WO2024085410A1 - Chambre à plasma et procédé de gravure de galette utilisant une chambre à plasma - Google Patents

Chambre à plasma et procédé de gravure de galette utilisant une chambre à plasma Download PDF

Info

Publication number
WO2024085410A1
WO2024085410A1 PCT/KR2023/012525 KR2023012525W WO2024085410A1 WO 2024085410 A1 WO2024085410 A1 WO 2024085410A1 KR 2023012525 W KR2023012525 W KR 2023012525W WO 2024085410 A1 WO2024085410 A1 WO 2024085410A1
Authority
WO
WIPO (PCT)
Prior art keywords
housing
plasma
pressure
plasma chamber
wafer
Prior art date
Application number
PCT/KR2023/012525
Other languages
English (en)
Korean (ko)
Inventor
김남헌
Original Assignee
주식회사 나이스플라즈마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 나이스플라즈마 filed Critical 주식회사 나이스플라즈마
Publication of WO2024085410A1 publication Critical patent/WO2024085410A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present invention relates to a plasma chamber and a wafer etching method using the plasma chamber, and more specifically, to a plasma chamber capable of improving selectivity while maintaining a high etch rate, and to wafer etching using the plasma chamber. It's about method.
  • the semiconductor etching process may be performed inside a plasma chamber.
  • the plasma chamber forms plasma in an internal reaction space, and uses the plasma to perform an etching process for a semiconductor.
  • a plasma source is provided at the top of the plasma chamber to form plasma.
  • plasma sources include a capacitively coupled plasma (CCP) source and an inductively coupled plasma (ICP) source. there is.
  • a capacitively coupled plasma (CCP) source uses an electric field, and can generally etch at a slightly higher pressure than an inductively coupled plasma (ICP) source.
  • Capacitively coupled plasma (CCP) sources have a slow etch rate but are known to have excellent selectivity characteristics and process reproducibility.
  • CCP capacitively coupled plasma
  • ICP Inductively coupled plasma
  • CCP capacitively coupled plasma
  • ICP can increase etch rates at lower pressures than capacitively coupled plasma (CCP) sources, but the plasma density at the center of the wafer is relatively high compared to the plasma density at the edges of the wafer. Although it has a high etch rate, it has the problem of low selectivity and poor process reproducibility.
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • the present invention is intended to solve the above-mentioned problems, and more specifically, relates to a plasma chamber capable of improving selectivity while maintaining a high etch rate, and a wafer etching method using the plasma chamber.
  • the plasma chamber of the present invention to solve the above-mentioned problems is a plasma chamber that forms plasma, and includes a housing provided with a reaction space therein for etching a wafer through plasma; a base plate provided inside the housing and on which the wafer is mounted; and a pressure control unit that adjusts the pressure inside the housing, wherein the pressure control unit adjusts the pressure inside the housing to 50 to 500 mTorr.
  • the plasma chamber of the present invention to solve the above-described problem further includes a plasma source provided on the upper part of the housing and forming plasma inside the housing, and the source power of the plasma source is 500 to 3000 W. You can.
  • the pressure control unit of the plasma chamber of the present invention to solve the above-described problem is equal to the resonance pressure at which the driving frequency of the plasma source and the collision frequency between particles inside the housing are equal, or the resonance pressure is formed to be equal to the driving frequency of the plasma source.
  • the pressure inside the housing can be adjusted to a pressure greater than the pressure.
  • An etching gas is supplied to the inside of the housing of the plasma chamber of the present invention to solve the above-mentioned problems, the etching gas supplied into the housing is discharged to the outside of the housing after reaction, and the etching gas is supplied to the inside of the housing.
  • the residence time may be 1 to 4 seconds.
  • the density of the plasma formed in the reaction space of the housing of the plasma chamber of the present invention to solve the above-described problem may be 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the plasma chamber of the present invention to solve the above-described problem further includes a bias RF source connected to the base plate and capable of applying a bias to the base plate, and the bias power of the bias RF source (Bias power) may be 500 to 5000W.
  • the plasma formed in the reaction space of the housing of the plasma chamber of the present invention to solve the above-mentioned problems includes ions and radicals, and the wafer is etched by the synergy effect of the ions and radicals. It can be.
  • the wafer etching method using a plasma chamber of the present invention to solve the above-described problem includes a housing having a reaction space therein, a housing provided inside the housing, and a space on which the wafer is seated to etch the wafer through plasma.
  • a wafer etching method for etching a wafer through a plasma chamber including a base plate, a pressure regulator for controlling the pressure inside the housing, and a plasma source provided on an upper part of the housing and forming plasma inside the housing, A pressure adjustment step of adjusting the pressure inside the housing to 50 to 500 mTorr through the pressure control unit; A source power adjustment step of adjusting the source power of the plasma source to 500 to 3000 W through the plasma source.
