WO2024082397A1 - 一种集成式彩色Micro LED的防串扰结构制造方法 - Google Patents

一种集成式彩色Micro LED的防串扰结构制造方法 Download PDF

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WO2024082397A1
WO2024082397A1 PCT/CN2022/137466 CN2022137466W WO2024082397A1 WO 2024082397 A1 WO2024082397 A1 WO 2024082397A1 CN 2022137466 W CN2022137466 W CN 2022137466W WO 2024082397 A1 WO2024082397 A1 WO 2024082397A1
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micro led
layer
led chip
gallium nitride
type gallium
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PCT/CN2022/137466
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French (fr)
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张帆
张力强
吴永胜
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福建兆元光电有限公司
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Publication of WO2024082397A1 publication Critical patent/WO2024082397A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to the field of semiconductor electronic technology, and in particular to a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED.
  • Integrated Micro LED Since all pixels of integrated Micro LED are integrated on one substrate and no segmentation operations such as cutting are performed, light crosstalk will occur between adjacent pixels, affecting the display effect.
  • Integrated Micro LED generally uses common N-type GaN, and the common N-type design also causes light crosstalk problems in N-type GaN.
  • the existing integrated color Micro LED technology mainly uses integrated blue and purple gallium nitride (GaN) LED chip matrix light source and quantum dot (QD, Quantum Dots) color conversion module stacking.
  • GaN gallium nitride
  • QD Quantum Dots
  • the technical problem to be solved by the present invention is to provide a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED, which can avoid the light crosstalk problem in the LED light path.
  • the technical solution adopted by the present invention is:
  • a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED comprises the following steps:
  • a black glue layer is covered on the side of the integrated Micro LED chip with a common N pole away from the substrate layer, and the black glue layer is etched to expose the electrode of the Micro LED chip to obtain a first Micro LED chip module;
  • a light color conversion module is placed on the transparent conductive layer on the surface of the N-type gallium nitride layer to obtain an anti-crosstalk structure of an integrated color Micro LED.
  • the beneficial effects of the present invention are: covering the side of the integrated Micro LED chip with a common N-pole away from the substrate layer with a black glue layer, etching the black glue layer and exposing the electrode of the Micro LED chip, can prevent optical crosstalk between gallium nitride Mesas; stripping the substrate and isolating the N-type gallium nitride layer of the first Micro LED chip module, can separate the N-type gallium nitride through the black glue layer, and prevent optical crosstalk inside the N-type gallium nitride material of the common N-type chip and optical crosstalk in the substrate part. In this way, the optical crosstalk problem can be avoided in the LED light path.
  • FIG. 1 is a flow chart of a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of an integrated Micro LED chip with a common N-pole according to an embodiment of the present invention
  • FIG3 is a schematic diagram of a black glue layer covering an integrated Micro LED chip with a common N-pole according to an embodiment of the present invention
  • FIG4 is a schematic diagram of etching a black plastic layer according to an embodiment of the present invention.
  • FIG5 is a schematic diagram of a combination of a first Micro LED chip module and a driving substrate according to an embodiment of the present invention
  • FIG6 is a schematic diagram of peeling off the substrate of the first Micro LED chip module according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of etching an N-type gallium nitride layer in a first Micro LED chip module according to an embodiment of the present invention.
  • FIG8 is a schematic diagram of a covering transparent conductive layer according to an embodiment of the present invention.
  • FIG9 is a schematic diagram of a light color conversion module according to an embodiment of the present invention.
  • FIG10 is a schematic diagram of an anti-crosstalk structure of an integrated color Micro LED according to an embodiment of the present invention.
  • an embodiment of the present invention provides a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED, comprising the steps of:
  • a black glue layer is covered on the side of the integrated Micro LED chip with a common N pole away from the substrate layer, and the black glue layer is etched to expose the electrode of the Micro LED chip to obtain a first Micro LED chip module;
  • a light color conversion module is placed on the transparent conductive layer on the surface of the N-type gallium nitride layer to obtain an anti-crosstalk structure of an integrated color Micro LED.
