WO2024078260A1 - 射频开关及其控制方法、电子设备 - Google Patents

射频开关及其控制方法、电子设备 Download PDF

Info

Publication number
WO2024078260A1
WO2024078260A1 PCT/CN2023/119145 CN2023119145W WO2024078260A1 WO 2024078260 A1 WO2024078260 A1 WO 2024078260A1 CN 2023119145 W CN2023119145 W CN 2023119145W WO 2024078260 A1 WO2024078260 A1 WO 2024078260A1
Authority
WO
WIPO (PCT)
Prior art keywords
impedance transformation
radio frequency
transformation line
pin diode
switch
Prior art date
Application number
PCT/CN2023/119145
Other languages
English (en)
French (fr)
Inventor
郭海军
吴广德
宋林东
杨云博
卫东
李朋军
Original Assignee
中兴通讯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中兴通讯股份有限公司 filed Critical 中兴通讯股份有限公司
Publication of WO2024078260A1 publication Critical patent/WO2024078260A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Definitions

  • the embodiments of the present application relate to the field of communication technology, and in particular to a radio frequency switch and a control method thereof, and an electronic device.
  • RF switches used in the market: a mechanical switch and an electronic switch.
  • the switching time of a mechanical switch is basically in the hundreds of milliseconds, which is difficult to meet the microsecond switching of the TDD (Time Division Duplexing) time slot of the RRU (Remote Radio Unit) equipment.
  • the switching time of an electronic switch is basically in the 1-2 microsecond level, but it is limited by the PIN tube junction temperature (175°C), and the power capacity is difficult to achieve a high level.
  • the power level that the industry can basically achieve is 40-60W. It is difficult to make further breakthroughs using conventional technical means. Therefore, the RF switch used in the TDD power amplifier has the problems of limited power capacity and insufficient isolation.
  • Embodiments of the present application provide a radio frequency switch, an electronic device, a control method for a radio frequency switch, a control device, and a computer-readable storage medium.
  • an embodiment of the present application provides a radio frequency switch, comprising: an radio frequency signal input terminal, the radio frequency signal input terminal being connected to a first power supply through an radio frequency isolation device; an radio frequency signal output terminal, at least one section of a first impedance transformation line being connected between the radio frequency signal output terminal and the radio frequency signal input terminal; at least one section of the first impedance transformation line, the first impedance transformation line being configured to achieve impedance transformation from short circuit to open circuit, and both ends of the first impedance transformation line being switchably connected to a ground terminal or a second power supply through a first PIN diode and a second PIN diode, respectively, wherein a voltage of the second power supply is higher than a voltage of the first power supply.
  • an embodiment of the present application provides an electronic device, comprising the radio frequency switch as described in the first aspect above.
  • an embodiment of the present application provides a control method for a radio frequency switch, wherein the radio frequency switch includes a radio frequency signal input terminal and a radio frequency signal output terminal, the radio frequency signal input terminal is connected to a first power supply through radio frequency isolation, at least one section of a first impedance transformation line is connected between the radio frequency signal output terminal and the radio frequency signal input terminal, the first impedance transformation line is configured to achieve impedance transformation from short circuit to open circuit, and the two ends of the first impedance transformation line are switchably connected to a ground terminal or a second power supply through a first PIN diode and a second PIN diode, respectively, wherein the voltage of the second power supply is higher than the voltage of the first power supply;
  • the control method includes: switching the two ends of the first impedance transformation line to be connected to the ground terminal through the first PIN diode and the second PIN diode, respectively, so that the radio frequency signal between the first impedance transformation lines is turned off; or, switching the two ends of the
  • an embodiment of the present application provides a control device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the control method described in the third aspect above when executing the computer program.
  • an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer-executable program, and the computer-executable program is used to enable a computer to execute the control method described in the third aspect above.
  • FIG1A is a schematic diagram of the structure of a radio frequency switch provided by an embodiment of the present application.
  • FIG1B is a schematic diagram of the structure of another radio frequency switch provided by an embodiment of the present application.
  • FIG2 is a schematic diagram of the structure of a 1/4*n wavelength radio frequency switch provided by an embodiment of the present application.
  • FIG3 is a schematic diagram of the structure of a high-isolation multi-stage RF switch provided by an embodiment of the present application.
  • FIG4 is a schematic diagram of a TDD power amplifier RF switch circuit connection according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of the structure of a control device provided in one embodiment of the present application.
  • the embodiment of the present application provides a radio frequency switch and a control method thereof, and an electronic device, wherein the radio frequency switch method is applied to the radio frequency switch, the radio frequency switch includes a radio frequency signal input end and a radio frequency signal output end, the radio frequency signal input end is connected to a first power supply through a radio frequency isolation device, at least one first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is configured to achieve impedance transformation from short circuit to open circuit, and the two ends of the first impedance transformation line are respectively connected to the ground end or the second power supply through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than the voltage of the first power supply.
  • the power capacity is increased by connecting the PIN diode in parallel with the impedance transformation line, and the impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the radio frequency switch.
  • the problem that the radio frequency switch currently used in TDD power amplifiers has limited power capacity and insufficient isolation can be solved.
  • the present application can significantly improve the power capacity and isolation of the radio frequency switch, and can further improve the power tolerance and isolation by connecting multiple PIN diodes in parallel and adding impedance transformation lines according to needs.
  • FIG1A is a schematic diagram of the structure of an RF switch provided by an embodiment of the present application.
  • the RF switch includes an envelope RF signal input terminal RFin and an RF signal output terminal RFout, and the RF signal input terminal RFin is connected to a first power supply V1 through an RF isolation device, wherein the RF isolation device may include but is not limited to an impedance transformation line and an RF inductor.
  • At least one section of a first impedance transformation line Z1 is connected between the RF signal output terminal RFout and the RF signal input terminal RFin, and the first impedance transformation line Z1 is configured to achieve impedance transformation from short circuit to open circuit, and the two ends A and B of the first impedance transformation line Z1 are respectively switchably connected to the ground terminal GND or the second power supply V2 through a first PIN diode D1 and a second PIN diode D2, wherein the voltage of the second power supply V2 is higher than the voltage of the first power supply V1.
  • the voltage of the first power supply V1 is higher than the ground terminal GND, and the working state of the first PIN diode D1 and the second PIN diode D2 is the on state.
  • the first impedance transformation line Z1 forms an impedance transformation from short circuit to open circuit due to being short-circuited, so the RF signal between the first impedance transformation line Z1 is turned off; when the two ends A and B of the first impedance transformation line Z1 are connected to the second power supply through the first PIN diode D1 and the second PIN diode D2 respectively, the voltage of the first power supply V1 is lower than the voltage of the second power supply V2, and the working state of the first PIN diode D1 and the second PIN diode D2 is the off state, and the first impedance transformation line Z1 is not short-circuited, which does not affect the normal path of the RF signal in the first impedance transformation line Z1, so the RF signal is normally turned on.
  • the RF signal output by the power amplifier enters the RF switch from RFin.
