure workability and long-term reliability, a curable heat conductive material that has fluidity when uncured and loses fluidity after curing is preferable.
  • the curable heat conductive member 453 has the advantage of low viscosity and excellent workability when applied, and can improve mechanical properties by curing. Curing can be achieved by heat curing, moisture curing, ultraviolet curing, etc., but heat curing is preferable for deep curing.
  • Thermal conductive member 453 is a material made by mixing a highly thermal conductive material such as metal, ceramic, or carbon-based material with resin.
  • the most desirable resin is silicone resin, which has a small change in elastic modulus from around -40°C to around 200°C.
  • insulating materials are preferred for thermal conductive member 453. This is to prevent a decrease in insulation due to the material of thermal conductive member 453 adhering to the vicinity of the terminals.
  • the thermal conductive member 453 is made of an insulating material
  • the potential difference between the conductive plates 430, 431, 432, 433 and the cooling member 340 is not only shared by the insulating sheets 440, 441 but also by the thermal conductive member 453.
  • the insulating sheets 440, 441 are manufactured by a vacuum process so that they do not contain air layers such as voids, but the thermal conductive member 453 is applied at atmospheric pressure. This is because the equipment required to apply the thermal conductive member 453 by a vacuum process or the like would be large.
  • the thermal conductive member 453 is more likely to contain air layers such as voids than the insulating sheets 440, 441.
  • the surface conductor layer 444 of the insulating sheets 440, 441 of the semiconductor device 300 By electrically connecting the surface conductor layer 444 of the insulating sheets 440, 441 of the semiconductor device 300 to the cooling member 340 using the conductive connection portion 460, the surface conductor layer 444 and the cooling member 340 can be set to the same potential in advance. This prevents partial discharge of the heat conductive member 453 and prevents potential fluctuations caused by insulation breakdown of a part of the heat conductive member 453. Furthermore, by using the insulating sheets 440, 441 with the built-in intermediate conductor layer 445, noise generation can be suppressed and the insulation reliability of the insulating sheets 440, 441 can be maintained even when the voltage is increased by voltage sharing.
  • the conductive connection portion 460 electrically connects the surface conductor layer 444 and the cooling member 340 to each other in a region within the projection region 462 of the surface conductor layer 444 and on the outer periphery of the projection region 461 of the adhesive portion of the conductor plates 430, 431, 432, 433 and the resin insulating layer 443.
  • the thermally conductive member 453 is an area that covers at least the projection region 461 of the adhesive portion of the resin insulating layer 443, and is disposed between the surface conductor layer 444 and the cooling member 340.
  • the conductive connection part 460 By arranging the conductive connection part 460 outside the projection area 461 of the adhesive part, deterioration of the insulation of the insulating sheet 440 due to peeling of the insulating sheet 440, etc. is prevented. Details will be described later with reference to FIG. 9(b). Furthermore, because the conductive connection part 460 is arranged outside the projection area 461 of the adhesive part, even if the resin insulating layer 443 in the conductive connection part 460 deteriorates, it does not affect the insulation or heat dissipation. Furthermore, by providing the conductive connection part 460 in the projection area 462 of the surface conductor layer 444, there is no need to provide a separate terminal or the like to connect to the cooling member 340, which has the advantage of excellent productivity of the device.
  • the adhesive portion between the conductor plates 430, 431, 432, 433 and the resin insulating layer 443 is the portion where the conductor plates 430, 431, 432, 433 bonded directly above or directly below the semiconductor elements 155, 156, 157, 158 and the insulating sheets 440, 441 are bonded, and is responsible for both heat dissipation from the semiconductor elements 155, 156, 157, 158 and insulation.
  • the adhesive portion between the conductor plates 430, 431, 432, 433 provided as dummies that are not bonded directly above or directly below the semiconductor elements 155, 156, 157, 158 and the insulating sheets 440, 441 does not correspond to the projection area 461 of this embodiment.
