WO2024084815A1 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
WO2024084815A1
WO2024084815A1 PCT/JP2023/030926 JP2023030926W WO2024084815A1 WO 2024084815 A1 WO2024084815 A1 WO 2024084815A1 JP 2023030926 W JP2023030926 W JP 2023030926W WO 2024084815 A1 WO2024084815 A1 WO 2024084815A1
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Prior art keywords
display device
light
light shield
electrode
shielding body
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PCT/JP2023/030926
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English (en)
French (fr)
Japanese (ja)
Inventor
有一郎 羽生
Original Assignee
ソニーセミコンダクタソリューションズ株式会社
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Application filed by ソニーセミコンダクタソリューションズ株式会社 filed Critical ソニーセミコンダクタソリューションズ株式会社
Priority to CN202380072671.6A priority Critical patent/CN119968593A/zh
Priority to JP2024551278A priority patent/JPWO2024084815A1/ja
Publication of WO2024084815A1 publication Critical patent/WO2024084815A1/ja

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements

Definitions

  • This disclosure relates to a display device.
  • Japanese Patent Application Laid-Open No. 2003-233693 discloses an electro-optical device as a liquid crystal display device.
  • pixels are arranged at the intersections of data lines and scanning lines.
  • the pixels are arranged in a matrix.
  • a pixel comprises a thin film transistor (TFT) and a pixel electrode electrically connected to one of the source/drain regions.
  • a storage capacitor is electrically connected in parallel between one of the source/drain regions and the pixel electrode.
  • a data line is connected to the other source/drain region of the thin film transistor, and a scanning line is connected to the gate electrode.
  • a liquid crystal layer and a counter electrode are disposed on the pixel electrode.
  • the storage capacitor is connected to one of the source/drain regions via a light-shielding portion (light-shielding portion on the pixel electrode side). This improves the light-shielding effect against light incident on the thin film transistor from the connection portion between the storage capacitor and one of the source/drain regions, thereby reducing the generation of photo-leakage current in the thin film transistor.
  • the display device includes a gate electrode, a thin-film transistor having a pair of first and second main electrodes arranged on both sides of the gate electrode in the gate length direction, a storage capacitor arranged in a region overlapping the thin-film transistor and electrically connected to the first main electrode, a first light shield arranged between the first main electrode and the storage capacitor, and between the gate electrode and the first main electrode, for blocking incident light in the gate length direction, and a second light shield arranged between the second main electrode and the storage capacitor, and between the gate electrode and the second main electrode, for blocking incident light in the gate length direction.
  • the display device is the display device according to the first embodiment, further comprising a pair of third and fourth light shields that are arranged on both sides of the gate electrode in the gate width direction and along the thin film transistor to block incident light in the gate width direction.
  • FIG. 1 is a vertical cross-sectional configuration diagram of a pixel of a display device according to a first embodiment of the present disclosure.
  • FIG. 2 is an enlarged cross-sectional view of the pixel shown in FIG.
  • FIG. 3 is a plan view showing the configuration of the pixel shown in FIG.
  • FIG. 4 is a schematic exploded perspective view of the pixel shown in FIGS.
  • FIG. 5 is a cross-sectional view illustrating a first step of the method for manufacturing the display device according to the first embodiment.
  • FIG. 6 is a cross-sectional view of the second process.
  • FIG. 7 is a cross-sectional view of the third process.
  • FIG. 8 is a cross-sectional view of the fourth step.
  • FIG. 1 is a vertical cross-sectional configuration diagram of a pixel of a display device according to a first embodiment of the present disclosure.
  • FIG. 2 is an enlarged cross-sectional view of the pixel shown in FIG.
  • FIG. 3 is a plan view
  • FIG. 9 is a plan view of a pixel of a display device according to a second embodiment of the present disclosure, corresponding to FIG.
  • FIG. 10 is a plan view of a pixel of a display device according to a third embodiment of the present disclosure, corresponding to FIG.
  • FIG. 11 is a plan view illustrating the configuration of a pixel of a display device according to a fourth embodiment of the present disclosure, corresponding to FIG.
  • FIG. 12 is a schematic exploded perspective view of the pixel shown in FIG. 11, corresponding to FIG.
  • FIG. 13 is a plan view of a pixel of a display device according to a fifth embodiment of the present disclosure, corresponding to FIG. 3.
  • FIG. FIG. 14 is a block diagram showing an example of a schematic configuration of a vehicle control system.
  • FIG. 14 is a block diagram showing an example of a schematic configuration of a vehicle control system.
  • FIG. 15 is an explanatory diagram showing an example of the installation positions of the outside-of-vehicle information detection unit and the imaging unit.
  • FIG. 16 is a diagram showing an example of a schematic configuration of an endoscopic surgery system.
  • FIG. 17 is a block diagram showing an example of the functional configuration of the camera head and the CCU.
  • the first embodiment is a first example in which the present technology is applied to a display device.
  • the first embodiment configurations of the display device and pixels, and methods of manufacturing the display device and pixels will be described.
  • Second Embodiment The second embodiment is a second example in which the configuration of the light shielding body is changed in the solid-state imaging device according to the first embodiment.
  • Third Embodiment The third embodiment is a third example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment. 4.
  • the fourth embodiment is a fourth example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment. 5.
  • Fifth Embodiment is a fifth example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment. 6.
  • Application Example to a Mobile Body In this application example, an example in which the present technology is applied to a vehicle control system, which is an example of a mobile body control system, will be described. 7.
  • Application Example to Endoscopic Surgery System This application example describes an example in which the present technology is applied to an endoscopic surgery system. 8.
  • FIG. 1 A display device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 8.