  • the beneficial effects of the present invention are: covering the side of the integrated Micro LED chip with a common N-pole away from the substrate layer with a black glue layer, etching the black glue layer and exposing the electrode of the Micro LED chip, can prevent optical crosstalk between gallium nitride Mesas; stripping the substrate and isolating the N-type gallium nitride layer of the first Micro LED chip module, can separate the N-type gallium nitride through the black glue layer, and prevent optical crosstalk inside the N-type gallium nitride material of the common N-type chip and the optical crosstalk of the substrate part. In this way, the optical crosstalk problem can be avoided in the LED light path.
  • etching the black glue layer to expose the electrodes of the Micro LED chip includes:
  • the black glue layer is etched until the P electrode of the Micro LED chip is exposed.
  • connecting the electrode of the first Micro LED chip module to the driving substrate through a bonding metal includes:
  • the first Micro LED chip module is placed upside down, the electrodes of the first Micro LED chip module are connected to the bonding metal in a one-to-one correspondence, and the bonding metal is connected to the contact points of the driving substrate in a one-to-one correspondence.
  • the first Micro LED chip module is flipped, it is combined with the driving substrate using a metal bonding method, and the bonding metal is used as the connection interface to ensure the reliability of the chip driving connection.
  • the N-type gallium nitride layer separating the first Micro LED chip module includes:
  • the N-type gallium nitride layer is horizontally etched from a side away from the electrode until the black glue layer is exposed.
  • the N-type gallium nitride parts of the chips with a common N pole are connected.
  • the connected parts of the N-type gallium nitride can be etched away, so that the remaining N-type gallium nitride is no longer connected and is separated by a black glue layer in the middle, further preventing optical crosstalk inside the N-type gallium nitride material of the common N-type chip.
  • the method of connecting all the N-type gallium nitride layers and the N-pole of the driving substrate using a transparent conductive layer includes:
  • a transparent conductive layer is evaporated on the outer surfaces of the black glue layer, the etched N-type gallium nitride layer, the insulating colloid, the driving substrate and the N-pole thereof.
  • the method includes:
  • a protective layer is deposited on a side of the light color conversion structure away from the glass, and black light shielding glue is made on the protective layer corresponding to positions between the quantum dots and between the quantum dots and the light exit holes to obtain a light color conversion module.
  • the light color conversion module can only reflect the light segment of the first color; and the light color conversion module and the chip module are completely isolated by black light-shielding glue without leaving any light leakage gaps, thereby preventing optical crosstalk between the quantum dots of the light color conversion module and between the light color conversion module and the chip.
  • the first color is blue
  • the reflector layer includes silicon oxide and titanium oxide, and the reflector layer reflects light of 200-480 nm.
  • the first color is blue
  • the reflector layer reflects light of 200 ⁇ 480nm. Therefore, by stacking simple materials such as silicon oxide and titanium oxide on the light-emitting surface of the quantum dots, a reflective layer that only reflects blue light but not red and green light can be produced.
  • placing a light color conversion module on the transparent conductive layer on the surface of the N-type gallium nitride layer includes:
  • the light color conversion module is placed on the transparent conductive layer, and the position of the quantum dots of the light color conversion module corresponds one-to-one to the position of the N-type gallium nitride of the second Micro LED chip module.
  • the black adhesive layer is a black epoxy adhesive layer.
  • the black adhesive layer uses epoxy adhesive as a base material, which has a shaping ability and is convenient for isolating N-type gallium nitride.
  • the transparent conductive layer is an indium tin oxide layer.
  • the above-mentioned integrated color Micro LED crosstalk prevention structure manufacturing method of the present invention is suitable for preventing the optical crosstalk problem between Mesa, inside the common N-type N-type gallium nitride material, between the substrate layer, between the quantum dots of the QD module, and at the gap between the QD module and the chip combination in the integrated color Micro LED chip.