  • a conductive connection portion 460 may be provided in the adhesive portion area corresponding to the dummy in the projection area 462 of the surface conductor layer 444 and in the area on the outer periphery of the projection area 461 of the adhesive portion of the resin insulating layer 443.
  • the conductive connection parts 460 are disposed between the semiconductor device 300 and the cooling member 340, at symmetrical positions on the emitter side and the collector side in the stacking direction of the semiconductor device 300 and the cooling member 340.
  • the conductive connection parts 460 disposed on the emitter side and the conductive connection parts 460 disposed on the collector side are in positions that overlap in the stacking direction of the semiconductor device 300 and the cooling member 340.
  • Fig. 5 is a semi-transparent plan view of the semiconductor device 300.
  • Fig. 6 is a circuit diagram of the semiconductor device 300.
  • the positive terminal 315B is output from the collector side of the upper arm circuit and is connected to the positive side of a battery or a capacitor.
  • the upper arm gate terminal 325U is output from the gate of the active element 155 of the upper arm circuit.
  • the negative terminal 319B is output from the emitter side of the lower arm circuit and is connected to the negative side of a battery or a capacitor, or GND.
  • the lower arm gate terminal 325L is output from the gate of the active element 157 of the lower arm circuit.
  • the AC terminal 320B is output from the collector side of the lower arm circuit and is connected to the motor. When the neutral point is grounded, the lower arm circuit is connected to the negative side of the capacitor instead of GND.
  • the upper arm emitter sense terminal 325E is output from the emitter of the active element 155 of the upper arm circuit, and the lower arm emitter sense terminal 325E is output from the emitter of the active element 157 of the lower arm circuit.
  • the upper arm collector sense terminal 325C is output from the collector of the active element 155 of the upper arm circuit, and the lower arm collector sense terminal 325C is output from the collector of the active element 157 of the lower arm circuit.
  • conductor plates (upper arm circuit emitter side) 430 and conductor plates (upper arm circuit collector side) 431 are arranged above and below active element 155 and diode 156 of the semiconductor element (upper arm circuit).
  • Conductor plates (lower arm circuit emitter side) 432 and conductor plates (lower arm circuit collector side) 433 are arranged above and below active element 157 and diode 158 of the semiconductor element (lower arm circuit).
  • a single insulating sheet covers the projection area 461 of the adhesive portion of the resin insulating layer 443 corresponding to the active element 155 and the diode 156 of the semiconductor element (upper arm circuit) and the projection area 461 of the adhesive portion of the resin insulating layer 443 corresponding to the active element 157 and the diode 158 of the semiconductor element (lower arm circuit).
  • the semiconductor device 300 is formed with a conductive connection portion 460, which is a convex portion.
  • each conductive connection portion 460 is provided in the projection area 462 of the surface conductor layer 444 covered by a single insulating sheet and in the area on the outer periphery of the projection area 461 of the adhesive portion of the resin insulating layer 443.
  • Each conductive connection portion 460 is disposed symmetrically across the projection area 461 of the adhesive portion of the resin insulating layer 443 in a planar direction intersecting the stacking direction of the semiconductor device 300 and the cooling member 240.
  • the semiconductor device 300 of this embodiment has a 2-in-1 structure in which two arm circuits, an upper arm circuit and a lower arm circuit, are integrated into one module.
  • a structure in which multiple upper arm circuits and lower arm circuits are integrated into one module may be used. In this case, the number of output terminals from the semiconductor device 300 can be reduced, making it smaller.
  • FIGS. 7(a), 7(b), 7(c), and 7(d) are cross-sectional views explaining the manufacturing process of semiconductor device 300. As with FIG. 2, these are cross-sectional views of one module taken along line X-X.