  • FIG. 1 A display device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 8.
  • FIG. 1 A display device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 8.
  • FIG. 1 A display device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 8.
  • the arrow X direction shown in the figure indicates one planar direction of the display device 1 placed on a flat surface for convenience.
  • the arrow Y direction indicates another planar direction perpendicular to the arrow X direction.
  • the arrow Z direction indicates an upward direction perpendicular to the arrow X and arrow Y directions.
  • the arrow X direction, the arrow Y direction, and the arrow Z direction exactly correspond to the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively, of a three-dimensional coordinate system. Note that these directions are shown to facilitate understanding of the description, and are not intended to limit the directions of the present technology.
  • FIG. 1 shows an example of a vertical cross-sectional configuration of the display device 1 and a pixel 10.
  • Fig. 2 shows an example of an enlarged vertical cross-sectional configuration of the pixel 10.
  • Fig. 3 shows an example of a planar configuration of the pixel 10 shown in Fig. 2.
  • Fig. 4 shows an example of a schematic perspective configuration in which the pixel 10 is exploded.
  • the display device 1 is constructed as a liquid crystal display device.
  • the display device 1 is configured based on a substrate 2, and includes pixels 10 arranged on the substrate 2.
  • pixels 10 are disposed at the intersections of scanning signal lines 3 extending in the direction of the arrow Y and video signal lines 81 extending in the direction of the arrow X. Although detailed illustration is omitted, multiple scanning signal lines 3 are arranged at regular intervals in the direction of the arrow X. Multiple video signal lines 81 are arranged at regular intervals in the direction of the arrow Y. In other words, multiple pixels 10 are arranged in both the directions of the arrow X and the arrow Y.
  • the pixel 10 includes a thin film transistor (TFT) 5, a storage capacitor 6, and a liquid crystal section 9.
  • the liquid crystal section 9 includes a pixel electrode 91, a liquid crystal alignment film 92, a liquid crystal layer 93, a liquid crystal alignment film 94, and a common pixel electrode 95 as main components.
  • an optical lens 11 is disposed in the pixel 10.
  • a counter substrate 12 is disposed on the side of the optical lens 11 opposite to the pixel 10. Each component will be described in detail below.
  • a light-transmitting substrate is used as the substrate 2.
  • a quartz substrate is used as the substrate 2.
  • the scanning signal line 3 is disposed on the surface of the substrate 2 in the direction of the arrow Z with an insulator (not shown) interposed therebetween. As shown in Fig. 3 and Fig. 4, the scanning signal line 3 extends in the direction of the arrow Y, but in the region overlapping the thin film transistor 5 when viewed from the direction of the arrow Z (hereinafter simply referred to as "in a plan view"), the line width of the scanning signal line 3 is expanded in the direction of the arrow X.
  • the line width of the scanning signal line 3 is approximately the same as the dimension between the connection portion between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6 and the connection portion between the second main electrode 521 and the contact wiring 7 (video signal line 81). In the region overlapping the thin film transistor 5, the scanning signal line 3 is used as a back surface light shield.
  • the scanning signal line 3 is formed of a conductive material that is conductive and has light-shielding properties.
  • the scanning signal line 3 is formed of a metal material such as tungsten silicide (WSi) or tungsten (W).
  • WSi tungsten silicide
  • W tungsten
  • the thickness of the scanning signal line 3 is, for example, 100 nm or more and 200 nm or less.
  • the thin film transistor 5 is disposed on the opposite side of the scanning signal line 3 from the substrate 2, with an insulator (not shown) interposed therebetween.
  • the thin film transistor 5 includes a gate electrode 54, and a pair of a first main electrode 511 and a second main electrode 521 disposed on both sides of the gate electrode 54 in the gate length Lg direction.
  • the first main electrode 511 and the second main electrode 521 are formed on the semiconductor layer 51 .
  • the semiconductor layer 51 has its longitudinal direction in the direction of the arrow X and its transverse direction in the direction of the arrow Y, and is disposed across a region in which the line width of the scanning signal line 3 is expanded. That is, the semiconductor layer 51 is formed in a rectangular shape that is long in the direction of the arrow X in a plan view.
  • the semiconductor layer 51 is made of, for example, polycrystalline silicon (Si), and has a thickness of, for example, 20 nm to 100 nm.
  • the first main electrode 511 and the second main electrode 521 are disposed in the semiconductor layer 51 and are formed of an n-type semiconductor region having a high impurity density.
  • the region of the first main electrode 511 formed of an n-type semiconductor region having a high impurity density corresponds to the "second region" of the present technology, which is connected to the storage capacitor 6 described below at a low resistance value.
  • the region of the second main electrode 521 formed of an n-type semiconductor region having a high impurity density corresponds to the "second region" of the present technology, which is connected to the video signal line 81 at a low resistance value.
  • a low impurity density region (LDD: Lightly Doped Drain) 512 is disposed in the vicinity of the gate electrode 54 of the first main electrode 511.
  • the low impurity density region 512 is formed to have an impurity density lower than the impurity density of the second region of the first main electrode 511.
  • the low impurity density region 512 corresponds to the "first region” according to the present technology.
  • a low impurity density region 522 is disposed in the vicinity of the gate electrode 54 of the second main electrode 521.
  • the low impurity density region 522 is formed to have an impurity density lower than the impurity density of the second region of the second main electrode 521.
  • the low impurity density region 522 corresponds to the “first region” according to the present technology.
  • the gate electrode 54 overlaps an intermediate portion of the semiconductor layer 51, and is disposed on the opposite side of the semiconductor layer 51 from the substrate 2 with a gate insulating film 53 interposed therebetween.