  • the average power output of the power amplifier is at least 80W (the peak power is about 800W)
  • connecting a PIN diode in series on the RF signal path will cause the PIN diode temperature to be too high and the link insertion loss to be too large.
  • the power capacity of the RF switch can be increased.
  • the impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the RF switch.
  • the first power supply V1 can use VCC3V3
  • the second power supply V2 can use VCC48V, but there is no specific numerical limitation on the voltages of the first power supply V1 and the second power supply V2, and it is only required that the voltage of the second power supply V2 is higher than the voltage of the first power supply V1.
  • the present application solves the problem of RF switch power capacity under the premise of using PIN diodes to ensure high isolation, high linearity and low insertion loss.
  • the design structure of the present application is used to achieve a high isolation, high linearity, low loss, high-power RF switch with an average power of more than 80W (peak power of 800W), a switching time of 1 to 2us, an insertion loss of less than 0.2dB, an isolation of more than 35dB, and an IIP3 of more than 80dBm.
  • the present application can be applied to sub-band full-duplex models to achieve fast switching of different sub-band filters between TDD time slots, and solve the power capacity and isolation problems of high-power RF switches used in TDD power amplifiers. Therefore, the present application can significantly improve the power capacity and isolation of high-power RF switches, so that the average power of the switch reaches more than 80W (peak power of 800W), the isolation is 35dBc, and can continue to increase according to demand.
  • a cascaded multi-stage 1/4 wavelength + power supply network can also be used to achieve higher isolation, wherein the power supply network includes a first power supply and a second power supply.
  • the present application can be applied to different frequency bands, such as 1.8G, 2.6G, 3.5G, 4.9G, etc. It only needs to correspond the 1/4 wavelength impedance change to the frequency of the corresponding radio frequency signal, and appropriately adjust the power supply network 1/2/3.
  • the RF signal input terminal RFin may be connected to the first power source V1 through a second impedance transformation line Z2.
  • the input terminal RFin is connected to the first power source V1 through the second impedance transformation line Z2
  • the second impedance transformation line Z2 is short-circuited to form an impedance transformation from short circuit to open circuit, and therefore, the RF signal between the second impedance transformation line Z2 is cut off, thereby further improving the isolation of the RF switch.
  • the RF signal input terminal RFin can also be connected to the first power source V1 through an RF inductor.
  • RF isolation between the first power source V1 and the RF signal input terminal RFin can also be achieved.
  • the first PIN diode D1 and the second PIN diode D2 are connected to the switch K through the first inductor L1 and/or the second inductor L2, wherein the first inductor L1 can be set to achieve RF isolation between the second power source V2 and the RF signal input terminal RFin, and the second inductor L2 can be set to achieve RF isolation between the second power source V2 and the RF signal output terminal RFout, and the switch K is set to switch the connection V2 between the ground terminal GND and the second power source V2.
  • the two ends of the first inductor L1 are respectively connected to the ground C3 through the second RF microwave capacitor C2 and the third RF microwave capacitor, and the two ends of the second inductor L2 are respectively connected to the ground through the fourth RF microwave capacitor C4 and the fifth RF microwave capacitor C5.
  • the switch K is switched to the ground terminal GND, the first PIN diode D1 at point A and the second PIN diode D2 at point B are turned on, and pass through the RF microwave capacitors C2, C3, C4, and C5 to the ground, forming a short-circuit point of the RF signal.
  • the short-circuit point at point B will form an open circuit at point A after passing through the first impedance transformation line Z1, and the RF signal is fully reflected at point A, forming a RF signal shutdown.
  • the switch K is switched to the second power supply V2
  • the first PIN diode D1 at point A and the second PIN diode at point B are cut off, and both points A and B are impedance open circuit points, which does not affect the normal RF path, and the RF signal is normally conducted.
  • the RF microwave capacitors C2, C3, C4, and C5 all play the role of RF isolation.
  • the RF signal input terminal RFin is connected to the first impedance transformation line Z1 through the sixth RF microwave capacitor C6, and the first impedance transformation line Z1 is connected to the RF signal output terminal RFout through the seventh RF microwave capacitor C7.
  • the sixth RF microwave capacitor C6 and the seventh RF microwave capacitor C7 both play a role in RF isolation.
  • the RF switch designed in this application can meet the power capacity of more than 80W of average power, the isolation is more than 35dB, and the insertion loss is controlled within 0.2dB.
  • the isolation can be further improved by adding PIN diodes and impedance transformation lines, and its effect is far better than the existing RF switch devices.
  • the RF switch of this application is simple in design, only the commonly used PIN diodes need to be selected, which has the advantage of low cost.
  • An embodiment of the present application further provides an electronic device, which includes the above-mentioned radio frequency switch.
  • the electronic device since the electronic device adopts the above-mentioned RF switch, the electronic device can also solve the problems of limited power capacity and insufficient isolation of the RF switch currently used in TDD power amplifiers.
  • the RF switch of the electronic device includes an RF signal input terminal and an RF signal output terminal.
  • the RF signal input terminal is connected to a first power supply through an RF isolation device.
  • At least one section of a first impedance transformation line is connected between the RF signal output terminal and the RF signal input terminal.
  • the first impedance transformation line is configured to achieve impedance transformation from short circuit to open circuit.
  • the two ends of the first impedance transformation line are respectively switchably connected to the ground terminal or the second power supply through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than the voltage of the first power supply.
  • the power capacity is increased by connecting a PIN diode in parallel with the impedance transformation line, and an impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the RF switch. Based on this, the present application can This significantly improves the power capacity and isolation of RF switches.
  • the embodiment of the present application further provides a control method for a radio frequency switch, wherein the radio frequency switch comprises a radio frequency signal input terminal and a radio frequency signal output terminal, wherein the radio frequency signal input terminal is connected to a first power supply through a radio frequency isolation device, and at least one first impedance transformation line is connected between the radio frequency signal output terminal and the radio frequency signal input terminal, wherein the first impedance transformation line is configured to achieve impedance transformation from a short circuit to an open circuit, and wherein two ends of the first impedance transformation line are switchably connected to a ground terminal or a second power supply through a first PIN diode and a second PIN diode, respectively, wherein a voltage of the second power supply is higher than a voltage of the first power supply;
  • the control method includes but is not limited to the following steps:
  • Step S100 Switch the two ends of the first impedance transformation line to be connected to the ground terminal through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is cut off; or switch the two ends of the first impedance transformation line to be connected to the second power supply through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is turned on.
  • the voltage of the first power supply V1 is higher than the ground terminal GND, and the working state of the first PIN diode D1 and the second PIN diode D2 is the on state.
  • the first impedance transformation line Z1 forms an impedance transformation from short circuit to open circuit due to being short-circuited, so the RF signal between the first impedance transformation line Z1 is cut off; when two ends A and B of the first impedance transformation line Z1 are connected to the second power supply through the first PIN diode D1 and the second PIN diode D2 respectively, the voltage of the first power supply V1 is lower than the voltage of the second power supply V2, and the working state of the first PIN diode D1 and the second PIN diode D2 is the off state, the first impedance transformation line Z1 is not short-circuited, and the normal path of the RF signal in the first impedance transformation line Z1 is not affected, so the RF signal is normally conducted.