  • the following is an explanation through a specific implementation method:
  • a method for manufacturing an integrated color Micro LED crosstalk prevention structure includes the following steps:
  • a GaN-based epitaxial wafer is used to manufacture an integrated Micro LED chip with a common N-pole.
  • the Micro LED chip includes a buffer layer 2, an N-type gallium nitride layer 3, and a P-type gallium nitride layer 4 grown sequentially on a substrate layer 1.
  • the N-type gallium nitride layer 3 and the P-type gallium nitride layer 4 are patterned and etched so that the N-type gallium nitride layer 3 is partially connected.
  • a current spreading layer 5 and a P electrode 6 are sequentially grown on the P-type gallium nitride layer 4.
  • a black glue layer 7 with an epoxy base is coated on the entire surface of the integrated Micro LED chip with a common N-pole, and is prepared for etching after leveling.
  • the black glue layer 7 is etched until the P electrode 6 of the Micro LED chip is exposed.
  • ICP etching can be used to selectively etch away the colloid without etching the electrode, so that after a period of etching, the electrode will naturally expose the etched black glue layer 7.
  • the first Micro LED chip module is placed upside down, the electrodes of the first Micro LED chip module are connected to the bonding metal 9 in a one-to-one correspondence, and the bonding metal 9 is connected to the contact points of the driving substrate 8 in a one-to-one correspondence.
  • the first Micro LED chip module and the driving substrate 8 are combined by metal bonding, with the bonding metal 9 serving as the connection interface.
  • the substrate layer 1 is removed by laser lift-off.
  • ICP etching is used to remove the buffer layer 2 and partially etch away the N-type gallium nitride layer 3 . After etching, the remaining N-type gallium nitride layers 3 are no longer connected, and each N-type gallium nitride layer 3 is filled with a black glue layer 7 .
  • a transparent conductive layer 11 is evaporated on the outer surfaces of the black glue layer 7 , the etched N-type gallium nitride layer 3 , the insulating colloid 10 , the driving substrate 8 and the N-pole 12 thereof.
  • the transparent conductive layer 11 is an indium tin oxide layer, and the indium tin oxide layer is coated by sputtering or plasma evaporation (RPD); specifically, after etching, an insulating colloid 10 is filled between the chip module and the driving substrate, and the indium tin oxide material is used to connect the N-type gallium nitride to the N pole 12 of the driving substrate.
  • RPD plasma evaporation
  • the first color is blue
  • the second color is red
  • the third color is blue, that is, a blue light exit hole 17 is reserved, and red quantum dots 15 and green quantum dots 16 are made; wherein the light exit positions corresponding to the red and green quantum dots are protected by a mask and are not etched;
  • the main materials of the reflector layer 14 are silicon oxide and titanium oxide, and the optical principle of the distributed Bragg reflector is used to reflect only the light between 200 and 480 nm, and does not reflect the light between 480 and 800 nm;
  • the light color conversion module and the chip module are combined to obtain an integrated color Micro LED crosstalk prevention structure.
  • the positions of the quantum dots of the light color conversion module correspond to the positions of the N-type gallium nitride of the second Micro LED chip module.
  • this embodiment Compared with the traditional Micro LED structure, this embodiment retains the convenience of integrated processing, while avoiding the problem of optical crosstalk in all light emission and optical paths; it is easy to design and can combine RGB color distribution according to actual needs; it has excellent protection and has good protection for QD (quantum dots) and gallium nitride chips; the chip module processing process is reasonable, utilizing the good shaping performance of epoxy glue and the convenience of doping black.