  • the gate insulating film 53 is formed of one or more insulating materials selected from, for example, silicon oxide (SiO 2 ) and silicon nitride (SiN).
  • an effective portion 5401 of the gate electrode 54 overlapping the semiconductor layer 51 is used as an effective gate electrode of the gate electrode 54.
  • the gate electrode 54 further has integrally formed lead-out portions 5402 and 5403 led out from the effective portion 5401 to both sides in the gate width Wg direction. Each of the lead-out portions 5402 and 5403 extends in the gate length Lg direction.
  • the overall planar shape of the gate electrode 54 including the effective portion 5401, lead-out portion 5402, and lead-out portion 5403 is formed into an H-shape.
  • the gate electrode 54 is formed of, for example, a composite film in which polycrystalline Si and WSi are laminated, and has a thickness of, for example, 100 nm to 200 nm.
  • the gate electrode 54 may be formed of one or more electrode materials including WSi and Si, selected from W, aluminum (Al), copper (Cu), AlSi, AlCu, titanium (Ti), and titanium nitride (TiN).
  • the third light shield 31 is disposed between one of the lead-out portions 5402 of the gate electrode 54 and the scanning signal line 3, and is electrically connected to both the lead-out portion 5402 and the scanning signal line 3.
  • the third light shield 31 is formed in a rectangular parallelepiped shape having a surface whose longitudinal direction is the gate length Lg direction and whose transverse direction is the gate width direction Wg.
  • the third light shield 31 is formed as a light shield that effectively suppresses or prevents incident light from entering the thin film transistor 5 from the gate width Wg direction, and is further formed as a connection that electrically connects the gate electrode 54 of the thin film transistor 5 and the scanning signal line 3.
  • the fourth light shielding body 32 is disposed between the other lead-out portion 5403 of the gate electrode 54 and the scanning signal line 3, and is electrically connected to each of the lead-out portion 5403 and the scanning signal line 3. Similar to the third light shielding body 31, the fourth light shielding body 32 is formed in a rectangular parallelepiped shape.
  • the fourth light shield 32 is formed as a light shield that effectively suppresses or prevents incident light from entering the thin-film transistor 5 from the gate width Wg direction, and is further formed as a connection that electrically connects the gate electrode 54 of the thin-film transistor 5 and the scanning signal line 3.
  • the third light shielding body 31 and the fourth light shielding body 32 are each formed from a conductive material with light shielding properties.
  • WSi is used for the third light shielding body 31 and the fourth light shielding body 32.
  • a storage capacitor 6 is disposed for each pixel 10 on the opposite side of the thin film transistor 5 from the substrate 2.
  • the storage capacitor 6 is formed to have the same shape and size as the region where the line width of the scanning signal line 3 is expanded.
  • the first main electrode 511 of the thin film transistor 5 is electrically connected to the pixel electrode 91.
  • a connection region between the first main electrode 511 and the pixel electrode 91 corresponds to a "first connection portion" according to the present technology.
  • a part of the storage capacitance 6 is connected to the first main electrode 511 which serves as the first connection portion, and the storage capacitance 6 is electrically connected in parallel between the first main electrode 511 and the pixel electrode 91.
  • the storage capacitor 6 has a multi-layer structure in which an electrode 61, a dielectric 62, an electrode 63, a dielectric 64, and an electrode 65 are sequentially stacked in the direction of the arrow Z. Although a connection structure is omitted, each of the electrodes 61 and 65 is connected to a first main electrode 511.
  • the electrode 63 is connected to a fixed power source not shown.
  • Each of the electrodes 61, 63, and 65 is made of, for example, polycrystalline silicon. This polycrystalline silicon is doped with impurities that reduce the resistance value.
  • Each of the electrodes 61, 63, and 65 has a thickness of, for example, 100 nm or more and 200 nm or less.
  • the dielectric 62 and the dielectric 64 are each formed of, for example, SiN. The thickness of each of the dielectric 62 and the dielectric 64 is, for example, not less than 10 nm and not more than 30 nm.
  • a light shield 67 and a light shield 68 that cover at least the storage capacitor 6 are sequentially laminated in the direction of the arrow Z.
  • the light shielding body 67 is made of, for example, WSi and has a thickness of, for example, 40 nm to 100 nm.
  • the light shielding body 68 is made of, for example, WSi and has a thickness of, for example, 100 nm to 200 nm.
  • the aforementioned thin film transistor 5 and storage capacitor 6 are each disposed within an insulator 41, which is shown in a simplified form.
  • the insulator 41 is actually formed of a plurality of insulating layers.
  • the insulator 41 is formed, for example, with SiO2 as the main insulating material.
  • the second main electrode 521 of the thin film transistor 5 is connected to the video signal line 81 via a contact wiring (plug wiring) 7 .
  • the contact wiring 7 is embedded in a contact hole (not shown) formed in the insulator 41.
  • the contact wiring 7 is formed of a composite film in which, for example, Ti, TiN, and W are laminated in this order.
  • the contact wiring 7 may be made of one or more wiring materials selected from the group consisting of Ti, TiN, Al, AlSi, AlCu, Cu, and W.
  • the video signal line 81 is disposed on the insulator 41 and extends on the insulator 41 in the direction of the arrow X.
  • the video signal line 81 is formed of a composite film in which, for example, Ti, TiN, and AlCu are laminated in that order.
  • the thickness of the video signal line 81 is, for example, 400 nm or more and 500 nm or less.
  • the video signal lines 81 may be made of one or more wiring materials selected from the group consisting of Ti, TiN, Al, AlSi, AlCu, Cu, and W.
  • the video signal line 81 is disposed in an insulator 42, which is shown in a simplified form.