  • the driving frequency of the plasma source and the collision frequency between particles inside the housing are the same through the pressure control unit.
  • the pressure inside the housing can be adjusted to a pressure that is equal to or greater than the resonance pressure that is formed.
  • an etching gas is supplied to the inside of the housing, the etching gas supplied into the housing is discharged to the outside of the housing after reaction, and the etching gas is supplied to the inside of the housing.
  • the time it remains inside the housing may be 1 second to 4 seconds.
  • the density of the plasma formed in the reaction space of the housing may be 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the plasma chamber of the wafer etching method using the plasma chamber of the present invention to solve the above-described problem includes a bias RF source connected to the base plate and capable of applying a bias to the base plate, It may further include a bias power adjustment step of adjusting the bias power of the bias RF source to 500 to 5000 W through the bias RF source.
  • the plasma formed in the reaction space of the housing includes ions and radicals, and the wafer is exposed to a synergy effect of the ions and radicals. effect).
  • the present invention relates to a plasma chamber and a wafer etching method using the plasma chamber.
  • the pressure inside the chamber By setting the pressure inside the chamber to a relatively high pressure compared to a conventional chamber, the wafer can be etched using ions and radicals at the same time. This has the advantage of improving PR selectivity while maintaining a high etch rate.
  • the present invention has the advantage of achieving a high etch rate and high PR selectivity while using lower power in the plasma source and bias RF source than in a conventional chamber.
  • 1 is a diagram showing ions and radicals that etch a wafer.
  • Figure 2 is a diagram showing a plasma chamber according to an embodiment of the present invention.
  • Figure 3 is a diagram showing a wafer etching method using a plasma chamber according to an embodiment of the present invention.
  • Figure 4 is a diagram showing a process area for using ions and radicals according to an embodiment of the present invention.
  • Figure 5 is a diagram showing the change in etching speed according to bias power and pressure when etching a wafer using ions.
  • Figure 6 is a diagram showing the change in etching speed according to bias power and pressure when etching a wafer using ions and radicals according to an embodiment of the present invention.
  • a component When a component is referred to as being "connected or coupled” to another component, the component may be directly connected or coupled to the other component, but there is no connection between the component and the other component. It should be understood that other new components may exist. On the other hand, when a component is said to be “directly connected” or “directly coupled” to another component, it will be understood that no new components exist between the component and the other component. You should be able to.
  • the present invention relates to a plasma chamber and a wafer etching method using a plasma chamber, and to a plasma chamber that can improve selectivity while maintaining a high etch rate and a wafer etching method using a plasma chamber. .
  • plasma is largely composed of electrons, ions (21), and radicals (22). Looking at the conventional method of etching a wafer through plasma, the dominant species is formed as either ions or radicals during the plasma etching process.
  • metal etching mainly uses radicals
  • oxide etching mainly uses ions
  • the dominant species is not formed by either ions or radicals in the plasma etching process, but ions 21 and radicals 22 can be used simultaneously. will be.
  • the ions 21 and radicals 22 act together rather than an ion-dominated reaction or a radical-dominated reaction during the plasma etching process. Therefore, the process area that shows the synergy effect is used.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention utilize the resonance phenomenon that occurs due to collisions between the applied source frequency and particles and the synergy effect of ions and radicals. Selectivity can be improved while maintaining a high etch rate.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention may be an improvement while solving the problems of a method using a conventional inductively coupled plasma (ICP) source.
  • ICP inductively coupled plasma
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention may be SRICP (Synergistic resonance ICP) that uses resonance and synergy effect.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention can adjust the conditions of the plasma chamber to use ions and radicals simultaneously.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention are capable of controlling the pressure inside the chamber, the source power of the plasma source, the plasma density inside the chamber, and the bias power of the bias RF source.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the invention can simultaneously use ions and radicals by changing the above conditions in the plasma chamber.