  • the switch K can be used to switch the connection V2 between the ground terminal GND and the second power supply V2.
  • the two ends of the first inductor L1 are respectively connected to the ground C3 through the second RF microwave capacitor C2 and the third RF microwave capacitor, and the two ends of the second inductor L2 are respectively connected to the ground through the fourth RF microwave capacitor C4 and the fifth RF microwave capacitor C5.
  • the switch K When the switch K is switched to the ground terminal GND, the first PIN diode D1 at point A and the second PIN diode D2 at point B are turned on, and pass through the RF microwave capacitors C2, C3, C4, and C5 to the ground, forming a short-circuit point of the RF signal.
  • the short-circuit point at point B will pass through the first impedance transformation line Z1 to form an open circuit at point A, and the RF signal is fully reflected at point A, forming a RF signal shutdown.
  • the switch K When the switch K is switched to the second power supply V2, the first PIN diode D1 at point A and the second PIN diode at point B are cut off. For both points A and B, they are impedance open circuit points, which do not affect the normal RF path, forming a normal conduction of the RF signal.
  • FIG4 is a schematic diagram showing the connection of a sub-band full-duplex TDD power amplifier RF switch circuit, and the sub-band full-duplex TDD power amplifier RF switch circuit applies the RF switch of the present application.
  • the working mechanism is as follows:
  • the Band 1 filter When the sub-band Band 0 filter is turned on, the Band 1 filter is turned off. At this time, the power supply VCC3V3 of the Band 1 filter is long-term supply, as shown in Figure 1, the cathode power supply of the first PIN diode D1 and the second PIN diode D2 is cut to GND, the first PIN diode D1 at point A and the second PIN diode D2 at point B are turned on, and pass through the RF microwave capacitors C2, C3, C4, and C5 to the ground, forming an RF short-circuit point. The short-circuit point at point B will pass through the 1/4 wavelength conversion line and form an open circuit at point A. The RF signal is fully reflected at point A, enters the 3-port of the circulator, and is absorbed by the load, forming the RF signal shutdown.
  • the Band 0 filter When the sub-band Band 1 filter is turned on, the Band 0 filter is turned off. At this time, the power supply VCC3V3 of the Band 0 filter is long-term supply, as shown in Figure 1, the cathode power supply of the first PIN diode D1 and the second PIN diode D2 is cut to VCC48V, the first PIN diode D1 at point A and the second PIN diode D2 at point B are cut off, and both points A and B are impedance open points. It does not affect the normal RF path, ensuring normal conduction of RF signals.
  • the RF switch designed in this application can meet the power capacity of more than 80W of average power, the isolation is more than 35dB, and the insertion loss is controlled within 0.2dB.
  • the isolation can be further improved by adding PIN diodes and impedance transformation lines, and its effect is far better than the existing RF switch devices.
  • the RF switch of this application is simple in design, only the commonly used PIN diodes need to be selected, which has the advantage of low cost.
  • an embodiment of the present application further provides a control device.
  • control device includes: one or more processors and memory, and one processor and memory are used as an example in Fig. 5.
  • the processor and memory may be connected via a bus or other methods, and the bus connection is used as an example in Fig. 5.
  • the memory as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer executable programs, such as the control method in the above-mentioned embodiment of the present application.
  • the processor implements the control method in the above-mentioned embodiment of the present application by running the non-transitory software programs and programs stored in the memory.
  • the memory may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data required for executing the control method in the above-mentioned embodiment of the present application, etc.
  • the memory may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device.
  • the memory may include a memory remotely arranged relative to the processor, and these remote memories may be connected to the terminal via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.
  • the non-transient software program and program required to implement the control method in the above-mentioned embodiment of the present application are stored in the memory.
  • the control method in the above-mentioned embodiment of the present application is executed, for example, the method step S100 described above is executed, and the two ends of the first impedance transformation line are switched to be connected to the ground terminal through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is turned off; or, the two ends of the first impedance transformation line are switched to be connected to the second power supply through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is turned on.
  • the power capacity is increased by connecting the PIN diode in parallel with the impedance transformation line, and the impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the RF switch. Based on this, the present application can significantly improve the power capacity and isolation of the RF switch.
  • the embodiment of the present application further provides a computer-readable storage medium, which stores a computer executable program, and the computer executable program is executed by one or more control processors, so that the one or more processors can execute the control method in the embodiment of the present application, for example, executing the method step S100 described above, switching the two ends of the first impedance transformation line to be connected to the ground terminal through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is turned off; or, switching the two ends of the first impedance transformation line to be connected to the second power supply through the first PIN diode and the second PIN diode respectively, so that the RF signal between the first impedance transformation line is turned on.
  • the power capacity is increased by connecting the PIN diode in parallel with the impedance transformation line, and the impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the RF switch. Based on this, the present application can significantly improve the power capacity and isolation of the RF switch.
  • the embodiment of the present application includes: a radio frequency switch method is applied to a radio frequency switch, the radio frequency switch includes a radio frequency signal input terminal and a radio frequency signal output terminal, the radio frequency signal input terminal is connected to a first power supply through a radio frequency isolation device, at least one first impedance transformation line is connected between the radio frequency signal output terminal and the radio frequency signal input terminal, the first impedance transformation line is configured to achieve impedance transformation from short circuit to open circuit, and both ends of the first impedance transformation line are switchably connected through a first PIN diode and a second PIN diode. Connected to the ground terminal or the second power supply, wherein the voltage of the second power supply is higher than the voltage of the first power supply.
  • the power capacity is increased by connecting a PIN diode in parallel with an impedance transformation line, and an impedance transformation from a short circuit to an open circuit is formed by the on-off of the PIN diode and the impedance transformation line, thereby improving the isolation of the RF switch.
  • the problem of limited power capacity and insufficient isolation of the RF switch currently used in TDD power amplifiers can be solved.
  • the present application can significantly improve the power capacity and isolation of the RF switch, and can further improve the power tolerance and isolation by connecting multiple PIN diodes in parallel and adding impedance transformation lines as required.
  • computer storage medium includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as a computer-readable program, a data structure, a program module or other data).
  • Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital versatile disk (DVD) or other optical disk storage, magnetic cassette, magnetic tape, disk storage or other magnetic storage device, or any other medium that can be used to store desired information and can be accessed by a computer.
  • communication media generally contain computer-readable programs, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transport mechanism, and may include any information delivery media.