  • the insulator 42 is actually formed of a plurality of insulating layers.
  • the insulator 42 is formed, for example, with SiO2 as a main insulating material.
  • a plurality of wirings 82 and wirings 83 are disposed on the video signal lines 81.
  • the wirings 82 and 83 are each formed of the same wiring material as the video signal lines 81, for example.
  • the liquid crystal section 9 is disposed on the side of the insulator 42 opposite the substrate 2.
  • the liquid crystal section 9 is disposed by sequentially stacking a pixel electrode 91, a liquid crystal alignment film 92, a liquid crystal layer 93, a liquid crystal alignment film 94, and a common pixel electrode 95 in the direction of the arrow Z.
  • the pixel electrode 91 is provided for each pixel 10. Although some of the wiring is omitted, the pixel electrode 91 is electrically connected to the first main electrode 511 of the thin-film transistor 5 through the wiring 83.
  • the pixel electrode 91 is made of a transparent electrode material, for example, indium tin oxide (ITO).
  • the liquid crystal alignment film 92 is disposed so as to cover the pixel electrodes 91.
  • the liquid crystal alignment film 92 is formed of, for example, SiO2 .
  • the liquid crystal layer 93 is disposed between the liquid crystal alignment film 92 and an upper liquid crystal alignment film 94.
  • the liquid crystal layer 93 is configured to include liquid crystal molecules.
  • the optical characteristics of the liquid crystal layer 93 change by utilizing the characteristic that the orientation of the liquid crystal molecules changes depending on the voltage applied to the pixel electrodes 91 and the common pixel electrode 95.
  • the liquid crystal alignment film 94 is disposed so as to cover the liquid crystal layer 93.
  • the liquid crystal alignment film 94 is formed of, for example, SiO2 .
  • the common pixel electrode 95 is disposed as an electrode common to a plurality of pixels 10. A fixed potential is supplied to the common pixel electrode 95. A voltage that is periodically changed may also be supplied to the common pixel electrode 95. Like the pixel electrodes 91, the common pixel electrode 95 is formed from a transparent electrode material, for example, ITO.
  • the optical lens 11 is disposed on the opposite side of the liquid crystal portion from the substrate 2, with an insulator 43 interposed therebetween.
  • the insulator 43 is made of, for example, SiO2 .
  • a microlens structure is adopted for the optical lens 11, and the optical lens 11 is disposed for each pixel 10.
  • the optical lens 11 is made of, for example, silicon oxynitride (SiO x N y ).
  • the counter substrate 12 is disposed on the opposite side of the optical lens 11 to the substrate 2.
  • the counter substrate 12 is made of, for example, a quartz substrate.
  • the display device 1 further includes a first light shield 541 and a second light shield 542 in the region of the pixel 10.
  • the first light shield 541 is disposed between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6, and also between the gate electrode 54 and the first main electrode 511.
  • the first light shield 541 is configured to block incident light in the gate length direction from the connection region between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6 toward the gate electrode 54.
  • the second light shield 542 is disposed between the second main electrode 521 and the storage capacitor 6, and also between the gate electrode 54 and the second main electrode 521.
  • the second light shield 542 is configured to block incident light in the gate length direction from the second main electrode 521 side of the thin film transistor 5 (the connection region between the second main electrode 521 and the video signal line 81) toward the gate electrode 54 side.
  • the first light shield 541 is electrically connected to the storage capacitance 6.
  • the storage capacitance 6 is directly and electrically connected to the first main electrode 511 through a connection hole 411 formed in the insulator 41, and is also directly and electrically connected to the first light shield 541 through the same connection hole 411.
  • the connection region between the storage capacitance 6 and the first light shield 541 is shifted toward the gate electrode 54 (in the gate length Lg direction) relative to the connection region between the storage capacitance 6 and the first main electrode 511.
  • the first light shield 541 is not directly connected to the first main electrode 511 , but is connected to the first main electrode 511 via the storage capacitor 6 . Therefore, in addition to the structure in which the storage capacitor 6 is connected to the first main electrode 511 with the first light shield 541 interposed therebetween, a structure in which the storage capacitor 6 is directly connected to the first main electrode 511 is included. That is, the area of the storage capacitor 6 is increased along the stepped shape of the connection hole 411.
  • the second light shield 542 is electrically connected to the storage capacitor 6, similar to the first light shield 541.
  • the storage capacitor 6 is directly and electrically connected to the second light shield 542 through the connection hole 412 formed in the insulator 41.
  • the storage capacitor 6 has a structure in which it is connected to the second light shielding body, and the area of the storage capacitor 6 is further increased along the stepped shape of the connection hole 412 .
  • the first light shielding body 541 and the second light shielding body 542 are each disposed between the third light shielding body 31 and the fourth light shielding body 32 in a plan view.
  • each of the first light shielding body 541 and the second light shielding body 542 is formed in the same conductive layer and made of the same conductive material as the gate electrode 54 of the thin film transistor 5. In other words, each of the first light shielding body 541 and the second light shielding body 542 is formed using the gate electrode 54 of the thin film transistor 5.
  • Fig. 5 to Fig. 8 show an example of process cross sections for explaining each process of the method for manufacturing the display device 1 according to the first embodiment.
  • the substrate 2 is prepared (see FIG. 5). Then, the scanning signal lines 3 are formed on the substrate 2 (see FIG. 5).
  • the thin film transistor 5 includes a pair of a first main electrode 511 and a second main electrode 521 formed on a semiconductor layer 51, a gate insulating film 53 formed on the semiconductor layer 51, and a gate electrode 54 formed on the gate insulating film 53. Furthermore, in the thin film transistor 5, a low impurity density region 512 and a low impurity density region 522 are formed in the semiconductor layer 51.