  • the plasma chamber 100 includes a housing 110, a base plate 111, and a pressure regulator 120.
  • the housing 110 is provided with a reaction space inside in order to etch the wafer 10 through plasma.
  • the housing 110 may be an outer wall of the plasma chamber 100 according to an embodiment of the present invention, and has a space therein. When the wafer 10 is loaded into the housing 110, the wafer 10 may be etched by plasma formed inside the housing 110.
  • the base plate 111 is provided inside the housing 110, and the wafer 10 is seated thereon.
  • the base plate 111 may be provided inside the housing 110 and may be a plate on which the wafer 20 is seated.
  • the base plate 111 may be a wafer chuck that supports the wafer 10 while seating the wafer 10, and the wafer 10 is attached to the base plate 111. Once seated, etching of the wafer 10 can proceed.
  • the pressure regulator 120 controls the pressure inside the housing 110.
  • the pressure control unit 120 may be a pressure control device that adjusts the pressure inside the housing 110, and the pressure control unit 120 includes various configurations as long as it can control the pressure inside the housing 110. It may be a device that does this.
  • the pressure regulator 120 can adjust the pressure inside the housing 110 to 50 to 500 mTorr.
  • the plasma chamber according to an embodiment of the present invention can use ions 21 and radicals 22 at the same time.
  • the plasma chamber according to an embodiment of the present invention is capable of controlling the pressure inside the housing 110 to 50 to 500 mTorr through the pressure control unit 120 in order to simultaneously use ions 21 and radicals 22. will be.
  • the pressure inside the housing 110 is less than 50 mTorr in the plasma chamber according to the embodiment of the present invention, it is difficult to expect a synergy effect using the ions 21 and radicals 22 at the same time.
  • the pressure inside the housing 110 is less than 50 mTorr, an ion 21-dominated etching reaction may occur. Additionally, when using the ions 21 and the radicals 22 simultaneously, if the pressure inside the housing 110 is less than 50 mTorr, there is a risk that the etching rate will be reduced.
  • the reaction time becomes shorter as the reaction between particles increases too much, and the etch rate may actually decrease.
  • the plasma chamber according to an embodiment of the present invention adjusts the pressure inside the housing 110 to 50 to 500 mTorr through the pressure control unit 120.
  • the pressure inside the housing 110 may be adjusted to 100 to 150 mTorr, 200 to 500 mTorr, or 300 to 500 mTorr through the pressure regulator 120.
  • the plasma chamber according to an embodiment of the present invention may further include a plasma source 130 provided on the upper part of the housing 110 and forming plasma inside the housing 110.
  • the plasma source 130 is capable of forming plasma and may include a coil 131 and an RF power generator 132. According to an embodiment of the present invention, the source power of the plasma source 130 may be adjusted to 500 to 3000 W.
  • the etch rate decreases, so the source power formed by the plasma source 130 must be greater than 500W. desirable.
  • the plasma chamber according to the embodiment of the present invention adjusts the pressure inside the housing 110 to 50 to 500 mTorr through the pressure control unit 120, and the pressure inside the housing 110 is lower than the conventional pressure. It can be higher than that of the plasma chamber.
  • the plasma density may become too high due to the relatively high internal pressure of the housing 110. If the plasma density becomes too high, the reaction time may become shorter due to too many reactions between particles, which may actually reduce the etch rate.
  • the source power of the plasma source 130 may be adjusted to 500 to 1500 W.
  • the pressure regulator 120 of the plasma chamber may adjust the pressure inside the housing 110 to a pressure that is equal to or greater than the resonance pressure.
  • the resonance pressure may be a pressure at which the driving frequency of the plasma source 130 and the collision frequency between particles inside the housing 110 are equal.
  • the driving frequency of the plasma source 130 is 13.56 MHz
  • the driving frequency of the plasma source 130 and the collision frequency between particles inside the housing 110 are equal.
  • the resonance pressure may be 52 mTorr in the case of Ar gas
  • the resonance pressure may be 104 mTorr in the case of Ar gas.
  • the pressure regulator 120 according to an embodiment of the present invention is installed inside the housing 110 at a pressure that is equal to or greater than the resonance pressure determined according to the driving frequency of the plasma source 130.
  • the pressure can be adjusted.
  • the collision frequency between particles inside the housing 110 may be determined as the product of the number of particles per unit volume and the rate constant for the collision reaction.
  • the plasma chamber according to an embodiment of the present invention may include a collision frequency analysis unit for analyzing the collision frequency between particles occurring inside the housing 110.
  • a collision frequency analysis unit for analyzing the collision frequency between particles occurring inside the housing 110.
  • a resonance pressure at which the driving frequency of the plasma source 130 and the collision frequency are equal to each other can be derived.