Landscapes

  • Electronic Switches (AREA)

Abstract

射频开关及其控制方法、电子设备，射频开关包括射频信号输入端和射频信号输出端，射频信号输入端通过射频隔离器件连接第一电源，射频信号输出端与射频信号输入端之间连接有至少一段第一阻抗变换线，第一阻抗变换线被设置为实现从短路到开路的阻抗变换，在第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换连接到接地端或者第二电源，第二电源的电压高于第一电源的电压。

Description

射频开关及其控制方法、电子设备
相关申请的交叉引用
本申请基于申请号为202211258904.5、申请日为2022年10月14日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本申请实施例涉及通信技术领域，特别是涉及一种射频开关及其控制方法、电子设备。
背景技术
目前，市场上使用的射频开关主要分为两种：一种机械开关、一种电子开关。机械开关的切换时间基本在百毫秒级，很难满足RRU(Remote Radio Unit，射频拉远单元)设备TDD(Time Division Duplexing，时分双工)时隙微秒级的切换。电子开关的切换时间基本在1～2微秒级，但受限于PIN管结温(175℃)，功率容量很难做到很高，业界基本能达到的功率等级为40～60W，采用常规的技术手段很难再有突破，因此，TDD功放使用的射频开关存在功率容量受限以及隔离度不够的问题。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本申请实施例提供了一种射频开关、电子设备、射频开关的控制方法、控制装置以及计算机可读存储介质。
第一方面，本申请实施例提供了一种射频开关，包括：射频信号输入端，所述射频信号输入端通过射频隔离器件连接第一电源；射频信号输出端，所述射频信号输出端与所述射频信号输入端之间连接有至少一段第一阻抗变换线；至少一段所述第一阻抗变换线，所述第一阻抗变换线被设置为实现从短路到开路的阻抗变换，所述第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换地连接到接地端或者第二电源，其中，所述第二电源的电压高于所述第一电源的电压。
第二方面，本申请实施例提供了一种电子设备，包括有如上第一方面所述的射频开关。
第三方面，本申请实施例提供了一种射频开关的控制方法，所述射频开关包括射频信号输入端和射频信号输出端，所述射频信号输入端通过射频隔离连接第一电源，所述射频信号输出端与所述射频信号输入端之间连接有至少一段第一阻抗变换线，所述第一阻抗变换线被设置为实现从短路到开路的阻抗变换，所述第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换地连接到接地端或者第二电源，其中，所述第二电源的电压高于所述第一电源的电压；所述控制方法包括：切换所述第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到接地端，以使所述第一阻抗变换线之间的射频信号关断；或者，切换所述第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到第二电源，以使所述第一阻抗变换线之间的射频信号导通。
第四方面，本申请实施例提供了一种控制装置，包括：存储器、处理器及存储在存储器上并可在处理器上运行的计算机程序，所述处理器执行所述计算机程序时实现如上第三方面所述的控制方法。
第五方面，本申请实施例提供了一种计算机可读存储介质，所述计算机可读存储介质存储有计算机可执行程序，所述计算机可执行程序用于使计算机执行如上第三方面所述的控制方法。
本申请的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本申请而了解。本申请的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请技术方案的进一步理解，并且构成说明书的一部分，与本申请的实施例一起用于解释本申请的技术方案，并不构成对本申请技术方案的限制。
图1A是本申请一个实施例提供的一种射频开关的结构示意图；
图1B是本申请一个实施例提供的另一种射频开关的结构示意图；
图2为本申请一个实施例提供的1/4*n波长射频开关的结构示意图；
图3为本申请一个实施例提供的高隔离多级射频开关的结构示意图；
图4为本申请一个实施例提供的TDD功放射频开关电路连接示意图；
图5是本申请一个实施例提供的控制装置结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的实施例仅用以解释本申请，并不用于限定本申请。
应了解，在本申请实施例的描述中，多个(或多项)的含义是两个以上，大于、小于、超过等理解为不包括本数，以上、以下、以内等理解为包括本数。如果有描述到“第一”、“第二”等只是用于区分技术特征为目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或者隐含指明所指示的技术特征的先后关系。