  • the first light shield 541 and the second light shield 542 are formed in the same process as the process of forming the gate electrode 54 of the thin-film transistor 5.
  • the first light shield 541 and the second light shield 542 are formed in the same conductive layer as the gate electrode 54, and are formed from the same conductive material.
  • connection hole 411 and a connection hole 412 are formed in the insulator 41.
  • the connection hole 411 is formed by removing the insulator 41 in the thickness direction from a region that overlaps with the first main electrode 511 and the first light shield 541 of the thin-film transistor 5.
  • the connection hole 412 is formed by removing the insulator 41 in the thickness direction from a region that overlaps with the second light shield 542. For example, photolithography and etching techniques are used to form the connection holes 411 and 412, respectively.
  • a storage capacitor 6 is formed in the insulator 41.
  • a part of the storage capacitor 6 is connected to the first main electrode 511 and the first light shield 541 through a connection hole 411.
  • the other part of the storage capacitor 6 is connected to the second light shield 542 through a connection hole 412.
  • a light shielding body 67 is formed on the electrode 65 of the storage capacitor 6.
  • a light shield 68 is formed on the storage capacitor 6.
  • the contact wiring 7, the video signal line 81, the wiring 82, the wiring 83, the liquid crystal section 9, the optical lens 11, and the counter substrate 12 are formed in sequence.
  • the display device 1 according to the first embodiment is completed, and the manufacturing method is completed.
  • a display device 1 includes a thin film transistor 5 and a storage capacitor 6.
  • the thin film transistor 5 has a gate electrode 54, and a pair of a first main electrode 511 and a second main electrode 521 disposed on both sides of the gate electrode 54 in the gate length Lg direction.
  • the storage capacitor 6 is disposed in a region overlapping the thin film transistor 5, and is electrically connected to the first main electrode 511.
  • the display device 1 further includes a first light shielding body 541 and a second light shielding body 542 .
  • the first light shield 541 is disposed between the first main electrode 511 and the storage capacitor 6, and is also disposed between the gate electrode 54 and the first main electrode 511.
  • the first light shield 541 blocks incident light in the gate length Lg direction.
  • the second light shield 542 is disposed between the second main electrode 521 and the storage capacitor 6, and is also disposed between the gate electrode 54 and the second main electrode 521.
  • the second light shield 542 blocks incident light in the gate length Lg direction.
  • the display device 1 configured in this manner includes a first light shield 541 on the side of the connection region between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6, and a second light shield 542 on the side of the connection region between the second main electrode 521 and the video signal line 81. This makes it possible to effectively improve the light shielding property against incident light in the gate length Lg direction of the thin film transistor 5.
  • the display device 1 further includes a pair of a third light shield 31 and a fourth light shield 32.
  • the third light shield 31 and the fourth light shield 32 are disposed on both sides of the gate electrode 54 in the gate width Wg direction of the thin film transistor 5, and are disposed along the thin film transistor 5.
  • the third light shield 31 and the fourth light shield 32 block incident light in the gate width Wg direction. Therefore, the thin film transistor 5 can effectively improve the light blocking property against incident light not only in the gate length Lg direction but also in the gate width Wg direction.
  • the scanning signal line 3 is disposed on the opposite side of the storage capacitor 6 of the thin film transistor 5.
  • the third light shield 31 and the fourth light shield 32 are conductive and electrically connect the gate electrode 54 and the scanning signal line 3. Therefore, the third light shielding body 31 and the fourth light shielding body 32 constitute a part of the scanning signal line 3 that connects the scanning signal line 3 and the gate electrode 54 of the thin film transistor 5.
  • the third light shielding body 31 and the fourth light shielding body 32 are constituted by utilizing a part of the scanning signal line 3, the third light shielding body 31 and the fourth light shielding body 32 can be constituted easily.
  • the first light shield 541 is electrically connected to the storage capacitor 6.
  • the field effect from the scanning signal line 3 can be offset in the thin film transistor 5.
  • leakage current can be effectively suppressed or prevented in the thin film transistor 5.
  • the storage capacitance 6 is directly and electrically connected to the first light shield 541 and the first main electrode 511 of the thin film transistor 5.
  • the storage capacitance 6 is connected to the first light shield 541 and also to the first main electrode 511 through a connection hole 411 formed in the insulator 41.
  • the area of the storage capacitance 6 can be increased in the direction of the arrow Z along the stepped shape of the connection hole 411. This makes it possible to improve the capacitance value of the storage capacitance 6.
  • the display device 1 also includes a second light shield 542, as shown in Figs. 1 to 3.
  • the second light shield 542 is electrically connected to the storage capacitance.
  • the storage capacitance 6 is connected to the second light shield 542 through a connection hole 412 formed in the insulator 41. This allows the area of the storage capacitance 6 to be increased in the direction of the arrow Z along the stepped shape of the connection hole 412, thereby further improving the capacitance value of the storage capacitance 6.
  • the first light shielding body 541 and the second light shielding body 542 are both formed in the same conductive layer and made of the same conductive material as the gate electrode 54 of the thin film transistor 5. Therefore, since the first light shielding body 541 and the second light shielding body 542 are formed using the gate electrode 54, the first light shielding body 541 and the second light shielding body 542 can be easily formed.
  • the first light shielding body 541 and the second light shielding body 542 are both formed in the same process as the process of forming the gate electrode 54 of the thin film transistor 5. Therefore, no new process is added to the formation of the first light shielding body 541 and the second light shielding body 542, and as a result, the number of manufacturing processes can be reduced.
  • the gate electrode 54 of the thin film transistor 5 is formed from one or more electrode materials selected from WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN.