  • QD quantum dots
  • the present invention provides a method for manufacturing an anti-crosstalk structure of an integrated color Micro LED, which covers a black epoxy adhesive layer on the side of the integrated Micro LED chip with a common N pole away from the substrate layer, etches the black adhesive layer and exposes the electrode of the Micro LED chip, so as to prevent optical crosstalk between gallium nitride Mesas; peels off the substrate and isolates the N-type gallium nitride layer of the first Micro LED chip module, so that the N-type gallium nitride can be separated by the black adhesive layer, and the separated N-type gallium nitride layer is connected to the N pole on the driving substrate using a transparent conductive layer to form a transparent common N electrode, so as to prevent optical crosstalk inside the N-type gallium nitride material of the common N-type chip and optical crosstalk in the substrate part; and realizes color LED through a light color conversion device, wherein a simple material of silicon oxide and titanium oxide is used on the light emitting surface of the quantum dot

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Abstract

本发明公开了一种集成式彩色Micro LED的防串扰结构制造方法，在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀黑色胶材层并露出Micro LED芯片的电极，能够防止氮化镓Mesa之间的光串扰；剥离衬底并隔断第一Micro LED芯片模组的N型氮化镓层，能够使N型氮化镓通过黑色胶材层隔开，防止共N型芯片的N型氮化镓材料内部的光串扰和衬底部分的光串扰。以此方式，能够在LED发光光路上避免光串扰问题。

Description

一种集成式彩色Micro LED的防串扰结构制造方法 技术领域
本发明涉及半导体电子技术领域，特别涉及一种集成式彩色Micro LED的防串扰结构制造方法。
 背景技术
集成式Micro LED由于其全部像素是集成在一个衬底上，且没有进行切割等分割操作，导致其相邻像素之间会出现光串扰的问题，影响显示效果。集成式Micro LED一般使用共N型氮化镓，共N型设计也导致其在N型氮化镓内存在着光串扰问题。
现有的集成式彩色Micro LED技术主要是使用集成式蓝、紫光氮化镓（GaN）LED芯片矩阵光源与量子点（QD，Quantum Dots）颜色转换模组层叠组成，在GaN LED芯片矩阵光源的Mesa之间、共N型的N型GaN材料内部、蓝宝石衬底层等位置都会存在光串扰问题。在QD模组的量子点之间，QD模组与芯片组合的缝隙处，也会存在光串扰问题。
 技术问题