针对目前TDD功放使用的射频开关存在功率容量受限以及隔离度不够的问题，本申请实施例提供了一种射频开关及其控制方法、电子设备,其中，射频开关方法应用于射频开关，射频开关包括射频信号输入端和射频信号输出端，射频信号输入端通过射频隔离器件连接第一电源，射频信号输出端与射频信号输入端之间连接有至少一段第一阻抗变换线，第一阻抗变换线被设置为实现从短路到开路的阻抗变换，在第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换连接到接地端或者第二电源，其中，第二电源的电压高于第一电源的电压。通过PIN二极管与阻抗变换线并联以提升功率容量，并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。基于此，能够解决目前TDD功放使用的射频开关存在功率容量受限以及隔离度不够的问题。相对于现有的射频开关，本申请可以显著提升射频开关的功率容量和隔离度，并能够根据需求采用多个PIN二极管并联和增加阻抗变换线来进一步提升耐功率容限和隔离度。
如图1A所示，图1A是本申请一个实施例提供的一种射频开关的结构示意图。射频开关包括包络射频信号输入端RFin和射频信号输出端RFout，射频信号输入端RFin通过射频隔离器件连接第一电源V1，其中，射频隔离器件可以包括但不限于阻抗变换线、射频电感。射频信号输出端RFout与射频信号输入端RFin之间连接有至少一段第一阻抗变换线Z1，第一阻抗变换线Z1被设置为实现从短路到开路的阻抗变换，在第一阻抗变换线Z1的两端A、B分别通过第一PIN二极管D1和第二PIN二极管D2可切换连接到接地端GND或者第二电源V2，其中，第二电源V2的电压高于第一电源V1的电压。在第一阻抗变换线Z1的两端A、B分别通过第一PIN二极管D1和第二PIN二极管D2连接到接地端的情况下，第一电源V1的电压高于接地端GND，第一PIN二极管D1和第二PIN二极管D2的工作状态为导通状态，此时，第一阻抗变换线Z1由于被短路而形成从短路到开路的阻抗变换，因此，第一阻抗变换线Z1之间的射频信号关断；在第一阻抗变换线Z1的两端A、B分别通过第一PIN二极管D1和第二PIN二极管D2连接到第二电源的情况下，第一电源V1的电压低于第二电源V2的电压，第一PIN二极管D1和第二PIN二极管D2的工作状态为截止状态，第一阻抗变换线Z1没有被短路，不影响射频信号在第一阻抗变换线Z1的正常通路，因此，射频信号正常导通。需要说明的是，功放输出的射频信号从RFin进入射频开关，考虑到功放输出的平均功率至少80W以上(峰值功率为800W左右)，在射频信号通路上串联PIN二极管会导致PIN二极管温度过高，链路插损偏大。本申请由于RFin和RFout通路上无串联PIN二极管，而通过PIN二极管与阻抗变换线并联以提升功率容量，因此，可以提高射频开关的功率容量。并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。需要说明的是，在本申请实施例中，第一电源V1可以采用VCC3V3，第二电源V2可以采用VCC48V，但对于第一电源V1和第二电源V2的电压不作具体数值限定，仅要求第二电源V2的电压高于第一电源V1的电压。
基于此，本申请在使用PIN二极管保证高隔离、高线性和低插损的前提下，解决射频开关功率容量问题。为了射频开关达到系统输出功率等级，通过本申请的设计结构实现耐平均功率80W(峰值功率800W)以上，切换时间1～2us、插损小于0.2dB、隔离度大于35dB、IIP3大于80dBm的高隔离、高线性、低损耗、大功率射频开关。本申请可以应用于子带全双工机型，实现TDD时隙间不同子带滤波器的快速切换，解决TDD功放使用的大功率射频开关的功率容量受限、隔离度问题。因此，本申请可以显著提升大功率射频开关的功率容量和隔离度，使开关的平均功率达到80W(峰值功率800W)以上，隔离度35dBc，并能够根据需求继续提升。
在一实施例中，如图2所示，第一阻抗变换线Z1可以采用1/4波长阻抗变换线，也可以采用1/4波长整数倍的阻抗变换线，即1/4*n波长(n＝1,2,3…)，以实现大功率、高隔离指标，其中，波长为射频信号的波长，波长可以由光速除以射频信号的频率来确定。需要说明的是，如图3所示，还可以采用级联多级的1/4波长+供电网络来实现更高的隔离度，其中，供电网络包括第一电源和第二电源。需要说明的是，本申请可应用于不同频段，如1.8G、2.6G、3.5G、4.9G等，只需要将1/4波长阻抗变化对应到相应的射频信号的频率，并对供电网络1/2/3进行适当调整即可。
在一实施例中，如图1B所示，对于射频信号输入端RFin通过射频隔离连接第一电源V1的方式，射频信号输入端RFin可以通过第二阻抗变换线Z2连接第一电源V1。在射频信号输 入端RFin通过第二阻抗变换线Z2连接第一电源V1的情形下，由于第一电源V1通过第一电阻R和第一射频微波电容C1接地，第二阻抗变换线Z2被短路而形成从短路到开路的阻抗变换，因此，第二阻抗变换线Z2之间的射频信号关断，从而可以进一步提升射频开关的隔离度。需要说明的是，射频信号输入端RFin还可以通过射频电感连接第一电源V1，在射频信号输入端RFin通过射频电感连接第一电源V1的情形下，同样可以实现第一电源V1与射频信号输入端RFin之间的射频隔离。
在一实施例中，第一阻抗变换线Z1和第二阻抗变换线Z2为波长阻抗变换线，其中，波长阻抗变换线的波长为从射频信号输入端输入的射频信号的四分之一波长的整数倍，即1/4*n波长(n＝1,2,3…)。需要指出的是，当波长阻抗变换线的波长为从射频信号输入端输入的射频信号的四分之一波长的奇数倍，即1/4*n波长(n＝1,3,5…)，对于提升射频开关的隔离度效果更佳。