  • the use of these electrode materials can provide light blocking properties, so the first light blocking body 541 and the second light blocking body 542 can be easily constructed using the gate electrode 54.
  • the first light shielding body 541 and the second light shielding body 542 are each disposed between the third light shielding body 31 and the fourth light shielding body 32. Therefore, the first light shielding body 541 and the second light shielding body 542 can be easily constructed with a simple structure.
  • a pixel electrode 91, a liquid crystal layer 93, and a common pixel electrode 95 are sequentially arranged on the side of the storage capacitor 6 opposite the thin film transistor 5. This makes it possible to construct a liquid crystal display device that can achieve the above-mentioned effects.
  • Second embodiment> A display device 1 according to a second embodiment of the present disclosure will be described with reference to FIG.
  • components that are the same as or substantially the same as the components of the display device 1 according to the first embodiment are given the same reference numerals, and duplicated explanations are omitted.
  • FIG. 9 shows an example of a planar configuration of the pixel 10 in the display device 1.
  • each of the first light shield 541 and the second light shield 542 is extended toward the gate electrode 54 side.
  • the first light shield 541 extends toward the gate electrode 54 side, and is therefore arranged so as to overlap from the first main electrode 511, which is the second region, to the low impurity density region 512, which is the first region (see FIG. 2).
  • the second light shield 542 extends toward the gate electrode 54 side, and is therefore arranged so as to overlap from the second main electrode 521, which is the second region, to the low impurity density region 522, which is the first region.
  • the scanning signal line 3 acts as a back gate, and a leak current may occur in the low impurity density region 512 due to the electric field effect from the scanning signal line 3.
  • a leak current may occur in the low impurity density region 512 due to the electric field effect from the scanning signal line 3.
  • an electric field effect can be generated from the first light shield 541 against the electric field effect generated from the scanning signal line 3 side, so the electric field effect can be cancelled out. Note that it is sufficient that the structure for cancelling out this electric field effect is adopted at least on the first light shield 541 side.
  • the components other than those described above are the same or substantially the same as the components of the display device 1 according to the first embodiment.
  • a low impurity density region 512 is disposed in a first region near the gate electrode 54 of the first main electrode 511 of the thin film transistor 5.
  • the impurity density of the low impurity density region 512 is lower than the impurity density of a second region connected to the storage capacitance 6 of the first main electrode 511.
  • the first light shield 541 is disposed so as to overlap the low impurity density region 512 (first region). Therefore, in the low impurity density region 512, a field effect can be generated from the first light shield 541, and the field effect from the scanning signal line 3 can be offset. Therefore, in the thin film transistor 5, a leak current can be effectively suppressed or prevented.
  • FIG. 10 shows an example of a planar configuration of a pixel 10 in the display device 1. As shown in FIG. As shown in FIG. 10, in the display device 1 of the third embodiment, the dimensions of the first light shield 541 and the second light shield 542 are expanded in the display device 1 of the first or second embodiment.
  • the dimensions of the first light shield 541 and the second light shield 542 are larger than the dimension between the third light shield 31 and the fourth light shield 32.
  • the dimensions of the third light shield 31 and the fourth light shield 32 in the direction corresponding to the gate length Lg direction are made shorter.
  • the first light shield 541 and the second light shield 542 are arranged to avoid contact between the third light shield 31 and the first light shield 541 and the second light shield 542 and the fourth light shield 32.
  • the components other than those described above are the same or substantially the same as the components of the display device 1 according to the first or second embodiment.
  • the dimensions of the first light shield 541 and the second light shield 542 are larger than the dimension between the third light shield 31 and the fourth light shield 32. Therefore, the light shielding property against incident light can be further effectively improved in the gate length Lg direction of the thin film transistor 5.
  • the sidewall area of each of the connection holes 411 and 412 can be increased by expanding the dimensions of the first light shielding body 541 and the second light shielding body 542. Therefore, the area of the storage capacitor 6 can be further increased along the stepped shape of the connection holes 411 and 412, so that the capacitance value of the storage capacitor 6 can be further improved.
  • FIG. 11 shows an example of a planar configuration of a pixel 10 in the display device 1.
  • Fig. 12 shows an example of a schematic perspective configuration in which the pixel 10 is exploded. As shown in Figures 11 and 12, in the display device 1 of the fourth embodiment, the dimensions of the connection holes 411 and 412 in the display device 1 of the first or second embodiment are expanded.
  • the opening dimension of the connection hole 411 which serves as a connection region between the storage capacitance 6 and the first light shield 541 is larger than the dimension of the first light shield 541.
  • the storage capacitance 6 is formed within the connection hole 411 along the stepped shape of the side surface of the first light shield 541.
  • the opening dimension of the connection hole 412 which serves as a connection region between the storage capacitor 6 and the second light shield 542, is larger than the dimension of the second light shield 542.
  • the storage capacitor 6 is formed within the connection hole 412 along the stepped shape of the side surface of the second light shield 542.
  • the components other than those described above are the same or substantially the same as the components of the display device 1 according to the first or second embodiment.
  • the dimensions of the connection hole 411 are larger than the dimensions of the first light shield 541, and the dimensions of the connection hole 412 are larger than the dimensions of the second light shield 542. This allows the area of the storage capacitor 6 to be further increased, and therefore the capacitance value of the storage capacitor 6 can be further improved.
  • FIG. 13 shows an example of a planar configuration of the pixel 10 in the display device 1.
  • the display device 1 of the fifth embodiment is an application example of the display device 1 of the third embodiment, in which the first light shielding body 541 and the second light shielding body 542 are each divided.