  • the collector side of the semiconductor element 155 and the cathode side of the semiconductor element 156 are connected to the second conductor plate 431, and the gate electrode, emitter sense electrode, and collector electrode of the semiconductor element 155 are connected to the gate terminal 325U, emitter sense terminal 325E, and collector sense terminal 325C of the upper arm by wire bonding. Furthermore, the emitter side of the semiconductor element 155 and the anode side of the semiconductor element 156 are connected to the first conductor plate 430 to create the circuit body 310 on the upper arm side.
  • the collector side of the semiconductor element 157 and the cathode side of the semiconductor element 158 are connected to the fourth conductor plate 433, and the gate electrode, emitter sense electrode, and collector electrode of the semiconductor element 157 are connected to the gate terminal 325L, emitter sense terminal 325E, and collector sense terminal 325C of the lower arm by wire bonding.
  • insulating sheets 440, 441 are temporarily attached to conductor plates 430-433. Temporary attachment means that insulating sheets 440, 441 are temporarily attached using the adhesive strength of insulating sheets 440, 441 under conditions that leave room for insulating sheets 440, 441 to harden and adhere in the subsequent transfer molding process.
  • Transfer molding device 601 has spring 602 attached to mold 603. This spring 602 allows a predetermined load to be applied by the force of spring 602 without applying excessive pressure to semiconductor elements 155 to 158 even if the height of circuit body 310 varies.
  • Transfer molding device 601 also has a vacuum degassing mechanism (not shown). By vacuum degassing, even if voids are trapped in sealing material 360 made of resin or the like, the voids can be compressed small, improving insulation. Also, by covering circuit body 310 with a release film (not shown), it is possible to prevent resin burrs from entering the spring drive section, etc.
  • the circuit body 310 with the insulating sheets 440, 441 temporarily attached is set in a mold 603 that has been preheated to a constant temperature of 175°C.
  • a recess 604 is provided in the mold 603. This recess 604 is for forming a protrusion that will become the conductive connection portion 460.
  • the upper and lower molds 603 are clamped.
  • the spring 602 applies pressure to the insulating sheets 440, 441 and the conductor plates 430 to 433, causing them to come into close contact.
  • the sealing material 360 is injected into the mold 603.
  • the molding pressure 456 caused by the injection of the sealing material 360 causes the insulating sheets 440, 441 to deform and conform to the recesses 604 provided in the mold 603, and protrusions that will become the conductive connection parts 460 are formed on the insulating sheets 440, 441.
  • protrusions that will become the conductive connection parts 460 can be easily formed on the sealing material 360.
  • the resin-sealed semiconductor device 300 is then removed from the transfer mold device 601 and post-cured at 175°C for at least two hours.
  • FIG. 8A and 8B are cross-sectional views illustrating a manufacturing process of the electric circuit body 400. This process is carried out using the semiconductor device 300 manufactured by the process shown in FIG. 8A shows the application step.
  • the heat conductive member 453 is applied to the cooling member 340.
  • the application position of the heat conductive member 453 is set to a position that does not overlap with the conductive connection portion 460, thereby preventing the heat conductive member 453 from covering the conductive connection portion 460 when the heat conductive member 453 spreads out.
  • FIG. 8(b) shows the adhesion and curing process.
  • the cooling member 340 coated with the thermally conductive member 453 is pressed against the semiconductor device 300 by the pressure mechanism 341. This brings the conductive connection portion 460 into contact with the cooling member 340, and the surface conductor layers 444 of the insulating sheets 440, 441 and the cooling member 340 are electrically connected to each other.
  • the thermally conductive member 453 is then cured to produce the electrical circuit body 400.
  • FIG. 9(a) is Comparative Example 1
  • FIG. 9(b) is Comparative Example 2, which are enlarged cross-sectional views of the essential parts of electric circuit body 400' taken along line X-X.
  • Comparative Examples 1 and 2 show examples in which the present invention is not applied, in order to help understand the present invention.