在一实施例中，如图1B所示，第一PIN二极管D1和第二PIN二极管D2之间通过第一电感L1和/或第二电感L2连接到切换开关K，其中，第一电感L1可以被设置为实现第二电源V2与射频信号输入端RFin之间的射频隔离，第二电感L2可以被设置为实现第二电源V2与射频信号输出端RFout之间的射频隔离，切换开关K被设置为在接地端GND和第二电源V2之间切换连接V2。第一电感L1两端分别通过第二射频微波电容C2和第三射频微波电容接地C3，第二电感L2两端分别通过第四射频微波电容C4和第五射频微波电容C5接地。当切换开关K切到接地端GND，A点的第一PIN二极管D1和B点的第二PIN二极管D2导通，并经过射频微波电容C2、C3、C4、C5到地，形成射频信号短路点，B点的短路点会经过第一阻抗变换线Z1之后在A点形成开路，射频信号在A点全反射，形成射频信号关断。当切换开关K切到第二电源V2，A点的第一PIN二极管D1和B点的第二PIN二极管截止，对于A点和B点均为阻抗开路点，不影响射频正常通路，形成射频信号正常导通。其中，射频微波电容C2、C3、C4、C5均起到射频隔离的作用。
在一实施例中，如图1B所示，射频信号输入端RFin通过第六射频微波电容C6与第一阻抗变换线Z1连接，第一阻抗变换线Z1通过第七射频微波电容C7与射频信号输出端RFout连接。其中，第六射频微波电容C6和第七射频微波电容C7均起到射频隔离的作用。
需要说明的是，本申请设计的射频开关可以满足均值功率80W以上的功率容量，隔离度在满足35dB以上、插损控制在0.2dB以内。同时可以根据实际需要，通过增加PIN二极管和阻抗变换线可以进一步提升隔离度，其效果远优于现有的射频开关器件。且本申请的射频开关设计简单，只需要选用常用的PIN二极管，具有低成本的优势。
本申请实施例还提供了一种电子设备，该电子设备包括有上述的射频开关。
在一实施例中，由于电子设备采用了上述的射频开关，因此，本电子设备同样能够解决目前TDD功放使用的射频开关存在功率容量受限以及隔离度不够的问题。本电子设备的射频开关包括射频信号输入端和射频信号输出端，射频信号输入端通过射频隔离器件连接第一电源，射频信号输出端与射频信号输入端之间连接有至少一段第一阻抗变换线，第一阻抗变换线被设置为实现从短路到开路的阻抗变换，在第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换连接到接地端或者第二电源，其中，第二电源的电压高于第一电源的电压。通过PIN二极管与阻抗变换线并联以提升功率容量，并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。基于此，本申请可 以显著提升射频开关的功率容量和隔离度。
本申请实施例还提供了一种射频开关的控制方法，射频开关包括射频信号输入端和射频信号输出端，射频信号输入端通过射频隔离器件连接第一电源，射频信号输出端与射频信号输入端之间连接有至少一段第一阻抗变换线，第一阻抗变换线被设置为实现从短路到开路的阻抗变换，在第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换连接到接地端或者第二电源，其中，第二电源的电压高于第一电源的电压；
该控制方法包括但不限于如下步骤：
步骤S100：切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到接地端，以使第一阻抗变换线之间的射频信号关断；或者，切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到第二电源，以使第一阻抗变换线之间的射频信号导通。
在一实施例中，如图1A所示，在第一阻抗变换线Z1的两端A、B分别通过第一PIN二极管D1和第二PIN二极管D2连接到接地端的情况下，第一电源V1的电压高于接地端GND，第一PIN二极管D1和第二PIN二极管D2的工作状态为导通状态，此时，第一阻抗变换线Z1由于被短路而形成从短路到开路的阻抗变换，因此，第一阻抗变换线Z1之间的射频信号关断；在第一阻抗变换线Z1的两端A、B分别通过第一PIN二极管D1和第二PIN二极管D2连接到第二电源的情况下，第一电源V1的电压低于第二电源V2的电压，第一PIN二极管D1和第二PIN二极管D2的工作状态为截止状态，第一阻抗变换线Z1没有被短路，不影响射频信号在第一阻抗变换线Z1的正常通路，因此，射频信号正常导通。
在一实施例中，如图1B所示，可以通过切换开关K来实现在接地端GND和第二电源V2之间切换连接V2。如图1所示，第一电感L1两端分别通过第二射频微波电容C2和第三射频微波电容接地C3，第二电感L2两端分别通过第四射频微波电容C4和第五射频微波电容C5接地。当切换开关K切到接地端GND，A点的第一PIN二极管D1和B点的第二PIN二极管D2导通，并经过射频微波电容C2、C3、C4、C5到地，形成射频信号短路点，B点的短路点会经过第一阻抗变换线Z1之后在A点形成开路，射频信号在A点全反射，形成射频信号关断。当切换开关K切到第二电源V2，A点的第一PIN二极管D1和B点的第二PIN二极管截止，对于A点和B点均为阻抗开路点，不影响射频正常通路，形成射频信号正常导通。
以下结合附图和实施例进一步介绍本申请提供的射频开关。
图4为子带全双工TDD功放射频开关电路连接示意图，该子带全双工TDD功放射频开关电路应用本申请的射频开关。
以子带全双工TDD功放下行工作时为例，工作机理如下：
当子带Band 0滤波器导通时，Band 1滤波器关断。此时Band 1滤波器的供电VCC3V3为长供，如图1所示，第一PIN二极管D1和第二PIN二极管D2的阴极供电切到GND，A点的第一PIN二极管D1和B点的第二PIN二极管D2导通，并经过射频微波电容C2、C3、C4、C5到地，形成射频短路点，B点短路点会经过1/4波长变换线之后在A点形成开路，射频信号在A点全反射，进去环形器的3端口，被负载吸收，形成射频信号关断。