  • the first light shielding body 541 is disposed on both sides of the thin-film transistor 5 in a direction that coincides with the gate width Wg direction.
  • the second light shielding body 542 is disposed on both sides of the thin-film transistor 5 in a direction that coincides with the gate width Wg direction.
  • the components other than those described above are the same or substantially the same as the components of the display device 1 according to the third embodiment.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.
  • FIG. 14 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology disclosed herein can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050.
  • Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (Interface) 12053.
  • the drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 functions as a control device for a drive force generating device for generating the drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force for the vehicle.
  • the body system control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs.
  • the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, tail lamps, brake lamps, turn signals, and fog lamps.
  • radio waves or signals from various switches transmitted from a portable device that replaces a key can be input to the body system control unit 12020.
  • the body system control unit 12020 accepts the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.
  • the outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image capturing unit 12031 is connected to the outside-vehicle information detection unit 12030.
  • the outside-vehicle information detection unit 12030 causes the image capturing unit 12031 to capture images outside the vehicle and receives the captured images.
  • the outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, or characters on the road surface based on the received images.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received.
  • the imaging unit 12031 can output the electrical signal as an image, or as distance measurement information.
  • the light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects information inside the vehicle.
  • a driver state detection unit 12041 that detects the state of the driver is connected.
  • the driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's degree of fatigue or concentration based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.
  • the microcomputer 12051 can calculate control target values for the driving force generating device, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and output control commands to the drive system control unit 12010.
  • the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an Advanced Driver Assistance System (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 can also control the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, thereby performing cooperative control aimed at automatic driving, which allows the vehicle to travel autonomously without relying on the driver's operation.
  • the microcomputer 12051 can also output control commands to the body system control unit 12030 based on information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching high beams to low beams.
  • the audio/image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an on-board display and a head-up display.
  • FIG. 15 shows an example of the installation position of the imaging unit 12031.
  • the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and upper part of the windshield inside the vehicle cabin of the vehicle 12100.
  • the imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100.
  • the imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100.
  • the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin is mainly used to detect leading vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.
  • FIG. 14 shows an example of the imaging ranges of the imaging units 12101 to 12104.
  • Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door.
  • an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple imaging elements, or an imaging element having pixels for detecting phase differences.
  • the microcomputer 12051 can obtain the distance to each solid object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, and can extract as a preceding vehicle, in particular, the closest solid object on the path of the vehicle 12100 that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km/h or faster). Furthermore, the microcomputer 12051 can set the inter-vehicle distance that should be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on the driver's operation.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects, such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, based on the distance information obtained from the imaging units 12101 to 12104, and can use the data to automatically avoid obstacles.
  • the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
  • the microcomputer 12051 determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, it can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by forcibly decelerating or steering the vehicle to avoid a collision via the drive system control unit 12010.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured image of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian.
  • the audio/image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian.
  • the audio/image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
  • the technology according to the present disclosure (the present technology) can be applied to various products.
  • the technology according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 16 is a diagram showing an example of the general configuration of an endoscopic surgery system to which the technology disclosed herein (the present technology) can be applied.
  • an operator (doctor) 11131 is shown using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a patient bed 11133.
  • the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.
  • the endoscope 11100 is composed of a lens barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 at a predetermined length, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.
  • the tip of the tube 11101 has an opening into which an objective lens is fitted.
  • a light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the tube by a light guide extending inside the tube 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132.
  • the endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.
  • An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from the object being observed is focused onto the image sensor by the optical system.
  • the image sensor converts the observation light into an electric signal corresponding to the observation light, i.e., an image signal corresponding to the observed image.
  • the image signal is sent to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
  • CCU Camera Control Unit
  • the CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and controls the overall operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), in order to display an image based on the image signal.
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 under the control of the CCU 11201, displays an image based on the image signal that has been subjected to image processing by the CCU 11201.
  • the light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies illumination light to the endoscope 11100 when photographing the surgical site, etc.
  • a light source such as an LED (light emitting diode)
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • a user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.
  • the treatment tool control device 11205 controls the operation of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc.
  • the insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity in order to ensure a clear field of view for the endoscope 11100 and to ensure a working space for the surgeon.
  • the recorder 11207 is a device capable of recording various types of information related to the surgery.
  • the printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.
  • the light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these.
  • a white light source composed of, for example, an LED, a laser light source, or a combination of these.
  • the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203.
  • the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals.
  • the image sensor of the camera head 11102 may be controlled to acquire images in a time-division manner in synchronization with the timing of the change in the light intensity, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.
  • the light source device 11203 may also be configured to supply light of a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band of light is irradiated compared to the light irradiated during normal observation (i.e., white light), and a specific tissue such as blood vessels on the surface of the mucosa is photographed with high contrast, so-called narrow band imaging is performed.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating excitation light.
  • excitation light is irradiated to body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated to the body tissue to obtain a fluorescent image.
  • the light source device 11203 may be configured to supply narrow band light and/or excitation light corresponding to such special light observation.
  • FIG. 17 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in FIG. 16.
  • the camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • the CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.
  • the lens unit 11401 is an optical system provided at the connection with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401.
  • the lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.
  • the imaging unit 11402 may have one imaging element (a so-called single-plate type) or multiple imaging elements (a so-called multi-plate type).
  • each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these.
  • the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. By performing a 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site.
  • multiple lens units 11401 may be provided corresponding to each imaging element.
  • the imaging unit 11402 does not necessarily have to be provided in the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.
  • the driving unit 11403 is composed of an actuator, and moves the zoom lens and focus lens of the lens unit 11401 a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.
  • the communication unit 11404 is configured with a communication device for transmitting and receiving various information to and from the CCU 11201.