本发明所要解决的技术问题是：提供一种集成式彩色Micro LED的防串扰结构制造方法，能够在LED发光光路上避免光串扰问题。
 技术解决方案
为了解决上述技术问题，本发明采用的技术方案为：
一种集成式彩色Micro LED的防串扰结构制造方法，包括步骤：
在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀所述黑色胶材层并露出所述Micro LED芯片的电极，得到第一Micro LED芯片模组；
将所述第一Micro LED芯片模组的电极通过键合金属与驱动基底连接，去除所述第一Micro LED芯片模组的衬底层，并隔断所述第一Micro LED芯片模组的N型氮化镓层，得到第二Micro LED芯片模组；
在所述第二Micro LED芯片模组和所述驱动基底之间填充绝缘胶体，并使用透明导电层连接所述第二Micro LED芯片模组的所有N型氮化镓和所述驱动基底的N极；
在所述N型氮化镓层表面的透明导电层上放置光色转换模组，得到集成式彩色Micro LED的防串扰结构。
 有益效果
本发明的有益效果在于：在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀黑色胶材层并露出Micro LED芯片的电极，能够防止氮化镓Mesa之间的光串扰；剥离衬底并隔断第一Micro LED芯片模组的N型氮化镓层，能够使N型氮化镓通过黑色胶材层隔开，防止共N型芯片的N型氮化镓材料内部的光串扰和衬底部分的光串扰。以此方式，能够在LED发光光路上避免光串扰问题。
 附图说明
图1为本发明实施例的一种集成式彩色Micro LED的防串扰结构制造方法的流程图；
图2为本发明实施例的共N极的集成式Micro LED芯片的示意图；
图3为本发明实施例的共N极的集成式Micro LED芯片上覆盖黑色胶材层的示意图；
图4为本发明实施例的刻蚀黑色胶材层的示意图；
图5为本发明实施例的第一Micro LED芯片模组与驱动基底组合的示意图；
图6为本发明实施例的第一Micro LED芯片模组剥离衬底的示意图；
图7为本发明实施例的第一Micro LED芯片模组刻蚀N型氮化镓层的示意图；
图8为本发明实施例的覆盖透明导电层的示意图；
图9为本发明实施例的光色转换模组的示意图；
图10为本发明实施例的集成式彩色Micro LED的防串扰结构的示意图；
标号说明：
1、衬底层；2、缓冲层；3、N型氮化镓层；4、P型氮化镓层；5、电流扩展层；6、P电极；7、黑色胶材层；8、驱动基底；9、键合金属；10、绝缘胶体；11、透明导电层；12、N极；13、玻璃；14、反射镜层；15、红色量子点；16、绿色量子点；17、出光孔；18、保护层；19、黑色遮光胶。
 本发明的实施方式
为详细说明本发明的技术内容、所实现目的及效果，以下结合实施方式并配合附图予以说明。
请参照图1，本发明实施例提供了一种集成式彩色Micro LED的防串扰结构制造方法，包括步骤：
在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀所述黑色胶材层并露出所述Micro LED芯片的电极，得到第一Micro LED芯片模组；
将所述第一Micro LED芯片模组的电极通过键合金属与驱动基底连接，去除所述第一Micro LED芯片模组的衬底层，并隔断所述第一Micro LED芯片模组的N型氮化镓层，得到第二Micro LED芯片模组；
在所述第二Micro LED芯片模组和所述驱动基底之间填充绝缘胶体，并使用透明导电层连接所述第二Micro LED芯片模组的所有N型氮化镓和所述驱动基底的N极；
在所述N型氮化镓层表面的透明导电层上放置光色转换模组，得到集成式彩色Micro LED的防串扰结构。
从上述描述可知，本发明的有益效果在于：在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀黑色胶材层并露出Micro LED芯片的电极，能够防止氮化镓Mesa之间的光串扰；剥离衬底并隔断第一Micro LED芯片模组的N型氮化镓层，能够使N型氮化镓通过黑色胶材层隔开，防止共N型芯片的N型氮化镓材料内部的光串扰和衬底部分的光串扰。以此方式，能够在LED发光光路上避免光串扰问题。
进一步地，刻蚀所述黑色胶材层并露出所述Micro LED芯片的电极包括：