当子带Band 1滤波器导通时，Band 0滤波器关断。此时Band 0滤波器的供电VCC3V3为长供，如图1所示，第一PIN二极管D1和第二PIN二极管D2的阴极供电切到VCC48V，A点的第一PIN二极管D1和B点的第二PIN二极管D2截止，对于A点和B点均为阻抗开路点， 不影响射频正常通路，形成射频信号正常导通。
基于此，本申请设计的射频开关可以满足均值功率80W以上的功率容量，隔离度在满足35dB以上、插损控制在0.2dB以内。同时可以根据实际需要，通过增加PIN二极管和阻抗变换线可以进一步提升隔离度，其效果远优于现有的射频开关器件。且本申请的射频开关设计简单，只需要选用常用的PIN二极管，具有低成本的优势。
如图5所示，本申请实施例还提供了一种控制装置。
在一些实施例中，该控制装置包括：一个或多个处理器和存储器，图5中以一个处理器及存储器为例。处理器和存储器可以通过总线或者其他方式连接，图5中以通过总线连接为例。
存储器作为一种非暂态计算机可读存储介质，可用于存储非暂态软件程序以及非暂态性计算机可执行程序，如上述本申请实施例中的控制方法。处理器通过运行存储在存储器中的非暂态软件程序以及程序，从而实现上述本申请实施例中的控制方法。
存储器可以包括存储程序区和存储数据区，其中，存储程序区可存储操作系统、至少一个功能所需要的应用程序；存储数据区可存储执行上述本申请实施例中的控制方法所需的数据等。此外，存储器可以包括高速随机存取存储器，还可以包括非暂态存储器，例如至少一个磁盘存储器件、闪存器件、或其他非暂态固态存储器件。在一些实施方式中，存储器可包括相对于处理器远程设置的存储器，这些远程存储器可以通过网络连接至该终端。上述网络的实例包括但不限于互联网、企业内部网、局域网、移动通信网及其组合。
实现上述本申请实施例中的控制方法所需的非暂态软件程序以及程序存储在存储器中，当被一个或者多个处理器执行时，执行上述本申请实施例中的控制方法，例如，执行以上描述的方法步骤S100，切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到接地端，以使第一阻抗变换线之间的射频信号关断；或者，切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到第二电源，以使第一阻抗变换线之间的射频信号导通。通过PIN二极管与阻抗变换线并联以提升功率容量，并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。基于此，本申请可以显著提升射频开关的功率容量和隔离度。
此外，本申请实施例还提供了一种计算机可读存储介质，该计算机可读存储介质存储有计算机可执行程序，该计算机可执行程序被一个或多个控制处理器执行，可使得上述一个或多个处理器执行上述本申请实施例中的控制方法，例如，执行以上描述的方法步骤S100，切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到接地端，以使第一阻抗变换线之间的射频信号关断；或者，切换第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管连接到第二电源，以使第一阻抗变换线之间的射频信号导通。通过PIN二极管与阻抗变换线并联以提升功率容量，并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。基于此，本申请可以显著提升射频开关的功率容量和隔离度。
本申请实施例包括：射频开关方法应用于射频开关，射频开关包括射频信号输入端和射频信号输出端，射频信号输入端通过射频隔离器件连接第一电源，射频信号输出端与射频信号输入端之间连接有至少一段第一阻抗变换线，第一阻抗变换线被设置为实现从短路到开路的阻抗变换，第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换地连 接到接地端或者第二电源，其中，第二电源的电压高于第一电源的电压。通过PIN二极管与阻抗变换线并联以提升功率容量，并且通过PIN二极管的通断和阻抗变换线形成短路到开路的阻抗转变，从而提升射频开关的隔离度。基于此，能够解决目前TDD功放使用的射频开关存在功率容量受限以及隔离度不够的问题。相对于现有的射频开关，本申请可以显著提升射频开关的功率容量和隔离度，并能够根据需求采用多个PIN二极管并联和增加阻抗变换线来进一步提升耐功率容限和隔离度。
本领域普通技术人员可以理解，上文中所公开方法中的全部或某些步骤、系统可以被实施为软件、固件、硬件及其适当的组合。某些物理组件或所有物理组件可以被实施为由处理器，如中央处理器、数字信号处理器或微处理器执行的软件，或者被实施为硬件，或者被实施为集成电路，如专用集成电路。这样的软件可以分布在计算机可读介质上，计算机可读介质可以包括计算机存储介质(或非暂时性介质)和通信介质(或暂时性介质)。如本领域普通技术人员公知的，术语计算机存储介质包括在用于存储信息(诸如计算机可读程序、数据结构、程序模块或其他数据)的任何方法或技术中实施的易失性和非易失性、可移除和不可移除介质。计算机存储介质包括但不限于RAM、ROM、EEPROM、闪存或其他存储器技术、CD-ROM、数字多功能盘(DVD)或其他光盘存储、磁盒、磁带、磁盘存储或其他磁存储装置、或者可以用于存储期望的信息并且可以被计算机访问的任何其他的介质。此外，本领域普通技术人员公知的是，通信介质通常包含计算机可读程序、数据结构、程序模块或者诸如载波或其他传输机制之类的调制数据信号中的其他数据，并且可包括任何信息递送介质。
以上是对本申请的一些实施进行了说明，但本申请并不局限于上述实施方式，熟悉本领域的技术人员在不违背本申请的共享条件下还可作出种种等同的变形或替换，这些等同的变形或替换均包括在本申请权利要求所限定的范围内。