  • partial discharge may occur in the void 457 when the potential Vtim is high. This partial discharge may generate noise. Furthermore, repeated partial discharge may cause insulation breakdown in a part of the thermal conductive member 453, resulting in potential fluctuations in which the cooling member 340 and the surface conductor layer 444 have the same potential. As a result, the insulation reliability of the insulating sheets 440 and 441 is reduced.
  • Comparative Example 2 shown in FIG. 9(b) shows an example in which a convex portion 343 is provided on the cooling member 340 within the projection area 461 of the adhesive portion between the conductive plate 420 and the resin insulating layer 443, in comparison with the present embodiment shown in FIG. 2.
  • the convex portion 343 provided on the cooling member 340 is electrically connected to the surface conductor layer 444 of the insulating sheet 440.
  • the convex portion 343 is located opposite the conductor plate 420 with the insulating sheet 440 in between, the pressure force of the pressure mechanism 341 is partially concentrated on the insulating sheet 440 via the convex portion 343 of the cooling member 340.
  • the resin insulating layer 443 of the insulating sheet 440 is composed of a highly heat-conductive filler 447 and a resin binder 448.
  • peeling 448 occurs between the highly heat-conductive filler 447 and the resin binder 448. This peeling 448 reduces the insulation of the insulating sheet 440, which is essential for insulation from the conductor plate 420.
  • the insulating reliability of the insulating sheets 440, 441 can be maintained by arranging the conductive connection portion 460 outside the projection area 461 of the adhesive portion.
  • FIGS. 10(a) and 10(b) show modified example 1 of this embodiment, where FIG. 10(a) is a cross-sectional view corresponding to line X-X of the electric circuit body 400 shown in FIG. 1, and FIG. 10(b) is a cross-sectional view corresponding to line Y-Y of the electric circuit body 400 shown in FIG. 1.
  • the cooling member 340 has a convex portion facing the semiconductor device 300 formed in the projection area 462 of the surface conductor layer 444, in an area on the outer periphery of the projection area 461 of the conductor plates 430, 431 and the resin insulating layer 443.
  • the conductive connection portion 460 electrically connects the cooling member 340 to the surface conductor layer 444 of the insulating sheets 440, 441 through this convex portion.
  • FIGS. 11(a) and 11(b) show modified example 2 of this embodiment, where FIG. 11(a) is a cross-sectional view corresponding to line X-X of the electric circuit body 400 shown in FIG. 1, and FIG. 11(b) is a cross-sectional view corresponding to line Y-Y of the electric circuit body 400 shown in FIG. 1.
  • a conductive member is provided between the semiconductor device 300 and the cooling member 340 in the projection area 462 of the surface conductor layer 444, in the area on the outer periphery of the projection area 461 of the conductor plates 430, 431 and the resin insulating layer 443.
  • the conductive connection portion 460 is formed by electrically connecting the cooling member 340 and the surface conductor layers 444 of the insulating sheets 440, 441 via this conductive member.
  • the conductive member is, for example, a conductive adhesive containing a material such as aluminum, copper, or silver.
  • FIGS. 12(a), 12(b), 12(c), and 12(d) are semi-transparent plan views of a semiconductor device 300 showing variants 3 to 6 of this embodiment.
  • FIG. 12(a) shows variant 3
  • FIG. 12(b) shows variant 4
  • FIG. 12(c) shows variant 5
  • FIG. 12(d) shows variant 6. All of these are simplified versions of the semi-transparent plan view shown in FIG. 5, and the same parts are given the same reference numerals and will be described briefly.
  • the four conductive connection parts 460 are provided in the projection area 462 of the surface conductor layer 444 covered by one insulating sheet, in an area on the outer periphery of the projection area 461 of the adhesive part of the resin insulating layer 443.
  • the projection area 461 of the adhesive part of the resin insulating layer 443 is shown by a dotted line
  • the heat conductive member 453 is shown by a gray fill.