对所述黑色胶材层进行刻蚀，直至露出所述Micro LED芯片的P电极。
由上述描述可知，选择性地只刻蚀掉黑色胶材层而不会刻蚀到P电极，这样经过一段时间刻蚀后P电极会自然露出，制造过程可靠性高。
进一步地，将所述第一Micro LED芯片模组的电极通过键合金属与驱动基底连接包括：
将所述第一Micro LED芯片模组倒装放置，所述第一Micro LED芯片模组的电极与键合金属一一对应连接，所述键合金属与驱动基底的接触点一一对应连接。
由上述描述可知，第一Micro LED芯片模组倒装后使用金属键合方式与驱动基底组合，以键合金属作为连接界面，保证芯片驱动连接的可靠性。
进一步地，隔断所述第一Micro LED芯片模组的N型氮化镓层包括：
从远离电极的一面开始水平刻蚀N型氮化镓层，直至露出所述黑色胶材层。
由上述描述可知，共N极的芯片，其N型氮化镓部分相连，通过水平刻蚀N型氮化镓层，能够刻蚀掉N型氮化镓的相连部分，使得剩余的N型氮化镓不再相连且中间有黑色胶材层隔开，进一步防止共N型芯片的N型氮化镓材料内部的光串扰。
进一步地，所述使用透明导电层连接所有所述N型氮化镓层和所述驱动基底的N极包括：
在所述黑色胶材层、刻蚀后的N型氮化镓层、所述绝缘胶体、驱动基底及其N极的外表面蒸镀透明导电层。
由上述描述可知，在芯片模组和驱动基板的表面蒸镀透明导电层，能够得到共N型透明电极，实现共N极的导电。
进一步地，在所述N型氮化镓层表面的透明导电层上放置光色转换模组之前包括：
在玻璃上按照量子点位置刻蚀凹槽，并在所述凹槽的表面制作反射镜层；
在所述反射镜层上对应第一凹槽的位置刻蚀第一颜色的出光孔，并在所述反射镜层上对应第二凹槽和第三凹槽的分别设置第二颜色和第三颜色的量子点，得到光色转换结构；
在所述光色转换结构远离所述玻璃的一面沉积保护层，并在所述保护层上对应所述量子点之间的位置以及所述量子点与所述出光孔之间的位置制作黑色遮光胶，得到光色转换模组。
由上述描述可知，在玻璃基材上预制选择性反射镜层，并设置第一颜色的出光孔、第二颜色和第三颜色的量子点，能够使得光色转换模组只反射第一颜色的光段；且光色转换模组与芯片模组之间完全由黑色遮光胶隔离，不留漏光缝隙，防止光色转换模组的量子点之间以及光色转换模组与芯片之间的光串扰。
进一步地，所述第一颜色为蓝色；
所述反射镜层包括氧化硅和氧化钛，所述反射镜层反射200~480nm的光。
由上述描述可知，第一颜色为蓝色，且反射镜层反射200~480nm的光，因此在量子点的出光面使用氧化硅和氧化钛简单材料叠加能够制作出只反射蓝光不反射红绿光的反射层。
进一步地，在所述N型氮化镓层表面的透明导电层上放置光色转换模组包括：
将所述光色转换模组放置在透明导电层上，所述光色转换模组的量子点的位置与所述第二Micro LED芯片模组的N型氮化镓的位置一一对应。
由上述描述可知，将光色转换模组与芯片模组组合，可得到集成式彩色Micro LED防串扰结构。
进一步地，所述黑色胶材层为黑色环氧胶材层。
由上述描述可知，黑色胶材层使用环氧胶作为基材，具备定型能力，便于对N型氮化镓进行隔断。
进一步地，所述透明导电层为氧化铟锡层。
本发明上述的一种集成式彩色Micro LED的防串扰结构制造方法，适用于在集成式彩色Micro LED的芯片中，防止Mesa之间、共N型的N型氮化镓材料内部、衬底层、QD模组的量子点之间，QD模组与芯片组合的缝隙处的光串扰问题，以下通过具体的实施方式进行说明：
实施例一
请参照图1，一种集成式彩色Micro LED的防串扰结构制造方法，包括步骤：
S1、在共N极的集成式Micro LED芯片远离衬底层1的一面覆盖黑色胶材层7，刻蚀所述黑色胶材层7并露出所述Micro LED芯片的电极，得到第一Micro LED芯片模组。
S11、请参照图2，使用GaN基外延片制作共N极的集成式Micro LED芯片，Micro LED芯片包括在衬底层1上依次生长的缓冲层2、N型氮化镓层3和P型氮化镓层4，图形化刻蚀N型氮化镓层3和P型氮化镓层4，使得N型氮化镓层3部分相连；P型氮化镓层4上依次生长有电流扩展层5和P电极6。
S12、请参照图3，在共N极的集成式Micro LED芯片上整面涂布环氧基底的黑色胶材层7，流平后准备刻蚀。