Claims (10)

  1. 一种射频开关，包括：
    射频信号输入端，所述射频信号输入端通过射频隔离器件连接第一电源；
    射频信号输出端，所述射频信号输出端与所述射频信号输入端之间连接有至少一段第一阻抗变换线；
    至少一段所述第一阻抗变换线，所述第一阻抗变换线被设置为实现从短路到开路的阻抗变换，所述第一阻抗变换线的两端分别通过第一PIN二极管和第二PIN二极管可切换地连接到接地端或者第二电源，其中，所述第二电源的电压高于所述第一电源的电压。
  2. 根据权利要求1所述的射频开关，其中，所述射频信号输入端通过第二阻抗变换线或者射频电感连接第一电源，所述第一电源通过第一电阻和第一射频微波电容接地，其中，所述第二阻抗变换线被设置为实现从短路到开路的阻抗变换。
  3. 根据权利要求2所述的射频开关，其中，所述第一阻抗变换线和所述第二阻抗变换线为波长阻抗变换线，其中，所述波长阻抗变换线的波长为从所述射频信号输入端输入的射频信号的四分之一波长的整数倍。
  4. 根据权利要求3所述的射频开关，其中，所述波长阻抗变换线的波长为从所述射频信号输入端输入的射频信号的四分之一波长的奇数倍。
  5. 根据权利要求1所述的射频开关，其中，所述第一PIN二极管通过第一电感连接到切换开关，和/或所述第二PIN二极管通过第二电感连接到所述切换开关，所述切换开关被设置为在所述接地端和所述第二电源之间切换连接。
  6. 根据权利要求5所述的射频开关，其中，所述第一电感两端分别通过第二射频微波电容和第三射频微波电容接地。
  7. 根据权利要求1或6所述的射频开关，其中，所述第二电感两端分别通过第四射频微波电容和第五射频微波电容接地。
  8. 根据权利要求1所述的射频开关，其中，所述射频信号输入端通过第六射频微波电容与所述第一阻抗变换线连接。
  9. 根据权利要求1或8所述的射频开关，其中，所述第一阻抗变换线通过第七射频微波电容与所述射频信号输出端连接。
  10. 一种电子设备，包括有如权利要求1至9任意一项所述的射频开关。
PCT/CN2023/119145 2022-10-14 2023-09-15 射频开关及其控制方法、电子设备 WO2024078260A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211258904.5 2022-10-14
CN202211258904.5A CN117938136A (zh) 2022-10-14 2022-10-14 射频开关及其控制方法、电子设备

Publications (1)

Publication Number Publication Date
WO2024078260A1 true WO2024078260A1 (zh) 2024-04-18

Family

ID=90668756

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/119145 WO2024078260A1 (zh) 2022-10-14 2023-09-15 射频开关及其控制方法、电子设备

Country Status (2)

Country Link
CN (1) CN117938136A (zh)
WO (1) WO2024078260A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201122649Y (zh) * 2007-05-24 2008-09-24 深圳国人通信有限公司 射频切换开关
CN103199829A (zh) * 2013-02-28 2013-07-10 广东宽普科技股份有限公司 一种提升射频开关功率能力的方法及其装置
US20180013417A1 (en) * 2016-07-08 2018-01-11 Analog Devices, Inc. Electronic switch exhibiting low off-state leakage current
CN109193079A (zh) * 2018-11-19 2019-01-11 重庆西南集成电路设计有限责任公司 阻抗变换单刀双掷微波开关
CN112202409A (zh) * 2020-09-21 2021-01-08 普联国际有限公司 低噪声放大模块、接收机和信号处理方法
CN113872584A (zh) * 2020-06-30 2021-12-31 中兴通讯股份有限公司 开关电路、电路板组件及电子设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201122649Y (zh) * 2007-05-24 2008-09-24 深圳国人通信有限公司 射频切换开关
CN103199829A (zh) * 2013-02-28 2013-07-10 广东宽普科技股份有限公司 一种提升射频开关功率能力的方法及其装置
US20180013417A1 (en) * 2016-07-08 2018-01-11 Analog Devices, Inc. Electronic switch exhibiting low off-state leakage current
CN109193079A (zh) * 2018-11-19 2019-01-11 重庆西南集成电路设计有限责任公司 阻抗变换单刀双掷微波开关
CN113872584A (zh) * 2020-06-30 2021-12-31 中兴通讯股份有限公司 开关电路、电路板组件及电子设备
CN112202409A (zh) * 2020-09-21 2021-01-08 普联国际有限公司 低噪声放大模块、接收机和信号处理方法

Also Published As

Publication number Publication date
CN117938136A (zh) 2024-04-26

Similar Documents

Publication Publication Date Title
EP3361633B1 (en) Doherty power amplifier circuit
KR19980014205A (ko) 고주파 전력분배기/결합기 회로
CN110784185A (zh) 功率放大器、输出匹配电路和射频模块
CN110808716A (zh) 一种Doherty射频功率放大器及其输出匹配网络结构
EP3192169B1 (en) Broadband doherty power amplifier
WO2024078260A1 (zh) 射频开关及其控制方法、电子设备
CN101814898B (zh) 一种射频放大器和数字预失真系统
CN216390917U (zh) Doherty射频功率放大器
CN113659300B (zh) 宽带四功分器
Tajima et al. GaAs monolithic wideband (2-18 GHz) variable attenuators
US10224878B2 (en) Power amplification device
CN103346373B (zh) 一种集总参数的宽带180度耦合器
WO2021197567A1 (en) Biasing a distributed amplifier
CN113098403A (zh) 基于GaAs pHEMT工艺的超宽带低电流驱动放大器
CN110350874B (zh) 一种具有谐波抑制能力的微带功率放大器
CN113872584A (zh) 开关电路、电路板组件及电子设备
CN109302149B (zh) 信号放大电路
CN115118242A (zh) 限幅器
EP4087124A1 (en) Power amplifier
CN221283159U (zh) 一种具备多端口适配网络的宽带功放合成器件
CN111628734A (zh) 一种新型s波段低成本高效率宽带连续波功放匹配电路
JP2004015411A (ja) 無接点切替機構付電力合成器
CN212572483U (zh) 一种特高频功率放大装置
CN100557958C (zh) 超高频低噪声放大器
EP4387090A1 (en) Power amplification circuit and power amplifier

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23876465

Country of ref document: EP

Kind code of ref document: A1