  • the remaining conductive connection part 460 is located in the center sandwiched between the projection areas 461 of the adhesive part of the resin insulating layer 443, and is provided outside the projection area 461 of the adhesive part of the resin insulating layer 443.
  • the conductive connection part 460 includes the examples shown in the first and second modifications.
  • terminals 325E and the like that are connected to the semiconductor element are derived from at least one side surface of the semiconductor device 300, and a thermally conductive member 453 is provided at the shortest distance between the conductive connection portion 460 and the terminal 325E.
  • This thermally conductive member 453 can be applied simultaneously in the application process shown in FIG. 8(a).
  • the conductive connection portion 460 including the examples shown in the first and second modifications, may generate foreign matter (shaved powder) due to friction at the connection point due to repeated thermal cycles. According to the fourth modification, it is possible to prevent the generated foreign matter from adhering to the vicinity of the terminal and causing a short circuit.
  • a resin member 454 is provided at the shortest distance between the conductive connection portion 460 and the terminal 325E.
  • the resin member 454 is made of a different resin material from the heat conduction member 453.
  • the material is not limited to a resin material, and a shielding member that shields the conductive connection portion 460 and the terminal 325E may be used.
  • the type of material for the shielding member does not matter. According to the fifth modification, it is possible to prevent foreign matter generated at the connection portion of the conductive connection portion 460 from adhering to the vicinity of the terminal and causing a short circuit.
  • the thermal conductive member 453 is provided in an area excluding the conductive connection portion 460 and including the area along the shortest distance between the conductive connection portion 460 and the terminal 325E.
  • the thermal conductive member 453 is not applied near the conductive connection portion 460 so that the thermal conductive member 453 does not adhere to the conductive connection portion 460. According to the sixth modification, it is possible to prevent the foreign matter that is generated from adhering to the vicinity of the terminal and causing a short circuit.
  • FIG. 13 is a circuit diagram of a power conversion device 200 using the semiconductor device 300.
  • the power conversion device 200 includes inverter circuit units 140 and 142, an inverter circuit unit 43 for auxiliary equipment, and a capacitor module 500.
  • the inverter circuit units 140 and 142 include a plurality of semiconductor devices 300, which are connected to form a three-phase bridge circuit. When the current capacity is large, the semiconductor devices 300 are further connected in parallel, and these parallel connections are made corresponding to each phase of the three-phase inverter circuit, thereby making it possible to increase the current capacity.
  • the active elements 155 and 157 and the diodes 156 and 158 which are semiconductor elements built into the semiconductor device 300, can also be connected in parallel to make it possible to increase the current capacity.
  • Inverter circuit unit 140 and inverter circuit unit 142 have the same basic circuit configuration, and their control methods and operations are also basically the same.
  • the outline of the circuit operation of inverter circuit unit 140 and the like is well known, so a detailed explanation will be omitted here.
  • the upper arm circuit has an upper arm active element 155 and an upper arm diode 156 as semiconductor elements for switching
  • the lower arm circuit has a lower arm active element 157 and a lower arm diode 158 as semiconductor elements for switching.
  • the active elements 155 and 157 perform switching operations in response to drive signals output from one or the other of the two driver circuits that make up the driver circuit 174, and convert the DC power supplied from the battery 136 into three-phase AC power.
  • the upper arm active element 155 and the lower arm active element 157 each have a collector electrode, an emitter electrode, and a gate electrode.
  • the upper arm diode 156 and the lower arm diode 158 each have two electrodes, a cathode electrode and an anode electrode. As shown in FIG. 6, the cathode electrodes of the diodes 156 and 158 are electrically connected to the collector electrodes of the active elements 155 and 157, and the anode electrodes are electrically connected to the emitter electrodes of the active elements 155 and 157, respectively. This causes the current flow from the emitter electrode of the upper arm active element 155 and the lower arm active element 157 to the collector electrode in the forward direction.
  • the active elements 155 and 157 are, for example, IGBTs.