S13、请参照图4，对黑色胶材层7进行刻蚀，直至露出Micro LED芯片的P电极6；在本实施例中，利用ICP刻蚀，可以选择性地只刻蚀掉胶体而不会刻蚀到电极，这样经过一段时间刻蚀后电极会自然露出刻蚀后的黑色胶材层7。
S2、将所述第一Micro LED芯片模组的电极通过键合金属9与驱动基底8连接，去除所述第一Micro LED芯片模组的衬底层1，并隔断所述第一Micro LED芯片模组的N型氮化镓层3，得到第二Micro LED芯片模组。
S21、请参照图5，将第一Micro LED芯片模组倒装放置，第一Micro LED芯片模组的电极与键合金属9一一对应连接，键合金属9与驱动基底8的接触点一一对应连接。
在本实施例中，使用金属键合方式组合第一Micro LED芯片模组和驱动基底8，以键合金属9作为连接界面。
S22、请参照图6，使用激光剥离的方式去除衬底层1。
S23、请参照图7，从远离电极的一面开始水平刻蚀N型氮化镓层3，直至露出所述黑色胶材层7。
具体的，使用ICP刻蚀去除缓冲层2，并刻蚀掉部分N型氮化镓层3，刻蚀后剩余的N型氮化镓层3已经不是相连的，且各N型氮化镓层3中间有黑色胶材层7填充。
S3、在所述第二Micro LED芯片模组和所述驱动基底8之间填充绝缘胶体10，并使用透明导电层11连接所述第二Micro LED芯片模组的所有N型氮化镓和所述驱动基底8的N极12。
具体的，请参照图8，在黑色胶材层7、刻蚀后的N型氮化镓层3、绝缘胶体10、驱动基底8及其N极12的外表面蒸镀透明导电层11。
在本实施例中，透明导电层11为氧化铟锡层，氧化铟锡层使用溅射或等离子蒸镀（RPD）方式镀膜；具体的，刻蚀后在芯片模组与驱动基板之间填充绝缘胶体10，使用氧化铟锡材料将N型氮化镓与驱动基板的N极12相连。
S4、在所述N型氮化镓层3表面的透明导电层11上放置光色转换模组，得到集成式彩色Micro LED的防串扰结构。
S41、请参照图9，制作光色转换模组：
S411、在玻璃13上按照量子点位置刻蚀凹槽，并在所述凹槽的表面制作反射镜层14，凹槽深度为500~5000um；
S412、在所述反射镜层14上对应第一凹槽的位置刻蚀第一颜色的出光孔17，并在所述反射镜层14上对应第二凹槽和第三凹槽的分别设置第二颜色和第三颜色的量子点，得到光色转换结构；
本实施例中第一颜色为蓝色，第二颜色为红色、第三颜色为蓝色，即预留出蓝色出光孔17，并制作红色量子点15和绿色量子点16；其中红绿色量子点对应的出光位置有掩膜保护，不进行刻蚀；
反射镜层14的主体材料是氧化硅和氧化钛，利用分布式布拉格反射镜的光学原理只反射200~480nm之间的光，不反射480~800nm光线；
S413、在所述光色转换结构远离所述玻璃13的一面使用ALD（原子层沉积）沉积方式沉积耐温耐湿耐腐蚀的保护层18，并在所述保护层18上对应所述量子点之间的位置以及所述量子点与所述出光孔17之间的位置光刻制作黑色遮光胶19，得到光色转换模组。
S42、请参照图10，将上述制作完成的光色转换模组与芯片模组组合，得到集成式彩色Micro LED防串扰结构。其中，光色转换模组的量子点的位置与所述第二Micro LED芯片模组的N型氮化镓的位置一一对应。
相较于传统的Micro LED结构，本实施例保留了集成式加工的便利性，同时在所有发光及光路上都避免了光串扰问题；设计方便，可根据实际需要组合RGB颜色分布；具备极佳的保护性，对QD（量子点）及氮化镓芯片都有良好的保护；芯片模组加工过程合理，利用了环氧胶的良好定型性能及掺杂黑色的便利性。
综上所述，本发明提供的一种集成式彩色Micro LED的防串扰结构制造方法，在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色环氧胶材层，刻蚀黑色胶材层并露出Micro LED芯片的电极，能够防止氮化镓Mesa之间的光串扰；剥离衬底并隔断第一Micro LED芯片模组的N型氮化镓层，能够使N型氮化镓通过黑色胶材层隔开，隔开后的N型氮化镓层使用透明导电层与驱动基板上的N极连接，形成透明共N电极，防止共N型芯片的N型氮化镓材料内部的光串扰和衬底部分的光串扰；并且通过光色装换装置实现彩色LED，其中在量子点的出光面使用氧化硅和氧化钛简单材料叠加制作出只反射蓝光不反射红绿光的反射层。以此方式，能够在LED发光光路上避免光串扰问题。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等同变换，或直接或间接运用在相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