  • the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 also receives control signals for controlling the operation of the camera head 11102 from the CCU 11201, and supplies them to the camera head control unit 11405.
  • the control signals include information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value during imaging, and/or information specifying the magnification and focus of the captured image.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal.
  • the endoscope 11100 is equipped with the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls the operation of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 also transmits to the camera head 11102 a control signal for controlling the operation of the camera head 11102.
  • the image signal and the control signal can be transmitted by electrical communication, optical communication, etc.
  • the image processing unit 11412 performs various image processing operations on the image signal, which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100, and the display of the captured images obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.
  • the control unit 11413 also causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific body parts, bleeding, mist generated when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.
  • various image recognition techniques such as forceps, specific body parts, bleeding, mist generated when the energy treatment tool 11112 is used, etc.
  • the transmission cable 11400 that connects the camera head 11102 and the CCU 11201 is an electrical signal cable that supports electrical signal communication, an optical fiber that supports optical communication, or a composite cable of these.
  • communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.
  • the technology disclosed herein can be applied to the display device 11202.
  • the technology disclosed herein can be applied to the display device 11202.
  • the capacitance value of the storage capacitance can be improved, the number of pixels of the display device 11202 can be increased.
  • present technology is not limited to the above-described embodiment, and various modifications are possible without departing from the spirit and scope of the present technology.
  • display devices according to two or more of the embodiments may be combined.
  • the present technology may also be applied to display devices constructed using organic electroluminescence.
  • a display device includes a thin film transistor and a storage capacitor.
  • the thin film transistor has a gate electrode, and a pair of first and second main electrodes disposed on both sides of the gate electrode in a gate length direction.
  • the storage capacitor is disposed in a region overlapping the thin film transistor and is electrically connected to the first main electrode.
  • the display device further includes a first light shield and a second light shield.
  • the first light shield is disposed between the first main electrode and the storage capacitance, and between the gate electrode and the first main electrode.
  • the first light shield blocks incident light in the gate length direction.
  • the second light shield is disposed between the second main electrode and the storage capacitance, and between the gate electrode and the second main electrode.
  • the second light shield blocks incident light in the gate length direction.
  • a display device configured in this manner can effectively improve the light blocking properties against incident light in the gate length direction of the thin film transistor.
  • a display device includes a pair of third and fourth light shields in the display device according to the first embodiment.
  • the third and fourth light shields are disposed on both sides of the gate electrode in the gate width direction of the thin film transistor and are disposed along the thin film transistor.
  • the third and fourth light shields block incident light in the gate width direction. Therefore, the thin film transistor can effectively improve the light blocking property against incident light not only in the gate length direction but also in the gate width direction.
  • the present technology has the following configuration: According to the present technology having the following configuration, it is possible to provide a display device that can effectively improve the light blocking property against incident light in the gate length direction of a thin film transistor.
  • a thin film transistor having a gate electrode and a pair of a first main electrode and a second main electrode disposed on both sides of the gate electrode in a gate length direction; a storage capacitor disposed in a region overlapping the thin film transistor and electrically connected to the first main electrode; a first light shielding body that is disposed between the first main electrode and the storage capacitor and between the gate electrode and the first main electrode and that blocks incident light in a gate length direction; a second light shield disposed between the second main electrode and the storage capacitance and between the gate electrode and the second main electrode, for blocking incident light in a gate length direction.
  • the display device described in (1) further comprises a pair of third and fourth light shields arranged on both sides of the gate electrode in the gate width direction and arranged along the thin film transistor to block incident light in the gate width direction.
  • a scanning signal line is disposed on the opposite side of the thin film transistor to the storage capacitor;
  • the third light shield and the fourth light shield are conductive and electrically connect the gate electrode and the scanning signal line.
  • an impurity density in a first region of the first main electrode in the vicinity of the gate electrode is formed lower than an impurity density in a second region of the first main electrode connected to the storage capacitance;
  • the second light shield is electrically connected to the storage capacitor.
  • the display device according to any one of (1) to (8), wherein the gate electrode is formed of one or more electrode materials selected from WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN.
  • the first light shielding body and the second light shielding body are each disposed between the third light shielding body and the fourth light shielding body.
  • each of the first light shield and the second light shield is extended toward the gate electrode.
  • the dimensions of the first light shield and the second light shield are greater than the dimension between the third light shield and the fourth light shield in a direction that coincides with a gate width direction.
  • a dimension of a connection region between the storage capacitor and the first light shield in a direction corresponding to a gate width direction is larger than a dimension of the first light shield;
  • the display device according to (2), wherein a dimension of a connection region between the storage capacitor and the second light shielding body in a direction that coincides with a gate width direction is larger than a dimension of the second light shielding body.
  • the first light shield is disposed on a side of the thin film transistor in a direction that coincides with a gate width direction
  • the second light shield is disposed on a side of the thin film transistor in a direction that coincides with a gate width direction.

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140566A (ja) * 2001-10-31 2003-05-16 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
JP2009053479A (ja) * 2007-08-28 2009-03-12 Seiko Epson Corp 電気光学装置及び電子機器
JP2009063955A (ja) * 2007-09-10 2009-03-26 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2018146870A (ja) * 2017-03-08 2018-09-20 セイコーエプソン株式会社 電気光学装置及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140566A (ja) * 2001-10-31 2003-05-16 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
JP2009053479A (ja) * 2007-08-28 2009-03-12 Seiko Epson Corp 電気光学装置及び電子機器
JP2009063955A (ja) * 2007-09-10 2009-03-26 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2018146870A (ja) * 2017-03-08 2018-09-20 セイコーエプソン株式会社 電気光学装置及び電子機器

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