  • the pressure regulator 120 can receive data on the resonance pressure through the collision frequency analysis unit, and through this, the pressure regulator 120 is equal to or equal to the resonance pressure.
  • the pressure inside the housing 110 can be adjusted to a greater pressure.
  • the density of the plasma formed in the reaction space of the housing 110 is preferably 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the target etch rate cannot be obtained.
  • the density of the plasma formed in the reaction space of the housing 110 is greater than 5E11 per cubic centimeter (cm -3 ), the ions 21 and radicals 22 are separated, adversely affecting the selectivity. can be given.
  • the plasma chamber according to an embodiment of the present invention is formed in the reaction space of the housing 110 to improve the selectivity while improving the etching rate by simultaneously using ions 21 and radicals 22.
  • the density of plasma is formed to be 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the density of the plasma formed in the reaction space of the housing 110 may be adjusted by the plasma source 130. Specifically, through the plasma source 130, a plasma density suitable for simultaneous use of ions 21 and radicals 22 can be formed inside the housing 110.
  • the plasma chamber 100 is connected to the base plate 111 and includes a bias RF source (Bias) capable of applying a bias to the base plate 111.
  • RF Source (140) may be further included.
  • the bias RF source 140 can apply a bias to the base plate 111 and apply a bias to the plasma during the etching process.
  • the bias power of the bias RF source 140 is preferably adjusted to 500 to 5000 W.
  • the bias power directly affects the ions 21.
  • bias power of the bias RF source 140 is less than 500W, restrictions occur on the activity of the ions 21, allowing the radicals 22 to dominate, thereby causing the ions 21 and the radicals 22 ) synergy effect cannot be expected.
  • bias power of the bias RF source 140 is greater than 5000W, ions can become dominant and the synergy effect between the ions 21 and radicals 22 cannot be expected.
  • the plasma chamber 100 uses the bias power of the bias RF source 140 to derive a synergy effect through the ions 21 and radicals 22. should be adjusted to 500 to 5000W.
  • Etching gas for etching a wafer may be supplied to the inside of the housing 110 of the plasma chamber 100 according to an embodiment of the present invention.
  • the etching gas supplied into the housing 110 may be discharged to the outside of the housing 110 through a pump or the like after reaction.
  • the time for which the etching gas remains inside the housing 110 may be 1 second to 4 seconds.
  • the time during which the etching gas remains inside the housing 110 may be from the time the etching gas is supplied into the housing 110 to the time it is discharged to the outside of the housing 110.
  • the etching gas does not flow smoothly and thus does not sufficiently react.
  • the time for which the etching gas remains inside the housing 110 is 1 to 4 seconds.
  • the plasma formed in the reaction space of the housing 110 includes ions 21 and radicals 22, and the wafer 10 contains the ions 21 and the radicals. It can be etched by the synergistic effect of (22).
  • the plasma formed in the reaction space of the housing 110 includes electrons, and the electron energy relaxation length (EERL) of the electrons is determined by the diameter of the housing. It can be smaller than
  • the plasma chamber 100 may be performed in the process area of Local Electron Kinetics.
  • the conventional etching process was carried out in the process region of nonlocal electron kinetics, where the electron energy relaxation length (EERL) is always larger than the diameter of the process chamber.
  • EERL electron energy relaxation length
  • the plasma chamber 100 is carried out in the process area of Local Electron Kinetics where the electron energy relaxation length (EERL) is smaller than the diameter of the process chamber (diameter of the housing 110). You can.
  • ERL electron energy relaxation length
  • the plasma chamber 100 can make the plasma density at the edge of the housing 110 higher than the center of the housing 110, and the etch rate can also be increased at the edge of the housing 110. may be higher than the center of the housing 110.
  • a problem may occur where etching is weakly performed at the edge of the wafer (low edge yield problem), but the plasma chamber 100 according to an embodiment of the present invention performs etching at the edge of the housing 110. As the speed is set higher than the center of the housing 110, the above problem can be prevented from occurring.
  • the plasma chamber 100 may not use a separate device because the etch rate at the edge of the housing 110 is higher than the center of the housing 110, and through this, There is an advantage in that production costs can be reduced while yield can be improved.
  • the wafer etching method using a plasma chamber relates to a method of etching a wafer 10 through the plasma chamber 100 according to the above-described embodiment of the present invention.
  • the wafer etching method using a plasma chamber in an embodiment of the present invention includes a pressure adjustment step (S110) and a source power adjustment step (S120).
  • the pressure adjustment step (S110) is a step of adjusting the pressure inside the housing 110 to 50 to 500 mTorr through the pressure adjustment unit 120.