  1. 一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，包括步骤：
    在共N极的集成式Micro LED芯片远离衬底层的一面覆盖黑色胶材层，刻蚀所述黑色胶材层并露出所述Micro LED芯片的电极，得到第一Micro LED芯片模组；
    将所述第一Micro LED芯片模组的电极通过键合金属与驱动基底连接，去除所述第一Micro LED芯片模组的衬底层，并隔断所述第一Micro LED芯片模组的N型氮化镓层，得到第二Micro LED芯片模组；
    在所述第二Micro LED芯片模组和所述驱动基底之间填充绝缘胶体，并使用透明导电层连接所述第二Micro LED芯片模组的所有N型氮化镓和所述驱动基底的N极；
    在所述N型氮化镓层表面的透明导电层上放置光色转换模组，得到集成式彩色Micro LED的防串扰结构。
  2. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，刻蚀所述黑色胶材层并露出所述Micro LED芯片的电极包括：
    对所述黑色胶材层进行刻蚀，直至露出所述Micro LED芯片的P电极。
  3. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，将所述第一Micro LED芯片模组的电极通过键合金属与驱动基底连接包括：
    将所述第一Micro LED芯片模组倒装放置，所述第一Micro LED芯片模组的电极与键合金属一一对应连接，所述键合金属与驱动基底的接触点一一对应连接。
  4. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，隔断所述第一Micro LED芯片模组的N型氮化镓层包括：
    从远离电极的一面开始水平刻蚀N型氮化镓层，直至露出所述黑色胶材层。
  5. 根据权利要求4所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，所述使用透明导电层连接所有所述N型氮化镓层和所述驱动基底的N极包括：
    在所述黑色胶材层、刻蚀后的N型氮化镓层、所述绝缘胶体、驱动基底及其N极的外表面蒸镀透明导电层。
  6. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，在所述N型氮化镓层表面的透明导电层上放置光色转换模组之前包括：
    在玻璃上按照量子点位置刻蚀凹槽，并在所述凹槽的表面制作反射镜层；
    在所述反射镜层上对应第一凹槽的位置刻蚀第一颜色的出光孔，并在所述反射镜层上对应第二凹槽和第三凹槽的分别设置第二颜色和第三颜色的量子点，得到光色转换结构；
    在所述光色转换结构远离所述玻璃的一面沉积保护层，并在所述保护层上对应所述量子点之间的位置以及所述量子点与所述出光孔之间的位置制作黑色遮光胶，得到光色转换模组。
  7. 根据权利要求6所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，所述第一颜色为蓝色；
    所述反射镜层包括氧化硅和氧化钛，所述反射镜层反射200~480nm的光。
  8. 根据权利要求6所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，在所述N型氮化镓层表面的透明导电层上放置光色转换模组包括：
    将所述光色转换模组放置在透明导电层上，所述光色转换模组的量子点的位置与所述第二Micro LED芯片模组的N型氮化镓的位置一一对应。
  9. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，所述黑色胶材层为黑色环氧胶材层。
  10. 根据权利要求1所述的一种集成式彩色Micro LED的防串扰结构制造方法，其特征在于，所述透明导电层为氧化铟锡层。
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