  • MOSFET metal oxide semiconductor field effect transistor
  • the positive terminal 315B and negative terminal 319B of each upper and lower arm series circuit are each connected to a DC terminal for connecting a capacitor of the capacitor module 500.
  • AC power is generated at the connection between the upper arm circuit and the lower arm circuit, and the connection between the upper arm circuit and the lower arm circuit of each upper and lower arm series circuit is connected to the AC side terminal 320B of each semiconductor device 300.
  • the AC side terminal 320B of each semiconductor device 300 of each phase is each connected to the AC output terminal of the power conversion device 200, and the generated AC power is supplied to the stator winding of the motor generator 192 or 194.
  • the control circuit 172 generates a timing signal for controlling the switching timing of the upper arm active element 155 and the lower arm active element 157 based on input information from the vehicle's control device and sensors (e.g., current sensor 180).
  • the driver circuit 174 generates a drive signal for switching the upper arm active element 155 and the lower arm active element 157 based on the timing signal output from the control circuit 172. Note that 181, 182, and 188 are connectors.
  • the upper and lower arm series circuits include a temperature sensor (not shown), and temperature information about the upper and lower arm series circuits is input to the microcomputer.
  • temperature information about the upper and lower arm series circuits is input to the microcomputer.
  • voltage information about the DC positive pole side of the upper and lower arm series circuits is input to the microcomputer.
  • the microcomputer performs over-temperature and over-voltage detection based on this information, and if over-temperature or over-voltage is detected, it stops the switching operation of all upper arm active elements 155 and lower arm active elements 157, protecting the upper and lower arm series circuits from over-temperature or over-voltage.
  • FIG. 14 is an external perspective view of the power conversion device 200 shown in FIG. 13, and FIG. 15 is a cross-sectional perspective view of the power conversion device 200 shown in FIG. 14 taken along line XV-XV.
  • the power conversion device 200 is provided with a housing 12 formed of a lower case 11 and an upper case 10 and formed in a substantially rectangular parallelepiped shape.
  • An electric circuit body 400, a capacitor module 500, etc. are housed inside the housing 12.
  • the electric circuit body 400 has a cooling flow path that flows to the cooling member 340, and a cooling water inlet pipe 13 and a cooling water outlet pipe 14 that communicate with the cooling flow path protrude from one side of the housing 12.
  • the upper side of the lower case 11 is open, and the upper case 10 is attached to the lower case 11 by closing the opening of the lower case 11.
  • the upper case 10 and the lower case 11 are formed of an aluminum alloy or the like, and are fixed in place while being sealed from the outside.
  • the upper case 10 and the lower case 11 may be integrally formed.
  • a connector 17 is attached to one longitudinal side of the housing 12, and an AC terminal 18 is connected to this connector 17.
  • a connector 21 is provided on the surface from which the cooling water inlet pipe 13 and the cooling water outlet pipe 14 are led out.
  • the electric circuit body 400 is housed in the housing 12.
  • the control circuit 172 and the driver circuit 174 are arranged above the electric circuit body 400, and the capacitor module 500 is housed on the DC terminal side of the electric circuit body 400.
  • the power conversion device 200 can be made thinner, improving the degree of freedom of installation in the vehicle.
  • the AC side terminal 320B of the electric circuit body 400 is connected to the connector 188 through the current sensor 180.
  • the positive side terminal 315B and the negative side terminal 319B which are the DC terminals of the semiconductor device 300, are joined to the positive and negative terminals 362A and 362B of the capacitor module 500, respectively.