  • the pressure inside the housing 110 is less than 50 mTorr in the plasma chamber according to the embodiment of the present invention, it is difficult to expect a synergy effect using the ions 21 and radicals 22 at the same time.
  • the pressure inside the housing 110 is less than 50 mTorr, an ion 21-dominated etching reaction may occur. Additionally, when using the ions 21 and the radicals 22 simultaneously, if the pressure inside the housing 110 is less than 50 mTorr, there is a risk that the etching rate will be reduced.
  • the reaction time becomes shorter as the reaction between particles increases too much, and the etch rate may actually decrease.
  • the pressure adjustment step (S110) it is preferable to adjust the pressure inside the housing 110 to 50 to 500 mTorr through the pressure adjustment unit 120.
  • the pressure inside the housing 110 is adjusted to 100 to 150 mTorr, 200 to 500 mTorr, and 300 to 500 through the pressure adjustment unit 120. You can also control it with mTorr.
  • the source power adjustment step (S120) is a step of adjusting the source power of the plasma source 130 to 500 to 3000 W through the plasma source 130.
  • the etch rate decreases, so the source power formed by the plasma source 130 is greater than 500W. It is desirable.
  • the pressure inside the housing 110 is adjusted to 50 to 500 mTorr through the pressure control unit 120 in the pressure adjustment step (S110), the pressure inside the housing 110 is lower than that of conventional plasma. It may be higher compared to the chamber.
  • the plasma density may become too high due to the relatively high internal pressure of the housing 110. If the plasma density becomes too high, the reaction time may become shorter due to too many reactions between particles, which may actually reduce the etch rate.
  • the source power adjustment step (S120) it is desirable to adjust the source power of the plasma source 130 to 500 to 3000 W.
  • the pressure inside the housing 110 can be adjusted to a pressure that is equal to or greater than the resonance pressure through the pressure adjustment unit 120.
  • the resonance pressure may be a pressure at which the driving frequency of the plasma source 130 and the collision frequency between particles inside the housing 110 are equal.
  • the driving frequency of the plasma source 130 is 13.56 MHz
  • the driving frequency of the plasma source 130 and the collision frequency between particles inside the housing 110 are equal.
  • the resonance pressure may be 52 mTorr, and if the driving frequency of the plasma source 130 is 27.12 MHz, the resonance pressure may be 104 mTorr.
  • the pressure regulator 120 is equal to or greater than the resonance pressure determined according to the driving frequency of the plasma source 130.
  • the pressure inside the housing 110 can be adjusted by pressure.
  • the collision frequency between particles inside the housing 110 may be determined as the product of the number of particles per unit volume and the rate constant for the collision reaction.
  • the plasma chamber according to an embodiment of the present invention may include a collision frequency analysis unit for analyzing the collision frequency between particles occurring inside the housing 110.
  • a collision frequency analysis unit for analyzing the collision frequency between particles occurring inside the housing 110.
  • a resonance pressure at which the driving frequency of the plasma source 130 and the collision frequency are equal to each other can be derived.
  • the pressure adjustment unit 120 may receive data on the resonance pressure through the collision frequency analysis unit, and through this, the pressure adjustment unit 120 The pressure inside the housing 110 can be adjusted to a pressure that is equal to or greater than the resonance pressure.
  • the density of the plasma formed in the reaction space of the housing 110 is preferably 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the target etch rate cannot be obtained.
  • the density of the plasma formed in the reaction space of the housing 110 is greater than 5E11 per cubic centimeter (cm -3 ), the ions 21 and radicals 22 are separated, adversely affecting the selectivity. can be given.
  • the plasma chamber according to an embodiment of the present invention uses ions 21 and radicals 22 at the same time to improve the etching rate and selectivity, and the plasma chamber is formed in the reaction space of the housing 110.
  • the density of plasma is formed to be 2E11 to 5E11 per cubic centimeter (cm -3 ).
  • the density of the plasma formed in the reaction space of the housing 110 may be adjusted in the source power adjustment step (S120).
  • the source power of the plasma source 130 is adjusted to adjust the density of the plasma formed in the reaction space of the housing 110 to 2E11 to 5E11 per cubic centimeter (cm -3 ). It can be formed as
  • the wafer etching method using a plasma chamber in an embodiment of the present invention involves adjusting the bias power of the bias RF source 140 to 500 to 5000 W through the bias RF source 140.
  • a bias power adjustment step (S130) may be further included.
  • the bias RF source 140 can apply a bias to the base plate 111 and apply a bias to the plasma during the etching process.
  • the bias power may directly affect the ions 21. If the bias power of the bias RF source 140 is less than 500W, restrictions occur on the activity of the ions 21, allowing the radicals 22 to dominate, thereby causing the ions 21 and the radicals 22 ) synergy effect cannot be expected.
  • bias power of the bias RF source 140 is greater than 5000W, ions can become dominant and the synergy effect between the ions 21 and radicals 22 cannot be expected.
  • the bias power of the bias RF source 140 is set to 500 to 5000 W in the bias power adjustment step (S130). It can be adjusted with .
  • Etching gas for etching a wafer may be supplied to the inside of the housing 110 of the plasma chamber 100 according to an embodiment of the present invention.
  • the etching gas supplied into the housing 110 may be discharged to the outside of the housing 110 through a pump or the like after reaction.
  • the time for which the etching gas remains inside the housing 110 may be 1 second to 4 seconds.
  • the time during which the etching gas remains inside the housing 110 may be from the time the etching gas is supplied into the housing 110 to the time it is discharged to the outside of the housing 110.
  • the etching gas does not flow smoothly and thus does not sufficiently react.
  • the time for which the etching gas remains inside the housing 110 is 1 to 4 seconds.
  • the pressure adjustment step (S110), the source power adjustment step (S120), and the bias power adjustment step (S130) of the wafer etching method using a plasma chamber do not need to be performed sequentially, regardless of the order. Each process can proceed.
  • the pressure adjustment step (S110), the source power adjustment step (S120), and the bias power adjustment step (S130) of the wafer etching method using a plasma chamber according to an embodiment of the present invention may be performed simultaneously.
  • the plasma chamber and the wafer etching method using the plasma chamber control the pressure inside the housing 110 through the pressure regulator 120 and the source through the plasma source 130.
  • the power can be adjusted, and the bias power can be adjusted through the bias RF source 140.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention adjust the pressure inside the housing 110, the source power, and the bias power to reduce the resonance pressure effect due to the number of particle collisions and ions ( By simultaneously using 21) and radicals 22, a synergy effect can be generated to improve selectivity while maintaining a high etch rate.
  • the plasma formed in the reaction space of the housing 110 includes ions 21 and radicals 22, and the wafer 10 contains the ions 21 and the radicals. It can be etched by the synergistic effect of (22).
  • the plasma formed in the reaction space of the housing 110 includes electrons, and the electron energy relaxation length (EERL) of the electrons is determined by the diameter of the housing. It can be smaller than
  • the plasma chamber 100 differs from the conventional etching method in which the electron energy relaxation length (EERL) is performed in a process area of nonlocal electron kinetics where the electron energy relaxation length (EERL) is larger than the diameter of the process chamber. It may be carried out in the process area of Local Electron Kinetics, where the relaxation length (EERL, electron energy relaxation length) is smaller than the diameter of the process chamber (diameter of the housing 110).
  • the plasma chamber 100 can make the plasma density at the edge of the housing 110 higher than the center of the housing 110, and the etch rate can also be increased at the edge of the housing 110. may be higher than the center of the housing 110.
  • the plasma chamber 100 has a problem of weak etching at the edge of the wafer as the etch rate at the edge of the housing 110 is higher than the center of the housing 110. edge yield problem) and has the advantage of not using a separate device to solve the above problem.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention are to find a process area where ions 21 and radicals 22 can be used simultaneously and proceed with etching.
  • region A may be a stable plasma regime, a region in which plasma maintains stability that does not change over time.
  • Area B in Figure 4 is an area where too many byproducts are generated, and area C in Figure 4 is an area where the plasma etch profile is distorted. Therefore, areas B and C in FIG. 4 cannot be appropriate process areas.
  • Area D in Figure 4 is an area with a center low etch rate
  • area E in Figure 4 is an area where process results do not change over time and have repeatability.
  • an area that simultaneously satisfies the D and E areas can be a desirable process area.
  • area F of FIG. 4 which is included in area A but does not correspond to areas B and C, and satisfies both D area and E area, can be an appropriate process area.
  • the inside of the housing 110 is used to control the wafer etching process in the F region where ions 21 and radicals 22 can be used simultaneously. Conditions such as pressure, source power, and bias power can be adjusted.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention generate ions 21 and radicals 22 by adjusting the pressure inside the housing 110, the source power, and the bias power.
  • the process area can be formed as an F area that can be used simultaneously, and through this, a synergy effect of the ions (21) and radicals (22) is generated, maintaining a high etch rate while maintaining the selectivity ( selectivity can be improved.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention can maintain a high etch rate by simultaneously using ions 21 and radicals 22.