  • Electric circuit body 400 includes semiconductor device 300 formed by integrally sealing semiconductor elements 155, 156, 157, 158, conductor plates 430, 431, 432, 433 to which semiconductor elements 155, 156, 157, 158 are joined, and insulating sheets 440, 441 adhered to the heat dissipation surfaces of conductor plates 430, 431, 432, 433 with sealing material 360, cooling member 340 disposed opposite semiconductor device 300 for cooling heat generated by semiconductor elements 155, 156, 157, 158, and a thermally conductive member 453 disposed between insulating sheets 440, 441 and cooling member 340,
  • the insulating sheets 440 and 441 have a resin insulating layer 443 that covers the conductor plates 430, 431, 432, and 433 on one side and is bonded to the heat dissipation surfaces of the conductor plates 430, 431, 432, and 433, and a surface conductor layer 444 that is bonded to the
  • the present invention is not limited to the above-described embodiment, and other forms that are conceivable within the scope of the technical concept of the present invention are also included within the scope of the present invention, so long as they do not impair the characteristics of the present invention.
  • a configuration that combines the above-described embodiment with multiple modified examples may also be used.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Corps de circuit électrique comprenant : un dispositif semi-conducteur dans lequel un élément semi-conducteur, une plaque conductrice à laquelle l'élément semi-conducteur est lié et une feuille isolante collée à une surface de dissipation de chaleur de la plaque conductrice sont étanchéifiés d'un seul tenant avec un matériau d'étanchéité ; un élément de refroidissement qui est placé face au dispositif semi-conducteur et qui refroidit la chaleur générée par l'élément semi-conducteur ; et un élément thermoconducteur placé entre la feuille isolante et l'élément de refroidissement, la feuille isolante possédant une couche isolante en résine qui recouvre la plaque conductrice sur une surface et qui est collée à la surface de dissipation de chaleur de la plaque conductrice, et une couche conductrice de surface qui est collée à l'autre surface de la couche isolante en résine et qui est exposée sur la surface du dispositif semi-conducteur, une partie de connexion électriquement conductrice étant formée qui connecte électriquement la couche conductrice de surface et l'élément de refroidissement l'un à l'autre dans une région qui se trouve à l'intérieur de la région de projection de la couche conductrice de surface et qui est sur le côté périphérique externe de la région adhésive de la plaque conductrice et de la couche isolante en résine.
PCT/JP2023/036929 2022-11-16 2023-10-11 Corps de circuit électrique et dispositif de conversion de puissance WO2024106072A1 (fr)

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JP2022183545A JP2024072609A (ja) 2022-11-16 2022-11-16 電気回路体および電力変換装置
JP2022-183545 2022-11-16

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012004358A (ja) * 2010-06-17 2012-01-05 Denso Corp 半導体モジュール実装構造
JP2012033872A (ja) * 2010-06-30 2012-02-16 Denso Corp 半導体装置
WO2016038955A1 (fr) * 2014-09-09 2016-03-17 日立オートモティブシステムズ株式会社 Module de puissance
JP2021048255A (ja) * 2019-09-18 2021-03-25 日立オートモティブシステムズ株式会社 電気回路体、電力変換装置、および電気回路体の製造方法
WO2021255987A1 (fr) * 2020-06-15 2021-12-23 日立Astemo株式会社 Module de puissance et son procédé de fabrication
JP2022092545A (ja) * 2020-12-10 2022-06-22 日立Astemo株式会社 電気回路体、電力変換装置、および電気回路体の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012004358A (ja) * 2010-06-17 2012-01-05 Denso Corp 半導体モジュール実装構造
JP2012033872A (ja) * 2010-06-30 2012-02-16 Denso Corp 半導体装置
WO2016038955A1 (fr) * 2014-09-09 2016-03-17 日立オートモティブシステムズ株式会社 Module de puissance
JP2021048255A (ja) * 2019-09-18 2021-03-25 日立オートモティブシステムズ株式会社 電気回路体、電力変換装置、および電気回路体の製造方法
WO2021255987A1 (fr) * 2020-06-15 2021-12-23 日立Astemo株式会社 Module de puissance et son procédé de fabrication
JP2022092545A (ja) * 2020-12-10 2022-06-22 日立Astemo株式会社 電気回路体、電力変換装置、および電気回路体の製造方法

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