  • the etching rate tends to decrease as the pressure increases. Ions are independent of temperature and perform mainly at low pressures.
  • the bias power must be improved to increase the etching speed. (Referring to FIG. 5, as the bias power increases, the etch rate may increase.)
  • radicals increase exponentially with temperature, and as pressure increases, the reaction becomes more active, which can increase the etching rate. Therefore, if ions and radicals are used simultaneously as in an embodiment of the present invention, the pressure increases even if the bias power is not increased. By increasing , the etching speed can be improved.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention form the pressure of the housing 110 above the critical point (50 mTorr).
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention form the pressure of the housing 110 to 50 mTorr to 500 mTorr.
  • the dotted line is a graph when the bias power is reduced compared to the solid line. Referring to FIG. 6, if the bias power is adjusted to an appropriate size, a high etching rate can be obtained at a pressure above the critical point.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention can set the bias power to 500 to 5000 W and the source power to 500 to 3000 W.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention generate a synergy effect between ions and radicals to form a pressure that can improve the etching speed, and generate bias power and source power.
  • By adjusting it is possible to implement a process area with an optimal etch rate.
  • the plasma chamber may include a control unit that controls the operation of the pressure regulator 120, the plasma source 130, the RF power generator 132, and the bias RF source 140. there is.
  • the pressure control unit 120, the plasma source 130, the RF power generator 132, and the bias RF source 140 are operated through the control unit to control ion 21. ) and the radical 22 can be used simultaneously.
  • the pressure adjustment step (S110), the source power adjustment step (S120), and the bias power adjustment step (S130) of the wafer etching method using a plasma chamber according to an embodiment of the present invention may be performed while being controlled through the controller. there is.
  • the plasma chamber and the wafer etching method using the plasma chamber according to the embodiment of the present invention described above have the following effects.
  • the pressure inside the chamber is set to a relatively high pressure compared to the conventional chamber, so that the wafer can be etched using ions and radicals simultaneously, This has the advantage of improving PR selectivity while maintaining a high etch rate.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention can be carried out in a pressure range (50 to 500 mTorr) where local electron kinetics is applied.
  • the etch rate at the edge can be higher than the center. .
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention have the advantage of preventing deterioration of uniformity at the edge of the wafer.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention are suitable for the HARC (High aspect ratio etch) process, and can obtain a high etch rate and high selectivity at low power in other processes as well.
  • HARC High aspect ratio etch
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention have been described focusing on the etching process, but are not limited thereto.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention may be applied to processes such as deposition, ashing, PR stripping, and doping in addition to the etching process.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention can be applied to an etching process or deposition process that requires an etching speed, but are not limited thereto, and can be applied to a high etching speed or selectivity with low power. Of course, it can be applied to multiple processes that require improvement simultaneously.
  • the plasma chamber and the wafer etching method using the plasma chamber according to an embodiment of the present invention may be used by improving inductively coupled plasma (ICP), but are not limited and may be used for various types of plasma.
  • ICP inductively coupled plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne une chambre à plasma et un procédé de gravure de galette utilisant la chambre à plasma. La chambre à plasma de la présente invention comprend : un boîtier à l'intérieur duquel se trouve un espace de réaction afin de graver une galette par plasma ; une plaque de base qui est disposée à l'intérieur du boîtier et sur laquelle est montée la galette ; et une unité de réglage de pression servant à régler la pression à l'intérieur du boîtier, l'unité de réglage de pression réglant la pression à l'intérieur du boîtier à 50 à 500 mTorr. Le procédé de gravure de galette utilisant la chambre à plasma de la présente invention comprend : une étape de réglage de pression consistant à régler la pression à l'intérieur du boîtier ; et une étape de réglage de puissance de source consistant à régler une source de plasma.
PCT/KR2023/012525 2022-10-21 2023-08-24 Chambre à plasma et procédé de gravure de galette utilisant une chambre à plasma WO2024085410A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0136836 2022-10-21
KR1020220136836A KR20240056321A (ko) 2022-10-21 2022-10-21 플라즈마 챔버 및 플라즈마 챔버를 이용한 웨이퍼 식각 방법

Publications (1)

Publication Number Publication Date
WO2024085410A1 true WO2024085410A1 (fr) 2024-04-25

Family

ID=90737762

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2023/012525 WO2024085410A1 (fr) 2022-10-21 2023-08-24 Chambre à plasma et procédé de gravure de galette utilisant une chambre à plasma

Country Status (2)

Country Link
KR (1) KR20240056321A (fr)
WO (1) WO2024085410A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060006109A (ko) * 2001-01-25 2006-01-18 동경 엘렉트론 주식회사 플라즈마 처리 방법
KR20070097232A (ko) * 2006-03-29 2007-10-04 장근구 반도체 기판 공정 챔버에 사용되는 다중 플라즈마 발생소스
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR20170075887A (ko) * 2015-12-23 2017-07-04 삼성전자주식회사 플라즈마 처리 장치, 그의 플라즈마 처리 방법, 및 플라즈마 식각 방법
KR20200021914A (ko) * 2017-03-31 2020-03-02 더블린 시티 유니버시티 플라즈마를 원격 감지하기 위한 시스템 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060006109A (ko) * 2001-01-25 2006-01-18 동경 엘렉트론 주식회사 플라즈마 처리 방법
KR20070097232A (ko) * 2006-03-29 2007-10-04 장근구 반도체 기판 공정 챔버에 사용되는 다중 플라즈마 발생소스
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR20170075887A (ko) * 2015-12-23 2017-07-04 삼성전자주식회사 플라즈마 처리 장치, 그의 플라즈마 처리 방법, 및 플라즈마 식각 방법
KR20200021914A (ko) * 2017-03-31 2020-03-02 더블린 시티 유니버시티 플라즈마를 원격 감지하기 위한 시스템 및 방법

Also Published As

Publication number Publication date
KR20240056321A (ko) 2024-04-30

Similar Documents

Publication Publication Date Title
US6426477B1 (en) Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate
US6299725B1 (en) Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
US8288286B2 (en) Dry-etching method
US20060032585A1 (en) Plasma processing method and apparatus
KR20120074210A (ko) 플라즈마 처리 장치
WO2017030414A1 (fr) Dispositif et procédé de traitement de substrat
US6306244B1 (en) Apparatus for reducing polymer deposition on substrate support
KR100430189B1 (ko) 플라즈마 에칭 방법
US6878898B2 (en) Method for improving ash rate uniformity in photoresist ashing process equipment
WO2024085410A1 (fr) Chambre à plasma et procédé de gravure de galette utilisant une chambre à plasma
WO2023146076A1 (fr) Chambre à plasma pour la gravure de galette et procédé de gravure de galette utilisant une chambre à plasma
WO2019124736A1 (fr) Appareil à plasma pour le nettoyage à sec d'un substrat semi-conducteur
WO2023085662A1 (fr) Unité de support et appareil de traitement de substrat comprenant celle-ci
WO2023249164A1 (fr) Chambre à plasma présentant une alimentation en gaz latérale à mouvement tourbillonnaire
WO2023080548A1 (fr) Dispositif de traitement de substrat et procédé de traitement de substrat
WO2020235823A1 (fr) Procédé de nettoyage à sec à l'aide de plasma et de vapeur
WO2023239081A1 (fr) Chambre à plasma ayant une alimentation en gaz latérale pour former un mouvement tourbillonnaire
WO2024219650A1 (fr) Appareil de traitement de substrat
WO2024219649A1 (fr) Appareil de traitement de substrat
KR101278013B1 (ko) 플라즈마 점화 압력 감소 방법
WO2023068698A1 (fr) Appareil de traitement de substrat de plasma à couplage capacitif
WO2013032232A9 (fr) Appareil de traitement de substrats, procédé de formation d'un film de carbone amorphe l'utilisant, et procédé de comblement d'un vide dans un dispositif semiconducteur
KR102030470B1 (ko) 기판 처리 장치 및 방법
WO2023090685A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2024112078A1 (fr) Procédé et dispositif de traitement à film mince comprenant une gravure par plasma assistée par protons activée

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23879991

Country of ref document: EP

Kind code of ref document: A1